Semiconductor cleaning nozzle

Abstract

The utility model discloses a semiconductor cleaning nozzle relates to the related field of cleaning nozzle, to solve the output end of gas and liquid in the same cavity direct mixing in prior art, gas-liquid contact time is short, atomization particle diameter distribution is uneven, influence atomization effect's problem. The clean nozzle inner core and clean nozzle body between along the lower end of gas-liquid mixing cavity form gas-liquid mixing fluid conical acceleration channel, the clean nozzle body inside along clean nozzle inner core lower end forms gas-liquid mixing fluid cylindrical acceleration channel, and gas-liquid mixing fluid cylindrical acceleration channel is communicated with gas-liquid mixing fluid conical acceleration channel, first double helix spare, first aperture plate, second double helix spare, second aperture plate, third double helix spare and third aperture plate are sequentially arranged from top to bottom in the gas-liquid mixing fluid cylindrical acceleration channel, a plurality of gas-liquid mixing fluid through holes are arranged on the first aperture plate, the second aperture plate and the third aperture plate.

Description

Technical Field

[0001] This utility model relates to the field of cleaning nozzles, specifically a semiconductor cleaning nozzle. Background Technology

[0002] Semiconductor manufacturing processes involve complex steps such as photolithography, etching, thin film deposition, and chemical mechanical polishing (CMP), each of which must be performed in an ultra-clean environment. Micron- and even nano-sized particles, metal ions, organic matter, and other contaminants remaining on the wafer surface directly affect the chip's electrical performance, yield, and reliability. For example, in 7nm and below processes, particulate contaminants smaller than 0.1μm can cause transistor leakage or short circuits, while organic residues can hinder the uniform coating of subsequent photoresist. Therefore, efficient and precise cleaning technologies are crucial for ensuring the quality of semiconductor manufacturing.

[0003] Traditional single-fluid nozzles rely on a single liquid (such as deionized water or chemical agents) to achieve atomization through changes in orifice size. However, their atomized particle size is typically above 10 μm, making it difficult to penetrate the microstructures of the wafer surface (such as deep trenches and high aspect ratio vias) for thorough cleaning. Furthermore, single-fluid nozzles are prone to clogging when handling high-viscosity fluids (such as photoresist and bonding adhesives), and their insufficient mechanical impact force results in low removal efficiency for stubborn contaminants (such as silicon carbide particles remaining from CMP). Two-fluid nozzles achieve atomization through the mixing of gas (such as nitrogen or compressed air) and liquid, offering advantages such as smaller droplet size (down to 5 μm), stronger mechanical impact force, and lower chemical consumption, gradually becoming the mainstream technology in the semiconductor cleaning field.

[0004] For example, the Chinese authorized patent with publication number CN 210411219 U (two-fluid nozzle for high-efficiency atomization of essential oils) includes a nozzle sleeve and a nozzle tube connected to the nozzle sleeve. The nozzle sleeve has a negative pressure chamber, the tail of which is connected to the nozzle tube, and the side of which is connected to the liquid suction chamber. The nozzle tube has a high-speed chamber connected to the negative pressure chamber, and the high-speed chamber is a conical cavity. High-pressure gas enters the high-speed chamber from the wide end of the high-speed chamber and is accelerated to form a high-speed jet that is injected into the negative pressure chamber, creating a negative pressure in the negative pressure chamber. The negative pressure chamber with negative pressure attracts liquid through the liquid suction chamber and is ejected through the nozzle opening under the action of the high-speed jet to form a divergent atomized flow.

[0005] While the aforementioned existing technologies can atomize droplets to make them smaller, the gas and liquid are directly mixed in the same cavity, resulting in short gas-liquid contact time and uneven distribution of atomized particle diameter, which affects the spraying effect. Utility Model Content

[0006] The purpose of this invention is to provide a semiconductor cleaning nozzle to solve the problems mentioned in the background art, such as the direct mixing of gas and liquid at the output end in the same cavity, short gas-liquid contact time, uneven distribution of atomized particle diameter, and the impact on spraying effect.

