A gas flow equalization device
By designing a gas flow equalization device, the problem of uneven gas distribution in PVD equipment is solved, and the process gas is uniformly distributed in the PVD reaction chamber, which improves the coating quality and process stability and is suitable for PVD processes with different process requirements.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- JIANGYIN NANOPORE INNOVATIVE MATERIALS TECH LTD
- Filing Date
- 2025-06-03
- Publication Date
- 2026-05-26
AI Technical Summary
In existing physical vapor deposition (PVD) equipment, process gases enter the vacuum reaction chamber through a single point or a limited inlet, resulting in uneven gas distribution and affecting the unstable coating quality.
A gas flow equalization device was designed, including a gas splitting mechanism and a flow equalization mechanism. Through the combination of the splitting component and the flow equalization head, the process gas is evenly split and evenly distributed, ensuring the uniform distribution of gas in the PVD reaction chamber.
It significantly improves the thickness uniformity and composition consistency of deposited films, enhances product quality, and has a simple structure that is easy to install and maintain, with good versatility and cost-effectiveness.
Smart Images

Figure CN224280442U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of physical vapor deposition technology, and in particular to a gas flow equalization device. Background Technology
[0002] Physical vapor deposition (PVD) is a surface treatment technology widely used in semiconductors, optical coatings, tool coatings, and decorative coatings. During PVD, the uniform distribution of process gases (such as argon, nitrogen, and oxygen) has a decisive influence on the deposition rate, compositional uniformity, structural density, and adhesion of the thin film. However, in existing PVD equipment, process gases are typically introduced directly into the PVD vacuum reaction chamber through a single point or a limited number of inlets. This gas introduction method results in uneven gas distribution, leading to unstable coating quality. Utility Model Content
[0003] In view of the problem of uneven distribution of process gas in the PVD vacuum reaction chamber in the above or existing technologies, this utility model is proposed.
[0004] Therefore, the purpose of this invention is to provide a gas flow equalization device.
[0005] To solve the above-mentioned technical problems, this utility model provides the following technical solution: a gas diversion mechanism, the gas diversion mechanism including a diversion component, the diversion component being a disc-shaped hollow shell, one end of which is connected to an MFC gas supply system, and the other end being provided with a plurality of gas diversion ports; and a flow equalization mechanism, the flow equalization mechanism including a flow equalization head, the flow equalization head being a shell structure with openings at the top and bottom, one end of which is connected to the gas diversion port, and the other end being provided with a flow equalization plate, the flow equalization plate having air holes, the air holes being able to uniformly discharge process gas.
[0006] As a preferred embodiment of the gas equalization device of this utility model, the middle part of the bottom surface of the flow dividing component is recessed, the recessed surface forms a flow dividing plate, the bottom surface is circumferentially convex, and a flow dividing groove is provided in the circumferential part of the bottom surface.
[0007] In a preferred embodiment of the gas equalization device of this utility model, the gas diversion ports are equally spaced on the bottom surface of the diversion groove.
[0008] As a preferred embodiment of the gas equalization device of this utility model, the gas diversion mechanism further includes a gas transmission pipe, one end of which is sealed and connected to the gas diversion port.
[0009] As a preferred embodiment of the gas equalization device of this utility model, the cross-section of one side of the equalization head is arranged in an isosceles triangle, and the cross-section perpendicular to the isosceles triangle is arranged in a conical shape.
[0010] In a preferred embodiment of the gas equalization device of this utility model, the vertex of the isosceles triangle of the equalization head is sealed to the end of the gas transmission pipe away from the gas diversion port, and a connecting plate is provided at the opening of the base of the isosceles triangle of the equalization head extending circumferentially.
[0011] As a preferred embodiment of the gas equalization device of this utility model, the connecting plate has connecting holes at both ends and an installation groove is provided on the bottom surface of the connecting plate along the circumferential direction.
[0012] In a preferred embodiment of the gas equalization device of this utility model, the equalization plate is arranged in a narrow and elongated shape, which is suitable for matching the bottom surface of the equalization head.
[0013] As a preferred embodiment of the gas equalization device of this utility model, the equalization plate has mounting holes at both ends, and the mounting holes are adapted to the connection holes.
[0014] In a preferred embodiment of the gas flow equalization device of this utility model, the air holes are equally spaced along the length direction of the flow equalization plate.
[0015] The beneficial effects of this gas equalization device are as follows: By setting up a gas splitting mechanism and a flow equalization mechanism, this device enables the process gas to be uniformly distributed within the PVD reaction chamber, significantly improving the thickness uniformity and compositional consistency of the deposited film, thereby enhancing product quality. The circular structure of the splitting component can uniformly divide the internal gas flow into multiple paths, achieving multi-point output of the process gas; the gas transmission pipe uses a vacuum bellows to ensure that the entire device is leak-free in a high-vacuum environment; the flow equalization head transforms the process gas output shape from a circular structure to a uniform linear structure, improving the uniform diffusion efficiency of the process gas within the PVD reaction chamber.
