Black Border Bridge

Abstract

The present invention relates, inter alia, to an object for lithography comprising a depression extending at least partially along an edge region of the object, which at least partially delineates a central region of the object from the edge region of the object, and comprising an electrically conductive connection bridging the depression between the central region and the edge region of the object.

Description

1. Technical area

[0001] The present invention relates to objects for lithography and methods for producing and contacting objects for lithography in order to provide a bridging electrically conductive connection of depressions in the object for lithography. 2. State of the art

[0002] As a result of the increasing integration density in the semiconductor industry, lithography masks (hereinafter also referred to as lithographic masks) must image increasingly smaller structures on wafers. On the lithography side, the trend toward increasing integration density is being addressed by shifting the exposure wavelength of lithography devices to ever smaller wavelengths.

[0003] Although lithographic masks are manufactured using state-of-the-art tools and in a controlled environment, it may still be necessary for a manufactured mask to contain spots or regions that do not meet the desired specifications (e.g., with regard to the mask's absorbing and / or phase-shifting transmission properties, resulting in an opaque defect, for example). Defects can also arise during the course of a mask's operation. This problem can be at least partially addressed by subjecting the mask in question to a repair process, e.g., a particle beam-based repair, in which excess material is removed and / or missing material is deposited.

[0004] Due to increasing integration density and the resulting shrinking of wafer structures, potential repairs of defects on the lithographic mask are becoming both more frequent and increasingly complex. This increase in complexity is due to the fact that the structure size of potential defects and associated repair areas is shifting toward ever smaller structures.

[0005] Typically, such defects are repaired using particle beam-induced repair processes in the presence of a process gas. This can involve, for example, ablation (e.g., by particle beam-based etching) of unwanted absorbing material from a lithographic mask and / or particle beam-based deposition of, for example, absorbing and / or phase-shifting materials on the lithographic mask. In both cases, precise control of the beam guidance of the charged particle beam is required to enable targeted manipulation of the lithographic mask.

[0006] A particle beam can be used, for example, as a beam of charged particles, which may include electrons and / or ions. The interaction of the charged particle beam with the lithographic mask can lead to an accumulation of charge carriers, at least locally present, on the lithographic mask. These charge carriers can, for example, generate a repulsive electric field for the particle beam, e.g., if the charge carriers causing the electric field have the same charge sign as the charged particles contained in the particle beam.

[0007] This repulsive opposing field, but equally attractive, can lead to undesirable deflection of the particle beam and negatively impact the targeted and precise manipulation of a lithographic mask. It is therefore necessary to ensure precise control over charge effects and the resulting electric fields of a lithographic mask.

[0008] A satisfactory dissipation of charge carriers present on the lithographic mask and thus ensuring precise control over the charge state of a lithographic mask cannot be adequately achieved with the means available at present.

[0009] The present invention is therefore based on the problem of providing improved control over the charge state of a lithographic mask in order to suppress resulting adverse effects on the manipulation process of a lithographic mask and thus to enable more precise manipulation of a lithographic mask, even with increasing integration density. 3. Summary of the invention

[0010] According to embodiments of the present invention, this problem is at least partially solved by an object for lithography and a method for producing an object for lithography and a method for examining and / or processing an object for lithography.

[0011] A first aspect of the present invention relates to an object for lithography. The object can comprise a recess extending at least partially along an edge region of the object, which recess at least partially delimits a central region of the object from the edge region of the object. Furthermore, the object can comprise an electrically conductive connection bridging the recess between the central region and the edge region of the object.

[0012] Bridging the recess can allow any (electrical) charge carriers potentially present in the central region of the object to be diverted to the edge region of the object, which can suppress the build-up of an opposing electric field in the central region of the object. It is also conceivable to divert the charge carriers from the object by contacting the edge region. In this way, improved control over an electric field present in the central region of the object can generally be achieved. Contacting does not have to be made in the central region, which contains functional structures (e.g., in the case of masks: pattern elements) that could easily be damaged in the process. It is therefore extremely advantageous to make contact in the edge region, as this can significantly reduce the risk of damage that could render the object unusable. In addition, this can enable contacting, for example,can be carried out reproducibly using an element of the object holder without the need for an additional component.

[0013] The object can be a lithographic mask, preferably an extreme ultraviolet (EUV) mask. In some cases, the lithographic mask can also have multiple central regions that are at least partially surrounded by a recess, as described above. For example, a lithographic mask can have multiple images, each arranged in a central region that is at least partially surrounded by a recess. A central region therefore does not necessarily have to be located at a geometric center of the object.

[0014] The object can have one or more functional structures on its front side, such as pattern elements that serve as absorbing and / or phase-shifting structures. The pattern elements can be arranged on a reflective structure. In this way, a lithographic mask according to the invention can be provided that enables improved control over charge carriers present in its central region (and a resulting electric field).

[0015] The recess may have a width of 100 µm to 10 mm, preferably 1 mm to 10 mm and particularly preferably 2 to 8 mm.

[0016] Such a dimensioning of the width of the recess can contribute to a delimitation of the central region of the object for lithography from the edge region of the object for lithography, e.g. to an optical isolation between the edge and central regions, as described herein.

[0017] The recess may have a longitudinal shape with a length that is at least twice, preferably at least five times, the width of the shape. In some exemplary applications, it is also possible for the longitudinal shape to have a length that is at least 10, 20, 30, 40, or even 50 times the width of the shape.

[0018] In this way, it is possible for the depression to extend over a significant length of the object.

[0019] The recess may have a depth of at least 100 nm, preferably at least 250 nm, at least 350 µm, or at least 1 µm. In some other exemplary applications, it is also possible for the recess to have a depth of at least 5 µm or, for example, more than 10 µm.

[0020] The recess may have a substantially constant depth (subject to manufacturing tolerances). Alternatively, the recess may have a variable depth.

[0021] The recess can completely enclose the central area of ​​the object. This allows a geometric demarcation of the central area of ​​the object from the peripheral area, e.g., to completely optically isolate the two areas from each other.

[0022] The recess may follow a substantially rectangular contour in a plan view of the object. A substantially rectangular contour can also be understood as a contour that may have, for example, technical or manufacturing-related curves on the side surfaces that converge at right angles.

[0023] Alternatively, the recess may have an at least partially curved contour in a plan view of the object. Thus, it may be provided that the recess has a substantially circular contour in a plan view of the object.

[0024] In some cases, the depression may not completely enclose the central region of the object, and the depression may be interrupted at least along a portion of the depression. In particular, in such a case, it is possible for the object to have more than one depression, and for the more than one depression to only partially enclose the central region of the object.

[0025] The electrically conductive connection can run between the central region and the edge region at least partially along the interrupted section of the recess. In this way, it is possible to efficiently establish an electrically conductive connection between the central region of the object and the edge region of the object without having to resort to additional electrically conductive materials filling the recess itself. For example, the recess can essentially completely optically isolate the edge and central regions from each other, while the electrically conductive connection electrically connects both regions.

