Furnace tube equipment

By setting up multiple wafer boats and reaction chambers in the furnace tube equipment, and optimizing the wafer processing flow using rotating platforms and isolation chambers, the problem of low processing efficiency of existing furnace tube equipment has been solved, achieving more efficient wafer production.

CN224266782UActive Publication Date: 2026-05-22ZHEJIANG ICSPROUT SEMICONDUCTOR CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
ZHEJIANG ICSPROUT SEMICONDUCTOR CO LTD
Filing Date
2025-04-30
Publication Date
2026-05-22

AI Technical Summary

Technical Problem

The processing efficiency of existing furnace tube equipment needs to be improved, especially the reduction in production efficiency caused by the wafer cooling process.

Method used

At least two crystal boats are set on the base of the furnace tube equipment, and a reaction chamber is set above each crystal boat. This allows one crystal boat to react in the reaction chamber while the other crystal boats pre-position or cool unreacted wafers. The positions of the crystal boats and reaction chambers are optimized by rotating the base and drive shaft, and the wafers are protected by the isolation chamber to avoid environmental pollution.

Benefits of technology

By optimizing the layout of the crystal boat and reaction chamber, processing time was shortened and production efficiency was improved. Furthermore, the wafer quality was protected by the isolation chamber, ensuring the accuracy and efficiency of the reaction process.

✦ Generated by Eureka AI based on patent content.

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Abstract

A furnace tube device comprises: a base comprising a first surface and a second surface opposite to each other; the base is connected to the first surface of the base table; the N crystal boats are fixedly arranged in the circumferential direction of the second face of the base table, N is a natural number larger than 1, and the crystal boats are suitable for containing wafers; and the reaction cavity is arranged above any one of the crystal boats, and in the reaction process of the reaction cavity, the reaction cavity is arranged on any one of the crystal boats in a sleeving manner. At least two crystal boats are arranged on a base station, a reaction cavity is arranged above the crystal boats, and the reaction cavity corresponds to any one of the crystal boats, that is, in the reaction process of any one of the crystal boats in the reaction cavity, the rest of the crystal boats are located outside the reaction cavity. Unreacted wafers can be placed in other crystal boats in advance, so that the processing time of the furnace tube equipment is shortened, and the production efficiency is further improved.
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Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing, and in particular to a furnace tube device. Background Technology

[0002] In the semiconductor chip manufacturing process, furnace tube equipment is an indispensable piece of equipment. For example, the diffusion process using furnace tubes is a basic process. In the diffusion process, many wafers are first placed on a crystal boat, and then the crystal boat is placed in the furnace tube for batch manufacturing. For semiconductor wafers, the quality and quantity of wafers manufactured by a single piece of equipment during the same period greatly affect the yield and manufacturing cost of semiconductor wafers.

[0003] However, the processing efficiency of current furnace tube equipment needs to be improved. Utility Model Content

[0004] The technical problem solved by this invention is how to improve the processing efficiency of furnace tube equipment.

[0005] To solve the above-mentioned technical problems, this utility model provides a furnace tube device, including: a base, the base including a first surface and a second surface opposite to each other; a base connected to the first surface of the base; N crystal boats, the N crystal boats being fixedly arranged circumferentially along the second surface of the base, where N is a natural number greater than 1, the crystal boats being suitable for accommodating wafers; and a reaction chamber, the reaction chamber being disposed above any of the crystal boats, and during the reaction process in the reaction chamber, the reaction chamber being fitted onto any of the crystal boats.

[0006] Optionally, the furnace tube device further includes an isolation chamber adapted to contain the reacted or unreacted crystal boat.

[0007] Optionally, the furnace tube equipment further includes: a temperature sensor for monitoring the temperature of the wafer in the crystal boat after the reaction; and an inlet / outlet on the isolation chamber adapted to remove the reacted wafer when the temperature of the wafer in the crystal boat after the reaction drops below a target threshold.

