Substrate carrier provided with diversion trench
By introducing a gas uniform groove to buffer and diffuse the driving gas in the semiconductor device growth equipment, the problem of impact turbulence caused by the escape of the guide groove is solved, and the uniformity of the process gas flow field and the film quality are improved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- LANHE SEMICONDUCTOR TECHNOLOGY (CHANGXING) CO LTD
- Filing Date
- 2025-05-20
- Publication Date
- 2026-04-17
AI Technical Summary
In semiconductor device growth equipment, the escaping driving gas from the channel groove generates impact turbulence at the substrate and the edge of the cavity, affecting the uniformity of the process gas flow field and leading to a decrease in film quality.
A substrate carrier with a flow guide groove is designed, comprising a flow guide groove and a gas equalization groove. The gas equalization groove extends across the extension path at the end of the flow guide groove, buffering and diffusing the driving gas, reducing the flow rate and expanding the diffusion range, and reducing the amount of gas escaping at the edge of the cavity.
By designing a uniform gas groove, the impact turbulence of the driving gas in local areas of the substrate and the edge of the cavity is reduced, the uniformity of the process gas flow field is improved, and the film quality is enhanced.
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Figure CN224133247U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor device manufacturing equipment technology, and more particularly to substrate carriers with flow channels. Background Technology
[0002] Semiconductor device growth equipment is a device that uses a gas reaction source to perform epitaxial growth on the surface of a substrate to form a solid thin film material. It is widely used in the field of semiconductor device fabrication.
[0003] Semiconductor device growth equipment includes a substrate support. Process gases are introduced into the substrate area of the substrate support, and epitaxial growth is performed under specific temperature and pressure conditions to form a solid film. To improve substrate temperature uniformity and ensure homogenization of the surrounding process gases to obtain a high-quality solid film, spiral-shaped flow channels are provided at the bottom of the recesses on the substrate supporting the substrate. Drive gas channels are also provided within the substrate, allowing the drive gas to flow within the flow channels to create a support cushion that rotates the substrate.
[0004] However, the escape of the driving gas toward the gap between the base and the edge of the recess is inevitable. Moreover, the driving gas rushing out from the guide groove has a certain flow velocity and flow direction. If it is not effectively controlled, the driving gas escaping from the base and the edge of the recess will generate a series of impact turbulences in some local areas at the base and the edge of the recess, which will significantly disturb the process gas flow field above the substrate and be detrimental to the film formation quality. Utility Model Content
[0005] The purpose of this application is to provide a substrate carrier with a flow channel, which helps to reduce or avoid the problem that the driving gas escaping from the flow channel generates impact turbulence in several local areas at the substrate and the edge of the cavity, which significantly disturbs the process gas flow field above the substrate and is detrimental to the film formation quality.
[0006] To achieve the above objectives, the substrate carrier with a flow guide groove provided in this application includes a carrier body, a cavity, a flow guide groove, and a gas equalization groove. The carrier body has a driving gas input channel. The cavity is located on the bearing surface of the carrier body for bearing the substrate. The flow guide groove is located on the inner bottom surface of the cavity, and the starting end of the flow guide groove is connected to the driving gas input channel to allow the driving gas to flow into the flow guide groove and drive the substrate to rotate. The gas equalization groove extends across the extension path of the end portion of the flow guide groove, allowing the driving gas escaping from the end portion to be buffered and have its diffusion range expanded by the gas equalization groove.
[0007] Preferably, the gas equalization groove includes a proximal sidewall and a distal sidewall that are opposite each other along the extension path of the end portion. The proximal sidewall is closer to the end portion than the distal sidewall. The proximal sidewall and the inner bottom surface of the recess are connected by a smooth arc surface transition, which facilitates the introduction of the driving gas escaping from the end portion into the gas equalization groove.
[0008] Preferably, the depth of the air-regulating groove along the central axis of the cavity is greater than or equal to the depth of the flow-guiding groove along the central axis of the cavity.
[0009] Preferably, the substrate carrier further includes an exhaust pipe, which is disposed on the carrier body and communicates with the gas equalization groove.
[0010] Preferably, the gas distribution groove is provided with an internal exhaust port, and the number of the internal exhaust ports is at least 2, and all of them are connected to the exhaust pipe.
[0011] Preferably, the substrate carrier further includes an exhaust pipe disposed on the carrier body and an external exhaust port disposed on the inner bottom surface of the recess, the external exhaust port being located in the area between the end portion and the gas equalization groove, and the external exhaust port communicating with the exhaust pipe.