[0026] The object may have reduced reflectivity along the recess, e.g., for an exposure wavelength of the object. The exposure wavelength may refer to a wavelength (or a wavelength spectrum) required for exposing the object for lithography during a lithography process. The exposure wavelength may preferably lie in an ultraviolet spectral range, e.g., in the EUV range.

[0027] In this way, it can be made possible to reduce the reflectivity of the object locally in a targeted manner. The recess can, for example, contribute to an optical isolation of the edge region of the object from the central region of the object or essentially create such optical isolation. During an exposure process of the object (e.g. during a lithography process), the recess can, for example, efficiently suppress a reflection of the exposure light from the edge region of the object into the central region of the object. In this way, disturbances that can be caused by the reflection of light from the edge region (which usually has no functional structures, such as absorber structures) can be suppressed, which prevents an undesirable deterioration in the function of the functional structures in the central region of the object.In this way, the accuracy and efficiency of the exposure process during lithography can be advantageously improved. The recess can, for example, be formed as a "black border hole" of an EUV mask.

[0028] The object may comprise a multilayer stack arrangement.

[0029] In a preferred embodiment, the multilayer stack arrangement may contain a plurality of repeating layer sequences. The respective layers of the multilayer stack arrangement may be aligned congruently with one another and stacked one upon the other.

[0030] At least one layer and / or at least one layer sequence of the multilayer stack arrangement, preferably the one closest to the front side of the object, can be reflective. In a further exemplary embodiment, more than one layer of the multilayer stack arrangement can be reflective. For example, the multilayer stack arrangement can form a Bragg mirror, e.g., for the exposure wavelength of the object.

[0031] The reflectivity of the at least one layer of the multilayer stack arrangement can be designed such that light which is incident from the front side of the object onto the at least one reflective layer of the multilayer stack arrangement is reflected back towards the front side of the object by the at least one reflective layer of the multilayer stack arrangement.

[0032] The recess may extend into the multilayer stack arrangement. It may therefore be possible for the recess to extend through at least one layer and / or a layer sequence of the multilayer stack arrangement.

[0033] Furthermore, it may be possible for the depression to extend into the multilayer stack arrangement but not into at least one layer of the multilayer stack arrangement, preferably not into one or more layers present on an underside of the multilayer stack arrangement (e.g., a layer of the multilayer stack arrangement which is furthest away from the front side of the object) and / or layer sequences.

[0034] Depending on the depth of the recess in the multilayer stack arrangement, it may be possible to specifically control the local reduction in the reflectivity of the multilayer stack arrangement. Thus, it may be possible for a recess extending into N layer(s) of the multilayer stack arrangement to be associated with a lower local reflectivity than a comparison recess extending only into N-1 layers of the multilayer stack arrangement. Conversely, it may be possible for a recess extending N layers into the multilayer stack arrangement to be associated with a higher local reflectivity than a comparison recess extending N+1 layers into the multilayer stack arrangement.

[0035] The recess can extend through the multilayer stack assembly. In this way, the local reflectivity of the recess can be reduced to a minimum.

[0036] The electrically conductive connection can electrically connect at least one layer of the multilayer stack arrangement across the recess. In an exemplary application, the at least one layer of the multilayer stack arrangement can be configured to be electrically conductive.

[0037] The electrically conductive connection can preferably electrically connect a bottom layer of the multilayer stack arrangement, which is located furthest from the front side of the object, in the central region of the object to a bottom layer of the multilayer stack arrangement in the edge region of the object. Additionally or alternatively, it can also be provided to electrically connect a first or more layers above the bottom layer of the multilayer stack arrangement in the central region of the object to a corresponding layer of the multilayer stack arrangement in the edge region of the object.

[0038] The recess can extend at least partially into a substrate layer arranged beneath the multilayer stack arrangement. This enables particularly good optical decoupling. The substrate layer can be configured, for example, as an LTEM (low thermal expansion material) layer.

[0039] The substrate layer preferably comprises or is made of a non-electrically conductive material. The substrate layer can be designed such that it is substantially non-reflective, e.g., at an exposure wavelength.

[0040] The object may further comprise at least one electrically conductive layer extending at least partially beneath the recess. The electrically conductive layer may have a substantially constant thickness. The electrical connection may, for example, be provided by such a layer, so that it need not be limited to a small diameter.

[0041] The recess can be designed such that it does not extend into the electrically conductive layer. This allows for the provision of an electrically conductive structure extending beneath the recess, the electrically conductive properties of which are not affected by the provision of the recess in the object. This allows for advantageous coexistence of the recess (and thus, for example, a local reduction in the object's reflectivity) and the possibility of discharging charge carriers potentially present in the object's central region to the object's edge region.

[0042] The electrically conductive layer can be arranged below the multilayer stack arrangement and preferably above the substrate layer.

[0043] The surface area of ​​a surface of the electrically conductive layer can be identical to the surface area of ​​the multilayer stack arrangement (in a plan view of the object). Alternatively, the surface area of ​​the electrically conductive layer can be smaller than the surface area of ​​the multilayer stack arrangement. Alternatively, the surface area of ​​the electrically conductive layer can be larger than the surface area of ​​the multilayer stack arrangement.

[0044] The electrically conductive layer is preferably arranged in the object such that it is at least partially located in the central region of the object and extends at least partially into the edge region of the object. This allows the electrically conductive layer to support the dissipation of charge carriers potentially present in the central region of the object into the edge region.

[0045] The at least one recess can be bridged in an electrically conductive manner along its entire length. This can advantageously enable a uniform electrically conductive connection bridging the connection across the entire longitudinal extent of the recess and thus contribute to a reliable and controlled dissipation of charge carriers potentially present in the central region of the object into the edge region of the object. This can be achieved, for example, with the aid of a layer explained herein.

[0046] Alternatively, the recess can be provided in such a way that it is not completely electrically conductively bridged along its entire length. In other words, it is possible for at least a portion of the recess's length to be non-electrically conductively bridged.

[0047] The electrically conductive connection bridging the recess can have a substantially constant thickness.

[0048] The electrically conductive connection can be a material with a conductivity of > 10 -2 S / cm, preferably > 10 -1 S / cm, particularly preferably > 1 S / cm or even > 10 S / cm. The electrically conductive connection bridging the connection may comprise a semiconducting material.

[0049] Additionally or alternatively, the electrically conductive connection bridging the connection may also comprise at least one metallic material. In this case, it may be possible for the achievable conductivity of a material of the connection to exceed 10 S / cm and, for example, be greater than 10 4 S / cm, 10 5 S / cm, 10 6 S / cm or even greater than 10 7 S / cm.

[0050] The thickness of the electrically conductive connection bridging the recess and the bridged distance (e.g., given by the width of the recess) can be interrelated. Thus, a smaller selected thickness of the electrically conductive connection can be compensated for by a smaller bridging distance (width of the recess) to still ensure a sufficiently low resistance of the bridging electrically conductive connection. Furthermore, if the bridging electrically conductive connection is not provided completely along the extension of the recess (as previously described), a resulting reduction in the conductance of the bridging electrically conductive connection can be compensated for by increasing the thickness of the material used to provide the bridging electrically conductive connection, thus counteracting a reduction in conductance.

