Graphene wafer batch preparation device

Abstract

The utility model relates to a graphene wafer batch preparation device which is used for depositing and growing graphene on the surface of a wafer and comprises a furnace body, a carrier, an air inlet flange, a first air uniformizing assembly and a heat blocking assembly, the furnace body is provided with an air inlet end, an air exhaust end and a furnace cavity communicating with the air inlet end and the air exhaust end, and the carrier is arranged in the furnace cavity and used for containing a plurality of wafer substrates; the first gas uniformizing assembly is arranged in the furnace cavity and located between the gas inlet flange and the carrier, the heat blocking assembly is arranged in the furnace cavity and located between the carrier and the gas exhaust end of the furnace body, and the heat blocking assembly is used for increasing the temperature of the portion, close to the gas exhaust end, of the carrier. The gas inlet flange is matched with the first gas uniformizing assembly, so that gas can uniformly flow to the carrier, graphene with good layer number and surface thickness uniformity can be more easily generated, the heat blocking assembly can increase the temperature of the carrier close to the gas exhaust end, carbon source gas is more fully cracked, and the uniformity of the growth thickness of the graphene in the gas flowing direction is ensured.

Description

Technical Field

[0001] This application relates to the field of graphene preparation technology, specifically to a device for mass production of graphene wafers. Background Technology

[0002] Currently, the large-scale production of graphene using chemical vapor deposition (CVD) faces severe challenges. One problem is the uneven distribution of reactant gases within the reaction chamber. For example, when traditional CVD equipment is used to deposit and grow graphene on multiple wafers, the uneven distribution of reactant gases leads to a decrease in gas concentration at the edge of the reaction chamber, which severely affects the uniformity of graphene growth. In addition, as the carbon source gas is decomposed and consumed, the concentration of active carbon species near the exhaust end is lower than that at the inlet end, resulting in uneven graphene growth thickness along the direction of carbon source gas flow. Utility Model Content

[0003] The purpose of this application is to solve the technical problem that uneven distribution of reactant gases within the reaction chamber during existing graphene preparation processes leads to a decrease in gas concentration at the chamber edges, severely affecting the uniformity of graphene growth and reducing the concentration of active carbon species, resulting in uneven graphene growth. This objective is achieved through the following technical solution:

[0004] This application provides a graphene wafer mass production apparatus for depositing and growing graphene on the surface of a wafer. The graphene wafer mass production apparatus includes a furnace body, a carrier, an inlet flange, a first gas equalization component, and a heat shield component. The furnace body has an inlet end, an exhaust end, and a furnace cavity communicating with both the inlet end and the exhaust end. The carrier is disposed in the furnace cavity and is used to place several wafer substrates. The inlet flange is disposed at the inlet end of the furnace body and is used to uniformly introduce gas into the furnace cavity. The first gas equalization component is disposed in the furnace cavity and is located between the inlet flange and the carrier. The first gas equalization component is used to equalize the flow of gas. The heat shield component is disposed in the furnace cavity and is located between the carrier and the exhaust end of the furnace body. The heat shield component is used to increase the temperature of the carrier near the exhaust end.

[0005] When the graphene wafer mass production apparatus of this application is used, the carbon source gas enters the furnace cavity uniformly from the gas inlet flange at the gas inlet end. The first gas equalization component equalizes the flow of the carbon source gas, making it uniformly mixed before flowing to the carrier for reaction. The uniformity of the reaction gas makes it easier to generate graphene with good uniformity in number of layers and surface thickness on the wafer substrate. The heat shield component can increase the temperature of the carrier near the gas extraction end, increase the degree of decomposition of the carbon source gas near the gas extraction end, and increase the content of active carbon species, thereby ensuring the uniformity of graphene growth thickness along the gas flow direction.

[0006] In some embodiments, the air inlet flange includes a flange body, an air inlet channel, and an air inlet. The flange body is disposed at the air inlet end of the furnace body. The flange body is provided with at least two air injection ports for injecting at least two different gases into the furnace cavity. The air inlet channel is opened inside the flange body and communicates with the air injection ports. The air inlet extends radially along the flange body. Multiple air inlets are provided and the multiple air inlets are evenly arranged circumferentially along the flange body. The air inlet communicates with the air inlet channel and the central cavity of the flange body.

[0007] In some embodiments, the air intake channel includes a first air passage and a second air passage. The first air passage is opened along the circumference of the flange body and is connected to the air injection port. The second air passage is opened in a fan shape along the circumference of the flange body. Multiple second air passages are provided and are spaced apart along the circumference of the flange body. The multiple second air passages are connected to the first air passage, and each second air passage is connected to at least one air intake port.

[0008] In some embodiments, the intake flange further includes a cooling water passage disposed on the flange body, and the flange body is provided with two water passage connectors connected to the cooling water passage.

