Method for manufacturing a chip module

Abstract

Method for manufacturing a chip module (72, 89) with a carrier substrate (30, 81) and at least one chip (33) arranged on the carrier substrate (30, 81) and a contact conductor arrangement (45) for connecting chip connection surfaces (34) with connection contacts (69, 70, 71) arranged on a contact side (56) of the chip module (72, 89), in which the chip (33) is fixed to the carrier substrate (30, 81) with its front side provided with the chip connection surfaces (34) and subsequently the formation of the contact conductor arrangement (45) is carried out by structuring a contact material layer (31, 80) of the carrier substrate (30, 81), wherein, prior to the formation of the contact conductor arrangement (45) to form a covering material layer (35) enclosing the chip (33), a covering material is applied to the carrier substrate (30, 81), the covering material layer (35) is provided from its upper side (37) with at least one contact recess (38) which exposes the contact material (31) to form a contact surface (39) on the contact material layer (31) of the carrier substrate (30), the contact recess (38) is filled with contact material (40) to form a contact column (42), wherein the cladding material layer (35) is machined from its upper side (37) to expose a chip back side (36) such that the chip back side and the contact column (42) are arranged flush in a cladding material surface (41) formed by the machining, wherein a contact material layer (43) is subsequently applied to the surface of the encapsulation material (41), which is subsequently structured to form a chip rear contact conductor arrangement (51, 62) such that the chip rear (36) is electrically connected via the contact column (42) to the contact conductor arrangement (45) arranged on the front side of the chip (33).

Description

[0001] The invention relates to a method for manufacturing a chip module with a carrier substrate and at least one chip arranged on the carrier substrate as well as a contact conductor arrangement for connecting chip connection surfaces with connection contacts arranged on a contact side of the chip module, in which the chip is fixed to the carrier substrate with its front side provided with the chip connection surfaces and subsequently the formation of the contact conductor arrangement is carried out by structuring a contact material layer of the carrier substrate.

[0002] Chip modules, often referred to as "chip packages" in technical terminology, essentially consist of a substrate equipped with a contact arrangement and a chip protected within a chip package. The chip is contacted via its contact pads to the contact arrangement. The primary function of the contact arrangement is to provide a suitable array of contacts for external contacting of the chip module. These contacts are spaced further apart than the chip's contact pads and have larger contact areas to simplify external contacting of the chip module.

[0003] In particular, the contact conductor arrangement allows for adaptation to the connection contact arrangements of other chip modules or circuit boards, enabling the chip module to be contacted with the other chip module or circuit board without any further rewiring. The contact conductor arrangement can therefore also be considered an integrated "rewiring" of the chip module, eliminating the need for external rewiring between chip modules to be connected. The specific layout or distribution of the external connection contacts, which individualizes the chip module, is also frequently referred to as the "footprint."

[0004] Known methods for manufacturing a chip module, for example, involve using a substrate made of a dielectric material as the chip carrier, which is provided with a contact conductor arrangement to form the "internal rewiring", whereby after manufacturing the contact conductor arrangement, the chip is contacted on the chip carrier and subsequently a chip housing for the chip is formed on the chip carrier by encasing the chip in a so-called "mold", which is applied to the chip in a liquid state and, after hardening, forms the intended protective housing for the chip.

[0005] US Patent 5,497,033 A describes an embedded substrate for integrated switching modules with a base layer comprising an insulating layer formed as a film layer and an adhesive layer. The insulating layer can be structured to expose the module's terminal contacts. US Patent 2009 / 0194882 A1 discloses a method for manufacturing a chip module, wherein the chip module comprises at least one chip mounted on a substrate and a contact conductor arrangement for connecting chip terminal pads to terminal contacts located on a contact side of the chip module. The chip is fixed to the substrate with its front face, which contains the chip terminal pads. A cladding layer is provided to enclose the chip, which can be selectively removed in certain areas to form contact pillars.A method for manufacturing a chip module is also known from US patent 2012 / 0273960 A1. This method comprises a contact conductor arrangement formed from a contact material layer, with contacts that enable contact with chip termination pads located on the front side of a chip. However, a disadvantage of the known methods is that contact with the front side of the chip, and also with the back side of the chip, is not possible using the known contact conductor arrangements located on the front side of the chip.

