TRANSISTOR ELEMENT WITH GATE ELECTRODES AND FIELD ELECTRODES

Abstract

Transistor component that features: several gate electrodes (21) and several field electrodes (31), wherein one of the several gate electrodes (21) and one of the several field electrodes (31) are arranged one above the other in a vertical direction in a common trench (10) of a semiconductor body (100); a gate pad (51) to which the multiple gate electrodes (21) are connected; and a source metallization (41) arranged above the semiconductor body (100), wherein the multiple field electrodes (31) comprise a first group of field electrodes, wherein the field electrodes of the first group have at least one contact section (34), wherein at least one contact section (34) is arranged between two sections (211, 212) of a gate electrode (21) arranged in the same trench and is connected to the source metallization, wherein the two sections (211, 212) of the gate electrode (21) are separated from each other in the area of ​​the contact section (34), wherein at least one of the two sections (211, 212) of the gate electrode (21) arranged in the same trench is electrically connected via a gate connection electrode (241, 242; 24) to a gate electrode (21) arranged in a further trench, and wherein the gate connection electrode (24) is arranged in a further trench of the semiconductor body (100).

Description

[0001] This description relates to a transistor device with gate electrodes and field electrodes arranged in common grooves of a semiconductor body.

[0002] A power transistor device, such as a power MOSFET (Metal Oxide Semiconductor Field-Effect Transistor), can have multiple gate electrodes, each located in a trench of a semiconductor body and connected to a common gate node. Below the gate electrodes, field electrodes can also be located in the same trenches and connected to a source electrode positioned above the semiconductor body. To connect the field electrode to the source electrode, the field electrodes can have terminals extending upwards towards the source electrode, with each terminal dividing the gate electrode above it into two electrode sections.

[0003] Typically, each field electrode has multiple connection areas to connect it to the source electrode with the lowest possible resistance. This divides the gate electrode into several electrode sections, each of which must be connected to the gate node. For this purpose, several conductors (usually called gate fingers) can be provided above the semiconductor body and connected to the gate node (gate pad). However, providing these gate fingers requires a corresponding structuring of the source electrode, i.e., implementing the source electrode with multiple electrode sections to ensure separation of the gate fingers from the source electrode.Furthermore, active areas such as source areas cannot usually be provided below the gate fingers, which means that the provision of gate fingers reduces the active component area for a given area of ​​the semiconductor body.

[0004] German patent DE 10 2018 114 591 A1 describes a transistor device with multiple gate electrodes and multiple field electrodes, each arranged one above the other in grooves of a semiconductor body. The field electrodes have contact sections that divide the gate electrodes into several subsections and are connected to a source metallization. Each individual gate electrode subsection is connected to a gate runner, which is located above the semiconductor body and is insulated from the source metallization.

[0005] DE 10 2015 108 440 B3 and DE 10 2016 105 038 A1 each describe a transistor device with several gate electrodes and several field electrodes, which are arranged one above the other in grooves of a semiconductor body. Each of the field electrodes has a contact section that extends adjacent to a longitudinal end of the gate electrode arranged in the same groove to a terminal electrode located on the surface of the semiconductor body.

[0006] The invention relates to a transistor device. This transistor device comprises several gate electrodes and several field electrodes, wherein one of the several gate electrodes and one of the several field electrodes are arranged vertically one above the other in a common groove of a semiconductor body, a gate pad to which the several gate electrodes are connected, and a source metallization arranged above the semiconductor body. The several field electrodes comprise a first group of field electrodes, wherein the field electrodes of the first group have at least one contact section, the at least one contact section being arranged between two sections of a gate electrode arranged in the same groove and being connected to the source metallization.The two sections of the gate electrode are separated from each other in the region of the contact section, and at least one of the two sections of the gate electrode arranged in the same trench is electrically connected via a gate connection electrode to a gate electrode arranged in a further trench, the gate connection electrode being arranged in a further trench of the semiconductor body.

