Method and device for mask repair

Abstract

A method for processing an object for lithography comprising: Providing a first gas; Providing a second gas, the second gas comprising second molecules capable of undergoing an inversion oscillation; Providing a particle beam on a working area of the object for generating a deposition material on the working area based at least in part on the first gas and the second gas; wherein the provision of the second gas takes place with a gas flow rate of less than 5 sccm, preferably less than 2 sccm, particularly preferably less than 0.5 sccm; wherein the first gas comprises first molecules comprising a carbonyl compound, and / or wherein the deposition material comprises a chromium nitride, and / or wherein the second molecules comprise H2N-NH2, and / or wherein the second molecules comprise nitrogen and a halogen in a chemical compound, and / or the second molecules have a lower absorption probability in the working area than NO2 molecules.

Description

1. Technical FieldThe present invention relates to methods, apparatus and computer program for processing an object for lithography. In particular, the present invention relates to a method for producing a deposition material, a method for passivating a surface material, a corresponding apparatus, as well as a method for lithographic processing of a wafer, and a computer program for executing the methods.2. Prior ArtIn the semiconductor industry, increasingly smaller structures are being produced on a wafer in order to ensure an increase in the integration density. For the production of the structures, lithographic methods are used, among other things, which image them on the wafer. The lithographic methods may include, for example, photolithography, ultraviolet (UV) lithography, DUV lithography (i.e., deep ultraviolet (UV) lithography), EUV lithography (i.e., extreme ultraviolet (UV) lithography), X-ray lithography, nanoimprint lithography, etc. In this case, masks are usually used as objects for lithography (e.g. photomasks, exposure masks, reticles, stamps in nanoimprint lithography, etc.), which comprise a pattern in order to image the desired structures on a wafer, for example.As the integration density increases, mask fabrication requirements also increase (e.g., due to the concomitant reduction in feature sizes on the mask or due to the higher material requirements in lithography). The fabrication processes of the masks thus become increasingly complex, time-consuming and cost-intensive, wherein mask defects (e.g. defects, missing material, misformed material, etc.) cannot always be avoided. Usually, the mask defects are therefore corrected or repaired in a further processing process.For example, a mask defect can be repaired via a particle beam-based or particle beam-induced deposition process. This may usually comprise an electron beam or an ion beam induced deposition of a material on a local location in the region of the mask defect. In this case, a deposition gas can be used as precursor gas, which critically defines the composition of the deposited material (i.e. of the repair material).A (repaired) mask may be exposed to high physical as well as chemical stresses during lithography, as well as downstream processes (e.g. during exposure of the mask, mask cleaning, etc.). Therefore, the durability, durability and stability of the repair material against these aggressive influences are of great importance.It is known, for example, to add an additive gas to the deposition gas during the mask processing, which can additionally influence the properties of the repair material.Furthermore, US 2020 / 0 103 751 A1 discloses depositing a material using a first particle beam and at least one deposition gas. The deposition gas may comprise a metal carbonyl, which may comprise chromium hexacarbonyl. The deposition gas may typically be used to replace missing portions of a pattern element of a photomask. Furthermore, at least one additive gas comprising an oxidizing agent can be added to the deposition gas, wherein the oxidizing agent can comprise, for example, oxygen, water vapor or nitrogen dioxide. Further, the additive gas may include a gas having a reducing effect. The gas having the reducing effect may comprise hydrogen, ammonia or methane. Further, an EUV mask is disclosed. One possible material of a buffer layer (buffer layer) of the EUV mask is chromium nitride. The buffer layer is deposited on a capping layer (capping layer), wherein the capping layer protects a multilayer structure (EUV mask). One possible material of an absorption layer of the EUV mask is chromium. One possible material of an antireflection layer of the EUV mask is tantalum oxynitride. Furthermore, a structuring is disclosed, so that structures of absorbing pattern elements are produced which are composed of the buffer layer, the absorption layer and the antireflection layer.DE 10 2013 203 995 A1 relates to a method and an apparatus for protecting a substrate during processing with at least one particle beam. The method comprises the steps of: (a) applying a locally delimited protective layer to the substrate; (b) etching the substrate and / or a layer arranged on the substrate by the particle beam and at least one gas; and / or (c) depositing material on the substrate by the particle beam and at least one precursor gas; and (d) removing the locally delimited protective layer from the substrate.DE 10 2018 217 025 A1 relates to analyzing a substrate, comprising the steps of: (a) depositing at least one sacrificial layer on the substrate and producing at least one reference mark on the sacrificial layer by means of at least one focused particle beam and at least one precursor gas; (b) determining a reference position of the at least one reference mark; and (c) removing the at least one deposited sacrificial layer; (d) wherein the at least one deposited sacrificial layer has a size such that a position of the at least one reference mark can be determined without substantially damaging the substrate.Due to the technical complexity of the particle beam-based deposition process, however, the properties of the repair material are not always optimal.The present invention is therefore based on the object of specifying methods and apparatuses which optimize the processing of objects for lithography.3. SUMMARY OF THE INVENTIONThis object is at least partially achieved by the various aspects of the present invention.A first aspect of the invention relates to a method for processing an object for lithography. The method comprises providing a first gas and providing a second gas, wherein the second gas has second molecules capable of performing an inversion oscillation. Furthermore, the method comprises providing a particle beam on a working region of the object for generating a deposition material on the working region based at least partially on the first gas and the second gas. The provision of the second gas can be effected with a gas flow rate of less than 5 sccm, preferably less than 2 sccm, particularly preferably less than 0.5 sccm.The inventive concept is based on the one hand on the fact that the inversion oscillation of a molecule can significantly influence the generation of the deposition material using a particle beam. Molecules capable of performing an inversion oscillation are also referred to herein as inversion molecules. The invention makes use of the fact that inversion molecules can have a dipole moment μ of zero on average over time. The inversion oscillation may cause the integral of the dipole moment μ of an inversion molecule to be substantially zero over a certain time interval (e.g. the integral of the dipole moment μ may be zero over a time interval comprising one or more oscillation periods; or it may mathematically go towards zero if the time interval is chosen to be infinite). This mechanism can therefore result in inversion molecules having a reduced dipole character, as opposed to molecules that are unable to undergo inversion oscillation. It has been recognized that this reduced dipole character of inversion molecules can have a decisive influence on the interaction of the inversion molecules with a material surface. When producing the deposition material, a complex interaction can take place between the first gas, the second gas and the particle beam, in which the deposition material is produced on a material surface within the working region of the object for lithography. For example, the generation of the deposition material can comprise particle beam induced deposition (e.g. via a mass-loaded particle beam). For the production of the separating material, the properties of the gases within the working region or in the environment of the object are therefore of decisive importance, among other things. These (local) properties of the gases can in this case comprise a (local) gas concentration of the gases within the working region or in the environment of the object. The (local) gas concentration can comprise, for example, the concentration of the first gas, the second gas, and / or gaseous reaction products of the production of the deposition material. Furthermore, the (local) gas concentration may comprise the concentration of different molecules (e.g. a concentration of the second molecules, a concentration of further molecules in the first gas, the second gas and / or the reaction products). Further, the (local) gas concentration described herein may include any gas parameter associated with the first gas, the second gas, and / or the gaseous reaction products (e.g., gas pressure, gas mass flow, etc.).When producing the deposition material, a defined (local) gas concentration is usually required over a certain period of time in order to allow the reaction of producing the deposition material to proceed in a targeted manner, as a result of which the production of defined physical and / or chemical properties of the deposition material is made possible. It can therefore be helpful to configure the defined (local) gas concentration in a targeted manner. The defined (local) gas concentration can be static as well as dynamic. A static (local) gas concentration can thereby comprise that a substantially constant (local) gas concentration can be present or is to be adjusted (e.g. a constant ratio of the concentrations of the first gas, the second gas and / or the reaction products). A dynamic (local) gas concentration can thereby comprise that a dynamic process of the (local) gas concentration is to take place in a targeted manner (e.g. a targeted removal of reaction products, a targeted change between two static (local) gas concentrations, alternating (local) gas concentrations, etc.).However, due to chemical and / or physical interactions in the generation of the deposition material, the defined (local) gas concentration may change to a technically undesirable extent. For example, this may comprise a (local) depletion of the second gas (and / or the first gas) within the working area, such that the process of generating the deposition material is affected in an undesired manner.The inventors have thereby recognized that the use of inversion molecules, which may have the reduced dipole character described herein, may be extremely advantageous in particle beam-based production of a deposition material. This is because the reduced dipole character of inversion molecules can influence the absorption probability of the inversion molecules with respect to a material within the working range. Due to the reduced dipole character, e.g. an absorption probability of the second molecules (i.e. the inversion molecules) of the second gas compared to a material within the working range can acquire an advantageous degree. This advantageous degree of absorption probability cannot be achieved, for example, with molecules which are not capable of performing an inversion oscillation. These molecules that are unable to undergo inversion oscillation are referred to herein as non-inversion molecules. Non-inversion molecules may have a non-zero permanent dipole moment, for example. Non-inversion molecules may further include, for example, polar molecules (such as NO, NO 2, H 2 O) having a non-zero dipole moment. In particular, due to the reduced dipole character, inversion molecules can have a lower degree of absorption probability with respect to a material (within the