Vapor deposition reactor

Abstract

This invention provides a vapor deposition reactor, comprising a furnace body, a container, a first inlet channel, an outlet channel, and a differential pressure regulating unit. The furnace body has a furnace cavity inside; the container is located in the furnace cavity and has a reaction chamber inside, while the furnace cavity outside the container forms a heating chamber; one end of the first inlet channel extends into the container and connects to the reaction chamber, and the other end is used to connect to an external reaction gas source; one end of the outlet channel connects the reaction chamber and the heating chamber, and the other end connects to the outside of the furnace body; the differential pressure regulating unit includes at least a first regulating unit, which is used to regulate the flow area of ​​the outlet channel.

Description

Technical Field

[0001] This utility model relates to the field of vapor phase deposition reaction technology, and in particular to a vapor phase deposition reaction apparatus. Background Technology

[0002] Chemical vapor deposition (CVD) reactors are used to induce chemical vapor deposition reactions in reactive gases to form thin films on the surface of specific materials. Existing CVD reactors employ a design that combines a furnace and a container, with the container housed within the furnace. The furnace contains a heater and insulation felt surrounding the furnace, while the container receives the reactive gases for deposition within it.

[0003] Existing chemical vapor deposition reactors face problems such as easy damage to heaters and short service life of insulation felt. The reason for these problems is that when excess reactive gas enters the heating chamber, it will deposit on the surface of the heater and insulation felt and form a thin film. The film will affect the heater's ability to deform with temperature changes, causing the heater to crack, and will also reduce the insulation performance of the insulation felt. Utility Model Content

[0004] In view of this, the present invention provides a vapor deposition reaction apparatus designed to prevent reaction gases from entering the heating chamber, thereby improving the reliability of the heater and the durability of the insulation felt.

[0005] The vapor deposition reactor of this invention includes a furnace body, a container, a first inlet channel, an outlet channel, and a differential pressure regulating unit. The furnace body has a furnace cavity inside; the container is located in the furnace cavity and has a reaction chamber inside the container, and the furnace cavity located outside the container forms a heating chamber; one end of the first inlet channel extends into the container and connects to the reaction chamber, and the other end is used to connect to an external reaction gas source; one end of the outlet channel connects the reaction chamber and the heating chamber, and the other end connects to the outside of the furnace body; the differential pressure regulating unit includes at least a first regulating unit, which is used to regulate the flow area of ​​the outlet channel.

[0006] Compared with the prior art, the vapor deposition reaction apparatus of this utility model can reduce the flow area of ​​the outlet channel by adjusting the first adjustment unit, thereby increasing the gas pumping speed outside the outlet channel and reducing the gas pressure outside the outlet channel. The gas pressure in the reaction chamber is greater than the gas pressure outside the outlet channel, and the pressure difference between the two is further increased. This ensures that excess reaction gas will not flow back into the heating chamber after being discharged from the outlet channel, avoiding the deposition of reaction gas in the heating chamber. The heater and the surface of the insulation felt are less likely to form a thin film, ultimately improving the reliability of the heater and the durability of the insulation felt.

[0007] In some embodiments, the container includes a front sidewall and a rear sidewall disposed opposite to each other, a reaction chamber is formed between the front sidewall and the rear sidewall, a first inlet channel extends into the furnace body and penetrates the front sidewall, and the rear sidewall has a first outlet to connect to the outlet channel.

[0008] With this configuration, the reactive gas forms a uniform flow field within the reaction chamber. The flow direction of the reactive gas entering the reaction chamber from the first inlet channel is approximately the same as the flow direction of the reactive gas leaving the reaction chamber from the first outlet. This avoids the reactive gas from changing direction and affecting the uniformity of the flow field. As a result, the quality of the chemical vapor deposition reaction products inside the reaction chamber can be improved, and the thickness of the deposited film can be ensured to be uniform.

[0009] In some embodiments, the furnace body has a second outlet that connects to the heating chamber, and the first outlet and the outlet channel are located on the inner and outer sides of the second outlet, respectively. The first inlet channel, the first outlet, the second outlet and the outlet channel are arranged sequentially along a preset straight line direction.

