Micro light emitting diode display device

Abstract

The application relates to the technical field of LED display, and discloses a micro light-emitting diode display device. The micro light-emitting diode display device comprises a driving backboard, a plurality of LED units, a wavelength conversion layer and a light filtering layer. The plurality of LED units are arranged on the driving backboard. The LED units emit mixed color light, and the mixed color light comprises first color light and second color light. The wavelength conversion layer is arranged on part of the LED units and is used for converting the mixed color light emitted by the corresponding LED units into third color light. The light filtering layer comprises first light filtering units and second light filtering units. At least three adjacent LED units form a full-color pixel point, wherein the wavelength conversion layer is arranged on one LED unit, the first light filtering unit is arranged on one LED unit, and the second light filtering unit is arranged on one LED unit. The application realizes efficient monolithic full-color display, improves light conversion efficiency, reduces process complexity, and realizes higher yield.

Description

Technical Field

[0001] This application belongs to the field of LED display technology, and specifically relates to a miniature light-emitting diode display device. Background Technology

[0002] MicroLED display technology refers to a display technology that uses LED light-emitting units with a size on the micrometer scale as pixels. In applications, MicroLED display technology enables the miniaturization and high resolution of display devices such as Augmented Reality (AR) and Virtual Reality (VR).

[0003] In related technologies, Micro LED achieves full-color display by using inorganic compound semiconductors to combine red, green, and blue (RGB) light. Achieving full-color display through three-color light combination requires high optical alignment and involves complex processing techniques. Utility Model Content

[0004] This application aims to address at least one of the technical problems existing in the prior art or related technologies.

[0005] Therefore, this application provides a miniature light-emitting diode display device, comprising: a driving backplane; a plurality of LED units arranged on the driving backplane, wherein the LED units emit mixed-color light, the mixed-color light including a first color light and a second color light; a wavelength conversion layer disposed on a portion of the LED units, for converting the mixed-color light emitted by the corresponding LED units into a third color light, wherein the first color light, the second color light, and the third color light are all different; a filter layer comprising a first filter unit and a second filter unit, wherein the first filter unit is disposed on a portion of the LED units, for filtering the second color light and allowing the first color light to pass through; the second filter unit is disposed on a portion of the LED units, for filtering the first color light and allowing the second color light to pass through; at least three adjacent LED units constitute a full-color pixel, wherein one LED unit is provided with the wavelength conversion layer, one LED unit is provided with the first filter unit, and one LED unit is provided with the second filter unit.

[0006] In one possible implementation, the LED unit includes a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer; the active layer includes a first quantum well for causing the LED unit to emit a first color light and a second quantum well for causing the LED unit to emit a second color light, wherein the first quantum well is provided in one or more pairs, and the second quantum well is provided in one or more pairs.

[0007] In one possible implementation, when multiple pairs of the first quantum well and the second quantum well are respectively provided, the multiple pairs of the first quantum well and the multiple pairs of the second quantum well are alternately stacked.

[0008] In one possible implementation, when multiple pairs of the first quantum well and the second quantum well are respectively provided, the multiple pairs of the first quantum well are stacked to form a first quantum well group, and the multiple pairs of the second quantum well are stacked to form a second quantum well group, and the second quantum well group is stacked with the first quantum well group.

[0009] In one possible implementation, the thickness of the first semiconductor layer ranges from 50 nm to 500 nm; the thickness of the active layer ranges from 100 nm to 500 nm; and the thickness of the second semiconductor layer ranges from 500 nm to 5 μm.

[0010] In one possible implementation, the material of the first quantum well comprises indium gallium nitride, wherein the molar composition of indium in the indium gallium nitride is 5% to 20%; and the material of the second quantum well comprises indium gallium nitride, wherein the molar composition of indium in the indium gallium nitride is 10% to 30%.

[0011] In one possible implementation, the driving backplane includes a driving circuit comprising a plurality of first contacts and at least one second contact, wherein the plurality of first contacts are disposed below the plurality of LED units in a one-to-one correspondence; wherein the first semiconductor layer of the plurality of LED units is electrically connected to the plurality of first contacts in a one-to-one correspondence, and the second semiconductor layer of the plurality of LED units is electrically connected to the second contact in a common manner.

[0012] In one possible implementation, the driving backplane includes: a driving circuit including a plurality of first contacts and at least one second contact, wherein the first contacts are located between adjacent LED units; the second semiconductor layers of the plurality of LED units are electrically connected to the plurality of first contacts in a one-to-one correspondence, and the first semiconductor layers of the plurality of LED units are electrically connected to the second contacts together.

[0013] In one possible implementation, the micro LED display device further includes: an isolation grid disposed on the driving backplate, having a plurality of grid holes corresponding one-to-one with the plurality of LED units; wherein the wavelength conversion layer fills a portion of the plurality of grid holes and covers or encloses the corresponding LED unit; wherein the filter layer is disposed in a portion of the plurality of grid holes and is located above the corresponding LED unit.

[0014] In one possible implementation, the micro LED display device further includes a filling layer that fills the grid holes and is located between the filter layer and the corresponding LED unit.

[0015] In one possible implementation, the micro LED display device further includes: a blue-green epitaxial structure disposed on the driving backplane, wherein the blue-green epitaxial structure is etched to form a plurality of LED units; the wavelength conversion layer is made of red quantum dots; wherein the first color light includes blue light, the second color light includes green light, and the wavelength conversion layer is used to convert the blue light and green light emitted by the corresponding LED units into red light.

[0016] The miniature light-emitting diode display device provided in this application can achieve at least the following technical effects:

[0017] The LED unit of this application emits mixed-color light, which includes a first color light and a second color light. That is, the first and second color lights are directly emitted by the LED unit without light conversion, resulting in more efficient color light. A wavelength conversion layer is disposed on the LED unit to convert the mixed-color light emitted by the corresponding LED unit into a third color light; that is, the wavelength conversion layer is used to convert the first and second color lights emitted by the LED unit into the third color light. The filter layer includes a first filter unit and a second filter unit. The first filter unit is disposed on a portion of the LED units to filter the second color light emitted by the corresponding LED units while allowing the first color light to pass through. The second filter unit is disposed on a portion of the LED units to filter the first color light emitted by the corresponding LED units while allowing the second color light to pass through. The first, second, and third colors of light are all different. At least three adjacent LED units constitute a full-color pixel. One LED unit has a wavelength conversion layer, one LED unit has a first filter unit, and one LED unit has a second filter unit. That is, efficient monolithic full-color display is achieved through the color mixing emitted by the LED units, the light conversion by the wavelength conversion layer, and the filtering effect of the filter layer. This improves light conversion efficiency, eliminates the need for high optical alignment, and reduces process complexity. Furthermore, this application can reduce process complexity, decrease the number of wafer bonding operations, and achieve higher yield.

