Display device

Abstract

A display device is provided. The display device includes: a display unit including a plurality of light emitting diodes; a color conversion unit including a dam and a color conversion layer; and an adhesive unit gap holding layer between the display unit and the color conversion unit, in which the adhesive unit gap holding layer includes an adhesive unit gap holding portion, and the adhesive unit gap holding portion includes a bead spacer and an adhesive organic material member.

Description

Display device Technical Field

[0001] Some aspects of embodiments of this disclosure relate to display devices and methods of manufacturing display devices. Background Technology

[0002] As display devices, light-emitting display devices, which display images by adjusting the brightness of light-emitting elements, and liquid crystal display devices, which display images by adjusting the transmittance of a liquid crystal layer, can be used. Unlike liquid crystal display devices, light-emitting display devices typically include a separate light source (such as a backlight), thus allowing for a relatively smaller thickness and weight. Additionally, light-emitting display devices generally exhibit relatively high quality characteristics such as relatively low power consumption, high brightness, and high response speed.

[0003] Display devices that include a color conversion unit can reduce light loss and achieve a relatively high color reproduction rate. The color conversion unit may include a color conversion layer in which quantum dots are dispersed, and the process of protecting the color conversion layer is expected to be simplified.

[0004] The information disclosed in this Background section is only intended to enhance the understanding of the background, and therefore the information discussed in this Background section need not constitute prior art. Summary of the Invention

[0005] Some aspects of embodiments of this disclosure include display devices that can have relatively simplified manufacturing processes, relatively reduced costs, and relatively improved light efficiency.

[0006] Some aspects of embodiments of this disclosure include methods for manufacturing display devices that can have relatively reduced costs and relatively simplified manufacturing processes.

[0007] A display device according to some embodiments includes: a display unit including a plurality of light-emitting diodes; a color conversion unit including a dam and a color conversion layer; and an adhesive unit gap retaining layer between the display unit and the color conversion unit, wherein the adhesive unit gap retaining layer includes an adhesive unit gap retaining portion, and the adhesive unit gap retaining portion includes bead spacers and adhesive organic material components.

[0008] According to some embodiments, the color conversion unit further includes a transmissive layer, and the adhesive unit gap retaining portion may be on at least one of the color conversion layer and the transmissive layer.

[0009] According to some embodiments, a portion of the adhesive unit gap retaining portion may include an adhesive unit gap retaining layer that overlaps with the dam.

[0010] According to some embodiments, the color conversion unit may also include a trap, and the adhesive unit gap retaining portion may be located within the trap.

[0011] According to some embodiments, an air gap may be formed in the portion of the adhesive unit gap retaining layer that is not filled with the adhesive unit gap retaining portion.

[0012] According to some embodiments, the height of the dam may be higher than the height of the color conversion layer.

[0013] According to some embodiments, the adhesive unit gap retaining portion can contact the color conversion layer and the dam.

[0014] According to some embodiments, the color conversion unit may also include a transmission layer, which may include quantum dots and scatterers, and the transmission layer may include scatterers.

[0015] A display device according to some embodiments includes: a substrate; a plurality of light-emitting diodes (LEDs) on the substrate; an encapsulation layer on the plurality of LEDs; a color conversion unit including a dam and a color conversion layer on the encapsulation layer; an adhesive unit gap retaining portion including bead spacers and adhesive organic material members on the color conversion unit; an adhesive unit gap retaining layer including the adhesive unit gap retaining portion; and a color filter on the adhesive unit gap retaining layer.

[0016] According to some embodiments, the color conversion unit further includes a transmissive layer, and the adhesive unit gap retaining portion may be on at least one of the color conversion layer and the transmissive layer.

[0017] According to some embodiments, a portion of the adhesive unit gap retaining portion may include an adhesive unit gap retaining layer that overlaps with the dam.

[0018] According to some embodiments, an air gap may be formed in the portion of the adhesive unit gap retaining layer that is not filled with the adhesive unit gap retaining portion.

[0019] According to some embodiments, the height of the dam may be higher than the height of the color conversion layer.

[0020] According to some embodiments, the adhesive unit gap retaining portion can contact the color conversion layer and the dam.

[0021] According to some embodiments, the color conversion unit may also include a transmission layer, which may include quantum dots and scatterers, and the transmission layer may include scatterers.

[0022] In a method for manufacturing a display device according to some embodiments, the method includes the following steps: forming a dam including a color conversion layer and a transmissive layer; applying an adhesive unit gap retaining portion including bead spacers and adhesive organic material members to at least one of the color conversion layer and the transmissive layer; bonding a display unit to the adhesive unit gap retaining portion; and curing the adhesive unit gap retaining portion to form an adhesive unit gap retaining layer.

[0023] According to some embodiments, in the cured adhesive unit gap retention portion, the adhesive unit gap retention layer may be formed on any one of the color conversion layer, the transmissive layer, and the dam.

[0024] According to some embodiments, in the cured adhesive unit gap retaining portion, a portion of the adhesive unit gap retaining portion may overlap with the dam to form an adhesive unit gap retaining layer.

[0025] According to some embodiments, the dam also includes a trap, and in the step of curing the adhesive unit gap retaining portion, a portion of the adhesive unit gap retaining portion may be retained in the trap and form an adhesive unit gap retaining layer.

[0026] According to some embodiments, an air gap can be formed in the space not filled by the adhesive unit gap retaining portion in the cured adhesive unit gap retaining portion.

[0027] According to some embodiments, by providing a display device comprising bead spacers and bonded organic material components, the manufacturing process can be relatively simplified and costs can be relatively reduced. Additionally, according to some embodiments, by forming air gaps, the luminous efficiency of the display device can be relatively improved. Attached Figure Description

[0028] Figure 1 is a schematic plan view of a display device according to some embodiments.

[0029] Figure 2 is a schematic plan view of a display area in a display panel according to some embodiments.

[0030] Figure 3 is a cross-sectional view taken along line A-A' in Figure 2 according to some embodiments.

[0031] Figure 4 is a cross-sectional view taken along line A-A' in Figure 2 according to some embodiments.

[0032] Figure 5 is a cross-sectional view taken along line A-A' in Figure 2 according to some embodiments.

[0033] Figures 6 to 10 are schematic cross-sectional views illustrating the manufacturing process of a display panel according to some embodiments.

[0034] Figure 11 is a cross-sectional view taken along line A-A' in Figure 2 according to some embodiments.

[0035] Figure 12 is a cross-sectional view taken along line A-A' in Figure 2 according to some embodiments.

[0036] Figure 13 is a cross-sectional view taken along line A-A' in Figure 2 according to some embodiments.

[0037] Figures 14 to 18 are schematic cross-sectional views illustrating the manufacturing process of a display panel according to some embodiments.

[0038] Figure 19 is a schematic plan view of a display area in a display panel according to some embodiments.

[0039] Figure 20 is a cross-sectional view taken along line B-B' in Figure 19 according to some embodiments.

[0040] Figure 21 is a cross-sectional view taken along line B-B' in Figure 19 according to some embodiments.

[0041] Figure 22 is a cross-sectional view taken along line B-B' in Figure 19 according to some embodiments.

[0042] Figure 23 is a cross-sectional view taken along line B-B' in Figure 19 according to some embodiments.

[0043] Figure 24 is a circuit diagram of a pixel of a display device according to some embodiments. Detailed Implementation

[0044] In the following description, various embodiments of the present disclosure will be described in more detail with reference to the accompanying drawings, enabling those skilled in the art to readily implement the present disclosure. The present disclosure may be implemented in many different forms and is not limited to the embodiments described herein.

[0045] To more clearly explain aspects of some embodiments of this disclosure, descriptions of some components that are unnecessary for those skilled in the art to make, use, and understand embodiments of this disclosure, and throughout the specification, the same or similar components are assigned the same reference numerals.

[0046] Furthermore, for ease of explanation, the size and thickness of each component shown in the accompanying drawings are arbitrarily depicted, and therefore this disclosure is not necessarily limited to the sizes and thicknesses shown. In the drawings, thicknesses are enlarged to clearly represent the individual layers and regions. Also, in the drawings, the thicknesses of some layers and regions are exaggerated for ease of explanation.

[0047] Additionally, when a portion of a layer, diaphragm, region, or plate is said to be "above" or "on" another portion, this includes not only the case where that portion is "directly above" the other portion, but also the case where there is another portion in between. Conversely, when an element is said to be "directly above" another element, there is no intervening element. Furthermore, "above" or "on" a reference portion means located above or below the reference portion, and does not necessarily mean located "above" or "on" the reference portion in a direction opposite to gravity.

[0048] Furthermore, throughout the instruction manual, when a section is described as "including" a specific component, unless otherwise expressly stated to the contrary, this means that the section may also include other components, rather than excluding other components.

[0049] Additionally, throughout the instruction manual, when "in a plane" is mentioned, it means when the target part is viewed from above, and when "in a section" is mentioned, it means when the target part is cut vertically and viewed from the side.

[0050] Furthermore, throughout the specification, when the term "connected" is used, it means not only when two or more components are directly connected, but also when two or more components are indirectly connected, physically connected, or electrically connected through other components, and when two or more components are referred to by different names according to their location or function, although the two or more components may include actual integrated parts connected to each other.

