A laminated radial staggered heat spreading silicon stack

By employing a layered radial staggered design and a spiral heat dissipation channel, the problems of uneven heat dissipation of silicon stack and accumulation of welding stress are solved, achieving efficient heat dissipation and compact packaging.

CN224306165UActive Publication Date: 2026-05-29ANSHAN LEADSUN ELECTRONICS

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
ANSHAN LEADSUN ELECTRONICS
Filing Date
2025-06-20
Publication Date
2026-05-29

AI Technical Summary

Technical Problem

Existing silicon stacks use a linear stacking method, resulting in a single heat dissipation channel, concentrated heat, easy module deformation, and accumulation of welding stress.

Method used

The design employs a layered radial staggered structure to form a spiral heat dissipation channel that runs through the entire structure. Multi-directional heat dissipation is achieved through a radial array of heat dissipation holes, and welding stress is reduced by using PCB substrate and brass electrode embedded nuts.

Benefits of technology

It improves heat dissipation efficiency by 40%, reduces multi-layer welding stress, and ensures packaging accuracy within ±0.05mm, achieving efficient heat dissipation and compact packaging.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model relates to the technical field of silicon pile, concretely to a laminated radial staggered heat dissipation silicon pile. Silicon pile is made of electrode assembly and unit assembly axial superposition, two electrode assemblies are located both ends, and multiple unit assemblies are located between two electrode assemblies. The electrode assembly includes electrode end plate, external electrode and diode, the electrode end plate is radially layered annularly and uniformly distributed heat dissipation hole, the diode is radially layered annularly and uniformly distributed fixedly on one side of the electrode end plate, and is staggered with the heat dissipation hole, and the external electrode is fixedly connected on the other side of the electrode end plate. The unit assembly includes unit end plate and diode, the unit end plate is radially layered annularly and uniformly distributed heat dissipation hole, the diode is radially layered annularly and uniformly distributed fixedly on the unit end plate, and is staggered with the heat dissipation hole. The diodes of adjacent electrode assemblies and unit assemblies are circumferentially staggered, and the diodes of two adjacent unit assemblies are circumferentially staggered. Form the spiral heat dissipation channel through the whole, avoid heat concentration, and realize multidirectional heat dissipation through the radial array heat dissipation hole.
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Description

Technical Field

[0001] This utility model relates to the field of silicon stack technology, specifically a stacked radially staggered heat dissipation silicon stack. Background Technology

[0002] Silicon rectifier stacks, as important high-voltage rectifier devices, are widely used in high-voltage power supplies, high-voltage rectifiers, and other equipment. They can perform functions such as rectification and filtering, voltage transformation, and voltage multiplication / boosting in circuits, while indirectly enhancing the system's isolation and protection capabilities through insulation design. A silicon rectifier stack is a modular device for high-power rectification, composed of multiple silicon rectifier diode chips connected in series, parallel, or mixed connections and packaged together. During operation, it utilizes the unidirectional conductivity of diodes to rectify sinusoidal alternating current into unidirectional direct current, ensuring that the current flows in only one direction. In the circuit, the diode characteristics in the silicon rectifier stack are used to prevent reverse current from flowing, protecting other components in the circuit from damage by reverse voltage, thus providing a certain degree of isolation and protection.

[0003] However, existing silicon stacks use a linear stacking method, and the single heat dissipation channel leads to heat concentration, and the accumulation of welding stress can easily cause module deformation. Utility Model Content

[0004] To overcome the shortcomings of the existing technology, this utility model provides a stacked radially staggered heat dissipation silicon stack, forming a spiral heat dissipation channel that runs through the whole to avoid heat concentration; and multi-directional heat dissipation is achieved through radial array heat dissipation holes.

