Power semiconductor module

Abstract

The utility model provides a power semiconductor module, which comprises a module body, a temperature measuring element and a plurality of connecting terminals, and is characterized in that the module body is provided with a first side surface and a second side surface which are opposite to each other; the temperature measuring element is arranged on the module body and is used for monitoring the temperature of the module body; the plurality of connection terminals comprise a first temperature measurement signal terminal, a second temperature measurement signal terminal and a plurality of driving auxiliary terminals, the first temperature measurement signal terminal and the second temperature measurement signal terminal are connected to the temperature measurement element, the plurality of driving auxiliary terminals are connected with the module body, the first temperature measurement signal terminal is located on the first side surface, and the second temperature measurement signal terminal is located on the second side surface. The second temperature measurement signal terminal is located on the first side surface or the second side surface, and the plurality of driving auxiliary terminals are located on the second side surface. Based on the scheme, the electric gap and the creepage distance between the temperature measurement signal loop and the main power loop can be increased, so that the power semiconductor module is more suitable for application scenes with high voltage grade and high working frequency.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor technology, in particular to a power semiconductor module. BACKGROUND

[0002] The temperature measuring element of the power semiconductor module can monitor the temperature of the module body of the power semiconductor module. However, the structure of the power semiconductor module is relatively compact, the temperature measuring signal terminal of the temperature measuring element is relatively close to the driving auxiliary terminal of the semiconductor chip, and it is difficult to meet the electrical safety requirements of higher application voltage and higher working frequency of the client, so that the client may need to introduce additional electrical isolation measures, thereby increasing the application complexity and application cost. CONTENT OF THE UTILITY MODEL

[0003] The present application provides a power semiconductor module, comprising:

[0004] a module body having a first side and a second side opposite to each other;

[0005] a temperature measuring element arranged on the module body and used for monitoring the temperature of the module body; and

[0006] a plurality of connection terminals including a first temperature measuring signal terminal, a second temperature measuring signal terminal and a plurality of driving auxiliary terminals, the first temperature measuring signal terminal and the second temperature measuring signal terminal are both connected to the temperature measuring element, the plurality of driving auxiliary terminals are all connected to the module body, the first temperature measuring signal terminal is located on the first side, the second temperature measuring signal terminal is located on the first side or the second side, and the plurality of driving auxiliary terminals are located on the second side.

[0007] In some embodiments, the plurality of connection terminals further include a plurality of power supply terminals;

[0008] wherein each power supply terminal is connected to the module body, the plurality of power supply terminals are located on the first side, and the second temperature measuring signal terminal is located on the second side;

[0009] wherein the first temperature measuring signal terminal is arranged adjacent to one of the power supply terminals;

[0010] wherein the polarity of the power supply terminal adjacent to the first temperature measuring signal terminal and the polarity of the first temperature measuring signal terminal are both negative.

[0011] In some embodiments, the plurality of power supply terminals include a direct current positive terminal, a direct current negative terminal and an alternating current terminal arranged in sequence and at intervals, and the first temperature measuring signal terminal is adjacent to the direct current negative terminal.

[0012] In some embodiments, the plurality of drive auxiliary terminals comprises a first source drive auxiliary terminal and a second source drive auxiliary terminal, the first source drive auxiliary terminal and the second source drive auxiliary terminal are both connected to the module body and located on the second side, the first source drive auxiliary terminal is positive, the second source drive auxiliary terminal and the second temperature measurement signal terminal are negative, and the second temperature measurement signal terminal is close to the second source drive auxiliary terminal.

[0013] In some embodiments, the plurality of connection terminals further comprises a temperature measurement standby terminal, and the temperature measurement standby terminal is located on the second side.

[0014] The temperature measurement element is connected to the second temperature measurement signal terminal, and the temperature measurement element is connected to the first temperature measurement signal terminal or the temperature measurement standby terminal.

[0015] In some embodiments, the module body comprises a bottom surface and a top surface arranged oppositely, and the bottom surface and the top surface are both located between the first side and the second side.

[0016] Each connection terminal comprises a first connection segment, a second connection segment and a third connection segment connected in sequence, the module body is connected to the first connection segment, and the third connection segment extends obliquely to the plane where the bottom surface is located from the second connection segment in a direction away from the first connection segment.