[0051] Furthermore, throughout the specification, when a part such as wiring, layer, film, area, plate or component is described as "extending in a first direction or a second direction", this means not only a straight shape extending in that direction, but also a structure that bends, zigs or otherwise extends along the first or second direction.

[0052] Furthermore, electronic devices (e.g., mobile phones, televisions, monitors, laptop computers, etc.) including display devices, display panels, etc., described in the specification, or display devices, display panels, etc., manufactured by the manufacturing methods described in the specification included herein, are not excluded from the scope of this specification.

[0053] In the accompanying drawings, the symbols “x”, “y”, and “z” are used to indicate directions, where “x” is a first direction, “y” is a second direction perpendicular to the first direction, and “z” is a third direction perpendicular to both the first and second directions. The first direction x, the second direction y, and the third direction z can correspond to the horizontal direction, vertical direction, and thickness direction of the display device, respectively.

[0054] Figure 1 is a schematic plan view of a display device according to some embodiments.

[0055] Referring to Figure 1, the display device 1 may include a display panel 10, a flexible printed circuit board 20, a driver integrated circuit chip 30, a printed circuit board 40, a power module 50, etc.

[0056] The display panel 10 may include a display area DA corresponding to the screen displaying the image and a non-display area NA in which various circuits and / or wiring for generating and / or transmitting signals applied to the display area DA are arranged. The non-display area NA may be adjacent to the display area DA (e.g., outside the periphery or coverage area of ​​the display area DA) and may surround the display area DA. In FIG1, the inner and outer regions of the rectangle may be the display area DA and the non-display area NA, respectively.

[0057] Pixels PX can be arranged in a matrix within the display area DA of the display panel 10. Additionally, the display area DA includes the data transmission voltage V. DATA (See Figure 24) Data line DL, transmission drive voltage EL VDD (See Figure 24) Drive voltage line VL1, transmission common voltage EL VSS (See Figure 24) Common voltage line VL2 and transmission initialization voltage V INT (See Figure 24) Initialization voltage line VL3. Drive voltage line VL1, common voltage line VL2, and initialization voltage line VL3 may extend in the second direction y. Initialization voltage line VL3 may include branch voltage lines VL3' extending in the first direction x. Each pixel PX can receive data voltage V from these wirings. DATA , driving voltage EL VDD Common voltage EL VSS and initial voltage V INT Drive voltage EL VDD and common voltage EL VSS The power voltage applied to each pixel PX, and the driving voltage line VL1 and common voltage line VL2 that transmit these power voltages, can be referred to as the power voltage line. Driving voltage EL VDD It can be compared to the common voltage EL VSS High voltage. Drive voltage EL VDD This can be referred to as the first power supply voltage or the high-potential power supply voltage. Common voltage EL VSS It can be referred to as the second power supply voltage or the low-potential power supply voltage.

[0058] In the non-display area NA of the display panel 10, gate drivers may be located on both sides of the display area DA. The gate drivers may be integrated into the non-display area NA. Pixel PX can receive data voltage V at a set or predetermined timing by receiving the gate signal (also called the scan signal) generated by the gate driver. DATA .

[0059] The drive voltage transmission line DVL connected to the drive voltage line VL1 and the common voltage transmission line CVL connected to the common voltage line VL2 may be located in the non-display area NA of the display panel 10. The drive voltage transmission line DVL and the common voltage transmission line CVL may each include a portion extending generally in the second direction y and a portion extending generally in the first direction x, respectively. The common voltage transmission line CVL may be positioned around the display area DA (e.g., outside the periphery or coverage area of ​​the display area DA). The common voltage line VL2 may be connected to the common voltage transmission line CVL at the lower and upper sides of the display area DA, thereby uniformly supplying the common voltage EL throughout the entire display area DA. VSS .

[0060] One end of the flexible printed circuit board 20 can be connected or bonded to the display panel 10, and the other end can be connected or bonded to the printed circuit board 40. This includes transmitting data voltage V. DATA The data driver integrated circuit chip 30 applied to the data line DL can be located on the flexible printed circuit board 20.

[0061] Generates such as drive voltage EL VDD and common voltage EL VSS The power module 50, which controls the power voltage, may be located on the printed circuit board 40. The power module 50 may be provided in the form of an integrated circuit chip. The signal control unit that controls the data driver and the gate driver may be located on the printed circuit board 40.

[0062] Figure 2 is a schematic plan view of a display area in a display panel according to some embodiments, and Figure 3 is a cross-sectional view taken along line A-A' in Figure 2 according to some embodiments.

[0063] Referring to Figure 2, an area in the display region DA in which approximately six pixels are arranged is shown. Pixels may include a first pixel PXa, a second pixel PXb, and a third pixel PXc representing different colors. For example, the first pixel PXa may emit red light, the second pixel PXb may emit green light, and the third pixel PXc may emit blue light. In the display region DA, the first pixel PXa, the second pixel PXb, and the third pixel PXc may be arranged repeatedly in the first direction x and the second direction y.

[0064] Referring to Figure 3, the display panel 10 may include a display unit 100 and a color conversion unit 200. The color conversion unit 200 may be located on the display unit 100, and the entire color conversion unit 200 may overlap with the display unit 100.

[0065] The display unit 100 may include light-emitting diodes (LEDs) corresponding to each of the first pixel PXa, the second pixel PXb, and the third pixel PXc. The color conversion unit 200 may convert the wavelength of the light emitted from the LEDs and emit it to the outside of the display panel 10.

[0066] The display unit 100 may substantially include a lower substrate 110, a transistor TR formed on the lower substrate 110, and a light-emitting diode (LED) connected to the transistor TR.

[0067] The lower substrate 110 may comprise a material with rigid properties (such as glass) or a material with flexible properties (such as plastic). For example, the lower substrate 110 may be a glass substrate.

[0068] A light-blocking layer BL can be positioned on the lower substrate 110. The light-blocking layer BL prevents or reduces the amount of external light reaching the semiconductor layer AL of the transistor TR, and prevents or reduces the degradation of the characteristics of the semiconductor layer AL. The light-blocking layer BL controls the leakage current of the transistor TR (especially the driving transistor, whose current characteristics are important in light-emitting display devices). The light-blocking layer BL may include a material that does not transmit light in the wavelength range to be blocked. For example, the light-blocking layer BL may include metals such as copper (Cu), aluminum (Al), molybdenum (MO), titanium (Ti), and tungsten (W), and may be a single layer or multiple layers. For example, the light-blocking layer BL may have a double-layer structure such as titanium (Ti) / copper (Cu). The light-blocking layer BL can be used as an electrode to apply a specific voltage to the display panel 10. In this case, the rate of change of current in the saturation region of the voltage-current characteristic curve of the transistor TR becomes smaller, thereby improving its characteristics as a driving transistor.

[0069] A buffer layer 120 may be located on the lower substrate 110 and the light-blocking layer BL. The buffer layer 120 can block impurities from the lower substrate 110 during the formation of the semiconductor layer AL, thereby improving the characteristics of the semiconductor layer AL, and can alleviate the stress on the semiconductor layer AL by planarizing the surface of the lower substrate 110. The buffer layer 120 may include an inorganic insulating material, such as silicon nitride (SiN). x Silica SiO x Or silicon oxynitride (SiO) x N y The buffer layer 120 may include amorphous silicon.

[0070] A semiconductor layer AL may be located on the buffer layer 120. The semiconductor layer AL may include a first region, a second region, and a channel region between the first and second regions. The semiconductor layer AL may include an oxide semiconductor. For example, the semiconductor layer AL may include an oxide semiconductor, such as IGZO (indium gallium zinc oxide) comprising at least one of zinc (Zn), indium (In), gallium (Ga), tin (Sn), and mixtures thereof. The semiconductor layer AL may include polycrystalline silicon or amorphous silicon, such as low-temperature polycrystalline silicon (LTPS).

[0071] The gate insulating layer 140 may be located on the semiconductor layer AL. The gate insulating layer 140 may be formed in the region overlapping with the gate electrode GE. This structure can be formed by etching the gate insulating layer 140 during a photolithography process to form the gate electrode GE. Alternatively, this structure may be formed to substantially cover the entire lower substrate 110. The gate insulating layer 140 may comprise an inorganic insulating material, such as silicon oxide, silicon nitride, or silicon oxynitride, and may be a single layer or multiple layers.

[0072] The gate electrode GE may be positioned on the gate insulating layer 140. The gate electrode GE may overlap with the channel region of the semiconductor layer AL. The gate electrode GE may comprise a metal, such as molybdenum (Mo), aluminum (Al), copper (Cu), or titanium (Ti), and may be a single layer or multiple layers. For example, the gate insulating layer 140 may have a bilayer structure, such as titanium (Ti) / copper (Cu). The first gate line GL1 and / or the second gate line GL2 described above may be on the same layer as the gate electrode GE. As used herein, being formed in the same layer or to the same layer may mean that the corresponding components are formed from the same material in the same process (e.g., the same photolithography process).

[0073] Interlayer insulating layer 160 may be positioned on gate electrode GE. Interlayer insulating layer 160 may include inorganic insulating material, such as silicon oxide, silicon nitride, or silicon oxynitride, and may be a single layer or multiple layers.

