Cleaning machine table

Abstract

A cleaning machine table comprises a cleaning pool, a cleaning device and a control device, the manipulator is suitable for grabbing the wafer and transmitting the wafer; a transmitting end of the laser detection module is located on one side of the cleaning pool, a receiving end of the laser detection module is located on the other side of the cleaning pool, and a light path between the transmitting end and the receiving end corresponds to the position of the wafer grabbed by the manipulator; the first baffle is located on one side of the receiving end away from the transmitting end; and the first anti-reflection layer is arranged between the first baffle and the receiving end, and the first anti-reflection layer is suitable for inhibiting mirror reflection of the laser. The first anti-reflection layer is arranged, so that laser subjected to scattering and diffuse reflection on the surface of the wafer is prevented from entering the surface of the first baffle and being reflected to the receiving end through the mirror surface of the first baffle, reflected light received by the receiving end is reduced, and the situation that the light received by the receiving end is too complex is avoided. Therefore, the receiving end can judge the position of the wafer according to the received laser from the transmitting end, so that machine shutdown caused by wrong feedback of the laser detection module to a machine is avoided.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing, and in particular to a cleaning machine. Background Technology

[0002] Chemical mechanical polishing (CMP) is a step in semiconductor manufacturing. It combines chemical etching with mechanical removal. The chemical components in the polishing slurry first react slightly with the material to be removed from the wafer surface, softening it. Then, the polishing head applies pressure and moves relative to the polishing pad, physically removing the reactants to achieve the leveling effect.

[0003] In the semiconductor integrated circuit manufacturing process, after the wafer is polished in a chemical mechanical polishing machine, it is transferred to a cleaning chamber to continue a series of cleaning steps. After cleaning, the wafer is also dried to complete the chemical mechanical polishing process.

[0004] However, the current cleaning machines still have many problems. Utility Model Content

[0005] The problem solved by this invention is how to improve the cleaning machine to suppress the specular reflection of the laser, so that the laser detection module can correctly feed back electrical signals to the control module, avoiding machine shutdown caused by incorrect feedback of electrical signals from the laser detection module to the control module, and improving the wafer yield.

[0006] To address the aforementioned problems, this utility model provides a cleaning machine, comprising: a cleaning tank containing a wafer; a robotic arm adapted to grasp and transport the wafer; a laser detection module including a transmitter and a receiver, the transmitter being located on one side of the cleaning tank and the receiver on the other side of the cleaning tank, the optical path between the transmitter and the receiver corresponding to the position of the wafer grasped by the robotic arm; a first baffle located on the side of the receiver away from the transmitter; and a first anti-reflection layer disposed between the first baffle and the receiver, the first anti-reflection layer being adapted to suppress specular reflection of the laser.

[0007] Optionally, the first anti-reflective layer is a micro-surface structure layer.

[0008] Optionally, the first anti-reflective layer is a light-absorbing coating.

[0009] Optionally, the first anti-reflective layer is made of a different material than the first baffle; or, the first anti-reflective layer is integrally connected to the first baffle.

[0010] Optionally, the projection range of the first anti-reflective layer on the surface of the first baffle surrounds the projection of the receiving end on the surface of the first baffle.

[0011] Optionally, it further includes: a second baffle located on the side of the transmitter away from the receiver; and a second anti-reflective layer disposed between the second baffle and the transmitter.

[0012] Optionally, the projection range of the second anti-reflective layer on the surface of the second baffle surrounds the projection of the transmitting end on the surface of the second baffle.

[0013] Optionally, the second anti-reflective layer is a micro-surface structure layer.

[0014] Optionally, the second anti-reflective layer is a light-absorbing coating.

[0015] Optionally, the projection of the anti-reflective layer on the surface of the baffle coincides with the baffle, wherein the anti-reflective layer is one of the first anti-reflective layer and the second anti-reflective layer, and the baffle is one of the corresponding first baffle and the second baffle.

[0016] Optionally, the receiving end is adapted to convert the received laser into an electrical signal; the cleaning machine further includes a control module, which is adapted to obtain the position information of the wafer grasped by the robotic arm based on the electrical signal.