[0007] Examples are explained below using drawings. The drawings serve to illustrate certain principles, so only aspects necessary for understanding these principles are shown. The drawings are not to scale. Fig. Figure 1 schematically shows a top view of a transistor device having multiple gate electrodes; Fig. 2 and Fig. Figure 3 shows variations of the component according to Fig. 1; Fig. Figure 4 schematically shows a vertical cross-sectional view of a section of a field electrode and a gate electrode of the transistor device in an area where the field electrode has a contact section; Fig. Figure 5 schematically shows a horizontal cross-sectional view of a gate electrode interrupted by a contact section of a field electrode, wherein sections of the interrupted gate electrode are connected to each other by connecting electrodes and an adjacent gate electrode; Fig. Figure 6 schematically shows a horizontal cross-sectional view of an example of a field electrode arrangement, which is located below the arrangement with the two gate electrodes according to Fig. 5 is arranged; Fig. Figure 7 schematically shows a horizontal cross-sectional view of another example of a field electrode arrangement, which is located below the arrangement with the two gate electrodes according to Fig. 5 is arranged; Fig. Figures 8A - 8C schematically show different cross-sectional views of an example of a transistor device with multiple gate electrodes and multiple field electrodes, wherein one gate electrode and one field electrode are arranged in a common trench; Fig. Figure 9 shows a variation of the one in Fig. 5 of the illustrated component; Fig. Figure 10 shows another variation of the Fig. 5 of the illustrated component; Fig. Figure 11 schematically shows a horizontal cross-sectional representation of several adjacent gate electrodes, some of which are interrupted by contact sections of field electrodes; Fig. Figure 12 shows another example of adjacent gate electrodes in the vicinity of contact sections of field electrodes; Fig. Figure 13 shows a variation of the one in Fig. 12 arrangement shown; and Fig. Figures 14A-14B, 15A-15B, 16, 17 and 18 illustrate further examples of the realization of contact sections of field electrodes and of connecting individual sections of gate electrodes that are interrupted by one or more contact sections.

[0008] In the drawings, the same reference symbols denote the same features.

[0009] Fig. Figure 1 schematically shows a top view of a transistor device according to an example. This transistor device comprises several gate electrodes 21, each arranged in a groove of a semiconductor body 100, a gate pad 51 to which the gate electrodes 21 are electrically connected, and a source metallization (often also referred to as a source pad) 41. The gate pad 51 and the source metallization 41 are shown in the Fig. The gate electrodes 21 are arranged above a first side (which can also be referred to as the first main side or front side) of the semiconductor body 100, as shown in the example in Figure 1. The gate electrodes 21 can each be designed as elongated electrodes whose longitudinal direction corresponds, for example, to a first lateral direction x of the semiconductor body 100. The source electrode 41 can be arranged as shown in Figure 1. Fig. 1 is shown, arranged above the gate electrodes 21, wherein the gate electrodes 21 extend in their longitudinal direction beyond the source electrode 41 and can be connected to the gate pad 51 in the areas where they extend beyond the source electrode 41.

[0010] To connect the gate electrodes 21 to the gate pad 51, the transistor device according to one example comprises at least one gate runner 52, which is arranged above such regions of the gate electrodes 51 in which the gate electrodes 21 extend beyond the source metallization 41. The gate runner 52 can be connected to the gate electrodes 21 via electrically conductive vias that extend in a vertical direction z of the semiconductor body 100 from the gate runner 52 to the gate electrodes 21. The vertical direction z of the semiconductor body 100 is a direction perpendicular to the one in Fig. The vias run in the depicted drawing plane as shown in section 1. Fig. 1 not visible, the position of these vias is illustrated by points on the Gaterunner 52.

[0011] Insulating or passivation layers may be present between the gate electrodes 21 and the gate runner 52, through which the electrically conductive vias extend. Such insulating or passivation layers are in Fig. 1 not shown. The dotted representation of the gate electrodes 21 in Fig. 1 takes into account that such layers may be present, which means that the gate electrodes 21 are not visible when looking down at the gaterunner 52.

[0012] The gaterunner 52 is arranged at a distance from the source metallization 41, with an insulating layer (not shown) optionally present between the gaterunner 52 and the source metallization 41. The gaterunner 52 and the source metallization 41 can be fabricated from the same metallization layer, which is deposited over the entire surface and structured to form the source metallization 41 and the gaterunner 52.

[0013] At the in Fig. In the example shown in 1, the transistor device comprises a single gate runner 52 extending from the gate pad 51 along one side of the source metallization 41. However, this is only one of several possible implementations. According to another example shown in Fig. As shown in Figure 2, the transistor component comprises a gate runner 52 with two sections, each connected to the gate pad 51 and extending along opposite sides of the source metallization 41. In this example, the gate electrodes 21 extend beyond the source metallization 41 on the two opposite sides along which the gate runners 52 extend. The gate electrodes 21 are connected at each of their longitudinal ends to one of the two gate runners 52. The connection of the gate runners 52 to the gate electrodes 21 is achieved, for example, by means of electrically conductive vias that extend downwards from the gate runners 52 in a vertical direction along the semiconductor body 100, as already described in connection with Fig. 1 was explained.

[0014] In the example according to Fig. In Figure 1, the gate pad 51 is located in the region of a corner of the semiconductor body 100. The gate runner 52 is elongated in this example and extends in its longitudinal direction in a second lateral direction y of the semiconductor body 100, where the second lateral direction y is perpendicular to the first lateral direction x. However, this is only an example. As in the example according to Figure 1, the following applies: Fig. 2, in which the gate pad 51 is arranged between two corners of the semiconductor body 100 and the gate runners 52 are angled in plan view and run around the corner, could also be used in the example according to Fig. 1. The gatepad should be positioned at a distance from the corners and an angled Gaterunner 52 should be used.