[0007] To achieve the above objectives, this utility model provides the following technical solution: a semiconductor cleaning nozzle, comprising a cleaning nozzle body, a cleaning nozzle inner core assembled inside the cleaning nozzle body, liquid outflow grooves arrayed at the lower end of the outer surface of the cleaning nozzle inner core, a gas-liquid mixing chamber formed between the cleaning nozzle inner core and the cleaning nozzle body along the output end of the liquid outflow grooves, and a gas-liquid mixed fluid conical acceleration channel formed between the cleaning nozzle inner core and the cleaning nozzle body along the lower end of the gas-liquid mixed chamber, wherein the input width of the gas-liquid mixed fluid conical acceleration channel is greater than the output width. The clean nozzle body has a gas-liquid mixed fluid cylindrical acceleration channel formed along the lower end of the inner core of the clean nozzle. The gas-liquid mixed fluid cylindrical acceleration channel is connected to the gas-liquid mixed fluid conical acceleration channel. The gas-liquid mixed fluid cylindrical acceleration channel is provided with a first double helix component, a first orifice plate, a second double helix component, a second orifice plate, a third double helix component, and a third orifice plate in sequence from top to bottom. The first double helix component, the second double helix component, and the third double helix component each have two helical channels. The first orifice plate, the second orifice plate, and the third orifice plate are all provided with an array of several gas-liquid mixed fluid passage holes.

[0008] Preferably, the gas-liquid mixture in the first, second, and third orifice plates has decreasing orifice diameters.

[0009] Preferably, the inner core of the clean nozzle has a liquid inlet chamber at its upper end, a vertically downward liquid channel is formed along the lower end of the liquid inlet chamber, and a lower distribution chamber is formed along the lower end of the liquid channel. Multiple liquid outlet grooves are connected to the lower distribution chamber.

[0010] Preferably, an air pipe is installed on one side of the clean nozzle body, an air inlet chamber is formed between the clean nozzle inner core and the clean nozzle body along the output end of the air pipe, and a gas flow channel is formed between the clean nozzle inner core and the clean nozzle body along the lower end of the air inlet chamber.

[0011] Preferably, a conical converging channel is formed between the inner core of the clean nozzle and the body of the clean nozzle along the gas flow channel and the gas-liquid mixing chamber.

[0012] Preferably, the nozzle body has a centrally located nozzle opening at its lower end face.

[0013] Preferably, a nozzle fixing interface is provided in the center of the upper end face of the inner core of the clean nozzle, and a nozzle fixing groove is formed on the front and rear end faces of the clean nozzle body.

[0014] Compared with the prior art, the beneficial effects of this utility model are:

[0015] (1) In this invention, the gas-liquid mixture is given a swirling direction through the acceleration and breaking structure inside the nozzle, increasing the gas-liquid mixing time and ultimately causing it to impact the orifice plate. This further separates the gas-liquid mixture through the orifice plate, resulting in uniformly sized micro-droplets. By forming ultrapure water into micro-droplets, it can more effectively impact deposits and residues on the surface of wafers and wafer cassettes, greatly improving cleaning efficiency. This solves the problem of direct mixing of gas and liquid at the same cavity, resulting in short gas-liquid contact time, uneven distribution of atomized particle diameter, and reduced spraying effect.

[0016] (2) In this utility model, the gas-liquid mixture on the first, second and third orifice plates has a decreasing aperture, which more effectively reduces the atomized particle size. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of the overall structure of a semiconductor cleaning nozzle according to the present invention;

[0018] Figure 2 This is a schematic diagram of the structure of the clean nozzle inner core of a semiconductor cleaning nozzle according to the present invention;

[0019] Figure 3 This is a top view of a semiconductor cleaning nozzle according to the present invention;

[0020] Figure 4 This is a cross-sectional view at point AA of a semiconductor cleaning nozzle according to the present invention;

[0021] Figure 5 This is a cross-sectional view of the inner core of a semiconductor cleaning nozzle according to the present invention.

[0022] Figure 6 This is a cross-sectional view of the clean nozzle body of a semiconductor cleaning nozzle according to the present invention.

[0023] Figure 7 This is an enlarged view of the structure at point B of a semiconductor cleaning nozzle according to this utility model.