[0008] Optionally, the furnace tube device further includes a support cavity adapted to receive and hold the reaction-completed wafers taken out from the inlet / outlet.

[0009] Optionally, the base is a rotating base; the reaction chamber is fixedly disposed above any of the crystal boats; the base includes a first drive shaft, which is adapted to drive the rotating base and the crystal boat to rotate.

[0010] Optionally, the base is fixedly connected to the first surface of the platform, and the furnace tube device further includes a second drive shaft adapted to drive the reaction chamber to rotate.

[0011] Optionally, each of the crystal boat sidewall surfaces has a first slider, and the inner wall surface of the reaction chamber has a first sliding track. The first slider is engaged in the first sliding track and slides along the extension direction of the first sliding track.

[0012] Optionally, the inner wall surface of the reaction chamber has a second slider, and each of the crystal boat sidewall surfaces has a second sliding track. The second slider is engaged in the second sliding track and slides along the extension direction of the second sliding track.

[0013] Optionally, the reaction chamber may also have an air inlet channel, which is adapted to introduce the reaction gas into the reaction chamber.

[0014] Optionally, the number of crystal boats is 2 to 6.

[0015] Optionally, the furnace tube device further includes: a plurality of marking modules, the marking modules being adapted to mark the reaction state of the wafers in the crystal boat, the marking modules being fixed on the second surface of the base, and each marking module corresponding to the crystal boat.

[0016] Optionally, the furnace tube equipment further includes: the crystal boat is a vertical crystal boat, and the reaction chamber is a vertical reaction chamber.

[0017] Compared with the prior art, the technical solution of this utility model embodiment has the following beneficial effects:

[0018] This invention involves setting at least two crystal boats on a base platform and a reaction chamber above each crystal boat. The reaction chamber corresponds to any one of the crystal boats, meaning that while one crystal boat is reacting within the reaction chamber, the other crystal boats are located outside the reaction chamber. This allows unreacted wafers to be placed in the other crystal boats beforehand, shortening the processing time of the furnace tube equipment and thus improving production efficiency. Furthermore, during the cooling period after the reaction of any one crystal boat is completed within the reaction chamber, the reaction chamber can continue to react the wafers in the other crystal boats, thereby shortening the processing time of the furnace tube equipment and further improving production efficiency.

[0019] Furthermore, by setting up an isolation chamber, this utility model can isolate the reacted or unreacted crystal boat from the external environment, thereby protecting the wafers inside the reacted or unreacted crystal boat, preventing impurities in the environment from contaminating the wafers, ensuring the accuracy of the reaction process, improving processing efficiency, and thus ensuring the quality of the wafers. Attached Figure Description

[0020] Figure 1 This is a structural schematic diagram of a furnace tube device;

[0021] Figure 2 This is a three-dimensional structural diagram of a furnace tube device according to an embodiment of this utility model;

[0022] Figure 3 This is a top view of a furnace tube device according to an embodiment of the present invention;

[0023] Figure 4 This is a three-dimensional structural schematic diagram of another furnace tube device in this embodiment of the present invention;

[0024] Figure 5 This is a three-dimensional structural diagram of an isolation chamber in a furnace tube device according to an embodiment of this utility model;

[0025] Figure 6 This is a three-dimensional structural schematic diagram of another furnace tube device in this utility model embodiment;

[0026] Figure 7 This is a three-dimensional structural schematic diagram of another furnace tube device in this utility model embodiment. Detailed Implementation

[0027] It should be noted that the terms "surface" and "on" in this specification are used to describe the relative spatial position and are not limited to whether there is direct contact.

[0028] For the current structure of furnace tube equipment, please refer to... Figure 1 The furnace tube equipment includes: a crystal boat 100; and a reaction chamber 102, wherein the reaction chamber 102 is disposed above any of the crystal boats 100, and during the reaction process in the reaction chamber 102, the reaction chamber 102 is fitted onto any of the crystal boats 100.

[0029] The crystal boat 100 is adapted to accommodate the wafer 101.

