Hot blast stove

Abstract

The utility model provides a hot blast stove, and aims to solve the technical problems of resource waste and low production efficiency in the prior art. The hot-blast stove comprises a stove body, a plurality of single-temperature zones and a plurality of single-temperature zones, wherein the single-temperature zones are arranged in sequence; the multiple temperature control assemblies are all arranged on the furnace body, conveying assemblies are arranged in one-to-one correspondence with all the single temperature areas, and the temperature control assemblies are arranged at the bottom of the inner side of the furnace body and located on the lower portions of all the single temperature areas; the nitrogen gas charging assembly is arranged on the furnace body, and the gas supply end of the nitrogen gas charging assembly communicates with the interior of part of the single-temperature area; wherein all the single temperature areas form a temperature control area, and the conveying assembly penetrates into the furnace body from one end of the temperature control area and penetrates out of the furnace body from the other end of the temperature control area. The hot-blast stove is provided with a plurality of relatively independent spaces, and the process steps of the whole annealing process can be independently and sequentially carried out in different independent spaces, so that the hot-blast stove has the advantages of high production efficiency and reasonable resource utilization.

Description

Technical Field

[0001] This utility model relates to a silicon wafer manufacturing equipment, specifically a hot air furnace. Background Technology

[0002] Annealing is a crucial process in the manufacturing of silicon wafers. It reduces defects within the silicon wafer and results in better semiconductor chip quality.

[0003] In existing annealing processes, most equipment has limited space, requiring heating and cooling within the same space to complete the annealing process. Performing both heating and cooling within the same space increases heat consumption, primarily because each heating step requires raising the gas temperature within the space again, resulting in wasted heat. Furthermore, heating and cooling within the same space mean that the next set of silicon wafers can only be processed after the previous set has been completed, leading to low production efficiency. Utility Model Content

[0004] To address the technical problems of resource waste and low production efficiency in existing technologies, this utility model provides a hot blast stove with multiple relatively independent spaces. The entire annealing process can be carried out sequentially in different independent spaces, thus giving the hot blast stove the advantages of high production efficiency and rational resource utilization.

[0005] The technical solution of this utility model is:

[0006] A hot air furnace, comprising:

[0007] The furnace body has multiple sequentially arranged single-temperature zones inside;

[0008] Multiple temperature control components are all located on the furnace body and are configured to correspond one-to-one with each of the single temperature zones;

[0009] The conveying assembly is located at the bottom of the furnace body and at the bottom of all the single temperature zones;

[0010] The nitrogen filling component is located on the furnace body, and its gas supply end is connected to the interior of part of the single temperature zone;

[0011] All of the single temperature zones constitute a temperature control zone, and the conveying component enters the furnace body from one end of the temperature control zone and exits the furnace body from the other end of the temperature control zone.

[0012] Optionally, the single temperature zone has at least five zones, which are sequentially arranged along the conveying direction of the conveying assembly as a preheating zone, a heating zone, a high-temperature zone, a cooling zone, and a cooling zone.

[0013] Optionally, there are multiple high-temperature zones, which are arranged adjacent to each other.

[0014] Optionally, the supply end of the nitrogen filling component is connected to the interior of the heating zone, the high-temperature zone, and the cooling zone.

[0015] Optionally, the conveying assembly includes a plurality of transport units, with one transport unit located in each single temperature zone.

[0016] Optionally, the transport unit includes:

[0017] Multiple conveyor shafts are arranged parallel to each other inside the furnace body and are laid from one end of a single temperature zone to the other end, with their length direction perpendicular to the arrangement direction of all single temperature zones;

[0018] Multiple chains power all of the conveyor shafts, with one chain power-connected to the output shaft of a motor unit.

[0019] Optionally, a furnace door is provided between two adjacent single-temperature zones.

[0020] Optionally, the furnace body is provided with an n-shaped partition, which divides the furnace body into a first chamber and a second chamber, and the partition has a plurality of dampers connecting the first chamber and the second chamber;

[0021] The delivery assembly is located in the second chamber, and the supply end of the nitrogen filling assembly is connected to the first chamber.