working range) than non-inversion molecules. Inversion molecules can therefore be absorbed by the material (within the working range) less than non-inversion molecules. Thus, when inversion molecules are used in the second gas, depletion of the second gas in the region of the working region can be minimized. The concentration of the second gas can thereby be increased, or maintained, for example, for a longer time within the working range than when non-inversion molecules are used (exclusively) in the second gas. A technical readjustment of the concentration of the second gas or a consideration of the decrease in concentration of the second gas on account of a high degree of the probability of absorption can thereby be substantially minimized.The use of inversion molecules as second molecules can thus enable optimized conditions in the design of the defined (local) gas concentration during the production of the deposition material, whereby the production of the deposition material can be optimized. Furthermore, this can optimize the production of the defined physical and / or chemical properties of the generated deposition material, since these properties can significantly depend on the (local) gas concentration during the production of the deposition material.The ability of the second molecules to perform an inversion oscillation may be defined by the second molecules being basically capable of performing an inversion oscillation at a particular temperature comprising a temperature greater than zero Kelvin. For example, this may be defined by the second molecules of the second gas being able to carry out an inversion oscillation at a temperature which prevails during the production of the deposition material. For example, the particular temperature at which the second molecules are capable of undergoing inversion oscillation may comprise a typical room temperature (e.g., 20° C. or 25° C.). The determined temperature may also be in a temperature range between -60° C. to 600° C., which may prevail, for example, during the production of the deposition material.Furthermore, the inventors have found in a test series an advantageous parameter space of the gas mass flow of the second gas (comprising the inversion molecules) for producing the deposition material. The provision of the second gas can be effected with a gas flow rate of less than 5 sccm (where sccm stands for standard cubic centimeters per minute). Furthermore, the provision of the second gas can be effected with a gas flow rate of preferably less than 2 sccm, particularly preferably less than 0.5 sccm. In a further example, the second gas can be provided with a gas flow rate of less than 0.3 sccm. In these regions, for example, a material can be deposited which has a particular resistance to external influences (e.g. irradiation with UV, DUV, EUV radiation in a vacuum, use in a reactive gas atmosphere, cleaning cycles of an EUV or DUV mask, etc.).The interaction of the gas flow mentioned herein and the interaction of the inversion molecules with a material (within the working range) explained herein could in this case bring about particularly preferred properties of the generated deposition material. A property may be, for example, the composition of the material. For example, Auger electron spectroscopy and / or X-ray photoelectron spectroscopy (abbreviation: XPS) can be used to determine the chemical composition of the material produced.The inventors have thereby recognized that an optimum of the chemical composition of the deposition material can be found in the ranges mentioned. However, advantageous properties can also relate to the resistance of the deposition material. For example, the deposition material may substantially survive a certain number of cleaning cycles (e.g., an EUV or DUV mask) (e.g., a clear defect repaired by the deposition material may substantially not print after this number of cleaning cycles), e.g., at least 10, at least 50, or at least 100, or even at least 1000 cleaning cycles.In principle, however, examples with a provision of the second gas with a different gas flow rate are also conceivable, e.g. <0.01 sccm or >5 sccm. Particularly advantageous deposition material can then be produced, for example, alternatively or additionally by further aspects described herein. Accordingly, a method for depositing chromium nitride or chromium nitride-containing material may be considered an aspect of the invention, in which a particle beam and a first and a second gas, as generally described herein, are used (without being limited to a particular gas mass flow interval). The first gas may be chromium-containing. The second gas may include second molecules capable of performing inversion oscillation.Regardless, it is understood that the term sccm refers to the unit of standard cubic centimeters per minute known to those skilled in the art. It indicates the flow in units of volume per time, the units of volume corresponding to those under standard conditions (temperature T=00° C., pressure p=113.25 hPa). Using standard densities known to the skilled person, it is possible to calculate, for example, the mass flow required for a specific gas flow rate at different pressures or temperatures (for example in kg per minute). For example, the standard density of air is about 1.29 mg / cm 3 or of NH 3 about 0.77 mg / cm 3.The method may further comprise locally providing the first gas and / or the second gas in the working area of the object. The first and / or second gas can thus be directed locally to the working region for producing the deposition material (e.g. via a gas line, a nozzle, etc.). The method may further include locally creating the deposition material within the workspace of the object for lithography such that the creating is substantially limited to the workspace. The method may further comprise using a localized particle beam, e.g. a focused particle beam, wherein the generating comprises a local generating that is substantially limited to a region of the localized particle beam.The object for lithography as described herein may thereby comprise a lithographic mask. The lithographic mask may be designed to be used in lithography for the production of semiconductor-based chips (e.g. during exposure of a semiconductor-based wafer). The lithographic mask may further comprise any type of lithographic mask capable of imaging an image based on a source of electromagnetic radiation (of any wavelength) and a pattern comprised on the lithographic mask. The image can comprise a transformation of the pattern. The lithographic mask may comprise e.g. an EUV mask, a DUV mask, an X-ray lithography mask, a binary mask, a phase shifting mask etc. Furthermore, the lithographic mask may also comprise a stamp of nanoimprint lithography or a mask for lithography, which may image a pattern based on a source of particles.The workspace referred to herein may include a local area of the object for lithography. However, it is also conceivable for the working area to comprise the entire object for lithography. The working region can furthermore have any desired surface dimension, shape and / or geometry. For example, the working range may be of an order of magnitude associated with a (critical) dimension of the object. For example, the (critical) dimension may comprise a certain dimension CD of a pattern element of the object. The working region can, for example, span an area A which results over the specific dimension CD (for example, A can be proportional to the specific dimension CD, for example A=CD 2). Furthermore, the production of the material within the working area can be effected in such a way that the produced material does not necessarily assume the entire surface of the working area, but is produced only in a partial area of the working area. Alternatively, the production of the material within the working area can be effected in such a way that the produced material takes up the entire area of the working area.In one example, the method comprises the provision of the second gas being effected with a gas flow rate of at least 0.01 sccm, preferably at least 0.05 sccm, particularly preferably at least 0.1 sccm. These minimum amounts allow a particularly advantageous stability of the deposited material.Furthermore, the method can comprise the provision of the second gas being effected with a gas flow rate of between 0.1 sccm and 0.5 sccm, more preferably 0.2 sccm and 0.3 sccm, most preferably 0.24 sccm and 0.26 sccm. It has been found that a particularly advantageous stability of the deposited material can be achieved in these regions.In one example, the method comprises the fact that the provision of the particle beam takes place with a residence time of the particle beam of at least 0.1 μs, preferably at least 0.3 μs, most preferably at least 0.5 μs. In a further example, the method comprises the provision of the particle beam taking place with a residence time of the particle beam of at least 1 μs, preferably at least 3 μs, most preferably at least 5 μs. In a further example, the method comprises the provision of the particle beam being effected with a residence time of the particle beam of 0.1 μs to 10 μs, preferably 0.3 μs to 7 μs, most preferably between 0.4 μs to 6 μs. In order to deposit the material at a desired height, several cycles are run through with this dwell time.In one example, the method comprises the fact that the provision of the first gas and / or of the second gas is effected in such a way that the deposition material is formed at least partially in a gas phase without the influence of the particle beam. By using inversion molecules in the second gas according to the invention, a higher concentration of the second gas in the environment of the working area of the object can be ensured compared to using non-inversion molecules (as described herein). This state can therefore make it possible for a reaction to occur between the first and the second gas even without the influence of the particle beam. The probability that the deposition material already forms in the gas phase over a surface of the working material can thus be substantially increased. On the basis of this, for example, an advantageous boundary condition for the reactions during the particle beam-induced generation of the deposition material may be present. When activating the particle beam, the generation of the deposition material in the form of a deposition of the deposition material within the working region can thus take place in a favored manner and be made more efficient. The described state can furthermore be promoted by a targeted adaptation of a gas parameter of the first gas and / or of the second gas (for example via corresponding gas mass flows, gas concentrations, gas pressures, etc. of the first and / or second gas).In one example, the method includes providing the second gas such that a reaction product of generating the material is displaced from the working region. This can be made possible, for example, by using the inversion molecules as second molecules. As described herein, a high concentration of the second gas can be ensured in the vicinity of the working area of the object compared to the use of non-inversion molecules. The resulting high supply of second molecules in the gas phase can increase the probability of displacement of the reaction products from the surface of the working region.In one example, the first gas may be understood as a substantial deposition gas for producing the deposition material. The first gas can be designed in such a way that it substantially influences a metal fraction in the generated deposition material. In one example, the method includes where the first gas includes first molecules that include a metal atom. In this example, therefore, the first gas (as a substantial deposition gas) may affect the process of creating the deposition material such that it defines whether the deposition material comprises a particular metal. Furthermore, the first gas (as substantial deposition gas) can define whether the deposition material comprises a specific composite metal.The second gas described herein can be understood in this context as an additive gas with respect to the substantial deposition gas (i.e. the first gas). The second gas can additionally adapt the chemical composition as an additive gas and the physical properties of the