[0074] The first electrode SE and the second electrode DE of the transistor TR can be positioned on the interlayer insulating layer 160. One of the first electrode SE and the second electrode DE can be the source electrode of the transistor TR, and the other can be the drain electrode of the transistor TR. The first electrode SE and the second electrode DE can be connected to the first region of the semiconductor layer AL and the second region of the semiconductor layer AL, respectively, through contact holes formed in the interlayer insulating layer 160. The first electrode SE or the second electrode DE (not shown) can be connected to the light-blocking layer BL through contact holes formed in the interlayer insulating layer 160, the gate insulating layer 140, and the buffer layer 120. The first electrode SE and the second electrode DE can include metals such as aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), or copper (Cu), and can be a single layer or multiple layers. For example, the first electrode SE and the second electrode DE may have a bilayer structure (such as titanium (Ti) / copper (Cu)) or a trilayer structure (such as titanium (Ti) / aluminum (Al) / titanium (Ti)).

[0075] The aforementioned data line DL, drive voltage line VL1, common voltage line VL2, initialization voltage line VL3, drive voltage transmission line DVL and / or common voltage transmission line CVL may be in the same layer as the first electrode SE and the second electrode DE.

[0076] The semiconductor layer AL, gate electrode GE, first electrode SE, and second electrode DE can form a transistor TR. The transistor TR shown in the figure corresponds to the first transistor T1 in pixel PX of Figure 24.

[0077] The planarization layer 180 may be positioned on the first electrode SE and the second electrode DE. The planarization layer 180 may include organic insulating materials such as general polymers (e.g., poly(methyl methacrylate) and polystyrene), phenolic polymer derivatives, acrylic polymers, imide polymers (e.g., polyimide), and siloxane polymers.

[0078] The pixel electrode PE of a light-emitting diode (LED) may be located on a planarization layer 180. The pixel electrode PE may be connected to a first electrode SE through contact holes formed in the planarization layer 180. The pixel electrode PE may be formed of a reflective conductive material or a semi-transparent conductive material, or it may be formed of a transparent conductive material. The pixel electrode PE may include a transparent conductive material, such as indium tin oxide (ITO) or indium zinc oxide (IZO). The pixel electrode PE may include metals, such as lithium (Li), calcium (Ca), aluminum (Al), silver (Ag), magnesium (Mg), and gold (Au). The pixel electrode PE may have a multilayer structure, for example, a three-layer structure such as ITO / silver (Ag) / ITO.

[0079] A pixel defining layer 185 having an opening overlapping the pixel electrode PE can be positioned on the planarization layer 180. The pixel defining layer 185 may include an organic insulating material, such as an acrylic polymer, an imide polymer, or an amide polymer. The pixel defining layer 185 may include colored pigments, such as black and blue pigments. For example, the pixel defining layer 185 may include a polyimide binder and pigments mixed with red, green, and blue. The pixel defining layer 185 may include a calorie binder resin and a mixture of lactam black and blue pigments. The pixel defining layer 185 may include carbon black. The pixel defining layer 185 containing black pigment can improve contrast and prevent or reduce reflections through the underlying metal layer.

[0080] The light-emitting layer EL may be located on the pixel electrode PE and the pixel defining layer 185. The light-emitting layer EL may contact the pixel electrode PE through an opening in the pixel defining layer 185. Unlike the illustration, the light-emitting layer EL may be located within the opening in the pixel defining layer 185. The light-emitting layer EL may include a light-emitting material that emits blue light. The light-emitting layer EL may also include a light-emitting material that emits red or green light in addition to blue light. In addition to the light-emitting layer EL, at least one of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer may be positioned on the pixel electrode PE.

[0081] The common electrode CE may be located on the light-emitting layer EL. The common electrode CE may be arranged or formed across the first pixel PXa, the second pixel PXb, and the third pixel PXc. The common electrode CE may include metals such as calcium (Ca), barium (Ba), magnesium (Mg), aluminum (Al), silver (Ag), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), and lithium (Li). The common electrode CE may include transparent conductive oxides such as indium tin oxide (ITO) or indium zinc oxide (IZO).

[0082] The pixel electrode PE, the light-emitting layer EL, and the common electrode CE can constitute a light-emitting diode (LED), which can be an organic light-emitting diode (OLED). The pixel electrode PE is provided individually for each of the first pixel PXa, the second pixel PXb, or the third pixel PXc, and can receive a drive current. The common electrode CE operates together with the first pixel PXa, the second pixel PXb, and the third pixel PXc, and can receive a common voltage. The pixel electrode PE can be the anode as a hole injection electrode, and the common electrode CE can be the cathode as an electron injection electrode, or vice versa. The opening of the pixel defining layer 185 can correspond to the light-emitting area of ​​the LED.

[0083] The encapsulation layer 190 (hereinafter simply referred to as the encapsulation layer) may be positioned on the common electrode CE. The encapsulation layer 190 seals the light-emitting diode (LED) and prevents or reduces the penetration of contaminants such as moisture or oxygen from the outside. The encapsulation layer 190 covers the entire display area DA, and the edges of the encapsulation layer 190 may be located in the non-display area NA. The encapsulation layer 190 may be a thin-film encapsulation layer comprising a first inorganic layer 191, a second inorganic layer 193, and an organic layer 192. The first inorganic layer 191 and the second inorganic layer 193 primarily prevent or reduce the penetration of contaminants such as moisture, and the organic layer 192 primarily planarizes the surface of the encapsulation layer 190, particularly the surface of the second inorganic layer 193 in the display area DA. The first inorganic layer 191 and the second inorganic layer 193 may comprise inorganic insulating materials such as silicon oxide or silicon nitride. The organic layer 192 may comprise organic materials such as acrylic resin, methacrylic resin, polyisoprene, vinyl resin, epoxy resin, polyurethane resin, cellulose resin, and perylene resin.

[0084] The color conversion unit 200 may include a dam 210, a first color conversion layer 230a and a second color conversion layer 230b, a transmissive layer 230c, a first insulating layer 241 and a second insulating layer 242, a first color filter 250a, a second color filter 250b and a third color filter 250c, and an upper substrate 270. The color conversion unit 200 may be connected to the display unit 100 via an adhesive unit gap retention layer 400.

[0085] The dam 210 may be located on the lower surface of the second insulating layer 242 of the color conversion unit 200. For example, the upper surface of the dam 210 may contact the lower surface of the second insulating layer 242. According to some embodiments, the second insulating layer 242 may be omitted, and the upper surface of the dam 210 may contact the first color filter 250a, the second color filter 250b, and the third color filter 250c. The dam 210 may overlap with the pixel defining layer 185. The dam 210 may not overlap or barely overlap with the light-emitting diode (LED). The dam 210 may be located at the boundary of the first pixel PXa, the second pixel PXb, and the third pixel PXc. The dam 210 may divide a pixel region.

[0086] Referring to FIG2, dam 210 may include a first opening 211a, a second opening 211b, and a third opening 211c overlapping with a light-emitting diode (LED). Dam 210 may include a first well 212a, a second well 212b, and a third well 212c overlapping with a pixel defining layer 185. In other words, the first opening 211a, the second opening 211b, and the third opening 211c, as well as the first well 212a, the second well 212b, and the third well 212c, may be included in dam 210.

[0087] The first opening 211a, the second opening 211b, and the third opening 211c can penetrate the dam 210 in the third direction z. The first opening 211a can overlap with the light-emitting diode (LED) corresponding to the first pixel PXa, the second opening 211b can overlap with the light-emitting diode (LED) corresponding to the second pixel PXb, and the third opening 211c can overlap with the light-emitting diode (LED) corresponding to the third pixel PXc.

[0088] The first well 212a, the second well 212b, and the third well 212c can penetrate the dam 210 in the third direction z. The first well 212a can be located between the first pixel PXa and the third pixel PXc, the second well 212b can be located between the second pixel PXb and the first pixel PXa and the third pixel PXc, and the third well 212c can be located between adjacent second pixels PXb. The first well 212a can extend in the second direction y, and the second well 212b can extend in the first direction x. The third well 212c can be formed over an area larger than each of the first well 212a and the second well 212b. The third well 212c can be formed over an area larger than each of the first opening 211a, the second opening 211b, and the third opening 211c. The first well 212a, the second well 212b, and the third well 212c can be separated from each other or can be connected. For example, the first well 212a and the second well 212b can be connected to form a T-shaped planar shape. The arrangement, size, and shape of the first well 212a, the second well 212b, and the third well 212c can vary according to the arrangement, size, and shape of the first pixel PXa, the second pixel PXb, and the third pixel PXc.

[0089] Dam 210 may be liquid-repellent. Dam 210 may be formed from a photosensitive resin composition containing a liquid-repellent material, or its surface may be subjected to a liquid-repellent treatment (e.g., plasma treatment) after its formation. Dam 210 may comprise organic materials such as acrylic polymers, epoxy polymers, imide polymers, olefin polymers, and amide polymers. Due to the liquid-repellent nature of dam 210, during the inkjet process of forming the first color conversion layer 230a, the second color conversion layer 230b, and the transmission layer 230c, the diffusion of droplets misdeposited on or at the edge of dam 210 can be controlled to prevent or reduce their residence on or at the edge of dam 210, and the size of the misdeposited droplets can be reduced. If misdeposited droplets are present on dam 210, the misdeposited droplets can reduce the quality of the layers formed in subsequent processes (e.g., adhesion, flatness, etc.), and therefore it may be necessary to remove the misdeposited droplets or reduce their size. As a way to reduce the amount of droplets that are mistakenly deposited, the height of the dam 210 can be set higher than the first color conversion layer 230a, the second color conversion layer 230b, and the transmission layer 230c.