[0018] The above general description and the description below are exemplary and illustrative only and are not intended to limit this application. Attached Figure Description

[0019] One or more embodiments are illustrated by way of example with reference to the accompanying drawings. These illustrations and drawings do not constitute a limitation on the embodiments. Elements having the same reference numerals in the drawings are shown as similar elements. The drawings are not to be scaled. And wherein:

[0020] Figure 1 A schematic structural diagram of a miniature light-emitting diode display device provided in one embodiment of this disclosure;

[0021] Figure 2 A schematic plan view of a portion of the structure of a miniature light-emitting diode display device provided in one embodiment of this disclosure;

[0022] Figure 3 for Figure 2 The illustrated embodiment provides a schematic diagram of the A1-A2 cross-sectional structure.

[0023] Figure 4 A schematic plan view of a portion of the structure of a miniature light-emitting diode display device provided in another embodiment of this disclosure;

[0024] Figure 5 for Figure 4 The illustrated embodiment provides a schematic diagram of the B1-B2 cross-sectional structure.

[0025] Figure 6 for Figure 4 A schematic diagram of the C1-C2 cross-sectional structure provided in the embodiment shown;

[0026] Figure 7 A schematic structural diagram of the driving substrate and the first bonding metal layer provided in the embodiments of this disclosure;

[0027] Figure 8 A schematic structural diagram of the substrate, LED epitaxial layer, conductive layer, and second bonding metal layer provided in an embodiment of this disclosure;

[0028] Figure 9 A schematic structural diagram of the first bonding metal layer and the second bonding metal layer fused into a bonding layer, provided for embodiments of this disclosure;

[0029] Figure 10 In order to be in Figure 9 The illustrated embodiment provides a schematic structural diagram of a structure in which multiple LED units are formed.

[0030] Figure 11 In order to be in Figure 10The illustrated embodiment provides a schematic structural diagram of a structure in which a passivation layer is formed.

[0031] Figure 12 In order to be in Figure 11 The illustrated embodiment provides a schematic structural diagram of the formation of a first electrode layer.

[0032] Figure 13 In order to be in Figure 12 The illustrated embodiment provides a schematic structural diagram of a structure in which a metal layer is formed.

[0033] Figure 14 In order to be in Figure 13 The illustrated embodiment provides a schematic structural diagram of an isolation barrier formed thereon.

[0034] Figure 15 In order to be in Figure 14 The illustrated embodiment provides a schematic structural diagram showing the formation of a wavelength conversion layer and a filling layer.

[0035] Figure 16 In order to be in Figure 9 The illustrated embodiment provides another schematic structural diagram showing a structure that forms multiple LED units.

[0036] Figure 17 In order to be in Figure 16 The illustrated embodiment provides a schematic structural diagram of a structure in which a passivation layer is formed.

[0037] Figure 18 In order to be in Figure 17 The illustrated embodiment provides a schematic structural diagram of the formation of a second electrode layer.

[0038] Figure 19 In order to be in Figure 18 The illustrated embodiment provides a schematic structural diagram of an isolation barrier formed thereon.

[0039] Figure 20 In order to be in Figure 19 The illustrated embodiment provides a schematic structural diagram showing the formation of a wavelength conversion layer and a filling layer.

[0040] Figure 21 In order to be in Figure 20 The illustrated embodiment provides a schematic structural diagram of a structure in which a filter layer is formed.

[0041] Figure 22 This is a schematic structural diagram of a display device provided in one embodiment of the present disclosure.

[0042] The reference numerals in the attached figures are as follows:

[0043] 100: Miniature LED display device; 101: Driving backplane; 102: LED unit; 1021: First semiconductor layer; 1022: Active layer; 1023: Second semiconductor layer; 103: Wavelength conversion layer; 104: First contact; 105: Conductive layer; 1051: First conductive layer; 1052: Second conductive layer; 106: First electrode layer; 1061: Second electrode layer; 107: Bonding layer; 1071: First bonding metal layer; 1072: Second bonding metal layer; 108: Passivation layer; 109: Isolation gate; 110: Grid hole; 111: Substrate; 112: LED epitaxial layer; 113: Metal layer; 114: Filler layer; 115: Filter layer; 1151: First filter unit; 1152: Second filter unit;

[0044] 200: Display device. Detailed Implementation

[0045] To provide a more detailed understanding of the features and technical content of the embodiments of this disclosure, the implementation of the embodiments of this disclosure will be described in detail below with reference to the accompanying drawings. The accompanying drawings are for illustrative purposes only and are not intended to limit the embodiments of this disclosure. In the following technical description, for ease of explanation, several details are used to provide a full understanding of the disclosed embodiments. However, one or more embodiments may still be implemented without these details. In other cases, well-known structures and devices may be simplified in their depiction to simplify the drawings.

[0046] The terms "first," "second," etc., used in the specification, claims, and accompanying drawings of this disclosure are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate for the embodiments of this disclosure described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion.

[0047] In this disclosure, the terms "upper," "lower," "inner," "middle," "outer," "front," and "rear," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. These terms are primarily for better description of the embodiments of this disclosure and their implementations, and are not intended to limit the indicated devices, elements, or components to having a specific orientation, or to require them to be constructed and operated in a specific orientation. Furthermore, some of the aforementioned terms may be used to indicate other meanings besides orientation or positional relationship; for example, the term "upper" may in some cases indicate a dependency or connection relationship. Those skilled in the art can understand the specific meaning of these terms in the embodiments of this disclosure according to the specific circumstances.

[0048] Furthermore, the terms "set up," "connect," and "fix" should be interpreted broadly. For example, "connection" can be a fixed connection, a detachable connection, or an integral structure; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, or it can be an internal connection between two devices, components, or parts. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of this disclosure according to the specific circumstances.

[0049] Unless otherwise stated, the term "multiple" means two or more.

[0050] The term "and / or" describes an association between objects, indicating that three relationships can exist. For example, A and / or B means: A or B, or A and B.

[0051] It should be noted that, unless otherwise specified, the embodiments and features described in the present disclosure can be combined with each other.

[0052] It should be noted that, as used in the embodiments of this disclosure, the term "layer" refers to a portion of material comprising a region having a certain thickness. A layer may extend over the entire lower or upper structure, or may have a extent smaller than that of the lower or upper structure. Furthermore, a layer may be a region of a homogeneous or heterogeneous continuous structure, with a thickness less than the thickness of the continuous structure. For example, a layer may be located between the top and bottom surfaces of a continuous structure, or between any pair of horizontal planes therebetween. A layer may extend horizontally, vertically, and / or along a conical surface.

[0053] It should be noted that the term "micro" as used in the embodiments of this disclosure refers to the descriptive size of certain devices or structures according to the embodiments of this application. The term "micro" as used herein is intended to indicate a scale of 0.1 to 100 μm. However, it should be understood that the embodiments of this application are not necessarily limited thereto, and certain aspects of the embodiments can be applied to larger and possibly smaller size scales.

