METHOD FOR MANUFACTURING AN OPTICAL COMPONENT AND LIGHT-EMISSIVING DEVICE

Abstract

A method for manufacturing an optical component comprises: providing a polycrystalline wavelength conversion component containing phosphor particles and having a first surface and a second surface opposite the first surface; forming a modified region within the wavelength conversion component by focusing laser light within the wavelength conversion component; and splitting the wavelength conversion component, wherein the modified region is a starting point, which includes pressing the wavelength conversion component from a first surface side.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application is based on and claims priority from Japanese Patent Application No. 2023-121810, filed on July 26, 2023, and Japanese Patent Application No. 2024-034603, filed on March 7, 2024, the entire contents of which are incorporated herein by reference. BACKGROUND

[0002] The present disclosure relates to a method for manufacturing an optical component and a light-emitting device.

[0003] There is a known light-emitting device in which a plate-shaped optical component, such as a wavelength conversion component, is arranged on a light-emitting element, and a reflective component covers lateral surfaces of the light-emitting element and lateral surfaces of the optical component. For example, Japanese Patent Publication No. 2018-97060 describes a method for obtaining a wavelength conversion component by forming a break groove in a first main surface of a base material and cleaving the base material along the break groove, and also describes a light-emitting device in which lateral surfaces of the wavelength conversion component are covered by a reflective component, such as a resin. OVERVIEW

[0004] It is an object of an embodiment of the present disclosure to provide a method for manufacturing an optical component having good adhesion to a cover component.

[0005] A method for manufacturing an optical component according to an embodiment of the present disclosure includes: providing a polycrystalline wavelength conversion component including phosphor particles and having a first surface and a second surface opposite to the first surface; forming a modified region within the wavelength conversion component by focusing laser light within the wavelength conversion component; and pressing the wavelength conversion component from a first surface side to cleave the wavelength conversion component, wherein the modified region is a starting point. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view schematically illustrating an optical component according to a first embodiment; Fig. 2 is a cross-sectional view of the optical component taken through line II-II of Fig. 1; Fig. 3 is a schematic diagram (part 1) illustrating a method of manufacturing an optical component according to the first embodiment; Fig. 4A and Fig. 4B are schematic diagrams (part 2) illustrating the method of manufacturing the optical component according to the first embodiment; Fig. 5A and Fig. 5B are schematic diagrams (part 3) illustrating the method of manufacturing the optical component according to the first embodiment; Fig. 6A and Fig. 6B are schematic diagrams illustrating a method of manufacturing an optical component according to a modification of the first embodiment; Fig. 7 is a perspective view schematically illustrating a light-emitting device according to a second embodiment; Fig. Fig. 8 is a cross-sectional view of the light-emitting device taken through line VIII-VIII of Fig. 7; Fig. Figure 9 is a diagram showing laser microscopic views of the lateral surfaces of wavelength conversion devices; and Fig. Figure 10 is a table showing measurement results of Sa and Ra of the lateral surfaces of the wavelength conversion components. DETAILED DESCRIPTION

[0006] A manufacturing method according to an embodiment of the present disclosure and an optical component obtained by the manufacturing method (which may be referred to as an "optical component according to an embodiment") are described below with reference to the accompanying drawings. In the following description, terms indicating specific directions and positions (e.g., "upper," "upward," "lower," "downward," and other terms associated with these terms) are used where necessary. These terms are used to facilitate understanding of the present invention with reference to the drawings, and the technical scope of the present invention is not limited by the meaning of these terms. The same reference numerals appearing in a plurality of drawings refer to the same or similar portions or components.

[0007] Furthermore, the embodiments described below illustrate a method for manufacturing an optical component or the like to embody the technical ideas of the present invention, but the present invention is not limited to the following description. Moreover, unless otherwise specified, the dimensions, materials, shapes, relative arrangements, and the like of components described below are described as examples and are not intended to limit the scope of the present invention thereto. The contents described in one embodiment can also be applied to other embodiments and modifications. The sizes, positional relationships, and the like of the components shown in the drawings may be exaggerated for clarity.In addition, to avoid over-complication of the drawings, a schematic view in which some elements are not shown can be used, or an end view showing only a cut surface can be used as a cross-sectional view. Optical component 50 according to a first embodiment

[0008] Fig. 1 is a perspective view schematically illustrating an optical component according to a first embodiment. Fig. 2 is a cross-sectional view of the optical component taken through line II-II of Fig. 1. In Fig. 1 and Fig. 2, an X direction and a Y direction that are orthogonal to each other are defined, and a direction orthogonal to the X direction and the Y direction is defined as the Z direction. In the other drawings, the X direction, Y direction, and Z direction can be specified in the same way.

[0009] As in Fig. 1 and Fig. As shown in Figure 2, the optical component 50 has a plate shape. The optical component 50 has a first surface 50a, a second surface 50b opposite the first surface 50a, and lateral surfaces 50c connected to the first surface 50a and the second surface 50b. The lateral surfaces 50c connect the outer edge of the first surface 50a and the outer edge of the second surface 50b. In the optical component 50, the first surface 50a and the second surface 50b are flat surfaces.

[0010] The optical component 50 has, for example, a rectangular parallelepiped shape. In this case, the first surface 50a and the second surface 50b of the optical component 50 both have a rectangular shape, and the optical component 50 has four rectangular lateral surfaces 50c. As used herein, the rectangular shape refers to a rectangle or a square. In the example of Fig. 1 and Fig. 2, the first surface 50a and the second surface 50b are parallel to the XY plane. The lateral surfaces 50c are parallel to the XZ plane or the YZ plane. The Z direction is a height direction (thickness direction) of the optical component 50.

[0011] The optical component 50 is a polycrystalline wavelength conversion component containing phosphor particles. The optical component 50 is configured to convert incident light into light having a different wavelength and emit the converted light. The optical component 50 can emit a portion of the incident light. The optical component 50 can convert all of the incident light into light having a different wavelength. In this case, the light incident on the optical component 50 is not emitted by the optical component 50.