[0010] With this configuration, the reactive gas can flow sequentially through the first inlet channel, the reaction chamber, the first outlet, the second outlet, and the outlet channel with lower resistance. The flow field of the reactive gas in the reaction chamber is more uniform and the flow velocity changes less. At the same time, the reactive gas diffuses more evenly from the flow field in the reaction chamber to the surrounding area, ultimately allowing the reactive gas to uniformly occupy the entire reaction chamber space.

[0011] In some embodiments, the vapor deposition reactor further includes a second inlet channel, one end of which is connected to the heating chamber and the other end of which is used to connect to an external protective gas source.

[0012] With this configuration, an external protective gas source can supply protective gas into the heating chamber through the second inlet channel. The protective gas can form a protective atmosphere in the heating chamber. When the reactive gas seeps out of the container and diffuses into the heating chamber, the protective atmosphere can dilute the concentration of the reactive gas in the heating chamber, thereby inhibiting the deposition reaction of the reactive gas in the heating chamber. Therefore, the outer side of the container, the heater and the surface of the insulation felt remain clean and it is difficult for a deposited film to form under the protection atmosphere.

[0013] In some embodiments, the differential pressure regulating unit further includes a flow regulating unit for regulating the flow rate of gas entering the heating chamber through the second inlet channel.

[0014] With this configuration, the vapor deposition reactor can increase the flow rate of the protective gas entering the heating chamber by adjusting the flow control unit, thereby increasing the gas pressure inside the heating chamber. The gas pressure in the heating chamber is greater than that in the reaction chamber, and the pressure difference between the two increases. This prevents the reaction gas in the reaction chamber from seeping out of the container and prevents the reaction gas from entering the heating chamber. It solves the problem of reaction gas deposition on the outside of the container, the heater, and the surface of the insulation felt. No thin film is generated on the surface of the heater and the insulation felt.

[0015] In some embodiments, the first regulating unit is a first air valve, which has an adjustable opening and is connected in series with the outlet channel.

[0016] With this configuration, the flow area of ​​the outlet channel increases as the opening of the first air valve increases and decreases as the opening of the first air valve decreases.

[0017] In some embodiments, the differential pressure regulating unit further includes a second regulating unit for regulating the flow rate of gas entering the reaction chamber through the first inlet channel.

[0018] With this configuration, the vapor deposition reactor can increase the flow rate of the reaction gas entering the reaction chamber by adjusting the second regulating unit, thereby increasing the gas pressure inside the reaction chamber. The gas pressure inside the reaction chamber is greater than the gas pressure outside the outlet channel, and the pressure difference between the two is further increased. This can prevent excess reaction gas from flowing back into the heating chamber after being discharged from the outlet channel, thus avoiding the deposition of reaction gas in the heating chamber.

[0019] In some embodiments, a first pressure gauge and a second pressure gauge are also included, wherein the first pressure gauge is used to measure the gas pressure inside the reaction chamber and the second pressure gauge is used to measure the gas pressure outside the outlet channel.

[0020] In some embodiments, a first pressure measuring tube and a second pressure measuring tube are also included. The first pressure measuring tube extends into the container and communicates with the reaction chamber, and the second pressure measuring tube extends to the outside of the outlet channel, wherein:

[0021] There are multiple first pressure gauges, each connected to a first pressure measuring tube, and each first pressure gauge has a different measuring range; and / or

[0022] There are multiple second pressure gauges, each connected to a second pressure measuring tube, and each second pressure gauge has a different range.

[0023] This setup expands the measurable range of gas pressure inside the reaction chamber and outside the outlet channel. For example, under a new reaction condition, the gas pressure inside the reaction chamber increases compared to the previous reaction condition. In this case, a first pressure gauge with a larger range can be activated to measure the gas pressure inside the reaction chamber under the new reaction condition. The gas pressure inside the reaction chamber and outside the outlet channel can be accurately measured under different reaction conditions.

[0024] In some embodiments, the vapor deposition reactor further includes a first differential pressure gauge connected to a first pressure measuring tube and a second pressure measuring tube.

