Power module and method for manufacturing a power module

Abstract

The invention relates to a power module (12) with a first circuit carrier (14) containing a carrier substrate (40), and a first conductor structure (18) with an external contact area (18.2), at least a second conductor structure (20A, 20B) with at least one external contact area (20A.2, 20B.2) and a further, third conductor structure (22) comprising an external contact area (22.2), with a first group (64) of semiconductor devices (42) and a second group (66) of semiconductor devices (42). A multifunctional frame (50) is assigned to the power module (12), wherein the groups (64, 66) of semiconductor devices (42) are arranged in a first level (60) which is spatially separated from a second level (62) in the multifunctional frame (50) in which the groups (64, 66) of semiconductor devices (42) are accommodated contacting contact surfaces (68, 70).

Description

Technical area

[0001] The invention relates to a power module comprising a first circuit carrier made of a carrier substrate and a first conductor structure with an external contact region, at least one second conductor structure with at least one external contact region, and a further, third conductor structure comprising an external contact region, further comprising a first group of semiconductor components and a second group of semiconductor components. Furthermore, the invention relates to a method for producing a power module. State of the art

[0002] In the current state of the art, power modules, for example, those installed in a power module bridge, are additionally molded. During molding, the power module is embedded in a rigid protective housing, for example, made of plastic (molding compound). The molding compound serves to enclose and protect the interior of the power module. However, these molding compound enclosures of the power module are not particularly resistant to cracking.

[0003] From DE 11 2017 004 390 T5 a power module is known which has the following features: an insulating substrate having a front side to which a power semiconductor element is attached; a base plate connected to a back side of the insulating substrate; a housing attached to the base plate and surrounding the insulating substrate; a cover attached to the housing and forming a sealed area; and a silicone gel serving as a filling element which fills the entire sealed area and has an internal stress acting as a compressive stress.

[0004] DE 10 2014 219 998 B4 discloses a power module, particularly for providing a phase current for an electric motor. The power module comprises a circuit carrier having a surface, at least two first contact surfaces on the surface, and at least two first power transistors, each of which has a ground contact surface. A first power transistor of the at least two first power transistors is arranged directly on each of the first contact surfaces and is electrically conductively connected to the respective first contact surface via its ground contact surface. Furthermore, the power module comprises a second contact surface on the surface and at least two second power transistors, each of which has a ground contact surface.The at least two second power transistors are arranged directly on the second contact surface and are electrically connected directly to the second contact surface via their respective ground contact surfaces. Furthermore, the power module comprises at least two third contact surfaces on the surface, wherein the at least two second power transistors each have a further contact surface on their sides facing away from the surface of the circuit carrier, and a second power transistor of the at least two second power transistors is electrically connected to one of the at least two third contact surfaces via its further contact surface.The at least two first contact surfaces and the at least two third contact surfaces are arranged alternately one after the other in a longitudinal direction of the power module, and the second contact surface is arranged next to the at least two first contact surfaces and the at least two third contact surfaces, the second contact surface having at least two contact regions, one of the at least two contact regions being located next to each of the at least two first power transistors. The at least two first power transistors each have a further contact surface on their sides facing away from the surface of the circuit carrier, and a first power transistor of the at least two first power transistors is electrically conductively connected via its further contact surface to the respective contact region of the at least two contact regions of the second contact surface located next to it.Here, the at least two contact regions of the second contact surface and the at least two second power transistors are arranged alternately one after the other in the longitudinal direction.

[0005] EP 2 418 925 B1 discloses an electrical contact between a flexible foil having at least one conductor track and at least one electrical contact of a sensor or control device. An end section of the flexible foil is electrically contacted at a contact point by heat input, with the end section of the flexible foil being positioned against protruding electrical contacts at the contact point. The end section of the flexible foil is designed as a wave pattern, in particular as a deflection element. Description of the invention

[0006] According to the invention, a power module is proposed which comprises a first circuit carrier made of a carrier substrate, with a first conductor structure having an external contact region, at least one second conductor structure having at least one external contact region, and a further, third conductor structure comprising an external contact region, with a first group of semiconductor components and a second group of semiconductor components. A multifunctional frame is assigned to the power module, wherein the groups of semiconductor components are arranged in a first plane that is spatially separated from a second plane in the multifunctional frame, in which contact surfaces that make contact with the groups of semiconductor components are accommodated.