deposition material (e.g. its stoichiometry, hardness, chemical resistance, etc.). For example, using the second gas as additive gas may cause constituents of the second gas to be incorporated into the deposition material. Further, using the second gas may cause a percentage of matter within the deposition material to be reduced (compared to using the first gas exclusively for generating the deposition material with a particle beam). The inventors have recognized that an additive gas comprising inversion molecules is particularly advantageous compared to an additive gas comprising non-inversion molecules on the basis of the relationships described herein.In one example, the method includes providing the first gas and the second gas at least partially simultaneously. For example, the first gas and the second gas can be introduced simultaneously into the environment of the working region or into the environment of the object, e.g. during the production of the deposition material. This can further comprise that during the generation (at least partially) a first gas flow rate of the first gas as well as a second gas flow rate of the second gas are present, so that the presence of both gases in the environment of the working area / object is ensured. It is possible here, for example, for the first and second gas mass flows to be substantially identical. In other examples, however, they can also be different from one another. The simultaneous provision of the first and second gases can further comprise varying the first gas flow rate and the second gas flow rate (during the production of the deposition material).In one example, the method includes providing the first gas and the second gas at least partially staggered in time. For example, for the production of the deposition material, it may be necessary that only one of the two gases is to be provided or introduced in the environment of the working region / object in a process step of the production. For example, at the beginning of the production of the deposition material, it may be necessary for only the first gas (or the second gas) to be introduced into the environment of the working area / object first. Subsequently, the second gas (or the first gas) can be added or provided at a later point in time. Furthermore, it is also conceivable that during the production, a change is made stepwise between the (exclusive) provision / introduction of the first gas (without the second gas) and the (exclusive) provision / introduction of the second gas (without the first gas). Furthermore, it is also possible that a process end of the production of the deposition material comprises the exclusive provision / introduction of one of the two gases. For example, it is conceivable that a process end of the generation is defined by the exclusive provision / introduction of the second gas.In another example, the method includes where the first gas includes first molecules comprising a carbonyl compound. This can also be understood such that the first molecules of the first gas have a carbonyl group. For example, the first molecules may comprise a carbon monoxide ligand.In one example, the method includes where the first molecules comprise a metal carbonyl. For example, the metal carbonyl may comprise a complex compound of a metal with carbon monoxide as a ligand. The metal carbonyl can basically comprise any charge of a complex, any number and type of central atoms, as well as any number and type of ligands and their binding modes. For example, the metal carbonyl may have a neutral complex, positively charged metal carbonyl cations and / or negatively charged metal carbonylate anions. During the production of the deposition material, carbon monoxide molecules (i.e. CO molecules) can be formed as reaction products. In another example, the method includes where the first molecules comprise an organometallic compound.In one example, the metal carbonyl comprises a chromium carbonyl. For example, the chromium carbonyl may comprise a chromium hexacarbonyl, Cr(CO) 6.In an example, the method includes where the generated deposition material includes a chromium nitride. It has been found that this allows a particular durability of the separating material to be achieved. In another example, the generated deposition material comprises a metal nitride and / or a metal oxynitride.In one example, the method comprises the chromium nitride (or the deposition material) comprising at least 10 atomic percent nitrogen, preferably at least 15 atomic percent nitrogen, particularly preferably at least 20 atomic percent nitrogen. The unit atomic percent can relate to a substance amount fraction of the chromium nitride (or of the deposition material), wherein atomic percent specifies, for example, the relative number of particles (for example of the nitrogen atoms) with respect to the total number of particles of the substance (for example total number of atoms in the chromium nitride, or total number of atoms in the deposition material). The atomic percentage can be detected, for example, by Auger electron spectroscopy and / or X-ray photoelectron spectroscopy (as well as, for example, by photoelectron spectroscopy, PES).In one example, the method includes producing the deposition material such that a defect of the object is corrected. For example, this may initially comprise locating the defect (e.g. via a scanning electron microscope, an optical microscope, etc.). In this case, the working region used for producing the deposition material may be defined based on at least one characteristic of the localized defect (e.g. based on a position, shape, size, type of the defect, etc.). The remedying the defect of the object may further include generating a repair shape including the defect. The repair form may serve as the workspace for the methods recited herein, in one example. The repair form can have a pixel grid, for example, as a result of which a location of the defect can be made possible. The pixel grid can be designed, for example, such that it follows the contour of the defect, so that each pixel of the pixel grid corresponds substantially to a location of the defect and thus represents a defect pixel. In another example, the pixel grid has a fixed geometric shape (e.g., a polygon, a rectangle, a circle, etc.) that completely encompasses the defect, wherein not each pixel forcibly represents a location of the defect. Here, the pixel grid may include defect pixels corresponding to a location of the defect and non-defect pixels corresponding to a location that does not cover a part of the defect. In one example, the method comprises directing the particle beam at least onto a defect pixel of the pixel grid of the repair shape during the generation of the material. Furthermore, the particle beam can be configured such that it can be directed onto each defect pixel during the generation of the deposition material. This can ensure that the generation of the deposition material is locally limited to the defect pixels and thus only the defect is processed.In one example, the method includes where the defect includes a clear defect. A clear defect is a defect on the object for lithography, which should actually be opaque after the object has been designed (e.g. opaque or strongly absorbing to radiation of a specific wavelength). In particular, it may be defined opaque with respect to a lithography method for which the object may be used. For example, the object for lithography may comprise an EUV mask for an EUV lithography method, wherein opaque in this case may refer to a wavelength of the radiation of 13.5 nanometers. It is furthermore conceivable that opaque refers to a DUV lithography method (at 193 nanometers or 248 nanometers wavelength of the radiation, for example), an i-line lithography method (at 265 nanometers wavelength of the radiation, for example), as well as any other lithography method depending on the object. Furthermore, a clear defect may comprise, for example, a defect location at which material of an opaque pattern element (i.e. pattern element) of a lithographic mask is missing. The method can thereby comprise the deposition material being generated in such a way that the faulty location becomes opaque. For example, this may comprise an absorber material being produced as deposition material by the method mentioned herein. The absorber material can be designed such that it is opaque with respect to the wavelength for which the pattern element is also opaque. The absorber material produced can correspond, for example, to a material of a layer of the pattern element or can comprise a material composition which has optically similar properties (e.g. refractive index n, absorption coefficient k) to a material of a layer of the pattern element. In one example, an absorber material is deposited according to the method mentioned herein, which includes a substantial portion of chromium nitride or substantially chromium nitride to remedy the clear defect. Furthermore, the method according to the invention can comprise producing a material of any layer of the pattern element according to the method mentioned herein.A second aspect of the invention relates to a method for processing a surface material of an object for lithography, comprising: providing a second gas, wherein the second gas has second molecules capable of performing an inversion oscillation. Furthermore, the method of the second aspect comprises providing a particle beam on a working region of the object for passivating the surface material within the working region based at least in part on the second gas. The method of the second aspect can accordingly comprise particle beam-assisted or particle beam-induced passivation based at least in part on the second gas. The surface material can comprise any material which the object has for lithography. For example, the surface material may be a material of any structure and / or layer of a lithographic mask. For example, the surface material can also be located on the object.Features which are described for the first aspect in this application can also be included in the second aspect. In particular, the second gas may be one described herein with respect to the first aspect. Features described herein for the second aspect can likewise also be included in the first aspect. Further, the first aspect may include the second aspect, and also the second aspect may include the first aspect.The passivation of the surface material can be designed such that only a local location of the surface material on which the particle beam acts is passivated according to the method of the second aspect. For example, the particle beam can be directed onto a local location of the surface material (e.g. via a targeted deflection and / or focusing of the particle beam), so that the local location is passivated in combination with the provided second gas. The extent of the local location that is passivated may correspond to the extent of the particle beam on the surface, for example, the passivation may take place within a location whose diameter is proportional to the diameter of the particle beam (e.g. FWHM) on the surface (e.g. 5 times the diameter to 0.2 times the diameter or 2 to 0.5 times the diameter of the particle beam). The passivation of the surface material can accordingly be designed locally in any desired degree of freedom by positioning the particle beam. The surface material can thus be passivated in a targeted local manner (i.e. geometrically limited). For example, in the context of the method of the second aspect, the particle beam can be scanned in a specific pattern along (the surface) of the surface material, as a result of which the surface material is passivated along this pattern. This is in contrast to a conventional global purely gas-based passivation, in which a material (e.g. a material of the object for lithography) can be passivated only over a large area (e.g. in the case of a conventional purely gas-based passivation, the entire surface which is exposed to a gas is passivated). The method according to the invention thus enables a high degree of configuration of the geometry of the passivation or of the passivated sites, as well as the selective exclusion of sites not to be passivated (since e.g. only the sites approached by the particle beam can be passivated via the method).In one example, passivating