[0025] In some embodiments, a third pressure measuring tube and a second differential pressure gauge are also included. The third pressure measuring tube extends into the furnace body and is connected to the heating chamber. The second differential pressure gauge is connected to the first pressure measuring tube and the third pressure measuring tube.

[0026] In some embodiments, the third pressure measuring tube includes a first end, a pressure measuring part, and a second end. The first end, the pressure measuring part, and the second end are arranged sequentially along the extension direction of the third pressure measuring tube. The first end extends into the furnace body, the pressure measuring part is connected to the second differential pressure gauge, the second end is connected to the second pressure measuring tube, and an on / off valve is provided between the pressure measuring part and the second end. Attached Figure Description

[0027] Figure 1 This is a schematic diagram of the structure of a vapor deposition reactor according to one embodiment of the present invention.

[0028] Explanation of reference numerals in the attached drawings: 10, furnace body; 11, first furnace wall; 12, second furnace wall; 121, second outlet; 13, heating chamber; 20, container; 21, front side wall; 22, reaction chamber; 23, rear side wall; 231, first outlet; 31, first inlet channel; 32, second inlet channel; 33, outlet channel; 34, flow regulating unit; 41, first pressure gauge; 42, second pressure gauge; 43, first differential pressure gauge; 44, second differential pressure gauge; 45, on / off valve; 51, first pressure measuring tube; 52, second pressure measuring tube; 53, third pressure measuring tube; 531, first end; 532, pressure measuring part; 533, second end; 54, fourth pressure measuring tube; 55, fifth pressure measuring tube; 56, sixth pressure measuring tube; 57, seventh pressure measuring tube; 61, heater; 62, insulation felt. Detailed Implementation

[0029] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0030] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "or / and" as used herein includes any and all combinations of one or more of the associated listed items.

[0031] This invention provides a vapor deposition apparatus for performing chemical vapor deposition (CVD) reactions. CVD reactions involve depositing a thin film onto the surface of a specific object under certain temperature and pressure conditions, whereby the deposited film is the final reaction product.

[0032] See Figure 1The chemical vapor deposition (CVD) apparatus includes a furnace body 10, a container 20, a first inlet channel 31, an outlet channel 33, a heater 61, and an insulation felt 62. The furnace body 10 forms a furnace cavity; the container 20, heater 61, and insulation felt 62 are disposed within the furnace cavity. The container 20 forms a reaction chamber 22, which is used to contain the reactant carrier. With the container 20 disposed within the furnace cavity, the furnace cavity outside the container 20 forms a heating chamber 13. The heating chamber 13 and insulation felt 62 are located within the heating chamber 13. The heater 61 heats the reaction chamber 22 to provide a suitable temperature for the CVD reaction, and the insulation felt 62 helps maintain a stable temperature in the reaction chamber 22 to ensure the reaction proceeds smoothly. One end of the first inlet channel 31 extends into the container 20 and connects to the reaction chamber 22, while the other end connects to an external reaction gas source. The external reaction gas source supplies reaction gas into the reaction chamber 22 through the first inlet channel 31. One end of the outlet channel 33 connects the reaction chamber 22 and the heating chamber 13, while the other end connects to the outside of the furnace body 10. Reaction gas that flows through the reaction chamber 22 but does not participate in the reaction (hereinafter referred to as excess reaction gas) and gas in the heating chamber 13 can be discharged to the outside of the furnace body 10 through the outlet channel 33. The outlet channel 33 and the outside of the furnace body 10 can form a low-pressure region of vacuum or near vacuum. The outlet channel 33 exerts a suction effect on the heating chamber 13 and the reaction chamber 22, so excess reaction gas and gas in the heating chamber 13 are drawn out of the furnace body 10 along the outlet channel 33. The reactant carrier can be a substrate or a base plate, the container 20 can be a graphite crucible, and the heater 61 can be a graphite heater 61.

[0033] Existing chemical vapor deposition (CVD) reactors suffer from problems such as easily damaged heaters and reduced insulation performance and shortened lifespan of the insulation felt. These problems are primarily caused by the reaction gases entering the heating chamber and reacting under the heater's heat, forming a deposited film on the heater and insulation felt surfaces. The deposited film and the heater have different coefficients of thermal expansion; repeated heating and cooling cycles can easily cause the heater to break, and the deposited film covering the insulation felt reduces its performance.

