High-performance Raman optical filter group based on 532nm

Abstract

The utility model discloses a 532nm-based high-performance Raman optical filter group, which comprises a 532nm-4nm Raman narrow-band-pass optical filter, a 532nm Raman dichroic mirror and a 532nm Raman long-wave-pass optical filter, and each of the 532nm Raman long-wave-pass optical filter, the 532nm Raman dichroic mirror and the 532nm-4nm Raman narrow-band-pass optical filter structurally comprises a fused quartz substrate arranged at the bottommost layer; the device comprises a fused quartz substrate, a plurality of high-refractive-index coating layers and a plurality of low-refractive-index coating layers, the material thickness of each high-refractive-index coating layer and the material thickness of each low-refractive-index coating layer are irregular, and a high-refractive-index material and a low-refractive-index material are alternately sputtered to the surface of the fused quartz substrate to achieve specific spectral performance; the 532nm-based high-performance Raman optical filter group can still keep stable optical performance in high-temperature and high-humidity environments, and is suitable for various complex application scenes.

Description

Technical Field

[0001] This utility model relates to filter film structure, specifically to a high-performance Raman filter group based on 532nm. Background Technology

[0002] Raman spectroscopy is a non-destructive analytical technique based on the Raman scattering effect, widely used in chemistry, biology, materials science, environmental monitoring, and other fields. By detecting frequency changes in the scattered light from a sample, it can provide detailed information about molecular structure, chemical composition, and physical state. However, Raman signals are typically very weak and easily masked by Rayleigh scattering from the excitation source and other background noise. Therefore, the design of efficient filter arrays is one of the key technologies for Raman spectroscopy systems.

[0003] In Raman spectroscopy systems, the primary function of the filter array is to filter out Rayleigh scattered light from the excitation source (which is typically at or very close to the excitation wavelength) while allowing Raman scattered light to pass through, thereby improving the signal-to-noise ratio and detection sensitivity. 532 nm lasers are commonly used excitation sources in Raman spectroscopy due to their high brightness, stability, and efficient interaction with many samples. However, the Rayleigh scattered light intensity of a 532 nm laser is much higher than the Raman signal, which places extremely high demands on the performance of the filter array.

[0004] Currently, most Raman filter assemblies on the market use multilayer dielectric films or bandpass filter technology. Traditional multilayer film filters have difficulty balancing the cutoff depth and passband width around 532nm, which may lead to Raman signal loss or insufficient background noise suppression. Moreover, existing filter assemblies have complex structures and large volumes, making it difficult to meet the needs of miniaturized and integrated Raman spectroscopy equipment.

[0005] Therefore, there is an urgent need in the field for a high-performance Raman filter array for 532nm, which has a high cutoff depth, narrow passband range, compact structure and excellent stability. Utility Model Content

[0006] This invention provides a high-performance Raman filter array based on 532nm. By optimizing the structural design and material selection of the filter, it addresses the shortcomings of existing technologies and provides a more efficient and reliable filtering solution for Raman spectroscopy detection technology.

[0007] To achieve the above objectives, this utility model provides a high-performance Raman filter assembly based on 532nm, characterized in that it sequentially includes: a 532nm-4nm Raman narrowband pass filter, a 532nm Raman dichroic mirror, and a 532nm Raman long-wavelength pass filter in the optical path.

[0008] The light emitted by the light source passes through a 532nm-4nm Raman narrow bandpass filter, and then stray light is filtered out by a 532nm Raman dichroic mirror and the excitation light is reflected to the sample to excite a light signal. The light signal is then transmitted through the 532nm Raman dichroic mirror, and after noise is filtered out by a 532nm Raman long-wavelength pass filter, it is incident on the receiver used for detection.

[0009] The 532nm Raman long-pass filter, the 532nm Raman dichroic mirror, and the 532nm-4nm Raman narrow-pass filter all include: a fused silica substrate disposed at the bottom layer; and

[0010] The film structure includes multiple high-refractive-index coating layers and multiple low-refractive-index coating layers. Each high-refractive-index coating layer and each low-refractive-index coating layer are sequentially and alternately sputtered onto the surface of the fused silica substrate, and the material thickness of each high-refractive-index coating layer and each low-refractive-index coating layer is irregular.