[0015] Fig. Figure 3 shows a variation of the one in the Fig. 1 and Fig. The transistor components shown in the diagram are shown below. The transistor component shown below is shown below. Fig. 3 A gaterunner 52 is present, which runs in a ring shape around the source metallization 41 and is connected to the gate pad 51 at two points. As with the transistor component according to Fig. 2 The gaterunner 52 contacts the gate electrodes 21 at opposite longitudinal ends of the gate electrodes 21.

[0016] As in the examples according to the Fig. As shown in Figures 1 to 3, the source metallization 41 can be a large-area metallization located above a region of the semiconductor body 100 that comprises the so-called cell field of the transistor device. Active device regions, such as source and body regions, are located within this cell field, as will be explained below. The source metallization 41 can, for example, cover an area that lies within 70% to 95% of the total area of ​​the semiconductor body 100.

[0017] The transistor device also comprises several field electrodes 31, wherein one of the several gate electrodes 21 and one of the several field electrodes 31 are arranged one above the other in a common groove of the semiconductor body 100 in the vertical direction z of the semiconductor body. This is for one of the gate electrodes 21 and one of the field electrodes 31 in Fig. 4 shown schematically.

[0018] Fig. Figure 4 shows a vertical sectional view of a section of the transistor device in a vertical section plane AA, which extends in the first lateral direction x and the vertical direction z and intersects a gate electrode 21 and a field electrode 31 below it. As in Fig. As shown in Figure 4, the field electrode 31 is insulated from the semiconductor body 100 by a first insulating layer 32, which is also referred to below as the field electrode insulating layer or field electrode dielectric layer. Furthermore, the field electrode 31 is insulated from the gate electrode 21 within the trench by a second insulating layer 33.

[0019] Referring to Fig. The field electrode 31 also includes a contact section 34, via which the field electrode 31 is connected to the source metallization 41. The contact section 34 extends vertically z from the field electrode 31 through the gate electrode 21, thus dividing the gate electrode 21 into two separate gate electrode sections 211 and 212. The contact section 34 is insulated from the gate electrode 21 by a third insulating layer 23. The first, second, and third insulating layers 32, 33, and 23 each comprise, for example, an oxide, a nitride, or similar material.

[0020] The contact section 34 of the field electrode 31 is electrically connected to the source metallization 41. In the case of the Fig. In the example shown in Figure 4, the source metallization 41 is connected to the contact section 34 via an electrically conductive via 43, which extends vertically z from the source metallization 41 through a further insulating layer 42 to the contact section 34. The further insulating layer 42 electrically isolates the gate electrode 21 from the source metallization 41.

[0021] Both in the case of a transistor component according to Fig. 1, in which the gate electrodes 21 are connected to the gate runner 52 only at one longitudinal end, as well as in the transistor components according to the Fig. 2 and Fig. In 3, where the gate electrodes 21 are connected to the gate pad 51 at both opposite longitudinal ends via one or two gaterunners 52, it may be desirable to electrically connect the two gate electrode sections 211, 212, separated by the contact section 34 of the field electrode 31, below the source metallization 41. An example of how the two gate electrode sections 211, 212, separated by the contact section 34, can be electrically connected is shown in Fig. 5 shown.

[0022] Fig. Figure 5 shows a horizontal sectional view of the transistor device in a section plane BB in the region of the contact section 34. This section plane BB extends in both horizontal directions x, y, and thus parallel to the front face of the semiconductor body 100, and intersects the gate electrodes 21 in the section shown. As in Fig. Figure 5 shows the two sections 211 and 212 of the gate electrode 21, which is subsequently also referred to as the gate electrode 21 interrupted in its structure. U The gates are electrically connected via gate connection electrodes 241, 242 and at least one gate electrode 21 arranged in a further trench. This further trench can be adjacent to the trench containing the structurally interrupted gate electrode 21u and is hereinafter also referred to as the adjacent trench. The gate electrode arranged in this further trench is hereinafter also referred to as the further gate electrode or adjacent gate electrode 21. N The interrupted gate electrode 21u and the other gate electrode 21 N According to one example, they extend parallel to each other and in the same direction.

[0023] The gate electrodes 21 are each insulated from the semiconductor body 100 by a gate dielectric 22, which will be explained below. The gate connection electrodes 241, 242 are insulated from the semiconductor body by insulating layers 25 and are electrically conductive to the gate electrode sections 211, 212 of the interrupted gate electrode 21u and the adjacent gate electrode 21 N connected, wherein a first gate connection electrode 241 is connected to the first section 211 of the interrupted gate electrode 21u, and thus this first section 211 to the adjacent gate electrode 21 N connects, and a second gate connection electrode 242 to the second section 212 of the interrupted gate electrode 21 U is connected, and thus the second section 212 to the adjacent gate electrode 21 Nconnects. The two sections 211, 212 of the interrupted gate electrode 21u are thus connected by the two gate connecting electrodes 241, 242 and the section of the adjacent gate electrode 21 arranged between the two gate connecting electrodes 241, 242. N interconnected by conductive pathways.

