Semiconductor device
By using an alternating arrangement of anisotropic thermally conductive materials in semiconductor devices, the problem of insufficient heat dissipation in integrated circuits is solved, and efficient thermal management is achieved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
- Filing Date
- 2025-01-17
- Publication Date
- 2026-05-12
AI Technical Summary
As the integration level of integrated circuits increases, insufficient heat dissipation can lead to semiconductor component failures or permanent damage, and existing technologies are unable to effectively solve the heat dissipation problem.
Anisotropic thermally conductive materials are used to form thermally conductive and thermally insulating parts through the alternating arrangement of polymer materials and thermally conductive materials, thus constituting a heat dissipation component for use in semiconductor devices.
实现了半导体装置的高效散热，提高了热导率，降低了热传输的限制，增强了散热效果。
Smart Images
Figure CN224234183U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to a heat dissipation component and a semiconductor device with anisotropic thermal conductivity. Background Technology
[0002] With technological advancements, the integration density of integrated circuits is continuously increasing, leading to denser internal circuitry. However, this increased integration density also presents challenges in heat dissipation. Insufficient heat dissipation can cause semiconductor component failures or even permanent damage. To address these issues, the use of heat sinks has become a common practice for significantly improving the heat dissipation efficiency of integrated circuits. Utility Model Content
[0003] According to some embodiments, the heat dissipation assembly includes anisotropic thermally conductive material. The anisotropic thermally conductive material includes a polymeric material and a thermally conductive material. A first portion of the polymeric material is bonded to the thermally conductive material to form a thermally conductive portion. A second portion of the polymeric material is not bonded to the thermally conductive material and forms a thermally insulating portion. The thermally conductive and thermally insulating portions are arranged alternately.
[0004] According to some embodiments, a semiconductor device includes a die and a heat dissipation assembly. The heat dissipation assembly is disposed above the die. The heat dissipation assembly includes anisotropic thermally conductive material, which includes alternating first and second layered portions. The thermal conductivity of the first layered portions is higher than that of the second layered portions. Attached Figure Description
[0005] The following detailed description, taken in conjunction with the accompanying drawings, will best convey the various aspects of this disclosure. It should be noted that, in accordance with industry standard practice, the features are not drawn to scale. In fact, the dimensions of the features may be arbitrarily increased or decreased for clarity of explanation.
[0006] Figure 1 This is a flowchart of a method for manufacturing a heat dissipation assembly according to an embodiment of the present disclosure.
[0007] Figures 2A to 2B This is a cross-sectional view illustrating various stages of a method for manufacturing a dry film according to an embodiment of this disclosure.
[0008] Figure 2C This is a schematic diagram of the microstructure / nanostructure of a dry film according to an embodiment of the present disclosure.
[0009] Figure 3A This is a schematic diagram of a polymeric material according to an embodiment of the present disclosure.
[0010] Figure 3B This is a schematic diagram of a polymeric material according to an embodiment of the present disclosure.
[0011] Figures 4A to 4BThis is a cross-sectional view illustrating various stages of a method for manufacturing a dry film according to an embodiment of the present disclosure.
[0012] Figure 4C This is a schematic diagram of the microstructure / nanostructure of a dry film according to an embodiment of the present disclosure.
[0013] Figure 5A This is a schematic diagram of a copolymer of polymeric materials according to embodiments of the present disclosure.
[0014] Figure 5B This is a schematic diagram of a copolymer of polymeric materials according to embodiments of the present disclosure.
[0015] Figure 5C This is a schematic diagram of a copolymer of polymeric materials according to embodiments of the present disclosure.
[0016] Figure 6A This is a schematic diagram of a self-assembling composite material according to an embodiment of the present disclosure.
[0017] Figure 6B This is a schematic diagram of a self-assembling composite material according to an embodiment of the present disclosure.
[0018] Figure 6C This is a schematic diagram of a self-assembling composite material according to an embodiment of the present disclosure.
[0019] Figures 7A to 7B This is a cross-sectional view illustrating various stages of a method for manufacturing a dry film according to an embodiment of the present disclosure.
[0020] Figure 7C This is a schematic diagram of the microstructure / nanostructure of a dry film according to an embodiment of the present disclosure.
[0021] Figures 8A to 8C This is a cross-sectional view illustrating various stages of a method for manufacturing a heat dissipation assembly according to an embodiment of the present disclosure.
[0022] Figure 9 This is a cross-sectional view showing a semiconductor device according to an embodiment of the present disclosure.
[0023] Figure 10 This is a cross-sectional view showing a semiconductor device according to an embodiment of the present disclosure.
[0024] Figure 11 This is a cross-sectional view showing a semiconductor device according to an embodiment of the present disclosure.
[0025] Figure 12 This is a cross-sectional view showing a heat dissipation assembly according to an embodiment of the present disclosure.
[0026] Figures 13A to 13D This is a cross-sectional view illustrating various stages of a method for manufacturing a heat dissipation assembly according to an embodiment of the present disclosure. Detailed Implementation
[0027] The following disclosure provides numerous different embodiments or instances for implementing various features of this utility model. Specific examples of components and configurations are described below to simplify this disclosure. Of course, these are merely examples and are not intended to be limiting. For instance, in the following description, the formation of a first feature above or on a second feature may include embodiments where the first and second features are formed in direct contact, and may also include embodiments where additional features are formed between the first and second features, such that the first and second features are not in direct contact. Furthermore, reference numerals and / or letters may be repeated in various instances of this disclosure. This repetition is for simplicity and clarity and does not in itself indicate a relationship between the various embodiments and / or configurations discussed.
[0028] The following disclosure provides numerous different embodiments or instances for implementing various features of the provided subject matter. Specific examples of components and arrangements are described below to simplify this disclosure. These are, of course, merely examples and are not intended to be limiting. For example, in the following description, the formation of a first feature over or on a second feature may include embodiments where the first and second features are formed in direct contact, and may also include embodiments where additional features are formed between the first and second features such that the first and second features are not in direct contact. Additionally, reference numerals and / or letters may be repeated in various instances of this disclosure. This repetition is for simplicity and clarity and does not in itself indicate a relationship between the various embodiments and / or configurations discussed.
[0029] Additionally, for ease of description, spatial relative terms such as “below,” “under,” “lower,” “above,” and “upper” are used herein to describe the relationship between one element or feature and another element(s) shown in the diagrams. Besides the orientations depicted in the diagrams, the spatial relative terms are intended to cover different orientations of the device during use or operation. The device may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatial relative descriptors used herein shall be interpreted accordingly.
[0030] Figure 1 This is a flowchart of a method for manufacturing a heat dissipation assembly according to an embodiment of the present disclosure. Figures 2A to 2B This is a cross-sectional view illustrating various stages of a method for manufacturing a dry film DF1 according to an embodiment of the present disclosure. Figure 2C This is a schematic diagram of the microstructure / nanostructure of the dry film DF1 according to an embodiment of this disclosure. Reference Figure 2A and Figure 1In step S1, the polymeric material 110 and the thermally conductive material 120 are mixed in a solvent SL to obtain the composite material 100. In some embodiments, the polymeric material 110 comprises a homopolymer. In alternative embodiments, the polymeric material 110 comprises polymer blends or copolymers.
