A millimeter-wave broadband impedance modulation power amplifier based on a bandpass structure

Abstract

This utility model discloses a millimeter-wave broadband impedance modulation power amplifier based on a bandpass structure, including a microwave composite board, signal input terminals VIN+ and VIN-, a first MOSFET 5XM1, a second MOSFET 5XM1, a first neutralizing capacitor CN, a second neutralizing capacitor CN, a first signal output terminal Vout-, and a second signal output terminal Vout+. The signal input terminals VIN+ and VIN- are electrically connected to the gates of the first MOSFET 5XM1 and the second MOSFET 5XM1, respectively. The two ends of the first neutralizing capacitor CN are electrically connected to the gate of the first MOSFET 5XM1 and the drain of the second MOSFET 5XM1. The two ends of the second neutralizing capacitor CN are electrically connected to the gate of the second MOSFET 5XM1 and the drain of the first MOSFET 5XM1. The first signal output terminal Vout- is electrically connected to the drain of the first MOSFET 5XM1, and the second signal output terminal Vout+ is electrically connected to the drain of the second MOSFET 5XM1. The technical solution of this utility model can achieve the goals of Ku / Ka band relative bandwidth ≥15%, 6dB backoff efficiency ≥25%, and cost reduction of more than 30%.

Description

Technical Field

[0001] This utility model relates to the field of wireless communication technology, and in particular to a millimeter-wave broadband impedance modulation power amplifier based on a bandpass structure. Background Technology

[0002] Currently, millimeter-wave power amplifiers (PAs) face significant challenges in balancing high bandwidth and high efficiency. Traditional impedance-modulated amplifiers (such as Doherty PAs) employ low-pass π-type traveling-wave networks, whose bandwidth is limited by the ratio of the cutoff frequency to the operating frequency (equation: ).

[0003] The parasitic capacitance of transistors exhibits high Q-value characteristics at high frequencies, resulting in an effective network bandwidth typically less than 10%, which is insufficient to cover the multi-band requirements of satellite communication and terrestrial 5G millimeter-wave convergence. Furthermore, in existing solutions, the parasitic parameters of transistors and the inherent characteristics of low-pass networks jointly lead to low impedance matching efficiency, especially under 6dB power back-off conditions, where efficiency drops significantly (typically <20%). The reliance on discrete component design further increases circuit complexity and manufacturing costs, resulting in bulky devices with low integration. These problems severely restrict the practical application of millimeter-wave power amplifiers in 6G satellite communication terminals, necessitating an innovative solution that balances bandwidth, high efficiency, and miniaturization. Utility Model Content

[0004] The main objective of this invention is to propose a millimeter-wave broadband impedance modulation power amplifier based on a bandpass structure, aiming to solve the problems mentioned in the background art.

[0005] To achieve the above objectives, this utility model proposes a millimeter-wave broadband impedance modulation power amplifier based on a bandpass structure, comprising a microwave composite board, signal input terminals VIN+ and VIN-, a first MOSFET 5XM1, a second MOSFET 5XM1, a first neutralizing capacitor CN, a second neutralizing capacitor CN, a first signal output terminal Vout-, and a second signal output terminal Vout+. The signal input terminals VIN+ and VIN- are arranged side-by-side on both sides of the lower end of the microwave composite board. The first MOSFET 5XM1 and the second MOSFET 5XM1 are arranged side-by-side on both sides of the middle of the microwave composite board. The first neutralizing capacitor CN and the second neutralizing capacitor CN are respectively located at the upper ends of the first MOSFET 5XM1 and the second MOSFET 5XM1. The first signal output terminal Vout- and the second signal output terminal Vout+ are also present. Vout+ is disposed at the upper ends of the first neutralizing capacitor CN and the second neutralizing capacitor CN. The signal input terminals VIN+ and VIN- are electrically connected to the gates of the first MOSFET 5XM1 and the second MOSFET 5XM1, respectively. One end of the first neutralizing capacitor CN is electrically connected to the gate of the first MOSFET 5XM1, and the other end is electrically connected to the drain of the second MOSFET 5XM1. One end of the second neutralizing capacitor CN is electrically connected to the gate of the second MOSFET 5XM1, and the other end is electrically connected to the drain of the first MOSFET 5XM1. The sources of both the first MOSFET 5XM1 and the second MOSFET 5XM1 are electrically connected to ground. The first signal output terminal Vout- is electrically connected to the drain of the first MOSFET 5XM1, and the second signal output terminal Vout+ is electrically connected to the drain of the second MOSFET 5XM1.

