Wafer grinding platform and wafer processing equipment

Abstract

This application discloses a wafer polishing platform and wafer processing equipment, relating to the field of semiconductor equipment technology. The wafer polishing platform includes a machine base and a first and second rotary arms movably mounted on the machine base. The machine base carries a wafer. The first rotary arm is equipped with a grooving assembly. The first rotary arm is driven to rotate above the wafer, and the grooving assembly is used to groove the surface of the wafer. The second rotary arm is equipped with a polishing assembly. The second rotary arm is driven to rotate above the wafer, and the polishing assembly is used to polish the surface of the wafer. This wafer polishing platform can solve the problem of wafer microcracks caused by warpage before polishing and the inability to release stress in a timely manner during polishing in existing CMP processes.

Description

Technical Field

[0001] This application relates to the field of semiconductor equipment technology, and more specifically, to a wafer grinding platform and wafer processing equipment. Background Technology

[0002] With the rapid development of the semiconductor industry, the importance of Chemical Mechanical Polishing (CMP) in wafer packaging is becoming increasingly prominent. CMP achieves surface planarization by using the synergistic effect of chemical reagents and polishing pad particles to create a relative rotational motion between the wafer surface and the polishing pad. If warping exists before polishing, it will lead to uneven vacuum adsorption. Furthermore, if stress cannot be released in time during polishing, microcracks may occur in the wafer. Utility Model Content

[0003] The purpose of this application is to provide a wafer grinding platform and wafer processing equipment that can solve the problem of wafer microcracks caused by warping before wafer grinding and the inability to release stress in time during grinding in the existing CMP process.

[0004] The embodiments of this application are implemented as follows:

[0005] A first aspect of this application provides a wafer polishing platform, including a machine base and a first and second rotary arms movably disposed on the machine base. The machine base is used to carry a wafer. A grooving assembly is disposed on the first rotary arm. The first rotary arm is driven to rotate above the wafer, and the grooving assembly is used to groove the surface of the wafer. A polishing assembly is disposed on the second rotary arm. The second rotary arm is driven to rotate above the wafer, and the polishing assembly is used to polish the surface of the wafer. This wafer polishing platform can solve the problem of wafer microcracks caused by wafer warpage before polishing and the inability to release stress in time during polishing in existing CMP processes.

[0006] As one possible implementation, it further includes a first rotary drive component, the fixed end of which is fixedly disposed on the machine base, and the output end of which is drivenly connected to the first rotary arm. The first rotary drive component drives the first rotary arm to rotate, thereby driving the grooving assembly to rotate synchronously. It also includes a second rotary drive component, the fixed end of which is fixedly disposed on the machine base, and the output end of which is drivenly connected to the second rotary arm. The second rotary drive component drives the second rotary arm to rotate, thereby driving the grinding assembly to rotate synchronously.

[0007] In one possible implementation, the grooving assembly moves relative to the wafer along a vertical direction perpendicular to the wafer surface, pressing the wafer surface to groove the wafer surface, and the polishing assembly moves relative to the wafer, pressing the wafer surface to polish the wafer surface.

[0008] As one possible implementation, it further includes a first connecting seat and a first lifting drive component. The output end of the first rotary drive component is fixedly connected to the first connecting seat, the fixed end of the first lifting drive component is fixedly disposed on the first connecting seat, and the output end of the first lifting drive component is connected to the first rotary arm. The first lifting drive component drives the first rotary arm to move, thereby driving the grooving assembly to move synchronously. It also includes a second connecting seat and a second lifting drive component. The output end of the second rotary drive component is fixedly connected to the second connecting seat, the fixed end of the second lifting drive component is fixedly disposed on the second connecting seat, and the output end of the second lifting drive component is connected to the second rotary arm. The second lifting drive component drives the second rotary arm to move, thereby driving the grinding assembly to move synchronously.