[0012] Preferably, the number of the air equalization grooves is at least 2, and at least 2 air equalization grooves are sequentially arranged along the extension path of the end of the guide groove.
[0013] Preferably, in adjacent gas equalization grooves, the length of the gas equalization groove near the end portion along the gas equalization groove extension direction is less than the length of the gas equalization groove away from the end portion along the gas equalization groove extension direction.
[0014] Preferably, the substrate carrier further includes an exhaust pipe disposed on the carrier body and an intervening exhaust port disposed between adjacent gas equalization grooves, the intervening exhaust port being connected to the exhaust pipe.
[0015] Preferably, the exhaust pipe extends toward the bottom of the carrier body until it penetrates through it, or the exhaust pipe extends toward the middle or edge of the carrier body to accommodate the assembled rotary drive device.
[0016] The substrate carrier with flow channels described in this application has the following beneficial effects:
[0017] Since the gas escaping from the guide groove will inevitably escape to the edge of the cavity and then escape from the cavity and the edge of the substrate, it will affect the process gas flow field above the substrate. This application utilizes a gas equalization groove that extends across the end of the flow guide groove. This allows the driving gas escaping from the end to be buffered and its diffusion range expanded by the gas equalization groove. The driving gas escaping from the end of the flow guide groove flows into the gas equalization groove at a certain flow rate, is buffered and diffused, and then escapes towards the edge of the recess. This reduces the flow rate of the driving gas, specifically the velocity of the escaping driving gas at the gap between the recess edge and the substrate, thus reducing or avoiding adverse effects on the process gas flow field above the substrate. Furthermore, after flowing through the gas equalization groove, the diffusion range of the driving gas escaping from the end is expanded, resulting in a more uniform distribution of the escaping driving gas at the gap between the recess edge and the substrate. This helps reduce or avoid the problem of impactful turbulence generated by the escaping driving gas in certain local areas at the substrate and recess edge, which significantly disrupts the process gas flow field above the substrate and negatively impacts film quality. Attached Figure Description
[0018] Figure 1 This is a schematic diagram of the cavity structure in the substrate carrier according to an embodiment of this application.
[0019] Figure 2 This is a schematic diagram of the substrate carrier in an embodiment of this application.
[0020] Figure 3 This is a schematic diagram of the structure of the substrate carrier and the substrate according to an embodiment of this application.
[0021] Figure 4 This is a schematic diagram of the structure in which the gas uniform groove is disposed in the extension path of the substrate carrier in an embodiment of this application. Figure 1 .
[0022] Figure 5 This is a schematic diagram of the structure in which the gas uniform groove is disposed in the extension path of the substrate carrier in an embodiment of this application. Figure 2 .
[0023] Figure 6 This is a schematic diagram of the structure in which the gas uniform groove is disposed in the extension path of the substrate carrier in an embodiment of this application. Figure 3 .
[0024] Figure 7 This is a schematic diagram showing the flow direction of the driving gas in the gas uniformization tank in the substrate carrier according to an embodiment of this application.
[0025] Figure 8 This is a schematic diagram of a substrate carrier having a flow channel in a recess in an embodiment of this application.
[0026] Figure 9This is a schematic diagram of a substrate carrier in an embodiment of this application, showing a plurality of flow channels provided in the recesses.
[0027] Figure 10 This is a schematic diagram of the exhaust channel structure in the substrate carrier according to an embodiment of this application. Figure 1 .
[0028] Figure 11 This is a schematic diagram of the exhaust channel structure in the substrate carrier according to an embodiment of this application. Figure 2 .
[0029] Figure 12 This is a schematic diagram of the gas uniform groove and internal exhaust port in the substrate carrier of this application embodiment.
[0030] Figure 13 This is a schematic diagram of the gas uniform groove and external exhaust port in the substrate carrier of this application embodiment.
[0031] Figure 14 This is a schematic diagram of the gas uniform groove and interstitial exhaust port in the substrate carrier of this application embodiment.
[0032] Figure 15 This is a schematic diagram of the structure of the gas uniform groove, inner exhaust port, outer exhaust port and interstitial exhaust port in the substrate carrier of this application embodiment. Detailed Implementation
[0033] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions in the embodiments of this application will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art to which this application pertains. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed following the word and its equivalents, but does not exclude other elements or objects.
