Wafer cleaning jig and wafer for indirectly measuring film thickness

Abstract

The utility model provides a piece and cleaning clamp for indirectly measuring wafer coating thickness belongs to film thickness probe measurement technical field. The piece is composed of substrate and mask, the substrate is the silicon waague cut into square, the mask adopts alloy material, is cut into the waague with the same outer size of substrate, the mask is set up square through -hole in the center, and the mask is placed on the substrate and is closely combined with the substrate, the cleaning clamp is U type, and the corresponding vertical slot is set up along the inside two sides of cleaning clamp, and the slot is set up at least two pairs, and the slot width is not less than the thickness of substrate and mask, the slot bottom is not through to the bottom of cleaning clamp, and the height of cleaning clamp is less than the height of substrate or mask. The utility model discloses through structural innovation and process optimization, has outstanding advantages in reducing cost, improving measurement precision, simplifying operation process and enhancing environmental adaptability etc., provides efficient and reliable solution for the indirect measurement of wafer coating thickness.

Description

Technical Field

[0001] This utility model belongs to the field of film thickness probe measurement technology, specifically relating to a wafer and cleaning fixture for indirectly measuring the thickness of wafer coating. Background Technology

[0002] In the fabrication of OLED devices, the quality of the anode thin film directly affects the device's performance and reliability. However, existing technologies still have the following shortcomings in practical applications: traditional film thickness measurement requires direct inspection of the wafer, which is costly, and frequent inspections can lead to material waste and economic burden. Furthermore, direct contact measurement may introduce surface damage, affecting the yield of subsequent wafer processes. Utility Model Content

[0003] This invention proposes a wafer and cleaning fixture for indirectly measuring the thickness of wafer coating. The wafer is used to be coated simultaneously with the wafer, and the wafer is measured. The cleaning fixture is used to clean the wafer to avoid contamination and damage during operation.

[0004] A wafer and cleaning fixture for indirectly measuring wafer coating thickness, characterized in that it includes a wafer and a cleaning fixture. The wafer consists of a substrate and a mask. The substrate is a square silicon wafer. The mask is made of alloy material and is cut into thin slices with the same outer dimensions as the substrate. A square through hole is opened in the center of the mask. The mask is placed on the substrate and fits tightly against the substrate. The cleaning fixture is U-shaped and has corresponding vertical slots on both sides of the inside of the cleaning fixture. There are at least two pairs of slots. The width of the slots is not less than the thickness of the substrate and the mask. The bottom of the slots does not extend to the bottom of the cleaning fixture, and the height of the cleaning fixture is less than the height of the substrate or the mask.

[0005] Furthermore, the aspect ratio of the outer dimensions of the substrate and the mask is 11:8, and the aspect ratio of the square through hole is 31:26. This ratio can not only produce clean and flat metal thin film steps, but also meet the test requirements of sheet resistance and reflectivity of the deposited metal film.

[0006] Furthermore, the flatness of the substrate and the mask is 0.02 mm and the surface roughness is Ra 0.8 μm, so that the substrate and the mask can be tightly bonded.

[0007] In use, insert the mask and substrate of the accompanying film into different slots of the cleaning fixture, place the cleaning fixture into a beaker containing ultrapure alcohol and ensure that the liquid level covers the top of the mask and substrate, and remove it after ultrasonic cleaning.

[0008] The beneficial effects of this invention are as follows: By simultaneously depositing film on the substrate and the wafer and indirectly measuring the film thickness, direct inspection of expensive wafers is avoided, significantly reducing material waste and economic costs. The indirect measurement method reduces direct contact with the wafer surface, effectively preventing surface damage and ensuring the yield of subsequent processes and product reliability. The multi-slot design of the cleaning fixture ensures that the edge of the substrate does not contact the fixture, avoiding cleaning contamination and secondary damage; the non-through bottom and optimized height of the slots allow the cleaning solution to fully cover the coating area while preventing residue, improving cleaning efficiency and the reliability of measurement data. The simultaneous coating process of the substrate and the wafer, along with strict dimensional ratios, ensures a smooth and uniform coating step, meeting the requirements for sheet resistance and reflectivity testing, and achieving standardized measurement. Precise control of the flatness and surface roughness of the substrate and mask ensures a tight fit, reducing coating edge diffusion and improving film quality and measurement accuracy. The slot-type cleaning fixture simplifies the substrate handling process, and combined with ultrasonic cleaning and baking processes, it is easy to operate and reusable, further improving production efficiency. Attached Figure Description

[0009] Figure 1 This is a schematic diagram of the structure of a wafer and cleaning fixture used for indirectly measuring the thickness of wafer coating.