[0012] The optical component 50 is a light-transmitting component. In a light-emitting device including a light-emitting element, the optical component 50 can be used as a component that forms a light-emitting surface of the light-emitting device. The optical component 50 can adjust the light emission chromaticity of the light-emitting device by converting light emitted by the light-emitting element and incident on the second surface 50b into light having a different wavelength and emitting the converted light from the first surface 50a.

[0013] The optical component 50 includes, at different positions in the height direction (Z direction) of a lateral surface 50c, a first region 51 where the surfaces of phosphor particles are exposed, and a second region 52 where the cross sections of phosphor particles are exposed. The cross sections of phosphor particles are cut surfaces obtained by cleaving the phosphor particles. The optical component 50 may include a plurality of first regions 51 at different positions in the height direction (Z direction) of the lateral surface 50c such that the plurality of first regions 51 are spaced apart from each other.

[0014] The first region 51 is located continuously across all lateral surfaces 50c of the optical component 50 along the outer edge of the first surface 50a of the optical component 50. Additionally, the optical component 50 may include a first region 51 provided continuously across all lateral surfaces 50c of the optical component 50 along the outer edge of the second surface 50b of the optical component 50. The first region 51 may be located intermittently across all lateral surfaces 50c of the optical component 50.

[0015] In the optical component 50, the second region 52 may be located continuously across all lateral surfaces 50c of the optical component 50, or may be located intermittently. A plurality of second regions 52 may be provided at different positions in the height direction of a lateral surface 50c such that the plurality of second regions 52 are spaced apart from each other. In this case, a first region is located between adjacent ones of the plurality of second regions. The second region 52 is a surface where a modified region 50d in a polycrystal is exposed on the lateral surface 50c of the optical component 50. The modified region 50d may be formed by irradiating it with laser light in a manufacturing process of the optical component 50, as described later.The modified region 50d is a region where individual materials constituting the polycrystalline optical component 50 containing phosphor particles are locally melted by the thermal energy of the laser light, and where individual crystalline grains are melted and grain boundaries are partially mixed. The modified region 50d is formed along a region within the second region 52.

[0016] The surface roughness of the first region 51 is greater than the surface roughness of the second region 52 on the lateral surface of the optical component 50. The surface roughness of the first region 51 is, for example, greater than 1.0 µm, and is, for example, 2.0 µm or more and 3.0 µm or less in terms of the arithmetic average roughness Ra, according to the particle size of phosphor particles constituting a polycrystal. In contrast, the surface roughness of the second region 52 is, for example, 0.5 µm or more and 1.0 µm or less in terms of the arithmetic average roughness Ra.

[0017] As described, the optical component 50 includes, at different positions in the height direction of the lateral surface 50c, the first region 51 where the surfaces of phosphor particles are exposed and the second region where the cross sections of phosphor particles are exposed. The surface roughness of the first region 51 is greater than the surface roughness of the second region 52. Therefore, in a case where the optical component 50 is used in a light-emitting device or the like, and the optical component 50 is covered by a cover member 60 such as a resin, the cover member 60 being in contact with the first region 51 of the optical component 50, the adhesion between the cover member 60 and the optical component 50 can be improved.

[0018] From the viewpoint of adhesion between the optical component 50 and the cover component 60, the area formed by the first region 51 of the lateral surface 50c of the optical component 50 is preferably larger than the area formed by the second region 52. In a light-emitting device 1 including the optical component 50 and the cover component 60, when the lateral surface 50c of the optical component 50 has the first region 51 of a larger area, the adhesion between the optical component 50 and the cover component 60 can be improved by an anchoring effect of the uneven surface of the first region 51.

[0019] Furthermore, in the optical component 50, the second region 52 is preferably provided over all lateral surfaces 50c such that it is parallel to the upper ends of the lateral surfaces 50c. Accordingly, in a manufacturing process of the light-emitting device 1, variations in the speed at which an uncured resin constituting the cover member 60 rises along the lateral surfaces 50c can be controlled, and variations in the height of the cover positions depending on the rising speed can be controlled. That is, the optical component 50 includes the second region 52 on the lateral surfaces 50c such that the second region 52 is parallel to the upper ends of the lateral surfaces 50c, and thus, local and excessive rising of an uncured region can be reduced.Accordingly, rising of a resin to the upper surface of the optical member 50 constituting the light-emitting surface of the light-emitting device 1 can be reduced.

[0020] The optical component 50 is a polycrystalline wavelength conversion component containing phosphor particles. Examples of the optical component 50 include a sintered body made of a phosphor, a sintered body containing a phosphor and an inorganic material, and the like.

[0021] Examples of a phosphor contained in the optical component 50 include yttrium aluminum garnet-based phosphors (for example, (Y,Gd)3(Al,Ga)5O 12 :Ce), lutetium-aluminium-garnet-based phosphors (for example Lu3(Al,Ga)5O 12 :Ce), terbium-aluminium-garnet-based phosphors (for example Tb3(Al,Ga)5O 12 :Ce), CCA-based phosphors (for example Ca 10(PO4)5Cl2:Eu), SAE-based phosphors (for example Sr4Al 14 O 25 :Eu), phosphors based on chlorosilicate (for example Ca8MgSi4O 16 Cl2:Eu), silicate-based phosphors (e.g. (Ba,Sr,Ca,Mg)2SiO4:Eu), oxynitride-based phosphors, such as β-SiAlON-based phosphors (e.g. (Si,Al)3(O,N)4:Eu) and α-SiAlON-based phosphors (e.g. Ca(Si,Al) 12 (O,N) 16 :Eu), nitride-based phosphors, such as LSN-based phosphors (for example (La,Y)3Si6N 11 :Ce), BSESN-based phosphors (e.g. (Ba,Sr)2Si5N8:Eu), SLA-based phosphors (e.g. SrLiAl3N4:Eu), CASN-based phosphors (e.g. CaAlSiN3:Eu) and SCASN-based phosphors (e.g. (Sr,Ca)AlSiN3:Eu), fluoride-based phosphors such as KSF-based phosphors (e.g. K2SiF6:Mn), KSAF-based phosphors (e.g. K2(Si 1-x Al x )F 6-x:Mn, where x satisfies the condition 0 < x < 1), and MGF-based phosphors (e.g., 3.5MgO 0.5MgF2 GeO2:Mn), quantum dots exhibiting a perovskite structure (e.g., (Cs,FA,MA)(Pb,Sn)(F,Cl,Br,I)3, where FA and MA represent formamidinium and methylammonium, respectively), II-VI quantum dots (e.g., CdSe), III-V quantum dots (e.g., InP), and quantum dots exhibiting a chalcopyrite structure (e.g., (Ag,Cu)(In,Ga)(S,Se)2).