[0007] The solution proposed according to the invention makes it possible to create a possibility for better cooling of the semiconductor components, since current-carrying paths can be relocated into the multifunctional frame and can be designed there either next to one another or one above the other, preferably in a low-inductance design, which can reduce switching losses.

[0008] In an advantageous embodiment of the power module proposed according to the invention, the multifunctional frame is mounted either above or below the power module in the Z direction. This allows for a greater degree of freedom in the layout of the power module.

[0009] In a further advantageous embodiment of the power module proposed according to the invention, current-carrying paths T+ bridge and T- bridge are preferably designed to be low-inductive and lie one above the other or next to each other in the multifunctional frame.

[0010] In a further advantageous embodiment of the power module according to the invention, the contact surfaces in the second level can be contacted using press-in pins. In this context, press-in pins represent a very robust contacting option and ensure a reliable electrical connection.

[0011] In a further advantageous embodiment of the power module according to the invention, the groups of semiconductor components arranged in the first level can also be contacted via press-in pins.

[0012] The power module proposed according to the invention is further characterized by the fact that the underside of the power module is connected to a cooling surface either via a sintered joint or via a solder or adhesive joint. Both the formation of a sintered joint and the formation of a flat, material-to-surface connection in the form of a solder or adhesive joint can achieve very good heat transfer and thus cooling of the semiconductor components of the power module.

[0013] In a further advantageous embodiment of the power module proposed according to the invention, the contact surfaces arranged in the second plane of the multifunctional frame have openings located above the semiconductor components of the groups of semiconductor components arranged in the first plane. This allows for contacting that takes place essentially in the vertical direction.

[0014] In the power module proposed according to the invention, the contact surfaces located in the second plane are electrically connected to the respective semiconductor components arranged in the first plane, for example via L-parts.

[0015] This connection option, which runs essentially in a vertical direction, allows an electrically conductive connection to be achieved between the first level and the second level of the arrangement consisting of the power module and the multifunctional frame.

[0016] In a further advantageous embodiment of this variant, a spacer is arranged between the L-shaped parts and a contact surface of the semiconductor element. Using the spacer allows for easy compensation of different heights and resulting tolerances. By using one or more spacers, the energy input during welding of the upper joining partners to the contact surface of the semiconductor components, for example, MOSFETs, transistors, GBDTs, or diodes, can be reduced, effectively preventing melting.

[0017] As an alternative to the use of L-shaped parts, the power module proposed according to the invention can be provided with a material-to-material connection between the multifunctional frame in the second plane and the semiconductor components of the group of semiconductor components arranged in the first plane. This is preferably implemented within an opening in the multifunctional frame as a welded connection, for example, on a joining partner, in particular a flat copper layer.

[0018] Furthermore, the invention relates to a method for producing a power module in which - a first conductor structure with a first contact area, - at least one second conductor structure with at least one external contact area and - a further, third conductor structure with an external contact area is provided, wherein - a multifunctional frame is assigned to the power module, - groups of semiconductor components are arranged in a first level, which are spatially separated from a second level in the multifunctional frame, - wherein contact surfaces contacting the groups of semiconductor components are arranged in the second level.

