Industrial gas monitoring system, ion source and ion implanter

Abstract

The utility model provides a kind of industrial gas monitoring system, ion source and ion implanter, the monitoring system includes series connection's first gas sensor and first indicating module, first indicating module is configured to be mounted to the outside of semiconductor equipment;First gas sensor is configured to be mounted in the process cavity, the impedance of first gas sensor can change along with the change of the content of industrial gas in process cavity;When there is industrial gas in process cavity, the impedance of first gas sensor reduces, so that first indicating module is turned on to be in first state;When the industrial gas in process cavity is swept clean, the impedance of first gas sensor restores, so that first indicating module is disconnected to be in second state.The utility model can monitor the cleaning condition of industrial gas in the process cavity of semiconductor equipment in time accurately, provide qualitative index for PM operation standardization, effectively guarantee the safety of equipment engineer.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor processing and manufacturing technology, and in particular to an industrial gas monitoring system, an ion source, and an ion implanter. Background Technology

[0002] Ion implanters are indispensable equipment in the modern semiconductor manufacturing field. The principle is to ionize electrically neutral atoms or molecules in the doping source (the doping source is the precursor that provides doping atoms) to obtain plasma. After extraction, screening, shaping, acceleration and deceleration, etc., an ion beam that meets the implantation conditions is obtained. Finally, it is incident into the substrate material (such as a wafer) at a certain angle to complete the doping.

[0003] The lifespan of an ion implanter's ion source is typically 20 to 30 days. After reaching this lifespan, preventative maintenance (PM) is required by the equipment engineer. Because the gases commonly used in ion implanters (arsine, phosphine, borane, etc.) pose irreversible health risks, studies show that ion implantation equipment engineers have a higher incidence of occupational diseases due to prolonged exposure to industrial gases.

[0004] Currently, industrial gas monitoring in wafer fabs (FABs) mainly relies on industrial safety gas detection systems (GDS). However, GDS primarily monitors gases in the factory environment and lacks accurate and real-time gas monitoring of the environment inside the enclosure, especially after the ion source is turned on.

[0005] It should be noted that the information disclosed in the background section of this utility model is intended only to enhance the understanding of the general background of this utility model, and should not be regarded as an admission or in any way implying that the information constitutes prior art known to those skilled in the art. Utility Model Content

[0006] The purpose of this invention is to provide an industrial gas monitoring system, an ion source, and an ion implanter, which can monitor the cleaning status of industrial gases in the process chamber of semiconductor equipment (e.g., an ion source) in real time and accurately, providing qualitative indicators for the standardization of preventive maintenance (PM) operations, thereby providing strong protection for the safe operation of equipment engineers and effectively ensuring their safety.

[0007] To achieve the above objectives, this utility model provides an industrial gas monitoring system for monitoring industrial gases within a semiconductor device. The semiconductor device has a process chamber inside. The industrial gas monitoring system includes a first gas sensor and a first indicating module connected in series. The first indicating module is configured to be installed externally on the semiconductor device. The first gas sensor is configured to be installed inside the process chamber. The impedance of the first gas sensor changes with the concentration of industrial gas within the process chamber. When industrial gas is present in the process chamber, the impedance of the first gas sensor decreases, causing the first indicating module to conduct and enter a first state. When the industrial gas in the process chamber is purged, the impedance of the first gas sensor recovers, causing the first indicating module to disconnect and enter a second state.

[0008] Optionally, the industrial gas monitoring system provided by this utility model further includes a purge controller. The first gas sensor and the first indicating module are connected in series with the purge controller. The purge controller is configured to communicate with the gas purging system. When there is industrial gas in the process chamber, the purge controller is turned on to control the gas purging system to input purge gas into the process chamber to purge the industrial gas in the process chamber. When the industrial gas in the process chamber is purged clean, the purge controller is turned off to stop the gas purging system from inputting purge gas into the process chamber.

[0009] Optionally, the industrial gas monitoring system provided by this utility model further includes a second gas sensor and a second indicating module connected in series. The second gas sensor is configured to be installed inside the semiconductor device and outside the process chamber, and the second indicating module is configured to be installed outside the semiconductor device. The impedance of the second gas sensor can change with the change in the content of industrial gas leaked in the process chamber. When industrial gas leaks in the process chamber, the impedance of the second gas sensor decreases, so that the second indicating module is turned on and is in a first state. When no industrial gas leaks in the process chamber, the impedance of the second gas sensor is the original impedance, so that the second indicating module is turned off and is in a second state.

