A novel photovoltaic cell structure

Abstract

This invention discloses a novel photovoltaic cell structure, comprising a lower electrode P-type silicon semiconductor layer and an upper electrode N-type silicon semiconductor layer. One side of the N-type silicon semiconductor layer is a periodically structured three-dimensional surface. A transparent carbon-based electrode material layer is disposed on the three-dimensional structured surface, and the transparent carbon-based electrode material layer is tightly bonded to the three-dimensional structured surface. This novel photovoltaic cell structure enhances the surface light scattering capability and improves its stability and controllability by designing the N-type semiconductor side of the photovoltaic cell as a periodically structured three-dimensional surface. A layer of carbon-based transparent electrode material (such as graphene, carbon nanotubes, etc.) tightly bonded to the structured surface serves as the upper electrode, improving light scattering performance and effectively avoiding the problem of poor metal-semiconductor contact due to the small work function difference between carbon and silicon, which belong to the same group.

Description

Technical Field

[0001] This utility model relates to the field of photovoltaic cell technology, and more specifically to a novel photovoltaic cell structure. Background Technology

[0002] With the continuous growth of energy demand, photovoltaic power generation, as a clean and renewable energy source, has become a widely used green energy technology globally. Traditional photovoltaic cells mainly use silicon-based materials and have high photoelectric conversion efficiency, but they still face some technical bottlenecks. In particular, existing technologies have certain limitations in the design of the top electrode and surface structure of the cells.

[0003] Traditional photovoltaic cells typically use materials such as metal grid lines, ITO (indium tin oxide), and FTO (fluorine-doped zinc oxide) as their top electrodes. While these materials offer certain advantages in conductivity, they present two main problems: First, the work function of top electrode materials like metal grid lines differs significantly from that of silicon-based materials, easily leading to metal-semiconductor contact and thus affecting the cell's performance and stability. Second, the top surface of traditional photovoltaic cells often employs a planar structure or a chemically etched textured surface. Although this structure can improve the surface's light scattering ability to some extent, the scattering effect is unstable and it is difficult to further improve the photoelectric conversion efficiency.

[0004] To address these issues, researchers have recently begun exploring the use of novel materials and structures to optimize photovoltaic cell performance. For example, nanostructures or three-dimensional surface structures are being used to enhance light scattering and absorption. However, in practical applications, effectively improving photoelectric conversion efficiency while ensuring cell stability remains a critical technical challenge.

[0005] Therefore, how to provide a novel photovoltaic cell structure that can overcome the problems of work function mismatch and unstable light scattering ability in traditional designs, while improving the photoelectric conversion efficiency, stability and controllability of the cell, is a problem that urgently needs to be solved by those skilled in the art. Utility Model Content

[0006] In view of this, the present invention provides a novel photovoltaic cell structure, which aims to solve the problems of large difference in work function between the upper electrode material and silicon-based cells, insufficient light scattering ability, and unstable scattering effect in traditional photovoltaic cells.

[0007] To achieve the above objectives, this utility model provides the following technical solution:

[0008] A novel photovoltaic cell structure includes a lower electrode P-type silicon semiconductor layer and an upper electrode N-type silicon semiconductor layer; one side of the N-type silicon semiconductor layer is a periodically regular three-dimensional structured surface; a transparent carbon-based electrode material layer is disposed on the three-dimensional structured surface, and the transparent carbon-based electrode material layer is closely attached to the three-dimensional structured surface.

[0009] Preferably, the lower electrode P-type silicon semiconductor layer comprises monocrystalline silicon or thin-film silicon, and the upper electrode N-type silicon semiconductor layer comprises monocrystalline silicon or thin-film silicon.

[0010] Preferably, the doped ions of the lower electrode P-type silicon semiconductor layer can be boron, aluminum, gallium, indium, thallium, or other Group 3 elements.

[0011] Preferably, the doping ions of the upper electrode N-type silicon semiconductor layer can be group 5 elements such as phosphorus and arsenic.

[0012] Preferably, the periodicity of the structure of the three-dimensional structured surface is formed by etching, laser processing, or nanoimprinting.

[0013] Preferably, the transparent carbon-based electrode material layer is one of graphene film, carbon nanotube film and silver nanowire film composite film, or graphene film and PEDOT:PSS film composite film.

[0014] Preferably, the thickness of the transparent carbon-based electrode material is 1 to 200 nanometers.

[0015] As can be seen from the above technical solution, compared with the prior art, this utility model discloses a novel photovoltaic cell structure that enhances the surface light scattering ability and improves its stability and controllability by designing the N-type semiconductor side of the photovoltaic cell as a periodically regular three-dimensional structured surface. A layer of carbon-based transparent electrode material (such as graphene, carbon nanotubes, etc.) is tightly adhered to the structured surface. This electrode material serves as the top electrode, not only improving light scattering performance but also effectively avoiding the problem of poor metal-semiconductor contact because carbon and silicon belong to the same group and have a small difference in work function. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0017] Figure 1 The attached figure is a structural schematic diagram of Embodiment 1 of this utility model.