[0022] Examples of an inorganic material included in the optical component 50 include aluminum oxide, aluminum nitride, silicon oxide, yttrium oxide, zirconium oxide or magnesium oxide, gadolinium oxide, and yttrium aluminum perovskite (YAP), and the like.

[0023] The average particle size of phosphor particles contained in the optical component 50 may be, for example, 1 µm or more and 30 µm or less. The average particle size of an inorganic material contained in the optical component 50 may be, for example, 1 µm or more and 20 µm or less. The average particle size of each material contained in the optical component 50 can be calculated from an SEM image taken using a scanning microscope. For example, in an SEM image of a cross-section of the optical component 50, the maximum width of a cross-section of the crystal phase defined by a grain boundary and the minimum width of the cross-section passing through a center point of the maximum width are measured, and an average of the maximum width and the minimum width is defined as a particle size.In addition, an arithmetic average value of particle sizes in a specific area of ​​an SEM image with the same magnification is defined as an average value of the particle sizes. Method for manufacturing an optical component according to the first embodiment

[0024] A method for manufacturing an optical component according to the first embodiment includes the steps of: preparing a polycrystalline wavelength conversion component containing phosphor particles and having a first surface and a second surface opposite to the first surface; condensing laser light into the wavelength conversion component to form a modified region within the wavelength conversion component; and cleaving the wavelength conversion component, with the modified region as a starting point, by pressing the wavelength conversion component from a first surface side.

[0025] Each of the manufacturing steps of the method for manufacturing the optical component according to the first embodiment will be described below with reference to the drawings.

[0026] Fig. 3 to Fig. 5B are schematic diagrams illustrating the method for manufacturing the optical component according to the first embodiment. In particular, Fig. 3 to Fig. 4B are perspective views illustrating the method of manufacturing the optical component. Fig. 5A and Fig. 5B are cross-sectional views illustrating the process for manufacturing the optical component. Step of preparing the wavelength conversion component

[0027] As in Fig. 3, a polycrystalline wavelength conversion component 50S is prepared, which contains phosphor particles and has a first surface 50a, a second surface 50b opposite the first surface 50a, and a lateral surface 50c connected to the first surface 50a and the second surface 50b. In the example of Fig. 3, the first surface 50a and the second surface 50b are parallel to the XY plane. The lateral surface 50c is parallel to the XZ plane or the YZ plane. The Z direction is the height direction (thickness direction) of the wavelength conversion component 50S. The thickness of the prepared wavelength conversion component is, for example, 50 µm or more and 200 µm or less.

[0028] The wavelength conversion component 50S includes a plurality of regions 50R, each of which serves as an optical component 50 after the wavelength conversion component 50S has been singulated. In the example of Fig. 3, the boundaries of the regions 50R are defined by straight dash-dotted lines with two dots extending in the X direction and by straight dash-dotted lines with two dots extending in the Y direction. The regions 50R are arranged two-dimensionally in a matrix in a plan view of the wavelength conversion component 50S. In the example of Fig. 3, each of the regions 50R has a square shape in the plan view of the wavelength conversion component 50S. The two-dot chain lines are virtual lines indicating the boundaries and are not actually visually perceived. Step of forming a modified area

[0029] Next, as in Fig. 4A and Fig. 4B, a modified region 50d is formed within the wavelength conversion member 50S by focusing laser light La inside the wavelength conversion member 50S.

[0030] The laser light La can be emitted, for example, from a picosecond laser device or a femtosecond laser device. The laser light La has an oscillation wavelength of, for example, 700 nm or more and 1500 nm or less. The wavelength conversion component 50S preferably has a light transmittance of 60% or more with respect to the laser light La.

[0031] In particular, as in Fig. 4A, the laser light La is emitted in a direction substantially orthogonal to the second surface 50b of the wavelength conversion member 50S. The second surface 50b is irradiated with the laser light La at positions on a two-dot chain line indicating the boundary of the regions 50R. The laser light La is focused at positions that are within the wavelength conversion member 50S and closer to the second surface 50b than the center of the wavelength conversion member 50S in the thickness direction (Z direction).

[0032] As in Fig. 4A, the laser light La is irradiated, for example, onto the two-dot chain line extending in the Y direction and indicating the boundary of the regions 50R. Accordingly, as shown in Fig. As shown in Figure 4B, a modified region 50d is formed within the wavelength conversion component 50S along the Y direction in a plan view. In the wavelength conversion component splitting step described later, a region where the modified region 50d is not formed is split along grain boundaries, with the modified region 50d as a starting point. Therefore, the modified region 50d is preferably formed in a linear shape in a plan view.

[0033] As in Fig. 3, if there is a plurality of (in the example of Fig. 3 five) two-dot chain lines indicating the boundaries of regions 50R along the Y direction, the laser light La is sequentially irradiated along each of the two-dot chain lines such that a modified region 50d is formed within the wavelength conversion device at each condensation position.

[0034] Subsequently, the laser light La is irradiated along a two-dot chain line extending in the X direction, which indicates the boundary of regions 50R. As a result, a modified region 50d in a linear shape is formed within the wavelength conversion component 50S along the X direction in a plan view. As shown in Fig. 3, if there is a plurality of (in the example of Fig. 3, there are three) two-dot chain lines indicating the boundaries of regions 50R, the laser light La is emitted along each of the plurality of two-dot chain lines such that a modified region 50d is formed within the wavelength conversion member 50S at each condensation position.

