Gas uniformizing device for etching equipment

By designing a gas equalization device with multiple arc-shaped gas equalization grooves and jet channels in the etching equipment, the problems of uneven gas velocity distribution and eddy currents were solved, achieving uniform gas distribution, improving etching efficiency and stability, and extending the equipment life.

CN224288242UActive Publication Date: 2026-05-26HAICHUANG INTELLIGENT EQUIP (YANTAI) CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
HAICHUANG INTELLIGENT EQUIP (YANTAI) CO LTD
Filing Date
2025-07-25
Publication Date
2026-05-26

AI Technical Summary

Technical Problem

Existing gas equalization devices suffer from uneven gas velocity distribution and eddy current problems in etching equipment, resulting in radial gradient differences in etching rate and local gas pressure fluctuations.

Method used

An air distribution device was designed, comprising an air distribution plate, a base, and a nozzle body. By setting up multiple arc-shaped air distribution grooves and jet channels, the gas can be distributed and buffered multiple times. Alumina ceramic material is used to improve high temperature resistance and corrosion resistance.

Benefits of technology

This achieves uniform gas distribution, improves etching uniformity and efficiency, extends the lifespan of the device, and enhances the stability and precision of the etching process.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model relates to a gas uniformizing device for etching equipment, which comprises a gas uniformizing disc and a base, the gas uniformizing disc is arranged on the base, a first gas inlet channel and a first gas uniformizing groove which are communicated with each other are arranged on the gas uniformizing disc, the first gas uniformizing groove is arranged on a disc surface adjacent to the base, the first gas uniformizing groove is arc-shaped, and the first gas inlet channel is communicated with the first gas uniformizing groove. A plurality of nozzles are installed on the gas uniformizing disc, the nozzles are arranged in the circumferential direction of the gas uniformizing disc, the first gas uniformizing groove is communicated with the nozzles, and a plurality of through holes are formed in the base and correspond to the nozzles. Through the arrangement of the first gas uniformizing groove, the second gas uniformizing groove and the connecting groove, gas can be distributed and buffered for multiple times, so that the gas is sprayed out more uniformly, the problems of non-uniform gas flow velocity distribution and vortex are effectively avoided, and the etching uniformity and efficiency are improved.
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Description

Technical Field

[0001] This utility model relates to the field of etching equipment technology, and specifically to a gas equalization device for etching equipment. Background Technology

[0002] In semiconductor manufacturing, etching is a crucial process. This process generates high-density plasma, which is then delivered to the material to be etched via a gas distribution device. The plasma strikes the surface of the material at high speed, causing physical and chemical reactions with the atoms or molecules on the surface, thereby achieving precise etching.

[0003] Existing gas distribution disks generally consist of a chip and a circular metal disk. If the circular metal disk is configured with a single layer of channels, it will result in uneven gas flow rate distribution and radial gradient differences in etching rate. If symmetrical channels are configured, eddies are easily induced, causing local pressure fluctuations. Utility Model Content

[0004] This invention addresses existing technical problems by providing a gas equalization device for etching equipment.

[0005] The technical solution of this utility model to solve the above-mentioned technical problems is as follows: A gas equalization device for etching equipment includes a gas equalization plate and a base. The gas equalization plate is installed on the base. The gas equalization plate is provided with a first air inlet channel and a first gas equalization groove that are connected. The first gas equalization groove is disposed on the plate surface adjacent to the base. The first gas equalization groove is arc-shaped. A plurality of nozzles are installed on the gas equalization plate. The plurality of nozzles are arranged along the circumference of the gas equalization plate. The first gas equalization groove is connected to the plurality of nozzles. The base is provided with a plurality of through holes, and the through holes correspond to the nozzles.

[0006] Based on the above technical solution, the present invention can be further improved as follows:

[0007] Preferably, the surface of the gas equalization plate is provided with a plurality of second gas equalization grooves and a plurality of connecting grooves. The connecting grooves correspond to the second gas equalization grooves. The second gas equalization grooves are located outside the first gas equalization grooves. The first gas equalization grooves are connected to the second gas equalization grooves through the connecting grooves. The second gas equalization grooves are connected to the nozzle.

[0008] Preferably, the second gas equalization groove is arc-shaped, and a plurality of the second gas equalization grooves are evenly spaced along the circumference of the gas equalization disk.

[0009] Preferably, it also includes a nozzle body, which is installed in the middle of the base. The air distribution plate is provided with a second air intake channel, and the nozzle body is provided with a plurality of first air jet channels. The second air intake channel is connected to the first air jet channels. The plurality of first air jet channels are evenly arranged along the circumference of the nozzle body, and the plurality of first air jet channels extend along the height direction of the nozzle body.

