A nickel metal clamp fixture
By designing a nickel metal fixture, a sealing layer is formed by a nickel base plate, side nickel plates, and inner nickel plate, which solves the problem that the existing nickel mesh structure cannot isolate the carbon surface of the wafer, and realizes uniform etching and reusability of the wafer.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- 湖南金博碳基材料研究院有限公司
- Filing Date
- 2024-06-20
- Publication Date
- 2026-05-29
AI Technical Summary
Existing nickel mesh structures cannot effectively isolate the carbon surface of the wafer from the corrosive environment, resulting in uneven corrosion, affecting wafer quality, increasing costs, and making them unrecyclable.
Design a nickel metal fixture tooling, including a nickel crucible, a nickel base plate, side nickel plates and an inner nickel plate, forming a sealing layer to isolate the carbon surface of the wafer from the corrosion environment, and to perform corrosion only on the silicon surface.
Uniform etching of the wafer is achieved, ensuring that the wafer can be reused as a seed wafer, thus reducing costs.
Smart Images
Figure CN224303403U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of tooling technology, specifically to a nickel metal clamping tooling. Background Technology
[0002] Currently, the main methods for silicon carbide growth include vapor transport (PVT), liquid phase epitaxy (LPE), and chemical vapor deposition (CVD). After growth, the ingots need to be cut, ground, and polished to obtain wafers for subsequent device manufacturing and seed crystals for repeated crystal growth. The quality of the grown crystals is mainly judged by randomly inspecting wafers or seed crystals to characterize dislocations and defects. Currently, the main methods are optical diffraction counting and chemical etching counting. Due to the instability of optical diffraction results, it is not currently used as a standard in the industry; instead, high-temperature potassium hydroxide etching is used for machine microscopic observation and counting.
[0003] The common chemical etching method involves heating molten potassium hydroxide in a nickel crucible, with a nickel mesh placed inside to separate the wafer from the crucible bottom (to prevent excessive heat conduction and over-etching). During etching, the high-temperature molten potassium hydroxide encapsulates and etches the wafer. However, the nickel mesh has an open structure and cannot tightly adhere to the wafer edges, allowing molten potassium hydroxide to easily seep in from the edges and contact the wafer's carbonized surface. Furthermore, the contact between the nickel mesh and the wafer is point or line contact, failing to achieve surface sealing and effectively isolating the wafer's carbonized surface from the etching environment. During etching, the wafer is prone to warping and deformation due to heat, and the nickel mesh cannot follow suit, further exacerbating the penetration of the etching solution.
[0004] The etching process causes corrosion on both the silicon and carbon surfaces of the wafer, rendering the etched wafer unusable for seed crystal growth, resulting in high costs and making it impossible to recycle the etched wafer. Utility Model Content
[0005] The technical problem to be solved by this utility model is to provide a nickel metal clamping fixture.
[0006] The technical solution adopted by this utility model to solve its technical problem is:
[0007] A nickel metal fixture includes a nickel crucible, a nickel base plate inside the nickel crucible, a side nickel plate on the side of the nickel base plate, and an inner nickel plate on the inner side of the side nickel plate.
[0008] In one embodiment, the nickel base plate is a circular nickel base plate.
[0009] In one embodiment, the side nickel plate is a circular side nickel plate, and the diameter of the side nickel plate is larger than the diameter of the nickel base plate.
[0010] In one embodiment, the inner nickel plate is an annular inner nickel plate, and the outer ring of the annular inner nickel plate is fixedly connected to the inner wall of the side nickel plate.
[0011] In one embodiment, the side nickel plate is detachably connected to the nickel base plate.
[0012] In one embodiment, the diameter of the side nickel plate is smaller than the diameter of the nickel crucible.
