Metal-layer-free thermopile with optimized layout

Abstract

Thermopile, with at least one first thermocouple, in particular one without metal layers, wherein the thermocouple comprises a first thermocouple (TE1) and wherein the thermocouple comprises a second thermocouple (TE2) and where the first thermocouple (TE1) and the second thermocouple (TE2) are connected except for one possible The doping must comprise the same material and / or be made from the same material and wherein the first thermocouple (TE1) and the second thermocouple (TE2) are connected by an electrical conductive connection electrically connected to each other and where the electrically conductive connection - an electrically conductive, in particular siliciated compound of the material of the first thermocouple (TE1) combined with another type of atom and - comprises an electrically conductive, in particular siliciated, compound of the material of the second thermocouple (TE2) supplemented with another type of atom and the material of the first thermocouple (TE1) and the second thermocouple (TE2) is polycrystalline silicon and wherein the electrically conductive compound consists of the electrically conductive compound of the material of the first thermocouple (TE1) and the second thermocouple (TE2) with other types of atoms comprising an electrically conductive silicide and wherein the electrically conductive compound consists of the electrically conductive compound of the material of the first thermocouple (TE1) and the second thermocouple (TE2) with other types of atoms comprising titanium silicide and / or tungsten silicide and / or cobalt silicide and / or nickel silicide and / or another electrically conductive silicide and where the possible doping of the first thermocouple (TE1) is of a first doping type and where the possible doping of the second thermocouple (TE2) is of a second doping type and where the first doping type is p-doping or n-doping and where the second doping type is n-doping if the first doping type is p-doping and where the second doping type is p-doping if the first doping type is n-doping and wherein the silicide electrically connects the first thermocouple (TE1) and the second thermocouple (TE2) to each other in the same layer plane of a CMOS stack as the first thermocouple (TE1) and the second thermocouple (TE2), characterized in that thermocouples of the same doping are arranged directly next to each other, and, that the connection points of the thermopile for electrical connection with other electronic components include electrically conductive silicide.

Description

generic term

[0001] The invention is directed to the realization of metal-layer-free thermocouples and metal-layer-free thermopiles in standard CMOS processes. The thermocouples and thermopiles according to the invention can be used in infrared sensors for person detection or in Halios systems for gesture recognition. Furthermore, they can be used as thermoelectric generators or as cooling elements. General introduction

[0002] The use of thermopiles in sensitive thermoelectric infrared sensors for person or motion detection is an alternative to the pyroelectric sensors often used for this purpose. The use of thermopiles is particularly advantageous when the most cost-effective production possible using a CMOS process is possible. A high degree of functional design freedom is also advantageous in this case. State of the art

[0003] Infrared sensors for detecting long-wave infrared radiation (4<λ<14 µm) based on the thermoelectric effect, also known as the Seebeck effect, are often manufactured using CMOS technology. Thermocouple production requires a material available in the CMOS process with a high Seebeck coefficient, low thermal conductivity, and low electrical resistance. To increase the thermoelectric signal, CMOS-typical materials with negative and positive Seebeck coefficients are combined in a thermocouple. Possible combinations include polysilicon / aluminum, heavily p-doped polysilicon / aluminum, n-doped polysilicon / heavily p-doped silicon, or preferably n-doped polysilicon / p-doped polysilicon. Fig. 1 to Fig. Figure 4 shows typical designs of state-of-the-art thermocouples (SdT) manufactured in a CMOS process.

[0004] The fabrication of an n-doped polysilicon / p-doped polysilicon thermocouple is realized according to the state of the art (SdT) in the CMOS process using two separate polysilicon components with different polysilicon levels and at least two different wiring levels. The necessary electrically conductive connection of the thermocouples to form a thermocouple is realized using aluminum, aluminum-silicon alloy, or aluminum-copper alloy.

[0005] Disadvantages of the described polysilicon thermocouples, which are realized using multiple polysilicon and metallization layers, include the necessary thick membrane layers of the integrated thermocouples and the resulting thick CMOS stacks. This also limits the functional design freedom within the CMOS stack. In addition, this results in high thermal mass and high thermal conductivity. This negatively impacts the sensitivity of the infrared sensor.

[0006] The prior art (SdT) is known for bonding metal and semiconductor in a standard CMOS process by silicidation with titanium atoms. Patent DE 10 2014 013 482 B4 is an example. In CMOS processes, silicidation with other metal atoms is also possible, for example, nickel atoms, tungsten atoms, or cobalt atoms.

[0007] A lateral thermopile, in whose construction silicides are used, for use in an integrated circuit is disclosed in US 9,349,933 B2. US 6,329,696 B1 discloses a thermopile whose leads and electrical connections are silicided.

[0008] From the dissertation by ASSION, Fabian: Titanium disilicide contacts for high-temperature thermoelectric generators. Paderborn: In 2015, the development of a high-temperature connection technology for thermoelectric generators was announced. For this purpose, titanium disilicide was selected as the electrical hot-side connection material in Assion's work, tested in detail, and introduced into thermoelectrics. The work presented there analyzes material properties, among other things, on several specially integrated demonstrator TEGs under ambient conditions. This includes the thermal stability of the hot-side TiSi2 connection, which was tested up to 600°C. The actual temperature stability of the titanium disilicide is 800°C due to oxidation, although 940°C is also possible with further adjustments. The specific resistance of TiSi2 within the target application is 40 µcm.This applies to the three differently doped TE materials (FeSi2, SiGe, and silicon) and to the TEGs constructed from them. The thermal expansion coefficient of TiSi2 lies exactly between that of the TE material Mg2Si and the substrate (Al2O3), thus creating an optimal bond between them. Contact resistances to different materials and the diffusion behavior of various dopants have been documented in detail based on extensive literature research and our own tests and were classified as positive or uncritical in Assion's work. In Assion's work, extensive series of tests were conducted on the production of TiSi2. It should be noted that very high-quality TiSi2 layers can be achieved with oxygen-free processing, and that the introduction of a protective layer significantly reduces this process requirement, thus significantly simplifying the overall process and making it more resistant to failure.The integration of the TEG demonstrators made of iron disilicide and silicon / germanium showed It. Assion that the TiSi2 joining technology can be fully transferred to the new materials and thus, according to Assion, is most likely also applicable to a wide variety of other materials. In Assion's work, degradation analyses using thermal shock storage did not reveal any significant effects on the TiSi2 layers, which is why It. Assion's joining technology can be considered long-term stable. Preliminary tests with thermal spray processes demonstrate, according to Assion, that TiSi2 can be deposited cost-effectively. The demonstrator TEGs thus confirm to It. Assion that all requirements for the hot-side TiSi2 connection are met. An implemented MATLAB calculation model and FEM simulations led It. Assion to a micro-TEG design, which was evaluated using simulations in Assion's work.A final look at the theoretical efficiency increase possible by switching from a currently common joining technique to the TiSi2 process presented here, according to Assion, demonstrates the potential of the described development. According to Assion, the utilization of the TiSi2 joining technique proposed in Assion's work leads to an efficiency increase for thermoelectric generators from 9% to 15%, thus resulting in an improvement of more than 60%.

[0009] For the purposes of this disclosure, silicides and similar compounds that exhibit metal-like conductivity, in which the valence and conduction bands do not overlap at room temperature, or at least at absolute zero, are not considered metals. Thus, when referring to "non-metallic," the presence of silicides or similar compounds does not result in the loss of the "non-metallic" property. Task

[0010] The proposal is therefore based on the task of electrically connecting thermocouples made of heavily n-doped and heavily p-doped polysilicon to form a thermocouple by silicidation of the polysilicon, instead of by an additional metal layer.

[0011] It is a further object of the present invention to electrically connect metal layer-free thermocouples to one another to form a thermopile by silicidating the polysilicon.

[0012] It is a further object of the present invention to improve the layout of the metal layer-free thermopile according to the invention with regard to the packing density of the thermocouples and the simplest possible production.

[0013] This object is achieved with a device according to claim 1.

[0014] It is a further object of the invention to use at least one metal layer-free thermopile according to the invention as a thermoelectric generator for providing electrical energy from thermal energy.

[0015] It is a further object of the invention to use at least one metal layer-free thermopile according to the invention as a cooling element, for example for electronic circuits.

[0016] It is a further object of the present invention to provide a testing possibility for at least one thermopile according to the invention by using a metal layer-free heating element and another metal layer-free thermoelectric sensor on the same substrate.

[0017] It is a further object of the present invention to use self-testable metal layer-free thermopiles in motor vehicles.

[0018] It is a further object of the present invention to detect persons or animals in the interior of motor vehicles by means of at least one metal layer-free thermopile according to the invention and to determine further properties of the persons or animals, e.g. elevated temperature, living or deceased.

[0019] It is a further object of the present invention to operate an array of metal-layer-free thermopiles according to the invention as an infrared camera. Such an array could be used in motor vehicles, for example, to provide additional information to improve the image of a rearview camera in the dark.

[0020] It is a further object of the present invention to use at least one metal layer-free thermopile according to the invention as a receiver in a Halios device in a Halios system for gesture recognition.

[0021] It is a further object of the present invention to realize the metal layer-free thermopile membrane-free, as a cantilever.

[0022] It is a further object of the invention to realize a silicided sensor for electromagnetic radiation on a membrane. Solution to the task

[0023] According to the invention, it was recognized that the silicidation of polycrystalline silicon—hereinafter also referred to as polysilicon—with preferably titanium for electrical connection has not yet been used in the prior art (SdT) for connecting thermocouples in CMOS technology. According to the invention, it was also recognized that this principle can also be applied to materials other than polycrystalline silicon.

[0024] In a thermopile of the type described above, the proposed solution is to electrically connect thermocouples made of n- and p-doped polysilicon by silicidating the polysilicon with titanium to form a metal-layer-free thermocouple. Instead of titanium atoms, other metal atoms, such as tungsten, cobalt, or nickel, can also be used.

[0025] The thermocouples are preferably located in the same uninterrupted polysilicon layer of the CMOS stack. The polysilicon layer is preferably between 200 nm and 300 nm thick. A portion of this layer is silicided as described. The thickness of the silicidation is preferably between 40 nm and 80 nm.

[0026] P-type doping can be achieved, for example, by implanting boron ions into the polysilicon. N-type doping can be achieved, for example, by implanting phosphorus or arsenic ions into the polysilicon. P-doped polysilicon has a positive Seebeck coefficient. N-doped polysilicon has a negative Seebeck coefficient. The electrically active thermocouple forms at the junction between the n- and p-doped polysilicon.

[0027] The thermocouples thus realized can also be electrically connected by silicidating the polysilicon with titanium, tungsten, cobalt, nickel, or another suitable metal to form a metal-layer-free thermopile. Furthermore, further electrical connections to other components or additional thermopiles can be realized by silicidating the polysilicon.

[0028] Thermopiles are also known as thermopiles or thermochains in German. A thermopile is commonly understood as an electrical component that converts thermal energy into electrical energy. It consists of several thermocouples connected thermally in parallel and electrically in series, whereby the very low thermoelectric voltages are added together to form a measurable total thermoelectric voltage.

[0029] In the following, the detailed structure of a thermocouple described above is first described using Fig. 5. A simplified representation of the structure of the proposed thermocouple is shown in Fig. 6 and in Fig. 7. In the Fig. 6, different Seebeck coefficients of the two thermocouples result from differently doped polysilicon. Fig. In the thermocouple shown in Figure 7, the different Seebeck coefficients of polysilicon and silicidation are crucial for the function of the respective thermocouple.

[0030] The proposed connection of several thermocouples to a thermopile is then demonstrated using Fig. 8. The arrangement of the individual thermocouples to form a thermopile can be designed in different ways. A particularly advantageous arrangement with regard to the packing density of the thermocouples and the manufacturing process is shown in Fig. 10 shown.

[0031] A proposed thermocouple is shown in the cross section in Fig. 5, constructed in a common first polysilicon layer (PS1). The polysilicon layer (PS1) is located on a first membrane (MEM1). The first membrane (MEM1) is made of a dielectric material, for example an oxide or a nitride. The first membrane (MEM1) can contain absorbers and / or absorber layers for infrared radiation. The first membrane (MEM1) is located on a first substrate (SUB1). The first substrate (SUB1) is preferably made of doped or undoped polysilicon. A first insulation layer (11) is located on the first polysilicon layer (PS1). Undoped material is also referred to below as undoped material.

[0032] The structure described below is achieved by etching the wafer from the front side. However, it is equally possible to realize an analogous structure by etching the wafer from the back side.

[0033] At a first distance (d1) from a first left side surface (LSF1) of the described stack, consisting of the first substrate (SUB1) and the first membrane (MEM1) and the first polysilicon layer (PS1) and the first insulation layer (I1), and at a third distance (d3) from a first rear side surface (HSF1) of the described stack, a first trench (G1) with a width (BG1) of the first trench (G1) and a length (LG1) of the first trench (G1) and a height (HG1) of the first trench (G1) from the surface of the first insulation layer (I1) into the first substrate (SUB1) is introduced.

[0034] At a second distance (d2) from a first right side surface (RSF1) of the described stack and at a fourth distance (d4) from the first rear side surface (HSF1) of the described stack, a second trench (G2) with a width (BG2) of the second trench (G2) and a length (LG2) of the second trench (G2) and a height (HG2) of the second trench (G2) from the surface of the first insulation layer (11) into the first substrate (SUB1) is introduced.

[0035] Preferably, the first distance (d1) is equal to the second distance (d2). Preferably, the third distance (d3) is equal to the fourth distance (d4). Preferably, the width (BG1) of the first trench (G1) is equal to the width (BG2) of the second trench (G2). Preferably, the length (LG1) of the first trench (G1) is equal to the length (LG2) of the second trench (G2). Preferably, the height (HG1) of the first trench (G1) is equal to the height (HG2) of the second trench (G2).

[0036] Between the first trench (G1) and the second trench (G2) a substrate-free first cavity (C1) is introduced below the first membrane (MEM1).

[0037] The substrate-free first cavity (C1) serves as thermal insulation. For this purpose, the first cavity (C1) must be filled with a material with poor thermal conductivity, such as air or gas, or vacuumed (=airless).

[0038] The first polysilicon layer (PS1) comprises, above the first cavity (C1), a first thermocouple (TE1) and a second thermocouple (TE2), as well as a second silicidation (SI2). The second silicidation (SI2) is located between the first thermocouple (TE1) and the second thermocouple (TE2). The second silicidation (SI2) electrically connects the first thermocouple (TE1) and the second thermocouple (TE2). The second silicidation (SI2) is created by silicidating the polysilicon with suitable metal atoms, preferably with titanium atoms or, for example, with tungsten atoms, cobalt atoms, nickel atoms, or atoms of another suitable metal.

[0039] The first thermocouple (TE1) consists of heavily doped polysilicon of a first doping type. The second thermocouple (TE2) consists of heavily doped polysilicon of a second doping type. The first doping type can be n-type or p-type.

[0040] The second doping type is a p-type doping if the first doping type is an n-type doping. The second doping type is an n-type doping if the first doping type is a p-type doping.

[0041] Between the first left side surface (LSF1) and the first trench (G1), the first polysilicon layer (PS1) comprises a first silicidation (SI1). Between the first right side surface (RSF1) and the second trench (G2), the first polysilicon layer (PS1) comprises a third silicidation (SI3). The first silicidation (SI1) consists of polysilicon silicided using titanium. The third silicidation (SI3) consists of polysilicon silicided using titanium. Instead of titanium atoms, other metal atoms such as cobalt and / or tungsten and / or nickel atoms can also be used. The first silicidation (SI1) and the third silicidation (SI3) are electrically conductive connection points for further thermocouples or other electronic components made of polysilicon.

[0042] In comparison to the state-of-the-art (SdT) thermocouples in CMOS technology, which are Fig. 1 to Fig. 4, the proposed structure described above results in a very flat CMOS stack. Since the thermocouples with positive and negative Seebeck coefficients and the electrically conductive connections are located in the same layer plane of the CMOS stack, this results in more functional design freedom and a simplified manufacturing process. The thermal capacitance is lower.

[0043] Fig. Figure 6 shows a highly simplified representation of a possible design of the proposed thermocouple. This simplified representation illustrates the relative arrangement of the thermocouples and silicides.

[0044] A nineteenth thermocouple (TE19) is adjacent to a twentieth thermocouple (TE20).

[0045] The nineteenth thermocouple (TE19) consists of heavily doped polysilicon of a first doping type. The twentieth thermocouple (TE20) consists of heavily doped polysilicon of a second doping type. The first doping type can be n-type or p-type. The second doping type is p-type if the first doping type is n-type. The second doping type is n-type if the first doping type is p-type.

[0046] The nineteenth thermocouple (TE19) and the twentieth thermocouple (TE20) form a pn junction.

[0047] A twentieth silicidation (SI20) extends from the surface of the nineteenth thermocouple (TE19) and the twentieth thermocouple (TE20) into the nineteenth thermocouple (TE19) and the twentieth thermocouple (TE20). However, the twentieth silicidation (SI20) does not spatially separate the nineteenth thermocouple (TE19) and the twentieth thermocouple (TE20). A pn ​​junction remains below the twentieth silicidation (SI20), which is further formed by the nineteenth thermocouple (TE19) and the twentieth thermocouple (TE20).

[0048] The twentieth silicidation (SI20) consists of polysilicon silicided using titanium atoms, for example. Silicided using other metal atoms, such as tungsten, cobalt, and / or nickel atoms, is also possible.

[0049] Fig. Figure 7 shows a highly simplified representation of another possible design of the proposed thermocouple, in which a silicidation acts as a thermocouple.

[0050] A twenty-first thermocouple (TE21) borders a twenty-second thermocouple (TE22). The twenty-first thermocouple (TE21) is made of undoped polysilicon or doped polysilicon. The twenty-second thermocouple (TE22) is made of undoped polysilicon or doped polysilicon and includes a twenty-first silicidation (SI21). The twenty-first silicidation (SI21) extends, for example, over the entire surface of the polysilicon of the twenty-second thermocouple (TE22).

[0051] For the use of the twenty-first thermocouple (TE21) and the twenty-second thermocouple (TE22), which comprises the twenty-first silicidation (SI21), as a thermocouple, the different Seebeck coefficients of the twenty-first thermocouple (TE21) and the twenty-first silicidation (SI21) are crucial. Preferably, the twenty-first thermocouple (TE21) and the twenty-second thermocouple (TE22) again form a pn diode at the junction between them. A prerequisite for the formation of such a pn diode is that the twenty-first thermocouple (TE21) consists of doped polysilicon of a first conductivity type and that the twenty-second thermocouple (TE22) consists of doped polysilicon of a second conductivity type. For example, the first conductivity type can be n-doped and the second conductivity type p-doped.

[0052] Next, the series connection of four proposed thermocouples to form a thermopile is shown using Fig. 8 explained.

[0053] A first thermocouple (TC11) of a first thermocouple (TC1) is electrically connected to a second thermocouple (TC12) of the first thermocouple (TC1) by a fourth silicide (SI4).

[0054] A first thermocouple (TC21) of a second thermocouple (TC2) is electrically connected to a second thermocouple (TC22) of the second thermocouple (TC2) by a fifth silicide (SI5).

[0055] A first thermocouple (TC31) of a third thermocouple (TC3) is electrically connected to a second thermocouple (TC32) of the third thermocouple (TC3) by a sixth silicide (SI6).

[0056] A first thermocouple (T41) of a fourth thermocouple (TC4) is electrically connected to a second thermocouple (TC42) of the fourth thermocouple (TC4) by a seventh silicide (SI7).

[0057] A first thermocouple (T51) of a fifth thermocouple (TC5) is electrically connected to a second thermocouple (TC52) of the fifth thermocouple (TC5) by an eighth silicide (SI8).

[0058] The second thermocouple (TC12) of the first thermocouple (TC1) is electrically connected to the first thermocouple (TC21) of the second thermocouple (TC2) via a ninth silicide (SI9).

[0059] The second thermocouple (TC22) of the second thermocouple (TC2) is electrically connected to the first thermocouple (TC31) of the third thermocouple (TC3) via a tenth silicide (SI10).

[0060] The second thermocouple (TC32) of the third thermocouple (TC3) is electrically connected to the first thermocouple (TC41) of the fourth thermocouple (TC4) via an eleventh silicide (SI11).

[0061] The second thermocouple (TC42) of the fourth thermocouple (TC4) is electrically connected to the first thermocouple (TC51) of the fifth thermocouple (TC5) via a twelfth silicide (SI12).

[0062] The first thermocouple (TC11) of the first thermocouple (TC1) is electrically connected to a first connection pad (P1) by a thirteenth silicide (SI13).

[0063] The second thermocouple (TC52) of the fifth thermocouple (TC5) is electrically connected to a second connection pad (P2) by a fourteenth silicide (SI14).

[0064] A temperature-dependent voltage (UT) is present between the first connection pad (P1) and the second connection pad (P2).

[0065] The first thermocouple (TC11) of the first thermocouple (TC1) and the first thermocouple (TC12) of the second thermocouple (TC2) and the first thermocouple (TC31) of the third thermocouple (TC3) and the first thermocouple (TC41) of the fourth thermocouple (TC4) and the first thermocouple (TC51) of the fifth thermocouple (TC5) are strips of heavily doped polysilicon of a first doping type. The first doping type is in the Fig. 8 is represented by vertical dashed lines. The first doping type can be p- or n-doping.

[0066] The second thermocouple (TC1) of the first thermocouple (TC1) and the second thermocouple (TC22) of the second thermocouple (TC2) and the second thermocouple (TC32) of the third thermocouple (TC3) and the second thermocouple (TC42) of the fourth thermocouple (TC4) and the second thermocouple (TC52) of the fifth thermocouple (TC5) are strips of heavily doped polysilicon of a second doping type. The first doping type is in the Fig. 8 is represented by horizontal dashed lines. The second doping type is a p-type doping if the first doping type is an n-type doping. The second doping type is an n-type doping if the first doping type is a p-type doping.