[0051] The object may further comprise an electrical contact point arranged in the edge region of the object, which is configured to dissipate a charge present on the object, preferably in the central region, through electrical contact. The bridging electrically conductive connection may be electrically conductively connected to the contact point.

[0052] This can enable a defined diversion of charge carriers potentially present in the object's central region to a predefined potential (e.g., a ground potential or a predefined countervoltage, which can enable electrostatic suction of charge carriers from the object). In this way, a static charge on the object caused by charge carriers potentially present in the object's central region can be efficiently and controlledly reduced and / or prevented, which can contribute to improved manipulation (e.g., repair of the object).

[0053] Furthermore, the targeted placement of the electrical contact point in the edge area of ​​the object can prevent undesired damage to and / or influence on the central area of ​​the object (in which functional structures may be located).

[0054] By contacting the contact point, it is also possible to generally set the central area to a predetermined potential, e.g. to influence a particle beam impinging on the object.

[0055] The at least one contact point can be arranged on the front side of the object.

[0056] Attaching at least one contact point on the front side of the object can enable easier contacting of the object with a predefined potential.

[0057] The at least one contact point can be arranged on the back of the object. If the object has a multilayer stack arrangement, the at least one contact point arranged on the back of the object can be connected to the bridging electrically conductive connection via a via structure. A contact point on the back can enable repeatable contacting, e.g., with the aid of an object holder, which can be equipped with a contact point at a corresponding location, on which the contact point of the object can automatically rest when the object is inserted.

[0058] The at least one contact point can also be arranged on a side surface of the object. The side surface can be arranged transversely to a surface arranged on the front side of the object and can be located laterally on the object.

[0059] Attaching the at least one contact point to the side surface of the object can help ensure that an optical property of the object (e.g., in transmission) is not significantly influenced by the at least one contact point. Furthermore, it can enable repeatable contacting, e.g., with the aid of an object holder, which can be equipped with a contact point at a corresponding location, against which the contact point of the object automatically abuts and / or rests when the object is inserted.

[0060] A further aspect of the present invention relates to a method for producing an object for lithography. The method may comprise providing an object for lithography that has a recess extending at least partially along an edge region of the object, which recess at least partially delimits a central region of the object from the edge region of the object.

[0061] The method may further comprise creating an electrically conductive connection bridging the recess between the central region and the edge region.

[0062] In this way, an object according to the invention can be provided which enables a controlled dissipation of charge carriers potentially present in the central region of the object into the edge region of the object and can thus have improved manipulation properties (e.g., repair properties). For example, an object can be provided which has a recess that serves for optical isolation. The central and edge regions can then be conductively connected to one another by creating the electrical connection, which can, for example, be provided only locally at a portion of the recess, without significantly disrupting the optical isolation.

[0063] Providing the electrically conductive connection may comprise particle beam-induced deposition of an electrically conductive material along at least a portion of the recess.

[0064] The electrically conductive material can preferably be selected such that the reflectivity properties of the object are not significantly affected by deposition of the electrically conductive material.

[0065] The use of particle beam-induced deposition of the electrically conductive material can enable precise deposition of the electrically conductive material along at least a portion of the recess. Thus, improved coexistence between an electrically conductive connection of the central region of the object and the edge region of the object, as well as optical isolation of the central region of the object and the edge region of the object, can be provided.

[0066] The particle beam-induced deposition may comprise providing a particle beam and providing a precursor gas in an environment of the at least one portion of the recess. Furthermore, the deposition may comprise directing the particle beam onto the at least one portion of the recess.

[0067] The electrically conductive connection can be provided on a substrate layer arranged under a multilayer stack of the object.

[0068] The electrically conductive connection can be provided in such a way that the electrically conductive connection electrically connects at least one layer of the multilayer stack arrangement across the recess.

[0069] A further aspect of the present invention relates to a method for producing an object for lithography. The method may comprise providing an object for lithography with an electrically conductive layer. Furthermore, the method may comprise creating a depression that runs at least partially along an edge region of the object and at least partially delimits a central region of the object from the edge region of the object. The depression does not extend through the electrically conductive layer, so that an electrically conductive connection between the central region and the edge region of the object is maintained.

[0070] By providing the object with the at least one recess that does not extend through the electrically conductive layer, a simplified manufacturing process for the object can be enabled, since providing the object with the recess does not have to be followed by an explicit step of creating a bridging electrically conductive connection of the recess (e.g., by means of particle beam-based deposition of an electrically conductive connection). In this way, a simplified and cost-effective manufacturing process for the object can be provided without having to forego the advantages of a controlled dissipation of charge carriers present in the central region of the object into the edge region of the object and of an optical isolation of the central region of the object from the edge region of the object.

[0071] The recess can be introduced into the object using a chemical etching process. Additionally or alternatively, it is possible to introduce the recess into the object using a particle beam-induced etching process (in the presence of a process gas).

[0072] The method may further comprise providing at least one electrical contact point, preferably in the edge region of the object, which is electrically conductively connected to the electrically conductive connection.

[0073] Another aspect of the present invention relates to a method for examining and / or processing an object for lithography. The method may comprise applying an electrical voltage to the object with respect to a reference potential, wherein the application may comprise contacting an edge region of the object, which is delimited from a central region of the object by a recess.

[0074] The electrical voltage can be applied, for example, via a voltage source. The voltage source can comprise, for example, a voltage source unit, which can, for example, have a corresponding circuit to be able to apply the electrical voltage to the object. The electrical voltage can be selected to be constant over time or can be applied in such a way that it changes over time (e.g., dynamically adapted to an expected and / or measured charging of the central region of the object for lithography).

[0075] The object can be examined and / or processed using a particle beam. Applying an electrical voltage can generate an electrical potential in the vicinity of the point of impact of the particle beam.

[0076] The point of impact can comprise a local point and / or local area on the object. The invention is therefore not limited to merely applying an electrical voltage to the object. Rather, the electrical voltage can be applied in such a way that an electrical potential is present locally—in the vicinity of the point of impact of the particle beam. For example, the electrical voltage can be applied in such a way that the electrical potential in the vicinity of the point of impact of the particle beam creates an electric field, which causes an interaction with the particle beam and thus influences it.

[0077] In one embodiment, the electrical voltage can comprise a value such that it is ensured that an electrical potential is present in the vicinity of the point of impact of the particle beam, which can influence the particle beam there. For example, the electrical voltage can be greater than a predetermined threshold voltage. The predetermined threshold voltage can be based, for example, on a simulation and / or experimental analysis.

[0078] In one embodiment, the electrical potential may, for example, comprise a negative electrical potential. However, it is conceivable that the electrical potential may also comprise a positive electrical potential.

[0079] In one embodiment, the electrical potential in the vicinity of the particle beam's point of impact can have the same polarity as the applied electrical voltage. For example, with a negative electrical voltage, the electrical potential in the vicinity of the particle beam's point of impact can also be negative (e.g., the point of impact can contain essentially negative charge carriers). For example, with a positive electrical voltage, the electrical potential in the vicinity of the particle beam's point of impact can also be positive (e.g., the point of impact can contain essentially positive charge carriers).