[0011] The 532nm Raman long-wavelength pass filter has a film structure of 198 layers, the 532nm Raman dichroic filter has a film structure of 146 layers, and the 532nm-4nm Raman narrow-band pass filter has a film structure of 166 layers.

[0012] In one embodiment of the present invention, the film structure of the 532nm Raman long-pass filter, from the fused silica substrate upwards, is as follows: 10.00nm H, 107.44nm L, 21.90nm H, 99.38nm L, 39.21nm H, 74.78nm L, 58.32nm H, 59.16nm L, 66.10nm H, 63.13nm L, 56.84nm H, 81.11nm L, 46.09nm H, 92.51nm L, 46.16nm H, 83.09nm L, 55.86nm H, 70.53nm L, 60.23nm H, 73.84nm L, 53. 24nm H, 85.84nm L, 47.83nm H, 87.16nm L, 52.05nm H, 76.29nm L, 59.09nm H, 71.96nm L, 56.75nm H, 81.38nm L, 49.36nm H, 88.68nm L, 49.68nm H, 80.90nm L, 57.00nm H, 72.23nm L, 59.05nm H, 76.75nm L, 51.94nm H, 88.04nm L, 47.84nm H, 86.27nm L, 53.68nm H, 74.56nm L, 59.73nm H, 73. 30nm L, 55.17nm H, 84.23nm L, 48.33nm H, 89.13nm L, 50.59nm H, 78.75nm L, 58.58nm H, 71.71nm L, 58.04nm H, 79.89nm L, 50.05nm H, 89.35nm L, 48.80nm H, 82.82nm L, 56.35nm H, 72.14nm L, 60.08nm H, 75.21nm L, 52.81nm H, 87.79nm L, 47.47nm H, 87.54nm L, 53.05nm H, 74.98nm L, 60. 16nm H, 72.24nm L, 56.10nm H, 83.59nm L, 48.17nm H, 90.38nm L, 49.76nm H, 79.68nm L, 58.53nm H, 71.15nm L, 58.71nm H, 79.26nm L, 49.91nm H, 90.62nm L, 47.60nm H, 84.78nm L, 55.49nm H, 72.36nm L, 60.50nm H, 74.57nm L, 52.96nm H, 88.46nm L, 46.69nm H, 89.10nm L, 52.36nm H, 75.24nm L, 60.56nm H, 71.39nm L, 56.47nm H, 83.97nm L, 47.23nm H, 92.34nm L, 48.87nm H, 79.79nm L, 59.25nm H, 69.45nm L, 59.90nm H, 78.46nm L, 49.59nm H, 92.32nm L, 46.48nm H, 85.63nm L, 56.06nm H, 70.03nm L, 62.69nm H, 72.47nm L, 53.11nm H, 90.15nm L, 44.88nm H, 91.82nm L, 51 0.57nm H, 73.92nm L, 62.94nm H, 67.59nm L, 58.39nm H, 83.51nm L, 45.72nm H, 96.57nm L, 46.71nm H, 81.01nm L, 60.12nm H, 66.46nm L, 62.46nm H, 76.45nm L, 48.83nm H, 96.67nm L, 43.08nm H, 89.78nm L, 55.28nm H, 67.35nm L, 66.39nm H, 67.83nm L, 54.51nm H, 91.51nm L, 41.74nm H, 9 8.89nm L, 48.29nm H, 74.66nm L, 65.51nm H, 61.78nm L, 62.46nm H, 81.05nm L, 43.77nm H, 104.36nm L, 41.85nm H, 85.5nm L, 60.05nm H, 60.87nm L, 69.32nm H, 68.38nm L, 50.43nm H, 100.93nm L, 37.06nm H, 101.11nm L, 50.98nm H, 65.00nm L, 74.06nm H, 55.55nm L, 61.94nm H, 86.60nm L, 37.23nm H, 117.65nm L, 37.74nm H, 82.83nm L, 66.21nm H, 48.54nm L, 78.52nm H, 63.78nm L, 46.55nm H, 112.95nm L, 29.61nm H, 108.52nm L, 49.32nm H, 55.05nm L, 89.19nm H, 38.01nm L, 65.26nm H, 79.03nm L, 21.09nm H, 216.75nm L, 15.27nm H, 87.17nm L, 52.47nm H, 32.99nm L, 120.H at 00nm, L at 24.66nm, H at 54.00nm, and L at 145.55nm; H represents a high-refractive-index coating layer, and L represents a low-refractive-index coating layer.