[0090] The first color conversion layer 230a, the second color conversion layer 230b, and the transmission layer 230c can be located in the first opening 211a, the second opening 211b, and the third opening 211c, respectively. The dummy element 430 can be located within the first well 212a, the second well 212b, and the third well 212c. The upper surfaces of the first color conversion layer 230a, the second color conversion layer 230b, and the transmission layer 230c can contact the lower surface of the second insulating layer 242. The first color conversion layer 230a, the second color conversion layer 230b, and the transmission layer 230c can be formed by an inkjet printing process. When the first color conversion layer 230a, the second color conversion layer 230b, and the transmission layer 230c are formed, the first well 212a, the second well 212b, and the third well 212c can accommodate misdeposited droplets.

[0091] The first color conversion layer 230a may overlap with a light-emitting diode (LED) corresponding to the first pixel PXa, and may convert light incident from the LED into light of a first wavelength. The first wavelength of light may be red light having a maximum emission peak wavelength of about 600 nm to about 650 nm (e.g., about 620 nm to about 650 nm).

[0092] The second color conversion layer 230b may overlap with a light-emitting diode (LED) corresponding to the second pixel PXb, and may convert light incident from the LED into light of a second wavelength. The second wavelength of light may be green light having a maximum emission peak wavelength of about 500 nm to about 550 nm (e.g., about 510 nm to about 550 nm).

[0093] The transmissive layer 230c may overlap with the light-emitting diode (LED) corresponding to the third pixel PXc and may transmit light incident from the LED. The light passing through the transmissive layer 230c may be light of a third wavelength. The third wavelength light is blue light having a maximum emission peak wavelength of about 380 nm to about 480 nm (such as greater than about 420 nm, greater than about 430 nm, greater than about 440 nm, or greater than about 445 nm and less than or equal to about 470 nm, less than or equal to about 460 nm, or less than or equal to about 455 nm).

[0094] The first color conversion layer 230a and the second color conversion layer 230b may respectively include a first quantum dot 231a and a second quantum dot 231b. For example, light incident on the first color conversion layer 230a can be converted into light of a first wavelength by the first quantum dot 231a and emitted. Light incident on the second color conversion layer 230b can be converted into light of a second wavelength by the second quantum dot 231b and emitted. The first color conversion layer 230a, the second color conversion layer 230b, and the transmission layer 230c may include a scatterer 232. The scatterer 232 can improve light efficiency by scattering light incident on the first color conversion layer 230a, the second color conversion layer 230b, and the transmission layer 230c.

[0095] Scatterer 232 may be metal oxide particles and / or organic particles. Examples of metal oxides include TiO2, ZrO2, Al2O3, In2O3, ZnO, and SnO2. Examples of organic particle materials include acrylic resins and urethane resins. Scatterer 232 may scatter light in random directions, regardless of the incident direction of the incident light.

[0096] The first quantum dot 231a and the second quantum dot 231b (hereinafter referred to as semiconductor nanocrystals) may each individually comprise a group II-VI compound, a group III-V compound, a group IV-VI compound, a group IV element or compound, a group I-III-VI compound, a group II-III-VI compound, a group I-II-IV-VI compound, or a combination thereof.

[0097] Group II-VI compounds may include binary compounds selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS and mixtures thereof, and compounds selected from the group consisting of AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe Ternary compounds selected from the group consisting of CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and mixtures thereof, and quaternary compounds selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and mixtures thereof. Compounds II-VI may also include group III metals.

[0098] Group III-V compounds include binary compounds selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof; ternary compounds selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InNAs, InNSb, InPAs, InZnP, InPSb, and mixtures thereof; and quaternary compounds selected from the group consisting of GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, InZnP, and mixtures thereof. Group III-V compounds may also include Group II metals (e.g., InZnP).

[0099] Group IV-VI compounds include binary compounds selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe and mixtures thereof; ternary compounds selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and mixtures thereof; and quaternary compounds selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe and mixtures thereof.

[0100] Group IV elements or compounds include single-element compounds selected from the group consisting of Si, Ge and combinations thereof, and binary compounds selected from the group consisting of SiC, SiGe and combinations thereof.

[0101] Group I-III-VI compounds can be selected from CuInSe2, CuInS2, CuInGaSe, and CuInGaS.

[0102] Group II-III-VI compounds include ZnGaS, ZnAlS, ZnInS, ZnGaSe, ZnAlSe, ZnInSe, ZnGaTe, ZnAlTe, ZnInTe, ZnGaO, ZnAlO, ZnInO, HgGaS, HgAlS, HgInS, HgGaSe, HgAlSe, HgInSe, HgGaTe, HgAlTe, HgInTe, MgGaS, MgAlS, MgInS, MgGaSe, MgAlSe, MgInSe, and combinations thereof.

[0103] Group I-II-IV-VI compounds can be selected from CuZnSnSe and CuZnSnS.

[0104] Quantum dots may not contain cadmium. Quantum dots may include semiconductor nanocrystals based on group III-V compounds containing indium and phosphorus. Group III-V compounds may also contain zinc. Quantum dots may include semiconductor nanocrystals based on group II-VI compounds containing chalcogen elements (e.g., sulfur, selenium, tellurium, or combinations thereof) and zinc.

[0105] In quantum dots, the aforementioned binary, ternary, and / or quaternary compounds can exist in a uniform concentration within the particles, or they can exist in the same particles with concentration distributions that are partially divided into different states. Additionally, a quantum dot can have a core / shell structure surrounding other quantum dots. The interface between the core and shell can have a concentration gradient in which the concentration of elements present in the shell decreases towards the center.

[0106] In some embodiments, the quantum dot may have a core-shell structure comprising a core containing the nanocrystals described above and a shell surrounding the core. The shell of the quantum dot may serve as a protective layer to maintain semiconductor properties by preventing or reducing chemical denaturation of the core and / or as a charging layer to impart electrophoretic properties to the quantum dot. The shell may be a single layer or multiple layers. The interface between the core and the shell may have a concentration gradient in which the concentration of the element present in the shell decreases toward the center. Examples of shells for quantum dots include metal or nonmetal oxides, semiconductor compounds, or combinations thereof.

[0107] Metal or nonmetal oxides can be illustrated by binary compounds such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, and NiO, or ternary compounds such as MgAl2O4, CoFe2O4, NiFe2O4, and CoMn2O4.

[0108] Semiconductor compounds may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, etc.

[0109] Quantum dots can have a full width at half maximum (FWHM) of an emission wavelength spectrum of about 45 nm or less, about 40 nm or less, or about 30 nm or less, and can improve color purity or color reproducibility within this range. Additionally, since light emitted through these quantum dots is emitted in all directions, viewing angles can be improved.

[0110] Quantum dots can have different band gaps between their shell and core materials. For example, the band gap of the shell material can be larger or smaller than that of the core material. Quantum dots can have multiple shells. In a multi-shell system, the band gap of the outer layer can be larger than that of the inner layer (i.e., the layer closest to the core). Conversely, the band gap of the outer layer can be smaller than that of the inner layer.

[0111] The shape of quantum dots is not particularly limited. For example, the shape of quantum dots can include spheres, polyhedra, pyramids, pediments, squares, cuboids, nanotubes, nanorods, nanowires, nanosheets, or combinations thereof.

[0112] Quantum dots may include organic ligands (e.g., having hydrophobic and / or hydrophilic portions). The organic ligand portion may be bonded to the surface of the quantum dot. Organic ligands may include RCOOH, RNH2, R2NH, R3N, RSH, R3PO, R3P, ROH, RCOOR, RPO(OH)2, RHPOOH, R2POOH, or combinations thereof. Here, R may independently be a substituted or unsubstituted alkyl group of C3 to C40 (e.g., C5 or larger and C24 or smaller), a substituted or unsubstituted alkenyl group of C3 to C40, a substituted or unsubstituted aliphatic hydrocarbon group of C6 to C40 (e.g., C6 or larger and C20 or smaller), or combinations thereof.

[0113] Examples of organic ligands include: thiols such as methanethiol, ethanethiol, propanethiol, butanethiol, pentylenetetil, hexanethiol, octylthiol, dodecylthiol, hexadecylthiol, octadecylthiol, and benzylthiol; amines such as methylamine, ethylamine, propylamine, butylamine, pentylemine, hexylamine, octylamine, nonylamine, decylamine, dodecylamine, hexadecylamine, octadecylamine, dimethylamine, diethylamine, dipropylamine, tributylamine, and trioctylamine; carboxylic acid compounds such as formic acid, acetic acid, propionic acid, butyric acid, valeric acid, hexanoic acid, heptanoic acid, octanoic acid, dodecanoic acid, hexadecanoic acid, octadecanoic acid, oleic acid, and benzoic acid; and methylphosphine, ethylphosphine, propylphosphine, butylphosphine, and so on. Phosphine compounds such as pentylphosphine, octylphosphine, dioctylphosphine, tributylphosphine, and trioctylphosphine; phosphine compounds such as methylphosphine oxide, ethylphosphine oxide, propylphosphine oxide, butylphosphine oxide, pentylphosphine oxide, tributylphosphine oxide, octylphosphine oxide, dioctylphosphine oxide, trioctylphosphine oxide, or their oxide compounds; diphenylphosphine, triphenylphosphine compounds, or their oxide compounds; C5 to C20 alkylphosphonic acids, C5 to C20 alkylphosphonic acids, such as hexylphosphonic acid, octylphosphonic acid, dodecylphosphonic acid, tetradecylphosphonic acid, hexadecylphosphonic acid, octadecylphosphonic acid, etc. Quantum dots may contain hydrophobic organic ligands alone or in mixtures of one or more types. The hydrophobic organic ligands may not contain a photopolymerizable portion (e.g., acrylate groups, methacrylate groups, etc.).