[0009] In some embodiments, the first gas equalization component includes a first gas equalization disk and a second gas equalization disk, the first gas equalization disk and the second gas equalization disk are stacked and spaced apart along the gas flow direction, the first gas equalization disk is provided with a plurality of uniformly distributed first holes, the second gas equalization disk is provided with a plurality of uniformly distributed second holes, and the first holes and the second holes are staggered along the gas flow direction.

[0010] In some embodiments, the bottom of the first air distribution plate and the bottom of the second air distribution plate are provided with corresponding and communicating first mating holes. The first mating holes are used to dock with the conveying component to realize the automatic transfer of the first air distribution component and the carrier.

[0011] In some embodiments, the heat-blocking assembly includes a plurality of heat-blocking plates, and the plurality of heat-blocking plates are spaced apart along the gas flow direction.

[0012] In some embodiments, the graphene wafer mass production apparatus further includes a second gas equalization component, which is disposed between the carrier and the heat shield component.

[0013] In some embodiments, the second gas equalization component includes a third gas equalization disk and a fourth gas equalization disk, the third gas equalization disk and the fourth gas equalization disk are stacked and spaced apart along the gas flow direction, the third gas equalization disk is provided with a plurality of uniformly distributed third holes, the fourth gas equalization disk is provided with a plurality of uniformly distributed fourth holes, and the third holes and the fourth holes are staggered along the gas flow direction.

[0014] In some embodiments, the wafer substrate is placed vertically on the carrier. Attached Figure Description

[0015] Various other advantages and benefits will become apparent to those skilled in the art upon reading the following detailed description of preferred embodiments. The accompanying drawings are for illustrative purposes only and are not intended to limit the scope of this application. Furthermore, the same reference numerals denote the same parts throughout the drawings. In the drawings:

[0016] Figure 1 This is a schematic diagram of the overall structure of a graphene wafer mass production apparatus according to an embodiment of this application;

[0017] Figure 2 This is a three-dimensional structural schematic diagram of a first gas equalization component according to an embodiment of this application;

[0018] Figure 3 This is a front view of a first air-regulating component according to an embodiment of this application;

[0019] Figure 4 This is a left view of a first air equalization component according to an embodiment of this application;

[0020] Figure 5 This is a schematic diagram of the structure of the second gas equalization disk in the first gas equalization component according to an embodiment of this application;

[0021] Figure 6 This is a front view of the intake flange according to an embodiment of this application;

[0022] Figure 7 This is a three-dimensional structural diagram of an intake flange according to an embodiment of this application;

[0023] Figure 8 for Figure 7 A magnified view of a portion of point A in the middle;

[0024] Figure 9 This is a three-dimensional structural schematic diagram of the second gas equalization component according to an embodiment of this application;

[0025] Figure 10 This is a front view of a second air-regulating component according to an embodiment of this application;

[0026] Figure 11This is a left view of a second air equalization component according to an embodiment of this application;

[0027] Figure 12 This is a schematic diagram of the structure of the fourth gas equalization disk in the second gas equalization component according to an embodiment of this application;

[0028] Figure 13 This is a three-dimensional structural schematic diagram of a heat-blocking component according to an embodiment of this application;

[0029] Figure 14 This is a front view of a heat shield assembly according to an embodiment of this application.

[0030] Explanation of reference numerals in the attached figures:

[0031] 10. Furnace body; 11. Furnace cavity;

[0032] 20. Vehicles;

[0033] 30. First gas equalization component; 31. First gas equalization disc; 311. First hole; 312. First mating hole; 32. Second gas equalization disc; 321. Second hole; 33. First connecting part;

[0034] 40. Inlet flange; 41. Flange body; 411. Air inlet; 412. Inlet passage; 4121. First air passage; 4122. Second air passage; 413. Inlet port; 414. Central cavity; 42. Water connector;

[0035] 50. Second gas equalization component; 51. Third gas equalization plate; 511. Third hole; 512. Second mating hole; 52. Fourth gas equalization plate; 521. Fourth hole; 53. Second connecting part;

[0036] 60. Heat shield assembly; 61. Heat shield plate; 62. Third connecting part; 63. Third mating hole;

[0037] 70. Evacuation flange. Detailed Implementation

[0038] Exemplary embodiments of the present disclosure will now be described in more detail with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be implemented in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.

[0039] It should be understood that the terminology used herein is for the purpose of describing particular exemplary embodiments only and is not intended to be limiting. Unless the context clearly indicates otherwise, the singular forms “a,” “an,” and “described” as used herein may also mean including the plural forms. The terms “comprising,” “including,” and “having” are inclusive and therefore indicate the presence of the stated features, elements, and / or components, but do not exclude the presence or addition of one or more other features, elements, components, and / or combinations thereof.