[0006] Optionally, both the first MOSFET 5XM1 and the second MOSFET 5XM1 are P-MOSFETs.

[0007] Optionally, the first neutralizing capacitor CN and the second neutralizing capacitor CN are both in the range of 0.02 pF to 0.08 pF.

[0008] Optionally, the first neutralizing capacitor CN and the second neutralizing capacitor CN are both 0.05pF.

[0009] Optionally, the microwave composite board is a multilayer microwave composite board.

[0010] The technical solution of this utility model has the following beneficial effects: Compared with traditional millimeter-wave power amplifiers, this utility model achieves a relative bandwidth of ≥15% (measured at 15.3%) in the Ku / Ka band (24-40GHz) through the synergistic design of a bandpass traveling wave matching network and distributed power combining technology. This is more than 50% higher than that of traditional low-pass networks (<10%), and significantly optimizes the 6dB power back-off efficiency to 26% (traditional solution <20%). Simultaneously, it reduces manufacturing costs by 32% and shrinks the size by 40% through multi-layer microwave composite board integration technology. Actual measurement data verifies that its stability deviation is <5% in an environment of -40℃ to 85℃, supporting satellite communication and 5G millimeter-wave converged networking. It provides an efficient, broadband, and low-cost domestic RF front-end solution for vehicle-mounted, airborne, and space-ground integrated communication scenarios, breaking through the "impossible triangle" of bandwidth, efficiency, and cost in traditional technologies.

[0011] This invention addresses the limitations of traditional millimeter-wave power amplifiers, such as limited bandwidth (<10%) of low-pass π-type traveling wave networks, low 6dB power back-off efficiency (<20%), and high cost and low integration due to discrete components. The invention aims to reconstruct high-frequency impedance characteristics through a bandpass traveling wave matching network, combined with distributed power combining and multilayer microwave composite board integration technology. This achieves a relative bandwidth of ≥15% in the Ku / Ka band (24-40GHz), a 6dB back-off efficiency of ≥25%, and a manufacturing cost reduction of over 30%, providing a high-efficiency, wideband, and compact RF front-end solution for 6G satellite communication terminals. Attached Figure Description

[0012] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.

[0013] Figure 1 This is a schematic diagram of the overall structure of a millimeter-wave broadband impedance modulation power amplifier based on a bandpass structure according to an embodiment of the present invention.

[0014] Figure 2 This is a circuit diagram of a millimeter-wave broadband impedance modulation power amplifier based on a bandpass structure, according to an embodiment of the present invention.

[0015] The realization of the purpose, functional features and advantages of this utility model will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0016] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0017] It should be noted that all directional indicators (such as up, down, left, right, front, back, etc.) in this utility model embodiment are only used to explain the relative positional relationship and movement of each component in a certain specific posture (as shown in the figure). If the specific posture changes, the directional indicator will also change accordingly.

[0018] Furthermore, the technical solutions of the various embodiments can be combined with each other, but this must be based on the ability of those skilled in the art to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be considered that such combination of technical solutions does not exist and is not within the scope of protection claimed by this utility model.

[0019] This invention proposes a millimeter-wave broadband impedance modulation power amplifier based on a bandpass structure.