[0080] In one embodiment, the environment of the particle beam's impact point (described herein) can comprise a predetermined work area. The predetermined work area can, for example, comprise a local region of the object. For example, the work area can comprise a pixel grid, wherein the particle beam (at least partially) rasters the pixels of the pixel grid when processing the object. The pixel grid can, for example, comprise a repair shape, wherein the object is to be repaired with the particle beam within the repair shape.

[0081] In one embodiment, influencing the particle beam comprises decelerating the particles of the particle beam and / or reducing the landing energy of the particles of the particle beam. The first electrical voltage can thus be applied in such a way that deceleration of the particles of the particle beam and / or reduction of the landing energy of the particles of the particle beam occurs.

[0082] For example, it can be advantageous for processing the object if the particles of the particle beam are slowed down by forces emanating from the object, or if their landing energy on the object is reduced. For example, this can allow the particles to penetrate the object to a lesser depth (than without the initial electrical voltage being applied), which can be advantageous for processing the object.

[0083] Decelerating the particles and / or reducing their landing energy can be advantageous, for example, for particle beam-induced deposition and / or etching at the point of impact of the particle beam (as described herein) or can influence the particle beam-induced deposition and / or etching as a further process parameter. The invention can therefore also be used as a further adjusting screw for adapting particle beam-induced processes. Furthermore, decelerating the particles and / or reducing the landing energy can also be advantageous if the processing with the particle beam includes an image recording of the object (with the aid of the particle beam). For example, the quality of the image recording can be improved or adapted by decelerating the particles and / or reducing the landing energy.

[0084] The invention can also expand or facilitate the control of the particle beam. For example, it may be advantageous for technical reasons to provide the particles of the particle beam with a (relatively) high acceleration and / or high energy. This may be necessary, for example, to enable a specific property of the particle beam (e.g., a specific resolution) or to appropriately control the particle beam (e.g., to facilitate focusing). However, for processing the object, it may be advantageous (as described herein) for the particles to impact the object with a (relatively) low acceleration and / or low energy.

[0085] The electrical voltage can be applied via a positionable contact element.

[0086] The positionable contact element can, for example, comprise an electrically conductive contact element that can be positioned at one or more positions on the object (e.g., one or more contact positions). The positionable contact element can, for example, be used to contact the object at one or more contact positions, so that the first electrical voltage can be applied to the corresponding one or more contact positions. In one example, the contact element can be positioned at two or more positions on the object (e.g., at two or more contact positions). As described herein, the positionable contact element can be coupled to a voltage source that can, for example, provide the first electrical voltage.

[0087] In one embodiment, the positionable contact element may comprise a beam element. For example, the positionable contact element may comprise a leaf spring (also referred to as a cantilever). For example, the positionable contact element may comprise an electrically conductive probe. In one example, the positionable contact element may comprise a probe for atomic force microscopy (e.g., an AFM probe). The probe may, for example, be adapted to be able to apply the voltages mentioned herein (without, for example, damaging the probe).

[0088] In some examples, the electrical voltage can be applied via a fixed-position contact element. In particular, contact points of the object in its edge region enable such a solution. A corresponding contact point of a contact element can be provided at the location where the contact point of the object rests in the object holder. The contact element can, for example, be integrated into an object holder (or otherwise) of a device for examining and / or processing using a particle beam (e.g., electron beam).

[0089] The method may further comprise providing a particle beam having a predetermined particle beam current and determining a contact quality of the contact element based at least in part on the provided particle beam and an electric current flowing through the contact element.

[0090] For example, an electron beam with an electron current I T Furthermore, determining the contact quality may comprise measuring the electrical current through the contact element with a current measuring device (e.g. measuring a contact element current I K ). Measuring the contact element current I K can be done, for example, while the particle beam is being irradiated with the particle beam current I T is provided on the object. About the current measurement of I K a statement can be made as to the degree to which the provided particle beam current I Ta current flow through the object is induced by the contact element. This can be used to determine the contact quality. If, for example, there is a (good) contact, the current flow (induced by the particle beam) in the object can flow through the contact element without significant obstacles. If, for example, there is a comparatively poor contact, a comparatively lower current flow through the contact element can be expected. If, for example, there is no contact, the charges (induced by the particle beam) in the object cannot flow through the contact element (and a contact element current I K cause).

[0091] In one example, a particle beam with a predetermined energy can be provided to determine the contact quality. For example, it is conceivable that when the object is irradiated with the particle beam, a state can arise in which there is little or no current flow through the contact element, even though the contact element is actually in (good) contact with the object. For example, it is conceivable that the current of the incoming particle beam and a current of secondary electrons emanating from the object compensate each other. By using a predetermined energy for the incident particle beam, such a case can be avoided, so that if there is little or no current flow through the contact element, poor (or no) contact can also be assumed.For example, the energy of the particle beam can be chosen so that the secondary electrons and backscattered electrons emitted by the object do not compensate for the incoming particle stream.

[0092] The method may further comprise generating and / or removing a material of the object based at least partially on the particle beam, preferably with at least one gas provided on the object.

[0093] In one embodiment, this may comprise particle beam-induced deposition and / or particle beam-induced etching. For example, the particle beam-induced deposition may comprise electron beam-induced deposition. The particle beam-induced etching may, for example, comprise electron beam-induced etching. In these processes, at least one gas may be provided on the object, which is required, for example, for the corresponding reaction. The gas may, for example, comprise a deposition gas (e.g., a metal carbonyl). The gas may, for example, also comprise an etching gas (e.g., a halogen-based etching gas).

[0094] The influencing of the particle beam described herein can therefore also be used as a process variable in particle beam-induced deposition and / or etching. For example, the first and / or second electrical voltage can be applied during a particle beam-induced process to adapt the process.

[0095] The method can be used to repair a defect in the object. In one embodiment, the method described herein can be used in the particle beam-induced creation and / or removal of material to repair a defect in the object. For example, the object can comprise a lithographic mask, wherein repairing the defect can accordingly comprise a mask repair. The repair can, for example, comprise repairing areas where material of the object is missing and / or where excess material is present, even though this should not be the case by specification.

[0096] For example, the method can be understood as a method for repairing an object for particle beam lithography.

[0097] Missing material of the object (e.g., the mask) can be repaired, for example, via particle beam-induced deposition, in which the particle beam is influenced using a method described herein. Excess material of the object (e.g., the mask) can be repaired, for example, via particle beam-induced etching, in which the particle beam is influenced using a method described herein.

[0098] The functions described above may be implemented in hardware, software executed by a processor (e.g., as a computer program), firmware, or any combination thereof. When implemented in software executed by a processor, the functions may be stored on or transmitted over a computer-readable medium as one or more instructions or code. For example, the functions described herein may be implemented using software executed by a processor, hardware, firmware, hardwiring, or combinations thereof. Features that implement functions may also be physically arranged in different locations, including being distributed such that portions of the functions are implemented in different physical locations.