[0034] To overcome the problems existing in the prior art, this application provides a substrate carrier with a flow channel, which helps to reduce or avoid the problem that the process gas flow field above the substrate is significantly disturbed due to the driving gas escaping from the flow channel generating impact turbulence in several local areas at the substrate and the edge of the cavity, which is detrimental to the film formation quality.
[0035] In some embodiments, reference is made to Figures 1 to 7The substrate carrier includes a carrier body 1, a recess 2, a flow channel 3, and a gas equalization channel 4. The carrier body 1 is provided with a driving gas input channel 5. The recess 2 is located on the bearing surface of the carrier body 1 to support the substrate 20. The flow channel 3 is located on the inner bottom surface 21 of the recess 2. The starting end 31 of the flow channel 3 is connected to the driving gas input channel 5 to allow the driving gas to flow into the flow channel 3 and drive the substrate 20 to rotate. The gas equalization channel 4 spans the extension path 33 of the end portion 32 of the flow channel 3, so that the driving gas escaping from the end portion 32 is buffered and its diffusion range is expanded by the gas equalization channel 4.
[0036] In this embodiment, since the gas escaping from the guide groove 3 will inevitably escape to the edge of the recess 2 and escape from the recess 2 and the edge of the substrate 20, it will affect the process gas flow field above the substrate. This application utilizes the gas equalization groove 4, which spans the extension path 33 of the end portion 32 of the guide groove 3. This allows the driving gas escaping from the end portion 32 to be buffered and have its diffusion range expanded by the gas equalization groove 4. The driving gas escaping from the guide groove 3 flows into the gas equalization groove 4 at a certain flow rate, is buffered and diffused, and then escapes towards the edge of the recess 2. This reduces the flow rate of the driving gas, specifically the flow rate of the escaping driving gas at the gap between the edge of the recess 2 and the substrate, thus reducing or avoiding adverse effects on the process gas flow field above the substrate. Furthermore, after the driving gas flows through the gas equalization groove 4, the diffusion range of the driving gas escaping from the end portion 32 is expanded, resulting in a more uniform distribution of the driving gas escaping at the gap between the edge of the recess 2 and the substrate. This helps to reduce or avoid the problem of impactful turbulence generated by the driving gas escaping from the guide groove in certain local areas at the substrate and the edge of the recess, which significantly disrupts the process gas flow field above the substrate and is detrimental to film formation quality.
[0037] In some embodiments, reference is made to Figures 4 to 6 A first sidewall tangent 301 and a second sidewall tangent 302 are defined, which are tangent to the end portion 32 and extend away from the end portion 32. The end portion 32 is located between the first sidewall tangent 301 and the second sidewall tangent 302. The extension path 33 is the orthographic projection of the area enclosed between the first sidewall tangent 301 and the second sidewall tangent 302 onto the bottom surface of the recess 2. The gas equalization groove 4 spans the extension path 33 of the end portion 32 of the guide groove 3, and the gas equalization groove 4 extends in two directions away from the extension path 33, thereby expanding the diffusion range of the driving gas escaping from the end portion 32.
[0038] In this embodiment, the first sidewall tangent 301 and the second sidewall tangent 302 extend in a direction away from the end portion 32, that is, the first sidewall tangent 301 and the second sidewall tangent 302 extend along the direction in which the airflow rushes out from the guide groove 3. The first sidewall tangent 301 and the second sidewall tangent 302 are the orthogonal projections of the tangents of the two sidewalls of the guide groove 3 along its extension direction, which are respectively tangent to the end face of the end portion 32, onto the bottom surface of the recess 2.
[0039] In some embodiments, reference is made to Figure 2 and Figure 3 The recess 2 is provided at least one. For example, several recesses 2 can be provided, or only one recess 2 can be provided; the specific number is set according to process requirements. In some embodiments, there are 5 recesses 2, such as... Figure 3 As shown. In other embodiments, the recess 2 has 6 recesses, such as... Figure 2 As shown.
[0040] In some embodiments, reference is made to Figure 1 and Figure 2 The guide channel 3 is further provided with an air inlet 51 at its starting end 31 near the center of the inner bottom surface 21 of the recess 2. The air inlet 51 is connected to the driving gas input channel 5 so as to deliver the driving gas into the guide channel 3.
[0041] In some embodiments, Figure 3 The substrate 20 shown can also be a substrate support, with several support recesses formed on the substrate support to support each substrate. The driving gas enters the guide groove 3 through the driving gas input channel 5 and flows along the guide groove 3 to form an air cushion that can support the substrate support. The substrate support rotates around the central axis of the inner bottom surface 21 of the recess 2 under the buoyancy of the driving gas, thereby driving each substrate to rotate synchronously.