[0013] Compared with the prior art, the beneficial effects of this utility model are as follows:
[0014] This invention uses a nickel base plate, side nickel plates, and inner nickel plates to form a nickel metal fixture. Under a certain mechanical force, the smooth nickel base plate and the lower surface of the wafer can form a sealing layer, isolating the carbon surface of the wafer from the external environment of the fixture. This prevents the high-temperature molten potassium hydroxide from contacting the protected carbon surface, and only produces a corrosion effect on the exposed silicon surface, so that the wafer can be reused as a seed crystal after corrosion. Attached Figure Description
[0015] Figure 1 This is a schematic diagram of the overall structure of Embodiment 1 of the present invention;
[0016] Figure 2 This utility model Figure 1 A schematic diagram of the nickel base plate, side nickel plates, and inner nickel plate structure.
[0017] In the diagram: 10. Nickel crucible, 11. Nickel base plate, 12. Side nickel plate, 13. Inner nickel plate. Detailed Implementation
[0018] The present invention will be further described below with reference to the accompanying drawings and embodiments. Example 1
[0019] like Figure 1-2 As shown, this embodiment includes a nickel crucible 10, a nickel bottom plate 11 is provided inside the nickel crucible 10, a side nickel plate 12 is provided on the side of the nickel bottom plate 11, and an inner nickel plate 13 is provided on the inner side of the side nickel plate 12.
[0020] In this embodiment, the nickel base plate 11 is a circular nickel base plate; the side nickel plate 12 is a circular side nickel plate, and the diameter of the side nickel plate 12 is larger than the diameter of the nickel base plate 11; the diameter of the side nickel plate 12 is smaller than the diameter of the nickel crucible 10; the inner nickel plate 13 is an annular inner nickel plate, and the outer ring of the annular inner nickel plate 13 is fixedly connected to the inner wall of the side nickel plate 12, thereby realizing the detachable connection between the side nickel plate 12 and the nickel base plate 11.
[0021] Thus, the nickel base plate 11 is placed inside the nickel crucible 10, and the etched wafer is placed on the nickel base plate 11. Then, the side nickel plate 12 is fitted around the nickel base plate 11, while the inner nickel plate 13 covers the edge of the etched wafer. As a result, during the etching process, the high-temperature molten potassium hydroxide cannot contact the protected carbon surface (i.e., the carbon surface between the nickel base plate 11 and the etched wafer), and the etching effect is only produced on the exposed silicon surface of the etched wafer, so that the wafer can be reused as a seed crystal after etching.
[0022] Thus, a nickel metal fixture is formed by the nickel base plate 11, the side nickel plate 12, and the inner nickel plate 13. Under the action of a certain mechanical force, the smooth nickel base plate 11 and the wafer surface can form a sealing layer, which isolates the carbon surface of the wafer from the external environment of the fixture. This prevents the high-temperature molten potassium hydroxide from contacting the protected carbon surface and only produces a corrosion effect on the exposed silicon surface, so that the wafer can be reused as a seed crystal after corrosion.
[0023] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this utility model, and are not intended to limit it. Although the technical solutions of this utility model have been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the various embodiments of this utility model.
Claims
1. A nickel metal clamping fixture, characterized in that: It includes a nickel crucible (10), a nickel bottom plate (11) is provided inside the nickel crucible (10), a side nickel plate (12) is provided on the side of the nickel bottom plate (11), and an inner nickel plate (13) is provided on the inner side of the side nickel plate (12).
2. The nickel metal fixture according to claim 1, characterized in that: The nickel base plate (11) is a circular nickel base plate.
3. The nickel metal fixture according to claim 2, characterized in that: The side nickel plate (12) is a circular side nickel plate, and the diameter of the side nickel plate (12) is larger than the diameter of the nickel base plate (11).
4. The nickel metal fixture according to claim 3, characterized in that: The inner nickel plate (13) is an annular inner nickel plate, and the outer ring of the annular inner nickel plate (13) is fixedly connected to the inner wall of the side nickel plate (12).
5. The nickel metal fixture according to claim 1, characterized in that: The side nickel plate (12) is detachably connected to the nickel base plate (11).
6. The nickel metal fixture according to claim 1, characterized in that: The diameter of the side nickel plate (12) is smaller than the diameter of the nickel crucible (10).