Carrier device and coating apparatus

Abstract

The application discloses a bearing device and a coating equipment, and relates to the technical field of photovoltaics. The bearing device comprises a frame body, an enclosure part and a support part. The enclosure part is arranged on the frame body and protrudes from the inner side wall of the frame body. The enclosure part extends along the frame body to form a closed structure. A plurality of support parts are arranged on the enclosure part and are arranged at intervals along the enclosure part. The support parts protrude away from the inner side wall. The plurality of support parts are used for supporting the edges of a silicon substrate in a first direction. The first direction is perpendicular to the plane in which the frame body is located. The enclosure part is used for shielding the gap between the edges of the silicon substrate and the frame body. When the bearing device provided by the embodiment of the application is used for deposition, a discontinuous transparent conductive layer can be deposited on the side of the silicon substrate. This makes the transparent conductive layer on the front surface of the silicon substrate and the transparent conductive layer on the back surface not conductive. The plurality of support parts are supported at different positions on the edges of the silicon substrate in a scattered manner. The area of the silicon substrate abutted by the support parts is smaller, which is beneficial to improving the coverage area of the transparent conductive layer.

Description

Technical Field

[0001] This application relates to the field of photovoltaic technology, and more specifically, to a carrier device and a coating equipment. Background Technology

[0002] The transparent conductive oxide (TCO) layer in a solar cell is a material located on the surface of the cell. It must ensure sufficient light transmittance to allow as much light as possible to reach the cell, while also possessing good conductivity to effectively collect the generated current. Since the front and back sides of the cell have different polarities (collecting electrons and holes respectively), the TCO layers on the front and back sides cannot be directly conductive to avoid short circuits. The TCO layer is often fabricated using a vapor deposition process. In related technologies, a support device is used to support the edges of the cell during TCO deposition, and then the TCO layer is deposited. The TCO layer is distributed on the front, back, and sides of the cell. The area of ​​the cell supported by the support plate cannot have the TCO layer deposited, thus forming an isolation zone. In related technologies, the support surface of the support device supports the cell along its edges, causing the isolation zone on the back side of the cell to extend along the edges to form a closed structure, thus ensuring that the TCO layers on the front and back sides are not conductive. Therefore, using existing support devices to support the cell results in a smaller coverage area of ​​the TCO layer on the back side of the cell. This will affect the efficiency of carrier collection and transport, and thus affect battery performance. Utility Model Content

[0003] The purpose of this application is to provide a carrier device and a coating apparatus that can increase the coverage area of ​​the transparent conductive layer on the back of the battery cell to improve battery performance.

[0004] The embodiments of this application can be implemented as follows: In a first aspect, this application provides a carrier device for carrying a silicon substrate to be coated. The carrier device includes a frame, a blocking portion, and a support portion. The blocking portion is disposed on the frame and protrudes from the inner sidewall of the frame, and the blocking portion extends along the frame to form a closed structure. A plurality of support portions are disposed on the blocking portion and arranged at intervals along the blocking portion. The support portions protrude in a direction away from the inner sidewall, and the plurality of support portions are used to jointly support the edge of the silicon substrate along a first direction. The first direction is perpendicular to the plane where the frame is located. The blocking portion is used to cover the gap between the edge of the silicon substrate and the frame.

[0005] In an optional embodiment, the support portion has a support surface for supporting the silicon substrate, the support surface being perpendicular to a first direction, and the enclosure portion has a guide slope, the guide slope having a first end near the inner sidewall and a second end away from the inner sidewall, the first end being flush with the support surface in the first direction, and the second end being lower than the support surface in the first direction.

[0006] In an optional embodiment, the angle between the support surface and the guide ramp is 1° to 89°.

[0007] In an optional embodiment, the enclosure has a shielding surface that is in the same spatial plane as the support surface. One end of the shielding surface is connected to the inner sidewall, and the other end of the shielding surface is connected to the first end of the guide ramp. The shielding surface is used to face the gap between the silicon substrate and the frame.

[0008] In an optional embodiment, the end of the enclosure portion away from the frame has an end face, which is parallel to a first direction, and one end of the end face in the first direction is connected to the second end of the guide ramp.

[0009] In an optional embodiment, the length of the support surface extending away from the inner wall of the frame is 0.1 to 0.2 mm.