[0018] Figure 2 The attached figure is a structural schematic diagram of Embodiment 2 of this utility model.

[0019] Figure 3 The attached figure is a structural schematic diagram of Embodiment 3 of this utility model. Detailed Implementation

[0020] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0021] This invention discloses a novel photovoltaic cell structure, comprising a lower electrode P-type silicon semiconductor layer 20 and an upper electrode N-type silicon semiconductor layer 10; one side of the N-type silicon semiconductor layer 10 is a periodically regular three-dimensional structured surface 30; a transparent carbon-based electrode material layer is disposed on the three-dimensional structured surface 30, and the transparent carbon-based electrode material layer is closely attached to the three-dimensional structured surface.

[0022] The materials of the lower electrode P-type silicon semiconductor layer 20 and the upper electrode N-type silicon semiconductor layer 10 include single-crystal silicon, thin-film silicon, or other types of silicon-based materials.

[0023] The doped ions of the lower electrode P-type silicon semiconductor layer 20 can be boron, aluminum, gallium, indium, thallium, or other Group III elements.

[0024] The doping ions of the upper electrode N-type silicon semiconductor layer 10 can be group 5 elements such as phosphorus and arsenic.

[0025] The periodicity of the three-dimensional structured surface 30 is formed by methods such as etching, laser processing, and nanoimprinting. Furthermore, the three-dimensional structured surface 30 of the photovoltaic cell can be adjusted according to actual needs to adapt to different lighting environments and optimize the performance of the photovoltaic cell.

[0026] The transparent carbon-based electrode material layer is one of the following: a composite film of graphene film 1, carbon nanotube film 3 and silver nanowire film 2, or a composite film of graphene film 1 and PEDOT:PSS film 4.

[0027] The work function of the transparent carbon-based electrode material is small compared to that of the N-type semiconductor material, thus avoiding the problem of poor metal-semiconductor contact.

[0028] Furthermore, the thickness of the transparent carbon-based electrode material is 1 to 200 nanometers to ensure photoconductivity and avoid excessive blocking of incident light.

[0029] Example 1:

[0030] Reference Appendix Figure 1 The present invention discloses a novel photovoltaic cell structure, comprising a lower electrode P-type silicon semiconductor layer 20 and an upper electrode N-type silicon semiconductor layer 10; one side of the N-type silicon semiconductor layer 10 is a periodically regular three-dimensional structured surface 30; a transparent carbon-based electrode material layer is disposed on the three-dimensional structured surface 30, and the transparent carbon-based electrode material layer is closely attached to the three-dimensional structured surface.

[0031] This embodiment provides a novel photovoltaic cell structure that uses monocrystalline silicon as the base material, combined with a periodic three-dimensional structured surface and transparent carbon-based electrode material to improve photoelectric conversion efficiency.

[0032] The lower electrode P-type silicon semiconductor layer 20 and the upper electrode N-type silicon semiconductor layer 10 are made of P-type single-crystal silicon semiconductor material, and the upper electrode is made of N-type single-crystal silicon semiconductor material. Furthermore, the P-type silicon semiconductor layer is doped with boron, and the N-type silicon semiconductor layer is doped with phosphorus to ensure that the battery has good photoelectric performance.

[0033] Furthermore, the upper surface of the N-type silicon semiconductor layer 10 is formed with a periodic three-dimensional structured surface 30 using nanoimprint lithography. The periodicity of the structure is a 100-nanometer conical structure. This surface can effectively enhance light scattering and improve light absorption efficiency.

[0034] Furthermore, a 50-nanometer-thick layer of transparent carbon-based electrode material is coated onto the three-dimensional structured surface. Graphene film 1 is selected as the electrode material because of its excellent conductivity and light transmittance.

[0035] Example 2:

[0036] Reference Appendix Figure 2 The present invention discloses a novel photovoltaic cell structure, comprising a lower electrode P-type silicon semiconductor layer 20 and an upper electrode N-type silicon semiconductor layer 10; one side of the N-type silicon semiconductor layer 10 is a periodically regular three-dimensional structured surface 30; a transparent carbon-based electrode material layer is disposed on the three-dimensional structured surface 30, and the transparent carbon-based electrode material layer is closely attached to the three-dimensional structured surface.

[0037] This embodiment provides a novel photovoltaic cell structure that uses thin-film silicon as the base material, combined with a periodic three-dimensional structured surface and transparent carbon-based electrode material, to improve the photoelectric conversion efficiency and stability of the photovoltaic cell.

