Pipe heat preservation purging device and semiconductor equipment
Patent Information
- Application Number
- CN202522768260.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-26
- Publication Date
- 2026-11-03
- Estimated Expiration
- 2035-12-26
AI Technical Summary
In semiconductor furnace tube equipment, byproducts of semiconductor processes condense in the exhaust pipes, causing particulate contamination, which in turn leads to wafer contamination and equipment failure. Existing cleaning methods are labor-intensive and increase the risk of leakage.
A pipeline insulation and purging device is adopted. The purging airflow is heated to the target temperature by a heater, and the purging airflow at the target temperature is sprayed into the exhaust pipe through the outlet nozzle to achieve the cleaning and insulation of solid particles in the pipeline and avoid the condensation of by-products.
It effectively avoids solid particle contamination in pipelines, improves semiconductor process efficiency and equipment stability, and reduces cleaning frequency and leakage risk.
Smart Images
Figure CN224926676U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor technology, and in particular to a pipeline insulation and purging device and semiconductor equipment. Background Technology
[0002] In current semiconductor furnace equipment, byproducts of semiconductor processes (such as chemical vapor deposition) are prone to condensation in the exhaust pipe, resulting in particulate contamination. If particulate contamination flows back into the reaction chamber of the semiconductor furnace equipment, it will lead to a series of problems such as wafer contamination, equipment downtime, and reduced product yield.
[0003] In related technologies, the common method to improve particulate contamination within the pipeline is to periodically disassemble and clean the exhaust pipes. This method is not only labor-intensive and reduces semiconductor process efficiency, but the chemical cleaning agents used in cleaning the pipes can also easily corrode them, increasing the risk of pipe leaks and thus reducing the process yield and operational stability of the semiconductor furnace equipment. Utility Model Content
[0004] Based on this, embodiments of this application provide a pipeline insulation purging device and a semiconductor device to achieve pipeline insulation while cleaning solid particles inside the pipeline.
[0005] To achieve the above objectives, some embodiments of this application provide a pipeline insulation and purging device. This pipeline insulation and purging device includes: a gas storage tank, a first pipeline, a heater, a second pipeline, and an outlet nozzle; the gas storage tank provides a purging airflow; the first pipeline is configured such that its inlet is connected to the gas storage tank and it is used to deliver the purging airflow; the heater is located on the first pipeline and is used to heat the purging airflow in the first pipeline to a target temperature; the second pipeline is configured such that its inlet is connected to the first pipeline and it is used to deliver the purging airflow at the target temperature; the outlet nozzle is configured such that its inlet is connected to the outlet of the second pipeline, and its outlet is connected to the exhaust gas discharge pipeline of the process chamber; it is used to spray the purging airflow at the target temperature onto the exhaust gas discharge pipeline to purify the exhaust gas discharge pipeline.
[0006] In some embodiments, the target temperature is greater than the condensation temperature of the byproducts discharged through the exhaust pipe when the process chamber performs the target process.
[0007] In some embodiments, the process chamber is used to perform a target process and to discharge exhaust gas through the exhaust gas discharge pipeline after the target process is completed; the pipeline insulation and purging device further includes a flow control valve; the flow control valve is located on the first pipeline and is configured to: adjust the purging airflow to a first flow rate during the pipeline purging process after the exhaust gas discharge process in the process chamber is completed; and adjust the purging airflow to a second flow rate during the execution of the target process in the process chamber; wherein the second flow rate is less than the first flow rate.
[0008] In some embodiments, the pipeline insulation purging device further includes a pulse solenoid valve; the pulse solenoid valve connects the first pipeline and the second pipeline and is configured to: rapidly open and close during the pipeline purging process to convert the purging airflow at the target temperature into a pulsed purging airflow at the target temperature and deliver it to the second pipeline; and remain open during the execution of the target process in the process chamber to maintain a stable purging airflow at the target temperature flowing in the second pipeline;
[0009] In some examples, the exhaust nozzle is further configured to: spray the pulsed purge airflow at the target temperature onto the exhaust gas pipeline during the pipeline purging process to purge the exhaust gas pipeline; and, during the execution of the target process in the process chamber, spray the stable purge airflow at the target temperature onto the exhaust gas pipeline to maintain both the temperature of the exhaust nozzle and the temperature of the exhaust gas pipeline at the target temperature.