[0010] Optionally, both the first gas sensor and the second gas sensor are metal oxide semiconductor gas sensors.

[0011] Optionally, the second gas sensor and the second indicating module are connected in parallel with the first gas sensor and the first indicating module.

[0012] Optionally, the industrial gas monitoring system provided by this utility model further includes a first resistor, which is connected in series with the first gas sensor and the first indicating module.

[0013] Optionally, the industrial gas monitoring system provided by this utility model further includes a second resistor, which is connected in parallel with the first gas sensor and the first indicating module.

[0014] Optionally, the industrial gas monitoring system provided by this utility model further includes a switch and a power supply connected in series, wherein the positive terminal of the power supply is connected to the first gas sensor and the negative terminal of the power supply is connected to the first indicating module.

[0015] To achieve the above objectives, this utility model provides an ion source, which includes a housing, a process chamber, and an industrial gas monitoring system as described in any of the above descriptions, wherein the process chamber is located within the housing.

[0016] To achieve the above objectives, this utility model also provides an ion implanter, which includes the ion source described in any of the above descriptions.

[0017] Compared with existing technologies, the industrial gas monitoring system, ion source, and ion implanter provided by this utility model have the following advantages:

[0018] The industrial gas monitoring system provided by this utility model includes a first gas sensor and a first indicator module connected in series. The first indicator module is configured to be installed outside the semiconductor equipment. The first gas sensor is configured to be installed inside the process chamber of the semiconductor equipment. The impedance of the first gas sensor can change with the change in the content of industrial gas in the process chamber. When there is industrial gas in the process chamber, the impedance of the first gas sensor decreases, so that the first indicator module is turned on and is in a first state. When the industrial gas in the process chamber is purged, the impedance of the first gas sensor recovers, so that the first indicator module is turned off and is in a second state. It can be seen that by using the industrial gas monitoring system provided by this utility model, the cleaning status of industrial gases (such as arsine, phosphine, and borane) in the process chamber of semiconductor equipment (such as an ion source) can be monitored in real time and accurately. This provides qualitative indicators for the standardization of preventive maintenance operations, thereby providing strong protection for the safe operation of equipment engineers and effectively ensuring their safety.

[0019] Furthermore, this invention provides a second gas sensor configured to be installed in the peripheral region (inside the semiconductor device) of the process chamber of a semiconductor device (e.g., an ion source), with its impedance changing in response to variations in the concentration of industrial gas. A second indicator module is also provided, configured to be installed outside the semiconductor device (e.g., an ion source) and connected in series with the second gas sensor. When an industrial gas leak occurs in the process chamber, the impedance of the second gas sensor decreases, causing the second indicator module to conduct and enter a first state. When no industrial gas leak occurs in the process chamber, the impedance of the second gas sensor is its original impedance, causing the second indicator module to disconnect and enter a second state. This allows equipment engineers to accurately determine whether a leak has occurred in the process chamber based on the state of the second indicator module. This prevents equipment engineers from directly opening the door of the semiconductor device (e.g., an ion source) in the event of a leak, thus effectively preventing them from coming into contact with harmful gases. Attached Figure Description

[0020] Figure 1 A schematic diagram of the circuit structure of an industrial gas monitoring system provided in one embodiment of this utility model;

[0021] Figure 2 A flowchart illustrating the operation of an industrial gas monitoring system according to one embodiment of this utility model;

[0022] Figure 3 This is a schematic diagram of the structure of an ion source provided in one embodiment of the present invention;

[0023] Figure 4 This is a schematic diagram of the process chamber of an ion source provided in one embodiment of the present invention.