[0010] Preferably, the nozzle body is provided with a plurality of second jet channels, the second air intake channel is connected to the second jet channel, the plurality of second jet channels are evenly arranged along the circumference of the nozzle body, the second jet channels are located outside the first jet channel, and the plurality of second jet channels extend along the height direction of the nozzle body respectively.

[0011] Preferably, the outer wall of the nozzle body is provided with a plurality of third jet channels, the plurality of third jet channels are evenly arranged along the circumference of the nozzle body, and the third jet channels are connected to the second jet channels.

[0012] Preferably, the nozzle body has a recessed cavity, the second air intake channel is connected to the cavity, and the inlets of the first air intake channel and the second air intake channel are both located on the bottom wall of the cavity.

[0013] Preferably, the size of the second jet channel is greater than or equal to the size of the first jet channel.

[0014] Preferably, the air distribution plate, the base, and the nozzle body are all made of alumina ceramic material.

[0015] The beneficial effects of this invention are as follows: By setting up a first gas equalization groove, a second gas equalization groove, and a connecting groove, the gas can undergo multiple distributions and buffering processes, resulting in a more uniform distribution on the gas equalization plate and even spraying. This design effectively avoids problems such as uneven gas velocity distribution and eddies, improving the uniformity and efficiency of etching. Simultaneously, the gas equalization plate, base, and nozzle body, made of alumina ceramic material, possess excellent high-temperature resistance and corrosion resistance, enabling them to adapt to the harsh working environment of etching equipment and extending their service life. Attached Figure Description

[0016] Figure 1 This is a three-dimensional schematic diagram of the gas equalization device of this utility model when the base is removed;

[0017] Figure 2 This is a cross-sectional schematic diagram of the gas equalization device of this utility model;

[0018] Figure 3 This is a cross-sectional schematic diagram of the nozzle body of this utility model.

[0019] The attached diagram is labeled as follows: 10, air distribution plate; 11, first air intake channel; 12, second air intake channel; 13, first air distribution groove; 14, connecting groove; 15, second air distribution groove; 16, nozzle;

[0020] 20. Base;

[0021] 30. Nozzle body; 31. First jet channel; 32. Second jet channel; 33. Third jet channel. Detailed Implementation

[0022] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the protection scope of the present invention.

[0023] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this utility model are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. The terms "vertical," "upper," "lower," "horizontal," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation; therefore, they should not be construed as limitations on this utility model.

[0024] like Figures 1 to 3As shown, this utility model discloses a gas equalization device for etching equipment, including a gas equalization disk 10 and a base 20. The gas equalization disk 10 is mounted on the base 20, and a sealing ring is installed between the gas equalization disk 10 and the base 20. The gas equalization disk 10 has a first air inlet channel 11 and a first gas equalization groove 13 that are connected. The first gas equalization groove 13 is disposed on the disk surface adjacent to the base 20 and is arc-shaped. The gas equalization disk 10 and the base 20 cooperate to allow airflow to flow in the first gas equalization groove 13, thereby achieving the function of gas equalization. Multiple nozzles 16 are installed on the gas equalization disk 10 and are arranged circumferentially along the gas equalization disk 10. The first gas equalization groove 13 is connected to the multiple nozzles 16. The base 20 has multiple through holes, and the through holes correspond to the nozzles 16. When gas enters the gas equalization disk 10 from the first air inlet channel 11, it is guided to the first gas equalization groove 13. Because the first gas equalization groove 13 is designed in an arc shape, the gas will encounter uniform resistance when flowing within the first gas equalization groove 13, thereby achieving initial gas equalization. The equalized gas is then uniformly ejected through multiple nozzles 16, providing a uniformly distributed gas for subsequent etching processes, ensuring etching efficiency and etching quality.

[0025] Furthermore, the gas equalization disk 10 is also provided with multiple second gas equalization grooves 15 and multiple connecting grooves 14 on its surface. The second gas equalization grooves 15 and connecting grooves 14 are disposed on the disk surface adjacent to the base 20, with the connecting grooves 14 corresponding to the second gas equalization grooves 15. The second gas equalization grooves 15 are located outside the first gas equalization groove 13, and the first gas equalization groove 13 is connected to the second gas equalization groove 15 through the connecting grooves 14. The second gas equalization groove 15 is connected to the nozzle 16. Specifically, the second gas equalization grooves 15 are arc-shaped, and multiple second gas equalization grooves 15 are evenly spaced along the circumference of the gas equalization disk 10. The gas is initially equalized in the first gas equalization groove 13, then enters the second gas equalization groove 15 through the connecting grooves 14, is equalized again in the second gas equalization groove 15, and finally is ejected from the nozzle 16. Since the second gas equalization groove 15 is also arc-shaped and evenly spaced along the circumference of the gas equalization disk 10, it helps to form a more uniform airflow distribution in the gas equalization disk 10, further reducing the gas non-uniformity, making the gas ejected from the nozzle 16 more uniform and stable, and improving the accuracy and efficiency of the etching process.

