wet etching system

Abstract

This disclosure provides a wet etching system, comprising: a reaction chamber, a spray gun, a buffer tank, and a circulation pipeline. The spray gun is located inside the reaction chamber, while the buffer tank and the circulation pipeline are both located outside the reaction chamber. The circulation pipeline is connected to the spray gun. The recovery port of the reaction chamber is connected to a first buffer port of the buffer tank, and the second buffer port of the buffer tank is connected to the circulation pipeline. The recovery port is higher than the first buffer port, the first buffer port is lower than the highest point inside the buffer tank, and the second buffer port is higher than the circulation pipeline. Using this technical solution improves the atmosphere within the reaction chamber and increases product yield.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor manufacturing technology, and more particularly to a wet etching system. Background Technology

[0002] Wet etching is a key process in semiconductor manufacturing, widely used for the removal of materials such as silicon oxide and metal thin films. Wet etching systems typically use strong acids or strong alkalis as etching solutions. Due to the high cost of etching solutions, circulating pipelines are usually used to reuse the etching solution.

[0003] However, continuous circulation will cause the liquid medicine to continuously vaporize in the circulation pipeline, thus generating more gas. Excessive accumulation of strong acid and alkali gases will backflow into the reaction chamber through the connected pipeline, resulting in a deterioration of the atmosphere in the reaction chamber and affecting the product yield. Utility Model Content

[0004] In view of this, embodiments of the present disclosure provide a wet etching system that can improve the atmosphere in the reaction chamber and increase product yield.

[0005] To address the aforementioned technical problems, this disclosure provides a wet etching system, which includes:

[0006] The system includes a reaction chamber, a spray gun, a buffer tank, and a circulation pipeline. The spray gun is located inside the reaction chamber, while the buffer tank and the circulation pipeline are located outside the reaction chamber.

[0007] The circulation pipeline is connected to the spray gun, the recovery port of the reaction chamber is connected to the first buffer port of the buffer tank, and the second buffer port of the buffer tank is connected to the circulation pipeline.

[0008] The height of the recycling interface is higher than that of the first buffer interface, the height of the first buffer interface is lower than the highest point inside the buffer tank, and the height of the second buffer interface is higher than that of the circulation pipeline.

[0009] Optionally, the height of the first buffer interface is higher than that of the second buffer interface;

[0010] Alternatively, the height of the first buffer interface may be lower than that of the second buffer interface.

[0011] Optionally, the wet etching system further includes:

[0012] A recycling tube, the two ends of which are respectively connected to the recycling interface and the first buffer interface;

[0013] A control valve, installed on the recovery pipe, is capable of controlling the opening and closing of the recovery pipe.

[0014] Optionally, the wet etching system further includes:

[0015] The recovery tank is located inside the reaction chamber and is connected to the recovery interface. The opening size of the recovery tank is larger than the interface size of the recovery interface.

[0016] Optionally, the circulation pipeline includes:

[0017] A liquid storage tank having a first liquid storage port and a second liquid storage port;

[0018] A circulation pipe is located outside the liquid storage tank, and its two ends are respectively connected to the first liquid storage port and the second liquid storage port to form a ring passage with the liquid storage tank.

[0019] The first driving element is disposed on the circulation pipe and is capable of driving the etching solution to circulate within the annular passage.

[0020] Optionally, the two ends of the connecting pipe are respectively connected to the second buffer interface and the circulation interface on the circulation pipe;

[0021] Alternatively, the two ends of the connecting pipe can be connected to the second buffer interface and the circulation interface on the liquid storage tank, respectively.

[0022] Optionally, the wet etching system further includes:

[0023] An infusion tube, the two ends of which are connected to the circulation pipeline and the spray gun, respectively;

[0024] The second driving component is disposed on the infusion tube and can drive the etching solution to circulate within the annular passage.

[0025] Optionally, both ends of the infusion tube are connected to the infusion interface on the spray gun and the circulation tube, respectively;

[0026] Alternatively, the two ends of the connecting pipe can be connected to the infusion interface on the spray gun and the storage tank, respectively.

[0027] Optionally, the wet etching system further includes:

[0028] First negative pressure pipe;

[0029] Second negative pressure pipe;

[0030] An air extraction device is located outside the reaction chamber and is connected to the third buffer interface of the buffer tank through the first negative pressure pipe, and to the exhaust interface of the reaction chamber through the second negative pressure pipe.