[0040] Furthermore, in the description of this application, unless otherwise expressly specified and limited, the terms "setup" and "connection" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0041] For ease of description, spatial relative terms may be used in the text to describe the relationship of one element or feature relative to another element or feature, as shown in the figure. These relative terms include, for example, "above," "below," "inner," "outer," "end," "side," etc. Such spatial relative terms are intended to include different orientations of the mechanism in use or operation, in addition to those depicted in the figure. For example, if the mechanism in the figure is flipped, then an element described as "below other elements or features" or "below other elements or features" will subsequently be oriented as "above other elements or features" or "above other elements or features." Therefore, the example term "below" can include both upper and lower orientations. The mechanism may be otherwise oriented (rotated 90 degrees or in other directions), and the spatial relative descriptors used in the text will be interpreted accordingly.

[0042] like Figure 1 and Figure 2As shown in the embodiment of this utility model, a graphene wafer mass production apparatus is disclosed for depositing and growing graphene on the surface of a wafer. The graphene wafer mass production apparatus includes a furnace body 10, a carrier 20, an air inlet flange 40, a first gas equalization component 30, and a heat shield component 60. The furnace body 10 has an air inlet end, an air extraction end, and a furnace cavity 11 communicating with both the air inlet end and the air extraction end. The carrier 20 is disposed in the furnace cavity 11 and is used to place the wafer substrate. A gas flange 40 is disposed at the gas inlet end of the furnace body 10. The gas inlet flange 40 is used to uniformly introduce gas into the furnace cavity 11. A first gas equalization component 30 is disposed in the furnace cavity 11. The first gas equalization component 30 is located between the gas inlet flange 40 and the carrier 20. The first gas equalization component 30 is used to equalize the flow of gas. A heat shield component 60 is disposed in the furnace cavity 11. The heat shield component 60 is located between the carrier 20 and the gas extraction end of the furnace body 10. The heat shield component 60 is used to increase the temperature of the carrier 20 near the gas extraction end.

[0043] When the graphene wafer mass production apparatus of this application is used, carbon source gas is uniformly introduced into the furnace chamber 11 from the gas inlet flange 40 at the gas inlet end. The first gas uniform component 30 uniformly mixes the flowing carbon source gas to make it uniform before it flows to the carrier 20 for reaction. The uniformity of the reaction gas makes it easier to generate graphene with good uniformity of layer number and surface thickness on the wafer substrate. The setting of the heat shield component 60 can reduce the heat loss of the carrier 20 near the gas extraction end, thereby increasing the temperature of the carrier 20 near the gas extraction end, increasing the degree of decomposition of the carbon source gas near the gas extraction end, increasing the content of active carbon species, thereby ensuring the uniformity of graphene growth thickness along the gas flow direction.

[0044] It should be noted that the heat shield 60 of this application is only disposed on the side of the carrier 20 near the exhaust end, and not on the side of the carrier 20 near the intake end. In existing graphene growth equipment, along the gas flow direction, as the reaction proceeds, the carbon source gas concentration on the side of the carrier 20 near the exhaust end is lower than that on the side of the carrier 20 near the intake end. This results in the graphene growth thickness on the side of the carrier 20 near the intake end being greater than that on the side of the carrier 20 near the exhaust end, leading to uneven graphene growth thickness. This application provides a heat-insulating component 60 on the side of the carrier 20 near the exhaust end to keep the side of the carrier 20 near the exhaust end warm, thereby increasing the temperature of the side of the carrier 20 near the exhaust end to be higher than the temperature of the side of the carrier 20 near the intake end. This increases the degree of carbon source gas decomposition on the side of the carrier 20 near the exhaust end, increases the content of active carbon species, and reduces the concentration difference of active carbon species between the side of the carrier 20 near the exhaust end and the side near the intake end, thus ensuring the uniformity of graphene growth thickness along the gas flow direction.

[0045] like Figure 1 , Figures 6 to 8As shown, in some embodiments, the air inlet flange 40 includes a flange body 41, an air inlet channel 412, and an air inlet 413. The flange body 41 is disposed at the air inlet end of the furnace body 10. The flange body 41 is provided with at least two air injection ports 411 for injecting at least two different gases into the furnace cavity 11. The air inlet channel 412 is opened inside the flange body 41 and is connected to the air injection port 411. The air inlet 413 extends radially along the flange body 41. Multiple air inlets 413 are provided and are evenly arranged circumferentially along the flange body 41. The air inlet 413 is connected to the air inlet channel 412 and the central cavity 414 of the flange body 41. The central cavity 414 is connected to the furnace cavity 11.

