A high power density bidirectional CLLC circuit board
Patent Information
- Application Number
- CN202522766673.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-26
- Publication Date
- 2026-11-03
- Estimated Expiration
- 2035-12-26
AI Technical Summary
Existing bidirectional CLLC circuit boards require increased board size for high power output, resulting in limited power density.
By improving device layout, a high-power-density bidirectional CLLC circuit board is constructed, including a CLLC converter, output module and control board with specific composition and layout. SiC switching transistors are used, combined with busbar design, and the circuit board layout is optimized to achieve high power output.
Achieving high power output on a limited circuit board area increases power density, while reducing hardware costs through interleaved control and heat dissipation optimization improves circuit board integration and reliability.
Smart Images
Figure CN224935589U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of printed circuit boards, and more specifically, to a high power density bidirectional CLLC circuit board. Background Technology
[0002] Bidirectional CLLC converters possess advantages such as bidirectional energy transfer, soft-switching characteristics, and a wide voltage range, making them widely used in bidirectional power conversion scenarios across multiple power levels. Currently, bidirectional CLLC converters are widely used in low-to-medium power applications, including consumer electronics adapters, small photovoltaic inverters, and home energy storage systems. However, for high-power outputs such as 30kW, the need for larger packaged power semiconductor devices and bulky magnetic components necessitates a larger circuit board size if the current bidirectional CLLC circuit board layout is adopted, thus limiting power density. Utility Model Content
[0003] The technical problem to be solved by this utility model is to provide a high power density bidirectional CLLC circuit board that addresses the above-mentioned deficiencies of the prior art. By improving the device layout, it can achieve high power output on a limited circuit board area, that is, improve the power density.
[0004] The technical solution adopted by this utility model to solve its technical problem is: to construct a high power density bidirectional CLLC circuit board, including a board body, a first CLLC converter, a second CLLC converter and an output module mounted on a first surface of the board body; The first CLLC converter includes a first input capacitor module, a first primary-side switching transistor module, a first secondary-side switching transistor module, and a first resonant converter module; The second CLLC converter includes a second input capacitor module, a second primary-side switching transistor module, a second secondary-side switching transistor module, and a second resonant converter module; The first input capacitor module, the first primary-side switching transistor module, the second input capacitor module, and the second primary-side switching transistor module are arranged sequentially along the first side of the plate. The output module, the first secondary side switch module, and the second secondary side switch module are arranged along the second side of the plate. The first resonant conversion module and the second resonant conversion module are disposed in the middle of the plate. The first side of the plate is parallel to the second side of the plate.
[0005] In the high power density bidirectional CLLC circuit board of this invention, the output module includes an output capacitor unit and an output filter unit; The output capacitor unit, the first secondary-side switching transistor module, the second secondary-side switching transistor module, and the output filter unit are arranged sequentially along the second side of the board.
[0006] In the high power density bidirectional CLLC circuit board of this invention, the first resonant conversion module and the second resonant conversion module are spaced apart from each other.
[0007] In the high power density bidirectional CLLC circuit board of this utility model, the first resonant conversion module includes a first resonant unit, a first isolation transformer, and a first relay unit; The first side of the first resonant converter module is adjacent to the first primary-side switching transistor module and the second input capacitor module, and the second side of the first resonant converter module is adjacent to the output capacitor unit and the first secondary-side switching transistor module; The first side of the first resonant transformation module and the second side of the first resonant transformation module are parallel to each other; A gap is left between the first resonant unit and the first isolation transformer.
[0008] In the high power density bidirectional CLLC circuit board of this utility model, the second resonant conversion module includes a second resonant unit, a second isolation transformer, and a second relay unit; The first side of the second resonant converter module is adjacent to the second primary-side switching transistor module, and the second side of the second resonant converter module is adjacent to the second secondary-side switching transistor module and the output filter unit; The first side of the second resonant transformation module and the second side of the second resonant transformation module are parallel to each other; A gap is left between the second resonant unit and the second isolation transformer.
[0009] The high power density bidirectional CLLC circuit board of this utility model further includes a first auxiliary power source module and a second auxiliary power source module. The first auxiliary source module is disposed along the third side of the plate and is adjacent to the second primary-side switching transistor module and the second resonant converter module; The second auxiliary power module is disposed along the fourth side of the plate and is located between the first input capacitor module and the output capacitor unit; The third side of the plate is parallel to the fourth side of the plate and perpendicular to the first and second sides of the plate.
[0010] The high power density bidirectional CLLC circuit board of this invention further includes a control board; The control board is disposed along the third side of the board body and is located between the first auxiliary source module and the output filter unit; The control board is detachably connected to the board body.