[0054] In related technologies, when using inorganic compound semiconductors to achieve red, green, and blue (RGB) tri-color light combining, the RGB vertical stacking structure requires three wafer bonding operations, affecting the device yield. Furthermore, achieving full-color tri-color light combining requires high optical alignment, making the fabrication process complex. When using aluminum gallium indium phosphide (III-V group) semiconductor materials (AlGaInP system) as the red light compound semiconductor, there is also the problem of thermal degradation.

[0055] In view of this, such as Figures 1 to 21As shown, this embodiment of the present disclosure provides a miniature light-emitting diode display device 100, including a driving backplane 101, a plurality of LED units 102, a wavelength conversion layer 103, and a filter layer 115. The plurality of LED units 102 are arranged on the driving backplane 101. The LED units 102 emit mixed-color light, which includes a first color light and a second color light. The wavelength conversion layer 103 is disposed on a portion of the LED units 102, and is used to convert the mixed-color light emitted by the corresponding LED unit 102 into a third color light. The first color light, the second color light, and the third color light are all different. The filter layer 115 includes a first filter unit 1151 and a second filter unit 1152. The first filter unit 1151 is disposed on a portion of the LED units 102, and is used to filter the second color light while allowing the first color light to pass through. The second filter unit 1152 is disposed on a portion of the LED units 102, and is used to filter the first color light while allowing the second color light to pass through. At least three adjacent LED units 102 constitute a full-color pixel, wherein a wavelength conversion layer 103 is provided on one LED unit 102, a first filter unit 1151 is provided on one LED unit 102, and a second filter unit 1152 is provided on one LED unit 102.

[0056] Multiple LED units 102 are arranged on the driving backplate 101. Specifically, the multiple LED units 102 are arranged on one side surface of the driving backplate 101. In this embodiment, the arrangement of the multiple LED units 102 on the driving backplate 101 is not limited; it can be regular or irregular. For example, the multiple LED units 102 can be arranged at intervals on one side surface of the driving backplate 101.

[0057] LED unit 102 emits mixed-color light, which includes a first color light and a second color light. In other words, the first color light and the second color light are directly emitted by LED unit 102 without light conversion, thus obtaining more efficient color light.

[0058] A wavelength conversion layer 103 is disposed on a portion of the LED units 102. Specifically, among the multiple LED units 102, a portion of the LED units 102 have the wavelength conversion layer 103 disposed on them, while the other portion of the LED units 102 do not have the wavelength conversion layer 103 disposed on them. The wavelength conversion layer 103 is used to convert the mixed-color light emitted by the corresponding LED unit 102 into a third-color light. For example, the mixed-color light emitted by the LED unit 102 located directly below the wavelength conversion layer 103 is converted into a third-color light by the wavelength conversion layer 103 to obtain third-color light. In this embodiment, the wavelength conversion layer 103 can be prepared by an exposure and development process.

[0059] The first, second, and third colors of light are all different to achieve RGB full-color display of the display device. For example, the first, second, and third colors of light are blue, green, and red, respectively. Another example is green, blue, and red, respectively. Blue and green light are directly emitted by LED unit 102, resulting in more efficient blue and green light. Red light is obtained by converting the blue and green light emitted by LED unit 102 through wavelength conversion layer 103, improving luminous efficiency and stability. Furthermore, green light is directly emitted by LED unit 102 without light conversion, resulting in more efficient green light and improved green light reliability for reliable full-color display. It also reduces the patterning process required for one green color conversion, lowers process complexity, and achieves higher yield.

[0060] The filter layer 115 includes a first filter unit 1151 and a second filter unit 1152. The first filter unit 1151 is disposed on a portion of the LED units 102, that is, the first filter unit 1151 is disposed on a portion of the plurality of LED units 102. The first filter unit 1151 is used to filter the second color light emitted by the LED unit 102 below it and allow the first color light to pass through. The second filter unit 1152 is disposed on a portion of the LED units 102, that is, the second filter unit 1152 is disposed on a portion of the plurality of LED units 102. The second filter unit 1152 is used to filter the first color light emitted by the LED unit 102 below it and allow the second color light to pass through.

[0061] Combination Figure 1 As shown, Figure 1The dashed box at point P indicates a full-color pixel. At least three adjacent LED units 102 constitute a full-color pixel, forming a multi-sub-pixel pattern. One LED unit 102 has a wavelength conversion layer 103, which converts the emitted mixed-color light into a third color. Another LED unit 102 has a first filter unit 1151, which filters the emitted mixed-color light, allowing only the first color light to pass through. A third LED unit 102 has a second filter unit 1152, which filters the emitted mixed-color light, allowing only the second color light to pass through. Through the emission of mixed-color light from the LED unit 102, the light conversion by the wavelength conversion layer 103, and the filtering effect of the filter layer 115, a highly efficient single-chip full-color display is achieved, improving light conversion efficiency, eliminating the need for high optical alignment, and reducing manufacturing complexity. Moreover, only one wafer bonding operation is required, reducing the number of wafer bonding operations, lowering process complexity, and achieving higher yield. Furthermore, when the third color light is red, the red light is obtained through color conversion, which can improve luminous efficiency and stability, avoid or reduce thermal decay of red light, and extend the lifespan of the device.

[0062] In a specific application example, the first color light is blue light. The second color light is green light. The third color light is red light. LED unit 102 emits blue and green light. The first filter unit 1151 filters the green light and allows the blue light to pass through. The second filter unit 1152 filters the blue light and allows the green light to pass through. The wavelength conversion layer 103 converts the blue and green light into red light to achieve full-color display on a single chip.

[0063] In another specific application example, the first color light is green. The second color light is blue. The third color light is red. The LED unit 102 emits blue and green light. The first filter unit 1151 filters the blue light and allows the green light to pass through. The second filter unit 1152 filters the green light and allows the blue light to pass through. The wavelength conversion layer 103 converts the blue and green light into red light to achieve full-color display on a single chip.

[0064] In this embodiment, the driving backplane 101 refers to the material on which subsequent material layers are added. The driving backplane 101 itself may be patterned. The material added to the top of the driving backplane 101 may be patterned or may remain unpatterned. Furthermore, the driving backplane 101 may include a wide variety of semiconductor materials, such as silicon, silicon carbide, gallium nitride, germanium, gallium arsenide, indium phosphide, etc. Alternatively, the driving backplane 101 may be made of a non-conductive material, such as glass, plastic, or sapphire wafer. Further alternatively, the driving backplane 101 may have semiconductor devices or circuits formed therein.

[0065] In one possible implementation, at least three adjacent LED units 102 constitute a full-color pixel, wherein one LED unit 102 is provided with a wavelength conversion layer 103, one LED unit 102 is provided with a first filter unit 1151, and one LED unit 102 is not provided with a wavelength conversion layer 103 and a filter layer 1151, thereby enabling multi-color or full-color display of the display device.