[0034] Therefore, the vapor deposition reactor of this invention also includes a differential pressure regulating unit, which includes at least a first regulating unit. The first regulating unit can regulate the difference between the gas pressure in the reaction chamber 22 and the gas pressure outside the outlet channel 33, thereby adjusting the gas pressure P in the reaction chamber 22. 反应腔22 The external air pressure P of the outlet channel 33 is greater than the external air pressure P. 外侧 On the other hand, it increases the pressure difference ΔP1 between the inside of the reaction chamber 22 and the outside of the outlet channel 33 (ΔP1 = P 反应腔22 -P 外侧The pressure difference ΔP1 can cause excess reactant gas to flow outward from the outlet channel 33, thus moving away from the reaction chamber 22 and the heating chamber 13. This prevents excess reactant gas from flowing back into the heating chamber 13 after being discharged through the outlet channel 33, ensuring that excess reactant gas will not undergo a vapor deposition reaction in the heating chamber 13. This also prevents the formation of a deposition film on the surfaces of the heater 61 and the insulation felt 62, which would reduce the reliability and lifespan of the heater 61 and the insulation felt 62.

[0035] Specifically, the first adjustment unit can adjust the flow area of ​​the outlet channel 33, which is the minimum cross-sectional area of ​​the outlet channel 33. According to the pressure control empirical formula P=Q / S, where P is the gas pressure, Q is the gas inlet flow rate, and S is the gas extraction velocity, increasing the gas extraction velocity S will reduce the gas pressure P when the gas flow rate Q is constant. When the external reaction gas source supplies reaction gas to the reaction chamber 22 at a stable flow rate through the first inlet channel 31, and the excess reaction gas and gas from the heating chamber 13 flow through the outlet channel 33, the total flow rate is stable. The gas inlet flow rate Q includes the gas flow rate at the first inlet channel 31. When the first adjustment unit is set to reduce the flow area of ​​the outlet channel 33, according to the principle of fluid continuity, the velocity of the excess reaction gas extracted from the heating chamber 13 and the reaction chamber 22 through the outlet channel 33 increases, that is, the gas velocity outside the outlet channel 33 increases. The gas velocity outside the outlet channel 33 is equivalent to S, so the gas pressure outside the outlet channel 33 decreases, and the gas pressure outside the outlet channel 33 is equivalent to P.

[0036] Optionally, the first regulating unit is a first air valve, which has an adjustable opening and is connected in series with the outlet channel 33. The flow area of ​​the outlet channel 33 is the opening size of the first air valve. Specifically, the first air valve can be a butterfly valve.

[0037] Optionally, the pressure difference ΔP1 can be adjusted to a range of 10~100Pa by adjusting the first adjustment unit.

[0038] Optionally, refer again Figure 1 The furnace body 10 includes a first furnace wall 11 and a second furnace wall 12 that are opposite to each other and spaced apart. The furnace cavity is formed between the first furnace wall 11 and the second furnace wall 12. The container 20 includes a front side wall 21 and a rear side wall 23 that are opposite to each other and spaced apart. The reaction chamber 22 is formed between the front side wall 21 and the rear side wall 23. The end of the first inlet channel 31 that is relatively far away from the external reaction gas source passes through the first furnace wall 11 and the front side wall 21 and extends into the reaction chamber 22. The rear side wall 23 has a first outlet 231 that connects the heating chamber 13 and the outlet channel 33.

[0039] With this configuration, the reactive gases form a uniform flow field within the reaction chamber 22. The flow direction of the reactive gases entering the reaction chamber 22 from the first inlet channel 31 is approximately the same as the flow direction of the reactive gases leaving the reaction chamber 22 from the first outlet 231. This avoids the reactive gases changing direction within the reaction chamber 22, which helps to improve the uniformity of the flow field. Consequently, the quality of the chemical vapor deposition reaction products and the uniformity of the film thickness are improved within the reaction chamber 22.