[0031] The third buffer interface of the buffer tank is located at the highest point inside the buffer tank, where it communicates with the interior of the buffer tank.

[0032] Optionally, the wet etching system further includes:

[0033] A gas supply device, located on the reaction chamber, is capable of supplying gas into the reaction chamber;

[0034] The gas supply port of the gas supply device is positioned opposite to the exhaust port of the reaction chamber.

[0035] Compared with the prior art, the technical solution of the present disclosure has the following advantages:

[0036] In the technical solution of this embodiment, by setting the spray gun in the reaction chamber and connecting it to the circulation pipeline, the etching solution inside the circulation pipeline can be input into the reaction chamber through the spray gun. By setting the recovery interface of the reaction chamber to be connected to the first buffer interface of the buffer tank, and setting the height of the recovery interface to be higher than the height of the first buffer interface, the etching solution output by the spray gun when performing the pre-output operation in the reaction chamber can be transported to the buffer tank through the recovery interface and the first buffer interface under the action of gravity. By setting the second buffer interface of the buffer tank to be connected to the circulation pipeline, and setting the height of the second buffer interface to be higher than the circulation pipeline, the etching solution in the buffer tank can be transported to the circulation pipeline through the second buffer interface under the action of gravity. The vaporized etching solution in the circulation pipeline can enter the buffer tank through the second buffer interface and accumulate in the space area at the highest point in the buffer tank. By setting the height of the first buffer interface to be lower than the highest point in the buffer tank, the amount of vaporized etching solution accumulated in the space area at the highest point in the buffer tank can be reduced and the amount of vaporized etching solution entering the reaction chamber through the first buffer interface can be reduced. Therefore, the stability of the atmosphere in the reaction chamber during operation can be improved, thereby improving the product yield. Attached Figure Description

[0037] To more clearly illustrate the technical solutions of the embodiments of this specification, the drawings used in the description of the embodiments of this specification or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this specification. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0038] Figure 1 This is a schematic diagram showing the connection of various components of a wet etching system according to an embodiment of this disclosure;

[0039] Figure 2 This is a schematic diagram of the structure of a buffer tank according to an embodiment of this disclosure;

[0040] Figure 3 This is a schematic diagram of another type of buffer tank in an embodiment of this disclosure.

[0041] Explanation of reference numerals in the attached figures:

[0042] The system includes a reaction chamber 100, a spray gun 110, a buffer tank 120, a first buffer interface 121, a second buffer interface 122, a third buffer interface 123, a circulation pipeline 130, a storage tank 131, a circulation pipe 132, a first drive unit 133, a recovery pipe 140, a control valve 150, a recovery tank 160, a connecting pipe 170, an infusion pipe 180, a second drive unit 190, a vacuum device 200, a first negative pressure pipe 210, a second negative pressure pipe 220, and a positive pressure device 230. Detailed Implementation

[0043] As mentioned earlier, wet etching is a key process in semiconductor manufacturing, typically using strong acids or alkalis as etching solutions to remove materials such as silicon oxide and thin metal films. In some examples, a wet etching system includes a reaction chamber and a spray gun. The reaction chamber provides the process environment for wet etching, with the wafer located inside. The etching solution is sprayed onto the wafer via the spray gun to perform wet etching.

[0044] To verify whether the spray gun is clogged, whether the etching solution delivery is normal, and to confirm whether the temperature, concentration and other parameters of the etching solution meet the requirements, a pre-output operation needs to be performed on the spray gun before wet etching. The etching solution output during this operation does not participate in the wet etching.

[0045] To reduce the cost of the etching solution, in some examples, the wet etching system also includes a circulation pipeline connected to the spray gun. This allows the etching solution in the circulation pipeline to enter the spray gun through the connection between the circulation pipeline and the spray gun. The circulation pipeline is also connected to the reaction chamber, so the etching solution output during the pre-output operation of the spray gun can circulate back into the circulation pipeline through the connection between the circulation pipeline and the reaction chamber. In other words, by setting up a circulation pipeline, the etching solution can be reused.

[0046] However, the inventors of this disclosure discovered in actual work that continuous circulation would cause the liquid medicine in the circulation pipeline to continuously vaporize, thereby generating more gas. Excessive accumulation of strong acid and alkali gases would backflow into the reaction chamber through the connection between the circulation pipeline and the reaction chamber, thereby causing the atmosphere in the reaction chamber to deteriorate and affecting the product yield.