[0017] Compared with the prior art, the technical solution of this utility model has the following advantages:

[0018] In the cleaning machine of this utility model, the first anti-reflection layer is disposed between the first baffle and the receiving end. The first anti-reflection layer is suitable for suppressing specular reflection of the laser. By providing the first anti-reflection layer, laser light that is scattered and diffusely reflected at the wafer surface is prevented from incident on the surface of the first baffle and reflected by the first baffle to the receiving end. This avoids the light received by the receiving end being too complex, allowing the receiving end to determine the wafer's position based on the laser light received from the transmitting end. This prevents the laser detection module from giving incorrect feedback to the machine, causing machine downtime, ensuring normal machine operation, and increasing machine operating time. Furthermore, since the first anti-reflection layer is disposed between the first baffle and the receiving end, the cost of installing or replacing the first anti-reflection layer is low, and the detection accuracy of the laser detection module can be significantly improved without major modifications. This prevents the wafer from being unusable due to prolonged immersion in the cleaning tank during machine downtime, thus improving wafer yield.

[0019] In an optional embodiment of this invention, the first anti-reflection layer is a micro-surface structure layer. This micro-surface structure layer is suitable for diffuse reflection of the laser emitted by the transmitting end to suppress specular reflection, reducing the reflected light received by the receiving end. This avoids overly complex light received by the receiving end, allowing the receiving end to determine the wafer's position based on the received laser from the transmitting end. This prevents the laser detection module from providing incorrect feedback to the machine, causing machine downtime, ensuring normal machine operation, and increasing machine operating time.

[0020] In an optional embodiment of this invention, the first anti-reflection layer is a light-absorbing coating. The light-absorbing coating is suitable for absorbing the laser emitted by the transmitting end to suppress specular reflection of the laser, reducing the reflected light received by the receiving end, and preventing the light received by the receiving end from being too complex. This allows the receiving end to determine the wafer's position based on the laser received from the transmitting end, thereby preventing the laser detection module from providing incorrect feedback to the machine and causing machine downtime, ensuring the normal operation of the machine, and increasing the machine's operating time. Attached Figure Description

[0021] Figure 1 This is a top view of a cleaning machine.

[0022] Figure 2 This is a side view of a cleaning machine.

[0023] Figure 3 This is a top view of the cleaning machine according to an embodiment of the present invention;

[0024] Figure 4 This is a side view of a cleaning machine according to an embodiment of the present invention;

[0025] Figure 5 This is a side view of a cleaning machine according to another embodiment of the present invention. Detailed Implementation

[0026] As the background technology indicates, current cleaning machines still have problems. The causes of these problems are analyzed below:

[0027] Please refer to Figure 1 and Figure 2 A cleaning machine, comprising:

[0028] A cleaning tank 100, the cleaning tank 100 being adapted to contain a cleaning solution for cleaning wafers;

[0029] A robotic arm (not shown) is adapted to grasp and transfer the wafer from the cleaning tank 100;

[0030] A laser detection module, comprising a transmitter 101 and a receiver 102, wherein the transmitter 101 is located on one side of the cleaning tank 100 and the receiver 102 is located on the other side of the cleaning tank 100, and the optical path between the transmitter 101 and the receiver 102 corresponds to the position of the wafer grasped by the robotic arm.

[0031] A first baffle 103 is located on the side of the receiver 102 away from the transmitter 101.

[0032] In the laser detection module, the wafer position is determined by the change in the light intensity of the laser received by the receiver 102. When there is no wafer in the optical path between the transmitter 101 and the receiver 102, the light intensity received by the receiver 102 is stable. When there is a wafer in the optical path between the transmitter 101 and the receiver 102, due to the wafer's certain size and thickness, when the wafer is grasped by the robotic arm, the wafer in the laser propagation path will block the laser propagation, and the laser cannot continue to reach the receiver 102. The light intensity received by the receiver 102 changes due to the wafer's obstruction, and the laser detection module can then feed back the wafer position determination result to the cleaning machine.

[0033] The cleaning machine is a closed machine. Specifically, the first baffle 103 is adapted to surround the cleaning pool 100 to form a closed chamber.

[0034] Specifically, the first baffle 103 is a stainless steel baffle.

[0035] However, stainless steel has a high reflectivity. When a laser beam strikes the wafer, in addition to the portion of the laser beam blocked by the wafer, some of the laser beam will be scattered and diffusely reflected on the wafer surface. This scattered and diffusely reflected light will propagate in all directions at different angles. Some of this light will strike the stainless steel baffle and then be reflected back to the receiver 102. Thus, even if a wafer is located in the optical path between the transmitter 101 and the receiver 102, the receiver 102 will still receive the reflected light from the stainless steel baffle. This causes the receiver 102 to be unable to accurately sense changes in light intensity, resulting in incorrect feedback from the laser detection module to the machine, which in turn leads to machine shutdown, prolonged immersion of the wafer in chemical cleaning solution, and ultimately, wafer failure or defective wafers.