[0010] In an optional embodiment, the inner sidewall has a top edge and a bottom edge opposite each other in a first direction, the bottom edge being connected to the enclosure portion, and the distance between the top edge and the bottom edge in the first direction being 0.7~1.5mm.

[0011] In an optional embodiment, the frame includes two long side beams and two short side beams, which together form a rectangular frame.

[0012] In an optional embodiment, each long side beam and each short side beam is provided with at least one support portion.

[0013] Secondly, this application provides a coating apparatus, including a carrier device according to any of the foregoing embodiments.

[0014] The beneficial effects of the carrier device and coating equipment provided in this application embodiment include: The carrier device provided in this application embodiment is used to support a silicon substrate to be coated. The carrier device includes a frame, a blocking part, and a support part. The blocking part is disposed in the frame and protrudes from the inner sidewall of the frame, extending along the frame to form a closed structure. Multiple support parts are disposed in the blocking part and arranged at intervals along the blocking part, protruding away from the inner sidewall. The multiple support parts are used to jointly support the edge of the silicon substrate along a first direction, which is perpendicular to the plane of the frame. The blocking part is used to block the gap between the edge of the silicon substrate and the frame. When the silicon substrate is supported using the carrier device provided in this application embodiment, the closed structure formed by the blocking part can block the gap between the silicon substrate and the frame. Therefore, the blocking part acts as a barrier to the process gas on the back side of the silicon substrate, allowing the process gas to enter the gap only from the front side of the silicon substrate. When the side of the silicon substrate has a pyramid structure, since the process gas is restricted to entering the gap from the front to the back side, a transparent conductive layer will be deposited on the slope facing the front of the pyramid structure, while no transparent conductive layer will be deposited on the slope facing the back. Therefore, the transparent conductive layer on the side of the silicon substrate is discontinuous in the thickness direction of the silicon substrate. This prevents the transparent conductive layer on the front of the silicon substrate from conducting through the transparent conductive layer on the side to the transparent conductive layer on the back of the silicon substrate, thus avoiding a short circuit between the transparent conductive layers on the front and back. In the support device provided in this application, multiple supports are distributed at different positions on the edge of the silicon substrate. Compared with the prior art where the support is continuous along the edge of the silicon substrate, the area of ​​the silicon substrate abutted by the supports in this application is smaller. Therefore, the coverage area of ​​the transparent conductive layer on the back of the silicon substrate can be increased, thereby improving the carrier collection capacity and thus improving the photoelectric conversion efficiency of the solar cell.

[0015] The coating equipment provided in this application includes the aforementioned carrier device. Using this coating equipment to deposit a transparent conductive layer can improve the performance of solar cells. Attached Figure Description

[0016] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This is a first schematic diagram of a battery cell in the related technology; Figure 2 This is a schematic diagram of the back side of a solar cell in a related technology; Figure 3 This is a schematic diagram of a carrier device in one embodiment of this application; Figure 4This is a schematic diagram of a carrier device supporting a silicon substrate in one embodiment of this application; Figure 5 This is a scanning electron microscope image of the third transparent conductive layer on the side surface in one embodiment of this application; Figure 6 This is a schematic diagram showing the distribution of the second transparent conductive layer of the battery cell in one embodiment of this application; Figure 7 This is a cross-sectional view of a silicon substrate in one embodiment.

[0018] Icons: 100-Silicon substrate; 101-First surface; 102-Second surface; 103-Side surface; 104-Transition slope; 105-Pyramid structure; 106-Isolation region; 107-Support region; 110-First doped silicon layer; 120-First intrinsic silicon layer; 130-Substrate layer; 140-Second intrinsic silicon layer; 150-Second doped silicon layer; 200-Transparent conductive layer; 210-First transparent conductive layer; 220-Second transparent conductive layer; 230-Third transparent conductive layer; 240-Fourth transparent conductive layer; 300-Supporting device; 310-Frame; 311-Inner sidewall; 312-Long side beam; 313-Short side beam; 320-Enclosure part; 321-Shielding surface; 322-Guide slope; 323-End face; 330-Support part; 331-Support surface. Detailed Implementation

[0019] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0020] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0021] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0022] In the description of this application, it should be noted that if terms such as "upper," "lower," "inner," or "outer" are used to indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship that the utility model product is usually placed in during use, they are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0023] Furthermore, the terms "first" and "second" are used only to distinguish descriptions and should not be interpreted as indicating or implying relative importance.

[0024] It should be noted that, where there is no conflict, the features in the embodiments of this application can be combined with each other.