[0022] All the dampers are located on both sides of the partition, and the dampers are openable, closable and adjustable.

[0023] Optionally, each of the single temperature zones is equipped with a fan at its top, and the fan blades are located in the first chamber of the furnace body.

[0024] Optionally, two fans are arranged side by side at the top of each of the single temperature zones, with the blades of the two fans rotating in opposite directions.

[0025] Compared with the prior art, the beneficial effects of this utility model are:

[0026] Multiple single-temperature zones are set up inside the furnace. The temperature in all single-temperature zones is regulated by a temperature control component. Then, a conveying component transports the silicon wafers from one end of the temperature-controlled zone to the other. During the conveying process, the silicon wafers are heated in the first few single-temperature zones and then cooled in the later single-temperature zones to complete the entire annealing process. This invention has advantages such as high production efficiency and rational resource utilization. Attached Figure Description

[0027] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0028] Figure 1 This is a front view structural diagram of the present utility model;

[0029] Figure 2 This is a top view of the structure of this utility model;

[0030] Figure 3 This is a side view of the structure of this utility model;

[0031] Figure 4 A schematic diagram showing the installation location of the fan and the direction of gas flow;

[0032] Figure 5 This is an enlarged schematic diagram of the conveying component. Detailed Implementation

[0033] In the following description, only certain exemplary embodiments are briefly described. As those skilled in the art will recognize, the described embodiments can be modified in various ways without departing from the spirit or scope of this invention. Therefore, the drawings and description are considered exemplary in nature and not restrictive.

[0034] The following disclosure provides many different embodiments or examples for implementing various structures of this invention. To simplify the disclosure, specific examples of components and arrangements are described below. These are merely examples and are not intended to limit the scope of the invention. Furthermore, reference numerals and / or letters may be repeated in different examples; such repetition is for simplification and clarity and does not in itself indicate a relationship between the various embodiments and / or arrangements discussed. In addition, examples of various specific processes and materials are provided in this invention, but those skilled in the art will recognize the application of other processes and / or the use of other materials.

[0035] The embodiments of this utility model will now be described in detail with reference to the accompanying drawings.

[0036] See Figure 1 , Figure 2 and Figure 3This embodiment discloses a hot air furnace, including a furnace body 10, a temperature control component 20, a conveying component 30, and a nitrogen filling component 40. The furnace body 10 has a cavity structure that provides necessary space for the installation of the conveying component 30, which is used to convey silicon wafers within the cavity structure of the furnace body 10. The temperature control component 20 and the nitrogen filling component 40 are located at the top of the furnace body 10. The temperature control component 20 regulates the temperature inside the furnace body 10, and the nitrogen filling component 40 fills a portion of the furnace body 10 with nitrogen.

[0037] Specifically, the furnace body 10 is generally rectangular in shape, and the cavity structure inside the furnace body 10 is arranged along the length of the furnace body 10, so that the conveying assembly 30 can convey silicon wafers from one end of the furnace body 10 to the other end.

[0038] The furnace body 10 has a temperature control zone 12 consisting of multiple single-temperature zones. All single-temperature zones are arranged sequentially along the length of the furnace body 10, and the temperatures in different single-temperature zones vary. Multiple temperature control components 20 are installed on the furnace body 10, and each temperature control component 20 is correspondingly installed on each single-temperature zone. The temperature in each single-temperature zone is controlled by the corresponding temperature control component 20 on each single-temperature zone.

[0039] The conveying assembly 30 is located in the lower half of the furnace body 10 and passes through the entire temperature control zone 12. Both ends of the conveying assembly 30 also extend out from both ends of the furnace body 10.

[0040] The nitrogen filling component 40 has a gas supply end 41 connected to multiple single-temperature zones located in the middle of the temperature control zone 12. By filling the single-temperature zones connected to its gas supply end 41 with nitrogen at a certain temperature through the nitrogen filling component 40, and under the control of the corresponding temperature control component 20, the silicon wafers in these single-temperature zones can be heated. At the same time, the high-temperature nitrogen in contact with the silicon wafers can also prevent the silicon wafers from being oxidized at high temperatures.

