Using a processing device, method and processing system

Abstract

Various embodiments relate to the use of a processing device for modifying an adhesion of a surface (104) to a layer (308) by means of a plasma (106) to which the surface (104) is exposed before the formation of the layer (308), wherein the processing device is configured to move a spatial distribution of the plasma (106) relative to the surface (104) along a plurality of axes.

Description

Various embodiments relate to the use of a processing device, a method and a processing systemGenerally, a workpiece, for example a glass plate, a metal plate and / or a polymer plate, may be treated (processed), e.g. coated, such that the chemical and / or physical properties of the workpiece may be altered. For coating the workpiece, various coating processes may be performed, of which chemical vapor deposition (CVD) and physical vapor deposition (PVD) are established examples. For example, a vacuum coating plant may be used to deposit one or more layers on one or more substrates by means of chemical and / or physical vapor deposition.If the geometry of the layer is to have particular properties, for example if the workpiece is to be only partially covered with the layer, a structuring process is generally used in which the layer is structured (also referred to as structuring). Conventionally, the structuring of a layer formed in a vacuum takes place by means of the so-called detachment process (also referred to as lift-off process). In this case, masking of the workpiece is carried out by forming a so-called sacrificial layer (also referred to as masking layer) between those regions of the workpiece and the layer which are intended to remain free of the layer. Removal of the sacrificial layer then partially peels off the layer, exposing various areas of the workpiece.For small workpieces, the sacrificial layer is often formed by means of photolithographic structuring, which is very complicated for larger substrates, however. If, for example, larger areas are to be coated (also referred to as large-area coating), for example for architectural glass or for components of the automobile industry, the sacrificial layer required for this purpose is therefore formed by means of screen printing, inter alia, which saves costs in comparison with the photolithographic structuring.According to various embodiments, it has been recognized that the established processes for forming the sacrificial layer are common that they are precise only when the surface of the workpiece to be coated is planar, so that the uneven the surface is, the accuracy thereof decreases. For example, a curved plate as a workpiece (e.g. a windshield) can only be masked with difficulty by means of a sacrificial layer while maintaining the usual process times. An increase in the accuracy requires individual adaptation of the tools used for this purpose to the geometry of the workpiece, which increases the costs and reduces the flexibility.Various embodiments provided herein address this dilemma. Inter alia, a processing device (e.g. comprising a plasma source) is used to implement a structuring process, and further a method and a device corresponding thereto are provided, which among other things increase the flexibility with respect to the geometry of the workpiece (also referred to as substrate) and thus reduce costs.Illustratively, according to various embodiments, it has been recognized that the adhesion as a property of an uneven surface can be efficiently modified by means of a processing device which is moved relative to the surface, e.g. according to the contour (e.g. topography) of the surface. The extent of the range of action of the processing device is, for example, smaller than the surface, so that a plurality of surface sections of the surface are processed sequentially by means of the processing device (also referred to as scanning).A preferred implementation of a processing apparatus referred to herein is configured to provide a plasma (then e.g. comprising a plasma source as an exemplary processing source) to which the surface is exposed. For example, the plasma may be a so-called atmospheric plasma, so that it may be formed under atmospheric pressure, e.g. exposed to the earth's atmosphere, which further reduces the costs. Implementation by means of a plasma source can be particularly accurate in contour, promote low material consumption, and can therefore be particularly suitable for mass production.Among other things, various embodiments address the need for large area patterning of free form substrates. In particular, consideration of the technical requirements of a production line for automotive glasses is favored. From this requirement, the interfaces to upstream and downstream processes place a particular restriction with regard to the process realization.Various examples relating to those described above and illustrated in the figures will be described below.Example 1 is using a process (e.g. a plasma) configured to modify (also referred to as modifying the adherence of a surface (also referred to as an ability of the surface to impart adhesion) for processing the surface (also referred to as an adhesion modifying process), wherein preferably a spatial distribution of the process relative to the surface is shifted along multiple directions (e.g. meandering), e.g. axes.Example 2 is using (e.g. according to example 1) a (e.g. movably mounted) process source (e.g. a plasma source) configured to modify an adhesion of a surface (e.g. by means of a plasma, then also referred to as a plasma process) for processing the surface on which at least one (e.g. at least one first and / or at least one second) layer is formed, wherein the processing of the surface preferably comprises moving the process source (e.g. plasma source) according to a desired movement path which is formed on or based on an uneven contour (e.g. topography) of the surface, wherein the desired movement path is configured, moving (e.g. displacing) the process source relative to the surface along a plurality of directions (e.g. meandering).Example 3 is using (for example according to example 1 or 2) a processing device for modifying an adhesion (e.g. its spatial distribution) of a (e.g. uneven) surface to a layer by means of a process (e.g. by means of a plasma) to which the surface is exposed before forming the layer, wherein the processing device is configured to move (e.g. shift) a spatial distribution of the process (e.g. plasma) relative to the surface along a plurality of directions (e.g. meandering), e.g. axes.Example 4 is a use of a result of the use according to one of Examples 1 to 3 for providing a translucent (e.g. transparent) wall section, e.g. a car window and / or a window pane.Example 5 is a use (for example configured according to one of Examples 1 to 4) of a workpiece which has a surface which is partially adhesion-reducingly processed by means of a plasma and is subsequently coated, for providing a translucent (for example transparent) wall section, for example a motor vehicle window and / or a window pane.Example 6 is using (for example configured according to one of Examples 1 to 5) a shadow mask (for example mounted movably relative to a surface) for shading a first portion of a surface opposite a coating process by means of which a coating material is emitted towards the surface (to which, for example, the shadow mask is exposed) such that a second portion of the surface (for example adjoining the first portion) in which adhesion promoter between the surface and the coating material decreases in the direction towards the first portion is exposed to the coating