[0031] In some embodiments, the polymeric material 110 includes polyethylene, poly(vinylidene fluoride), polylactic acid, polydiacetylene, polycarbonate, polyolefin, polythiophene, poly(3-hexylthiophene), polyurethane, fluorene polyester, polyimide, or divinyltetramethyldisiloxane-bis(benzocyclobutene). In some embodiments, the polymeric material 110 has a linear structure. In alternative embodiments, the polymeric material 110 may have a grafted structure (e.g., Figure 3A (as shown) or star architecture (such as) Figure 3B (As shown in the illustration). In embodiments where the polymeric material has a grafted structure, functionalized linking groups can be used to control the grafting location and density of the grafted polymer. These functionalized linking groups can be stimulated by an external source.
[0032] In some embodiments, the thermally conductive material 120 includes metals (e.g., copper, silver), graphene, ceramics (e.g., silicon oxide (SiO2), hexagonal boron nitride (HNB), silicon carbide (SiC)), diamond, other suitable thermally conductive materials, or combinations thereof. In some embodiments, the thermally conductive material 120 includes nanoparticles, nanotubes, nanoplates, etc., or combinations thereof. For example, the thermally conductive material 120 includes metal particles, such as copper particles and silver particles. In some embodiments, the size (e.g., width, length, or particle size) of the thermally conductive material 120 is in the range of 1 nanometer to 50 nanometers. The mixing ratio of the thermally conductive material 120 and the polymeric material 110 can be in the range of 50 to 70 vol%, but this disclosure is not limited thereto. Within the above ranges, the final composite material exhibits ideal flexibility and thermal conductivity.
[0033] In some embodiments, the thermally conductive material 120 is bonded to specific sites on the polymeric material 110. For example, the thermally conductive material 120 is attached to a molecular segment of the polymeric material 110 or to the end of the polymeric material 110, while other portions of the polymeric material 110 are less readily bonded to the thermally conductive material 120. In some embodiments, the desired effect is achieved by incorporating functional groups that readily bond to the thermally conductive material 120 into the polymeric material 110. Functional groups may include thiols, hydroxyl groups, amines, etc. The thermally conductive material 120 can bond to these functional groups, while portions of the polymeric material 110 lacking functional groups are less readily bonded to the thermally conductive material 120. In some embodiments, the thermally conductive material 120 is bonded to the polymeric material 110 via van der Waals forces, hydrogen bonds, or other bonding mechanisms. Figure 2A As shown, more than one thermally conductive material 120 may be bonded to the polymeric material 110. However, this disclosure is not limited thereto.
[0034] In some embodiments, the polymeric material 110 and the thermally conductive material 120 are dissolved and / or dispersed in a solvent SL. The solvent SL includes organic solvents such as acetone, ether, methanol, ethanol, benzene, chloroform, n-hexane, acetic acid, ethyl acetate, butyl acetate, dichloromethane, and combinations thereof. In some embodiments, at least one co-solvent is also used to improve solubility and control the evaporation rate. The polymeric material 110 and the thermally conductive material 120 may be added to the solvent SL individually or together and thoroughly mixed, allowing the thermally conductive material 120 to bind to the polymeric material 110. Because the thermally conductive material 120 and the polymeric material 110 can move freely in the solvent SL, the thermally conductive material 120 has a higher probability of binding to specific sites on the polymeric material 110, such as specific molecular fragments, specific functional groups, or specific ends. In some embodiments, adding a dispersant to the solvent SL can promote the bonding of the thermally conductive material 120 with the polymeric material 110.
[0035] refer to Figure 2B and Figure 1In step S2, a dry film DF1 is formed from the composite material 100. In some embodiments, the dry film DF1 is formed by solution casting, spread coating, spin coating, or a combination thereof on the composite material 100. For example, a solvent SL containing the composite material 100 is applied to the platform PT using methods such as roller coating, brushing, spraying, tape casting, or immersion. Subsequently, the solvent SL is evaporated, resulting in the formation of the dry film DF1. In some embodiments, the thickness of the dry film DF1 is less than 0.5 mm. For example, the thickness of the dry film DF1 is in the range of 0.1 mm to 0.5 mm. In some embodiments, the platform PT is a polytetrafluoroethylene paper (Teflon paper) or the like.
[0036] During solvent SL evaporation, polymeric material 110 and thermally conductive material 120 can self-assemble to form an anisotropic thermally conductive material 130. For example... Figure 2B , 2C As shown, polymeric material 110 is continuously and orderly arranged along a first direction to form an anisotropic thermally conductive material 130. The first direction is, for example, a vertical or substantially vertical direction. The orientation of the polymeric material 110 can be controlled by solution casting and fast kinetics. In some embodiments, the polymeric material 110 may be partially crystallized to obtain better thermal conductivity. Thermally conductive material 120 may be orderly arranged for anisotropic thermal conduction. In some embodiments, the anisotropic thermally conductive material 130 includes a plurality of thermally conductive portions TCA1 and a plurality of thermally insulating portions TIA1 arranged alternately along a second direction. In some embodiments, the thermally conductive portions TCA1 are also referred to as first layered portions, and the thermally insulating portions TIA1 are also referred to as second layered portions, and the thermally conductive portions TCA1 and the thermally insulating portions TIA1 are arranged in a layered manner. The second direction is, for example, a horizontal or substantially horizontal direction. For example, the thermally conductive portion TCA1 is formed from a segment (e.g., a portion) of the thermally conductive material 120 and a polymeric material 110 bonded to the thermally conductive material 120, and the thermally insulating portion TIA1 is formed from a segment (e.g., a portion) of the polymeric material 110 that is not bonded to the thermally conductive material 120. In other words, since the polymeric material 110 is the framework of the anisotropic thermally conductive material 130, the polymeric material 110 forms both the thermally conductive portion TCA1 and the thermally insulating portion TIA1, while the thermally conductive material 120 only forms the thermally conductive portion TCA1. In some embodiments, the thickness of the thermally conductive portion TCA1 is in the range of 5 nanometers to 100 nanometers, and the thickness of the thermally insulating portion TIA1 is in the range of 5 nanometers to 100 nanometers.
[0037] In some embodiments, due to differences in surface energy, hydrophilic / hydrophobic properties, band gap, or other properties, the portions of the polymeric material 110 bonded to the thermally conductive material 120 and the portions of the polymeric material 110 not bonded to the thermally conductive material 120 tend to aggregate / accumulate, thus forming a structure as shown in the figure. Figure 2C The layered structure shown.
[0038] In some embodiments, the thermally conductive portion TCA1 with thermally conductive material 120 exhibits higher thermal conductivity. Conversely, the thermally insulating portion TIA1 without thermally conductive material 120 has lower thermal conductivity. This arrangement allows heat to easily propagate within the thermally conductive portion TCA1, but restricts transmission through the thermally insulating portion TIA1, enabling the anisotropic thermally conductive material 130 to have an anisotropic thermally conductive structure ACS1 and thus anisotropic thermal conductivity. In some embodiments, the formed dry film DF1 has high thermal conductivity (e.g., but not limited to 100 W / m²) in a first direction (e.g., a direction perpendicular to the bottom surface of the dry film DF1). -1 K -1 Up to 250Wm -1 K -1 In some embodiments, the dry film DF1 has a lower thermal conductivity (e.g., but not limited to less than or equal to about 100 W / m²) in a second direction (e.g., a direction substantially parallel to the bottom surface of the dry film DF1) than in the first direction. - 1 K -1 In some embodiments, the difference between the maximum thermal conductivity (in the first direction) and the minimum thermal conductivity (in the second direction) of the dry film DF1 is greater than 10 Wm⁻¹K⁻¹, 20 Wm⁻¹K⁻¹, 30 Wm⁻¹K⁻¹ or more.