[0041] In this embodiment, multiple single-temperature zones are set within the furnace body 10. The temperature in all single-temperature zones is regulated by a temperature control component 20. Then, a conveying component 30 conveys the silicon wafer from one end of the temperature control zone 12 to the other. During the conveying process by the conveying component 30, the silicon wafer is heated in the first few single-temperature zones and then cooled in the later single-temperature zones, thereby completing the annealing of the silicon wafer.

[0042] The upper limit of the nitrogen temperature in each single-temperature zone is designed to be nearly constant (ignoring the error range). Once the nitrogen in each single-temperature zone is heated to the corresponding temperature, it is only necessary to maintain the constant internal temperature, and the temperature of the silicon wafer is affected by the temperature of the nitrogen. The conveying component 30 transports the silicon wafer to some single-temperature zones for heating and others for cooling. Different stages of the annealing process are operated in different single-temperature zones, thereby improving overall work efficiency. At the same time, the constant value of the gas temperature in each single-temperature zone is also adjustable. Therefore, when processing the silicon wafer, only the temperature of the nitrogen in the single-temperature zone needs to be adjusted to raise or lower the temperature of the silicon wafer, achieving a more rational use of resources.

[0043] In one specific embodiment:

[0044] like Figure 1 As shown, the temperature control zone 12 inside the furnace body 10 includes five single-temperature zones, among which, Figure 1 Each dashed box in the diagram represents a single temperature zone. The five single temperature zones are preheating zone 121, heating zone 122, high temperature zone 123, cooling zone 124, and cooling zone 125, and are arranged sequentially along the length of the furnace body 10.

[0045] And from Figure 1 It can also be seen that the conveying component 30 passes through the entire temperature control zone 12, specifically from the preheating zone 121 into the furnace body 10, and then from the cooling zone 125 out of the furnace body 10.

[0046] All the aforementioned temperature control components 20 are respectively installed in the preheating zone 121, the heating zone 122, the high temperature zone 123, the cooling zone 124, and the cooling zone 125. Among them, the three temperature control components 20 located in the preheating zone 121, the heating zone 122, and the high temperature zone 123 cause the gas temperature in these three single temperature zones to increase sequentially, while the two temperature control components 20 located in the cooling zone 124 and the cooling zone 125 cause the temperature in these two single temperature zones to decrease sequentially.

[0047] In this embodiment, the conveying component 30 carries the silicon wafer to be preheated in the preheating zone 121, then heated in the heating zone 122 until the specified temperature is reached, and then continuously heated in the high temperature zone 123. After heating is completed, the wafer is cooled in the cooling zone 124 and cooled in the cooling zone 125, thereby completing the entire annealing process.

[0048] Preferably, such as Figure 1 As shown, the high-temperature zone 123 has at least three zones, namely the first high-temperature zone, the second high-temperature zone, and the third high-temperature zone. All three high-temperature zones are located between the heating zone 122 and the cooling zone 124. The first high-temperature zone is close to the heating zone 122, the third high-temperature zone is close to the cooling zone 124, and the second high-temperature zone is located between the first high-temperature zone and the third high-temperature zone.

[0049] The purpose of setting up multiple high-temperature zones 123 is that after the silicon wafer enters the first high-temperature zone and is heated for a certain period of time, it can be transferred to the second high-temperature zone for continued heating. At this time, the first high-temperature zone is emptied, and another silicon wafer can be sent into the first high-temperature zone.

[0050] In addition, in this embodiment, the gas supply end 41 of the aforementioned nitrogen filling component 40 is connected to the interior of the heating zone 122, the high-temperature zone 123, and the cooling zone 124. This allows nitrogen gas at a certain temperature to be injected into each of these three temperature zones via the nitrogen filling component 40. The temperature control components 20 installed in each of these three temperature zones adjust the gas temperature, creating temperature differences between them. Furthermore, since the gas temperatures in the heating zone 122, the high-temperature zone 123, and the cooling zone 124 are relatively high, introducing nitrogen gas into these three temperature zones can also prevent the silicon wafer, which is at a high temperature, from oxidizing.