[0006] The present invention is based on the objective of proposing a method that significantly simplifies the manufacture of a chip module and, in particular, enables the industrial production of chip modules in high quantities at low cost.

[0007] To solve this problem, the method according to the invention has the features of claim 1 or claim 2.

[0008] In the inventive method, the chip, with its front side provided with chip contact surfaces, is fixed to a contact material layer of a carrier substrate. After the chip has been fixed to the carrier substrate for positioning, the contact conductor arrangement is formed by structuring the contact material of the carrier substrate. This eliminates the need for chip carriers that are already provided with a contact conductor arrangement. Instead, the formation of the contact conductor arrangement with a footprint that individualizes the chip module can be carried out together with the production of the chip module.

[0009] In contrast to the known method discussed at the outset, in the inventive method for manufacturing a chip module, the chip is arranged on the substrate before the contact conductor arrangement is formed. Furthermore, the contact conductor arrangement is formed by structuring the substrate formed from the contact material.

[0010] Preferably, the chip is fixed to the substrate by positioning its front side, which is equipped with chip contact pads, on an adhesive coating of the contact material layer of the substrate. Due to the adhesive coating of the substrate, it is unnecessary, for example, to provide recesses or similar features in the substrate to define the chip's position. This allows the substrate to be designed with particularly simple, flat surfaces.

[0011] It is particularly advantageous if the substrate is formed from a contact material film, which allows for a particularly thin design of the substrate formed from the contact material. Furthermore, the contact material film for forming the substrate can be provided as a continuous material, thus facilitating automated inline production of the chip module in large quantities, since the contact material film can simultaneously be used as a continuous conveyor for timed pre-movement in the chip module manufacturing process.

[0012] It is particularly advantageous if a contact material film is used for the substrate which is already provided with an adhesive coating, so that the application of an adhesive coating in a separate process step prior to the placement of the chip on the substrate is not necessary.

[0013] If contact recesses are formed by structuring the carrier substrate in overlap with the chip connection surfaces, and these recesses are filled with contact material to connect the chip connection surfaces to the contact conductor arrangement, the formation of connecting contacts that establish an electrically conductive connection between the contact conductor arrangement and the chip connection surfaces can be carried out in a particularly simple manner.

[0014] For example, the connection contacts can be formed by using a solder material as the contact material, which is applied into the contact recesses. Such an application of solder material can be achieved, for instance, by a process in which molten solder deposits are flung onto the chip connection surfaces accessible via the contact recesses.

[0015] Another way to introduce contact material into the contact recesses is by means of a deposition process. In principle, both electroplating and electroless deposition processes are suitable, with the contact material preferably deposited autocatalytically, for example, by depositing nickel and / or gold. To improve the adhesion between the autocatalytically deposited metals and the chip contact surfaces, it is advantageous to electrolytically treat the contact surfaces with zincate or palladium to "nucleate" the chip contact surfaces.

[0016] As an alternative to contacting the chip connection surfaces with the substrate by forming contact recesses in the contact material layer by structuring the contact material layer and filling the contact recesses with contact material, contacting the chip connection surfaces with the contact material layer can also be carried out independently of the structuring of the contact material layer before forming the contact conductor arrangement.

[0017] Preferably, to contact the chip termination areas with the contact material layer, the chip termination areas provided with contact protrusions are brought into contact with the contact material layer, and subsequently the connection of the chip termination areas to the contact material layer is achieved by melting the contact protrusions. The fixation of the chip to the substrate can also occur simultaneously with the formation of the connection contact to the contact material layer.

[0018] It is particularly advantageous if the melting of the contact protrusions is carried out by means of laser exposure of the chip or the contact material layer.