[0016] Furthermore, this device has a simple structure, is easy to install and maintain, and has low cost, making it highly practical and worthy of widespread application. It can adapt to different types of process gases and PVD processes with varying process requirements, demonstrating strong versatility. Attached Figure Description
[0017] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0018] Figure 1 This is a schematic diagram of the gas flow equalization device.
[0019] Figure 2 This is a cross-sectional view of the flow divider component.
[0020] Figure 3 This is a schematic diagram of the flow divider component.
[0021] Figure 4 This is a cross-sectional view of the flow equalizer head.
[0022] Figure 5 This is a side view of the flow equalizer head.
[0023] Figure 6 This is a schematic diagram of the flow uniform plate. Detailed Implementation
[0024] To enable those skilled in the art to better understand this utility model, the present utility model will be further described in detail below with reference to specific embodiments and accompanying drawings.
[0025] The terminology used in this invention refers to those general terms currently widely used in the art in consideration of the functionality of this invention; however, these terms may vary according to the intent, precedent, or new technology of those skilled in the art. Furthermore, specific terms may be chosen by the applicant, and in such cases, their detailed meanings will be described in the detailed description of this invention. Therefore, the terminology used in this specification should not be construed as simple names, but rather based on the meaning of the terms and the overall description of this invention.
[0026] Reference Figure 1 This embodiment provides a gas flow equalization device, including a gas splitting mechanism 100 and a flow equalization mechanism 200. The gas splitting mechanism 100 buffers and splits the process gas input from the MFC gas supply system into the flow equalization mechanism 200. The flow equalization mechanism 200 then evens out the split process gas and introduces it into the PVD equipment. The MFC gas supply system is a high-precision gas flow control and measurement system widely used in semiconductor manufacturing, bio-fermentation, hydrogen fuel cells, chemical engineering, environmental monitoring, and other fields. This system ensures the stability and repeatability of the process by precisely adjusting the gas flow rate.
[0027] As an optional embodiment, refer to Figure 1 The gas diversion mechanism 100 includes a diversion component 101, which is a disc-shaped hollow shell. One end of the diversion component 101 is machined with an air inlet 106, which is located in the middle of one end of the diversion component 101. An O-ring bracket is installed on the air inlet 106. After an O-ring is installed on the O-ring bracket, it is connected to the MFC gas supply system through a KF chuck. The other end of the diversion component 101 is provided with a plurality of gas diversion ports 103 at equal intervals. An O-ring bracket is installed on the diversion port 103. After an O-ring is installed on the O-ring bracket, it is connected to a gas transmission pipe 102 through a KF chuck.
[0028] In this embodiment, the gas transmission pipe 102 is preferably a vacuum bellows pipe.
[0029] The flow equalization mechanism 200 includes a flow equalization head 201, which is a shell structure with openings at the top and bottom. One end is connected to the gas transmission pipe 102, and the other end is provided with a flow equalization plate 202. The gas transmitted by the gas transmission pipe 102 enters the flow equalization head 201 for buffering and changes the gas distribution state.
[0030] As an optional embodiment, refer to Figure 2 and Figure 3 The bottom middle part of the diversion component 101 is recessed, and the concave surface forms a circular diversion plate 104. The bottom circumferential part is raised, and a diversion groove 105 is formed in the bottom circumferential protrusion. The gas diversion port 103 is opened on the bottom surface of the diversion groove 105.
[0031] It should be noted that the gas diversion ports 103 are evenly distributed on the bottom surface of the diversion tank 105, so that the process gas first settles in the diversion tank 105, and the diversion tank 105 obtains a uniform gas pressure, thus ensuring the uniformity of the process gas pressure output from the diversion port 13.
[0032] When the process gas input from the MFC gas supply system enters the diversion component 101, the process gas is first blocked by the diversion plate 104, and then overflows and sinks into the diversion trough 105 along the diversion plate 104. After being blocked by the diversion plate 104, the process gas can be evenly dispersed and sinks into the diversion trough 105, and then overflows through the diversion port 13, dividing the gas evenly into several groups.
[0033] The arrangement of the disc-shaped flow divider 101, the circular flow divider plate 104, and the circumferential flow divider groove 105 facilitates the process gas entering the flow divider 101 to be evenly dispersed into the flow divider groove 105 within the same time, and ensures that the pressure in each part of the flow divider groove 105 is balanced.
