Diamond-based heat sink device

Abstract

The utility model discloses a diamond-based heat sink device which comprises a diamond-based composite layer and two composite electrode layers. The diamond-based composite layer comprises a diamond layer, the two composite electrode layers are connected with the diamond layer in a spaced mode and used for being connected with different conductive ends of a component to be cooled, the embedding depth of the two composite electrode layers in the diamond layer is a first preset depth, and the embedding depth of the two composite electrode layers in the component to be cooled is a second preset depth. The distance between the to-be-cooled component and the opposite surface of the diamond-based composite layer reaches a preset distance; the contact surfaces of the two composite electrode layers and the diamond layer account for 0.1-0.3 of the surface of the diamond layer; the first preset depth, the second preset depth and the preset distance are all larger than or equal to 0 and smaller than or equal to the thickness of the composite electrode layer. The diamond-based heat sink device provided by the utility model can rapidly dissipate heat of the components to be dissipated so as to realize safe and lasting work, and can adapt to different layout requirements of the components to be dissipated.

Description

Technical Field

[0001] This utility model relates to the field of heat dissipation in semiconductor devices, and more particularly to diamond-based heat sink devices. Background Technology

[0002] Light-emitting diodes (LEDs) convert electrical energy into light energy, but in doing so, they also generate a significant amount of heat. This is especially true for high-power LED devices, which generate even more heat per unit area during operation. Therefore, how to quickly and effectively dissipate heat from LED devices is a pressing issue that needs to be addressed.

[0003] In existing technologies, LEDs are typically cooled by contacting multiple layers of metal plates, with heat transfer occurring through these plates. While these metal layers offer high heat dissipation efficiency, they require insulation to prevent leakage. However, the presence of this insulation material can negatively impact the heat dissipation effect of the multi-layered metal plates on the LEDs. Current methods also involve fixed positions for the LEDs and multi-layered metal plates, relying on contact cooling, resulting in a simplistic design. Utility Model Content

[0004] In view of this, the present invention proposes a diamond-based heat sink device, which aims to solve at least one of the above-mentioned technical problems and achieve rapid and effective heat dissipation, safe heat dissipation, and flexible arrangement.

[0005] The diamond-based heat sink device proposed in this utility model includes: a diamond-based composite layer comprising a diamond layer; two composite electrode layers, the two composite electrode layers being spaced apart from the diamond layer, and the two composite electrode layers being respectively used to connect different conductive terminals of a component to be cooled; the embedment depth of the two composite electrode layers in the diamond layer is a first preset depth, and the embedment depth of the two composite electrode layers in the component to be cooled is a second preset depth, so that the distance between the component to be cooled and the relative surfaces of the diamond-based composite layer reaches a preset distance; the contact surface between the two composite electrode layers and the diamond layer occupies 0.1~0.3 of the surface area of ​​the diamond layer; the first preset depth is greater than or equal to 0 and less than or equal to the thickness of the composite electrode layer, the second preset depth is greater than or equal to 0 and less than or equal to the thickness of the composite electrode layer, and the preset distance is greater than or equal to 0 and less than or equal to the thickness of the composite electrode layer.

[0006] As can be seen from the above technical solution, in the diamond-based heat sink device proposed in this utility model, the contact surface between the two composite electrode layers and the diamond layer occupies 0.1~0.3 of the diamond layer surface. This ensures that the composite electrode layer quickly transfers the heat from the component to be cooled to the diamond layer 11, achieving a stable connection and effective support for the component. On the one hand, when the preset distance is greater than 0, by connecting the component to be cooled and the diamond-based composite layer with the composite electrode layer, not only can the component be switched on and off, but the heat generated by the component can also be conducted through the composite electrode layer and enter the diamond-based composite layer. The diamond-based composite layer then quickly transfers the heat outward, thereby achieving rapid heat dissipation of the component. On the other hand, when the preset distance is equal to 0, at least a portion of the diamond-based composite layer is in direct contact with the surface of the component, thereby achieving large-area rapid heat conduction, which is beneficial for achieving efficient heat dissipation. Since the composite electrode layer of this utility model contains a diamond layer, which has insulating properties and excellent thermal conductivity, the component to be cooled can also achieve safe heat dissipation during operation. The diamond-based heat sink device of this invention has a variety of structures and can be flexibly adjusted according to the different arrangement requirements of the components to be cooled, so as to meet the heat dissipation requirements of different electronic devices.

[0007] In some embodiments, the first preset depth is equal to the thickness of the composite electrode layer, the second preset depth is equal to 0, and the preset distance is equal to 0; or, the first preset depth is equal to 0, the second preset depth is equal to the thickness of the composite electrode layer, and the preset distance is equal to 0; or, the sum of the first preset depth and the second preset depth is equal to the thickness of the composite electrode layer, and the preset distance is equal to 0; or, the two composite electrode layers and the heat-dissipating component are respectively connected at different positions on the diamond layer, and the first preset depth is greater than or equal to 0, the second preset depth is equal to 0, and the preset distance is equal to 0; or, when the preset distance is greater than 0, thermal grease is filled between the diamond layer and the heat-dissipating component.

[0008] Advantageously, when the preset distance is equal to 0, the contact area between the heat-dissipating component and the diamond layer accounts for 0.1% to 90% of the heat dissipation area of ​​the diamond layer.

[0009] In some embodiments, the composite electrode layer includes: a first buffer layer having a first surface and a second surface disposed opposite to each other, the first surface being in contact with the diamond layer; a conductive layer disposed on the second surface; a metal protective layer disposed on the side of the conductive layer away from the first buffer layer; a positive electrode layer and a negative electrode layer, the positive electrode layer or the negative electrode layer being disposed on the side of the metal protective layer away from the conductive layer, the positive electrode layer or the negative electrode layer being connected to the conductive terminal of the component to be cooled.

[0010] Optionally, the first buffer layer is selected from one or more of Ti, Mo, W, Ta, Si, titanium carbide, molybdenum carbide, tungsten carbide, tantalum carbide, and silicon carbide; and / or, the conductive layer is copper or a copper-based composite material; and / or, the metal protective layer is gold or a gold-based composite material; and / or, the positive electrode layer and the negative electrode layer are gold or gold alloys, wherein the gold content is greater than or equal to 90% by mass. Optionally, the thickness of the first buffer layer is 0.1 μm to 2 μm; and / or, the thickness of the conductive layer is 1 μm to 50 μm; and / or, the thickness of the metal protective layer is 10 nm to 500 nm; and / or, the distance between the two farthest ends of the cross-sections of the positive electrode layer and the negative electrode layer is 0.50 mm to 3 mm.

[0011] In some embodiments, the diamond-based composite layer further includes: a second buffer layer disposed on the side of the diamond layer away from the composite electrode layer; and a metal substrate disposed on the side of the second buffer layer away from the diamond layer.

[0012] Optionally, the second buffer layer is selected from one or more of Ti, Mo, W, Ta, Si, titanium carbide, molybdenum carbide, tungsten carbide, tantalum carbide, and silicon carbide; and / or, the metal substrate is copper or a copper-based composite material; and / or, the melting point of the metal substrate is greater than or equal to 700°C. Optionally, the thickness of the metal substrate is 0.5 mm to 5 mm; and / or, the thickness of the second buffer layer is 0.1 μm to 10 μm; and / or, the thickness of the diamond layer can be 0.1 μm to 50 μm.