[0042] In some embodiments, at least one flow channel 3 is provided, and the flow channel 3 is arranged in a spiral around the center of the inner bottom surface 21 of the recess 2.
[0043] The flow guide groove 3 can be provided in one or more forms, the specific number depending on the process requirements. Its shape, size, and arrangement can be selected accordingly to meet these requirements. The goal is to ensure that the driving gas entering the flow guide groove 3 at a certain rate flows within it to form an air cushion, allowing the substrate 20 above it to achieve air buoyancy and stable rotation. The specific implementation method is a conventional technique in the art. For example, in some embodiments, three flow guide grooves 3 are provided on the inner bottom surface 21 of the recess 2, such as... Figure 1 and Figure 2As shown. In other embodiments, the inner bottom surface 21 of the recess 2 is provided with one or more of the guide grooves 3, respectively as shown in the figure. Figure 8 and Figure 9 As shown.
[0044] In some embodiments, reference is made to Figure 1 , Figure 2 and Figure 9 The guide groove 3 is provided with at least two, and the starting ends 31 of the at least two guide grooves 3 are evenly distributed circumferentially with the center of the inner bottom surface 21 of the recess 2 as the center, and the ending ends 32 of the at least two guide grooves 3 are evenly distributed circumferentially with the center of the inner bottom surface 21 of the recess 2 as the center.
[0045] In some embodiments, reference is made to Figure 5 and Figure 6 The gas equalization groove 4 is arranged perpendicularly or inclined to the central axis of the extension path 33 of the end portion 32, and the gas equalization groove 4 extends toward the bottom edge of the recess 2, so that the driving gas escaping at the gap between the edge of the recess 2 and the substrate is more evenly distributed. This helps to reduce or avoid the problem that the driving gas escaping from the guide groove generates a series of impact turbulence in some local areas at the edge of the substrate and the recess, which significantly disturbs the process gas flow field above the substrate and is detrimental to the film formation quality.
[0046] In some embodiments, reference is made to Figure 1 , Figure 2 , Figure 4 , Figure 8 and Figure 9 The air distribution groove 4 is arranged within a certain arc range along the circumference of the end portion 32. Further, refer to... Figure 1 and Figure 8 The flow guide 2 also includes a flow guide section located between the starting end 31 and the corresponding ending end 32. The flow guide 3 extends from the region between the two ends of the gas equalization groove 4 into the region surrounded by the gas equalization groove 4, such that a part of the gas equalization groove 4 is located between the ending end 32 and the flow guide section adjacent to the ending end 32 in the radial direction, and a part is located between the ending end 32 and the bottom edge of the recess 2. This allows the driving gas escaping from the ending end 32 in all directions to be buffered and have its diffusion range expanded by the gas equalization groove 4, so that the driving gas escaping from the ending end 32 in all directions can be distributed more evenly. This not only helps to reduce or avoid the generation of impact turbulence in some local areas at the substrate and the edge of the recess due to the driving gas escaping from the flow guide 32, but also reduces or avoids the impact on the driving gas in the flow guide section adjacent to the ending end 32 in the radial direction.
[0047] In some embodiments, the orthographic projection of the air-distributing groove 4 onto the inner bottom surface 21 of the recess 2 is an arc-shaped structure, a rectangular structure, a trapezoidal structure, or a fan-shaped annular structure, etc. In some specific embodiments, refer to... Figure 1 , Figure 2 , Figure 4 , Figure 8 and Figure 9 The gas equalization groove 4, when projected onto the inner bottom surface 21 of the recess 2, has an arc-shaped structure, and the gas equalization groove 4 is arranged within a certain arc range along the circumference of the end portion 32. In other specific embodiments, refer to... Figure 5 The air-regulating groove 4 has a trapezoidal structure in its orthographic projection onto the inner bottom surface 21 of the recess 2, and the air-regulating groove 4 is inclined to the central axis of the extension path 33 of the end portion 32. (Reference) Figure 6 The air-equalizing groove 4 has a rectangular structure when projected onto the inner bottom surface 21 of the recess 2, and the air-equalizing groove 4 is set perpendicular to the central axis of the extension path 33 of the end portion 32.