the second aspect includes passivating a lateral surface of the surface material. The lateral surface may comprise e.g. a local location / area of an edge, a corner, a ridge, a depression, etc. of the surface material. The method according to the invention can therefore enable passivation of lateral locations of a material of the object that are usually difficult to access for lithography. In this case, the particle beam can be aligned at a lateral angle onto the surface material. It is also conceivable that during the passivation of the lateral surface, the object (and thus the surface material) is angled / tilted, as well as a combination of tilting the object and lateral alignment of the particle beam. In another example, the invention includes where the surface material includes a material of a lateral surface of the object.The passivation of the surface material can be designed in such a way that the surface material is physically and / or chemically more resistant to external influences than without the passivation according to the invention. The passivation can be optimized in particular with respect to the external influences to which the object is exposed during the course of the lithographic processing (e.g. electromagnetic radiation, flushing gases, cleaning chemicals, immersion media, etc.). The passivation can take place in particular in an advantageous manner since inversion molecules are used as second molecules, which promote a shaping of a defined (local) gas concentration of the second gas within the working region (as described herein). Furthermore, the passivation can serve in particular for passivating reactive sites of structured lithographic masks which can be attacked (preferably) by process gases (e.g. edges, pre-damaged structures, critical structures which are easily damaged, etc.). The passivation can be carried out prophylactically in order to prevent possible damage in a predictive manner.In an example, the method of the second aspect includes where the passivating supports an etching process. For example, during an etching process or within the scope of an etching process (e.g. during a local etching in the region of the surface material), the passivation of the surface material (as described herein) may take place. The etching process can comprise, for example, the etching of chromium- and / or chromium oxide-containing absorber material. As etching gas, for example, XeF 2 and H 2 O can be used. The edges formed during the etching process can be understood as the surface material described herein (or the lateral surface of the surface material). Accordingly, the invention includes that the edges described herein can be passivated via the method of the second aspect. This can be effected, for example, for a basic (e.g. final) passivation of the surface material after completion of the etching process. Furthermore, it is also conceivable for the passivation to take place in such a way as to adapt the process speed of the etching process. The passivation may be carried out at least partially during the etching process.In an example, the method of the second aspect further comprises generating the surface material within the working region based at least in part on providing a first gas and the particle beam before passivating the surface material. The first gas of the second aspect can correspond to one of the examples mentioned herein of the first gas of the first aspect of the invention. The method of the second aspect can furthermore comprise a targeted (e.g. particle beam-induced) deposition of the surface material, which can subsequently be passivated according to the invention. For example, the passivation can take place directly after the production of the surface material, wherein it is also conceivable that the production of the surface material and the passivation can take place separately (e.g. as processing which are separate from one another).In another example, the surface material may be produced according to any of the methods of the first aspect described herein. In this case, the surface material of the second aspect may be similar to or correspond to the generated deposition material of the first aspect.In another example, the surface material may be further generated based at least in part on an additive gas. The additional gas can be provided as an additive gas next to the first gas during the production of the surface material. For example, the additive gas may comprise an oxidizing agent, a halide and / or a gas having a reducing effect. The oxidizing agent can comprise an oxygen-containing gas. For example, the oxidizing agent may include at least one of oxygen (O 2), ozone (O 3), water (H 2 O), hydrogen peroxide (H 2 O 2), dinitrogen monoxide (N 2 O), nitrogen monoxide (NO), nitrogen dioxide (NO 2), nitric acid (HNO 3). The halide may comprise a halogen-containing gas. For example, the halide may comprise at least one of Cl 2, HCl, XeF 2, HF, I 2, HI, Br 2, HBr, NOCl, PCl 3, PCl 5, PF 3. The gas with a reducing effect (e.g. a reducing agent) can comprise a hydrogen-containing gas. For example, the reducing effect gas may include at least one of H 2, NH 3, H 2 N-NH 2, CH 4. In one example, creating the surface material includes providing a first gas including chromium hexacarbonyl and providing an auxiliary gas including nitrogen dioxide as the oxidant. In another example, creating the surface material includes providing a first gas including chromium hexacarbonyl and providing an additive gas including water and / or oxygen as the oxidant.In one example, the method of the second aspect comprises the surface material comprising an absorber material. As described herein, the absorber material may be designed to be opaque to the wavelength of the lithography process in which the object may be used for lithography.In an example, the method of the second aspect includes where passivating includes creating a passivation layer on the surface material. For example, the generation of the passivation layer may comprise that at least one upper layer(s) of the surface material is chemically / physically changed. Furthermore, the generation of the passivation layer may comprise depositing the passivation layer as a further layer on the surface material. Furthermore, it is also conceivable that a combination of modified upper layer(s) of the surface material and a deposited further layer on the surface material is produced according to the invention. In one example, the method of the second aspect comprises the generated passivation layer comprising a nitride of the surface material.In one example, the method of the second aspect comprises the generated surface material comprising chromium. For example, a chromium oxide-containing or chromium-containing material can be produced as surface material, the surface of which is passivated by the nitride formation.In one example, the method of the second aspect includes where the generated passivation layer includes a chromium nitride.In one example, the method of the second aspect includes, after the passivating, creating a further surface material on the passivated surface material. The further surface material can be produced analogously to the surface material (as described herein). Further, the method of the second aspect may comprise passivating (as described herein) the further surface material. In a further example, the method of the second aspect comprises an alternating (i.e. alternating) generation of the further surface material and its passivation. The alternating generation and passivation can be repeated as often as desired. For example, this example can result in a layer stack in which a (further) surface material and its passivation layer alternate.In one example, the method of the second aspect comprises the chromium nitride comprising at least 10 atomic percent nitrogen, preferably at least 15 atomic percent nitrogen, particularly preferably at least 20 atomic percent nitrogen.In one example, the method of the second aspect comprises the generation of the surface material being carried out in such a way that a defect of the object is corrected. For example, this can be carried out analogously to the examples described in the first aspect. In one example, the method of the second aspect includes where the defect includes a clear defect.In an example, the method of the first and / or second aspect includes wherein the inversion oscillation comprises pyramidal inversion of the second molecules.In one example, the method of the first and / or second aspect includes where the second molecules include a trigonal pyramidal geometry.In an example, the method of the first and / or second aspect comprises the second molecules comprising nitrogen and hydrogen in a chemical compound. For example, a second molecule may substantially comprise nitrogen and hydrogen. It is furthermore conceivable for the second molecule to comprise exclusively nitrogen and hydrogen.In an example, the method of the first and / or second aspect comprises the second molecules comprising ammonia, NH 3. For example, the inversion oscillation of ammonia occurs at a typical room temperature at a high frequency of about 23 gigahertz (GHz). The inventors have recognized that this is advantageous for the method according to the invention.In an example, the method of the first and / or second aspect comprises the second molecules comprising H 2 N-NH 2.In an example, the method of the first and / or second aspect comprises the second molecules comprising nitrogen and a halogen in a chemical compound. For example, a second molecule may substantially comprise nitrogen and a halogen. It is further conceivable that the second molecule comprises exclusively nitrogen and halogen.In an example, the method of the first and / or second aspect comprises the second molecules comprising at least one of the following molecules: NF 3, NCl 3, NI 3, NBr 3.In an example, the method of the first and / or second aspect includes where the second molecules include nitrogen, hydrogen, and a halogen in a chemical compound. For example, a second molecule may substantially comprise nitrogen, hydrogen and a halogen. It is further conceivable that the second molecule comprises exclusively nitrogen, hydrogen and a halogen.In one example, the method of the first and / or second aspect comprises the second molecules comprising at least one of the following molecules: NH 2 X, wherein X comprises a halogen; NHX 2, wherein X comprises a halogen.In one example, the method of the first and / or second aspect comprises the fact that the second molecules have a lower absorption probability in the working region than NO 2 molecules. The lower absorption probability can ensure better availability of the second molecules.In one example, the method of the first and / or second aspect comprises the particle beam comprising an electron beam. For example, the generation of the deposition material of the first aspect and / or the generation of the surface material of the second aspect may be effected via electron beam induced deposition (further known as (F)EBID-(focused) electron beam induced deposition, for example).However, it is also conceivable for the particle beam to comprise an ion beam (e.g. gallium ions, etc.). For example, the generation of the deposition material of the first aspect and / or the generation of the surface material of the second aspect can be effected via ion beam induced deposition (further known as (F)IBID-(focused) ion beam induced deposition, for example).Furthermore, a use of a plurality of particle beams is also conceivable as the particle beam.In one example, the method of the first and / or second aspect comprises further providing an additive gas (as additive gas). For example, the second gas can comprise the additional gas (or its molecules). The additional gas can comprise an oxidizing agent, a halide and / or a gas with a reducing effect (i.e. reducing agent). The oxidizing agent may comprise, for example, an oxygen-containing gas. For example, the oxidizing agent may include at least one of oxygen (O 2), ozone (O 3), water (H 2 O), hydrogen peroxide (H 2 O 2), dinitrogen monoxide (N 2 O), nitrogen monoxide (NO), nitrogen dioxide (NO 2), nitric acid (HNO 3). The halide may comprise a halogen-containing gas. For example, the halide may comprise at least one of Cl 2, HCl, XeF 