material.Example 7 is configured according to one of Examples 1 to 6, wherein the processing of the surface comprises processing a portion of the surface in an adhesion-modifying (e.g. adhesion-reducing or adhesion-promoting manner) by means of a plasma in order to modify a spatial distribution of an adhesion promoter between the first layer and the surface.Example 8 is the use according to any of Examples 1 to 7, wherein forming the layer comprises performing a structuring of the layer based on a result of modifying the adhesion; and preferably by means of a (e.g. free-standing and / or plate-shaped) shadow mask which at least partially (partially or completely) covers a portion of the surface whose adhesion has been modified (e.g. has been exposed to the plasma), and / or wherein the shadow mask has a distance from the surface.Example 9 is the use according to any one of Examples 1 to 8, wherein modifying the adhesion comprises reducing the adhesion (also referred to as adhesion-reducing processing), e.g. by means of the plasma.Example 10 is the use according to any one of Examples 1 to 9, wherein the modifying of the adhesion comprises forming a layer (e.g. the second layer) comprising a polymer by means of the plasma, wherein the polymer is preferably exposed to (e.g. supplied to or formed by) the plasma.Example 11 is the use according to any of Examples 1 to 10, wherein the second layer comprises a polymer.Example 12 is the use according to any of Examples 1 to 11, wherein the surface and / or the plasma is exposed to an atmospheric pressure.Example 13 is the use according to any one of Examples 1 to 12, wherein the surface and / or the plasma is exposed to molecular oxygen and / or carbon dioxide.Example 14 is the use according to one of Examples 1 to 13, wherein the plasma is formed by means of a plasma source, for example, which is moved relative to the surface during the processing of the surface, wherein the plasma source is preferably moved according to a setpoint movement path which is integrally formed with a (e.g. uneven) contour (e.g. topography) of the surface or is based thereon, and / or which implements a movement of the plasma source along a plurality of directions (e.g. meandering), e.g. axes.Example 15 is the use according to any of Examples 1 to 14, wherein a spatial distribution of the plasma is varied over time (e.g. by means of the moving) such that the surface is processed sequentially by means of the plasma.Example 16 is a method comprising: determining a target spatial distribution of a layer on a surface, driving an actuator based on the target distribution, wherein the actuator is configured to influence a first process for modifying an adhesion of the surface to the layer (e.g. by means of a plasma) to which the surface is exposed before forming the layer such that a spatial distribution of the plasma relative to the surface is displaced along a plurality of directions (e.g. meandering), e.g. axes.Example 17 is a method (preferably according to example 16), comprising: controlling the first actuator configured to influence the first process for modifying adhesion of a surface to a layer (e.g. by means of a plasma) to which the surface is exposed before forming the layer, such that a spatial distribution of the plasma relative to the surface is displaced along a plurality of directions (e.g. meandering), e.g. axes; and / or controlling a second actuator configured to influence a second process by means of which the layer is formed on the surface.Example 18 is the method of example 16 or 17, wherein the second process comprises patterning (e.g., by removing portions of the layer from the surface) the layer based on a result of modifying the adhesion; and / or wherein the first process comprises exposing (e.g., supplying or forming) a polymer to the plasma.Example 19 is a computer program configured to perform the method according to one of Examples 16 to 18 and / or to perform a method implementing the use according to one of Examples 1 to 15.Example 20 is a computer readable medium storing instructions configured, when executed by a processor, to cause the processor to perform the method according to any one of Examples 16 to 18 and / or to perform a method implementing the use according to any one of Examples 1 to 15.Example 21 is a control device comprising one or more than one processor configured to perform the method according to any one of examples 16 to 18 and / or to perform a method implementing the use according to any one of examples 1 to 15.Example 22 is a processing system, comprising: a substrate holding device for holding a substrate; a processing source (e.g. plasma source) for providing a plasma, which is configured to modify adhesion of a surface of the substrate; a material source for providing a material by means of which the surface is coated; an actuator, which is configured to influence a relative movement (also referred to as relative movement) between the substrate holding device and processing source (e.g. plasma source), preferably along a plurality of directions (e.g. meandering), e.g. axes; Preferably, a control device (e.g. the control device according to example 21), which is configured to actuate the actuator according to a setpoint movement path which is integrally formed with an uneven contour (e.g. topography) of the surface and / or is based thereon (e.g. on a model of the surface); wherein the processing of the surface is carried out by means of the plasma, for example, and / or wherein the process is implemented by means of the material source, for example.Example 23 is configured according to any one of Examples 1 to 22, wherein the surface is uneven, e.g. curved.Example 24 is configured according to any of Examples 1 to 23, wherein an uneven (e.g. curved) portion of the surface is exposed to the plasma.Example 25 is set up according to one of Examples 1 to 24, wherein the processing source (e.g. plasma source) is movably mounted and / or mounted by means of a mounting device which provides the processing device (e.g. plasma source) with one or more than one degree of freedom (e.g. a plurality of degrees of freedom).Example 26 is configured according to one of Examples 1 to 25, wherein the processing source (e.g. plasma source) is of the point source or linear source type.Example 27 is set up according to one of Examples 1 to 26, wherein the surface (e.g. its contour of the surface, e.g. the topography of the surface) is detected, preferably by means of a measuring element (e.g. having one or more than one sensor).Example 28 is configured according to any of Examples 1 to 27, wherein the adhesion is related to a material of the layer (then also referred to as layer material) with which the surface is coated.Example 29 is configured according to one of Examples 1 to 28, wherein modifying the adhesion by means of the plasma source and / or the plasma comprises moving the latter in meandering fashion over the surface (also referred to as scanning).Example 30 is configured according to one of Examples 1 to 29, wherein the surface is a surface of a (e.g. uneven and / or plate-shaped) workpiece.Example 31 is set up according to one of Examples 1 to 30, wherein only a (e.g. contiguous) section of the surface is processed by means of the plasma source (or at least the plasma).Example 32 is configured according to any one of Examples 1 to 31, wherein the moving comprises a translation.Example 33 is configured according to one of Examples 1 to 32, wherein the moving (e.g. plasma source and / or plasma) and / or the desired movement path is based on a model of the surface.Example 34 is configured according to one of