PECVD-magnetron sputtering co-deposition doped film layer device

Abstract

According to the PECVD-magnetron sputtering co-deposition doped film layer device provided by the utility model, other oxides, metals or semiconductors are doped into a substrate deposition film through magnetron sputtering in the PECVD process, and the deposition speed of magnetron sputtering can be controlled through the sputtering adjusting mechanism. A chemical vapor deposition mechanism and a magnetron sputtering mechanism are arranged in a containing cavity of the device, in the process that PECVD is conducted on a target substrate of a substrate connecting component through the chemical vapor deposition mechanism, co-deposition can be conducted on the surface of the target substrate through the magnetron sputtering mechanism, so that a thin film formed by PECVD can be subjected to doping modification through magnetron sputtering, the sputtering adjusting mechanism is arranged between the magnetron sputtering mechanism and the substrate connecting component, so that the sputtering rate of the magnetron sputtering mechanism can be accurately controlled, and the deposition uniformity of the magnetron sputtering mechanism can be improved.

Description

Technical Field

[0001] This utility model relates to the field of vacuum deposition coating technology, and in particular to a PECVD-magnetron sputtering co-deposition device for doped films. Background Technology

[0002] PECVD (Plasma Enhanced Chemical Vapor Deposition) and magnetron sputtering are both commonly used techniques in deposition coating. In existing technologies, co-deposition equipment for achieving co-deposition coating using PECVD and magnetron sputtering generally falls into two categories. One approach involves placing the magnetron sputtering and PECVD devices separately within a vacuum reaction chamber, but during operation, they are still used as two separate devices sequentially, resulting in separate deposition coatings. The two devices are not truly integrated, and co-deposition coating cannot be achieved. The other approach integrates the PECVD and magnetron sputtering devices into a single unit, enabling co-deposition coating. However, the plasma generated by the two systems can interfere with each other after startup, leading to unstable film quality.

[0003] Furthermore, in existing magnetron sputtering technology, there is a lack of precise control methods for target materials with high sputtering rates, making it difficult to regulate the atomic content of the target material in the deposited thin film, resulting in unstable sputtering rates and deposition uniformity in magnetron sputtering. Utility Model Content

[0004] In view of the above problems, this utility model proposes a PECVD-magnetron sputtering co-deposition doped film device. This device can achieve co-deposition coating based on the integrated magnetron sputtering device and PECVD device. The magnetron sputtering system and PECVD system are independent of each other, thereby reducing the mutual influence of the plasma generated at the same time. In addition, the magnetron sputtering system also has a device that can precisely control the sputtering rate of the target material.

[0005] The device is equipped with a substrate connection component for fixing the substrate to be deposited, and the PECVD-magnetron sputtering co-deposition doped film device includes:

[0006] The housing has a cavity, which also has a gas supply mechanism for introducing the reaction gas, and the base connection component is located inside the cavity.

[0007] A chemical vapor deposition apparatus is at least partially housed in a cavity and is used to ionize the reactive gas within the cavity so that the plasma clusters generated by the ionization are deposited onto the target surface of the substrate to be deposited, thereby forming a thin film on the target surface.

[0008] A magnetron sputtering mechanism, at least partially housed in a cavity, is used to deliver target atoms to the target surface of the substrate to be deposited;

[0009] The sputtering adjustment mechanism is located between the magnetron sputtering mechanism and the substrate connection component, and is used to adjust the flow rate of target atoms output by the magnetron sputtering mechanism to the target surface.

[0010] In one embodiment, the PECVD-magnetron sputtering co-deposition doped film device has a switchable first operating mode and a second operating mode, wherein, in the first operating mode, one of the chemical vapor deposition mechanism and the magnetron sputtering mechanism operates, and when the magnetron sputtering mechanism is operating, the flow rate of target atoms output by the magnetron sputtering mechanism to the target surface can be adjusted by the sputtering adjustment mechanism.

[0011] In the second operating mode, both the chemical vapor deposition mechanism and the magnetron sputtering mechanism are in operation, and the flow rate of target atoms output by the magnetron sputtering mechanism to the target surface can be adjusted by the sputtering adjustment mechanism.

[0012] In one embodiment, the magnetron sputtering mechanism includes at least a first magnetron sputtering component and a second magnetron sputtering component. The first magnetron sputtering component is used to output target atoms to a first region of the target surface of the substrate to be deposited, and the second magnetron sputtering component is used to output target atoms to a second region of the target surface of the substrate to be deposited. The first region and the second region at least partially overlap.

[0013] The sputtering adjustment mechanism is set to correspond to the target magnetron sputtering assembly and is used to adjust the flow rate of target atoms output by the target magnetron sputtering assembly to the target surface of the substrate to be deposited. The target magnetron sputtering assembly includes at least one of a first magnetron sputtering assembly and a second magnetron sputtering assembly.

[0014] The first magnetron sputtering component and the second magnetron sputtering component are configured to output different target atoms to the target surface of the substrate to be deposited, or the first magnetron sputtering component and the second magnetron sputtering component are configured to output the same target atoms to the target surface of the substrate to be deposited.