[0066] In one possible implementation, at least three adjacent LED units 102 constitute a full-color pixel, wherein one LED unit 102 is provided with a wavelength conversion layer 103, one LED unit 102 is provided with a second filter unit 1152, and one LED unit 102 is not provided with a wavelength conversion layer 103 and a filter layer 1152, thereby realizing multi-color or full-color display of the display device.

[0067] In some embodiments, such as Figure 3 , Figure 5 and Figure 6 As shown, the LED unit 102 includes a first semiconductor layer 1021, a second semiconductor layer 1023, and an active layer 1022 formed between the first semiconductor layer 1021 and the second semiconductor layer 1023. The active layer 1022 includes a first quantum well for causing the LED unit 102 to emit light of a first color and a second quantum well for causing the LED unit 102 to emit light of a second color. The first quantum wells and the second quantum wells are provided in one or more pairs.

[0068] An active layer 1022 is formed between a first semiconductor layer 1021 and a second semiconductor layer 1023. For example, the first semiconductor layer 1021, the active layer 1022, and the second semiconductor layer 1023 are stacked. The first semiconductor layer 1021 can transport holes to the active layer 1022, and the second semiconductor layer 1023 can transport electrons to the active layer 1022. Holes and electrons recombine in the active layer 1022, enabling the LED unit 102 to emit light.

[0069] In this embodiment, the first semiconductor layer 1021 can be a P-type semiconductor layer. The method of forming the first semiconductor layer 1021 is not limited. For example, the first semiconductor layer 1021 can be formed by doping.

[0070] In this embodiment, the second semiconductor layer 1023 can be an N-type semiconductor layer. The method of forming the second semiconductor layer 1023 is not limited. For example, the second semiconductor layer 1023 can be formed by doping.

[0071] In this embodiment, one or more pairs of first quantum wells and one or more pairs of second quantum wells are provided. Specifically, the active layer 1022 includes one pair of first quantum wells and one pair of second quantum wells. Alternatively, the active layer 1022 includes one pair of first quantum wells and multiple pairs of second quantum wells. Alternatively, the active layer 1022 includes multiple pairs of first quantum wells and one pair of second quantum wells. Alternatively, the active layer 1022 includes multiple pairs of first quantum wells and multiple pairs of second quantum wells. The first and second quantum wells can be stacked, with the first quantum wells used to enable the LED unit 102 to emit a first color of light, and the second quantum wells used to enable the LED unit 102 to emit a second color of light, thereby enabling the LED unit 102 to emit mixed-color light.

[0072] It should be noted that each pair of first quantum wells includes a well and a barrier. Each pair of second quantum wells includes a well and a barrier.

[0073] In some embodiments, when multiple pairs of first quantum wells and second quantum wells are respectively provided, the multiple pairs of first quantum wells and multiple pairs of second quantum wells are alternately stacked.

[0074] By alternately stacking multiple pairs of second quantum wells and multiple pairs of first quantum wells, the ability of the first color light and the second color light to emit light simultaneously is enhanced, thereby improving the uniformity of light emission.

[0075] In some embodiments, when multiple pairs of first quantum wells and second quantum wells are respectively provided, multiple pairs of first quantum wells are stacked to form a first quantum well group, and multiple pairs of second quantum wells are stacked to form a second quantum well group, and the second quantum well group is stacked with the first quantum well group.

[0076] By stacking the second quantum well group with the first quantum well group, the fabrication difficulty is reduced and the structural stability is improved.

[0077] In some embodiments, the thickness of the first semiconductor layer 1021 ranges from 50 nm to 500 nm. The thickness of the active layer 1022 ranges from 100 nm to 500 nm. The thickness of the second semiconductor layer 1023 ranges from 500 nm to 5 μm. This enables the LED unit 102 to effectively perform electron and hole injection, transport, and recombination to achieve efficient electro-optical conversion.

[0078] Optionally, the thickness of the first semiconductor layer 1021 is 50nm, 100nm, 200nm, 300nm, 400nm, 500nm, or other values ​​between 50nm and 500nm.

[0079] Optionally, the thickness of the active layer 1022 is 100nm, 200nm, 300nm, 400nm, 500nm or other values ​​between 100nm and 500nm.

[0080] Optionally, the thickness of the second semiconductor layer 1023 is 500 nm, 1 μm, 2 μm, 3 μm, 4 μm, 5 μm or other values ​​between 500 nm and 5 μm.

[0081] In some embodiments, the material of the first quantum well comprises indium gallium nitride (IGN), wherein the molar composition of indium in the IGN is 5% to 20%. The material of the second quantum well comprises IGN, wherein the molar composition of indium in the IGN is 10% to 30%.

[0082] In this embodiment, the material of the first quantum well includes indium gallium nitride (InGaN), in which the molar composition of indium (In) is 5% to 20%, so that the LED unit 102 emits a first color light. For example, the first color light can be blue light.

[0083] In this embodiment, the material of the second quantum well includes indium gallium nitride (InGaN), in which the molar composition of indium (In) is 10% to 30%, so that the LED unit 102 emits a second color light. For example, the second color light can be green light.

[0084] In some embodiments, such as Figure 1 , Figure 3 as well as Figures 10 to 14 As shown, the driving backplate 101 includes a driving circuit. The driving circuit includes a plurality of first contacts 104 and at least one second contact (not shown in the figure). The plurality of first contacts 104 are disposed below the plurality of LED units 102 in a one-to-one correspondence. The first semiconductor layer 1021 of the plurality of LED units 102 is electrically connected to the plurality of first contacts 104 in a one-to-one correspondence, and the second semiconductor layer 1023 of the plurality of LED units 102 is electrically connected to the second contact together.

[0085] The driving backplane 101 includes a driving circuit, which includes a plurality of first contacts 104 and at least one second contact. The driving circuit is electrically connected to a plurality of LED units 102 through the plurality of first contacts 104 and at least one second contact. The plurality of first contacts 104 are disposed one-to-one below the plurality of LED units 102, so that the plurality of first contacts 104 correspond one-to-one with and are independently electrically connected to the first semiconductor layer 1021 of the plurality of LED units 102.

[0086] The first semiconductor layer 1021 of the multiple LED units 102 is electrically connected to the multiple first contacts 104 in a one-to-one correspondence, and the second semiconductor layer 1023 of the multiple LED units 102 is electrically connected to the second contacts together, so that the driving circuit can drive each LED unit 102 to emit light individually. The ratio of the first color light and the second color light emitted by each LED unit 102 can also be adjusted by controlling the current of the driving circuit.

[0087] In a specific application example, the first contact 104 can be an anode metal contact, and the second contact can be a cathode metal contact. Multiple first contacts 104 correspond one-to-one with and are independently electrically connected to the first semiconductor layers 1021 of multiple LED units 102. The second semiconductor layers 1023 of the multiple LED units 102 are electrically connected to the second contact. That is, the second contact can be the common electrode contact of the multiple LED units 102 to form a common cathode structure. An anode voltage can be applied to each LED unit 102 individually through the first contact 104, providing a separate drive signal to achieve individual control of each LED unit 102 emitting mixed-color light.