[0019] The solution proposed according to the invention allows the decoupling and spatial separation of current-carrying surfaces and semiconductor components that produce heat during operation, which may be MOSFETs, transistors or semiconductor switches or the like. Advantages of the invention

[0020] The power module proposed by the invention, or its inventive design, allows active areas and layout areas to be separated from one another. The arrangement of the multifunctional frame proposed by the invention, which is arranged, for example, above the power module, shifts the current flow from the power module to the multifunctional frame arranged above it. This results in improved cooling options for the semiconductor components. These can be transistors, flip-flops, MOSFETs, or the like. The solution proposed by the invention allows for improved cooling because larger distances can be realized between the semiconductor components.The solution proposed by the invention makes it possible to relocate current-carrying paths, such as the T+ bridge and / or T- bridge, into the multifunction frame and to design them there, either stacked or adjacent to each other, with low inductance. In particular, the option of designing the current-carrying paths as low-inductance current paths reduces switching losses.

[0021] The decoupling of the first and second levels in the power module and the multifunctional frame results in a compact design of the power module proposed by the invention. Furthermore, the selected superimposed arrangement of the two functional levels, namely the first level where the semiconductor components are arranged, and the second level where the current is carried, significantly improves production and increases the service life of the power module, as its complexity is significantly reduced.

[0022] In particular, when the semiconductor components in the first layer and the current-carrying contact surfaces in the second layer, i.e., within the multifunctional frame, are contacted using press-in pins, a robust electrical connection option for the aforementioned components is achieved. Furthermore, the press-in pin design is technically proven and can be robustly implemented in large-scale production.

[0023] Further following the solution proposed by the invention, the underside of the power module can advantageously be connected to the top side of a cooling surface either by a flat sintered joint, a flat soldered joint, or a flat adhesive joint. All design variants offer the advantage of a flat contact, which allows the waste heat generated during operation of the semiconductor components of the power module to be reliably dissipated and prevents excessive thermal stress on the power module proposed by the invention.

[0024] According to the solution proposed by the invention, the external contact areas of the power module are displaced vertically, i.e. in the Z direction, and provided in the multifunctional frame. This enables spatial decoupling of the semiconductor components from the current-carrying paths or the external contact areas, so that the total available area, i.e. the chip area, can be better utilized or considerably reduced, thereby resulting in significant cost savings. If the T+ bridge and the T- bridge are designed to be coplanar, one above the other, with a minimized distance in the Z direction, the magnetic fields generated by the current flow in these components are canceled out, so that parasitic effects of the current are largely eliminated and a low-inductance connection can be achieved.The solution proposed by the invention significantly simplifies the complexity of the power module and the entire assembly, including the multifunctional frame. By shifting the multifunctional frame in the Z direction, whether above or below the power module, spatial decoupling can be achieved, depending on the available space requirements. The use of press-in pins allows for a standardized interface for signal transmission, as well as for the line contacts. Furthermore, it is possible to arrange the semiconductor components in groups, for example, forming a group with six semiconductor components, or to arrange the number of semiconductor components with 12, 8, or 4, depending on requirements and variants, while maintaining appropriate spacing on the base surface of the power module.The solution proposed by the invention allows very tight tolerances to be maintained for subsequent connection and installation processes. Overall, the reliability of the power module with its associated multifunctional frame can be significantly improved due to the significantly improved heat dissipation, which ultimately benefits its service life. The inductive connection of the semiconductor components allows for very short switching times for the semiconductor components. Short description of the drawings

[0025] The invention is described in more detail below with reference to the drawings.

[0026] They show: Fig. 1 a plan view of a first circuit carrier of a power module comprising a carrier substrate and a possible arrangement of semiconductor switches, Fig. 2 a plan view of a power module with separate cooling and layout areas with laterally arranged areas for press-in pins, Fig. 3 an arrangement of a power module mounted on a cooling surface and a multifunctional frame arranged above it in the Z direction, Fig. 4 a perspective top view of the arrangement according to Fig. 3, Fig. 5 an enlarged view of a contacting of semiconductor components via L-parts and a connection of the power module to the cooling surface designed as a sintered connection, Fig. 6 a representation according to Fig. 5, where the connection from the power module to the cooling surface is shown via a flat soldering or adhesive connection, Fig. 7 an alternative contacting option for semiconductor components via material-locking connections with an interposition of a copper layer, Fig. 8 a perspective view of the press-in pins protruding beyond the multifunctional frame, representing a standardized interface, Fig. 9 an exploded view of the components of the multifunctional frame, Fig. 10 a longitudinal section through the representation according to Fig. 8 with L-parts contacting the contact surfaces of the semiconductor components, Fig. 11 the top view of a power module bridge, taken on a cooling surface of a cooling device and Fig. 12 a mounting variant of the assembly, comprising the power module bridge according to Fig. 11 and the cooling device, mounted on top of a battery system. Variants of the invention