[0019] In a particularly preferred embodiment of the method, a covering material is applied to the substrate before the contact conductor arrangement is formed to create a covering material layer that encloses the chip. This not only forms a housing for the chip, but also simultaneously provides mechanical stabilization of the substrate, so that the subsequent formation of the contact conductor arrangement by structuring the contact material of the substrate is possible without separate mechanical support devices for the substrate.

[0020] In particular, when the encapsulation material is applied to the chip as an encapsulation layer, such that the chip is sandwiched between the encapsulation layer and the substrate, and the encapsulation layer is subsequently bonded to the substrate in a lamination process to form a laminate structure encompassing the substrate, the encapsulation layer forms a support structure stiffening the substrate, so that even in the case of the substrate being formed as a film material, the substrate can be processed to structure the contact material layer without the flexibility of the substrate making the processing more difficult.

[0021] In a preferred embodiment of the method, if the cladding material layer is provided from its upper side with at least one contact recess which exposes the contact material of the carrier substrate to form a contact surface on the contact material layer of the carrier substrate, a through-hole connection of the cladding material layer with direct contact to the contact conductor arrangement of the carrier substrate can be established.

[0022] The contact recess can be filled with contact material to form a contact column, or contact material introduced into the contact recess by a deposition process can be used to form a contact column.

[0023] A particularly thin design of the chip module becomes possible if the encapsulation material layer is machined from its top side to expose a chip back, such that the chip back and the contact column are arranged flush in an encapsulation material surface formed by the machining.

[0024] A base metallization can preferably be applied to both the back of the chip and the surface of the casing material and the contact column, which is subsequently provided with a contact material layer in order to electrically connect the back of the chip to the contact conductor arrangement arranged on the front of the chip, so that the back of the chip can be used as a connection surface for an electric field.

[0025] Simultaneously or alternatively, process heat can be dissipated from the back of the chip to the contact conductor arrangement via the contact material layer, making the method according to the invention particularly suitable for the production of power modules.

[0026] The contact conductor material layer can be structured to form a chip backside contact conductor arrangement.

[0027] In contrast to forming a base metallization on a previously material-removing surface of the cladding material layer, the base metallization can also be applied to the surface of the cladding material layer before the contact recesses are formed in the cladding material layer, and subsequently a contact material can be applied to the base metallization and structured to form a chip backside contact conductor arrangement.

[0028] Starting from such a structuring of the contact material layer, in order to form a through-hole connection in the cladding material layer, the cladding material layer can be provided from its upper side with at least one contact recess, which exposes the contact material to form a contact surface on the contact material layer of the support substrate, and subsequently the contact recess can be filled with a contact column of contact material to form the through-hole connection.

[0029] For contacting the back of the chip, it is particularly advantageous if the back of the chip is first exposed by applying laser radiation to the casing material and subsequently a contact material is deposited onto the back of the chip to create a contact between the back of the chip and the back of the chip contact layer.

[0030] The following section explains various methods for manufacturing a chip module, with reference to the drawing.

[0031] They show: Fig. 1 to 13 the manufacture of a chip module according to a first embodiment of the method in successive process steps; Fig. 14 to 21 the manufacture of a chip module according to a variant of the process in different successive process steps; Fig. 22 and Fig. 23 the formation of a connecting contact between chips and a carrier substrate via contact enhancements; Fig. 24 the laminate structure of a chip module before structuring of the contact material layer; Fig. 25 the structuring of the contact material layer for the formation of the chip module; Fig. 26 the laminate structure of a chip module before structuring of the contact material layer; Fig. 27 the structuring of the contact material layer for the formation of the chip module.

[0032] Fig. Figure 1 shows, as a starting point for carrying out the process, the provision of a carrier substrate 30 with a metallic foil formed from a contact material 31, which in this case is a copper foil. The carrier substrate 30 is provided with an adhesive coating 32, which can, for example, be a thermally activatable epoxy resin. However, it is also conceivable that the coating is designed as an adhesive layer that is also independent of activation and which can be provided with a peel-off paper or similar material for handling or providing the carrier foil, so that the carrier foil can, for example, also be kept ready in roll form, i.e., rolled up.