[0051] It needs to be further explained that, such as Figure 2 As shown, the gas supply end 41 of the nitrogen filling component 40 is only connected to the interior of the heating zone 122, the high temperature zone 123 and the cooling zone 124. The interior of the preheating zone 121 and the cooling zone 125 is not connected to the gas supply end 41 of the nitrogen filling component 40. In other words, nitrogen is not introduced into the interior of the preheating zone 121 and the cooling zone 125.

[0052] In another specific embodiment:

[0053] See Figure 5 The conveying assembly 30 includes conveying shafts 31, chains 32, and a motor assembly 33. Multiple conveying shafts 31 are arranged parallel to each other and are connected by multiple chains 32, enabling all conveying shafts 31 to rotate in the same direction. One chain 32 is connected to the output shaft of the motor assembly 33, thus driving all conveying shafts 31 to rotate via the motor assembly 33 and the chain 32. Generally, sprockets are installed at the ends of the conveying shafts 31 and the output shaft of the motor assembly 33, thereby achieving power transmission between the motor assembly 33 and the conveying shafts 31 through the matching of the sprockets and chains 32.

[0054] Preferably, a certain number of conveyor shafts 31, chains 32, and motor units 33 constitute a conveying unit. At least one conveying unit is provided at the bottom of each temperature zone, and the conveying surfaces of all conveying units are on the same plane. Providing one conveying unit in each temperature zone facilitates individual control of the residence time of the silicon wafer within each zone, thereby meeting production process requirements.

[0055] Preferably, a furnace door 50 is provided between two adjacent single temperature zones. The furnace door 50 can separate the two adjacent single temperature zones to avoid heat exchange between the adjacent single temperature zones, especially between the high temperature zone 123 and the cooling zone 124.

[0056] In another specific embodiment:

[0057] like Figure 4 As shown, the furnace body 10 has an internal partition 15 with an n-shaped cross-section, which divides the interior of the furnace body 10 into a first chamber 11 and a second chamber 13. The first chamber 11 essentially surrounds the second chamber 13 (covering both sides and the top of the second chamber 13). Multiple dampers 14 are provided on the partition 15. These dampers 14 are openable and adjustable, connecting the first chamber 11 and the second chamber 13, allowing nitrogen gas in some single-temperature zones within the temperature control zone 12 to circulate between the first chamber 11 and the second chamber 13. Typically, multiple dampers 14 are provided on both sides of the n-shaped partition 15, but no damper 14 is present on the top of the partition 15. Additionally, Figure 4 The arrows indicate the direction of nitrogen circulation flow.

[0058] The aforementioned conveying assembly 30 is disposed at the lower part of the second chamber 13. The width of the second chamber 13 should be adapted to the width of the conveying assembly 30, and the height of the second chamber 13 should be adapted to the height of the conveying assembly 30 after the silicon wafer is loaded.

[0059] The aforementioned nitrogen filling component 40 has a gas supply end 41 connected to the first chamber 11. The nitrogen filling component 40 can fill the first chamber 11 with nitrogen. The temperature of the nitrogen is regulated by the temperature control component 20. The nitrogen passes through the damper 14 and enters the second chamber 13, thereby heating the silicon wafer in the second chamber 13. It can also form a circulating airflow between the second chamber 13 and the first chamber 11 to reduce heat loss.

[0060] In another specific embodiment:

[0061] The hot blast furnace also includes a blower 60. Specifically, a blower 60 is provided at the top of each single temperature zone. The blades 61 of the blower 60 are located in the cavity of the furnace body 10 (located in the first chamber 11). The blower 60's blades 61 disturb the gas in the first chamber 11 of the furnace body 10, so that the nitrogen in the furnace body 10 can circulate between the first chamber 11 and the second chamber 13 through the damper 14.

[0062] Preferably, each temperature zone is provided with two fans 60 at the top, and the blades 61 of the two fans 60 rotate in opposite directions. By setting two fans 60, the speed of airflow disturbance can be increased and the circulation effect can be enhanced.