[0024] In the diagram: 1. Clean nozzle inner core; 2. Nozzle fixing interface; 3. Liquid inlet chamber; 4. Liquid channel; 5. Lower distribution chamber; 6. Liquid outflow groove; 7. Clean nozzle body; 8. Air pipe; 9. Air inlet chamber; 10. Gas flow channel; 11. Conical converging channel; 12. Gas-liquid mixing chamber; 13. Conical acceleration channel for gas-liquid mixed fluid; 14. Columnar acceleration channel for gas-liquid mixed fluid; 15. Nozzle; 16. First double helix component; 17. First orifice plate; 18. Second double helix component; 19. Second orifice plate; 20. Third double helix component; 21. Third orifice plate; 22. Gas-liquid mixed fluid through hole; 23. Nozzle fixing groove. Detailed Implementation

[0025] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present utility model. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments.

[0026] Please see Figures 1-7 One embodiment of this utility model is a semiconductor cleaning nozzle, which mainly includes a cleaning nozzle body 7. The cleaning nozzle body 7 is made of a fluorine-containing ultrapure material, and a cleaning nozzle inner core 1 is carefully assembled inside the cleaning nozzle body 7.

[0027] The clean nozzle core 1 is one of the core components of the entire nozzle. A nozzle fixing interface 2 is centrally located on the upper surface of the clean nozzle core 1, allowing for easy installation of the nozzle onto the water spraying pipe. An inlet chamber 3 is formed at the upper end of the inlet chamber 1, providing initial space for the entry of ultrapure water. A vertically downward liquid channel 4 is formed inside the clean nozzle core 1 along the lower end of the inlet chamber 3, allowing ultrapure water to flow smoothly along the liquid channel 4 after passing through the inlet chamber 3. Furthermore, a lower distribution chamber 5 is formed inside the clean nozzle core 1 along the lower end of the liquid channel 4. Multiple liquid outlet grooves 6 are arrayed on the lower end of the outer surface of the clean nozzle core 1, communicating with the lower distribution chamber 5. After initial distribution within the lower distribution chamber 5, the ultrapure water is evenly sprayed out through the liquid outlet grooves 6. The array arrangement of the liquid outflow tank 6 allows ultrapure water to enter the subsequent gas-liquid mixing area in a relatively uniform distribution, laying the foundation for the formation of uniform micro-droplet particles. This effectively avoids differences in cleaning effect caused by uneven distribution of ultrapure water, and improves the uniformity and stability of cleaning.

[0028] A gas pipe 8 is installed on one side of the clean nozzle body 7, through which process gas enters the nozzle. An inlet chamber 9 is formed between the clean nozzle core 1 and the clean nozzle body 7 along the output end of the gas pipe 8, providing space for the process gas to enter and initially diffuse. A gas flow channel 10 is formed between the clean nozzle core 1 and the clean nozzle body 7 along the lower end of the inlet chamber 9, allowing the process gas to flow under pressure along the inlet chamber 9 and the gas flow channel 10. A gas-liquid mixing chamber 12 is formed between the clean nozzle core 1 and the clean nozzle body 7 along the output end of the liquid outlet trough 6, where ultrapure water and process gas are thoroughly mixed. After the ultrapure water is ejected from the liquid outlet trough 6, it interacts with the process gas flowing under pressure into the gas-liquid mixing chamber 12, forming ultrapure water droplets.

[0029] A conical converging channel 11 is formed between the inner core 1 of the clean nozzle and the body 7 of the clean nozzle, along the gas flow channel 10 and the gas-liquid mixing chamber 12. The design of the conical converging channel 11 causes the process gas to gradually converge and its flow velocity to gradually increase during flow, providing favorable kinetic conditions for subsequent thorough mixing with ultrapure water. This design enhances the interaction force between the process gas and ultrapure water, improves mixing efficiency, and ensures more thorough gas-liquid mixing, which is beneficial for forming uniform micro-droplet particles, thereby improving the cleaning effect.

[0030] After mixing, the gas-liquid mixture requires acceleration to enhance its impact force and cleaning ability. A conical acceleration channel 13 for the gas-liquid mixture is formed at the lower end of the gas-liquid mixing chamber 12 between the inner core 1 of the clean nozzle and the body 7. The input width of the conical acceleration channel 13 is greater than its output width. When the gas-liquid mixture passes through the conical acceleration channel 13, the change in channel width, according to fluid dynamics principles, causes an acceleration effect within the channel, providing initial acceleration. This initial acceleration increases the kinetic energy of the gas-liquid mixture, giving it a stronger impact force during subsequent flow, which is beneficial for better impacting particles on the wafer and wafer cassette surface, thus improving cleaning efficiency.