[0048] In some embodiments, reference is made to Figures 4 to 7 The gas equalization groove 4 includes a proximal sidewall 41 and a distal sidewall 42 that are opposite each other along the extension path of the end portion 32. The proximal sidewall 41 is closer to the end portion 32 than the distal sidewall 42. The proximal sidewall 41 and the inner bottom surface 21 of the recess 2 are connected by a smooth arc surface to facilitate the introduction of the driving gas escaping from the end portion 32 into the gas equalization groove 4. This avoids sharp corners at the junction of the proximal sidewall 41 and the inner bottom surface 21, which would cause the driving gas escaping from the guide groove 3 to flow directly over the top surface of the gas equalization groove 4, which is flush with the inner bottom surface 21. The smooth arc surface connection between the proximal sidewall 41 and the inner bottom surface 21 of the recess 2 guides the driving gas, making it easier for the driving gas escaping from the end portion 32 to diffuse into the gas equalization groove 4, thereby reducing the flow rate of the driving gas and making the distribution of the driving gas escaping from the edge of the recess 2 and the gap between the substrate more uniform.
[0049] In some embodiments, the proximal sidewall 41 and the inner bottom surface 21 are connected in a continuous manner to form a continuous smooth arc surface. Specifically, the continuous connection method can be any one of tangential continuity, curvature continuity, curvature change rate continuity, or curvature change rate change rate continuity. The smooth arc surface formed by the above connection method between adjacent surfaces is beneficial for guiding the driving gas, thereby making it easier for the driving gas escaping from the guide groove 3 to diffuse into the gas equalization groove 4. Tangential continuity, curvature continuity, curvature change rate continuity, and curvature change rate change rate continuity are all common knowledge in the art and will not be elaborated here.
[0050] In some embodiments, reference is made to Figures 10 to 11The depth of the gas equalization groove 4 along the central axis 22 of the recess 2 is greater than or equal to the depth of the flow guide groove 3 along the central axis 22 of the recess 2. This allows the gas equalization groove 4 to collect gas, meaning that the driving gas escaping from the end portion 32 is stored in the gas equalization groove 4, thereby reducing the amount of driving gas escaping to the edge of the recess 2.
[0051] In some embodiments, reference is made to Figure 10 and Figure 11 The substrate carrier 1 also includes an exhaust pipe 6, which is disposed on the carrier body 1 and communicates with the gas equalization groove 4, so that the driving gas escaping from the end part 32 can be discharged through the exhaust pipe 6 after entering the gas equalization groove 4, thereby further reducing the amount of driving gas escaping to the edge of the cavity 2.
[0052] In some embodiments, reference is made to Figure 10 The exhaust pipe 6 extends toward the bottom of the carrier body 1 until it penetrates through it, which helps to reduce the flow resistance of gas discharge, increases the amount of driving gas discharged from the exhaust pipe 6, and reduces the amount of driving gas escaping to the edge of the recess 2.
[0053] In some embodiments, the exhaust pipe 6 is arranged parallel to the central axis 22 of the bottom surface of the recess 2. That is, the extending direction of the exhaust pipe 6 is parallel to the central axis 22 that is perpendicular to the inner bottom surface 21 of the recess 2.
[0054] In other embodiments, reference is made to Figure 10 The exhaust pipe 6 is inclined to the bottom surface of the recess 2 and extends towards the carrier body 1. Specifically, the inclination direction of the exhaust pipe 6 is set according to the extension direction of the extension path 33 of the end portion 32 of the guide groove 3, so that the airflow in the guide groove 3 can flow into the exhaust pipe 6 along the extension direction of the extension path 33 of the end portion 32 to reduce exhaust flow resistance. For example, in some specific embodiments, refer to Figure 1 The extension path 33 of the end portion 32 of the guide groove 3 extends toward the area where the central axis 22 is located, the exhaust pipe 6 is inclined to the bottom surface of the recess 2, and the end portion of the exhaust pipe 6 away from the inner bottom surface 21 extends toward the central axis 22. In other specific embodiments, see reference... Figure 9 When the extension path 33 of the end portion 32 of the guide groove 3 extends toward the edge of the recess 2, the exhaust pipe 6 is inclined to the bottom surface of the recess 2, and the end portion of the exhaust pipe 6 away from the inner bottom surface 21 extends toward the edge of the recess 2. This helps to reduce the gas discharge flow resistance, increases the amount of driving gas discharged from the exhaust pipe 6, and reduces the amount of driving gas escaping toward the edge of the recess 2.
[0055] In some embodiments, reference is made to Figure 11 The exhaust pipe 6 extends toward the middle or edge of the carrier body 1 to accommodate the assembled rotary drive device.