[0017] In some embodiments, the third connection segment forms an angle with the plane where the bottom surface is located, and the angle is not less than 4 degrees and not more than 7 degrees.

[0018] In some embodiments, the plurality of connection terminals further comprises a plurality of power supply terminals, and the plurality of power supply terminals are located on the first side.

[0019] In some embodiments, the cross-sectional area of the power supply terminal is larger than the cross-sectional area of the drive auxiliary terminal.

[0020] In some embodiments, the temperature measurement element is a thermistor or a diode temperature measurement element.

[0021] In some embodiments, the power semiconductor module is a surface mount device.

[0022] The power semiconductor module provided by the application embodiment comprises a module body, a temperature measuring element and a plurality of connection terminals, the module body has a first side surface and a second side surface opposite to each other; the temperature measuring element is arranged on the module body and is used for monitoring the temperature of the module body; the plurality of connection terminals comprise a first temperature measuring signal terminal, a second temperature measuring signal terminal and a plurality of driving auxiliary terminals, the first temperature measuring signal terminal and the second temperature measuring signal terminal are both connected to the temperature measuring element, and the plurality of driving auxiliary terminals are all connected to the module body, the first temperature measuring signal terminal is located on the first side surface, the second temperature measuring signal terminal is located on the first side surface or the second side surface, and the plurality of driving auxiliary terminals are located on the second side surface. In this way, the first temperature measuring signal terminal is located on the first side surface, and the second temperature measuring signal terminal is located on the first side surface or the second side surface, so that a larger physical isolation is maintained between the first temperature measuring signal terminal and the plurality of driving auxiliary terminals, the electrical clearance and the creepage distance between the temperature measuring signal loop and the main power loop are facilitated to be arranged by the technician, the stable operation of the power semiconductor module under extreme conditions is ensured, thereby helping to reduce the risk of failure of the power semiconductor module, and further helping to meet the safety use requirement of the user and making the power semiconductor module more suitable for application scenarios of high voltage levels and high working frequencies. In addition, the larger physical isolation is maintained between the first temperature measuring signal terminal and the plurality of driving auxiliary terminals, which helps to reduce the risk of arc discharge under a high-voltage environment, so that the stable operation of the power semiconductor module under extreme conditions is ensured, thereby helping to reduce the risk of failure of the power semiconductor module. BRIEF DESCRIPTION OF DRAWINGS

[0023] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or the prior art description. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can also be obtained according to the structures shown in these drawings without creative labor for those skilled in the art.

[0024] Figure 1 A structural schematic diagram of a power semiconductor module provided by the present application is shown.

[0025] Figure 2 A structural schematic diagram of a power semiconductor module provided by the present application is shown. Figure 1 A circuit principle schematic diagram of a medium power semiconductor module is shown.

[0026] Figure 3 A structural schematic diagram of a power semiconductor module provided by the present application is shown. Figure 1 A structural schematic diagram of a power semiconductor module provided by the present application is shown.

[0027] Figure 4 A structural schematic diagram of a power semiconductor module provided by the present application is shown.

[0028] Figure 5A schematic diagram of the circuit principle of a medium power semiconductor module is shown. Figure 4 A schematic diagram of the circuit principle of a medium power semiconductor module is shown.

[0029] Explanation of reference numerals:

[0030] Power semiconductor module 10, module body 100, first side surface 110, second side surface 120, top surface 130, bottom surface 140, plastic package 150, power semiconductor element 160, temperature measuring element 200, connection terminal 300, first connection section 301, second connection section 302, third connection section 303, first temperature measuring signal terminal 310, second temperature measuring signal terminal 320, power supply terminal 330, direct current positive terminal 331, direct current negative terminal 332, alternating current terminal 333, temperature measuring standby terminal 340, drive auxiliary terminal 350, first gate signal terminal 351, first source drive auxiliary terminal 352, second source drive auxiliary terminal 353, second gate signal terminal 354.

[0031] The implementation, functional features and advantages of the present application will be further described with reference to the embodiments and the accompanying drawings. DETAILED DESCRIPTION

[0032] In order to make the purpose, technical solutions and advantages of the present application more clear, the following will further describe the embodiments of the present application with reference to the accompanying drawings.

[0033] The following description of the drawings relates to the drawings, unless otherwise indicated, the same numerals in different drawings represent the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all the embodiments consistent with the present application. Instead, they are merely examples of devices and methods consistent with some aspects of the present application as detailed in the appended claims.