[0030] In this embodiment, the furnace tube device further includes a support cavity 103, which is adapted to receive and support a reaction-completed wafer 101 taken out from the crystal boat 100 or to support a wafer 101 to be processed.

[0031] In this embodiment, the working principle of the furnace tube device is as follows: the wafer 101 to be processed in the carrier cavity 103 is transferred to the crystal boat 100, the crystal boat 100 rises to the reaction cavity 102, and a reaction gas is introduced into the reaction cavity 102. Through precise high-temperature environment and gas control, thin film growth is achieved on the wafer 101 to be processed. After processing, the crystal boat 100 is lowered. Due to the high temperature inside the reaction cavity 102, the crystal boat 100 needs to be cooled before it can be transferred to the carrier cavity 103.

[0032] In the above scheme, after the wafer 101 is grown using the furnace tube equipment, the crystal boat 100 used to hold the wafer 101 needs to be cooled before the wafer 101 that has completed the reaction can be transferred to the carrier cavity 103. The cooling process takes 0.5 hours to 1 hour. However, the reaction cavity 102 is idle during the cooling process, which leads to a reduction in production efficiency.

[0033] To address the aforementioned technical problems, this utility model provides a furnace tube device. By arranging at least two crystal boats on a base and a reaction chamber above each crystal boat, the reaction chamber corresponds to any one of the crystal boats. That is, while one crystal boat is reacting within the reaction chamber, the other crystal boats are located outside the reaction chamber. This allows unreacted wafers to be placed in the remaining crystal boats beforehand, shortening the processing time of the furnace tube device and thus improving production efficiency. Furthermore, during the cooling period after the reaction of any one crystal boat is completed within the reaction chamber, the reaction chamber can continue to react the wafers in the remaining crystal boats, further shortening the processing time of the furnace tube device and improving production efficiency.

[0034] To make the above-mentioned objectives, features and beneficial effects of this utility model more apparent and understandable, the specific embodiments of this utility model will be described in detail below with reference to the accompanying drawings.

[0035] Please refer to Figure 2 as well as Figure 3 , Figure 2 This is a three-dimensional schematic diagram of the furnace tube equipment. Figure 3This is a top view of the furnace tube equipment, which includes: a base 203, the base 203 having a first surface a and a second surface b facing each other; a base 202, the base 202 being connected to the first surface a of the base 203; N crystal boats 200, the N crystal boats 200 being fixedly arranged circumferentially along the second surface b of the base 203, where N is a natural number greater than 1, the crystal boats 200 being adapted to accommodate wafers 2001; and a reaction chamber 201, the reaction chamber 201 being disposed above any of the crystal boats 200, and during the reaction process in the reaction chamber 201, the reaction chamber 201 being fitted onto any of the crystal boats 200.

[0036] The crystal boat 200 is a vertical crystal boat 200, and the reaction chamber 201 is a vertical reaction chamber 201.

[0037] In some embodiments of this utility model, the base 203 is a rotating base 203; the reaction chamber 201 is fixedly disposed above any of the crystal boats 200; the base 202 includes a first drive shaft (not shown in the figure), which is adapted to drive the rotating base 203 and the crystal boats 200 to rotate.

[0038] In some embodiments of this utility model, each of the crystal boats 200 has a first sliding member 205 on its side wall surface, and the inner wall surface of the reaction chamber 201 has a first sliding track 204. The first sliding member 205 is engaged in the first sliding track 204, and the first sliding member 205 slides along the extension direction of the first sliding track 204.