[0024] At the in Fig. In the variant shown in Figure 5, in which the gate connection electrodes 241, 242 are arranged in trenches, the field electrode 31, which is arranged below the interrupted gate electrode 21u, and the field electrode 31, which is located below the adjacent gate electrode 21, can be N is arranged, are electrically connected to each other by corresponding field electrode connecting electrodes 351, 352, as shown in Fig. 6 is shown.

[0025] Fig. Figure 6 shows a horizontal sectional view of the [unclear text]. Fig. 5 section of the transistor component shown in a Fig. 4 section plane CC shown, which intersects the field electrodes 31 below the interrupted gate electrode 21 U and the adjacent gate electrode 21 N are arranged. In the case of the Fig. In the example shown in Figure 6, a corresponding field electrode connection electrode 351, 352 is present below each trench in which one of the gate connection electrodes 241, 242 is located. However, this is only one example. In principle, a single field electrode connection electrode is sufficient to electrically connect the two adjacent field electrodes 31, so that, according to one example (not shown), only one of the two field electrode connection electrodes 351, 352 is present.

[0026] A connection of adjacent field electrodes 31 by connecting electrodes 351, 352, which are arranged below the gate connecting electrodes 241, 242, as shown in Fig. Figure 6 is, however, only one example. According to another example, which is shown in Fig. As shown in 7, it is also possible to use only the interrupted gate electrode 21u and the adjacent gate electrode 21. N to connect them together, but not also those under these gate electrodes 21 U , 21 N arranged field electrodes 31.

[0027] Fig. Figure 7 shows a cross-sectional view of the in Fig. Figure 5 shows the section of the transistor component in the section plane CC for an example where the field electrodes 31 are below the gate electrodes 21. U , 21 Nare not connected to each other. These two field electrodes 31 are (a) either connected to each other at another location via connecting electrodes, each of which runs transversely to the longitudinal directions of the field electrodes 31, or (b) not connected to each other by connecting electrodes within the semiconductor body, and thus only via one or more contact sections of the Fig. The gate-connecting electrodes 24 of the type shown are connected to the source metallization 41. According to one example, the gate-connecting electrodes 24 can be arranged such that all trenches in which gate electrodes 21 are arranged are crossed, as in the following explanations. Fig. Figures 14A-15B are shown. Typically, the semiconductor body 100 comprises a multitude of trenches, for example more than 500 trenches, with gate electrodes 21 arranged therein.

[0028] According to one example, the transistor device in the semiconductor body 100 also comprises several source regions 11, several body regions 12, at least one drift region 13, and at least one drain region 14. An example of how these device regions, which can also be referred to as active device regions, are arranged within the semiconductor body 100 is shown in the Fig. 8A - 8C shown.

[0029] The Fig. Figures 8A - 8C illustrate a section of the transistor component in a vertical section plane II, which runs perpendicular to the longitudinal directions of the gate electrodes 21 and the field electrodes 31 ( Fig. 8A), in the previously explained first horizontal section plane BB, which intersects the gate electrodes 21, ( Fig. 8B) and in the second horizontal section plane CC, which intersects the field electrodes 31, already explained previously, ( Fig. 8C),

[0030] Referring to Fig. In 8A, the drift region 13 is arranged adjacent to the field electrodes 31 and is dielectrically isolated from the field electrodes 31 by the field electrode dielectrics 32. The body regions 12 are adjacent to the drift region 13, are arranged adjacent to the gate electrodes 21, and are dielectrically isolated from the gate electrodes 21 by gate dielectrics 22. The source regions 11 are adjacent to the body regions 12 and are separated from the drift region 13 by the body regions 12. The at least one drain region 14 is arranged vertically spaced from the body regions 12 in the direction of the semiconductor body 100, with the drift region 13 being located between the body regions 12 and the drain region 14. The drain region 14 can be adjacent to the drift region 13, as shown in Fig. Figure 8A is shown. Optionally, a field stop region (not shown), which is of the same conductor type as the drift region 13 and is doped to a higher degree than the drift region 13, is arranged between the drain region 14 and the drift region 13. The transistor device according to Fig. 8A, in which the source regions 11 are spaced vertically from the drain region of the semiconductor body 100, can also be called a vertical transistor.

[0031] The drift region 13 is of a first transmission line type (n-type or p-type), and the body regions 12 are of a second transmission line type (p-type or n-type) complementary to the first transmission line type, such that a pn transition is formed between the body regions 12 and the drift region 13. The source regions 13 are of the same transmission line type as the drift region 13.