[0011] The high power density bidirectional CLLC circuit board of this utility model further includes a busbar; the busbar is laid on the second surface of the board body and faces the area of the first primary-side switching transistor module, the first secondary-side switching transistor module, the first resonant converter module, the second primary-side switching transistor module, the second secondary-side switching transistor module, and the second resonant converter module.
[0012] In the high power density bidirectional CLLC circuit board of this utility model, the first primary-side switch module, the first secondary-side switch module, the second primary-side switch module, and the second secondary-side switch module each include a plurality of SiC switch transistors.
[0013] In this invention, by sequentially arranging the first input capacitor module, the first primary-side switching transistor module, the second input capacitor module, and the second primary-side switching transistor module along the first side of the board; and arranging the output module, the first secondary-side switching transistor module, and the second secondary-side switching transistor module along the second side of the board; and arranging the first resonant converter module and the second resonant converter module in the middle of the board, two CLLC converters can be laid out on the circuit board, thereby achieving high power output and obtaining high power density within a limited circuit board area. Attached Figure Description
[0014] The present invention will be further described below with reference to the accompanying drawings and embodiments. In the accompanying drawings: Figure 1 This is a schematic diagram of the first surface of a preferred embodiment of the high power density bidirectional CLLC circuit board of this utility model; Figure 2 This is a schematic diagram of the second surface of a preferred embodiment of the high power density bidirectional CLLC circuit board of this utility model. Detailed Implementation
[0015] To make the objectives, technical solutions, and advantages of this utility model clearer, the present utility model will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present utility model and are not intended to limit the present utility model.
[0016] Figure 1 This is a schematic diagram of the first surface of a preferred embodiment of the high power density bidirectional CLLC circuit board of this utility model. Figure 2This is a schematic diagram of the second surface of a preferred embodiment of the high power density bidirectional CLLC circuit board of this utility model. (See diagram below.) Figures 1-2 As shown, the high power density bidirectional CLLC circuit board of this invention includes a board body 10, a first CLLC converter, a second CLLC converter, and an output module mounted on a first surface 11 of the board body 10; the first CLLC converter includes a first input capacitor module 2-1, a first primary-side switch module 1-1, a first secondary-side switch module 1-5, and a first resonant converter module 1-3; the second CLLC converter includes a second input capacitor module 2-2, a second primary-side switch module 1-2, a second secondary-side switch module 1-6, and a second resonant converter module 1-3. -4; The first input capacitor module 2-1, the first primary-side switch module 1-1, the second input capacitor module, and the second primary-side switch module are arranged sequentially along the first side 12 of the plate 10; The output module, the first secondary-side switch module 1-5, and the second secondary-side switch module 1-6 are arranged along the second side 13 of the plate 10; The first resonant conversion module 1-3 and the second resonant conversion module 1-4 are located in the middle of the plate 10; The first side 12 of the plate 10 is parallel to the second side 13 of the plate 10.
[0017] In this invention, by sequentially arranging the first input capacitor module, the first primary-side switching transistor module, the second input capacitor module, and the second primary-side switching transistor module along the first side of the board; and arranging the output module, the first secondary-side switching transistor module, and the second secondary-side switching transistor module along the second side of the board; and arranging the first resonant converter module and the second resonant converter module in the middle of the board, two CLLC converters can be laid out on the circuit board, thereby achieving high power output and obtaining high power density within a limited circuit board area.
[0018] like Figures 1-2As shown, the output module includes an output capacitor unit 3-1 and an output filter unit 3-2, which helps to filter out high-frequency interference signals and improve the output quality of the waveform. The output capacitor unit 3-1, the first secondary-side switching transistor module 1-5, the second secondary-side switching transistor module 1-6, and the output filter unit 3-2 are arranged sequentially along the second side 13 of the board 10. The first resonant conversion module 1-3 includes a first resonant unit 1-31, a first isolation transformer 1-32, and a first relay unit; the first side 12 of the first resonant conversion module 1-3 is adjacent to the first primary-side switching transistor module 1-1 and the second input capacitor module 2-2, and the second side 13 of the first resonant conversion module 1-3 is adjacent to the output capacitor unit 3-1 and the first secondary-side switching transistor module; the first side 12 and the second side 13 of the first resonant conversion module 1-3 are parallel to each other. The second resonant converter module 1-4 includes a second resonant unit 1-41, a second isolation transformer 1-42, and a second relay unit. The first side 12 of the second resonant converter module 1-4 is adjacent to the second primary-side switching transistor module 1-2, and the second side 13 of the second resonant converter module 1-4 is adjacent to the second secondary-side switching transistor module and the output filter unit 3-2. The first side 12 and the second side 13 of the second resonant converter module 1-4 are parallel to each other. There is a gap between the first resonant converter module 1-3 and the second resonant converter module 1-4. There is also a gap between the first resonant unit 1-31 and the first isolation transformer 1-32.