[0046] The flange body 41 in this application adopts a collaborative design of gas injection port 411 and gas inlet channel 412, and multiple gas inlets 413 evenly distributed radially around the perimeter. This allows the gas to be initially mixed in the gas inlet channel 412 after entering from the gas injection port 411, and then slowly dispersed through the multiple gas inlets 413 evenly arranged circumferentially to form a stable diffused airflow, effectively avoiding local turbulence and improving the uniformity of airflow distribution before entering the furnace cavity 11.

[0047] In some embodiments, the air intake channel 412 includes a first air passage 4121 and a second air passage 4122. The first air passage 4121 is opened along the circumference of the flange body 41 and is connected to the air injection port 411. The second air passage 4122 is opened in a fan shape along the circumference of the flange body 41. Multiple second air passages 4122 are provided and are spaced apart along the circumference of the flange body 41. The multiple second air passages 4122 are connected to the first air passage 4121, and each second air passage 4122 is connected to at least one air inlet 413.

[0048] The first gas passage 4121 facilitates the flow of injected gas, while the second gas passage 4122 enables the initial diversion of gas. This facilitates the distribution of gas along each second gas passage 4122. The distributed gas flows into the central cavity 414 of the flange body 41 through the inlet 413 and then into the furnace cavity 11. In other words, the gas gradually diffuses and flows into the furnace cavity 11 along the first gas passage 4121 → second gas passage 4122 → inlet 413 → central cavity 414 of the flange body 41 → furnace cavity 11, thereby improving the uniformity of gas intake.

[0049] like Figure 6 , Figure 7 , Figure 8As shown, in this embodiment, two gas injection ports 411 are provided. One gas injection port 411 is used to inject carbon source gas, and the other gas injection port 411 is used to inject inert gas. The inert gas can prevent the carbon source gas from being oxidized. However, it is not limited to this. For example, in other embodiments, the gas injection ports 411 can also be set to three or more as needed, with one gas injection port 411 used to inject inert gas and the remaining gas injection ports 411 used to inject carbon source gas to improve gas injection efficiency.

[0050] Specifically, the second air passage 4122 is a non-through fan-shaped section air passage arranged circumferentially along the flange body 41. Eight second air passages 4122 can be spaced apart along the circumference of the flange body 41, each connecting to two air inlets 413, for a total of sixteen air inlets 413 evenly distributed circumferentially along the flange body 41, thus improving air intake efficiency. However, this is not a limitation; in other embodiments, the number of second air passages 4122 and air inlets 413 can be set as needed.

[0051] In some embodiments, the intake flange 40 further includes a cooling water passage disposed on the flange body 41, and the flange body 41 is provided with two water passage connectors 42 connected to the cooling water passage.

[0052] The cooling water circuit provided in the intake flange 40 can cool the intake flange 40, reduce the temperature of the intake flange 40, avoid excessive temperature at the intake flange 40, and ensure the stability of the carbon source gas at this location.

[0053] Specifically, the cooling water passage can be a cooling chamber opened inside the flange body 41. Coolant is injected into the cooling chamber through a water passage connector 42, and the coolant in the cooling chamber is returned through another water passage connector 42.

[0054] The first gas equalization component 30 includes a first gas equalization disk 31 and a second gas equalization disk 32, wherein the first gas equalization disk 31 and the second gas equalization disk 32 are stacked and spaced apart along the gas flow direction, the first gas equalization disk 31 is provided with a plurality of uniformly distributed first holes 311, and the second gas equalization disk 32 is provided with a plurality of uniformly distributed second holes 321, and the first holes 311 and the second holes 321 are staggered along the gas flow direction.

[0055] When the gas flows through the first gas equalization component 30, it first flows through the multiple first holes 311 of the first gas equalization disk 31 to achieve preliminary gas mixing and uniform flow. Since the first holes 311 and the second holes 321 are staggered along the gas flow direction, the direction of the gas flow changes when it flows to the second hole 321 of the second gas equalization disk 32, which is conducive to gas disturbance and mixing, and further improves the gas mixing uniformity. The first gas equalization component 30 of this application adopts the staggered arrangement of the first holes 311 and the second holes 321. This structure causes the airflow to be deflected and mixed when it passes through the first gas equalization disk 31 and the second gas equalization disk 32, so that the gas is more evenly distributed inside the furnace cavity 11, which is conducive to the generation of graphene with good uniformity of number of layers and surface thickness, and reduces the difference in graphene growth uniformity between several wafer substrates.

[0056] This application does not limit the shape of the first gas equalization disk 31 and the second gas equalization disk 32. The shapes of the first gas equalization disk 31 and the second gas equalization disk 32 can match the cross-sectional shape of the furnace cavity 11. For example, if the cross-section of the furnace cavity 11 is circular, the first gas equalization disk 31 and the second gas equalization disk 32 can be set to be circular. In this case, a plurality of first holes 311 are evenly distributed along the surface of the circular first gas equalization disk 31, and a plurality of second holes 321 are evenly distributed along the surface of the circular second gas equalization disk 32.