[0056] In some specific embodiments, the exhaust pipe 6 extends toward the middle or edge of the carrier body 1 until it penetrates it.
[0057] In other specific embodiments, reference is made to Figure 11 The exhaust pipe 6 includes a first exhaust pipe 61 and a second exhaust pipe 62 that are connected. The first exhaust pipe 61 is arranged parallel to or inclined to the central axis of the bottom surface of the recess 2. The second exhaust pipe 62 extends toward the middle of the carrier body 1 to be adapted to a rotary drive device arranged at the middle of the carrier body 1; or the second exhaust pipe 62 extends toward the edge of the carrier body 1 to be adapted to a rotary drive device arranged at the edge of the carrier body 1.
[0058] In some embodiments, a rotary drive device is disposed in the middle of the carrier body 1, or on the side wall of the carrier body 1. The second exhaust pipe 62 enters the rotary drive device through the junction of the rotary drive device and the carrier body 1, and extends out of the process chamber within the rotary drive device. In this case, a suction device, such as a vacuum pump, is disposed outside the process chamber to suction the opening of the radial exhaust channel outside the process chamber, allowing for flexible adjustment and control of the suction force on the driving gas. In some embodiments, refer to... Figure 3 The second exhaust pipe 62 extends toward the middle of the carrier body 1 and penetrates the inner wall 102 of the carrier body 1. In some embodiments, the second exhaust pipe 62 communicates with an exhaust pipe in the rotating shaft sleeve through an exhaust hole located in the inner wall 102. In some embodiments, refer to... Figure 3 The second exhaust pipe 62 extends toward the edge of the carrier body 1 and penetrates the outer wall 101 of the carrier body 1. The gas outlet of the second exhaust pipe 62 on the outer wall 101 is closer to the air pump, which makes the exhaust effect better.
[0059] In some embodiments, the other end of the second exhaust pipe 62 is located near the exhaust port at the bottom of the process chamber, and the driving gas is discharged by the suction force formed below the substrate carrier by the tail exhaust pipe of the process chamber. In some specific embodiments, the second exhaust pipe 62 is connected to the tail exhaust pipe through an exhaust hole located on the inner sidewall 102.
[0060] In some embodiments, reference is made to Figures 10 to 12The gas equalization groove 4 is provided with an internal exhaust port 7. The number of internal exhaust ports 7 is at least 2 and they are all connected to the exhaust pipe 6, so that the driving gas can be discharged through the internal exhaust port 7 after entering the gas equalization groove 4, thereby further reducing the amount of driving gas escaping to the edge of the recess 2.
[0061] In some embodiments, the internal exhaust port 7 is, but is not limited to, at least one of a circular structure, an arc-shaped structure, a fan-shaped structure, and a square structure. For example, in some specific embodiments, refer to... Figure 15 The internal exhaust port 7 has a circular exhaust hole structure. In other specific embodiments, see reference... Figure 12 The internal exhaust port 7 has an arc-shaped structure and is set with a certain arc along the extension direction of the uniform air groove 4.
[0062] In some embodiments, reference is made to Figure 15 Several of the internal exhaust ports 7 are located within the uniform air groove 4.
[0063] In some embodiments, reference is made to Figure 12 The gas equalization groove 4 is composed of four arc-shaped gas equalization grooves. The four arc-shaped gas equalization grooves are connected sequentially along the circumference and arranged around the end portion 32. The gas equalization groove 4 is arranged around the end portion 32 of the guide groove 3. That is, the gas equalization groove 4 is provided with several partitions 43. The partitions 43 divide the gas equalization groove 4 into several independent arc-shaped gas equalization grooves. In this way, while ensuring exhaust efficiency, it is easy to adjust the uniformity of the driving gas escaping towards the gap between the edge of the cavity 2 and the substrate by adjusting the setting of the internal exhaust port 7 in each arc-shaped gas equalization groove.
[0064] In some embodiments, reference is made to Figure 13 The substrate carrier further includes an exhaust pipe 6 disposed on the carrier body 1 and an external exhaust port 8 disposed on the inner bottom surface 21 of the recess 2. The external exhaust port 8 is located in the area between the end portion 32 and the gas equalization groove 4, and the external exhaust port 8 is connected to the exhaust pipe 6, so that the driving gas can be discharged through the external exhaust port 8 before entering the gas equalization groove 4, thereby reducing the amount of driving gas entering the gas equalization groove 4 and further reducing the amount of driving gas escaping to the edge of the recess 2.