[0013] Optionally, the component to be cooled has a heat-conducting surface facing the diamond layer and an arrangement surface away from the diamond layer; two composite electrode layers are connected between the heat-conducting surface of the component to be cooled and the diamond layer, and the sides of the two composite electrode layers away from the diamond layer are respectively connected to the heat-conducting surface at intervals; or, one of the composite electrode layers is connected between the heat-conducting surface of the component to be cooled and the diamond layer, and the composite electrode layer is connected to a conductive end on the heat-conducting surface; the orthographic projection of the other composite electrode layer on the diamond layer is located outside the orthographic projection of the component to be cooled on the diamond layer, and the side of the other composite electrode layer away from the diamond layer is connected to a conductive end on the arrangement surface; or, the orthographic projections of both composite electrode layers on the diamond layer are both located outside the orthographic projection of the component to be cooled on the diamond layer, and the sides of both composite electrode layers away from the diamond layer are connected to different conductive ends on the arrangement surface.

[0014] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and do not limit the disclosure of the embodiments of this utility model. Attached Figure Description

[0015] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are some embodiments of this utility model. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0016] Figure 1 This is a schematic diagram of the connection between a diamond-based heat sink device and a component to be cooled, as proposed in some embodiments of this utility model, wherein the first preset depth is equal to 0, the second preset depth is equal to 0, and the preset distance is equal to the thickness of the composite electrode layer 20.

[0017] Figure 2 This is a schematic diagram of the connection between a diamond-based heat sink device and a component to be cooled, as proposed in some embodiments of this utility model. The first preset depth is greater than 0, the second preset depth is equal to 0, and the preset distance is less than the thickness of the composite electrode layer 20 and greater than 0.

[0018] Figure 3 This is a schematic diagram of the connection between a diamond-based heat sink device and a component to be cooled, as proposed in some embodiments of this utility model. The first preset depth is greater than 0, the second preset depth is equal to 0, and the preset distance is less than the thickness of the composite electrode layer 20 and greater than 0.

[0019] Figure 4This is a schematic diagram of the connection between a diamond-based heat sink device and a component to be cooled, as proposed in some embodiments of this utility model. The first preset depth is equal to the thickness of the composite electrode layer, the second preset depth is equal to 0, and the preset distance is equal to 0.

[0020] Figure 5 This is a schematic diagram of the connection between a diamond-based heat sink device and a component to be cooled, as proposed in some embodiments of this utility model. The first preset depth is equal to 0, the second preset depth is greater than 0, and the preset distance is less than the thickness of the composite electrode layer 20 and greater than 0.

[0021] Figure 6 This is a schematic diagram of the connection between a diamond-based heat sink device and a component to be cooled, as proposed in some embodiments of this utility model. The first preset depth is greater than 0, the second preset depth is greater than 0, and the preset distance is less than the thickness of the composite electrode layer 20 and greater than 0.

[0022] Figure 7 This is a schematic diagram of the connection between a diamond-based heat sink device and a component to be cooled, as proposed in some embodiments of this utility model. The first preset depth is greater than 0, the second preset depth is greater than 0, the sum of the first preset distance and the second preset distance is equal to the thickness of the composite electrode layer 20, and the preset distance is equal to 0.

[0023] Figure 8 This is a schematic diagram of the connection between a diamond-based heat sink device and a component to be cooled, as proposed in some embodiments of this utility model. The first preset depth is equal to 0, the second preset depth is equal to the thickness of the composite electrode layer 20, and the preset distance is equal to 0.

[0024] Figure 9 This is a schematic diagram of the connection between a diamond-based heat sink device and a component to be cooled, as proposed in some embodiments of this utility model, wherein the preset distance is greater than 0, and thermal grease is filled between the diamond layer and the component to be cooled.

[0025] Figure 10 This is a schematic diagram of the structure of a diamond-based heat sink device and a component to be cooled, as proposed in some embodiments of this utility model. One composite electrode layer is connected between the heat-conducting surface of the component to be cooled and the diamond layer, and the other composite electrode layer is connected between the diamond layer and the arrangement surface of the component to be cooled.

[0026] Figure 11 This is a schematic diagram of the connection between a diamond-based heat sink device and a component to be cooled, as proposed in some embodiments of this utility model. The orthographic projections of the two composite electrode layers on the diamond layer are both located outside the orthographic projection of the component to be cooled on the diamond layer. The two composite electrode layers are connected to different conductive ends on the arrangement surface of the component to be cooled.

[0027] Figure 12This is a schematic diagram of the fabrication process of a diamond-based heat sink device proposed in some embodiments of this utility model.

[0028] Explanation of reference numerals in the attached figures:

[0029] 100. Diamond-based heat sink devices;

[0030] 10. Diamond-based composite layer;

[0031] 11. Diamond layer; 12. Second buffer layer; 13. Metal substrate;

[0032] 20. Composite electrode layer;

[0033] 21. First buffer layer; 211. First surface; 212. Second surface;

[0034] 22. Conductive layer; 23. Metal protective layer; 24. Positive electrode layer; 25. Negative electrode layer;

[0035] 30. Thermal grease;

[0036] 200. Components to be cooled; 201. Thermally conductive surface; 202. Layout surface. Detailed Implementation

[0037] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, not all embodiments. Other embodiments obtained by those skilled in the art based on the embodiments of the present utility model without creative effort are all within the protection scope of the present utility model.

[0038] Where there is no conflict, the following embodiments and features can be combined with each other.

[0039] like Figures 1 to 11 As shown, an embodiment of this utility model proposes a diamond-based heat sink device 100, comprising: a diamond-based composite layer 10 and two composite electrode layers 20.

[0040] The diamond-based composite layer 10 includes a diamond layer 11. This diamond layer 11 possesses good insulation properties, effectively preventing leakage during heat dissipation. It also exhibits excellent thermal conductivity, facilitating rapid heat conduction and providing a reliable heat dissipation foundation. Furthermore, the diamond layer 11 possesses high mechanical strength, providing stable support.

[0041] Furthermore, two composite electrode layers 20 are spaced apart and connected to the diamond layer 11, and the two composite electrode layers 20 are respectively used to connect to different conductive terminals of the component to be cooled 200, so that the two composite electrode layers 20 can be connected to the positive and negative conductive terminals of the component to be cooled 200 respectively; the spaced two composite electrode layers 20 can also effectively prevent current fluctuations between them, ensuring that the component to be cooled 200 can work safely during the heat dissipation process, extending the service life of the component to be cooled 200, and improving the working efficiency of the component to be cooled 200. The contact surface between the two composite electrode layers 20 and the diamond layer 11 occupies 0.1~0.3 of the surface of the diamond layer 11, ensuring stable conductivity and heat conduction, and ensuring the light output area of ​​the LED chip; the composite electrode layers 20 quickly conduct the heat of the component to be cooled 200 to the diamond layer 11, also achieving stable connection and effective support for the component to be cooled 200.