[0033] How Fig. Figure 2 shows that at the beginning of the process, at least one chip, in this case several chips 33, are arranged on the support substrate 30 with their downward-facing chip connection surfaces 34, whereby the adhesive coating 32 provides fixation that positions the chips 33 on the support substrate 30.

[0034] Subsequently, a coating material layer 35, preferably consisting of a material mixture comprising essentially an epoxy resin, is arranged on the chips 33 such that the chips 33 are now sandwiched between the support substrate 30 and the coating material layer 35. In the following lamination step, the coating material layer 35 is brought into contact with the support substrate 30 under the simultaneous influence of pressure and temperature, whereby the material of the coating material layer 35 is displaced by the chips 33, with the result that, as described in Fig. Figure 3 shows that, after completion of the lamination step, the chips 33 are embedded in the encapsulation material layer 35, such that, in particular, the back sides 36 of the chips 33 are covered by the material of the encapsulation material layer 35. The composition of the encapsulation material layer 35 is selected such that the coefficient of thermal expansion of the encapsulation material is as close as possible to the coefficient of thermal expansion of the contact material 31 of the support substrate 30. For example, this can be achieved by adding a sufficient amount of silicon oxide as a filler to the epoxy base of the encapsulation material, resulting, for example, in a coefficient of thermal expansion in the range of 7 to 8 K. -1 is achievable, which is determined by the thermal expansion coefficient of copper, which is preferably an essential component of the contact material 31 and which has a thermal expansion coefficient of about 16 K -1The layers are not spaced so far apart that delamination between the layer of coating material 35 and the support substrate 30 would be expected after the coating material layer 35 has cured. Rather, the flexibility of the coating material 35 remaining even after curing is sufficient to compensate for the difference in the coefficient of thermal expansion.

[0035] By fixing the chips 33 during the lamination process, which in this case is achieved by the adhesive coating 32, it is prevented that the chips 33 change position on the substrate 30 during the curing of the coating material 35.

[0036] How Fig. As shown in Figure 4, after the material of the cladding layer 35 has hardened, contact recesses 38 are formed in the cladding layer 35 from a top surface 37, which expose the contact material 31 of the carrier substrate 30 to form an inner contact surface 39. Preferably, the formation of the contact recesses 38 can be achieved by irradiating the top surface 37 of the cladding layer 35 with laser radiation.

[0037] Then, as in Fig. Figure 5 shows the filling of the contact recesses 38 with a contact material 40, which can, for example, be deposited autocatalytically onto the contact surfaces 39. Preferably, prior to deposition of the contact material 40 onto the contact surfaces 39, the contact surfaces 39 can be seeded with, for example, zincate or palladium to improve the adhesion between the contact material 40 deposited onto the contact surface 39 and the contact surface 39 itself. The contact material 40 is preferably selected to have a material composition identical to that of the contact material 31 and comprising at least a predominantly copper-based composition.

[0038] Then, as in Fig. Figure 6 shows a material-removing machining of the cladding material layer 35, with the result that in the cladding material surface 41 thereby created, both the surfaces of the contact material columns 42 formed by the contact material 40 in the contact recesses 38 and the chip backs 36 are arranged flush in the cladding material surface 41. Simultaneously, a thinning of the chips 33, i.e., a reduction in the height of the chips 33, can occur.

[0039] In a subsequent process step, preferably after prior training of a Fig. 7 shown base metallization 44 on the surface of the cladding material 41, the formation of a in Fig. The contact material layer 43 shown in Figure 8 is located on the cladding material layer 35, wherein copper or a copper alloy is preferably selected as the contact material of the contact material layer 43. The intermediate metallization 44 can be formed, for example, by depositing the material of the base metallization 44 onto the cladding material surface 41, for example by sputtering a titanium / copper alloy. The contact material layer 43 can then be deposited onto the base metallization 44, whereby the deposition can optionally be carried out electroplating or autocatalytically.

