Multilayer ceramic piece
By setting staggered metal circuit layers and density buffers in multi-layer ceramic parts, the problem of ceramic cracking caused by differences in sintering shrinkage rate is solved, and the reliability of the product is improved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- XIAMEN HESSEMIC NEW MATERIAL TECH CO LTD
- Filing Date
- 2025-04-15
- Publication Date
- 2026-04-14
AI Technical Summary
In the sintering process of existing multilayer ceramic parts, the large difference in sintering shrinkage rates between the green ceramic sheet and the metal slurry leads to internal stress accumulation, which easily causes cracks and affects product reliability.
By setting staggered first and second metal circuit layers in a multilayer ceramic component and introducing a density buffer zone between high-density and low-density areas, the shrinkage step difference is reduced, preventing excessive shrinkage differences in the ceramic and thus preventing cracking.
It effectively reduces ceramic shrinkage differences, prevents ceramic cracking, and improves product reliability.
Smart Images

Figure CN224123255U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of metal ceramics technology, and in particular to a multilayer ceramic component. Background Technology
[0002] Currently, the ceramic shell is composed of a multi-layered ceramic structure. The ceramic blank is made by casting slurry into rolls, then cutting them into green ceramic sheets of a certain size (the green ceramic sheets contain plasticizers and binders, which make them soft and sticky under certain temperature and pressure, allowing them to deform and bond together during hot isostatic pressing). Holes are then drilled in the green ceramic sheets, filled with metal slurry, and then wires are laid. The wired green ceramic sheets are then positioned and stacked, and finally hot-pressed and sintered (e.g., ...). Figure 1 (As shown). However, due to the significant difference in sintering shrinkage rates between the raw ceramic sheet and the metal slurry, a large internal stress is generated between the ceramic medium and the metal electrode layer after sintering. The more electrode layers there are, the greater the accumulation of internal stress, which can easily lead to internal cracks in the ceramic part and affect the reliability of the product. On the other hand, the density of the metallized green body is greater than that of other locations. During sintering, due to the density difference between the metallized and non-metallized locations, the ceramic shrinkage difference is large, leading to product cracking.
[0003] In view of this, the inventors of this case conducted in-depth research on the above-mentioned problems, which led to the creation of this case. Utility Model Content
[0004] The purpose of this invention is to provide a multilayer ceramic component that improves ceramic cracking by adjusting the metallization circuit scheme.
[0005] To achieve the above objectives, this utility model adopts the following technical solution:
[0006] A multilayer ceramic component includes several stacked green ceramic layers. Each green ceramic layer has a first metal circuit layer and a second metal circuit layer on its upper and lower sides, respectively. Each green ceramic layer has at least one receiving cavity penetrating the upper and lower sides of the green ceramic layer. A connector electrically connected to the first metal circuit layer and the second metal circuit layer is disposed in the receiving cavity.
[0007] The first metal circuit layer and the second metal circuit layer are staggered. After multiple green ceramic layers are stacked one on top of the other, the area that does not overlap with the first metal circuit layer or the second metal circuit layer is a low-density area, the area that only overlaps with the first metal circuit layer or the second metal circuit layer is a density buffer zone, and the area that overlaps with both the first metal circuit layer and the second metal circuit layer is a high-density area. The density buffer zone is located between the high-density area and the low-density area.
[0008] Furthermore, after the multiple green ceramic layers are stacked one on top of the other, the first metal circuit layer on the topmost layer is staggered with the first metal circuit layers of the other green ceramic layers; the second metal circuit layer on the bottommost green ceramic layer is staggered with the second metal circuit layers of the other green ceramic layers.
[0009] Furthermore, the density buffer also includes a first density buffer and a second density buffer. After the multiple green ceramic layers are stacked one on top of the other, the first density buffer overlaps with a portion of the first metal circuit layer or a portion of the second metal circuit layer; the second density buffer overlaps with all of the first metal circuit layers or all of the second metal circuit layers; the first density buffer is disposed between the second density buffer and the low-density region, and the second density buffer is disposed between the first density buffer and the high-density region.