[0036] To solve the aforementioned technical problem, this utility model provides a cleaning machine, comprising: a cleaning tank containing a wafer; a robotic arm adapted to grasp and transport the wafer; a laser detection module including a transmitter and a receiver, the transmitter being located on one side of the cleaning tank and the receiver being located on the other side of the cleaning tank, the optical path between the transmitter and the receiver corresponding to the position of the wafer grasped by the robotic arm; a first baffle located on the side of the receiver away from the transmitter; and a first anti-reflection layer disposed between the first baffle and the receiver, the first anti-reflection layer being adapted to suppress specular reflection of the laser.

[0037] In the cleaning machine of this utility model, a first anti-reflection layer is provided to prevent laser light that is scattered and diffusely reflected on the wafer surface from being incident on the first baffle and reflected by the mirror surface of the first baffle to the receiving end. This avoids the light received by the receiving end being too complex, allowing the receiving end to determine the position of the wafer by receiving the laser from the transmitting end. This prevents the laser detection module from giving incorrect feedback to the machine, causing the machine to stop, thus ensuring the normal operation of the machine and increasing the machine's working time. Furthermore, the first anti-reflection layer is located between the first baffle and the receiving end. The cost of installing or replacing the first anti-reflection layer is low, and the detection accuracy of the laser detection module can be significantly improved without major modifications. This avoids the situation where the wafer is immersed in the cleaning pool for a long time due to machine downtime, resulting in wafer scrap, and improves the wafer yield.

[0038] To make the above-mentioned objectives, features and advantages of this utility model more apparent and understandable, the specific embodiments of this utility model will be described in detail below with reference to the accompanying drawings.

[0039] Specifically, in some embodiments of this utility model, after chemical mechanical polishing, the wafer is conveyed to the cleaning machine via a conveying mechanism for cleaning.

[0040] Please refer to the reference. Figure 3 and Figure 4 , Figure 3 This is a top view of the cleaning machine. Figure 4 This is a side view of the cleaning machine, which includes a cleaning tank 200 containing a wafer.

[0041] Specifically, in some embodiments of this utility model, the cleaning tank 200 is adapted to contain chemical cleaning solution for cleaning the wafer.

[0042] Specifically, in some embodiments of this utility model, there are at least two cleaning pools 200. Each cleaning pool 200 includes an ultrasonic cleaning pool and a drying pool.

[0043] The cleaning machine includes a robotic arm adapted to grasp and transport the wafer.

[0044] Specifically, in some embodiments of this utility model, the robotic arm is adapted to pick up the wafer from a cleaning pool, move the wafer above the cleaning pool, and then transfer the wafer to another cleaning pool.

[0045] The cleaning machine includes a laser detection module, which includes a transmitter 201 and a receiver 202. The transmitter 201 is located on one side of the cleaning pool 200, and the receiver 202 is located on the other side of the cleaning pool 200. The optical path between the transmitter 201 and the receiver 202 corresponds to the position of the wafer grasped by the robotic arm.

[0046] In the laser detection module, the wafer position is determined by the change in the light intensity of the laser received by the receiver 202. Under normal circumstances, the laser emitted by the transmitter 201 reaches the receiver 202 directly. When an object (such as a wafer) is located in the propagation path of the laser, the wafer will block part or all of the laser, causing a change in the light intensity received by the receiver 202. The laser detection module can then report the wafer position determination result to the cleaning machine.

[0047] Specifically, in some embodiments of this utility model, the optical path between the transmitting end 201 and the receiving end 202 corresponds to the position of the wafer grasped by the robotic arm, that is, the robotic arm moves along the path of the optical path between the transmitting end 201 and the receiving end 202 to grasp and transport the wafer.

[0048] Specifically, the transmitter 201 is located above the cleaning tank 200; the receiver 202 is located above the cleaning tank 200. When the robotic arm picks up the wafer and transports it, the wafer passes through the optical path between the transmitter 201 and the receiver 202.

[0049] Specifically, the transmitting end 201 is adapted to emit laser light, and the receiving end 202 is adapted to receive laser light from the transmitting end 201 to determine the position information of the wafer grasped by the robotic arm.

[0050] Specifically, the receiver 202 is adapted to convert the received laser into an electrical signal.