[0042] Furthermore, the embedding depth of the two composite electrode layers 20 in the diamond layer 11 is a first preset depth, and the embedding depth of the two composite electrode layers 20 in the heat-dissipating component 200 is a second preset depth, so that the distance between the opposing surfaces of the heat-dissipating component 200 and the diamond-based composite layer 10 reaches a preset distance; the first preset depth is greater than or equal to 0 and less than or equal to the thickness of the composite electrode layer 20, the second preset depth is greater than or equal to 0 and less than or equal to the thickness of the composite electrode layer 20, and the preset distance is greater than or equal to 0 and less than or equal to the thickness of the composite electrode layer 20. That is, when the first preset depth is equal to 0, the opposing surfaces of the composite electrode layer 20 and the diamond layer 11 are only in contact, and the composite electrode layer 20 is not embedded in the diamond layer 11; when the second preset depth is equal to 0, the opposing surfaces of the composite electrode layer 20 and the heat-dissipating component 200 are only in contact, and the composite electrode layer 20 is not embedded in the heat-dissipating component 200; when the preset distance is equal to 0, at least a portion of the surfaces between the heat-dissipating component 200 and the diamond-based composite layer 10 are in complete contact.

[0043] As can be seen from the above technical solution, the diamond-based heat sink device 100 proposed in this utility model, on the one hand, when the preset distance is greater than 0, by connecting the heat-dissipating component 200 and the diamond-based composite layer 10 with the composite electrode layer 20, not only can the heat-dissipating component 200 achieve its on / off switching and normal operation, but also the heat generated by the heat-dissipating component 200 can be conducted through the composite electrode layer 20 and enter the diamond-based composite layer 10, whereby the diamond-based composite layer 10 rapidly transfers the heat outward, thereby achieving rapid heat dissipation of the heat-dissipating component 200. On the other hand, when the preset distance is equal to 0, at least a portion of the diamond-based composite layer 10 is in direct contact with the heat-dissipating component 200, thereby achieving large-area rapid heat conduction, which is beneficial for achieving efficient heat dissipation.

[0044] Because the composite electrode layer 20 of this invention contains a diamond layer 11, which possesses both insulating properties and excellent thermal conductivity, the heat sink device 200 can achieve safe heat dissipation during operation. The diamond-based heat sink device 100 of this invention has diverse structures, which can be flexibly adjusted according to the arrangement space and structure of different heat sink devices 200, meeting the heat dissipation requirements of different electronic devices, providing excellent heat dissipation performance for the heat sink device 200, and ensuring its continuous and safe operation.

[0045] Understandably, compared to the leakage phenomenon that may occur when LEDs contact heat dissipation with multi-layer metal plates in the prior art, as well as the poor heat dissipation effect and simple layout structure caused by adding insulating material to cover multi-layer metal plates, the diamond-based heat sink device 100 of this utility model can not only achieve excellent heat conduction and heat dissipation performance, but also enable the component 200 to be dissipated to work continuously and safely. It can also have a variety of connection structures and layout structures, making it widely applicable.

[0046] It should be noted that the heat-dissipating component 200 of this utility model can be an LED chip or other electronic components, and can be adjusted according to actual needs. The following explanation takes the heat dissipation of the LED chip as an example when the heat-dissipating component 200 is an LED chip.

[0047] In some embodiments of this utility model, such as Figure 4 As shown, the first preset depth is equal to the thickness of the composite electrode layer 20, the second preset depth is equal to 0, and the preset distance is equal to 0. In these examples, the composite electrode layer 20 is entirely embedded in the diamond layer 11, and the side of the composite electrode layer 20 connected to the heat-dissipating component 200 is flush with the surface of the diamond layer 11. Thus, when the heat-dissipating component 200 is electrically connected to the composite electrode layer 20, the diamond layer 11 contacts the heat-conducting surface 201 of the heat-dissipating component 200. This allows the diamond layer 11 to not only form heat transfer with the composite electrode layer 20 on multiple surfaces, but also to form a large-area contact with the heat-dissipating component 200. This enables the diamond layer 11 to directly conduct heat and provide stable support to the heat-dissipating component 200, achieving reliable arrangement and effective heat dissipation of the heat-dissipating component 200, and ensuring the continuous and stable operation of the heat-dissipating component 200.

[0048] Advantageously, such as Figure 7As shown, the first preset depth is greater than 0, the second preset depth is greater than 0, and the sum of the first preset depth and the second preset depth is equal to the thickness of the composite electrode layer 20. The preset distance is equal to 0. In these examples, part of the composite electrode layer 20 is embedded in the diamond layer 11, and the remaining part of the composite electrode layer 20 is embedded in the heat-dissipating component 200. This reduces the depth of the composite electrode layer 20 extending into the diamond layer 11, but increases the interaction surface between the composite electrode layer 20 and the heat-dissipating component 200, effectively improving the electrical connection stability between the composite electrode layer 20 and the heat-dissipating component 200. At the same time, the diamond layer 11 also forms contact with the heat-dissipating component 200, providing support for the heat-dissipating component 200 and increasing the heat dissipation efficiency.

[0049] Advantageously, such as Figure 8 As shown, the first preset depth is equal to 0, the second preset depth is equal to the thickness of the composite electrode layer 20, and the preset distance is equal to 0. In these examples, the composite electrode layer 20 is in direct contact with the upper surface of the diamond layer 11 but is not embedded in the diamond layer 11. Instead, the composite electrode layer 20 is completely embedded in the heat-dissipating component 200, thereby ensuring a stable electrical connection between the composite electrode layer 20 and the heat-dissipating component 200, preventing leakage of the composite electrode layer 20, and increasing the contact area between the composite electrode layer 20 and the heat-dissipating component 200. The diamond layer 11 also provides support and contact heat dissipation for the heat-dissipating component 200, improving the overall heat dissipation efficiency of the heat-dissipating component 200.

[0050] Advantageously, such as Figure 9 As shown, when the preset distance is greater than 0, thermal grease 30 is filled between the diamond layer 11 and the component to be cooled 200. Thermal grease 30 is easy to add, has good temperature resistance, and stable performance. Adding thermal grease 30 increases the thermal conductivity area between the component to be cooled 200 (LED chip) and the diamond layer 11, effectively insulating the composite electrode layer 20 to prevent leakage, and also improving the heat dissipation and insulation effect of the component to be cooled 200. It should be noted that the thermal grease 30 of this invention can be filled into the gap between the two layers in any embodiment where the preset distance is greater than 0, to increase thermal conductivity and improve insulation protection.

[0051] Advantageously, such as Figure 11As shown, two composite electrode layers 20 and the heat-dissipating component 200 are respectively and spacedly connected to different positions of the diamond layer 11, and the first preset depth is greater than or equal to 0 and less than the thickness of the composite electrode layer 20, the second preset depth is equal to 0, and the preset distance is equal to 0. Then in these examples, the two composite electrode layers 20 can be only provided on the surface of the diamond layer 11 or partially embedded in the diamond layer 11; the other ends of the two composite electrode layers 20 are directly connected to the layout surface 202 of the heat-dissipating component 200; the heat-dissipating component 200 is in close contact with the diamond layer 11 to form a contact surface with a large area, facilitating the diamond layer 11 to dissipate heat from the heat-dissipating component 200 efficiently; the diamond layer 11 also provides support and insulation for the heat-dissipating component 200, enabling the heat-dissipating component 200 to work stably for a long time.