[0015] In one embodiment, the gas supply mechanism includes a first gas supply component, which is provided with at least two first gas supply ports, and the first magnetron sputtering component and the second magnetron sputtering component each correspond to at least one first gas supply port.

[0016] And / or, the gas supply mechanism includes a second gas supply component, which is disposed in the chemical vapor deposition mechanism, wherein the second gas supply component is provided with a plurality of second gas supply ports, which are located inside the chemical vapor deposition mechanism and are spaced apart and arranged around the periphery of the substrate to be deposited.

[0017] In one embodiment, a chemical vapor deposition mechanism is disposed around the periphery of a substrate connecting member, and the substrate connecting member is rotatable relative to the chemical vapor deposition mechanism, and the substrate connecting member is provided with a heating element.

[0018] The PECVD-magnetron sputtering co-deposition doped film device is further provided with a first driving mechanism, which is used to drive at least one of the substrate connection component and the chemical vapor deposition mechanism to move, so as to adjust the spacing between the substrate connection component and the magnetron sputtering mechanism.

[0019] In one embodiment, the sputtering adjustment mechanism includes a first adjustment component, which includes a connector, a first baffle, and a first driving component;

[0020] The first baffle is disposed between the magnetron sputtering mechanism and the substrate connecting component, and is rotatably connected to the connector, and a through hole is formed on the first baffle;

[0021] The first driving component is connected to the first baffle and is used to drive the first baffle to rotate and adjust the rotation speed of the first baffle.

[0022] The rotational speed of the first baffle is negatively correlated with the flow rate of target atoms output to the target surface by the magnetron sputtering mechanism.

[0023] In one embodiment, the first adjustment component further includes a second driving component connected to the connector, which is used to drive the connector to move relative to the magnetron sputtering mechanism so that the first baffle moves closer to or further away from the magnetron sputtering mechanism.

[0024] In one embodiment, a plurality of through holes are spaced apart on the first baffle, and a first gear portion is provided on the periphery of the first baffle. The first driving component meshes with the first gear portion to adjust the rotation speed of the first baffle.

[0025] The first baffle and the magnetron sputtering mechanism have a first gap L, which satisfies that 2≤L≤8cm.

[0026] In one embodiment, the sputtering adjustment mechanism further includes a second adjustment component, wherein the second adjustment component includes a second baffle and a second driving component. The second baffle is disposed between the first adjustment component and the magnetron sputtering mechanism, and the second driving component is used to drive the second baffle to move so that the second baffle rotates relative to the magnetron sputtering mechanism to a first position or a second position.

[0027] The area where the magnetron sputtering mechanism outputs target atoms forms a magnetron sputtering surface. When the second baffle rotates relative to the magnetron sputtering mechanism to the first position, the second baffle forms a first projection in the direction perpendicular to the magnetron sputtering surface.

[0028] When the second baffle is rotated to the second position relative to the magnetron sputtering mechanism, the second baffle forms a second projection in the direction perpendicular to the magnetron sputtering surface;

[0029] The area covered by the first projection on the magnetron sputtering surface is larger than the area covered by the second projection on the magnetron sputtering surface.

[0030] In one embodiment, the PECVD-magnetron sputtering co-deposition doped film device further includes a vacuum mechanism for performing a vacuuming operation on the accommodating cavity.

[0031] This application provides a PECVD-magnetron sputtering co-deposition doped film device. Magnetron sputtering is used to deposit a thin film onto a substrate during the PECVD process, doping it with other oxides, metals, or semiconductors. The deposition rate of the magnetron sputtering can be controlled by a sputtering adjustment mechanism. Within the housing cavity of the PECVD-magnetron sputtering co-deposition doped film device, a chemical vapor deposition (CVD) mechanism and a magnetron sputtering mechanism are disposed. During the PECVD process on the target substrate of the substrate connecting component, the magnetron sputtering mechanism can co-deposit on the surface of the target substrate, allowing the PECVD-formed thin film to be particle-doped by magnetron sputtering. A sputtering adjustment mechanism is provided between the magnetron sputtering mechanism and the substrate connecting component, which not only allows for precise control of the sputtering rate of the magnetron sputtering mechanism but also improves the deposition uniformity of the magnetron sputtering mechanism. Attached Figure Description

[0032] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0033] Figure 1 A three-dimensional structural schematic diagram of a PECVD-magnetron sputtering co-deposition doped film device provided in this application embodiment;

[0034] Figure 2 A partial three-dimensional structural schematic diagram of a PECVD-magnetron sputtering co-deposition doped film device provided in this application embodiment;

[0035] Figure 3 A three-dimensional structural schematic diagram of a magnetron sputtering mechanism provided in an embodiment of this application;

[0036] Figure 4 A three-dimensional structural schematic diagram of a sputtering adjustment mechanism provided in an embodiment of this application;

[0037] Figure 5A three-dimensional structural schematic diagram of the second adjustment component provided in the embodiments of this application at a first position;

[0038] Figure 6 A three-dimensional structural diagram of the second adjustment component provided in the embodiment of this application at the second position.