2, HF, I 2, HI, Br 2, HBr, NOCl, PCl 3, PCl 5, PF 3. The gas with a reducing effect can comprise a hydrogen-containing gas. For example, the reducing effect gas may include at least one of H 2, NH 3, H 2 N-NH 2, CH 4.In a preferred example, the method of the first and / or second aspect comprises providing a first gas which comprises chromium hexacarbonyl, and providing a second gas which comprises inversion molecules (as described herein) as second molecules and comprises nitrogen dioxide as oxidizing agent. In a further preferred example, the method of the first and / or second aspect comprises the provision of a first gas which has chromium hexacarbonyl, and the provision of a second gas which has inversion molecules (as described herein) as second molecules and has oxygen and / or water as oxidizing agent. In a further preferred example, the method of the first and / or second aspect comprises providing a first gas which comprises chromium hexacarbonyl, and providing a second gas which has inversion molecules (as described herein) as second molecules and has H 2 as reducing agent.A third aspect of the invention relates to an apparatus for processing an object for lithography, comprising: means for providing a first gas; means for providing a second gas, wherein the second gas has second molecules which are capable of performing an inversion oscillation; means for providing a particle beam. The apparatus is further configured to perform a method according to any of the examples of the first and / or second aspect of the invention mentioned herein. Furthermore, the device can comprise a computer system.In some examples, the device does not necessarily comprise means for providing the first gas, e.g. if it is provided only for a passivation described herein.A fourth aspect of the invention relates to an object for lithography, wherein the object has been processed according to a method of the first and / or second aspect.A fifth aspect of the invention relates to a method for lithographic processing of a semiconductor-based wafer. The method of the fifth aspect further comprises a lithographic transfer of a pattern associated with an object for the lithography onto the wafer, wherein the object has been processed according to any of the examples of the first and / or second aspect of the invention mentioned herein. The lithographic transfer may thereby comprise a lithography method for which the object is designed (e.g. EUV lithography, DUV lithography, i-line lithography, etc.). For example, the method of the fifth aspect may comprise providing a beam source of electromagnetic radiation (e.g. EUV radiation, DUV radiation, i-line radiation, etc.). Furthermore, provision of a developable lacquer layer on the wafer may be included. The lithographic transfer can furthermore be based at least in part on the beam source and the provision of the developable lacquer layer. In this case, the pattern can be imaged onto the lacquer layer (in a transformed form), for example by means of the radiation of the radiation source.The methods described herein can be deposited, for example, in writing. This can be realized, for example, via a digital file, analog (e.g., in paper form), in a user manual, in a recipe (which is stored, for example, in a device and / or a computer of a semiconductor work). It is furthermore conceivable that a written protocol is created when one of the methods described here is carried out. The protocol can thereby e.g. enable that the execution of the method as well as its details (e.g. the recipe) can be detected at a later time (e.g. in the context of an error assessment, an audit, etc.). The log can comprise, for example, a log file (i.e. log file), which can be stored, for example, in a device and / or in a computer.A sixth aspect of the invention relates to a computer program comprising instructions which, when executed by a computer system, cause the computer system to carry out a method according to one of the examples of the first, second and / or fourth aspect of the invention.A further aspect relates to the mentioned apparatus having a memory which comprises the computer program. The apparatus may further comprise means for executing the computer program. Alternatively, it is also possible for the computer program to be stored elsewhere (e.g. in a cloud) and for the apparatus to have only means for receiving instructions resulting from the execution of the program elsewhere. This or the like can make it possible, for example, for the method to be able to run automatically or autonomously within the device. Thus, the intervention, e.g. via an operator, can be minimized, so that the costs as well as the complexity in the processing of masks can be minimized.The features mentioned herein (as well as examples) of the methods can also be applied or apply in a corresponding manner to the mentioned device. Likewise, the features mentioned herein (as well as examples) of the device can also be applied or apply in a corresponding manner to the methods described herein.4. Brief Description of the FiguresIn the following detailed description, background technical information and embodiments of the invention are described with reference to the figures, in which: FIG. 1 schematically illustrates, in a plan view, an exemplary repair situation of an object for lithography from the prior art. FIG. 2 schematically illustrates, in a cross section, processes during a repair of a defect of an object for lithography by way of example. Figure 3 shows a schematic diagram of an exemplary method of the invention. FIGS. 4 a- b 4 a show a scanning electron microscope photograph of five test structures, wherein a part of the test structures was produced by the method according to the invention; FIG. 4 bshows results of an Auger electron spectroscopy of the five test structures from FIG. 4 a in a diagram. FIG. 5 shows schematically in section an exemplary device according to the invention.5. DETAILED DESCRIPTION OF POSSIBLE EMBODIMENTSFIG. 1 schematically illustrates, in a plan view, an exemplary repair situation of an object for lithography. The object for lithography may thereby comprise a lithographic mask suitable for any lithography method (e.g. EUV lithography, DUV lithography, i-line lithography, nanoimprint lithography, etc.). In an example, the lithographic mask may comprise an EUV mask, a DUV mask, an i-line lithography mask and / or a nanoimprint stamp. Further, the object for lithography may include a binary mask (e.g., a chrome mask, an OMOG mask), a phase mask (e.g., a chrome-free phase mask, an alternating phase mask (e.g., a rim phase mask)), a halftone phase mask, a triton phase mask, and / or a reticle (e.g., with pellicle). The lithographic mask can be used, for example, in a lithography method for the production of semiconductor chips.The object for lithography can thereby comprise (undesired) defects. For example, a defect may be caused in the manufacture of the object. Furthermore, a defect can also be caused by (lithographic) processing of the object, a process deviation in (lithographic) processing, transport of the object, etc. Due to the usually costly and complex production of an object for lithography, the defects are therefore usually repaired.In the exemplary embodiments described here, for illustrative purposes, frequently recourse is made here to an EUV mask as an example of an object for lithography. However, instead of the EUV mask, any object is conceivable for lithography (e.g. as described herein).FIG. 1 can schematically illustrate, in a plan view, two local states D, R of a section 1000 of an EUV mask as part of a repair of a defect of the mask. The section 1000 shows a part of a pattern element PE of the EUV mask. The pattern element PE can also be understood as a pattern element of the EUV mask. The pattern element PE can be a part of a designed pattern which can be transferred to a wafer, for example, by a lithographic method. The local state D thereby shows a clear defect 1010 of the pattern element PE. The clear defect 1010 (as described herein) may be distinguished, for example, by a lack of opaque material of the pattern element PE. With reference to FIG. 1 (state D), a defect-free pattern element PE in the cutout 1000 would have to have a rectangular shape, it being evident that this setpoint state is not present due to the defect 1010. Therefore, repair material 1020 is usually produced in the region of clear defect 1010 via a repair process RV, so that a repaired state R of pattern element PE can be produced. For example, in FIG. 1, it can be seen in state R that the target state of the rectangular shape of the pattern element is restored. The repair material 1020may comprise a material which causes the location of the (original) defect 1010to have an opaque effect which corresponds to the opaque effect of the pattern element. The opaque effect of the pattern element is in this case brought about in particular by at least one absorber material of the pattern element. The repair material 1020 therefore usually likewise comprises an absorber material which can be substantially identical to the absorber material of the pattern element, for example, or can have a similar absorbing property (for example, a similar material) to the absorber material of the pattern element. A technical challenge in this case is that the locally generated repair material can be exposed to the same influences as the material of the pattern element intrinsic to the EUV mask. The locally limited repair material can therefore be severely strained chemically and physically.During use in lithography apparatus or lithography methods, a lithographic mask may be exposed to extreme physical and chemical environmental conditions, which may, for example, alter material properties of a mask. This applies in particular to the exposure of EUV masks during an EUV lithography method, wherein in particular the absorber material can be highly exposed to these influences. The EUV exposure with high-energy EUV radiation usually takes place in a hydrogen atmosphere. Furthermore, in particular, DUV masks can also be exposed to potentially material-modifying environmental conditions in a DUV lithography method.The repair material, which may comprise absorber material, for example, may therefore be subject to high demands with regard to stability with respect to these lithographic ambient conditions. Electron beam-induced deposition is usually used in the repair of defects of missing material (e.g. in UV, DUV, EUV masks, etc.). This makes it possible to produce an absorbent (e.g. chromium-containing) deposit. Frequently, a chromium precursor gas is used in conjunction with an oxidizing additive gas (e.g. NO 2, O 2, H 2 O, etc.). The primary goal of adding the additive oxidizing gases is to reduce the carbon content in the deposit, since remaining carbon can additionally reduce the stability of the deposit. The chromium oxide-containing material (i.e. repair material) formed in this case can often only partially meet the demands on stability with respect to the aggressive ambient conditions prevailing in lithography processes (e.g. in UV, DUV, EUV lithography methods). Damage to the repair material (as well as to the mask) is therefore not always excluded.The damage to the repair material (as well as the mask) may include chemical and / or physical changes in the material, which may have various causes. On the one hand, the causes of the operations may be within the lithography process (e.g., exposure operations). For example, this can be caused by the radiation during an exposure (e.g. EUV radiation, DUV radiation, etc.), a (process) temperature, a reaction with hydrogen and / or other reactive hydrogen species (e.g. radicals, ions, plasma) and / or a reaction of the mask with purge gases (e.g. N 2, extreme clean dry air (XCDA ®), noble gases) in conjunction with radiation during the exposure. On the other hand, the causes can lie in downstream processes (e.g. during processing of the masks following a lithography method). This may include, for example, mask cleaning. In this case, the repair material (as well as the mask) damaged by chemical and / or physical processes during the lithography method can additionally be damaged by the downstream processes.FIG. 2 schematically illustrates, in a cross section, processes during a repair of a