[0019] In a preferred embodiment of this invention, the first CLLC converter and the second CLLC converter may each include a primary-side full-bridge inverter unit (i.e., a primary-side switching transistor module), a secondary-side synchronous rectification unit (a secondary-side switching transistor module), and a CLLC resonant cavity unit (a resonant converter module and an output module). The CLLC resonant cavity features an asymmetrical primary-secondary structure design; the primary side consists of a resonant inductor, a magnetizing inductor, and a resonant capacitor, while the secondary-side resonant unit consists of only one resonant capacitor. Compared to a symmetrical bidirectional CLLC converter, this design eliminates the secondary-side resonant inductor, reducing the number of magnetic components and significantly decreasing the circuit board size. Furthermore, the asymmetrical structure allows for greater flexibility in forward and reverse power transmission design. By dynamically adjusting the transformer turns ratio and resonant parameters through relay units cutting the high-frequency transformer windings, the converter gain range is expanded, resulting in a wider output range. The switching transistor drive signals of the two bidirectional CLLC converters are phase-shifted by 90°, and output current ripple cancellation is achieved through interleaved control, reducing the size of the output filter components and lowering hardware costs. Meanwhile, in terms of current stress, the interleaved parallel design greatly reduces the pressure on power devices and allows for the use of smaller packaged devices, further improving the integration of the circuit board.
[0020] In this preferred embodiment, the first input capacitor module 2-1, the first primary-side switching transistor module 1-1, the second input capacitor module, and the second primary-side switching transistor module are arranged sequentially along the first side 12 of the plate 10, that is, the input capacitor module is arranged adjacent to its switching transistor module, which can effectively filter out noise in the input signal.
[0021] The first resonant converter module 1-3, together with the first primary-side switch module 1-1 and the first secondary-side switch module 1-5, forms a symmetrical, staggered parallel layout. The second resonant converter module 1-4, together with the second primary-side switch module 1-2 and the second secondary-side switch module 1-6, has a gap between it and the first resonant converter module 1-3. A gap is also left between the first resonant unit 1-31 and the first isolation transformer 1-32. Therefore, heat dissipation gaps are reserved between the magnetic components, resulting in a better heat dissipation channel for the circuit board.
[0022] like Figures 1-2 As shown, the high power density bidirectional CLLC circuit board of this invention further includes a first auxiliary power supply module 4-1 and a second auxiliary power supply module 4-2; the dual auxiliary power supply design draws power from the input and output sides respectively, better adapting to bidirectional power transmission. The first auxiliary power supply module 4-1 is disposed along the third side 14 of the board body 10 and adjacent to the second primary-side switching transistor module 1-2 and the second resonant converter module 1-4; the second auxiliary power supply module 4-2 is disposed along the third side 15 of the board body 10 and located between the first input capacitor module 2-1 and the output capacitor unit 3-1; the third side 14 of the board body 10 is parallel to the third side 15 of the board body 10 and perpendicular to the first side 12 and the second side 13 of the board body 10.
[0023] like Figures 1-2 As shown, the high power density bidirectional CLLC circuit board of this invention further includes a control board 5-1; the control board 5-1 is disposed along the third side 14 of the board body 10 and located between the first auxiliary power module 4-1 and the output filter unit 3-2; the control board 5-1 is detachably connected to the board body 10. The control board adopts a physically isolated modular design, which reduces the impact of power circuit interference on the control signal, and facilitates individual debugging, replacement and maintenance of the control board.
[0024] like Figures 1-2As shown, the high power density bidirectional CLLC circuit board of this invention further includes busbars 6-1 and 6-2; the busbars 6-1 and 6-2 are laid on the second surface 18 of the board body 10, directly facing the areas of the first primary-side switching transistor module 1-1, the first secondary-side switching transistor module 1-5, the first resonant converter module 1-3, the second primary-side switching transistor module 1-2, the second secondary-side switching transistor module 1-6, and the second resonant converter module 1-4. In this preferred embodiment, busbars are laid in high-current areas such as the resonant devices and transformers of the resonant converter module and the switching transistor bridge arms of the switching transistor module. Compared with traditional PCB copper pouring, laying busbars significantly improves the current carrying capacity of the circuit board, reduces parasitic parameters of the lines, further enhances the heat dissipation effect of the circuit board, and improves stability.
[0025] In a preferred embodiment of the present invention, the first primary-side switch module 1-1, the first secondary-side switch module 1-5, the second primary-side switch module 1-2, and the second secondary-side switch module 1-6 each include a plurality of SiC switch transistors.