[0013] In one embodiment of the present invention, the film structure of the 532nm Raman dichroic filter, from the fused silica substrate upwards, is as follows: H at 22.96nm, L at 61.46nm, H at 191.29nm, L at 279.41nm, H at 173.54nm, L at 15.74nm, H at 12.54nm, L at 271.74nm, H at 9.00nm, L at 14.98nm, H at 174.99nm, L at 285.88nm, H at 9.28nm, L at 9.00nm, H at 178.9nm, L at 292.06nm, H at 187.4nm, L at 295.96nm, H at 191.54nm, and 125.18nm. L with a wavelength of m, H with a wavelength of 14.64nm, L with a wavelength of 116.03nm, H with a wavelength of 204.95nm, L with a wavelength of 99.41nm, H with a wavelength of 26.67nm, L with a wavelength of 101.67nm, H with a wavelength of 204.46nm, L with a wavelength of 112.61nm, H with a wavelength of 21.99nm, L with a wavelength of 101.61nm, H with a wavelength of 213.84nm, L with a wavelength of 90.27nm, H with a wavelength of 28.40nm, L with a wavelength of 104.48nm, H with a wavelength of 195.15nm, L with a wavelength of 297.47nm, H with a wavelength of 185.69nm, L with a wavelength of 268.27nm, H with a wavelength of 9.00nm, L with a wavelength of 26.65nm, H with a wavelength of 186.84nm, L with a wavelength of 285.29nm, H with a wavelength of 174.74nm, 24 0.18nm L, 16.17nm H, 281.65nm L, 159.44nm H, 208.76nm L, 153.27nm H, 501.07nm L, 9.00nm H, 23.74nm L, 161.07nm H, 25.11nm L, 13.35nm H, 261.22nm L, 11.79nm H, 23.49nm L, 159.88nm H, 25.76nm L, 13.25nm H, 264.94nm L, 12.09nm H, 25.67nm L, 157.31nm H, 206.16nm L, 10.24nm H, 1 3.19nm L, 133.68nm H, 497.25nm L, 130.17nm H, 13.78nm L, 10.14nm H, 199.8nm L, 177.04nm H, 9.00nm L, 138.57nm H, 242.92nm L, 9.00nm H, 9.16nm L, 252.87nm H, 25.69nm L, 24.91nm H, 205.39nm L, 162.67nm H, 284.94nm L, 16.29nm H, 26.36nm L, 173.39nm H, 272.87nm L, 9.00nm H, 15.37nm L, 187.41nm H, 292.62nm L, 84.74nm H, 34.19nm L, 72.35nm H, 82.86nm L, 55.37nm H, 89.41nm L, 54.16nm H, 88.61nm L, 55.78nm H, 90.41nm L, 54.94nm H, 88.45nm L, 53.78nm H, 89.1nm L, 57.07nm H, 95.72nm L, 37.60nm H, 99.23nm L, 193.07nm H, 294.05nm L, 165.1nm H, 220.09nm L, 153.23nm H, 264.76nm L, 18.7nm H, 33.61nm L, 17 7.05nm H, 247.86nm L, 17.36nm H, 16.15nm L, 462.97nm H, 20.42nm L, 11.27nm H, 222.33nm L, 140.08nm H, 249.15nm L, 176.01nm H, 255.12nm L, 141.13nm H, 244.41nm L The wavelengths are: 178.5nm (H), 34.89nm (L), 19.08nm (H), 255.83nm (L), 151.83nm (H), 220.57nm (L), 159.53nm (H), 315.01nm (L), 41.18nm (H), 47.8nm (L), 218.83nm (H), and 141.1nm (L). H represents a high-refractive-index coating, and L represents a low-refractive-index coating.

[0014] In one embodiment of the present invention, the film structure of the 532nm-4nm Raman narrowband pass filter, from the fused silica substrate upwards, is as follows: H at 61.14nm, L at 90.35nm, H at 244.56nm, L at 90.35nm, H at 61.14nm, L at 90.35nm, H at 61.14nm, L at 90.35nm, H at 61.14nm, L at 90.35nm, H at 61.14nm, L at 90.35nm, H at 122.28nm, L at 90.35nm, H at 61.14nm, L at 90.35nm, H at 61.14nm, L at 90.35nm, H at 61.14nm, L at 90.35nm, H at 61.14nm, L at 90.35nm, H at 61.14nm, L at 90.35nm. L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 122.28nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 244.56nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 244.56nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.3 5nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 366.84nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 244.56nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 244.56nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90. 35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 122.28nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 122.28nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 244.56nm H, 90.35nm L, 41.13nm H, 61.52nm L, where H represents a high refractive index coating layer and L represents a low refractive index coating layer.