defect of an object for lithography by way of example. Furthermore, FIG. 2 schematically presents a section through a reflective lithographic mask 200 for the EUV wavelength range (i.e. an EUV mask or EUV photomask). The example EUV mask 200 may be configured for an exposure wavelength in the range of 13.5 nm. The EUV mask 200 may include a substrate 210 of a material having a low thermal expansion coefficient, such as quartz. Other dielectrics, glass materials or semiconducting materials may also be used as substrates for EUV masks, such as ZERODUR ®, ULE ® or CLEARGRAM ®, The back side 215 or the back side surface 215 of the substrate 210 of the EUV mask 200 may serve to retain the substrate 210 during the manufacture of the EUV mask 200 and during its operation in an EUV photolithography apparatus. On the back side 215 of the substrate 210 a thin electrically conductive layer 220 for holding the substrate 210 on an electrostatic chuck (ESC)) is preferably applied.The front side 225 of the substrate 210 may include a deposited multilayer film or structure 270 having, for example, 20 to 80 pairs of alternating molybdenum (Mo) 230 and silicon (Si) layers 235, also referred to as MoSi layers. Instead of molybdenum, layers of other elements having a high nucleonic number, such as cobalt (Co), nickel (Ni), tungsten (W), rhenium (Re), zirconium (Zn) or iridium (Ir), can also be used for the MoSi layers. In order to protect the multilayer structure 270, a capping layer 240 made of, for example, silicon dioxide may be applied to the uppermost silicon layer 235. Other materials such as ruthenium (Ru) are also conceivable as the capping layer 240.Patterned pattern elements PE may be located on the cover layer 240. A pattern element PE can comprise a plurality of layers. For example, a pattern element PE may include a buffer layer 245 located on the capping layer 240. Further, a pattern element PE may include an absorption layer 250 located on the buffer layer 245. Furthermore, a pattern element PE can comprise an antireflection layer 255, which is located on the absorption layer 250. A pattern element PE can be designed in such a way that it is opaque (i.e. opaque or strongly light absorbing) with respect to light radiation which is used, for example, in EUV lithography (e.g. light radiation with a wavelength of 13.5 nm). In this case, all layers of the pattern element PE can be designed to be opaque with respect to this light radiation. In particular, the absorption layer 250 can have the main portion of the absorption of the (EUV) light radiation, wherein the buffer layer 245 and / or the antireflection layer 255 can also contribute to the absorption. Due to the attached pattern elements PE, the EUV mask 200 accordingly has absorbing regions 280 and reflecting regions 285.Possible materials of the buffer layer 245 may include quartz (SiO 2), silicon oxygen nitride (SiON), Ru, chromium (Cr), chromium oxide and / or chromium nitride (CrN). Chromium nitride may be preferred as the material of buffer layer 245 in an EUV mask. Possible materials of the absorption layer 250 may include chromium nitride, chromium, chromium oxide, titanium nitride (TiN) and / or tantalum nitride (TaN). Chromium nitride may be preferred as the material of the absorption layer 250 in an EUV mask. The antireflection layer may comprise, for example, tantalum oxynitride (TaON) and / or chromium nitride.During the repair, it may be necessary to replace missing material of the pattern element PE. In this case, it may be necessary to produce any desired material of a layer of the pattern element PE. For example, a repair process RV may include creating the material of the absorption layer 250, which is schematically illustrated with A in FIG. 2. For example, repair of an only partially missing absorption layer 250 may be necessary. In this case, the repair material can be produced directly on the (partially existing) absorption layer 250. In this case, the boundary layer of the repair material produced is with respect to the absorption layer 250 (and not, e.g., with respect to the buffer layer 245 or a substrate). Further, a repair operation RV may include creating the material of the buffer layer 245, schematically illustrated with B in FIG. 2. It is also conceivable that during a repair process RV material of the antireflection layer 255 and / or material of the cover layer 240 is produced. Furthermore, a combination of the production of different materials of different layers of the pattern element PE is also conceivable (e.g. during a repair process RV the material of the buffer layer 245 and of the absorption layer 250 can be produced). Furthermore, it is also possible that only an absorber material, which corresponds e.g. to the material of the absorption layer 250 or has similar opaque properties to this, is produced during a repair process RV. In this case, correcting the missing portions of the buffer material 245 and / or the antireflection layer 255 may not necessarily be necessary for correcting the (clear) defect.FIG. 3 shows a schematic diagram of an example method 300. The method 300 can be used to generate missing material of a pattern element PE. As described herein, this may be used, for example, for remedying a clear defect.The method can thereby comprise providing 310 a first gas. The first gas can have, for example, a chromium-containing gas, preferably chromium hexacarbonyl.Furthermore, the method 300 may comprise providing 320 a second gas, wherein the second gas may comprise second molecules capable of performing an inversion oscillation. The second gas can comprise ammonia, for example, since ammonia is capable of carrying out an inversion oscillation. In particular, the provision of the second gas can be effected with a gas flow rate of less than 5 sccm, preferably less than 2 sccm, particularly preferably less than 0.5 sccm.Furthermore, the method 300 may comprise providing 330 a particle beam on a working region for generating a deposition material based at least in part on the first gas and the second gas. In particular, the generating may comprise an electron beam induced deposition which takes place in a gas atmosphere comprising e.g. chromium hexacarbonyl (as first gas) and ammonia (as second gas). The method can furthermore comprise the generation taking place in a specific parameter space. For example, the parameter space can comprise the provision of the second gas being effected with a gas mass flow as described herein. Further parameter spaces are also conceivable for the method, which can relate, for example, to the first gas, the second gas and / or the particle beam or the parameters thereof. Some parameter spaces of the exemplary method 300 could thereby enable particularly advantageous properties of the produced deposition material. In particular when using a nitrogen-containing second gas, the specified parameter spaces can be advantageous for achieving a high nitride content of the deposited material (compared to deposition using only the first gas). The carbon content in the deposited material can be reduced (in comparison to a deposition with only the first gas).FIG. 4 ashows a top view of a scanning electron microscope photograph of five test structures, wherein a part of the test structures was produced by the method according to the invention. The five test structures S 1, S 2, S 3, S 4, S 5 are rectangular parallelepiped structures, wherein the test structures S 2, S 3, S 4, S 5 have been produced with different parameter spaces of the method according to the invention. Common to all test structures S 1-S 5 is that chromium hexacarbonyl was provided as the first gas and the generation of the deposition material was based on electron beam induced deposition. Here, the test structures S 2-S 5 have in common that the method according to the invention was carried out with provision of ammonia as the second gas. The test structure S 1 was produced as a reference structure, wherein the production of the test structure S 1 took place without the provision according to the invention of the second gas (e.g. ammonia) (i.e. only the first gas was present). The process parameters are explained in more detail below.The test structure S1 was produced merely by providing chromium hexacarbonyl and electron beam induced deposition. A relatively short dwell time of the electron beam of 0.5 μs was selected. The test pattern S 2 was generated with a gas flow rate of the second gas (ammonia in this example) of 0.1 sccm and the same dwell time of the electron beam. The test structure S 3 was produced with a gas flow rate of the second gas of 0.25 sccm and again with the same dwell time of the electron beam. The test pattern S 4 was produced with a gas flow rate of the second gas of 0.25 sccm and a relatively long dwell time of the electron beam (10 times longer than at S 1). The test structure S 5 was produced with a gas flow rate of the second gas of 0.4 sccm and a dwell time of the electron beam as in S 1.For the test structures S 2 to S 5, the scanning of the electron beam during particle beam-induced deposition was selected such that the height dimensions of the test structures S 2 to S 5 are of the same order of magnitude (at approximately 50 nm). The height dimension of the test structure S 1 was on the order of magnitude of approximately 130 nm, which could be attributed to the non-provision of the second gas during the production of the reference structure S 1. Furthermore, during the processing of the test structures S 1, S 2, S 3, S 4, S 5, a scanning of a pixel grid was carried out, which geometrically defines the test structure. The electron beam was directed to all pixels of the pixel grid of each test structure at least once. The scanning can be understood as the generation of a sub-layer, wherein the height of the test structure is defined by a repeated scanning. A departure can be referred to as a "loop" or cycle. The test structures S1, S2, S3 and S5 were produced with respectively similar numbers of loops. The number of loops for the test structure S4 was significantly lower because of the higher dwell time.FIG. 4 bshows results of Auger electron spectroscopy of the five test structures from FIG. 4 a. The results of Auger electron spectroscopy (or Auger spectroscopy) can therefore allow a relative comparison of the test results. The ordinate of FIG. 4 bindicates a proportion of substance in atomic percent. The abscissa of FIG. 4 bindicates the substance evaluated in Auger spectroscopy, wherein the results of all test structures S 1, S 2, S 3, S 4, S 5 are shown grouped for each substance. The analyzed substances shown in FIG. 4 bare carbon C and nitrogen N. Oxygen and chromium were likewise analyzed, but are not shown in FIG. 4 b. As can be seen in FIG. 4 b, when using the method according to the invention (i.e. for the test structures S 2 to S 5), a significantly increased nitrogen content can be seen in comparison with the reference structure S 1. The method according to the invention can thereby enable a nitrogen content of at least 10 atomic percent, wherein no significant nitrogen content in the deposition material could be detected with the conventional method in reference structure S 1. This includes preferentially producing chromium nitride by the method of the present invention using ammonia as compared with the conventional method. For structures S4 and S5, it was even possible to achieve a nitrogen content of >20 atomic percent. For the exemplary process according to the invention (with chromium hexacarbonyl and ammonia), a basic chemical reaction of a Cr(CO)6+b NH3→c Cr x O y N z+ d CO+e H 2 O+f CH 4+ g CO 2+ h N 2 must be assumed here (for the subsequent passivation, on the other hand, the equation Cr x O y C z+ d NH3→ would result cr x O y-a C z-b N c+ e H 2 O+f CO 2). The exact reaction can be influenced by the parameter space of the method.Furthermore, a strong minimization of the carbon content when using the method according to the invention (i.e. for the test structures S 2 to S 5) in comparison with the reference structure S 1 can be seen. It could be demonstrated here that with the method according to the invention the carbon content can be below 40 atomic percent, preferably below 30 atomic percent, particularly preferably below 20 atomic percent. The method according to the invention could therefore specifically bring about the reduction of the carbon fraction by 25 percent, preferably by 40 percent, particularly preferably by 60 percent (in comparison to a deposition without provision of the second gas). For explanation, ammonia as inversion molecule may have an advantageous effect which can be enhanced by a suitable parameter space. In the electron beam induced deposition of chromium with chromium hexacarbonyl, CO molecules can remain on the surface. By a high content of NH3in the gas phase, which can be ensured, for example, already by its property as inversion molecule, the probability of displacement of CO by NH3from the surface can be increased. This may result in less carbon being deposited in the deposit. These two effects (i.e. the preferred generation of chromium nitride or an increased nitrogen content and the reduction of the carbon content in the deposition material) can enable an optimized repair material during mask repair, which can better withstand the effects mentioned herein. Furthermore, a trend can be seen that the nitrogen content increases with an increase in the gas flow rate of the second gas. Since the nitrogen content decreases comparatively slightly with a higher gas flow rate of the ammonia (of 0.4 sccm) in test structure S 5, an advantageous gas flow rate of the second gas at 0.25 sccm can be deduced.As mentioned herein, the analyzed chromium content is not shown in FIG. 4 b. The chromium content of the test structures S1, S2, S3, S4, S5 showed no significant differences or fluctuations and was measured in the range of about 15-25 at.