[0010] Furthermore, an insulating layer is provided between the gaps between two adjacent green ceramic layers.
[0011] Furthermore, the metal circuit layer includes one or more of tungsten paste, molybdenum-manganese paste, silver paste, gold paste, or platinum paste.
[0012] Furthermore, the green ceramic layer is alumina ceramic.
[0013] Furthermore, the thickness of the green ceramic layer is 100-300 μm, and the thickness of the metal circuit layer is 5-20 μm.
[0014] By adopting the aforementioned design scheme, the beneficial effects of this utility model are: by having a density buffer zone between the high-density area and the low-density area, the metallization has a density buffer zone in the overlapping area, reducing the shrinkage step difference and preventing the ceramic from cracking due to excessive shrinkage difference. Attached Figure Description
[0015] Figure 1 This is a schematic diagram of a structure in the prior art;
[0016] Figure 2 This is a schematic diagram of the structure of Embodiment 1 of the present utility model;
[0017] Figure 3 This is a schematic diagram of the structure of Embodiment 2 of the present invention;
[0018] In the figure: green ceramic layer 1, accommodating cavity 11, metal circuit layer 2, first metal circuit layer 21, second metal circuit layer 22, connector 3, low density area 41, density buffer zone 42, first density buffer zone 421, second density buffer zone 422, high density area 43. Detailed Implementation
[0019] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.
[0020] Example 1, refer to Figure 2
[0021] A multilayer ceramic component includes several stacked green ceramic layers 1. Each green ceramic layer 1 has a metal circuit layer 2 filled with metal paste on both its upper and lower sides. Each green ceramic layer 1 has at least one accommodating cavity 11 penetrating both sides. A connector 3, filled with metal paste and electrically connected to the metal circuit layers 2 on both sides of the green ceramic layer 1, is disposed within the accommodating cavity 11. In this embodiment, the green ceramic layer 1, the metal circuit layer 2, and the connector 3 are sintered, resulting in a high connection strength between them. Preferably, the green ceramic layer 1 is alumina ceramic, preferably 90%, 96%, or 99% alumina content. These materials possess good insulation, mechanical strength, and high-temperature resistance. Besides alumina ceramic, the green ceramic layer 1 can also be made of other ceramic materials. The metal paste includes one or more of tungsten paste, molybdenum-manganese paste, silver paste, gold paste, or platinum paste.
[0022] Furthermore, an insulating layer (not shown in the figure) is provided between the gaps between two adjacent green ceramic layers 1.
[0023] Furthermore, the aperture of the accommodating cavity 11 is 0.1-0.3mm, which can meet the requirements of miniaturization and high integration density, and the production cost is relatively low.
[0024] Furthermore, the thickness of the green ceramic layer 1 is 100-300μm, and the thickness of the metal circuit layer is 5-20μm, which is easy to process and has a good punching and forming effect.
[0025] An exemplary structure of this embodiment is as follows: Figure 2 As shown, it is composed of three layers of raw porcelain 1 stacked together. Of course, the number of raw porcelain layers 1 can also be other numbers.
[0026] The metal circuit layers 2 (defined as the first metal circuit layer 21 and the second metal circuit layer 22 for ease of description) on both sides of each green ceramic layer 1 are staggered. After multiple green ceramic layers 1 are stacked one on top of the other, the area that does not overlap with the first metal circuit layer 21 and the second metal circuit layer 22 is a low-density area 41, the area that overlaps with either the first metal circuit layer 21 or the second metal circuit layer 22 is a density buffer zone 42, and the area that overlaps with both the first metal circuit layer 21 and the second metal circuit layer 22 is a high-density area 43. The density buffer zone 42 is located between the high-density area 43 and the low-density area 41. It is worth noting that in this embodiment, the middle part of the high-density area 43 is on the same straight line as each layer.