[0067] The Fig. 8 and in Fig. The arrangement of thermocouples shown in Figure 9 has the disadvantage that p-doped thermocouples and n-doped thermocouples alternate next to each other. The spacing between the individual thermocouples is therefore largely determined by the distances between n-doping and p-doping required in the production process.

[0068] Therefore, an improved arrangement of the thermocouples is proposed and demonstrated on the basis of Fig. 10 explained. Fig. Figure 10 shows an example of the improved layout of a series circuit consisting of four thermocouple series circuits to form a proposed thermopile. However, more thermocouple series circuits can also be used. A thermocouple series circuit comprises eight thermocouples connected in series. First, the individual thermocouple series circuits are described, followed by their series connection to form a thermopile, as well as the layout of the thermopile.

[0069] The first thermocouple series circuit (S1) comprises a first thermocouple (S1E1) of the first thermocouple series circuit (S1) and a second thermocouple (S1E2) of the first thermocouple series circuit (S1) and a third thermocouple (S1E3) of the first thermocouple series circuit (S1) and a fourth thermocouple (S1E4) of the first thermocouple series circuit (S1) and a fifth thermocouple (S1E5) of the first thermocouple series circuit (S1) and a sixth thermocouple (S1E6) of the first thermocouple series circuit (S1) and a seventh thermocouple (S1E7) of the first thermocouple series circuit (S1) and an eighth thermocouple (S1E8) of the first thermocouple series circuit (S1) and a first silicidation (S1S1) of the first thermocouple series circuit (S1) and a second silicidation (S1S2) of the first Thermocouple series circuit (S1) and a third silicide (S1S3) of the first thermocouple series circuit (S1) and a fourth silicide (S1S4) of the first thermocouple series circuit(S1) and a fifth silicide (S1S5) of the first thermocouple series circuit (S1) and a sixth silicide (S1S6) of the first thermocouple series circuit (S1) and a seventh silicide (S1S7) of the first thermocouple series circuit (S1).

[0070] The second thermocouple series circuit (S2) comprises a first thermocouple (S2E1) of the second thermocouple series circuit (S2) and a second thermocouple (S2E2) of the second thermocouple series circuit (S2) and a third thermocouple (S2E3) of the second thermocouple series circuit (S2) and a fourth thermocouple (S2E4) of the second thermocouple series circuit (S2) and a fifth thermocouple (S2E5) of the second thermocouple series circuit (S2) and a sixth thermocouple (S2E6) of the second thermocouple series circuit (S2) and a seventh thermocouple (S2E7) of the second thermocouple series circuit (S2) and an eighth thermocouple (S2E8) of the second thermocouple series circuit (S2) and a first silicidation (S2S1) of the second thermocouple series circuit (S2) and a second silicidation (S2S2) of the second Thermocouple series circuit (S2) and a third silicide (S2S3) of the second thermocouple series circuit (S2) and a fourth silicide (S2S4) of the secondThermocouple series circuit (S2) and a fifth silicide (S2S5) of the second thermocouple series circuit (S2) and a sixth silicide (S2S6) of the second thermocouple series circuit (S2) and a seventh silicide (S2S7) of the second thermocouple series circuit (S2).

[0071] The third thermocouple series circuit (S3) comprises a first thermocouple (S3E1) of the third thermocouple series circuit (S3) and a second thermocouple (S3E2) of the third thermocouple series circuit (S3) and a third thermocouple (S3E3) of the third thermocouple series circuit (S3) and a fourth thermocouple (S3E4) of the third thermocouple series circuit (S3) and a fifth thermocouple (S3E5) of the third thermocouple series circuit (S3) and a sixth thermocouple (S3E6) of the third thermocouple series circuit (S3) and a seventh thermocouple (S3E7) of the third thermocouple series circuit (S3) and an eighth thermocouple (S3E8) of the third thermocouple series circuit (S3) and a first silicidation (S3S1) of the third thermocouple series circuit (S3) and a second silicidation (S3S2) of the third Thermocouple series circuit (S3) and a third silicidation (S3S3) of the third thermocouple series circuit (S3) and a fourth silicidation (S3S4) of the thirdThermocouple series circuit (S3) and a fifth silicide (S3S5) of the third thermocouple series circuit (S3) and a sixth silicide (S3S6) of the third thermocouple series circuit (S3) and a seventh silicide (S3S7) of the third thermocouple series circuit (S3).

[0072] The fourth thermocouple series circuit (S4) comprises a first thermocouple (S4E1) of the fourth thermocouple series circuit (S4) and a second thermocouple (S4E2) of the fourth thermocouple series circuit (S4) and a third thermocouple (S4E3) of the fourth thermocouple series circuit (S4) and a fourth thermocouple (S4E4) of the fourth thermocouple series circuit (S4) and a fifth thermocouple (S4E5) of the fourth thermocouple series circuit (S4) and a sixth thermocouple (S4E6) of the fourth thermocouple series circuit (S4) and a seventh thermocouple (S4E7) of the fourth thermocouple series circuit (S4) and an eighth thermocouple (S4E8) of the fourth thermocouple series circuit (S4) and a first silicidation (S4S1) of the fourth thermocouple series circuit (S4) and a second silicidation (S4S2) of the fourth Thermocouple series circuit (S4) and a third silicide (S4S3) of the fourth thermocouple series circuit (S4) and a fourth silicide (S4S4) of the fourthThermocouple series circuit (S4) and a fifth silicide (S4S5) of the fourth thermocouple series circuit (S4) and a sixth silicide (S4S6) of the fourth thermocouple series circuit (S4) and a seventh silicide (S4S7) of the fourth thermocouple series circuit (S4).

[0073] The first thermocouple (S1E1) of the first thermocouple series circuit (S1) is electrically connected to the second thermocouple (S1E2) of the first thermocouple series circuit (S1) by the first silicide (S1S1) of the first thermocouple series circuit (S1). The second thermocouple (S1E2) of the first thermocouple series circuit (S1) is electrically connected to the third thermocouple (S1E3) of the first thermocouple series circuit (S1) by the second silicide (S1S2) of the first thermocouple series circuit (S1). The third thermocouple (S1E3) of the first thermocouple series circuit (S1) is electrically connected to the fourth thermocouple (S1E4) of the first thermocouple series circuit (S1) by the third silicide (S1S3) of the first thermocouple series circuit (S1).The fourth thermocouple (S1E4) of the first thermocouple series circuit (S1) is electrically connected to the fifth thermocouple (S1E5) of the first thermocouple series circuit (S1) by the fourth silicide (S1S4) of the first thermocouple series circuit (S1). The fifth thermocouple (S1E5) of the first thermocouple series circuit (S1) is electrically connected to the sixth thermocouple (S1E6) of the first thermocouple series circuit (S1) by the fifth silicide (S1S5) of the first thermocouple series circuit (S1). The sixth thermocouple (S1E6) of the first thermocouple series circuit (S1) is electrically connected to the seventh thermocouple (S1E7) of the first thermocouple series circuit (S1) by the sixth silicide (S1S6) of the first thermocouple series circuit (S1).The seventh thermocouple (S1E7) of the first thermocouple series circuit (S1) is electrically connected to the eighth thermocouple (S1E8) of the first thermocouple series circuit (S1) by the seventh silicidation (S1S7) of the first thermocouple series circuit (S1).

[0074] The first thermocouple (S2E1) of the second thermocouple series circuit (S2) is electrically connected to the second thermocouple (S2E2) of the second thermocouple series circuit (S2) by the first silicide (S2S1) of the second thermocouple series circuit (S2). The second thermocouple (S2E2) of the second thermocouple series circuit (S2) is electrically connected to the third thermocouple (S2E3) of the second thermocouple series circuit (S2) by the second silicide (S2S2) of the second thermocouple series circuit (S2). The third thermocouple (S2E3) of the second thermocouple series circuit (S2) is electrically connected to the fourth thermocouple (S2E4) of the second thermocouple series circuit (S2) by the third silicide (S2S3) of the second thermocouple series circuit (S2).The fourth thermocouple (S2E4) of the second thermocouple series circuit (S2) is electrically connected to the fifth thermocouple (S2E5) of the second thermocouple series circuit (S2) by the fourth silicide (S2S4) of the second thermocouple series circuit (S2). The fifth thermocouple (S2E5) of the second thermocouple series circuit (S2) is electrically connected to the sixth thermocouple (S2E6) of the second thermocouple series circuit (S2) by the fifth silicide (S2S5) of the second thermocouple series circuit (S2). The sixth thermocouple (S2E6) of the second thermocouple series circuit (S2) is electrically connected to the seventh thermocouple (S2E7) of the second thermocouple series circuit (S2) by the sixth silicide (S2S6) of the second thermocouple series circuit (S2).The seventh thermocouple (S2E7) of the second thermocouple series circuit (S2) is electrically connected to the eighth thermocouple (S2E8) of the second thermocouple series circuit (S2) by the seventh silicidation (S2S7) of the second thermocouple series circuit (S2).

[0075] The first thermocouple (S3E1) of the third thermocouple series circuit (S3) is electrically connected to the second thermocouple (S3E2) of the third thermocouple series circuit (S3) by the first silicide (S3S1) of the third thermocouple series circuit (S3). The second thermocouple (S3E2) of the third thermocouple series circuit (S3) is electrically connected to the third thermocouple (S3E3) of the third thermocouple series circuit (S3) by the second silicide (S3S2) of the third thermocouple series circuit (S3). The third thermocouple (S3E3) of the third thermocouple series circuit (S3) is electrically connected to the fourth thermocouple (S3E4) of the third thermocouple series circuit (S3) by the third silicide (S3S3) of the third thermocouple series circuit (S3).The fourth thermocouple (S3E4) of the third thermocouple series circuit (S3) is electrically connected to the fifth thermocouple (S3E5) of the third thermocouple series circuit (S3) by the fourth silicide (S3S4) of the third thermocouple series circuit (S3). The fifth thermocouple (S3E5) of the third thermocouple series circuit (S3) is electrically connected to the sixth thermocouple (S3E6) of the third thermocouple series circuit (S3) by the fifth silicide (S3S5) of the third thermocouple series circuit (S3). The sixth thermocouple (S3E6) of the third thermocouple series circuit (S3) is electrically connected to the seventh thermocouple (S3E7) of the third thermocouple series circuit (S3) by the sixth silicide (S3S6) of the third thermocouple series circuit (S3).The seventh thermocouple (S3E7) of the third thermocouple series circuit (S3) is electrically connected to the eighth thermocouple (S3E8) of the third thermocouple series circuit (S3) by the seventh silicidation (S3S7) of the third thermocouple series circuit (S3).

[0076] The first thermocouple (S4E1) of the fourth thermocouple series circuit (S4) is electrically connected to the second thermocouple (S4E2) of the fourth thermocouple series circuit (S4) by the first silicide (S4S1) of the fourth thermocouple series circuit (S4). The second thermocouple (S4E2) of the fourth thermocouple series circuit (S4) is electrically connected to the third thermocouple (S4E3) of the fourth thermocouple series circuit (S4) by the second silicide (S4S2) of the fourth thermocouple series circuit (S4). The third thermocouple (S4E3) of the fourth thermocouple series circuit (S4) is electrically connected to the fourth thermocouple (S4E4) of the fourth thermocouple series circuit (S4) by the third silicide (S4S3) of the fourth thermocouple series circuit (S4).The fourth thermocouple (S4E4) of the fourth thermocouple series circuit (S4) is electrically connected to the fifth thermocouple (S4E5) of the fourth thermocouple series circuit (S4) by the fourth silicide (S4S4) of the fourth thermocouple series circuit (S4). The fifth thermocouple (S4E5) of the fourth thermocouple series circuit (S4) is electrically connected to the sixth thermocouple (S4E6) of the fourth thermocouple series circuit (S4) by the fifth silicide (S4S5) of the fourth thermocouple series circuit (S4). The sixth thermocouple (S4E6) of the fourth thermocouple series circuit (S4) is electrically connected to the seventh thermocouple (S4E7) of the fourth thermocouple series circuit (S4) by the sixth silicide (S4S6) of the fourth thermocouple series circuit (S4).The seventh thermocouple (S4E7) of the fourth thermocouple series circuit (S4) is electrically connected to the eighth thermocouple (S4E8) of the fourth thermocouple series circuit (S4) by the seventh silicidation (S4S7) of the fourth thermocouple series circuit (S4).

[0077] The first thermocouple (S1E1) of the first thermocouple series circuit (S1) is electrically connected to a first connection pad (S1P1) of the first thermocouple series circuit (S1) via a fifteenth silicide (SI15). The eighth thermocouple (S4E8) of the fourth thermocouple series circuit (S4) is electrically connected to a first connection pad (S4P1) of the fourth thermocouple series circuit (S4) via a nineteenth silicide (SI19).

[0078] The eighth thermocouple (S1E8) of the first thermocouple series circuit (S1) is electrically connected to the first thermocouple (S2E1) of the second thermocouple series circuit (S2) via a sixteenth silicide (SI16). The eighth thermocouple (S2E8) of the second thermocouple series circuit (S2) is electrically connected to the first thermocouple (S3E1) of the third thermocouple series circuit (S3) via a seventeenth silicide (SI17). The eighth thermocouple (S3E8) of the third thermocouple series circuit (S3) is electrically connected to the first thermocouple (S4E1) of the fourth thermocouple series circuit (S4) via an eighteenth silicide (SI18).

[0079] The first thermocouple (S1E1) of the first thermocouple series circuit (S1) and the third thermocouple (S1E3) of the first thermocouple series circuit (S1) and the fifth thermocouple (S1E5) of the first thermocouple series circuit (S1) and the seventh thermocouple (S1E7) of the first thermocouple series circuit (S1) and the first thermocouple (S2E1) of the second thermocouple series circuit (S2) and the third thermocouple (S2E3) of the second thermocouple series circuit (S2) and the fifth thermocouple (S2E5) of the second thermocouple series circuit (S2) and the seventh thermocouple (S2E7) of the second thermocouple series circuit (S2) and the first thermocouple (S3E1) of the third thermocouple series circuit (S3) and the third thermocouple (S3E3) of the third thermocouple series circuit (S3) and the fifth thermocouple (S3E5) of the third thermocouple series circuit (S3) and the seventh thermocouple (S3E7) of the third thermocouple series circuit (S3) and the first thermocouple (S4E1) of the fourthThe thermocouple series circuit (S4) and the second thermocouple (S4E2) of the fourth thermocouple series circuit (S4) and the third thermocouple (S4E3) of the fourth thermocouple series circuit (S4) and the fourth thermocouple (S4E4) of the fourth thermocouple series circuit (S4) are made of heavily doped polysilicon of a first doping type. The first doping type is in the Fig. 10 is represented by a dotted pattern. The first doping type can be p-type or n-type.

[0080] The second thermocouple (S1E2) of the first thermocouple series circuit (S1) and the fourth thermocouple (S1E4) of the first thermocouple series circuit (S1) and the sixth thermocouple (S1E6) of the first thermocouple series circuit (S1) and the eighth thermocouple (S1E8) of the first thermocouple series circuit (S1) and the second thermocouple (S2E2) of the second thermocouple series circuit (S2) and the fourth thermocouple (S2E4) of the second thermocouple series circuit (S2) and the sixth thermocouple (S2E6) of the second thermocouple series circuit (S2) and the eighth thermocouple (S2E8) of the second thermocouple series circuit (S2) and the second thermocouple (S3E2) of the third thermocouple series circuit (S3) and the fourth thermocouple (S3E4) of the third thermocouple series circuit (S3) and the sixth thermocouple (S3E6) of the third thermocouple series circuit (S3) and the eighth thermocouple (S3E8) of the third thermocouple series circuit (S3) and the second thermocouple (S4E2) of the fourthThermocouple series circuit (S4) and the fourth thermocouple (S4E4) of the fourth thermocouple series circuit (S4) and the sixth thermocouple (S4E6) of the fourth thermocouple series circuit (S4) and the eighth thermocouple (S4E8) of the fourth thermocouple series circuit (S4) are made of heavily doped polysilicon of a second doping type. The second doping type is in the Fig. 10 is represented by non-patterned stripes. The second doping type is an n-type doping when the first doping type is a p-type doping. The second doping type is a p-type doping when the first doping type is an n-type doping.

[0081] The eighth thermocouple (S1E8) of the first thermocouple series circuit (S1) is adjacent to the first thermocouple (S1E1) of the first thermocouple series circuit (S1).

[0082] The eighth thermocouple (S2E8) of the second thermocouple series circuit (S2) is adjacent to the first thermocouple (S2E1) of the second thermocouple series circuit (S2).

[0083] The eighth thermocouple (S3E8) of the third thermocouple series circuit (S3) is adjacent to the first thermocouple (S3E1) of the third thermocouple series circuit (S3).

[0084] The first thermocouple (S4E1) of the fourth thermocouple series circuit (S4) is adjacent to the first thermocouple (S4E1) of the fourth thermocouple series circuit (S4).

[0085] The first thermocouple (S1E1) of the first thermocouple series circuit (S1) and the second thermocouple (S1E2) of the first thermocouple series circuit (S1) and the third thermocouple (S1E3) of the first thermocouple series circuit (S1) and the fourth thermocouple (S1E4) of the first thermocouple series circuit (S1) and the fifth thermocouple (S1E5) of the first thermocouple series circuit (S1) and the sixth thermocouple (S1E6) of the first thermocouple series circuit (S1) and the seventh thermocouple (S1E7) of the first thermocouple series circuit (S1) and the eighth thermocouple (S1E8) of the first thermocouple series circuit (S1) form a closed border of a surface.

[0086] The first thermocouple (S2E1) of the second thermocouple series circuit (S2) and the second thermocouple (S2E2) of the second thermocouple series circuit (S2) and the third thermocouple (S2E3) of the second thermocouple series circuit (S2) and the fourth thermocouple (S2E4) of the second thermocouple series circuit (S2) and the fifth thermocouple (S2E5) of the second thermocouple series circuit (S2) and the sixth thermocouple (S2E6) of the second thermocouple series circuit (S2) and the seventh thermocouple (S2E7) of the second thermocouple series circuit (S2) and the eighth thermocouple (S2E8) of the second thermocouple series circuit (S2) form a closed border of the area in which the first thermocouple series circuit (S1) is located.

[0087] The first thermocouple (S3E1) of the third thermocouple series circuit (S3) and the second thermocouple (S3E2) of the third thermocouple series circuit (S3) and the third thermocouple (S3E3) of the third thermocouple series circuit (S3) and the fourth thermocouple (S3E4) of the third thermocouple series circuit (S3) and the fifth thermocouple (S3E5) of the third thermocouple series circuit (S3) and the sixth thermocouple (S3E6) of the third thermocouple series circuit (S3) and the seventh thermocouple (S3E7) of the third thermocouple series circuit (S3) and the eighth thermocouple (S3E8) of the third thermocouple series circuit (S3) form a closed border of the area in which the second thermocouple series circuit (S2) is located.

[0088] The first thermocouple (S4E1) of the fourth thermocouple series circuit (S4) and the second thermocouple (S4E2) of the fourth thermocouple series circuit (S4) and the third thermocouple (S4E3) of the fourth thermocouple series circuit (S4) and the fourth thermocouple (S4E4) of the fourth thermocouple series circuit (S4) and the fifth thermocouple (S4E5) of the fourth thermocouple series circuit (S4) and the sixth thermocouple (S4E6) of the fourth thermocouple series circuit (S4) and the seventh thermocouple (S4E7) of the fourth thermocouple series circuit (S4) and the eighth thermocouple (S4E8) of the fourth thermocouple series circuit (S4) form a closed border of the area in which the third thermocouple series circuit (S3) is located.

[0089] In the improved layout, regions of the same doping type are located next to each other.

[0090] The first thermocouple (S1E1) of the first thermocouple series circuit (S1) and the first thermocouple (S2E1) of the second thermocouple series circuit (S2) and the first thermocouple (S3E1) of the third thermocouple series circuit (S3) and the first thermocouple (S4E1) of the fourth thermocouple series circuit (S4) are located next to each other.

[0091] The second thermocouple (S1E2) of the first thermocouple series circuit (S1) and the second thermocouple (S2E2) of the second thermocouple series circuit (S2) and the second thermocouple (S3E2) of the third thermocouple series circuit (S3) and the second thermocouple (S4E2) of the fourth thermocouple series circuit (S4) are located next to each other.

[0092] The third thermocouple (S1E3) of the first thermocouple series circuit (S1) and the third thermocouple (S2E3) of the second thermocouple series circuit (S2) and the third thermocouple (S3E3) of the third thermocouple series circuit (S3) and the third thermocouple (S4E3) of the fourth thermocouple series circuit (S4) are located next to each other.

[0093] The fourth thermocouple (S1E4) of the first thermocouple series circuit (S1) and the fourth thermocouple (S2E4) of the second thermocouple series circuit (S2) and the fourth thermocouple (S3E4) of the third thermocouple series circuit (S3) and the fourth thermocouple (S4E4) of the fourth thermocouple series circuit (S4) are located next to each other.

[0094] The fifth thermocouple (S1E5) of the first thermocouple series circuit (S1) and the fifth thermocouple (S2E5) of the second thermocouple series circuit (S2) and the fifth thermocouple (S3E5) of the third thermocouple series circuit (S3) and the fifth thermocouple (S4E5) of the fourth thermocouple series circuit (S4) are located next to each other.

[0095] The sixth thermocouple (S1E6) of the first thermocouple series circuit (S1) and the sixth thermocouple (S2E6) of the second thermocouple series circuit (S2) and the sixth thermocouple (S3E6) of the third thermocouple series circuit (S3) and the sixth thermocouple (S4E6) of the fourth thermocouple series circuit (S4) are located next to each other.

[0096] The seventh thermocouple (S1E7) of the first thermocouple series circuit (S1) and the seventh thermocouple (S2E7) of the second thermocouple series circuit (S2) and the seventh thermocouple (S3E7) of the third thermocouple series circuit (S3) and the seventh thermocouple (S4E7) of the fourth thermocouple series circuit (S4) are adjacent to each other.