[0039] Explanation of reference numerals in the attached figures:

[0040] 100. PECVD-magnetron sputtering co-deposition doped film apparatus; 10. Housing; 20. Substrate connection component; 30. Chemical vapor deposition mechanism; 40. Magnetron sputtering mechanism; 50. Sputtering adjustment mechanism; 60. First drive mechanism; 70. Gas supply mechanism; 11. Receptacle; 21. Heating unit; 41. Target magnetron sputtering assembly; 42. First magnetron sputtering assembly; 43. Second magnetron sputtering assembly; 44. Third magnetron sputtering assembly; 51. First adjustment assembly; 52. First baffle; 53. First drive component; 54. First gear; 55. Connector; 56. Second adjustment assembly; 57. Second baffle; 58. Second drive assembly; 59. Through hole; 71. First gas supply assembly; 72. First gas supply port; 73. Second gas supply assembly; 74. Second gas supply port;

[0041] The realization of the purpose, functional features and advantages of this utility model will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0042] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0043] In the description of this application, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0044] It is understood that descriptions involving "first," "second," etc., are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include at least one of those features.

[0045] The following detailed description of some embodiments of this application is provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0046] Please see Figures 1 to 3 , Figure 1 This is a three-dimensional structural schematic diagram of a PECVD-magnetron sputtering co-deposition doped film device provided in an embodiment of this application. Figure 2 This is a partial three-dimensional structural schematic diagram of a PECVD-magnetron sputtering co-deposition doped film device provided in an embodiment of this application. Figure 3 This is a three-dimensional structural diagram of a magnetron sputtering mechanism provided in an embodiment of this application.

[0047] like Figures 1 to 3 As shown, the PECVD-magnetron sputtering co-deposition doped film device 100 is provided with a substrate connection component 20 for fixing the substrate to be deposited. In addition, the PECVD-magnetron sputtering co-deposition doped film device 100 also includes: a housing 10, a chemical vapor deposition mechanism 30, a magnetron sputtering mechanism 40, and a sputtering adjustment mechanism 50.

[0048] The housing 10 has a receiving cavity 11, which has a gas supply mechanism 70 for introducing reaction gas. The substrate connecting member 20 is disposed in the receiving cavity 11 and is located at one end of the receiving cavity 11 near the chemical vapor deposition mechanism 30.

[0049] The chemical vapor deposition (CVD) unit 30 is at least partially housed within the accommodating cavity 11 for ionizing the reactive gas introduced into the accommodating cavity 11 to obtain plasma clusters, and for depositing the ionized plasma clusters onto the target surface of the substrate to be deposited. It is understood that the CVD unit 30 performs plasma-enhanced CVD on the substrate to be deposited to form a thin film on the target surface.

[0050] The magnetron sputtering mechanism 40 is at least partially housed in the receiving cavity 11 and corresponds to the position of the substrate connection member 20 that fixes the substrate to be deposited. The magnetron sputtering mechanism 40 includes a radio frequency (RF) power supply and a target material is fixed at one end near the substrate connection member 20. The RF power supply ionizes the reactive gas within the receiving cavity 11 to form high-energy particles. These high-energy ions bombard the target material, causing target atoms to be sputtered and deposited onto the target surface of the substrate. It can be understood that the magnetron sputtering mechanism 40 performs magnetron sputtering deposition on the substrate to obtain a thin film.

[0051] The sputtering adjustment mechanism 50 is disposed between the magnetron sputtering mechanism 40 and the substrate connecting component 20, and is located near the end of the magnetron sputtering mechanism 40 where the target material is fixed, and is used to adjust the flow rate of target material atoms output by the magnetron sputtering mechanism 40 to the target surface.

[0052] With this configuration, on the one hand, the accommodating cavity 11 is equipped with a chemical vapor deposition mechanism 30 and a magnetron sputtering mechanism 40, so that during the PECVD process of the chemical vapor deposition mechanism 30 on the target substrate of the substrate connecting component 20, the magnetron sputtering mechanism 40 can co-deposit on the surface of the target substrate, so that particle doping can be performed simultaneously with PECVD. On the other hand, the sputtering adjustment mechanism 50 is disposed between the magnetron sputtering mechanism 40 and the substrate connecting component 20, which facilitates precise control of the deposition rate of the magnetron sputtering mechanism 40.

[0053] In some embodiments, the PECVD-magnetron sputtering co-deposition doped film device 100 has a switchable first operating mode and a second operating mode.

[0054] In the first operating mode, one of the chemical vapor deposition mechanism 30 and the magnetron sputtering mechanism 40 is operated. That is, the PECVD-magnetron sputtering co-deposition doped film device 100 can operate the chemical vapor deposition mechanism 30 alone to perform plasma-enhanced chemical vapor deposition on the target substrate, or operate the magnetron sputtering mechanism 40 alone to perform magnetron sputtering deposition on the target substrate.