[0027] In the following description of the embodiments of the invention, identical or similar elements are designated by the same reference numerals, whereby a repeated description of these elements is omitted in individual cases. The figures only schematically illustrate the subject matter of the invention.

[0028] Fig. 1 shows a plan view of a power module 12, in particular of its first circuit carrier 14.

[0029] The top view according to Fig. 1 shows that a carrier substrate 40 of the first circuit carrier 14 is provided with a number of conductor structures 18, 20A, 20B, 22. The first circuit carrier 14 extends in an X,Y plane 10, wherein the first circuit carrier 14 is provided with an electrical insulation layer 16. A first conductor structure 18, which has an external contact region 18.2, is located on this layer, separated from one another by channel-shaped interruptions. Furthermore, second conductor structures 20A, 20B are located opposite one another on the first circuit carrier 14, symmetrical to a central longitudinal axis 24 of the power module 12. Each of the two second conductor structures 20A, 20B comprises an external contact region 20A.2, 20B.2. Finally, a third conductor structure 22 is applied to the first circuit carrier 14 or to its electrical insulation layer 16, which has at least one external contact area 22.2.

[0030] The aforementioned conductor structures 18, 20A, 20B, 22 are electrically separated from one another and applied to the first circuit carrier 14 essentially symmetrically to the central longitudinal axis 24. Position 36 designates an active area, and a layout area surrounding this area for conducting current is designated by reference numeral 38. For example, AMB (Active Metal Brazing), which contains OFC (oxygen-free copper) / Si3N4 / OFC, can be selected as the carrier substrate 40 of the first circuit carrier 14.

[0031] According to the illustration Fig. 2 shows a plan view of the power module 12, wherein in this schematic representation semiconductor components 42 are arranged on active surfaces 36, which may be, for example, transistors, MOSFETs or other semiconductor components that can be used as semiconductor switches. Fig. 2 that a first group 64 of semiconductor components 42 is accommodated on the active surfaces 36. The individual semiconductor components 42 can be designed, for example, as MOSFETs and have control terminals 34 on their outer sides, via which a control (not shown in detail) of the individual semiconductor components 42 of the first group 64 of semiconductor components 42 can be carried out. Analogous to the first group 64, a second group 66 of semiconductor components 42 is arranged, which can also be MOSFETs, on the outer region of which control terminals 34 are each formed. The semiconductor components 42 of the second group 66 of semiconductor components 42 can be controlled from the outside via the control terminals 34, although this is not shown in the illustration according to Fig. 2 is not shown in detail.

[0032] Furthermore, the top view according to Fig. 2 shows that in the Fig. 2, areas are provided on the long sides of the first circuit carrier 14 in the form of a carrier substrate 40, in which press-in pins 76 - 94 are inserted into the plane of the drawing according to Fig. 2. In detail, these are first and second press-in pins 76, 78 as well as third and fourth press-in pins 80, 82 and, arranged opposite one another, fifth and sixth press-in pins 84, 86. In the area of ​​the opposite end face of the first circuit carrier 14, seventh and eighth press-in pins 88, 90 are provided as well as ninth and tenth press-in pins 92, 94. The spatial arrangement of the press-in pins 76, 78, 80, 82, 84, 86, 88, 90, 92, 94 is shown in the illustrations according to Fig. 3 and Fig. 4 for more details.