[0026] This invention relates to a high-power-density bidirectional CLLC circuit board bidirectional CLLC converter with a two-way interleaved parallel design, a relay unit switching high-frequency transformer winding design, and optimized circuit board layout. It achieves 30kW bidirectional power conversion within a compact size. Utilizing SiC power switching devices combined with soft-switching characteristics, the circuit achieves a peak conversion efficiency of 98%. Under a given input voltage range, the circuit achieves an ultra-wide output range of 150-1000V, and stably achieves 30kW bidirectional constant power output from 300-1000V. It is widely used in bidirectional energy transmission scenarios such as electric vehicle charging and discharging devices and energy storage power stations. The use of third-generation silicon carbide (SiC) switching transistors as the core power devices significantly reduces switching and conduction losses, ensuring efficient module transmission. The optimized circuit board layout incorporates busbar design, enhancing internal overcurrent capacity and suppressing parasitic parameters, further improving operational reliability.
[0027] Although this utility model has been described through specific embodiments, those skilled in the art should understand that various modifications and equivalent substitutions can be made to this utility model without departing from its scope. Furthermore, various modifications can be made to this utility model for specific situations or materials without departing from its scope. Therefore, this utility model is not limited to the specific embodiments disclosed, but should include all embodiments falling within the scope of the claims of this utility model.
[0028] The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.
Claims
1. A high power density bidirectional CLLC circuit board, characterized in that, It includes a board body, a first CLLC converter mounted on a first surface of the board body, a second CLLC converter, and an output module; The first CLLC converter includes a first input capacitor module, a first primary-side switching transistor module, a first secondary-side switching transistor module, and a first resonant converter module; The second CLLC converter includes a second input capacitor module, a second primary-side switching transistor module, a second secondary-side switching transistor module, and a second resonant converter module; The first input capacitor module, the first primary-side switching transistor module, the second input capacitor module, and the second primary-side switching transistor module are arranged sequentially along the first side of the plate. The output module, the first secondary side switch module, and the second secondary side switch module are arranged along the second side of the plate. The first resonant conversion module and the second resonant conversion module are disposed in the middle of the plate. The first side of the plate is parallel to the second side of the plate.
2. The high power density bidirectional CLLC circuit board according to claim 1, characterized in that, The output module includes an output capacitor unit and an output filter unit; The output capacitor unit, the first secondary-side switching transistor module, the second secondary-side switching transistor module, and the output filter unit are arranged sequentially along the second side of the board.
3. The high power density bidirectional CLLC circuit board according to claim 2, characterized in that, The first resonant transformation module and the second resonant transformation module are separated by a gap.
4. The high power density bidirectional CLLC circuit board according to claim 3, characterized in that, The first resonant conversion module includes a first resonant unit, a first isolation transformer, and a first relay unit; The first side of the first resonant converter module is adjacent to the first primary-side switching transistor module and the second input capacitor module, and the second side of the first resonant converter module is adjacent to the output capacitor unit and the first secondary-side switching transistor module; The first side of the first resonant transformation module and the second side of the first resonant transformation module are parallel to each other; A gap is left between the first resonant unit and the first isolation transformer.
5. The high power density bidirectional CLLC circuit board according to claim 3, characterized in that, The second resonant conversion module includes a second resonant unit, a second isolation transformer, and a second relay unit; The first side of the second resonant converter module is adjacent to the second primary-side switching transistor module, and the second side of the second resonant converter module is adjacent to the second secondary-side switching transistor module and the output filter unit; The first side of the second resonant transformation module and the second side of the second resonant transformation module are parallel to each other; A gap is left between the second resonant unit and the second isolation transformer.
6. The high power density bidirectional CLLC circuit board according to claim 5, characterized in that, It further includes a first auxiliary source module and a second auxiliary source module; The first auxiliary source module is disposed along the third side of the plate and is adjacent to the second primary-side switching transistor module and the second resonant converter module; The second auxiliary power module is disposed along the fourth side of the plate and is located between the first input capacitor module and the output capacitor unit; The third side of the plate is parallel to the fourth side of the plate and perpendicular to the first and second sides of the plate.
7. The high power density bidirectional CLLC circuit board according to claim 6, characterized in that, Further includes a control panel; The control board is disposed along the third side of the board body and is located between the first auxiliary source module and the output filter unit; The control board is detachably connected to the board body.
8. The high power density bidirectional CLLC circuit board according to claim 7, characterized in that, It further includes a busbar; the busbar is laid on the second surface of the plate and faces the area of the first primary-side switch module, the first secondary-side switch module, the first resonant converter module, the second primary-side switch module, the second secondary-side switch module, and the second resonant converter module.
9. The high power density bidirectional CLLC circuit board according to any one of claims 1-8, characterized in that, The first primary-side switch module, the first secondary-side switch module, the second primary-side switch module, and the second secondary-side switch module each include multiple SiC switch transistors.