[0040] Further, see Figure 1 The second furnace wall 12 of the furnace body 10 has a second outlet 121 that connects the heating chamber 13 and the outlet channel 33. The first outlet 231 and the heating chamber 13 are located inside the second outlet 121, and the outlet channel 33 is located outside the second outlet 121. The first inlet channel 31, the first outlet 231, the second outlet 121 and the outlet channel 33 are arranged sequentially along a preset straight line direction. The first inlet channel 31 and the outlet channel 33 are both straight-line extending channels.

[0041] With this configuration, the reactive gas can flow sequentially through the first inlet channel 31, the reaction chamber 22, the first outlet 231, the second outlet 121, and the outlet channel 33 with lower resistance. The flow field of the reactive gas in the reaction chamber 22 is more uniform and the flow velocity changes less. At the same time, the reactive gas diffuses more uniformly from the flow field in the reaction chamber 22 to the surrounding area, and ultimately the reactive gas can uniformly occupy the entire space of the reaction chamber 22.

[0042] Furthermore, in some embodiments, the vapor deposition reactor further includes a second inlet channel 32, see [reference]. Figure 1 One end of the second inlet channel 32 extends into the furnace body 10 and connects to the heating chamber 13, while the other end is used to connect to an external protective gas source.

[0043] With this configuration, an external protective gas source can supply protective gas into the heating chamber 13 through the second inlet channel 32. The protective gas can be an inert gas, such as argon. The protective gas does not participate in the chemical vapor deposition reaction; its function is to form a protective atmosphere within the heating chamber 13. When the reactive gas seeps out of the container 20 and diffuses into the heating chamber 13, the protective atmosphere can dilute the concentration of the reactive gas within the heating chamber 13, thereby inhibiting the deposition reaction of the reactive gas within the heating chamber 13. Under the protection of the protective atmosphere, it is difficult for a deposited film to form on the outer side of the container 20, the heater 61, and the surface of the insulation felt 62.

[0044] Further, see Figure 1 The differential pressure regulating unit also includes a flow regulating unit 34, which regulates the flow rate of gas entering the heating chamber 13 through the second inlet channel 32. The flow regulating unit 34 can regulate the flow rate of the protective gas entering the heating chamber 13. Specifically, during the vapor deposition reaction in the reaction chamber 22, it is necessary to ensure the internal gas pressure P of the heating chamber 13.加热腔13 Greater than P 反应腔22 .

[0045] With this configuration, a pressure difference ΔP2 (ΔP2 = P) is formed between the heating chamber 13 and the reaction chamber 22. 加热腔13 -P 反应腔22 The pressure difference ΔP2 can suppress the leakage of reaction gas from the reaction chamber 22 into the container 20, while maintaining a high concentration of protective gas in the heating chamber 13 to effectively dilute the leakage reaction gas, thus solving the problem of the formation of a deposited film of reaction gas on the outside of the container 20, the heater 61 and the surface of the insulation felt 62.

[0046] Optionally, by adjusting the flow regulating unit 34, the gas flow rate of the second inlet channel 32 can be set to a range of 10-150 standard liters per minute, and the pressure difference ΔP2 can be set to a range of 100-1000 Pa. With this configuration, the protective gas can sufficiently dilute the concentration of the reactant gas within the heating chamber 13 and provide effective protection.

[0047] In some embodiments, the differential pressure regulating unit further includes a second regulating unit, which is used to regulate the flow rate of the gas entering the reaction chamber 22 through the first inlet channel 31. That is, the second regulating unit can regulate the flow rate of the reaction gas entering the reaction chamber 22.

[0048] Optionally, the gas pressure P in reaction chamber 22 can be adjusted by regulating the second regulating unit. 反应腔22 The external air pressure P of the outlet channel 33 is greater than the external air pressure P. 外侧 , to increase the gas pressure P in reaction chamber 22 反应腔22 The internal air pressure P of heating chamber 13 shall not exceed 加热腔13 And control the gas pressure P in reaction chamber 22 反应腔22 The range is between 1000 and 20000 Pa.