[0026] In this embodiment, three sets of second gas equalization grooves 15 and connecting grooves 14 are evenly arranged around the circumference of the gas equalization disk 10. Each set of second gas equalization grooves 15 cooperates with the corresponding connecting grooves 14 to form a complete gas equalization channel, enabling the gas to gradually reach a uniform state during flow. In addition, this design improves the stability and durability of the gas equalization device, extends the service life of the device, and reduces maintenance costs.

[0027] The gas equalization device for the etching equipment also includes a nozzle body 30, which is mounted in the middle of the base 20. A second air inlet channel 12 is provided on the gas equalization plate 10, and a plurality of first air jet channels 31 are provided on the nozzle body 30. The second air inlet channel 12 communicates with the first air jet channels 31. The plurality of first air jet channels 31 are evenly arranged circumferentially along the nozzle body 30 and extend along the height direction of the nozzle body 30, penetrating the nozzle body 30. Gas passes through the second air inlet channel 12 and then through the gas equalization plate 10, and is guided to the nozzle body 30. Inside the nozzle body 30, the gas is ejected through the plurality of first air jet channels 31. Because the first air jet channels 31 are evenly arranged circumferentially along the nozzle body 30 and extend along the height direction of the nozzle body 30, this helps to form a uniform airflow within the nozzle body 30. Guided by the first jet channel 31, the gas can achieve more precise gas uniformity treatment, ensuring that the gas is ejected evenly and avoiding situations where the local gas pressure is too high or too low, thereby improving the stability and uniformity of the etching process.

[0028] The gas ejected from the first jet channel 31 is on the inner side, while the gas ejected from the nozzle 16 is on the outer side, creating a pressure difference. This allows the axial airflow to diffuse downwards evenly, resulting in a more uniform gas distribution within the etching chamber and thus improving the etching effect. Furthermore, this arrangement helps reduce the generation of eddies and lowers the possibility of localized pressure fluctuations, further enhancing the accuracy and stability of the etching process.

[0029] In this embodiment, the nozzle body 30 is further provided with a plurality of second jet channels 32. These second jet channels 32 are evenly arranged circumferentially along the nozzle body 30, located outside the first jet channel 31. The second jet channels 32 extend along the height direction of the nozzle body 30. In this embodiment, the size of the second jet channel 32 is greater than or equal to the size of the first jet channel 31. The second jet channels 32 are also evenly arranged circumferentially along the nozzle body 30 and located outside the first jet channel 31. Because the size of the second jet channel 32 is greater than or equal to the size of the first jet channel 31, by controlling the orifice diameters of the first jet channel 31 and the second jet channel 32, the gas flow rate in the inner and outer rings is controlled, further promoting uniform gas distribution and allowing for more thorough gas homogenization within the nozzle body 30. Furthermore, the nozzle 16, the second jet channels 32, and the first jet channel 31 form three layers of airflow from the outside in, each layer further homogenizing the gas. This design not only improves gas uniformity but also helps reduce the generation of eddies and lowers the possibility of local pressure fluctuations, thereby ensuring the stability and consistency of the etching process.

[0030] In this embodiment, a plurality of third jet channels 33 are provided on the outer wall of the nozzle body 30. These third jet channels 33 are uniformly arranged along the circumference of the nozzle body 30 and are connected to the second jet channels 32. The third jet channels 33 are arranged radially along the nozzle body 30, changing the gas flow direction from axial to radial, which further promotes uniform gas distribution and creates a more complex and uniform airflow field within the etching equipment. Since the third jet channels 33 are connected to the second jet channels 32, the gas, after being homogenized within the nozzle body 30, is ejected radially through the third jet channels 33, fully mixing with the gas in the etching chamber, thereby ensuring the uniformity and stability of the gas distribution within the etching chamber. This design not only improves the accuracy and efficiency of the etching process but also helps reduce potential local over-etching or under-etching phenomena during the etching process, further improving the quality of semiconductor manufacturing. In addition, the third jet channel 33 on the nozzle body 30 enhances the gas turbulence effect, helps to break up the possible airflow layer, further reduces the generation of eddies, and reduces the possibility of local air pressure fluctuations. While improving gas uniformity, it also enhances the stability and controllability of airflow in the etching equipment, providing a strong guarantee for precise etching in the semiconductor manufacturing process.