[0035] In the manner described above, modified regions 50d are formed within the wavelength conversion component 50S in a lattice pattern such that the modified regions 50d overlap the boundaries of the regions 50R in the plan view of the wavelength conversion component 50S. Each of the modified regions 50d may be formed within the wavelength conversion component 50S at a position spaced from the first surface 50a and the second surface 50b of the wavelength conversion component 50S, or it may be formed within the wavelength conversion component 50S in such a way that it is connected to the first surface 50a and the second surface 50b. Each of the modified regions 50d is preferably formed at a position spaced from the first surface 50a and the second surface 50b.By irradiating the laser light La such that the laser light La is focused within the wavelength conversion component 50S, the modified regions 50d can be located at a distance from the first surface 50a and the second surface 50b of the wavelength conversion component 50S. By arranging the modified regions 50d as described above, contamination by burnout, adhesion of dust such as smoke to the first surface 50a and the second surface 50b, or the like caused by the irradiation of the laser light La when the modified regions 50d are formed can be reduced.

[0036] As in Fig. As shown in Figure 4B, in the modified region forming step, a modified region 50d is preferably formed in a region at a depth D of more than 0 and 10 μm or less from the second surface 50b of the wavelength conversion component 50s. The depth D is a distance from the second surface 50b to a position within the modified region 50d, the position being closest to the second surface 50b in the Z direction.

[0037] Considering easy cleavage of the wavelength conversion member 50S and adhesion to the cover member 60 in the light-emitting device 1, the length L of the modified region 50d in the depth direction (Z direction) of the wavelength conversion member 50S is preferably 2% or more and 30% or less of the thickness T of the wavelength conversion member 50S. Further, the width W of the modified region 50d in a direction parallel to the second surface 50b of the wavelength conversion member 50S is preferably 1 μm or more and 10 μm or less.

[0038] By setting the length L of the modified region 50d to 2% or more of the thickness T of the wavelength conversion member 50S and the width W of the modified region 50d to 1 μm or more, the wavelength conversion member 50S can be easily cleaved along the modified region 50d. By setting the length L of the modified region 50d to 30% or less of the thickness T of the wavelength conversion member 50S and the width W of the modified region 50d to 10 μm or less, the area of ​​a first region on a lateral surface 50c of an optical member 50 to be formed can be increased, and the adhesion between the optical member 50 and the cover member 60 can be improved.

[0039] To facilitate cleaving of the wavelength conversion component 50S, the length L of the modified region 50d in the depth direction (Z direction) of the wavelength conversion component 50S may be 30% or more of the thickness T of the wavelength conversion component 50S. However, it is assumed that the modified region 50d is a region where the wavelength conversion efficiency is reduced by the irradiation of the laser light. Thus, from the viewpoint of improving the light extraction efficiency of the light-emitting device 1, the length L of the modified region 50d with respect to the thickness T of the wavelength conversion component 50S is preferably set to be within the above-described range.

[0040] The modified region 50d is formed when the energy of the laser light La at the condensation position exceeds a processing threshold of the material of the wavelength conversion component 50S. The length L increases as the energy of the laser light La at the condensation position increases. The width W is smaller than the spot diameter of the laser light La at the condensation position. Step of splitting the wavelength conversion component

[0041] Next, the wavelength conversion member 50S is cleaved, with the modified region 50d as a starting point, by pressing the wavelength conversion member 50S from the first surface 50a side. In this step, for example, the wavelength conversion member 50S can be cleaved by pressing the wavelength conversion member 50S along the linear modified region 50d.

[0042] Specifically, a crack is generated in the modified region 50d formed by the irradiation of the laser light La, and the wavelength conversion component 50S is pressed to be cleaved with the crack propagating from the modified region 50d as a starting point. In a region where the modified region 50d is not formed, the crack propagates along the grain boundaries of the polycrystalline wavelength conversion component 50S in the pressing direction.

[0043] As an example, a splitting method using a support member 310 and a press member 320 is described. First, as in Fig. 5A, the support member 310 is disposed on the second surface 50b of the wavelength conversion member 50S, and the wavelength conversion member 50S is pressed by the pressing member 320 from the first surface 50a side.

[0044] The support member 310 is preferably elastically deformable by being pressed by the pressing member 320. The support member 310 can be formed, for example, from rubber, resin, metal, or the like. The support member 310 elastically deforms by being pressed by the pressing member 320, which allows the wavelength conversion member 50S to be locally pressed, and thus the wavelength conversion member 50S can be easily cleaved along the modified region 50d.

[0045] The pressing member 320 can be caused to press the entire first surface 50a at once, or can be caused to press a portion of the first surface 50a. The pressing member 320 is preferably configured to move on the first surface 50a while pressing a portion of the first surface 50a. Examples of the pressing member 320 include a member such as a roller that can move on the first surface 50a while being rotated. The pressing member 320 can be a member that does not rotate as long as the pressing member 320 can move smoothly on the first surface 50a. In the example of Fig. 5A and Fig. 5B, the pressing member 320 has an elongated cylindrical shape, and the pressing member 320 is arranged with its longitudinal direction in the Y direction.

[0046] For example, the pressing member 320 presses the wavelength conversion member 50S while being located on the first surface 50a in one direction (the X direction in the example of Fig. 5A and Fig. 5B) orthogonal to a direction (the Y direction in the example of Fig. 5A and Fig. 5B) along which the modified region 50d is formed. Accordingly, the wavelength conversion component 50S is pressed along the modified region 50d, which is formed in a linear shape in a plan view, and as shown in Fig. 5B, the wavelength conversion component 50S is cleaved, with the modified region 50d as a starting point. Subsequently, the pressing component 320 is rotated 90 degrees in the XY plane so that the longitudinal direction of the pressing component 320 corresponds to the X direction. Then, the pressing component 320 presses the wavelength conversion component 50S while resting on the first surface 50a in the Y direction of Fig. 5A and Fig. 5B. In this way, all modified regions 50d arranged in a grid pattern can be cleaved such that a plurality of isolated optical components 50 can be obtained.