[0039] Figures 4A to 4B This is a cross-sectional view illustrating various stages of a method for manufacturing dry film DF2 according to an embodiment of this disclosure. Figure 4C This is a schematic diagram of the microstructure / nanostructure of the dry film DF2 according to an embodiment of the present disclosure. Figures 4A to 4C Implementation examples and Figures 2A to 2C The main difference in the embodiments is that the polymeric material 210 includes a copolymer, therefore the same or similar description can be referred to. Figures 2A to 2C The specific implementation examples are not described in detail here.
[0040] Figure 4A and reference Figure 1In step S1, the polymeric material 210 and the thermally conductive material 120 are mixed in a solvent SL to obtain a composite material 200. In some embodiments, the polymeric material 210 comprises a copolymer, which includes a first structural unit 212 and a second structural unit 214 different from the first structural unit 212. In some embodiments, the first structural unit 212 is also referred to as a first portion of the polymeric material 210, and the second structural unit 212 is also referred to as a second portion of the polymeric material 210.
[0041] In some embodiments, one of the first structural unit 212 and the second structural unit 214 comprises a conjugated crystalline polymer having π bonds, and the other of the first structural unit 212 and the second structural unit 214 comprises a random block. In some embodiments, the conjugated crystalline polymer having π bonds includes poly(alkoxyphenylenevinylene), poly(p-phenylene), polyacetylene, PA, etc. In some embodiments, the random block includes polystyrene, polyethylene glycol, etc. Generally, conjugated crystalline polymers having π bonds are more rigid, while random blocks are more flexible. By combining a conjugated crystalline polymer with a random block, an anisotropic thermally conductive structure (see reference) can be obtained. Figure 4C To achieve better directionality.
[0042] The first structural unit 212 and the second structural unit 214 may have different properties, such as hydrophilic / hydrophobic properties, different band gaps, or other different characteristics. Due to these differences, the first structural unit 212 is compatible with the thermally conductive material 120, while the second structural unit 214 is incompatible with the thermally conductive material 120. That is, the thermally conductive material 120 is bonded to the first structural unit 212 rather than to the second structural unit 214. In some embodiments, the thermally conductive material 120 is bonded to the first structural unit 212 through van der Waals forces, hydrogen bonds, or other bonding mechanisms.
[0043] In some embodiments, there is no direct bond between the thermally conductive material 120 and the first structural unit 212 or the second structural unit 214. Because the thermally conductive material 120 is more compatible with the first structural unit 212, the thermally conductive material 120 tends to move near the first structural unit 212 (e.g., at the end of the first structural unit 212) and aggregate near the first structural unit 212 due to cohesive forces between the thermally conductive materials 120 (e.g., between particles). In such embodiments, when adjacent first structural units 212 come into contact and / or join with each other through self-assembly, the thermally conductive material 120 aggregates in the same region as the first structural unit 212.
[0044] exist Figures 4A to 4C In this embodiment, polymeric material 210 is shown as a copolymer having a linear structure. In alternative embodiments, polymeric material 210 may have a grafted structure (e.g., Figure 5A and 6A As shown), star architecture (as shown) Figure 5B and 6B As shown in the diagram), or a miktoarm star architecture (such as...). Figure 5C and 6C (As shown). The grafting density and grafting location within the copolymer can be pre-designed using functionalized linking groups responsive to an external source. Controlling the grafting density and grafting location may help achieve specific mechanical properties. In some embodiments, the grafted copolymer may include poly(p-phenylene)-polystyrene, etc. It should be noted that in Figure 5B In the star-shaped architecture, the first structural unit 212 is located at the center of the structure and the second structural unit 214 is located at the periphery of the structure, but this disclosure is not limited thereto. In alternative embodiments, the second structural unit 214 may be located at the center of the structure and the first structural unit 212 may be located at the periphery of the structure. In some embodiments, the thermally conductive material 120 is similar to or the same as the thermally conductive material 120 described above, and will not be repeated here.
[0045] In some embodiments, such as Figure 4AAs shown, polymeric material 210 is dissolved and / or dispersed in solvent SL. Solvent SL includes organic solvents such as acetone, diethyl ether, methanol, ethanol, benzene, chloroform, n-hexane, acetic acid, ethyl acetate, butyl acetate, dichloromethane, etc., or combinations thereof. Polymeric material 210 and thermally conductive material 120 may be added to solvent SL individually or together and thoroughly mixed so that thermally conductive material 120 can bond to the first structural unit 212. Because thermally conductive material 120 and copolymer (i.e., first structural unit 212 and second structural unit 214) can move freely in solvent SL, thermally conductive material 120 has a higher probability of bonding to the first structural unit 212. In some embodiments, the addition of a dispersant to solvent SL can promote the bonding of thermally conductive material 120 to the copolymer.
[0046] refer to Figure 4B and Figure 1 In step S2, a dry film DF2 is formed from the composite material 200. In some embodiments, the dry film DF2 is formed by solution casting of the composite material 200. For example, a solvent SL containing the composite material 200 is applied to a platform PT using methods such as roller coating, brush coating, spraying, casting, or impregnation. Subsequently, the solvent SL is evaporated, resulting in the formation of the dry film DF2. In some embodiments, the thickness of the dry film DF2 is less than 0.5 mm. For example, the thickness of the dry film DF2 is in the range of 0.1 mm to 0.5 mm. In some embodiments, the platform PT is polytetrafluoroethylene paper, etc.
[0047] During solvent SL evaporation, polymeric material 210 (e.g., first structural unit 212 and second structural unit 214) and thermally conductive material 120 can self-assemble to form an anisotropic thermally conductive material 230. For example... Figure 4B , 4CAs shown, polymeric materials 210 (e.g., first structural unit 212 and second structural unit 214) are continuously and orderly arranged along a first direction to form an anisotropic thermally conductive material 230. The first direction is, for example, a vertical or substantially vertical direction. In some embodiments, the first structural units 212 are arranged adjacent to each other because they have similar properties. For example, the end of one first structural unit 212 is adjacent to the end of another first structural unit 212. The orientation of the polymeric material 210 can be controlled by solution casting and rapid kinetics. In some embodiments, the polymeric material 210 may be partially crystallized to obtain better thermal conductivity. The thermally conductive material 120 may be orderly arranged for anisotropic thermal conductivity. In some embodiments, the anisotropic thermally conductive material 230 includes a plurality of thermally conductive portions TCA2 and a plurality of thermally insulating portions TIA2 arranged alternately along a second direction. The second direction is, for example, a horizontal or substantially horizontal direction. In some embodiments, the thermally conductive portion TCA2 is also referred to as the first layered portion, and the thermally insulating portion TIA2 is also referred to as the second layered portion, and the thermally conductive portion TCA2 and the thermally insulating portion TIA2 are arranged in a layered manner. For example, the thermally conductive portion TCA2 is formed of a thermally conductive material 120 and a first structural unit 212 bonded to the thermally conductive material 120, and the thermally insulating portion TIA2 is formed of a second structural unit 214 not bonded to the thermally conductive material 120. In some embodiments, the thickness of the thermally conductive portion TCA2 is in the range of 5 nanometers to 100 nanometers, and the thickness of the thermally insulating portion TIA2 is in the range of 5 nanometers to 100 nanometers.