[0097] The eighth thermocouple (S1E8) of the first thermocouple series circuit (S1) and the eighth thermocouple (S2E8) of the second thermocouple series circuit (S2) and the eighth thermocouple (S3E8) of the third thermocouple series circuit (S3) and the eighth thermocouple (S4E8) of the fourth thermocouple series circuit (S4) are located next to each other.

[0098] During the manufacturing process, larger spacings must be maintained between adjacent thermocouples of different doping types than between adjacent thermocouples of the same doping type. The improved layout allows for the arrangement of as many thermocouples of the same doping type as possible next to each other. In addition to simplifying the manufacturing process, this also increases the packing density of the thermocouples.

[0099] At least one proposed metal-layer-free thermopile can be used as a thermoelectric generator, regardless of its layout. For this purpose, a voltage must be taken from the terminals of the thermopile, and heating or cooling must be applied in the vicinity of the transitions from p- to n-doped semiconductor materials or from n- to p-doped semiconductor materials. This is demonstrated using Fig. 8 briefly explained in more detail. Here, the vertical dashes in Fig. 8 p-doped polysilicon and the horizontal dashes in Fig. 8 symbolize n-doped polysilicon.

[0100] The first thermocouple (TC11) of the first thermocouple (TC1), the first thermocouple (TC12) of the second thermocouple (TC2), the first thermocouple (TC31) of the third thermocouple (TC3), the first thermocouple (TC41) of the fourth thermocouple (TC4), and the first thermocouple (TC51) of the fifth thermocouple (TC5) are thus made of p-doped polysilicon. The second thermocouple (TC1) of the first thermocouple (TC1), the second thermocouple (TC22) of the second thermocouple (TC2), the second thermocouple (TC32) of the third thermocouple (TC3), the second thermocouple (TC42) of the fourth thermocouple (TC4), and the second thermocouple (TC52) of the fifth thermocouple (TC5) are thus made of n-doped polysilicon.

[0101] If the spatial environment of the fourth silicide (SI4) and the fifth silicide (SI5) and the sixth silicide (SI6) and the seventh silicide (SI7) and the eighth silicide (SI8) is heated, a voltage can be taken off between the first connection pad (P1) and the second connection pad (P2).

[0102] The use of at least one proposed metal-layer-free thermopile, regardless of its layout, as a cooling element is possible. For this purpose, a voltage must be applied to the terminals of the thermopile. Cooling occurs in the spatial vicinity of the transitions from p- to n-doped semiconductor materials. This is demonstrated using Fig. 8 briefly explained in more detail. Here, the vertical dashes in Fig. 8 p-doped polysilicon and the horizontal dashes in Fig. 8 symbolize n-doped polysilicon.

[0103] The first thermocouple (TC11) of the first thermocouple (TC1), the first thermocouple (TC12) of the second thermocouple (TC2), the first thermocouple (TC31) of the third thermocouple (TC3), the first thermocouple (TC41) of the fourth thermocouple (TC4), and the first thermocouple (TC51) of the fifth thermocouple (TC5) are thus made of p-doped polysilicon. The second thermocouple (TC1) of the first thermocouple (TC1), the second thermocouple (TC22) of the second thermocouple (TC2), the second thermocouple (TC32) of the third thermocouple (TC3), the second thermocouple (TC42) of the fourth thermocouple (TC4), and the second thermocouple (TC52) of the fifth thermocouple (TC5) are thus made of n-doped polysilicon.

[0104] When a voltage is applied between the first connection pad (P1) and the second connection pad (P2), cooling occurs in the spatial environment of the fourth silicide (SI4) and the fifth silicide (SI5) and the sixth silicide (SI6) and the seventh silicide (SI7) and the eighth silicide (SI8).

[0105] At least one proposed metal-layer-free thermopile, regardless of its layout, can be constructed as shown in Fig. 11 shown as an example. Fig. Figure 11 shows an example of a possible setup for a proposed test structure for up to two proposed thermopiles by comparing the temperature measured by the thermopiles to be tested with the temperature measured by another, different thermosensitive sensor structure. The individual elements of the test structure are indicated by ellipses with dashed borders. Fig. 11 highlighted for quicker understanding.

[0106] Above a sixth membrane (MEM6) is a first resistor (H1W1) of a first heating element (H1). The sixth membrane (MEM6) is made of a dielectric material. The sixth membrane (MEM6) is thermally insulated from the underlying substrate. The first resistor (H1W1) of the first heating element (H1) is made of doped or undoped polysilicon and has an electrical resistance on the order of 250 Ω / cm. 2 .

[0107] The first resistor (H1W1) of the first heating element (H1) is electrically connected to a first connection pad (H1P1) of the first heating element (H1) by a first silicidation (H1S1) of the first heating element (H1). The first resistor (H1W1) of the first heating element (H1) is electrically connected to a second connection pad (H1P2) of the first heating element (H1) by a second silicidation (H1S2) of the first heating element (H1). The first connection pad (H1P1) of the first heating element (H1) and the second connection pad (H1P2) of the first heating element (H1) are not located above the thermally insulated sixth membrane (MEM6). The first connection pad (H1P1) of the first heating element (H1) and the second connection pad (H1P2) of the first heating element (H1) are electrically connected to a voltage source or to other electronic components.

[0108] Above the sixth membrane (MEM6) is a first thermopile (TP1). The first thermopile (TP1) is constructed like the one in Fig. 9 and in Fig. 8. The structure of the first thermopile (TP1) is therefore not explained in detail here. The first thermopile (TP1) is electrically connected to a first connection pad (TP1P1) of the first thermopile (TP1). The connection is made of silicide. The first thermopile (TP1) is electrically connected to a second connection pad (TP1P2) of the first thermopile (TP1). The connection is made of silicide. The first connection pad (TP1P1) of the first thermopile (TP1) and the second connection pad (TP1P2) of the first thermopile (TP1) are not located above the thermally insulated sixth membrane (MEM6). The first connection pad (TP1P1) of the first thermopile (TP1) and the second connection pad (TP1P2) of the first thermopile (TP1) can be electrically connected to a voltmeter or to other electronic components.A first voltage (UTP1) can be applied between the first connection pad (TP1P1) of the first thermopile (TP1) and the second connection pad (TP1P2) of the first thermopile (TP1).

[0109] In Fig. 11, the first thermopile (TP1) is shown as an example on the right side of the first resistor (H1W1) of the first heating element (H1), and rotated by 90° relative to it.

[0110] Above the sixth membrane (MEM6) is a second thermopile (TP2). The second thermopile (TP2) is constructed in the same way as the one in Fig. 9 and in Fig. 8. The structure of the second thermopile (TP2) is therefore not explained in detail here. The second thermopile (TP2) is electrically connected to a first connection pad (TP2P1) of the second thermopile (TP2). The connection is made of silicide. The second thermopile (TP2) is electrically connected to a second connection pad (TP2P2) of the second thermopile (TP2). The connection is made of silicide. The first connection pad (TP2P1) of the second thermopile (TP2) and the second connection pad (TP2P2) of the second thermopile (TP2) are not located above the thermally insulated sixth membrane (MEM6). The first connection pad (TP2P1) of the second thermopile (TP2) and the second connection pad (TP2P2) of the second thermopile (TP2) can be electrically connected to a voltmeter or to other electronic components.A second voltage (UTP2) can be applied between the first connection pad (TP2P1) of the second thermopile (TP2) and the second connection pad (TP2P2) of the second thermopile (TP2).

[0111] In Fig. 11, the second thermopile (TP2) is shown as an example on the left side of the first resistor (H1W1) of the first heating element (H1) and opposite the first thermopile (TP1).

[0112] The proposed test structure includes a further, different thermosensitive sensor structure for determining the temperature set by the first heating element (H1). For this purpose, a series connection of four pn or pin diodes is used, for example.

[0113] Above the sixth membrane (MEM6) is a first control element (K1). The first control element (K1) comprises a series circuit of a first diode (K1D1) of the first control element (K1), a second diode (K1D2) of the first control element (K1), a third diode (K1D3) of the first control element (K1), and a fourth diode (K1D4) of the first control element (K1).

[0114] The first diode (K1D1) of the first control element (K1) and the second diode (K1D2) of the first control element (K1) and the third diode (K1D3) of the first control element (K1) and the fourth diode (K1D4) of the first control element (K1) are pn diodes or pin diodes made of polysilicon.

[0115] The first diode (K1D1) of the first control element (K1) is electrically connected to a first connection pad (K1P1) of the first control element (K1) by a first silicidation (K1S1) of the first control element (K1). The fourth diode (K1D4) of the first control element (K1) is electrically connected to a second connection pad (K1P2) of the first control element (K1) by a second silicidation (K1S2) of the first control element (K1).

[0116] The first connection pad (K1P1) of the first control element (K1) and the second connection pad (K1P2) of the first control element (K1) can be electrically connected to a voltmeter or to other electronic components. A third voltage (UK) can be applied between the first connection pad (K1P1) of the first control element (K1) and the second connection pad (K1P2) of the first control element (K1).

[0117] The first control element (K1) is in Fig. 11 opposite the first resistor (H1W1) of the first heating element (H1). However, a different positioning of the first control element (K1) and the first thermopile (TP1) and the first resistor (H1W1) of the first heating element (H1) and the second thermopile (TP2) relative to each other would also be possible.

[0118] By adjusting the adjustable voltage (UH) between the first connection pad (H1P1) of the first heating element (H1) and the second connection pad (H1P2) of the first heating element (H1), a current through the first resistor (H1W1) of the first heating element (H1) is adjusted. The thermal power loss in the first resistor (H1W1) of the first heating element (H1) leads to a temperature in the area of ​​the first resistor (H1W1) of the first heating element (H1) that can be adjusted via the adjustable voltage (UH). Due to this heating, the first voltage (UTP1), the second voltage (UTP2), and the third voltage (UK) are different from zero.

[0119] The functionality of the first thermopile (TP1) and the functionality of the second thermopile (TP2) can now be checked by comparing the first voltage (UTP1) and the second voltage (UTP2) with the third voltage (UK).

[0120] At least one proposed metal-layer-free thermopile can be used in the interior of motor vehicles, regardless of its layout. The thermopile can also be self-testing. For this purpose, a metal-layer-free heating element should be implemented on the same substrate, as described above. One possible application of the proposed metal-layer-free thermopile in the interior of motor vehicles is, for example, in an infrared sensor. This can be used for person detection. The infrared sensor can determine the surface temperature of people in the vehicle interior. It is therefore possible to detect elevated temperature, or fever, in the driver and issue a corresponding warning. Furthermore, the surface temperature can be used to distinguish between dead and living organisms.If children or pets are left in the vehicle with the vehicle locked from the outside, the system can also detect impending overheating by measuring the vehicle's body surface temperature, and initiate appropriate measures to rescue the child or pet. For example, the vehicle could unlock and alert the surrounding area with an alarm. The driver could be notified of the impending overheating via a message automatically sent to their mobile device.

[0121] Furthermore, at least two proposed metal-layer-free thermopiles can be arranged, regardless of their layout, to form a one- or two-dimensional thermopile array. The thermopiles of the proposed thermopile array are electrically connected to each other by silicidation. Such a proposed thermopile array can be used as a sensor in an infrared camera. Such an infrared camera can be used, for example, in motor vehicles to improve the image information of an exterior camera in the dark.

[0122] At least one proposed thermopile can be used in an infrared sensor used as a receiver in a Halios device. A Halios system comprising at least one Halios device is known in the prior art (SdT). Reference is made, for example, to DE 10 2015 015 389 A1, DE 10 2017 100 308 B3, EP 1913420 B1. A Halios system can be used for gesture recognition. In the following, a Halios device corresponding to the prior art (SdT) is described with reference to Fig. 12. The description is based on the description given in DE 10 2015 015 389 A1.

[0123] Fig. Figure 12 shows a Halios device according to the state of the art (SdT). Here, a proposed thermopile can be used as a receiver. A Halios system consists of at least one Fig. Halios device shown in Figure 12.

[0124] An infrared LED is used as a transmitter (H). The transmitter (H) emits an optical transmission signal (OS1). A transmission signal (S5) is generated by a generator (G). The transmission signal (S5) modulates the amplitude of the transmitter (H) and thus the amplitude of the optical transmission signal (OS1). The optical transmission signal (OS1) is reflected and transmitted by an object (O) to be detected.

[0125] A reflected optical transmission signal (OS3) is received by a receiver (D). The receiver (D) can comprise at least one proposed thermopile. The receiver (D) converts the reflected optical transmission signal (OS3) into a reception signal (S0). The reception signal (S0) is amplified by a preamplifier (V) to an amplified reception signal (S01). The amplified reception signal (S01) and the transmission signal (S5) are multiplied by a first multiplier (MP1) to form a multiplied reception signal (S9). The multiplied reception signal (S9) is filtered in a filter (F) to form a filter output signal (S10). The filter (F) can be a low-pass or bandpass filter. The filter output signal (S10) is amplified by a post-amplifier (VN) to form an amplified filter output signal (S14). The amplified output signal (S14) can be tapped from the device shown.Within the device, the amplified filter output signal (S14) is multiplied by the inverted transmit signal (S5) at a third multiplier (MP3) to produce a compensation feed bias signal (S6). The transmit signal (S5) is inverted by multiplying it by "-1" at a second multiplier (MP2).

[0126] The compensation supply pre-signal (S6) is summed at a summer (A) with an offset (B) to form a compensation supply signal (S7). The addition of the offset (B) guarantees a positive value range for the compensation signal (S7). The compensation supply signal (S7) controls a compensation transmitter (K). The compensation transmitter (K) is an infrared LED. The compensation transmitter (K) emits an optical compensation signal (OS2). The optical compensation signal (OS2) is also received by the receiver (D) and superimposed with the reflected optical transmission signal (OS3). A) Construction of a metal-layer-free thermopile from metal-layer-free thermocouples

[0127] A proposed thermocouple comprises a first substrate (SUB1), a first membrane (MEM1), a first polysilicon layer (PS1), a first insulation layer (11), a first cavity (C1), a first trench (G1), a second trench (G2), a first thermocouple (TE1), a second thermocouple (TE2), a first silicidation (SI1), a second silicidation (SI2) and a third silicidation (SI3).

[0128] The first substrate (SUB1) is preferably made of a doped or undoped semiconductor material. It is preferably a piece of a silicon wafer. It can also be made of polysilicon.

[0129] The first cavity (C1) is formed in the first substrate (SUB1). The first cavity (C1) is made of a material with poor thermal conductivity, preferably air, or is vacuum-sealed.

[0130] The first membrane (MEM1) lies on the first substrate (SUB1) and is located above the first cavity (C1). The first membrane (MEM1) is made of a dielectric material, such as an oxide or a nitride. The first membrane (MEM1) can also contain absorbers and / or absorber layers for infrared radiation. The absorption capacity can be achieved through the material itself or through micro- or nanostructuring.

[0131] The first polysilicon layer (PS1) lies on the first membrane (MEM1), and the first insulation layer (11) lies on the first polysilicon layer (PS1). The first trench (G1) extends from the surface of the first insulation layer (11) into the first substrate (SUB1). The second trench (G2) extends from the surface of the first insulation layer (I1) into the first substrate (SUB1). The first cavity (C1) borders the first trench (G1) and the second trench (G2).

[0132] The first polysilicon layer (PS1) comprises the first thermocouple (TE1), the second thermocouple (TE2), the first silicidation (SI1), the second silicidation (SI2) and the third silicidation (SI3).

[0133] The first thermocouple (TE1), the second thermocouple (TE2), and the second silicide layer (SI2) are located above the first cavity (C1). The second silicide layer (SI2) is located between the first thermocouple (TE1) and the second thermocouple (TE2). The second silicide layer (SI2) electrically connects the first thermocouple (TE1) and the second thermocouple (TE2).

[0134] The first silicide layer (SI1), the second silicide layer (SI2), and the third silicide layer (SI3) are made of polysilicon silicided, for example, using titanium. The first silicide layer (SI1) and the third silicide layer (SI3) are connection points for additional thermocouples or electronic components made of polysilicon.

[0135] The first thermocouple (TE1) is made of heavily doped polysilicon of a first doping type. The second thermocouple (TE2) is made of heavily doped polysilicon of a second doping type. The first doping type can be p-type or n-type. The second doping type is p-type if the first doping type is n-type. The second doping type is n-type if the first doping type is p-type.

[0136] A proposed thermopile comprises at least one thermocouple as described above.

[0137] In a proposed thermopile comprising at least two thermocouples, at least two thermocouples are electrically connected to each other by silicidation.

[0138] The connection points of a proposed thermopile for electrical connection to other electronic components or additional thermopiles are made of silicide. B) Structure of a silicided thermopile

[0139] A proposed silicided thermopile comprises at least one metal-layer-free thermocouple. The metal-layer-free thermocouple comprises a first thermocouple (TE1) and a second thermocouple (TE2).

[0140] The first thermocouple (TE1) and the second thermocouple (TE2) are made of the same material, except for any possible doping. The first thermocouple (TE1) and the second thermocouple (TE2) are electrically connected to one another by an electrically conductive connection. The electrically conductive connection consists of the electrically conductive connection of the material of the first thermocouple (TE1) and the electrically conductive connection of the material of the second thermocouple (TE2), each mixed with other types of atoms, in particular metal atoms, for example titanium atoms and / or tungsten atoms and / or cobalt atoms and / or nickel atoms and / or other suitable metal atoms.

[0141] Preferably, the material of the first thermocouple (TE1) and the second thermocouple (TE2) is polycrystalline silicon. Consequently, the electrically conductive compound formed by the electrically conductive compound of the material of the first thermocouple (TE1) and the second thermocouple (TE2) with other atom types is a silicide.

[0142] Preferably, the electrically conductive connection is formed by the electrically conductive connection of the material of the first thermocouple (TE1) and the second thermocouple (TE2) with other atom types of titanium silicide and / or tungsten silicide and / or cobalt silicide and / or nickel silicide and / or another electrically conductive metal silicide. It is conceivable to realize parallel electrical connections made of different silicides in the same polycrystalline silicon by implanting different metal atoms, such as titanium and / or tungsten and / or cobalt and / or nickel atoms and / or other suitable metal atoms, at different depths into the polycrystalline silicon.

[0143] Preferably, the first thermocouple (TE1) and the second thermocouple (TE2) are located in the same layer plane of the CMOS stack. The electrically conductive connecting silicide is located in the same layer plane of the CMOS stack as the first thermocouple (TE1) and the second thermocouple (TE2).

[0144] The first thermocouple (TE1) is made of heavily doped polysilicon of a first doping type. The second thermocouple (TE2) is made of heavily doped polysilicon of a second doping type. The first doping type can be a p-doping or an n-doping. The second doping type is a p-type doping if the first doping type is an n-type doping. The second doping type is an n-type doping if the first doping type is a p-type doping.

[0145] Doping of the first thermocouple (TE1) and the second thermocouple (TE2) with different doping types can be omitted if either the surface of the first thermocouple (TE1) or the surface of the second thermocouple (TE2) is completely silicided.

[0146] The connection points of the proposed silicided thermopile for electrical connection to other electronic components or additional thermopiles are made of silicide. C) Construction of a metal-layer-free thermocouple

[0147] A proposed thermocouple is metal layer-free.

[0148] A thermopile can be realized with at least one proposed metal-layer-free thermocouple.

[0149] A proposed metal-layer-free thermocouple comprises a first thermocouple (TE1) and a second thermocouple (TE2). The first thermocouple (TE1) and the second thermocouple (TE2) are made of the same material except for their respective doping. The first thermocouple (TE1) and the second thermocouple (TE2) are electrically connected to one another via an electrically conductive connection. The electrically conductive connection consists of the electrically conductive connection of the material of the first thermocouple (TE1) and the electrically conductive connection of the material of the second thermocouple (TE2), each intermixed with other types of atoms, in particular metal atoms, for example titanium atoms and / or tungsten atoms and / or cobalt atoms and / or nickel atoms.

[0150] Preferably, the material of the first thermocouple (TE1) and the second thermocouple (TE2) is polycrystalline silicon. Preferably, the conductive compound formed by the electrically conductive compound of the material of the first thermocouple (TE1) and the second thermocouple (TE2) with other atom types is a silicide.

[0151] Preferably, the conductive connection consists of the electrically conductive connection of the material of the first thermocouple (TE1) and the second thermocouple (TE2) with other types of atoms to form titanium silicide and / or tungsten silicide and / or cobalt silicide and / or nickel silicide and / or another electrically conductive metal silicide.

[0152] The first thermocouple (TE1) is made of heavily doped polysilicon of a first doping type. The second thermocouple (TE2) is made of heavily doped polysilicon of a second doping type. The first doping type can be a p-doping or an n-doping. The second doping type is a p-type doping if the first doping type is an n-type doping. The second doping type is an n-type doping if the first doping type is a p-type doping.

[0153] Doping of the first thermocouple (TE1) and the second thermocouple (TE2) with different doping types can be omitted if either the surface of the first thermocouple (TE1) or the surface of the second thermocouple (TE2) is completely silicided.

[0154] The connection points of the proposed silicided thermopile for electrical connection to other electronic components or additional thermopiles are made of silicide. D) Structure of a non-metallic thermocouple

[0155] A proposed thermocouple is non-metallic within the meaning of this disclosure.

[0156] A thermopile can be realized with at least one non-metallic thermocouple as proposed. Preferably, more than one thermocouple is used.

[0157] A proposed metal-layer-free, thus non-metallic, thermocouple within the meaning of this disclosure comprises a first thermocouple (TE1) and a second thermocouple (TE2). The first thermocouple (TE1) and the second thermocouple (TE2) are made of the same material except for their respective doping. The first thermocouple (TE1) and the second thermocouple (TE2) are electrically connected to one another via an electrically conductive connection. The electrically conductive connection consists of the electrically conductive connection of the material of the first thermocouple (TE1) and the electrically conductive connection of the material of the second thermocouple (TE2), each intermixed with other types of atoms, in particular metal atoms, for example titanium atoms and / or tungsten atoms and / or cobalt atoms and / or nickel atoms.