[0032] The transistor device can be implemented as an n-type or p-type transistor device. In an n-type transistor device, the domains of the first doping type are n-doped, and the domains of the second doping type are p-doped. In a p-type transistor device, the domains of the first doping type are p-doped, and the domains of the second doping type are n-doped. The transistor device can be implemented as a MOSFET. In this case, the drain domain 14 has the same doping type as the drift domain 13 and the source domains 11. According to another example, the transistor device is implemented as an IGBT. In this case, the drain domain 14 is doped complementarily to the drift domain 13 and the source domains 11.

[0033] The semiconductor body 100 can comprise a conventional (monocrystalline) semiconductor material, such as silicon (Si), silicon carbide (SiC), gallium arsenide (GaAs), or gallium nitride (GaN). As an example, the semiconductor body 100 comprises monocrystalline silicon. The doping concentrations of the individual device regions in this case are, for example, within the doping ranges specified below: Source regions 11: 1E19 cm⁻¹ -3 - 1E21 cm -3 ; Body areas 12: 1E17 cm -3 - 1E18 cm -3 ; Drift area 13: 1E15 cm -3 - 5E17 cm -3 ; Drainage area 14: 1E19 cm -3 - 1E20 cm -3 .

[0034] As in Fig. As shown in Figure 8A, the source regions 11 are connected to the source metallization 41 via connection contacts 44, which can also be referred to as source vias. These connection contacts 44 extend from the source metallization 41 through the insulating layer 42 to the source regions 11 or into the source regions 11. As shown in Fig. As shown in Figure 8A, the body regions 12 can also be connected to the source metallization 41. This can be achieved, for example, by extending the connection contacts 44 through the source regions 11 in a vertical direction of the semiconductor body 100 into the body regions 12, as shown in Figure 8A. Fig. 8A is shown. The body areas 12 can form a contact area in the region where they are contacted by the connecting contacts 44. Fig. 8A not shown) which is more highly doped than other sections of the body regions 12, wherein the contact area serves to establish an ohmic contact between the terminal contacts 44 and the body regions 12.

[0035] As in Fig. As shown in Figure 8B, the connection contacts 44 can be elongated contacts running parallel to the longitudinal directions of the gate electrodes 21. According to another example, also shown in Fig. As shown in Figure 8B, each source metallization 41 can be connected to the source metallization 41 via multiple connection contacts 44, these multiple connection contacts 44 being spaced apart from each other in the longitudinal direction of the source regions 11. The longitudinal direction of the source regions 11 corresponds to the longitudinal direction of the gate electrodes 21.

[0036] The gate electrodes 21 are connected to the gate pad 51, which forms a gate terminal of the device, as previously described. The drain region 14 forms a drain terminal D (shown schematically only) of the transistor device or is connected to the drain terminal D. The source metallization 41 forms a source terminal S (shown schematically only) or is connected to the source terminal S of the transistor device.

[0037] The transistor device can be driven in the conventional manner by applying a suitable drive voltage between the gate terminal G and the source terminal S, and thus between the gate electrodes 21 and the source regions 11. The device conducts when the drive voltage creates conducting channels in the body regions 12 between the source regions 11 and the drift region 13, and blocks when these conducting channels are open. When the device is driven in conduction, applying a suitable voltage between the drain terminal D and the source terminal S allows a current to flow between these two terminals D and S. The device blocks when, due to the drive voltage, no conducting channels are present in the body regions 12 along the gate dielectrics and a voltage applied between the drain terminal D and the source terminal S reverse-biases the pn junctions between the drift region 13 and the body regions 12.In this case, a space charge region spreads out from the pn junctions, which is associated with the ionization of dopant atoms in the drift region 13. The field electrodes 31, which are connected to source S, partially compensate for the charge carriers caused by ionization in the conventional manner when the device is blocking. This allows the drift region 13 to be more heavily doped compared to a device with the same voltage rating that does not have field electrodes, resulting in a lower on-resistance. The "voltage rating" is the maximum voltage that can be applied between drain D and source S when the device is blocking without voltage breakdown occurring.

[0038] Drift area 13 and drainage area 14 are also included in the previously explained Fig. 4 shown. Fig. 5 are also the source areas 11 and in the Fig. 6 and Fig. Sections 7 of at least one drift area 13 are shown.

[0039] An area of ​​the transistor component in which the interrupted gate electrode 21u (compare Fig. 5) has a contact section 34 in which the gate connection electrodes 241, 242 are arranged, is hereinafter also referred to as the contact area. Fig. Figure 8A shows a cross-section of the transistor device outside such a contact area. As in Fig. As shown in Figure 5, source regions 11 can also be arranged in the contact area, i.e., they can extend in the contact area up to the gate dielectrics 22 and can be arranged between the two gate connection electrodes 241, 242. However, this is only one example.