[0088] In this embodiment, the driving backplane 101 may be provided with a circuit layer including complementary metal oxide semiconductor (CMOS) devices or thin film field effect transistor (TFT) devices, etc., and these CMOS devices or TFT devices can constitute a driving circuit.

[0089] Optionally, such as Figure 1 , Figures 10 to 15 As shown, the miniature light-emitting diode display device 100 further includes a first conductive layer 1051 and a first electrode layer 106. The first conductive layer 1051 is disposed between the driving backplate 101 and the plurality of LED units 102, and is used to electrically connect the first contact 104 to the first semiconductor layer 1021 of the corresponding LED unit 102. The first electrode layer 106 at least covers the top surface of the plurality of LED units 102, and is used to electrically connect the second contact to the second semiconductor layer 1023 of the plurality of LED units 102.

[0090] In this embodiment, multiple first contacts 104 are located directly below the first semiconductor layer 1021 of multiple LED units 102, and the first contacts 104 are electrically connected to the first semiconductor layer 1021 of the corresponding LED unit 102 through the first conductive layer 1051, so as to realize that the multiple first contacts 104 and the first semiconductor layer 1021 of the multiple LED units 102 are corresponded one-to-one and independently electrically connected.

[0091] In this embodiment, the driving circuit is electrically connected to the first semiconductor layer 1021 of the multiple LED units 102 through the first conductive layer 1051, and the second contact is electrically connected to the second semiconductor layer 1023 of the multiple LED units 102 through the first electrode layer 106. That is, the driving circuit is electrically connected to the multiple LED units 102 through the first conductive layer 1051 and the first electrode layer 106.

[0092] The material of the first conductive layer 1051 is not limited, such as N2Au, ITO, etc. The material of the first electrode layer 106 can be a transparent conductive material, such as ITO, AZO, etc.

[0093] In a specific application example, the first contact 104 can be an anode metal contact, and the second contact can be a cathode metal contact. Multiple first contacts 104 are connected one-to-one and independently to the first semiconductor layers 1021 of multiple LED units 102 via a first conductive layer 1051. The second semiconductor layers 1023 of the multiple LED units 102 are connected to the second contacts via a first electrode layer 106 to form a common cathode structure.

[0094] Optionally, such as Figure 1 as well as Figures 13 to 15 As shown, the micro LED display device 100 also includes a metal layer 113. The metal layer 113 is disposed on the side of the first electrode layer 106 away from the driving backplate 101. The metal layer 113 is used to connect the first electrode layer 106 and the second contact, so as to realize the common electrical connection of the second semiconductor layer 1023 of the multiple LED units 102 to the second contact.

[0095] In this embodiment, the material of the metal layer 113 may include Cr, Au, Al, Pt, Ag, etc.

[0096] In some embodiments, such as Figure 5 , Figure 6 as well as Figures 16 to 18 As shown, the driving backplane 101 includes a driving circuit. The driving circuit includes a plurality of first contacts 104 and at least one second contact (not shown in the figure). The first contacts 104 are located between adjacent LED units 102. The second semiconductor layers 1023 of the plurality of LED units 102 are electrically connected to the plurality of first contacts 104 in a one-to-one correspondence, and the first semiconductor layers 1021 of the plurality of LED units 102 are electrically connected to the second contact together.

[0097] Specifically, each of the multiple first contacts 104 is located between two adjacent LED units 102, so as to realize that the multiple first contacts 104 correspond one-to-one with the second semiconductor layer 1023 of the multiple LED units 102 and are independently electrically connected.

[0098] In this embodiment, the second semiconductor layer 1023 of the plurality of LED units 102 is electrically connected to the plurality of first contacts 104 in a one-to-one correspondence, and the first semiconductor layer 1021 of the plurality of LED units 102 is electrically connected to the second contacts in common, so that the driving circuit can drive each LED unit 102 to emit light individually, and the ratio of the first color light and the second color light emitted by each LED unit 102 can also be adjusted by controlling the current of the driving circuit.

[0099] In a specific application example, the first contact 104 can be a cathode metal contact, and the second contact can be an anode metal contact. Multiple first contacts 104 correspond one-to-one with and are independently electrically connected to the second semiconductor layers 1023 of multiple LED units 102. The first semiconductor layers 1021 of the multiple LED units 102 are electrically connected to the second contacts; that is, the second contacts can be the common electrode contacts of the multiple LED units 102 to form a common anode structure. A cathode voltage can be applied to each LED unit 102 individually through the first contacts 104, providing a separate drive signal to achieve individual control of each LED unit 102 emitting mixed-color light.

[0100] Optionally, such as Figure 5 , Figure 6 as well as Figures 18 to 21 As shown, the micro LED display device 100 further includes a second conductive layer 1052 and a second electrode layer 1061. The second conductive layer 1052 is disposed between the driving backplate 101 and the first semiconductor layer 1021 of the plurality of LED units 102, and is used to electrically connect the second contact to the first semiconductor layer 1021 of the plurality of LED units 102. The second electrode layer 1061 at least covers the second semiconductor layer 1023 of the plurality of LED units 102, and is used to connect the first contact 104 to the second semiconductor layer 1023 of the plurality of LED units 102.

[0101] In this embodiment, the first contact 104 is located between adjacent LED units 102. The first contact 104 is electrically connected to the second semiconductor layer 1023 of the corresponding LED unit 102 through the second electrode layer 1061, thereby realizing that multiple first contacts 104 are one-to-one corresponded to and independently electrically connected to the second semiconductor layer 1023 of multiple LED units 102.

[0102] In this embodiment, the second contact is electrically connected to the first semiconductor layer 1021 of the multiple LED units 102 through the second conductive layer 1052, and the first contact 104 is electrically connected to the second semiconductor layer 1023 of the corresponding LED unit 102 through the second electrode layer 1061. That is, the driving circuit is electrically connected to the multiple LED units 102 through the second electrode layer 1061 and the second conductive layer 1052.

[0103] It should be noted that the material of the second conductive layer 1052 is not limited, such as N2Au, ITO, etc. The material of the second electrode layer 1061 can be a transparent conductive material, such as ITO, AZO, etc.

[0104] In another specific application example, the first contact 104 can be a cathode metal contact, and the second contact can be an anode metal contact. Multiple first contacts 104 are connected one-to-one and independently to the second semiconductor layers 1023 of multiple LED units 102 via the second electrode layer 1061. The first semiconductor layers 1021 of the multiple LED units 102 are connected to the second contacts via the second conductive layer 1052 to form a common anode structure.