Examples 1 to 33, wherein the desired movement path is implemented by means of a model of the surface or is at least based thereon.Example 35 is set up according to one of Examples 1 to 34, wherein the desired movement path is implemented by means of a model of the layer or is at least based thereon, e.g. the layer in the structured state.Example 36 is configured according to any one of Examples 1 to 35, wherein the surface is uneven or at least has an uneven contour which is exposed to the plasma.Example 37 is configured according to one of Examples 1 to 36, wherein modifying the adhesion comprises modifying a spatial distribution of the adhesion (e.g. by means of the plasma) and / or reducing the adhesion at least in sections (e.g. by means of the plasma).Example 38 is configured according to any of Examples 1 to 37, wherein the surface is a surface of a (e.g. rigid) workpiece.Example 39 is configured according to one of Examples 1 to 38, wherein the spatial distribution of the plasma is provided by means of a plasma source (e.g. point source or line source) of the processing device, and / or wherein the plasma source and the surface are mounted movably relative to one another along the plurality of directions, e.g. axes.Example 40 is configured according to any one of examples 1 to 39, wherein forming the layer comprises structuring the layer based on a result of modifying the adhesion; and preferably takes place by means of a shadow mask (e.g. supported movably relative to the surface) which at least partially covers a portion of the surface.Example 41 is configured according to one of Examples 1 to 40, wherein the processing device is configured to move (e.g. shift) the spatial distribution of the plasma and / or the plasma source relative to the surface along a plurality of directions (e.g. meandering), e.g. axes, according to a desired movement path which is formed on a contour of the surface or is based thereon.Example 42 is configured according to any one of Examples 1 to 41, wherein a plurality of portions of the surface are sequentially exposed to the plasma.Example 43 is configured according to one of Examples 1 to 42, wherein the modification of the adhesion is effected according to a spatial desired distribution of the layer on the surface and / or is based on a model of the layer, which preferably implements the desired distribution of the layer.Example 44 is set up according to one of Examples 1 to 43, wherein the desired movement path is implemented by movement along a plurality of directions (e.g. meandering), e.g. axes, and / or is implemented by means of a movement model.Example 45 is configured according to any one of Examples 1 to 44, wherein the plurality of directions, e.g. axes, have a first direction, e.g. axis, which is directed towards the surface; wherein the plurality of directions, e.g. axes, have one or more than a second direction, e.g. axis, which is directed past the surface and / or transverse to the first direction, e.g. axis.Example 46 is configured according to one of Examples 1 to 45, wherein the plurality of directions, e.g. axes, have at least two directions, e.g. axes, which are transverse to one another, and / or have three directions, e.g. axes, which span an orthogonal system, for example.Example 47 is configured according to one of Examples 1 to 46, wherein the formation of the layer comprises forming a first state of the layer (also referred to as initial state or initial layer) (also referred to as layer structures), preferably at least by means of depositing coating material on the surface, and wherein the formation of the layer preferably comprises transferring the first state into a second state of the layer (also referred to as structured state or as structured layer) by means of structuring the layer and / or by means of removing portions of the layer from the surface, further preferably at least those portions of the surface whose adhesion is modified.Example 48 is configured according to one of Examples 1 to 47, wherein the layer is formed by means of CVD and / or PVD.Example 49 is set up according to one of Examples 1 to 48, wherein the plasma, e.g. a spatial distribution of the plasma, is provided by means of a plasma opening, by means of which the plasma is preferably supplied with gas and / or from which the plasma preferably exits, wherein, for example, the movement (e.g. the spatial distribution of the) plasma is excited by means of a movement of the plasma opening, e.g. in the plurality of directions, e.g. axes.Example 50 is set up according to one of Examples 1 to 49, wherein the layer is formed by means of a coating process.Example 51 is configured according to any one of Examples 1 to 50 and further as claimed in any one of the appended claims 1 to 14.They show FIG. 1 illustrates the use of a plasma source in a method according to various embodiments; FIG. 2 shows a plasma source according to various embodiments in a sectional perspective view; FIGS. 3A to C show the method in different schematic views according to various embodiments; and FIG. 4 shows the method according to various embodiments in a schematic process diagram.In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. is used with reference to the orientation of the figure(s) described. Since components of embodiments may be positioned in a number of different orientations, the direction terminology is for the purpose of illustration and is in no way limiting. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various exemplary embodiments described herein may be combined with each other, unless specifically stated otherwise. The following detailed description is therefore not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.In the context of this description, the terms "connected", "connected" and "coupled" are used to describe both a direct and an indirect connection (e.g. ohmic and / or electrically conductive, e.g. an electrically conductive connection), a direct or indirect connection and a direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.According to various embodiments, the term "coupled" or "coupling" may be understood in the sense of a (e.g. mechanical, hydrostatic, thermal and / or electrical), e.g. direct or indirect, connection and / or interaction. A plurality of elements can be coupled to one another, for example, along an interaction chain along which the interaction can be exchanged, for example a fluid (then also referred to as a fluid-conductingly coupled). For example, two elements coupled to one another can exchange an interaction with one another, e.g. a mechanical, hydrostatic, thermal and / or electrical interaction. Coupling a plurality of vacuum components (e.g., valves, pumps, chambers, etc.) to one another may include being fluidly coupled to one another. According to various embodiments, "coupled" can be understood in the sense of a mechanical (e.g. physical or physical) coupling, e.g. by means of a direct physical contact. A clutch may be configured to transmit a mechanical interaction (e.g., force, torque, etc.).The actual state of an entity (e.g. a device, a system or an operation or process) can be understood to mean the actually present or sensorially detectable state of the entity. The desired state of the entity can be understood to mean the desired state, i.e. a specification. Controlling can be understood to mean an intended influencing of the current state (also referred to as actual state) of the entity. In this case, the current state can be changed in accordance with the specification (also referred to as the desired state), for example by changing one or more than one operating parameter (then