[0114] A first insulating layer 241 may be located below the dam 210, the first well 212a, the second well 212b, the third well 212c, the first color conversion layer 230a, the second color conversion layer 230b, and the transmission layer 230c. The first insulating layer 241 may have a shape that covers the dam 210, the first well 212a, the second well 212b, the third well 212c, the first color conversion layer 230a, the second color conversion layer 230b, and the transmission layer 230c. The first insulating layer 241 may contact the second insulating layer 242 at the first well 212a, the second well 212b, and the third well 212c. The first insulating layer 241 may comprise an inorganic insulating material, such as silicon oxide or silicon nitride.

[0115] The adhesive unit gap retaining layer 400 may be located below the first insulating layer 241. The adhesive unit gap retaining layer 400 may also be located directly on the first insulating layer 241. The adhesive unit gap retaining layer 400 can combine the display unit 100 and the color conversion unit 200. A display panel 10 can be formed through the adhesive unit gap retaining layer 400. Some of the adhesive unit gap retaining layers 400 may be located within the first well 212a, the second well 212b, and the third well 212c. The adhesive unit gap retaining layer 400 is located on the lower surface of the first color conversion layer 230a and the second color conversion layer 230b or the transmissive layer 230c, and may form an air gap 420.

[0116] The adhesive unit gap retaining layer 400 may include an adhesive unit gap retaining portion 410 and an air gap 420, and may additionally include a dummy element 430.

[0117] According to some embodiments, the adhesive unit gap retaining portion 410 can be applied to an area overlapping with at least one of the dam 210, the first well 212a, the second well 212b, the third well 212c, the first color conversion layer 230a, the second color conversion layer 230b, and the transmissive layer 230c. For example, the adhesive unit gap retaining portion 410 can be applied by overlapping with at least one of the dam 210, the first well 212a, the second well 212b, the third well 212c, the first color conversion layer 230a, the second color conversion layer 230b, and the transmissive layer 230c.

[0118] The bonding unit gap retaining portion 410 may include an adhesive organic material member 411 and a bead spacer 412. The bead spacer 412 is located within and may be surrounded by the adhesive organic material member 411, and according to some embodiments, a portion of the bead spacer 412 may be exposed to the outside of the adhesive organic material member 411. The bead spacer 412 may contact the display unit 100 and the color conversion unit 200 to maintain the gap between them.

[0119] The adhesive organic material component 411 may include a thermosetting resin. Examples of thermosetting resins include epoxy resins. Epoxy resins may include bisphenol, o-cresol, polyfunctional epoxy resins, amino epoxy resins, heterocyclic epoxy resins, substituted epoxy resins, and naphthol-based epoxy resins, and more specifically include bisphenol A type epoxy resins, bisphenol F type epoxy resins, hydrogenated bisphenol type epoxy resins, alicyclic epoxy resins, aromatic epoxy resins, phenolic type, dicyclopentadiene type epoxy resins, etc., and compounds having these epoxy groups may be used alone or in combination. Currently available epoxy resins include: bisphenol compounds (such as Epiclon 830-S, Epiclon EXA-830CRP, Epiclon EXA 850-S and Epiclon EXA-850CRP from Nippon Ink Chemical, Epiclon EXA-835LV, Epicote 807, Epicote 815, Epicote 825, Epicote 827, Epicote 828, Epicote 834, Epicote 1001, Epicote 1004, Epicote 1007, Epicote 1009 from Yuka Shell Epoxy, DER-330, DER-301, DER-361 from Dow Chemical, and YD-128 and YDF-170 from Kukdo Chemical), o-cresyl phenolic varnishes (such as Kukdo...). Chemical's YDCN-500-1P, YDCN-500-4P, YDCN-500-5P, YDCN-500-7P, YDCN-500-80P, YDCN-500-90P, and Nippon Kayaku's EOCN-102S, EOCN-103S, EOCN-104S, EOCN-1012, EOCN-1025, and EOCN-1027; multifunctional epoxy resins such as Epon 1031S from Yuka Shell Epoxy, Araldite0163 from Ciba Specialty Chemicals, and Detacol EX-611, Detacol EX-614, Detacol EX-614B, Detacol EX-622, Detacol EX-512, Detacol EX-521, and Detacol EX-421 from Nagasub. EX-411 and Detacol EX-321), amino epoxy resins (such as Epicote 604 from Yuka Shell Epoxy, and from Dokko)YH-434 from Chemical Company, TETRAD-X and TETRAD-C from Mitsubishi Gas Chemical Company, ELM-120 from Sumitomo Chemical Company, heterocyclic epoxy resins (such as PT-810 from Ciba Specialty Chemical Company), substituted epoxy resins (such as ERL-4234, ERL-4299, ERL-4221 and ERL-4206 from UCC), and naphthol-based epoxy resins (such as Epiclon HP-4032, Epiclon HP-4032D, Epiclon HP-4700, Epiclon 4701, etc. from Nippon Ink Chemical Company) can be used alone or in combination of two or more types. For excellent film coating properties, phenoxy resins can be used, as well as high molecular weight resins such as Epicoto 1256 from JER, PKHH from Inchem, and YP-70 from Doto Kasei.

[0120] The bead spacer 412 may have a transparent spherical shape. The diameter of the bead spacer 412 may be about 10 μm or smaller. The bead spacer 412 may be made of a resin such as silica or polystyrene.

[0121] Referring to FIG. 3, the adhesive unit gap retaining layer 400 includes a space not filled by the adhesive unit gap retaining portion 410, namely, an air gap 420. Since the refractive index of the air gap 420 is the same as that of air (approximately 1), the air gap 420 can be used as a low refractive index layer. In this way, light efficiency can be improved. For example, in the embodiment of FIG. 3, the air gap 420 is formed on the second color conversion layer 230b, thus improving the light efficiency of the second pixel PXb. For example, the air gap 420 can be formed on the first color conversion layer 230a and the second color conversion layer 230b or the transmission layer 230c to improve light efficiency.

[0122] The dummy element 430 is the portion of the same material as the bonding unit gap retaining portion 410 located in the first well 212a, the second well 212b, and the third well 212c, and includes the bonding organic material element 411 and the bead spacer 412. Since the dummy element 430 does not overlap with the light-emitting diode (LED) on the plane, it does not affect luminous efficiency or display quality. The bead spacer 412 of the dummy element 430 is exposed to the outside of the bonding organic material element 411.

[0123] A second insulating layer 242 may be positioned between the dam 210, the first color conversion layer 230a and the second color conversion layer 230b, the transmission layer 230c, the first well 212a, the second well 212b, and the third well 212c, and the first color filter 250a, the second color filter 250b, and the third color filter 250c. The second insulating layer 242 is located below the first color filter 250a, the second color filter 250b, and the third color filter 250c, and may be formed during the process while simultaneously covering the first color filter 250a, the second color filter 250b, and the third color filter 250c. The second insulating layer 242 planarizes the lower surfaces that contact the upper surface of the dam 210, the first color conversion layer 230a and the second color conversion layer 230b, the transmission layer 230c, and the first well 212a, the second well 212b, and the third well 212c. The second insulating layer 242 may include an organic insulating material and may be a single layer or multiple layers.

[0124] The first color filter 250a, the second color filter 250b, and the third color filter 250c may overlap with the opening of the pixel defining layer 185. The first color filter 250a can transmit light of a first wavelength and absorb light of other wavelengths, the second color filter 250b can transmit light of a second wavelength and absorb light of other wavelengths, and the third color filter 250c can transmit light of a third wavelength and absorb light of other wavelengths.

[0125] The first color filter 250a, the second color filter 250b, and the third color filter 250c overlap with the first color conversion layer 230a, the second color conversion layer 230b, and the transmission layer 230c, respectively. The first color filter 250a, the second color filter 250b, and the third color filter 250c correspond to the first pixel PXa, the second pixel PXb, and the third pixel PXc, respectively. Therefore, the purity of the first wavelength light (corresponding to the first pixel PXa), the second wavelength light (corresponding to the second pixel PXb), and the third wavelength light (corresponding to the third pixel PXc) emitted to the outside of the display panel 10 can be increased. The first wavelength light, the second wavelength light, and the third wavelength light can be red light, green light, and blue light, respectively.