[0010] In some embodiments, the pipeline insulation purging device further includes a check valve; the check valve is located at the connection between the exhaust gas emission pipeline and the process chamber, and is configured to: close during the pipeline purging process to block the communication between the process chamber and the exhaust gas emission pipeline; and remain open during the execution of the target process in the process chamber to allow the exhaust gas emission pipeline to communicate with the process chamber.
[0011] In some embodiments, the exhaust nozzle is inserted obliquely into the exhaust pipe, and the angle between the airflow direction in the exhaust nozzle and the airflow direction in the exhaust pipe is an acute angle; wherein, the connection between the exhaust nozzle and the exhaust pipe is sealed by a nozzle base.
[0012] In some embodiments, there are at least four exhaust nozzles; the at least four exhaust nozzles are evenly distributed across the cross-section of the exhaust pipe.
[0013] In some embodiments, the pipeline insulation and purging device further includes a heat insulation layer; the heat insulation layer is located at least on the wall of the first pipeline and the wall of the second pipeline between the heater and the second pipeline.
[0014] In some embodiments, the pipeline insulation and purging device further includes a pressure sensor; the pressure sensor is located on the first pipeline at the front end of the pulse solenoid valve and is used to monitor the gas pressure in the first pipeline at the front end of the pulse solenoid valve.
[0015] On the other hand, according to some embodiments, this application also provides a semiconductor device; the semiconductor device is provided with a pipeline insulation and purging device as described in any one of the preceding aspects of this application.
[0016] The embodiments of this application may have, or at least have, the following advantages:
[0017] In this embodiment, the purge gas flow from the gas storage tank to the first pipeline is heated to a target temperature by a heater. The target-temperature purge gas flow is then delivered to the outlet nozzle via a second pipeline and sprayed into the exhaust gas discharge pipeline of the process chamber. By directly connecting the outlet nozzle to the exhaust gas discharge pipeline and spraying the target-temperature purge gas, solid particles generated by condensation can be cleaned from inside the exhaust gas discharge pipeline without disassembling the pipeline. Furthermore, heating the exhaust gas discharge pipeline with the target-temperature purge gas maintains its temperature at the target level, preventing byproducts discharged from the process chamber from condensing within the pipeline and effectively avoiding solid particle contamination. Through the combined effect of these technical features, this application can simultaneously clean solid particles from the pipeline and maintain its temperature.
[0018] Details of one or more embodiments of this application are set forth in the following drawings and description. Other features, objects, and advantages of this application will become apparent from the specification, drawings, and claims. Attached Figure Description
[0019] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0020] Figure 1 This is a schematic diagram of the structure of a pipeline insulation and purging device provided in some embodiments;
[0021] Figure 2 This is a schematic diagram illustrating the connection relationship between a pipeline insulation and purging device and a process chamber, provided in some embodiments.
[0022] Figure 3This is a schematic diagram illustrating the connection relationship between an exhaust nozzle and an exhaust pipe in some embodiments.
[0023] Explanation of reference numerals in the attached figures:
[0024] C - Process chamber, P - Tail gas emission pipeline, A - Pipeline insulation and purging device, 1 - Gas storage tank, 2 - First pipeline, 3 - Heater, 4 - Second pipeline, 5 - Gas outlet nozzle, 6 - Flow control valve, 7 - Pulse solenoid valve, 8 - Check valve, 9 - Nozzle base, 10 - Insulation layer, 11 - Pressure sensor. Detailed Implementation
[0025] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings, which illustrate preferred embodiments of the application. However, this application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of this application will be thorough and complete.
[0026] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
[0027] It should be understood that when an element or layer is referred to as being "on," "adjacent to," or "connected to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, regions, layers, doping types, and / or portions, these elements, components, regions, layers, doping types, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, doping type, or portion from another element, component, region, layer, doping type, or portion. Therefore, without departing from the teachings of this application, the first element, component, region, layer, doping type, or portion discussed below may be referred to as a second element, component, region, layer, or portion.