[0009] In one possible implementation, the grooving assembly includes a first driver and a grinding wheel. A guide rail is provided on the first rotating arm, and the grinding wheel is rotatably disposed within the guide rail. The first driver is connected to the grinding wheel and is used to drive the grinding wheel to move along the guide rail to groove the wafer surface.

[0010] In one possible implementation, the polishing assembly includes a second driver and a polishing disk, the polishing disk being rotatably mounted on a second rotating arm, and the second driver being connected to the polishing disk for driving the polishing disk to move relative to the wafer surface to polish the wafer surface.

[0011] As one possible implementation, the first rotary arm and the second rotary arm are respectively disposed on opposite sides of the machine platform along the platform direction.

[0012] In one possible implementation, the machine includes a support platform and mounting platforms spaced around the support platform. The wafer is placed on the support platform, and the first and second rotating arms are mounted on the mounting platforms. A collection groove is formed between the support platform and the mounting platforms to collect particles generated during grooving and grinding of the wafer.

[0013] As one possible implementation, the bottom of the collection tank is provided with a drain outlet, which is used to discharge the grinding liquid and particles inside the collection tank.

[0014] A second aspect of this application provides a wafer processing apparatus, including the aforementioned wafer grinding platform. This wafer grinding platform can solve the problem of wafer microcracks caused by warpage before grinding and the inability to release stress in a timely manner during grinding in existing CMP processes.

[0015] The beneficial effects of the embodiments of this application include:

[0016] The wafer polishing platform includes a base and a first and second rotary arms movably mounted on the base. The base supports the wafer. A grooving assembly is mounted on the first rotary arm. The first rotary arm rotates above the wafer, and the grooving assembly grooves the wafer surface. A polishing assembly is mounted on the second rotary arm. The second rotary arm rotates above the wafer, and the polishing assembly polishes the wafer surface. The wafer polishing platform provided in this application pre-creates grooves on the wafer surface using the grooving assembly of the first rotary arm, dispersing large-area warping stress into multiple groove areas. The grooves formed on the wafer surface by the grooving assembly of the first rotary arm act as "stress relief channels." When polishing stress is generated, the elastic deformation of the grooves absorbs some of the stress, thereby preventing stress accumulation inside the wafer. For example, when the polishing pad applies pressure to the wafer surface, the material at the edge of the groove can deform slightly, converting concentrated stress into dispersed deformation energy, significantly reducing the risk of microcracks. Attached Figure Description

[0017] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is one of the structural schematic diagrams of the wafer polishing platform provided in the embodiments of this application;

[0019] Figure 2 This is a second schematic diagram of the structure of the wafer polishing platform provided in the embodiments of this application;

[0020] Figure 3 This is the third schematic diagram of the structure of the wafer polishing platform provided in the embodiments of this application.

[0021] Icons: 100-Wafer grinding platform; 10-Machinery; 11-Support platform; 12-Mounting platform; 13-Collection tank; 131-Drain outlet; 20-First rotating arm; 21-Guide rail; 22-Grinding wheel; 30-Second rotating arm; 31-Grinding disc; 200-Wafer. Detailed Implementation

[0022] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations. It should be noted that similar reference numerals and letters in the following drawings denote similar items; therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0023] In the description of this application, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product is in use. These terms are used only for the convenience of describing this application and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application. Furthermore, the terms "horizontal," "vertical," etc., do not indicate that the component must be absolutely horizontal or suspended, but can be slightly tilted. The terms "first," "second," and "third," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0024] In the description of this application, it should also be noted that, unless otherwise expressly specified and limited, the terms "set up," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to a connection within two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0025] Please refer to the reference. Figures 1 to 3 This application provides a wafer polishing platform 100, including a machine base 10 and a first rotary arm 20 and a second rotary arm 30 movably disposed on the machine base 10. The machine base 10 is used to support a wafer 200. A grooving assembly is disposed on the first rotary arm 20. The first rotary arm 20 is driven to rotate above the wafer 200, and the grooving assembly is used to groove the surface of the wafer 200. A polishing assembly is disposed on the second rotary arm 30. The second rotary arm 30 is driven to rotate above the wafer 200, and the polishing assembly is used to polish the surface of the wafer 200. This wafer polishing platform 100 can solve the problem of microcracks in the wafer 200 caused by warping of the wafer 200 before polishing and the inability to release stress in time during polishing in existing CMP processes.