[0048] In some embodiments, due to differences in surface energy, hydrophilic / hydrophobic properties, band gap, or other properties, the first structural unit 212 bonded to the thermally conductive material 120 and the second structural unit 214 not bonded to the thermally conductive material 120 tend to aggregate / accumulate, thereby forming a structure as shown in the figure. Figure 4C The layered structure shown.
[0049] In some embodiments, the thermally conductive portion TCA2, having thermally conductive material 120, exhibits higher thermal conductivity. Conversely, the thermally insulating portion TIA2, lacking thermally conductive material 120, has lower thermal conductivity. This arrangement allows heat to easily propagate within the thermally conductive portion TCA2, but restricts transmission through the thermally insulating portion TIA2, enabling the anisotropic thermally conductive material 230 to have an anisotropic thermally conductive structure ACS2 and thus anisotropic thermal conductivity. In some embodiments, the dry film DF2 has high thermal conductivity (e.g., but not limited to 100 W / m²) in a first direction (e.g., a direction substantially perpendicular to the bottom surface of the dry film DF2). -1 K -1 Up to 250Wm -1 K -1In some embodiments, the dry film DF2 has a lower thermal conductivity (e.g., but not limited to less than or equal to about 100 W / m²) in a second direction (e.g., a direction substantially parallel to the bottom surface of the dry film DF2) than in the first direction. - 1 K -1 In some embodiments, the difference between the maximum thermal conductivity (in the first direction) and the minimum thermal conductivity (in the second direction) of the dry film DF2 is greater than 10 W / m². -1 K -1 20Wm -1 K -1 30Wm -1 K -1 Or more.
[0050] Figures 7A to 7B This is a cross-sectional view illustrating various stages of a method for manufacturing dry film DF3 according to an embodiment of this disclosure. Figure 7C This is a schematic diagram of the microstructure / nanostructure of the dry film DF3 according to an embodiment of the present disclosure. Figures 7A to 7C The embodiments and Figures 2A to 2C The main difference in the embodiments is that the polymeric material 310 contains polymer blends, therefore the same or similar descriptions can be referred to. Figures 2A to 2C The embodiments described herein will not be repeated here.
[0051] refer to Figure 7A and Figure 1 In step S1, the polymeric material 310 and the thermally conductive material 120 are mixed in a solvent SL to obtain the composite material 300. In some embodiments, the polymeric material 310 comprises a polymer blend having a first polymer 312 and a second polymer 314. In some embodiments, the first polymer 312 is also referred to as a first portion of the polymeric material 310, and the second polymer 314 is also referred to as a second portion of the polymeric material 310. In some embodiments, the first polymer 312 and the second polymer 314 each have a linear architecture. In alternative embodiments, the first polymer 312 and the second polymer 314 each have a grafted architecture, a star architecture, or a hybrid star structure.
[0052] The first polymer 312 is different from and will not polymerize with the second polymer 314. In some embodiments, the first polymer 312 and the second polymer 314 have different properties, such as hydrophilic / hydrophobic properties, different band gaps, or other different properties. Due to these differences, the first polymer 312 is compatible with the thermally conductive material 120, while the second polymer 314 is incompatible with the thermally conductive material 120. That is, the thermally conductive material 120 is bonded to the first polymer 312, not to the second polymer 314. In some embodiments, the thermally conductive material 120 is bonded to the first polymer 312 through van der Waals forces, hydrogen bonds, or other bonding mechanisms.
[0053] In some embodiments, there is no direct bond between the thermally conductive material 120 and the first polymer 312 or the second polymer 314. Because the thermally conductive material 120 is more compatible with the first polymer 312, the thermally conductive material 120 tends to move near the first polymer 312 (e.g., at the ends of the first polymer 312) and aggregate near the first polymer 312 due to cohesive forces between the thermally conductive materials 120 (e.g., between particles). In such embodiments, when adjacent first polymers 312 come into contact and / or bond with each other through self-assembly, the thermally conductive material 120 aggregates in the same region as the first polymer 312.
[0054] In some embodiments, such as Figure 7A As shown, polymeric material 310 is dissolved and / or dispersed in solvent SL. Solvent SL includes organic solvents such as acetone, diethyl ether, methanol, ethanol, benzene, chloroform, n-hexane, acetic acid, ethyl acetate, butyl acetate, dichloromethane, etc., or combinations thereof. Polymeric material 310 and thermally conductive material 120 may be added to solvent SL individually or together and thoroughly mixed, such that thermally conductive material 120 can bond to the first polymer 312 of polymeric material 210. Because thermally conductive material 120 and the first polymer 312 can move freely in solvent SL, thermally conductive material 120 has a higher probability of bonding to the first polymer 312. In some embodiments, the addition of a dispersant to solvent SL can promote the bonding of thermally conductive material 120 to the copolymer.
[0055] refer to Figure 7B and Figure 1In step S2, a dry film DF3 is formed from the composite material 300. In some embodiments, the dry film DF3 is formed by solution casting of the composite material 300. For example, a solvent SL containing the composite material 300 is applied to the platform PT using methods such as roller coating, brush coating, spraying, casting, or impregnation. Subsequently, the solvent SL is evaporated, resulting in the formation of the dry film DF3. In some embodiments, the thickness of the dry film DF3 is less than 0.5 mm. For example, the thickness of the dry film DF3 is in the range of 0.1 mm to 0.5 mm. In some embodiments, the platform PT is polytetrafluoroethylene paper or other suitable material.
[0056] During solvent SL evaporation, polymeric material 310 and thermally conductive material 120 can self-assemble to form an anisotropic thermally conductive material 330. For example... Figure 7B and 7C As shown, polymeric materials 310 (e.g., a first polymer 312 and a second polymer 314) are continuously and orderly arranged along a first direction to form an anisotropic thermally conductive material 330. The first direction is, for example, a vertical or substantially vertical direction. The orientation of the polymeric materials 310 can be controlled by solution casting and rapid kinetics. In some embodiments, the polymeric materials 310 may be partially crystallized to obtain better thermal conductivity. The thermally conductive material 120 may be orderly arranged for anisotropic thermal conduction. In some embodiments, the anisotropic thermally conductive material 330 includes a plurality of thermally conductive portions TCA3 and a plurality of thermally insulating portions TIA3 arranged alternately along a second direction. The second direction is, for example, a horizontal or substantially horizontal direction. For example, the thermally conductive portions TCA3 are formed of the thermally conductive material 120 and the first polymer 312 bonded to the thermally conductive material 120, and the thermally insulating portions TIA3 are formed of the second polymer 314 not bonded to the thermally conductive material 120. In some embodiments, the thermally conductive portion TCA3 is also referred to as the first layered portion, and the thermally insulating portion TIA3 is also referred to as the second layered portion, and the thermally conductive portion TCA3 and the thermally insulating portion TIA3 are arranged in a layered manner.
