Split-type high-power MOS (Metal Oxide Semiconductor) tube radiating device

Abstract

The utility model discloses a split type high-power MOS tube heat dissipation device, which comprises a plurality of heat dissipation assemblies, a lower bottom plate assembly and an upper bottom plate assembly, the plurality of heat dissipation assemblies are respectively and oppositely arranged on two sides of the lower bottom plate assembly in pairs, and the bottoms of the heat dissipation assemblies are detachably connected with the upper surface of the lower bottom plate assembly; the upper bottom plate assembly is arranged at the tops of the multiple heat dissipation assemblies, and the upper bottom plate assembly, the lower bottom plate assembly and the multiple heat dissipation assemblies define a heat dissipation air channel. The device provided by the utility model can dissipate heat to the maximum extent on the premise of meeting the requirement of a high-power load, and solves the technical problem of poor heat dissipation effect of the conventional high-power MOS tube heat dissipation device.

Description

Technical Field

[0001] This utility model relates to the field of heat dissipation device technology, specifically to a split-type high-power MOSFET heat dissipation device. Background Technology

[0002] Traditional MOSFET heat dissipation devices typically mount the MOSFETs onto a circuit board, which is then placed on a heat sink to form a heat dissipation assembly. Heat is dissipated by placing the MOSFETs in contact with the heat sink's substrate surface. However, in practical applications, high-power loads are often required, necessitating the placement of a larger number of MOSFETs on the heat sink. For example, Chinese Utility Model Patent CN106558562A discloses a "High-Power Load MOSFET Heat Dissipation Device," which allows for more MOSFETs to be installed without increasing the heat sink size by reducing the spacing between them to ensure the required power. However, this technology suffers from the problem of excessively small spacing between MOSFETs. While it meets the requirements for high-power loads, heat cannot be effectively dissipated, resulting in poor heat dissipation performance and low heat dissipation efficiency. Utility Model Content

[0003] The purpose of this invention is to overcome the shortcomings of the prior art and propose a split-type high-power MOSFET heat dissipation device that can maximize heat dissipation while meeting the requirements of high-power loads, thus solving the technical problem of poor heat dissipation effect in existing high-power MOSFET heat dissipation devices.

[0004] To achieve the above-mentioned technical objectives, the present invention adopts the following technical solution:

[0005] This utility model provides a split-type high-power MOSFET heat dissipation device, comprising:

[0006] Multiple heat dissipation components;

[0007] The lower base plate assembly has multiple heat dissipation components arranged in pairs on both sides of the lower base plate assembly, and the bottom of each heat dissipation component is detachably connected to the upper surface of the lower base plate assembly.

[0008] An upper base plate assembly is disposed on top of multiple heat dissipation components, and the upper base plate assembly, the lower base plate assembly, and the multiple heat dissipation components form a heat dissipation air duct.

[0009] In some embodiments, the heat dissipation assembly includes a first circuit board and a heat sink. The first circuit board is vertically disposed on the lower base plate assembly. The pins of the MOSFET are bent and fixed to the first circuit board so that the insulating surface of the MOSFET is in close contact with the first circuit board and the metal surface of the MOSFET is in contact with the heat sink.

[0010] In some embodiments, the heat dissipation assembly further includes an insulating plate, the two sides of which are in contact with the metal surface of the MOS transistor and the heat sink, respectively.

[0011] In some embodiments, the heat dissipation assembly further includes a temperature sensor for real-time monitoring of the temperature of the MOSFET.

[0012] In some embodiments, the bottom plate assembly includes a second circuit board and connectors, with a plurality of connectors arranged in pairs on opposite sides of the second circuit board, and the bottoms of a plurality of first circuit boards being vertically inserted into the corresponding connectors.

[0013] In some embodiments, the bottom plate assembly further includes a heat-conducting plate fixed to the second circuit board and located between the two rows of connectors, with the bottom of the heat sink in close contact with the upper surface of the heat-conducting plate.

[0014] In some embodiments, the upper base plate assembly includes a heat spreader and a pressure plate. The heat spreader is disposed on top of the plurality of heat sinks, and the pressure plate is disposed on top of the heat spreader. The space enclosed by the heat spreader, the heat conduction plate, and the sidewalls of the plurality of heat sinks forms the heat dissipation duct.

[0015] In some embodiments, the heat dissipation device further includes ventilation components, and a plurality of ventilation components are respectively connected to the heat dissipation duct.