[0052] Advantageously, when the preset distance is equal to 0, the contact area between the heat-dissipating component 200 and the diamond layer 11 accounts for 0.1% - 90% of the heat dissipation area of the diamond layer 11. Within the above range, the integration degree of the heat-dissipating component 200 is high, the cost of the diamond layer 11 is controllable, and the heat dissipation effect of the diamond layer 11 on the heat-dissipating component 200 is remarkable.

[0053] In some embodiments of the present utility model, as Figures 1 to 11 shown, the composite electrode layer 20 includes: a first buffer layer 21, a conductive layer 22, a metal protective layer 23, a positive electrode layer 24 or a negative electrode layer 25.

[0054] Among them, the first buffer layer 21 has a first surface 211 and a second surface 212 arranged oppositely. The first surface 211 is in contact with the diamond layer 11, the conductive layer 22 is provided on the second surface 212, the metal protective layer 23 is provided on the side of the conductive layer 22 away from the first buffer layer 21, and the positive electrode layer 24 or the negative electrode layer 25 is provided on the surface of the metal protective layer 23 away from the conductive layer 22, and the positive electrode layer 24 or the negative electrode layer 25 is connected to the conductive end of the heat-dissipating component 200. In these examples, the first buffer layer 21 can be connected to the diamond layer 11 and provide certain heat conduction buffering performance with a small thermal resistance. The conductive layer 22 can conduct electricity effectively, enabling the composite electrode layer 20 to conduct current to the heat-dissipating component 200. The metal protective layer 23 can protect the conductive layer 22, prevent the conductive layer 22 from being oxidized, and effectively reduce the aging degree of the conductive layer 22. The positive electrode layer 24 and the negative electrode layer 25 can be respectively connected to the positive conductive end and the negative conductive end of the heat-dissipating component 200, thus forming an electric conduction loop.

[0055] Optionally, the first buffer layer 21 is selected from one or more of Ti, Mo, W, Ta, Si, titanium carbide, molybdenum carbide, tungsten carbide, tantalum carbide, and silicon carbide. The thermal conductivities of these materials are all greater than 20 W / mK, and the thermal expansion coefficients are all less than 9×10 -6 / K, the interfacial thermal stress between it and the diamond layer 11 is small, the heat transfer is uniform, and the heat transfer effect is good, so that the heat generated from the heat-dissipating component 200 can be quickly transferred from the composite electrode layer 20 to the diamond layer 11, and then the entire diamond-based composite layer 10 can further transfer the heat, enabling the heat generated by the heat-dissipating component 200 to be quickly conducted out, thus extending the service life.

[0056] Optionally, the conductive layer 22 is copper or a copper-based composite material. In these examples, both copper and copper-based composite materials can achieve excellent electrical conductivity while having good heat conduction, which is beneficial for the composite electrode layer 20 to effectively conduct heat when exerting its power transmission ability. Advantageously, the copper content in the Cu-based composite material is higher than 50%, and the thermal conductivity is higher than 250 W / mk, so as to ensure that the conductive layer 22 can conduct current and also achieve good heat conduction.

[0057] Optionally, the metal protection layer 23 is gold or a gold-based composite material. Gold has extremely stable properties and is not easily oxidized, which can effectively protect the conductive layer 22 and prevent the conductive layer 22 containing copper from being oxidized or corroded. Ensure the stable interfacial performance between the conductive layer 22 and the metal protection layer 23. The metal protection layer 23 made of gold or a gold-based composite material can also achieve good heat conduction and electrical property conduction, so that the heat transmitted from the positive electrode layer 24 or the negative electrode layer 25 can be quickly transferred to the conductive layer 22, the first buffer layer 21 and enter the diamond-based composite layer 10; it can also enable the current transmitted from the positive electrode layer 24 or the negative electrode layer 25 to be effectively transmitted, realizing the normal operation of the heat-dissipating component 200.

[0058] Optionally, the positive electrode layer 24 and the negative electrode layer 25 are gold or an alloy of gold, with the mass content of gold being greater than or equal to 90%. The positive electrode layer 24 and the negative electrode layer 25 made of gold or an alloy of gold have stable properties and are not easily oxidized, and can also achieve good heat conduction and current conduction. In addition, gold or an alloy of gold has good ductility, which is convenient for making the positive electrode layer 24 and the negative electrode layer 25 into different shapes to achieve different connection forms between the composite electrode layer 20 and the heat-dissipating component 200. Advantageously, when an alloy of gold is selected, ensure that the gold content is above 90% so that the properties of gold in the alloy can be prominent.

[0059] Optionally, the thickness of the first buffer layer 21 is 0.1 μm to 2 μm. If the first buffer layer 21 is too thin (less than 0.1 μm), it will be difficult to form a good contact with the diamond layer 11, resulting in reduced adhesion; if the first buffer layer 21 is too thick (more than 2 μm), it will result in excessive thermal resistance, increased cost, and increased stress. Therefore, limiting the thickness of the first buffer layer 21 to 0.1 μm to 2 μm not only facilitates processing, keeps costs under control, and ensures reasonable thermal stress, but also allows the first buffer layer 21 to form a good contact with the diamond layer 11 and achieves greater adhesion. Furthermore, controlling the thickness of the first buffer layer 21 to 0.2 μm to 1 μm is even more conducive to achieving the aforementioned performance.

[0060] Optionally, the thickness of the conductive layer 22 is 1 μm to 50 μm. If the conductive layer 22 is too thin, its conductivity is poor, easily leading to the risk of open circuits; if the conductive layer 22 is too thick, cost and stress increase. Therefore, limiting the thickness of the conductive layer 22 to 1 μm to 50 μm not only ensures good conductivity, reasonable cost control, and good stress control, but also ensures that the circuit always remains open and effectively prevents open circuits. Furthermore, controlling the thickness of the conductive layer 22 to 5 μm to 30 μm is even more conducive to achieving the aforementioned performance.

[0061] Optionally, the thickness of the metal protective layer 23 is 10 nm to 500 nm. If the thickness of the metal protective layer 23 is too thin, it will not be sufficient to protect the conductive layer 22; if the thickness of the metal protective layer 23 is too thick, the cost will increase. Therefore, limiting the thickness of the metal protective layer 23 to 10 nm to 500 nm not only provides reliable protection for the conductive layer 22, but also keeps the cost within a reasonable range. Furthermore, controlling the thickness of the metal protective layer 23 to 50 nm is more conducive to achieving the aforementioned performance.

[0062] Optionally, the distance between the two farthest ends of the cross-sections of the positive electrode layer 24 and the negative electrode layer 25 is 0.50 mm to 3 mm. That is, the positive electrode layer 24 and the negative electrode layer 25 need to have a certain cross-sectional size. If the cross-sectional size is too large, the manufacturing cost is high; if the cross-sectional size is too small, the probability of melting at high temperatures when high current passes through is easily increased. Therefore, controlling the cross-sectional size of the positive electrode layer 24 and the negative electrode layer 25 within the above range ensures that they do not melt at high temperatures while maintaining a reasonable manufacturing cost.