[0028] When used herein, the singular forms of “a,” “an,” and “the” may also include the plural forms unless the context clearly indicates otherwise. It should also be understood that when the terms “comprise” and / or “comprising” are used in this specification, the presence of the stated feature, integer, step, operation, element, and / or part is established, but the presence or addition of one or more other features, integers, steps, operations, elements, parts, and / or groups is not excluded. Meanwhile, when used herein, the term “and / or” includes any and all combinations of the associated listed items.
[0029] Embodiments of the utility model are described herein with reference to cross-sectional views illustrating preferred embodiments (and intermediate structures) of this application, thus allowing for the expectation of variations in the shown shapes due to, for example, manufacturing techniques and / or tolerances. Embodiments of this application should not be limited to the specific shapes of the regions shown herein, but rather include shape deviations due to, for example, manufacturing techniques. Therefore, the regions shown in the figures are substantially schematic, and their shapes do not represent the actual shapes of regions of the device, nor do they limit the scope of this application.
[0030] This application provides a pipeline insulation purging device and a semiconductor device to achieve pipeline insulation while cleaning solid particles inside the pipeline.
[0031] In some embodiments, please refer to Figure 1 The pipeline insulation and purging device A includes: a gas storage tank 1, a first pipeline 2, a heater 3, a second pipeline 4, and an exhaust nozzle 5; the gas storage tank 1 provides the purging airflow; the first pipeline 2 is configured such that its inlet is connected to the gas storage tank 1, and it is used to deliver the purging airflow; the heater 3 is located on the first pipeline 2, and it is used to heat the purging airflow in the first pipeline 2 to a target temperature; the second pipeline 4 is configured such that its inlet is connected to the first pipeline 2, and it is used to deliver the purging airflow at the target temperature. Please refer to [link to relevant documentation]. Figure 1 and Figure 2 The exhaust nozzle 5 is configured such that its inlet is connected to the outlet of the second pipeline 4, and its outlet is connected to the exhaust gas discharge pipeline P of the process chamber C; it is used to spray the purging airflow at the target temperature onto the exhaust gas discharge pipeline P to purge the exhaust gas discharge pipeline P.
[0032] For example, the gas storage tank 1 includes, but is not limited to, the high-pressure gas storage tank 1.
[0033] For example, the purging airflow is a high-pressure airflow.
[0034] For example, the pressure range of the purge airflow includes 10MPa to 100MPa; the pressure of the purge airflow can be, for example, 10MPa, 20MPa, 30MPa, 40MPa, 50MPa, 60MPa, 70MPa, 80MPa, 90MPa or 100MPa, etc.
[0035] For example, the purge gas flow can be nitrogen (N2) or an inert gas, etc.
[0036] For example, the power range of heater 3 includes 3kW to 5kW; the power of heater 3 can be, for example, 3kW, 3.5kW, 4kW, 4.5kW or 5kW.
[0037] For example, the heating time required for heater 3 to heat the purge airflow from a cold state to the target temperature is less than 30s; the heating time required for heater 3 to heat the purge airflow from a cold state to the target temperature can be 5s, 10s, 15s, 20s or 25s, etc.
[0038] For example, heater 3 can be disposed on the inner or outer wall of the first pipe 2.
[0039] For example, the exhaust nozzle 5 includes, but is not limited to, a Venturi fan nozzle.
[0040] For example, the material of the exhaust nozzle 5 may include corrosion-resistant materials, such as Hastelloy.
[0041] For example, when the purge airflow is sprayed out of the outlet of the outlet nozzle 5, a fan-shaped spray area with a coverage angle of the target angle is formed on a plane perpendicular to the outlet direction.
[0042] For example, the target angle can range from 60° to 120°; the target angle can be 60°, 70°, 80°, 90°, 100°, 110° or 120°, etc.
[0043] In one example, the target angle is 90°.