[0026] It should be noted that the wafer polishing platform 100 includes a base 10, a first rotary arm 20, and a second rotary arm 30. The base 10 is used to stably support the wafer 200, providing a reference plane for subsequent processing. The first rotary arm 20 is movable on the base 10 and is equipped with a grooving assembly. When the first rotary arm 20 is driven to rotate above the wafer 200, the grooving assembly performs grooving operations on the surface of the wafer 200. The direction, depth, and width of these grooves can be designed according to process requirements. The second rotary arm 30 is movable on the base 10 and is equipped with a polishing assembly. When the second rotary arm 30 is driven to rotate above the wafer 200, the polishing assembly can polish the surface of the wafer 200 through the synergistic action of the polishing pad and polishing fluid. The entire wafer polishing platform 100 breaks away from the single process of traditional CMP by performing a grooving-then-polishing process, structurally solving the problems of wafer 200 warpage and stress release.

[0027] Traditional CMP processes directly grind warped wafers 200. However, the uneven surface of wafer 200 easily leads to uneven grinding pressure, exacerbating warping and even causing breakage. To address this issue, the wafer grinding platform 100 provided in this application pre-creates grooves on the surface of wafer 200 using the grooving assembly of the first rotary arm 20. This disperses large-area warping stress across multiple groove areas. For example, after grooving at the edges or stress concentration areas of wafer 200, the elastic deformation of the warped portion is reduced due to structural segmentation, making wafer 200 closer to a flat state before grinding. This provides a more uniform reference surface for subsequent grinding by the grinding assembly of the second rotary arm 30.

[0028] In traditional CMP processes, mechanical friction generates stress within the wafer 200 during the polishing process. If this stress cannot be released, it can accumulate and form microcracks. To address this issue, the wafer polishing platform 100 provided in this application utilizes a grooved component of the first rotating arm 20 to form channels on the surface of the wafer 200, which act as "stress relief channels." When polishing stress is generated, the elastic deformation of the channels can absorb some of the stress, thereby preventing stress accumulation within the wafer 200. For example, when the polishing pad applies pressure to the surface of the wafer 200, the material at the edge of the channels can slightly deform, converting concentrated stress into dispersed deformation energy, significantly reducing the risk of microcracks.

[0029] After grooving by the grooving assembly of the first rotary arm 20, the stress distribution on the surface of the wafer 200 is more uniform. Combined with the rotary polishing assembly of the second rotary arm 30, the polishing pressure can be evenly applied to all areas of the wafer 200. For example, when the polishing pad contacts the grooved surface of the wafer 200, the planar areas between each groove are subjected to consistent force, avoiding local over-polishing or under-polishing caused by warping. This allows the thickness deviation (TTV) and surface roughness (Ra) of the wafer 200 surface to be controlled within a more precise range, thereby improving the yield of the wafer 200.

[0030] The direction (or distribution), depth, and width of the grooves formed on the surface of wafer 200 by the grooving assembly can be flexibly adjusted according to the material (such as silicon, silicon carbide, sapphire, etc.) and thickness of wafer 200. For example, for high-hardness silicon carbide wafers 200, deeper grooves can be created to enhance stress release; for thin wafers 200, a shallow groove design can be used to avoid structural damage. This flexibility in groove design allows the wafer polishing platform 100 to be applicable to various wafer 200 polishing needs in semiconductor, optoelectronics, and other fields, expanding its process applicability.