[0065] In some embodiments, the external exhaust port 8 is, but is not limited to, at least one of a circular structure, an arc-shaped structure, a fan-shaped structure, and a square structure. For example, in some specific embodiments, refer to... Figure 13 The external exhaust port 8 has a circular exhaust hole structure. In some other embodiments, the external exhaust port 8 has an arc-shaped structure and is arranged with a certain arc around the end portion 32.
[0066] In some embodiments, the external exhaust port 8 is provided with at least one.
[0067] In some embodiments, several of the external exhaust ports 8 are located in the area between the end portion 32 and the air distribution groove 4.
[0068] In some embodiments, reference is made to Figure 14 The number of gas equalization grooves is at least 2. At least 2 gas equalization grooves 4 are arranged sequentially along the extension path 33 of the end portion 32 of the guide groove 3. Since the gas equalization grooves 4 can play the role of gas accumulation, the driving gas escaping from the end portion 32 can be stored in each of the gas equalization grooves 4, thereby further reducing the amount of driving gas escaping to the edge of the cavity.
[0069] In this embodiment, the number of the gas-distributing grooves 4 is set according to the radial area of the inner bottom surface 21 of the recess 2, the exhaust requirements, and the temperature field requirements of the substrate support. For example, in some embodiments, refer to Figure 14 The gas equalization groove 4 includes a first gas equalization groove 401 and a second gas equalization groove 402, wherein the first gas equalization groove 401 is disposed between the second gas equalization groove 402 and the end portion 32.
[0070] In some embodiments, reference is made to Figure 15 Each of the gas equalization grooves 4 is provided with at least two internal exhaust ports 7, which helps to improve exhaust efficiency, further reduce or avoid the escape of driving gas, and further reduce the amount of driving gas escaping to the edge of the cavity 2.
[0071] In this embodiment, the shapes of the plurality of gas equalization grooves 4 may be the same or different. The size and number of the internal exhaust ports 7 within the plurality of gas equalization grooves 4 may be the same or different. For example, in some specific embodiments, refer to... Figure 15 The size and number of internal exhaust ports 7 in the first gas equalization groove 401 are different from the size and number of internal exhaust ports 7 in the second gas equalization groove 402.
[0072] In some embodiments, reference is made to Figure 14 In the adjacent gas equalization grooves 4, the length of the gas equalization groove 4 near the end portion 32 along the gas equalization groove 4 extension direction is smaller than the length of the gas equalization groove 4 away from the end portion 32 along the gas equalization groove 4 extension direction. This allows for a further expansion of the diffusion range of the gas escaping from the end portion 32, thereby making the distribution of the driving gas escaping from the edge of the recess 2 and the gap between the substrate more uniform. This helps to reduce or avoid the problem of the driving gas escaping from the guide groove generating impact turbulence in several local areas at the substrate and the edge of the recess, which significantly disturbs the process gas flow field above the substrate and is detrimental to the film formation quality.
[0073] In some embodiments, reference is made to Figure 14The gas equalization groove 4 includes a first gas equalization groove 401 and a second gas equalization groove 402. The first gas equalization groove 401 is disposed between the second gas equalization groove 402 and the end portion 32, that is, the first gas equalization groove 401 is disposed close to the end portion 32, and the second gas equalization groove 402 is disposed away from the end portion 32. The length of the first gas equalization groove 401 along its extension direction is less than the length of the second gas equalization groove 402 along its extension direction. This causes the diffusion range of the driving gas escaping from the end portion 32 to expand for the first time after passing through the first gas equalization groove 401, and then expands again after passing through the longer second gas equalization groove 402. This results in a more uniform distribution of the driving gas reaching the substrate and the edge of the recess.
[0074] In some embodiments, reference is made to Figure 14 The substrate carrier 1 further includes an exhaust pipe 6 disposed on the carrier body 1, and an intervening exhaust port 9 disposed between adjacent gas equalization grooves 4. The intervening exhaust port 9 is connected to the exhaust pipe 6, which can further reduce the flow rate of the driving gas and reduce the amount of driving gas escaping to the edge of the cavity 2.