[0025] In related technologies, a support device is used to support the entire edge of the silicon substrate, and then a transparent conductive layer is deposited on the front, back and side of the silicon substrate. Figure 1 This is a first schematic diagram of a battery cell in the related technology; Figure 2 This is a schematic diagram of the back side of a solar cell in a related technology. For example... Figure 1 and Figure 2 As shown, the edge of the back side (lower surface during thin film deposition) of the silicon substrate 100 is supported by the support device, preventing the deposition of the transparent conductive layer 200. Therefore, the supported area on the silicon substrate 100 forms an isolation region 106. The isolation region 106 extends along the edge to form a closed structure, thus ensuring that the transparent conductive layers 200 on the front and back sides are not conductive. It should be understood that, for ease of reading, Figure 2 The pyramid structure on the solar cell is omitted in this design. In related technologies, the way the carrier device supports the silicon substrate 100 results in a smaller coverage area of ​​the transparent conductive layer 200 on the back of the solar cell. This affects the collection and transport efficiency of charge carriers, thus impacting battery performance.

[0026] To address the issue of insufficient coverage area of ​​the transparent conductive layer 200 on the back of the solar cell, this application provides a support device that provides multi-point support for the back of the silicon substrate 100 through multiple support parts, thereby reducing the support area. Simultaneously, by setting up a baffle, process gases are prevented from depositing on the sides of the silicon substrate 100 from bottom to top. This ensures that the transparent conductive layer 200 is deposited only on the upward-facing slope of the pyramid structure on the side, resulting in a discontinuous transparent conductive layer 200 on the sides of the silicon substrate 100, thus preventing conductivity between the front and back transparent conductive layers 200.

[0027] Figure 3 This is a schematic diagram of the support device 300 in one embodiment of this application; Figure 4 This is a schematic diagram of a carrier device 300 supporting a silicon substrate 100 in one embodiment of this application. Figure 3 and Figure 4 As shown, the carrier device 300 provided in this embodiment is used to carry the silicon substrate 100 to be coated. The carrier device 300 includes a frame 310, a blocking portion 320, and a support portion 330. The blocking portion 320 is disposed on the frame 310 and protrudes from the inner sidewall 311 of the frame 310, extending along the frame 310 to form a closed structure. A plurality of support portions 330 are disposed on the blocking portion 320 and arranged at intervals along the blocking portion 320. The support portions 330 protrude in a direction away from the inner sidewall 311, and the plurality of support portions 330 are used to jointly support the edge of the silicon substrate 100 along a first direction, the first direction being perpendicular to the plane of the frame 310. The blocking portion 320 is used to cover the gap between the edge of the silicon substrate 100 and the frame 310. Figure 3 In the middle, the first direction is perpendicular to the display plane; in Figure 4 In this context, the first direction refers to the vertical direction. When the supporting device 300 supports the silicon substrate 100, the first direction is the thickness direction of the silicon substrate 100. It should be noted that, for ease of reference, Figure 4 The pyramid structure 105 was enlarged in the image. Figure 4 The ratio of the pyramid structure 105 to the silicon substrate 100 in the figure is not the same as the actual ratio.

[0028] The carrier device 300 provided in this application embodiment is applicable to a silicon substrate 100 having a pyramid structure 105 on its side surface 103. The silicon substrate 100 has a first surface 101 (e.g., the front surface) and a second surface 102 (e.g., the back surface), and a side surface 103 located between the edge of the first surface 101 and the edge of the second surface 102. The first surface 101, the second surface 102, and the side surface 103 are all textured surfaces containing a plurality of pyramid structures 105, and the pyramid structures 105 of the side surface 103 have a slope near the first surface 101 and a slope near the second surface 102. Figure 4As shown, when the support device 300 supports the silicon substrate 100, the support portion 330 supports the edge of the second surface 102 of the silicon substrate 100, and a gap is formed between the side surface 103 of the silicon substrate 100 and the inner sidewall 311 of the frame 310. The enclosure portion 320 blocks the lower opening of the gap, preventing the process gas from entering the gap from bottom to top for deposition. The process gas can only enter the gap from top to bottom through the upper opening. Since the process gas tends to move in a single direction from top to bottom within the gap, at least a portion of the pyramid structure 105 of the side surface 103 has a transparent conductive layer deposited only on the slope near the first surface 101 (i.e., the upward slope), while no transparent conductive layer is deposited on the slope near the second surface 102 (i.e., the downward slope). This makes the transparent conductive layer on the side 103 discontinuous in the thickness direction of the silicon substrate 100, and the transparent conductive layers on the first surface 101 and the second surface 102 of the silicon substrate 100 cannot conduct through the transparent conductive layer on the side 103.