[0047] A modified region 50d formed within the wavelength conversion member 50S is not easily visible from the first surface 50a side, and thus, it is difficult to align the position where the pressing member 320 presses the wavelength conversion member 50S with the position of the modified region 50d. However, by pressing the wavelength conversion member 50S in one direction while causing the pressing member 320 to move on the first surface 50a, the wavelength conversion member 50S may be easily split even if the position of the modified region 50d is not accurately detected.In addition, by providing the wavelength conversion member 50S with a mark indicating a direction along which the modified region 50d is formed, a direction in which the pressing member 320 is moved with respect to the direction along which the modified region 50d is formed can be easily determined.

[0048] Each of the optical components 50 obtained after the wavelength conversion component 50S is split includes a first region 51 where the surfaces of phosphor particles are exposed and a second region 52 where the cross sections of phosphor particles are exposed at different positions in the height direction of a lateral surface 50c, as shown in Fig. 1 and Fig. 2. The second region 52 is the cleaved surface of the modified area 50d.

[0049] As described, by forming the modified region 50d within the wavelength conversion member 50S, even if the length L and the width W of the modified region 50d are small, the wavelength conversion member 50S can be easily cleaved along the modified region 50d, with the modified region 50d being a starting point of cracking.

[0050] Furthermore, for example, if the wavelength conversion component 50S is cut by cutting using a blade, a cutting allowance corresponding to the width of the blade would be required. However, in a method of cutting the wavelength conversion component 50S along the modified region 50d, as in the manufacturing method according to the present embodiment, substantially no cutting allowance is required, and thus the number of optical components 50 obtained from the wavelength conversion component 50S can be increased. modification

[0051] Fig. 6A and Fig. 6B are schematic diagrams illustrating a method for manufacturing an optical component according to a modification of the first embodiment. In particular, Fig. 6A and Fig. 6B are perspective views illustrating the method of manufacturing the optical component.

[0052] In the first embodiment, an example was described in which the laser light La is irradiated from the side of the second surface 50b opposite to the side (side of the first surface 50a) that is pressed at the time of splitting. In the modification of the first embodiment, as shown in Fig. 6A and Fig. 6B, the laser light La is irradiated from the side (side of the first surface 50a) which is pressed at the time of splitting.

[0053] In particular, as in Fig. 6A, the laser light La is irradiated in a direction substantially orthogonal to a first surface 50a of a wavelength conversion member 50S. The laser light La is focused at positions deeper than those of the first embodiment. That is, the laser light La is focused at positions within the wavelength conversion member 50S, the positions being closer to a second surface 50b than the center of the wavelength conversion member 50S in the height direction (Z direction).

[0054] By irradiating the laser light La along a two-dot chain line extending in the Y direction and indicating the boundary of the regions 50R, a modified region 50d is continuously formed in a linear shape along the Y direction in a plan view within the wavelength conversion component 50S, as shown in Fig. 6B.

[0055] Subsequently, the laser light La is irradiated along a virtual line extending in the X direction, which indicates the boundary of regions 50R. Accordingly, a modified region 50d is continuously formed in a linear shape along the X direction in a plan view within the wavelength conversion component 50S.

[0056] In this way, focusing the laser light La at deeper positions allows the modified region 50d to be formed closer to the second surface 50b than in the first embodiment, even when the laser light La is irradiated from the first surface 50a side. Thereafter, as in the first embodiment with reference to Fig. 5A and Fig. 5B, the wavelength conversion component 50S is pressed from the first surface 50a side to be cleaved such that a plurality of singulated optical components 50 can be obtained. Second embodiment

[0057] In a second embodiment, an example of a light-emitting device including the optical component according to the first embodiment will be described.

[0058] Fig. 7 is a perspective view schematically illustrating the light-emitting device according to the second embodiment. Fig. Fig. 8 is a cross-sectional view of the light-emitting device taken through line VIII-VIII of Fig. 7. Fig. 8 illustrates a cross-section of the light-emitting device 1 taken along a plane orthogonal to the upper surface of a light-emitting element 20.

[0059] As in Fig. 7 and Fig. 8, the light-emitting device 1 includes a wiring substrate 10, the light-emitting element 20, a protective element 30, a light guide member 40, the optical member 50, and the cover member 60. The light-emitting device 1 may have a configuration in which the wiring substrate 10, the protective element 30, the light guide member 40, and the cover member 60 are not included.

[0060] In the light-emitting device 1, the light-emitting element 20 is arranged on the wiring substrate 10. The light-emitting element 20 has an upper surface 20a, a plurality of lateral surfaces 20c connected to the upper surface 20a, and a lower surface 20b opposite the upper surface 20a. The plurality of lateral surfaces 20c are connected to the upper surface 20a and the lower surface 20b. In other words, each of the lateral surfaces 20c has outer edges connected to the outer edge of the upper surface 20a and to the outer edge of the lower surface 20b. Light is emitted from the upper surface 20a, the lower surface 20b, and the lateral surface(s) 20c of the light-emitting element 20. Furthermore, in the light-emitting device 1, the protective element 30 may be arranged on the wiring substrate 10.

[0061] The light-emitting element 20 has the upper surface 20a having a substantially rectangular shape. For example, the outer shape of the light-emitting element 20 is substantially a rectangular parallelepiped shape or a substantially truncated pyramid shape. In this case, the upper surface 20a and the lower surface 20b of the light-emitting element 20 have a substantially rectangular shape, and the light-emitting element 20 has four lateral surfaces 20c, each having a substantially rectangular shape or a substantially trapezoidal shape. The upper surface 20a of the light-emitting element 20 may have a polygonal shape, such as a triangular shape or a hexagonal shape. Further, the outer shape of the light-emitting element 20 may be a columnar shape or a truncated cone shape having a polygonally shaped upper surface.