[0075] In some specific embodiments, reference is made to Figure 14 The gas equalization groove 4 includes a first gas equalization groove 401 and a second gas equalization groove 402. The first gas equalization groove 401 is disposed between the second gas equalization groove 402 and the end portion 32. The diffusion range of the driving gas escaping from the end portion 32 will be expanded by the first gas equalization groove 401, thereby reducing the flow rate of the driving gas for the first time. Then the driving gas is discharged through the intervening exhaust port 9, which reduces the flow rate of the driving gas again. Finally, the diffusion range of the driving gas will be expanded again after passing through the second gas equalization groove 402, and the flow rate of the driving gas will be reduced again. Moreover, the amount of driving gas escaping to the edge of the recess 2 can be further reduced by the first gas equalization groove 401, the intervening exhaust port 9 and the second gas equalization groove 402.
[0076] In some embodiments, the intermittent exhaust port 9 is, but is not limited to, at least one of a circular structure, an arc-shaped structure, a fan-shaped structure, and a square structure. For example, in some specific embodiments, refer to... Figure 14 The intermediate exhaust port 9 has a circular exhaust hole structure. In some other embodiments, the intermediate exhaust port 9 has an arc-shaped structure and is arranged with a certain arc around the end portion 32.
[0077] In some embodiments, the intermediate exhaust port 9 is provided with at least one.
[0078] In some embodiments, several of the inter-partial exhaust ports 9 are located in the area between adjacent air distribution grooves 4.
[0079] In some embodiments, reference is made to Figure 15 The inner bottom surface of the recess is provided with an inner exhaust port 7, an outer exhaust port 8, and an intervening exhaust port 9. The inner exhaust port 7 is disposed in the gas equalization groove 4, the outer exhaust port 8 is disposed in the area between the end portion 32 and the first gas equalization groove 401, and the intervening exhaust port 9 is disposed in the area between the first gas equalization groove 401 and the second gas equalization groove 402.
[0080] While the embodiments of this application have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of this application as set forth in the claims. Furthermore, the application described herein may have other embodiments and can be implemented or carried out in various ways.
Claims
1. A substrate carrier provided with flow guiding grooves, characterized in that, include: The carrier body has a driving gas input channel inside; A recess is provided on the bearing surface of the carrier body to support the substrate; A flow channel is provided on the inner bottom surface of the recess, and the starting end is connected to the driving gas input channel to allow the driving gas to flow into the flow channel and drive the substrate to rotate. A gas equalization groove extends across the end of the guide groove, allowing the driving gas escaping from the end to be buffered and its diffusion range expanded by the gas equalization groove.
2. The substrate carrier of claim 1, wherein, The gas equalization groove includes a proximal sidewall and a distal sidewall that are opposite each other along the extension path of the end portion. The proximal sidewall is closer to the end portion than the distal sidewall. The proximal sidewall and the inner bottom surface of the recess are connected by a smooth arc surface to facilitate the introduction of the driving gas escaping from the end portion into the gas equalization groove.
3. The substrate carrier of claim 1, wherein, The depth of the gas equalization groove along the central axis of the cavity is greater than or equal to the depth of the flow guide groove along the central axis of the cavity.
4. The substrate carrier of claim 1, wherein, It also includes an exhaust pipe, which is located on the carrier body and communicates with the gas equalization groove.
5. The substrate carrier of claim 4, wherein, The gas distribution groove is provided with an internal exhaust port, and the number of the internal exhaust ports is at least 2, and all of them are connected to the exhaust pipe.
6. The substrate carrier of claim 1, wherein, It also includes an exhaust pipe disposed on the carrier body and an external exhaust port disposed on the inner bottom surface of the recess, wherein the external exhaust port is located in the area between the end portion and the gas equalization groove, and the external exhaust port is connected to the exhaust pipe.
7. The substrate carrier of claim 1, wherein, The number of the gas equalization grooves is at least 2, and at least 2 of the gas equalization grooves are sequentially arranged along the extension path of the end of the guide groove.
8. The substrate carrier of claim 7, wherein, In adjacent gas equalization grooves, the length of the gas equalization groove near the end portion along the gas equalization groove extension direction is less than the length of the gas equalization groove away from the end portion along the gas equalization groove extension direction.
9. The substrate carrier of claim 7, wherein, It also includes an exhaust pipe disposed on the carrier body, and an intervening exhaust port disposed between adjacent gas equalization grooves, wherein the intervening exhaust port is connected to the exhaust pipe.
10. The substrate carrier of any of claims 4, 6, and 9, wherein, The exhaust pipe extends toward the bottom of the carrier body until it penetrates through it, or the exhaust pipe extends toward the middle or edge of the carrier body to accommodate the assembled rotary drive device.