[0055] In the second working mode, both the chemical vapor deposition mechanism 30 and the magnetron sputtering mechanism 40 are in operation. That is, during the plasma-enhanced chemical vapor deposition process of the chemical vapor deposition mechanism 30 on the target substrate, the magnetron sputtering mechanism 40 can be operated simultaneously to co-deposit target atoms on the surface of the target substrate, so that particle doping can be carried out by magnetron sputtering during the plasma-enhanced chemical vapor deposition process, thereby changing the performance of the thin film.

[0056] For example, the PECVD-magnetron sputtering co-deposition doped film apparatus 100 can prepare Ag-doped diamond-like films in the second operating mode. A certain proportion of CH4 and Ar are introduced into the accommodating cavity 11 through the gas supply mechanism 70. The chemical vapor deposition mechanism 30 is activated to ionize CH4 to form C* and H*. C* is deposited on the substrate to be deposited on the substrate connection component 20 to form a carbon film. Simultaneously with PECVD, the magnetron sputtering mechanism 40, with an Ag target fixed in place, is activated, and Ar is ionized into Ar using an RF power supply. * Ar * The Ag target is bombarded by the magnetic field of the magnetron sputtering mechanism 40, thereby causing the Ag particles in the Ag target to be sputtered toward the carbon film on the substrate to be deposited.

[0057] Under the co-deposition of chemical vapor deposition mechanism 30 and magnetron sputtering mechanism 40, a diamond-like carbon film doped with Ag is deposited on the substrate to be deposited. The doping of Ag improves the optical and electrical properties of the diamond-like carbon film.

[0058] The two operating modes not only give the PECVD-magnetron sputtering co-deposition doped film device 100 greater process flexibility and scenario adaptability, allowing for a wider range of operations and improving the device's practicality and utilization, but also enable the chemical vapor deposition mechanism 30 and the magnetron sputtering mechanism 40 to co-deposit in the second operating mode, thereby changing the film's properties.

[0059] In some embodiments, the magnetron sputtering mechanism 40 includes a first magnetron sputtering component 42, a second magnetron sputtering component 43, and a third magnetron sputtering component 44, and the three components may be located in different positions within the accommodating cavity 11.

[0060] The first magnetron sputtering component 42 is used to output target atoms to a first region of the target surface of the substrate to be deposited, the second magnetron sputtering component 43 is used to output target atoms to a second region of the target surface of the substrate to be deposited, and the third magnetron sputtering component 44 is used to output target atoms to a third region of the target surface of the substrate to be deposited, and the first, second and third regions of the target surface completely overlap.

[0061] This configuration ensures that the deposition areas of the first magnetron sputtering assembly 42, the second magnetron sputtering assembly 43, and the third magnetron sputtering assembly 44 are the same, thereby guaranteeing the uniformity and consistent surface thickness of the thin film formed on the target surface.

[0062] Furthermore, the magnetron sputtering mechanism 40 can operate any number of magnetron sputtering components as needed for film deposition.

[0063] For example, the magnetron sputtering mechanism 40 can activate only one of the first magnetron sputtering component 42, the second magnetron sputtering component 43, and the third magnetron sputtering component 44, without activating the remaining two; or it can activate only any two of the first magnetron sputtering component 42, the second magnetron sputtering component 43, and the third magnetron sputtering component 44, without activating the remaining one. This flexible use of multiple magnetron sputtering components can flexibly meet more application scenarios, thus enabling the magnetron sputtering mechanism 40 to have more diverse application scenarios and requirements.

[0064] The PECVD-magnetron sputtering co-deposition doped film device 100 includes a target magnetron sputtering component 41, which includes at least one of a first magnetron sputtering component 42, a second magnetron sputtering component 43, and a third magnetron sputtering component 44.

[0065] The sputtering adjustment mechanism 50 is disposed between the target magnetron sputtering assembly 41 and the substrate connecting component 20, and closer to one end of the target magnetron sputtering assembly 41. It is used to adjust the flow rate of target atoms output by the target magnetron sputtering assembly 41 to the target surface of the substrate to be deposited. The sputtering adjustment mechanism 50 can be configured for a single magnetron sputtering assembly in the target magnetron sputtering assembly 41, or it can be configured for multiple magnetron sputtering assemblies in the target magnetron sputtering assembly 41 at the same time.

[0066] In this embodiment, the sputtering adjustment mechanism 50 is configured to correspond to a single magnetron sputtering component in the target magnetron sputtering assembly 41, which not only helps to control the sputtering rate of the magnetron sputtering mechanism 40, but also helps to improve the uniformity of magnetron sputtering.

[0067] Furthermore, to meet the diverse needs of thin film deposition, the first magnetron sputtering assembly 42, the second magnetron sputtering assembly 43, and the third magnetron sputtering assembly 44 can not only be configured with the same target material to increase the efficiency of magnetron sputtering, but can also be configured with different target materials, so that the first magnetron sputtering assembly 42, the second magnetron sputtering assembly 43, and the third magnetron sputtering assembly 44 can be configured to output different target atoms to the target surface of the substrate to be deposited.

[0068] This configuration allows the PECVD-magnetron sputtering co-deposition doped film device 100 to simultaneously dope multiple substances, thus enabling the PECVD-magnetron sputtering co-deposition doped film device 100 to have more diverse application scenarios and meet more needs.

