Vacuum mechanism of silicon carbide single crystal growth furnace

Abstract

The utility model relates to a vacuum mechanism of a silicon carbide single crystal growth furnace, which comprises a rectangular bottom plate, the top of the rectangular bottom plate is fixedly connected with a growth furnace body, and the top of the rectangular bottom plate is arranged. According to the vacuum mechanism of the silicon carbide single crystal growth furnace, by arranging the vacuum partition mechanism, when the vacuum machine is replaced, the environment in the growth furnace can still be in a vacuum state, and the problems that when the vacuum machine is damaged and needs to be replaced, the whole mechanism needs to be stopped generally, crystals in the growth furnace cannot be ensured to be in a vacuum state, and the production cost is low are solved. And the time for replacing the vacuum machine is usually long, so that other gases are injected into the growth furnace during the replacement of the vacuum machine, the growth of crystals is influenced, the disqualification probability of the crystals is increased, the production quality of a production line is reduced, and the environment in the growth furnace cannot be ensured to be in a vacuum state, and the growth time of the crystals is also increased. And the production efficiency is reduced.

Description

Technical Field

[0001] This utility model relates to the field of crystal growth technology, specifically to the vacuum mechanism of a silicon carbide single crystal growth furnace. Background Technology

[0002] Silicon carbide, as a third-generation semiconductor material, possesses superior physical and electrical properties such as a wide bandgap, high breakdown electric field, and high electron mobility. It is particularly suitable for manufacturing high-temperature, high-frequency, high-power, radiation-resistant, short-wavelength light-emitting, and optoelectronic integrated devices. Therefore, it is widely used in many high-tech fields such as aviation, aerospace, radar, and communications. In the entire semiconductor wafer manufacturing process, single crystal growth is the most critical step, and the vacuum mechanism is one of the key components to ensure the quality of silicon carbide single crystal growth.

[0003] However, when the vacuum mechanism of the existing silicon carbide single crystal growth furnace is damaged and needs to be replaced, the entire mechanism usually needs to be stopped. This cannot guarantee that the crystal inside the growth furnace is in a vacuum state. Moreover, the replacement time of the vacuum machine is usually long. This will cause other gases to be injected into the growth furnace during the replacement period, which will affect the crystal growth, increase the probability of crystal defects, reduce the production quality of the production line, and the environment inside the growth furnace cannot be guaranteed to be in a vacuum state, which will also increase the crystal growth time and reduce production efficiency.

[0004] Therefore, a vacuum mechanism for silicon carbide single crystal growth furnace is proposed to solve the problems mentioned above. Utility Model Content

[0005] To address the shortcomings of existing technologies, this invention provides a vacuum mechanism for a silicon carbide single crystal growth furnace. By setting up a vacuum isolation mechanism, the environment inside the growth furnace can still be maintained in a vacuum state when the vacuum machine is replaced. This solves the problems that when the vacuum machine is damaged and needs to be replaced, the entire mechanism usually needs to be stopped, making it impossible to guarantee that the crystal inside the growth furnace is in a vacuum state. Moreover, the replacement time of the vacuum machine is usually long, which can lead to other gases being injected into the growth furnace during the replacement period, affecting crystal growth, increasing the probability of crystal defects, reducing the production quality of the production line, and increasing the crystal growth time and reducing production efficiency due to the inability to guarantee a vacuum state inside the growth furnace.

[0006] To achieve the above objectives, this utility model provides the following technical solution: it includes a rectangular base plate, a growth furnace body is fixedly connected to the top of the rectangular base plate, a vacuum machine is provided on the top of the rectangular base plate, a square pipe is connected to the side of the vacuum machine, a square pipe is connected to the side of the growth furnace body, the square pipe is connected to the square pipe, the square pipe is connected to the square pipe, a baffle plate is fixedly connected to the inner wall of the square pipe, and a vent is provided on the surface of the baffle plate;

[0007] The square pipe 2 is equipped with a vacuum isolation mechanism through the vent. The vacuum isolation mechanism includes a guide rail 1, a cover plate, a connecting plate 1, a baffle 1, a baffle 2, a slide rod, a positioning plate, and a spring.

[0008] A fixing plate is fixedly connected to the side of the square pipe 2, and a disassembly assembly is provided on the square pipe 2 through the fixing plate.

[0009] Preferably, the guide rail one is located inside the square pipe two, the bottom of the guide rail one is fixedly connected to the inner bottom wall of the square pipe two, the bottom of the cover plate is slidably connected to the inner wall of the guide rail one, and the cover plate is adapted to the vent.

[0010] Preferably, one side of the connecting plate is fixedly connected to the side of the cover plate, the other side of the connecting plate passes through the side of the square pipe and is slidably connected to the square pipe, and the side of the baffle is fixedly connected to the side of the connecting plate.