[0044] For example, the diameters of the first pipe 2, the second pipe 4, and the exhaust nozzle 5 are all smaller than the diameter of the exhaust pipe P.
[0045] For example, the diameter of the exhaust pipe P can range from 180mm to 300mm; the diameter of the exhaust pipe P can be, for example, 180mm, 200mm, 220mm, 250mm, 280mm, or 300mm.
[0046] In this embodiment, the purge gas flow from the gas storage tank 1 to the first pipeline 2 is heated to a target temperature by the heater 3. The purge gas flow at the target temperature is then delivered to the outlet nozzle 5 via the second pipeline 4, and sprayed onto the exhaust gas discharge pipeline P of the process chamber C through the outlet nozzle 5. Thus, by directly connecting the outlet of the outlet nozzle 5 to the exhaust gas discharge pipeline P and spraying the purge gas flow at the target temperature, solid particles generated by condensation can be cleaned from inside the exhaust gas discharge pipeline P without disassembling the pipeline. Furthermore, by heating the exhaust gas discharge pipeline P with the purge gas at the target temperature, the temperature of the exhaust gas discharge pipeline P can be maintained at the target temperature, preventing byproducts discharged from the process chamber C from condensing inside the exhaust gas discharge pipeline P, thereby effectively avoiding solid particle contamination within the pipeline. With the combined effect of these technical features, this application can achieve pipeline insulation while simultaneously cleaning solid particles within the pipeline.
[0047] In some embodiments, the target temperature is greater than the condensation temperature of the byproducts emitted by the process chamber C through the exhaust gas emission pipe P when the target process is performed.
[0048] For example, the process chamber C can be the reaction chamber of a semiconductor furnace tube apparatus.
[0049] For example, the target process includes, but is not limited to, chemical vapor deposition (CVD) processes; the target process may be, for example, low-pressure chemical vapor deposition (LPCVD).
[0050] It should be noted that no chemical reaction occurs between the purge gas stream and the reactants and products of the target process.
[0051] For example, the byproducts of the target process include, but are not limited to, hydrogen chloride (HCl) gas.
[0052] For example, the target temperature is greater than 85°C.
[0053] For example, the target temperature range includes 90°C to 400°C. The target temperature can be, for example, 90°C, 100°C, 150°C, 200°C, 250°C, 300°C, 350°C, or 400°C.
[0054] In one example, the target temperature is 300°C.
[0055] In this embodiment, the target temperature is greater than the condensation temperature of the byproducts emitted by the exhaust gas emission pipe P; the exhaust gas emission pipe P is heated by the purging airflow to maintain the temperature of the exhaust gas emission pipe P above the condensation temperature of the byproducts, thereby preventing the byproducts discharged from the process chamber C from condensing in the exhaust gas emission pipe P and effectively avoiding the problem of solid particulate pollution in the pipe.
[0056] In some embodiments, the process chamber C is used to perform a target process, and exhaust gas is discharged through the exhaust gas emission pipe P after the target process is completed. Please continue reading. Figure 1 The pipeline insulation and purging device A further includes a flow control valve 6; the flow control valve 6 is located on the first pipeline 2 and is configured to: adjust the purging airflow to a first flow rate during the pipeline purging process after the exhaust gas emission process of the process chamber C is completed; and adjust the purging airflow to a second flow rate during the execution of the target process in the process chamber C; wherein the second flow rate is less than the first flow rate.
[0057] For example, the flow control valve 6 includes, but is not limited to, a mass flow controller (MFC).
[0058] For example, please continue reading Figure 1 The flow control valve 6 is located on the first pipeline 2 between the gas storage tank 1 and the heater 3.
[0059] In some embodiments, the pipeline insulation purging device A further includes a pulse solenoid valve 7; the pulse solenoid valve 7 connects the first pipeline 2 and the second pipeline 4, and is configured to: rapidly open and close during the pipeline purging process to convert the purging airflow at the target temperature into a pulsed purging airflow at the target temperature and deliver it to the second pipeline 4; and remain open during the execution of the target process in the process chamber C to maintain a stable purging airflow at the target temperature flowing in the second pipeline 4.