[0099] All aspects described with reference to a method may be provided as corresponding instructions of a computer program or corresponding device features, and vice versa. 4. Description of the drawings

[0100] In the following detailed description, currently preferred embodiments of the invention are described with reference to the drawings, wherein Fig. 1: shows an exemplary illustration of a cross-section through an object for lithography, which was provided with two cavities; Fig. 2A-2C: show exemplary illustrations of various embodiments for bridging an electrically conductive connection of a recess in an object for lithography; Fig. 3A-3G show exemplary illustrations of various embodiments for bridging an electrically conductive connection of a depression in an object for lithography, as well as for providing an electrically conductive contact of the object. 5. Detailed description of preferred embodiments

[0101] Currently preferred embodiments of devices and methods according to the invention are explained in more detail below. However, the use of the devices and methods according to the invention is not limited to the examples discussed below. Rather, they can be used generally for bridging a recess in an object for lithography.

[0102] Fig. 1 shows a cross-section through an exemplary object for lithography 100 comprising a functional structure 110 on its front side, a capping layer 120 arranged below the functional structure 110, a multilayer stack arrangement 130 (arranged below the capping layer 120) and a substrate layer 140 (arranged below the multilayer stack arrangement 130).

[0103] The functional structure 110 (e.g., a plurality of pattern elements) may be provided as an absorbing and / or phase-shifting structure such that, when the lithography object 100 is used for a lithographic application, light reflected by the lithography object 100 may be attenuated and / or phase-shifted.

[0104] The cover layer 120 arranged below the functional structure 110 can be provided in such a way that it can function as a protective layer for the side of the multilayer stack arrangement 130 facing it and thus, for example, scratching of a front side V of the multilayer stack arrangement 130 can be prevented.

[0105] The multilayer stack arrangement 130 can be provided in such a way that it is constructed as a Bragg mirror. This means that the multilayer stack arrangement 130 can be constructed from alternating, thin layers, each with different refractive indices. In the present example, two consecutive layers can form a layer sequence that is repeated in the multilayer stack arrangement. Light rays that strike the multilayer stack arrangement 130 from the front side V of the object for lithography 100 can be at least partially reflected at each interface of the multilayer stack arrangement 130. The Bragg mirror can, for example, have alternating layers with Mo and / or Si.

[0106] The substrate layer 140 may preferably be provided as an LTEM layer, which is preferably not electrically conductive and preferably consists of an amorphous material.

[0107] The exemplified object for lithography 100 was further provided with two depressions BB, which extend from the front side V of the object for lithography, ie the functional structure 110, through the cover layer 120 and further through the multilayer stack arrangement 130 into the substrate layer 140.

[0108] Furthermore, the two recesses BB are provided such that they geometrically delimit and optically isolate the central region Z of the object for lithography 100 from the edge region R of the object for lithography 100 (below the recesses BB, the boundary is shown by a hatched line), as described herein.

[0109] If charge carriers are now present in the central region Z of the object for lithography 100, they cannot be diverted to the edge region R of the object for lithography 100, since the provision of the recesses BB interrupted the electrical conductivity along the multilayer stack arrangement 130 (from the central region Z to the edge region R) in the region of the recesses BB. Likewise, a voltage cannot be easily applied in the central region by contacting the edge region.

[0110] A charged particle beam incident on the object for lithography 100 would thus lead over time to an accumulation of charge carriers in the central region Z of the object for lithography 100 and thus to an electrostatic field which can counteract the incident particle beam and thus change its trajectory in an undesirable manner.

[0111] It is not necessary for the exemplary lithography object discussed to include each of the layers 110-140. In some exemplary embodiments, the lithography object 100 may be provided, for example, without the multilayer stack arrangement 130 and / or without a cover layer 120.

[0112] Fig. 2A-2C show exemplary cross sections through an object for lithography 200 according to preferred embodiments of the present invention to illustrate the Fig. 1 to at least partially remedy the disadvantages discussed.

[0113] The object for the lithography 200 corresponds in its basic structure to the object for the lithography 100 as described above with reference to Fig. 1. The functional structure 210, the cover layer 220, the multilayer stack arrangement 230 and the substrate layer 240 functionally correspond to the respective layers 110-140 as described in relation to Fig. 1, although some of these elements may be omitted.

[0114] Fig. 2A shows a first exemplary embodiment for electrically conductively bridging a depression BB on an object for lithography 200.

[0115] In this first exemplary embodiment, the recesses BB are provided such that they do not extend completely through the multilayer stack assembly 230, but only extend through some of the layers of the multilayer stack assembly 230, starting from the functional structure 210.

[0116] Since the layers of the multilayer stack arrangement 230 can preferably be designed to be electrically conductive, this can enable the dissipation of potential charge carriers contained in the central region Z of the object for lithography 200 into the edge region R of the object for lithography 200 by the layers of the multilayer stack arrangement 230 not covered by the recesses BB (i.e., layers through which the recesses BB do not extend). Likewise, a voltage can be applied in the central region by contacting the edge region.

[0117] It is possible for the recesses BB to not extend through a single layer of the multilayer stack arrangement 230. In more preferred embodiments, the recesses BB may not extend through two or more layers (e.g., three, four, five, or more layers) of the multilayer stack arrangement 230. For example, the multilayer stack may remain with a height of 1 to 30 nm, 2 to 20 nm, or 4 to 15 nm.

[0118] In this way, a coexistence between an optical isolation of the edge region R of the object for lithography 200 and the central region of the object for lithography 200 as well as a controlled dissipation of possible charge carriers across the depressions BB can be achieved.

[0119] Since the multilayer stack arrangement 230 is designed to be reflective, the depressions BB can cause a local reduction (in the region of the depressions BB) in the reflectivity of the object for lithography 200 for light rays impinging on the depressions BB. The reflectivity can decrease in the region of the depressions by a factor of 2-10,000, preferably 5-5,000, relative to the reflectivity of the surface of the multilayer stack arrangement 230. The reflectivity can decrease, for example, to at least 0.05% or, in particular in the case of EUV masks with a high numerical aperture, to at least 0.02% relative to the reflectivity of the surface of the multilayer stack arrangement 230. The reflectivity can also be reduced by the specified values ​​compared to an average reflectivity of the object for lithography. The latter can be, for example, 50-70%, 55-65%, or approximately 60%.In some cases, the reflectivity in the area of ​​the depressions BB can also decrease by more than two orders of magnitude.

[0120] The reflectivity can preferably be selected to be less than 0.1%, preferably less than 0.05%. Especially for lithography objects, e.g., EUV masks, with a high aperture, the reflectivity can also be selected to be less than 0.02%. In this context, reflectivity is defined as the percentage of the light intensity (incident perpendicular to a surface of the lithography object) incident on the recessed area that is reflected back from the recessed area.

[0121] Fig. 2B shows a further exemplary embodiment according to the invention for bridging a depression BB in an object for lithography 200.

[0122] In the exemplary embodiments shown, the recesses BB were provided such that they extend from the functional structure 210 through the cover layer 220 and further completely through the multilayer stack arrangement 230 and finally into the substrate layer 240.

[0123] Since the substrate layer 240, as already mentioned above, is typically made of a non-electrically conductive material, providing the object for lithography 200 according to the illustrated embodiment would not allow charge carriers present in the central region Z of the object for lithography 200 to be diverted into the edge region R of the object for lithography 200. Control of an electric field caused by charge carriers present in the central region Z of the object for lithography 200 is therefore not satisfactorily possible.