[0063] In some embodiments, such as Figures 1 to 11 As shown in the various embodiments, the diamond-based composite layer 10 further includes a second buffer layer 12 and a metal substrate 13.

[0064] The second buffer layer 12 is disposed on the side of the diamond layer 11 away from the composite electrode layer 20. The metal substrate 13 is disposed on the side of the second buffer layer 12 away from the diamond layer 11. The second buffer layer 12 can further transfer the heat absorbed by the diamond layer 11 and guide it to the metal substrate 13, making the heat easier to disperse. This allows the heat absorbed by the diamond-based composite layer 10 to be uniformly transferred and quickly dissipated to the surrounding environment, improving heat dissipation efficiency.

[0065] Optionally, the second buffer layer 12 is selected from one or more of Ti, Mo, W, Ta, Si, titanium carbide, molybdenum carbide, tungsten carbide, tantalum carbide, and silicon carbide. These materials all have thermal conductivity greater than 20 W / mK and coefficients of thermal expansion less than 9 × 10⁻⁶. -6 The interface thermal stress between the diamond layer 11 and the diamond layer 12 is small, resulting in uniform and good heat transfer. This allows the heat absorbed by the diamond layer 11 to be quickly transferred to the second buffer layer 12, and then further transferred to the metal substrate 13 by the second buffer layer 12. Ultimately, the heat generated by the heat-dissipating component 200 can be quickly heat-sinked through the multi-layer structure and conducted to the environment around the diamond-based composite layer 10, extending the service life of the heat-dissipating component 200 under high-temperature operation.

[0066] Advantageously, the second buffer layer 12 is a multilayer composite structure. For example, the multilayer composite structure can be a multilayer composite structure composed of alternating layers of titanium carbide and titanium, thereby improving the bonding force between the diamond layer 11 and the metal substrate 13, reducing the interfacial thermal stress between the metal substrate 13 and the diamond layer 11, preventing a sudden increase in thermal stress at the interface between the two, and improving the uniformity of heat conduction. Alternatively, it can be a multilayer composite structure composed of other materials such as Ti, Mo, W, Ta, Si, titanium carbide, molybdenum carbide, tungsten carbide, tantalum carbide, and silicon carbide, which will not be elaborated here.

[0067] Advantageously, the second buffer layer 12 is a gradient film structure. For example, the gradient film structure is formed as a multilayer structure with different thermal conductivity. Exemplarily, the gradient film structure includes three gradient film layers, namely a first gradient film layer, a second gradient film layer, and a third gradient film layer in the direction from the diamond layer 11 to the metal substrate 13. The first gradient film layer includes Si and tungsten carbide in a mass percentage ratio of 70:30; the second gradient film layer includes Si and tungsten carbide in a mass percentage ratio of 60:40; and the third gradient film layer includes Si and tungsten carbide in a mass percentage ratio of 30:70. This results in different mass contents of different substances on each gradient film layer, enabling the second buffer layer 12 to achieve a layer-by-layer transition in thermal conductivity, making the thermal stress transfer between the diamond layer 11 and the metal substrate 13 more stable and preventing sudden changes in thermal stress. Other materials among Ti, Mo, W, Ta, Si, titanium carbide, molybdenum carbide, tungsten carbide, tantalum carbide, and silicon carbide can also be used to make different gradient film layers, which will not be elaborated here.

[0068] Optionally, the metal substrate 13 is copper or a copper-based composite material. In these examples, copper or copper-based composite materials offer good thermal conductivity and are more affordable than gold, which helps control costs and achieve reliable heat transfer. The metal substrate 13 also provides a supporting base, enabling the entire diamond-based heat sink device 100 to provide stable support for the heat dissipation component 200. The copper-based composite material can be a copper-carbon composite material or a copper alloy composite material.

[0069] Advantageously, the melting point of the metal substrate 13 is greater than or equal to 700°C, which effectively prevents the metal substrate 13 from melting at high temperatures and ensures that the metal substrate 13 is structurally stable and does not collapse during heat dissipation.

[0070] Optionally, the thickness of the metal substrate 13 is 0.5 mm to 5 mm. If the metal substrate 13 is too thin, it will not provide sufficient support and adequate heat sinking; if the metal substrate 13 is too thick, the manufacturing cost will be high. Therefore, limiting the thickness of the metal substrate 13 to between 0.5 mm and 5 mm ensures that the metal substrate 13 provides good support, adequate heat sinking, and uniform heat transfer, while keeping the manufacturing cost within a reasonable range. Furthermore, limiting the thickness of the metal substrate 13 to between 0.5 mm and 2 mm is even more conducive to achieving the aforementioned performance.

[0071] Optionally, the thickness of the second buffer layer 12 is 0.1 μm to 10 μm. If the thickness of the second buffer layer 12 is too thin, it will not be able to cover the metal substrate 13, which will easily cause etching of the metal substrate 13 and reduce the bonding force between the second buffer layer 12 and the metal substrate 13; if the thickness of the second buffer layer 12 is too thick, the thermal resistance will be high, the cost will be high, and the interfacial stress will be increased. By limiting the thickness of the second buffer layer 12 to between 0.1 μm and 10 μm, it is possible to ensure that the second buffer layer 12 fully covers the metal substrate 13, effectively prevents etching of the metal substrate 13 during the fabrication process, and enables the second buffer layer 12 and the metal substrate 13 to have a large bonding force, low thermal resistance, and cost control within a reasonable range. Furthermore, limiting the thickness of the second buffer layer 12 to between 0.5 μm and 5 μm is more conducive to achieving the aforementioned performance.

[0072] In this utility model, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined with "first" and "second" may explicitly or implicitly include one or more of the stated features.

[0073] Optionally, the thickness of the diamond layer 11 can be from 0.1 μm to 50 μm. If the thickness of the diamond layer 11 is too thin, it will not be able to cover the second buffer layer 12, which may easily cause a short circuit in the diamond-based composite layer 10; if the thickness of the diamond layer 11 is too thick, the cost and stress will increase. By limiting the thickness of the diamond layer 11 within the above range, it is possible to ensure that the diamond layer 11 fully covers the second buffer layer 12, effectively preventing leakage of the diamond-based composite layer 10 and causing a short circuit in the heat-dissipating component 200, while keeping the manufacturing cost and stress within a reasonable range. Furthermore, limiting the thickness of the diamond layer 11 to 0.5 μm to 20 μm is more conducive to achieving the aforementioned performance.

[0074] Optionally, such as Figures 1 to 9 As shown, the heat-dissipating component 200 has a heat-conducting surface 201 facing the diamond layer 11 and an arrangement surface 202 away from the diamond layer 11. Two composite electrode layers 20 are connected between the heat-conducting surface 201 and the diamond layer 11 of the heat-dissipating component 200. The sides of the two composite electrode layers 20 away from the diamond layer 11 are respectively connected to the heat-conducting surface 201 at intervals. In these examples, even when the preset distance is equal to 0, the size of the contact surface between the heat-dissipating component 200 and the diamond layer 11 is smaller than the area of ​​the heat-conducting surface 201. That is, the heat-conducting surface 201 and the two composite electrode layers 20 form contact, so that the heat-conducting surface 201 and the diamond layer 11 partially form surface contact, while part of the heat is further transferred to the diamond layer 11 through the composite electrode layers 20 as intermediate heat transfer elements.