[0024] The reference numerals in the attached figures are explained as follows:

[0025] First gas sensor - 110; First indicating module - 120; Purge controller - 130; Second gas sensor - 140; Second indicating module - 150; First resistor - R1; Second resistor - R2; Switch - 160; Power supply - 170;

[0026] Housing - 210; Process chamber - 220; Reflector - 221; Cathode assembly - 222; Filament - 2221; Cathode cap - 2222; Purge port - 223; Door - 230;

[0027] Gas purging system-300. Detailed Implementation

[0028] The industrial gas monitoring system, ion source, and ion implanter proposed in this utility model will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of this utility model will become clearer from the following description. Please refer to the accompanying drawings for a clearer understanding of the purpose, features, and advantages of this utility model. It should be noted that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only for illustrative purposes and to enable those skilled in the art to understand and read the content disclosed herein. They are not intended to limit the implementation conditions of this utility model. Any modifications to the structure, changes in proportions, or adjustments to the size, provided they produce the same or similar effects and achieve the same purpose as this utility model, should still fall within the scope of the technical content disclosed herein. Specific design features of this utility model disclosed herein, including, for example, specific dimensions, orientations, positions, and shapes, will be determined in part by the specific application and usage environment. Furthermore, in the embodiments described below, the same reference numerals are sometimes used across different drawings to denote the same parts or parts with the same function, omitting repeated descriptions. In this specification, similar reference numerals and letters are used to denote similar items, so once an item is defined in one figure, it does not need to be discussed further in subsequent figures.

[0029] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations, nor should they be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element. The singular forms “a,” “one,” and “the” include plural objects. The term “or” is generally used to mean “and / or.” The term “several” is generally used to mean “at least one.” The term “at least two” is generally used to mean “two or more.” The term “multiple” is generally used to mean “at least two.”

[0030] In the description of this utility model, it should be understood that the terms "center," "longitudinal," "transverse," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "axial," "radial," and "circumferential," etc., indicating orientation or positional relationships, are based on the orientation or positional relationships shown in the accompanying drawings and are only for the convenience of describing this utility model and simplifying the description. They do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model. In the description of this utility model, unless otherwise explicitly specified and limited, the terms "installation," "connection," "joining," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances. Furthermore, in this utility model, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Moreover, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0031] To facilitate understanding, a brief explanation of the research background of this utility model will be given first.

[0032] After the ion source of the ion implanter reaches the end of its service life, the equipment engineer needs to perform preventive maintenance. Before performing preventive maintenance, the equipment engineer needs to purge the process chamber of the ion source with a purging gas (such as argon) for a certain period of time before opening the door (cover) of the ion source. Since the purging time depends entirely on personal experience and lacks qualitative indicators, there is a risk of safety hazards caused by incomplete purging of industrial gases (such as arsine, phosphine, and borane).

[0033] Based on this, the core idea of ​​this utility model is to provide an industrial gas monitoring system, an ion source, and an ion implanter, which can monitor the cleaning status of industrial gases in the process chamber of semiconductor equipment (such as an ion source) in real time and accurately, providing qualitative indicators for the standardization of preventive maintenance operations, thereby providing strong protection for the safe operation of equipment engineers and effectively ensuring the safety of equipment engineers.

[0034] To achieve the above-mentioned goals, this utility model provides an industrial gas monitoring system for monitoring industrial gases within semiconductor equipment. The semiconductor equipment has a process chamber inside. (Please refer to...) Figure 1 This is a schematic diagram of the circuit structure of an industrial gas monitoring system provided in one embodiment of this utility model. Figure 1 As shown, the industrial gas monitoring system provided by this utility model includes a first gas sensor 110 and a first indicating module 120 connected in series. The first indicating module 120 is configured to be installed outside the semiconductor device; the first gas sensor 110 is configured to be installed in the process chamber 220 (see...). Figure 4 Within the process chamber 220, the impedance of the first gas sensor 110 can follow the impedance of the process chamber 220 (see...). Figure 3 The impedance of the first gas sensor 110 changes with the content of industrial gas in the process chamber 220. When industrial gas is present in the process chamber 220, the impedance of the first gas sensor 110 decreases, so that the first indicator module 120 is turned on and is in a first state. When the industrial gas in the process chamber 220 is purged, the impedance of the first gas sensor 110 recovers, so that the first indicator module 120 is turned off and is in a second state.

[0035] Therefore, by adopting the industrial gas monitoring system provided by this utility model, the cleaning status of industrial gases (such as arsine, phosphine, borane and other hazardous gases) in the process chamber 220 of semiconductor equipment (such as ion source) can be monitored in real time and accurately. This provides qualitative indicators for the standardization of preventive maintenance operations, thereby providing strong protection for the safe operation of equipment engineers and effectively ensuring their safety.