[0057] like Figure 2 and Figure 3 As shown, this application does not limit the number of the first air distribution disk 31 and the second air distribution disk 32, and they can be set as needed. In this embodiment, two first air distribution disks 31 and two second air distribution disks 32 are respectively provided and stacked at intervals, which can cause the airflow to generate three deflections and mixing, but it is not limited to this.

[0058] like Figures 2 to 5 As shown, in some embodiments, the first gas equalization component 30 further includes a first connecting portion 33, which is connected to both the first gas equalization disk 31 and the second gas equalization disk 32.

[0059] The first connecting part 33 can connect the first air equalization disk 31 and the second air equalization disk 32 to ensure the reliability of the connection between the first air equalization disk 31 and the second air equalization disk 32.

[0060] In some embodiments, a plurality of first connecting portions 33 are provided, wherein one first connecting portion 33 is disposed at the center of the first air distribution plate 31 and the second air distribution plate 32, and the remaining first connecting portions 33 are disposed at circumferential intervals along the central first connecting portion 33.

[0061] The arrangement of multiple first connecting parts 33 enables the connection of the center and periphery of the first air equalization disk 31 and the second air equalization disk 32, thereby improving the connection reliability between the first air equalization disk 31 and the second air equalization disk 32.

[0062] like Figure 4 and Figure 5 As shown, in this embodiment, there are six first connecting parts 33. One first connecting part 33 is located at the center of the first air equalization disk 31 and the second air equalization disk 32. Three first connecting parts 33 are evenly distributed around the center first connecting part 33. The remaining two first connecting parts 33 are located on the bottom sides of the first air equalization disk 31 and the second air equalization disk 32, thereby ensuring the stability of the connection between the first air equalization disk 31 and the second air equalization disk 32. However, this is not the only limitation. In other embodiments, the number of first connecting parts 33 can be adjusted as needed.

[0063] Specifically, the first connecting part 33 is a hollow tubular shape, which can achieve connection while reducing weight. The first connecting part 33 can be connected and fixed to the first gas equalizing plate 31 and the second gas equalizing plate 32 by welding (but not limited to this).

[0064] like Figure 1 As shown, in some embodiments, at least two first air equalization components 30 are provided, wherein at least one first air equalization component 30 is provided close to the carrier 20, and at least one first air equalization component 30 is provided close to the air inlet end.

[0065] At least two first gas equalization components 30 are provided, with at least one first gas equalization component 30 being located close to the carrier 20 and at least one first gas equalization component 30 being located close to the gas inlet end. On the one hand, this can improve the mixing uniformity of the gas flowing to the carrier 20 and prevent the first gas equalization component 30 from being too far away from the carrier 20, which would cause the uniformly mixed gas to become uneven. On the other hand, the first gas equalization component 30 located close to the carrier 20 can intercept the reaction gas at the carrier 20, reduce its backflow to the gas inlet end, and ensure the full reaction between the gas and the wafer substrate.

[0066] In this embodiment, two first air equalization components 30 are provided, one first air equalization component 30 is located near the carrier 20 and the other first air equalization component 30 is located near the air inlet. However, it is not limited to this. In other embodiments, the first air equalization components 30 can be set to three or four, etc., depending on the distance between the air inlet and the carrier 20.

[0067] like Figure 4 and Figure 5 As shown, in some embodiments, the bottom of the first air distribution plate 31 and the bottom of the second air distribution plate 32 are provided with corresponding and communicating first mating holes 312. The first mating holes 312 are used to dock with the conveying component to realize the automatic transmission of the first air distribution component 30 and the carrier 20.

[0068] The first mating hole 312 provided at the bottom of the first gas equalization plate 31 and the second gas equalization plate 32 can be easily mated with the conveying component, which facilitates the placement and removal of the first gas equalization component 30, and does not hinder the rapid conveying of the wafer substrate and carrier 20 by the conveying component. This design not only ensures the uniform distribution of gas, but also perfectly matches the requirements of automated production lines, so that the equipment can maintain excellent process performance while greatly improving production efficiency and ease of operation.

[0069] It should be noted that the conveying assembly includes a conveying rod, which can mate with the first mating hole 312. The first gas equalization assembly 30 can be placed in or removed from the furnace cavity 11 via the conveying rod. Since the conveying assembly is existing technology, it will not be described in detail here.

[0070] Specifically, to ensure the stability of the transmission, two first mating holes 312 are provided, located on the bottom sides of the first air distribution plate 31 and the second air distribution plate 32.

[0071] This application ensures the uniformity of gas intake and flow by setting the gas inlet flange 40 and the first gas equalization component 30, thereby making the gas flow more evenly to the carrier 20 and react evenly with the wafer substrate on the carrier 20, which is more conducive to the uniform growth of graphene.