[0158] Preferably, the material of the first thermocouple (TE1) and the second thermocouple (TE2) is polycrystalline silicon. Preferably, the conductive compound formed by the electrically conductive compound of the material of the first thermocouple (TE1) and the second thermocouple (TE2) with other atom types is a silicide.

[0159] Preferably, the conductive connection consists of the electrically conductive connection of the material of the first thermocouple (TE1) and the second thermocouple (TE2) with other types of atoms to form titanium silicide and / or tungsten silicide and / or cobalt silicide and / or nickel silicide and / or another electrically conductive metal silicide.

[0160] The first thermocouple (TE1) is made of heavily doped polysilicon of a first doping type. The second thermocouple (TE2) is made of heavily doped polysilicon of a second doping type. The first doping type can be a p-doping or an n-doping. The second doping type is a p-type doping if the first doping type is an n-type doping. The second doping type is an n-type doping if the first doping type is a p-type doping.

[0161] Doping of the first thermocouple (TE1) and the second thermocouple (TE2) with different doping types can be omitted if either the surface of the first thermocouple (TE1) or the surface of the second thermocouple (TE2) is completely silicided.

[0162] The connection points of the proposed silicided thermopile for electrical connection to other electronic components or further thermopiles are preferably also made of silicide. E) Improved layout of a metal-layer-free thermopile

[0163] Another proposed silicided thermopile comprises at least one metal layer-free thermocouple.

[0164] If semiconductor materials other than polycrystalline silicon—also called polysilicon—are used, their compound with the corresponding metal is used here instead of the silicide. The compounds of such other polycrystalline or amorphous semiconductor materials with metals to form substances that are functionally similar to silicides are also encompassed by the claims. Thus, when reference is made to silicide in this disclosure, the compounds of such semiconductor materials with metals are also encompassed by the claims if they result in materials that are functionally similar to silicides, and the claims or description mention silicide or silicidation. When reference is made to silicides, this refers to intermetallic compounds with metallic or metal-like conductivity at room temperature.

[0165] The metal-layer-free thermocouple comprises a first thermocouple (TE1) and a second thermocouple (TE2). The first thermocouple (TE1) and the second thermocouple (TE2) are made of the same material except for any possible doping. The first thermocouple (TE1) and the second thermocouple (TE2) are electrically connected to one another by an electrically conductive connection. The electrically conductive connection consists of the electrically conductive connection of the material of the first thermocouple (TE1) and the electrically conductive connection of the material of the second thermocouple (TE2), each mixed with other types of atoms, in particular metal atoms, for example titanium atoms and / or tungsten atoms and / or cobalt atoms and / or nickel atoms.

[0166] Preferably, the material of the first thermocouple (TE1) and the second thermocouple (TE2) is polycrystalline silicon. Consequently, the electrically conductive compound formed by the electrically conductive compound of the material of the first thermocouple (TE1) and the second thermocouple (TE2) with other atom types is a silicide.

[0167] Preferably, the electrically conductive connection consists of the electrically conductive connection of the material of the first thermocouple (TE1) and the second thermocouple (TE2) with other atom types, such as titanium silicide and / or tungsten silicide and / or cobalt silicide and / or nickel silicide and / or an electrically conductive silicide of another metal. However, other metal atoms are also conceivable and are encompassed by the claims regarding silicidation, provided that they result in functionally similar structures.

[0168] Preferably, the first thermocouple (TE1) and the second thermocouple (TE2) are located in the same layer plane of the CMOS stack. The electrically conductive connecting silicide is located in the same layer plane of the CMOS stack as the first thermocouple (TE1) and the second thermocouple (TE2).

[0169] The first thermocouple (TE1) is made of heavily doped polysilicon of a first doping type. The second thermocouple (TE2) is made of heavily doped polysilicon of a second doping type.

[0170] The first doping type can be a p-doping or an n-doping. The second doping type is a p-type doping if the first doping type is an n-type doping. The second doping type is an n-type doping if the first doping type is a p-type doping.

[0171] Doping of the first thermocouple (TE1) and the second thermocouple (TE2) with different doping types can be omitted if either the surface of the first thermocouple (TE1) or the surface of the second thermocouple (TE2) is completely silicided.

[0172] The connection points of the proposed silicided thermopile for electrical connection to other electronic components or additional thermopiles are made of silicide.

[0173] Thermocouples of the same doping are arranged directly next to each other. F) Use of a metal layer-free thermopile as a thermoelectric generator

[0174] The invention also relates to the use of a metal-layer-free thermopile as a thermoelectric generator. The thermopile comprises at least one metal-layer-free thermocouple. The thermocouple comprises a first thermoelement (TE1) and a second thermoelement (TE2).

[0175] The first thermocouple (TE1) and the second thermocouple (TE2) are made of the same material except for the doping.

[0176] The first thermocouple (TE1) and the second thermocouple (TE2) are electrically connected to each other via an electrically conductive connection. The electrically conductive connection consists of the electrically conductive connection of the material of the first thermocouple (TE1) and the electrically conductive connection of the material of the second thermocouple (TE2), each interspersed with additional types of atoms, in particular metal atoms, for example titanium atoms and / or tungsten atoms and / or cobalt atoms and / or nickel atoms.

[0177] The material of the first thermocouple (TE1) and the second thermocouple (TE2) is preferably polycrystalline silicon.

[0178] Other polycrystalline or amorphous semiconductor materials are conceivable. When polycrystalline silicon is mentioned in this disclosure, such semiconductor materials are encompassed by the claims if they lead to functionally similar functional elements and polycrystalline silicon is mentioned in the claims or in the description.

[0179] The conductive compound consisting of the electrically conductive compound of the material of the first thermocouple (TE1) and the second thermocouple (TE2) with other types of atoms is a silicide.

[0180] If other semiconductor materials are used, their compound with the corresponding metal is used here instead of the silicide. The compounds of such other polycrystalline or amorphous semiconductor materials with metals to form substances that are functionally similar to silicides are also encompassed by the claims. Thus, when reference is made to silicide in this disclosure, the compounds of such semiconductor materials with metals are also encompassed by the claims if they result in materials that are functionally similar to silicides, and the claims or description mention silicide or silicidation.

[0181] Preferably, the conductive connection consisting of the electrically conductive connection of the material of the first thermocouple (TE1) and the second thermocouple (TE2) with further types of atoms is titanium silicide and / or tungsten silicide and / or cobalt silicide and / or nickel silicide and / or an electrically conductive silicide of another metal.

[0182] The possible doping of the first thermocouple (TE1) is of a first doping type. The possible doping of the second thermocouple (TE2) is of a second doping type. The first doping type is a p-doping or an n-doping. The second doping type is an n-type doping if the first doping type is a p-type doping. The second doping type is a p-type doping if the first doping type is an n-type doping.

[0183] Doping of the first thermocouple (TE1) and the second thermocouple (TE2) with different doping types can be omitted if either the surface of the first thermocouple (TE1) or the surface of the second thermocouple (TE2) is completely silicided.

[0184] The thermopile is partially located above a cavity in the substrate. The cavity is filled with a poorly thermally conductive material, preferably air, vacuum, or silicon-germanium.

[0185] The thermopile can be used as a thermoelectric generator. G) Use of a metal layer-free thermopile as a cooling element

[0186] The invention also relates to the use of a metal-layer-free thermopile as a cooling element. The thermopile comprises at least one metal-layer-free thermocouple.

[0187] The thermocouple comprises a first thermocouple (TE1) and a second thermocouple (TE2).

[0188] The first thermocouple (TE1) and the second thermocouple (TE2) are made of the same material except for the doping.

[0189] The first thermocouple (TE1) and the second thermocouple (TE2) are electrically connected to each other via an electrically conductive connection. The electrically conductive connection consists of the electrically conductive connection of the material of the first thermocouple (TE1) and the electrically conductive connection of the material of the second thermocouple (TE2), each interspersed with other types of atoms, in particular metal atoms, for example, titanium atoms and / or tungsten atoms and / or cobalt atoms and / or nickel atoms.

[0190] The material of the first thermocouple (TE1) and the second thermocouple (TE2) is polycrystalline silicon.

[0191] The conductive compound consisting of the electrically conductive compound of the material of the first thermocouple (TE1) and the second thermocouple (TE2) with other types of atoms is a silicide.

[0192] Preferably, the conductive compound consisting of the electrically conductive compound of the material of the first thermocouple (TE1) and the second thermocouple (TE2) with other types of atoms is titanium silicide or tungsten silicide or cobalt silicide or nickel silicide and / or an electrically conductive silicide of another metal.

[0193] The possible doping of the first thermocouple (TE1) is of a first doping type. The possible doping of the second thermocouple (TE2) is of a second doping type. The first doping type is a p-doping or an n-doping. The second doping type is an n-doping if the first doping type is a p-doping. The second doping type is a p-doping if the first doping type is an n-doping.

[0194] Doping of the first thermocouple (TE1) and the second thermocouple (TE2) with different doping types can be omitted if either the surface of the first thermocouple (TE1) or the surface of the second thermocouple (TE2) is completely silicided.

[0195] The thermopile is partially located above a cavity in the substrate. The cavity is filled with a poorly thermally conductive material, preferably air, vacuum, or silicon-germanium.

[0196] A voltage can be applied to the thermopile's terminals to generate a current flow through the thermopile. The thermopile can be used as a cooling element. H) Device and method for testing at least one silicided thermopile in detail

[0197] The invention also relates to a device and a method for testing at least one silicided thermopile. The device comprises a first thermopile (TP1) and a second thermopile (TP2), a first heating element (H1), and a first control element (K1).

[0198] The first thermopile (TP1) comprises at least one thermocouple. The first thermopile (TP1) contains no metal layers. Electrical connections are realized by silicidation, for example, using titanium and / or tungsten and / or cobalt and / or nickel and / or another metal. The first thermopile (TP1) is electrically connected to a first connection pad (TP1P1) of the first thermopile (TP1) by silicidation. The first thermopile (TP1) is electrically connected to a second connection pad (TP1P2) of the first thermopile (TP1) by silicidation.

[0199] The second thermopile (TP2) comprises at least one thermocouple. The second thermopile (TP2) does not contain any metal layers. Electrical connections are realized by silicidation, for example, using titanium and / or tungsten and / or cobalt and / or nickel and / or another metal. The second thermopile (TP2) is electrically connected to a first connection pad (TP2P1) of the second thermopile (TP2) by silicidation. The second thermopile (TP2) is electrically connected to a second connection pad (TP2P2) of the second thermopile (TP2) by silicidation.

[0200] The first heating element (H1) comprises a first resistor (H1W1) of the first heating element (H1) made of polycrystalline silicon, also called polysilicon.

[0201] The first resistor (H1W1) of the first heating element (H1) is electrically connected to a first connection pad (H1P1) of the first heating element (H1) by a first silicidation (H1S1) of the first heating element (H1).

[0202] The first resistor (H1W1) of the first heating element (H1) is electrically connected to a second connection pad (H1P2) of the first heating element (H1) by a second silicidation (H1S2) of the first heating element (H1).

[0203] An adjustable voltage (UH) can be applied between the first connection pad (H1P1) of the first heating element (H1) and the second connection pad (H1P2) of the first heating element (H1).

[0204] The first control element (K1) preferably comprises a series circuit of a first diode (K1D1) of the first control element (K1) and a second diode (K1D2) of the first control element (K1) and a third diode (K1D3) of the first control element (K1) and a fourth diode (K1D4) of the first control element (K1).

[0205] The first diode (K1D1) of the first control element (K1) and the second diode (K1D2) of the first control element (K1) and the third diode (K1D3) of the first control element (K1) and the fourth diode (K1D4) of the first control element (K1) are preferably pn diodes or pin diodes made of polysilicon.

[0206] The first diode (K1D1) of the first control element (K1) is electrically connected to a first connection pad (K1P1) of the first control element (K1) by a first silicidation (K1S1) of the first control element (K1).

[0207] The fourth diode (K1D4) of the first control element (K1) is electrically connected to a second connection pad (K1P2) of the first control element (K1) by a second silicidation (K1S2) of the first control element (K1).

[0208] The first thermopile (TP1) and the second thermopile (TP2) can be connected in series to form a thermopile.

[0209] Preferably, the first thermopile (TP1) and the second thermopile (TP2) are arranged opposite each other.

[0210] Preferably, the first heating element (H1) and the first control element (K1) are arranged opposite each other.

[0211] Preferably, the straight line on which the first thermopile (TP1) and the second thermopile (TP2) are arranged intersects the straight line on which the first heating element (H1) and the first control element (K1) are arranged orthogonally.

[0212] The method for testing at least one thermopile is based on the device described above.

[0213] An adjustable voltage (UH) is applied between the first connection pad (H1P1) of the first heating element (H1) and the second connection pad (H1P2) of the first heating element (H1).

[0214] The thermal power loss in the first resistor (H1W1) of the first heating element (H1) causes a temperature increase at the first resistor (H1W1) of the first heating element (H1).

[0215] The first heating element (H1) is thermally coupled to the first thermopile (TP1).

[0216] A first voltage (UTP1) is therefore measured between the first connection pad (TP1P1) of the first thermopile (TP1) and the second connection pad (TP1P2) of the first thermopile (TP1).

[0217] A second voltage (UTP2) is thus measured between the first connection pad (TP2P1) of the second thermopile (TP2) and the second connection pad (TP2P2) of the second thermopile (TP2).

[0218] A third voltage (UK) is measured between the first connection pad (K1P1) of the first control element (K1) and the second connection pad (K1P2) of the first control element (K1).

[0219] The first voltage (UTP1) and the second voltage (UTP2) and the third voltage (UK) depend on the temperature increase at the first resistor (H1W1) of the first heating element (H1).

[0220] The functionality of the first thermopile (TP1) and the second thermopile (TP2) is checked by comparing the first voltage (UTP1) and the second voltage (UTP2) with the third voltage (UK).

[0221] For example, if the difference between the magnitude of the first voltage (UP1) and the magnitude of the third voltage (UK) is less than a specified threshold, the first thermopile (TP1) is considered functional. If, for example, the difference between the magnitude of the first voltage (UP1) and the magnitude of the third voltage (UK) is greater than the specified threshold, the first thermopile (TP1) is considered non-functional.

[0222] For example, if the difference between the magnitude of the second voltage (UP2) and the magnitude of the third voltage (UK) is less than the specified threshold, the second thermopile (TP2) is considered functional. If, for example, the difference between the magnitude of the second voltage (UP2) and the magnitude of the third voltage (UK) is greater than the specified threshold, the second thermopile (TP2) is considered non-functional.

[0223] For example, if the difference between the magnitude of the first voltage (UP1) and the magnitude of the second voltage (UP2) is smaller than the specified threshold, the first thermopile (TP1) and the second thermopile (TP2) are considered functional. If, for example, the difference between the magnitude of the first voltage (UP1) and the magnitude of the second voltage (UP2) is greater than the specified threshold, the first thermopile (TP1) and / or the second thermopile (TP2) are considered non-functional.

[0224] Typically, the assessments are handled in such a way that a rating of “non-functional” results in an overall rating of the thermopile array as non-functional. I) Device and method for testing at least one thermopile in general

[0225] The invention relates to a device and a method for testing at least one silicided thermopile. The device for testing at least one thermopile comprises a first thermopile (TP1), a first heating element (H1), and a first control element (K1).

[0226] Preferably, both the first thermopile and the first heating element (H1) are non-metallic and preferably made of a semiconductor material, for example polycrystalline silicon with optionally locally silicided functional elements.

[0227] The first thermopile (TP1) thus comprises at least one metal-layer-free thermocouple. This means that this thermocouple is not metallic within the meaning of this disclosure.

[0228] The first control element (K1) comprises at least one further, metal-layer-free, thermosensitive sensor structure. This means that the control element (K1) is not metallic within the meaning of this disclosure.

[0229] The first heating element (H1) comprises a first resistor (H1W1) of the first heating element (H1) that is free of metal layers. This means that this first resistor (H1W1) is not metallic within the meaning of this disclosure.

[0230] The first thermopile (TP1) and the first heating element (H1) and the first control element (K1) are preferably arranged as close to each other as possible to enable good thermal coupling.

[0231] The method for testing at least one silicided thermopile is based on the proposed device described above. The temperature increase resulting from thermal power dissipation in the first resistor (H1W1) of the first heating element (H1) is adjusted by applying an adjustable voltage (UH) to the first resistor (H1W1) of the first heating element (H1).

[0232] A first voltage (UTP1) is measured at the first thermopile (TP1).

[0233] A third voltage (UK) is measured at the first control element (K1).

[0234] The first voltage (UTP1) and the third voltage (UK) depend on the temperature increase at the first resistor (H1W1) of the first heating element (H1).

[0235] The functionality of the first thermopile (TP1) is checked by comparing the first voltage (UTP1) with the third voltage (UK).

[0236] For example, if the difference between the magnitude of the first voltage (UP1) and the magnitude of the third voltage (UK) is less than a specified threshold, the first thermopile (TP1) is considered functional. If, for example, the difference between the magnitude of the first voltage (UP1) and the magnitude of the third voltage (UK) is greater than the specified threshold, the first thermopile (TP1) is considered non-functional.

[0237] In the simplest case, the method for testing at least one thermopile is carried out using a device that comprises only one heating element and one thermopile. The temperature increase caused by thermal power loss in the first resistor (H1W1) of the first heating element (H1) is then adjusted at the first resistor (H1W1) of the first heating element (H1) by applying the adjustable voltage (UH) between the first connection pad (H1P1) of the first heating element (H1) and the second connection pad (H1P2) of the first heating element (H1). A first voltage (UTP1) is then measured again between the first connection pad (TP1P1) of the first thermopile (TP1) and the second connection pad (TP1P2) of the first thermopile (TP1). The first voltage (UTP1) is then dependent on the temperature increase at the first resistor (H1W1) of the first heating element (H1).The functionality of the first thermopile (TP1) is then checked by comparing the first voltage (UTP1) with a predefined, set or programmed setpoint. J) Motor vehicle with at least one self-testable metal-layer-free thermopile

[0238] The invention also relates to a device and a method for testing at least one metal-layer-free thermopile in motor vehicles. The proposed device comprises a first thermopile (TP1), a first heating element (H1), and a first control element (K1).

[0239] The first thermopile (TP1) and the first heating element (H1) and the first control element (K1) are preferably free of metal layers.

[0240] The first thermopile (TP1) comprises at least one metal layer-free thermocouple.

[0241] The first control element (K1) comprises at least one further different thermosensitive sensor structure.

[0242] The first heating element (H1) comprises a first resistor (H1W1) of the first heating element (H1).

[0243] The first thermopile (TP1) and the first heating element (H1) and the first control element (K1) are preferably arranged as close to each other as possible in order to ensure good thermal coupling.

[0244] The method for testing at least one metal layer-free thermopile is based on the proposed device described above.

[0245] The temperature increase resulting from thermal power loss in the first resistor (H1W1) of the first heating element (H1) is adjusted by applying an adjustable voltage (UH) to the first resistor (H1W1) of the first heating element (H1).

[0246] A first voltage (UTP1) can be measured at the terminals of the first thermopile (TP1).

[0247] A third voltage (UK) can be measured at the terminals of the first control element (K1).

[0248] The first voltage (UTP1) and the third voltage (UK) depend on the temperature increase at the first resistor (H1W1) of the first heating element (H1).

[0249] The functionality of the first thermopile (TP1) can be checked by comparing the first voltage (UTP1) with the third voltage (UK).

[0250] The proposed device and method can be used to implement self-testable, metal-layer-free thermopiles in infrared sensors in motor vehicles. The test can be performed at the end of production of the vehicle or its add-on components, but also when the vehicle is stationary or not in use, or during operation, i.e., while driving. K) Thermopile in infrared sensor for person detection in vehicle interiors

[0251] Another proposed thermopile comprises at least a first, in particular metal-layer-free, thermocouple. The thermocouple comprises a first thermocouple (TE1) and a second thermocouple (TE2).

[0252] The first thermocouple (TE1) and the second thermocouple (TE2) are made of the same material except for a possible doping.

[0253] The first thermocouple (TE1) and the second thermocouple (TE2) are electrically connected to each other by an electrically conductive connection. The electrically conductive connection consists of the electrically conductive connection of the material of the first thermocouple (TE1) and the electrically conductive connection of the material of the second thermocouple (TE2), each interspersed with other types of atoms, in particular metal atoms, for example, titanium atoms and / or tungsten atoms and / or cobalt atoms and / or nickel atoms.

[0254] The material of the first thermocouple (TE1) and the second thermocouple (TE2) is preferably polysilicon. The electrically conductive compound formed by the electrically conductive compound of the material of the first thermocouple (TE1) and the second thermocouple (TE2) with other atom types is a silicide, preferably titanium silicide and / or tungsten silicide or cobalt silicide or nickel silicide and / or an electrically conductive silicide of another metal.

[0255] The silicide that electrically connects the first thermocouple (TE1) and the second thermocouple (TE2) is in the same layer plane of the CMOS stack as the first thermocouple (TE1) and the second thermocouple (TE2).

[0256] The possible doping of the first thermocouple (TE1) is of a first doping type.

[0257] The possible doping of the second thermocouple (TE2) is of a second doping type.

[0258] The first doping type can be a p-doping or an n-doping.

[0259] The second doping type is an n-doping if the first doping type is a p-doping.

[0260] The second doping type is a p-doping if the first doping type is an n-doping.

[0261] Doping of the first thermocouple (TE1) and the second thermocouple (TE2) with different doping types can be omitted if either the surface of the first thermocouple (TE1) or the surface of the second thermocouple (TE2) is completely silicided.

[0262] The connection points of the thermopile for electrical connection to other electronic components are preferably made of silicide.

[0263] At least one proposed thermopile can be used as part of an infrared sensor system or infrared sensor.

[0264] It is proposed to use at least one such infrared sensor in the interior of motor vehicles to detect persons.

[0265] This at least one infrared sensor can then be used in the interior of motor vehicles to detect the body temperature of the vehicle occupants, in particular to detect fever.