[0069] In some embodiments, the gas supply mechanism 70 includes a first gas supply component 71, which has at least two first gas supply ports 72, and the first magnetron sputtering component 42 and the second magnetron sputtering component 43 each correspond to at least one first gas supply port 72. The gas supply mechanism 70 also includes a second gas supply component 73, which is disposed in the chemical vapor deposition mechanism 30. The second gas supply component 73 has a plurality of second gas supply ports 74, which are located inside the chemical vapor deposition mechanism 30 and are spaced apart and arranged around the periphery of the substrate to be deposited.

[0070] In this embodiment, the first gas supply component 71 is not only close to the first magnetron sputtering component 42, the second magnetron sputtering component 43, and the third magnetron sputtering component 44, but also includes three first gas supply ports 72 corresponding to the first magnetron sputtering component 42, the second magnetron sputtering component 43, and the third magnetron sputtering component 44, respectively. The horizontal height of the first gas supply ports 72 on the first gas supply component 71 is equal to that of the magnetron sputtering mechanism 40.

[0071] For example, in the process of preparing Ag-doped diamond-like carbon thin films in the second operating mode of the PECVD-magnetron sputtering co-deposition doped film apparatus 100, Ar and CH4 need to be supplied to the magnetron sputtering mechanism 40 and the chemical vapor deposition mechanism 30, respectively. Ar is introduced into the magnetron sputtering mechanism 40 through the first gas supply port 72 of the first gas supply component 71. Furthermore, the first gas supply port 72 is close to the first magnetron sputtering component 42, the second magnetron sputtering component 43, and the third magnetron sputtering component 44, which can improve the sputtering efficiency of the magnetron sputtering mechanism. CH4 is introduced into the chemical vapor deposition mechanism 30 through the second gas supply port 74 of the second gas supply component 73. Moreover, the second gas supply port 74 is close to the chemical vapor deposition mechanism 30, which can improve the deposition efficiency of PECVD.

[0072] A first gas supply component 71 and a second gas supply component 73 are respectively provided adjacent to the magnetron sputtering mechanism 40 and the chemical vapor deposition mechanism 30. This arrangement not only reduces the mutual influence between the two working gases when the gas supply mechanism 70 inputs the two working gases to the magnetron sputtering mechanism 40 and the chemical vapor deposition mechanism 30, but also improves the working efficiency of the two mechanisms.

[0073] In some embodiments, the chemical vapor deposition mechanism 30 is disposed around the periphery of the substrate connection member 20, and the substrate connection member 20 is rotatable relative to the chemical vapor deposition mechanism 30. During the magnetron sputtering deposition process, the rotation of the substrate connection member 20 can make the deposition film formed by magnetron sputtering on the substrate to be deposited more uniform. Furthermore, the substrate connection member 20 is provided with a heating part 21 for raising the temperature of the substrate to be deposited. The heating part 21 can not only provide a suitable temperature according to the deposition conditions, but also improve the deposition efficiency.

[0074] The PECVD-magnetron sputtering co-deposition doped film device 100 is further provided with a first driving mechanism 60, which is used to drive at least one of the substrate connection component 20 and the chemical vapor deposition mechanism 30 to move, so as to adjust the distance between the substrate connection component 20 and the magnetron sputtering mechanism 40.

[0075] In the first operating mode, when only the magnetron sputtering mechanism 40 is running for magnetron sputtering, the first drive mechanism 60 can drive only the substrate connection component 20 to move away from or towards the magnetron sputtering mechanism 40. During this process, the substrate connection component 20 moves relative to the chemical vapor deposition mechanism 30.

[0076] When the chemical vapor deposition mechanism 30 and the magnetron sputtering mechanism 40 are operating in the second working mode, the first drive mechanism 60 can simultaneously drive the substrate connection component 20 and the chemical vapor deposition mechanism 30 to move away from or towards the magnetron sputtering mechanism 40. During the movement, the distance between the substrate connection component 20 and the chemical vapor deposition mechanism 30 remains relatively fixed.

[0077] With this configuration, the sputtering rate of magnetron sputtering and the content of target atoms in the film formed on the substrate to be deposited in the substrate connection component 20 can be controlled by adjusting the distance between the substrate connection component 20 and the magnetron sputtering mechanism 40. Furthermore, during the PECVD operation, the relative distance between the substrate connection component 20 and the chemical vapor deposition mechanism 30 will not be affected.

[0078] Please see Figure 4 , Figure 4 This is a three-dimensional structural diagram of a sputtering adjustment mechanism provided in an embodiment of this application.

[0079] like Figure 4 As shown, in some embodiments, the sputtering adjustment mechanism 50 includes a first adjustment component 51 for adjusting the atomic output rate of the target material. The first adjustment component 51 includes a first baffle 52, a first driving component 53, and a connector 55, wherein the first baffle 52 and the connector 55 are rotatably connected.