[0029] For ease of description, the transparent conductive layer deposited on the first surface 101 is defined as the first transparent conductive layer 210, the transparent conductive layer deposited on the second surface 102 is defined as the second transparent conductive layer 220, and the transparent conductive layer deposited on the side surface 103 is defined as the third transparent conductive layer 230.

[0030] In this embodiment, the frame 310 includes two long side beams 312 and two short side beams 313, which together form a rectangular frame 310. Since the enclosure portion 320 extends along the frame 310, it also forms a rectangular frame shape. In this embodiment, each long side beam 312 and each short side beam 313 is provided with at least one support portion 330; specifically, each long side beam 312 has four support portions 330 on its enclosure portion 320, and each short side beam 313 has two support portions 330 on its enclosure portion 320. The number and distribution of the support portions 330 can be increased or decreased as needed.

[0031] In this embodiment, the support portion 330 has a support surface 331 for supporting the silicon substrate 100, the support surface 331 being perpendicular to the first direction. The enclosure portion 320 has a guide slope 322, the guide slope 322 having a first end near the inner sidewall 311 and a second end away from the inner sidewall 311. The first end is flush with the support surface 331 in the first direction, and the second end is lower than the support surface 331 in the first direction. In this embodiment, since the enclosure portion 320 may block the gap and potentially also block part of the second surface 102 of the silicon substrate 100, the guide slope 322 allows process gas to enter the second surface 102 above the guide slope 322 for deposition, thereby increasing the coverage area of ​​the second transparent conductive layer 220 on the second surface 102 and improving battery performance.

[0032] Optionally, the included angle A between the support surface 331 and the guide slope 322 is 1° to 89°. Further, the included angle A can be selected as 30° to 60°. It can be understood that the larger the included angle A, the easier it is for process gas to enter between the guide slope 322 and the second surface 102, and the larger the coverage area of ​​the second transparent conductive layer 220. However, the risk of process gas entering the gap from the lower end of the gap is also greater.

[0033] Furthermore, the enclosure portion 320 has a shielding surface 321, which is in the same spatial plane as the support surface 331. One end of the shielding surface 321 is connected to the inner sidewall 311, and the other end is connected to the first end of the guide slope 322. The shielding surface 321 is used to face the gap between the silicon substrate 100 and the frame 310. It can be understood that if the first end of the guide slope 322 extends to the inner sidewall 311 of the frame 310, process gas may enter the gap from the lower end of the gap. By providing the shielding surface 321 and covering the lower opening of the gap, process gas will not enter the gap from the lower end of the gap, reducing the risk of the third transparent conductive layer 230 being deposited on the downward slope of the pyramid structure 105, that is, reducing the risk of the third transparent conductive layer 230 being continuous in the thickness direction of the silicon substrate 100.

[0034] Furthermore, the end of the enclosure portion 320 away from the frame 310 has an end face 323, which is parallel to the first direction, and one end of the end face 323 in the first direction is connected to the second end of the guide slope 322.

[0035] In an optional embodiment, the support surface 331 extends 0.1 to 0.2 mm in the direction away from the inner wall 311 of the frame 310, wherein the width direction of the support surface 331 is perpendicular to the first direction and the extension direction of the frame 310. Figure 4 In the middle, the width direction of the support surface 331 is the left and right direction. The smaller the width of the support surface 331, the smaller the area, and the larger the coverage area of ​​the second transparent conductive layer 220, and the stronger the ability to collect charge carriers. However, if the width of the support surface 331 is too small, it may lead to a decrease in the reliability of the support.

[0036] In this embodiment, the inner sidewall 311 has a top edge and a bottom edge opposite each other in a first direction. The bottom edge of the inner sidewall 311 is connected to the enclosure portion 320, and the distance L between the top edge and the bottom edge in the first direction is 0.7~1.5mm. This allows the top edge of the inner sidewall 311 to be higher than the first surface 101 of the silicon substrate 100. The upper end of the inner sidewall 311 can guide the process gas, allowing the process gas to enter the gap downwards and deposit downwards in the gap to form a discontinuous third transparent conductive layer 230. If the height of the inner sidewall 311 is too low, the process gas may be deposited at other angles on the side surface 103, increasing the risk of discontinuity of the third transparent conductive layer 230.