[0266] Likewise, this at least one infrared sensor can be used, for example, in the interior of motor vehicles to detect the body temperature of the vehicle occupants, in particular to distinguish between dead and living organisms.

[0267] Likewise, this at least one infrared sensor can be used in the interior of motor vehicles to detect the body temperature of the vehicle occupants, even when the vehicle is locked from the outside. This allows the detection of elevated body temperatures of children or pets remaining in the vehicle compared to the ambient temperature, triggering an alarm to prevent accidents. L) Thermopile array in an infrared camera

[0268] Another proposed silicided thermopile preferably comprises at least one metal layer-free thermocouple.

[0269] The metal layer-free thermocouple comprises a first thermocouple (TE1) and a second thermocouple (TE2).

[0270] The first thermocouple (TE1) and the second thermocouple (TE2) are made of the same material, except for any possible doping. The first thermocouple (TE1) and the second thermocouple (TE2) are electrically connected to each other by an electrically conductive connection. The electrically conductive connection consists of the electrically conductive connection of the material of the first thermocouple (TE1) and the electrically conductive connection of the material of the second thermocouple (TE2), each intermixed with other types of atoms, in particular metal atoms, for example, titanium atoms and / or tungsten atoms and / or cobalt atoms and / or nickel atoms.

[0271] Preferably, the material of the first thermocouple (TE1) and the second thermocouple (TE2) is polycrystalline silicon, so-called polysilicon. Consequently, the electrically conductive compound formed by the electrically conductive compound of the material of the first thermocouple (TE1) and the second thermocouple (TE2) with other atom types is a silicide.

[0272] Preferably, the electrically conductive connection is made from the electrically conductive connection of the material of the first thermocouple (TE1) and the second thermocouple (TE2) with other types of atoms, titanium silicide and / or tungsten silicide and / or cobalt silicide and / or nickel silicide and / or an electrically conductive silicide of another metal.

[0273] Preferably, the first thermocouple (TE1) and the second thermocouple (TE2) are in the same plane. The electrically conductive connecting silicide is in the same layer plane of the CMOS stack as the first thermocouple (TE1) and the second thermocouple (TE2).

[0274] The first thermocouple (TE1) is made of heavily doped polysilicon of a first doping type. The second thermocouple (TE2) is made of heavily doped polysilicon of a second doping type. The first doping type can be p-type or n-type. The second doping type is p-type if the first doping type is n-type. The second doping type is n-type if the first doping type is p-type.

[0275] Doping of the first thermocouple (TE1) and the second thermocouple (TE2) with different doping types can be omitted if either the surface of the first thermocouple (TE1) or the surface of the second thermocouple (TE2) is completely silicided.

[0276] The connection points of the proposed silicided thermopile for electrical connection to other electronic components or additional thermopiles are made of silicide.

[0277] Thermocouples of the same doping are preferably arranged directly next to each other.

[0278] A proposed thermopile array comprises a one- or two-dimensional arrangement of at least two proposed thermopiles.

[0279] The thermopiles of the thermopile array are electrically connected to each other by silicidation.

[0280] A proposed infrared camera comprises at least one thermopile array of proposed, i.e. non-metallic, thermopiles.

[0281] A proposed method for enhancing images from a motor vehicle's exterior camera in the dark utilizes additional image information from a proposed infrared camera. The image information from the infrared camera and the second exterior camera is combined into a single image. This combination is achieved by summing the amplitude values. M) Halios device with thermopile

[0282] In this variant, reference is already made to the explanation of the Halios device in Fig. 12, which follows this description, where the Halios principle is explained.

[0283] Another proposed silicided thermopile comprises at least one metal layer-free thermocouple.

[0284] The metal layer-free thermocouple comprises a first thermocouple (TE1) and a second thermocouple (TE2).

[0285] The first thermocouple (TE1) and the second thermocouple (TE2) are made of the same material, except for possible doping. The first thermocouple (TE1) and the second thermocouple (TE2) are electrically connected to each other by an electrically conductive connection. The electrically conductive connection consists of the electrically conductive connection of the material of the first thermocouple (TE1) and the electrically conductive connection of the material of the second thermocouple (TE2), each intermixed with other types of atoms, in particular metal atoms, for example, titanium atoms and / or tungsten atoms and / or cobalt atoms and / or nickel atoms.

[0286] The material of the first thermocouple (TE1) and the second thermocouple (TE2) is preferably polycrystalline silicon. Consequently, the electrically conductive compound formed by the electrically conductive compound of the material of the first thermocouple (TE1) and the second thermocouple (TE2) with other atomic species is a silicide, preferably titanium silicide, tungsten silicide, cobalt silicide, nickel silicide, and / or an electrically conductive silicide of another metal.

[0287] Preferably, the first thermocouple (TE1) and the second thermocouple (TE2) are in the same plane. The electrically conductive connecting silicide is in the same layer plane of the CMOS stack as the first thermocouple (TE1) and the second thermocouple (TE2).

[0288] The first thermocouple (TE1) is made of heavily doped polysilicon of a first doping type. The second thermocouple (TE2) is made of heavily doped polysilicon of a second doping type. The first doping type can be p-type or n-type. The second doping type is p-type if the first doping type is n-type. The second doping type is n-type if the first doping type is p-type.

[0289] Doping of the first thermocouple (TE1) and the second thermocouple (TE2) with different doping types can be omitted if either the surface of the first thermocouple (TE1) or the surface of the second thermocouple (TE2) is completely silicided.

[0290] The connection points of the proposed silicided thermopile for electrical connection to other electronic components or additional thermopiles are made of silicide.

[0291] Thermocouples of the same doping are preferably arranged directly next to each other.

[0292] In a Halios device, at least one proposed thermopile is used in a receiver (D).

[0293] In summary, such a thermopile-Halios system can be described as a Halios device, comprising a transmitter (H) and a compensation transmitter (K), which radiate complementarily into a receiver (D). The receiver (D) generates a received signal (S0), wherein the transmitted amplitude of the transmitter (H) and / or the transmitted amplitude of the compensation transmitter (K) are controlled by a controller (V, MP1, F, MP, A) in such a way that essentially a constant signal results as the received signal (S0), apart from control errors and / or external interference. The proposed device is characterized in that at least one thermopile is used as a receiver (D) for electromagnetic radiation from the transmitter (H) and the compensation transmitter (K). The thermopile is preferably free of metal layers and / or non-metallic.

[0294] In this connection, reference will be made in particular to the following state-of-the-art protection laws describing the Halios principle: EP 2 817 657 B, DE 10 001 955 A1, DE 10 001943 C1, DE 10 7 74 36 , 36 B 201 A1, WO 2007 012 502 A1, EP 1 671 160 A1, EP 1 410 507 A1, EP 1 435 509 A1, EP 1 269 929 A1, EP 1 258 084 A, EP 1815, EP 1015 579 307 B1, DE 10 2005 045 993 B4, EP 0 706 648 A1, EP 2 016 480 A2, EP 2 783 232 B1, DE 11 2013 002 097 A5, EP 7, 2019 A5, 1919 A1 013 664 B3, DE 10 2012 010 627 A1, DE 10 2013 019 660 A1, DE 102013 000 376 A1, EP 2 405 283 B1, DE 10 2015 002 27 A1 10 2015 DE 174 B3, DE 102014019172 A1, DE 10 2015 015 389 A1, DE 10 2017100308 B3, DE 10 2017 100 306 A1.

[0295] The use of the principle presented here of metal-free thermocouples using silicides and its use as a receiver in a Halios system, together with the applications of the prior art documents presented above, is a full part of this disclosure and claim. The applicant expressly reserves the right to divide parts of the technical teaching of the documents in combination with the new inventive features into separate divisional applications during the application process. N) Membrane-free thermopile / thermopile as a cantilever

[0296] A proposed thermocouple is metal layer-free.

[0297] A thermopile can be realized with at least one proposed metal-layer-free thermocouple.

[0298] A proposed metal-layer-free thermocouple comprises a first thermocouple (TE1) and a second thermocouple (TE2). The first thermocouple (TE1) and the second thermocouple (TE2) are made of the same material except for their respective doping. The first thermocouple (TE1) and the second thermocouple (TE2) are electrically connected to one another via an electrically conductive connection. The electrically conductive connection consists of the electrically conductive connection of the material of the first thermocouple (TE1) and the electrically conductive connection of the material of the second thermocouple (TE2), each intermixed with other types of atoms, in particular metal atoms, for example titanium atoms and / or tungsten atoms and / or cobalt atoms and / or nickel atoms.

[0299] Preferably, the material of the first thermocouple (TE1) and the second thermocouple (TE2) is polycrystalline silicon. Preferably, the conductive compound formed by the electrically conductive compound of the material of the first thermocouple (TE1) and the second thermocouple (TE2) with other atom types is a silicide.

[0300] Preferably, the conductive connection consists of the electrically conductive connection of the material of the first thermocouple (TE1) and the second thermocouple (TE2) with other types of atoms, titanium silicide and / or tungsten silicide and / or cobalt silicide and / or nickel silicide and / or an electrically conductive silicide of another metal.

[0301] The first thermocouple (TE1) is made of heavily doped polysilicon of a first doping type. The second thermocouple (TE2) is made of heavily doped polysilicon of a second doping type. The first doping type can be a p-doping or an n-doping. The second doping type is a p-type doping if the first doping type is an n-type doping. The second doping type is an n-type doping if the first doping type is a p-type doping.

[0302] Doping of the first thermocouple (TE1) and the second thermocouple (TE2) with different doping types can be omitted if either the surface of the first thermocouple (TE1) or the surface of the second thermocouple (TE2) is completely silicided.

[0303] The connection points of the proposed silicided thermopile for electrical connection to other electronic components or additional thermopiles are made of silicide.

[0304] In this variant, the first thermocouple (TE1) and the second thermocouple (TE2) do not include a dielectric membrane. O) Silicided sensor on membrane

[0305] In contrast to variant N), a proposed sensor for electromagnetic radiation, especially for infrared radiation, is now located on a membrane.

[0306] The proposed sensor is metal layer-free.

[0307] All electrically conductive connections within the sensor and to other electronic components consist of the electrically conductive connection of the sensor material mixed with other types of atoms, in particular metal atoms, for example titanium atoms and / or tungsten atoms and / or cobalt atoms and / or nickel atoms.

[0308] The material of the sensor is silicon or polycrystalline silicon.

[0309] The electrically conductive compound consisting of the electrically conductive compound of the sensor material with a wide variety of atoms is a silicide, preferably titanium silicide or tungsten silicide or cobalt silicide or nickel silicide and / or an electrically conductive silicide of another metal.

[0310] The membrane on which the sensor is located is preferably made of an oxide or a nitride and can contain absorbers and / or absorber layers. Advantage

[0311] The electrical connection of thermocouples made of heavily n-doped and heavily p-doped polysilicon by silicidation of the polycrystalline silicon, the so-called polysilicon, to form a thermocouple and the realization of further electrical leads and connections by silicidation of the polysilicon enable a metal layer-free structure.

[0312] Alternatively, a proposed thermocouple can also be realized by completely silicided the surface of one thermocouple. It is initially irrelevant whether doped or undoped polysilicon is located beneath this silicided surface, and whether the other thermocouple is made of doped or undoped polysilicon. The thermocouple with the silicided surface therefore has a different Seebeck coefficient than the thermocouple without the silicided surface.

[0313] This offers the advantage that very thin membranes and CMOS stacks with integrated thermocouples can be realized, since the thermal expansion coefficients of the functional elements are approximately the same, thus preventing distortion of the thermoelectric voltages of the PN diodes due to mechanical stress effects. This leads to a reduction in thermal mass and thermal conductivity and consequently to increased sensitivity of the infrared sensor. In particular, the response time constants to temporal changes in the irradiation situation of the thermopile elements are improved. The tracking of moving objects in infrared cameras equipped with such thermopiles is improved by the shorter time constant resulting from the reduced heat capacity. The use of non-metallic heating elements as actuators in a self-test device avoids a reduction in these advantages.Due to the smaller space requirement, a higher packing density of thermocouples can be achieved with the same sensor size. This results in a larger sensor signal and thus an improved signal-to-noise ratio.

[0314] Furthermore, this results in greater functional design freedom in the CMOS stack and a corresponding simplification of the process flow. Mechanical robustness is improved due to a reduction in mechanical stress.

[0315] Another significant advantage of the technical teaching disclosed here is the self-adjustment of the silicidation during the manufacture of the thermocouple or thermopile. List of characters Fig. Figure 1 shows an exemplary, unclaimed cross-section of an infrared thermal sensor according to the prior art (SdT). The thermocouples each consist of a thermocouple made of n-doped polysilicon and an aluminum thermocouple. Fig. Figure 2 shows an exemplary, unclaimed cross-section of an infrared thermal sensor according to the prior art (SdT). The thermocouples each consist of a thermocouple made of heavily p-doped silicon and an aluminum thermocouple. Fig. Figure 3 shows an exemplary, unclaimed cross-section of an infrared thermal sensor according to the prior art (SdT). The thermocouples each consist of a thermocouple made of p-doped polysilicon and a thermocouple made of n-doped polysilicon. Fig. Figure 4 shows an exemplary, unclaimed cross-section of an infrared thermal sensor according to the prior art (SdT). The thermocouples each consist of a thermocouple made of heavily p-doped silicon and a thermocouple made of n-doped polysilicon. Fig. Figure 5 shows an example of a cross-section of a possible design of the proposed thermocouple. One thermocouple is made of heavily n-doped polysilicon, and the other is made of heavily p-doped silicon. The thermocouple is metal-layer-free. Fig. Figure 6 shows a simplified representation of a possible design of the proposed thermocouple. The simplified representation illustrates the relative arrangement of the thermocouples and silicides. Fig. Figure 7 shows a simplified representation of a possible structure of the proposed thermocouple in which a silicidation acts as a thermocouple. Fig. Figure 8 shows an example of a series connection of four proposed thermocouples to form a proposed thermopile. The thermocouples that are part of a thermocouple are highlighted. Fig. 9 shows the same exemplary series connection of four proposed thermocouples to a proposed thermopile as Fig. 8. The highlighting of which thermocouples are part of a thermocouple has been omitted for better clarity. Fig. Figure 10 shows an example of the improved layout of a series connection of four proposed thermocouples to form a proposed thermopile. Regions of the same doping are adjacent. This allows for smaller distances between the thermocouples and simplifies the manufacturing process. Fig. Figure 11 shows an example of a possible setup for a proposed test structure for up to two proposed thermopiles by comparing the temperature measured by the thermopiles under test with the temperature measured by another, different thermosensitive sensor structure. The individual elements of the test structure are highlighted by ellipses with dashed borders for quicker understanding. Fig. Figure 12 shows a Halios device according to the state of the art (SdT). According to the proposed method, a thermopile can be used as a receiver. Description of the characters

[0316] The figures illustrate possible embodiments and uses of the invention. Figure 1

[0317] Fig. Figure 1 shows an exemplary cross-section of a state-of-the-art infrared thermal sensor (SdT). The thermocouples each consist of an n-doped polysilicon thermocouple and an aluminum thermocouple.

[0318] A second membrane (MEM2) is located on a second substrate (SUB2). On the second membrane (MEM2) there is a second insulation layer (I2). On top of the second insulation layer (I2) there is a third insulation layer (I3).

[0319] The second substrate (SUB2) is made of doped or undoped silicon or doped or undoped polysilicon. The second membrane (MEM2) is made of a dielectric material.

[0320] At a fifth distance (d5) from a second left side surface (LSF2) of the described stack, consisting of the second substrate (SUB2) and the second membrane (MEM2) and the second insulation layer (I2) and the third insulation layer (I3), and at a seventh distance (d7) from a second rear side surface (HSF2) of the described stack, a third trench (G3) with a width (BG3) of the third trench (G3) and a length (LG3) of the third trench (G3) and a height (HG3) of the third trench (G3) from the surface of the third insulation layer (I3) into the second substrate (SUB2) is introduced.

[0321] At a sixth distance (d6) from a second right side surface (RSF2) of the described stack and at an eighth distance (d8) from the second rear side surface (HSF2) of the described stack, a fourth trench (G4) with a width (BG4) of the fourth trench (G4) and a length (LG4) of the fourth trench (G4) and a height (HG4) of the fourth trench (G4) from the surface of the third insulation layer (I3) into the second substrate (SUB2) is introduced.

[0322] The fifth distance (d5) is equal to the sixth distance (d6). The seventh distance (d7) is equal to the eighth distance (d8). The width (BG3) of the third trench (G3) is equal to the width (BG4) of the fourth trench (G4). The length (LG3) of the third trench (G3) is equal to the length (LG4) of the fourth trench (G4). The height (HG3) of the third trench (G3) is equal to the height (HG4) of the fourth trench (G4).

[0323] Between the third trench (G3) and the fourth trench (G4), a substrate-free second cavity (C2) is introduced below the second membrane (MEM2).

[0324] The second insulation layer (I2) comprises a fourth thermocouple (TE4) and a sixth thermocouple (TE6) above the second cavity (C2). The third insulation layer (I3) comprises a third thermocouple (TE3) and a fifth thermocouple (TE5) above the second cavity (C2). The third thermocouple (TE3) is electrically conductively connected to the fourth thermocouple (TE4). The fifth thermocouple (TE5) is electrically conductively connected to the sixth thermocouple (TE6). The third thermocouple (TE3) and the fifth thermocouple (TE5) are made of aluminum. The fourth thermocouple (TE4) and the sixth thermocouple (TE6) are made of n-doped polysilicon. The electrically conductive connection between the third thermocouple (TE3) and the fourth thermocouple (TE4) is made of aluminum. The electrically conductive connection between the fifth thermocouple (TE5) and the sixth thermocouple (TE6) is made of aluminum. Figure 2

[0325] Fig. Figure 2 shows an exemplary cross-section of a state-of-the-art infrared thermal sensor (SdT). The thermocouples each consist of a heavily p-doped silicon thermocouple and an aluminum thermocouple.

[0326] A third membrane (MEM3) is located on a third substrate (SUB3). A fourth insulation layer (I4) is located on the third membrane (MEM3). A fifth insulation layer (I5) is located on the fourth insulation layer (I4).

[0327] The third substrate (SUB3) is made of doped or undoped silicon or doped or undoped polysilicon. The third membrane (MEM3) is made of a dielectric material.

[0328] At a ninth distance (d9) from a third left side surface (LSF3) of the described stack, consisting of the third substrate (SUB3) and the third membrane (MEM3) and the fourth insulation layer (I4) and the fifth insulation layer (I5), and at an eleventh distance (d11) from a third rear side surface (HSF3) of the described stack, a fifth trench (G5) with a width (BG5) of the fifth trench (G5) and a length (LG5) of the fifth trench (G5) and a height (HG5) of the fifth trench (G5) from the surface of the fifth insulation layer (I5) into the third substrate (SUB3) is introduced.

[0329] At a tenth distance (d10) from a third right side surface (RSF3) of the described stack and at a twelfth distance (d12) from the third rear side surface (HSF3) of the described stack, a sixth trench (G6) with a width (BG6) of the sixth trench (G6) and a length (LG6) of the sixth trench (G6) and a height (HG6) of the sixth trench (G6) is introduced from the surface of the fifth insulation layer (I5) into the third substrate (SUB3).

[0330] The ninth distance (d9) is equal to the tenth distance (d10). The eleventh distance (d11) is equal to the twelfth distance (d12). The width (BG5) of the fifth trench (G5) is equal to the width (BG6) of the sixth trench (G6). The length (LG5) of the fifth trench (G5) is equal to the length (LG6) of the sixth trench (G6). The height (HG5) of the fifth trench (G5) is equal to the height (HG6) of the sixth trench (G6).

[0331] Between the fifth trench (G5) and the sixth trench (G6), a substrate-free third cavity (C3) is introduced below the third membrane (MEM3). A first well (W1) is introduced into the third cavity (C3). The first well (W1) comprises a seventh thermocouple (TE7) and a ninth thermocouple (TE9). The fourth insulation layer (I4) and the fifth insulation layer (I5) comprise an eighth thermocouple (TE8). The fourth insulation layer (I4) and the fifth insulation layer (I5) comprise a tenth thermocouple (TE10). The eighth thermocouple (TE8) is electrically conductively connected to the seventh thermocouple (TE7). The tenth thermocouple (TE10) is electrically conductively connected to the ninth thermocouple (TE9).

[0332] The first well (W1) is made of n-doped polysilicon or n-doped silicon. The seventh thermocouple (TE7) is made of heavily p-doped polysilicon. The ninth thermocouple (TE9) is made of heavily p-doped polysilicon. The eighth thermocouple (TE8) is made of aluminum. The ninth thermocouple (TE9) is made of aluminum. Figure 3

[0333] Fig. Figure 3 shows an exemplary cross-section of a state-of-the-art infrared thermal sensor (SdT). The thermocouples each consist of a p-doped polysilicon thermocouple and an n-doped polysilicon thermocouple.

[0334] A fourth membrane (MEM4) is located on a fourth substrate (SUB4). On the fourth membrane (MEM4) there is a sixth insulation layer (I6). On top of the sixth insulation layer (I6) there is a seventh insulation layer (I7). On top of the seventh insulation layer (I7) there is an eighth insulation layer (I8).

[0335] The fourth substrate (SUB4) is made of doped or undoped silicon or doped or undoped polysilicon. The fourth membrane (MEM4) is made of a dielectric material.

[0336] At a thirteenth distance (d13) from a fourth left side surface (LSF4) of the described stack, consisting of the fourth substrate (SUB4) and the fourth membrane (MEM4) and the sixth insulation layer (I6) and the seventh insulation layer (I7) and the eighth insulation layer (I8), and at a fifteenth distance (d15) from a fourth rear side surface (HSF4) of the described stack, a seventh trench (G7) with a width (BG7) of the seventh trench (G7) and a length (LG7) of the seventh trench (G7) and a height (HG7) of the seventh trench (G7) from the surface of the eighth insulation layer (I8) into the fourth substrate (SUB4) is introduced.