[0015] In one embodiment of the present invention, the 532nm Raman long-pass filter has a center wavelength of 523nm, a steepness of 5nm, a cutoff depth of OD6@532nm, a wavelength range of 400-1200nm, and an average transmittance of >90% for light with a wavelength range of 535-1200nm.

[0016] In one embodiment of the present invention, the 532nm Raman dichroic filter has a center wavelength of 523nm, a steepness of 12nm, and a cutoff depth of OD6@532nm. The wavelength range of the 532nm Raman long-pass filter is 400-800nm, and the average transmittance of the 532nm Raman long-pass filter for light with a wavelength range of 542-800nm ​​is >90%.

[0017] In one embodiment of the present invention, the 532nm-4nm Raman narrowband pass filter has a center wavelength of 523nm, a steepness of 12nm, a cutoff depth of OD4-OD6@400-700nm, a wavelength range of 400-800nm, and a peak transmittance of 93%.

[0018] In one embodiment of the present invention, the high refractive index coatings of the 532nm Raman long-wavelength pass filter, the 532nm Raman dichroic filter, and the 532nm-4nm Raman narrow-band pass filter are all made of tantalum pentoxide, and the low refractive index coatings are all made of silicon dioxide.

[0019] This invention provides a high-performance Raman filter array based on 532nm. By employing a multi-layer structure and unique optical materials, the cutoff depth and passband width of the filter array are optimized, resulting in higher Rayleigh scattering suppression capability and a wider Raman signal transmission range near 532nm. Simultaneously, the filter array is small in size and lightweight, facilitating integration into miniaturized Raman spectroscopy equipment. Attached Figure Description

[0020] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0021] Figure 1 This is a diagram showing the arrangement of a high-performance Raman filter group based on 532nm according to an embodiment of the present invention.

[0022] Figure 2 This is a spectrum of a 532nm Raman long-pass filter according to an embodiment of the present invention;

[0023] Figure 3 This is a 532nm Raman dichroic mirror spectrum according to an embodiment of the present invention;

[0024] Figure 4 This is a spectral diagram of a 532nm-4nm Raman narrowband pass filter according to an embodiment of the present invention;

[0025] Figure 5 This is a test spectrum of a 532nm Raman long-pass filter according to an embodiment of the present invention;

[0026] Figure 6 This is a test spectrum of a 532nm Raman dichroic filter according to an embodiment of the present invention;

[0027] Figure 7 This is a transmittance test spectrum of a 532nm Raman narrowband filter according to an embodiment of the present invention.

[0028] Figure 8 This is a cutoff background test spectrum of a 532nm Raman narrowband pass filter according to an embodiment of the present invention.

[0029] Explanation of reference numerals in the attached figures: Figures 2-8 The horizontal axis represents wavelength (nm), and the vertical axis represents transmittance (%). Detailed Implementation

[0030] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0031] Figure 1 This is a diagram showing the arrangement of a high-performance Raman filter group based on 532nm according to an embodiment of the present invention. Figure 2 The image shows the spectrum of a 532nm Raman long-pass filter according to an embodiment of this utility model. Figure 3 The 532nm Raman dichroic mirror spectrum of an embodiment of this utility model and Figure 4 This is a spectral diagram of a 532nm-4nm Raman narrow bandpass filter according to an embodiment of the present invention, such as... Figure 1 , Figure 2 , Figure 3 and Figure 4As shown, this utility model provides a high-performance Raman filter assembly based on 532nm, which includes, in sequence along the optical path: a 532nm-4nm Raman narrow bandpass filter, disposed at the light source; a 532nm Raman dichroic mirror, tilted at a 45-degree angle to the incident light direction between the 532nm-4nm Raman narrow bandpass filter and the sample; and a 532nm Raman long-wavelength pass filter, disposed perpendicular to the line connecting the 532nm-4nm Raman narrow bandpass filter and the sample, and located in the optical path of the light emitted by the 532nm Raman dichroic mirror.