[0016] In some embodiments, the ventilation assembly includes a first fan and a second fan, a plurality of first fans are respectively disposed between two adjacent heat dissipation assemblies, a plurality of second fans are disposed on the outside of the heat dissipation assemblies located at both ends, and the first fan, the second fan and the heat dissipation duct are connected.

[0017] In some embodiments, the ventilation assembly further includes partitions, and a plurality of partitions are disposed outside the first fan in a one-to-one correspondence with the first fan, with both ends of the partitions being connected to the lower base plate assembly.

[0018] Compared with the prior art, the beneficial effects of this utility model mainly include:

[0019] The high-power MOSFET heat dissipation device provided by this utility model, through the arrangement of multiple heat dissipation components, allows for flexible adjustment of the number of heat dissipation components according to actual power requirements, thus meeting the usage requirements of high-power loads. Furthermore, the multiple heat dissipation components are detachably connected to the lower base plate assembly, offering the advantage of convenient installation and disassembly. In addition, this utility model connects multiple heat dissipation components in series through the upper and lower base plate assemblies to form a heat dissipation channel, effectively dissipating the heat generated by each heat dissipation component. In other words, this utility model ensures the usage requirements of high-power loads by increasing the number of heat dissipation components without reducing the spacing between MOSFETs, fully guaranteeing the heat dissipation of each heat dissipation component. Simultaneously, the heat dissipation components are connected by a single heat dissipation channel without any obstructions, thus achieving a better heat dissipation effect and improving heat dissipation efficiency compared to existing technologies. Attached Figure Description

[0020] Figure 1 This is a schematic diagram of the overall structure of the heat dissipation device described in this utility model;

[0021] Figure 2 yes Figure 1 Exploded view.

[0022] Explanation of reference numerals in the attached figures:

[0023] 100. Heat dissipation assembly; 110. First circuit board; 120. Heat sink; 130. Insulating board; 140. Temperature sensor.

[0024] 200, lower base plate assembly; 210, second circuit board; 220, connector; 230, heat conduction plate; 240, base plate;

[0025] 300. Upper base plate assembly; 310. Heat spreader plate; 320. Pressure plate; 330. Thermal conductive silicone pad.

[0026] 400. Ventilation assembly; 410. First fan; 420. Second fan; 430. Partition. Detailed Implementation

[0027] To make the objectives, technical solutions, and advantages of this utility model clearer, the present utility model will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present utility model and are not intended to limit the present utility model.

[0028] To address the technical problem of low heat dissipation efficiency in existing high-power MOSFET heat dissipation devices, this invention proposes a split-type high-power MOSFET heat dissipation device that can improve heat dissipation efficiency while ensuring high-power load requirements.

[0029] Please refer to the following: Figures 1-2 As shown, this utility model relates to a split-type high-power MOSFET heat dissipation device, which includes multiple heat dissipation components 100, a lower base plate assembly 200, and an upper base plate assembly 300. The multiple heat dissipation components 100 are arranged in pairs on both sides of the lower base plate assembly 200, and the bottom of the heat dissipation component 100 is detachably connected to the upper surface of the lower base plate assembly 200 for easy disassembly and assembly. The upper base plate assembly 300 is disposed on top of the multiple heat dissipation components 100, and the upper base plate assembly 300, the lower base plate assembly 200, and the multiple heat dissipation components 100 form a heat dissipation airflow channel.

[0030] Compared with the prior art, this utility model replaces the traditional integrated high-power MOSFET heat dissipation device with a split type. Specifically, it designs multiple heat dissipation components 100, which are connected in series through a lower base plate assembly 200 and an upper base plate assembly 300. The number of heat dissipation components 100 can be flexibly increased or decreased according to load requirements to ensure high-power load requirements. On this basis, this utility model innovatively encloses multiple heat dissipation components 100, the lower base plate assembly 200 and the upper base plate assembly 300 into a relatively closed space, thus forming a heat dissipation channel, which can effectively dissipate the heat of each heat dissipation component 100 without reducing the distance between MOSFETs to install a large number of MOSFETs, thereby achieving a better heat dissipation effect.

[0031] Meanwhile, the heat dissipation component 100 and the lower base plate component 200 of this utility model are detachably connected, which has the advantage of convenient installation and disassembly, and also reduces the requirements of the overall heat dissipation device for installation accuracy.

[0032] In one embodiment, in order to better dissipate the heat in the heat dissipation duct, the present invention also includes a ventilation component 400, and multiple ventilation components 400 are respectively connected to the heat dissipation duct.