[0038] The lower electrode P-type silicon semiconductor layer 20 and the upper electrode N-type silicon semiconductor layer 10 are made of P-type thin-film silicon semiconductor material, and the upper electrode is made of N-type thin-film silicon semiconductor material. Furthermore, the P-type silicon semiconductor layer is doped with aluminum, and the N-type silicon semiconductor layer is doped with arsenic to optimize the doping effect.

[0039] Furthermore, the upper surface of the N-type silicon semiconductor layer 10 is formed with a periodic three-dimensional structured surface 30 using laser processing technology. The periodicity of the structure is a 50-nanometer conical structure. This significantly increases light scattering and absorption, thereby effectively improving photoelectric conversion efficiency.

[0040] Furthermore, a 100-nanometer-thick transparent carbon-based electrode material is coated onto the three-dimensional structured surface 30. Specifically, a film composed of a carbon nanotube film 3 and a silver nanowire film 2 is selected as the electrode material because it has good conductivity and stability, which can effectively improve the performance of the battery and reduce light shading.

[0041] Example 3:

[0042] Reference Appendix Figure 3 The present invention discloses a novel photovoltaic cell structure, comprising a lower electrode P-type silicon semiconductor layer 20 and an upper electrode N-type silicon semiconductor layer 10; one side of the N-type silicon semiconductor layer 10 is a periodically regular three-dimensional structured surface 30; a transparent carbon-based electrode material layer is disposed on the three-dimensional structured surface 30, and the transparent carbon-based electrode material layer is closely attached to the three-dimensional structured surface.

[0043] This embodiment provides a novel photovoltaic cell structure that uses monocrystalline silicon as the base material, combined with a periodic three-dimensional structured surface and transparent carbon-based electrode material, to further improve the efficiency and stability of the photovoltaic cell, making it suitable for high-efficiency photovoltaic power generation systems.

[0044] The lower electrode P-type silicon semiconductor layer 20 and the upper electrode N-type silicon semiconductor layer 10 are made of P-type single-crystal silicon semiconductor material, and the upper electrode is made of N-type single-crystal silicon semiconductor material. Furthermore, the P-type silicon semiconductor layer 20 is doped with indium, and the N-type silicon semiconductor layer 10 is doped with arsenic. Through optimized interlayer contact, the electrical performance of the battery is maximized.

[0045] Furthermore, the upper surface of the N-type silicon semiconductor layer 10 is etched to form a periodic three-dimensional structured surface 30. The periodicity of the structure is a 50-nanometer cubic structure, ensuring maximum light scattering. This surface can significantly improve the effective absorption rate of incident light and reduce reflection loss.

[0046] Furthermore, a 100-nanometer-thick transparent carbon-based electrode material is coated onto the three-dimensional structured surface 30. Specifically, a film composed of graphene film 1 and PEDOT:PSS film 4 is selected as the electrode material to ensure that the battery has excellent conductivity, transparency and low work function difference.

[0047] This invention discloses a novel photovoltaic cell structure that enhances light scattering capability and improves stability and controllability by designing the N-type semiconductor side of the photovoltaic cell as a periodically structured three-dimensional surface. A layer of carbon-based transparent electrode material (such as graphene or carbon nanotubes) is tightly adhered to the structured surface and serves as the top electrode. This electrode material not only improves light scattering performance but also effectively avoids the problem of poor metal-semiconductor contact because carbon and silicon belong to the same group and have a small work function difference.

[0048] The above description of the disclosed embodiments enables those skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A novel photovoltaic cell structure, characterized in that, include: The lower electrode is a P-type silicon semiconductor layer (20) and the upper electrode is an N-type silicon semiconductor layer (10); one side of the N-type silicon semiconductor layer (10) is a periodically regular three-dimensional structured surface (30); a transparent carbon-based electrode material layer is provided on the three-dimensional structured surface (30), and the transparent carbon-based electrode material layer is closely attached to the three-dimensional structured surface; The lower electrode P-type silicon semiconductor layer (20) is made of either single-crystal silicon or thin-film silicon, and the upper electrode N-type silicon semiconductor layer (10) is made of either single-crystal silicon or thin-film silicon. The doped ions of the lower electrode P-type silicon semiconductor layer (20) are one of the group III elements; The doped ions of the upper electrode N-type silicon semiconductor layer (10) are one of the group V elements; The structural periodicity of the three-dimensional structured surface (30) is formed by etching, laser processing or nanoimprinting. The transparent carbon-based electrode material layer is one of graphene film (1) or carbon nanotube film (3) and silver nanowire film (2) composite film or graphene film (1) and PEDOT:PSS film (4) composite film; The thickness of the transparent carbon-based electrode material is 1 to 200 nanometers.

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