[0032] The light emitted by the light source passes through a 532nm-4nm Raman narrow-bandpass filter, and then stray light is filtered out by a 532nm Raman dichroic mirror, which reflects the excitation light to the sample to generate a light signal. The light signal is then transmitted through the 532nm Raman dichroic mirror, and after noise is filtered out by a 532nm Raman long-wavepass filter, it is incident on the receiver used for detection.

[0033] The 532nm Raman long-pass filter, the 532nm Raman dichroic mirror, and the 532nm-4nm Raman narrow-pass filter all include: a fused silica substrate disposed at the bottom layer; and...

[0034] A film system structure consisting of multiple high-refractive-index coating layers and multiple low-refractive-index coating layers, wherein the material thickness of each high-refractive-index coating layer and each low-refractive-index coating layer is irregular. Each high-refractive-index coating layer and each low-refractive-index coating layer is sequentially and alternately sputtered onto the surface of a fused silica substrate using plasma-assisted magnetron sputtering technology to achieve specific spectral properties.

[0035] In this embodiment, the initial structure of the 532nm Raman long-pass filter is (2H1.7L)^100, which, after irregular thickness adjustment, comprises 198 layers. The specific film structure of the 532nm Raman long-pass filter is shown in the table below. In the marking codes, H represents a high-refractive-index coating layer, and L represents a low-refractive-index coating layer. The high-refractive-index material is TA241115 tantalum pentoxide, and the low-refractive-index material is SI250113 silicon dioxide.

[0036]

[0037]

[0038]

[0039]

[0040]

[0041] In this embodiment, the initial structure of the 532nm Raman dichroic filter is 0.2H0.3L(0.5H2L4H2L0.5H)^40, which, after irregular thickness adjustment, comprises 146 layers. The specific film structure of the 532nm Raman dichroic filter is shown in the table below. In the marking codes, H represents a high refractive index coating layer, and L represents a low refractive index coating layer. The high refractive index material is TA205-T tantalum pentoxide, and the low refractive index material is SiO2-HL silicon dioxide.

[0042]

[0043]

[0044]

[0045]

[0046] In this embodiment, the initial structure of the 532nm-4nm Raman narrowband pass filter is H L4HLHL / HLHLHL2HLHLHLHL / HLHLHLHL2HLHLHLHLHL / HLHLHLHL4HLHLHLHLHL / HLHLHLHL4HLHLHLHLHL / HLHLHLHL6HLHLHLHLHL / HLHLHLHL4HLHLHLHLHL / HLHLHLHLHL4HLHLHLHLHL / HLHLHLHLHL2HLHLHLHLHL / HLHLHLHL2HLHLHLHLHL / HL4HLHL, which, after irregular thickness adjustment, comprises 166 layers. The specific film structure of the 532nm-4nm Raman narrowband pass filter is shown in the table below. In the marking codes, H represents a high refractive index coating layer, and L represents a low refractive index coating layer. The high refractive index material is TA241115 tantalum pentoxide, and the low refractive index material is SI250113 silicon dioxide.

[0047]

[0048]

[0049]

[0050]

[0051]

[0052] Figure 5 This is a test spectrum of a 532nm Raman long-pass filter according to an embodiment of the present invention, such as... Figure 5As shown, the 532nm Raman long-pass filter has a center wavelength of 523nm, a steepness of 5nm, a cutoff depth of OD6@532nm, a wavelength range of 400-1200nm, and an average transmittance of >90% for light with a wavelength range of 535-1200nm.

[0053] Figure 6 This is a test spectrum of a 532nm Raman dichroic filter according to an embodiment of the present invention, as shown below. Figure 6 As shown, the 532nm Raman dichroic filter has a center wavelength of 523nm, a steepness of 12nm, and a cutoff depth of OD6@532nm. The wavelength range of the 532nm Raman long-pass filter is 400-800nm. The average transmittance of the 532nm Raman long-pass filter for light with a wavelength range of 542-800nm ​​is >90%.

[0054] Figure 7 This is a transmittance test spectrum of a 532nm Raman narrowband pass filter according to an embodiment of the present invention. Figure 8 This is a cutoff background test spectrum of a 532nm Raman narrowband pass filter according to an embodiment of the present invention, as shown below. Figure 7 , Figure 8 As shown, the 532nm-4nm Raman narrow bandpass filter has a center wavelength of 523nm, a steepness of 12nm, a cutoff depth of OD4-OD6@400-700nm, a wavelength range of 400-800nm, and a peak transmittance of 93%.