[0080] The first baffle 52 is disposed between the magnetron sputtering mechanism 40 and the substrate connecting component 20, and a plurality of through holes 59 are formed on the first baffle 52. The first driving component 53 is connected to the first baffle 52 and can rotate the first baffle 52 and adjust the rotation speed of the first baffle 52 by driving the first baffle 52.

[0081] By rotating the first baffle 52 of the sputtering adjustment mechanism 50, the through hole 59 formed on the first baffle 52 can not only allow some target atoms to pass through, but also block the deposition of some atoms. The rotation speed of the first baffle 52 is negatively correlated with the flow rate of target atoms output by the magnetron sputtering mechanism 40 to the target surface.

[0082] It is understood that during the operation of the magnetron sputtering mechanism 40, the first driving component 53 drives the first baffle 52 to rotate and adjust the rotation speed of the first baffle 52. When the rotation speed of the first baffle 52 decreases, the number of atoms passing through the through-holes 59 on the first baffle 52 increases, and the atomic deposition rate on the substrate to be deposited accelerates; when the rotation speed of the first baffle 52 increases, the number of atoms passing through the through-holes 59 on the first baffle 52 decreases, and the atomic deposition rate on the substrate to be deposited slows down. The sputtering adjustment mechanism 50 adjusts the output flow rate of target atoms by adjusting the rotation speed of the first baffle 52, thereby achieving precise control of the magnetron sputtering deposition rate, and thus achieving precise control of the content of target atoms in the substrate to be deposited.

[0083] For example, Ag is one of the metals with a high sputtering rate. During the sputtering process of an Ag target, the sputtering rate of Ag atoms is relatively fast, making it difficult to precisely control the content of the dopant element silver in the substrate to be deposited. By setting a first adjustment component 51 above the Ag target and controlling the rotation speed of the first baffle 52, the number of Ag particles sputtered through the through-hole 59 can be controlled, thereby achieving precise control over the content of Ag atoms in the substrate to be deposited.

[0084] With this configuration, the sputtering adjustment mechanism 50, through the first adjustment component 51, can not only control the deposition rate of some high sputtering rate materials, thereby precisely controlling the content of high sputtering rate particles in the deposited film, but also improve the deposition uniformity of the film formed by the magnetron sputtering mechanism 40 on the substrate surface. Furthermore, the first adjustment component 51 has a simple and practical structure, which improves the maintenance convenience and operational stability of the PECVD-magnetron sputtering co-deposition doped film device 100.

[0085] In some embodiments, the first adjustment assembly 51 further includes a second driving component, which is connected to one end of the connector 55, and the other end of the connector 55 is connected to the first baffle 52. Driven by the second driving component, the first baffle 52 can be moved relative to the sputtering adjustment mechanism 50 via the connector 55, thereby allowing the first baffle 52 to move closer to or further away from the sputtering adjustment mechanism 50.

[0086] It is understood that when the sputtering adjustment mechanism 50 is processing a target with a high sputtering rate, the first baffle 52 can be brought close to the sputtering adjustment mechanism 50 by the second driving component driving the connector 55 and fixed above the target. Then, the first baffle 52 can be rotated by the first driving component 53, so that the first baffle 52 can control the deposition rate of the high sputtering rate target.

[0087] When the sputtering adjustment mechanism 50 processes a target material for which the deposition rate does not need to be controlled, the second drive component can drive the first baffle 52 away from the sputtering adjustment mechanism 50 via the connector 55, so that the target material can directly and unobstructedly reach the substrate to be deposited on the substrate connecting component 20.

[0088] This configuration allows the PECVD-magnetron sputtering co-deposition doped film device 100 to employ corresponding processing methods for target materials of different materials, thereby enabling the PECVD-magnetron sputtering co-deposition doped film device 100 to cope with more application scenarios and thus improve the efficiency of the device.

[0089] In some embodiments, a plurality of through holes 59 are spaced apart on the first baffle 52, and a first gear portion 54 is arranged around the periphery of the first baffle 52. The first baffle 52 meshes with the first drive member 53 through the first gear portion 54, so that the first drive member 53 can drive the first baffle 52 to rotate through the first gear portion 54 and adjust the rotation speed of the first baffle 52.

[0090] By surrounding the first gear 54 with the first baffle 52, the first gear 54 and the first drive component 53 will not obstruct the sputtering path through the first baffle 52 during the process of rotating the first baffle 52 to adjust the sputtering rate.

[0091] The first baffle 52 and the magnetron sputtering mechanism 40 have a first gap L, which is 5cm.

[0092] This arrangement is designed so that the first baffle 52 can almost completely cover the magnetron sputtering mechanism 40, which is beneficial for the first adjustment component 51 to control the sputtering atomic deposition rate. At the same time, the certain distance between the first baffle 52 and the magnetron sputtering mechanism 40 can ensure that the ionized Ar* can bombard the target material below the first baffle 52. Therefore, maintaining a suitable distance between the first baffle 52 and the target material of the magnetron sputtering mechanism 40 can ensure the efficiency of Ar* bombardment of the target material.