[0047] To address the aforementioned technical problems, this disclosure provides a wet etching system, including a reaction chamber, a spray gun, a buffer tank, and a circulation pipeline. The spray gun is located inside the reaction chamber, while the buffer tank and circulation pipeline are both located outside the reaction chamber. The circulation pipeline is connected to the spray gun, and the recovery port of the reaction chamber is connected to the first buffer port of the buffer tank, while the second buffer port of the buffer tank is connected to the circulation pipeline. The recovery port is higher than the first buffer port, the first buffer port is lower than the highest point inside the buffer tank, and the second buffer port is higher than the circulation pipeline.

[0048] By adopting the above technical solution, the spray gun is positioned within the reaction chamber, and the circulation pipeline is connected to the spray gun. The etching solution inside the circulation pipeline can be input into the reaction chamber through the spray gun. The recovery interface of the reaction chamber is connected to the first buffer interface of the buffer tank. The height of the recovery interface is higher than that of the first buffer interface. When the spray gun performs a pre-output operation in the reaction chamber, the etching solution output can be transported to the buffer tank through the recovery interface and the first buffer interface under the action of gravity. The second buffer interface of the buffer tank is connected to the circulation pipeline. The height of the second buffer interface is higher than that of the circulation pipeline. The etching solution in the buffer tank can be transported to the circulation pipeline through the second buffer interface under the action of gravity. The vaporized etching solution in the circulation pipeline can enter the buffer tank through the second buffer interface and accumulate in the space area at the highest point of the buffer tank. By setting the height of the first buffer interface lower than that of the highest point of the buffer tank, the amount of vaporized etching solution accumulated in the space area at the highest point of the buffer tank can be reduced, thus improving the stability of the atmosphere in the reaction chamber during operation and thereby improving product yield.

[0049] To make the above-mentioned objectives, features and beneficial effects of this disclosure more apparent and understandable, specific embodiments of this disclosure will be described in detail below with reference to the accompanying drawings.

[0050] Combined with reference Figure 1 and Figure 2 ,in, Figure 1 This is a schematic diagram showing the connections of the components of a wet etching system according to an embodiment of this disclosure. Figure 2 This is a schematic diagram of the structure of a buffer tank in an embodiment of this disclosure.

[0051] In this embodiment, the wet etching system may include: a reaction chamber 100, a spray gun 110, a buffer tank 120, and a circulation pipeline 130, wherein the spray gun 110 is located inside the reaction chamber 100, and the buffer tank 120 and the circulation pipeline 130 are both located outside the reaction chamber 100.

[0052] The circulation pipe 130 is connected to the spray gun 110, so that the etching solution inside the circulation pipe 130 can be input into the reaction chamber 100 through the spray gun 110.

[0053] The recovery port (not shown in the figure) of the reaction chamber 100 is connected to the first buffer port 121 of the buffer tank 120. The height of the recovery port is higher than the height of the first buffer port 121. In this way, the etching liquid output by the spray gun 110 when performing the pre-output operation in the reaction chamber 100 can be transported to the buffer tank 120 through the recovery port and the first buffer port 121 under the action of gravity.

[0054] The second buffer port 122 of the buffer tank 120 is connected to the circulation pipeline 130. The height of the second buffer port 122 is higher than that of the circulation pipeline 130. In this way, the etching solution in the buffer tank 120 can be transported to the circulation pipeline 130 through the second buffer port 122 under the action of gravity. The vaporized etching solution in the circulation pipeline 130 can enter the buffer tank 120 through the second buffer port 122 and accumulate in the space area at the highest point in the buffer tank 120.

[0055] The height of the first buffer interface 121 is lower than the highest point inside the buffer tank 120, which can reduce the amount of vaporized etching liquid that accumulates in the space area at the highest point inside the buffer tank 120 and enters the reaction chamber 100 through the first buffer interface 121.

[0056] In summary, the above technical solution can improve the stability of the atmosphere in the reaction chamber 100 during operation, thereby improving product yield.

[0057] It should be noted that, in the embodiments of this disclosure, the etching solution not limited by the qualifier "vaporized" refers to the etching solution in a liquid state.

[0058] The etching solution can be a buffered oxide etchant (BOE) or a strong acid solution such as nitric acid, or a strong alkaline solution such as potassium hydroxide or tetramethylammonium hydroxide.

