A new solid-state power switch, high voltage distribution box and vehicle

Abstract

The application discloses a novel solid-state power switch, a high-voltage distribution box and a vehicle, and belongs to the technical field of high-voltage distribution boxes, and comprises a frame body, a conductive part, a field effect tube, a first connecting terminal and a second connecting terminal. The frame body is surrounded to form a through hole; the conductive part is connected with the frame body, and the conductive part comprises a conductive layer, the conductive layer comprises a source electrode conductive part, a gate electrode conductive part and a drain electrode conductive part which are arranged to be insulated from each other; the drain electrode conductive part is annular; the gate electrode conductive part is U-shaped and arranged inside the annular drain electrode conductive part; the source electrode conductive part is arranged inside the annular drain electrode conductive part and at least partially arranged inside the U-shaped gate electrode conductive part; the gate electrode of the field effect tube is connected with the gate electrode conductive part, the drain electrode of the field effect tube is connected with the drain electrode conductive part, and the source electrode of the field effect tube is connected with the source electrode conductive part; and a plurality of field effect tubes are arranged at intervals along the extension direction of the U-shaped gate electrode conductive part.

Description

Technical Field

[0001] This application belongs to the field of high-voltage distribution box technology, specifically relating to a novel solid-state power switch, a high-voltage distribution box, and a vehicle. Background Technology

[0002] Vehicle high-voltage power distribution devices such as BDU (Battery Distribution Unit) and PDU (Power Distribution Unit) are often connected to the vehicle via wiring harnesses.

[0003] Currently, relays, fuses, and other devices are large in size and weight, resulting in large high-voltage power distribution devices that occupy a lot of space. This means that when laying out other vehicle components, the space occupied and weight of high-voltage power distribution devices need to be considered more carefully. Utility Model Content

[0004] Purpose of the utility model: This application develops a new type of solid-state power switch, high-voltage distribution box and vehicle, aiming to solve the technical problem that the large size and weight of devices such as relays and fuses in the prior art result in the large size and weight of high-voltage power distribution devices and the large space occupied.

[0005] Technical solution: In a first aspect, this application provides a novel solid-state power switch, comprising: The frame, which encloses a through hole; A conductive element is connected to the frame; the conductive element includes a conductive layer, the conductive layer including a source conductive element, a gate conductive element, and a drain conductive element that are insulated from each other; the drain conductive element is annular; the gate conductive element is U-shaped and disposed inside the annular drain conductive element; the source conductive element is disposed inside the annular drain conductive element and at least partially disposed inside the U-shaped gate conductive element. A field-effect transistor (FET) is disposed in the via; the gate of the FET is connected to the gate conductor, the drain of the FET is connected to the drain conductor, and the source of the FET is connected to the source conductor; a plurality of FETs are spaced apart along the U-shaped extension direction of the gate conductor. The first connecting terminal is connected to the frame, and one end extends into the through hole and is connected to the source conductive element; The second connection terminal is connected to the frame, and one end extends into the through hole and is connected to the drain conductive element.

[0006] In some cases, the conductive element further includes a substrate, which is insulated from the conductive layer and disposed on the side of the conductive layer away from the frame.

[0007] In some embodiments, the conductive element further includes an insulating layer disposed between the substrate and the conductive layer.

[0008] In some embodiments, the conductive element further includes a thermally conductive layer, which is connected to the substrate and disposed on the side of the substrate away from the conductive layer.

[0009] In some embodiments, the frame further has a groove communicating with the through hole, and the conductive element is disposed in the groove.

[0010] In some embodiments, the field-effect transistor includes an N-channel junction field-effect transistor.

[0011] Secondly, embodiments of this application also provide a high-voltage distribution box, including a novel solid-state power switch as described in any one of the first aspects.

[0012] Thirdly, embodiments of this application also provide a vehicle including the high-voltage distribution box as described in the second aspect.