[0036] It should be noted that, as those skilled in the art will understand, the industrial gas monitoring system provided by this utility model can not only realize the real-time monitoring of industrial gases (such as arsine, phosphine, borane and other hazardous gases) in the process chamber 220 of the ion source, so as to provide an opening indicator for the preventive maintenance of the ion source, but also realize the real-time monitoring of industrial gases in the process chamber 220 of other semiconductor equipment (such as rapid annealing equipment, etching equipment, etc.) other than the ion source, so as to provide an opening indicator for the preventive maintenance of the semiconductor equipment.

[0037] In some exemplary embodiments, the first gas sensor 110 is a metal oxide semiconductor gas sensor. Therefore, by employing a metal oxide semiconductor gas sensor as the first gas sensor 110 in the industrial gas monitoring system provided by this invention, the strong reducing properties of harmful gases (industrial gases) with redox properties such as arsine, phosphine, and borane can be utilized to significantly alter the impedance of the first gas sensor 110, thereby more accurately monitoring the cleanup status of industrial gases inside the process chamber 220 (e.g., the process chamber 220 of an ion source). Furthermore, since metal oxide semiconductor gas sensors have stronger tolerance to poisonous substances such as sulfides and silanes and can withstand high temperatures, employing a metal oxide semiconductor gas sensor as the first gas sensor 110 in the industrial gas monitoring system provided by this invention can further extend the service life of the industrial gas monitoring system provided by this invention.

[0038] It should be noted that, as those skilled in the art will understand, selective monitoring of some redox-resistant industrial gases can be achieved by replacing the sensitive electrode (sensitive membrane) of the metal oxide semiconductor gas sensor.

[0039] Please continue to refer to this. Figure 1 ,like Figure 1 As shown, in some exemplary embodiments, the first indicator module 120 is a signal light. When industrial gas is present in the process chamber 220, the first indicator module 120 is in an illuminated state; when the industrial gas in the process chamber 220 is purged, the first indicator module 120 is in an off state. Therefore, by using a signal light as the first indicator module 120 in the industrial gas monitoring system provided by this invention, equipment engineers can directly and intuitively determine the cleaning status of the industrial gas in the process chamber 220 based on whether the signal light is illuminated. This effectively avoids equipment engineers opening the door 230 of the semiconductor equipment (e.g., arsenic, phosphine, borane, etc.) when industrial gas (e.g., harmful gases) still remains in the process chamber 220 of the semiconductor equipment (e.g., ion source). Figure 3 Preventive maintenance can be carried out, which can provide more intuitive qualitative indicators for preventive maintenance and effectively avoid equipment engineers from being exposed to harmful gases.

[0040] It should be noted that, as those skilled in the art will understand, in some other embodiments, the first indicator module 120 may also be other elements that can serve an indicator function besides a signal light. For example, the first indicator module 120 may also be a buzzer. When there are harmful gases (industrial gases) with oxidation-reduction properties such as arsine, phosphine, and borane in the process chamber 220, the first indicator module 120 is turned on and emits a buzzer sound; when the harmful gases (industrial gases) with oxidation-reduction properties such as arsine, phosphine, and borane in the process chamber 220 are purged, the first indicator module 120 is turned off and enters a silent state (no longer emits a buzzer sound).

[0041] Please continue to refer to this. Figure 1 ,like Figure 1 As shown, in some exemplary embodiments, the industrial gas monitoring system provided by this utility model further includes a purge controller 130, wherein the first gas sensor 110 and the first indicating module 120 are connected in series with the purge controller 130, and the purge controller 130 is configured to be connected to the gas purging system 300 (see...). Figure 4 Communication connection; when industrial gas is present in the process chamber 220, the purge controller 130 is activated to control the gas purging system 300 to input purging gas into the process chamber 220 to purge the industrial gas in the process chamber 220; when the industrial gas in the process chamber 220 is purged clean, the purge controller 130 is deactivated to stop the gas purging system 300 from inputting purging gas into the process chamber 220. Thus, by connecting the purge controller 130, the first gas sensor 110, and the first indicating module 120 in series, when industrial gases (hazardous gases) such as arsine, phosphine, and borane are present in the process chamber 220, the activated purge controller 130 can automatically control the gas purging system 300 (see...) Figure 4 A purge gas is introduced into the process chamber 220 to purge the industrial gases within the process chamber 220. When the industrial gases (hazardous gases) such as arsine, phosphine, and borane in the process chamber 220 are purged clean, the gas blowing mechanism can be automatically controlled by the disconnected purge controller 130 to stop continuing to introduce purge gas into the process chamber 220, thereby ending the purging of the industrial gases in the process chamber 220.