[0040] According to another example, which is in Fig. As shown in Figure 9, it is also possible to omit the source regions 11 in the contact area, so that the body regions 12 extend to the front face of the semiconductor body in this area. In this case, the source regions 11 are arranged longitudinally along the gate electrodes 21, i.e., spaced apart from the gate connection electrodes 241, 242 in the first lateral direction x of the semiconductor body. Furthermore, in those sections of the contact area that extend in the second lateral direction y to the interrupted gate electrode 21u and the adjacent gate electrode 21, the source regions 11 are also omitted. N Connect, omitting the source regions 11. In the contact area, therefore, there are no connections between the interrupted gate electrode 21u and the adjacent gate electrode 21. N and between the interrupted gate electrode 21u and the adjacent gate electrode 21 N and the respective gate electrodes 21 U , 21 NAdjacent gate electrodes 21 no source regions 11 are present.

[0041] Another example, which is in Fig. As shown in Figure 10, the body regions 12 in the contact area are also omitted. In this case, the drift region 13 in the contact area extends to the front face of the semiconductor body 100. To protect the gate electrodes 21 in this area from excessively high voltages when the device is blocking, the gate dielectric 22 in this area can be replaced by an insulating layer 26 that is thicker than the gate dielectric 22 and whose thickness corresponds, for example, to the thickness of the field electrode dielectric 32. This thick insulating layer is shown in Fig. 10 with the reference number 26.

[0042] The Fig. Figures 4-7, 9, and 10 show, for illustrative purposes, only an interrupted gate electrode 21u, a contact section 34 interrupting the gate electrode 21u, and the contact area in which this contact section 34 is located. Several such contact areas can be present within the device, and a field electrode can also be connected to the source metallization 41 via several contact sections 34, so that the gate electrode above it is interrupted at more than one point and thus has more than two gate electrode sections. If n is generally the number of contact sections that a field electrode has, then the gate electrode interrupted by these contact sections comprises n+1 gate electrode sections.

[0043] Several examples are explained below, whereby for the sake of clarity only horizontal cross-sections are shown, depicting the gate electrodes 21, the gate connection electrodes 24, and the contact sections 34. Other areas of the transistor device are not shown in these schematic views.

[0044] According to an example that was in Fig. As shown in Figure 11, it is provided that only every i-th (where i=2 in the example) field electrode 31 has a contact section 34, these contact sections 34 being arranged approximately in a line in the second lateral direction y of the semiconductor body 100. The interrupted gate electrodes 21u are connected via gate connection electrodes 24 and adjacent gate electrodes 21 N connected to each other, whereby in the example according to Fig. 11 alternating interrupted gate electrodes 21u and uninterrupted adjacent gate electrodes 21N are present. In this example, the gate connection electrodes 24 together with the gate electrodes 21 form a conductor-like arrangement, the "rungs" of which are connected by sections of the uninterrupted adjacent gate electrodes 21. N are formed, with the contact sections 34 each being arranged between two “rungs” of the ladder-like arrangement.

[0045] Fig. Figure 12 shows an example in which adjacent field electrodes 31 each have a contact section 341, 342, whereby two immediately adjacent gate electrodes 21 are each interrupted, so that a first gate electrode 21 interrupted by a first contact section 341 U1 having a first gate electrode section 211 and a second gate electrode section 212 and that a second gate electrode 21 U2, which is interrupted by a second contact section 342, has a third gate electrode section 213 and a fourth gate electrode section 214. In this example, the contact sections 341, 342 are arranged offset from each other in the first lateral direction x, such that the first and second gate electrode sections 211, 212 are connected to each other via the parallel third gate electrode section 213 and a first and a second gate connection electrode 241, 242, and the third and fourth gate electrode sections 213, 214 are connected to each other via the parallel second gate electrode section 213 and the second and a third gate connection electrode 242, 243.

[0046] In the example according to Fig. 12 are three gate connection electrodes 241, 242, 243, which run essentially parallel to each other. Of course, in the Fig. In the example shown in Figure 12, instead of the second gate connection electrode 242, two gate connection electrodes can also be provided, which run parallel to each other and are spaced apart from each other in the first lateral direction x. Such an example is shown in Figure 12. Fig. Figure 13 shows the two gate connection electrodes. In this example, Figure 24 represents the two gate connection electrodes. 21 and 24 22 designated.

[0047] Fig. Figure 14A schematically shows a horizontal sectional view of a transistor component, which only includes contact areas of the in Fig. exhibits the type shown in 11, wherein in Fig. In the example shown in Figure 14A, every second field electrode has a contact section 34, so that every second gate electrode 21 is interrupted, or exactly one uninterrupted gate electrode is arranged between two interrupted gate electrodes 21. However, this is only an example. In principle, it is possible to connect only every i-th field electrode 31 to the source metallization 41 via a contact section 34, where i is any integer greater than 1. Fig. Figure 14B shows an example where every third field electrode 31 has a contact section 34 (i.e., i=3), such that every third gate electrode 21 is interrupted, or rather, between two interrupted gate electrodes 21 there are exactly two uninterrupted gate electrodes.