[0031] A gas-liquid mixed fluid cylindrical acceleration channel 14 is formed inside the clean nozzle body 7 along the lower end of the clean nozzle inner core 1. The gas-liquid mixed fluid cylindrical acceleration channel 14 is connected to the gas-liquid mixed fluid conical acceleration channel 13. After preliminary acceleration, the gas-liquid mixed fluid reaches the gas-liquid mixed fluid cylindrical acceleration channel 14. Inside the gas-liquid mixed fluid cylindrical acceleration channel 14, from top to bottom, there are a first double helix 16, a first orifice plate 17, a second double helix 18, a second orifice plate 19, a third double helix 20, and a third orifice plate 21. The first double helix 16, the second double helix 18, and the third double helix 20 each have two helical channels. The first orifice plate 17, the second orifice plate 19, and the third orifice plate 21 are all arrayed with a number of gas-liquid mixed fluid passage holes 22.

[0032] As the gas-liquid mixture flows along the first double-helix component 16, swirling flow occurs within the two helical channels. This swirling flow increases the turbulence, resulting in more thorough gas-liquid mixing. Simultaneously, the centrifugal force generated by the swirling flow helps to further break up larger droplets or bubbles. Subsequently, the gas-liquid mixture passes through the gas-liquid mixture through-holes 22 on the first orifice plate 17, undergoing its first breakup. The gas-liquid mixture through-holes 22 on the first orifice plate 17 disperse and break up the fluid, further reducing the particle size and achieving a more uniform distribution.

[0033] Next, the gas-liquid mixture passes through the second double helix 18, the second orifice plate 19, the third double helix 20, and the third orifice plate 21, achieving a three-stage regulation of the gas-liquid mixture's flow path and breaking it up. The second double helix 18 and the third double helix 20 also generate swirling flow through the helical channels, further enhancing the mixing and breaking up of the fluid. The gas-liquid mixture on the second orifice plate 19 and the third orifice plate 21 continues to be dispersed and broken up through the orifice 22. Furthermore, the orifice diameter of the gas-liquid mixture on the first orifice plate 17, the second orifice plate 19, and the third orifice plate 21 decreases progressively as it passes through each orifice plate. This design gradually enhances the breaking up effect on the gas-liquid mixture as it passes through each stage of the orifice plate, forming finer and more uniform micro-droplet particles, significantly improving the cleaning precision and effectiveness.

[0034] Finally, the gas-liquid mixture is ejected through the nozzle 15 after passing through the hole 22 on the third perforated plate 21. The design of the nozzle 15 enables the gas-liquid mixture to be sprayed onto the surface of the wafer and wafer box at a certain angle and speed, thereby achieving effective cleaning of surface deposits and residual particles.

[0035] Nozzle fixing grooves 23 are formed on the front and rear end faces of the clean nozzle body 7. The nozzle fixing grooves 23 can be used to further fix the nozzle, prevent the nozzle from shaking or shifting during use, and improve the working stability and reliability of the nozzle.

[0036] Working principle: Ultrapure water used in semiconductors enters the clean nozzle through the nozzle fixing interface 2, and process gas enters the nozzle through the gas pipe 8. The interaction force between the ultrapure water and the process gas forms ultrapure water into micro-droplet particles of 0.1um to 3um, which impact the deposits and residue particles on the surface layer of the wafer and wafer cell. Adjusting the pressure of ultrapure water and process gas achieves the best removal effect.

[0037] Ultrapure water is ejected from the liquid outlet tank 6, and the process gas flows along the inlet chamber 9, the gas flow channel 10 and the conical convergence channel 11 under pressure. Ultrapure water and process gas are mixed in the gas-liquid mixing chamber 12.

[0038] 1. When the gas-liquid mixture passes through the gas-liquid mixture conical acceleration channel 13, the input position width of the gas-liquid mixture conical acceleration channel 13 is larger than the output position width of the gas-liquid mixture conical acceleration channel 13, thus initially accelerating the gas-liquid mixture.