[0055] Those skilled in the art will understand that the accompanying drawings are merely schematic diagrams of one embodiment, and the modules or processes shown in the drawings are not necessarily essential for implementing this utility model.

[0056] Those skilled in the art will understand that the modules in the apparatus of the embodiments can be distributed in the apparatus of the embodiments as described in the embodiments, or they can be located in one or more devices different from this embodiment with corresponding changes. The modules of the above embodiments can be combined into one module, or they can be further divided into multiple sub-modules.

[0057] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this utility model, and not to limit it; although the utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this utility model.

Claims

1. A high-performance Raman filter array based on 532nm, characterized in that, The optical path includes, in sequence: a 532nm-4nm Raman narrowband pass filter, a 532nm Raman dichroic mirror, and a 532nm Raman longband pass filter. In this process, the light emitted by the light source passes through a 532nm-4nm Raman narrow bandpass filter, then is filtered by a 532nm Raman dichroic mirror to remove stray light and reflect the excitation light to the sample to generate a light signal. The light signal is then transmitted through the 532nm Raman dichroic mirror, filtered for noise by a 532nm Raman long bandpass filter, and then incident on the receiver used for detection. The structures of the 532nm Raman long-pass filter, the 532nm Raman dichroic mirror, and the 532nm-4nm Raman narrow-pass filter all include: A fused silica substrate, located at the bottom layer; and The film structure includes multiple high-refractive-index coating layers and multiple low-refractive-index coating layers. Each high-refractive-index coating layer and each low-refractive-index coating layer are sequentially and alternately sputtered onto the surface of the fused silica substrate, and the material thickness of each high-refractive-index coating layer and each low-refractive-index coating layer is irregular. The 532nm Raman long-wavelength pass filter has a film structure of 198 layers, the 532nm Raman dichroic filter has a film structure of 146 layers, and the 532nm-4nm Raman narrow-band pass filter has a film structure of 166 layers.

2. The high-performance Raman filter assembly based on 532nm according to claim 1, characterized in that, The film structure of the 532nm Raman long-pass filter, from the fused silica substrate upwards, is as follows: 10.00nm H, 107.44nm L, 21.90nm H, 99.38nm L, 39.21nm H, 74.78nm L, 58.32nm H, 59.16nm L, 66.10nm H, 63.13nm L, 56.84nm H, 81.11nm L, 46.09nm H, 92.51nm L, 46.16nm H, 83.09nm L, 55.86nm H, 70.53nm L, 60.23nm H, 73.84nm L, 53.24nm H, 85.84nm L, 47.83nm H, 87.16nm L, 52.05nm H, 76.29nm L, 59.09nm H, 71.96nm L, 56.75nm H, 81.38nm L, 49.36nm H, 88.68nm L, 49.68nm H, 80.90nm L, 57.00nm H, 72.23nm L, 59.05nm H, 76.75nm L, 51.94nm H, 88.04nm L, 47.84nm H, 86.27nm L, 53.68nm H, 74.56nm L, 59.73nm H, 73.30nm L, 55.17nm H, 84.23nm L, 48.33nm H, 89.13nm The following are the wavelengths of various nanometers: L (m), H (50.59nm), L (78.75nm), H (58.58nm), L (71.71nm), H (58.04nm), L (79.89nm), H (50.05nm), L (89.35nm), H (48.80nm), L (82.82nm), H (56.35nm), L (72.14nm), H (60.08nm), L (75.21nm), H (52.81nm), L (87.79nm), H (47.47nm), L (87.54nm), H (53.05nm), L (74.98nm), H (60.16nm), L (72.24nm), H (56.10nm), L (83.59nm), and 48.1 nm. 7nm H, 90.38nm L, 49.76nm H, 79.68nm L, 58.53nm H, 71.15nm L, 58.71nm H, 79.26nm L, 49.91nm H, 90.62nm L, 47.60nm H, 84.78nm L, 55.49nm H, 72.36nm L, 60.50nm H, 74.57nm L, 52.96nm H, 88.46nm L, 46.69nm H, 89.10nm L, 52.36nm H, 75.24nm L, 60.56nm H, 71.39nm L, 56.47nm H, 83.97nm L, 47.23nm H, 92.34nm L, 48.87nm H, 79.79nm L, 59.25nm H, 69.45nm L, 59.90nm H, 78.46nm L, 49.59nm H, 92.32nm L, 46.48nm H, 85.63nm L, 56.06nm H, 70.03nm L, 62.69nm H, 72.47nm L, 53.11nm H, 90.15nm L, 44.88nm H, 91.82nm L, 51.57nm H, 73.92nm L, 62.94nm H, 67.59nm L 58.39nm H, 83.51nm L, 45.72nm H, 96.57nm L, 46.71nm H, 81.01nm L, 60.12nm H, 66.46nm L, 62.46nm H, 76.45nm L, 48.83nm H, 96.67nm L, 43.08nm H, 89.78nm L, 55.28nm H, 67.35nm L, 66.39nm H, 67.83nm L, 54.51nm H, 91.51nm L, 41.74nm H, 98.89nm L, 48.29nm H, 74.66nm L, 65.51nm H, 61.78nm L, 62.46nm H, 81.05nm L, 43.77nm H, 104.36nm L, 41.85nm H, 85.5nm L, 60.05nm H, 60.87nm L, 69.32nm H, 68.38nm L, 50.43nm H, 100.93nm L, 37.06nm H, 101.11nm L, 50.98nm H, 65.00nm L, 74.06nm H, 55.55nm L, 61.94nm H, 86.60nm L, 37.23nm H, 117.65nm L, 37.74nm H, 8 2.83nm L, 66.21nm H, 48.54nm L, 78.52nm H, 63.78nm L, 46.55nm H, 112.95nm L, 29.61nm H, 108.52nm L, 49.32nm H, 55.05nm L, 89.19nm H, 38.01nm L, 65.26nm H, 79.03nm L, 21.09nm H, 216.75nm L, 15.27nm H, 87.17nm L, 52.47nm H, 32.99nm L, 120.00nm H, 24.66nm L, 54.00nm H, 145.In the 55nm range, L and H represent high-refractive-index coatings, and L represents low-refractive-index coatings.