[0039] In a specific embodiment of this utility model, the base 203 has a first crystal boat A, a second crystal boat B, a third crystal boat C, a fourth crystal boat D, a fifth crystal boat E, and a sixth crystal boat F. Specifically, the working process of the furnace tube equipment is as follows: the wafer 2001 to be processed in the carrier cavity is transferred to the first crystal boat A. The first crystal boat A rises into the reaction chamber 201, and a reaction gas is introduced into the reaction chamber 201. Through precise high-temperature environment and gas control, thin film growth is achieved on the wafer 2001 to be processed. After processing is completed, the first crystal boat A is lowered to wait for the wafer 2001 in the first crystal boat A to cool down. During the cooling process... The first drive shaft (not shown in the figure) controls the base 203 to rotate until the second crystal boat B is rotated under the reaction chamber 201. The wafer 2001 to be processed in the carrier chamber is transferred to the second crystal boat B. The second crystal boat B rises into the reaction chamber 201, and a reaction gas is introduced into the reaction chamber 201. Through precise high-temperature environment and gas control, thin film growth is achieved on the wafer 2001 to be processed. After processing is completed, the second crystal boat B is lowered to wait for the wafer 2001 in the second crystal boat B to cool down. The above steps are repeated until there are wafers 2001 to be cooled in the first crystal boat A to the sixth crystal boat F.

[0040] The direction in which the first crystal boat A to the sixth crystal boat F rises or falls is perpendicular to the surface of the base 203.

[0041] In other embodiments of this invention, the bottom surface of the crystal boat also has a telescopic support, which is adapted to control the raising or lowering of the crystal boat.

[0042] In some embodiments of this utility model, the number of crystal boats 200 is 2 to 6.

[0043] In some embodiments of this utility model, the reaction chamber 201 is further provided with an air inlet channel 206, which is adapted to introduce the reaction gas into the reaction chamber 201.

[0044] In some embodiments of this utility model, the base 203 further includes a plurality of marking modules 207, which are adapted to mark the reaction state of the wafer 2001 in the crystal boat 200. The marking modules 207 are fixed on the second surface b of the base 203, and each marking module 207 corresponds one-to-one with the crystal boat 200, so as to realize the accurate judgment of the reaction status of the wafer 2001 in the crystal boat 200, thereby improving the processing efficiency.

[0045] In the above scheme, by setting at least two crystal boats 200 on the base 203 and setting a reaction chamber 201 above the crystal boats 200, the reaction chamber 201 corresponds to any one of the crystal boats 200. That is, while any one of the crystal boats 200 is reacting in the reaction chamber 201, the other crystal boats 200 are located outside the reaction chamber 201. Unreacted wafers 2001 can be placed in the other crystal boats 200 in advance, shortening the processing time of the furnace tube equipment and thus improving production efficiency. In addition, during the cooling time after any one of the crystal boats 200 has completed its reaction in the reaction chamber 201, the reaction chamber 201 can continue to react the wafers 2001 in the other crystal boats 200, thereby shortening the processing time of the furnace tube equipment and thus improving production efficiency.

[0046] Please Figure 2 Based on reference Figure 4 The furnace tube equipment further includes: N-1 isolation chambers 208, the isolation chambers 208 being adapted to contain the reacted crystal boat 200 or the unreacted crystal boat 200.

[0047] In this embodiment, there are six crystal boats 200 and five isolation chambers 208.

[0048] In other embodiments, the number of crystal boats is two, and the number of isolation chambers is one.

[0049] In some embodiments of this utility model, the furnace tube device further includes: a temperature sensor 210, which is used to monitor the temperature of the wafer 2001 in the crystal boat 200 after the reaction; the isolation chamber 208 has an inlet / outlet 209, which is adapted to remove the wafer 2001 after the reaction is completed when the temperature of the wafer 2001 in the crystal boat 200 after the reaction drops below a target threshold.

[0050] In some embodiments of the present invention, the furnace tube device further includes a support cavity 211, which is adapted to receive and support the reaction-completed wafer 2001 taken out from the inlet / outlet 209.

[0051] In a specific embodiment of this utility model, when the temperature sensor 210 detects that the temperature of the wafer 2001 in the crystal boat 200 drops below the target threshold, the inlet / outlet 209 is opened, and subsequently the wafer 2001 in the crystal boat 200 is transferred to the carrier cavity 211 by a robotic arm.