[0060] For example, the pulse solenoid valve 7 is located between the first pipeline 2 and the second pipeline 4; wherein the air inlet of the pulse solenoid valve 7 is connected to the air outlet of the first pipeline 2, and the air outlet of the pulse solenoid valve 7 is connected to the air inlet of the second pipeline 4.
[0061] For example, the pulse solenoid valve 7 includes, but is not limited to, a piston-type high-temperature resistant solenoid valve.
[0062] For example, the pulse solenoid valve 7 can withstand temperatures greater than 400°C.
[0063] For example, the opening / closing time of the pulse solenoid valve 7 is less than or equal to 10 ms.
[0064] In some examples, the exhaust nozzle 5 is further configured to: spray the pulsed purge airflow at the target temperature onto the exhaust gas discharge pipe P during the pipe purging process to purge the exhaust gas discharge pipe P; and, during the execution of the target process in the process chamber C, spray the stable purge airflow at the target temperature onto the exhaust gas discharge pipe P to maintain both the temperature of the exhaust nozzle 5 and the temperature of the exhaust gas discharge pipe P at the target temperature.
[0065] In this embodiment, during the pipeline purging process after the exhaust gas emission process in process chamber C, the flow control valve 6 adjusts the purging airflow to a relatively large first flow rate. The pulse control valve is then rapidly opened and closed to convert the purging airflow into a pulsed purging airflow, causing the pulsed purging airflow to impact the inner wall of the exhaust gas emission pipeline P, thereby thoroughly purging the solid particles generated by condensation. Furthermore, during the execution of the target process in process chamber C, the flow control valve 6 adjusts the purging airflow to a relatively small second flow rate, and the pulse control valve remains open to maintain a stable purging airflow. This provides insulation for the exhaust gas emission pipeline P during the target process, preventing the byproducts discharged during the target process from condensing within the exhaust gas emission pipeline P.
[0066] In some embodiments, please refer to Figure 1 The pipeline insulation and purging device A also includes a check valve 8; the check valve 8 is located at the connection between the exhaust gas emission pipeline P and the process chamber C, and is configured to: close during the pipeline purging process to block the communication between the process chamber C and the exhaust gas emission pipeline P; and remain open during the execution of the target process in the process chamber C to allow the exhaust gas emission pipeline P to communicate with the process chamber C.
[0067] It should be noted that the check valve 8 remains open during the execution of the target process in the process chamber C, so that the byproducts generated during the target process reaction are discharged through the exhaust gas discharge pipe P.
[0068] In some embodiments, please refer to Figure 1 The exhaust nozzle 5 is obliquely inserted into the exhaust pipe P, and the angle between the airflow direction in the exhaust nozzle 5 and the airflow direction in the exhaust pipe P is an acute angle; wherein, the connection between the exhaust nozzle 5 and the exhaust pipe P is sealed by the nozzle base 9.
[0069] For example, the nozzle base 9 includes a flange and a gasket.
[0070] For example, flanges include, but are not limited to, KF flanges (ISO-KF) or CF flanges (Conflat Flang).
[0071] For example, gaskets include, but are not limited to, copper gaskets or gold-plated gaskets.
[0072] For example, the angle between the airflow direction in the exhaust nozzle 5 and the airflow direction in the exhaust pipe P can range from 30° to 45°; the angle between the airflow direction in the exhaust nozzle 5 and the airflow direction in the exhaust pipe P can be, for example, 30°, 35°, 40° or 45°.
[0073] In this embodiment, the angle between the airflow direction in the outlet nozzle 5 and the airflow direction in the exhaust gas discharge pipe P is an acute angle; this not only ensures that the impact direction of the purging airflow is towards the downstream of the exhaust gas discharge pipe P, effectively preventing the purging airflow from flowing back into the process chamber C, but also allows the purging airflow to directly impact the sidewall of the exhaust gas discharge pipe P, so as to physically remove the solid particles attached to the sidewall of the pipe.