[0059] In some embodiments, the recycling interface is located at the bottom of the reaction chamber 100.

[0060] In some embodiments, the height of the second buffer interface 122 is lower than the highest point inside the buffer tank 120.

[0061] It should be noted that the height of the first buffer interface 121 and the height of the second buffer interface 122 can be implemented in various ways.

[0062] In this embodiment, the height of the first buffer interface 121 may be higher than that of the second buffer interface 122.

[0063] As a specific example, refer to Figure 2 The first buffer interface 121 is located on the side wall of the buffer tank 120, and the second buffer interface 122 is located at the lowest point inside the buffer tank 120. This can reduce the amount of buffer solution contained in the buffer tank 120 and improve the recovery efficiency of the buffer solution.

[0064] In other embodiments, the height of the first buffer interface 121 may be lower than that of the second buffer interface 122.

[0065] As a specific example, refer to Figure 3 , Figure 3This is a schematic diagram of another buffer tank in an embodiment of this disclosure. The first buffer interface 121 is located at the lowest point inside the buffer tank 120, and the second buffer interface 122 is located on the side wall inside the buffer tank 120.

[0066] Firstly, the vaporized etching solution can enter the buffer tank 120 through the second buffer interface 122 and accumulate in the space region at the highest point inside the buffer tank 120. The height of the first buffer interface 121 is lower than that of the second buffer interface 122, which can reduce the amount of vaporized etching solution passing through the first buffer interface 121 during the accumulation of the space region at the highest point inside the buffer tank 120, thereby further reducing the amount of vaporized etching solution entering the reaction chamber 100 through the first interface.

[0067] Secondly, when the etching solution in the buffer tank 120 is discharged from the second buffer port 122, it is necessary to ensure that the liquid level of the etching solution is not lower than the second buffer port 122. The height of the first buffer port 121 is lower than the second buffer port 122. The height of the first buffer port 121 is lower than the liquid level of the etching solution. The first buffer port 121 is sealed by the etching solution. The passage between the vaporized etching solution and the first buffer port 121 is blocked by the etching solution. This means that adopting this setting can further reduce the amount of vaporized etching solution entering the reaction chamber 100 through the first port.

[0068] In other examples, the height of the first buffer interface 121 may also be the same as that of the second buffer interface 122.

[0069] In some embodiments, the wet etching system may further include a recovery tube 140.

[0070] The two ends of the recovery pipe 140 are connected to the recovery interface and the first buffer interface 121, respectively, to provide a path for the etching solution to be output from the reaction chamber 100 to the buffer tank 120.

[0071] In some embodiments, the wet etching system may further include a control valve 150.

[0072] The control valve 150 is located on the recovery pipe 140 and can control the opening and closing of the recovery pipe 140. For example, when the spray gun 110 performs the pre-output operation, the recovery pipe 140 is controlled to be in the open state, and after the spray gun 110 finishes the pre-output operation, the recovery pipe 140 is controlled to be in the closed state. This can prevent the vaporized etching liquid in the buffer tank 120 from entering the reaction chamber 100 through the recovery pipe 140 after the spray gun 110 finishes the pre-output operation, thereby further reducing the amount of vaporized etching liquid entering the reaction chamber 100.

[0073] The control valve 150 can be at least one of a diaphragm valve, ball valve, butterfly valve, needle valve, etc. In this embodiment, the control valve 150 can be a diaphragm valve to achieve the delivery of high-purity etching solution.

[0074] In some embodiments, the wet etching system may further include a recovery tank 160.

[0075] The recovery tank 160 is located inside the reaction chamber 100 and is connected to the recovery interface. The size of the opening of the recovery tank 160 is larger than the size of the interface of the recovery interface.

[0076] When the spray gun 110 performs the pre-output operation, the output port of the spray gun 110 faces the recovery tank 160. The recovery tank 160 recovers the etching liquid pre-output by the spray gun 110 and transfers it to the recovery interface. By setting the size of the opening of the recovery tank 160 to be larger than the size of the interface of the recovery interface, the difficulty of collecting the etching liquid can be reduced.

[0077] In some embodiments, the wet etching system may further include a connecting tube 170.

[0078] The two ends of the connecting pipe 170 are respectively connected to the second buffer interface 122 of the buffer tank 120 and the circulation pipe 130 to provide a passage for the etching solution to be output from the buffer tank 120 to the circulation pipe 130.