[0040] To train a in Fig. In the chip backside contact conductor arrangement 51 shown in Figure 9, the contact material layer 43 applied to the cladding material layer 35 is preferably lithographically structured such that the chip backside contact conductor arrangement 51 in the present case has two contact conductors 52, 53, each of which connects a chip backside 36 to a contact column 42.

[0041] To form a structure created by structuring the carrier substrate 30 and in Fig. The contact conductor arrangement 45 shown in section 12 now takes place, as can be seen from the sequence of the Fig. 10 and Fig. As can be clearly seen in Figure 11, the substrate 30 is first processed in a lithographic process step, so that contact conductors 46, 47, 48 and contact recesses 49 are formed in the substrate 30. Preferably, in addition to the lithography process, following the removal of the contact material 31 from the substrate 30 to form the contact recesses 49, the chip contact surfaces 34 are treated with a laser to clean them superficially, in particular to remove any remaining residues of the adhesive coating 32.The formation of connecting contacts 68, which connect the contact conductors 46, 47, 48 to the chip connection surfaces 34, is then preferably carried out by autocatalytic deposition of a contact material 50, which preferably consists of copper or a copper alloy and which is further preferably deposited without current onto the chip connection surfaces 34 which have previously been seeded with zincate or palladium.

[0042] Based on the in Fig. The completion of the contact conductors 46, 47, 48, as shown in the 11 illustrations and formed in the first lithographic process step, takes place in Fig. 12 shown contact conductor arrangement 45 and thus the formation of a based on the in Fig. In a second lithographic process step, the chip module 72 produced on the carrier substrate 30 shown in Figure 1 is formed from the contact conductors 46 and 48 into connection contacts 69, 70 and 71. The connection contacts 69 enable contacting of the chip back surfaces 36 via the contact columns 42 and the contact conductors 52 and 53, respectively, and the connection contacts 70 and 71 enable contacting of the chip connection surfaces 34.

[0043] How a synthesis of Fig. 12 and Fig. As shown in Figure 13, both a connection contact side 56 and a rear side 57 of the chip module 72 are subsequently provided with a passivation 58, 59 preferably formed from an epoxy resin, wherein contact recesses 60 are formed in the passivation 58 of the outer contact side 56, which expose contact surfaces 61, so that solder bumps 62 can be applied to the contact surfaces 61, which enable contact points for possible external contacting of the chip module 72.

[0044] In the sequence of Fig. Sections 14 to 21 illustrate a variant of the procedure, in which, starting from the one in Fig. 3. The process is as follows: after positioning and fixing the chips 33 with their contact surfaces 34 on the carrier substrate 30, the top surface 37 of the cladding material layer 35 is provided with the contact material layer 43, without first, as in Fig. Figure 6 shows that a material-removing machining of the surface of the cladding material 41 has taken place.

[0045] As in Fig. As shown in section 15, the first step in the development of a Fig. 19 Chip backside contact conductor arrangement 62 shown, preferably by using a lithographic process, the formation of a contact structure 63 on the cladding material layer 35 and subsequently, as in Fig. Figure 16 shows the formation of contact recesses 64 in the cladding material layer 35, which expose the contact material 31 of the carrier substrate 30 in the area of ​​contact surfaces 39, so that, as in Fig. 17 shown and as already referred to in the Fig. 4 and Fig. 5 described, contact columns 42 can be formed in the covering material layer 35.

[0046] After the in Fig. In the exposure of the chip backs 36 shown in Figure 18, for example by irradiating the top surface 37 of the encapsulation material layer 35 with laser radiation, contact recesses 64 and contact surfaces 65 of the contact columns 42 formed on the chip backs 36 in the encapsulation material layer 35 are preferably provided with a contact material 66 by electroless deposition of copper or a copper alloy, which in conjunction with the contact structure 63 previously formed by structuring the contact material layer 43 forms contact conductors 67, each of which connects a chip back 36 to a contact column 42, as shown in Figure 18. Fig. 19 shown.

[0047] To form the contact conductor arrangement 45 from the carrier substrate 30, the following now takes place, as already mentioned with reference to the Fig. 10 to 12 described the structuring of the carrier substrate 30, so that the in Fig. 20 Chip module 73 is formed.