[0075] Advantageously, for Figures 1 to 9 In the example, two composite electrode layers 20 are respectively provided between the heat-conducting surface 201 and the diamond layer 11 of the heat-dissipating component 200. At this time, the contact surface between the two composite electrode layers 20 and the heat-conducting surface 201 (or the contact surface with the diamond layer 11) occupies 0.5~0.9 of the total surface area of ​​the diamond layer 11, ensuring good electrical and thermal conductivity, effectively preventing short circuits, and keeping the cost within a reasonable range.

[0076] Optionally, such as Figure 10 As shown, one composite electrode layer 20 is connected between the heat-conducting surface 201 and the diamond layer 11 of the heat-dissipating component 200, and the composite electrode layer 20 is connected to the conductive end on the heat-conducting surface 201. The orthographic projection of the other composite electrode layer 20 onto the diamond layer 11 is located outside the orthographic projection of the heat-dissipating component 200 onto the diamond layer 11, and the side of the other composite electrode layer 20 away from the diamond layer 11 is connected to the conductive end on the arrangement surface 202. In these examples, the heat-conducting surface 201 and the diamond layer 11 are separated only by one composite electrode layer 20, while the other composite electrode layer 20 is not connected to the heat-conducting surface 201 but to the arrangement surface 202. This makes the structural design of the diamond-based composite layer 10 more flexible, adaptable to connecting to the conductive ends of a wider variety of heat-dissipating components 200.

[0077] Optionally, such as Figure 11 As shown, the orthographic projections of the two composite electrode layers 20 onto the diamond layer 11 are both located outside the orthographic projection of the heat-dissipating component 200 onto the diamond layer 11. The sides of the two composite electrode layers 20 away from the diamond layer 11 are connected to different conductive ends of the arrangement surface 202. In these examples, the heat-conducting surface 201 is in complete contact with the diamond layer 11, with no composite electrode layer 20 between them, thus making the preset distance equal to 0. In this case, the heat-dissipating component 200 does not need to pass through the composite electrode layer 20 for intermediate conduction during heat dissipation, but directly transfers all the heat to the diamond layer 11, and then from the diamond layer 11 to the entire diamond-based composite layer 10, thus allowing the heat to be rapidly deposited into the diamond-based composite layer 10. The diamond layer 11 also provides support and insulation for the entire heat-dissipating component 200, making the working performance of the heat-dissipating component 200 more stable.

[0078] The following describes the preparation method of the diamond-based heat sink device 100 of this utility model.

[0079] The methods for fabricating the diamond-based heat sink device 100 in the aforementioned examples proposed in this utility model, such as... Figure 12 As shown, the preparation method includes the following steps:

[0080] Step S10: Provide a diamond-based composite layer 10 with a diamond layer 11.

[0081] Optionally, the diamond-based composite layer 10 includes a diamond layer 11, a second buffer layer 12, and a metal substrate 13. The diamond-based composite layer 10 is prepared to provide a diamond-based composite layer 10 with a diamond layer 11: a metal substrate 13 is provided, and a second buffer layer 12 is prepared on the metal substrate 13 by physical vapor deposition or chemical vapor deposition; a diamond layer 11 is prepared on the second buffer layer 12 by chemical vapor deposition, thereby forming a three-layer composite structure.

[0082] For example, the diamond layer 11 is prepared by hot-wire chemical vapor deposition, specifically as follows: the metal substrate 13 containing the second buffer layer 12 is cleaned with deionized water, anhydrous ethanol, and deionized water for 5 min to 30 min respectively; the surface is dried with nitrogen; it is then dried with ozone gas in a surface cleaning machine for 5 min to 30 min; and the sample is then nucleated in a diamond suspension for 5 min to 30 min. It is then dried with nitrogen and placed on a heating stage at 50°C to 80°C. The composite structure of the treated diamond layer 11 and the second buffer layer 12 is placed on the deposition stage of the hot-wire chemical vapor deposition apparatus. After the internal vacuum is evacuated to below 5 Pa, hydrogen and methane are introduced as reaction gases to deposit the diamond layer 11 on the second buffer layer 12. The process parameters are as follows: the temperature of the deposition stage is 600℃~800℃, the hydrogen flow rate is 400sccm~600sccm, the methane flow rate is 10sccm~30sccm, the gas pressure is 3kPa~8kPa, the power of the hot filament chemical vapor deposition device is 15kW~20kW, the deposition time is 1h~20h, and the thickness of the diamond layer 11 is 1μm~20μm.

[0083] Step S20: Based on the position of the composite electrode layer 20 on the diamond-based composite layer 10 and the first preset depth, two composite electrode layers 20 are prepared on the surface of the diamond layer 11 by combining at least one of chemical vapor deposition, physical vapor deposition and electrochemical methods with etching.

[0084] Alternatively, the etching method may include plasma etching or photolithography.

[0085] Optionally, when the first preset depth is 0, a first buffer layer 21 is directly prepared on the surface of the diamond layer 11 using physical vapor deposition (PVD) or chemical vapor deposition (CVD). Then, a conductive layer 22 is further prepared on the surface of the first buffer layer 21 using PVD or CVD. Next, a metal protective layer 23 is further prepared on the surface of the conductive layer 22 using PVD or CVD. Afterwards, exposure, etching, and cleaning processes are used to process the metal protective layer 23, the conductive layer 22, and the first buffer layer 21, leaving the two required components. Finally, a positive electrode layer 24 or a negative electrode layer 25 is welded onto the two spaced metal protective layers 23 to achieve the fabrication of the composite electrode layer 20.

[0086] Optionally, when the first preset depth is greater than 0, a pit structure can be obtained on the surface of the diamond layer 11 using a patterning process of photolithography and etching, and then the relevant layer structure of the composite electrode layer 20 can be prepared on the surface of the diamond layer 11 with the pit structure. The method for preparing the relevant layer structure of the composite electrode layer 20 is similar to the preparation method used when the first preset depth is equal to 0, and will not be described in detail here.

[0087] For example, in the plasma etching process, one or a combination of CF4, oxygen, trifluoromethane, or Ar is selected for etching; the etching working pressure is 0.5 Pa to 100 Pa, and the etching power density is 0.5 W / cm³. 2 ~20 W / cm 2 When the etching working pressure is within the above range, the plasma has good stability, good etching uniformity, high etching efficiency, and will not damage the surface structure of the diamond layer 11.

[0088] In the specific example, a 1:1 ratio of oxygen to trifluoromethane was used for etching, with an etching power of 400W and an etching working pressure of 20Pa.

[0089] Step S30: Connect the composite electrode layer 20 to the heat-dissipating component 200 according to the position of the composite electrode layer 20 on the heat-dissipating component 200 and the second preset depth.

[0090] For example: the positive electrode layer 24 or the negative electrode layer 25 is soldered onto the heat-dissipating component 200 to achieve the connection between the composite electrode layer 20 and the heat-dissipating component 200.