[0033] According to the side view Fig. 3 shows that a power module 12, shown here from the outside, is mounted with its underside 120 on a cooling surface 106. Viewed in the Z direction 54, a multifunctional frame 50 is located above the power module 12. On the top side of the Fig. In the side view of the multifunction frame 50 shown in Figure 3, the individual press-in pins 76, 78, 80, 82, 84, 86, 88, 90, 92, 94—here located in the same plane of the drawing—protrude vertically upwards. The press-in pins allow for robust and simple electrical contact between the components within the multifunction frame 50 and the power module 12 arranged underneath.

[0034] Fig. 4 shows a partial perspective view from the top side into the Fig. 3 shows an arrangement of multifunctional frame 50, power module 12 and cooling surface 106 arranged underneath, shown from the side.

[0035] Fig. 4 shows that the first group 64 of semiconductor components 42 and the second group 66 of semiconductor components 42 are arranged in a first plane 60 extending substantially at the bottom of the power module 12. The arrangement pattern according to Fig. 4 corresponds essentially to the plan view as shown in Fig. 2. From the illustration according to Fig. 4 shows that essentially flat contact surfaces 68, 70 extend in a second plane 62 extending above the first plane 60. The contact surfaces 68, 70 are preferably T+ bridges 134 or T- bridges 138, which are described in more detail below, as well as a phase bridge 136. While the first contact surface 68 has the third press-in pin 80 and, opposite it, the fourth press-in pin 82, the seventh press-in pin 88 is formed on the second contact surface 70, and the eighth press-in pin 90 is arranged laterally offset from it.

[0036] From the representation according to Fig. 4 further shows that the semiconductor components 42 of the first group 64 and the second group 66 arranged below the second level 62, ie in the first level 60, can be contacted via the press-in pins 84, 86, 92, 90. By means of the Fig. The arrangement or spatial decoupling of the levels 60, 62 shown in Figure 4 allows a compact design and a significant improvement in the cooling of the semiconductor components 42 producing waste heat during operation to be achieved.

[0037] Fig. 4 further shows that the substantially planar contact surfaces 68, 70 are each formed with a number of openings 72, which in the embodiment of the contact surfaces 68, 70 according to Fig. 4 have a rectangular shape 74. As an alternative to the rectangular shape 74, a different geometry, for example square or circular, is of course also conceivable with respect to the geometry of the openings 72. Below the openings 72 formed in the surface of the contact surfaces 68, 70, there is a corresponding semiconductor component 42. This means that the openings 72, which are located in the first plane 60, are aligned with the positions of the semiconductor components 42 in the second plane 62 below. As further shown in Fig. 4, for example, the semiconductor components 42 of the first group 64 are electrically contacted via L-parts 98. The L-part 98 partially overlaps the edge of the opening 72, extends essentially in the vertical direction to the second level 62 arranged below the first level 60 and there to the semiconductor component 42 positioned below the opening 72. The use of the L-parts 98 as current transmission elements enables a spatial separation in the Z-direction 54 as seen in connection with Fig. 3 indicated.

[0038] The same applies to the semiconductor components 42 of the second group 66 of semiconductor components 42, which are also accommodated in the first level 60 on the bottom of the power module 12.

[0039] The semiconductor components 42 of the second group 66 are also contacted by L-parts 98, which extend substantially vertically, starting from the second level 62 in the direction of the first level 60, ie in the direction of the bottom of the power module 12. In the Fig. 4, the contact surfaces 68, 70, which run in the second plane 62 within the multifunctional frame 50, over which they extend essentially in the vertical direction, ie in the opposite Z direction 54, are contacted with the semiconductor components 42 arranged in the first plane 60 at the bottom of the power module 12.