[0048] How a synthesis of Fig. 20 and Fig. As shown in Figure 21, both the connection contact side 56 and a rear side 57 of the chip module 73 are subsequently provided with a passivation 58, 59 preferably formed from an epoxy resin, wherein contact recesses 60 are formed in the passivation 58 of the outer contact side 56, which expose contact surfaces 61, so that solder bumps 62 can be applied to the contact surfaces 61, which enable contact points for possible external contacting of the chip module 73.

[0049] In the Fig. 22 and Fig. 23 is an alternative to the one in the Fig. 10 and Fig. Figure 11 shows the contacting of the chip connection surfaces 34 with the carrier substrate 30 by forming contact recesses 49 in the contact material layer 31 by structuring the contact material layer 31 and subsequently filling the contact recesses 49 with contact material 50. For this purpose, the contact material layer 31 is structured before the contact recesses 49 are formed. Fig. 25 and Fig. 27 shown contact conductor arrangement 45 a contacting of the chip connection surfaces 34 with a contact material layer 80 of a carrier substrate 81, which is provided with an electrically non-conductive adhesive coating 82.

[0050] In the Fig. 22 and Fig. In the illustrated embodiment 23, the chip contact surfaces 34 are provided with contact protrusions 83 to prepare them for contacting the contact material layer 80. These protrusions are brought into contact with the contact material layer 80 and subsequently fused to it by melting. In the illustrated embodiment, the chips 33 are fixed to the substrate 81 by means of the adhesive 82 before the connection is made.

[0051] To melt the contact protrusions 83, the contact material layer 80 or the chips 33 are subjected to laser radiation from their back side.

[0052] After production of the in Fig. The connection of the chips 33 with the carrier substrate 81 shown in 23 is carried out with reference to the Fig. 3 to 9 concerning the manufacture of chip module 72 and the Fig. Sections 14 to 19 concerning the manufacture of the chip module 73 explain the process steps, so that a in Fig. 24 or Fig. The laminate structure 84 or 85 shown in Figure 26 is produced on the basis of the carrier substrate 81.

[0053] Based on the laminate structure 84 or 85, which until then still has an unstructured contact material layer 80 of the carrier substrate 81, a process now takes place in the Fig. 25 and Fig. 27 structuring of the contact material layer 80 for forming the contact conductor arrangement 45, such that contact recesses 86, 87, 88 are formed in the contact material layer 80 to define the connection contacts 69, 70, 71 preferably by a photolithographic process or laser ablation.

[0054] The chip modules 89 and 90 produced in this way can then be used like those in the Fig. 13 and Fig.The chip modules 72, 73 shown in Figure 21 are provided with a passivation 58, 59, preferably made of an epoxy resin, on both the connection contact side 56 and their back side 57, wherein contact recesses 60 are formed in the passivation 58 of the outer contact side 56, which expose contact surfaces 61, so that solder bumps 62 can be applied to the contact surfaces 61, which enable contact points for possible external contacting of the chip modules 89, 90.