[0013] Beneficial effects: Compared with the prior art, the present application provides a novel solid-state power switch, including a frame, a conductive element, a field-effect transistor, a first connection terminal, and a second connection terminal. In this application, a frame encloses a through hole for accommodating a conductive element and a field-effect transistor (FET), and for fixing a first connection terminal and a second connection terminal. The conductive element is connected to the frame. The conductive element includes a conductive layer comprising a source conductive element, a gate conductive element, and a drain conductive element that are insulated from each other. The drain conductive element is annular. The gate conductive element is U-shaped and disposed inside the annular drain conductive element. The source conductive element is disposed inside the annular drain conductive element and at least partially disposed inside the U-shaped gate conductive element. The gate of the FET is connected to the gate conductive element, the drain of the FET is connected to the drain conductive element, and the source of the FET is connected to the source conductive element. Multiple FETs are spaced apart along the extending direction of the U-shaped gate conductive element. The first connection terminal is connected to the frame, with one end extending into the through hole and connected to the source conductive element. The second connection terminal is connected to the frame, with one end extending into the through hole and connected to the drain conductive element. This application constructs a novel relay using small-volume, low-weight field-effect transistors, reducing the mass and volume of the relay device and the high-voltage distribution box. Simultaneously, by setting the gate conductor in a U-shape and arranging multiple field-effect transistors in a U-shaped direction, the overall design area of ​​the conductive layer is reduced, further decreasing the mass and volume of the relay device and the high-voltage distribution box. Attached Figure Description

[0014] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0015] Figure 1 A front view of the novel solid-state power switch provided in an embodiment of this application; Figure 2 A perspective view of the frame of the novel solid-state power switch provided in the embodiments of this application; Figure 3 A partial cross-sectional view of the conductive component in the novel solid-state power switch provided in this application embodiment; Reference numerals: 10, frame; 11, through hole; 12, groove; 20, conductive element; 21, substrate; 22, conductive layer; 221, source conductive element; 222, gate conductive element; 223, drain conductive element; 23, insulating layer; 24, thermally conductive layer; 25, first connection terminal; 26, second connection terminal; 30, field-effect transistor. Detailed Implementation

[0016] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0017] Vehicle high-voltage power distribution devices such as BDU (Battery Distribution Unit) and PDU (Power Distribution Unit) are often connected to the vehicle via wiring harnesses.

[0018] Currently, relays, fuses, and other devices are large in size and weight, resulting in large high-voltage power distribution devices that occupy a lot of space. This means that when laying out other vehicle components, the space occupied and weight of high-voltage power distribution devices need to be considered more carefully.

[0019] In view of this, please refer to Figures 1 to 3 , Figure 1 This is a front view of the novel solid-state power switch provided in an embodiment of this application. Figure 2 This is a perspective view of the frame of the novel solid-state power switch provided in the embodiments of this application. Figure 3This is a partial cross-sectional view of the conductive component in a novel solid-state power switch provided in an embodiment of this application. The embodiment of this application provides a novel solid-state power switch, including a frame 10, a conductive component 20, a field-effect transistor 30, a first connection terminal 25, and a second connection terminal 26. The frame 10 in this application forms a through hole 11 for accommodating the conductive component 20 and the field-effect transistor 30 and fixing the first connection terminal 25 and the second connection terminal 26. The conductive component 20 is connected to the frame 10. The conductive component 20 includes a conductive layer 22, which includes a source conductor 221, a gate conductor 222, and a drain conductor 223 that are insulated from each other. The drain conductor 223 is annular; the gate conductor 222 is U-shaped and disposed inside the annular drain conductor 223; the source conductor 221 is disposed inside the annular drain conductor 223 and extends to... A small portion is disposed inside the U-shaped gate conductor 222; the gate of the field-effect transistor 30 is connected to the gate conductor 222, the drain of the field-effect transistor 30 is connected to the drain conductor 223, and the source of the field-effect transistor 30 is connected to the source conductor 221; multiple field-effect transistors 30 are spaced apart along the extension direction of the U-shape of the gate conductor 222; the first connection terminal 25 is connected to the frame 10, and one end extends into the through hole 11 and is connected to the source conductor 221; the second connection terminal 26 is connected to the frame 10, and one end extends into the through hole 11 and is connected to the drain conductor 223. This application constructs a novel relay using small-volume and low-weight field-effect transistors 30, reducing the mass and volume of the relay device and the high-voltage distribution box; at the same time, by setting the gate conductor 222 to a U-shape and arranging multiple field-effect transistors 30 in the U-shaped direction, the overall design area of ​​the conductive layer 22 is reduced, further reducing the mass and volume of the relay device and the high-voltage distribution box.