[0031] Traditional CMP processes suffer from high defect rates due to microcracks on wafers around 200mm. This wafer polishing platform 100 reduces the scrap rate through pre-treatment with grooving. Simultaneously, the pressure and time required for polishing wafers around 200mm after grooving can be appropriately reduced, decreasing polishing pad wear and energy consumption. For example, in a certain 8-inch silicon wafer 200mm polishing process, using this wafer polishing platform 100 can improve yield by 15%, increase polishing efficiency by 20%, and significantly reduce costs.

[0032] In one possible implementation, the wafer polishing platform 100 further includes a first rotary drive component. The fixed end of the first rotary drive component is fixedly mounted on the machine base 10, and the output end of the first rotary drive component is connected to the first rotary arm 20 via a transmission connection. The first rotary drive component drives the first rotary arm 20 to rotate, thereby driving the grooving assembly to rotate synchronously. Similarly, the wafer polishing platform 100 also includes a second rotary drive component. The fixed end of the second rotary drive component is fixedly mounted on the machine base 10, and the output end of the second rotary drive component is connected to the second rotary arm 30 via a transmission connection. The second rotary drive component drives the second rotary arm 30 to rotate, thereby driving the polishing assembly to rotate synchronously.

[0033] It should be noted that the wafer polishing platform 100 is also equipped with a first rotary drive and a second rotary drive (not shown in the figure), which are used to drive the first rotary arm 20 and the second rotary arm 30 to rotate, respectively. The fixed end of the first rotary drive is securely mounted on the machine base 10, and its output end is connected to the first rotary arm 20 via a transmission structure such as gears, belts, or couplings. When the first rotary drive is activated, the rotational power at its output end is transmitted to the first rotary arm 20, causing the first rotary arm 20 to rotate around a fixed fulcrum on the machine base 10, thereby driving the grooving assembly on the first rotary arm 20 to rotate synchronously to a designated position above the wafer 200. Similarly, the fixed end of the second rotary drive is also fixedly mounted on the machine base 10, and its output end is connected to the second rotary arm 30 via a transmission connection. When the second rotary drive is activated, it can drive the second rotary arm 30 to rotate the polishing assembly to a designated position above the wafer 200, realizing the position switching between the working components of the grooving process and the polishing process. With the above design, the two rotary arms can be controlled separately and operate collaboratively through independent drive structures.

[0034] Traditional manual switching of grinding tools requires machine downtime, which is time-consuming. To solve this problem, the wafer grinding platform 100 of this application can complete the switching of the rotating arms in a short time through a rotary drive, realizing the automated connection between the grooving process and the grinding process. For example, after the grooving process is completed, the first rotary drive drives the first rotating arm 20 to rotate and exit above the wafer 200, while the second rotary drive immediately drives the second rotating arm 30 to cut in, forming a production line operation, which greatly improves production efficiency and is suitable for mass production scenarios.

[0035] As one possible implementation method, such as Figure 1 and Figure 2 As shown, along a vertical direction perpendicular to the surface of wafer 200, the grooving assembly moves relative to wafer 200 and presses the surface of wafer 200 to groove the surface of wafer 200, and the polishing assembly moves relative to wafer 200 and presses the surface of wafer 200 to polish the surface of wafer 200.

[0036] It should be noted that the grooving assembly can be equipped with a cutting tool (such as a diamond cutting tool). Through vertical downward pressure, the tool contacts the surface of wafer 200 with a set pressure and moves along a preset trajectory (such as a ring or a straight line), thereby cutting grooves of specific depth and width on the surface of wafer 200. For example, in semiconductor packaging processes, stress relief grooves with a depth of 50μm and a width of 100μm need to be formed on the back side of wafer 200. The polishing assembly, through vertical downward pressure, makes the polishing pad (such as polyurethane material) adhere tightly to the surface of wafer 200. At the same time, with the assistance of polishing slurry (such as silica suspension), mechanical friction removes the surface material of wafer 200, achieving surface smoothing. For example, in integrated circuit manufacturing, the surface roughness of wafer 200 needs to be reduced from an initial Ra50nm to below Ra0.5nm.