[0052] In other embodiments of this utility model, the isolation chamber has a telescopic door. When the base is rotating, the telescopic door of the isolation chamber opens so that the reacted wafer boat can enter the isolation chamber. After the wafer boat enters the isolation chamber, the telescopic door of the isolation chamber closes so that the isolation chamber is a closed cavity to prevent impurities in the environment from contaminating the wafer.

[0053] In other embodiments of this invention, the isolation chamber also includes a condensation device to accelerate the cooling of the wafers inside the crystal boat.

[0054] In one embodiment, the condensation device is a condensation flow channel.

[0055] In the above scheme, by setting up an isolation chamber 208, the isolation chamber 208 can isolate the reacted or unreacted crystal boat 200 from the external environment, thereby protecting the wafer 2001 in the reacted or unreacted crystal boat 2001, preventing impurities in the environment from contaminating the wafer 2001, ensuring the accuracy of the reaction process, improving processing efficiency, and thus ensuring the quality of the wafer 2001.

[0056] Please refer to Figure 5 , Figure 5 This is a three-dimensional structural diagram of the isolation chamber 308 in another embodiment. The isolation chamber 308 is disposed on the base platform, and the top of the isolation chamber 308 has an opening 3081. The shape of the opening 3081 matches the shape of any of the crystal boats so that the crystal boat can move up or down through the opening 3081.

[0057] The isolation chamber 308 is shaped like a box lid.

[0058] In some embodiments of this utility model, the isolation chamber 308 has an inlet / outlet 3082, which is adapted to remove the wafer after the reaction is completed when the temperature of the wafer in the crystal boat drops below the target threshold, or to place the wafer to be processed into the crystal boat in the isolation chamber 308 before the reaction.

[0059] In the above scheme, there is one isolation chamber 308, and the opening 3081 on the isolation chamber 308 can enable the crystal boat to rise into the reaction chamber for reaction. While ensuring the reaction, it can also prevent impurities in the environment from contaminating the wafer, ensuring the accuracy of the reaction process, improving the processing efficiency, and thus ensuring the quality of the wafer.

[0060] Please refer to Figure 6The furnace tube equipment includes: a base 403, which includes a first surface a and a second surface b facing each other; a base 402, which is connected to the first surface a of the base 403; N crystal boats 400, which are fixedly arranged circumferentially along the second surface b of the base 403, where N is a natural number greater than 1, and the crystal boats 400 are adapted to accommodate wafers 4001; and a reaction chamber 401, which is disposed above any of the crystal boats 400, and during the reaction process in the reaction chamber 401, the reaction chamber 401 is fitted onto any of the crystal boats 400.

[0061] In some embodiments of this utility model, the base 402 is fixedly connected to the first surface a of the base 403, and the furnace tube device further includes a second drive shaft 408, which is adapted to drive the reaction chamber 401 to rotate.

[0062] The furnace tube equipment further includes a rotating base 407, which is located on the reaction chamber 401 and the reaction chamber 401 is disposed on the first surface c of the rotating base 407, and the second drive shaft 408 is fixed on the second surface d of the rotating base 407.

[0063] In a specific embodiment, the second drive shaft 408 drives the rotating base 407 to rotate, thereby causing the reaction chamber 401 to rotate.

[0064] In some embodiments of this utility model, the inner wall surface of the reaction chamber 401 has a second slider 404, and the side wall surface of each crystal boat 400 has a second sliding track 405. The second slider 404 is engaged in the second sliding track 405, and the second slider 404 slides along the extension direction of the second sliding track 405.

[0065] In some embodiments of this utility model, the top surface of the reaction chamber 401 is further provided with a telescopic bracket, which is adapted to control the rise or fall of the reaction chamber 401.