[0049] With this configuration, the second regulating unit can precisely supply the reaction gas into the reaction chamber 22 according to the set flow rate, ensuring that the gas required for the reaction is sufficient and without waste. By maintaining the gas pressure inside the reaction chamber 22, the gas phase deposition reaction is kept under suitable pressure difference conditions. When the pressure difference ΔP2 is large, the flow rate of the reaction gas entering the reaction chamber 22 can be appropriately increased, thereby appropriately increasing the gas pressure inside the reaction chamber 22, and further increasing the pressure difference ΔP1 between the inside of the reaction chamber 22 and the outside of the outlet channel 33. This further prevents excess reaction gas from turning around and flowing back to the heating chamber 13 along the outlet channel 33.

[0050] See again Figure 1The vapor deposition reactor also includes a first pressure gauge 41, a second pressure gauge 42, a first pressure measuring tube 51, and a second pressure measuring tube 52. The first pressure gauge 41 is connected to the first pressure measuring tube 51, and the second pressure gauge 42 is connected to the second pressure measuring tube 52. One end of the first pressure measuring tube 51 extends into the furnace body 10 and the container 20, thereby connecting the reaction chamber 22. One end of the second pressure measuring tube 52 extends to the outside of the outlet channel 33. The gas pressure is equal at all points within the cavity of the first pressure measuring tube 51, and the gas pressure within the first pressure measuring tube 51 is equal to the gas pressure P within the reaction chamber 22. 反应腔22 The air pressure is equal at all points within the cavity of the second pressure measuring tube 52, and the air pressure inside the second pressure measuring tube 52 is equal to the air pressure P outside the outlet channel 33. 外侧 .

[0051] With this configuration, the first pressure gauge 41 indirectly measures the gas pressure P inside the reaction chamber 22 by measuring the gas pressure inside the first pressure measuring tube 51. 反应腔22 The second pressure gauge 42 indirectly measures the air pressure P outside the outlet channel 33 by measuring the air pressure inside the second pressure measuring tube 52. 外侧 .

[0052] Optionally, there are multiple first pressure gauges 41, each connected to a first pressure measuring tube 51 and having a different range; there are multiple second pressure gauges 42, each connected to a second pressure measuring tube 52 and having a different range.

[0053] This configuration expands the measurable range of gas pressure inside the reaction chamber 22 and outside the outlet channel 33. For example, under a new reaction condition, the gas pressure inside the reaction chamber 22 increases compared to the previous reaction condition. In this case, the first pressure gauge 41 with a larger range can be activated to measure the gas pressure inside the reaction chamber 22 under the new reaction condition. The gas pressure inside the reaction chamber 22 and outside the outlet channel 33 can be accurately measured under different reaction conditions.

[0054] Furthermore, the vapor deposition reactor also includes a first differential pressure gauge 43, a second differential pressure gauge 44, and a third pressure measuring tube 53. The first differential pressure gauge 43 connects to the first pressure measuring tube 51 and the second pressure measuring tube 52. The first differential pressure gauge 43 can compare the gas pressure inside the first pressure measuring tube 51 and the second pressure measuring tube 52, and obtain the difference between the gas pressure inside the first pressure measuring tube 51 and the gas pressure inside the second pressure measuring tube 52. This difference is equal to the pressure difference ΔP1 between the inside of the reaction chamber 22 and the outside of the outlet channel 33. One end of the third pressure measuring tube 53 extends into the furnace body 10 and connects to the heating chamber 13. The second differential pressure gauge 44 connects the first pressure measuring tube 51 and the third pressure measuring tube 53. The gas pressure at the connection between the third pressure measuring tube 53 and the second differential pressure gauge 44 is equal to the gas pressure P inside the heating chamber 13. 加热腔13The second differential pressure gauge 44 can compare the air pressure inside the first pressure measuring tube 51 and the air pressure inside the third pressure measuring tube 53, and obtain the difference between the air pressure inside the first pressure measuring tube 51 and the air pressure inside the third pressure measuring tube 53. This difference is equal to the pressure difference ΔP2 between the heating chamber 13 and the reaction chamber 22.