[0005] To achieve the above objectives, the present invention adopts the following technical solution:

[0006] A stacked radially staggered heat dissipation silicon stack is provided, wherein the silicon stack is formed by axially stacking electrode assemblies and unit assemblies, with two electrode assemblies located at both ends and multiple unit assemblies located between the two electrode assemblies; each electrode assembly includes an electrode end plate, an external electrode, and a diode; the electrode end plate has radially layered circumferentially distributed heat dissipation holes, and the diodes are radially layered circumferentially distributed and fixed to one side of the electrode end plate, offset from the heat dissipation holes; the external electrode is fixed to the other side of the electrode end plate; each unit assembly includes a unit end plate and a diode; the unit end plate has radially layered circumferentially distributed heat dissipation holes, and the diodes are radially layered circumferentially distributed and fixed to the unit end plate, offset from the heat dissipation holes; the diodes of adjacent electrode assemblies and unit assemblies are circumferentially staggered, and the diodes of two adjacent unit assemblies are circumferentially staggered.

[0007] Furthermore, the electrode plate uses a PCB substrate as the mounting carrier, and the surface is provided with electrode plate device pads and external electrode pads.

[0008] Furthermore, the pads of the electrode plate device are radially layered and circumferentially distributed, and are arranged radially and alternately with the heat dissipation holes.

[0009] Furthermore, the external electrode pad is located at the center of the electrode plate.

[0010] Furthermore, the unit end plate uses a PCB substrate as a mounting carrier, and the surface is provided with component pads.

[0011] Furthermore, the device pads are radially layered and circumferentially distributed, and are arranged radially and alternately with the heat dissipation holes.

[0012] Furthermore, the external electrode is a brass electrode with a pre-embedded nut.

[0013] Furthermore, it also includes an epoxy resin shell that encapsulates the silicon stack, with the external electrode end exposed above the epoxy resin shell.

[0014] Compared with the prior art, the present invention has at least the following technical effects or advantages:

[0015] 1. Traditional high-voltage silicon stacks require a large number of silicon rectifier chips (diode dies) to be stacked in series along a single axis (similar to "stacking a human pyramid") to improve their withstand voltage capability, with current and heat transfer directions being vertical. This invention features radially layered, circumferentially distributed heat dissipation holes on the electrode end plates and unit end plates, achieving multi-directional heat dissipation through a radial array of heat dissipation holes. The diodes of adjacent electrode components and unit components are arranged circumferentially in an alternating manner, and the diodes of two adjacent unit components are also arranged circumferentially in an alternating manner. The components are radially rotated and staggered, forming a spiral heat dissipation channel that runs through the entire structure.

[0016] 2. The electrode end plate of this utility model uses a PCB substrate as the mounting carrier. The surface is provided with electrode end plate component pads and external electrode pads. The electrode end plate component pads are radially layered and circumferentially evenly distributed, and are arranged radially and alternately with heat dissipation holes. The unit end plate also uses a PCB substrate as the mounting carrier, with component pads on its surface. The component pads are radially layered and circumferentially evenly distributed, and are arranged radially and alternately with heat dissipation holes. The stepped layout of the pads reduces multi-layer soldering stress.

[0017] 3. The brass electrode pre-embedded nut of this utility model is pre-embedded on the electrode end plate for connecting to external circuits to achieve low-impedance external connection.

[0018] 4. This utility model uses an epoxy resin shell to encapsulate the silicon stack. If a special mold is used in conjunction with epoxy resin potting, the encapsulation tolerance can be controlled within ±0.05mm to ensure potting accuracy. Attached Figure Description

[0019] Figure 1 This is a three-dimensional structural diagram of the present invention.

[0020] Figure 2 This is a three-dimensional structural diagram of the epoxy resin shell before encapsulation of this utility model.

[0021] Figure 3 This is a three-dimensional structural diagram of the electrode assembly of this utility model.

[0022] Figure 4 This is a three-dimensional structural diagram of the electrode plate of this utility model.

[0023] Figure 5 This is a three-dimensional structural diagram of the single-sided end plate unit assembly of this utility model.

[0024] Figure 6 This is a three-dimensional structural diagram of the double-sided end plate unit assembly of this utility model.

[0025] Figure 7 This is a three-dimensional structural diagram of the unit end plate of this utility model.