[0066] In a specific embodiment of this utility model, the base 403 has a first crystal boat A, a second crystal boat B, a third crystal boat C, a fourth crystal boat (not shown in the figure), a fifth crystal boat (not shown in the figure), and a sixth crystal boat (not shown in the figure). Specifically, the working process of the furnace tube equipment is as follows: the wafer 4001 to be processed in the carrying cavity is transferred to the first crystal boat A; the second drive shaft 408 is controlled to rotate the rotating base 407 so that the reaction chamber 401 rotates onto the first crystal boat 400; the reaction chamber 401 descends to cover the first crystal boat A; a reaction gas is introduced into the reaction chamber 401; and through precise high-temperature environment and gas control, thin film growth is achieved on the wafer 4001 to be processed; and after processing, the wafer 4001 is removed from the reaction chamber 401. The process begins by raising the reaction chamber 401 and waiting for the wafer 4001 in the first crystal boat A to cool down. During this cooling process, the second drive shaft 408 controls the rotating base 407 to rotate until the reaction chamber 401 is rotated onto the second crystal boat B. The wafer 4001 to be processed in the carrier cavity is then transferred to the second crystal boat B. The reaction chamber 401 then lowers to cover the second crystal boat B, and a reaction gas is introduced into the reaction chamber 401. Through precise high-temperature environment and gas control, thin film growth is achieved on the wafer 4001 to be processed. After processing is completed, the reaction chamber 401 is raised again, and the wafer 4001 in the second crystal boat B is allowed to cool down. This process is repeated until there are wafers 4001 to be cooled in the first crystal boat A to the sixth crystal boat (not shown in the figure).

[0067] The direction in which the reaction chamber 401 rises or falls is perpendicular to the surface of the base 403.

[0068] In some embodiments of this utility model, the reaction chamber 401 is further provided with an air inlet channel 406, which is adapted to introduce the reaction gas into the reaction chamber 401.

[0069] Please refer to Figure 7 The furnace tube equipment further includes: N-1 isolation chambers 409, the isolation chambers 409 being adapted to contain the reacted crystal boat 400 or the unreacted crystal boat 400.

[0070] The isolation chamber 409 is disposed on the first surface c of the rotating base 407.

[0071] In a specific embodiment, the second drive shaft 408 drives the rotating base 407 to rotate, thereby causing the isolation chamber 409 to rotate.

[0072] In this embodiment, there are six crystal boats 400 and five isolation chambers 409.

[0073] In other embodiments, the number of crystal boats is two, and the number of isolation chambers is one.

[0074] In some embodiments of this utility model, the furnace tube device further includes: a temperature sensor 410, which is used to monitor the temperature of the wafer 4001 in the crystal boat 400 after the reaction; the isolation chamber 409 has an inlet / outlet 4091, which is adapted to remove the wafer 4001 after the reaction is completed when the temperature of the wafer 4001 in the crystal boat 400 after the reaction drops below the target threshold.

[0075] In some embodiments of the present invention, the furnace tube device further includes a support cavity adapted to receive and support the reaction-completed wafer 4001 taken out from the inlet / outlet 4091.

[0076] In some embodiments of this utility model, the furnace tube device further includes: a support cavity (not shown in the figure), the support cavity being adapted to receive and support the reaction-completed wafer 4001 taken out from the inlet / outlet 4091.

[0077] In the above scheme, by setting at least two crystal boats 400 on the base 403 and setting a reaction chamber 401 above the crystal boats 400, the reaction chamber 401 corresponds to any one of the crystal boats 400. That is, while any one of the crystal boats 400 is reacting in the reaction chamber 401, the other crystal boats 400 are located outside the reaction chamber 401. Unreacted wafers 4001 can be placed in the other crystal boats 400 in advance, shortening the processing time of the furnace tube equipment and thus improving production efficiency. In addition, during the cooling time after any one of the crystal boats 400 has completed its reaction in the reaction chamber 401, the reaction chamber 401 can continue to react the wafers 4001 in the other crystal boats 400, thereby shortening the processing time of the furnace tube equipment and thus improving production efficiency.