[0020] like Figure 1 and Figure 2As shown in one embodiment of this utility model, the millimeter-wave broadband impedance modulation power amplifier based on a bandpass structure includes a microwave composite board 101, signal input terminals VIN+102 and VIN-103, a first MOSFET 5XM1104, a second MOSFET 5XM1105, a first neutralizing capacitor CN106, a second neutralizing capacitor CN107, a first signal output terminal Vout-108, and a second signal output terminal Vout+109. The signal input terminal VIN+102 and the signal... Input terminals VIN-103 are arranged side-by-side on both sides of the lower end of the microwave composite board 101. The first MOSFET 5XM1104 and the second MOSFET 5XM1105 are arranged side-by-side on both sides of the middle of the microwave composite board 101. The first neutralizing capacitor CN106 and the second neutralizing capacitor CN107 are respectively located at the upper ends of the first MOSFET 5XM1104 and the second MOSFET 5XM1105. The first signal output terminal Vout-108 and the second signal output terminal Vo... ut+109 are respectively disposed at the upper ends of the first neutralizing capacitor CN106 and the second neutralizing capacitor CN107. The first signal output terminal Vout-108 and the second signal output terminal Vout+109 are respectively electrically connected to the gates of the first MOSFET 5XM1104 and the second MOSFET 5XM1105. One end of the first neutralizing capacitor CN106 is electrically connected to the gate of the first MOSFET 5XM1104, and the other end is electrically connected to the drain of the second MOSFET 5XM1105. One end of the neutralizing capacitor CN107 is electrically connected to the gate of the second MOSFET 5XM1105, and the other end is electrically connected to the drain of the first MOSFET 5XM1104. The sources of both the first MOSFET 5XM1104 and the second MOSFET 5XM1105 are electrically connected to ground. The first signal output terminal Vout-108 is electrically connected to the drain of the first MOSFET 5XM1104, and the second signal output terminal Vout+109 is electrically connected to the drain of the second MOSFET 5XM1105.

[0021] Specifically, both the first MOSFET 5XM1104 and the second MOSFET 5XM1105 are P-MOSFETs.

[0022] Specifically, the first neutralizing capacitor CN106 and the second neutralizing capacitor CN107 both have a size range of 0.02 pF to 0.08 pF.

[0023] Specifically, the first neutralizing capacitor CN106 and the second neutralizing capacitor CN107 are both 0.05pF.

[0024] Specifically, the microwave composite board 101 is a multilayer microwave composite board.

[0025] The core innovation of this utility model lies in achieving a technological breakthrough in high-frequency broadband, high efficiency, and miniaturization through multidisciplinary collaborative optimization. Specific technical solutions include:

[0026] A high-pass component combining a series inductor (L) and a parallel capacitor (Cext) replaces the traditional low-pass π-type structure. By adjusting the sub-network parameters (L=0.3nH, L=0.3nH, Cext=0.1pF), the network characteristics are reconstructed, shifting the usable frequency band to the high-frequency region (24-40GHz). Furthermore, a multi-stage cascaded design (four stages) extends the cutoff frequency range, significantly improving the relative bandwidth to ≥15%. The network's equivalent characteristic impedance (…) It matches the optimal impedance (Zopt) of GaN HEMT transistors, effectively absorbing the effects of parasitic capacitance (Cpar) and reducing the bandwidth limitation imposed by high Q values.

[0027] A multi-transistor (4 groups) parallel output structure is adopted, and broadband power combining is achieved through microstrip line coupling. The network gain flatness (<±1dB) is optimized by combining three-dimensional electromagnetic simulation (HFSS). Each amplifier stage adopts a differential common-source topology, and a neutralizing capacitor (CN=0.05pF) is introduced to compensate for the negative feedback effect of the gate-drain capacitance (Cgd), thereby improving gain stability and bandwidth consistency.

[0028] Based on a multilayer microwave composite board (FR4 substrate + RO4350B high-frequency layer), vertical interconnection of the bandpass network, GaN chip, and control circuit is achieved through blind and buried via technologies, reducing parasitic effects (insertion loss <0.5dB). For thermal design, a metal cavity heat dissipation and vapor chamber cooling scheme is adopted, combined with FloEFD thermal simulation to optimize the chip junction temperature (≤85℃@4W output), ensuring reliability under high power.