[0057] In some embodiments, due to differences in surface energy, hydrophilic / hydrophobic properties, band gap, or other properties, the first polymer 312 bonded to the thermally conductive material 120 and the second polymer 314 not bonded to the thermally conductive material 120 tend to aggregate / accumulate, thereby forming a structure as shown in the figure. Figure 7C The layered structure shown.
[0058] In some embodiments, the thermally conductive portion TCA3 with thermally conductive material 120 exhibits higher thermal conductivity. Conversely, the thermally insulating portion TIA3 without thermally conductive material 120 has lower thermal conductivity. This arrangement allows heat to easily propagate within the thermally conductive portion TCA3, but restricts transmission through the thermally insulating portion TIA3, enabling the anisotropic thermally conductive material 330 to have an anisotropic thermally conductive structure ACS3 and thus anisotropic thermal conductivity. In some embodiments, the dry film DF3 has high thermal conductivity (e.g., but not limited to 100 W / m²) in a first direction (e.g., a direction substantially perpendicular to the bottom surface of the dry film DF3). -1 K -1 Up to 250Wm -1 K -1 In some embodiments, the dry film DF3 has a lower thermal conductivity (e.g., but not limited to less than or equal to about 100 W / m²) in a second direction (e.g., a direction substantially parallel to the bottom surface of the dry film DF2) than in the first direction. - 1 K -1 In some embodiments, the difference between the maximum thermal conductivity (in the first direction) and the minimum thermal conductivity (in the second direction) of the dry film DF3 is greater than 10 W / m. -1 K -1 20Wm -1 K -1 30Wm -1 K -1 Or more.
[0059] In some embodiments, Figure 2B Dry film DF1 in Figure 4B In the dry film DF2 or Figure 7B The dry film DF3 in this paper can be directly used as a heat dissipation component and can be formed on or placed on devices such as semiconductor chips, packaging components, etc., to provide heat dissipation. Detailed explanation follows.
[0060] Figures 8A to 8C This is a cross-sectional view illustrating various stages of a method for manufacturing a heat dissipation assembly according to an embodiment of the present disclosure. Reference Figure 8A and Figure 1 Optional step S3, in obtaining a dry film (e.g. Figure 2B Dry film DF1 in Figure 4B In the dry film DF2 or Figure 7B After the dry film (DF3) is dried, it is broken up to obtain composite fragments (CP). For example, the dry film is removed from the platform by brushing. As previously mentioned, the dry film comprises an anisotropic thermally conductive material self-assembled from polymeric and thermally conductive materials, and the composite fragments (CP) also comprise anisotropic thermally conductive materials. In other words, the composite fragments (CP) may each comprise a thermally conductive portion and a thermally insulating portion.
[0061] Next, using composite fragments (CP) as raw materials, heat dissipation components are manufactured through 3D printing, template synthesis, or other techniques. In some embodiments, such as Figure 8A As shown, the heat dissipation component is made using 3D printing technology, so the composite fragments CP are placed into the material library of the 3D printer 3DP.
[0062] refer to Figure 8B and Figure 1 In step S4, the anisotropic thermally conductive material (i.e., composite fragments CP) is heated, causing the polymeric material within the composite to melt and form a processing material MCP. The processing material MCP can be a paste or a viscous material with low flowability. The heating temperature of the processing material MCP can exceed the glass transition temperature of the polymeric material in the composite. For example, the glass transition temperature of the polymeric material in the composite is in the range of 150°C to 200°C.
[0063] Then, the processed material MCP is applied layer by layer (e.g., extruded) onto the platform PT1 to form a heat dissipation assembly HDC1 with the desired shape, such as... Figure 8C As shown. In some embodiments, due to the adhesive properties of the processing material MCP, the heat dissipation component HDC1 can also be directly formed on the device (e.g., semiconductor chip, packaging component, etc.) using 3D printing technology.
[0064] In some embodiments, since the processed material MCP is in a molten state, the thermally conductive material 120 in the processed material MCP can move during the solidification process of the processed material MCP, which helps to achieve a regular arrangement of the thermally conductive material 120. The heat dissipation assembly HDC1 may include multiple anisotropic thermally conductive structures ACS (or layered structures), each anisotropic thermally conductive structure ACS comprising an alternating arrangement of a thermally conductive portion TCA (also referred to as a first layered portion) and a thermally insulating portion TIA (also referred to as a second layered portion). The thermally conductive portion TCA with thermally conductive material 120 exhibits higher thermal conductivity. Conversely, the thermally insulating portion TIA without thermally conductive material 120 has lower thermal conductivity. Through this structure, heat can easily propagate within the thermally conductive portion TCA, but the transmission through the thermally insulating portion TIA is restricted, thus giving the anisotropic thermally conductive structure ACS anisotropic thermal conductivity. The anisotropic thermally conductive structure ACS in the heat dissipation assembly HDC1 is similar. Figure 2B and 2C The anisotropic thermally conductive structure ACS1 in the middle, Figure 4B and 4C The anisotropic thermally conductive structure ACS2 in the middle, Figure 7B and 7C The anisotropic thermally conductive structure ACS3 or Figure 6B and 6CThe anisotropic thermal conductivity structure in the material depends on the choice of materials.
[0065] In some embodiments, the processing material MCP may be subjected to shear forces during 3D printing. Shear forces help orient the thermally conductive portion TCA and the thermally insulating portion TIA to extend in a direction substantially perpendicular to the top surface of the platform PT1. In other words, this helps the thermally conductive portion TCA and the thermally insulating portion TIA align in a direction substantially parallel to the top surface of the platform PT1. In some cases, heat may be applied to the platform PT1 to promote a more regular arrangement of the thermally conductive structure ACS. Furthermore, on the top surface of the platform PT1, increased entropy generally reduces surface energy. This causes the thermally conductive portion TCA and the thermally insulating portion TIA of the anisotropic thermally conductive structure ACS in contact with the top surface of the platform PT1 to tend to align in a direction substantially parallel to the top surface of the platform PT1, thereby allowing different materials to contact the top surface of the platform PT1 to increase entropy.
[0066] Grain boundary-like structures can exist between these anisotropic thermally conductive structures (ACS). The arrangement direction of the thermally conductive portion (TCA) and the thermally insulating portion (TIA) of each anisotropic thermally conductive structure (ACS) may deviate slightly from the arrangement direction of the thermally conductive portion (TCA) and the thermally insulating portion (TIA) of the adjacent anisotropic thermally conductive structure (ACS), but the thermally conductive portion (TCA) and the thermally insulating portion (TIA) mostly extend upwards. Therefore, the heat dissipation assembly (HDC1) has a higher thermal conductivity in the upward direction D1 (or in a direction substantially perpendicular to the bottom surface of the heat dissipation assembly (HDC1)) than in the horizontal direction D2 (or in a direction substantially parallel to the bottom surface of the heat dissipation assembly (HDC1)). In some embodiments, on the bottom surface 402b of the heat dissipation assembly (HDC1) in contact with the platform (PT1), a plurality of thermally conductive portions (TCA) and thermally insulating portions (TIA) are arranged in the horizontal direction D2.
[0067] In some embodiments, the heat dissipation assembly HDC1 is a heat sink including a base 402 and a protruding structure 404. The protruding structure 404 is connected to and extends upward from the top surface 402t of the base 402. The base 402 and the protruding structure 404 contain anisotropic thermally conductive material and therefore have an anisotropic thermally conductive structure ACS. The thermal conductivity of the base 402 and the protruding structure 404 in a direction D1 substantially perpendicular to the top surface 402t of the base 402 is higher than that in a direction D2 substantially parallel to the top surface 402t of the base 402.