[0093] Please see Figure 5 and Figure 6 , Figure 5 This is a three-dimensional structural diagram of the second adjustment component provided in the embodiments of this application at the first position. Figure 6 A three-dimensional structural diagram of the second adjustment component provided in the embodiment of this application at the second position.

[0094] like Figure 5 and Figure 6As shown, in some embodiments, the sputtering adjustment mechanism 50 further includes a second adjustment component 56, which includes a second baffle 57 and a second drive component 58. The second baffle 57 is disposed between the first adjustment component 51 and the magnetron sputtering mechanism 40 and is in close contact with the end of the magnetron sputtering mechanism 40 where the target is placed.

[0095] The second driving component 58 is connected to the second baffle 57 and is used to drive the second baffle 57 to move, so that the second baffle 57 can rotate relative to the magnetron sputtering mechanism 40 to a first position or a second position. The area where the magnetron sputtering mechanism 40 outputs target atoms forms a magnetron sputtering surface. When the second baffle 57 rotates relative to the magnetron sputtering mechanism 40 to the first position and the second position, respectively, the second baffle 57 forms a first projection and a second projection in the direction perpendicular to the magnetron sputtering surface. The area covered by the first projection on the magnetron sputtering surface is larger than the area covered by the second projection on the magnetron sputtering surface.

[0096] It is understood that when the second baffle 57 is rotated to the first position, the second baffle 57 can cover and shield the target of the first magnetron sputtering assembly 42, thereby causing the first projection to overlap with the target at one end of the first magnetron sputtering assembly 42.

[0097] When the second baffle 57 is rotated to the second position, the second baffle 57 completely exposes the target of the first magnetron sputtering assembly 42, so that the second projection does not overlap with the target at one end of the first magnetron sputtering assembly 42.

[0098] For example, when the first magnetron sputtering assembly 42 needs to perform magnetron sputtering while the second magnetron sputtering assembly 43 does not need to perform magnetron sputtering, the second baffle 57 of the first magnetron sputtering assembly 42 rotates to the second position, exposing the target material of the first magnetron sputtering assembly 42 without obstruction, thus enabling magnetron sputtering. At the same time, the second baffle 57 of the second magnetron sputtering assembly 43 rotates to the first position, covering the target material of the second magnetron sputtering assembly 43 so that it is not contaminated by the atoms sputtered by the first magnetron sputtering assembly 42.

[0099] This configuration allows the second adjustment component 56 to prevent the target material of another part of the magnetron sputtering components in the magnetron sputtering mechanism 40 from being contaminated while some of the magnetron sputtering components in the magnetron sputtering mechanism 40 are performing magnetron sputtering. This greatly improves the user experience of the PECVD-magnetron sputtering co-deposition doped film device 100. Furthermore, the closer proximity of the second baffle 57 reduces the exposed area of ​​the target material of the magnetron sputtering components, thereby lowering the possibility of target contamination.

[0100] In some embodiments, the PECVD-magnetron sputtering co-deposition doped film apparatus 100 also includes a vacuum mechanism that can be used to perform a vacuuming operation on the accommodating cavity 11 before the reaction gas is introduced.

[0101] It should be understood that the terminology used in this specification is for the purpose of describing particular embodiments only and is not intended to limit the scope of the application. As used in this specification and the appended claims, the singular forms “a,” “an,” and “the” are intended to include the plural forms unless the context clearly indicates otherwise.

[0102] It should also be understood that the term "and / or" as used in this specification and the appended claims refers to any combination and all possible combinations of one or more of the associated listed items, and includes such combinations. It should be noted that, herein, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or system that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or system. Without further limitation, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or system that includes that element.

[0103] The sequence numbers of the embodiments in this application are for descriptive purposes only and do not represent the superiority or inferiority of the embodiments. The above descriptions are merely specific implementations of this application, but the scope of protection of this application is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in this application, and these modifications or substitutions should all be covered within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A PECVD-magnetron sputter co-deposition doped film layer apparatus, characterized in that, The device includes a substrate connection component for fixing the substrate to be deposited, and the PECVD-magnetron sputtering co-deposition doped film device includes: The housing has a receiving cavity, the receiving cavity also having a gas supply mechanism for introducing the reaction gas, and the base connecting member is located within the receiving cavity; A chemical vapor deposition apparatus is at least partially housed in the accommodating cavity and is used to ionize the reactive gas within the accommodating cavity so that the plasma clusters generated by ionization are deposited onto the target surface of the substrate to be deposited, thereby forming a thin film on the target surface. A magnetron sputtering mechanism is at least partially housed in the accommodating cavity and is used to deliver target atoms to the target surface of the substrate to be deposited; A sputtering adjustment mechanism is disposed between the magnetron sputtering mechanism and the substrate connecting component, and is used to adjust the flow rate of target atoms output by the magnetron sputtering mechanism to the target surface; The sputtering adjustment mechanism includes a first adjustment component, which includes a connector, a first baffle, and a first driving component. The first baffle is disposed between the magnetron sputtering mechanism and the substrate connecting component, and is rotatably connected to the connecting component, and a through hole is formed on the first baffle; The first driving component is connected to the first baffle and is used to drive the first baffle to rotate and adjust the rotation speed of the first baffle. The rotational speed of the first baffle is negatively correlated with the flow rate of target atoms output to the target surface by the magnetron sputtering mechanism.