[0011] Preferably, the top of the second baffle is fixedly connected to the bottom of the first baffle, the top of the sliding rod passes through the bottom of the second baffle and is slidably connected to the second baffle, and the top of the sliding rod passes through the bottom of the first baffle and is slidably connected to the first baffle.

[0012] Preferably, the side of the positioning plate is fixedly connected to the side of the second square pipe, the top of the slide rod extends into the positioning plate and is slidably connected to the positioning plate, the spring is sleeved on the outer wall of the slide rod, one end of the spring is fixedly connected to the inner bottom wall of the second baffle, and the other end of the spring is fixedly connected to the outer wall of the slide rod.

[0013] Preferably, the disassembly assembly includes a second guide rail fixedly connected to the other end of the fixed plate. The second guide rail is located on the side of the first square pipe and the second square pipe. The upper and lower ends of the second guide rail are both fixedly connected to a second connecting plate.

[0014] Preferably, at least two movable plates are slidably connected to the inner wall of the fixed plate. The two movable plates are symmetrically distributed. The movable plates are in contact with the sides of the first square pipe and the second square pipe. A bidirectional threaded rod passes through the top of the second connecting plate. The bidirectional threaded rod is rotatably connected to the second connecting plate. The bidirectional threaded rod passes through the two movable plates and is threadedly connected to the two movable plates.

[0015] Compared with the prior art, this utility model provides a vacuum mechanism for a silicon carbide single crystal growth furnace, which has the following beneficial effects:

[0016] 1. The vacuum mechanism of this silicon carbide single crystal growth furnace, when performing vacuum isolation on the growth furnace body, pulls the sliding rod away from the positioning plate and then pulls the connecting plate to drive the cover plate to cover the vent, preventing gas from entering the growth furnace body from the vent and affecting the crystal growth inside the growth furnace body, thereby improving product quality.

[0017] 2. The vacuum mechanism of this silicon carbide single crystal growth furnace is easy to replace. When replacing the vacuum machine, simply turn the double-threaded rod to move the two moving plates away from between square pipe one and square pipe two, and then remove and replace the vacuum machine. This operation is convenient, reduces the time required to replace the vacuum machine, and allows the equipment to be put into production as soon as possible. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the overall structure of this utility model;

[0019] Figure 2 This is a side sectional view of the structure of this utility model;

[0020] Figure 3 This is a partial cross-sectional structural diagram of the vacuum isolation mechanism of this utility model;

[0021] Figure 4 This utility model Figure 3 A magnified schematic diagram of the structure of A in the middle.

[0022] In the diagram: 1. Rectangular base plate; 2. Growth furnace body; 3. Vacuum machine; 4. Square pipe one; 5. Square pipe two; 6. Baffle plate; 7. Vent; 8. Guide rail one; 9. Cover plate; 10. Connecting plate one; 11. Baffle one; 12. Baffle two; 13. Slide rod; 14. Positioning plate; 15. Spring; 16. Fixing plate; 17. Guide rail two; 18. Connecting plate two; 19. Moving plate; 20. Two-way threaded rod. Detailed Implementation

[0023] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0024] Example:

[0025] Please see Figure 1 - Figure 4The vacuum mechanism of the silicon carbide single crystal growth furnace in this embodiment includes a rectangular base plate 1, a growth furnace body 2 fixedly connected to the top of the rectangular base plate 1, a vacuum machine 3 provided on the top of the rectangular base plate 1, a square pipe 4 connected to the side of the vacuum machine 3, a square pipe 5 connected to the side of the growth furnace body 2, the square pipe 5 being connected to the square pipe 4, a baffle plate 6 fixedly connected to the inner wall of the square pipe 4, and a vent 7 opened on the surface of the baffle plate 6.

[0026] The square pipe 25 is equipped with a vacuum isolation mechanism through the vent 7. The vacuum isolation mechanism includes a guide rail 18, a cover plate 9, a connecting plate 10, a baffle 11, a baffle 2 12, a slide rod 13, a positioning plate 14, and a spring 15.

[0027] A fixing plate 16 is fixedly connected to the side of the square pipe 2 5, and a disassembly assembly is provided on the square pipe 2 5 through the fixing plate 16;

[0028] When replacing the vacuum machine 3, firstly, the fixing between square pipe 4 and square pipe 5 is released by disassembling the components. Then, the sliding rod 13 is pulled. After the sliding rod 13 leaves the positioning plate 14, the connecting plate 10 is pulled. Under the action of the vacuum isolation mechanism, the cover plate 9 will move. After the cover plate 9 blocks the vent 7, the sliding rod 13 is released and fixed in the positioning plate 14. At this time, the position of the cover plate 9 will be fixed to prevent gas from entering the growth furnace body 2 through the vent 7, thus isolating the environment inside the growth furnace body 2. Then, the square pipe 4 and square pipe 5 are separated, and the vacuum machine 3 can be replaced.