[0042] It should be noted that the specific structure and working principle of the gas purging system 300 can be adapted for understanding by referring to relevant content known to those skilled in the art, and will not be elaborated here. It should also be noted that, as those skilled in the art can understand, this utility model does not limit the type of purging gas provided by the gas purging system 300; the purging gas provided by the gas purging system 300 can be, but is not limited to, inert gases such as argon.

[0043] Please continue to refer to this. Figure 2 This is a flowchart illustrating the workflow of an industrial gas monitoring system provided in one embodiment of this utility model. Figure 2 As shown, during the preventive maintenance preparation phase (PM preparation), the equipment engineer activates the industrial gas monitoring system provided by this invention (power supply 170, i.e., the switch 160 described below is closed). When the first gas sensor 110 comes into contact with industrial gases with redox properties such as arsine, phosphine, and borane, its impedance drops significantly, causing the purge controller 130 and the first indicator module 120 to conduct, so that the gas purging system 300 automatically starts purging the industrial gas in the process chamber 220. When the industrial gases with redox properties such as arsine, phosphine, and borane are purged clean, the impedance of the first gas sensor 110 recovers, the purge controller 130 and the first indicator module 120 disconnect, the first indicator module 120 is in a second state (e.g., the light-off state), and the gas purging system 300 automatically shuts down. At this time, the equipment engineer can open the door 230 of the semiconductor device (e.g., the ion source) to perform PM work, thereby effectively preventing the equipment engineer from coming into contact with harmful gases.

[0044] Please continue to refer to this. Figure 1 ,like Figure 1 As shown, in some exemplary embodiments, the industrial gas monitoring system provided by this utility model further includes a first resistor R1, which is connected in series with the first gas sensor 110 and the first indicating module 120. Therefore, by setting the first resistor R1 connected in series with the first gas sensor 110 and the first indicating module 120, a certain voltage division effect can be achieved. This effectively avoids the problem of a sudden large current burning out the first gas sensor 110, the first indicating module 120, and the aforementioned purge controller 130 when the first gas sensor 110 comes into contact with harmful gases with oxidizing and reducing properties such as arsine, phosphine, and borane, causing a sharp drop in its impedance. This effectively improves the safety of the industrial gas monitoring system provided by this utility model during use and effectively extends its service life.

[0045] Please continue to refer to this. Figure 1 ,like Figure 1 As shown, in some exemplary embodiments, the industrial gas monitoring system provided by this invention further includes a second resistor R2, which is connected in parallel with the first gas sensor 110 and the first indicator module 120. When harmful gases with redox properties, such as arsine, phosphine, and borane, are purged from the process chamber 220 of the semiconductor device (e.g., an ion source), the impedance of the first gas sensor 110 recovers to an extremely high value, approaching an open circuit state. This causes the input terminal of the purging controller 130 to be in a high-impedance floating state, making it susceptible to electromagnetic interference and potentially leading to false triggering of the gas purging system 300. Therefore, by setting a second resistor R2 connected in parallel with the first gas sensor 110 and the first indicator module 120, the safety of the industrial gas monitoring system provided by this invention during use can be further improved.

[0046] Please continue to refer to this. Figure 1 ,like Figure 1 As shown, in some exemplary embodiments, the industrial gas monitoring system provided by this utility model further includes a power supply 170, the positive terminal of which is connected to the first gas sensor 110, and the negative terminal of which is connected to the first indicating module 120. Thus, the power supply 170 can provide electrical energy to the first gas sensor 110, the first indicating module 120, the purge controller 130, and the second gas sensor 140 and the second indicating module 150 described below.

[0047] Please continue to refer to this. Figure 1 ,like Figure 1 As shown, in some exemplary embodiments, the industrial gas monitoring system provided by this utility model further includes a switch 160 connected in series with the power supply 170. Thus, the switch 160 can control the connection and disconnection of the power supply 170, making operation more convenient.