[0105] Optionally, such as Figures 1 to 6 , Figures 11 to 15 ,as well as Figures 17 to 21 As shown, the micro LED display device 100 further includes a bonding layer 107 and a passivation layer 108. The bonding layer 107 is disposed between the driving backplane 101 and the LED units 102, and is used to connect the driving backplane 101 and the plurality of LED units 102. The passivation layer 108 covers at least the plurality of LED units 102 and exposes the top surface of the second semiconductor layer 1023 of the plurality of LED units 102.

[0106] A bonding layer 107 is disposed between the driving backplane 101 and the LED units 102. Specifically, the bonding layer 107 may be disposed between the driving backplane 101 and the first conductive layer 1051 to connect the driving backplane 101 and the multiple LED units 102. Alternatively, the bonding layer 107 may be disposed between the driving backplane 101 and the second conductive layer 1052 to connect the driving backplane 101 and the multiple LED units 102.

[0107] The passivation layer 108 covers at least a plurality of LED units 102 and exposes the top surface of the second semiconductor layer 1023 of the plurality of LED units 102 to protect the LED units 102 and improve the photoelectric performance and reliability of the LED units 102.

[0108] A specific application example, combined with Figure 1 As shown, the passivation layer 108 exposes the top surface of the plurality of LED units 102, that is, the passivation layer 108 exposes the second semiconductor layer 1023 of the plurality of LED units 102, which facilitates the first electrode layer 106 to electrically connect the second contact to the second semiconductor layer 1023 of the plurality of LED units 102.

[0109] Another concrete application example, combined with Figure 6 As shown, the passivation layer 108 exposes the top surface of the plurality of LED units 102, that is, the passivation layer 108 exposes the second semiconductor layer 1023 of the plurality of LED units 102, so as to facilitate the first contact 104 to be electrically connected to the second semiconductor layer 1023 of the corresponding LED unit 102 through the second electrode layer 1061.

[0110] Optionally, the passivation layer 108 may be made of inorganic or organic materials. Inorganic materials include SiO2, AlN, Al2O3, etc. Organic materials include BCB, etc.

[0111] Optionally, the bonding layer 107 may be made of a conductive material, such as a metal or metal alloy.

[0112] In some embodiments, such as Figure 1 , Figure 14 , Figure 15 as well as Figures 19 to 21 As shown, the micro LED display device 100 also includes an isolation gate 109. The isolation gate 109 is disposed on the driving backplate 101 and has multiple grid holes 110 corresponding one-to-one with the multiple LED units 102. A wavelength conversion layer 103 fills a portion of the multiple grid holes 110 and covers or encloses the corresponding LED unit 102. A light filter layer 115 is disposed on a portion of the multiple grid holes 110 and is located above the corresponding LED unit 102.

[0113] In this embodiment, multiple grid holes 110 correspond one-to-one with multiple LED units 102. For example, multiple grid holes 110 are arranged one-to-one around multiple LED units 102, which helps to improve brightness, efficiency, and light color performance, and protects the LED units 102. It is understood that the arrangement of the multiple grid holes 110 is not limited; it can be regular or irregular.

[0114] In this embodiment, the wavelength conversion layer 103 fills a portion of the grid holes 110 and covers or encloses the corresponding LED unit 102 to convert the mixed-color light emitted by the corresponding LED unit 102 into a third-color light. By covering or enclosing the corresponding LED unit 102 with the wavelength conversion layer 103, the light emitted from the top and side surfaces of the LED unit 102 can be effectively utilized, and the LED unit 102 can be protected, improving yield. Furthermore, by covering or enclosing the corresponding LED unit 102 with the wavelength conversion layer 103, the distance between the wavelength conversion layer 103 and the corresponding LED unit 102 can be reduced, thereby improving the light conversion efficiency of the micro light-emitting diode display device 100.

[0115] In this embodiment, the filter layer 115 is disposed in a portion of the grid holes 110 among the plurality of grid holes 110 and is located above the corresponding LED unit 102, thereby filtering the second color light and allowing the first color light to pass through, or filtering the first color light and allowing the second color light to pass through.

[0116] In this embodiment, the material of the isolation barrier 109 can be black photoresist, metal, etc. Among them, metals include Cr, Al, Ag, etc.

[0117] In this embodiment, the grid hole 110 can be formed by dry etching, which can etch the sidewall of the grid hole 110 into a bevel and make the angle between the sidewall of the grid hole 110 and the upper surface of the isolation gate 109 obtuse.

[0118] Optionally, the LED unit 102 is located at the center of the grid aperture 110 in which it is located, so as to improve the uniformity of light emission of the LED unit 102.

[0119] Optionally, the micro LED display device 100 may also include a reflective layer. The reflective layer is disposed on the surface of the isolation gate 109. The reflective layer can block light leakage from the sidewalls of the LED unit 102 and also reflect the light emitted by the LED unit 102, thereby improving the wavelength conversion efficiency of the wavelength conversion layer 103.

[0120] Optionally, the upper surface of the wavelength conversion layer 103 is flush with or lower than the upper surface of the isolation barrier 109.

[0121] Optionally, the upper surface of the filter layer 115 is flush with or lower than the upper surface of the isolation barrier 109.

[0122] In some embodiments, such as Figure 1 , Figure 15 , Figure 20 and Figure 21 As shown, the miniature light-emitting diode display device 100 also includes a filling layer 114. The filling layer 114 fills the grid holes 110. The filling layer 114 is located between the light filter layer 115 and the corresponding LED unit 102.

[0123] In this embodiment, the filler layer 114 serves to support and protect the LED unit 102. The material of the filler layer 114 may include BCB, epoxy resin, etc.

[0124] Combination Figure 9 and Figure 10 As shown, in some embodiments, the Micro LED microdisplay chip 100 further includes a blue-green epitaxial structure disposed on a driving backplane, which is etched to form multiple LED units 102. The wavelength conversion layer 103 is made of red quantum dots. The first color light includes blue light, and the second color light includes green light. The wavelength conversion layer is used to convert the blue and green light emitted by the corresponding LED units 102 into red light.

[0125] In this embodiment, the LED epitaxial layer 112 can be a blue-green epitaxial structure, so that the LED unit 102 formed by etching the blue-green epitaxial structure can emit blue and green light. The blue and green light are directly emitted by the LED unit 102 without light conversion, thereby obtaining more efficient blue and green light.

[0126] In this embodiment, the wavelength conversion layer 103 is made of red quantum dots to convert the blue and green light emitted by the LED unit 102 into red light. The red quantum dots can be, for example, InP / CdSe-based quantum dots or perovskite-based quantum dots.

[0127] Optionally, the wavelength range of the first color light is 440nm to 475nm. The wavelength range of the second color light is 500nm to 560nm. The wavelength range of the third color light is 600nm to 700nm. This enables the wavelength conversion layer 103 to convert the mixed color light emitted by the LED unit 102 into the third color light.