[0068] In some embodiments, the protruding structure 404 is a fin structure. In some embodiments, the protruding structure 404 extends upward from the top surface 402t of the base 402 in different directions to provide flexibility for the design of the heat sink. The protruding structure 404 can have different lengths and different directions of extension, thereby allowing for a more flexible design of the heat sink assembly HDC1. In some embodiments, the polymeric material in the heat sink assembly HDC1 contains an elastomer. Therefore, the heat sink assembly HDC1 can act as a flexible heat sink and can deform under external forces.
[0069] In some embodiments, the protruding structure 404 includes sidewalls that are inclined or perpendicular to the top surface 402t of the base 402, but this disclosure is not limited thereto. In alternative embodiments (such as...) Figure 12 As shown, the protruding structure 404 may have curved sidewalls. In other words, the protruding structure 404 may have a non-flat surface.
[0070] In some embodiments, after 3D printing, the heat dissipation component HDC1 undergoes additional annealing to obtain a smoother surface. In some embodiments, annealing the heat dissipation component HDC1 to near the glass transition temperature of the polymer material of the anisotropic thermally conductive material helps to improve the directionality of the anisotropic thermally conductive structure ACS.
[0071] In some embodiments, a 3D printer (3DP) is used to form the heat dissipation component HDC1 with the desired shape, but this disclosure is not limited thereto. In alternative embodiments, composite fragments CP (reference) Figure 8A It is also heated and used as an adhesive material, thermal grease material, thermal interface material, etc.
[0072] Figure 9 This is a cross-sectional view illustrating a semiconductor device according to an embodiment of this disclosure. See also... Figure 9 A package assembly 40 is provided, which may contain a plurality of identical package substrates 42. In some embodiments, the package substrate 42 may be a cored package substrate containing a core, or a coreless package substrate in which no core is present. In alternative embodiments, the package assembly 40 may be different types of components, such as an interposer wafer, a printed circuit board, a reconfigured wafer, etc. It may or may not contain active components such as transistors and diodes, and passive components such as capacitors, inductors, or resistors.
[0073] In some embodiments, the encapsulation component 40 includes a plurality of dielectric layers, including a dielectric layer 43, a dielectric layer 44 above the dielectric layer 43, and a dielectric layer 45 below the dielectric layer 43. In some cases, dielectric layers 44 and 45 may be made of dry films, such as Ajinomoto build-up films (ABF). Alternatively, they may consist of or contain materials such as polybenzoxazole (PBO), polyimide, benzocyclobutene (BCB), and similar materials, which may be applied in a flowable form and subsequently cured. When used in a core, dielectric layer 43 may consist of materials such as epoxy resin, resin, glass fiber, prepreg (including epoxy resin, resin, and / or glass fiber), glass, molding compounds, plastics, combinations thereof, or multiples thereof. In alternative embodiments, dielectric layer 43 may be constructed of polymers such as PBO, polyimide, BCB, or similar materials. The redistribution line 46 includes a metal wire, pads, and vias, embedded within the dielectric layer 43, forming a through connection in the package assembly 40.
[0074] Package 10 is located above package assembly 40 and includes package assemblies 21, 31, and 32. In some embodiments, package assembly 21 serves as an interposer and includes a substrate 22 and a corresponding dielectric layer 23. Therefore, package assembly 21 may also be referred to as interposer 21, although other types of package assembly 21 are also possible. The schematic diagram of interposer 21 does not show detailed features such as dielectric layers 23, metal lines, vias, metal pads, and other elements on the top and bottom sides of substrate 22. When substrate 22 is made of silicon, substrate vias 24 are referred to as through-silicon vias 24, which penetrate substrate 22 and are used to interconnect conductive features on both sides of substrate 22. Solder regions 25 may be located below and connected to the interposer for bonding interposer 21 to package assembly 40. Alternatively, other bonding methods (e.g., metal-to-metal direct bonding or hybrid bonding) may also be used to bond package assembly 21 to package assembly 40.
[0075] In some embodiments, encapsulation components 31 and 32 are attached to their respective underlying encapsulation component 21. Figure 9 The diagram shows a cross-sectional view of one package component 31 and two package components 32 all joined to the same package component 21. However, the actual number of package components 31 and 32 can be adjusted as needed.
[0076] Each of package components 31 and 32 may be a device die, a package containing a device die, a system-on-a-chip (SoC) die comprising multiple integrated circuits (or device dies) integrated into a system, etc. The device dies within package components 31 and 32 may be or may include logic dies, memory dies, input / output dies, integrated passive devices, etc., or combinations thereof. For example, the logic device dies in package components 31 and 32 may be a central processing unit (CPU) die, a graphics processing unit (GPU) die, a mobile application dies, a microcontroller unit (MCU) die, a baseband (BB) die, an application processor (AP) die, etc. The memory dies in package components 31 and 32 may include static random access memory (SRAM) dies, dynamic random access memory (DRAM) dies, etc.
[0077] In the following discussion, based on certain exemplary embodiments, package component 31 is referred to as a device die, which in some cases may be a SoC die. On the other hand, package component 32 may represent a memory stack, such as a High-Performance Memory (HBM) stack. Package component 32 may include memory dies organized into a die stack, wherein a sealant (e.g., a molding compound) surrounds the memory dies.
[0078] Package assemblies 31 and 32 are typically connected to the underlying package assembly 21 via solder areas 33. Underfill material 34 is distributed between package assemblies 31 and 32 and the underlying package assembly 21. In some embodiments, packages 10 are created using a chip-on-wafer (CoW) bonding process. In this process, discrete chips / packages (such as package assemblies 31 and 32) are bonded to package assembly 21 retained in an uncuttered wafer, forming a reconstructed wafer. After the underfill 34 is applied, a sealant such as a molding compound 35 may be added. A planarization process is performed on the molding compound 35 so that its top surface is flush with the top surfaces of package assemblies 31 and 32. This results in the formation of the reconstructed wafer, which is then sawn into individual packages 10, each package 10 being bonded to package assembly 40.
[0079] Other package components may be present, such as independent passive devices (IPDs) 47 incorporated into package component 40. According to some embodiments, IPDs 47 are discrete components, including capacitors, inductors, resistors, or similar components, and they do not contain active components such as transistors.
[0080] Thermal interface material (TIM) 61 is applied to package 10. Although one TIM 61 is shown, one, two, or more TIMs 61 may be provided on the same package 10. TIM 61 is a film-type TIM, meaning that it is a pre-formed solid TIM when attached to package 10. This contrasts with liquid-type TIMs, which are dispensed in a flowable state and then solidify into a solid form. TIM 61 may be rigid and attached via a pick-and-place process, or it may be a flexible film that is rolled onto a positioning surface and then pushed over package 10. In some embodiments, TIM 61 contacts the top surfaces of package assemblies 31 and 32.
[0081] Adhesive 68 is applied to the top surface of the encapsulation assembly 40. Adhesive 68 can be dispensed in a manner forming a ring surrounding the encapsulation 10, or it can be dispensed as multiple separate portions arranged in a ring pattern. The thermal conductivity of adhesive 68 can be lower than that of TIM 61. For example, adhesive 68 has a thermal conductivity value below approximately 1 W / k*m, but higher thermal conductivity values are also possible.