[0034] In the description of the present application, it is understood that the terms "first", "second" and the like are used only for the purpose of description and can not be understood as indicating or implying relative importance. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances. In addition, in the description of the present application, unless otherwise specified, "a plurality of" means two or more. "And / or", the association between the associated objects, means that there can be three kinds of relationships, for example, A and / or B, can represent: A alone, A and B exist at the same time, B alone, these three cases. The character " / " generally represents that the associated objects before and after are a kind of "or" relationship.

[0035] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description herein is for describing particular embodiments only and is not intended to be limiting of the application. As used in this description, the singular forms "a", "an" and "the" include plural references unless the context clearly dictates otherwise.

[0036] Referring to Figure 1 The application provides a power semiconductor module 10, which can be applied to the fields of industrial automation, new energy vehicles, rail transit, renewable energy power generation, etc. The power semiconductor module 10 can have the functions of power conversion and power management, etc. The power semiconductor module 10 can be installed on a drive board (e.g. a PCB) for use.

[0037] The power semiconductor module 10 can include a module body 100, a temperature measuring element 200 and a plurality of connection terminals 300. The module body 100 has a first side surface 110 and a second side surface 120 opposite to each other. The temperature measuring element 200 is arranged on the module body 100 and used for monitoring the temperature of the module body 100. The plurality of connection terminals 300 include a first temperature measuring signal terminal 310, a second temperature measuring signal terminal 320 and a plurality of drive auxiliary terminals 350. The first temperature measuring signal terminal 310 and the second temperature measuring signal terminal 320 are both connected to the temperature measuring element 200. The plurality of drive auxiliary terminals 350 are all connected to the module body 100. The first temperature measuring signal terminal 310 is located on the first side surface 110. The second temperature measuring signal terminal 320 is located on the first side surface 110 or the second side surface 120. The plurality of drive auxiliary terminals 350 are located on the second side surface 120.

[0038] In this way, the first temperature measuring signal terminal 310 is located on the first side surface 110, and the second temperature measuring signal terminal 320 is located on the first side surface 110 or the second side surface 120. Therefore, a large physical isolation is maintained between the first temperature measuring signal terminal 310 and the plurality of drive auxiliary terminals 350. This facilitates technicians to arrange the electrical clearance and the creepage distance between the temperature measuring signal loop and the main power loop, and ensures the stable operation of the power semiconductor module 10 under extreme conditions. Therefore, it is helpful to reduce the risk of failure of the power semiconductor module 10, and thus it is helpful to meet the safety use requirements of users, and make the power semiconductor module 10 more suitable for application scenarios with high voltage levels and high working frequencies.

[0039] In addition, the large physical isolation between the first temperature measuring signal terminal 310 and the plurality of drive auxiliary terminals 350 helps to reduce the risk of arc discharge in a high-voltage environment, so as to ensure the stable operation of the power semiconductor module 10 under extreme conditions, and thus it is helpful to reduce the risk of failure of the power semiconductor module 10.

[0040] In some embodiments, the second temperature measurement signal terminal 320 can be arranged on the first side 110; or the second temperature measurement signal terminal 320 can be arranged on the second side 120. When the second temperature measurement signal terminal 320 is arranged on the second side 120, the second temperature measurement signal terminal 320 can also maintain a larger physical distance with the plurality of drive auxiliary terminals 350.

[0041] In some embodiments, the plurality of connection terminals 300 further comprises a plurality of power supply terminals 330. Each power supply terminal 330 is connected to the module body 100, and the plurality of power supply terminals 330 are located on the first side 110, and the second temperature measurement signal terminal 320 is located on the second side 120. The first temperature measurement signal terminal 310 is arranged adjacent to one of the power supply terminals 330. The polarity of the power supply terminal 330 adjacent to the first temperature measurement signal terminal 310 and the polarity of the first temperature measurement signal terminal 310 are both negative.

[0042] In this way, the polarity of the power supply terminal 330 adjacent to the first temperature measurement signal terminal 310 and the polarity of the first temperature measurement signal terminal 310 are both negative, so that the two terminals have the same potential, thereby reducing the potential difference between them, reducing the electromagnetic interference caused by the potential difference, and thereby helping to maintain the stability of the temperature monitoring signal of the temperature measurement element 200.