[0124] In order to establish an electrically conductive connection between the central region Z of the object for lithography 200 and the edge region R of the object for lithography 200, an electrically conductive material 250 can be deposited in the provided depression BB (see left depression BB as in Fig. 2B).

[0125] In the exemplary embodiment, the electrically conductive material 250 is first deposited on the substrate layer 240 and extends from there, along the recess BB, from below (ie from the substrate layer 240) into the multilayer stack arrangement 230.

[0126] Since the substrate layer 240 itself is not electrically conductive, it may be necessary for the height of the deposited electrically conductive material 250 to be selected such that the layer of electrically conductive material 250 extends at least from a lower edge of the provided depression BB (i.e. from an interface to the substrate layer 240) as far as at least one electrically conductive layer of the multilayer stack arrangement 230 in order to ultimately be able to bridge the depression BB in an electrically conductive manner. In this way, layers of the multilayer stack arrangement can be connected to one another. The deposition can only take place locally, e.g. in order to connect the central and edge regions by means of a web-like connection. In other examples, this can also take place over the entire depression.

[0127] Fig. 2C shows a further exemplary embodiment according to the invention for bridging a depression BB in an object for lithography 200.

[0128] In this exemplary embodiment, the object for lithography 200 further comprises an electrically conductive layer 260 which is arranged below the multilayer stack arrangement 230 and above the substrate layers 240.

[0129] Materials that can be used for the electrically conductive layer include, for example, Ru, Ti, Hr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Hg, Ga, As, B, In, Ge, Sn, Pb, Fe, Co, Sb, Bi, C, Si, as well as chemical compounds or alloys of the aforementioned elements. The electrically conductive material 250 can be deposited in the recess BB, for example, using a particle beam-based process. The deposition of the electrically conductive material 250 can be carried out, for example, in the presence of at least one of the precursor gases listed below (and / or in the presence of another suitable precursor gas).

[0130] In the exemplary embodiment shown, the recesses BB were provided such that they extend from the functional structure 210 through the cover layer 220 and further completely through the multilayer stack arrangement 230. In the exemplary embodiment shown, the recesses BB do not extend into the electrically conductive layer 260 or the underlying substrate layer 240.

[0131] Since, in the exemplary embodiment shown, the depressions BB extend completely through the multilayer stack arrangement 230, the multilayer stack arrangement 230 can no longer be used to divert charge carriers potentially present in the central region Z of the object for lithography 200 into the edge region of the object for lithography 200.

[0132] By providing the object for lithography 200 with the electrically conductive layer 260, it is possible to divert charge carriers potentially present in the central region Z of the object for lithography 200 via the electrically conductive layer 260 from the central region of the object for lithography 200 into the edge region of the object for lithography 200.

[0133] Fig. 3A - 3G show exemplary cross sections through an object for lithography 300 according to preferred embodiments of the present invention to illustrate the Fig. 1 discussed disadvantages at least partially. In addition, the Fig. 3A-3G show possible embodiments of an electrically conductive contacting of the object for lithography in order to efficiently dissipate charge carriers potentially present on it.

[0134] It should be noted that the Fig. 3A-3G, the reference numerals 310, 320, 330, 340, 350, 360 and BB correspond in their assignment and meaning to the reference numerals 210, 220, 230, 240, 250, 260 and BB as they are used with reference to Fig. 2A-2C.

[0135] Fig. 3A shows an exemplary embodiment for electrically conductive bridging of a depression BB on an object for lithography 300, wherein the object for lithography is optionally additionally provided with a lateral contact 375, which can support a dissipation of charge carriers present on the object for lithography.

[0136] In the example shown, the object is prepared for lithography 300 with a depression BB, as already described with reference to Fig. 2B. In this way, the electrically conductive material 350 (such as the electrically conductive material 250) can make it possible to realize an electrically conductive bridging of the recess from a central region Z of the object for lithography 300 to an edge region R of the object for lithography 300. Transport of possible charge carriers present in the central region Z can thus take place at least in the region of the multilayer stack arrangement 330.

[0137] Charge carriers diverted from the central region Z into the edge region R can subsequently be diverted from the object for lithography 300 by means of the contact 375, which is preferably arranged on a lateral side of the object for lithography 300. The contact 375 can completely cover at least one lateral side of the object for lithography 300 or can only partially cover at least one side. The contact 375 can be electrically conductively connected at least to the multilayer stack arrangement 330. The lateral contact 375 can be provided as a spatially limited (e.g., rectangular or square) contact pad. Alternatively, it can be provided that the lateral contact 375 encircles the object for lithography 300 on lateral side surfaces of the object for lithography 300 (e.g., continuously or with at least one interruption).

[0138] Fig. 3B shows an exemplary embodiment for electrically conductive bridging of a depression BB on an object for lithography 300, wherein the object for lithography is optionally provided with a lateral contact 375, which can support a dissipation of charge carriers present on the object for lithography.

[0139] In the example shown, the object is prepared for lithography 300 with a depression BB, as already described with reference to Fig. 2C was described.

[0140] Since the recess BB in the present case extends to the conductive layer 360, the electrically conductive lateral contact 375 can be connected to the electrically conductive layer 360 instead of to the multilayer stack arrangement 330. In this way, in this example, charge carriers can also be dissipated from the central region Z of the object for lithography 300 to an edge region R and finally from the object for lithography 300 to, for example, a ground potential.

[0141] The lateral contact can be designed as already described with reference to Fig. 3A described.

[0142] Fig. 3C shows an exemplary embodiment for bridging an electrically conductive depression BB on an object for lithography 300, wherein the object for lithography 300 is additionally optionally provided with an (electrically conductive) contact 380 running on a lateral side of the object for lithography 300 and an (electrically conductive) contact 380 running below the object for lithography 300.

[0143] The specialization BB can, as already mentioned with reference to Fig. 2B and be at least partially filled with a corresponding electrically conductive material 350.

[0144] The contact 380 may be provided such that it comprises a first portion 380A, which is arranged at least partially along a (lateral) side surface of the object for lithography 300. The first portion 380A of the contact 380 may be electrically conductively connected at least to the multilayer stack arrangement 330. In addition, the first portion 380A of the contact 380 may also be (electrically conductively) connected to the cap layer 320.

[0145] The electrical contact 380 may additionally have a second section 380B, which is electrically conductively connected to the first section 380A. The second section 380B may be arranged at least partially beneath the substrate layer 340 (i.e., on the side of the object for lithography 300 facing away from the functional structure 310). The first section 380A of the electrical contact 380 and the second section 380B of the electrical contact 380 may be connected to form an integral, functional unit.

[0146] Fig. 3D shows an exemplary embodiment for electrically conductive bridging of a depression BB on an object for lithography 300, wherein the object for lithography is optionally additionally provided with a lateral contact 385, which can support a dissipation of charge carriers present on the object for lithography 300.

[0147] In the example shown, the object is prepared for lithography 300 with a depression BB, as already described with reference to Fig. 2B and at least partially filled with an electrically conductive material 350.