Claims

[1] Method for manufacturing a chip module (72, 89) with a carrier substrate (30, 81) and at least one chip (33) arranged on the carrier substrate (30, 81) and a contact conductor arrangement (45) for connecting chip connection surfaces (34) with connection contacts (69, 70, 71) arranged on a contact side (56) of the chip module (72, 89), wherein the chip (33) is fixed to the carrier substrate (30, 81) with its front side provided with the chip connection surfaces (34) and subsequently the formation of the contact conductor arrangement (45) is carried out by structuring a contact material layer (31, 80) of the carrier substrate (30, 81), wherein, prior to the formation of the contact conductor arrangement (45) to form a covering material layer (35) enclosing the chip (33), a covering material is applied to the carrier substrate (30, 81), the covering material layer (35) is provided from its upper side (37) with at least one contact recess (38) which exposes the contact material (31) to form a contact surface (39) on the contact material layer (31) of the carrier substrate (30), the contact recess (38) is filled with contact material (40) to form a contact column (42), wherein the cladding material layer (35) is machined from its upper side (37) to expose a chip back side (36) such that the chip back side and the contact column (42) are arranged flush in a cladding material surface (41) formed by the machining, wherein a contact material layer (43) is subsequently applied to the surface of the encapsulation material (41), which is subsequently structured to form a chip rear contact conductor arrangement (51, 62) such that the chip rear (36) is electrically connected via the contact column (42) to the contact conductor arrangement (45) arranged on the front side of the chip (33). [2] Method for manufacturing a chip module (73, 90) with a carrier substrate (30, 81) and at least one chip (33) arranged on the carrier substrate (30, 81) and a contact conductor arrangement (45) for connecting chip connection surfaces (34) with connection contacts (69, 70, 71) arranged on a contact side (56) of the chip module (73, 90), in which the chip (33) is fixed with its front side provided with the chip connection surfaces (34) on the carrier substrate (30, 81) and subsequently the formation of the contact conductor arrangement (45) is carried out by structuring a contact material layer (31, 80) of the carrier substrate (30, 81), wherein prior to the formation of the contact conductor arrangement (45) to form a covering material layer (35) enclosing the chip (33), a covering material is applied to the carrier substrate (30, 81), wherein a contact material layer (43) is subsequently applied to a covering material surface (41), which is subsequently structured to form a chip backside contact conductor arrangement (62), wherein the cladding material layer (35) is provided from its upper side (37) with at least one contact recess (38) which exposes the contact material (31) to form a contact surface (39) on the contact material layer (31) of the support substrate (30), and subsequently the contact recess is filled with a contact material (40) to form a contact column (42), and a chip back side (36) is exposed by applying laser radiation to an upper side (37) of the cladding material layer (35), and subsequently contact recesses (64) and contact surfaces (65) of the contact columns (42) formed on the chip back side (36) in the cladding material layer (35) are provided with a contact material (66) which, in conjunction with the contact structure (63) previously formed by structuring the contact material layer (43), forms contact conductors (67), each of which connects the chip back side (36) to a contact column (42). connect, in such a way,that the back of the chip (36) is electrically connected via the contact column (42) to the contact conductor arrangement (45) located on the front of the chip (33). [3] Method according to claim 1 or 2, wherein the fixation of the chip (33) on the carrier substrate (30) is carried out by means of an adhesive coating (32) of the contact material layer (31) of the carrier substrate (30). [4] Method according to claim 3, wherein the carrier substrate (30) is formed from a contact material film provided with the adhesive coating (32). [5] Method according to one of the preceding claims, wherein contact recesses (49) are formed by structuring the contact material layer (31) of the carrier substrate (30) in overlap with the chip connection surfaces (34), which are filled with contact material (50) for contacting the chip connection surfaces (34) with the contact conductor arrangement (45). [6] Method according to claim 5, wherein a solder material is used as the contact material (40, 50). [7] Method according to claim 6, wherein the contact material (40, 50) is introduced into the contact recesses (38, 49) by a deposition process. [8] Method according to one of the preceding claims, wherein the chip connection surfaces (34) are contacted with the contact material layer (80) prior to the formation of the contact conductor arrangement (45). [9] Method according to claim 8, wherein, for contacting the chip connection surfaces (34) with the contact material layer (80), the chip connection surfaces (34) provided with contact protrusions (83) are brought into contact with the contact material layer (80), and subsequently the connection of the chip connection surfaces (34) with the contact material layer is carried out by melting the contact protrusions (83). [10] Method according to claim 9, wherein the melting of the contact protrusions (83) is carried out by means of a laser action on the chip (33) or the contact material layer (80). [11] Method according to one of the preceding claims, wherein the cladding material is applied as a cladding material layer (35) to the chip (33) such that the chip (33) is arranged sandwich-like between the cladding material layer and the support substrate (30, 81), and the cladding material layer is subsequently bonded to the support substrate (30, 81) in a lamination process to form a laminate structure encompassing the support substrate (30, 81).

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