[0074] In some embodiments, please refer to Figure 3 The exhaust nozzle 5 is at least four; the at least four exhaust nozzles 5 are evenly distributed on the cross-section of the exhaust pipe P.
[0075] For example, the number of air outlet nozzles 5 can be 4, 8, 12 or 16, etc.
[0076] For example, at least four exhaust nozzles 5 may be distributed on the same cross-section of the exhaust pipe P and be centrally symmetrical about the center of the cross-section.
[0077] For example, the number of exhaust nozzles 5 can be more than four; wherein, the multiple exhaust nozzles 5 are distributed in groups of at least four on multiple cross sections of the exhaust pipe P, and at least four exhaust nozzles 5 in each cross section are centrally symmetrical about the center of the corresponding cross section.
[0078] For example, the number of air outlet nozzles 5 can be 4, 8, 12, 16, 20 or 24, etc.
[0079] For example, each exhaust nozzle 5 is sealed to the side wall of the exhaust pipe P through its corresponding nozzle base 9.
[0080] In this embodiment of the application, by uniformly arranging multiple exhaust nozzles 5, the purging airflow sprayed by the multiple exhaust nozzles 5 can uniformly impact the sidewall of the exhaust gas emission pipe P, so as to fully remove the solid particles attached to the sidewall of the pipe; and it can also achieve uniform heating and heat preservation of the exhaust gas emission pipe P, so as to avoid the occurrence of local cold spots in the pipe and prevent the condensation of by-products.
[0081] In some embodiments, please refer to Figure 1 The pipeline insulation and purging device A also includes a heat insulation layer 10; the heat insulation layer 10 is located at least on the wall of the first pipeline 2 and the wall of the second pipeline 4 between the heater 3 and the second pipeline 4.
[0082] For example, the insulation layer 10 includes, but is not limited to, the glass fiber insulation layer 10.
[0083] For example, the insulation layer 10 may be located on the inner wall and / or outer wall of the first pipe 2 and the second pipe 4.
[0084] In some embodiments, please refer to Figure 1 The pipeline insulation and purging device A also includes a pressure sensor 11; the pressure sensor 11 is located on the first pipeline 2 at the front end of the pulse solenoid valve 7, and is used to monitor the gas pressure in the first pipeline 2 at the front end of the pulse solenoid valve 7.
[0085] For example, pressure sensor 11 is located on the first conduit 2 between heater 3 and pulse solenoid valve 7.
[0086] This application also provides a semiconductor device according to some embodiments; the semiconductor device includes a pipeline insulation and purging device A as described in the foregoing embodiments of this application. The semiconductor device also possesses all the technical advantages of the aforementioned pipeline insulation and purging device A. It should be noted that the parts that are the same as or corresponding to the above embodiments can be referred to the corresponding descriptions of the foregoing embodiments, and will not be elaborated upon below.
[0087] For example, semiconductor equipment includes, but is not limited to, semiconductor furnace tube equipment.
[0088] For example, please refer to Figure 2 The semiconductor equipment includes a process chamber C and an exhaust gas pipeline P; the pipeline insulation and purging device A is connected to the exhaust gas pipeline P and is used to spray a purging airflow at the target temperature onto the exhaust gas pipeline P to purge the exhaust gas pipeline P.
[0089] For example, during the pipeline purging process after the exhaust gas emission process in process chamber C is completed, the pipeline insulation purging device A is used to spray a pulsed purging airflow at the target temperature onto the exhaust gas emission pipeline P to purge the exhaust gas emission pipeline P. During the target process in process chamber C, the pipeline insulation purging device A is used to spray a stable purging airflow at the target temperature onto the exhaust gas emission pipeline P to maintain the temperature of both the outlet nozzle 5 and the exhaust gas emission pipeline P at the target temperature.
[0090] For example, the gas flow rate of the pulsed purge gas flow is the first flow rate, and the gas flow rate of the stable purge gas flow is the second flow rate; wherein, the second flow rate is less than the first flow rate.
[0091] For example, the target process includes, but is not limited to, chemical vapor deposition (CVD) processes; the target process may be, for example, low-pressure chemical vapor deposition (LPCVD).