[0010] Figure 2 This is a schematic diagram of the accompanying film structure.

[0011] Figure 3 This is a schematic diagram of the cleaning fixture structure.

[0012] Wherein: 1-mask, 2-substrate, 3-square through hole, 4-cleaning fixture, 41-slot, 5-gap; Detailed Implementation

[0013] Example 1: A wafer and cleaning fixture for indirectly measuring wafer coating thickness, comprising a wafer and a cleaning fixture 4. The wafer consists of a substrate 2 and a mask 1. The substrate 2 is a square silicon wafer. The mask 1 is made of alloy material and cut into a thin sheet with the same external dimensions as the substrate 2, with an aspect ratio of 11:8 for both. A square through-hole 3 is formed in the center of the mask 1, with an aspect ratio of 31:26. This ratio allows for the fabrication of clean and flat metal film steps, and the deposited metal film meets the requirements for sheet resistance and reflectivity testing. The mask 1 is placed on the substrate and tightly adhered to the substrate 2. The flatness of both the substrate 2 and the mask 1 is 0.02 mm, and the surface roughness is Ra 0.8 μm, ensuring a tight fit between the substrate and the mask. The cleaning fixture 4 is U-shaped, with corresponding vertical slots 41 arranged on both sides of the interior. There are four pairs of slots 41. The width of the slots 41 is not less than the thickness of the substrate 2 and the mask 1. The bottom of the slots 41 does not penetrate to the bottom of the cleaning fixture 4, so that after the substrate 2 and the mask 1 are inserted into the slots 41, there is a gap 5 between the substrate 2 and the mask 1 and the bottom surface of the cleaning fixture 4. The height of the cleaning fixture 4 is less than the height of the substrate 2 or the mask 1, so that after the substrate 2 and the mask 1 are inserted into the slots 41, the top of the substrate 2 and the mask 1 is exposed above the cleaning fixture 4.

[0014] In use, insert the mask 1 and substrate 2 of the accompanying wafer into the two pairs of slots 41 of the cleaning fixture 4 respectively. Place the cleaning fixture 4 into a beaker containing ultrapure alcohol and ensure that the liquid level covers the top of the mask 1 and substrate 2. After ultrasonic cleaning for 10 minutes, remove the substrate 2 and bake it in a 90°C oven for 10 minutes to dry it. When inserting and removing the substrate 2, only pinch the edge of the substrate 2. After drying, tightly attach the substrate 2 and mask 1 and perform film deposition together with the wafer. After film deposition, separate the substrate 2 and mask 1. Thin film steps are formed on the substrate 2. Use a step meter to measure the height of the blank substrate 2 and the height of the substrate 2 with thin film steps respectively. The height difference of the thin film steps can accurately reflect the film thickness of the film deposited in the same batch of products.

Claims

1. A wafer preparation and cleaning fixture for indirectly measuring wafer coating thickness, characterized in that... The system includes a wafer support and a cleaning fixture. The wafer support consists of a substrate and a mask. The substrate is a square silicon wafer, and the mask is made of alloy material and cut into thin sheets with the same outer dimensions as the substrate. A square through-hole is opened in the center of the mask. The mask is placed on the substrate and fits tightly against the substrate. The cleaning fixture is U-shaped and has corresponding vertical slots on both sides of the inside of the cleaning fixture. There are at least two pairs of slots. The width of the slots is not less than the thickness of the substrate and the mask. The bottom of the slots does not extend to the bottom of the cleaning fixture, and the height of the cleaning fixture is less than the height of the substrate or the mask.

2. The wafer and cleaning fixture for indirectly measuring wafer coating thickness as described in claim 1, characterized in that... The aspect ratio of the outer dimensions of the substrate and the mask is 11:

8.

3. The wafer and cleaning fixture for indirectly measuring wafer coating thickness as described in claim 1, characterized in that... The flatness of the substrate and the mask is 0.02 mm, and the surface roughness is Ra 0.8 μm.

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