[0126] At the boundaries of the first pixel PXa, the second pixel PXb, and the third pixel PXc, the first color filter 250a, the second color filter 250b, and the third color filter 250c can overlap each other to form a light-blocking area. As shown in the figure, the first color filter 250a, the second color filter 250b, and the third color filter 250c can all overlap to form a light-blocking area, but two color filters can also overlap to form a light-blocking area. For example, at the boundary between the first pixel PXa and the second pixel PXb, the first color filter 250a and the second color filter 250b can overlap; at the boundary between the second pixel PXb and the third pixel PXc, the second color filter 250b and the third color filter 250c can overlap; and at the boundary between the third pixel PXc and the first pixel PXa, the third color filter 250c and the first color filter 250a can overlap. The first well 212a, the second well 212b, and the third well 212c are located at the boundaries of the first pixel PXa, the second pixel PXb, and the third pixel PXc. Therefore, the first color filter 250a, the second color filter 250b, and the third color filter 250c can overlap each other above the first well 212a, the second well 212b, and the third well 212c to form a light-blocking region. The first color filter 250a, the second color filter 250b, and the third color filter 250c are stacked on the second insulating layer 242 in this order, but the first color filter 250a, the second color filter 250b, and the third color filter 250c can also be stacked in a different order. Instead of overlapping the second color filter 250a, the second color filter 250b, and the third color filter 250c, the light-blocking region can be provided by forming a light-blocking member containing black pigment or dye.

[0127] Referring to Figure 2, an example is shown where a third well 212c formed in a dam 210 located between adjacent second pixels PXb is divided into multiple portions. The third well 212c may include a relatively large first portion 212c1 located at the center and a second portion 212c2 surrounding the first portion 212c1. The first portion 212c1 and the second portion 212c2 may be separated by the dam 210. If the third well 212c is formed to be divided in this way, the portions of the dam 210 including the third well 212c may be connected to securely form the dam 210.

[0128] Referring to Figure 3, the location where the adhesive unit gap retaining portion 410 may exist in the adhesive unit gap retaining layer 400 is shown as the lower surface of the first color conversion layer 230a and the transmissive layer 230c. The adhesive unit gap retaining portion 410 is located below the first insulating layer 241. According to some embodiments, the adhesive unit gap retaining portion 410 may be formed at a position overlapping with the second color conversion layer 230b, and may be formed to overlap with at least one of the first color conversion layer 230a, the second color conversion layer 230b, and the transmissive layer 230c. An air gap 420 filled with air may be formed on the second color conversion layer 230b in which the adhesive unit gap retaining portion 410 is not filled. The light efficiency of the second pixel PXb may be improved due to the air gap 420 formed on the transmissive layer 230c.

[0129] Figures 4 and 5 are cross-sectional views taken along line A-A' in Figure 2 according to some embodiments.

[0130] First, referring to FIG4, the difference from the embodiment of FIG3 described above is that the dummy element 430 is not formed in the adhesive unit gap retaining layer 400. The adhesive unit gap retaining portion 410 exists only on the first color conversion layer 230a and the transmission layer 230c. This is because the height of the dam 210 is higher than the height of the first color conversion layer 230a and the transmission layer 230c, so that the adhesive unit gap retaining portion 410 does not overflow into the first well 212a and the second well 212b. According to some embodiments, the adhesive unit gap retaining portion 410 may be formed at a position overlapping with the second color conversion layer 230b, and may be formed to overlap with at least one of the first color conversion layer 230a, the second color conversion layer 230b, and the transmission layer 230c. As in the embodiment of FIG3, an air gap 420 filled with air can be formed above the second color conversion layer 230b, which is an empty space in which the adhesive unit gap holding portion 410 is not filled, and inside the first well 212a, the second well 212b and the third well 212c.

[0131] Referring to Figure 5, an embodiment is shown in which the air gap 420 is not formed in the adhesive unit gap retaining layer 400 and the entire air gap 420 can be filled by the adhesive unit gap retaining portion 410. The adhesive unit gap retaining portion 410 can be formed when a mass inkjet process is applied. The dummy element 430 formed inside the first well 212a and the second well 212b can be continuously formed with the adhesive unit gap retaining portion 410. The dummy element 430 does not affect the light efficiency.

[0132] Figures 6 to 10 are schematic cross-sectional views illustrating the manufacturing process of a display panel according to some embodiments.

[0133] Figures 6 to 10 illustrate the manufacturing process of the display panel 10 shown in Figure 3.

[0134] Referring to Figure 6, the process first involves forming a first color conversion layer 230a and a second color conversion layer 230b, a transmission layer 230c, a first well 212a, a second well 212b, and a third well 212c, as well as a dam 210, on a second insulating layer 242, and then covering them with a first insulating layer 241. Next, an adhesive unit gap retaining portion 410 is applied to the first insulating layer 241. At this time, the orientation of the adhesive unit gap retaining portion 410 is at least one of the first color conversion layer 230a, the second color conversion layer 230b, and the transmission layer 230c, rather than the dam 210 and the first well 212a, the second well 212b, and the third well 212c. The adhesive unit gap retaining portion 410 is formed by an inkjet process. The adhesive unit gap retaining portion 410 is a mixture of an adhesive organic material part 411 and a bead spacer 412.

[0135] Referring to Figure 7, in the step of applying the adhesive unit gap retaining portion 410, a portion of the adhesive unit gap retaining portion 410 overflows into the first well 212a, the second well 212b, and the third well 212c to form a dummy element 430. Since the dummy element 430 is not positioned to overlap with the light-emitting diode (LED) on the plane, but rather overlaps with and is blocked by the overlapping first color filter 250a, the second color filter 250b, and the third color filter 250c, the dummy element 430 does not affect the light efficiency and display quality.

[0136] Referring to FIG8, after the display unit 100 formed on the lower substrate 110 is bonded, the applied adhesive unit gap retaining portion 410 and the dummy element 430 overflowing into the first well 212a, the second well 212b, and the third well 212c are solidified together. An air gap 420 is formed in the space where the adhesive unit gap retaining portion 410 is not present. Bead spacers 412 located on the first color conversion layer 230a and the second color conversion layer 230b or the transmissive layer 230c are connected to the second inorganic layer 193 of the display unit 100 and the color conversion unit 200, and are in contact with the first insulating layer 241 to maintain the gap between the display unit 100 and the color conversion unit 200. Since the dummy element 430 does not overlap with the light-emitting diode (LED) in the plane, the dummy element 430 does not affect the light efficiency or display quality. In the embodiment of FIG8, the display unit 100 is represented by the lower substrate 110 and the second inorganic layer 193 by necessarily omitting some of the components of the display unit 100 in the embodiment of FIG3.

[0137] In the following sections, the modified embodiments of Figures 7 and 8 will be examined with reference to Figures 9 and 10.

[0138] Figures 9 and 10 illustrate the manufacturing process of the display panel 10 according to some embodiments.

[0139] Referring to FIG9, the difference from the embodiment described above lies in whether or not a dummy element 430 is formed. After the adhesive unit gap retaining portion 410 is applied, the height of the dam 210 is formed to be higher than the height of the first color conversion layer 230a and the second color conversion layer 230b or the height of the transmissive layer 230c, so that the adhesive unit gap retaining portion 410 does not overflow into the first well 212a, the second well 212b and the third well 212c. In other words, the dummy element 430 is not formed.

[0140] Referring to FIG. 10, after the display unit 100 formed on the lower substrate 110 is bonded, the applied adhesive unit gap retaining portion 410 is cured. An air gap 420 is formed in the space where the adhesive unit gap retaining portion 410 is not present. The bead spacer 412 located above the first color conversion layer 230a, the second color conversion layer 230b, or the transmissive layer 230c contacts the second inorganic layer 193 of the display unit 100 and the first insulating layer 241 of the color conversion unit 200, thereby maintaining the gap between the display unit 100 and the color conversion unit 200. In the embodiment of FIG. 10, the display unit 100 is represented by the lower substrate 110 and the second inorganic layer 193 by necessarily omitting some of the components of the display unit 100 in the embodiment of FIG. 3.

[0141] As shown in Figures 6 to 10, the adhesive organic material component 411 and the bead spacer 412 are positioned in one step using an inkjet process, which simplifies the process and reduces costs. By adjusting the specific gravity of the bead spacer 412 present in the droplets of the adhesive unit gap holding part 410 to be applied and the number of applications, the amount of material consumed and the time required for the manufacturing process can be reduced.

[0142] In the following text, the modified embodiments of Figures 3 to 5 will be examined with reference to Figures 11 to 13. Descriptions of components identical to those described in Figures 3 to 5 will be omitted.

[0143] Figures 11 to 13 are cross-sectional views taken along line A-A' in Figure 2 according to some embodiments.

[0144] Referring to Figures 11 to 13, the difference is that the first insulating layer 241 is excluded from the embodiments of Figures 3 to 5 above, and even if the adhesive unit gap retaining portion 410, the first color conversion layer 230a, the second color conversion layer 230b, and the transmissive layer 230c are formed and cured, the impact on display quality is minimal.

[0145] In Figures 11 to 13, the adhesive unit gap retaining portion 410 is applied directly to the corners of the first color conversion layer 230a, the second color conversion layer 230b, the transmission layer 230c, or the dam 210. In this way, the dam 210 exhibits liquid repellency relative to the adhesive unit gap retaining portion 410. For example, during the inkjet process of forming the adhesive unit gap retaining layer 400, the diffusion of droplets misdeposited at or on the corners of the dam 210 is controlled to prevent or reduce residues on the dam 210, at the corners of the dam 210, or in the first well 212a, the second well 212b, and the third well 212c, and the size of the misdeposited droplets is reduced. If misdeposited droplets are present, they can interfere with the formation of the air gap 420 and thus increase or decrease the light efficiency, so it may be necessary to remove the misdeposited droplets or reduce their size. As a way to reduce the amount of droplets that are mistakenly deposited, the height of the dam 210 can be set higher than the height of the first color conversion layer 230a, the second color conversion layer 230b, and the height of the transmission layer 230c.