also referred to as the manipulated variable) of the entity, for example by means of an actuator. Regulation can be understood as control, wherein a change of state due to disturbances is additionally counteracted. For this purpose, the actual state is compared with the desired state and the entity is influenced in such a way, for example by means of an actuator, that the deviation of the actual state from the desired state is minimized. In contrast to the pure forward-directed sequence control, the control therefore implements a continuous influence of the output variable on the input variable which is effected by the so-called control loop (also referred to as feedback). In other words, it can be understood here that, alternatively or in addition to the control (or the actuation), a regulation can be used or, alternatively or in addition to the control, a regulation can take place.The state of a controllable entity, e.g. a controllable device (e.g. a structuring device) and / or a controllable process (e.g. the structuring), can be specified as a point (also referred to as operating point or operating point) in a space (also referred to as state space) which is spanned by the variable parameters of the entity (also referred to as operating parameters). The state of the entity is thus a function of the respective value of one or more than one operating parameter, which thus represents the state of the entity. The actual state can be determined based on a measurement (e.g. by means of a measuring element) of one or more than one operating parameters (then also referred to as controlled variable).With regard to the processing, reference is made here in particular to an adhesion-modifying process (illustratively configured to modify adhesion), a layer-forming process (also referred to as coating process) and a layer-forming process (also referred to as structuring process or briefly referred to as structuring), various aspects of which are explained below.The term "adhesion" can be understood as a sum of all (e.g. physical and / or molecular) interactions between two contacted condensed materials (also referred to as condensates, examples of which include: solids and liquids) which bring about a mechanical cohesion of the two condensates, including in particular interactions in the interface which forms between the two contacted condensates. A contribution to the adhesion comprises, for example, the physical state (also referred to as the interface state) of the interface between the two condensates in contact.In the context, "adhesion" is understood to mean the property of a component (then also referred to as adhesion promoter) of the condensate, e.g. a surface, a layer, etc., to mediate adhesion (also referred to as adhesion promoter) or at least to provide the interface in which the interactions take place. If the adhesion promoter is the surface of one of the two condensates, the boundary surface is formed there in which the interactions underlying the adhesion take place. Similarly, adhesion of a layer to each of the two condensates may be considered independently when the layer is disposed between the two condensates so that the surfaces of the layer each provide adhesion. The adhesion may be related to a material as a condensate with which the adhesion promoter is in contact.The adhesion may be modified (e.g. altered) (also referred to as adhesion modifying processing), e.g. reduced (also referred to as adhesion reducing processing or as adhesion reducing type processing) or increased (also referred to as adhesion promoting processing or as adhesion promoting type processing), according to various embodiments. The adhesion-modifying processing can be carried out, for example, by means of a plasma to which the adhesion promoter (e.g. the surface) is exposed. The plasma can be configured to modify the surface by adhesion (i.e. at least to modify the adhesion), for example by changing the chemical and / or physical properties of the surface, e.g. its nature. Examples thereof include: a chemical reaction (e.g. oxidation) in which the surface of the or as adhesion promoter is involved; a change in the polarization of the surface of the or as adhesion promoter; a diffusion through a surface of the or as adhesion promoter; a change in the surface energy of the surface of the or as adhesion promoter; enrichment of the surface of the or as adhesion promoter with atoms from the plasma; an electrostatic change in the surface of the or as adhesion promoter, a sealing and / or change in the roughness of the surface of the or as adhesion promoter; breaking up chemical bonds on the surface of the or as adhesion promoter; introduction of charge carriers into the surface of the or as adhesion promoter, etc.A measure for this (e.g. for the adhesion or at least the adhesion) can be expressed, for example, as a threshold value (then also referred to as adhesion force) of a force (e.g. standardized to the size of the boundary surface) which is provided between the two condensates, when the mechanical cohesion of the condensates with one another is exceeded, and as a result the two condensates move relative to one another, e.g. the contact between these condensates is canceled, and / or the boundary surface breaks.The specific parameters of the plasma that alter (e.g., increase and / or decrease) the adhesion of the surface according to a specification, and / or the change in the adhesion itself, may be determined experimentally, for example. For this purpose, the surface, for example before or after the adhesion-modifying processing, for example a result of the adhesion-modifying processing (identified herein by the term "adhesion-modified"), can be coated with a material, for example with the layer material, and the adhesion force can be determined. The adhesive force can be determined, for example, by mechanically and / or chemically machining the material coated on the (e.g. adhesion-modified) surface.Examples of the adhesion-modified result include: the adhesion-modified surface, one or more than one (e.g. continuous and / or strip-shaped) adhesion-modified portion of the surface.In this regard, reference is made herein by way of example to an adhesion-reducing processing (also referred to as adhesion-reducing type processing), which is favorable, for example, when portions of the later-formed layer which are formed on the adhesion-modified result are to be removed from the surface in order to structure the layer. The description for this can analogously apply to adhesion-promoting processing (also referred to as adhesion-promoting type processing), which can be carried out, for example, if portions of the later-formed layer are intended to be removed outside the result of the processing, while other portions of the layer are intended to remain on the result of the processing.With regard to the layer-forming process (also referred to as coating process), reference is made here by way of example to so-called sputtering. The term "sputtering" refers to sputtering a material (also referred to as a coating material or target material) by means of a plasma. The atomized constituents of the coating material (e.g. individual atoms and / or ions) are separated from one another and can be deposited elsewhere, for example, to form a layer. The sputtering can be carried out by means of a so-called sputtering device, which can have one or more than one magnet system (then also referred to as magnetron). The coating material can be provided by means of a so-called sputtering target (also referred to as target for short), which can be tubular (then also referred to as tubular target) or plate-shaped (then