[0051] The cleaning machine also includes a control module, which is adapted to obtain the position information of the wafer grasped by the robotic arm based on the electrical signal.

[0052] The cleaning machine includes a first baffle 203, which is located on the side of the receiver 202 away from the transmitter 201.

[0053] Specifically, the cleaning machine is an enclosed machine, and the first baffle 203 is adapted to form the enclosed machine.

[0054] Specifically, in some embodiments of this utility model, the first baffle 203 is a stainless steel baffle.

[0055] The cleaning machine includes a first anti-reflection layer 204, which is disposed between the first baffle 203 and the receiving end 202, and is adapted to suppress specular reflection of the laser.

[0056] The first anti-reflection layer 204 is provided to prevent laser light that is scattered and diffusely reflected on the wafer surface from being incident on the surface of the first baffle 203 and reflected by the mirror of the first baffle 203 to the receiver 202. This reduces the amount of light received by the receiver 202 and prevents the receiver 202 from receiving too much complex light, which would prevent the receiver 202 from being unable to correctly extract the laser light from the transmitter 201. This avoids the laser detection module giving incorrect feedback to the machine, causing the machine to stop, ensuring the normal operation of the machine and increasing the machine's working time. Furthermore, the first anti-reflection layer 204 is located between the first baffle 203 and the receiver 202. The cost of installing or replacing the first anti-reflection layer 204 is low, and the detection accuracy of the laser detection module can be significantly improved without major modifications. This avoids the situation where the machine stops and the wafer is immersed in the cleaning pool 200 for a long time, resulting in wafer scrap, thus improving the wafer yield.

[0057] In some embodiments of this utility model, the first anti-reflective layer 204 is made of a different material than the first baffle 203. The first anti-reflective layer 204 is a corrosion-resistant, anti-reflective, and rust-free material layer.

[0058] Specifically, in some embodiments of this utility model, such as Figure 3 As shown, the first anti-reflective layer 204 is in contact with the first baffle 203, that is, there is no gap between the first anti-reflective layer 204 and the first baffle 203.

[0059] Specifically, in some other embodiments of this invention, the first anti-reflective layer is integrally connected to the first baffle. The first anti-reflective layer is obtained by frosting the first baffle.

[0060] Specifically, in some other embodiments of this utility model, the first anti-reflective layer does not contact the first baffle, that is, there is a gap between the first anti-reflective layer and the first baffle.

[0061] Specifically, in some embodiments of this utility model, the first anti-reflection layer 204 is a micro-surface structure layer.

[0062] The micro-surface structure layer is adapted to diffusely reflect the laser emitted by the transmitter 201 to suppress specular reflection of the laser on the surface of the first baffle 203, thereby reducing the reflected light received by the receiver 202. This prevents the receiver 202 from receiving overly complex light, which would prevent it from correctly extracting the laser from the transmitter 201. Consequently, it avoids the laser detection module from giving incorrect feedback to the machine, causing the machine to stop, thus ensuring the normal operation of the machine and increasing its working time.

[0063] Specifically, in some embodiments of this utility model, the first anti-reflective layer 204 is a light-absorbing coating.

[0064] The light-absorbing coating is adapted to absorb the laser emitted by the transmitter 201 to suppress the specular reflection of the laser on the surface of the first baffle 203, thereby reducing the reflected light received by the receiver 202. This prevents the receiver 202 from receiving overly complex light that would prevent it from correctly extracting the laser from the transmitter 201, thus avoiding incorrect feedback from the laser detection module to the machine causing machine shutdown. This ensures the normal operation of the machine and increases its working time.

[0065] Specifically, the projection range of the first anti-reflective layer 204 on the surface of the first baffle 203 surrounds the projection of the receiver 202 on the surface of the first baffle 203.

[0066] The projection area of ​​the first anti-reflective layer 204 on the surface of the first baffle 203 surrounds the projection of the receiving end 202 on the surface of the first baffle 203. That is, the projection of the first anti-reflective layer 204 on the surface of the first baffle 203 completely covers the projection of the receiving end 202 on the surface of the first baffle 203, and the projection of the first anti-reflective layer 204 on the surface of the first baffle 203 is larger than the projection of the receiving end 202 on the surface of the first baffle 203. By setting the first anti-reflective layer 204 to the specified size, the reflected light received by the receiving end 202 is reduced, preventing the receiving end 202 from receiving overly complex light that would prevent it from correctly extracting the laser from the transmitting end 201. This avoids the laser detection module giving incorrect feedback to the machine, causing machine downtime, ensuring the normal operation of the machine, and increasing the machine's working time.