[0146] Referring to FIG11, the orientation in which the adhesive unit gap retaining portion 410 may exist in the adhesive unit gap retaining layer 400 is shown as the lower surface of the first color conversion layer 230a and the transmissive layer 230c. Since the first insulating layer 241 is absent, the adhesive unit gap retaining portion 410 directly contacts the first color conversion layer 230a and the transmissive layer 230c. According to some embodiments, the adhesive unit gap retaining portion 410 may be formed at a position overlapping with the second color conversion layer 230b, and may be formed to overlap with at least one of the first color conversion layer 230a, the second color conversion layer 230b, and the transmissive layer 230c. An air gap 420 filled with air may be formed on the second color conversion layer 230b in which the adhesive unit gap retaining portion 410 is not filled.

[0147] Figures 12 and 13 are cross-sectional views taken along line A-A' in Figure 2 according to some embodiments.

[0148] First, referring to FIG12, the difference from the embodiment of FIG11 described above is that the dummy element 430 is not formed in the adhesive unit gap retaining layer 400. The adhesive unit gap retaining portion 410 exists only on the first color conversion layer 230a and the transmission layer 230c. This is formed by controlling the diffusion of mis-deposited droplets caused by the liquid repellency of the dam 210. According to some embodiments, the adhesive unit gap retaining portion 410 may be formed at a position overlapping with the second color conversion layer 230b, and may be formed by overlapping with at least one of the first color conversion layer 230a, the second color conversion layer 230b, and the transmission layer 230c. As in the embodiment of FIG11, an air gap 420 filled with air is formed above the second color conversion layer 230b, which is an empty space in which the adhesive unit gap retaining portion 410 is not filled, and inside the first well 212a, the second well 212b, and the third well 212c.

[0149] Referring to Figure 13, an embodiment is shown in which the air gap 420 is not formed in the adhesive unit gap retaining layer 400 and the entire air gap 420 can be filled by the adhesive unit gap retaining portion 410. The adhesive unit gap retaining portion 410 can be formed when a mass inkjet process is applied. The dummy element 430 formed inside the first well 212a and the second well 212b can be continuously formed with the adhesive unit gap retaining portion 410. The dummy element 430 does not affect the light efficiency.

[0150] In the following text, the modified embodiments of Figures 6 to 10 will be examined with reference to Figures 14 to 18.

[0151] Figures 14 to 18 are schematic cross-sectional views illustrating the manufacturing process of a display panel according to some embodiments.

[0152] Referring to Figures 14 to 18, the difference is that the first insulating layer 241 is excluded from the embodiments of Figures 6 to 10 described above.

[0153] Referring to Figure 14, firstly, the process is performed to form a first color conversion layer 230a and a second color conversion layer 230b, a transmission layer 230c, a first well 212a, a second well 212b, and a third well 212c, as well as a dam 210, on the second insulating layer 242. Next, an adhesive unit gap retaining portion 410 is applied to at least one of the first color conversion layer 230a, the second color conversion layer 230b, and the transmission layer 230c. In this way, the dam 210 exhibits liquid repellency relative to the adhesive unit gap retaining portion 410. The adhesive unit gap retaining portion 410 is formed by an inkjet process. The adhesive unit gap retaining portion 410 is formed by mixing an adhesive organic material component 411 and a bead spacer 412.

[0154] Referring to Figure 15, in the step of applying the adhesive unit gap retaining portion 410, a portion of the adhesive unit gap retaining portion 410 overflows into the first well 212a, the second well 212b, and the third well 212c to form a dummy element 430. In this way, if the liquid repellency of the dam 210 is insufficient and the amount applied is large, the dummy element 430 can be formed.

[0155] Referring to FIG. 16, after the display unit 100 formed on the lower substrate 110 is bonded, the applied adhesive unit gap retaining portion 410 and the dummy member 430 overflowing into the first well 212a, the second well 212b, and the third well 212c are solidified together. An air gap 420 is formed in the space where the adhesive unit gap retaining portion 410 is not present. The bead spacer 412, located directly above the first color conversion layer 230a and the second color conversion layer 230b or the transmissive layer 230c, contacts the second inorganic layer 193 of the display unit 100 and maintains the gap between the display unit 100 and the color conversion unit 200. In the embodiment of FIG. 16, the display unit 100 is represented by the lower substrate 110 and the second inorganic layer 193 by necessarily omitting some of the components of the display unit 100 in the embodiment of FIG. 3.

[0156] In the following sections, the modified embodiments of Figures 15 and 16 will be examined with reference to Figures 17 and 18.

[0157] Figures 17 and 18 illustrate the manufacturing process of the display panel 10 according to some embodiments.

[0158] Referring to Figure 17, the difference from the embodiment described above lies in whether or not a dummy element 430 is formed. The applied adhesive unit gap retaining portion 410 does not overflow into the first well 212a, the second well 212b, and the third well 212c due to the liquid-repellent nature of the dam 210. In other words, a dummy element 430 is not formed. The liquid-repellent nature of the dam 210 can be provided by using a photosensitive organic material containing a liquid-repellent material in the dam 210 or by making the surface of the dam 210 liquid-repellent.

[0159] Referring to FIG. 18, after the display unit 100 formed on the lower substrate 110 is bonded, the applied adhesive unit gap retaining portion 410 is cured. An air gap 420 is formed in the space where the adhesive unit gap retaining portion 410 is not present. Bead spacers 412 positioned above the first color conversion layer 230a and the second color conversion layer 230b or the transmissive layer 230c contact the second inorganic layer 193 of the display unit 100 and the first insulating layer 241 of the color conversion unit 200, thereby maintaining the gap between the display unit 100 and the color conversion unit 200. In the embodiment of FIG. 18, the display unit 100 is represented by the lower substrate 110 and the second inorganic layer 193 by necessarily omitting some of the components of the display unit 100 in the embodiment of FIG. 3.

[0160] In the following description, a display panel 10 according to some embodiments will be described with reference to Figures 19 to 21. Some repeated descriptions of some components that are the same as those described in Figure 2 may be omitted.

[0161] Figure 19 is a schematic plan view of a display area in a display panel according to some embodiments, and Figures 20 and 21 are cross-sectional views taken along line B-B' in Figure 19 according to some embodiments.

[0162] Referring to Figure 19, the structure of dam 210 is different from the above embodiment.

[0163] Dam 210 may not include the first well 212a, the second well 212b, and the third well 212c. In other words, the first opening 211a, the second opening 211b, and the third opening 211c may be included by dam 210.

[0164] Referring to Figure 20, the color conversion unit 200 may include a dam 210, a first color conversion layer 230a and a second color conversion layer 230b, a transmission layer 230c, a first insulating layer 241 and a second insulating layer 242-1, an adhesive unit gap retaining layer 400, a first color filter 250a, a second color filter 250b and a third color filter 250c, and an overlay layer 260.

[0165] Dam 210 may be located on encapsulation layer 190. For example, the lower surface of dam 210 may contact the upper surface of encapsulation layer 190. The lower surfaces of the first color conversion layer 230a, the second color conversion layer 230b, and the transmissive layer 230c may contact the upper surface of encapsulation layer 190.

[0166] Since there are no first wells 212a, second wells 212b, and third wells 212c, the adhesive unit gap retaining layer 400 can be applied to at least one of the dam 210, the first color conversion layer 230a, the second color conversion layer 230b, and the transmissive layer 230c. The adhesive unit gap retaining portion 410 can be applied to the first insulating layer 241. For example, the adhesive unit gap retaining portion 410 can be applied to overlap with at least one of the dam 210, the first color conversion layer 230a, the second color conversion layer 230b, and the transmissive layer 230c.

[0167] In the adhesive unit gap retaining layer 400, an air gap 420 may be formed in a space not filled by the adhesive unit gap retaining portion 410. However, since there are no first well 212a, second well 212b and third well 212c, the adhesive unit gap retaining portion 410 may not include the dummy member 430.

[0168] The second insulating layer 242-1 is located on the adhesive unit gap retaining layer 400. The second insulating layer 242-1 may directly cover the dam 210, the first color conversion layer 230a, the second color conversion layer 230b, and the transmission layer 230c. The second insulating layer 242-1 may include an inorganic insulating material, such as silicon oxide or silicon nitride.

[0169] The first color filter 250a, the second color filter 250b, and the third color filter 250c may be formed on the adhesive unit gap retaining layer 400. The first color filter 250a, the second color filter 250b, and the third color filter 250c may be formed on the second insulating layer 242-1.

[0170] The overlay 260 may be positioned on the first color filter 250a, the second color filter 250b, and the third color filter 250c. The overlay 260 may include inorganic and / or organic insulating materials, and may be a single layer or multiple layers. An anti-reflective layer that reduces external light reflection may be positioned on the overlay 260.

[0171] Referring to Figure 21, an embodiment is shown in which no air gap 420 is formed in the adhesive unit gap retaining layer 400 and the entire air gap 420 can be filled by the adhesive unit gap retaining portion 410. When a mass inkjet process is applied, the adhesive unit gap retaining portion 410 can be formed.