[0031] Furthermore, the nozzle body 30 has a recessed cavity, and the second air inlet channel 12 communicates with the cavity. The inlets of the first air jet channel 31 and the second air jet channel 32 are both located on the bottom wall of the cavity. The cavity structure increases the residence time of the gas in the nozzle body 30, giving the gas more opportunities for uniform gas distribution, thereby improving the uniformity of the gas.

[0032] In this embodiment, the gas distribution plate 10, the base 20, and the nozzle body 30 are all made of alumina ceramic material. Alumina ceramic material has advantages such as high strength, high hardness, high wear resistance, high corrosion resistance, and high temperature resistance, enabling the gas distribution device to maintain stable performance in harsh etching environments. At the same time, alumina ceramic material also has good insulation properties and chemical stability, ensuring the safety and reliability of the gas distribution device during the etching process.

[0033] In summary, the gas equalization device of this invention, through the arrangement of a gas equalization plate, a base, and a nozzle body, achieves multiple gas equalization processes, improving gas uniformity and ensuring etching quality. Furthermore, the use of alumina ceramic material ensures the stability and reliability of the device during the etching process.

[0034] The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A gas equalization device for etching equipment, characterized in that, The system includes a gas equalization plate (10) and a base (20). The gas equalization plate (10) is mounted on the base (20). The gas equalization plate (10) is provided with a first air inlet channel (11) and a first gas equalization groove (13) that are connected. The first gas equalization groove (13) is located on the plate surface adjacent to the base (20). The first gas equalization groove (13) is arc-shaped. The gas equalization plate (10) is equipped with a plurality of nozzles (16). The plurality of nozzles (16) are arranged around the circumference of the gas equalization plate (10). The first gas equalization groove (13) is connected to the plurality of nozzles (16). The base (20) is provided with a plurality of through holes, which correspond to the nozzles (16).

2. The gas equalization device for etching equipment according to claim 1, characterized in that, The gas equalization plate (10) is also provided with a plurality of second gas equalization grooves (15) and a plurality of connecting grooves (14) on its surface. The connecting grooves (14) correspond to the second gas equalization grooves (15). The second gas equalization grooves (15) are located outside the first gas equalization groove (13). The first gas equalization groove (13) is connected to the second gas equalization groove (15) through the connecting grooves (14). The second gas equalization groove (15) is connected to the nozzle (16).

3. The gas equalization device for etching equipment according to claim 2, characterized in that, The second gas equalization groove (15) is arc-shaped, and multiple second gas equalization grooves (15) are evenly spaced along the circumference of the gas equalization disk (10).

4. The gas equalization device for etching equipment according to claim 1, 2, or 3, characterized in that, It also includes a nozzle body (30), which is installed in the middle of the base (20). The air distribution plate (10) is provided with a second air intake channel (12). The nozzle body (30) is provided with a plurality of first air jet channels (31). The second air intake channel (12) is connected to the first air jet channel (31). The plurality of first air jet channels (31) are evenly arranged around the nozzle body (30). The plurality of first air jet channels (31) extend along the height direction of the nozzle body (30).

5. The gas equalization device for etching equipment according to claim 4, characterized in that, The nozzle body (30) is provided with a plurality of second jet channels (32), the second air intake channel (12) is connected to the second jet channel (32), the plurality of second jet channels (32) are evenly arranged along the circumference of the nozzle body (30), the second jet channel (32) is located outside the first jet channel (31), and the plurality of second jet channels (32) extend along the height direction of the nozzle body (30).

6. The gas equalization device for etching equipment according to claim 5, characterized in that, The nozzle body (30) has a plurality of third jet channels (33) on its outer wall. The plurality of third jet channels (33) are evenly arranged along the circumference of the nozzle body (30). The third jet channels (33) are connected to the second jet channel (32).

7. The gas equalization device for etching equipment according to claim 6, characterized in that, The size of the second jet channel (32) is greater than or equal to the size of the first jet channel (31).

8. The gas equalization device for etching equipment according to claim 5, characterized in that, The nozzle body (30) is provided with a recessed cavity, the second air intake channel (12) is connected to the cavity, and the entrances of the first air intake channel (31) and the second air intake channel (32) are both located on the bottom wall of the cavity.

9. The gas equalization device for etching equipment according to claim 4, characterized in that, The air distribution plate (10), the base (20) and the nozzle body (30) are all made of alumina ceramic material.