[0067] The cleaning machine also includes: a second baffle 205, which is located on the side of the transmitter 201 away from the receiver 202; and a second anti-reflective layer 206, which is disposed between the second baffle 205 and the transmitter 201.

[0068] The cleaning machine is an enclosed machine, and the second baffle 205 is adapted to form the enclosed machine. The second baffle 205 and the first baffle 203 are respectively located on opposite sides of the cleaning pool 200, and the size of the second baffle 205 is the same as that of the first baffle 203.

[0069] Specifically, in some embodiments of this utility model, the second baffle 205 is a stainless steel baffle.

[0070] Specifically, the second anti-reflection layer 206 is adapted to suppress the specular reflection of reflected light from the first baffle 203 onto the surface of the second baffle 205.

[0071] The second anti-reflection layer 206 reduces the reflected light received by the receiver 202 from the mirror reflection of the second baffle 205. This prevents the receiver 202 from receiving overly complex light that could prevent it from correctly extracting the laser from the transmitter 201, thus avoiding incorrect feedback from the laser detection module and preventing machine downtime. This ensures normal machine operation and increases machine uptime. Furthermore, since the second anti-reflection layer 206 is located between the second baffle 205 and the transmitter 201, the cost of installing or replacing the second anti-reflection layer 206 is low. It can significantly improve the detection accuracy of the laser detection module without major modifications, preventing the wafer from being scrapped due to prolonged immersion in the cleaning pool 200 during machine downtime, thereby improving wafer yield.

[0072] The second anti-reflective layer 206 is made of a different material than the second baffle 205. The second anti-reflective layer 206 is a corrosion-resistant, anti-reflective, and rust-free material layer.

[0073] Specifically, in some embodiments of this utility model, such as Figure 3 As shown, the second anti-reflective layer 206 is in contact with the second baffle 205, that is, there is no gap between the second anti-reflective layer 206 and the second baffle 205.

[0074] Specifically, in some other embodiments of this invention, the second anti-reflective layer is integrally connected to the second baffle. The second anti-reflective layer is obtained by frosting the second baffle.

[0075] Specifically, in some other embodiments of this utility model, the second anti-reflective layer does not contact the second baffle, that is, there is a gap between the second anti-reflective layer and the second baffle.

[0076] Specifically, in some embodiments of this utility model, the second anti-reflection layer 206 is a micro-surface structure layer.

[0077] The micro-surface structure layer is adapted to diffusely reflect the reflected light formed by the reflection of the first baffle 203, so as to suppress the specular reflection of the reflected light on the surface of the second baffle 205.

[0078] Specifically, in some embodiments of this utility model, the second anti-reflective layer 206 is a light-absorbing coating.

[0079] The light-absorbing coating is adapted to absorb the reflected light formed by the reflection of the first baffle 203 to suppress the specular reflection of the reflected light on the surface of the second baffle 205.

[0080] Specifically, the projection range of the second anti-reflective layer 206 on the surface of the second baffle 205 surrounds the projection of the transmitter 201 on the surface of the second baffle 205.

[0081] The projection area of ​​the second anti-reflective layer 206 on the surface of the second baffle 205 surrounds the projection of the transmitter 201 on the surface of the second baffle 205. That is, the projection of the second anti-reflective layer 206 on the surface of the second baffle 205 completely covers the projection of the transmitter 201 on the surface of the second baffle 205, and the projection of the second anti-reflective layer 206 on the surface of the second baffle 205 is larger than the projection of the transmitter 201 on the surface of the second baffle 205. By setting the second anti-reflective layer 206 to this size, the reflected light received by the receiver 202 is reduced, preventing the receiver 202 from receiving overly complex light that would prevent it from correctly extracting the laser from the transmitter 201. This avoids incorrect feedback from the laser detection module to the machine, causing machine downtime, ensuring normal machine operation, and increasing machine operating time.

[0082] In other embodiments of this utility model, please refer to Figure 5 The anti-reflective layer is projected onto the surface of the baffle and coincides with the baffle. The anti-reflective layer is one of the first anti-reflective layer 204 and the second anti-reflective layer 206, and the baffle is one of the corresponding first baffle 203 and the second baffle 205.