[0148] According to the present embodiment, the contact 385 can run along a side surface of the object for lithography 300 such that it is at least electrically conductively connected to the multilayer stack arrangement 330 and extends beyond the cover layer 320 (and contacts it, for example) at least partially along the functional structure 310 (and contacts it, for example). The contact 385 can also extend at least partially further on a top side of the functional structure 310 (e.g., on an element of the functional structure 310 arranged at least near the edge in a plan view of the object for lithography 300).

[0149] Fig. 3E shows an exemplary embodiment for electrically conductive bridging of a depression BB on an object for lithography 300, wherein the object for lithography is optionally additionally provided with a contact 380, which can support a dissipation of charge carriers present on the object for lithography.

[0150] The contact 380 can be as described with reference to Fig. 3C already described.

[0151] The contact 380 can be provided such that it can be placed, for example, on a sample stage 390 (e.g., in an SEM). An electrically conductive connection between the sample stage 390 and the contact 380 can be established by means of at least one contact point 390A mounted on the sample stage 390. A contact point 390A can, for example, be arranged at least on its side surface of the object for lithography 300. Additionally or alternatively, a contact point according to the invention can also be arranged on an underside of the contact 380.

[0152] In this way, charge carriers present on the object for lithography 300 can be diverted via, for example, an SEM apparatus (e.g., to a ground potential of the SEM).

[0153] It should further be noted that a possible charge dissipation via the contact 380 is not limited to possible contact points 390A, but that any point (e.g., by means of a cable) of the contact 380 can be used as a connection point for dissipating possible charge carriers present on the object for lithography 300.

[0154] It is noted that contacting by means of one or more contact points 390A, e.g. a sample stage, is also possible in the examples of Fig. 3A-D, F, and G (see below) is possible. Contact points 390A only need to be adjusted accordingly if necessary.

[0155] Fig. 3F shows an exemplary embodiment for electrically conductive bridging of a depression BB on an object for lithography 300, wherein the object for lithography 300 is additionally optionally provided with a contact 385, which can support a dissipation of charge carriers present on the object for lithography 300.

[0156] The contact 385 can be used as with reference to Fig. 3D can be provided as already described.

[0157] In addition, the contact 385 can be connected (at least temporarily) to an AFM tip A. The connection thus established can preferably be designed to be electrically conductive, so that charge carriers present on the object for lithography 300 can be discharged from the object for lithography 300 via the AFM tip A. A corresponding contact by means of an AFM tip is also possible for the examples according to Fig. 3A-E and Fig. 3G possible.

[0158] Fig. 3G shows an exemplary embodiment for electrically conductive bridging of a depression BB on an object for lithography 300, wherein the object for lithography 300 is additionally optionally provided with a contact 395, which can support a dissipation of charge carriers present on the object for lithography 300.

[0159] According to the present embodiment, an electrically conductive layer 360 may be provided below (ie on the side facing the substrate layer 340) the multilayer stack arrangement 330.

[0160] The recess BB can extend up to the electrically conductive layer 360, but does not penetrate it completely.

[0161] According to the present embodiment, the contact 395 (electrically conductive) can be connected to the electrically conductive layer 360. Preferably, the contact extends from an underside (i.e., a side facing away from the functional structure 310) of the object for lithography 300 through the substrate layer 340 to the electrically conductive layer 360. Preferably, the contact can extend through the substrate layer 340 in the form of a via.

[0162] The contact 395 may extend at least partially over an underside of the substrate layer 340 (e.g., in a rectangular, square, or circular shape, etc.).

[0163] It should also be noted that the above-described embodiments should not be considered in isolation. Rather, any combination of the described embodiments may be implemented within the meaning of the present invention.

[0164] For example, it can be provided that the contact 380, as described with reference to Fig. 3E, also extends over or towards a surface of the functional structure 310, such as with regard to the contact 385 with reference to Fig. 3D. In addition, it can be provided that in this combination the AFM tip A (as shown in relation to Fig. 3F) is used to remove any charge carriers that may be present on the object for lithography 300.

[0165] In some cases, it may also be provided to provide two contacts on the object for lithography 300. For example, the object for lithography may be provided with the contact 385 (as described with reference to Fig. 3D) with contact 395 (as described with reference to Fig. 3G). In this example, the AFM tip A can also be used (as described in relation to Fig. 3F) to remove charge carriers from the object for lithography 300.

[0166] Possible process gases (precursor gases) for the deposition of an electrically conductive compound can include, for example, (metal, transition element, main group) alkyls such as cyclopentadienyl (Cp)- or methylcyclopentadienyl (MeCp)-trimethylplatinum (CpPtMe3 or MeCpPtMe3), tetramethyltin SnMe4, trimethylgallium GaMe3, ferrocene Cp2Fe, bis-aryl-chromium Ar2Cr, and other such compounds. Furthermore, (metal, transition element, main group) carbonyls such as chromium hexacarbonyl Cr(CO)6, molybdenum hexacarbonyl Mo(CO)6, tungsten hexacarbonyl W(CO)6, dicobalt octacarbonyl Co2(CO)8, triruthenium dodecacarbonyl Ru3(CO) 12, iron pentacarbonyl Fe(CO)5, and other such compounds can be used. Furthermore, (metal, transition element, main group) alkoxides such as tetraethoxysilane Si(OC2H5)4, tetraisopropoxytitanium Ti(OC3H7)4, and other such compounds can be used. Furthermore, (metal, transition element, main group) halides such as WF6, WCl6, TiCl6, BCl3, SiCl4, and other such compounds can be used additionally or alternatively. Furthermore, it is possible to use (metal, transition element, main group) complexes such as copper bishexafluoroacetylacetonate Cu(C5F6HO2)2, dimethylgold trifluoroacetylacetonate Me2Au(C5F3H4O2), and other such compounds. It is also conceivable to use organic compounds such as CO, CO2, aliphatic or aromatic hydrocarbons, components of vacuum pump oil, volatile organic compounds and other such compounds.

[0167] Additional gases can also be added to the precursor gas. Examples of suitable additional gases include oxidizing agents such as O2, O3, H2O, H2O2, N2O, NO, NO2, HNO3, and other oxygen-containing gases. Additionally or alternatively, halides such as Cl2, HCl, XeF2, HF, I2, HI, Br2, HBr, NOCl, PCl3, PCl5, PF3, and other halogen-containing gases can also be used. Furthermore, it may also be possible to use gases with a reducing effect such as H2, NH3, CH4, and other hydrogen-containing gases.

[0168] Particularly advantageous are deposits (e.g. for the deposition of an electrically conductive compound) which start from Cr-, Pt-, C-, Mo- or W-containing precursors.

[0169] Furthermore, deposits (e.g. for the deposition of an electrically conductive compound) that can be removed from the mask by subsequent, e.g. wet-chemical cleaning processes, for example deposits containing Mo or C, are particularly advantageous.