[0043] In addition, the first temperature measurement signal terminal 310 is located on the first side 110, and the second temperature measurement signal terminal 320 is located on the second side 120, so that a larger physical distance is maintained between the first temperature measurement signal terminal and the second temperature measurement signal terminal 320, which helps to reduce the risk of failure of the power semiconductor module 10.

[0044] Furthermore, the plurality of power supply terminals 330 are arranged in sequence and spaced apart on the first side 110 of the module body 100, which facilitates the concentrated wiring and installation of the designers, thereby making the wiring more orderly and reducing the situation of line crossing and confusion, and also improving the overall aesthetics and practicality of the module. At the same time, through the clear polarity design, it can effectively prevent incorrect connection. For example, during installation, the technician can correctly connect according to the polarity identification of the terminal, avoiding electrical failure or damage caused by misconnection.

[0045] In some embodiments, the plurality of power supply terminals 330 comprises a direct current positive terminal 331, a direct current negative terminal 332 and an alternating current terminal 333 arranged in sequence and spaced apart, and the first temperature measurement signal terminal 310 is adjacent to the direct current negative terminal 332. Among them, the first temperature measurement signal terminal 310 can be arranged between the direct current positive terminal 331 and the direct current negative terminal 332; or the first temperature measurement signal terminal 310 can be arranged between the direct current negative terminal 332 and the alternating current terminal 333.

[0046] In this way, the first temperature signal terminal 310 is disposed adjacent to the DC negative terminal 332. Since the DC negative terminal 332 is usually the reference ground or low potential point in the circuit, it helps to reduce the electromagnetic interference received by the module body 100. The adjacent low potential terminal helps to reduce the influence of high frequency noise on the temperature monitoring signal, ensuring the accuracy and reliability of the temperature data.

[0047] In other embodiments, when the AC terminal 333 is negative, i.e., the AC terminal 333 is at a low potential, the first temperature signal terminal 310 can be adjacent to the AC terminal 333, so that the first temperature terminal and the AC terminal 333 are both at a low potential.

[0048] In some embodiments, the plurality of drive auxiliary terminals 350 includes a first source drive auxiliary terminal 352 and a second source drive auxiliary terminal 353, both of which are connected to the module body 100 and located on the second side 120. The first source drive auxiliary terminal 352 is positive, the second source drive auxiliary terminal 353 and the second temperature signal terminal 320 are negative, and the second temperature signal terminal 320 is adjacent to the second source drive auxiliary terminal 353.

[0049] In some embodiments, the plurality of drive auxiliary terminals 350 includes a first source drive auxiliary terminal 352 and a second source drive auxiliary terminal 353, both of which are connected to the module body 100 and located on the second side 120. The first source drive auxiliary terminal 352 is positive, the second source drive auxiliary terminal 353 and the second temperature signal terminal 320 are negative, and the second temperature signal terminal 320 is adjacent to the second source drive auxiliary terminal 353.

[0050] In this way, the second temperature signal terminal 320 and the second source drive auxiliary terminal 353 are in a low potential environment, and the second temperature signal terminal 320 is physically isolated from the first source drive auxiliary terminal 352, which helps to reduce the influence of external electromagnetic interference on the second temperature signal terminal 320.

[0051] In addition, since the potential of the second temperature signal terminal 320 is low (close to ground potential), it helps to reduce the influence of common mode noise on the measurement accuracy of the second temperature signal terminal 320.

[0052] Figure 2 For Figure 1The circuit diagram of the power semiconductor module 10 is shown below. The explanation focuses on an example where the power semiconductor module 10 includes two switching transistors 160 and a temperature sensing element 200. The temperature sensing element 200 can be a diode. The two switching transistors 160 form a half-bridge circuit, with the temperature sensing element 200 positioned adjacent to one of the switching transistors 160. The temperature sensing element 200 measures the temperature of one of the switching transistors 160. Multiple drive auxiliary terminals 350 are connected to the corresponding switching transistors 160. The first source drive auxiliary terminal 352 is positive. The multiple drive auxiliary terminals 350 also include a first gate signal terminal 351 and a second gate signal terminal 354. Both the first gate signal terminal 351 and the second gate signal terminal 354 are negative. Both the first gate signal terminal 351 and the second gate signal terminal 354 are located on the second side 120. The first gate signal terminal 351, the first source drive auxiliary terminal 352, the second temperature measurement signal terminal 320, the second source drive auxiliary terminal 353, and the second gate signal terminal 354 are arranged sequentially at intervals. The distance between the first source drive auxiliary terminal 352 and the second temperature measurement signal terminal 320 is greater than the distance between any two other adjacent connection terminals 300 located on the second side 120.