[0055] Specifically, see Figure 1 The vapor deposition reactor also includes a fourth pressure measuring tube 54, a fifth pressure measuring tube 55, a sixth pressure measuring tube 56, a seventh pressure measuring tube 57, and an on / off valve 45. A first differential pressure gauge 43 is connected to the first pressure measuring tube 51 via the fourth pressure measuring tube 54, and the gas pressure inside the fourth pressure measuring tube 54 is equal to the gas pressure inside the first pressure measuring tube 51. The first differential pressure gauge 43 is connected to the second pressure measuring tube 52 via the fifth pressure measuring tube 55, and the gas pressure inside the fifth pressure measuring tube 55 is equal to the gas pressure inside the second pressure measuring tube 52. The third pressure measuring tube 53 includes a first end 531, a pressure measuring section 532, and a second end 533, which extend along the third pressure measuring tube 53. The directions are set sequentially. The first end 531 extends into the furnace body 10 to connect with the heating chamber 13. The second differential pressure gauge 44 is connected to the first pressure measuring tube 51 through the sixth pressure measuring tube 56. The air pressure in the sixth pressure measuring tube 56 is equal to the air pressure in the first pressure measuring tube 51. The second differential pressure gauge 44 is connected to the third pressure measuring tube 53 through the seventh pressure measuring tube 57. The seventh pressure measuring tube 57 is connected to the pressure measuring part 532. The second end 533 is connected to the second pressure measuring tube 52. The on / off valve 45 is set between the pressure measuring part 532 and the second end 533. During the chemical vapor deposition reaction, the on / off valve 45 is closed, and the pressure measuring section 532 and the second end 533 are in a blocked state to prevent the protective gas inside the heating chamber 13 from leaking out after flowing through the pressure measuring section 532, the on / off valve 45, the second end 533 and the second pressure measuring tube 52 in sequence, and to prevent the gas pressure inside the heating chamber 13 from decreasing. The first end 531, the pressure measuring section 532 and the seventh pressure measuring tube 57 are connected, so the gas pressure inside the seventh pressure measuring tube 57 is equal to the gas pressure at the pressure measuring section 532, equal to the gas pressure at the first end 531 and equal to the gas pressure inside the heating chamber 13. The gas pressure at the second end 533 is equal to the gas pressure inside the second pressure measuring tube 52 and equal to the gas pressure outside the outlet channel 33.

[0056] Before the chemical vapor deposition reaction begins, the on / off valve 45 is in the open state. The on / off valve 45 can be connected to an external suction device, which can exert a suction effect on the on / off valve 45. This suction effect can remove the residual gas in the reaction chamber 22, the residual gas in the heating chamber 13, and the residual gas outside the furnace body 10. The residual gas in the reaction chamber 22 can be extracted in two ways. One way is that the residual gas from the reaction chamber 22 flows sequentially through the first pressure measuring tube 51, the fourth pressure measuring tube 54, the first differential pressure gauge 43, the fifth pressure measuring tube 55, the second pressure measuring tube 52, and the second end. After being drawn away from pressure gauge 533 and on / off valve 45, the residual gas from the reaction chamber 22 flows sequentially through the first pressure measuring tube 51, the sixth pressure measuring tube 56, the second differential pressure gauge 44, the seventh pressure measuring tube 57, the pressure measuring part 532, and the on / off valve 45 before being drawn away. The residual gas in the heating chamber 13 flows sequentially through the first end 531, the pressure measuring part 532, and the on / off valve 45 before being drawn away. The residual gas outside the furnace body 10 flows sequentially through the second pressure measuring tube 52, the second end 533, and the on / off valve 45 before being drawn away. With this configuration, the external suction device can draw away all the residual gas from the on / off valve 45 at once.

[0057] The technical features of the above-described embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0058] Those skilled in the art should recognize that the above embodiments are only used to illustrate the present utility model and are not intended to limit the present utility model. Any appropriate changes and variations made to the above embodiments within the scope of the essential spirit of the present utility model shall fall within the scope of protection claimed by the present utility model.