[0072] It is understandable that there is a fitting gap between the heat shield component 60 and the cavity wall of the furnace cavity 11, through which gas can flow to the exhaust end to achieve exhaust.

[0073] like Figure 13 and Figure 14 As shown, in some embodiments, the heat shield assembly 60 includes a plurality of heat shield plates 61, and the plurality of heat shield plates 61 are spaced apart along the gas flow direction.

[0074] Multiple heat-insulating plates 61 spaced apart along the gas flow direction can enhance the heat insulation effect, thereby reducing the loss of reaction heat at the carrier 20 and increasing the reaction temperature.

[0075] Specifically, the heat shield 61 can be made of a high-reflectivity metal material, which can effectively block the heat radiation loss of the carrier 20 near the exhaust end, increase the reaction temperature, and thus increase the degree of decomposition of the carbon source gas near the exhaust end, and increase the content of active carbon species. Through this setting, the reduction in the amount of active carbon species caused by the consumption of carbon source gas at the front end is compensated, thereby ensuring the uniformity of the graphene growth thickness along the gas flow direction.

[0076] This application does not limit the shape of the heat baffle 61; the shape of the heat baffle 61 can match the cross-sectional shape of the furnace cavity 11. For example, if the cross-section of the furnace cavity 11 is circular, the heat baffle 61 can be set to be circular.

[0077] This application does not limit the number of heat baffles 61, and the number can be set as needed. In this embodiment, four heat baffles 61 are arranged at intervals, but it is not limited to this.

[0078] In some embodiments, the heat shield assembly 60 further includes a third connection portion 62, which is connected to a plurality of heat shield plates 61.

[0079] The third connecting part 62 can connect multiple spaced heat baffles 61 to ensure the reliability of the connection between the heat baffles 61.

[0080] To ensure connection stability, in this embodiment, there are multiple third connection parts 62, one of which is located at the center of the heat shield 61, and the remaining third connection parts 62 are spaced apart around the center third connection part 62.

[0081] In this embodiment, there are four third connecting parts 62. One third connecting part 62 is located at the center of the heat baffle 61, and three third connecting parts 62 are evenly distributed around the center third connecting part 62, thereby ensuring the stability of the connection between the heat baffles 61. However, this is not the only option. In other embodiments, the number of third connecting parts 62 can be adjusted as needed.

[0082] Specifically, the third connecting part 62 can be a connecting pipe, which can both achieve connection and reduce weight. The third connecting part 62 can be connected and fixed to the heat baffle 61 by welding (but not limited to this).

[0083] Optionally, a corresponding third mating hole 63 is provided at the bottom of the heat shield 61. The third mating hole 63 can be mated with an external tool (such as a hook) to facilitate the removal of the heat shield assembly 60 from the furnace cavity 11 or to facilitate the placement of the heat shield assembly 60 in the furnace cavity 11.

[0084] like Figure 1 As shown, in some embodiments, the graphene wafer mass production apparatus further includes a second gas equalization component 50, which is disposed between the carrier 20 and the extraction end.

[0085] The second gas equalization component 50 allows the gas after the reaction to flow evenly to the exhaust end for discharge, making the gas flow out of the furnace cavity 11 more smoothly and evenly, reducing gas disturbance downstream of the carrier 20, and further ensuring the uniformity of graphene growth on the wafer substrate.

[0086] like Figures 9 to 12As shown, in some embodiments, the second gas equalization component 50 includes a third gas equalization disk 51 and a fourth gas equalization disk 52, wherein the third gas equalization disk 51 and the fourth gas equalization disk 52 are stacked and spaced apart along the gas flow direction, the third gas equalization disk 51 is provided with a plurality of uniformly distributed third holes 511, and the fourth gas equalization disk 52 is provided with a plurality of uniformly distributed fourth holes 521, and the third holes 511 and the fourth holes 521 are staggered along the gas flow direction.

[0087] When the gas flows through the second gas equalization component 50, the gas first flows through the multiple third holes 511 of the third gas equalization disk 51 to achieve gas equalization. Since the third holes 511 and the fourth holes 521 are staggered along the gas flow direction, the gas direction changes when it flows to the fourth hole 521 of the fourth gas equalization disk 52, which is conducive to gas disturbance and mixing and improves gas mixing uniformity.

[0088] Understandably, the setting of the second gas equalization component 50 requires that some of the gas flowing back from the extraction end to the carrier 20 first flow through the second gas equalization component 50 before flowing to the carrier 20, which can reduce gas backflow and ensure that the backflowing gas flows evenly to the carrier 20, further improving the uniformity of graphene growth.