[0039] 2. When the gas-liquid mixture reaches the cylindrical acceleration channel 14, it flows along the first double helix 16, generating a swirling flow, and passes through the gas-liquid mixture passage hole 22 on the first orifice plate 17, breaking the gas-liquid mixture for the first time; then it passes through the second double helix 18, the second orifice plate 19, the third double helix 20, and the third orifice plate 21, achieving the effect of regulating the flow path of the gas-liquid mixture and breaking the gas-liquid mixture three times.

[0040] Finally, the gas-liquid mixture passes through the third orifice plate 21, through the hole 22, and is ejected through the nozzle 15.

[0041] It will be apparent to those skilled in the art that this invention is not limited to the details of the exemplary embodiments described above, and that it can be implemented in other specific forms without departing from the spirit or essential characteristics of this invention. Therefore, the embodiments should be considered illustrative and non-limiting in all respects, and the scope of this invention is defined by the appended claims rather than the foregoing description. Thus, it is intended that all variations falling within the meaning and scope of equivalents of the claims be included within this invention. No reference numerals in the claims should be construed as limiting the scope of the claims.

Claims

1. A semiconductor cleaning nozzle, comprising a cleaning nozzle body (7), characterized in that: The clean nozzle body (7) is equipped with a clean nozzle core (1). A liquid outflow groove (6) is arrayed at the lower end of the outer surface of the clean nozzle core (1). A gas-liquid mixing chamber (12) is formed between the clean nozzle core (1) and the clean nozzle body (7) along the output end of the liquid outflow groove (6). A gas-liquid mixed fluid conical acceleration channel (13) is formed between the clean nozzle core (1) and the clean nozzle body (7) along the lower end of the gas-liquid mixed fluid conical acceleration channel (13). The width of the gas-liquid mixed fluid conical acceleration channel (13) at the input position is greater than the width at the output position. A gas-liquid mixed fluid columnar acceleration channel is formed inside the clean nozzle body (7) along the lower end of the clean nozzle core (1). The gas-liquid mixed fluid cylindrical acceleration channel (14) is connected to the gas-liquid mixed fluid conical acceleration channel (13). The gas-liquid mixed fluid cylindrical acceleration channel (14) is provided with a first double helix component (16), a first orifice plate (17), a second double helix component (18), a second orifice plate (19), a third double helix component (20), and a third orifice plate (21) from top to bottom. There are two helical channels in the first double helix component (16), the second double helix component (18), and the third double helix component (20). A number of gas-liquid mixed fluid passage holes (22) are arrayed on the first orifice plate (17), the second orifice plate (19), and the third orifice plate (21).

2. The semiconductor cleaning nozzle according to claim 1, characterized in that: The gas-liquid mixture on the first orifice plate (17), the second orifice plate (19), and the third orifice plate (21) have decreasing apertures through the orifice (22).

3. A semiconductor cleaning nozzle according to claim 1, characterized in that: The inner core (1) of the clean nozzle has an inlet chamber (3) at the upper end. A vertically downward liquid channel (4) is formed inside the inner core (1) of the clean nozzle along the lower end of the inlet chamber (3). A lower distribution chamber (5) is formed inside the inner core (1) of the clean nozzle along the lower end of the liquid channel (4). Multiple liquid outflow grooves (6) are connected to the lower distribution chamber (5).

4. A semiconductor cleaning nozzle according to claim 1, characterized in that: An air pipe (8) is installed on one side of the clean nozzle body (7). An air inlet chamber (9) is formed between the clean nozzle core (1) and the clean nozzle body (7) along the output end of the air pipe (8). A gas flow channel (10) is formed between the clean nozzle core (1) and the clean nozzle body (7) along the lower end of the air inlet chamber (9).

5. A semiconductor cleaning nozzle according to claim 4, characterized in that: The inner core (1) of the clean nozzle and the body (7) of the clean nozzle form a converging channel (11) between the gas flow channel (10) and the gas-liquid mixing chamber (12).

6. A semiconductor cleaning nozzle according to claim 1, characterized in that: The nozzle body (7) has a nozzle (15) centered on its lower end face.

7. A semiconductor cleaning nozzle according to claim 1, characterized in that: The inner core (1) of the clean nozzle has a nozzle fixing interface (2) centrally located on its upper end face, and the front and rear end faces of the clean nozzle body (7) form a nozzle fixing groove (23).

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