[0062] The light guide member 40 continuously covers the upper surface 20a and the plurality of lateral surfaces 20c connected to the upper surface 20a of the light-emitting element 20. Specifically, the light guide member 40 covers the entire upper surface 20a and at least a portion on the upper end side (i.e., the outer edge side connected to the upper surface 20a) of each of the lateral surfaces 20c of the light-emitting element 20. The light guide member 40 has lateral surfaces 40c that are in contact with the lateral surfaces 20c of the light-emitting element 20 and are in contact with the lower surface of the optical component 50. The light guide member 40 preferably covers a larger region of each of the lateral surfaces 20c of the light-emitting element 20, and more preferably covers approximately an entirety of each of the lateral surfaces 20.That is, the lateral surfaces 40c of the light guide member 40 are preferably in contact with the lateral surfaces 20c of the light-emitting element 20 at positions near the lower ends (on the side connected to the lower surface 20b) of the lateral surfaces 20c, and are more preferably in contact with the lower ends of the lateral surfaces 20c. Specifically, a region in the range of 75% to 100% from the upper end of each of the lateral surfaces 20c in the height direction of the light-emitting element 20 is preferably covered by the light guide member 40, and a region in the range of 90% to 100% from the upper end of each of the lateral surfaces 20c in the height direction of the light-emitting element 20 is more preferably covered by the light guide member 40.

[0063] The optical component 50 is arranged above the light-emitting element 20, with the light guide component 40 interposed therebetween. As described in the first embodiment, the optical component 50 is a polycrystalline wavelength conversion component containing phosphor particles. The optical component 50 includes, at different positions in the height direction of the lateral surface(s) 50c, the first region 51 where the surfaces of phosphor particles are exposed and the second region 52 where the cross sections of phosphor particles are exposed. Details of the first region 51 and the second region 52 are the same as those described in the first embodiment.

[0064] The first surface 50a of the optical component 50 forms part of the upper surface of the light-emitting device 1 and serves as a light-extracting surface of the light-emitting device 1. The light-guiding component 40 is arranged on the upper surface 20a of the light-emitting element 20, and the optical component 50 is arranged above the light-emitting element 20, with the light-guiding component 40 being arranged therebetween such that the second surface 50b of the optical component 50 faces the upper surface 20a of the light-emitting element 20. The optical component 50 is arranged such that the second surface 50b of the optical component 50 is substantially parallel to the upper surface 20a of the light-emitting element 20. The shape of the second surface 50b of the optical component 50 is preferably similar to the shape of the upper surface 20a of the light-emitting element 20.For example, if the upper surface 20a of the light-emitting element 20 has a rectangular shape, the second surface 50b of the optical component 50 preferably has a rectangular shape.

[0065] The area of ​​the second surface 50b of the optical component 50 is preferably larger than the area of ​​the upper surface 20a of the light-emitting element 20. Furthermore, the optical component 50 is preferably arranged to surround the outer periphery of the light-emitting element 20 in a plan view. Furthermore, in the light-emitting device 1, the light guide member 40, which is arranged between the second surface 50b of the optical component 50 and the upper surface 20a of the light-emitting element 20, preferably covers a portion of the second surface 50b of the optical component 50 that does not overlap with the upper surface 20a of the light-emitting element 20 in a plan view.Furthermore, in the light-emitting device 1, the light guide member 40 preferably extends to the outer edge of the second surface 50b of the optical component 50, and the entire second surface 50b is preferably covered by the light guide member 40. Accordingly, a larger area of ​​light emitted from the light-emitting element 20 can be incident on the second surface 50b of the optical component 50 through the light guide member 40.

[0066] The cover member 60 is provided on the wiring substrate 10 and covers the lateral surfaces 50c of the optical component 50 and the lateral surfaces 20c of the light-emitting element 20 such that the first surface 50a of the optical component 50 is exposed from the cover member 60. The cover member 60 may directly cover the lateral surfaces 20c of the light-emitting element 20, or it may cover the lateral surfaces 20c of the light-emitting element 20 via another member, such as the light guide member 40. Further, the cover member 60 preferably covers the upper surface, the lower surface, and the lateral surfaces of the protective member 30 when the light-emitting device 1 includes the protective member 30.Further, the cover member 60 may cover a portion of the lateral surfaces 20c of the light-emitting element 20 exposed from the light guide member 40 and may cover the bottom surface 20b of the light-emitting element 20.

[0067] With the cover member 60 covering the lateral surfaces 40c of the light guide member 40, light emitted from the lateral surfaces 20c of the light-emitting element 20 and transmitted through the light guide member 40 is reflected by the cover member 60. Furthermore, by causing the cover member 60 to cover the bottom surface 20b of the light-emitting element 20, light traveling below the light-emitting element 20 is reflected by the cover member 60. Accordingly, the light extraction efficiency of the light-emitting device 1 can be improved.

[0068] The cover component 60 may consist of one component or it may consist of a plurality of components. In the Fig. 7 and Fig. In the example shown in Figure 8, the cover member 60 includes a first cover member 61 and a second cover member 62. The first cover member 61 is disposed, for example, on the wiring substrate 10 and covers at least a portion of the lower surface 20b of the light-emitting element 20 and at least a portion of at least one of the lateral surfaces 40c of the light guide member 40. When the light-emitting device 1 includes the protective element 30, the first cover member 61 covers, for example, at least a portion of the lower surface and at least a portion of at least one of the lateral surfaces of the protective element 30.

[0069] The second cover component 62 is arranged, for example, on the first cover component 61 and covers the lateral surfaces of the optical component 50. If the light-emitting device 1 includes the protective element 30, the second cover component 62 covers, for example, the upper surface of the protective element 30. The second cover component 62 can cover portions of the lateral surfaces of the optical component 50 and portions of the lateral surfaces of the protective element 30.

[0070] The lateral surfaces of the second cover member 62 and the lateral surfaces of a base 11 of the wiring substrate 10 form the lateral surfaces of the light-emitting device 1. Some lateral surfaces of the second cover member 62 may, for example, be coplanar with respective lateral surfaces of the base 11. Furthermore, the upper surface of the second cover member 62 may, for example, be coplanar with the first surface 50a of the optical component 50.

[0071] As described above, in the light-emitting device 1, the optical component 50 includes, at different positions in the height direction of the lateral surface(s) 50c, the first region 51 where the surfaces of phosphor particles are exposed and the second region 52 where the cross sections of phosphor particles are exposed. The surface roughness of the first region 51 is greater than the surface roughness of the second region 52. Therefore, when the cover member 60 is in contact with the first region 51 of the optical component 50, the adhesion between the cover member 60 and the optical component 50 can be improved.