[0337] At a fourteenth distance (d14) from a fourth right side surface (RSF4) of the described stack and at a sixteenth distance (d16) from the fourth rear side surface (HSF4) of the described stack, an eighth trench (G8) with a width (BG8) of the eighth trench (G8) and a length (LG8) of the eighth trench (G8) and a height (HG8) of the eighth trench (G8) from the surface of the eighth insulation layer (I8) into the fourth substrate (SUB4) is introduced.

[0338] The thirteenth distance (d13) is equal to the fourteenth distance (d14). The fifteenth distance (d15) is equal to the sixteenth distance (d16). The width (BG7) of the seventh trench (G7) is equal to the width (BG8) of the eighth trench (G8). The length (LG7) of the seventh trench (G7) is equal to the length (LG8) of the eighth trench (G8). The height (HG7) of the seventh trench (G7) is equal to the height (HG8) of the eighth trench (G8).

[0339] Between the seventh trench (G7) and the eighth trench (G8), a substrate-free fourth cavity (C4) is inserted below the fourth membrane (MEM4).

[0340] The sixth insulation layer (I6) comprises a twelfth thermocouple (TE12) and a fourteenth thermocouple (TE14) above the fourth cavity (C4). The seventh insulation layer (I7) comprises an eleventh thermocouple (TE11) and a thirteenth thermocouple (TE13) above the fourth cavity (C4). The eighth insulation layer (I8) comprises a first metallic connection (M1) above the eleventh thermocouple (TE11) and the twelfth thermocouple (TE12). The eighth insulation layer (I8) comprises a second metallic connection (M2) above the thirteenth thermocouple (TE13) and the fourteenth thermocouple (TE14). The first metallic connection (M1) electrically connects the eleventh thermocouple (TE11) and the twelfth thermocouple (TE12) to one another. The second metallic connection (M2) electrically connects the thirteenth thermocouple (TE13) and the fourteenth thermocouple (TE14).

[0341] The eleventh thermocouple (TE11) and the thirteenth thermocouple (TE13) are made of p-doped polysilicon. The twelfth thermocouple (TE12) and the fourteenth thermocouple (TE14) are made of n-doped polysilicon. The first metallic junction (M1) and the second metallic junction (M2) are made of aluminum. Figure 4

[0342] Fig. Figure 4 shows an exemplary cross-section of a state-of-the-art infrared thermal sensor (SdT). The thermocouples each consist of a thermocouple made of heavily p-doped silicon and a thermocouple made of n-doped polysilicon.

[0343] A fifth membrane (MEM5) is located on a fifth substrate (SUB5). A ninth insulation layer (I9) is located on the fifth membrane (MEM5). A tenth insulation layer (I10) is located on the ninth insulation layer (I9).

[0344] The fifth substrate (SUB5) is made of doped or undoped silicon or doped or undoped polysilicon. The fifth membrane (MEM5) is made of a dielectric material.

[0345] At a seventeenth distance (d17) from a fifth left side surface (LSF5) of the described stack, consisting of the fifth substrate (SUB5) and the fifth membrane (MEM5) and the ninth insulation layer (I9) and the tenth insulation layer (I10), and at a nineteenth distance (d19) from a fifth rear side surface (HSF5) of the described stack, a ninth trench (G9) with a width (BG9) of the ninth trench (G9) and a length (LG9) of the ninth trench (G9) and a height (HG9) of the ninth trench (G9) from the surface of the tenth insulation layer (I10) into the fifth substrate (SUB5) is introduced.

[0346] At an eighteenth distance (d18) from a fifth right side surface (RSF5) of the described stack and at a twentieth distance (d20) from the fifth rear side surface (HSF5) of the described stack, a tenth trench (G10) with a width (BG10) of the tenth trench (G10) and a length (LG10) of the tenth trench (G10) and a height (HG10) of the tenth trench (G10) from the surface of the tenth insulation layer (I10) into the fifth substrate (SUB5) is introduced.

[0347] The seventeenth distance (d17) is preferably equal to the eighteenth distance (d18). The nineteenth distance (d19) is preferably equal to the twentieth distance (d20). The width (BG9) of the ninth trench (G9) is preferably equal to the width (BG10) of the tenth trench (G10). The length (LG9) of the ninth trench (G9) is preferably equal to the length (LG10) of the tenth trench (G10). The height (HG9) of the ninth trench (G9) is preferably equal to the height (HG10) of the tenth trench (G10).

[0348] Between the ninth trench (G9) and the tenth trench (G10), a substrate-free fifth cavity (C5) is inserted below the fifth membrane (MEM5). A fifteenth thermocouple (TE15) and a seventeenth thermocouple (TE17) are inserted into the fifth cavity (C5), directly below the fifth membrane (MEM5). The ninth insulation layer (I9) comprises a sixteenth thermocouple (TE16) and an eighteenth thermocouple (TE18).

[0349] The tenth insulation layer (I10) comprises a third metallic connection (M3) above the fifteenth thermocouple (TE15) and the sixteenth thermocouple (TE16). The tenth insulation layer (I10) comprises a fourth metallic connection (M4) above the seventeenth thermocouple (TE17) and the eighteenth thermocouple (TE18). The third metallic connection (M3) electrically connects the fifteenth thermocouple (TE15) and the sixteenth thermocouple (TE16). The fourth metallic connection (M4) electrically connects the seventeenth thermocouple (TE17) and the eighteenth thermocouple (TE18).

[0350] The fifteenth thermocouple (TE15) and the seventeenth thermocouple (TE17) are made of heavily p-doped polysilicon. The sixteenth thermocouple (TE16) and the eighteenth thermocouple (TE18) are made of n-doped polysilicon. The third metallic junction (M3) and the fourth metallic junction (M4) are made of aluminum. Figure 5

[0351] Fig. Figure 5 shows an example of the cross-section of a possible structure of the proposed thermocouple.

[0352] A first membrane (MEM1) is located on a first substrate (SUB1). A first polysilicon layer (PS1) is located on the first membrane (MEM1). A first insulation layer (I1) is located on the first polysilicon layer (PS1).

[0353] The first substrate (SUB1) is made of doped or undoped silicon or doped or undoped polysilicon. The first membrane (MEM1) is made of a dielectric material, such as an oxide or a nitride. The first membrane (MEM1) can contain absorbers and / or absorber layers for infrared radiation.

[0354] At a first distance (d1) from a first left side surface (LSF1) of the described stack, consisting of the first substrate (SUB1) and the first membrane (MEM1) and the first polys-silicon layer (PS1) and the first insulation layer (I1), and at a third distance (d3) from a first rear side surface (HSF1) of the described stack, a first trench (G1) with a width (BG1) of the first trench (G1) and a length (LG1) of the first trench (G1) and a height (HG1) of the first trench (G1) from the surface of the first insulation layer (I1) into the first substrate (SUB1) is introduced.

[0355] At a second distance (d2) from a first right side surface (RSF1) of the described stack and at a fourth distance (d4) from the first rear side surface (HSF1) of the described stack, a second trench (G2) with a width (BG2) of the second trench (G2) and a length (LG2) of the second trench (G2) and a height (HG2) of the second trench (G2) from the surface of the first insulation layer (I1) into the first substrate (SUB1) is introduced.

[0356] Preferably, the first distance (d1) is equal to the second distance (d2). Preferably, the third distance (d3) is equal to the fourth distance (d4). Preferably, the width (BG1) of the first trench (G1) is equal to the width (BG2) of the second trench (G2). Preferably, the length (LG1) of the first trench (G1) is equal to the length (LG2) of the second trench (G2). Preferably, the height (HG1) of the first trench (G1) is equal to the height (HG2) of the second trench (G2).

[0357] Between the first trench (G1) and the second trench (G2) a substrate-free first cavity (C1) is introduced below the first membrane (MEM1).

[0358] The first polysilicon layer (PS1) comprises a first thermocouple (TE1) and a second thermocouple (TE2) above the first cavity (C1), as well as a second silicidation (SI2). The second silicidation (SI2) is located between the first thermocouple (TE1) and the second thermocouple (TE2). The second silicidation (SI2) electrically connects the first thermocouple (TE1) and the second thermocouple (TE2).

[0359] The first thermocouple (TE1) consists of heavily doped polysilicon of a first doping type. The second thermocouple (TE2) consists of heavily doped polysilicon of a second doping type. The first doping type can be n-type or p-type. The second doping type is p-type if the first doping type is n-type. The second doping type is n-type if the first doping type is p-type. The second silicidation (SI2) consists of polysilicon silicided, for example, using titanium.

[0360] Between the first left side surface (LSF1) and the first trench (G1), the first polysilicon layer (PS1) comprises a first silicidation (SI1). Between the first right side surface (RSF1) and the second trench (G2), the first polysilicon layer (PS1) comprises a third silicidation (SI3). The first silicidation (SI1) consists of polysilicon silicided using titanium, for example. The third silicidation (SI3) consists of polysilicon silicided using titanium, for example. The first silicidation (SI1) and the third silicidation (SI3) serve as electrically conductive connection points for additional thermocouples or other electronic components.

[0361] The other silicide options already described are mentioned again here. Figure 6

[0362] Fig. Figure 6 shows a simplified representation of a possible design of the proposed thermocouple. The simplified representation illustrates the relative arrangement of the thermocouples and silicides.

[0363] A nineteenth thermocouple (TE19) is adjacent to a twentieth thermocouple (TE20).

[0364] The nineteenth thermocouple (TE19) consists of heavily doped polysilicon of a first doping type. The twentieth thermocouple (TE20) consists of heavily doped polysilicon of a second doping type. The first doping type can be n-type or p-type. The second doping type is p-type if the first doping type is n-type. The second doping type is n-type if the first doping type is p-type.

[0365] The nineteenth thermocouple (TE19) and the twentieth thermocouple (TE20) form a pn junction.

[0366] A twentieth silicidation (SI20) extends from the surface of the nineteenth thermocouple (TE19) and the twentieth thermocouple (TE20) into the nineteenth thermocouple (TE19) and the twentieth thermocouple (TE20). However, the twentieth silicidation (SI20) does not spatially separate the nineteenth thermocouple (TE19) and the twentieth thermocouple (TE20). A pn ​​junction remains below the twentieth silicidation (SI20).

[0367] The twentieth silicidation (SI20) consists of polysilicon silicided using, for example, titanium atoms. Silicided using tungsten, cobalt, nickel, and / or other suitable metal atoms is also possible. Figure 7

[0368] Fig. Figure 7 shows a simplified representation of a possible structure of the proposed thermocouple in which a silicidation acts as a thermocouple.

[0369] A twenty-first thermocouple (TE21) is adjacent to a twenty-second thermocouple (TE22). The twenty-first thermocouple (TE21) is made of undoped polysilicon or doped polysilicon. The twenty-second thermocouple (TE22) is made of undoped polysilicon or doped polysilicon and includes a twenty-first silicidation (SI21). The twenty-first silicidation (SI21) extends over the entire surface of the polysilicon of the twenty-second thermocouple (TE22).

[0370] For the use of the twenty-first thermocouple (TE21) and the twenty-second thermocouple (TE22) comprising the twenty-first silicidation (SI21) as a thermocouple, the different Seebeck coefficients of the twenty-first thermocouple (TE21) and the twenty-first silicidation (SI21) are crucial. Figure 8

[0371] Fig. Figure 8 shows an example of a series connection of four proposed thermocouples to form a proposed thermopile. The thermocouples that are part of a thermocouple are highlighted. For this purpose, the thermocouples of a thermocouple are enclosed within a dashed rectangle.

[0372] A first thermocouple (TC11) of a first thermocouple (TC1) is electrically connected to a second thermocouple (TC12) of the first thermocouple (TC1) by a fourth silicide (SI4).

[0373] A first thermocouple (TC21) of a second thermocouple (TC2) is electrically connected to a second thermocouple (TC22) of the second thermocouple (TC2) by a fifth silicide (SI5).

[0374] A first thermocouple (TC31) of a third thermocouple (TC3) is electrically connected to a second thermocouple (TC32) of the third thermocouple (TC3) by a sixth silicide (SI6).

[0375] A first thermocouple (T41) of a fourth thermocouple (TC4) is electrically connected to a second thermocouple (TC42) of the fourth thermocouple (TC4) by a seventh silicide (SI7).

[0376] A first thermocouple (T51) of a fifth thermocouple (TC5) is electrically connected to a second thermocouple (TC52) of the fifth thermocouple (TC5) by an eighth silicide (SI8).

[0377] The second thermocouple (TC12) of the first thermocouple (TC1) is electrically connected to the first thermocouple (TC21) of the second thermocouple (TC2) via a ninth silicide (SI9).

[0378] The second thermocouple (TC22) of the second thermocouple (TC2) is electrically connected to the first thermocouple (TC31) of the third thermocouple (TC3) via a tenth silicide (SI10).

[0379] The second thermocouple (TC32) of the third thermocouple (TC3) is electrically connected to the first thermocouple (TC41) of the fourth thermocouple (TC4) via an eleventh silicide (SI11).

[0380] The second thermocouple (TC42) of the fourth thermocouple (TC4) is electrically connected to the first thermocouple (TC51) of the fifth thermocouple (TC5) via a twelfth silicide (SI12).

[0381] The first thermocouple (TC11) of the first thermocouple (TC1) is electrically connected to a first connection pad (P1) by a thirteenth silicide (SI13).

[0382] The second thermocouple (TC52) of the fifth thermocouple (TC5) is electrically connected to a second connection pad (P2) by a fourteenth silicide (SI14).

[0383] A temperature-dependent voltage (UT) is present between the first connection pad (P1) and the second connection pad (P2).

[0384] The first thermocouple (TC11) of the first thermocouple (TC1) and the first thermocouple (TC12) of the second thermocouple (TC2) and the first thermocouple (TC31) of the third thermocouple (TC3) and the first thermocouple (TC41) of the fourth thermocouple (TC4) and the first thermocouple (TC51) of the fifth thermocouple (TC5) are strips of heavily doped polysilicon of a first doping type. The first doping type is in the Fig. 8 is represented by vertical dashed lines. The first doping type can be p- or n-doping.

[0385] The second thermocouple (TC1) of the first thermocouple (TC1) and the second thermocouple (TC22) of the second thermocouple (TC2) and the second thermocouple (TC32) of the third thermocouple (TC3) and the second thermocouple (TC42) of the fourth thermocouple (TC4) and the second thermocouple (TC52) of the fifth thermocouple (TC5) are strips of heavily doped polysilicon of a second doping type. The first doping type is in the Fig. 8 is represented by horizontal dashed lines. The second doping type is a p-type doping if the first doping type is an n-type doping. The second doping type is an n-type doping if the first doping type is a p-type doping.

[0386] The shape and position of the thermocouples and the silicides are shown here only as examples and can also be realized differently. Figure 9

[0387] Fig. 9 shows the same exemplary series connection of four proposed thermocouples to a proposed thermopile as Fig. 8. The emphasis on which thermocouples are part of a thermocouple has been omitted for clarity. The following description is identical to the description of the Fig. 8 and is provided only for the sake of completeness.

[0388] A first thermocouple (TC11) of a first thermocouple (TC1) is electrically connected to a second thermocouple (TC12) of the first thermocouple (TC1) by a fourth silicide (SI4).

[0389] A first thermocouple (TC21) of a second thermocouple (TC2) is electrically connected to a second thermocouple (TC22) of the second thermocouple (TC2) by a fifth silicide (SI5).

[0390] A first thermocouple (TC31) of a third thermocouple (TC3) is electrically connected to a second thermocouple (TC32) of the third thermocouple (TC3) by a sixth silicide (SI6).

[0391] A first thermocouple (T41) of a fourth thermocouple (TC4) is electrically connected to a second thermocouple (TC42) of the fourth thermocouple (TC4) by a seventh silicide (SI7).

[0392] A first thermocouple (T51) of a fifth thermocouple (TC5) is electrically connected to a second thermocouple (TC52) of the fifth thermocouple (TC5) by an eighth silicide (SI8).

[0393] The second thermocouple (TC12) of the first thermocouple (TC1) is electrically connected to the first thermocouple (TC21) of the second thermocouple (TC2) via a ninth silicide (SI9).

[0394] The second thermocouple (TC22) of the second thermocouple (TC2) is electrically connected to the first thermocouple (TC31) of the third thermocouple (TC3) via a tenth silicide (SI10).

[0395] The second thermocouple (TC32) of the third thermocouple (TC3) is electrically connected to the first thermocouple (TC41) of the fourth thermocouple (TC4) via an eleventh silicide (SI11).

[0396] The second thermocouple (TC42) of the fourth thermocouple (TC4) is electrically connected to the first thermocouple (TC51) of the fifth thermocouple (TC5) via a twelfth silicide (SI12).

[0397] The first thermocouple (TC11) of the first thermocouple (TC1) is electrically connected to a first connection pad (P1) by a thirteenth silicide (SI13).

[0398] The second thermocouple (TC52) of the fifth thermocouple (TC5) is electrically connected to a second connection pad (P2) by a fourteenth silicide (SI14).

[0399] A temperature-dependent voltage (UT) is present between the first connection pad (P1) and the second connection pad (P2).

[0400] The first thermocouple (TC11) of the first thermocouple (TC1) and the first thermocouple (TC12) of the second thermocouple (TC2) and the first thermocouple (TC31) of the third thermocouple (TC3) and the first thermocouple (TC41) of the fourth thermocouple (TC4) and the first thermocouple (TC51) of the fifth thermocouple (TC5) are strips of heavily doped polysilicon of a first doping type. The first doping type is in the Fig. 8 is represented by vertical dashed lines. The first doping type can be p- or n-doping.

[0401] The second thermocouple (TC1) of the first thermocouple (TC1) and the second thermocouple (TC22) of the second thermocouple (TC2) and the second thermocouple (TC32) of the third thermocouple (TC3) and the second thermocouple (TC42) of the fourth thermocouple (TC4) and the second thermocouple (TC52) of the fifth thermocouple (TC5) are strips of heavily doped polysilicon of a second doping type. The first doping type is in the Fig. 8 is represented by horizontal dashed lines. The second doping type is a p-type doping if the first doping type is an n-type doping. The second doping type is an n-type doping if the first doping type is a p-type doping.

[0402] The shape and position of the thermocouples and the silicides are shown here only as examples and can also be realized differently. Figure 10

[0403] Fig. Figure 10 shows an example of the improved layout of a series circuit consisting of four thermocouple series circuits to form a proposed thermopile. Each thermocouple series circuit comprises eight thermocouples connected in series. First, the individual thermocouple series circuits are described, followed by their series connection to form a thermopile, as well as the layout of the thermopile.

[0404] The first thermocouple series circuit (S1) comprises a first thermocouple (S1E1) of the first thermocouple series circuit (S1) and a second thermocouple (S1E2) of the first thermocouple series circuit (S1) and a third thermocouple (S1E3) of the first thermocouple series circuit (S1) and a fourth thermocouple (S1E4) of the first thermocouple series circuit (S1) and a fifth thermocouple (S1E5) of the first thermocouple series circuit (S1) and a sixth thermocouple (S1E6) of the first thermocouple series circuit (S1) and a seventh thermocouple (S1E7) of the first thermocouple series circuit (S1) and an eighth thermocouple (S1E8) of the first thermocouple series circuit (S1) and a first silicidation (S1S1) of the first thermocouple series circuit (S1) and a second silicidation (S1S2) of the first Thermocouple series circuit (S1) and a third silicide (S1S3) of the first thermocouple series circuit (S1) and a fourth silicide (S1S4) of the first thermocouple series circuit(S1) and a fifth silicide (S1S5) of the first thermocouple series circuit (S1) and a sixth silicide (S1S6) of the first thermocouple series circuit (S1) and a seventh silicide (S1S7) of the first thermocouple series circuit (S1).

[0405] The second thermocouple series circuit (S2) comprises a first thermocouple (S2E1) of the second thermocouple series circuit (S2) and a second thermocouple (S2E2) of the second thermocouple series circuit (S2) and a third thermocouple (S2E3) of the second thermocouple series circuit (S2) and a fourth thermocouple (S2E4) of the second thermocouple series circuit (S2) and a fifth thermocouple (S2E5) of the second thermocouple series circuit (S2) and a sixth thermocouple (S2E6) of the second thermocouple series circuit (S2) and a seventh thermocouple (S2E7) of the second thermocouple series circuit (S2) and an eighth thermocouple (S2E8) of the second thermocouple series circuit (S2) and a first silicidation (S2S1) of the second thermocouple series circuit (S2) and a second silicidation (S2S2) of the second Thermocouple series circuit (S2) and a third silicide (S2S3) of the second thermocouple series circuit (S2) and a fourth silicide (S2S4) of the secondThermocouple series circuit (S2) and a fifth silicide (S2S5) of the second thermocouple series circuit (S2) and a sixth silicide (S2S6) of the second thermocouple series circuit (S2) and a seventh silicide (S2S7) of the second thermocouple series circuit (S2).

[0406] The third thermocouple series circuit (S3) comprises a first thermocouple (S3E1) of the third thermocouple series circuit (S3) and a second thermocouple (S3E2) of the third thermocouple series circuit (S3) and a third thermocouple (S3E3) of the third thermocouple series circuit (S3) and a fourth thermocouple (S3E4) of the third thermocouple series circuit (S3) and a fifth thermocouple (S3E5) of the third thermocouple series circuit (S3) and a sixth thermocouple (S3E6) of the third thermocouple series circuit (S3) and a seventh thermocouple (S3E7) of the third thermocouple series circuit (S3) and an eighth thermocouple (S3E8) of the third thermocouple series circuit (S3) and a first silicidation (S3S1) of the third thermocouple series circuit (S3) and a second silicidation (S3S2) of the third Thermocouple series circuit (S3) and a third silicidation (S3S3) of the third thermocouple series circuit (S3) and a fourth silicidation (S3S4) of the thirdThermocouple series circuit (S3) and a fifth silicide (S3S5) of the third thermocouple series circuit (S3) and a sixth silicide (S3S6) of the third thermocouple series circuit (S3) and a seventh silicide (S3S7) of the third thermocouple series circuit (S3).