[0079] In some embodiments, the circulation line 130 may include a storage tank 131 and a circulation pipe 132.

[0080] The storage tank 131 is a device for storing etching solution in a wet etching system. It has a first storage port and a second storage port. The circulation pipe 132 is located outside the storage tank 131. The two ends of the circulation pipe 132 are connected to the first storage interface (not shown in the figure) and the second storage interface (not shown in the figure) of the storage tank 131, respectively, so as to form a ring-shaped passage for transporting etching solution with the storage tank 131.

[0081] In some embodiments, the circulation tube 132 has a circulation interface (not shown).

[0082] One end of the connecting pipe 170 is connected to the circulation interface to achieve the connection between the connecting pipe 170 and the circulation pipe 130.

[0083] In other examples, the circulation interface can also be set on the storage tank 131, in which case one end of the connecting pipe 170 is connected to the storage tank 131.

[0084] In some embodiments, the circulation line 130 may further include a first drive element 133.

[0085] The first driving component 133 is disposed on the circulation pipe 132, which can drive the etching solution to circulate in the annular passage, thereby improving the uniformity of the etching solution in the circulation pipe 130 and avoiding the impact of local concentration and temperature abnormalities of the etching solution on the etching quality.

[0086] The first driving component 133 can be at least one of a magnetic pump, peristaltic pump, centrifugal pump, or diaphragm pump. In this embodiment, the first driving component 133 can be a magnetic pump to achieve the circulating delivery of high-purity etching solution.

[0087] In some embodiments, the wet etching system may further include: an infusion tube 180.

[0088] The two ends of the infusion tube 180 are connected to the circulation tube 130 and the spray gun 110 respectively, so that the circulation tube 130 and the spray gun 110 are connected, and the etching solution inside the circulation tube 130 can be input into the reaction chamber 100 through the spray gun 110.

[0089] In some embodiments, the storage tank 131 also has an infusion port (not shown in the figure).

[0090] One end of the infusion tube 180 is connected to the infusion interface to enable the infusion tube 180 to connect with the storage tank 131 in the circulation pipeline 130.

[0091] In other examples, the infusion port can also be located on the circulation tube 132, in which case the infusion tube 180 is connected to the circulation tube 132 of the circulation line 130.

[0092] In some embodiments, the wet etching system may further include a second drive 190.

[0093] The second driving component 190 is disposed on the infusion tube 180 and can drive the etching solution to circulate within the annular passage, thereby improving the uniformity of the etching solution and avoiding the impact of local concentration and temperature abnormalities on the etching quality.

[0094] The second drive unit 190 can be at least one of a magnetic pump, peristaltic pump, centrifugal pump, or diaphragm pump. In this embodiment, the second drive unit 190 can be a magnetic pump to achieve the circulating delivery of high-purity etching solution.

[0095] In some embodiments, the wet etching system may further include: an air extraction device 200 and a first negative pressure tube 210.

[0096] The vacuum device 200 is located outside the reaction chamber and is connected to the third buffer interface 123 of the buffer tank 120 through the first negative pressure pipe 210. The vacuum device 200 can provide negative pressure to extract the vaporized etching liquid in the buffer tank 120, thereby reducing the amount of vaporized etching liquid accumulated in the buffer tank 120.

[0097] The extraction device 200 can be at least one of a centrifugal fan or a vacuum pump. In this embodiment, the extraction device 200 can be a vacuum pump.

[0098] In some embodiments, the third buffer interface 123 of the buffer tank 120 may be located at the top of the buffer tank 120, so that the communication position with the inside of the buffer tank 120 is located at the highest point inside the buffer tank 120, which can improve the efficiency of extracting the vaporized etching liquid inside the buffer tank 120.

[0099] In some embodiments, the wet etching system may further include a second negative pressure tube 220.

[0100] The two ends of the second negative pressure pipe 220 are connected to the exhaust port of the reaction chamber 100 and the air extraction device 200, respectively. The air extraction device 200 can provide negative pressure to extract the gas in the reaction chamber 100.

[0101] Furthermore, the wet etching system may also include: a positive pressure device 230.

[0102] The positive pressure device 230 is installed in the reaction chamber 100 and can deliver inert gas into the reaction chamber 100.