[0048] Please continue to refer to this. Figure 1 ,like Figure 1As shown, in some exemplary embodiments, the industrial gas monitoring system provided by this utility model further includes a second gas sensor 140 and a second indicating module 150 connected in series. The second gas sensor 140 is configured to be installed inside the semiconductor device and located outside the process chamber 220. The impedance of the second gas sensor 140 can change with the change in the content of industrial gas leaked from the process chamber 220. When industrial gas leakage occurs in the process chamber 220, the impedance of the second gas sensor 140 decreases, so that the second indicating module 150 is turned on and is in a first state. When no industrial gas leakage occurs in the process chamber 220, the impedance of the second gas sensor 140 is the original impedance, so that the second indicating module 150 is turned off and is in a second state. Therefore, by installing a second gas sensor 140 whose impedance changes with the content of industrial gas in the peripheral area of ​​the process chamber 220 of the semiconductor device (e.g., the ion source), and installing a second indicator module 150 connected in series with the second gas sensor 140 on the outside of the semiconductor device (e.g., the ion source), the equipment engineer can accurately determine whether the process chamber 220 is leaking based on the state of the second indicator module 150. This avoids the equipment engineer from directly opening the door 230 of the semiconductor device (e.g., the ion source) in the event of a leak in the process chamber 220, and further effectively prevents the equipment engineer from being exposed to harmful gases.

[0049] In some exemplary embodiments, the second gas sensor 140 is a metal oxide semiconductor gas sensor. Therefore, by employing a metal oxide semiconductor gas sensor as the second gas sensor 140 in the industrial gas monitoring system provided by this invention, the strong reducing properties of harmful gases (industrial gases) with redox properties such as arsine, phosphine, and borane can be utilized to significantly alter the impedance of the second gas sensor 140, thereby more accurately monitoring the leakage of harmful gases such as arsine, phosphine, and borane within the process chamber 220 (e.g., the process chamber 220 of the ion source). Furthermore, since metal oxide semiconductor gas sensors have stronger tolerance to poisonous substances such as sulfides and silanes and can withstand high temperatures, employing a metal oxide semiconductor gas sensor as the second gas sensor 140 in the industrial gas monitoring system provided by this invention can further extend the service life of the industrial gas monitoring system provided by this invention.

[0050] Please continue to refer to this. Figure 1 ,like Figure 1As shown, in some exemplary embodiments, the second indicator module 150 is a signal light. When a leak of harmful gases (industrial gases) with redox properties, such as arsine, phosphine, or borane, occurs in the process chamber 220 of the semiconductor device (e.g., an ion source), the second indicator module 150 is in an illuminated state. When no leak of harmful gases (industrial gases) with redox properties, such as arsine, phosphine, or borane, occurs in the process chamber 220 of the semiconductor device (e.g., an ion source), the second indicator module 150 is in an off state. Therefore, by using a signal light as the second indicator module 150 in the industrial gas monitoring system provided by this utility model, equipment engineers can directly and intuitively determine the leakage of harmful gases (industrial gases) with oxidation-reduction properties such as arsine, phosphine, and borane in the process chamber 220 based on whether the signal light is on. This further effectively prevents equipment engineers from directly opening the door 230 of the semiconductor equipment (e.g., ion source) to perform preventive maintenance when industrial gases (e.g., harmful gases such as arsine, phosphine, and borane) are still present in the semiconductor equipment. This provides a more intuitive qualitative indicator for preventive maintenance and effectively prevents equipment engineers from coming into contact with harmful gases.

[0051] Furthermore, for ease of differentiation, the second indicator module 150 may be selected to emit an indicator light that emits a different color than the first indicator module 120, that is, the color of the light emitted when the second indicator module 150 is turned on is different from the color of the light emitted when the first indicator module 120 is turned on.

[0052] It should be noted that, as those skilled in the art will understand, in some other embodiments, the second indicator module 150 may also be other elements that can serve an indication function besides a signal light. For example, the second indicator module 150 may also be a buzzer. When a leak of harmful gases (industrial gases) with redox properties such as arsine, phosphine, or borane occurs in the process chamber 220 of the semiconductor device (e.g., ion source), the second indicator module 150 is turned on to emit a buzzer sound; when no leak of harmful gases (industrial gases) with redox properties such as arsine, phosphine, or borane occurs in the process chamber 220 of the semiconductor device (e.g., ion source), the second indicator module 150 is turned off to be in a silent state (no longer emits a buzzer sound).