Claims

[1] Object for lithography (100; 200), comprising: a recess (BB) extending at least partially along an edge region (R) of the object (100; 200), which at least partially delimits a central region (Z) of the object (100; 200) from the edge region (R) of the object (100; 200); an electrically conductive connection (250; 260) bridging the recess (BB) between the central region (Z) and the edge region (R) of the object (100; 200; 300). [2] Object for lithography (100; 200; 300) according to claim 1, wherein the object (100; 200) is a lithographic mask, preferably an extreme ultraviolet, EUV, mask. [3] Object for lithography (100; 200; 300) according to one of the preceding claims, wherein the recess (BB) has a width of 100 µm to 10 mm, preferably of 1 mm to 10 mm and particularly preferably of 2 mm to 8 mm. [4] Object for lithography (100; 200; 300) according to one of the preceding claims, wherein the recess (BB) has a longitudinal shape with a length which is at least twice as large, preferably at least five times as large as a width of the shape. [5] Object for lithography (100; 200; 300) according to one of the preceding claims, wherein the recess (BB) has a depth of at least 100 nm, preferably of at least 250 nm and particularly preferably of at least 1 µm. [6] Object for lithography (100; 200; 300) according to one of the preceding claims, wherein the recess (BB) completely encloses the central region (Z) of the object (100; 200; 300). [7] Object for lithography (100; 200; 300) according to one of the preceding claims, wherein the recess (BB) follows a substantially rectangular contour in a plan view of the object (100; 200; 300). [8] Object for lithography (100; 200; 300) according to one of claims 1-5, wherein the recess does not completely enclose the central region (Z) of the object (100; 200; 300), and the recess (BB) is interrupted at least along a portion of the recess (BB). [9] Object for lithography (100; 200; 300) according to claim 8, wherein the electrically conductive connection between the central region (Z) and the edge region (R) runs at least partially along the interrupted section of the recess (BB). [10] Object for lithography (100; 200; 300) according to one of the preceding claims, wherein the object (100; 200; 300) has a reduced reflectivity along the recess (BB) for an exposure wavelength of the object. [11] Object for lithography (100; 200; 300) according to one of the preceding claims, wherein the object (100; 200; 300) comprises a multilayer stack arrangement (130; 230). [12] The lithography object (100; 200; 300) of claim 11, wherein the recess (BB) extends into the multilayer stack assembly (130; 230). [13] Lithography object (100; 200; 300) according to one of claims 11 or 12, wherein the recess (BB) extends through the multilayer stack arrangement (100; 200). [14] Object for lithography (100; 200; 300) according to one of claims 11-13, wherein the electrically conductive connection (250; 260) electrically conductively connects at least one layer of the multilayer stack arrangement (130; 230) across the recess (BB). [15] Object for lithography (100; 200; 300) according to one of claims 11-14, wherein the recess (BB) extends at least partially into a substrate layer (140; 240) arranged below the multilayer stack arrangement (130; 230). [16] Object for lithography (100; 200; 300) according to one of the preceding claims, further comprising: at least one electrically conductive layer (260) which extends at least partially beneath the recess (BB). [17] Object for lithography (100; 200; 300) according to claim 16, dependent on any one of claims 11-14, wherein the electrically conductive layer (260) is arranged below the multilayer stack arrangement (130; 230) and preferably above the substrate layer (140; 240). [18] Object for lithography (100; 200; 300) according to one of the preceding claims, wherein the at least one recess (BB) is completely bridged in an electrically conductive manner along its extent. [19] Object for lithography (100; 200; 300) according to one of the preceding claims, wherein the electrically conductive connection (250; 260) has a conductivity of > 10 -2 S / cm, preferably > 10 -1S / cm, particularly preferably > 1 S / cm or even > 10 S / cm. [20] Object for lithography (100; 200; 300) according to one of the preceding claims, further comprising: an electrical contact point arranged in the edge region (R) of the object (100; 200), which is designed to discharge a charge present on the object (100; 200), preferably in the central region (Z), by electrical contact. [21] Object for lithography (100; 200; 300) according to claim 20, wherein the at least one contact point is arranged on a front side (V) of the object (100; 200). [22] Object for lithography (100; 200; 300) according to one of claims 20 or 21, wherein the at least one contact point is arranged on a back side (Rü) of the object (100; 200). [23] Object for lithography (100; 200; 300) according to one of claims 20-22, wherein the at least one contact point (375; 380; 385; 395) is arranged on a side surface of the object. [24] A method for producing an object for lithography (100; 200; 300), comprising: Providing an object for lithography (100; 200; 300) which has a depression which runs at least partially along an edge region (R) of the object (100; 200) and which at least partially delimits a central region (Z) of the object (100; 200) from the edge region of the object; Creating an electrically conductive connection bridging the recess (BB) between the central region (Z) and the edge region (R). [25] The method of claim 24, wherein creating the electrically conductive connection (250; 260) comprises: Particle beam-induced deposition of an electrically conductive material (250) along at least a portion of the recess (BB). [26] The method of claim 25, wherein the particle beam-induced deposition comprises: Providing a particle beam; Providing a precursor gas in an environment of at least one portion of the recess; Directing the particle beam onto at least one section of the recess (BB). [27] Method according to one of claims 24-26, wherein the provision of the electrically conductive connection (260) takes place on a substrate layer (140; 240) arranged under a multilayer stack arrangement (130; 230) of the object (100; 200; 300). [28] The method according to claim 27, wherein the providing of the electrically conductive connection is carried out such that the electrically conductive connection electrically conductively connects at least one layer of the multilayer stack arrangement (130; 230) across the recess (BB). [29] A method for producing an object for lithography (100; 200; 300), comprising: Providing an object for lithography (100; 200; 300) with an electrically conductive layer; Creating a depression which runs at least partially along an edge region (R) of the object (100; 200) and which at least partially delimits a central region of the object (100; 200) from the edge region (R) of the object (100; 200), wherein the depression (BB) does not extend through the electrically conductive layer (260), so that an electrically conductive connection between the central region (Z) and the edge region of the object (100; 200) is maintained. [30] A method according to any one of claims 24-29, further comprising: Providing at least one electrical contact point, preferably in the edge region of the object (100; 200; 300), which is electrically conductively connected to the electrically conductive connection. [31] A method for examining and / or processing an object (100; 200; 300) for lithography comprising: Applying an electrical voltage to the object (100; 200; 300) with respect to a reference potential, wherein the application comprises contacting an edge region (R) of the object (100; 200; 300), which is delimited by a recess from a central region (Z) of the object (100; 200; 300). [32] Method according to claim 31, wherein the examination and / or processing of the object (100; 200; 300) is carried out with the aid of a particle beam and the application of the electrical voltage causes an electrical potential in an environment of an impact point of the particle beam. [33] Method according to one of claims 31 or 32, wherein the electrical voltage is applied via a positionable contact element. [34] The method of claim 33, further comprising: Providing a particle beam with a predetermined particle beam current; Determining a contact quality of the contact element based at least in part on the provided particle beam and an electric current flowing through the contact element. [35] A method according to any one of claims 31-34, further comprising: Generating and / or removing a material of the object (100; 200; 300) based at least partially on the particle beam, preferably with at least one gas provided on the object (100; 200; 300). [36] Method according to one of claims 31-35, wherein the method is used to repair a defect of the object (100; 200; 300).

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