[0082] A cover 70 is disposed on the TIM 61 above the package assembly 40. In some embodiments, when the package assembly 40 is wafer-level and includes multiple package assemblies 42, multiple covers 70 are present, each cover 70 being attached to one of the package assemblies 42. In some embodiments, the cover 70 is made of metal or other thermally conductive material.
[0083] The cap 70 includes an upper portion 70A and a flat bottom surface that contacts the TIM 61. In some embodiments, the cap 70 may also include a lower portion (skirt) 70B extending downward to adhere to the adhesive 68. The lower portion 70B may form a complete ring surrounding the package 10. However, in alternative embodiments, the cap 70 may not include the lower portion 70B. Therefore, in these cases, the described adhesive dispensing process can be omitted.
[0084] The heat dissipation component HDC1 is placed on the top surface of the package 10. In some embodiments, the heat dissipation component HDC1 is attached to the cover 70 and covers the package assembly 31 (e.g., a die). In some embodiments, the heat dissipation component HDC1 is attached to the cover 70 through an adhesive layer 401, but this disclosure is not limited thereto. In alternative embodiments, the heat dissipation component HDC1 is formed directly on the cover 70, and the adhesive layer 401 may be omitted. The cover 70 is disposed between the package assembly 31 and the heat dissipation component HDC1.
[0085] Due to the presence of a heat conduction structure formed by the self-assembly of polymeric and thermally conductive materials in the heat dissipation component HDC1, the heat dissipation component HDC1 has a higher thermal conductivity in direction D1, which is substantially perpendicular to the top surface of the encapsulation component 31, than in direction D2, which is substantially parallel to the top surface of the encapsulation component 31.
[0086] In some embodiments, the external component 500 is disposed on the heat dissipation component HDC1. In some embodiments, the side of the external component 500 facing the heat dissipation component HDC1 may be a non-planar surface (e.g., it may be curved). Because the heat dissipation component HDC1 is flexible and has protruding structures 404 with different orientations / lengths, it can more easily fit to the non-planar surface of the external component 500 in some embodiments.
[0087] Figure 10 This is a cross-sectional view illustrating a semiconductor device according to an embodiment of the present disclosure. It should be noted here that... Figure 10 The embodiments in the text follow the example. Figure 9 In the embodiments described herein, the component reference numerals and partial contents are used to indicate the same or similar components, and descriptions of the same technical content are omitted. Descriptions of the omitted portions can be found in the foregoing embodiments and will not be repeated here.
[0088] refer to Figure 10 In some embodiments, the heat dissipation component HDC2 is formed directly on the package 10. For example, the heat dissipation component HDC2 is formed directly on the package components 31 and 32, and on the molding compound 35. The heat dissipation component HDC2 can be used as a TIM and for attaching the cover 70 to the package 10. In some embodiments, when reattached to the package 10, the heat dissipation component HDC2 is a pre-formed solid TIM. The heat dissipation component HDC3 is formed on the cover 70 and on the package components 31 and 32. In some embodiments, the heat dissipation component HDC3 is sheet-like. In some embodiments, the heat dissipation component HDC3 is a pre-formed solid sheet that is then attached to the cover 70.
[0089] Heat dissipation components HDC2 and HFC3 respectively include anisotropic thermally conductive materials 230A and 230B, which comprise polymeric materials 210A and 210B and thermally conductive materials 120A and 120B. The polymeric materials 210A and 210B and the thermally conductive materials 120A and 120B form an anisotropic thermally conductive structure through self-assembly. The anisotropic thermally conductive structure formed by the polymeric materials 210A and 210B and the thermally conductive materials 120A and 120B has similarity or similarity to that described in previous chapters. Figure 2B and 2C The anisotropic thermally conductive structure ACS1 in Figure 4B and 4C The anisotropic thermally conductive structure ACS2 in Figure 7B and 7C The anisotropic thermally conductive structure ACS3 or Figure 6B and 6C The structure and manufacturing method of the anisotropic thermally conductive structure are described. In some embodiments, the anisotropic thermally conductive material 230B and the anisotropic thermally conductive material 230A may comprise the same or different materials, depending on the purpose.
[0090] Figure 11 A cross-sectional view of a semiconductor device according to an embodiment of this disclosure is shown. It should be noted here that... Figure 11 The embodiments in the text follow the example. Figure 10 In the embodiments described herein, the component reference numerals and partial contents are used to indicate the same or similar components, and descriptions of the same technical content are omitted. Descriptions of the omitted portions can be found in the foregoing embodiments and will not be repeated here.
[0091] refer to Figure 11 In some embodiments, the heat dissipation component HDC4 is formed on the cover 70 and on the encapsulation components 31 and 32. In some embodiments, the heat dissipation component HDC4 includes a fin structure. The fin structure is made of anisotropic thermally conductive material 230C.
[0092] The anisotropic thermally conductive material 230C comprises a polymeric material 210C and a thermally conductive material 120C. The polymeric material 210C and the thermally conductive material 120C form an anisotropic thermally conductive structure through self-assembly. The anisotropic thermally conductive structure formed by the polymeric material 210C and the thermally conductive material 120C has similarities or identicalities to those described in previous chapters. Figure 2B and 2C The anisotropic thermally conductive structure ACS1 in Figure 4B and 4C The anisotropic thermally conductive structure ACS2 in Figure 7B and 7C The anisotropic thermally conductive structure ACS3 or Figure 6B and 6CThe structure and manufacturing method of the anisotropic thermally conductive structure in the heat dissipation assembly HDC4. In some embodiments, depending on the purpose, the anisotropic thermally conductive material 230C in the heat dissipation assembly HDC4 may be the same as or different from the anisotropic thermally conductive material 230A in the heat dissipation assembly HDC2.
[0093] Figure 12 This is a cross-sectional view showing a heat dissipation assembly HDC5 according to an embodiment of the present disclosure. Figure 12 The materials and manufacturing process of the heat dissipation component HDC5 can be compared with... Figure 8C Similar to the heat dissipation component HDC1, the difference is that at least some of the protruding structures 404 in the heat dissipation component HDC5 have curved sidewalls.
[0094] Figures 13A to 13D This is a cross-sectional view illustrating various stages of a method for manufacturing a heat dissipation assembly according to an embodiment of this disclosure. Figures 13A to 13D In the illustrated embodiment, template synthesis technology is used to determine the shape of the heat dissipation component.
[0095] exist Figure 13A and 13B In this process, polymeric material 210 and thermally conductive material 120 are mixed in solvent SL to obtain composite material 200. Polymeric material 210, thermally conductive material 120, and solvent SL are then filled into mold 600. More details about composite material 200 can be found above. Figures 4A to 4C The relevant paragraphs are found. In some embodiments, composite material 200 is used as an example, but this disclosure is not limited thereto. In alternative embodiments, composite material 100 (such as...) Figure 2A (as shown) or composite material 300 (such as) Figure 7A (As shown) can be filled into mold 600.
[0096] exist Figure 13C In the process, the solvent SL in the mold 600 evaporates. The polymer material 210 and the thermally conductive material 120 self-assemble to form an anisotropic thermally conductive material 230. The shape of the heat dissipation assembly HDC6 is defined by the mold 600 and includes the anisotropic thermally conductive material 230 having an anisotropic thermally conductive structure ACS2. In some embodiments, an annealing process is performed to enhance the stability of the heat dissipation assembly HDC6.