also referred to as plate target or planar target), for example. In order to generate the plasma, a voltage (also referred to as sputtering voltage) can be applied to the sputtering target (also referred to as target for short), so that the sputtering target is operated as a cathode. Even if the sputtering voltage has an AC voltage, the terminology of the cathode is often maintained.For sputtering, the sputtering target can be arranged in a vacuum processing chamber (also referred to simply as vacuum chamber), so that the sputtering can take place in a vacuum. To this end, the ambient conditions (process parameters) within the vacuum processing chamber (e.g., process pressure, temperature, gas composition, etc.) may be adjusted or controlled during sputtering. For example, a working gas can be provided within the vacuum processing chamber, which working gas identifies the plasma-forming gas or the plasma-forming gas mixture. The vacuum processing chamber can be or can be configured, for example, to be airtight, dust-proof and / or vacuum-proof, so that a gas atmosphere having a predefined composition (also referred to as working atmosphere) or a predefined pressure (also referred to as working pressure or process pressure) can be provided within the vacuum processing chamber (e.g. according to a setpoint value). The vacuum chamber may be configured such that a vacuum (i.e. a pressure of less than 0.3 bar) and / or a pressure in a range of about 1 mbar to about 10 -3 mbar (in other words fine vacuum) or less may be provided therein, e.g. a pressure in a range of about 10 -3 mbar to about 10 -7 mbar (in other words high vacuum) or less may be provided, e.g. a pressure of less than high vacuum, e.g. less than about 10 -7 mbar (in other words ultra high vacuum) may be provided therein. The lowest pressure attainable in the vacuum chamber is also referred to as residual vacuum.According to various embodiments, reference is made to the sputtering process as an exemplary physical vapor deposition (PVD) type coating process, which is to be distinguished from chemical vapor deposition (CVD). In contrast to CVD, in PVD a solid material is first transferred into the gas phase (also referred to as gaseous phase or vapor) and a layer is formed by means of this gas phase. The gas phase of the target material can optionally be chemically reacted with a reactive gas in the PVD to form a chemical compound which is incorporated into the layer or forms the latter. During the chemical reaction of PVD, two or more materials are thus combined to form the chemical compound. In chemical vapor deposition, a gaseous starting compound (also referred to as precursor or reactant) is split into at least two reaction products, of which at least one reaction product is incorporated into the layer and optionally a reaction product is removed from the coating process as an excess (e.g. by means of a pump). Optionally, the CVD can be carried out by means of a plasma in which the cleavage of the precursor takes place.A plasma can be formed by means of a so-called working gas (also referred to as plasma-forming gas). According to various embodiments, the working gas may comprise a gaseous material which is inert, in other words which only participates in few or no chemical reactions at all. A working gas can be defined by the target material used, for example, and can be or will be adapted to it. For example, a working gas can comprise a gas or a gas mixture which does not react with the target material to form a solid or is even inert towards the latter. The working gas can comprise, for example, a noble gas (e.g. helium, neon, argon, krypton, xenon, radon) or a plurality of noble gases. The plasma can be formed from the working gas, which for example substantially causes the sputtering of the target material. If a reactive gas is used, it can have a higher chemical reactivity than the working gas, e.g. with respect to the target material. In other words, the sputtered target material may react more quickly (i.e., form more reaction product per time) with the reactive gas (if present) than together with the working gas (e.g., chemically react with the working gas if at all). The reactive gas and the working gas can be supplied together or separately as process gas (for example as a gas mixture), for example by means of the gas supply device.It can be understood that what is described herein for sputtering can analogously apply to any other coating process (also referred to as a layer-forming process), for example of the physical vapor deposition type. In general, physical vapor deposition (e.g. sputtering) comprises transferring the chemical composition of the target or of the coating material into the layer to be formed.Analogously to the plasma, by means of which (e.g. the adhesion-modifying or layer-forming) processing of the surface takes place, reference is likewise made here to the processing device corresponding thereto (e.g. its plasma source), which is configured to provide the plasma. In this regard, it can be understood that the description for the plasma with regard to the processing can analogously apply to the processing device (e.g. its plasma source) by means of which the processing takes place.In the context of a layer (e.g. forming the layer), the term "structuring" ("patterning") denotes one or more than one measure by means of which the geometry (e.g. a contour) of the layer is influenced (e.g. according to a specification) and the result of which is also referred to as a structured layer (also referred to herein as a layer in the structured state). The structuring can take place at least partially (i.e. partially or completely) during the coating process and / or at least partially after the coating process. The structuring during the coating process can be effected, for example, by means of a masking (e.g. a shadow mask) which limits the spatial spread of the material of the coating process by means of which the layer is formed. Alternatively or additionally, the structuring can take place after the coating process, for example by means of processing the layer (at least a portion thereof), for example by the layer being partially removed. The structuring can be effected, for example, according to the specification. The specification can have, for example, the desired geometry of the layer; a desired section of a surface which is covered by the layer; a desired section of a surface which is free of the layer, or similar details about the geometry and / or location of the structured layer.Reference is further made herein to "modelling" in the context of an entity, e.g. a surface, an operation and / or a body, the result of which comprises a "model" of the entity (then also referred to as original of the model or briefly as original). The model can be understood as a data-based (e.g. digital and / or virtual) representation of the original, e.g. of a physical object (e.g. a contour) and / or of an operation (e.g. a control operation or a process flow). To form the model (the so-called model formation, i.e. the mapping of the original onto the model), the original can be abstractd, parameterized and / or simplified. The model may include, for example, physical information (e.g., length, distance, weight, volume, composition, etc.), motion-related information (e.g., position, orientation, direction of motion, acceleration, speed of motion, relative motion, etc.), logical information (links, order, couplings, interactions, dependencies, etc.), time-related information (e.g., time, total duration, frequency, period, etc.), and / or functional information (e.g., current intensity, effect, operating