[0063] In another specific embodiment:

[0064] The temperature difference between the five individual temperature zones and the specified temperature is ±3℃, and each individual temperature zone is in an anaerobic environment of 2%-20%.

[0065] During operation, a carrier fully loaded with silicon wafers is placed upstream of the preheating zone 121 of the furnace body 10. Three carriers are grouped together and enter the preheating zone 121. After a predetermined waiting time in the preheating zone 121, the furnace door 50 between the preheating zone 121 and the heating zone 122 is opened, and one group of carriers is transferred to the heating zone 122. The furnace door 50 between the preheating zone 121 and the heating zone 122 is then closed. Simultaneously, the nitrogen concentration in the heating zone 122 is monitored, and nitrogen is introduced as needed (to maintain anaerobic conditions). After a predetermined time has elapsed and the oxygen concentration is consistent with that in the high-temperature zone 123, the furnace door 50 between the heating zone 122 and the high-temperature zone 123 is opened for further transfer. Once the process time is satisfied, the wafers are transferred to the cooling zone 124 for cooling, and finally to the cooling zone 125 for further cooling.

[0066] The hot blast furnace structure in this application can transfer multiple carriers fully loaded with silicon wafers at one time. Up to 12 carriers can be annealed within the furnace body 10.

[0067] The embodiments described above merely illustrate specific implementations of this utility model, and while the descriptions are detailed, they should not be construed as limiting the scope of this utility model patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this utility model, and these modifications and improvements all fall within the protection scope of this utility model.

Claims

1. A hot air furnace, characterized in that, include: The furnace body has multiple sequentially arranged single-temperature zones inside; Multiple temperature control components are all located on the furnace body and are configured to correspond one-to-one with each of the single temperature zones; The conveying assembly is located at the bottom of the furnace body and at the bottom of all the single temperature zones; The nitrogen filling component is located on the furnace body, and its gas supply end is connected to the interior of part of the single temperature zone; All of the single temperature zones constitute a temperature control zone, and the conveying component enters the furnace body from one end of the temperature control zone and exits the furnace body from the other end of the temperature control zone.

2. The hot blast stove according to claim 1, characterized in that, The single temperature zone has at least five zones, which are sequentially arranged along the conveying direction of the conveying assembly as a preheating zone, a heating zone, a high-temperature zone, a cooling zone, and a cooling zone.

3. The hot blast stove according to claim 2, characterized in that, The high-temperature zones are multiple and arranged adjacent to each other.

4. The hot blast stove according to claim 2, characterized in that, The nitrogen gas supply end of the nitrogen gas filling component is connected to the interior of the heating zone, the high temperature zone, and the cooling zone.

5. The hot blast stove according to claim 2, characterized in that, The conveying assembly includes several transport units, with one transport unit located in each single temperature zone.

6. The hot blast stove according to claim 5, characterized in that, The transport unit includes: Multiple conveyor shafts are arranged parallel to each other inside the furnace body and are laid from one end of a single temperature zone to the other end, with their length direction perpendicular to the arrangement direction of all single temperature zones; Multiple chains power all of the conveyor shafts, with one chain power-connected to the output shaft of a motor unit.

7. The hot blast stove according to claim 2, characterized in that, A furnace door is provided between two adjacent single-temperature zones.

8. The hot blast stove according to claim 2, characterized in that: The furnace body is provided with an n-shaped partition, which divides the furnace body into a first chamber and a second chamber. The partition has multiple dampers that connect the first chamber and the second chamber. The delivery assembly is located in the second chamber, and the supply end of the nitrogen filling assembly is connected to the first chamber. All the dampers are located on both sides of the partition, and the dampers are openable, closable and adjustable.

9. The hot blast stove according to claim 8, characterized in that, Each of the single temperature zones is equipped with a fan at its top, and the fan blades are located in the first chamber of the furnace body.

10. The hot blast stove according to claim 9, characterized in that, Two fans are arranged side by side at the top of each of the single temperature zones, with the blades of the two fans rotating in opposite directions.

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