[0172] In the following sections, cross-sectional views of a display panel 10 according to some embodiments will be viewed with reference to Figures 22 and 23. Some repeated descriptions of components identical to those described in Figure 19 may be omitted.

[0173] Figures 22 and 23 are cross-sectional views taken along line B-B' in Figure 19 according to some embodiments.

[0174] In Figures 22 and 23, the first insulating layer 241 can be excluded from Figures 20 and 21. Referring to Figures 22 and 23, the first insulating layer 241 can be excluded, and the adhesive unit gap retaining portion 410 can be applied to the dam 210 or directly above its edge. In other words, the dam 210 can exhibit liquid repellency relative to the adhesive unit gap retaining portion 410. The second insulating layer 242-1 can contact the lower surfaces of the first color filter 250a, the second color filter 250b, and the third color filter 250c.

[0175] In the following text, the structure of the pixels according to some embodiments will be examined by means of circuitry with reference to FIG24.

[0176] Figure 24 is a circuit diagram of a pixel of a display device according to some embodiments.

[0177] Referring to Figure 24, a pixel PX may include a first transistor T1 to a third transistor T3 and a storage capacitor C.ST The light-emitting diode (LED) can be an organic light-emitting diode or an inorganic light-emitting diode. The first transistor T1 to the third transistor T3 can be n-type transistors, and at least some of the first transistor T1 to the third transistor T3 can be p-type transistors.

[0178] The gate electrode of the first transistor T1 can be connected to the storage capacitor C. ST The first electrode of the first transistor T1 can be connected to the output drive voltage EL. VDD The driving voltage line VL1, and the second electrode of the first transistor T1 can be connected to the anode of the light-emitting diode LED and the storage capacitor C. ST The second electrode.

[0179] The first transistor T1 can receive the data voltage V according to the switching operation of the second transistor T2. DATA And according to the storage capacitor C ST The voltage in the circuit is used to supply the driving current to the light-emitting diode (LED).

[0180] The gate electrode of the second transistor T2 can be connected to the first gate line GL1, which transmits the first scan signal SC. The first electrode of the second transistor T2 can be connected to a line capable of transmitting data voltage V. DATA Or reference voltage V REF The data line DL. The second electrode of the second transistor T2 can be connected to the storage capacitor C. ST The first electrode and the gate electrode of the first transistor T1. The second transistor T2 can be turned on according to the first scan signal SC to transmit the reference voltage V. REF Or data voltage V DATA The signal is transmitted to the gate electrode of the first transistor T1.

[0181] The gate electrode of the third transistor T3 can be connected to the second gate line GL2, which transmits the second scan signal SS. The first electrode of the third transistor T3 can be connected to the storage capacitor C. ST The second electrode of the first transistor T1 and the anode. The second electrode of the third transistor T3 can be connected to the transmission initialization voltage V. INT The initialization voltage line VL3. The third transistor T3 can be turned on according to the second scan signal SS, and will set the initialization voltage V. INT It is transferred to the anode to initialize the anode voltage.

[0182] Storage capacitor C ST The first electrode can be connected to the gate electrode of the first transistor T1, and the storage capacitor C ST The second electrode can be connected to the first electrode and anode of the third transistor T3. The cathode of the light-emitting diode (LED) can be connected to the common voltage EL.VSS The common voltage line is VL2. Each light-emitting diode (LED) can constitute a pixel PX, and the anode and cathode of the LED can be called the pixel electrode and the common electrode, respectively.

[0183] A light-emitting diode (LED) can emit light with a brightness (grayscale) based on the drive current generated by a first transistor T1.

[0184] An example of the operation of the circuit shown in Figure 24 (particularly during a frame) will be described using the case where the first transistor T1 through the third transistor T3 are all n-channel transistors.

[0185] When a frame begins, a high-level first scan signal SC and a high-level second scan signal SS are supplied during the initialization cycle, enabling the second transistor T2 and the third transistor T3 to conduct. The reference voltage V from the data line DL... REF The second transistor T2, which is in operation, supplies power to the gate electrode of the first transistor T1 and the storage capacitor C. ST The first electrode, and the initial voltage V INT The third transistor T3, which is in operation, supplies power to the second electrode and anode of the first transistor T1. Therefore, during the initialization cycle, the anode can be initialized to the initialization voltage V. INT Reference voltage V REF With initial voltage V INT The voltage difference between them can be stored in the storage capacitor C. ST middle.

[0186] Next, when the second scan signal SS reaches a low level while the first scan signal SC remains high during the sensing cycle, the second transistor T2 can remain on, and the third transistor T3 can be turned off. When the second transistor T2 is on, the gate electrode of the first transistor T1 and the storage capacitor C... ST The first electrode can maintain the reference voltage V REF Furthermore, when the third transistor T3 is turned off, the second electrode and anode of the first transistor T1 can be disconnected from the initialization voltage line VL3.

[0187] Therefore, current flows from the first electrode of the first transistor T1 to the second electrode, and the first transistor T1 can be turned off when the voltage at the second electrode becomes the "reference voltage - threshold voltage". Here, the threshold voltage is the threshold voltage of the first transistor T1. At this time, the voltage difference between the gate electrode and the second electrode of the first transistor T1 can be stored in the storage capacitor C. STIn addition, the threshold voltage of the first transistor T1 can be sensed. By generating a compensated data signal that reflects the characteristic information sensed during the sensing period, the characteristic deviation of the first transistor T1, which may vary for each pixel PX, can be compensated.

[0188] Next, when a high-level first scan signal SC and a low-level second scan signal SS are supplied in the data input section, the second transistor T2 can be turned on, and the third transistor T3 can be turned off. The data voltage V from the data line DL... DATA The gate electrode of the first transistor T1 and the storage capacitor C can be supplied through the conducting second transistor T2. ST The first electrode. Based on the threshold voltage of the sensing first transistor T1, the data voltage V... DATA It can have a compensation value, and in this way, the characteristic deviation of the first transistor T1 can be corrected. When a data voltage V is applied... DATA When the first transistor T1 is turned off, the second electrode and anode of the first transistor T1 can maintain substantially the same potential in the sensing section.

[0189] Next, in the light-emitting section, the data voltage V supplied to the gate electrode of the first transistor T1... DATA The first transistor T1 that is turned on can be adjusted according to the data voltage V. DATA This generates a driving current, which the light-emitting diode (LED) can use to emit light.

[0190] That is, it can be based on the data voltage V applied to pixel PX. DATA The brightness of an LED is adjusted by regulating the driving current applied to the LED.

[0191] While some aspects of embodiments of the present disclosure have been described in detail above, the scope of embodiments of the present disclosure is not limited thereto, and various modifications and improvements are possible by those skilled in the art using the disclosed embodiments of the present disclosure as defined in the appended claims and their equivalents.

Claims

1. A display device, characterized in that, include: The display unit includes a plurality of light-emitting diodes; A color conversion unit, the color conversion unit comprising a dam and a color conversion layer; And an adhesive unit gap retaining layer, the adhesive unit gap retaining layer being between the display unit and the color conversion unit, wherein the adhesive unit gap retaining layer includes an adhesive unit gap retaining portion, and the adhesive unit gap retaining portion includes a bead spacer and an adhesive organic material component.

2. The display device according to claim 1, characterized in that, The color conversion unit further includes a transmissive layer, and the adhesive unit gap retaining portion is on at least one of the color conversion layer and the transmissive layer, a portion of the adhesive unit gap retaining portion including the adhesive unit gap retaining layer overlapping with the dam.

3. The display device according to claim 2, characterized in that, The color conversion unit further includes a trap, and the adhesive unit gap retaining portion is located within the trap.

4. The display device according to claim 2, characterized in that, An air gap is formed in the portion of the adhesive unit gap retaining layer that is not filled with the adhesive unit gap retaining portion.

5. The display device according to claim 1, characterized in that, The height of the dam is higher than the height of the color conversion layer.

6. The display device according to claim 1, characterized in that, The color conversion unit further includes a transmission layer, which comprises quantum dots and a scatterer, and the transmission layer includes the scatterer.

7. A display device, characterized in that, include: Substrate; A plurality of light-emitting diodes (LEDs) on the substrate; an encapsulation layer on the plurality of LEDs; A color conversion unit, the color conversion unit including a dam and a color conversion layer on the encapsulation layer; The adhesive unit gap retaining part includes a bead spacer and an adhesive organic material part on the color conversion unit; An adhesive unit gap retaining layer, wherein the adhesive unit gap retaining layer includes the adhesive unit gap retaining portion; And a color filter, which is located on the adhesive unit gap retaining layer.

8. The display device according to claim 7, characterized in that, The color conversion unit further includes a transmissive layer, the adhesive unit gap retaining portion is on at least one of the color conversion layer and the transmissive layer, and a portion of the adhesive unit gap retaining portion includes the adhesive unit gap retaining layer overlapping the dam.

9. The display device according to claim 8, characterized in that, An air gap is formed in the portion of the adhesive unit gap retaining layer that is not filled with the adhesive unit gap retaining portion.

10. The display device according to claim 9, characterized in that, The height of the dam is higher than the height of the color conversion layer, and the gap retaining part of the adhesive unit is in contact with the color conversion layer and the dam.

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