[0053] Thus, since the first source drive auxiliary terminal 352 is at a high potential and the second temperature measurement signal terminal 320 is at a low potential, the larger physical distance between the two can increase the electrical clearance.

[0054] In addition, the first source drive auxiliary terminal 352, being a high potential point, is prone to becoming a source of electromagnetic interference. The large distance between the first source drive auxiliary terminal 352 and the second temperature measuring terminal helps to reduce the influence of the temperature monitoring signal of the first source drive auxiliary terminal 352, ensuring the accuracy and stability of temperature measurement.

[0055] Figure 3 for Figure 1 The diagram shows the structure of the power semiconductor module from another perspective. Figure 3 As shown, the module body 100 includes a bottom surface 140 and a top surface 130 disposed opposite to each other, with the bottom surface 140 and the top surface 130 each located between the first side surface 110 and the second side surface 120; each connection terminal 300 includes a first connection segment 301, a second connection segment 302 and a third connection segment 303 connected in sequence, the module body 100 is connected to the first connection segment 301, and the third connection segment 303 extends obliquely from the second connection segment 302 toward the plane where the bottom surface 140 is located in a direction away from the first connection segment 301.

[0056] Thus, when the power semiconductor module 10 is soldered to the drive board, the inclined third connection section 303 helps to guide the solder to flow uniformly to the soldering points between the third connection section 303 and the drive board during the soldering process, so that the solder can better cover the entire soldering area (the soldering points between the third connection section 303 and the drive board), thereby forming a reliable electrical connection between the power semiconductor module 10 and the drive board.

[0057] In addition, in actual applications, there can be vibrations or mechanical impacts between the power semiconductor module 10 and the drive board, so that the inclined third connection section 303 can better disperse the mechanical stress received by the power semiconductor module 10, thereby helping to reduce the risk of failure of the soldering points between the power semiconductor module 10 and the drive board.

[0058] In some embodiments, the included angle θ between the third connection section 303 and the plane where the bottom surface 140 is located is not less than 4 degrees and not more than 7 degrees. The included angle θ between the third connection section 303 and the plane where the bottom surface 140 is located can be, but is not limited to, 4 degrees, 4.5 degrees, 5 degrees, 5.5 degrees, 6 degrees, 6.5 degrees, or 7 degrees.

[0059] Thus, the included angle θ between the third connection section 303 and the plane where the bottom surface 140 is located is in the range of 4 degrees to 7 degrees, and the appropriate angle helps to guide the solder to flow to the correct soldering position, avoiding excessive accumulation of solder or forming a bridging phenomenon, so that each soldering point between the power semiconductor module 10 and the drive board can obtain an appropriate amount of solder, thereby improving the soldering quality and reliability.

[0060] In addition, the included angle θ between the third connection section 303 and the plane where the bottom surface 140 is located is in the range of 4 degrees to 7 degrees, so that when the connection terminal 300 is subjected to external mechanical stress, the stress can be more uniformly distributed on the connection terminal 300, rather than being concentrated at the soldering points. This reduces the risk of cracking or falling off of the soldering points due to local stress concentration. Moreover, the third connection section 303 has an appropriate inclination angle, which helps to maintain the structural stability of the power semiconductor module 10 when subjected to vibrations or impacts.

[0061] Please refer to Figure 4 , Figure 4 Another structure of a power semiconductor module is provided in the present application. Figure 4 The power semiconductor module shown has many commonalities with Figures 1-3 and will not be repeated here. The following will mainly introduce Figure 4 the power semiconductor module shown in Figures 1-3 which is not shown in the power semiconductor module shown in Figure 4As shown, in some embodiments, the plurality of connection terminals 300 further comprises a temperature measurement spare terminal 340 located on the second side 120; wherein the temperature measurement element 200 is connected to the second temperature measurement signal terminal 320, and the temperature measurement element 200 is connected to the first temperature measurement signal terminal 310 or the temperature measurement spare terminal 340. Wherein, at the same time period, the temperature measurement element 200 is connected to the second temperature measurement signal terminal 320 and the first temperature measurement signal terminal 310; or the temperature measurement element 200 is connected to the second temperature measurement signal terminal 320 and the temperature measurement spare terminal 340. The temperature measurement spare terminal 340 can be connected to the temperature measurement element 200 by internal activation or external wiring.