[0092] In the description of this specification, references to terms such as "some embodiments," "some examples," "exemplarily," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative descriptions of the above terms do not necessarily refer to the same embodiments or examples.
[0093] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0094] The embodiments described above are merely examples of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the utility model patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application.
Claims
1. A pipeline insulation and purging device, characterized in that, include: Gas storage tanks are used to provide purge airflow; The first pipeline is configured such that: the air inlet is connected to the air storage tank; and it is used to deliver the purging airflow. A heater, located on the first pipeline, is used to heat the purge gas flow in the first pipeline to a target temperature; The second conduit is configured such that its inlet is connected to the first conduit, and it is used to deliver the purge airflow at the target temperature. The exhaust nozzle is configured such that its inlet is connected to the outlet of the second pipeline, and its outlet is connected to the exhaust gas discharge pipeline of the process chamber; it is used to spray the purge airflow at the target temperature onto the exhaust gas discharge pipeline to purge the exhaust gas discharge pipeline.
2. The pipeline insulation and purging device according to claim 1, characterized in that, The target temperature is greater than the condensation temperature of the byproducts emitted through the exhaust pipe when the process chamber performs the target process.
3. The pipeline insulation and purging device according to claim 1, characterized in that, The process chamber is used to execute the target process, and exhaust gas is discharged through the exhaust gas emission pipe after the target process is completed. The pipeline insulation and purging device also includes: A flow control valve, located on the first pipeline, is configured to: adjust the purge airflow to a first flow rate during pipeline purging after the exhaust gas emission process of the process chamber has ended; and adjust the purge airflow to a second flow rate during the execution of the target process in the process chamber. Wherein, the second flow rate is less than the first flow rate.
4. The pipeline insulation and purging device according to claim 3, characterized in that, Also includes: A pulse solenoid valve, connecting the first pipeline and the second pipeline, is configured to: rapidly open and close during the purging process of the pipeline to convert the purging airflow at the target temperature into a pulsed purging airflow at the target temperature and deliver it to the second pipeline; and remain normally open during the execution of the target process in the process chamber to maintain a stable purging airflow at the target temperature flowing in the second pipeline. The exhaust nozzle is further configured to spray the pulsed purging airflow at the target temperature into the exhaust gas pipeline during the pipeline purging process, so as to purify the exhaust gas pipeline. Furthermore, during the execution of the target process in the process chamber, a stable purge airflow at the target temperature is sprayed into the exhaust gas pipeline to maintain the temperature of both the outlet nozzle and the exhaust gas pipeline at the target temperature.
5. The pipeline insulation and purging device according to claim 3, characterized in that, Also includes: A check valve, located at the connection between the exhaust gas discharge line and the process chamber, is configured to: close during the purging of the line to block the communication between the process chamber and the exhaust gas discharge line; and remain open during the execution of the target process in the process chamber to allow communication between the exhaust gas discharge line and the process chamber.
6. The pipeline insulation and purging device according to claim 1, characterized in that, The exhaust nozzle is inserted obliquely into the exhaust pipe, and the angle between the airflow direction in the exhaust nozzle and the airflow direction in the exhaust pipe is an acute angle. The connection between the exhaust nozzle and the exhaust pipe is sealed by a nozzle base.
7. The pipeline insulation and purging device according to claim 6, characterized in that, The exhaust nozzles are at least four; the at least four exhaust nozzles are evenly distributed across the cross-section of the exhaust pipe.
8. The pipeline insulation and purging device according to claim 1, characterized in that, Also includes: A heat insulation layer is located at least on the wall of the first pipe and the wall of the second pipe between the heater and the second pipe.
9. The pipeline insulation and purging device according to claim 4, characterized in that, Also includes: A pressure sensor is located on the first pipeline at the front end of the pulse solenoid valve and is used to monitor the gas pressure in the first pipeline at the front end of the pulse solenoid valve.
10. A semiconductor device, characterized in that, The semiconductor device is provided with a pipeline insulation and purging device as described in any one of claims 1 to 9.