3. The high-performance Raman filter assembly based on 532nm according to claim 1, characterized in that, The film structure of the 532nm Raman dichroic filter, from the fused silica substrate upwards, is as follows: H at 22.96nm, L at 61.46nm, H at 191.29nm, L at 279.41nm, H at 173.54nm, L at 15.74nm, H at 12.54nm, L at 271.74nm, H at 9.00nm, L at 14.98nm, H at 174.99nm, L at 285.88nm, H at 9.28nm, L at 9.00nm, H at 178.9nm, L at 292.06nm, H at 187.4nm, L at 295.96nm, H at 191.54nm, L at 125.18nm, and H at 14.64nm. 116.03nm L, 204.95nm H, 99.41nm L, 26.67nm H, 101.67nm L, 204.46nm H, 112.61nm L, 21.99nm H, 101.61nm L, 213.84nm H, 90.27nm L, 28.40nm H, 104.48nm L, 195.15nm H, 297.47nm L, 185.69nm H, 268.27nm L, 9.00nm H, 26.65nm L, 186.84nm H, 285.29nm L, 174.74nm H, 24.18nm L, 16.1 7nm H, 281.65nm L, 159.44nm H, 208.76nm L, 153.27nm H, 501.07nm L, 9.00nm H, 23.74nm L, 161.07nm H, 25.11nm L, 13.35nm H, 261.22nm L, 11.79nm H, 23.49nm L, 159.88nm H, 25.76nm L, 13.25nm H, 264.94nm L, 12.09nm H, 25.67nm L, 157.31nm H, 206.16nm L, 10.24nm H, 13.19nm L, 133 0.68nm H, 497.25nm L, 130.17nm H, 13.78nm L, 10.14nm H, 199.8nm L, 177.04nm H, 9.00nm L, 138.57nm H, 242.92nm L, 9.00nm H, 9.16nm L, 252.87nm H, 25.69nm L, 24.91nm H, 205.39nm L, 162.67nm H, 284.94nm L, 16.29nm H, 26.36nm L, 173.39nm H, 272.87nm L, 9.00nm H, 15.37nm L, 187.41nm H, 292.62nm L, 84.74nm H, 34.19nm L, 72.35nm H, 82.86nm L, 55.37nm H, 89.41nm L, 54.16nm H, 88.61nm L, 55.78nm H, 90.41nm L, 54.94nm H, 88.45nm L, 53.78nm H at m, L at 89.1nm, H at 57.07nm, L at 95.72nm, H at 37.60nm, L at 99.23nm, H at 193.07nm, L at 294.05nm, H at 165.1nm, L at 220.09nm, H at 153.23nm, L at 264.76nm, H at 18.7nm, L at 33.61nm, 177.05nm H, 247.86nm L, 17.36nm H, 16.15nm L, 462.97nm H, 20.42nm L, 11.27nm H, 222.33nm L, 140.08nm H, 249.15nm L, 176.01nm H, 255.12nm L, 141.13nm H, 244.41nm L, 17 The wavelengths are: 8.5nm (H), 34.89nm (L), 19.08nm (H), 255.83nm (L), 151.83nm (H), 220.57nm (L), 159.53nm (H), 315.01nm (L), 41.18nm (H), 47.8nm (L), 218.83nm (H), and 141.1nm (L). H represents a high-refractive-index coating, and L represents a low-refractive-index coating.