[0034] The reason is that when the process gas enters the disc-shaped flow divider 101 from the inlet 106, it is guided by the radial structure of the disc and diffuses radially outward. Due to the symmetry of the disc, the flow resistance of the process gas in the circumferential direction is uniform, avoiding local velocity differences. The circular flow divider 104 forcibly disperses the process gas into multiple radial channels, further balancing the distribution of process gas in each direction. The annular design of the flow divider 105 forms a continuous "gas accumulator chamber." When the process gas flows in the flow divider, the velocity and pressure are converted into each other, ensuring that the process gas pressure entering each gas flow divider 103 is uniform.
[0035] As an optional embodiment, refer to Figure 4 and Figure 5The flow equalizer 201 has an isosceles triangle cross-section on one side, with the vertex angle of the isosceles triangle ranging from 100 to 120 degrees, so that the process gas diffuses along the shape of the flow equalizer 201 after entering the flow equalizer 201.
[0036] The isosceles triangle of the flow equalizer 201 has a gas inlet at the vertex. An O-ring bracket is installed on the gas inlet. After the O-ring is installed on the O-ring bracket, it is connected to the gas transmission pipe 102 through a KF chuck.
[0037] A connecting plate 203 is provided on the circumferential side of the isosceles triangle base of the flow equalizer 201. The bottom surface of the connecting plate 203 is provided with a mounting groove 204 in the circumferential direction. The mounting groove 204 is used to install the O-ring.
[0038] As an optional embodiment, refer to Figure 6 The flow equalization plate 202 is a long and narrow plate that fits the bottom surface of the flow equalization head 201. Mounting holes 207 are provided at both ends of the flow equalization plate 202. These mounting holes 207 align with the connecting holes 205 at both ends of the connecting plate 203. The flow equalization head 201 and the flow equalization plate 202 are then fixedly connected using bolts. Simultaneously, an O-ring installed in the mounting groove 204 is clamped between the flow equalization head 201 and the flow equalization plate 202, forming a seal between them.
[0039] Furthermore, the flow equalizer 202 has vent holes 206 evenly spaced along its length, which discharge the process gas in the flow equalizer 201 into the PVD reaction chamber.
[0040] The process gas has a circular cross-section when it passes through the gas transmission pipe 102. When it diffuses to the end of the isosceles triangle with the base of the flow equalizer 201, the cross-section becomes a narrow strip. After being discharged through the flow equalizer 202 with equidistant vents 206 along the length direction, the process gas changes from a column of gas in the gas transmission pipe 102 to a gas surface discharged from the vents 206. The gas surface discharged from the vents 206 is more conducive to the diffusion of the process gas in the PVD reaction chamber.
[0041] When process gas is introduced into the PVD reaction chamber, the flow rate of the process gas is precisely controlled by the MFC gas supply system and enters the diversion component 101. The process gas is then uniformly deposited into the diversion trough 105 by the diversion plate 104 set in the diversion component 101, and then uniformly diverted to the gas transmission pipe 102 by the gas diversion ports 103 set at equal intervals on the diversion trough 105. This realizes the diversion of process gas from the MFC gas supply system to the PVD reaction chamber, that is, multi-point conduction between the MFC gas supply system and the PVD reaction chamber.
[0042] The process gas enters the flow equalizer head 201 from the gas transmission pipe 102. The gas inlet at the vertex of the isosceles triangle of the flow equalizer head 201 is circular, and the process gas is shaped into a column after flowing through it. Since the side of the flow equalizer head 201 perpendicular to the isosceles triangle section, i.e., the side view section, is conical, it can be known that the bottom opening width of the flow equalizer head 201 is smaller than the inner diameter of the gas inlet of the flow equalizer head 201, and the bottom opening of the flow equalizer head 201 is a narrow strip.
[0043] The shape of the flow equalizer 201 is designed so that the process gas gradually diffuses after entering the flow equalizer 201 and is confined at the bottom, forming a long strip shape. From the cross-section of the process gas flow direction, the cross-section changes from a circle when it first enters to a long strip shape.
[0044] A flow equalization plate 202 is installed on the bottom opening of the flow equalization head 201. The flow equalization plate 202 has air holes 206 at equal intervals. When the process gas passes through the air holes 206 continuously, a process gas surface is formed. After the process gas passes through the flow equalization mechanism 200, it is uniformly flowed from a gas column to a gas surface, which is beneficial to the diffusion and distribution of the process gas in the PVD reaction chamber.
[0045] It should be noted that the internal shape of the flow equalizer 201 is designed so that the process gas is shaped before being output. The gas pressure at the outlet 206 on the flow equalizer 202 is kept balanced. Even if the outlet 206 on the flow equalizer 202 is blocked, the gas pressure will be evenly distributed to the other outlets 206, and no pressure difference will be caused, resulting in uneven process gas output.