[0037] In one possible implementation, the wafer polishing platform 100 further includes a first connecting seat and a first lifting drive. The output end of the first rotary drive is fixedly connected to the first connecting seat, the fixed end of the first lifting drive is fixedly disposed on the first connecting seat, and the output end of the first lifting drive is connected to the first rotary arm 20. The first lifting drive drives the first rotary arm 20 to move, thereby driving the grooving assembly to move synchronously. Similarly, the wafer polishing platform 100 also includes a second connecting seat and a second lifting drive. The output end of the second rotary drive is fixedly connected to the second connecting seat, the fixed end of the second lifting drive is fixedly disposed on the second connecting seat, and the output end of the second lifting drive is connected to the second rotary arm 30. The second lifting drive drives the second rotary arm 30 to move, thereby driving the polishing assembly to move synchronously.

[0038] It should be noted that the wafer polishing platform 100 incorporates a first connecting seat, a first lifting drive component, a second connecting seat, and a second lifting drive component in its drive structure, forming a composite motion control system of "rotation and lifting." The output end of the first rotary drive component (e.g., a motor) is fixed to the first connecting seat. When the first rotary drive component rotates, the first connecting seat rotates accordingly, becoming the fulcrum for the rotation of the first rotary arm 20. The first lifting drive component (e.g., a cylinder, an electric push rod) is fixed to the first connecting seat, and its output end is connected to the first rotary arm 20, driving the first rotary arm 20 to move vertically up and down, thereby moving the grooving assembly closer to or away from the surface of the wafer 200. Similarly, the second rotary drive component is connected to the second lifting drive component via the second connecting seat, allowing the second rotary arm 30 to control the contact pressure and distance between the polishing assembly and the surface of the wafer 200 after rotating above the wafer 200 through the lifting action of the second lifting drive component. This design decomposes the angle positioning of the rotary arm and the vertical pressure control, achieving more precise motion control.

[0039] The lifting function of the rotary arm allows the component to be raised to a safe height when not in operation, avoiding collisions with the wafer 200 or the machine 10. For example, after the grooving process is completed, the first lifting drive drives the first rotary arm 20 to rise a certain safe distance (e.g., 20mm), and then the first rotation drive rotates it out of the wafer 200. The whole process is free from interference risk and can reduce the equipment failure rate.

[0040] As one possible implementation method, such as Figures 1 to 3 As shown, the grooving assembly includes a first driver and a grinding wheel 22. A guide rail 21 is provided on the first rotating arm 20, and the grinding wheel 22 is rotatably disposed in the guide rail 21. The first driver is connected to the grinding wheel 22 and is used to drive the grinding wheel 22 to move along the guide rail 21 to groove the surface of the wafer 200.

[0041] It should be noted that the grooving assembly adopts a combined structure of "first driver, grinding wheel 22, and guide rail 21". The guide rail 21 is fixed on the first rotating arm 20, providing a movement path for the grinding wheel 22. It is usually designed as a straight line or a specific curved shape (such as an arc) to meet different grooving trajectory requirements. The grinding wheel 22 (such as a diamond grinding wheel) can be mounted on a slider, which cooperates with the guide rail 21 to achieve rolling motion. The first driver (such as a servo motor and ball screw or linear motor) is connected to the grinding wheel 22. By driving the slider to move along the guide rail 21, the grinding wheel 22 contacts the surface of the wafer 200 at a set speed and pressure. The high-speed rotation of the grinding wheel forms grooves on the surface of the wafer 200.