[0062] In this way, the power semiconductor module 10 adds the temperature measurement spare terminal 340, which can immediately take over the temperature monitoring task when the first temperature measurement signal terminal 310 fails or is damaged, so that the power semiconductor module 10 can operate normally.

[0063] In addition, the power semiconductor module 10 additionally adds the temperature measurement spare terminal 340, so that the user can flexibly configure according to different voltage level requirements, thereby helping to meet the voltage level requirements of different users.

[0064] In some embodiments, the distance between the temperature measurement spare terminal 340 and the second temperature measurement signal terminal 320 is less than the distance between the first temperature measurement signal terminal 310 and the second temperature measurement signal terminal 320. In this way, in a high-voltage application scenario, the user can choose to use the first temperature measurement signal terminal 310 and the second temperature measurement signal terminal 320 with higher electrical isolation performance; while in a low-voltage application scenario, the user can use the temperature measurement spare terminal 340 and the second temperature measurement signal terminal 320, so that the driving board connected to the power semiconductor module 10 is easy to wire.

[0065] Figure 5 For Figure 4 the circuit principle diagram of the power semiconductor module 10 in Figure 5 The power semiconductor module 10 shown has many commonalities with Figure 2 will not be repeated here. The following will mainly be on Figure 5 The power semiconductor module 10 shown in Figure 2The first gate signal terminal 351, the first source drive auxiliary terminal 352, the second temperature measurement signal terminal 320, the temperature measurement standby terminal 340, the second source drive auxiliary terminal 353 and the second gate signal terminal 354 are arranged in sequence and are spaced. In this way, when the temperature measurement element 200 is connected to the first temperature measurement signal terminal 310 and the second temperature measurement signal terminal 320, the temperature measurement standby terminal 340 can play a spacing role to block the first source drive auxiliary terminal 352 and the second temperature measurement signal terminal 320.

[0066] In addition to the above, the power semiconductor module can also have other features, improvements and variations.

[0067] For example, in some embodiments, the plurality of connection terminals 300 further include a plurality of power supply terminals 330 and a plurality of drive auxiliary terminals 350, the plurality of power supply terminals 330 are located on the first side 110, and the plurality of drive auxiliary terminals 350 are located on the second side 120. In this way, the power semiconductor module 10 arranges the power supply terminals 330 and the drive auxiliary terminals 350 on different sides (the first side 110 and the second side 120) of the module body 100, which helps to improve the electrical isolation performance of the power semiconductor module 10, thereby helping to reduce the risk of arc discharge, and further helping to improve the safety and reliability of the power semiconductor module 10.

[0068] In addition, the power supply terminals 330 are usually related to high-frequency noise and transient current, and the power semiconductor module 10 arranges different functional terminals separately, which helps the drive auxiliary terminals 350 to reduce the influence of electromagnetic interference, thereby helping to ensure the stability and accuracy of signal transmission of the drive auxiliary terminals 350.

[0069] Moreover, the power semiconductor module 10 arranges the power supply terminals 330 and the drive auxiliary terminals 350 separately, which can simplify the wiring process with the drive board of the power semiconductor module 10, thereby helping to reduce the situation of line crossing and confusion. At the same time, the power supply terminals 330 and the drive auxiliary terminals 350 are arranged on different sides of the module body 100, which can make the overall structure of the power semiconductor module 10 more reasonable and compact, and help to enhance the mechanical strength and stability of the power semiconductor module 10, thereby helping the power semiconductor module 10 to better resist external vibration and impact when the drive board is set, and further enabling the power semiconductor module 10 to run stably for a long time in harsh working environment.

[0070] In some embodiments, the cross-sectional area of the power terminal 330 is larger than the cross-sectional area of the drive assist terminal 350. In this way, the power terminal 330 has a larger cross-sectional area so that the power terminal 330 can carry a larger current without overheating or being damaged. At the same time, the power terminal 330 has a larger cross-sectional area, which helps to reduce the resistance of the current passing through the power terminal 330, thereby helping to reduce the energy loss of the power terminal 330 due to resistance, and helping to reduce the heat generation of the power terminal 330, thereby helping to prolong the service life of the power terminal 330.