[0091] For cases where the second preset distance is greater than 0, it is only necessary to adjust the position of the composite electrode layer 20 relative to the diamond layer 11 and the thickness of the exposed diamond layer 11 in advance according to the position of the connection groove of the component to be cooled 200, so that the composite electrode layer 20 can be aligned with the heat dissipation component 200 and can be connected to the heat dissipation component 200.

[0092] The method for fabricating the diamond-based heat sink device 100 proposed in this invention connects the two conductive ends of the heat-dissipating component 200 to the composite electrode layer 20, and then connects the composite electrode layer 20 to the diamond-based composite layer 10. This achieves efficient and safe heat dissipation while simultaneously enabling the electronic device function of the heat-dissipating component 200. The fabrication method can be adjusted according to the spacing and layout structure between the heat-dissipating component 200 and the diamond-based composite layer 10, thereby fabricating diamond-based heat sink devices 100 with different structural forms to meet the arrangement requirements of the heat-dissipating component 200.

[0093] Optionally, after step S30, step S40 is also included: after connecting the composite electrode layer 20 to the heat dissipation component 200, when the preset distance is greater than 0, thermal grease 30 is filled between the diamond layer 11 and the heat dissipation component 200.

[0094] The diamond-based heat sink device 100 of this application and its preparation method are further described below with reference to specific embodiments.

[0095] Example 1

[0096] like Figure 1 As shown, the diamond-based heat sink device 100 includes a diamond-based composite layer 10 and two composite electrode layers 20. The diamond-based composite layer 10 includes a diamond layer 11, a second buffer layer 12, and a metal substrate 13. The second buffer layer 12 is disposed on the side of the diamond layer 11 away from the composite electrode layers 20, and the metal substrate 13 is disposed on the side of the second buffer layer 12 away from the diamond layer 11. The second buffer layer 12 is made of Ti. The metal substrate 13 is made of Cu.

[0097] Two composite electrode layers 20 are spaced apart and disposed in the opposite region between the diamond layer 11 and the heat-dissipating component 200. Each composite electrode layer 20 includes a first buffer layer 21, a conductive layer 22, and a metal protective layer 23. The first buffer layer 21 has a first surface 211 and a second surface 212 disposed opposite to each other. The first surface 211 contacts the diamond layer 11, the conductive layer 22 is disposed on the second surface 212, and the metal protective layer 23 is disposed on the side of the conductive layer 22 away from the first buffer layer 21. Each composite electrode layer 20 also includes a positive electrode layer 24 and a negative electrode layer 25. In one composite electrode layer 20, the side of the metal protective layer 23 away from the conductive layer 22 has the positive electrode layer 24, and in the other composite electrode layer 20, the side of the metal protective layer 23 away from the conductive layer 22 has the negative electrode layer 25. The first buffer layer 21 is made of Ti, the conductive layer 22 is made of Cu, and the metal protective layer 23 is made of gold. The positive electrode layer 24 and the negative electrode layer 25 are both made of gold. The positive electrode layer 24 and the negative electrode layer 25 of the two composite electrode layers 20 are used to connect different conductive terminals of the component 200 to be cooled.

[0098] The two composite electrode layers 20 are embedded at a first preset depth in the diamond layer 11, and the two composite electrode layers 20 are embedded at a second preset depth in the heat dissipation component 200, so that the distance between the heat dissipation component 200 and the opposite surface of the diamond-based composite layer 10 reaches a preset distance; the first preset depth is equal to 0, the second preset depth is equal to 0, and the preset distance is equal to the thickness of the composite electrode layer 20.

[0099] The following describes the fabrication steps of the diamond-based heat sink device 100 in this embodiment:

[0100] like Figure 12 As shown, in step S10, a second buffer layer 12 of Ti material is prepared by chemical vapor deposition on the surface of a Cu metal substrate 13. The thickness of the second buffer layer 12 is 5 μm. The metal substrate 13 with the second buffer layer 12 is cleaned with deionized water, anhydrous ethanol, and deionized water for 20 min each, dried with nitrogen, and then dried with ozone gas in a surface cleaning machine for 20 min. The sample is then nucleated in a diamond suspension for 25 min. Afterward, it is dried with nitrogen and then dried at 50°C on a heating stage. The composite structure of the treated diamond layer 11 and the second buffer layer 12 is placed on the deposition stage of a hot-wire chemical vapor deposition apparatus. After the internal vacuum is evacuated to below 5 Pa, hydrogen and methane are introduced as reaction gases to deposit the diamond layer 11 on the second buffer layer 12. The deposition stage temperature was 600℃, the hydrogen flow rate was 500 sccm, the methane flow rate was 20 sccm, the gas pressure was 4 kPa, the power of the hot filament chemical vapor deposition apparatus was 15 kW, the deposition time was 12 h, and a diamond layer 11 with a thickness of 15 μm was obtained.

[0101] Step S20: A first buffer layer 21 made of Ti is directly prepared on the surface of the diamond layer 11 using chemical vapor deposition (CVD). A conductive layer 22 made of Cu is then prepared on the surface of the first buffer layer 21 using CVD. A metal protective layer 23 made of gold is then prepared on the surface of the conductive layer 22 using CVD. Afterwards, the metal protective layer 23, conductive layer 22, and first buffer layer 21 are processed using exposure, etching, and cleaning processes, leaving the two required parts. During etching, a 1:1 mixture of oxygen and trifluoromethane is used at an etching power of 400W and an etching working pressure of 20Pa. Finally, a positive electrode layer 24 or a negative electrode layer 25 is welded onto the two spaced metal protective layers 23, and the other ends of the positive electrode layer 24 and the negative electrode layer 25 are welded to the heat-dissipating component 200, thus connecting the composite electrode layer 20 to the heat-dissipating component 200. The positive electrode layer 24 or the negative electrode layer 25 is made of gold.

[0102] In this embodiment 1, the first buffer layer 21 or the second buffer layer 12 can also be selected from one or more of Mo, W, Ta, Si, titanium carbide, molybdenum carbide, tungsten carbide, tantalum carbide, and silicon carbide, or a combination of Ti and Mo, W, Ta, Si, titanium carbide, molybdenum carbide, tungsten carbide, tantalum carbide, and silicon carbide. No limitation is imposed here. The conductive layer 22 or the metal substrate 13 can also be selected from copper-based composite materials. No limitation is imposed here. The metal protective layer 23 can also be selected from gold-based composite materials. No limitation is imposed here. The positive electrode layer 24 and the negative electrode layer 25 can also be selected from gold alloys. No limitation is imposed here. Furthermore, the selected process parameters can also be combined and selected within the aforementioned process parameter range according to requirements. No limitation is imposed here. This embodiment 1 is merely exemplary and should not be construed as limiting this application.

[0103] Example 2

[0104] like Figures 2-4 , Figure 6 and Figure 7 As shown, for cases where the first preset depth is greater than 0, it is necessary to open pit structures of different depths on the surface of the diamond layer 11. Compared with Example 1, the main process is roughly the same. The difference is that in step S20, a patterning process of photolithography and etching is used to obtain a pit structure on the surface of the diamond layer 11, and then a related layer structure of the composite electrode layer 20 is prepared on the surface of the diamond layer 11 with the pit structure.