[0103] In practical use, the positive pressure device 230 delivers inert gas into the reaction chamber 100, and the extraction device 200 extracts the gas from the reaction chamber 100. This ensures that the gas composition in the chamber is controllable, thereby improving the stability of the atmosphere in the reaction chamber 100 during operation and thus improving the product yield.

[0104] It is understandable that the term "and / or" in this article is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, and B existing alone. Additionally, the character " / " in this article indicates that the preceding and following related objects have an "or" relationship.

[0105] It is understood that "multiple" in this document refers to two or more. The descriptions of "first," "second," "third," etc., appearing in the embodiments of this application are for illustrative purposes and to distinguish the objects being described, and have no order, nor do they indicate a special limitation on the number of devices in the embodiments of this application, and cannot constitute any limitation on the embodiments of this application.

[0106] It is understood that the above description provides multiple embodiment solutions, and the optional methods described in each embodiment solution can be combined and cross-referenced with each other without conflict, thereby extending to a variety of possible embodiment solutions, all of which can be considered as the embodiment solutions disclosed in this disclosure.

[0107] While the embodiments disclosed herein are as described above, this disclosure is not limited thereto. Any person skilled in the art can make various alterations and modifications without departing from the spirit and scope of this disclosure; therefore, the scope of protection of this disclosure should be determined by the scope defined in the claims.

Claims

1. A wet etching system, characterized by, include: The system includes a reaction chamber, a spray gun, a buffer tank, and a circulation pipeline. The spray gun is located inside the reaction chamber, while the buffer tank and the circulation pipeline are located outside the reaction chamber. The circulation pipeline is connected to the spray gun, the recovery port of the reaction chamber is connected to the first buffer port of the buffer tank, and the second buffer port of the buffer tank is connected to the circulation pipeline. The height of the recycling interface is higher than that of the first buffer interface, the height of the first buffer interface is lower than the highest point inside the buffer tank, and the height of the second buffer interface is higher than that of the circulation pipeline.

2. The wet etch system of claim 1, wherein, The height of the first buffer interface is higher than that of the second buffer interface; Alternatively, the height of the first buffer interface may be lower than that of the second buffer interface.

3. The wet etch system of claim 1, wherein, Also includes: A recycling tube, the two ends of which are respectively connected to the recycling interface and the first buffer interface; A control valve, installed on the recovery pipe, is capable of controlling the opening and closing of the recovery pipe.

4. The wet etch system of claim 1, wherein, Also includes: The recovery tank is located inside the reaction chamber and is connected to the recovery interface. The opening size of the recovery tank is larger than the interface size of the recovery interface.

5. The wet etch system of claim 1, wherein, The circulation pipeline includes: A liquid storage tank having a first liquid storage port and a second liquid storage port; A circulation pipe is located outside the liquid storage tank, and its two ends are respectively connected to the first liquid storage port and the second liquid storage port to form a ring passage with the liquid storage tank. The first driving element is disposed on the circulation pipe and is capable of driving the etching solution to circulate within the annular passage.

6. The wet etch system of claim 5, wherein, The two ends of the connecting tube are respectively connected to the second buffer interface and the circulation interface on the circulation tube; Alternatively, the two ends of the connecting pipe can be connected to the second buffer interface and the circulation interface on the liquid storage tank, respectively.

7. The wet etch system of claim 6, wherein, Also includes: An infusion tube, the two ends of which are connected to the circulation pipeline and the spray gun, respectively; The second driving component is disposed on the infusion tube and can drive the etching solution to circulate within the annular passage.

8. The wet etch system of claim 7, wherein, The two ends of the infusion tube are respectively connected to the infusion interface on the spray gun and the circulation tube; Alternatively, the two ends of the connecting pipe can be connected to the infusion interface on the spray gun and the storage tank, respectively.

9. The wet etch system of claim 1, wherein, Also includes: First negative pressure pipe; Second negative pressure pipe; An air extraction device is located outside the reaction chamber and is connected to the third buffer interface of the buffer tank through the first negative pressure pipe, and to the exhaust interface of the reaction chamber through the second negative pressure pipe. The third buffer interface of the buffer tank is located at the highest point inside the buffer tank, where it communicates with the interior of the buffer tank.

10. The wet etch system of claim 9, wherein, Also includes: A gas supply device, located on the reaction chamber, is capable of supplying gas into the reaction chamber; The gas supply port of the gas supply device is positioned opposite to the exhaust port of the reaction chamber.

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