[0026] In the diagram: 1. Electrode assembly; 2. Unit assembly; 3. Epoxy resin shell; 11. Electrode end plate; 12. External electrode; 13. Diode; 14. Electrode end plate device pad; 15. Electrode pad; 16. Heat dissipation hole; 21. Unit end plate; 22. Device pad. Detailed Implementation

[0027] The embodiments of this utility model are described in detail below. To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, and not all embodiments. The following description of at least one exemplary embodiment is merely illustrative and is in no way intended to limit this utility model or its application or use. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this utility model.

[0028] In the description of this utility model, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this utility model and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model.

[0029] In the description of this utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0030] In the description of this utility model, it should be noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the exemplary embodiments according to this utility model. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. Furthermore, it should be understood that when the terms "comprising" and / or "including" are used in this specification, they indicate the presence of features, steps, operations, devices, components, and / or combinations thereof.

[0031] Unless otherwise specifically stated, the relative arrangement, numerical expressions, and values ​​of the components and steps described in these embodiments do not limit the scope of this invention. It should also be understood that, for ease of description, the dimensions of the various parts shown in the drawings are not drawn to actual scale. Techniques, methods, and devices known to those skilled in the art may not be discussed in detail, but where appropriate, such techniques, methods, and devices should be considered part of the specification. In all examples shown and discussed herein, any specific values ​​should be interpreted as merely exemplary and not as limitations. Therefore, other examples of exemplary embodiments may have different values. It should be noted that similar reference numerals and letters in the following drawings denote similar items; therefore, once an item is defined in one drawing, it need not be further discussed in subsequent drawings.

[0032] Furthermore, it should be noted that the use of terms such as "first" and "second" to define components is merely for the purpose of distinguishing the corresponding components. Unless otherwise stated, the above terms have no special meaning and therefore cannot be construed as limiting the scope of protection of this utility model.

[0033] like Figure 1 , Figure 2As shown, a stacked radially staggered heat dissipation silicon stack includes electrode components 1, unit components 2, and an epoxy resin shell 3. The silicon stack is formed by axially stacking the electrode components 1 and unit components 2, with two electrode components 1 located at both ends and multiple unit components 2 located between the two electrode components 1. In this embodiment, there are 15 unit components 2, including one double-sided endplate unit component and 14 single-sided endplate unit components. The epoxy resin shell 3 is a cylindrical body that encapsulates the silicon stack, with the end faces of the external electrodes 12 exposed outside the epoxy resin shell 3.

[0034] like Figure 3 , Figure 4 As shown, the electrode assembly 1 includes an electrode end plate 11, an external electrode 12, and a diode 13. The electrode end plate 11 uses a PCB substrate as a mounting carrier, and its surface is provided with electrode end plate device pads 14 and external electrode pads 15. The electrode end plate 11 has radially layered and circumferentially distributed heat dissipation holes 16, and the electrode end plate device pads 14 are radially layered and circumferentially distributed, with the radial arrangement interspersed with the heat dissipation holes 16. The stepped layout of the electrode end plate device pads 14 reduces multi-layer soldering stress.

[0035] The external electrode pad 15 is located at the center of the electrode end plate 11. The external electrode 12 is made of brass electrode with embedded nuts. The diode 13 is radially and circumferentially evenly fixed on one side of the electrode end plate 11, and is staggered from the heat dissipation hole 16. The external electrode 12 is fixed on the other side of the electrode end plate 11.

[0036] like Figure 5 , Figure 6 , Figure 7 As shown, the unit assembly includes a unit end plate 21 and a diode 13. The unit end plate has radially layered and circumferentially distributed heat dissipation holes 16. The diode 13 is radially layered and circumferentially fixed to the unit end plate 21, and is staggered from the heat dissipation holes 16. The unit end plate 21 uses a PCB substrate as a mounting carrier, and has device pads 22 on its surface. The device pads 22 are radially layered and circumferentially distributed on the unit end plate 21, and are arranged radially and alternately with the heat dissipation holes 16. The stepped layout of the device pads 22 reduces the multi-layer soldering stress.

[0037] like Figure 1 , Figure 2 As shown, the manufacturing process of this utility model is as follows:

[0038] 1. Fabricate electrode assembly 1 and unit assembly 2.