[0105] Example 3

[0106] like Figure 9 As shown, thermal grease 30 can be added for each embodiment where the preset distance is greater than 0. In these examples, the main process is roughly the same as in embodiment 1. The difference is that after step S30, step S40 is added: after connecting the composite electrode layer 20 to the heat dissipation component 200, thermal grease 30 is filled between the diamond layer 11 and the heat dissipation component 200.

[0107] Example 4

[0108] like Figure 8 or Figure 9 As shown, for each embodiment where the positive electrode layer 24 and / or the negative electrode layer 25 are welded to the arrangement surface 202 of the heat dissipation component 200, the main process is roughly the same as that in embodiment 1. The difference is that in step S30, the positive electrode layer 24 and / or the negative electrode layer 25 are bent before being welded to the heat dissipation component 200.

[0109] Example 5

[0110] In this embodiment, the second buffer layer 12 is a gradient film structure. From the diamond layer 11 to the metal substrate 13, there are a first gradient film, a second gradient film, and a third gradient film. The first gradient film comprises Ti and Mo in a mass ratio of 30:70; the second gradient film comprises Ti and Mo in a mass ratio of 60:40; and the third gradient film comprises Ti and Mo in a mass ratio of 80:20. Compared to Embodiment 1, the main process is largely the same. The difference is that in step S10, physical vapor deposition is performed on the Cu metal substrate 13 to prepare a first third gradient film with a mass ratio of 80:20 Ti and Mo. Then, physical vapor deposition is performed on the third gradient film to prepare a second second gradient film with a mass ratio of 60:40 Ti and Mo. Subsequently, physical vapor deposition is performed on the second gradient film to prepare a third first gradient film with a mass ratio of 30:70 Ti and Mo, thereby constituting the second buffer layer 12 of this embodiment. Other steps are not described in detail here.

[0111] Example 6

[0112] In this embodiment, the second buffer layer 12 is a multilayer composite structure, comprising alternating layers of titanium and titanium carbide. Compared to Embodiment 1, the main process is largely the same, except that in step S10, a titanium layer is prepared by physical vapor deposition on a Cu metal substrate 13, followed by a titanium carbide layer prepared by physical vapor deposition (e.g., sputtering deposition) on the titanium layer. Then, another titanium layer and a titanium carbide layer are prepared on the titanium carbide layer, and this process is repeated multiple times to ultimately form the second buffer layer 12 with a multilayer composite structure. Other steps are not described in detail here.

[0113] The above description is merely a specific embodiment of this utility model, but the protection scope of this utility model is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in this utility model, and these modifications or substitutions should all be covered within the protection scope of this utility model. Therefore, the protection scope of this utility model should be determined by the scope of the claims.

Claims

1. A diamond-based heat-sink device, characterized by, include: Diamond-based composite layer, including a diamond layer; Two composite electrode layers are spaced apart and connected to the diamond layer, and the two composite electrode layers are respectively used to connect different conductive terminals of the component to be cooled; the embedment depth of the two composite electrode layers in the diamond layer is a first preset depth, and the embedment depth of the two composite electrode layers in the component to be cooled is a second preset depth, so that the distance between the component to be cooled and the relative surfaces of the diamond-based composite layer reaches a preset distance; the contact surface between the two composite electrode layers and the diamond layer occupies 0.1~0.3 of the surface area of ​​the diamond layer; The first preset depth is greater than or equal to 0 and less than or equal to the thickness of the composite electrode layer; the second preset depth is greater than or equal to 0 and less than or equal to the thickness of the composite electrode layer; the preset distance is greater than or equal to 0 and less than or equal to the thickness of the composite electrode layer; when the preset distance is greater than 0, thermal grease is filled between the diamond layer and the component to be cooled.

2. The diamond-based heat spreader device of claim 1, wherein, The first preset depth is equal to the thickness of the composite electrode layer, the second preset depth is equal to 0, and the preset distance is equal to 0; or... The first preset depth is equal to 0, the second preset depth is equal to the thickness of the composite electrode layer, and the preset distance is equal to 0. or, The sum of the first preset depth and the second preset depth is equal to the thickness of the composite electrode layer, and the preset distance is equal to 0; or, The two composite electrode layers and the heat dissipation component are respectively connected at different positions on the diamond layer, and the first preset depth is greater than or equal to 0, the second preset depth is equal to 0, and the preset distance is equal to 0.

3. The diamond-based heat spreader device of claim 2, wherein, When the preset distance is equal to 0, the contact area between the component to be cooled and the diamond layer accounts for 0.1% to 90% of the heat dissipation area of ​​the diamond layer.

4. The diamond-based heat spreader device of claim 1, wherein, The composite electrode layer includes: A first buffer layer has a first surface and a second surface disposed opposite to each other, the first surface being in contact with the diamond layer; A conductive layer is disposed on the second surface; A metal protective layer is disposed on the side of the conductive layer away from the first buffer layer; A positive electrode layer or a negative electrode layer is disposed on the side of the metal protective layer away from the conductive layer, and the positive electrode layer or the negative electrode layer is connected to the conductive terminal of the component to be cooled.

5. The diamond-based heat sink device as described in claim 4, characterized in that, The conductive layer is copper or a copper-based composite material; The metal protective layer is gold or a gold-based composite material.

6. The diamond-based heat sink device as described in claim 4, characterized in that, The thickness of the first buffer layer is 0.1 μm to 2 μm; The thickness of the conductive layer is 1μm~50μm; The thickness of the metal protective layer is 10nm~500nm; The distance between the two farthest ends of the cross-sections of the positive electrode layer and the negative electrode layer is 0.50 mm to 3 mm.

7. The diamond-based heat spreader device of claim 1, wherein, The diamond-based composite layer further includes: A second buffer layer is disposed on the side of the diamond layer away from the composite electrode layer; A metal substrate is disposed on the side of the second buffer layer away from the diamond layer.

8. The diamond-based heat sink device as described in claim 7, characterized in that, The metal substrate is copper or a copper-based composite material.

9. The diamond-based heat spreader device of claim 7, wherein, The thickness of the metal substrate is 0.5mm to 5mm; The thickness of the second buffer layer is 0.1 μm to 10 μm; The thickness of the diamond layer is 0.1μm to 50μm.

10. The diamond-based heat spreader device of claim 4, wherein, The heat-dissipating component has a heat-conducting surface facing the diamond layer and an arrangement surface away from the diamond layer; The two composite electrode layers are connected between the heat-conducting surface of the component to be cooled and the diamond layer, with the sides of the two composite electrode layers away from the diamond layer respectively connected to the heat-conducting surface at intervals; or, One of the composite electrode layers is connected between the heat-conducting surface of the component to be cooled and the diamond layer, and the composite electrode layer is connected to a conductive end on the heat-conducting surface; the other composite electrode layer's orthographic projection onto the diamond layer is located outside the orthographic projection of the component to be cooled onto the diamond layer, and the side of the other composite electrode layer away from the diamond layer is connected to a conductive end on the arrangement surface; or, The orthographic projections of the two composite electrode layers onto the diamond layer are both located outside the orthographic projection of the component to be cooled onto the diamond layer, and the sides of the two composite electrode layers away from the diamond layer are both connected to different conductive ends on the arrangement surface.

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