[0072] Components of the light-emitting device 1 according to the embodiment will be described in detail below. Wiring substrate 10

[0073] The wiring substrate 10 is a component on which the light-emitting element 20 is disposed. The wiring substrate 10 includes wiring for supplying the light-emitting element with external power and includes a base 11 that supports the wiring. In one example, the wiring substrate 10 includes an upper wiring 12 and a lower wiring 13. The upper wiring 12 is located on an upper surface of the wiring substrate 10 on which the light-emitting element 20 is disposed, and the lower wiring 13 is located on a lower surface of the wiring substrate 10 opposite the upper surface thereof. The base 11 has, for example, a substantially rectangular parallelepiped shape. The base 11 is preferably formed of an insulating material through which light emitted from the light-emitting element 20 or external light or the like is not easily transmitted.Examples of the material of the base 11 include ceramics such as alumina, aluminum nitride, silicon nitride, and mullite; resins such as epoxy resins, silicone resins, modified epoxy resins, urethane resins, phenolic resins, polyimide resins, bismaleimide triazine (BT) resins, and polyphthalamide; semiconductors such as silicon; single metal materials such as copper and aluminum; and composite materials of these. Of these, a ceramic having good heat dissipation properties can be suitably used as the material of the base 11.

[0074] The upper wiring 12 includes wiring electrically connected to the light-emitting element 20 and wiring electrically connected to the protection element 30. The lower wiring 13 includes an external connection terminal electrically connected to an external power source. Examples of the material of each of the upper wiring 12 and the lower wiring 13 include metals such as iron, copper, nickel, aluminum, gold, silver, platinum, titanium, tungsten, and palladium, as well as an alloy containing at least one of these metals. Further, the wiring substrate 10 may include intermediate wiring for connecting the upper wiring 12 and the lower wiring 13. The intermediate wiring may be provided within the base 11 or on a lateral surface of the base 11.

[0075] The wiring substrate 10 does not necessarily include the lower wiring 13. In this case, the external connection terminal electrically connected to the external power source may be provided on the upper surface or a lateral surface of the wiring substrate 10.

[0076] The light-emitting device 1 may have a configuration in which the wiring substrate 10 has a recess in the upper surface thereof, and the light-emitting element 20 is arranged at the bottom of the recess of the wiring substrate 10. The light-emitting device 1 may have a configuration in which the wiring substrate 10 is not included. For example, the light-emitting device 1 may have a configuration in which a metal member exposed from the cover member 60 covering the lower surface 20b of the light-emitting element 20 is included as an electrode of the light-emitting device 1. Light-emitting element 20

[0077] A semiconductor light-emitting element, such as a light-emitting diode (LED) or a semiconductor laser diode (LD) chip, can be suitably used as the light-emitting element 20. The light-emitting element 20 can have any suitable shape, size, and the like. The light-emitting element 20 includes, for example, a plurality of electrodes 25 on the lower surface 20b. The light-emitting element 20 is arranged on the wiring substrate 10. The light-emitting element 20 is flip-chip mounted on the wiring substrate 10 such that the lower surface 20b on which the electrodes 25 are provided faces, for example, the wiring substrate 10. The plurality of electrodes 25 of the light-emitting element 20 are electrically connected to the upper wiring 12. The plurality of electrodes 25 of the light-emitting element 20 can be formed using a known component, such aseutectic solder, conductive paste or bumps, to the upper wiring 12.

[0078] The light-emitting element 20 includes, for example, a semiconductor structure and a support substrate supporting the semiconductor structure. The semiconductor structure includes an n-side semiconductor layer, a p-side semiconductor layer, and an active layer located between the n-side semiconductor layer and the p-side semiconductor layer. The active layer may have a single quantum well (SQW) structure or a multiple quantum well (MQW) structure containing a plurality of well layers. The semiconductor structure includes a plurality of semiconductor layers formed from nitride semiconductors. Examples of the nitride semiconductors include semiconductors of any composition represented by the chemical formula In x Al y Ga 1-x-yN (0 ≤ x, 0 ≤ y, x + y ≤ 1), where the composition ratio of x and y varies within these ranges. The peak emission wavelength of the active layer can be suitably selected according to the purpose. The active layer is configured to emit, for example, visible light or ultraviolet light.

[0079] In the light-emitting element 20, a single semiconductor structure may be arranged on a single support substrate, or a plurality of semiconductor stacks may be arranged on a single support substrate. A single semiconductor structure may include a single light-emitting layer or may include a plurality of light-emitting layers. A semiconductor structure including a plurality of light-emitting layers may be a structure in which a plurality of active layers are located between a single n-side semiconductor layer and a single p-side semiconductor layer, or may be a structure in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are repeatedly multi-layered.

[0080] In the light-emitting element 20, the plurality of electrodes 25 are arranged on a semiconductor structure. The electrodes 25 include an n-electrode connected to an n-side semiconductor layer and a p-electrode connected to a p-side semiconductor layer. The p-electrode and the n-electrode can be arranged on different surfaces or on the same surface of a semiconductor stack. In this example, the plurality of electrodes 25, including the p-electrode and the n-electrode, are arranged on the same surface of the semiconductor structure. A surface of the semiconductor structure on which the plurality of electrodes 25 are arranged forms the lower surface 20b of the light-emitting element 20, and a surface of the support substrate opposite a surface thereof on which the semiconductor structure is arranged forms the upper surface 20a of the light-emitting element 20.An insulating substrate, such as sapphire or spinel (MgAl2O4), or a nitride-based semiconductor substrate, such as gallium nitride, can be used as the support base. The support substrate may preferably be formed of a light-transmitting material to extract the light emitted from the active layer through the support substrate. The light-emitting element 20 does not necessarily have to include the support substrate. In this case, the surface of the semiconductor structure opposite the surface thereof on which the electrodes are arranged forms the upper surface 20a of the light-emitting element 20. Protective element 30

[0081] The light-emitting device 1 may include the protective element 30. The protective element 30 is a component for improving electrostatic resistance. The protective element 30 is, for example, a Zener diode. The protective element 30 is arranged on the wiring substrate 10. Light guide component 40

[0082] The light guide member 40 is a member that causes light emitted from the light-emitting element 20 to travel to the optical component 50. The light guide member 40 covers the lateral surfaces of the light-emitting element 20, thereby allowing light emitted from the lateral surfaces of the light-emitting element 20 to easily travel to the optical component 50. Accordingly, the light extraction efficiency of the light-emitting device 1 can be improved. Furthermore, the light guide member 40 can be used as an adhesive member that bonds the light-emitting element 20 and the optical component 50 to each other.