[0033] In one embodiment, the ventilation assembly 400 includes a first fan 410 and a second fan 420. A plurality of first fans 410 are respectively disposed between two adjacent heat dissipation assemblies 100, and a plurality of second fans 420 are disposed on the outside of the heat dissipation assemblies 100 located at both ends. The first fans 410, the second fans 420 and the heat dissipation duct are kept in communication.

[0034] In this embodiment, since there are 8 heat dissipation components 100, the heat dissipation air duct they form is relatively long. Therefore, the two second fans 420 arranged at the front and rear provide sufficient airflow to the heat dissipation components 100, and the first fan 410 can accelerate the airflow in the heat dissipation components 100. This avoids the problem of insufficient internal air pressure caused by the air duct being too long and the sealing being too low, which would cause the heat generated by the MOSFET to accumulate inside and not be able to be quickly discharged, thus causing the MOSFET to burn out. The heat dissipation efficiency is high.

[0035] In one embodiment, the ventilation assembly 400 further includes partitions 430, and a plurality of partitions 430 are disposed on the outside of the first fan 410 in a one-to-one correspondence with the first fan 410. The two ends of the partitions 430 are respectively connected to the lower base plate assembly 200.

[0036] In this embodiment, the partition 430 stabilizes the first fan 410 and fills the gap between multiple heat dissipation components 100, ensuring the integrity of the heat dissipation airflow.

[0037] In one embodiment, the heat dissipation assembly 100 includes a first circuit board 110 and a heat sink 120. The first circuit board 110 is vertically disposed on the lower base plate assembly 200, specifically disposed on the second circuit board 210. The pins of the MOS transistor are bent and fixed to the first circuit board 110 so that the insulating surface of the MOS transistor is in close contact with the first circuit board 110, and the metal surface of the MOS transistor is in contact with the heat sink 120.

[0038] In one embodiment, the heat dissipation assembly further includes an insulating plate 130, the two sides of which are in contact with the metal surface of the MOS transistor and the heat sink 120, respectively.

[0039] In this embodiment, the insulating plate 130 is made of ceramic material, which can prevent the risk of electric shock from touching the heat sink 120 and allows for higher operating voltages in a confined space. Simultaneously, the insulating plate 130 also has thermal conductivity to transfer the heat generated by the MOSFET to the heat sink 120.

[0040] In one embodiment, the first circuit board 110, the MOSFET, the insulating plate 130, and the heat sink 120 are connected together by bolts passing through the side of the first circuit board 110 to form a heat dissipation assembly 100.

[0041] In one embodiment, the heat dissipation assembly further includes a temperature sensor 140 for real-time monitoring of the temperature of the MOSFET.

[0042] In one embodiment, the heat dissipation device further includes a control unit, which is signal-connected to the temperature acquisition unit 140 and the first fan 410 and the second fan 420. The temperature of the MOS transistor acquired by the temperature acquisition unit 140 is fed back to the control unit, and the control unit adjusts the airflow of the first fan 410 and the second fan 420 according to the temperature, so as to reduce noise and save energy while ensuring heat dissipation effect.

[0043] In one embodiment, the lower base plate assembly 200 includes a second circuit board 210 and connectors 220. The connectors 220 are arranged in pairs on both sides of the second circuit board 210. The bottoms of the first circuit boards 110 are vertically inserted into the corresponding connectors 220, that is, the first circuit boards 110 are detachably connected to the second circuit boards 210 through the connectors 220.

[0044] In one embodiment, the lower base plate assembly 200 further includes a heat-conducting plate 230, which is fixed to the second circuit board 210 and located between the two rows of connectors 220, with the bottom of the heat sink 120 in close contact with the upper surface of the heat-conducting plate 230.

[0045] In one embodiment, the lower base plate assembly 200 further includes a base plate 240 disposed between the second circuit board 210 and the heat-conducting plate 230. The second circuit board 210, the base plate 240, and the heat-conducting plate 230 are locked together with the heat sink 120 by bolts inserted from the bottom of the second circuit board 210.

[0046] In one embodiment, the upper base plate assembly 300 includes a heat spreader 310 and a pressure plate 320. The heat spreader 310 is disposed on top of the plurality of heat sinks 120, and the pressure plate 320 is disposed on top of the heat spreader 310. The space enclosed by the heat spreader 310, the heat conduction plate 230 and the side walls of the plurality of heat sinks 120 forms the heat dissipation duct.