point space, force, degree of freedom, etc.) about the original. The model can be based, for example, on data which are captured from the original by means of a sensor and / or are processed during the modelling.Furthermore, reference is made herein to a relative movement between two objects (e.g. plasma source and surface), which is explained on the basis of a movement of one of the objects (for example the plasma source) while the other of the objects is stationary with respect to a reference point. In this regard, it can be understood that the reference point may be fixed relative to the surface of the earth, but this need not necessarily be. The reference point can also move relative to the surface of the earth, for example in such a way that both objects move relative to the surface of the earth or that only the other object moves relative to the surface of the earth.Analogously, it can be understood that the same applies analogously to any other coordinate system for various aspects (e.g. the relative movement) described with reference to the comprehensible Cartesian coordinates.The term "contour" refers to the geometry of an outer boundary of an object (e.g., a body, a cavity, etc.), e.g., its surface. The contour can be expressed, for example, as a line (e.g. its coordinates or a data-based representation thereof), which results from the section of the outer boundary with a plane, which does not necessarily have to be planar. The contour may alternatively or additionally be expressed, for example, as an outer contour (e.g., its coordinates or a data-based representation thereof) of a projection of the object onto a plane that does not necessarily have to be planar. A two-dimensional contour is also referred to herein as a "topography", which can be expressed, for example, as a plane that does not necessarily have to be planar. The contour can be determined, for example, by means of a sensor which scans the outer boundary of the object, e.g. its surface. The result thereof can have a multiplicity of data points, the relative position of which with respect to one another represents the outer boundary of the object. A model of the object (e.g. its contour, e.g. topography) can have the data points, for example, or at least be based thereon, e.g. geometry data.Reference is made herein to indications of directions and axis, wherein it may be understood that a direction may run along the axis. For example, what has been described for a movement along an axis can analogously apply to a movement along a direction which runs along the axis, and vice versa.FIG. 1 illustrates the use of a plasma source 102 in a method 100 according to various embodiments in a schematic diagram, for example according to one of Examples 1 to 3.A first exemplary implementation for modifying the adhesion is based on a movement path 111 (also denoted by T) which is integrally formed with the surface 104 (e.g. its geometric contour) along which the plasma source 102 is moved. For example, the movement path 111 (or e.g. the plasma source 102) moved along the movement path 111 can have a substantially invariant distance A from the surface 104. Then, the variance of the actual distance A(T) may be less than 10% and / or within an interval [A Soll- α; A soll+ α], where A Soll denotes a reference for A, for example a specification for A or the mean value of A, and α denotes the tolerance for A, which may satisfy the following relation: α< 10 -k · A (where k=1 or k=2 or k=3). The smaller the tolerance and / or the smaller the variance, the more accurate the movement path 111 maps the contour of the surface. For example, A Soll can be an operating parameter predefined by the plasma source, can be determined and / or can be compared with the actual distance corresponding thereto for regulating the modification of the adhesion.The first or an alternative second exemplary implementation for modifying the adhesion is based on a movement path T, which can satisfy the following relation in Cartesian coordinates x, y, z, expressed, i.e. T=T(x,y,z): T=O+β, where β denotes the normal vector of the surface O, the magnitude of which fluctuates at most by 10%, and where O=O(x, y, z) denotes an actual geometry of the surface (e.g. its topography) in Cartesian coordinates x, y, z, which can be implemented, for example, by means of a model.The first, second or an alternative third exemplary implementation for modifying the adhesion may be meandering when projected onto the surface. This achieves a surface processing of the surface. Alternatively or additionally, mutually directly adjacent sections of the movement path 111 can be arranged at least in such a way that at least one section of the surface is exposed to the plasma several times.More generally, the plasma source can have an opening (also referred to as a plasma opening) by means of which the plasma supplies gas and / or from which the plasma exits. In this regard, it can be understood that the description for the movement of the plasma source can apply analogously to the movement of the plasma opening and vice versa.An exemplary implementation of the plasma source 102 is of the so-called point source type, which is explained in more detail below. For example, the point source can have an oval (e.g. round) plasma opening, from which the plasma preferably exits. An alternative exemplary implementation of the plasma source 102 is of the so-called line source type. The line source can have a gap-shaped plasma opening (e.g. an elongate gap as a plasma opening), from which the plasma preferably exits.FIG. 2 illustrates a plasma source 200 of the point source type according to various embodiments in a sectioned perspective view, for example according to Example 14. The plasma source 200 comprises a (e.g. cooled) housing 204 which comprises the plasma opening and is penetrated by a gas channel 204 kwhich opens into the plasma opening and / or a plasma formation region 206 adjoining the housing; one or more than one electrode 204 which is preferably galvanically separated from the gas channel; and optionally a gas line 202 which opens into the gas channel 204 kand / or the plasma formation region 206. In operation, a working gas (e.g., argon) may be supplied to the plasma formation region 206 via the gas channel 204 k, and an electric field may be formed in the gas channel 204 to which the plasma forming gas is exposed via the one or more than one electrode 202, for example, by applying a voltage to the one or more than one electrode 202. Optionally, a reactive gas (e.g. oxygen) and / or a gaseous starting compound for a CVD can be supplied to the plasma formation region 206 by means of the gas line 202 (insofar present), which is excited by means of the plasma 106.An exemplary implementation of the reactive gas comprises a polymer or a precursor of the polymer, by means of which the surface can be coated.An exemplary implementation of the plasma source 200 is supported by means of a bearing device (e.g. comprising a robot arm) which provides the plasma source 200 with f=2 or f=3 degrees of translational freedom, which makes it possible for this plasma source 200 to be displaced along f directions, e.g. axes.FIGS. 3A to 3C illustrate the method 100 in various schematic views according to various embodiments, e.g. according to Example 31, of which a sectioned side view shows a coating process 300 aof the method 100, a plan view shows a result 300 bof the adhesion-modifying processing of the surface 104 (also referred to as adhesion-modified surface 300 b), and a plan view shows a result 300 cof the structuring by means of the adhesion-modified surface 300 bcomprising the