[0042] As one possible implementation method, such as Figures 1 to 3As shown, the polishing assembly includes a second driver and a polishing disk 31. The polishing disk 31 is rotatably mounted on the second rotating arm 30. The second driver is connected to the polishing disk 31 and is used to drive the polishing disk 31 to move relative to the surface of the wafer 200 in order to polish the surface of the wafer 200.

[0043] It should be noted that the polishing assembly adopts a structural design of "second driver and polishing disc 31". The polishing disc 31 is mounted on the second rotating arm 30 via bearings or a rotating mechanism and can rotate freely around its own axis. The second driver (such as a servo motor or frequency converter motor) is connected to the polishing disc 31 via transmission (such as through a belt, gear, or direct drive) to provide rotational power to the polishing disc 31. When the second rotating arm 30 is pressed down onto the surface of the wafer 200 by the second lifting drive, the second driver is activated, driving the polishing disc 31 to rotate at a set speed (such as 30-300 rpm). At the same time, the surface of the polishing disc 31 is usually covered with a polishing pad (such as polyurethane or non-woven fabric), and with the spraying of polishing fluid (such as an alkaline solution containing silica particles), the relative movement between the polishing disc 31 and the surface of the wafer 200 achieves material removal and polishing of the surface of the wafer 200.

[0044] As one possible implementation method, such as Figure 1 and Figure 3 As shown, along the table surface direction of the machine platform 10, the first rotating arm 20 and the second rotating arm 30 are respectively arranged on opposite sides of the machine platform 10.

[0045] It should be noted that, on the table surface of the machine tool 10, the first rotary arm 20 and the second rotary arm 30 are respectively installed on opposite sides of the machine tool 10 (such as the left and right sides, front and rear ends), forming a symmetrical or opposing layout. This layout allows the grooving assembly and the grinding assembly to be spatially independent, avoiding interference during operation. When the first rotary arm 20 drives the grooving assembly to perform grooving operations on the wafer 200 on one side of the machine tool 10, the second rotary arm 30 can be in a standby state on the other side of the machine tool 10; after the grooving process is completed, the first rotary arm 20 rotates out, and the second rotary arm 30 rotates from the other side to above the wafer 200 to start the grinding process. This spatial distribution design makes full use of the operating space around the machine tool 10, achieving efficient connection between different processes.

[0046] As one possible implementation method, such as 1 to Figure 3 As shown, the machine 10 includes a support platform 11 and mounting platforms 12 spaced around the support platform 11. A wafer 200 is placed on the support platform 11, and a first rotating arm 20 and a second rotating arm 30 are mounted on the mounting platform 12. A collection groove 13 is formed between the support platform 11 and the mounting platform 12 to collect particles generated during grooving and grinding of the wafer 200. As one possible implementation, such as... Figure 3As shown, a drain outlet 131 is provided at the bottom of the collection tank 13, which is used to discharge the grinding liquid and particles inside the collection tank 13.

[0047] It should be noted that the machine tool 10 adopts a composite structure design of "support platform 11, mounting platform 12, and collection tank 13". The support platform 11 is located in the center of the machine tool 10 and is used to support the wafer 200. Its surface is usually made of flat ceramic or quartz material to ensure the flatness of the wafer 200. The mounting platform 12 is arranged around the support platform 11 at intervals (such as in a ring distribution). The first rotating arm 20 and the second rotating arm 30 are respectively fixed on the mounting platform 12, forming an enclosing layout of the support platform 11. The gap between the support platform 11 and the mounting platform 12 forms the collection tank 13, whose cross-sectional shape can be trapezoidal or U-shaped. The bottom of the collection tank 13 is provided with a drain outlet 131. When the grooving assembly and the grinding assembly process the wafer 200, the generated impurities such as silicon chips, grinding fluid, and diamond particles will fall into the collection tank 13 and be discharged through the pipeline system at the bottom of the tank to avoid the accumulation of impurities affecting the processing accuracy.