[0407] The fourth thermocouple series circuit (S4) comprises a first thermocouple (S4E1) of the fourth thermocouple series circuit (S4) and a second thermocouple (S4E2) of the fourth thermocouple series circuit (S4) and a third thermocouple (S4E3) of the fourth thermocouple series circuit (S4) and a fourth thermocouple (S4E4) of the fourth thermocouple series circuit (S4) and a fifth thermocouple (S4E5) of the fourth thermocouple series circuit (S4) and a sixth thermocouple (S4E6) of the fourth thermocouple series circuit (S4) and a seventh thermocouple (S4E7) of the fourth thermocouple series circuit (S4) and an eighth thermocouple (S4E8) of the fourth thermocouple series circuit (S4) and a first silicidation (S4S1) of the fourth thermocouple series circuit (S4) and a second silicidation (S4S2) of the fourth Thermocouple series circuit (S4) and a third silicide (S4S3) of the fourth thermocouple series circuit (S4) and a fourth silicide (S4S4) of the fourthThermocouple series circuit (S4) and a fifth silicide (S4S5) of the fourth thermocouple series circuit (S4) and a sixth silicide (S4S6) of the fourth thermocouple series circuit (S4) and a seventh silicide (S4S7) of the fourth thermocouple series circuit (S4).

[0408] The first thermocouple (S1E1) of the first thermocouple series circuit (S1) is electrically connected to the second thermocouple (S1E2) of the first thermocouple series circuit (S1) by the first silicide (S1S1) of the first thermocouple series circuit (S1). The second thermocouple (S1E2) of the first thermocouple series circuit (S1) is electrically connected to the third thermocouple (S1E3) of the first thermocouple series circuit (S1) by the second silicide (S1S2) of the first thermocouple series circuit (S1). The third thermocouple (S1E3) of the first thermocouple series circuit (S1) is electrically connected to the fourth thermocouple (S1E4) of the first thermocouple series circuit (S1) by the third silicide (S1S3) of the first thermocouple series circuit (S1).The fourth thermocouple (S1E4) of the first thermocouple series circuit (S1) is electrically connected to the fifth thermocouple (S1E5) of the first thermocouple series circuit (S1) by the fourth silicide (S1S4) of the first thermocouple series circuit (S1). The fifth thermocouple (S1E5) of the first thermocouple series circuit (S1) is electrically connected to the sixth thermocouple (S1E6) of the first thermocouple series circuit (S1) by the fifth silicide (S1S5) of the first thermocouple series circuit (S1). The sixth thermocouple (S1E6) of the first thermocouple series circuit (S1) is electrically connected to the seventh thermocouple (S1E7) of the first thermocouple series circuit (S1) by the sixth silicide (S1S6) of the first thermocouple series circuit (S1).The seventh thermocouple (S1E7) of the first thermocouple series circuit (S1) is electrically connected to the eighth thermocouple (S1E8) of the first thermocouple series circuit (S1) by the seventh silicidation (S1S7) of the first thermocouple series circuit (S1).

[0409] The first thermocouple (S2E1) of the second thermocouple series circuit (S2) is electrically connected to the second thermocouple (S2E2) of the second thermocouple series circuit (S2) by the first silicide (S2S1) of the second thermocouple series circuit (S2). The second thermocouple (S2E2) of the second thermocouple series circuit (S2) is electrically connected to the third thermocouple (S2E3) of the second thermocouple series circuit (S2) by the second silicide (S2S2) of the second thermocouple series circuit (S2). The third thermocouple (S2E3) of the second thermocouple series circuit (S2) is electrically connected to the fourth thermocouple (S2E4) of the second thermocouple series circuit (S2) by the third silicide (S2S3) of the second thermocouple series circuit (S2).The fourth thermocouple (S2E4) of the second thermocouple series circuit (S2) is electrically connected to the fifth thermocouple (S2E5) of the second thermocouple series circuit (S2) by the fourth silicide (S2S4) of the second thermocouple series circuit (S2). The fifth thermocouple (S2E5) of the second thermocouple series circuit (S2) is electrically connected to the sixth thermocouple (S2E6) of the second thermocouple series circuit (S2) by the fifth silicide (S2S5) of the second thermocouple series circuit (S2). The sixth thermocouple (S2E6) of the second thermocouple series circuit (S2) is electrically connected to the seventh thermocouple (S2E7) of the second thermocouple series circuit (S2) by the sixth silicide (S2S6) of the second thermocouple series circuit (S2).The seventh thermocouple (S2E7) of the second thermocouple series circuit (S2) is electrically connected to the eighth thermocouple (S2E8) of the second thermocouple series circuit (S2) by the seventh silicidation (S2S7) of the second thermocouple series circuit (S2).

[0410] The first thermocouple (S3E1) of the third thermocouple series circuit (S3) is electrically connected to the second thermocouple (S3E2) of the third thermocouple series circuit (S3) by the first silicide (S3S1) of the third thermocouple series circuit (S3). The second thermocouple (S3E2) of the third thermocouple series circuit (S3) is electrically connected to the third thermocouple (S3E3) of the third thermocouple series circuit (S3) by the second silicide (S3S2) of the third thermocouple series circuit (S3). The third thermocouple (S3E3) of the third thermocouple series circuit (S3) is electrically connected to the fourth thermocouple (S3E4) of the third thermocouple series circuit (S3) by the third silicide (S3S3) of the third thermocouple series circuit (S3).The fourth thermocouple (S3E4) of the third thermocouple series circuit (S3) is electrically connected to the fifth thermocouple (S3E5) of the third thermocouple series circuit (S3) by the fourth silicide (S3S4) of the third thermocouple series circuit (S3). The fifth thermocouple (S3E5) of the third thermocouple series circuit (S3) is electrically connected to the sixth thermocouple (S3E6) of the third thermocouple series circuit (S3) by the fifth silicide (S3S5) of the third thermocouple series circuit (S3). The sixth thermocouple (S3E6) of the third thermocouple series circuit (S3) is electrically connected to the seventh thermocouple (S3E7) of the third thermocouple series circuit (S3) by the sixth silicide (S3S6) of the third thermocouple series circuit (S3).The seventh thermocouple (S3E7) of the third thermocouple series circuit (S3) is electrically connected to the eighth thermocouple (S3E8) of the third thermocouple series circuit (S3) by the seventh silicidation (S3S7) of the third thermocouple series circuit (S3).

[0411] The first thermocouple (S4E1) of the fourth thermocouple series circuit (S4) is electrically connected to the second thermocouple (S4E2) of the fourth thermocouple series circuit (S4) by the first silicide (S4S1) of the fourth thermocouple series circuit (S4). The second thermocouple (S4E2) of the fourth thermocouple series circuit (S4) is electrically connected to the third thermocouple (S4E3) of the fourth thermocouple series circuit (S4) by the second silicide (S4S2) of the fourth thermocouple series circuit (S4). The third thermocouple (S4E3) of the fourth thermocouple series circuit (S4) is electrically connected to the fourth thermocouple (S4E4) of the fourth thermocouple series circuit (S4) by the third silicide (S4S3) of the fourth thermocouple series circuit (S4).The fourth thermocouple (S4E4) of the fourth thermocouple series circuit (S4) is electrically connected to the fifth thermocouple (S4E5) of the fourth thermocouple series circuit (S4) by the fourth silicide (S4S4) of the fourth thermocouple series circuit (S4). The fifth thermocouple (S4E5) of the fourth thermocouple series circuit (S4) is electrically connected to the sixth thermocouple (S4E6) of the fourth thermocouple series circuit (S4) by the fifth silicide (S4S5) of the fourth thermocouple series circuit (S4). The sixth thermocouple (S4E6) of the fourth thermocouple series circuit (S4) is electrically connected to the seventh thermocouple (S4E7) of the fourth thermocouple series circuit (S4) by the sixth silicide (S4S6) of the fourth thermocouple series circuit (S4).The seventh thermocouple (S4E7) of the fourth thermocouple series circuit (S4) is electrically connected to the eighth thermocouple (S4E8) of the fourth thermocouple series circuit (S4) by the seventh silicidation (S4S7) of the fourth thermocouple series circuit (S4).

[0412] The first thermocouple (S1E1) of the first thermocouple series circuit (S1) is electrically connected to a first connection pad (S1P1) of the first thermocouple series circuit (S1) via a fifteenth silicide (SI15). The eighth thermocouple (S4E8) of the fourth thermocouple series circuit (S4) is electrically connected to a first connection pad (S4P1) of the fourth thermocouple series circuit (S4) via a nineteenth silicide (SI9).

[0413] The eighth thermocouple (S1E8) of the first thermocouple series circuit (S1) is electrically connected to the first thermocouple (S2E1) of the second thermocouple series circuit (S2) via a sixteenth silicide (SI16). The eighth thermocouple (S2E8) of the second thermocouple series circuit (S2) is electrically connected to the first thermocouple (S3E1) of the third thermocouple series circuit (S3) via a seventeenth silicide (SI17). The eighth thermocouple (S3E8) of the third thermocouple series circuit (S3) is electrically connected to the first thermocouple (S4E1) of the fourth thermocouple series circuit (S4) via an eighteenth silicide (SI18).

[0414] The first thermocouple (S1E1) of the first thermocouple series circuit (S1) and the third thermocouple (S1E3) of the first thermocouple series circuit (S1) and the fifth thermocouple (S1E5) of the first thermocouple series circuit (S1) and the seventh thermocouple (S1E7) of the first thermocouple series circuit (S1) and the first thermocouple (S2E1) of the second thermocouple series circuit (S2) and the third thermocouple (S2E3) of the second thermocouple series circuit (S2) and the fifth thermocouple (S2E5) of the second thermocouple series circuit (S2) and the seventh thermocouple (S2E7) of the second thermocouple series circuit (S2) and the first thermocouple (S3E1) of the third thermocouple series circuit (S3) and the third thermocouple (S3E3) of the third thermocouple series circuit (S3) and the fifth thermocouple (S3E5) of the third thermocouple series circuit (S3) and the seventh thermocouple (S3E7) of the third thermocouple series circuit (S3) and the first thermocouple (S4E1) of the fourthThe thermocouple series circuit (S4) and the second thermocouple (S4E2) of the fourth thermocouple series circuit (S4) and the third thermocouple (S4E3) of the fourth thermocouple series circuit (S4) and the fourth thermocouple (S4E4) of the fourth thermocouple series circuit (S4) are made of heavily doped polysilicon of a first doping type. The first doping type is in the Fig. 10 is represented by a dotted pattern. The first doping type can be p-type or n-type.

[0415] The second thermocouple (S1E2) of the first thermocouple series circuit (S1) and the fourth thermocouple (S1E4) of the first thermocouple series circuit (S1) and the sixth thermocouple (S1E6) of the first thermocouple series circuit (S1) and the eighth thermocouple (S1E8) of the first thermocouple series circuit (S1) and the second thermocouple (S2E2) of the second thermocouple series circuit (S2) and the fourth thermocouple (S2E4) of the second thermocouple series circuit (S2) and the sixth thermocouple (S2E6) of the second thermocouple series circuit (S2) and the eighth thermocouple (S2E8) of the second thermocouple series circuit (S2) and the second thermocouple (S3E2) of the third thermocouple series circuit (S3) and the fourth thermocouple (S3E4) of the third thermocouple series circuit (S3) and the sixth thermocouple (S3E6) of the third thermocouple series circuit (S3) and the eighth thermocouple (S3E8) of the third thermocouple series circuit (S3) and the second thermocouple (S4E2) of the fourthThermocouple series circuit (S4) and the fourth thermocouple (S4E4) of the fourth thermocouple series circuit (S4) and the sixth thermocouple (S4E6) of the fourth thermocouple series circuit (S4) and the eighth thermocouple (S4E8) of the fourth thermocouple series circuit (S4) are made of heavily doped polysilicon of a second doping type. The second doping type is in the Fig. 10 is represented by non-patterned stripes. The second doping type is an n-type doping when the first doping type is a p-type doping. The second doping type is a p-type doping when the first doping type is an n-type doping.

[0416] The eighth thermocouple (S1E8) of the first thermocouple series circuit (S1) is adjacent to the first thermocouple (S1E1) of the first thermocouple series circuit (S1).

[0417] The eighth thermocouple (S2E8) of the second thermocouple series circuit (S2) is adjacent to the first thermocouple (S2E1) of the second thermocouple series circuit (S2).

[0418] The eighth thermocouple (S3E8) of the third thermocouple series circuit (S3) is adjacent to the first thermocouple (S3E1) of the third thermocouple series circuit (S3).

[0419] The first thermocouple (S4E1) of the fourth thermocouple series circuit (S4) is adjacent to the first thermocouple (S4E1) of the fourth thermocouple series circuit (S4).

[0420] The first thermocouple (S1E1) of the first thermocouple series circuit (S1) and the second thermocouple (S1E2) of the first thermocouple series circuit (S1) and the third thermocouple (S1E3) of the first thermocouple series circuit (S1) and the fourth thermocouple (S1E4) of the first thermocouple series circuit (S1) and the fifth thermocouple (S1E5) of the first thermocouple series circuit (S1) and the sixth thermocouple (S1E6) of the first thermocouple series circuit (S1) and the seventh thermocouple (S1E7) of the first thermocouple series circuit (S1) and the eighth thermocouple (S1E8) of the first thermocouple series circuit (S1) form a closed border of a surface.

[0421] The first thermocouple (S2E1) of the second thermocouple series circuit (S2) and the second thermocouple (S2E2) of the second thermocouple series circuit (S2) and the third thermocouple (S2E3) of the second thermocouple series circuit (S2) and the fourth thermocouple (S2E4) of the second thermocouple series circuit (S2) and the fifth thermocouple (S2E5) of the second thermocouple series circuit (S2) and the sixth thermocouple (S2E6) of the second thermocouple series circuit (S2) and the seventh thermocouple (S2E7) of the second thermocouple series circuit (S2) and the eighth thermocouple (S2E8) of the second thermocouple series circuit (S2) form a closed border of the area in which the first thermocouple series circuit (S1) is located.

[0422] The first thermocouple (S3E1) of the third thermocouple series circuit (S3) and the second thermocouple (S3E2) of the third thermocouple series circuit (S3) and the third thermocouple (S3E3) of the third thermocouple series circuit (S3) and the fourth thermocouple (S3E4) of the third thermocouple series circuit (S3) and the fifth thermocouple (S3E5) of the third thermocouple series circuit (S3) and the sixth thermocouple (S3E6) of the third thermocouple series circuit (S3) and the seventh thermocouple (S3E7) of the third thermocouple series circuit (S3) and the eighth thermocouple (S3E8) of the third thermocouple series circuit (S3) form a closed border of the area in which the second thermocouple series circuit (S2) is located.

[0423] The first thermocouple (S4E1) of the fourth thermocouple series circuit (S4) and the second thermocouple (S4E2) of the fourth thermocouple series circuit (S4) and the third thermocouple (S4E3) of the fourth thermocouple series circuit (S4) and the fourth thermocouple (S4E4) of the fourth thermocouple series circuit (S4) and the fifth thermocouple (S4E5) of the fourth thermocouple series circuit (S4) and the sixth thermocouple (S4E6) of the fourth thermocouple series circuit (S4) and the seventh thermocouple (S4E7) of the fourth thermocouple series circuit (S4) and the eighth thermocouple (S4E8) of the fourth thermocouple series circuit (S4) form a closed border of the area in which the third thermocouple series circuit (S3) is located.

[0424] In the improved layout, regions of the same doping type are located next to each other.

[0425] The first thermocouple (S1E1) of the first thermocouple series circuit (S1) and the first thermocouple (S2E1) of the second thermocouple series circuit (S2) and the first thermocouple (S3E1) of the third thermocouple series circuit (S3) and the first thermocouple (S4E1) of the fourth thermocouple series circuit (S4) are located next to each other.

[0426] The second thermocouple (S1E2) of the first thermocouple series circuit (S1) and the second thermocouple (S2E2) of the second thermocouple series circuit (S2) and the second thermocouple (S3E2) of the third thermocouple series circuit (S3) and the second thermocouple (S4E2) of the fourth thermocouple series circuit (S4) are located next to each other.

[0427] The third thermocouple (S1E3) of the first thermocouple series circuit (S1) and the third thermocouple (S2E3) of the second thermocouple series circuit (S2) and the third thermocouple (S3E3) of the third thermocouple series circuit (S3) and the third thermocouple (S4E3) of the fourth thermocouple series circuit (S4) are located next to each other.

[0428] The fourth thermocouple (S1E4) of the first thermocouple series circuit (S1) and the fourth thermocouple (S2E4) of the second thermocouple series circuit (S2) and the fourth thermocouple (S3E4) of the third thermocouple series circuit (S3) and the fourth thermocouple (S4E4) of the fourth thermocouple series circuit (S4) are located next to each other.

[0429] The fifth thermocouple (S1E5) of the first thermocouple series circuit (S1) and the fifth thermocouple (S2E5) of the second thermocouple series circuit (S2) and the fifth thermocouple (S3E5) of the third thermocouple series circuit (S3) and the fifth thermocouple (S4E5) of the fourth thermocouple series circuit (S4) are located next to each other.

[0430] The sixth thermocouple (S1E6) of the first thermocouple series circuit (S1) and the sixth thermocouple (S2E6) of the second thermocouple series circuit (S2) and the sixth thermocouple (S3E6) of the third thermocouple series circuit (S3) and the sixth thermocouple (S4E6) of the fourth thermocouple series circuit (S4) are located next to each other.

[0431] The seventh thermocouple (S1E7) of the first thermocouple series circuit (S1) and the seventh thermocouple (S2E7) of the second thermocouple series circuit (S2) and the seventh thermocouple (S3E7) of the third thermocouple series circuit (S3) and the seventh thermocouple (S4E7) of the fourth thermocouple series circuit (S4) are adjacent to each other.

[0432] The eighth thermocouple (S1E8) of the first thermocouple series circuit (S1) and the eighth thermocouple (S2E8) of the second thermocouple series circuit (S2) and the eighth thermocouple (S3E8) of the third thermocouple series circuit (S3) and the eighth thermocouple (S4E8) of the fourth thermocouple series circuit (S4) are located next to each other. Figure 11

[0433] Fig. Figure 11 shows an example of a possible setup for a proposed test structure for up to two proposed thermopiles by comparing the temperature measured by the thermopiles under test with the temperature measured by another, different thermosensitive sensor structure. The individual elements of the test structure are highlighted by ellipses with dashed borders for quicker understanding.

[0434] Above a sixth membrane (MEM6) is a first resistor (H1W1) of a first heating element (H1). The sixth membrane (MEM6) is made of a dielectric material, for example, an oxide or a nitride. The sixth membrane (MEM6) can contain absorbers and / or absorber layers for infrared radiation. The sixth membrane (MEM6) is thermally insulated from the underlying substrate. The first resistor (H1W1) of the first heating element (H1) is made of doped or undoped polysilicon and has an electrical resistance on the order of 2.5 Ω / cm. 2 .

[0435] The first resistor (H1W1) of the first heating element (H1) is electrically connected to a first connection pad (H1P1) of the first heating element (H1) by a first silicidation (H1S1) of the first heating element (H1). The first resistor (H1W1) of the first heating element (H1) is electrically connected to a second connection pad (H1P2) of the first heating element (H1) by a second silicidation (H1S2) of the first heating element (H1). The first connection pad (H1P1) of the first heating element (H1) and the second connection pad (H1P2) of the first heating element (H1) are not located above the thermally insulated sixth membrane (MEM6). The first connection pad (H1P1) of the first heating element (H1) and the second connection pad (H1P2) of the first heating element (H1) are electrically connected to a voltage source or to other electronic components.

[0436] Above the sixth membrane (MEM6) is a first thermopile (TP1). The first thermopile (TP1) is constructed like the one in Fig. 9 and in Fig. 8. The structure of the first thermopile (TP1) is therefore not explained in detail here. The first thermopile (TP1) is electrically connected to a first connection pad (TP1P1) of the first thermopile (TP1). The connection is made of silicide. The first thermopile (TP1) is electrically connected to a second connection pad (TP1P2) of the first thermopile (TP1). The connection is made of silicide. The first connection pad (TP1P1) of the first thermopile (TP1) and the second connection pad (TP1P2) of the first thermopile (TP1) are not located above the thermally insulated sixth membrane (MEM6). The first connection pad (TP1P1) of the first thermopile (TP1) and the second connection pad (TP1P2) of the first thermopile (TP1) can be electrically connected to a voltmeter or to other electronic components.A first voltage (UTP1) can be applied between the first connection pad (TP1P1) of the first thermopile (TP1) and the second connection pad (TP1P2) of the first thermopile (TP1).

[0437] In Fig. 11, the first thermopile (TP1) is shown as an example on the right side of the first resistor (H1W1) of the first heating element (H1) and rotated by 90° relative to it.

[0438] Above the sixth membrane (MEM6) is a second thermopile (TP2). The second thermopile (TP2) is constructed in the same way as the one in Fig. 9 and in Fig. 8. The structure of the second thermopile (TP2) is therefore not explained in detail here. The second thermopile (TP2) is electrically connected to a first connection pad (TP2P1) of the second thermopile (TP2). The connection is made of silicide. The second thermopile (TP2) is electrically connected to a second connection pad (TP2P2) of the second thermopile (TP2). The connection is made of silicide. The first connection pad (TP2P1) of the second thermopile (TP2) and the second connection pad (TP2P2) of the second thermopile (TP2) are not located above the thermally insulated sixth membrane (MEM6). The first connection pad (TP2P1) of the second thermopile (TP2) and the second connection pad (TP2P2) of the second thermopile (TP2) can be electrically connected to a voltmeter or to other electronic components.A second voltage (UTP2) can be applied between the first connection pad (TP2P1) of the second thermopile (TP2) and the second connection pad (TP2P2) of the second thermopile (TP2).