structured layer 308 s.In the illustrated exemplary implementation of the surface 104, this is provided by a workpiece 302, which can be, for example, a curved plate, for example a glass pane.The method may include coating the adhesion-modified surface 300 bby means of the coating process. The adhesion-modified surface 300 bmay include, for example, one or more than one portion 304 ain which the actual adhesion strength has a gradient (then also referred to as adhesion transition portion 304 a).For example, the adhesion of the adhesion transition portion 304 acan decrease towards a (e.g. stiff-shaped) portion 304 of the surface 104 (also referred to as surface portion 304) which has been processed by means of the plasma in an adhesion-reducing and / or non-adhesion-promoting manner. Alternatively or additionally, the adhesion may increase towards a (e.g. stiff-shaped) section 314 which has been processed by means of the plasma in an adhesion-promoting and / or non-adhesion-reducing manner. For example, the adhesion transition section 304 acan adjoin the surface section 304, e.g. surrounding it, which has been processed in an adhesion-reducing and / or non-adhesion-promoting manner.In the exemplary configuration illustrated herein, the later-formed layer 308 is to be at least stripped from the surface portion 304. For this purpose, the surface section 304 can be processed by means of the plasma in an adhesion-reducing manner. The description in this regard can analogously apply to the fact that the layer 308 formed later remains only on an adhesion-modifyingly processed surface section 304 and is otherwise detached. In this case, the surface section 304 can be processed by means of the plasma in an adhesion-promoting manner, for example.For example, the adhesion-modified surface may have a plurality of sections which differ from one another, for example in a time for which they were subjected to an adhesion-modifying process (also referred to as adhesion-modifying process time), and / or one of one type of the adhesion-modifying process (for example of the adhesion-promoting or adhesion-reducing type).The coating process 300 acan be carried out by means of a processing device 306 which is configured to form a layer 308 on the adhesion-modified surface 300 b(then also referred to as coating device 306). For example, the coating device 306 can be configured as a sputtering device, e.g. having a rotatably mounted target. Illustratively, it should be noted here that the sputtering device can be configured to sputter the target by means of a plasma 306 p, which however is at a distance from the surface 104.An exemplary implementation of the coating process 300 amay be configured to emit a coating material towards the adhesion-modified surface 300 b, by means of which the formation of the layer 308 takes place. Alternatively or additionally, the coating process according to example 4 can be carried out by means of a free-standing and plate-shaped shadow mask 310 which at least partially (partially or completely) covers the adhesion-modified surface section 304 and is at a distance from the surface section 304. The shadow mask 310 allows the size of the adhesion-modified surface portion 304 to be minimized and therefore saves effort and costs.After coating the adhesion-modified surface section 304 with the coating material, the starting layer formed therewith can be structured to form the structured layer 308 s, for example by means of a (e.g. chemical or mechanical) process (also referred to as structuring process), examples of which include: blowing off, washing, abrading, partial dissolution, etc. By means of the structuring process, sections of the starting layer which are formed at least on the adhesion-modified surface section 304 can be removed, and / or the adhesion-modified surface section 304 can be at least partially exposed from the starting layer.The result 300 cof the patterning process may include the surface 104 partially coated with a patterned layer 308 s. The optionally still present adhesion-modified surface section 304 of the surface can be free of the structured layer 308. In some embodiments, the result of the adhesion-modifying process may degrade over time, such that the result 300 cof the patterning process may not necessarily have the adhesion-modified surface portion 304.FIG. 4 illustrates the method 100 according to various embodiments in a schematic process diagram 400, preferably configured according to example 16 or 17. the method comprises, in 401, driving an actuator 450 configured to influence a process 411 for modifying an adhesion of the surface 104 to the layer 308 by means of the plasma 106 to which the surface 104 is exposed before forming the layer 308.In a first exemplary implementation, the driving 401 takes place based on a spatial desired distribution S of the structured layer 308 s, which, when expressed for example in Cartesian coordinates x, y, z, can be represented in the form S=S(x,y,z). The spatial desired distribution S of the layer 308 may be implemented, for example, by means of a model 472 of the structured layer 308 s(also referred to as layer model 472).In the first or an alternative second exemplary implementation, the activation 401 takes place based on a desired movement path 111 s(also referred to as trajectory), which represents a movement of the plasma relative to the surface 104 in a plurality of directions, e.g. axes. The desired movement path 111 smay be implemented, for example, by means of a model 474 of the relative movement between surface 104 and plasma 106 (also referred to as movement model 474) and / or based on a model 470 of the geometry (also referred to as geometry model 470), e.g. of the surface or of the workpiece. The geometry model 470 can be determined, for example, by means of a sensor 402 and / or implement an actual geometry O=O(x, y, z) of the surface (e.g. the topography thereof). The geometry model 470 and / or the movement model 474 may be provided by means of a control device 350, e.g. determined by means of the control device and / or by means of the sensor, e.g. based on a result 304 rof the detection 403 of the surface 104.As explained above, the coating process 405 may include removing one or more than a portion of the starting layer 308 (as an exemplary measure of the structuring process 407), e.g. removing at least a portion of the layer that contacts the (e.g. adhesion-modified) surface portion 304 (also referred to as exposing the surface portion 304).In an exemplary working example, an already existing processing system comprising a shadow mask 310 is retrofitted by means of the method according to various embodiments. This makes it easier to increase the accuracy of the coating process 405 carried out by means of the shadow mask 310.Various embodiments facilitate precise structuring of a layer on an uneven surface, for example a rigid workpiece. For this purpose, according to various embodiments, the adhesion of the surface can be modified by means of a plasma which is moved relative to the surface along a plurality of (e.g. two or 3) directions (e.g. meandering), e.g. axes. This makes it easier to move (e.g. displace) the plasma along a movement path relative to the surface which is curved multiple times and / or runs at least along a plurality of directions (e.g. meandering), e.g. axes.According to various embodiments, partial covering of the adhesion-modified surface section 304 takes place by means of the shadow mask, which makes it possible to coat the surface section. Alternatively or additionally, a two- or three-dimensional relative movement takes place between the plasma source and