[0037] It is understandable that when depositing a transparent conductive layer on the silicon substrate 100, the width of the gap between the side surface 103 of the silicon substrate 100 and the frame 310 needs to be small. This ensures that the process gas entering the gap moves and deposits from top to bottom, thus ensuring that the third transparent conductive layer 230 is deposited on the upward slope of the pyramid structure 105 of the side surface 103, while no third transparent conductive layer 230 is deposited on the downward slope. Optionally, the width W2 of the gap between the side surface 103 of the silicon substrate 100 and the frame 310 is less than 0.1 mm.

[0038] Figure 5 This is a scanning electron microscope (SEM) image of the third transparent conductive layer 230 on the side surface 103 in one embodiment of this application. Figure 5 As can be seen, the upward-facing slope of the pyramid structure 105 (towards the second surface 102) is covered with a third transparent conductive layer 230, while the downward-facing slope (towards the first surface 101) exposes the silicon substrate 100.

[0039] Furthermore, the silicon substrate 100 also has a transition slope 104 connecting the second surface 102 and the side surface 103. During the deposition process using the carrier device 300 of this embodiment, a fourth transparent conductive layer 240 is deposited on the transition slope 104. The thickness of the fourth transparent conductive layer 240 gradually decreases from the side closer to the second surface 102 to the side closer to the side surface 103. The presence of the guide slope 322 allows some process gas to enter above the guide slope 322 and deposit on the transition slope 104. The closer to the side surface 103, the less process gas can enter, thus the thinner the fourth transparent conductive layer 240 becomes. The fourth transparent conductive layer 240 is conductive to the second transparent conductive layer 220 and also functions as a carrier collector, thus improving the overall carrier collection efficiency of the solar cell to a certain extent, thereby improving battery performance.

[0040] Optionally, the thickness of the fourth transparent conductive layer 240 gradually decreases from 30 to 90 nm to 0 nm, for example, from 80 nm to 0 nm. That is, the fourth transparent conductive layer 240 gradually thins from the end connected to the second transparent conductive layer 220 toward the end closer to the side 103.

[0041] Figure 6 This is a schematic diagram showing the distribution of the second transparent conductive layer 220 of the battery cell in one embodiment of this application. Figure 6 As shown, by using the carrier device 300 provided in this embodiment of the application for thin film deposition, a plurality of support regions 107 can be formed on the second surface 102 of the silicon substrate corresponding to the support portion 330. The plurality of support regions 107 are spaced apart along the edge of the second surface 102. The second transparent conductive layer 220 covers the other areas of the second surface 102 except for the support regions 107. The size of the support regions 107 is the same as that of the support surface 331 of the support portion 330. Optionally, the width W1 of the support region 107 is less than 0.2 mm, wherein the width direction of the support region 107 is perpendicular to the edge of the adjacent second surface 102.

[0042] The carrier device 300 provided in this application embodiment can be used to support the silicon substrate of a heterojunction cell. Figure 7 Please provide a cross-sectional view of the silicon substrate 100 in one embodiment. For example... Figure 7 As shown, the silicon substrate 100 includes a first doped silicon layer 110, a first intrinsic silicon layer 120, a substrate layer 130, a second intrinsic silicon layer 140, and a second doped silicon layer 150, which are sequentially stacked along the thickness direction. The first doped silicon layer 110 forms a first surface 101, and the second doped silicon layer 150 forms a second surface 102. For ease of viewing, Figure 7 The pyramid structure 105 is omitted from the text.

[0043] Optionally, the thickness of the first intrinsic silicon layer 120 and the second intrinsic silicon layer 140 is 1~10nm, and the thickness of the first doped silicon layer 110 and the second doped silicon layer 150 is 5~25nm.

[0044] This application also provides a coating device (not shown in the figure), which includes the carrier device 300 provided in the above embodiment.