[0128] A specific application example:

[0129] The structure and fabrication of the miniature light-emitting diode display device 100 are described below using a common cathode structure as an example. It is understood that... Figure 2 This is a planar structural diagram that can be used to illustrate a portion of the structure of the miniature light-emitting diode display device 100 in this example. Figure 3 This is a cross-sectional view that can be used to illustrate a portion of the structure of the miniature LED display device 100 in this example.

[0130] like Figure 7 As shown, a drive backplane 101 is provided. The drive backplane 101 includes a drive circuit having a plurality of first contacts 104 and at least one second contact (not shown). The first contacts 104 are anode metal contacts, and the second contacts are cathode metal contacts. The plurality of first contacts 104 are spaced apart. A first bonding metal layer 1071 is formed on the drive backplane 101. The first bonding metal layer 1071 can be formed by deposition.

[0131] like Figure 8 As shown, a substrate 111 is provided. The material of the substrate 111 can be silicon, sapphire, etc. An LED epitaxial layer 112 is grown on the substrate 111. The LED epitaxial layer 112 (blue-green light epitaxial structure) includes a first semiconductor layer 1021, an active layer 1022, and a second semiconductor layer 1023 stacked together. The first semiconductor layer 1021 is a P-type semiconductor layer, and the second semiconductor layer 1023 is an N-type semiconductor layer. A conductive layer 105 is formed on the LED epitaxial layer 112. A second bonding metal layer 1072 is formed on the conductive layer 105. The second bonding metal layer 1072 can be formed by deposition.

[0132] like Figure 9 As shown, the substrate 111 is flipped so that the second bonding metal layer 1072 fuses with the first bonding metal layer 1071 to form a bonding layer 107, thereby bonding the LED epitaxial layer 112 to the driver backplane 101. Then the substrate 111 is peeled off. The substrate 111 can be peeled off by methods such as laser lift-off, dry etching, wet etching, and mechanical polishing.

[0133] like Figure 10 As shown, the LED epitaxial layer 112 is etched to form a plurality of LED units 102, which are spaced apart. The conductive layer 105 and bonding layer 107 are etched to expose the upper surface of the driving backplane 101 located between two adjacent LED units 102. Specifically, the conductive layer 105 is etched to form a first conductive layer 1051. The plurality of LED units 102 are located directly above a plurality of first contacts 104, and the first semiconductor layer 1021 of the plurality of LED units 102 is electrically connected to the plurality of first contacts 104 in a one-to-one correspondence through the first conductive layer 1051 and the bonding layer 107.

[0134] like Figure 11 As shown, a passivation layer 108 is formed, which can cover part of the upper surface of the drive backplate 101, the side of the bonding layer 107, the side of the first conductive layer 1051, and the LED unit 102. Through holes are formed in the passivation layer 108 at positions corresponding to the second semiconductor layer 1023 of the plurality of LED units 102 to expose part of the second semiconductor layer 1023 of the plurality of LED units 102.

[0135] like Figure 12 As shown, a first electrode layer 106 is formed, which covers a passivation layer 108 and a second semiconductor layer 1023 of multiple LED units 102.

[0136] like Figure 13 As shown, a metal layer 113 is formed. The metal layer 113 may cover the surface of the first electrode layer 106 located between two adjacent LED units 102. The second semiconductor layer 1023 of the plurality of LED units 102 is electrically connected to the second contact through the first electrode layer 106 and the metal layer 113.

[0137] like Figure 14 As shown, an isolation barrier 109 is formed. The isolation barrier 109 has a plurality of grid holes 110, which surround a plurality of LED units 102 in a one-to-one correspondence.

[0138] like Figure 15 As shown, a wavelength conversion layer 103 and a filling layer 114 are formed. The wavelength conversion layer 103 and the filling layer 114 are formed on the isolation gate 109. The wavelength conversion layer 103 fills a portion of the grid holes 110 and covers the corresponding LED unit 102. The filling layer 114 fills a portion of the grid holes 110 and covers the corresponding LED unit 102. The wavelength conversion layer 103 and the filling layer 114 fill different grid holes 110 respectively.

[0139] like Figure 1 As shown, Figure 1Can be used to illustrate Figure 15 The diagram shows a structure in which a filter layer is formed. A filter layer 115 is formed. The filter layer 115 is disposed on the filler layer 114. The filter layer 115 includes a first filter unit 1151 and a second filter unit 1152. The first filter unit 1151 and the second filter unit 1152 correspond to different LED units 102.

[0140] Another specific application example

[0141] The structure and fabrication of the miniature light-emitting diode display device 100 are described below using a common anode structure as an example. It should be noted that... Figure 4 This is a planar structural diagram that can be used to illustrate part of the structure of the miniature light-emitting diode display device in this example. Figure 5 and Figure 6 All of these can be used to illustrate a partial structure of the miniature LED display device 100 in this example, through cross-sectional views.

[0142] like Figure 7 As shown, a drive backplane 101 is provided. The drive backplane 101 includes a drive circuit having a plurality of first contacts 104 and at least one second contact (not shown). The first contacts 104 are cathode metal contacts, and the second contacts are anode metal contacts. The plurality of first contacts 104 are spaced apart. A first bonding metal layer 1071 is formed on the drive backplane 101. The first bonding metal layer 1071 can be formed by deposition.

[0143] like Figure 8 As shown, a substrate 111 is provided. The material of the substrate 111 can be silicon, sapphire, etc. An LED epitaxial layer 112 is grown and formed on the substrate 111. The LED epitaxial layer 112 includes a first semiconductor layer 1021, an active layer 1022, and a second semiconductor layer 1023 stacked together. The first semiconductor layer 1021 is a P-type semiconductor layer, and the second semiconductor layer 1023 is an N-type semiconductor layer. A conductive layer 105 is formed on the LED epitaxial layer 112. A second bonding metal layer 1072 is formed on the conductive layer 105. The second bonding metal layer 1072 can be formed by deposition.

[0144] like Figure 9 As shown, the substrate 111 is flipped so that the second bonding metal layer 1072 fuses with the first bonding metal layer 1071 to form a bonding layer 107, thereby bonding the LED epitaxial layer 112 to the driver backplane 101. Then the substrate 111 is peeled off. The substrate 111 can be peeled off by methods such as laser lift-off, dry etching, wet etching, and mechanical polishing.

[0145] like Figure 16As shown, the LED epitaxial layer 112 is etched to form a plurality of LED units 102. The plurality of LED units 102 are spaced apart, with first contacts 104 located between two adjacent LED units 102. The conductive layer 105 and the bonding layer 107 are etched to expose the plurality of first contacts 104. Specifically, the conductive layer 105 is etched to form a second conductive layer 1052, which is used to electrically connect the first semiconductor layers 1021 of the plurality of LED units 102 to the second contacts.