[0048] However, it is understood that the field electrodes that are not connected to the source metallization 41 via a contact section 34 can nevertheless be electrically connected to the source metallization 41. Those field electrodes that, in the examples according to the Fig. 14A and Fig. 14B do not have a contact section 34, for example via connecting electrodes 351, 352, as shown in Fig. Figure 6 shows that the field electrodes 31 are connected to adjacent field electrodes 31, which are connected to the source metallization 41 via a contact section 34. Naturally, the number i within the component can also vary. That is, the number of continuous gate electrodes arranged between two interrupted gate electrodes can differ for different pairs of adjacent interrupted gate electrodes. Thus, for example, in certain sections every second field electrode 31, in certain sections every third field electrode 31, or in other sections only every fourth field electrode 31 can have a contact section 34.

[0049] Fig. Figure 15A schematically shows a horizontal sectional view of a transistor component, which only contains contact areas of the in Fig. 12 of the type shown and Fig. Figure 15B schematically shows a sectional view of a transistor component, which only contains contact areas of the in Fig. exhibits the type shown in 13.

[0050] Based on the Fig. In the examples shown in 14A-15B, each field electrode 31 comprises a maximum of one contact section 34. However, as explained previously, this is only one example. Fig. Figure 16 shows an example of a transistor component in which several field electrodes each comprise two contact sections.

[0051] In the Fig. In the example shown in Figures 14A-16, the contact areas are regularly distributed across the device. However, this is only one example. (a) The number j of contact sections comprising each field electrode 32 can be chosen arbitrarily for each field electrode within the device. Thus, within a device, there can be, for example, one or more field electrodes without a contact section (j=0), one or more field electrodes with exactly one contact section (j=1), or one or more field electrodes with exactly two contact sections (j=2). (b) Furthermore, the longitudinal positions of the contact sections 34 on the individual field electrodes 32 can also be chosen arbitrarily. An example of a device with a varying number of contact sections 34 per field electrode and with varying positioning of the contact sections 34 along the longitudinal directions of the individual field electrodes 32 is shown in Figure 14A-16. Fig. Figure 17 shows the contact sections 34. In this example, the contact sections are arranged in an arbitrary "scattered" manner.

[0052] In the examples described above, two gate electrode sections of a discontinuous gate electrode are electrically connected to each other via two gate connection electrodes and a section of an adjacent gate electrode, with each of the gate electrode sections being connected to one of the respective gate connection electrodes, and both gate connection electrodes being electrically connected to the section of the adjacent gate electrode. This connection of the two gate electrode sections of a discontinuous gate electrode via two gate connection electrodes and a section of an adjacent gate electrode can occur regardless of whether the two gate electrode sections are directly connected to the gate runner, i.e., in the region of a longitudinal end.

[0053] The examples are based on the Fig. 14A - 15B, in which the individual gate electrodes are subdivided into a maximum of two gate electrode sections, a Gaterunner 52 is provided, as described in the Fig. 2 and Fig. As shown in Figure 3, which contacts the individual gate electrodes at opposite ends, each gate electrode section is directly connected to the gate runner. However, it is also useful to connect the gate electrode sections via gate connection electrodes and sections of one or more adjacent gate electrodes to ensure that all sections of the individual gate electrodes are connected to the gate runner with the lowest possible resistance.

[0054] According to another example, of two gate electrode sections of a broken gate electrode, only one is connected via a gate connection electrode to an adjacent gate electrode or a section of an adjacent gate electrode, while the other is connected to the gate runner. An example of such a transistor device is shown in Fig. 18 shown.

[0055] The component according to Fig. 18 is a variation of the one in Fig. The component shown in Figure 14A. In this component, of two gate electrode sections of an interrupted gate electrode, only one is connected to an adjacent gate electrode, whereby this connection of the gate electrode section to the adjacent gate electrode can be made (a) to connect the respective gate electrode section to the gate runner via the adjacent gate electrode (if the respective gate electrode section is not directly connected to the gate runner), or (b) to additionally connect the respective gate electrode section to the gate runner via the adjacent gate electrode (if the respective gate electrode section is already directly connected to the gate runner).

[0056] As in the Fig.As shown in Figures 1 to 3, the gate pad 51 and the source metallization 41 can be arranged above the same side of the semiconductor body 100. This is, however, only one example. According to another example (not shown), the source metallization is arranged in the region of a first side of the semiconductor body, and the gate pad is arranged in the region of a second side opposite the first side. A drain metallization contacting the drain region can also be arranged in the region of the second side. In this case, the gate runner can be implemented in the same way as previously described, i.e., it can be arranged in the region of the first side of the semiconductor body and is connected to the gate pad via at least one electrically conductive via extending through the semiconductor body.

[0057] It should also be noted that in the illustrated embodiments, gate finger structures are not required, since the gate electrodes no longer necessarily need to be interrupted to allow contact with the field electrodes. This saves chip area and enables more cost-effective manufacturing. The source metallization 41 can thus be arranged without interruption in an area encompassing the active cell field, while the gate electrodes 21 remain continuously electrically connected in a region below the source metallization.