4. The high-performance Raman filter assembly based on 532nm according to claim 1, characterized in that, The film structure of the 532nm-4nm Raman narrowband filter, from the fused silica substrate upwards, is as follows: H at 61.14nm, L at 90.35nm, H at 244.56nm, L at 90.35nm, H at 61.14nm, L at 90.35nm, H at 61.14nm, L at 90.35nm, H at 61.14nm, L at 90.35nm, H at 61.14nm, L at 90.35nm, H at 122.28nm, L at 90.35nm, H at 61.14nm, L at 90.35nm, H at 61.14nm, L at 90.35nm, H at 61.14nm, L at 90.35nm, H at 61.14nm, L at 90.35nm, H at 61.14nm. 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 122.28nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 244.56nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 244.56nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14 nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 366.84nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 244.56nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L at 61.14nm, H at 90.35nm, L at 61.14nm, H at 90.35nm, L at 244.56nm, H at 90.35nm, L at 61.14nm, H at 90.35nm, L at 61.14nm, H at 90.35nm, L at 61.14nm, H at 90.35nm, L at 61.14nm, H at 90.35nm, L at 61.14nm, H at 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 122.28nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, 61.14nm H, 90.35nm L, The following are the wavelengths of coatings: 61.14nm (H), 90.35nm (L), 122.28nm (H), 90.35nm (L), 61.14nm (H), 90.35nm (L), 61.14nm (H), 90.35nm (L), 61.14nm (H), 90.35nm (L), 61.14nm (H), 90.35nm (L), 244.56nm (H), 90.35nm (L), 41.13nm (H), and 61.52nm (L). Here, H represents a high-refractive-index coating, and L represents a low-refractive-index coating.

5. The high-performance Raman filter assembly based on 532nm according to claim 2, characterized in that, The 532nm Raman long-pass filter has a center wavelength of 523nm, a steepness of 5nm, and a cutoff depth of OD6@532nm. The wavelength range of the 532nm Raman long-pass filter is 400-1200nm, and the average transmittance of the 532nm Raman long-pass filter for light with a wavelength range of 535-1200nm is >90%.

6. The high-performance Raman filter assembly based on 532nm according to claim 3, characterized in that, The 532nm Raman dichroic filter has a center wavelength of 523nm, a steepness of 12nm, and a cutoff depth of OD6@532nm. The wavelength range of the 532nm Raman long-pass filter is 400-800nm. The average transmittance of the 532nm Raman long-pass filter for light with a wavelength range of 542-800nm ​​is >90%.

7. The high-performance Raman filter assembly based on 532nm according to claim 4, characterized in that, The 532nm-4nm Raman narrowband pass filter has a center wavelength of 523nm, a steepness of 12nm, a cutoff depth of OD4-OD6@400-700nm, a wavelength range of 400-800nm, and a peak transmittance of 93%.

8. The high-performance Raman filter assembly based on 532nm according to any one of claims 2 to 4, characterized in that, The high-refractive-index coatings of the 532nm Raman long-wavelength pass filter, the 532nm Raman dichroic filter, and the 532nm-4nm Raman narrow-band pass filter are all made of tantalum pentoxide, and the low-refractive-index coatings are all made of silicon dioxide.

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