%. Thus, there is an indication that the method of the invention does not appreciably affect the chromium content. It should be noted that a higher chromium content could also be established by the method according to the invention (e.g. a chromium content of at least 25 at. %, at least 30 at. %, at least 35 at. %). It is furthermore conceivable for the chromium content of the deposition material to also be at least 50 at. %, at least 70 at. % or at least 80 at. % (or also to be between 35 at. % and 99 at. %). It is also conceivable that the chromium content can be below 15 at.%. Furthermore, an increased oxygen content in the test structures S 2, S 3, S 4, S 5 compared to the reference structure S 1 (without provision of the second gas) could be detected. The oxygen content could be increased by at least a factor of 1.5 or at least a factor of 2, for example.Furthermore, there is an indication that an increased nitrogen content can be generated in the deposition material over a longer dwell time of the electron beam (in the case of test structure S 4), in comparison to a shorter dwell time of the electron beam (in the case of test structures S 2, S 3, S 5).With regard to the results from FIG. 4, a nitrogen content in the produced material of at least 5 at. %, preferably at least 10 at. %, particularly preferably at least 20 at. % can accordingly be achieved or aimed for by means of the method according to the invention. The nitrogen content of the material produced can furthermore be at least doubled, tripled, multiplied and / orteenfold compared to production using a method from the prior art (e.g. without provision of the second gas) by means of the method according to the invention.The reduced dipole character of the ammonia can reduce the absorption probability of the ammonia on the substrate surface with respect to nitrogen dioxide. As a consequence, the concentration of ammonia molecules in the gas phase above the substrate surface may be increased. This can increase the probability that the desired nitrogen-containing deposition material is already formed in the gas phase. This can possibly be explained by the fact that an exchange of CO ligands on the chromium atom with NH 3- ligands takes place already in the gas phase. The following reaction can take place, among others: Cr(CO) 6+ n NH 3 → Cr(CO) 6-n( NH 3)n+ n CO, where n=1 to 6.For additional analysis, two further test structures E1 and E2 were produced, the test structure E2 being produced with a parameter space of the method according to the invention. The test structures E 1, E 2 were produced with a length and width of 20 μm x 20 μm and with a height of 10 nm to 20 nm. The test structures were analyzed by X-ray photoelectron spectroscopy (abbreviation XPS). Carbon C, oxygen O, chromium in an oxide compound Cr-Ox, metallic chromium Cr-Met, nitrogen N, total chromium content Cr-sum were investigated. The test structure E 1 was produced as a reference structure by a known method, which comprises providing chromium hexacarbonyl as the first gas and providing nitrogen dioxide as the second gas, wherein nitrogen dioxide is not capable of performing an inversion oscillation (at the process temperature of the electron beam-induced deposition). The test structure E 1 was thereby produced with a gas flow rate of the second gas (i.e. of the nitrogen dioxide) of 0.5 sccm and a dwell time of the electron beam of 5 μs. The test structure E2 was produced with chromium hexacarbonyl as the first gas and ammonia as the second gas via electron beam-induced deposition. The parameter space in the production method of the test structure E 2 was as follows: a gas mass flow of the second gas (i.e. ammonia) of 0.25 sscm, a process temperature of 17° C., a dwell time of the electron beam of 5 μs, a frame refresh time (i.e. frame refresh time) of 2500 μs. Furthermore, the production method of the test structure E 2 was carried out at an acceleration voltage of the electron beam of between 0.3 kV and 1 kV, for example in the range of 0.6 kV (kV: kilovolt) and a current intensity of the electron beam of between 1 pA and 100 pA, for example in the range of 28 pA (pA: picoampere). The pixel grid was traversed in such a way that the height of the test structure was in the range from 10 nm to 20 nm. A raster pattern was selected in which every tenth row was addressed sequentially in order to minimize depletion of the process gas. In some examples for forming the test structure E 2, the gas flow rate of the second gas (e.g., ammonia) may be between 0.1 sccm and 2 sccm, between 0.1 sccm and 1 sccm, and / or between 0.1 sccm and 0.5 sccm. The process temperature can comprise the (pretempered) temperature of the first gas and the (pretempered) temperature of the second gas. In some examples for producing the test structure E 2 the dwell time of the electron beam may comprise a range between 0.1 μs and 10 μs, between 0.3 μs to 7 μs and / or between 1 μs to 6 μs. In some examples, the frame refresh time may be between 0.5 ms and 5 ms, between 0.7 ms and 4 ms, and / or between 1 ms and 3 ms. Furthermore, it is also conceivable that the process temperature (of the first and / or second gas) is in the range from 0° C. to 60° C., as well as between 10° C. and 40° C., between 12° C. and 30° C., and / or between 12° C. and 20° C.In the additional analysis, the test structure E2 was found to have about 23 atomic percent (at %) nitrogen. It was thus possible to demonstrate that an increased nitrogen content in test structure E2 can be achieved via a parameter space of the method according to the invention. This also implies that the method according to the invention enables the generation of a high chromium nitride content in the deposition material. This effect can be advantageous in particular in the context of a repair process RV, since chromium nitride can be a resistant material to aggressive chemical / physical environmental conditions.Furthermore, the oxygen content was significantly lower in the test structure E 2 than in the reference structure E 1. The reduction in oxygen level corresponded approximately to the nitrogen level found in test structure E2. It can thus be concluded that by reducing the oxygen content, the nitrogen content could be increased approximately accordingly.The carbon content was minimally increased in test structure E2 compared to reference structure E1, which was at a low level (in the single-digit percentage range) in both test structures. It could be found here that the carbon content (oxygen content) of reference structure E 1 had a lower (higher) level than reference structure S 1 from FIG. 4 b. In this regard, it should be mentioned that the reference structure E 1 was produced via a deposition process with nitrogen dioxide as additive gas (and chromium hexacarbonyl as first gas), wherein the reference structure S 1 from FIG. 4 bwas produced via a deposition process without an additive gas (and therefore exclusively with chromium hexacarbonyl as deposition gas). It could thus be shown that when using an inversion molecule (in this case ammonia) instead of nitrogen dioxide as additive gas, no significant change in the carbon content is caused (and the carbon content can still remain low with the method according to the invention). Furthermore, the proportion of metallic chromium in test structure E2 could be screened in comparison with E1. The proportion of chromium in an oxide compound was somewhat lower in test structure E2 than in test structure E1.A reduction in the chromium oxide content can be advantageous with respect to an EUV lithography method. Possible chemical reactions that can take place between chromium oxide (e.g. Cr 2 O 3) and hydrogen in an EUV lithography apparatus include, for example, the partial reduction of chromium (Cr 2 O 3+ 3 H 2 ->2 Cr+3 H 2 O) as well as a local change in the oxidation state of chromium atoms. For example, the oxidation state of Cr(III) can change to Cr(II), Cr(I) and / or Cr(0). It is likewise conceivable that the oxidation state of Cr(IV) can change to Cr(III), Cr(II), Cr(I) and / or Cr(0). By locally partially changing the oxidation state of the chromium atoms, the heterogeneity of the material can be increased, so that its chemical and physical durability is reduced. It is also conceivable that oxygen is removed from the chromium oxide-containing material, for example by reactive hydrogen species in an EUV lithography apparatus, as a result of which defects can form in the solid body. These flaws can accelerate erosion of the material in subsequent cleaning processes. The reduction of the chromium oxide content by means of the process according to the invention can therefore minimize the effects mentioned. It is furthermore conceivable that the increased chromium nitride content, which can be produced by the method according to the invention, additionally minimizes the effects mentioned which are associated with a specific chromium oxide fraction.In summary, the repair material produced by the method according to the invention can be more resistant or more resistant to the influences to which the EUV mask can be exposed during processing (as mentioned herein, for example) during a repair of an EUV mask.The test results of the chromium nitride-containing deposition material produced suggest an increase in the durability, resistance and stability of the material to external chemical / physical influences in comparison with conventionally produced material. When repairing the EUV mask via the method 300 (or a method according to the first and / or second aspect), this can be advantageous in particular when using the repaired EUV mask for a lithographic method. For example, this may allow an increase in the number of DUV and / or EUV exposure cycles (of the lithographic method) that a repaired lithographic mask may pass through before the optical properties of the repaired location have changed such that it no longer meets the required specifications with respect to the critical dimension CD (critical dimension). Further, this may result in a reduction in damage from downstream processes, such as mask cleaning. In particular, stability with respect to cleaning processes can be present which comprise at least one of the following steps: removal of contamination, removal of carbon-containing contamination, removal of particles, application of oxidizing agents, application of acids, application of oxidizing acids, application of acids with oxidizing agents, application of a cleaning solution with pH<7, application of H 2 SO 4( e.g. with H 2 O 2), application of UV light, application of light which can react with cleaning chemicals and activates them, application of a plasma, application of an oxygen plasma, application of a basic solution, application of a solution with