Claims

1. A vapor deposition reactor, characterized in that, include: The furnace body (10) has a furnace cavity inside; A container (20) is disposed in the furnace cavity and has a reaction chamber (22) inside the container (20), and the furnace cavity located outside the container (20) forms a heating chamber (13); The first inlet channel (31) has one end extending into the container (20) and connecting to the reaction chamber (22), and the other end connecting to an external reaction gas source. Outlet channel (33), one end of which is connected to the reaction chamber (22) and the heating chamber (13), and the other end is connected to the outside of the furnace body (10); The differential pressure regulating unit includes at least a first regulating unit, which is used to regulate the flow area of ​​the outlet channel (33).

2. The vapor deposition reactor as described in claim 1, characterized in that, The container (20) includes a front sidewall (21) and a rear sidewall (23) arranged opposite to each other. The reaction chamber (22) is formed between the front sidewall (21) and the rear sidewall (23). The first inlet channel (31) extends into the furnace body (10) and passes through the front sidewall (21). The rear sidewall (23) has a first outlet (231) to connect to the outlet channel (33).

3. The vapor deposition reactor as described in claim 2, characterized in that, The furnace body (10) has a second outlet (121) that connects to the heating chamber (13). The first outlet (231) and the outlet channel (33) are located on the inner and outer sides of the second outlet (121), respectively. The first inlet channel (31), the first outlet (231), the second outlet (121) and the outlet channel (33) are arranged sequentially along a preset straight line direction.

4. The vapor deposition reactor as described in claim 1, characterized in that, The vapor deposition reactor further includes a second inlet channel (32), one end of which is connected to the heating chamber (13), and the other end is used to connect to an external protective gas source.

5. The vapor deposition reactor as described in claim 4, characterized in that, The differential pressure regulating unit further includes a flow regulating unit (34), which is used to regulate the flow rate of gas entering the heating chamber (13) through the second inlet channel (32).

6. The vapor deposition reactor according to any one of claims 1 to 5, characterized in that, The first regulating unit is a first air valve, which has an adjustable opening and is connected in series with the outlet channel (33); and / or, The differential pressure regulating unit further includes a second regulating unit, which is used to regulate the flow rate of gas entering the reaction chamber (22) through the first inlet channel (31).

7. The vapor deposition reactor according to any one of claims 1 to 5, characterized in that, It also includes a first pressure gauge (41) and a second pressure gauge (42), the first pressure gauge (41) being used to measure the air pressure inside the reaction chamber (22), and the second pressure gauge (42) being used to measure the air pressure outside the outlet channel (33).

8. The vapor deposition reactor as described in claim 7, characterized in that, It also includes a first pressure measuring tube (51) and a second pressure measuring tube (52), wherein the first pressure measuring tube (51) extends into the container (20) and communicates with the reaction chamber (22), and the second pressure measuring tube (52) extends to the outside of the outlet channel (33), wherein: There are multiple first pressure gauges (41), each connected to the first pressure measuring tube (51), and each of the multiple first pressure gauges (41) has a different measuring range; and / or, There are multiple second pressure gauges (42), each connected to a second pressure measuring tube (52), and each second pressure gauge (42) has a different measuring range; and / or, The vapor deposition reactor further includes a first differential pressure gauge (43), which is connected to the first pressure measuring tube (51) and the second pressure measuring tube (52).

9. The vapor deposition reactor as described in claim 8, characterized in that, It also includes a third pressure measuring tube (53) and a second differential pressure gauge (44). The third pressure measuring tube (53) extends into the furnace body (10) and connects to the heating chamber (13). The second differential pressure gauge (44) connects the first pressure measuring tube (51) and the third pressure measuring tube (53).

10. The vapor deposition reactor as described in claim 9, characterized in that, The third pressure measuring tube (53) includes a first end (531), a pressure measuring part (532), and a second end (533). The first end (531), the pressure measuring part (532), and the second end (533) are arranged sequentially along the extension direction of the third pressure measuring tube (53). The first end (531) extends into the furnace body (10), the pressure measuring part (532) is connected to the second differential pressure gauge (44), the second end (533) is connected to the second pressure measuring tube (52), and an on / off valve (45) is provided between the pressure measuring part (532) and the second end (533).

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