[0083] That is, the projection of the first anti-reflection layer 204 onto the surface of the first baffle 203 coincides with the first baffle 203, or the projection of the second anti-reflection layer 206 onto the surface of the second baffle 205 coincides with the second baffle 205. The coincidence of the projection of the anti-reflection layer onto the baffle surface minimizes specular reflection of the laser on the baffle surface, thereby preventing the light received by the receiver 202 from being too complex, and thus preventing the laser detection module from giving incorrect feedback to the machine, causing machine downtime.

[0084] In some other embodiments of the present invention, the projection of the first anti-reflective layer 204 on the surface of the first baffle 203 coincides with the first baffle 203, and the projection of the second anti-reflective layer 206 on the surface of the second baffle 205 coincides with the second baffle 205.

[0085] The projection of the first anti-reflection layer 204 onto the surface of the first baffle 203 coincides with the first baffle 203, and the projection of the second anti-reflection layer 206 onto the surface of the second baffle 205 coincides with the second baffle 205. This suppresses the specular reflection of the laser on the surfaces of the first baffle 203 and the second baffle 205 as much as possible, thereby avoiding the light received by the receiver 202 being too complex, and thus avoiding the laser detection module giving incorrect feedback to the machine, causing the machine to stop.

[0086] In summary, the first anti-reflection layer is disposed between the first baffle and the receiving end, and is suitable for suppressing specular reflection of the laser on the surface of the first baffle. By providing the first anti-reflection layer, laser light that is scattered and diffusely reflected at the wafer surface is prevented from incident on the first baffle and then specularly reflected to the receiving end. This avoids overly complex light received by the receiving end, allowing the receiving end to determine the wafer's position based on the laser light received from the transmitting end. This prevents the laser detection module from providing incorrect feedback to the machine, causing machine downtime, ensuring normal machine operation, and increasing machine uptime. Furthermore, since the first anti-reflection layer is disposed between the first baffle and the receiving end, the cost of installing or replacing the first anti-reflection layer is low, and the detection accuracy of the laser detection module can be significantly improved without major modifications. This avoids situations where the wafer is immersed in the cleaning tank for extended periods due to machine downtime, leading to wafer scrap, and improves wafer yield.

[0087] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the present invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A cleaning machine, characterized in that, include: A cleaning tank containing wafers; A robotic arm adapted to grasp and transport the wafer; A laser detection module, comprising a transmitter and a receiver, wherein the transmitter is located on one side of the cleaning tank and the receiver is located on the other side of the cleaning tank, and the optical path between the transmitter and the receiver corresponds to the position of the wafer grasped by the robotic arm; A first baffle is located on the side of the receiver away from the transmitter. A first anti-reflection layer is disposed between the first baffle and the receiving end, and the first anti-reflection layer is adapted to suppress specular reflection of the laser.

2. The cleaning machine as described in claim 1, characterized in that, The first anti-reflective layer is a micro-surface structure layer.

3. The cleaning machine as described in claim 1, characterized in that, The first anti-reflective layer is a light-absorbing coating.

4. The cleaning machine as described in claim 1, characterized in that, The first anti-reflective layer is made of a different material than the first baffle; or, the first anti-reflective layer is integrally connected to the first baffle.

5. The cleaning machine as described in claim 1, characterized in that, The projection range of the first anti-reflective layer on the surface of the first baffle surrounds the projection of the receiving end on the surface of the first baffle.

6. The cleaning machine as described in claim 1, characterized in that, Also includes: A second baffle is located on the side of the transmitter away from the receiver; a second anti-reflective layer is disposed between the second baffle and the transmitter.

7. The cleaning machine as described in claim 6, characterized in that, The projection range of the second anti-reflective layer on the surface of the second baffle surrounds the projection of the transmitting end on the surface of the second baffle.

8. The cleaning machine as described in claim 6, characterized in that, The second anti-reflective layer is a micro-surface structure layer.

9. The cleaning machine as described in claim 6, characterized in that, The second anti-reflective layer is a light-absorbing coating.

10. The cleaning machine as described in claim 1, characterized in that, The projection of the anti-reflective layer on the surface of the baffle coincides with the baffle. The anti-reflective layer is one of the first anti-reflective layer and the second anti-reflective layer, and the baffle is one of the corresponding first baffle and the second baffle.

11. The cleaning machine as described in claim 1, characterized in that, The receiving end is adapted to convert the received laser into an electrical signal; The cleaning machine also includes a control module, which is adapted to obtain the position information of the wafer grasped by the robotic arm based on the electrical signal.

Images