2. The PECVD-magnetron sputtering co-deposition doped film apparatus as described in claim 1, characterized in that, The PECVD-magnetron sputtering co-deposition doped film device has a switchable first operating mode and a second operating mode. In the first operating mode, one of the chemical vapor deposition mechanism and the magnetron sputtering mechanism operates. When the magnetron sputtering mechanism is operating, the flow rate of the target material atoms output by the magnetron sputtering mechanism to the target surface can be adjusted by the sputtering adjustment mechanism. In the second operating mode, both the chemical vapor deposition mechanism and the magnetron sputtering mechanism are in operation, and the flow rate of the target atoms output by the magnetron sputtering mechanism to the target surface can be adjusted by the sputtering adjustment mechanism.

3. The PECVD-magnetron sputtering co-deposition doped film apparatus as described in claim 1, characterized in that, The magnetron sputtering mechanism includes at least a first magnetron sputtering component and a second magnetron sputtering component. The first magnetron sputtering component is used to output the target atoms to a first region of the target surface of the substrate to be deposited, and the second magnetron sputtering component is used to output the target atoms to a second region of the target surface of the substrate to be deposited. The first region and the second region at least partially overlap. The sputtering adjustment mechanism is configured to correspond to the target magnetron sputtering assembly and is used to adjust the flow rate of the target magnetron sputtering assembly to output the target atoms to the target surface of the substrate to be deposited. The target magnetron sputtering assembly includes at least one of a first magnetron sputtering assembly and a second magnetron sputtering assembly. The first magnetron sputtering assembly and the second magnetron sputtering assembly are configured to output different target atoms to the target surface of the substrate to be deposited, or the first magnetron sputtering assembly and the second magnetron sputtering assembly are configured to output the same target atoms to the target surface of the substrate to be deposited.

4. The PECVD-magnetron sputtering co-deposition doped film apparatus as described in claim 3, characterized in that, The gas supply mechanism includes a first gas supply component, which is provided with at least two first gas supply ports, and both the first magnetron sputtering component and the second magnetron sputtering component correspond to at least one of the first gas supply ports; And / or, the gas supply mechanism includes a second gas supply component, which is disposed in the chemical vapor deposition mechanism, wherein the second gas supply component is provided with a plurality of second gas supply ports, which are located inside the chemical vapor deposition mechanism and are spaced apart and arranged around the periphery of the substrate to be deposited.

5. The PECVD-magnetron sputtering co-deposition doped film apparatus as described in claim 1, characterized in that, The chemical vapor deposition mechanism is arranged around the periphery of the substrate connecting member, and the substrate connecting member is rotatable relative to the chemical vapor deposition mechanism, and the substrate connecting member is provided with a heating part; The PECVD-magnetron sputtering co-deposition doped film device is further provided with a first driving mechanism, which is used to drive at least one of the substrate connection component and the chemical vapor deposition mechanism to move, so as to adjust the spacing between the substrate connection component and the magnetron sputtering mechanism.

6. The PECVD-magnetron sputtering co-deposition doped film apparatus as described in claim 1, characterized in that, The first adjustment component further includes a second driving component, which is connected to the connector and is used to drive the connector to move relative to the magnetron sputtering mechanism so that the first baffle moves closer to or further away from the magnetron sputtering mechanism.

7. The PECVD-magnetron sputtering co-deposition doped film apparatus as described in claim 1, characterized in that, Multiple through holes are spaced apart on the first baffle, and a first gear is provided on the periphery of the first baffle. The first driving component meshes with the first gear to adjust the rotation speed of the first baffle. The first baffle and the magnetron sputtering mechanism have a first distance L, which satisfies that 2≤L≤8cm.

8. The PECVD-magnetron sputtering co-deposition doped film apparatus as described in claim 1, characterized in that, The sputtering adjustment mechanism further includes a second adjustment component, wherein the second adjustment component includes a second baffle and a second drive component. The second baffle is disposed between the first adjustment component and the magnetron sputtering mechanism, and the second drive component is used to drive the second baffle to move so that the second baffle rotates relative to the magnetron sputtering mechanism to a first position or a second position. The region where the magnetron sputtering mechanism outputs the target atoms forms a magnetron sputtering surface. When the second baffle rotates relative to the magnetron sputtering mechanism to the first position, the second baffle forms a first projection in the direction perpendicular to the magnetron sputtering surface. When the second baffle is rotated to the second position relative to the magnetron sputtering mechanism, the second baffle forms a second projection in the direction perpendicular to the magnetron sputtering surface; The area covered by the first projection on the magnetron sputtering surface is larger than the area covered by the second projection on the magnetron sputtering surface.

9. The PECVD-magnetron sputtering co-deposition doped film apparatus according to any one of claims 1-5, characterized in that, The PECVD-magnetron sputtering co-deposition doped film device also includes a vacuum mechanism for performing a vacuuming operation on the accommodating cavity.

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