[0029] The working principle of this utility model is as follows:

[0030] The input signal undergoes impedance modulation via a bandpass network, then drives a distributed transistor array for power amplification. The synthesized signal is output through a waveguide interface. Network parameters are specified using the formula... Dynamic tuning adapts to different frequency band requirements, ultimately achieving synergistic optimization of high efficiency (6dB backoff ≥25%) and high power (saturation output ≥4W) in both Ku / Ka bands.

[0031] This invention addresses the limitations of traditional millimeter-wave power amplifiers, such as limited bandwidth (<10%) of low-pass π-type traveling wave networks, low 6dB power back-off efficiency (<20%), and high cost and low integration due to discrete components. The invention aims to reconstruct high-frequency impedance characteristics through a bandpass traveling wave matching network, combined with distributed power combining and multilayer microwave composite board integration technology. This achieves a relative bandwidth of ≥15% in the Ku / Ka band (24-40GHz), a 6dB back-off efficiency of ≥25%, and a manufacturing cost reduction of over 30%, providing a high-efficiency, wideband, and compact RF front-end solution for 6G satellite communication terminals.

[0032] The above description is only a preferred embodiment of the present utility model and does not limit the patent scope of the present utility model. All equivalent structural transformations made under the inventive concept of the present utility model using the contents of the present utility model specification and drawings, or direct / indirect applications in other related technical fields, are included within the patent protection scope of the present utility model.

Claims

1. A millimeter-wave broadband impedance modulation power amplifier based on a bandpass structure, characterized in that, The device includes a microwave composite board, signal input terminals VIN+ and VIN-, a first MOSFET 5XM1, a second MOSFET 5XM1, a first neutralizing capacitor CN, a second neutralizing capacitor CN, a first signal output terminal Vout-, and a second signal output terminal Vout+. The signal input terminals VIN+ and VIN- are arranged side-by-side on both sides of the lower end of the microwave composite board. The first MOSFET 5XM1 and the second MOSFET 5XM1 are arranged side-by-side on both sides of the middle of the microwave composite board. The first neutralizing capacitor CN and the second neutralizing capacitor CN are respectively located at the upper ends of the first MOSFET 5XM1 and the second MOSFET 5XM1. The first signal output terminal Vout- and the second signal output terminal Vout+ are respectively located at the first neutralizing capacitor CN. At the upper end of the second neutralizing capacitor CN, the signal input terminals VIN+ and VIN- are electrically connected to the gates of the first MOSFET 5XM1 and the second MOSFET 5XM1, respectively. One end of the first neutralizing capacitor CN is electrically connected to the gate of the first MOSFET 5XM1, and the other end is electrically connected to the drain of the second MOSFET 5XM1. One end of the second neutralizing capacitor CN is electrically connected to the gate of the second MOSFET 5XM1, and the other end is electrically connected to the drain of the first MOSFET 5XM1. The sources of both the first MOSFET 5XM1 and the second MOSFET 5XM1 are electrically connected to ground. The first signal output terminal Vout- is electrically connected to the drain of the first MOSFET 5XM1, and the second signal output terminal Vout+ is electrically connected to the drain of the second MOSFET 5XM1.

2. The millimeter-wave broadband impedance modulation power amplifier based on a bandpass structure according to claim 1, characterized in that, Both the first MOSFET 5XM1 and the second MOSFET 5XM1 are P-MOSFETs.

3. The millimeter-wave broadband impedance modulation power amplifier based on a bandpass structure according to claim 1, characterized in that, The first neutralizing capacitor CN and the second neutralizing capacitor CN both have a size range of 0.02 pF to 0.08 pF.

4. The millimeter-wave broadband impedance modulation power amplifier based on a bandpass structure according to claim 1, characterized in that, The first neutralizing capacitor CN and the second neutralizing capacitor CN are both 0.05pF.

5. The millimeter-wave broadband impedance modulation power amplifier based on a bandpass structure according to claim 1, characterized in that, The microwave composite board is a multi-layer microwave composite board.

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