[0439] In Fig. 11, the second thermopile (TP2) is shown as an example on the left side of the first resistor (H1W1) of the first heating element (H1) and opposite the first thermopile (TP1).

[0440] The proposed test structure includes a further, different thermosensitive sensor structure for determining the temperature set by the first heating element (H1). For this purpose, a series circuit of four diodes is used as an example.

[0441] Above the sixth membrane (MEM6) is a first control element (K1). The first control element (K1) comprises a series circuit of a first diode (K1D1) of the first control element (K1), a second diode (K1D2) of the first control element (K1), a third diode (K1D3) of the first control element (K1), and a fourth diode (K1D4) of the first control element (K1).

[0442] The first diode (K1D1) of the first control element (K1) and the second diode (K1D2) of the first control element (K1) and the third diode (K1D3) of the first control element (K1) and the fourth diode (K1D4) of the first control element (K1) are pn diodes or pin diodes made of polysilicon.

[0443] The first diode (K1D1) of the first control element (K1) is electrically connected to a first connection pad (K1P1) of the first control element (K1) by a first silicidation (K1S1) of the first control element (K1). The fourth diode (K1D4) of the first control element (K1) is electrically connected to a second connection pad (K1P2) of the first control element (K1) by a second silicidation (K1S2) of the first control element (K1).

[0444] The first connection pad (K1P1) of the first control element (K1) and the second connection pad (K1P2) of the first control element (K1) can be electrically connected to a voltmeter or to other electronic components. A third voltage (UK) can be applied between the first connection pad (K1P1) of the first control element (K1) and the second connection pad (K1P2) of the first control element (K1).

[0445] The first control element (K1) is in Fig. 11 opposite the first resistor (H1W1) of the first heating element (H1). However, a different positioning of the first control element (K1) and the first thermopile (TP1) and the first resistor (H1W1) of the first heating element (H1) and the second thermopile (TP2) relative to each other would also be possible. Figure 12

[0446] Fig. Figure 12 shows a Halios device according to the state of the art (SdT). Here, a proposed thermopile can be used as a receiver. A Halios system consists of at least one Fig. Halios device shown in Figure 12.

[0447] An infrared LED is used as a transmitter (H). The transmitter (H) emits an optical transmission signal (OS1). A transmission signal (S5) is generated by a generator (G). The transmission signal (S5) modulates the amplitude of the transmitter (H) and thus the amplitude of the optical transmission signal (OS1). The optical transmission signal (OS1) is reflected and transmitted by an object (O) to be detected. A reflected optical transmission signal (OS3) is received by a receiver (D). The receiver (D) can comprise at least one proposed thermopile. The receiver (D) converts the reflected optical transmission signal (OS3) into a reception signal (S0). The reception signal (S0) is amplified by a preamplifier (V) to an amplified reception signal (S01). The amplified received signal (S01) and the transmitted signal (S5) are multiplied by a first multiplier (MP1) to form a multiplied received signal (S9).The multiplied received signal (S9) is filtered in a filter (F) to produce a filter output signal (S10). The filter (F) can be a low-pass or band-pass filter. The filter output signal (S10) is amplified by a post-amplifier (VN) to produce an amplified filter output signal (S14). The amplified output signal (S14) can be tapped off at the device shown. Within the device, the amplified filter output signal (S14) is multiplied by the inverted transmitted signal (S5) at a third multiplier (MP3) to produce a compensation feed pre-signal (S6). The transmitted signal (S5) is inverted by multiplying it by "-1" at a second multiplier (MP2).

[0448] The compensation supply pre-signal (S6) is summed at a summer (A) with an offset (B) to form a compensation supply signal (S7). The addition of the offset (B) guarantees a positive value range for the compensation signal (S7). The compensation supply signal (S7) controls a compensation transmitter (K). The compensation transmitter (K) is an infrared LED. The compensation transmitter (K) emits an optical compensation signal (OS2). The optical compensation signal (OS2) is also received by the receiver (D) and superimposed with the reflected optical transmission signal (OS3). glossary

[0449] Infrared - Wikipedia defines infrared radiation as "...light with a wavelength between 780 nm and 1 mm... This corresponds to a frequency range of 300 GHz to 400 THz."

[0450] Metallic - For the purposes of this disclosure, a substance is referred to as metallic if, at room temperature, the valence and conduction bands overlap in at least one direction of the reciprocal lattice.

[0451] Non-metallic - For the purposes of this disclosure, a material is considered non-metallic if it does not meet the definition of "metallic" as stated here, i.e., if the valence and conduction bands do not overlap at room temperature. The non-metallicity of a material can be demonstrated, in particular, by the fact that its electrical conductivity also increases with increasing temperature.

[0452] Metal layer-free - For the purposes of this disclosure, metal layer-free as a property for a device or a device part means that this device or this device part is not metallic, i.e., has no metallic layers, but only non-metallic layers.

[0453] Poor thermal conductivity - For the purposes of this disclosure, poor thermal conductivity of a material is characterized by the thermal conductivity of the poorly thermally conducting material being lower than the thermal conductivity of the substrate by a factor of 1 / N, with N>3 and / or N>10 and / or N>100 and / or N>103 and / or N>104 and / or N>105.

[0454] Heavily n-doped - Wikipedia defines heavily n-doped in silicon as a ratio of 1 donor / 10 4 atoms.

[0455] Heavily p-doped - Wikipedia defines heavily p-doped in silicon as a ratio of 1 acceptor / 10 4 atoms.

[0456] Thermal effect - Thermal effect refers to the change in temperature. The same thermal effect on two functional elements occurs when the difference in temperature change is less than 20°C and / or better than 10°C and / or better than 5°C and / or better than 2°C and / or better than 1°C and / or better than 0.5°C and / or better than 0.2°C and / or better than 0.1°C. List of reference symbols A summer; B positive offset; BG1 Width (BG1) of the first trench (G1); BG2 Width (BG2) of the second trench (G2); BG3 Width (BG3) of the third trench (G3); BG4 Width (BG4) of the fourth trench (G4); BG5 Width (BG5) of the fifth trench (G5); BG6 Width (BG6) of the sixth trench (G6); BG7 Width (BG7) of the seventh trench (G7); BG8 Width (BG8) of the eighth trench (G8); BG9 Width (BG9) of the ninth trench (G9); BG10 Width (BG10) of the tenth trench (G10); C1 first cavity; C2 second cavity; C3 third cavity; C4 fourth cavity; C5 fifth cavity; D receiver; d1 first distance; d2 second distance; d3 third distance; d4 fourth distance; d5 fifth distance; d6 sixth distance; d7 seventh distance; d8 eighth distance; d9 ninth distance; d10 tenth distance; d11 eleventh distance; d12 twelfth distance; d13 thirteenth distance; d14 fourteenth distance; d15 fifteenth distance; d16 sixteenth distance; d17 seventeenth distance; d18 eighteenth distance; d19 nineteenth distance; d20 twentieth distance; G Generator; G1 first ditch; G2 second ditch; G3 third ditch; G4 fourth trench; G5 fifth ditch; G6 sixth trench; G7 seventh ditch; G8 eighth trench; G9 ninth ditch; G10 tenth ditch; H transmitter; H1 first heating element; H1P1 first connection pad (H1P1) of the first heating element (H1); H1P2 second connection pad (H1P2) of the first heating element (H1); H1S1 first silicidation (H1S1) of the first heating element (H1); H1S2 second silicidation (H1S2) of the first heating element (H1); H1W1 first resistance (H1W1) of the first heating element (H1); HG1 height (HG1) of the first trench (G1); HG2 height (HG2) of the second trench (G2); HG3 height (HG3) of the third trench (G3); HG4 height (HG4) of the fourth trench (G4); HG5 height (HG5) of the fifth trench (G5); HG6 height (HG6) of the sixth trench (G6); HG7 height (HG7) of the seventh trench (G7); HG8 Height (HG8) of the eighth trench (G8); HG9 height (HG9) of the ninth trench (G9); HG10 Height (HG10) of the tenth trench (G10); HSF1 first posterior lateral surface; HSF2 second rear side surface; HSF3 third rear side surface; HSF4 fourth rear side surface; HSF5 fifth rear side surface; I1 first insulation layer; I2 second insulation layer; I3 third insulation layer; I4 fourth insulation layer; I5 fifth insulation layer; I6 sixth insulation layer; I7 seventh insulation layer; I8 eighth insulation layer; I9 ninth insulation layer; 110 tenth insulation layer; K compensation transmitter; K1 first control element; K1D1 first diode (K1D1) of the first control element (K1); K1D2 second diode (K1D2) of the first control element (K1); K1D3 third diode (K1D3) of the first control element (K1); K1D4 fourth diode (K1D4) of the first control element (K1); K1P1 first connection pad (K1P1) of the first control element (K1); K1P2 second connection pad (K1P2) of the first control element (K1); K1S1 first silicidation (K1S1) of the first control element (K1); K1S2 second silicidation (K1S2) of the first control element (K1); LG1 Length (LG1) of the first trench (G1); LG2 length (LG2) of the second trench (G2); LG3 Length (LG3) of the third trench (G3); LG4 Length (LG4) of the fourth trench (G4); LG5 Length (LG5) of the fifth trench (G5); LG6 Length (LG6) of the sixth trench (G6); LG7 Length (LG7) of the seventh trench (G7); LG8 Length (LG8) of the eighth trench (G8); LG9 Length (LG9) of the ninth trench (G9); LG10 Length (LG10) of the tenth trench (G10); LSF1 first left side panel; SPF2 second left side panel; LSF3 third left side panel; LSF4 fourth left side panel; SPF5 fifth left side panel; M1 first metallic connection; M2 second metallic connection; M3 third metallic connection; M4 fourth metallic connection; MP1 first multiplier; MP2 second multiplier; MP3 third multiplier; MEM1 first membrane; MEM2 second membrane; MEM3 third membrane; MEM4 fourth membrane; MEM5 fifth membrane; MEM6 sixth membrane; O object to be detected; OS1 optical transmission signal; OS2 optical compensation transmit signal; OS3 reflected optical transmission signal; P1 first connection pad; P2 second connection pad; P3 third connection pad; P4 fourth connection pad; PS1 first polysilicon layer; RSF1 first right side surface; RSF2 second right side surface; RSF3 third right side surface; RSF4 fourth right side surface; RSF5 fifth right side surface; S0 received signal; S01 amplified received signal; S1 first thermocouple series circuit; S1E1 first thermocouple (S1E1) of the first thermocouple series circuit (S1); S1E2 second thermocouple (S1E2) of the first thermocouple series circuit (S1); S1E3 third thermocouple (S1E3) of the first thermocouple series circuit (S1); S1E4 fourth thermocouple (S1E4) of the first thermocouple series circuit (S1); S1E5 fifth thermocouple (S1E5) of the first thermocouple series circuit (S1); S1E6 sixth thermocouple (S1E6) of the first thermocouple series circuit (S1); S1E7 seventh thermocouple (S1E7) of the first thermocouple series circuit (S1); S1E8 eighth thermocouple (S1E8) of the first thermocouple series circuit (S1); S1P1 first connection pad (S1P1) of the first thermocouple series circuit (S1); S1S1 first silicidation (S1S1) of the first thermocouple series circuit (S1); S1S2 second silicidation (S1S2) of the first thermocouple series circuit (S1); S1S3 third silicidation (S1S3) of the first thermocouple series circuit (S1); S1S4 fourth silicidation (S1S4) of the first thermocouple series circuit (S1); S1S5 fifth silicidation (S1S5) of the first thermocouple series circuit (S1); S1S6 sixth silicidation (S1S6) of the first thermocouple series circuit (S1); S1S7 seventh silicidation (S1S7) of the first thermocouple series circuit (S1); S1S8 eighth silicidation (S1S8) of the first thermocouple series circuit (S1); S2 second thermocouple series circuit; S2E1 first thermocouple (S2E1) of the second thermocouple series circuit (S2); S2E2 second thermocouple (S2E2) of the second thermocouple series circuit (S2); S2E3 third thermocouple (S2E3) of the second thermocouple series circuit (S2); S2E4 fourth thermocouple (S2E4) of the second thermocouple series circuit (S2); S2E5 fifth thermocouple (S2E5) of the second thermocouple series circuit (S2); S2E6 sixth thermocouple (S2E6) of the second thermocouple series circuit (S2); S2E7 seventh thermocouple (S2E7) of the second thermocouple series circuit (S2); S2E8 eighth thermocouple (S2E8) of the second thermocouple series circuit (S2); S2S1 first silicidation (S2S1) of the second thermocouple series circuit (S2); S2S2 second silicidation (S2S2) of the second thermocouple series circuit (S2); S2S3 third silicidation (S2S3) of the second thermocouple series circuit (S2); S2S4 fourth silicidation (S2S4) of the second thermocouple series circuit (S2); S2S5 fifth silicidation (S2S5) of the second thermocouple series circuit (S2); S2S6 sixth silicidation (S2S6) of the second thermocouple series circuit (S2); S2S7 seventh silicidation (S2S7) of the second thermocouple series circuit (S2); S2S8 eighth silicidation (S2S8) of the second thermocouple series circuit (S2); S3 third thermocouple series circuit; S3E1 first thermocouple (S3E1) of the third thermocouple series circuit (S3); S3E2 second thermocouple (S3E2) of the third thermocouple series circuit (S3); S3E3 third thermocouple (S3E3) of the third thermocouple series circuit (S3); S3E4 fourth thermocouple (S3E4) of the third thermocouple series circuit (S3); S3E5 fifth thermocouple (S3E5) of the third thermocouple series circuit (S3); S3E6 sixth thermocouple (S3E6) of the third thermocouple series circuit (S3); S3E7 seventh thermocouple (S3E7) of the third thermocouple series circuit (S3); S3E8 eighth thermocouple (S3E8) of the third thermocouple series circuit (S3); S3S1 first silicidation (S3S1) of the third thermocouple series circuit (S3); S3S2 second silicidation (S3S2) of the third thermocouple series circuit (S3); S3S3 third silicidation (S3S3) of the third thermocouple series circuit (S3); S3S4 fourth silicidation (S3S4) of the third thermocouple series circuit (S3); S3S5 fifth silicidation (S3S5) of the third thermocouple series circuit (S3); S3S6 sixth silicidation (S3S6) of the third thermocouple series circuit (S3); S3S7 seventh silicidation (S3S7) of the third thermocouple series circuit (S3); S3S8 eighth silicidation (S3S8) of the third thermocouple series circuit (S3); S4 fourth thermocouple series circuit; S4E1 first thermocouple (S4E1) of the fourth thermocouple series circuit (S4); S4E2 second thermocouple (S4E2) of the fourth thermocouple series circuit (S4); S4E3 third thermocouple (S4E3) of the fourth thermocouple series circuit (S4); S4E4 fourth thermocouple (S4E4) of the fourth thermocouple series circuit (S4); S4E5 fifth thermocouple (S4E5) of the fourth thermocouple series circuit (S4); S4E6 sixth thermocouple (S4E6) of the fourth thermocouple series circuit (S4); S4E7 seventh thermocouple (S4E7) of the fourth thermocouple series circuit (S4); S4E8 eighth thermocouple (S4E8) of the fourth thermocouple series circuit (S4); S4P1 first connection pad (S4P1) of the fourth thermocouple series circuit (S4); S4S1 first silicidation (S4S1) of the fourth thermocouple series circuit (S4); S4S2 second silicidation (S4S2) of the fourth thermocouple series circuit (S4); S4S3 third silicidation (S4S3) of the fourth thermocouple series circuit (S4); S4S4 fourth silicidation (S4S4) of the fourth thermocouple series circuit (S4); S4S5 fifth silicidation (S4S5) of the fourth thermocouple series circuit (S4); S4S6 sixth silicidation (S4S6) of the fourth thermocouple series circuit (S4); S4S7 seventh silicidation (S4S7) of the fourth thermocouple series circuit (S4); S4S8 eighth silicidation (S4S8) of the fourth thermocouple series circuit (S4); S5 transmission signal; S6 compensation feed signal; S7 compensation supply signal; S9 multiplied transmission signal; S10 filter output signal; S14 amplified filter output signal; SdT state of the art; SI1 first silicidation; SI2 second silicidation; SI3 third silicidation; SI4 fourth silicidation; SI5 fifth silicidation; SI6 sixth silicidation; SI7 seventh silicidation; SI8 eighth silicidation; SI9 ninth silicidation; SI10 tenth silicidation; SI11 eleventh silicidation; SI12 twelfth silicidation; SI13 thirteenth silicidation; SI14 fourteenth silicidation; SI15 fifteenth silicidation; SI16 sixteenth silicidation; SI17 seventeenth silicidation; SI18 eighteenth silicidation; SI19 nineteenth silicidation; SI20 twentieth silicidation; SI21 twenty-first silicidation; SUB1 first substrate; SUB2 second substrate; SUB3 third substrate; SUB4 fourth substrate; SUB5 fifth substrate; TC1 first thermocouple; TC11 first thermocouple (TC11) of the first thermocouple (TC1); TC12 second thermocouple (TC12) of the first thermocouple (TC1); TC2 second thermocouple; TC21 first thermocouple (TC21) of the second thermocouple (TC2); TC22 second thermocouple (TC22) of the second thermocouple (TC2); TC3 third thermocouple; TC31 first thermocouple (TC31) of the third thermocouple (TC3); TC32 second thermocouple (TC32) of the third thermocouple (TC3); TC4 fourth thermocouple; TC41 first thermocouple (TC41) of the fourth thermocouple (TC4); T42 second thermocouple (TC42) of the fourth thermocouple (TC4); TC5 fifth thermocouple; TC51 first thermocouple (TC51) of the fifth thermocouple (TC5); TC52 second thermocouple (TC52) of the fifth thermocouple (TC5); TE1 first thermocouple; TE2 second thermocouple; TE3 third thermocouple; TE4 fourth thermocouple; TE5 fifth thermocouple; TE6 sixth thermocouple; TE7 seventh thermocouple; TE8 eighth thermocouple; TE9 ninth thermocouple; TE10 tenth thermocouple; TE11 eleventh thermocouple; TE12 twelfth thermocouple; TE13 thirteenth thermocouple; TE14 fourteenth thermocouple; TE15 fifteenth thermocouple; TE16 sixteenth thermocouple; TE17 seventeenth thermocouple; TE18 eighteenth thermocouple; TE19 nineteenth thermocouple; TE20 twentieth thermocouple; TE21 twenty-first thermocouple; TE22 twenty-second thermocoupleTP1 first thermopile (TP1); TP1P1 first connection pad (TP1P1) of the first thermopile (TP1); TP1P2 second connection pad (TP1P2) of the first thermopile (TP1); TP2 second thermopile(TP2); TP2P1 first connection pad (TP2P1) of the second thermopile (TP2); TP2P2 second connection pad (TP2P2) of the second thermopile (TP2); UT temperature dependent voltage; UH adjustable voltage; UK third voltage; UTP1 first voltage; UTP2 second voltage; V Preamplifier; VN post-amplifier; W1 first tub; List of cited writings

[0457] US 9 349 933 B2 US 6 329 696 B1 DE 10 2014 013 482 B4 DE 10 2015 015 389 A1 DE 10 2017 100 308 B3 EP 1913420 B1 EP 2,817,657 B, DE 10,001,955 A1, DE 10,001,943 C1, DE 10 346 741 B3, EP 2 936 201 A1, WO 2007 012 502 A1, EP 1 671 160 A1, EP 1 410 507 A1, EP 1 435 509 A1, EP 1 269 929 A1, EP 1 258 084 A, EP 1 480 015 A1, EP 1 579 307 B1, DE 10 2005 045 993 B4, EP 0 706 648 A1, EP 2 016 480 A2, EP 2 783 232 B1, OF 11 2013 002 097 A5, EP 2 679 982 A1, DE 10 2013 013 664 B3, DE 10 2012 010 627 A1, DE 10 2013 019 660 A1, DE 10 2013 000 376 A1, EP 2 405 283 B1, DE 10 2015 002 271 A1, DE 10 2015 006 174 B3, DE 10 2014 019 172 A1, DE 10 2015 015 389 A1, DE 10 2017 100 308 B3, DE 10 2017 100 306 A1

Claims

[1] Thermopiles, with at least one first, in particular metal-layer-free, thermocouple, wherein the thermocouple comprises a first thermoelement (TE1) and wherein the thermocouple comprises a second thermocouple (TE2) and wherein the first thermocouple (TE1) and the second thermocouple (TE2) are, except for a possible Doping comprise the same material and / or are made of the same material and wherein the first thermocouple (TE1) and the second thermocouple (TE2) are connected by an electrically conductive connection are electrically connected to each other and where the electrically conductive connection - an electrically conductive, in particular silicided compound of the material of the first thermocouple (TE1) mixed with another type of atom and - an electrically conductive, in particular silicided compound of the material of the second thermocouple (TE2) mixed with another type of atom and wherein the material of the first thermocouple (TE1) and the second thermocouple (TE2) is polycrystalline silicon and wherein the electrically conductive connection from the electrically conductive connection of the material of the first thermocouple (TE1) and the second thermocouple (TE2) with further atom types comprises an electrically conductive silicide and wherein the electrically conductive connection comprises the electrically conductive connection of the material of the first thermocouple (TE1) and the second thermocouple (TE2) with further atomic types titanium silicide and / or tungsten silicide and / or cobalt silicide and / or nickel silicide and / or another electrically conductive silicide and wherein the possible doping of the first thermocouple (TE1) is of a first doping type and wherein the possible doping of the second thermocouple (TE2) is of a second doping type and where the first doping type is a p-doping or an n-doping and wherein the second doping type is an n-doping if the first doping type is a p-doping and wherein the second doping type is a p-doping if the first doping type is an n-doping and wherein the silicide electrically connecting the first thermocouple (TE1) and the second thermocouple (TE2) to each other is in the same layer plane of a CMOS stack as the first thermocouple (TE1) and the second thermocouple (TE2), characterized in that Thermocouples of the same doping are arranged directly next to each other, and, that the connection points of the thermopile for electrical connection to other electronic components comprise electrically conductive silicide.

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