[0040] In the representations according to Fig. 5 and Fig. 6 shows enlarged views of the L-parts 98. In the background of the Fig. 5 shows here - enlarged - the second press-in pin 78, the third press-in pin 80 and the fifth press-in pin 84, which are behind the plane of the drawing, as shown in Fig. 5 is shown. Fig. 5 shows that the L-shaped parts 98 extend through the openings 72, which here are designed in a rectangular shape 74, on both sides of the web 96 in the material of the first contact surface 68. These extend through the openings 72 and contact with their bent short side a spacer 100, which in turn contacts a contact surface 102 on the top side of the semiconductor component 42. In the illustration according to Fig. 5, a bottom side 120 of the power module 12 is connected via a planar sintered connection 104 to an underlying, substantially planar cooling surface 106. With the sintered connection 104 interposed, the heat loss generated during operation of the semiconductor components 42 can be effectively dissipated to a heat sink via the cooling surface 106.

[0041] Fig. 6 essentially corresponds to the arrangement according to Fig. 5 with the multifunctional frame 50 arranged above the power module 12 and the webs 96, which are part of the first contact surface 68. Starting from these, the L-parts 98 run in the direction of the spacers 100 and touch the contact surface 102 on the top side of the semiconductor components 42. In contrast to the embodiment of the power module 12 with the multifunctional frame 50 arranged on top according to Fig. 5 is shown in accordance with Fig. 6, the underside 120 of the power module 12 is connected to the cooling surface 106 arranged underneath via a flat solder / adhesive connection 110. Otherwise, the illustrations correspond to the Fig. 5 and Fig. 6 essentially each other. By contacting the underside 120 with the cooling surface 106, whether via a sintered connection 104 according to Fig. 5 or via a solder / adhesive connection 110 according to Fig. 6, waste heat generated during operation of the semiconductor components 42 is transported to a heat sink and dissipated, so that no excessive temperatures occur during operation of the power module 12.

[0042] Fig. 7 shows an alternative contacting option for the semiconductor components 42. Openings 116 are accommodated in the multifunctional frame 50. The openings 116 are covered on the underside of the multifunctional frame 50 by a copper layer 114. A welded connection 118 is formed therein within a welding area 112, so that the chip arranged beneath the copper layer 114, possibly with the interposition of the spacer 100, i.e. the semiconductor component 42, is electrically contacted. The spacer 100 located beneath the copper layer 114 and the semiconductor component 42 can be enclosed by a molding compound 108 or embedded therein. The latter is connected to the underside 120 of the power module 12 via the sintered connection 104, analogously to the illustration according to Fig. 5, or via a solder / adhesive connection 110, analogous to the design variant according to Fig. 6, with a substantially flat cooling surface 106 for dissipating the waste heat generated during operation of the semiconductor components 42.

[0043] In a method according to the invention for producing the power module 12, a first conductor structure 18 with an external contact region 18.2, at least one second conductor structure 20A, 20B with at least one external contact region 20A.2, 20B.2, and a further third conductor structure 22 having an external contact region 22 are provided thereon. The multifunction frame 50 is assigned to the power module 12; groups 64, 66 of semiconductor components 42 are arranged in a first level 60, which are spatially separated from a second level 62 in the multifunction frame 50. Finally, current-carrying contact surfaces 68, 70 that contact the first and second groups 64, 66 of semiconductor components 42 are arranged in the second level 62.

[0044] Fig. Figure 8 shows a perspective top view of a multifunctional frame 50, which is arranged above the power module 12, viewed in the Z direction 54. From the top view, it can be seen that a number of press-in pins 76, 78, 80, 84, 88, 92, 94 for electrical contacting and signal transmission protrude above the multifunctional frame 50 made of plastic material 132 on its upper side. On the short end faces of the multifunctional frame 50, the external contact areas 18.2, 20A, 22B.2 and 22.2, which are displaced in its plane, protrude for electrical contacting. Fig. In the perspective top view of the power module 12 shown in Figure 8, the multifunctional frame 50 is arranged above the power module 12 in the Z direction 54. However, the multifunctional frame 50 could also be arranged below the power module 12 or next to it in the Z direction 54, depending on the installation space requirements.

