A chemical vapor deposition apparatus for diamond

Abstract

A kind of diamond chemical vapor deposition device, including vacuum reaction chamber, the upper portion of the vacuum reaction chamber is provided with distribution platform, the top left side of the distribution platform is connected with hydrogen pipeline, the top right side of the distribution platform is connected with carbon-containing pipeline, the lower portion of the distribution platform is provided with microwave plasma, the lower portion of the microwave plasma is provided with substrate table, the upper portion of the substrate table is provided with molybdenum support, diamond seed is placed on the molybdenum support, the bottom of the substrate table is provided with cooling assembly, the right side of the vacuum reaction chamber is provided with negative pressure fan.The utility model can better solve the problems in the prior art, create better economic benefits.

Description

Technical Field

[0001] This utility model belongs to the field of diamond production technology, specifically relating to a chemical vapor deposition apparatus for diamond. Background Technology

[0002] Chemical vapor deposition (CVD) achieves diamond structure deposition on a pretreated substrate surface by precisely controlling the chemical reaction between carbon-containing gas and hydrogen in an activated state. The growth requirements of diamond can be met by adjusting parameters such as gas composition, ratio, pressure, temperature, energy input method, and substrate treatment. However, in existing technologies, uneven gas flow and temperature distribution on the diamond surface, coupled with high deposition temperatures, negatively impact the efficiency of CVD. Utility Model Content

[0003] In response to the shortcomings and defects of existing technologies, the inventors, based on their extensive experience in the field of diamond production technology, developed a chemical vapor deposition device for diamond.

[0004] To achieve the above objectives, this utility model provides the following technical solution: a chemical vapor deposition apparatus for diamond, comprising a vacuum reaction chamber, a distribution platform at the top of the vacuum reaction chamber, a hydrogen pipeline connected to the top left side of the distribution platform, a carbon-containing pipeline connected to the top right side of the distribution platform, a microwave plasma below the distribution platform, a substrate stage below the microwave plasma, a molybdenum support above the substrate stage, a diamond seed crystal placed on the molybdenum support, a cooling assembly at the bottom of the substrate stage, and a negative pressure fan on the right side of the vacuum reaction chamber.

[0005] Furthermore, the hydrogen pipeline and the carbon-containing pipeline extend upward through the vacuum reaction chamber. The hydrogen pipeline is equipped with a first self-regulating valve, and the carbon-containing pipeline is equipped with a second self-regulating valve. The hydrogen in the hydrogen pipeline and the methane gas in the carbon-containing pipeline are mixed in a distribution station. In actual production, other gases can also be used for the carbon-containing gas; however, methane gas is preferred in this application.

[0006] Furthermore, the bottom of the distribution stage is provided with a distribution hole, which is circular. After hydrogen and methane gas are mixed in the distribution stage, they are uniformly ejected from the distribution hole. After the hydrogen and methane gas are mixed in the distribution stage, they react with microwave plasma, which can effectively improve the vapor deposition efficiency.

[0007] Furthermore, the cooling assembly is connected to a cooling water inlet pipe and a cooling water outlet pipe, with the cooling water inlet pipe located to the left of the cooling water outlet pipe. The cooling assembly can effectively reduce the high temperatures generated during vapor deposition, thereby improving deposition efficiency.

[0008] Furthermore, a negative pressure pipe is connected to the left side of the negative pressure fan, and the end of the negative pressure pipe is connected to the bottom right side of the vacuum reaction chamber. A third self-control valve is installed on the negative pressure pipe.

[0009] In this invention, by setting a first self-control valve, a second self-control valve, and a third self-control valve, the degree of automation in production can be effectively improved.

[0010] Furthermore, the vapor deposition temperature in the vacuum reaction chamber is K, where 900℃ < K < 1200℃.