[0047] In one embodiment, in order to solve the problem of heat accumulation in existing integrated heat sinks where the front is cold and the back is hot, and the heat generated by the MOSFET cannot be quickly and effectively dissipated, this embodiment uses a heat spreader 310 to connect multiple heat dissipation components 100 in series. This can accelerate the heat conduction between high and low temperature parts, make the temperature of the entire heat sink 120 more uniform, keep the temperature rise of the MOSFET the same, and maximize the utilization of the heat sink 120 itself to achieve a better heat dissipation effect.

[0048] In one embodiment, the upper base plate assembly 300 further includes a thermally conductive silicone pad 330, which is attached above the heat sink 120. The heat spreader 310 transitions to the heat sink 120 through the thermally conductive silicone pad 330. The pressure plate 320 presses the heat spreader 310 and the thermally conductive silicone pad 330 onto the heat sink 120 with screws. The thermally conductive silicone pad 330 is compressible and can fill the gap between the heat spreader 310 and the heat sink 120, making the contact tighter and the heat conduction effect better.

[0049] In summary, this utility model provides a MOSFET heat dissipation device that can meet the requirements of high power loads, has good heat dissipation effect, is easy to disassemble and assemble, has low heat dissipation cost, high long-term reliability of MOSFET operation, and high power density.

[0050] The specific embodiments of this utility model described above do not constitute a limitation on the scope of protection of this utility model. Any other corresponding changes and modifications made based on the technical concept of this utility model should be included within the scope of protection of the claims of this utility model.

Claims

1. A split high-power MOSFET heat sink, characterized in that, include: Multiple heat dissipation components; The lower base plate assembly has multiple heat dissipation components arranged in pairs on both sides of the lower base plate assembly, and the bottom of each heat dissipation component is detachably connected to the upper surface of the lower base plate assembly. An upper base plate assembly is disposed on top of multiple heat dissipation components, and the upper base plate assembly, the lower base plate assembly, and the multiple heat dissipation components form a heat dissipation air duct.

2. The split high power MOSFET heat sink device of claim 1, wherein, The heat dissipation assembly includes a first circuit board and a heat sink. The first circuit board is vertically disposed on the lower base plate assembly. The pins of the MOSFET are bent and fixed to the first circuit board so that the insulating surface of the MOSFET is in close contact with the first circuit board and the metal surface of the MOSFET is in contact with the heat sink.

3. The split high power MOSFET heat sink of claim 2, wherein, The heat dissipation assembly also includes an insulating plate, the two sides of which are in contact with the metal surface of the MOS transistor and the heat sink, respectively.

4. The split high power MOSFET heat sink of claim 3, wherein, The heat dissipation assembly also includes a temperature sensor for real-time monitoring of the temperature of the MOSFET.

5. The split high power MOSFET heat sink of claim 2, wherein, The lower base plate assembly includes a second circuit board and connectors. Multiple connectors are arranged in pairs on both sides of the second circuit board, and the bottom of multiple first circuit boards is perpendicularly inserted into the corresponding connectors.

6. The split high power MOSFET heat sink device of claim 5, wherein, The lower base plate assembly also includes a heat-conducting plate, which is fixed to the second circuit board and located between the two rows of connectors. The bottom of the heat sink is in close contact with the upper surface of the heat-conducting plate.

7. The split high power MOSFET heat sink of claim 6, wherein, The upper base plate assembly includes a heat spreader and a pressure plate. The heat spreader is disposed on top of the plurality of heat sinks, and the pressure plate is disposed on top of the heat spreader. The space enclosed by the heat spreader, the heat conduction plate, and the side walls of the plurality of heat sinks forms the heat dissipation duct.

8. The split high power MOSFET heat sink of claim 1, wherein, It also includes ventilation components, and multiple ventilation components are respectively connected to the heat dissipation duct.

9. The split high power MOSFET heat sink of claim 8, wherein, The ventilation assembly includes a first fan and a second fan. A plurality of first fans are respectively disposed between two adjacent heat dissipation assemblies, and a plurality of second fans are disposed on the outside of the heat dissipation assemblies located at both ends. The first fans, the second fans and the heat dissipation duct are connected.

10. The split high power MOSFET heat sink of claim 9, wherein, The ventilation assembly also includes partitions, and a plurality of partitions are disposed outside the first fan in a one-to-one correspondence with the first fan. The two ends of the partitions are respectively connected to the lower base plate assembly.

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