[0048] This application also provides a wafer 200 processing apparatus, including the wafer polishing platform 100 described above. Since the structure and beneficial effects of the wafer polishing platform 100 have been described in detail in the foregoing embodiments, they will not be repeated here.

[0049] The above description is merely an optional embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

[0050] It should also be noted that the various specific technical features described in the above embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, this application will not describe the various possible combinations separately.

Claims

1. A wafer grinding platform, characterized in that, The device includes a machine base and a first and a second rotating arm movably mounted on the machine base. The machine base is used to carry a wafer. The first rotating arm is provided with a grooving assembly. The first rotating arm is driven to rotate above the wafer. The grooving assembly is used to groove the surface of the wafer. The second rotating arm is provided with a grinding assembly. The second rotating arm is driven to rotate above the wafer. The grinding assembly is used to grind the surface of the wafer.

2. The wafer grinding platform according to claim 1, characterized in that, It also includes a first rotary drive component, the fixed end of which is fixedly mounted on the machine base, and the output end of which is connected to the first rotary arm via a transmission. The first rotary drive component drives the first rotary arm to rotate, thereby causing the grooving assembly to rotate synchronously. It also includes a second rotary drive component, the fixed end of which is fixedly mounted on the machine base, and the output end of which is connected to the second rotary arm via a transmission. The second rotary drive component drives the second rotary arm to rotate, thereby driving the grinding assembly to rotate synchronously.

3. The wafer grinding platform according to claim 2, characterized in that, Along a vertical direction perpendicular to the wafer surface, the grooving assembly moves relative to the wafer, pressing the wafer surface to groove the wafer surface, and the polishing assembly moves relative to the wafer, pressing the wafer surface to polish the wafer surface.

4. The wafer grinding platform according to claim 3, characterized in that, It also includes a first connecting seat and a first lifting drive component. The output end of the first rotating drive component is fixedly connected to the first connecting seat, the fixed end of the first lifting drive component is fixedly disposed on the first connecting seat, and the output end of the first lifting drive component is connected to the first rotating arm. The first lifting drive component drives the first rotating arm to move, so as to drive the slotting assembly to move synchronously. It also includes a second connecting seat and a second lifting drive component. The output end of the second rotating drive component is fixedly connected to the second connecting seat, the fixed end of the second lifting drive component is fixedly disposed on the second connecting seat, and the output end of the second lifting drive component is connected to the second rotating arm. The second lifting drive component drives the second rotating arm to move, so as to drive the grinding assembly to move synchronously.

5. The wafer grinding platform according to claim 1, characterized in that, The grooving assembly includes a first driver and a grinding wheel. A guide rail is provided on the first rotating arm, and the grinding wheel is rotatably disposed within the guide rail. The first driver is connected to the grinding wheel and is used to drive the grinding wheel to move along the guide rail to groove the wafer surface.

6. The wafer grinding platform according to claim 1, characterized in that, The grinding assembly includes a second driver and a grinding disk. The grinding disk is rotatably mounted on the second rotating arm. The second driver is connected to the grinding disk and is used to drive the grinding disk to move relative to the wafer surface in order to grind the wafer surface.

7. The wafer grinding platform according to claim 1, characterized in that, Along the table surface direction of the machine tool, the first rotating arm and the second rotating arm are respectively disposed on opposite sides of the machine tool.

8. The wafer grinding platform according to claim 1, characterized in that, The machine includes a support platform and mounting platforms spaced around the support platform. The wafer is placed on the support platform, and the first and second rotating arms are mounted on the mounting platforms. A collection groove is formed between the support platform and the mounting platforms to collect particles generated during grooving and grinding of the wafer.

9. The wafer grinding platform according to claim 8, characterized in that, The bottom of the collection tank is provided with a drain outlet, which is used to discharge the grinding liquid and particles inside the collection tank.

10. A wafer processing equipment, characterized in that, Includes the wafer grinding platform as described in any one of claims 1 to 9.

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