[0045] Fig. Figure 9 shows an exploded view of the components housed in the multifunctional frame 50. These components are, in particular, relatively flat contact surfaces in the form of a T+ bridge 134, a phase bridge 136, and a T- bridge 138. The T+ bridge 134 and the T- bridge 138, arranged coplanarly one above the other, are separated from one another by an insulating layer 140 made of paper or cardboard. By maintaining a small distance between the T+ bridge 134 and the T- bridge 138, the magnetic fields generated by the current flow can be eliminated, or rather, they cancel each other out. This minimizes parasitic effects of the flowing current and enables the connection to be implemented with low inductance.A low-inductive connection leads to particularly short switching times for electrical semiconductor components, which is extremely advantageous for inverters or power electronics for electric drives of electrically powered vehicles.

[0046] As shown in the exploded view Fig. As can be seen further in Figure 9, the external contact areas 18.2, 20.2, 20B2 are also shown.

[0047] The phase bridge 136 can be contacted via the seventh press-in pin 88 and the eighth press-in pin 90. The other press-in pins, for example 92 and 94, extend into the plane arranged below the phase bridge 136, i.e., toward the bottom 144 of the power module 12.

[0048] In an analogous manner, further press-in pins 76, 78, 80, 84 are assigned to the current-carrying T+ bridge 134 or the T- bridge 138, which serve for electrical contact and / or signal transmission.

[0049] According to the illustration Fig. 10 is a section through the arrangement according to Fig. 8. From the illustration according to Fig. 10 shows that, for example, starting from the phase bridge 136, L-shaped parts 98 are punched out vertically downwards, protrude into the second plane 62, formed by the bottom surface 144 of the power module 12, and contact the semiconductor components 42 arranged there individually or in groups on their upper sides. The contact can be designed, in particular, as a material-to-material connection, preferably as a welded connection. The same applies to the T-shaped bridge 138, which also represents a current-carrying, second contact surface 70. From this, L-shaped parts 98 are bent downwards vertically within openings 72 of the multifunctional frame 50 and, if necessary with the interposition of one or more spacers 100, contact the contact surfaces 102 of the semiconductor components 42.These are arranged individually or in groups 62, 64 on the base surface 144 of the power module 12 and can be cooled by a cooling device 158 or a cooling surface 106, which will be described below.

[0050] From the representation according to Fig. 10 further shows the coplanar arrangement of the T+ bridge 134, which represents the first current-carrying contact surface 68, and the T- bridge 138, which represents the second current-carrying contact surface 70. The smaller the distance between these two components can be kept, the more favorable the cancellation of the magnetic fields can be achieved in the case of current flow, so that a low-inductive connection of the semiconductor components 42, which are arranged in the second level 62, i.e. below the multifunctional frame 50 representing the first level 60, is achieved. For the sake of completeness, press-in pins 76, 78, 80, 84, 88, 92 are analogous to Fig. 8. The underside 120 of the power module 12 is cooled by a cooling device 158 having a cooling surface 106.

[0051] Fig. 11 shows a power module bridge 156 comprising a number of power modules 12 on a cooling surface 106, each with a multifunction frame 50 made of plastic material 132 arranged and populated above each of them. The individual power modules 12, with their associated multifunction frames 50, are arranged side by side on the cooling surface 106, maintaining a slight spacing. The external contact areas 18.2, 22A.2, 22.2, and 22B2 protrude beyond the short end faces of the power modules 12 for electrical contact.

[0052] Fig. 12 that the cooling surface 106 is arranged on the top side of a cooling device 158, which is only schematically arranged here. This can be designed, for example, via suitable connections and lines 166, such that a cooling medium continuously flows through it, so that the underside of the power modules 12 arranged on the cooling surface 106 can be continuously cooled. This allows the waste heat continuously generated during operation of the semiconductor components 42, which are arranged on the base 144 of the power module 12, to be effectively dissipated. From the illustration according to Fig. 12 shows that in this embodiment, the arrangement of semiconductor component 42, multifunctional frame 50, and cooling device 158 is arranged as a connection 164 on the top side of the battery system 162. For the sake of simplicity, only a few battery cells 160 are shown.