[0027] By adopting the aforementioned design scheme, the beneficial effects of this utility model are: by having a density buffer zone 42 between the high-density region 43 and the low-density region 41, the metallization has a density buffer zone 42 in the overlapping area, reducing the shrinkage step difference and preventing the ceramic from cracking due to excessive shrinkage difference.
[0028] Example 2, refer to Figure 3
[0029] The only difference between this embodiment and Embodiment 1 is that:
[0030] After multiple green ceramic layers 1 are stacked one on top of the other, the first metal circuit layer 21 of the uppermost green ceramic layer 1 is staggered with the first metal circuit layer 21 of the other green ceramic layers 1; the second metal circuit layer 22 of the lowermost green ceramic layer 1 is staggered with the second metal circuit layer 22 of the other green ceramic layers 1.
[0031] The density buffer 42 also includes a first density buffer 421 and a second density buffer 422. After multiple green ceramic layers 1 are stacked on top of each other, the first density buffer 421 overlaps with the first metal circuit layer 21 of a portion of the green ceramic layers 1, or overlaps with the second metal circuit layer 22 of a portion of the green ceramic layers 1; the second density buffer 422 overlaps with the first metal circuit layer 21 of all green ceramic layers 1, or overlaps with the second metal circuit layer 22 of all green ceramic layers 1; the first density buffer 421 is disposed between the second density buffer 422 and the low density region 41, and the second density buffer 422 is disposed between the first density buffer 421 and the high density region 43.
[0032] This embodiment is preferred over Embodiment 1.
[0033] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principles and spirit of the present invention, the scope of which is defined by the appended claims and their equivalents.
Claims
1. A multilayer ceramic component, characterized in that: The device comprises several stacked green ceramic layers. Each green ceramic layer has a first metal circuit layer and a second metal circuit layer on its upper and lower sides, respectively. Each green ceramic layer has at least one accommodating cavity penetrating both sides of the green ceramic layer. The accommodating cavity contains a connector electrically connected to the first metal circuit layer and the second metal circuit layer. The first metal circuit layer and the second metal circuit layer are staggered. After the multiple green ceramic layers are stacked, the area that does not overlap with the first metal circuit layer or the second metal circuit layer is a low-density area, the area that overlaps only with the first metal circuit layer or the second metal circuit layer is a density buffer zone, and the area that overlaps with both the first metal circuit layer and the second metal circuit layer is a high-density area. The density buffer zone is located between the high-density area and the low-density area.
2. The multilayer ceramic part according to claim 1, characterized in that: After multiple green ceramic layers are stacked one on top of the other, the first metal circuit layer on the topmost layer is staggered with the first metal circuit layers of the other green ceramic layers; the second metal circuit layer on the bottommost green ceramic layer is staggered with the second metal circuit layers of the other green ceramic layers.
3. A multilayer ceramic component according to claim 2, characterized in that: The density buffer also includes a first density buffer and a second density buffer. After the multiple green ceramic layers are stacked one on top of the other, the first density buffer overlaps with a portion of the first metal circuit layer or a portion of the second metal circuit layer; the second density buffer overlaps with all of the first metal circuit layers or all of the second metal circuit layers; the first density buffer is disposed between the second density buffer and the low density region, and the second density buffer is disposed between the first density buffer and the high density region.
4. A multilayer ceramic component according to claim 1, characterized in that: An insulating layer is provided between the gaps between two adjacent green ceramic layers.
5. A multilayer ceramic component according to claim 1, characterized in that: The metal circuit layer includes one or more of tungsten paste, molybdenum-manganese paste, silver paste, gold paste, or platinum paste.
6. A multilayer ceramic part according to claim 1, characterized in that: The green ceramic layer is alumina ceramic.
7. A multilayer ceramic part according to claim 1, characterized in that: The thickness of the green ceramic layer is 100-300 μm, and the thickness of the metal circuit layer is 5-20 μm.