[0029] At this time, when replacing the vacuum machine 3, the environment inside the growth furnace body 2 is protected, ensuring that the environment inside the growth furnace body 2 remains in a vacuum state. When replacing the vacuum machine 3, the crystals inside the growth furnace body 2 are also in a vacuum state, which will not affect the growth. This avoids other gases entering the growth furnace body 2 and affecting the crystals inside the growth furnace body 2, reducing the problem of the crystals inside the growth furnace body 2 failing to meet the qualification rate due to the influence of other gases, thus improving product quality. At the same time, when replacing the vacuum machine 3, the environment inside the growth furnace body 2 remains in a vacuum state, which will not affect the crystal growth, will not increase the product's processing time, and improves work efficiency.

[0030] The guide rail 1 8 is located inside the square pipe 2 5. The bottom of the guide rail 1 8 is fixedly connected to the inner bottom wall of the square pipe 2 5. The bottom of the cover plate 9 is slidably connected to the inner wall of the guide rail 1 8. The cover plate 9 is adapted to the vent 7.

[0031] One side of the connecting plate 10 is fixedly connected to the side of the cover plate 9, and the other side of the connecting plate 10 passes through the side of the square pipe 2 5 and is slidably connected to the square pipe 2 5. The side of the baffle 11 is fixedly connected to the side of the connecting plate 10.

[0032] The top of the second baffle 12 is fixedly connected to the bottom of the first baffle 11. The top of the sliding rod 13 passes through the bottom of the second baffle 12 and is slidably connected to the second baffle 12. The top of the sliding rod 13 passes through the bottom of the first baffle 11 and is slidably connected to the first baffle 11.

[0033] The side of the positioning plate 14 is fixedly connected to the side of the square pipe 2 5. The top of the slide rod 13 extends into the positioning plate 14 and is slidably connected to the positioning plate 14. The spring 15 is sleeved on the outer wall of the slide rod 13. One end of the spring 15 is fixedly connected to the inner bottom wall of the baffle 2 12, and the other end of the spring 15 is fixedly connected to the outer wall of the slide rod 13.

[0034] When performing vacuum isolation treatment on the growth furnace body 2, firstly, pull the slide rod 13 downwards. At this time, the spring 15 is in a taut state. After the slide rod 13 leaves the positioning plate 14, pull the connecting plate 10. At this time, because the connecting plate 10 and the cover plate 9 are fixed, under the limiting action of the guide rail 8 on the cover plate 9, pulling the connecting plate 10 will drive the cover plate 9 to move on the guide rail 8. When the cover plate 9 moves to the position of covering the vent 7, release the slide rod 13. Under the reset action of the spring 15, the slide rod 13 will be locked into the positioning plate 14 to fix the position of the cover plate 9. At this time, the cover plate 9 has covered the vent 7 on the shielding plate 6, and the gas will not enter the growth furnace body 2 through the vent 7.

[0035] At this time, the environment inside the growth furnace body 2 is vacuum isolated, so that the environment inside the growth furnace body 2 is in a vacuum state. When the vacuum machine 3 is replaced, it will not affect the growth of crystals inside the growth furnace body 2, and reduce the impact of other gases on the growth of crystals inside the growth furnace body 2.

[0036] The disassembly assembly includes a guide rail 2 17 fixedly connected to the other end of the fixing plate 16. The guide rail 2 17 is located on the side of the square pipe 1 4 and the square pipe 2 5. The upper and lower ends of the guide rail 2 17 are fixedly connected to the connecting plate 2 18.

[0037] At least two movable plates 19 are slidably connected to the inner wall of the fixed plate 16. The two movable plates 19 are symmetrically distributed. The movable plates 19 are in contact with the sides of the square pipe 4 and the square pipe 5. A bidirectional threaded rod 20 passes through the top of the connecting plate 2 18. The bidirectional threaded rod 20 is rotatably connected to the connecting plate 2 18. The bidirectional threaded rod 20 passes through the two movable plates 19 and is threadedly connected to the two movable plates 19.