the surface, for example along a movement path which is integrally formed on the surface and / or is based thereon.An exemplary implementation of various embodiments is based on the finding that the surface energy of a workpiece can be locally influenced in a targeted manner and that the adhesion of the surface is a function of the surface energy. For example, this may improve adhesion, for example for adhesion, bioactivation, etc.An exemplary implementation of various embodiments uses an atmospheric plasma source, which allows a particularly flexible implementation of this in order to modify the surface locally before it is coated in such a way that the adhesion failure of the layer applied in a vacuum system occurs on the partial surface exposed to the plasma. During a subsequent cleaning of the surface, the layer on the partial surface can be removed, for example by blowing off portions of the layer, washing off portions of the layer, and / or abrading portions of the layer, etc.An exemplary implementation of modifying the adhesion is arranged such that the result of modifying the adhesion decreases over time, which simplifies the process since no neutralization of the result is required.In an exemplary implementation of the method, a target state of the plasma source (e.g. operating parameters thereof, such as for power, for one or more working gases, one or more chemical, etc.) is determined, for example according to a target result of modifying the adhesion. Alternatively or additionally, this can be effected analogously for the formation of the layer, for example the structuring of the layer. Clearly, those operating parameters of the plasma source can be determined, for example, which bring about the desired adhesion behavior of the applied layer on the surface 104, and / or a suitable process for removing layer sections can be determined, e.g. optimized.In an exemplary working example 1, this may be done as follows. 1. a processing device (e.g., plasma treatment source) having a plasma source with correspondingly set operating parameters is placed on a robot arm; 2. based on the model 470 of the substrate (e.g., the substrate geometry data) and / or the model 472 of the layer (e.g., implementing a structuring pattern), a sequence program for driving the plasma source and / or driving the robot arm is determined (e.g., implementing the setpoint movement of the robot arm); 3. the local modification of the surface energy is carried out on the workpiece (e.g., in the atmosphere) by means of the plasma source and / or driving the robot arm; 4. the workpiece processed in this way is coated by means of a coating installation, for example in a vacuum chamber of the coating installation; 5. the layer sections on the adhesion-modified surface sections are removed; 6. the result of the modification can optionally be neutralized.A working example 2 set forth in working example 1 may additionally be patterned by means of a shadow mask which at least partially shields one or more than one adhesion-modifying surface portion from the coating material. As a result, in particular in the case of a workpiece in which only a small partial surface is to be coated, the adhesion-modifying processing can be shortened in time and designed to be particularly resource-saving (for example with regard to energy and / or consumption of working gas and / or chemicals).Various embodiments provided herein improve the limitation with regard to the achievable tolerances of the structure sizes (typical limiting sizes of the plasma sources are, for example, greater than 1 mm) and dimensional accuracy of the edges (positioning accuracy of the typical robot arm in this size is, for example, 0.02 mm and greater). This limitation enhancement can also extend the field of application to a large area coating and special applications where it can be tolerated.Various embodiments provided herein provide one or more than one of:flexible adaptation of the structuring to the substrate geometry;a facilitated implementability, for example based on existing technical concepts, and / or extendability on free-form substrates;a flexible design of the structuring pattern;a particularly efficient processing when using the shadow mask.

Claims

Use of a processing device for modifying adhesion of a surface (104) to a layer (308) by means of a plasma (106) to which the surface (104) is exposed before forming the layer (308), wherein the processing device is configured to move a spatial distribution of the plasma (106) relative to the surface (104) along a plurality of axes.Use according to claim 1, wherein the modifying comprises modifying a spatial distribution of the adhesion, and preferably reducing the adhesion at least in portions.Use according to any of claims 1 to 2, wherein the surface (104) is uneven and / or provided by a rigid workpiece (302).Use according to any one of claims 1 to 3, wherein the spatial distribution of the plasma (106) is provided by means of a plasma source (200) of the processing device, wherein the plasma source (200) and the surface (104) are mounted movably relative to each other along the plurality of axes.Use according to any of claims 1 to 4, wherein forming the layer (308) comprises patterning the layer (308) based on a result of modifying the adhesion; and preferably by means of a shadow mask (310) at least partially covering a portion of the surface (104).Use according to any one of claims 1 to 5, wherein the surface (104) and / or the plasma (106) is exposed to an atmospheric pressure.Use according to one of Claims 1 to 6, wherein the processing device is configured to move the spatial distribution of the plasma (106) relative to the surface (104) along a plurality of axes in accordance with a desired movement path which is integrally formed with a contour of the surface (104) or is based thereon.Use according to any one of claims 1 to 7, wherein the surface (104) is sequentially exposed to the plasma (106).A method (100) comprising: • determining a target spatial distribution of a layer (308) on a surface (104), • driving an actuator based on the target distribution, wherein the actuator is configured to influence a process for modifying adhesion of the surface (104) to the layer (308) by means of a plasma (106) to which the surface (104) is exposed prior to forming the layer (308) such that a spatial distribution of the plasma (106) relative to the surface (104) is displaced along multiple axes.A computer program adapted to perform the method of claim 9.A computer readable medium storing instructions which, when executed by a processor, are configured to cause the processor to perform the method of claim 9.A control device comprising one or more than one processor configured to perform the method of claim 9.A processing system comprising: • a coating device for forming a layer (308) on a surface (104); • a processing device for modifying adhesion of the surface (104) to the layer (308) by means of a plasma (106) to which the surface (104) is exposed prior to forming the layer (308); • wherein the processing device is configured to move a spatial distribution of the plasma (106) relative to the surface (104) along a plurality of axes.Use of a shadow mask (310) for shading a first portion (304) of a surface (104) with respect to a coating process (300a) by means of which a coating material is emitted towards the surface (104), such that a second portion (314) of the surface (104), in which adhesion of the surface (104) with respect to the coating material decreases towards the first portion (304), is exposed to the coating material.

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