[0053] Please continue to refer to this. Figure 1 ,like Figure 1As shown, in some exemplary embodiments, the second gas sensor 140 and the second indicating module 150 are connected in parallel with the first gas sensor 110 and the first indicating module 120. Therefore, by configuring the second gas sensor 140 and the second indicating module 150 to be connected in parallel with the first gas sensor 110 and the first indicating module 120, the second gas sensor 140 and the second indicating module 150 can share the same power supply 170 with the first gas sensor 110 and the first indicating module 120. This effectively simplifies the overall structure of the industrial gas monitoring system provided by this invention and helps to reduce the cost of the industrial gas monitoring system provided by this invention.

[0054] To achieve the above-mentioned goals, this invention also provides an ion source, please refer to further details. Figure 3 and Figure 4 ,in, Figure 3 This is a schematic diagram of the structure of an ion source provided in one embodiment of the present invention;

[0055] Figure 4 This is a schematic diagram of the process chamber 220 of the ion source provided in one embodiment of the present invention. Figure 3 and Figure 4 As shown, the ion source includes a housing 210, a process chamber 220, and the industrial gas monitoring system described above, with the process chamber 220 located within the housing 210. Since the ion source provided by this invention includes the industrial gas monitoring system provided by this invention, it at least includes all the beneficial effects of the industrial gas monitoring system provided by this invention. For details, please refer to the relevant descriptions above; therefore, the beneficial effects of the ion source provided by this invention will not be elaborated upon here.

[0056] Please continue to refer to this. Figure 3 ,like Figure 3 As shown, the first gas sensor 110 is installed inside the process chamber 220, the second gas sensor 140 is installed inside the housing 210 and located outside the process chamber 220, and the first indicator module 120 and the second indicator module 150 are both installed outside the housing 210.

[0057] Please continue to refer to this. Figure 4 ,like Figure 4As shown, a reflector 221 is provided inside the process chamber 220, and the first gas sensor 110 is positioned close to the reflector 221. Since the reflector 221 is positioned away from the cathode assembly 222 (including the filament 2221 and the cathode cap 2222), by positioning the first gas sensor 110 close to the reflector 221, the heat generated during the heating process of the filament 2221 can be avoided from affecting the measurement accuracy of the first gas sensor 110.

[0058] Please continue to refer to this. Figure 4 ,like Figure 4 As shown, the process chamber 220 has a purge port 223, and the purge system is connected to the purge port 223.

[0059] It should be noted that, as those skilled in the art will understand, further details regarding the ion source provided by this utility model can be adapted by referring to relevant content known to those skilled in the art, and will not be elaborated upon here.

[0060] To achieve the above-mentioned goals, this invention also provides an ion implanter, which includes the ion source described above. Since the ion implanter provided by this invention includes the ion source provided by this invention, it also possesses at least all the beneficial effects of the industrial gas monitoring system provided by this invention. For details, please refer to the relevant descriptions above; therefore, the beneficial effects of the ion implanter provided by this invention will not be elaborated upon here.

[0061] It should be noted that, as those skilled in the art will understand, further details regarding the ion implanter provided by this utility model can be adapted by referring to relevant content known to those skilled in the art, and will not be elaborated upon here.

[0062] In summary, compared with the prior art, the industrial gas monitoring system, ion source, and ion implanter provided by this utility model have the following beneficial effects:

[0063] This invention utilizes a first gas sensor 110 configured to be installed within the process chamber 220 of a semiconductor device, with impedance varying according to changes in the concentration of industrial gas within the process chamber 220. A first indicator module 120 is also configured to be installed externally to the semiconductor device (e.g., an ion source) and connected in series with the first gas sensor 110. When industrial gas is present in the process chamber 220, the impedance of the first gas sensor 110 decreases, causing the first indicator module 120 to conduct and enter a first state. When the industrial gas in the process chamber 220 is purged, the impedance of the first gas sensor 110 recovers, causing the first indicator module 120 to disconnect and enter a second state. This allows equipment engineers to accurately determine the status of the removal of industrial gas (e.g., arsine, phosphine, borane) from the process chamber 220 based on the state of the first indicator module 120. This provides qualitative indicators for the standardization of preventative maintenance operations, thereby providing strong assurance for the safe operation of equipment engineers and effectively guaranteeing their safety.