[0011] Compared with the prior art, the beneficial effects of this utility model are as follows: By setting up an empty reaction chamber, hydrogen pipeline, carbon-containing pipeline, distribution stage, microwave plasma, cooling components and substrate stage, this utility model can mix hydrogen and methane gas in the distribution stage and then react with microwave plasma; the cooling components are connected to cooling water inlet pipe and cooling water outlet pipe, which can effectively reduce the high temperature generated during the gas deposition process. Through the improvement of the above technical solution, the gas phase deposition efficiency can be effectively improved. Attached Figure Description

[0012] Figure 1 This is a schematic diagram of the structure of this utility model.

[0013] Figure 2 This is a schematic diagram of the cooling components, substrate stage, molybdenum holder, and diamond seed crystal.

[0014] Figure 3 This is a schematic diagram of the distribution station.

[0015] Reference numerals: 1. Vacuum reaction chamber; 2. Hydrogen pipeline; 3. First automatic control valve; 4. Carbon-containing pipeline; 5. Second automatic control valve; 6. Distribution platform; 601. Distribution hole; 7. Microwave plasma; 8. Cooling assembly; 9. Substrate stage; 10. Molybdenum support; 11. Diamond seed crystal; 12. Cooling water inlet pipe; 13. Cooling water outlet pipe; 14. Negative pressure pipe; 15. Third automatic control valve; 16. Negative pressure fan. Detailed Implementation

[0016] To further illustrate the technical means and effects adopted by this utility model to achieve its intended purpose, the present utility model will be described in detail below with reference to the accompanying drawings and specific embodiments.

[0017] The foregoing and other technical contents, features, and effects of this utility model will be clearly presented in the following detailed description of the specific embodiments with reference to the accompanying drawings. Through the description of the specific embodiments, a more in-depth and specific understanding can be gained of the technical means and effects adopted by this utility model to achieve the intended purpose. However, the accompanying drawings are only provided for reference and illustration and are not intended to limit the technical solution of this utility model.

[0018] like Figures 1-3 As shown, a chemical vapor deposition apparatus for diamond includes a vacuum reaction chamber 1. A distribution platform 6 is arranged at the upper part of the vacuum reaction chamber 1. A hydrogen pipeline 2 is connected to the top left side of the distribution platform 6, and a carbon-containing pipeline 4 is connected to the top right side of the distribution platform 6. A microwave plasma 7 is arranged below the distribution platform 6. A substrate stage 9 is arranged below the microwave plasma 7. A molybdenum support 10 is arranged above the substrate stage 9. A diamond seed crystal 11 is placed on the molybdenum support 10. A cooling assembly 8 is arranged at the bottom of the substrate stage 9. A negative pressure fan 16 is arranged on the right side of the vacuum reaction chamber 1.

[0019] In this embodiment, the hydrogen pipeline 2 and the carbon-containing pipeline 4 extend upward through the vacuum reaction chamber 1. The hydrogen pipeline 2 is equipped with a first self-regulating valve 3, and the carbon-containing pipeline 4 is equipped with a second self-regulating valve 5. The hydrogen gas in the hydrogen pipeline 2 and the methane gas in the carbon-containing pipeline 4 are mixed in the distribution station 6. In actual production, other gases can also be used for the carbon-containing gas; however, methane gas is preferred in this application.

[0020] In this embodiment, a distribution hole 601 is provided at the bottom of the distribution stage 6. The distribution hole 601 is circular. After hydrogen and methane gas are mixed in the distribution stage 6, they are uniformly ejected from the distribution hole 601. After the hydrogen and methane gas are mixed in the distribution stage 6, they react with microwave plasma 7, which can effectively improve the vapor deposition efficiency.

[0021] In this embodiment, the cooling assembly 8 is connected to a cooling water inlet pipe 12 and a cooling water outlet pipe 13, with the cooling water inlet pipe 12 located to the left of the cooling water outlet pipe 13. The cooling assembly 8 can effectively reduce the high temperature generated during the vapor deposition process, thereby improving the deposition efficiency.

[0022] In this embodiment, a negative pressure pipe 14 is connected to the left side of the negative pressure fan 16, and the end of the negative pressure pipe 14 is connected to the bottom right side of the vacuum reaction chamber 1. A third self-control valve 15 is provided on the negative pressure pipe 14.