pH>7, application of a solution containing NH 3-. Furthermore, the method according to the invention (of the first and / or second aspect) can enable a reduction in the erosion or degradation of the deposit (at the repaired location). The degradation can include at least one of the following: global progressive erosion, (successive) exfoliation, local erosion, simultaneous loss of large areas of the deposit, loss of the desired optical properties.Furthermore, the following exemplary embodiments are possible for the method according to the invention of the first and / or second aspect. For example, it is conceivable that the second gas comprises at least one of the following: a reducing additive precursor; an additive precursor comprising hydrogen; an additive precursor comprising at least one nitrogen atom and at least one hydrogen atom. In a further example, it is conceivable that the deposition material produced according to the invention and the (passivated) surface material can be compacted or stabilized by electron beam bombardment (e.g. in separate processing).In some examples, an accelerating voltage of the electron beam of 0.1 to 2 kV, or 0.2 to 1.5 kV, or 0.3 to 1 kV may be used. In this case, a current intensity of the electron beam of 28 pA can be used in each case. However, current intensities in other ranges are also conceivable, for example 1 to 100 pA, 5 to 80 pA or 10 to 60 pA.FIG. 5 schematically shows in section an exemplary device 500 according to the invention. The apparatus 500 can be configured such that it can carry out the method 300 or a method of the first and / or second aspect of the invention. In one example, the apparatus 500 of FIG. 5 includes a mask repair apparatus for repairing lithographic masks. The apparatus 500 may be used to locate and repair mask defects. The device 500 can comprise parts such as the device described in U.S. Pat. No. 2020 / 0 103 751 A1 (see FIG. 3A corresponding therein).The exemplary apparatus 500 of FIG. 5 may comprise, for example, a scanning electron microscope (SEM) 501 for providing a particle beam, which in this example is an electron beam 509. An electron gun 506 may generate the electron beam 509, which may be directed by the beam forming elements 508 and 512 as a focused electron beam 510 onto a lithographic mask 502 disposed on a sample stage 504 (or stage, chuck). Furthermore, parameters / properties of the electron beam can be adjusted in a targeted manner via the scanning electron microscope (e.g. acceleration voltage, dwell time, current intensity, focusing, spot size, etc.). The parameters of the electron beam may be adjusted, for example, in relation to a parameter space of the methods described herein. The electron beam 509 may serve as a power source to initiate a local chemical reaction on a working area of the lithographic mask 502. This can be used, for example, for the methods described herein (e.g. for the implementation of the electron beam-induced deposition of the first aspect, the electron beam-assisted passivation of the second aspect). Further, the electron beam 509 may be used to capture an image of the lithographic mask 502. The device 500 can in this case comprise a detector 514 for detecting electrons.In order to carry out the corresponding methods mentioned herein, the exemplary apparatus 500 of FIG. 5 can have at least two storage containers for at least two different processing gases or precursor gases. The first storage container G 1 can store the first gas. The second reservoir G 2 may store the second gas including molecules capable of performing inversion vibration. The second gas can also be understood here as an additive gas. Further, in the exemplary apparatus 500, each reservoir G 1, G 2 has its own gas delivery system 532, 547, which may terminate with a nozzle (i.e., nozzle) near the point of impact of the electron beam 510 on the lithographic mask 502. Each storage container G 1, G 2 can have its own control valve 546, 531 in order to control or control the amount of the corresponding gas provided per unit time, i.e. the gas flow rate of the corresponding gas. This can be effected in such a way that the gas mass flow is adjusted in a targeted manner at the location of the incidence of the electron beam 510. Further, in one example, the apparatus 500 may include further storage containers of additional gases, which may be added to the method of the first and / or second aspect as one or more (additive) gases (e.g. oxidizing agents, reducing agents, halides as described herein). The apparatus 500 of FIG. 5 may include a pump system 522 for generating and maintaining a pressure required in the process chamber 585.The apparatus 500 may further comprise a control unit 518, which may be part of a computer system 520, for example. The apparatus 500 may be configured, in one example, such that the computer system 520 and / or the control unit 518 controls the process parameters of the methods disclosed herein. This configuration can make it possible for the methods according to the invention mentioned herein to be able to proceed in a targeted manner and also in an automated manner, for example without manual interventions. This configuration of the apparatus 500 can be realized or enabled, for example, via the computer program according to the invention described herein.Furthermore, at least one of the following can be included as the first gas (e.g. as deposition gas) in the invention: (metal, transition element, main group) alkyls such as cyclopentadienyl (Cp) or methylcyclopentadienyl (MeCp) trimethyl platinum (CpPtMe 3 or. MeCpPtMe 3), tetramethyltin SnMe 4, trimethylgallium GaMe 3, ferrocene Cp 2 Fe, bis-aryl-chromium Ar 2 Cr and further such compounds. Further, at least one of the following may be included as the first gas in the invention: (metal, transition element, main group) carbonyls such as chromium hexacarbonyl Cr(CO) 6, molybdenum hexacarbonyl Mo(CO) 6, tungsten hexacarbonyl W(CO) 6, dicobalt octacarbonyl Co 2( CO)s, Trirutheniumdodecacarbonyl Ru 3( CO) 12, iron pentacarbonyl Fe(CO) 5 and other such compounds. Further, any one of the following may be included as the first gas in the invention: (metal, transition element, main group) alkoxides such as tetraethoxysilane Si(OC 2 H 5)4, tetraisopropoxytitanium Ti(OC 3 H 7)4 and other such compounds.Further, at least one of the following may be included as the first gas in the invention: (metal, transition element, main group) halides such as WF 6, WCl 6, TiCl 6, BCl 3, SiCl 4 and other such compounds. Furthermore, at least one of the following (metal, transition element, main group) complexes such as copper bishexafluoroacetylacetonate Cu(C 5 F 6 HO 2)2, dimethyl gold trifluoroacetylacetonate Me 2 Au(C 5 F 3 H 4 O 2) and further such compounds can be included as the first gas in the invention. Further, any of the following may be included as the first gas in the invention: organic compounds such as CO, CO 2, aliphatic or aromatic hydrocarbons, components of vacuum pump oil, volatile organic compounds and other such compounds.

Claims

A method of processing an object for lithography, comprising: providing a first gas; providing a second gas, wherein the second gas has second molecules capable of performing an inversion oscillation; providing a particle beam on a working region of the object for generating a deposition material on the working region based at least in part on the first gas and the second gas; wherein the providing of the second gas is performed with a gas flow rate of less than 5 sccm, preferably less than 2 sccm, particularly preferably less than 0.5 sccm; wherein the first gas comprises first molecules comprising a carbonyl compound and / or wherein the deposition material comprises a chromium nitride and / or wherein the second molecules comprise H 2 N-NH 2 and / or wherein the second molecules comprise nitrogen and a halogen in a chemical compound and / or wherein the second molecules have a lower absorption probability in the working range than NO 2 molecules.Method according to claim 1, wherein the provision of the second gas takes place with a gas flow rate of at least 0.01 sccm, preferably at least 0.05 sccm, particularly preferably at least 0.1 sccm.Method according to one of the preceding claims, wherein the provision of the particle beam takes place with a residence time of the particle beam of 0.1 μs to 10 μs, preferably 0.3 μs to 7 μs.Method according to one of the preceding claims, wherein the provision of the first gas and / or of the second gas is effected in such a way that the deposition material is formed at least partially in a gas phase without the influence of the particle beam.The method of any preceding claim, wherein the first molecules comprise a metal carbonyl.The method of claim 5, wherein the metal carbonyl comprises a chromium carbonyl.The method according to any one of the preceding claims, wherein the chromium nitride comprises at least 10 atomic percent nitrogen, preferably at least 15 atomic percent nitrogen, particularly preferably at least 20 atomic percent nitrogen.Method according to one of the preceding claims, wherein the production of the deposition material takes place in such a way that a defect of the object is corrected.The method of claim 8, wherein the defect comprises a clear defect.A method of processing a surface material of an object for lithography, comprising: providing a second gas, the second gas having second molecules capable of performing an inversion oscillation; providing a particle beam on a working area of the object for passivating the surface material within the working area based at least in part on the second gas.The method of claim 10, wherein the method further comprises generating the surface material on the work area based at least in part on providing a first gas and the particle beam prior to passivating the surface material.The method of any of claims 10-11, wherein passivating comprises creating a passivation layer on the surface material.The method of any of claims 1-12, wherein the inversion oscillation comprises pyramidal inversion of the second molecules.The method of any one of claims 1-13, wherein the second molecules comprise a trigonal pyramidal geometry.The method of any of claims 1-14, wherein the second molecules comprise nitrogen and hydrogen in a chemical compound.The method of any one of claims 1-15, wherein the second molecules comprise ammonia, NH 3.The method of any of claims 10-16, wherein the second molecules comprise H 2 N-NH 2.The method of any of claims 10-17, wherein the second molecules comprise nitrogen and a halogen in a chemical compound.The method of claim 18, wherein the second molecules comprise at least one of the following molecules: NF 3, NCl 3, NI 3, NBr 3.The method of any of claims 1-19, wherein the second molecules comprise nitrogen, hydrogen, and a halogen in a chemical compound.The method of claim 20, wherein the second molecules comprise at least one of the following molecules: NH 2 X, wherein X comprises a halogen; NHX 2, wherein X comprises a halogen.Method according to any one of claims 10 - 21, wherein the second molecules have a lower absorption probability in the working area than NO 2 molecules.Method according to any of claims 1-22, wherein the particle beam comprises an electron beam.An apparatus for processing an object for lithography, comprising: means for providing a first gas; means for providing a second gas, the second gas having second molecules capable of performing an inversion oscillation; means for providing a particle beam; a computer system; a memory comprising a computer program comprising instructions which, when executed by the computer system, cause the computer system and / or the apparatus to perform a method according to any of claims 1-23.An object for lithography, the object having been processed according to a method of claims 1-23.A method for lithographic processing of a semiconductor-based wafer comprising: lithographic transferring a pattern associated with an object for lithography to the wafer, wherein the object has been processed according to a method of claims 1-23.A computer program comprising instructions which, when executed by a computer system, cause the computer system to perform a method according to any of claims 1-23 and / or according to claim 26.

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