[0071] In addition, the drive assist terminal 350 has a smaller cross-sectional area, so that the drive assist terminal 350 occupies less space, thereby making the design of the power semiconductor module 10 more compact. Moreover, the smaller volume of the drive assist terminal 350 makes the drive assist terminal 350 require less manufacturing material, thereby helping to significantly reduce the material cost of the power semiconductor module 10 in mass production.

[0072] In some embodiments, the temperature measuring element 200 can have various choices. For example, the temperature measuring element 200 can be a thermistor, and the resistance value of the temperature measuring element 200 changes with temperature, so when the temperature of the module body 100 changes, the temperature change of the module body 100 can be inferred by measuring the resistance change of the temperature measuring element 200. The temperature measuring element 200 has high sensitivity, thereby helping the temperature measuring element 200 to provide accurate temperature measurement for the module body 100 within a wide temperature range. In addition, within a certain temperature range, the resistance value of the thermistor changes significantly with temperature, so that the temperature measuring element 200 can quickly respond to the temperature change of the module body 100.

[0073] For another example, the temperature measuring element 200 can be a diode temperature measuring element, so that the temperature measuring element 200 has a good linear relationship between the forward voltage and the temperature within a certain temperature range, and by monitoring the change of the forward voltage of the temperature measuring element 200, the temperature change of the module body 100 can be inferred, thereby making the temperature measuring element 200 can more accurately and quickly monitor the temperature of the module body 100. In addition, the temperature measuring element 200 also has a clear electrode polarity, that is, the temperature measuring element 200 is turned on when it is forward biased, and is turned off when it is reverse biased. If the temperature measuring element 200 is connected reversely (i.e. the positive electrode is connected to the negative power supply and the negative electrode is connected to the positive power supply), the temperature measuring element 200 will not be turned on, thereby making the temperature measuring element 200 cannot work normally, and thereby making the temperature measuring element 200 has the function of preventing wrong connection.

[0074] In some embodiments, the power semiconductor module 10 is a Surface Mount Device (SMD), such that the power semiconductor module 10 can be produced by an automated production line, thereby significantly improving the production efficiency.

[0075] In some embodiments, the module body 100 can include a plastic package 150 and power semiconductor elements 160, and the power semiconductor elements 160 and the temperature sensing element 200 are disposed within the plastic package 150.

[0076] In this way, the plastic package 150 provides good electrical insulation protection, preventing arcing or short-circuiting between the power semiconductor elements 160 and the temperature sensing element 200 and other external components or the environment. At the same time, the plastic package 150 generally has good moisture and water resistance, which can effectively prevent moisture and water from entering the inside of the plastic package 150, avoiding electrical failure or corrosion problems caused by moisture.

[0077] In addition, the plastic package 150 provides physical protection for the internal power semiconductor elements 160 and the temperature sensing element 200, preventing the power semiconductor elements 160 and the temperature sensing element 200 from being affected by mechanical impact, vibration or other external forces during transportation, installation and use, thereby helping to prolong the service life of the power semiconductor module 10,

[0078] Moreover, the plastic package 150 generally has certain heat conduction performance, which can help to conduct the heat generated by the power semiconductor elements 160 to the surface of the plastic package 150, and then dissipate it through a heat sink or other heat dissipation device, thereby avoiding the formation of local hot spots in the power semiconductor module 10.

[0079] In some embodiments, the manufacturing material of the plastic package 150 can be selected in multiple ways, for example, the plastic package 150 can be manufactured by using epoxy resin, such that the plastic package 150 has good electrical insulation performance, mechanical strength and chemical corrosion resistance; for another example, the plastic package 150 can be manufactured by using polyimide, such that the plastic package 150 has better high-temperature resistance and mechanical strength.

[0080] In some embodiments, the top surface 130 of the plastic package 150 can be directly in contact with a heat sink, wherein the heat generated by the power semiconductor elements 160 can be conducted to the top surface 130 of the plastic package 150, and then thermally conducted from the top surface 130 of the plastic package 150 to the heat sink, thereby forming an efficient heat conduction path between the power semiconductor module 10 and the heat sink.

[0081] In some embodiments, the top surface 130 of the plastic package 150 can include metal, such as copper.