[0020] In some embodiments, the frame 10 in this application is a rectangular frame or a square frame, and the outer frame of the frame 10 encloses an internal through hole 11 for placing the field-effect transistor 30, while reserving space for the connection of the conductive component 20 and external circuits such as a PCB board. Specifically, the frame 10 is an insulating plastic component.

[0021] In some embodiments, the conductive element 20 in this application is connected to the frame 10. Specifically, the frame 10 in this application also has a groove 12, which communicates with the through hole 11. The conductive element 20 is disposed in the groove 12, and the groove 12 limits the conductive element 20.

[0022] In some embodiments, the field-effect transistor 30 in this application is connected to the conductive element 20 and disposed in the through hole 11. Specifically, the field-effect transistor 30 in this application includes an N-channel junction field-effect transistor.

[0023] In some embodiments, the conductive element 20 in this application includes a substrate 21 and a conductive layer 22. The substrate 21 is connected to the frame 10, and the conductive layer 22 is insulatedly deposited on the substrate 21 and disposed on the side of the substrate 21 facing the frame 10. The field-effect transistor 30 is connected to the conductive layer 22 and disposed on the side of the conductive layer 22 close to the frame 10. In this application, the substrate 21 is an aluminum substrate, and the conductive layer 22 is a copper conductive layer.

[0024] In some embodiments, the conductive layer 22 in this application includes a source conductor 221, a gate conductor 222, and a drain conductor 223 that are mutually insulated from each other; the drain conductor 223 is annular; the gate conductor 222 is U-shaped and disposed inside the annular drain conductor 223; the source conductor 221 is disposed inside the annular drain conductor 223 and at least partially disposed inside the U-shaped gate conductor 222. In this application, the source conductor 221, the gate conductor 222, and the drain conductor 223 are all copper conductive plates. Specifically, if the source conductor 221, gate conductor 222, and drain conductor 223 are arranged in a straight line, the multiple field-effect transistors 30 are arranged along the straight line direction of the source conductor 221, gate conductor 222, and drain conductor 223. In a specific design, the relay has a length of 102.65 mm and a width of 76.7 mm. However, in this application, the gate conductor 222 is set as U-shaped, and the multiple field-effect transistors 30 are arranged in the U-shaped direction. In a specific design, the relay has a length of 88.65 mm and a width of 76.7 mm. Although the size increases by 2.9% in the width direction, the size decreases by 15.8% in the length direction, further optimizing the size space.

[0025] In some embodiments, to achieve the connection between the field-effect transistor 30 and the conductive layer 22, the gate of the field-effect transistor 30 is connected to the gate conductor 222, the drain of the field-effect transistor 30 is connected to the drain conductor 223, and the source of the field-effect transistor 30 is connected to the source conductor 221.

[0026] In some embodiments, when multiple field-effect transistors 30 are provided, the multiple field-effect transistors 30 are spaced apart along the U-shaped extension direction of the gate conductor 222.

[0027] In some embodiments, the conductive element 20 of this application further includes a first connecting terminal 25 and a second connecting terminal 26; the first connecting terminal 25 is connected to the frame 10, and one end extends into the through hole 11 and is connected to the source conductive element 221; the second connecting terminal 26 is connected to the frame 10, and one end extends into the through hole 11 and is connected to the drain conductive element 223. External devices are connected through the first connecting terminal 25 and the second connecting terminal.

[0028] In some embodiments, the conductive element 20 further includes an insulating layer 23, which is connected to the substrate 21, and a conductive layer 22 is disposed on the insulating layer 23, thereby achieving the purpose of disposing the insulating layer 23 between the substrate 21 and the conductive layer 22.

[0029] In some embodiments, the conductive element 20 further includes a thermally conductive layer 24, which is connected to the substrate 21 and disposed on the side of the substrate 21 away from the conductive layer 22.