Claims

[1] Transistor component that features: several gate electrodes (21) and several field electrodes (31), wherein one of the several gate electrodes (21) and one of the several field electrodes (31) are arranged one above the other in a vertical direction in a common trench (10) of a semiconductor body (100); a gate pad (51) to which the multiple gate electrodes (21) are connected; and a source metallization (41) arranged above the semiconductor body (100), wherein the multiple field electrodes (31) comprise a first group of field electrodes, wherein the field electrodes of the first group have at least one contact section (34), wherein at least one contact section (34) is arranged between two sections (211, 212) of a gate electrode (21) arranged in the same trench and is connected to the source metallization, wherein the two sections (211, 212) of the gate electrode (21) are separated from each other in the area of ​​the contact section (34), wherein at least one of the two sections (211, 212) of the gate electrode (21) arranged in the same trench is electrically connected via a gate connection electrode (241, 242; 24) to a gate electrode (21) arranged in a further trench, and wherein the gate connection electrode (24) is arranged in a further trench of the semiconductor body (100). [2] Transistor device according to claim 1, in which each of the two sections (211, 212) of the gate electrode (21) arranged in the same trench is electrically connected to the gate electrode (21) arranged in the further trench via a respective gate connecting electrode (241, 242; 24), so that the two sections (211, 212) are electrically connected to each other via the respective gate connecting electrodes (241, 242; 24) and the gate electrode (21) arranged in the further trench. [3] Transistor device according to claim 1 or 2, where the trenches with the gate electrodes run at least approximately parallel and in which the at least one gate connection electrode (24) runs at least approximately perpendicular to a longitudinal direction of the trenches (10). [4] Transistor device according to one of claims 1 to 3, wherein each of the multiple field electrodes (31) has at least one contact section (34). [5] Transistor device according to one of claims 1 to 3, wherein at least one of the field electrodes (31) has no contact section and is connected via at least one further connecting electrode (351, 352) to at least one of the several field electrodes (31) which has at least one contact section (34). [6] Transistor device according to claim 5, insofar as it is directly or indirectly related to claim 3, wherein the at least one further connecting electrode (351, 352) and one of the gate connecting electrodes (24) are arranged in a common trench. [7] Transistor device according to one of the preceding claims, in which at least one of the field electrodes (31) has several contact sections (34) which are spaced apart from each other in a longitudinal direction of the field electrode (31). [8] Transistor device according to one of the preceding claims, further comprising: a gaterunner (52) via which the multiple gate electrodes (21) are connected to the gate pad (51). [9] Transistor device according to claim 6, wherein the gate runner (52) has at least one section which is connected to the respective gate electrode (21) in the region of at least one longitudinal end of each gate electrode (21). [10] Transistor device according to claim 8 or 9, wherein the gaterunner (52) a first section which is connected to the respective gate electrode (21) in the region of a first longitudinal end of each gate electrode (21), and a second section which is connected to the respective gate electrode (21) in the region of a second longitudinal end of each gate electrode (21), where the second longitudinal end is opposite the first longitudinal end. [11] Transistor device according to one of claims 8 to 10, wherein the gaterunner (52) is arranged spaced apart from the source metallization (41). [12] Transistor device according to one of claims 8 to 11, wherein the gaterunner (52) and the source metallization (41) are formed based on the same metallization. [13] Transistor device according to one of the preceding claims, wherein the source metallization (41) is a single continuous electrode. [14] Transistor device according to one of the preceding claims, further comprising: at least one drift region (13) of a first doping type, which is arranged adjacent to and isolated from the field electrodes (31); several body regions (12) of a second doping type, each of which is adjacent and isolated to at least one of the several gate electrodes (21); several source regions (11) of the first doping type, each adjacent to one of the several body regions (12), connected to the source metallization (41) and separated from the drift region (13) by the adjacent body region (12); and at least one drainage area (14) which is spaced apart from the multiple body areas (12), wherein the at least one drift area (13) is arranged between the at least one drainage area (14) and the multiple body areas (12). [15] Transistor device according to claim 14, in which the gate connection electrode (24) is insulated from the semiconductor body (100) by an insulating layer (25), and in which the source areas (11) are arranged at a distance from the isolation layer (25). [16] Transistor device according to claim 15, wherein the body regions (12) are arranged spaced apart from the insulating layer (25) and the drift region (13) extends to the insulating layer (25). [17] Transistor device according to one of the preceding claims, wherein the further trench with gate electrode is a trench immediately adjacent to the trench with the two sections (211, 212). [18] Transistor device according to one of claims 1 to 17, wherein the gate pad (51) and the source metallization (41) are arranged in the region of the same side of the semiconductor body (100). [19] Transistor device according to any one of claims 1 to 17, wherein the gate pad (51) and the source metallization (41) are arranged in the region of opposite sides of the semiconductor body (100).

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