[0023] In this embodiment, by setting the first self-control valve 3, the second self-control valve 5 and the third self-control valve 15, the automation level of diamond production can be effectively improved.

[0024] In this embodiment, the vapor deposition temperature in the vacuum reaction chamber 1 is K, where 900℃ < K < 1200℃.

[0025] In practical operation, the following steps are taken: First, the negative pressure fan 16 is turned on, and the first self-control valve 3 and the second self-control valve 5 are slowly opened. The operator controls the opening degree of the self-control valves according to the process requirements. The hydrogen gas in the hydrogen pipeline 2 and the methane gas in the carbon-containing pipeline 4 are mixed in the distribution station 6. The mixed gas is ejected from the distribution hole 601 and then reacts with the microwave plasma 7 to form a plasma ball. The plasma ball adheres tightly to the surface of the diamond seed crystal 11, thereby continuously depositing carbon on the surface of the diamond seed crystal 11, causing the diamond seed crystal 11 to gradually grow from small to large. During the vapor deposition process, cooling water can be introduced into the cooling component 8. Since the cooling component 8 is attached to the bottom of the substrate stage 9, it can effectively cool the substrate stage 9 and improve the vapor deposition efficiency. The reacted gas is discharged from the vacuum reaction chamber 1 through the negative pressure pipe 14.

[0026] It is particularly important to note that the MPCVD process involves high vacuum, high temperature, high pressure, and flammable, explosive, and toxic gases. The equipment operating in production must be equipped with comprehensive safety protection systems, such as gas leak monitoring, vacuum interlocks, and water pressure and temperature alarms. Operators must undergo rigorous training before being allowed to operate the equipment.

[0027] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations are intended to cover non-exclusive inclusion, such that an article or device comprising a list of elements includes not only those elements but also other elements not expressly listed. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the article or device comprising said element. Terms such as "connected" or "linked" are not limited to physical or mechanical connections but can include electrical connections. The orientations or positional relationships indicated by terms such as "upper," "lower," "left," and "right" are based on the orientations or positional relationships shown in the accompanying drawings and are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention.

Claims

1. A chemical vapor deposition apparatus for diamond, characterized in that: The device includes a vacuum reaction chamber, with a distribution platform at the top. A hydrogen pipeline is connected to the top left side of the distribution platform, and a carbon-containing pipeline is connected to the top right side of the distribution platform. A microwave plasma is located below the distribution platform, and a substrate stage is located below the microwave plasma. A molybdenum support is located above the substrate stage, and a diamond seed crystal is placed on the molybdenum support. A cooling assembly is located at the bottom of the substrate stage, and a negative pressure fan is located on the right side of the vacuum reaction chamber.

2. The chemical vapor deposition apparatus for diamond according to claim 1, characterized in that: The hydrogen pipeline and the carbon-containing pipeline extend upward through the vacuum reaction chamber. The hydrogen pipeline is equipped with a first self-regulating valve, and the carbon-containing pipeline is equipped with a second self-regulating valve. The hydrogen in the hydrogen pipeline and the methane gas in the carbon-containing pipeline are mixed in the distribution station.

3. The chemical vapor deposition apparatus for diamond according to claim 1, characterized in that: The bottom of the distribution platform has a distribution hole, which is circular. After hydrogen and methane gas are mixed in the distribution platform, they are evenly sprayed out from the distribution hole.

4. The chemical vapor deposition apparatus for diamond according to claim 1, characterized in that: The cooling assembly is connected to a cooling water inlet pipe and a cooling water outlet pipe, with the cooling water inlet pipe located to the left of the cooling water outlet pipe.

5. The chemical vapor deposition apparatus for diamond according to claim 1, characterized in that: A negative pressure pipe is connected to the left side of the negative pressure fan, and the end of the negative pressure pipe is connected to the bottom right side of the vacuum reaction chamber. A third self-control valve is installed on the negative pressure pipe.

6. The chemical vapor deposition apparatus for diamond according to claim 1, characterized in that: The deposition temperature in the vacuum reaction chamber is K, where 900℃ < K < 1200℃.

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