[0038] When replacing the vacuum machine 3, first turn the double-threaded rod 20. Since the two moving plates 19 are threadedly connected to the double-threaded rod 20, under the limiting action of the guide rail 2 17 on the moving plates 19, the two moving plates 19 will move away from each other due to the rotation of the double-threaded rod 20, leaving the square pipe 1 4 and square pipe 2 5. At this time, the fixation of the square pipe 1 4 and square pipe 2 5 is released, and the square pipe 1 4 and square pipe 2 5 are separated. Replace the vacuum machine 3. After the replacement is completed, align the square pipe 1 4 with the square pipe 2 5, and turn the double-threaded rod 20. Under the limiting action of the guide rail 2 17 on the moving plates 19, the two moving plates 19 will move closer to each other due to the rotation of the double-threaded rod 20 until the two moving plates 19 contact the square pipe 1 4 and square pipe 2 5, and fix the position of the square pipe 1 4 and square pipe 2 5.

[0039] At this point, vacuum machine 3 was quickly replaced without complicated operations, reducing the replacement time and allowing the equipment to be put into production as soon as possible, thus increasing the production speed.

[0040] The installation, connection, or setting methods disclosed in this embodiment are all common mechanical connection methods. As long as they can achieve their beneficial effects, they can be implemented. Therefore, this embodiment will not elaborate on their specific structural composition and working principle.

Claims

1. A vacuum mechanism for a silicon carbide single crystal growth furnace, comprising a rectangular base plate (1), characterized in that: The top of the rectangular base plate (1) is fixedly connected to the growth furnace body (2), and a vacuum machine (3) is provided on the top of the rectangular base plate (1). A square pipe (4) is connected to the side of the vacuum machine (3), and a square pipe (5) is connected to the side of the growth furnace body (2). The square pipe (5) is connected to the square pipe (4), and a baffle plate (6) is fixedly connected to the inner wall of the square pipe (5). A vent (7) is opened on the surface of the baffle plate (6). The square pipe 2 (5) is provided with a vacuum isolation mechanism through the air vent (7). The vacuum isolation mechanism includes a guide rail 1 (8), a cover plate (9), a connecting plate 1 (10), a baffle 1 (11), a baffle 2 (12), a slide rod (13), a positioning plate (14), and a spring (15). A fixing plate (16) is fixedly connected to the side of the square pipe 2 (5), and a disassembly assembly is provided on the square pipe 2 (5) through the fixing plate (16).

2. The vacuum mechanism of the silicon carbide single crystal growth furnace according to claim 1, characterized in that: The guide rail (8) is located inside the square pipe (5). The bottom of the guide rail (8) is fixedly connected to the inner bottom wall of the square pipe (5). The bottom of the cover plate (9) is slidably connected to the inner wall of the guide rail (8). The cover plate (9) is adapted to the vent (7).

3. The vacuum mechanism of the silicon carbide single crystal growth furnace according to claim 2, characterized in that: One side of the connecting plate (10) is fixedly connected to the side of the cover plate (9), and the other side of the connecting plate (10) passes through the side of the square pipe (5) and is slidably connected to the square pipe (5). The side of the baffle (11) is fixedly connected to the side of the connecting plate (10).

4. The vacuum mechanism of the silicon carbide single crystal growth furnace according to claim 3, characterized in that: The top of the second baffle (12) is fixedly connected to the bottom of the first baffle (11). The top of the sliding rod (13) passes through the bottom of the second baffle (12) and is slidably connected to the second baffle (12). The top of the sliding rod (13) passes through the bottom of the first baffle (11) and is slidably connected to the first baffle (11).

5. The vacuum mechanism of the silicon carbide single crystal growth furnace according to claim 4, characterized in that: The side of the positioning plate (14) is fixedly connected to the side of the square pipe (5). The top of the slide rod (13) extends into the positioning plate (14) and is slidably connected to the positioning plate (14). The spring (15) is sleeved on the outer wall of the slide rod (13). One end of the spring (15) is fixedly connected to the inner bottom wall of the baffle (12), and the other end of the spring (15) is fixedly connected to the outer wall of the slide rod (13).

6. The vacuum mechanism of the silicon carbide single crystal growth furnace according to claim 1, characterized in that: The disassembly assembly includes a second guide rail (17) fixedly connected to the other end of the fixed plate (16). The second guide rail (17) is located on the side of the first square pipe (4) and the second square pipe (5). The upper and lower ends of the second guide rail (17) are fixedly connected to a second connecting plate (18).

7. The vacuum mechanism of the silicon carbide single crystal growth furnace according to claim 6, characterized in that: At least two movable plates (19) are slidably connected to the inner wall of the fixed plate (16). The two movable plates (19) are symmetrically distributed. The movable plates (19) are in contact with the sides of the square pipe one (4) and the square pipe two (5). A bidirectional threaded rod (20) passes through the top of the connecting plate two (18). The bidirectional threaded rod (20) is rotatably connected to the connecting plate two (18). The bidirectional threaded rod (20) passes through the two movable plates (19) and is threadedly connected to the two movable plates (19).

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