[0046] This invention utilizes gas diversion ports 103 evenly distributed on the circular surface of the diversion component 101 to uniformly divide the incoming air into two or more streams. This uniform distribution ensures that the process gas enters the gas transmission pipe 102 evenly.
[0047] It should be noted that the gas transmission tube 102 used has the same length, shape, and diameter.
[0048] The diameter and number of vents 206 on the flow equalizer 202 are calculated and set according to the gas type, flow rate, and desired flow equalization effect. The gas enters the reaction chamber through the micropores on the flow equalizer, achieving uniform distribution.
[0049] Installation process of this device: First, connect the gas distribution mechanism 100 to the gas supply source of the PVD equipment, ensuring a tight connection and no gas leakage. Then, fix the flow equalization mechanism 200 in a suitable position, aligning the flow equalization plate with the air inlet of the PVD reaction chamber and securing it.
[0050] The parameter adjustment method for this device is as follows: Adjust parameters such as the diameter of the gas inlet pipe, the inclination angle of the inner wall of the flow equalizer 201, the number of flow equalizers 201, and the diameter and number of micro-holes on the flow equalizer plate, according to the type of gas used, the MFC flow rate, and the PVD process requirements. For example, for gases with a large flow rate, appropriately increase the diameter of the gas inlet pipe; for processes requiring high flow equalization, decrease the diameter of the micro-holes on the flow equalizer plate and increase the number of micro-holes.
[0051] The operation of this device is as follows: Start the PVD equipment and MFC gas supply system. Gas is input into the gas distribution mechanism 100 through the MFC gas supply system, where it undergoes initial homogenization. Then, it is transmitted through the gas transmission pipe 102 to the flow equalization head 201. The flow equalization head 201 transforms the gas from a circular shape to a linear shape, and the micropores on the flow equalization plate ensure that the process gas enters the PVD reaction chamber uniformly for the PVD deposition process. During operation, the operating effect of this device can be evaluated and adjusted by monitoring parameters such as gas concentration and pressure within the PVD reaction chamber.
[0052] Finally, it should be noted that the methods and devices described in detail above are merely embodiments, and those skilled in the art can modify these embodiments in different ways as long as they do not depart from the scope of this utility model.
Claims
1. A gas flow equalization device, characterized in that: include, A gas diversion mechanism (100) includes a diversion component (101), which is a hollow shell with one end connected to an MFC gas supply system and the other end having a plurality of gas diversion ports (103); and, A flow equalization mechanism (200) includes a flow equalization head (201), which is a shell structure with openings at the top and bottom. One end is connected to the gas diversion port (103), and the other end is provided with a flow equalization plate (202). The flow equalization plate (202) is provided with a plurality of air holes (206), which can uniformly discharge the process gas.
2. The gas flow equalization device as described in claim 1, characterized in that: The diversion component (101) is arranged in a disc shape, with the middle part of its bottom surface being concave and the concave surface forming a diversion plate (104). The bottom surface is circumferentially convex, and a diversion groove (105) is provided in the circumferential part of the bottom surface.
3. The gas flow equalization device as described in claim 2, characterized in that: The gas diversion ports (103) are equally spaced on the bottom surface of the diversion groove (105).
4. The gas flow equalization device according to any one of claims 1 to 3, characterized in that: The gas diversion mechanism (100) further includes a gas transmission pipe (102), one end of which is sealed and connected to the gas diversion port (103).
5. The gas flow equalization device as described in claim 4, characterized in that: The flow equalizer (201) has an isosceles triangle cross-section on one side and a tapered cross-section perpendicular to the isosceles triangle.
6. The gas flow equalization device as described in claim 5, characterized in that: The vertex of the isosceles triangle of the flow equalizer (201) is sealed to the end of the gas transmission pipe (102) away from the gas diversion port (103), and a connecting plate (203) is provided at the opening of the base of the isosceles triangle of the flow equalizer (201) extending circumferentially.
7. The gas flow equalization device as described in claim 6, characterized in that: The connecting plate (203) has connecting holes (205) at both ends, and the bottom surface of the connecting plate (203) has a mounting groove (204) along the circumferential direction.
8. The gas flow equalization device as described in claim 7, characterized in that: The flow equalization plate (202) is arranged in a narrow and elongated plate shape, which is suitable for matching the bottom surface of the flow equalization head (201).
9. The gas flow equalization device as described in claim 8, characterized in that: The flow equalization plate (202) has mounting holes (207) at both ends, and the mounting holes (207) are adapted to the connecting holes (205).
10. The gas flow equalization device as described in claim 8 or 9, characterized in that: The air holes (206) are equally spaced along the length of the flow equalizer (202).