[0039] 2. Stack the components axially. Weld one electrode component 1, 14 single-sided end plate unit components, one double-sided end plate unit component and one electrode component 1 together in sequence. Stack the components in increments of 10° rotation. The diodes 13 of adjacent electrode components 1 and unit components 2 are staggered in the circumferential direction. The diodes 13 of two adjacent unit components 2 are staggered in the circumferential direction.

[0040] 3. The silicon stack is encapsulated in an epoxy resin shell 3. After mold positioning, the epoxy resin is vacuum-filled, cured, and then demolded to form an integrated heat dissipation structure. A special mold is used in conjunction with epoxy resin potting to control the encapsulation tolerance within ±0.05mm. After encapsulation, all other components are inside the epoxy resin shell 3, and the end face of the external electrode 12 is exposed outside the epoxy resin shell 3, achieving low-impedance external connection.

[0041] This invention features radially layered, circumferentially distributed heat dissipation holes 16 on the electrode end plate 11 and unit end plate 21, achieving multi-directional heat dissipation through the radial array of heat dissipation holes 16. The diodes 13 of adjacent electrode assemblies 1 and unit assemblies 2 are arranged in a staggered circumferential configuration, and the diodes 13 of two adjacent unit assemblies 2 are also arranged in a staggered circumferential configuration. The components are radially rotated and stacked in a staggered manner, forming a spiral heat dissipation channel that runs through the entire assembly. This invention is suitable for high-current diode arrays, power modules, and other scenarios requiring efficient heat dissipation and compact packaging. This invention improves heat dissipation efficiency by 40% compared to a linear structure.

[0042] The above description is only a preferred embodiment of the present utility model, but the protection scope of the present utility model is not limited thereto. Any equivalent substitutions or changes made by those skilled in the art within the technical scope disclosed in the present utility model, based on the technical solution and the inventive concept of the present utility model, should be included within the protection scope of the present utility model.

Claims

1. A stacked radially staggered heat dissipation silicon stack, characterized in that: The silicon stack is formed by axially stacking electrode assemblies and unit assemblies, with two electrode assemblies located at both ends and multiple unit assemblies located between the two electrode assemblies; The electrode assembly includes an electrode plate, an external electrode, and a diode. The electrode plate has radially layered and circumferentially distributed heat dissipation holes. The diode is radially layered and circumferentially distributed and fixed to one side of the electrode plate, offset from the heat dissipation holes. The external electrode is fixed to the other side of the electrode plate. The unit component includes a unit end plate and a diode. The unit end plate has radially layered and circumferentially distributed heat dissipation holes. The diode is radially layered and circumferentially distributed and fixed to the unit end plate, and is offset from the heat dissipation holes. The diodes of adjacent electrode assemblies and unit assemblies are arranged alternately, and the diodes of two adjacent unit assemblies are arranged alternately.

2. The stacked radially staggered heat dissipation silicon stack according to claim 1, characterized in that: The electrode plate uses a PCB substrate as the mounting carrier, and the surface is provided with electrode plate device pads and external electrode pads.

3. The stacked radially staggered heat dissipation silicon stack according to claim 2, characterized in that: The pads of the electrode plate device are radially layered and circumferentially evenly distributed, and are arranged radially and alternately with the heat dissipation holes.

4. A stacked radially staggered heat dissipation silicon stack according to claim 2, characterized in that: The external electrode pad is located at the center of the electrode plate.

5. A stacked radially staggered heat dissipation silicon stack according to claim 1, characterized in that: The unit end plate uses a PCB substrate as the mounting carrier, and the surface is provided with component pads.

6. A stacked radially staggered heat dissipation silicon stack according to claim 5, characterized in that: The device's pads are radially layered and circumferentially distributed, and are arranged radially and alternately with the heat dissipation holes.

7. A stacked radially staggered heat dissipation silicon stack according to claim 1, characterized in that: The external electrode uses a brass electrode with a pre-embedded nut.

8. A stacked radially staggered heat dissipation silicon stack according to claim 1, characterized in that: It also includes an epoxy resin housing that encapsulates the silicon stack, with the external electrode end faces exposed by the epoxy resin housing.