[0078] In other embodiments of this invention, the isolation chamber also includes a condensation device to accelerate the cooling of the wafers inside the crystal boat.

[0079] In one embodiment, the condensation device is a condensation flow channel.

[0080] In some embodiments of this utility model, the inner wall surface of the isolation chamber 409 has a third slide member 412, and the side wall surface of each crystal boat 400 also has a third sliding track 411. The third slide member 412 is engaged in the third sliding track 411, and the third slide member 412 slides along the extension direction of the third sliding track 411.

[0081] In some embodiments of this utility model, the top surface of the isolation chamber 409 is further provided with a telescopic bracket, which is adapted to control the raising or lowering of the isolation chamber 409.

[0082] In the above scheme, by setting up an isolation chamber 409, the isolation chamber 409 can isolate the reacted or unreacted crystal boat 400 from the external environment, thereby protecting the wafer 4001 in the reacted or unreacted crystal boat 4001, preventing impurities in the environment from contaminating the wafer 4001, ensuring the accuracy of the reaction process, improving processing efficiency, and thus ensuring the quality of the wafer 4001.

[0083] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the present invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A furnace tube device, characterized in that, include: A base, the base including opposing first and second surfaces; A base, the base being connected to the first surface of the base platform; N crystal boats are fixedly arranged circumferentially along the second surface of the base, where N is a natural number greater than 1, and the crystal boats are suitable for accommodating wafers; A reaction chamber is disposed above any of the crystal boats, and during the reaction process in the reaction chamber, the reaction chamber is fitted onto any of the crystal boats.

2. The furnace tube equipment as described in claim 1, characterized in that, Also includes: An isolation chamber, the isolation chamber being adapted to contain the reacted or unreacted crystal boat.

3. The furnace tube equipment as described in claim 2, characterized in that, Also includes: A temperature sensor is provided to monitor the temperature of the wafer inside the crystal boat after the reaction; the isolation chamber has an inlet / outlet, which is adapted to remove the wafer after the reaction is completed when the temperature of the wafer inside the crystal boat drops below a target threshold.

4. The furnace tube equipment as described in claim 3, characterized in that, Also includes: A carrier cavity adapted to receive and carry a reaction-completed wafer taken from the inlet / outlet.

5. The furnace tube equipment as described in claim 1, characterized in that, The base is a rotating base; the reaction chamber is fixedly disposed above any of the crystal boats; the base includes a first drive shaft, which is adapted to drive the rotating base and the crystal boat to rotate.

6. The furnace tube equipment as described in claim 1, characterized in that, The base is fixedly connected to the first surface of the platform, and the furnace tube device further includes a second drive shaft, which is adapted to drive the reaction chamber to rotate.

7. The furnace tube equipment as described in claim 1, characterized in that, Each of the crystal boats has a first sliding member on its sidewall surface, and the inner wall surface of the reaction chamber has a first sliding track. The first sliding member is engaged in the first sliding track and slides along the extension direction of the first sliding track.

8. The furnace tube equipment as described in claim 1, characterized in that, The inner wall surface of the reaction chamber has a second slider, and the side wall surface of each crystal boat has a second sliding track. The second slider is engaged in the second sliding track and slides along the extension direction of the second sliding track.

9. The furnace tube equipment as described in claim 1, characterized in that, The reaction chamber also has an air inlet channel, which is adapted to introduce the reaction gas into the reaction chamber.

10. The furnace tube equipment as described in claim 1, characterized in that, The number of crystal boats is 2 to 6.

11. The furnace tube equipment as described in claim 1, characterized in that, Also includes: Several marking modules are provided, each marking module being adapted to mark the reaction state of the wafer inside the crystal boat. The marking modules are fixed on the second surface of the base, and each marking module corresponds one-to-one with the crystal boat.

12. The furnace tube equipment as described in claim 1, characterized in that, Also includes: The crystal boat is a vertical crystal boat, and the reaction chamber is a vertical reaction chamber.