[0089] This application does not limit the shape of the third gas equalization disk 51 and the fourth gas equalization disk 52. The shapes of the third gas equalization disk 51 and the fourth gas equalization disk 52 can match the cross-sectional shape of the furnace cavity 11. For example, if the cross-section of the furnace cavity 11 is circular, the third gas equalization disk 51 and the fourth gas equalization disk 52 can be set as circular. In this case, multiple third holes 511 are evenly distributed along the surface of the circular third gas equalization disk 51, and multiple fourth holes 521 are evenly distributed along the surface of the circular fourth gas equalization disk 52.

[0090] This application does not limit the number of the third gas equalization disk 51 and the fourth gas equalization disk 52, and they can be set as needed. In this embodiment, two third gas equalization disks 51 and two fourth gas equalization disks 52 are provided and are arranged alternately, but it is not limited to this.

[0091] In some embodiments, the second gas equalization component 50 further includes a second connecting portion 53, which is connected to both the third gas equalization disk 51 and the fourth gas equalization disk 52.

[0092] The second connecting part 53 can connect the third gas equalizing disk 51 and the fourth gas equalizing disk 52 to ensure the reliability of the connection between the third gas equalizing disk 51 and the fourth gas equalizing disk 52.

[0093] To ensure connection stability, in this embodiment, there are multiple second connection parts 53, one of which is located at the center of the third gas equalization disk 51 and the fourth gas equalization disk 52, and the remaining second connection parts 53 are arranged at intervals around the center second connection part 53.

[0094] The arrangement of multiple second connecting parts 53 enables the connection of the center and periphery of the third air equalization disk 51 and the fourth air equalization disk 52, thereby improving the connection reliability between the third air equalization disk 51 and the fourth air equalization disk 52.

[0095] In this embodiment, four second connecting parts 53 are provided. One second connecting part 53 is located at the center of the third air equalization disk 51 and the fourth air equalization disk 52. The three second connecting parts 53 are evenly distributed around the center second connecting part 53, thereby ensuring the stability of the connection between the third air equalization disk 51 and the fourth air equalization disk 52. However, this is not the only embodiment. In other embodiments, the number of second connecting parts 53 can be adjusted as needed.

[0096] Specifically, the second connecting part 53 is a connecting pipe, which can both achieve connection and reduce weight. The second connecting part 53 can be connected and fixed to the third gas equalizing plate 51 and the fourth gas equalizing plate 52 by welding (but not limited to this).

[0097] Optionally, a corresponding second mating hole 512 is provided at the bottom of the third gas equalization plate 51 and the bottom of the fourth gas equalization plate 52. The second mating hole 512 can be mated with an external tool (such as a hook) to facilitate the removal of the second gas equalization component 50 from the furnace cavity 11 or to facilitate the placement of the second gas equalization component 50 in the furnace cavity 11.

[0098] The first gas equalization component 30, the second gas equalization component 50, and the heat shield component 60 adopt a modular assembly method, and each functional layer can be disassembled and maintained independently, while maintaining compatibility with the automated production system, thereby improving process quality and optimizing equipment maintenance efficiency.

[0099] In this embodiment, the heat-shielding component 60 is disposed between the second gas-uniforming component 50 and the extraction end. Gas flows through the second gas-uniforming component 50, through the gap between the heat-shielding plate 61 and the furnace cavity wall 11, and flows to the extraction end. By setting the second gas-uniforming component 50 and integrating the heat-shielding component 60 at the tail end of the furnace cavity 11, this application can effectively block heat loss from the carrier 20 near the extraction end, maintaining the temperature slightly higher than the inlet end. This design not only ensures the uniformity of gas emission but also achieves precise control of process temperature through passive thermal management.

[0100] In some embodiments, the wafer substrate is placed vertically on the carrier 20.

[0101] Compared to placing the wafer substrate horizontally, placing the wafer substrate vertically on the carrier 20 allows for better contact with the incoming gas, increasing the reaction contact area between the wafer substrate and the gas, and enabling a more complete reaction between the gas and the wafer substrate.

[0102] Specifically, the wafer substrate can be fixed to the carrier 20 by snap-fit, which is convenient for disassembly and assembly, but it is not limited to this. The wafer substrate can also be fixed to the carrier 20 by other methods.

[0103] In addition to the above-mentioned settings, the graphene wafer mass production apparatus of this embodiment also includes a vacuum flange 70, which is disposed at the vacuum end and is used to draw a vacuum into the furnace chamber 11 so that the gas after the reaction in the furnace chamber 11 can flow out of the furnace chamber 11.

[0104] In summary, this utility model achieves three-dimensional dynamic flow field optimization of the furnace cavity 11 through the coordinated design of gas inlet flange dispersion, first gas homogenization component 30 dynamic gas homogenization, wafer substrate vertically set on carrier 20 to increase reaction area, second gas homogenization component 50 to make gas flow out uniformly and improve the uniformity of return gas, and heat shield component 60 heat insulation to improve reaction temperature. This reduces the difference in graphene growth uniformity between and within wafer substrates, while improving the utilization rate of reaction gas.