[0097] In some embodiments, a material containing solvent SL is applied to mold 600, but this disclosure is not limited thereto. In alternative embodiments, a dry film is first formed. That is, a dry film (e.g., Figure 2B Dry film DF1 in Figure 4B In the dry film DF2 or Figure 7BAfter drying the DF3 film, the dry film is broken up to obtain composite fragments. The composite fragments are then melted and filled into mold 600. The heat dissipation assembly HDC6 can be obtained by curing the composite fragments in mold 600.
[0098] refer to Figure 13D Pick up the heat dissipation component HDC6 from mold 600.
[0099] As semiconductor devices continue to evolve towards smaller sizes and enhanced performance, their temperatures are likely to rise. For example, thermal crosstalk becomes a more critical issue in complementary field-effect transistors (CFETs). In some embodiments, heat sink components have anisotropic thermally conductive materials, allowing them to dissipate heat in different directions. Therefore, semiconductor devices incorporating heat sink components can have improved reliability and lifespan. For instance, the heat sink component may include multiple protruding structures with higher thermal conductivity in the vertical direction than in the horizontal direction. This allows for more efficient heat dissipation and prevents heat buildup between the protruding structures. Furthermore, because anisotropic thermally conductive materials are flexible, they can be shaped as needed; in other words, the heat sink component can have the desired shape.
[0100] According to some embodiments, the heat dissipation assembly includes an anisotropic thermally conductive material. The anisotropic thermally conductive material includes a polymeric material and a thermally conductive material. A first portion of the polymeric material is bonded to the thermally conductive material to form a thermally conductive portion. A second portion of the polymeric material is not bonded to the thermally conductive material and forms a thermally insulating portion. The thermally conductive and thermally insulating portions are arranged alternately. In some embodiments, the polymeric material comprises a homopolymer. In some embodiments, the polymeric material comprises a copolymer, wherein a plurality of first portions of the polymeric material comprise a first structural unit of the copolymer, and a plurality of second portions of the polymeric material comprise a second structural unit of the copolymer. In some embodiments, the polymeric material comprises a polymer blend, wherein a plurality of first portions of the polymeric material comprise a first polymer of the polymer blend, and a plurality of second portions of the polymeric material comprise a second polymer of the polymer blend. As in some embodiments, the polymeric material comprises polyethylene, polyvinylidene fluoride, polylactic acid, polybutadiene, polycarbonate, polyolefin, polythiophene, poly(3-hexylthiophene), polyurethane, fluorene polyester, polyimide, or divinyltetramethyldisiloxane-bis(benzocyclobutene) or combinations thereof. In some embodiments, the thermally conductive material comprises copper, silver, graphene, silicon oxide, hexagonal boron nitride, silicon carbide, diamond, or a combination thereof. In some embodiments, a plurality of thermally conductive portions and a plurality of thermally insulating portions are arranged alternately in a horizontal direction.
[0101] According to some embodiments, a semiconductor device includes a die and a heat dissipation assembly. The heat dissipation assembly is disposed above the die. The heat dissipation assembly includes anisotropic thermally conductive material comprising alternating first and second layered portions. The thermal conductivity of the first layered portions is higher than that of the second layered portions. In some embodiments, the heat dissipation assembly is stacked on the die along a first direction, and a plurality of first and second layered portions are alternately arranged along a second direction substantially perpendicular to the first direction. In some embodiments, the heat dissipation assembly includes a plurality of protruding structures extending in different directions. In some embodiments, each of the plurality of protruding structures has a linear or curved sidewall. In some embodiments, the semiconductor device further includes an external assembly, wherein the heat dissipation assembly is disposed between the external assembly and the die, and the external assembly has a curved surface in direct contact with the plurality of protruding structures. In some embodiments, the heat dissipation assembly includes a plurality of fin structures extending along a direction substantially perpendicular to the surface of the die. In some embodiments, the heat dissipation assembly includes a heat sink.
[0102] According to some embodiments, a method for manufacturing a heat dissipation component includes the following steps: mixing a polymeric material and a thermally conductive material in a solvent to obtain a composite material; solution casting the composite material; during solvent evaporation, the polymeric material and the thermally conductive material self-assemble to form an anisotropic thermally conductive material having alternating thermally conductive and thermally insulating portions. In some embodiments, the method further includes: drying the composite material to obtain a dry film; breaking the dry film to obtain a plurality of composite fragments; heating the plurality of composite fragments to obtain a processed material; and shaping the processed material using a mold or 3D printing. In some embodiments, the polymeric material comprises a homopolymer, the thermally conductive material is bonded to a plurality of first portions of the homopolymer to form a plurality of thermally conductive portions, and a plurality of second portions of the homopolymer not bonded to the thermally conductive material form a plurality of thermally insulating portions. In some embodiments, the polymeric material comprises a copolymer, the copolymer comprising a first structural unit and a second structural unit, the thermally conductive material being bonded to the first structural unit to form a plurality of thermally conductive portions, and the second structural unit not bonded to the thermally conductive material forming a plurality of thermally insulating portions. In some embodiments, the polymeric material comprises a polymer blend, the thermally conductive material being bonded to a first polymer of the polymer blend, and the second polymer of the polymer blend not bonded to the thermally conductive material forming a plurality of thermally insulating portions. In some embodiments, the thermally conductive material comprises copper, silver, graphene, silicon oxide, hexagonal boron nitride, silicon carbide, diamond, or a combination thereof.
[0103] The foregoing outlines features of several embodiments to enable those skilled in the art to better understand various aspects of this disclosure. Those skilled in the art will understand that they can readily use this disclosure as a basis for designing or modifying other processes and structures to achieve the same purposes and / or benefits of the embodiments introduced herein. Those skilled in the art will also recognize that such equivalent constructions do not depart from the spirit and scope of this disclosure, and that various changes, substitutions, and modifications can be made herein without departing from the spirit and scope of this disclosure.
Claims
1. A semiconductor device, characterized in that, include: Core; as well as A heat dissipation assembly, located above the die, includes: Base; as well as A protruding structure is connected to and extends upward from the top surface of the base. The base and the protruding structure include an anisotropic thermally conductive structure comprising a polymeric material and a thermally conductive material. The anisotropic thermally conductive structure includes a plurality of first layered portions and a plurality of second layered portions arranged alternately in a horizontal direction parallel to the bottom surface of the heat dissipation assembly. The plurality of first layered portions and the plurality of second layered portions extend in a direction perpendicular to the bottom surface of the heat dissipation assembly. The plurality of first layered portions are composed of the thermally conductive material and the polymeric material, and the second layered portions are composed of the polymeric material. The plurality of first layered portions are thermally conductive portions, and the plurality of second layered portions are thermally insulating portions.
2. The semiconductor device of claim 1, wherein the plurality of protruding structures extend in different directions.
3. The semiconductor device of claim 2, further comprising an external component, wherein the heat dissipation component is disposed between the external component and the die, and the external component has a curved surface in direct contact with the plurality of protruding structures.
4. The semiconductor device of claim 1, wherein the plurality of protruding structures includes a sidewall perpendicular to the top surface of the base.