[0064] Furthermore, by providing a second gas sensor 140 configured to be installed in the peripheral area of ​​the process chamber 220 of a semiconductor device (e.g., an ion source) (located inside the semiconductor device) and whose impedance can change with the change in the content of industrial gas, and by providing a second indicator module 150 configured to be installed outside the semiconductor device (e.g., an ion source) and connected in series with the second gas sensor 140, the present invention enables the equipment engineer to accurately determine whether the process chamber 220 is leaking based on the state of the second indicator module 150. This avoids the equipment engineer from directly opening the door 230 of the semiconductor device (e.g., an ion source) in the event of a leak in the process chamber 220, thereby further effectively preventing the equipment engineer from being exposed to harmful gases.

[0065] It should be noted that in the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this utility model. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in a suitable manner in any one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0066] The above description is merely a description of a preferred embodiment of the present utility model and is not intended to limit the scope of the present utility model in any way. Any changes or modifications made by those skilled in the art based on the above disclosure shall fall within the protection scope of the present utility model. Obviously, those skilled in the art can make various modifications and variations to the utility model without departing from the spirit and scope of the present utility model. Therefore, if these modifications and variations fall within the scope of the present utility model and its equivalents, the present utility model also intends to include these modifications and variations.

Claims

1. An industrial gas monitoring system for monitoring industrial gases within a semiconductor device, wherein the semiconductor device has a process chamber inside, characterized in that... The industrial gas monitoring system includes a first gas sensor and a first indicator module connected in series, wherein the first indicator module is configured to be installed externally on the semiconductor device. The first gas sensor is configured to be installed inside the process chamber, and the impedance of the first gas sensor can change with the change in the content of industrial gas inside the process chamber. When industrial gas is present in the process chamber, the impedance of the first gas sensor decreases, causing the first indicating module to conduct and thus be in the first state. When the industrial gas in the process chamber is purged, the impedance of the first gas sensor recovers, causing the first indicating module to disconnect and enter the second state.

2. The industrial gas monitoring system according to claim 1, characterized in that, It also includes a purge controller, wherein the first gas sensor and the first indicator module are connected in series with the purge controller, and the purge controller is configured to communicate with the gas purging system. When industrial gas is present in the process chamber, the purging controller is activated to control the gas purging system to input purging gas into the process chamber to purge the industrial gas in the process chamber. When the industrial gas in the process chamber is purged clean, the purging controller is disconnected, so that the gas purging system stops inputting purging gas into the process chamber.

3. The industrial gas monitoring system according to claim 1, characterized in that, It also includes a second gas sensor and a second indicator module connected in series, the second gas sensor being configured to be installed inside the semiconductor device and outside the process cavity, and the second indicator module being configured to be installed outside the semiconductor device; The impedance of the second gas sensor can change with the change in the content of industrial gas leaking from the process chamber; When an industrial gas leak occurs in the process chamber, the impedance of the second gas sensor decreases, causing the second indicating module to conduct and thus be in the first state. When no industrial gas leakage occurs in the process chamber, the impedance of the second gas sensor is the original impedance, so that the second indicating module is disconnected and thus in the second state.

4. The industrial gas monitoring system according to claim 3, characterized in that, Both the first gas sensor and the second gas sensor are metal oxide semiconductor gas sensors.

5. The industrial gas monitoring system according to claim 3, characterized in that, The second gas sensor and the second indicating module are connected in parallel with the first gas sensor and the first indicating module.

6. The industrial gas monitoring system according to claim 1, characterized in that, It also includes a first resistor, which is connected in series with the first gas sensor and the first indicating module.

7. The industrial gas monitoring system according to claim 1, characterized in that, It also includes a second resistor, which is connected in parallel with the first gas sensor and the first indicating module.

8. The industrial gas monitoring system according to claim 1, characterized in that, It also includes a switch and a power supply connected in series, with the positive terminal of the power supply connected to the first gas sensor and the negative terminal of the power supply connected to the first indicating module.

9. An ion source, characterized in that, The system includes a housing, a process chamber, and an industrial gas monitoring system according to any one of claims 1 to 8, wherein the process chamber is located within the housing.

10. An ion implanter, characterized in that, Includes the ion source as described in claim 9.

Images