[0105] The above description is merely a preferred embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application.

Claims

1. A graphene wafer mass production apparatus for depositing and growing graphene on the surface of a wafer, characterized in that, The graphene wafer mass production apparatus includes: The furnace body (10) has an air inlet end, an air extraction end, and a furnace cavity (11) that is connected to both the air inlet end and the air extraction end; A carrier (20) is disposed in the furnace cavity (11), and the carrier (20) is used to place a plurality of wafer substrates; An air inlet flange (40) is provided at the air inlet end of the furnace body (10), and the air inlet flange (40) is used to uniformly introduce air into the furnace cavity (11); A first gas equalization component (30) is disposed in the furnace cavity (11). The first gas equalization component (30) is located between the gas inlet flange (40) and the carrier (20). The first gas equalization component (30) is used to equalize the flow of gas. A heat shield assembly (60) is disposed in the furnace cavity (11). The heat shield assembly (60) is located between the carrier (20) and the exhaust end of the furnace body (10). The heat shield assembly (60) is used to increase the temperature of the carrier (20) near the exhaust end.

2. The graphene wafer mass production apparatus according to claim 1, characterized in that, The intake flange (40) includes: A flange body (41) is provided at the air inlet end of the furnace body (10). The flange body (41) is provided with at least two air injection ports (411) for injecting at least two different gases into the furnace cavity (11). An air intake passage (412) is provided inside the flange body (41), and the air intake passage (412) is connected to the air injection port (411); An air inlet (413) extends radially along the flange body (41). The air inlet (413) is provided in multiple ways and the multiple air inlets (413) are evenly arranged circumferentially along the flange body (41). The air inlet (413) connects the air intake channel (412) and the central cavity (414) of the flange body (41).

3. The graphene wafer mass production apparatus according to claim 2, characterized in that, The air intake passage (412) includes: The first air passage (4121) is opened along the circumference of the flange body (41), and the first air passage (4121) is connected to the air injection port (411); The second air passage (4122) is fan-shaped and opened along the circumference of the flange body (41). Multiple second air passages (4122) are provided and are spaced apart along the circumference of the flange body (41). The multiple second air passages (4122) are connected to the first air passage (4121), and each second air passage (4122) is connected to at least one air inlet (413).

4. The graphene wafer mass production apparatus according to claim 2, characterized in that, The air intake flange (40) also includes a cooling water passage, which is disposed on the flange body (41). The flange body (41) is provided with two water passage connectors (42) connected to the cooling water passage.

5. The apparatus for mass production of graphene wafers according to any one of claims 1 to 4, characterized in that, The first gas equalization component (30) includes a first gas equalization disk (31) and a second gas equalization disk (32). The first gas equalization disk (31) and the second gas equalization disk (32) are stacked and spaced apart in sequence along the gas flow direction. The first gas equalization disk (31) is provided with a plurality of uniformly distributed first holes (311), and the second gas equalization disk (32) is provided with a plurality of uniformly distributed second holes (321). The first holes (311) and the second holes (321) are staggered along the gas flow direction.

6. The graphene wafer mass production apparatus according to claim 5, characterized in that, The bottom of the first air distribution plate (31) and the bottom of the second air distribution plate (32) are provided with corresponding and communicating first mating holes (312). The first mating holes (312) are used to dock with the conveying component to realize the automatic transmission of the first air distribution component (30) and the carrier (20).

7. The apparatus for mass production of graphene wafers according to any one of claims 1 to 4, characterized in that, The heat shield assembly (60) includes a plurality of heat shields (61), and the plurality of heat shields (61) are spaced apart along the gas flow direction.

8. The apparatus for mass production of graphene wafers according to any one of claims 1 to 4, characterized in that, The graphene wafer mass production apparatus further includes a second gas equalization component (50), which is disposed between the carrier (20) and the heat shield component (60).

9. The graphene wafer mass production apparatus according to claim 8, characterized in that, The second gas equalization component (50) includes a third gas equalization disk (51) and a fourth gas equalization disk (52). The third gas equalization disk (51) and the fourth gas equalization disk (52) are stacked and spaced apart in sequence along the gas flow direction. The third gas equalization disk (51) is provided with a plurality of uniformly distributed third holes (511), and the fourth gas equalization disk (52) is provided with a plurality of uniformly distributed fourth holes (521). The third holes (511) and the fourth holes (521) are staggered along the gas flow direction.

10. The apparatus for mass production of graphene wafers according to any one of claims 1 to 4, characterized in that, The wafer substrate is placed vertically on the carrier (20).

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