[0045] In summary, this application provides a carrier device 300 and a coating apparatus. The carrier device 300 includes a frame 310, a blocking portion 320, and a support portion 330. The blocking portion 320 is disposed on the frame 310 and protrudes from the inner sidewall 311 of the frame 310, extending along the frame 310 to form a closed structure. A plurality of support portions 330 are disposed on the blocking portion 320 and arranged at intervals along the blocking portion 320. The support portions 330 protrude in a direction away from the inner sidewall 311. The plurality of support portions 330 are used to jointly support the edge of the silicon substrate 100 along a first direction, which is perpendicular to the plane of the frame 310. The blocking portion 320 is used to cover the gap between the edge of the silicon substrate 100 and the frame 310. When the silicon substrate 100 is supported by the support device 300 provided in this embodiment, the closed structure formed by the enclosure portion 320 can block the gap between the silicon substrate 100 and the frame 310. Therefore, the enclosure portion 320 blocks the process gas on the back side of the silicon substrate 100, allowing the process gas to enter the gap only from the front side of the silicon substrate 100. When the side 103 of the silicon substrate 100 has a pyramid structure 105, since the process gas is restricted to entering the gap from the front to the back side, a transparent conductive layer 200 will be deposited on the slope facing the front of the pyramid structure 105, while no transparent conductive layer 200 will be deposited on the slope facing the back side. Therefore, the transparent conductive layer 200 on the side 103 of the silicon substrate 100 is discontinuous in the thickness direction of the silicon substrate 100. This prevents the transparent conductive layer 200 on the front side of the silicon substrate 100 from conducting with the transparent conductive layer 200 on the back side of the silicon substrate 100 through the transparent conductive layer 200 on the side 103, thereby avoiding a short circuit between the transparent conductive layers 200 on the front and back sides. In the support device 300 provided in this application, multiple support portions 330 are distributed and supported at different positions on the edge of the silicon substrate 100. Compared with the prior art where the support is continuous along the edge of the silicon substrate 100, the area of ​​the silicon substrate 100 abutted by the support portions 330 in this application is smaller. Therefore, the coverage area of ​​the transparent conductive layer 200 on the back side of the silicon substrate 100 can be increased, thereby improving the carrier collection capability and thus improving the photoelectric conversion efficiency of the solar cell.

[0046] The coating equipment provided in this application includes the aforementioned carrier device 300. Using this coating equipment to deposit a transparent conductive layer 200 can improve the performance of solar cells.

[0047] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application.

Claims

1. A support device for supporting a silicon substrate to be coated, characterized in that, The supporting device includes a frame, a enclosure, and a support. The enclosure is disposed on the frame and protrudes from the inner sidewall of the frame, and extends along the frame to form a closed structure. A plurality of support portions are disposed on the enclosure and arranged at intervals along the enclosure, and the support portions protrude in a direction away from the inner sidewall. The plurality of support portions are used to jointly support the edge of the silicon substrate along a first direction, which is perpendicular to the plane of the frame. The enclosure is used to cover the gap between the edge of the silicon substrate and the frame.

2. The bearing device according to claim 1, characterized in that, The support portion has a support surface for supporting the silicon substrate, the support surface being perpendicular to the first direction, and the enclosure portion has a guide slope, the guide slope having a first end near the inner sidewall and a second end away from the inner sidewall, the first end being flush with the support surface in the first direction, and the second end being lower than the support surface in the first direction.

3. The bearing device according to claim 2, characterized in that, The angle between the supporting surface and the guide slope is 1° to 89°.

4. The bearing device according to claim 2, characterized in that, The enclosure has a shielding surface, which is in the same spatial plane as the supporting surface. One end of the shielding surface is connected to the inner sidewall, and the other end of the shielding surface is connected to the first end of the guide slope. The shielding surface is used to face the gap between the silicon substrate and the frame.

5. The bearing device according to claim 2, characterized in that, The enclosure portion has an end face at the end away from the frame, the end face is parallel to the first direction, and one end of the end face in the first direction is connected to the second end of the guide slope.

6. The bearing device according to claim 2, characterized in that, The length of the support surface extending away from the inner wall of the frame is 0.1~0.2mm.

7. The bearing device according to claim 1, characterized in that, The inner sidewall has a top edge and a bottom edge opposite each other in the first direction, the bottom edge is connected to the enclosure portion, and the distance between the top edge and the bottom edge in the first direction is 0.7~1.5mm.

8. The bearing device according to claim 1, characterized in that, The frame includes two long side beams and two short side beams, which together form a rectangular frame.

9. The bearing device according to claim 8, characterized in that, Each of the long side beams and each of the short side beams is provided with at least one of the support portions.

10. A coating apparatus, characterized in that, Includes the support device as described in any one of claims 1-9.

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