[0082] In some embodiments, the power semiconductor element 160 can be a MOSFET (Metal Oxide Semiconductor Field Effect Transistor), so that the power semiconductor module 10 has functions such as circuit conversion and current control. The number of power semiconductor elements 160 can be determined according to actual needs.

[0083] The same or similar reference numerals in the drawings of the embodiments correspond to the same or similar components; in the description of the present application, it should be understood that the orientations or positional relationships indicated by the terms "upper", "lower", "left", "right" and the like are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and therefore the terms describing the positional relationships in the drawings are only used for exemplary illustration and cannot be understood as limiting the present application; for those of ordinary skill in the art, the specific meanings of the above terms can be understood according to the specific circumstances.

[0084] The above is only a preferred embodiment of the present application and is not intended to limit the present application, and any modifications, equivalent replacements and improvements made within the spirit and principles of the present application shall be included in the protection scope of the present application.

Claims

1. A power semiconductor module, characterized by, The power semiconductor module comprises: a module body having a first side and a second side opposite to each other; a temperature measuring element arranged on the module body and used for monitoring the temperature of the module body; and a plurality of connection terminals including a first temperature measuring signal terminal, a second temperature measuring signal terminal and a plurality of drive auxiliary terminals; wherein, the first temperature measuring signal terminal and the second temperature measuring signal terminal are both connected to the temperature measuring element, the plurality of drive auxiliary terminals are all connected to the module body, the first temperature measuring signal terminal is located on the first side, the second temperature measuring signal terminal is located on the first side or the second side, and the plurality of drive auxiliary terminals are located on the second side.

2. The power semiconductor module according to claim 1, characterized in that The plurality of connection terminals further include a plurality of power supply terminals; wherein, each of the power supply terminals is connected to the module body, the plurality of power supply terminals are located on the first side, the second temperature measuring signal terminal is located on the second side, the first temperature measuring signal terminal is arranged adjacent to one of the power supply terminals, and the polarity of the power supply terminal adjacent to the first temperature measuring signal terminal and the polarity of the first temperature measuring signal terminal are both negative.

3. The power semiconductor module according to claim 2, characterized in that The plurality of power supply terminals include a direct current positive terminal, a direct current negative terminal and an alternating current terminal arranged in sequence with intervals, and the first temperature measuring signal terminal is adjacent to the direct current negative terminal.

4. The power semiconductor module of claim 2, wherein The plurality of drive auxiliary terminals include a first source electrode drive auxiliary terminal and a second source electrode drive auxiliary terminal, wherein, the first source electrode drive auxiliary terminal and the second source electrode drive auxiliary terminal are both connected to the module body and located on the second side, the polarity of the first source electrode drive auxiliary terminal is positive, the second source electrode drive auxiliary terminal and the second temperature measuring signal terminal are negative, and the second temperature measuring signal terminal is adjacent to the second source electrode drive auxiliary terminal.

5. The power semiconductor module according to claim 1, characterized in that, The plurality of connection terminals further include a temperature measuring standby terminal located on the second side; wherein, the temperature measuring element is connected to the second temperature measuring signal terminal, and the temperature measuring element is connected to the first temperature measuring signal terminal or the temperature measuring standby terminal.

6. The power semiconductor module according to claim 1, characterized in that The module body includes a bottom surface and a top surface arranged opposite to each other, and the bottom surface and the top surface are each located between the first side and the second side; and each of the connection terminals includes a first connection segment, a second connection segment and a third connection segment connected in sequence, the module body is connected to the first connection segment, and the third connection segment extends obliquely to the plane where the bottom surface is located in a direction away from the first connection segment.

7. The power semiconductor module according to claim 6, characterized in that The included angle between the third connection segment and the plane where the bottom surface is located is not less than 4 degrees and not more than 7 degrees.

8. The power semiconductor module of claim 1, wherein, The plurality of connection terminals further include a plurality of power supply terminals, and the plurality of power supply terminals are located on the first side.

9. The power semiconductor module according to claim 8, characterized in that The cross-sectional area of the power supply terminal is greater than the cross-sectional area of the drive auxiliary terminal.

10. The power semiconductor module according to any one of claims 1 to 9, characterized in that, The temperature measuring element is a thermistor or a diode temperature measuring element; and / or, the power semiconductor module is a surface mount device.

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