[0146] like Figure 17 As shown, a passivation layer 108 is formed, which covers a portion of the upper surface of the drive backplate 101, the side surface of the bonding layer 107, the side surface of the second conductive layer 1052, and the LED units 102. Through-holes are formed in the passivation layer 108 at locations corresponding to the second semiconductor layers 1023 of the plurality of LED units 102 to expose the second semiconductor layers 1023 of the plurality of LED units 102. Through-holes are also formed in the passivation layer 108 at locations corresponding to the plurality of first contacts 104 to expose the plurality of first contacts 104.

[0147] like Figure 18 As shown, a second electrode layer 1061 is formed. The second electrode layer 1061 can cover the second semiconductor layer 1023, the first contact 104 and part of the passivation layer 108 of the LED unit 102, so that the second semiconductor layer 1023 of the plurality of LED units 102 are electrically connected to the plurality of first contacts 104 in a one-to-one correspondence.

[0148] like Figure 19 As shown, an isolation barrier 109 is formed. The isolation barrier 109 has a plurality of grid holes 110, which surround a plurality of LED units 102 in a one-to-one correspondence.

[0149] like Figure 20 As shown, a wavelength conversion layer 103 and a filling layer 114 are formed. The wavelength conversion layer 103 and the filling layer 114 are formed on the isolation gate 109. The wavelength conversion layer 103 fills a portion of the grid holes 110 and covers the corresponding LED unit 102. The filling layer 114 fills a portion of the grid holes 110 and covers the corresponding LED unit 102. The wavelength conversion layer 103 and the filling layer 114 fill different grid holes 110 respectively.

[0150] like Figure 21 As shown, a filter layer 115 is formed. The filter layer 115 is disposed on the filler layer 114. The filter layer 115 includes a first filter unit 1151 and a second filter unit 1152. The first filter unit 1151 and the second filter unit 1152 correspond to different LED units 102, respectively.

[0151] like Figures 1 to 22As shown, this disclosure also provides a display device 200. The display device 200 includes a miniature light-emitting diode display device 100 as described in any of the preceding embodiments.

[0152] In this embodiment, the display device 200 includes a miniature light-emitting diode display device 100, and therefore has all the beneficial effects of the miniature light-emitting diode display device 100 as in any previous embodiment, which will not be described again.

[0153] In this embodiment, the micro light-emitting diode display device 100 or display device 200 can be applied to augmented reality (AR) display devices, virtual reality (VR) display devices, near-eye display (NED) devices, head-up display (HUD) devices, etc.

[0154] The above are merely preferred embodiments of this application and are not intended to limit this application. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this application should be included within the protection scope of this application. The above are merely preferred embodiments of this application. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the technical principles of this application, and these improvements and modifications should also be considered within the protection scope of this application.

Claims

1. A miniature light-emitting diode display device, characterized in that, include: Drive backplane; Multiple LED units are arranged on the driver backplate, and the LED units emit mixed color light, which includes a first color light and a second color light; A wavelength conversion layer is disposed on a portion of the LED units and is used to convert the mixed light emitted by the corresponding LED units into a third color light, wherein the first color light, the second color light, and the third color light are all different; A filter layer includes a first filter unit and a second filter unit. The first filter unit is disposed on a portion of the LED units and is used to filter the second color light and allow the first color light to pass through. The second filter unit is disposed on a portion of the LED units and is used to filter the first color light and allow the second color light to pass through. At least three adjacent LED units constitute a full-color pixel, wherein one LED unit is provided with the wavelength conversion layer, one LED unit is provided with the first filter unit, and one LED unit is provided with the second filter unit.

2. The miniature light-emitting diode display device according to claim 1, characterized in that, The LED unit includes a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer; The active layer includes a first quantum well for enabling the LED unit to emit light of a first color and a second quantum well for enabling the LED unit to emit light of a second color, wherein the first quantum well is provided in one or more pairs and the second quantum well is provided in one or more pairs.

3. The miniature light-emitting diode display device according to claim 2, characterized in that, When multiple pairs of the first quantum well and the second quantum well are respectively provided, the multiple pairs of the first quantum well and the multiple pairs of the second quantum well are alternately stacked.

4. The miniature light-emitting diode display device according to claim 2, characterized in that, When multiple pairs of the first quantum well and the second quantum well are respectively provided, the multiple pairs of the first quantum well are stacked to form a first quantum well group, and the multiple pairs of the second quantum well are stacked to form a second quantum well group. The second quantum well group is stacked with the first quantum well group.

5. The miniature light-emitting diode display device according to claim 2, characterized in that, The thickness of the first semiconductor layer ranges from 50 nm to 500 nm; The thickness of the active layer ranges from 100 nm to 500 nm; The thickness of the second semiconductor layer ranges from 500 nm to 5 μm.

6. The miniature light-emitting diode display device according to claim 2, characterized in that, The material of the first quantum well includes indium gallium nitride, wherein the molar composition of indium in the indium gallium nitride is 5% to 20%; The material of the second quantum well includes indium gallium nitride, wherein the molar composition of indium in the indium gallium nitride is 10% to 30%.

7. The miniature light-emitting diode display device according to claim 2, characterized in that, The drive backplate includes: The driving circuit includes a plurality of first contacts and at least one second contact, wherein the plurality of first contacts are disposed below the plurality of LED units in a one-to-one correspondence; In this configuration, the first semiconductor layer of each of the plurality of LED units is electrically connected to each of the plurality of first contacts, and the second semiconductor layer of each of the plurality of LED units is electrically connected to the second contacts.

8. The miniature light-emitting diode display device according to claim 2, characterized in that, The drive backplate includes: The driving circuit includes a plurality of first contacts and at least one second contact, wherein the first contacts are located between adjacent LED units; The second semiconductor layer of the plurality of LED units is electrically connected to the plurality of first contacts in a one-to-one correspondence, and the first semiconductor layers of the plurality of LED units are electrically connected to the second contacts together.

9. The miniature light-emitting diode display device according to any one of claims 1 to 8, characterized in that, Also includes: An isolation grid is disposed on the drive back plate and has multiple grid holes corresponding one-to-one with the multiple LED units; The wavelength conversion layer fills a portion of the grid holes in the plurality of grid holes and covers or encloses the corresponding LED unit; The filter layer is disposed in a portion of the grid holes among the plurality of grid holes and is located above the corresponding LED unit.

10. The miniature light-emitting diode display device according to claim 9, characterized in that, Also includes: A filling layer is filled within the grid holes and located between the filter layer and the corresponding LED unit.

11. The miniature light-emitting diode display device according to any one of claims 1 to 8, characterized in that, Also includes: A blue-green light epitaxial structure is disposed on the driving backplate, and the blue-green light epitaxial structure is etched to form a plurality of LED units; The wavelength conversion layer is made of red quantum dots; Wherein, the first color light includes blue light, the second color light includes green light, and the wavelength conversion layer is used to convert the blue light and green light emitted by the corresponding LED unit into red light.

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