[0053] The invention is not limited to the embodiments described here and the aspects highlighted therein. Rather, numerous modifications are possible within the scope of the claims, which are within the scope of one skilled in the art. QUOTES CONTAINED IN THE DESCRIPTION

[0000] This list of documents submitted by the applicant was generated automatically and is included solely for the convenience of the reader. This list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions. Cited patent literature

[0000] DE 11 2017 004 390 T5

[0003] DE 10 2014 219 998 B4

[0004] EP 2 418 925 B1

[0005]

Claims

[1] Power module (12) with a first circuit carrier (14) containing a carrier substrate (40), and a first conductor structure (18) with an external contact area (18.2), at least one second conductor structure (20A, 20B) with at least one external contact area (20A.2, 20B.2) and a further, third conductor structure (22) comprising an external contact area (22.2), with a first group (64) of semiconductor components (42) and a second group (66) of semiconductor components (42), characterized by in that a multifunctional frame (50) is assigned to the power module (12), wherein the groups (64, 66) of semiconductor components (42) are arranged in a first plane (60) which is spatially separated from a second plane (62) in the multifunctional frame (50), in which contact surfaces (68, 70) contacting the groups (64, 66) of semiconductor components (42) are accommodated. [2] Power module (12) according to claim 1, characterized bythat the multifunctional frame (50) is arranged above or below the power module (12) as seen in the Z direction (54). [3] Power module (12) according to claims 1 to 2, characterized by that in the multifunctional frame (50) current-carrying paths are designed as a T+ bridge (134), a T- bridge (138) and a phase bridge (136) lying one above the other or next to each other with low inductance [4] Power module (12) according to claims 1 to 3, characterized by that the contact surfaces (68, 70) in the second plane (62) can be contacted by means of press-in pins (80, 82; 88, 96). [5] Power module (12) according to claims 1 to 4, characterized by that the groups (64, 66) of semiconductor components (42) arranged in the first plane (60) can be contacted via press-in pins (84, 86; 92, 94). [6] Power module (12) according to claims 1 to 5, characterized bythat the power module (12) is connected with its underside (120) to a cooling surface (106) either via a sintered connection (104) or via a solder or adhesive connection (110). [7] Power module (12) according to claims 1 to 6, characterized by that the contact surfaces (68, 70) arranged in the second plane (62) of the multifunctional frame (50) have openings (72) which are located above the semiconductor components (42) of the groups (64, 66) of semiconductor components (42) arranged in the first plane (62). [8] Power module (12) according to claim 7, characterized by that the contact surfaces (68, 70) of the second level (62) are contacted with the semiconductor components (42) arranged in the first level (60) via L-parts (98). [9] Power module (12) according to claim 8, characterized by that a spacer (100) is arranged between the L-parts (98) and a contact surface (102) of the semiconductor element (42). [10] Power module (12) according to claim 7, characterized by that a material connection (118) is made between the multifunctional frame (50) in the second level (62) and the semiconductor components (42) of the first group (64) of semiconductor components (42). [11] Power module (12) according to claim 10, characterized by that the material connection (118) within an opening (116) is designed as a welded connection (118) on a copper layer (114). [12] Method for producing a power module (12) which is designed according to one of claims 1 to 11, in which - a first conductor structure (18) with a first contact area (18.2), - at least one second conductor structure (20A, 20B) with at least one external contact area (20A.2, 20B.2) and - a further, third conductor structure (22) having an external contact area (22.2) is provided, wherein - a multifunctional frame (50) is assigned to the power module (12), - groups (64, 66) of semiconductor components (42) are arranged in a first plane (60), which are spatially separated from a second plane (62) in the multifunctional frame (50), - wherein contact surfaces (68, 70) contacting the groups (64, 66) of semiconductor components (42) are arranged in the second plane (62).

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