[0030] Understandably, the novel solid-state power switch provided in this application includes a frame 10, a conductive element 20, a field-effect transistor 30, a first connection terminal 25, and a second connection terminal 26. The frame 10 in this application encloses a through hole 11 for accommodating the conductive element 20 and the field-effect transistor 30 and fixing the first connection terminal 25 and the second connection terminal 26. The conductive element 20 is connected to the frame 10. The conductive element 20 includes a conductive layer 22, which includes a source conductive element 221, a gate conductive element 222, and a drain conductive element 223 that are insulated from each other. The drain conductive element 223 is annular; the gate conductive element 222 is U-shaped and disposed inside the annular drain conductive element 223; the source conductive element 221 is disposed inside the annular drain conductive element 223 and extends to... A small portion is disposed inside the U-shaped gate conductor 222; the gate of the field-effect transistor 30 is connected to the gate conductor 222, the drain of the field-effect transistor 30 is connected to the drain conductor 223, and the source of the field-effect transistor 30 is connected to the source conductor 221; multiple field-effect transistors 30 are spaced apart along the extension direction of the U-shape of the gate conductor 222; the first connection terminal 25 is connected to the frame 10, and one end extends into the through hole 11 and is connected to the source conductor 221; the second connection terminal 26 is connected to the frame 10, and one end extends into the through hole 11 and is connected to the drain conductor 223. This application constructs a novel relay using small-volume and low-weight field-effect transistors 30, reducing the mass and volume of the relay device and the high-voltage distribution box; at the same time, by setting the gate conductor 222 to a U-shape and arranging multiple field-effect transistors 30 in the U-shaped direction, the overall design area of ​​the conductive layer 22 is reduced, further reducing the mass and volume of the relay device and the high-voltage distribution box.

[0031] Accordingly, embodiments of this application also provide a high-voltage distribution box, including the novel solid-state power switch provided in embodiments of this application.

[0032] Accordingly, embodiments of this application also provide a vehicle including the high-voltage distribution box provided in embodiments of this application.

[0033] This application has provided a detailed description of a novel solid-state power switch, a high-voltage distribution box, and a vehicle according to the embodiments of this application. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A novel solid-state power switch, characterized in that, include: A frame (10) is formed by enclosing a through hole (11); A conductive element (20) is connected to the frame (10); the conductive element (20) includes a conductive layer (22), the conductive layer (22) includes a source conductive element (221), a gate conductive element (222) and a drain conductive element (223) that are insulated from each other; the drain conductive element (223) is annular; the gate conductive element (222) is U-shaped and is disposed inside the annular drain conductive element (223); the source conductive element (221) is disposed inside the annular drain conductive element (223) and is at least partially disposed inside the U-shaped gate conductive element (222); A field-effect transistor (30) is disposed in the through hole (11); the gate of the field-effect transistor (30) is connected to the gate conductor (222), the drain of the field-effect transistor (30) is connected to the drain conductor (223), and the source of the field-effect transistor (30) is connected to the source conductor (221); a plurality of field-effect transistors (30) are spaced apart along the U-shaped extension direction of the gate conductor (222); The first connecting terminal (25) is connected to the frame (10), and one end extends into the through hole (11) and is connected to the source conductive element (221). The second connection terminal (26) is connected to the frame (10), and one end extends into the through hole (11) and is connected to the drain conductor (223).

2. The novel solid-state power switch according to claim 1, characterized in that, The conductive element (20) further includes a substrate (21), which is insulated from the conductive layer (22) and is disposed on the side of the conductive layer (22) away from the frame (10).

3. The novel solid-state power switch according to claim 2, characterized in that, The conductive element (20) further includes an insulating layer (23), which is disposed between the substrate (21) and the conductive layer (22).

4. The novel solid-state power switch according to claim 2, characterized in that, The conductive element (20) further includes a thermally conductive layer (24), which is connected to the substrate (21) and disposed on the side of the substrate (21) away from the conductive layer (22).

5. The novel solid-state power switch according to claim 1, characterized in that, The frame (10) also has a groove (12) that communicates with the through hole (11), and the conductive element (20) is disposed in the groove (12).

6. The novel solid-state power switch according to claim 1, characterized in that, The field-effect transistor (30) includes an N-channel junction field-effect transistor.

7. A high-voltage distribution box, characterized in that, Including the novel solid-state power switch as described in any one of claims 1 to 6.

8. A vehicle, characterized in that, Includes the high-voltage distribution box as described in claim 7.

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