[0083] The light guide member 40 is arranged to cover the upper surface 20a and each of the lateral surfaces 20c of the light-emitting element 20. The light guide member 40, which covers the lateral surfaces 20c of the light-emitting element 20, can be formed by causing an uncured adhesive resin, which is to bond the optical component 50 and the light-emitting element 20, to become wet and spread over the lateral surfaces 20c of the light-emitting element 20, and then curing the adhesive resin. Examples of the adhesive resin that serves as the light guide member 40 after curing include a light-transmitting resin. Examples of the light-transmitting resin include thermosetting resins such as epoxy resins, modified epoxy resins, silicone resins, and modified silicone resins.Of these, a silicone resin having high heat resistance can be suitably used. The light guide member 40 may include a light diffusing member and a phosphor, which will be described later. Alternatively, the light-emitting element 20 and the optical component 50 may be directly bonded to each other without using an adhesive resin such as the light guide member 40. In this case, the light-emitting device 1 does not necessarily include the light guide member 40. Cover component 60

[0084] The cover member 60 preferably has a light-shielding property. In particular, the cover member 60 preferably has light reflectivity and / or light absorption. The cover member 60 preferably contains a material that can appropriately reflect light emitted from the light-emitting element 20. For example, the cover member 60 preferably has a reflectivity of 60% or more, and more preferably has a reflectivity of 70% or more, 80% or more, or 90% or more with respect to light emitted from the light-emitting element 20.

[0085] An insulating material is preferably used for the cover member 60. The cover member 60 is a member formed of a light-transmitting resin containing particles of a light-reflecting substance. Examples of the resin used for the cover member 60 include a resin containing one or more of a silicone resin, a modified silicone resin, an epoxy resin, a modified epoxy resin, a urea resin, an acrylic resin, a phenolic resin, a bismaleimide triazine resin, and a polyphthalamide resin, as well as a hybrid resin of two or more of these resins. Of these, a silicone resin that has good light resistance, heat resistance, electrical insulation, and flexibility is preferably used.Examples of the light-reflecting substance include titanium oxide, silicon oxide, aluminum oxide, zirconium oxide, magnesium oxide, potassium titanate, barium titanate, zinc oxide, silicon nitride, aluminum nitride, boron nitride, calcium carbonate, calcium hydroxide, calcium silicate, and a combination thereof. Of these, titanium oxide, which has a relatively high refractive index, is preferably used in consideration of light reflection.

[0086] As described above, the cover member 60 may include the first cover member 61 and the second cover member 62. In this case, each of the first cover member 61 and the second cover member 62 may be formed of a material selected from the above materials illustrated as the material of the cover member 60. For example, when the cover member 60 includes the first cover member 61 and the second cover member 62, a material with high mechanical strength may be used for the second cover member 62 forming the outer surface of the light-emitting device 1, and a material with low elasticity and small linear expansion may be used for the first cover member 61 covering the bottom surface 20b of the light-emitting element 20, thus allowing stress caused by resin expansion to be reduced. Operation of the light-emitting device 1

[0087] In the light-emitting device 1, the light-emitting element 20 emits light when supplied with an electric current from the external power source. Of the light emitted from the light-emitting element 20, light traveling upward (i.e., toward the lower surface of the optical component) is extracted to the outside of the light-emitting device 1 through the light guide member 40 and the optical component 50. Further, of the light emitted from the light-emitting element 20, light traveling downward is reflected by the cover member 60 and the wiring substrate 10 and extracted to the outside of the light-emitting device 1 through the light guide member 40 and the optical component 50.Further, of the light emitted from the light-emitting element 20, light traveling in the lateral direction is reflected from the interface between a lateral surface 40c of the light guide member 40 and the cover member 60 and extracted to the outside of the light-emitting device 1 through the light guide member 40 and the optical member 50.

[0088] As described above, the optical component 50 in the light-emitting device 1 includes, at different positions on the lateral surface(s) 50c in the height direction of the lateral surface(s) 50c, the first region 51 where the surfaces of phosphor particles are exposed and the second region 52 where the cross sections of phosphor particles are exposed. The surface roughness of the first region 51 is greater than the surface roughness of the second region 52. Therefore, when the cover member 60 is in contact with the first region 51 of the optical component 50, the adhesion between the cover member 60 and the optical component 50 can be improved. In particular, the first region 51 is continuous with the upper surface of the optical component 50, which serves as the light-emitting surface of the light-emitting device 1.Therefore, separation at the interface between the optical member 50 and the cover member 60, that is, separation at the light-emitting surface of the light-emitting device 1 can be prevented, and thus the reliability of the light-emitting device 1 can be improved. Examples

[0089] Examples are described in detail below; however, the present invention is not limited to these examples.

[0090] In Example 1, a polycrystalline wavelength conversion device A containing phosphor particles was provided. The wavelength conversion device A was a sintered body containing yttrium aluminum garnet (YAG) as a phosphor, which has a particle size of 2 µm to 4 µm, and yttrium aluminum perovskite (YAP) as an inorganic scattering material, which has a particle size of 1.5 µm to 2.5 µm, and was processed into a wafer shape having a thickness of approximately 180 µm. Laser light was then focused within the wavelength conversion device A to form modified regions within the wavelength conversion device A. The wavelength conversion device A was then pressed and cleaved, with the modified regions serving as starting points.

[0091] In Example 2, a polycrystalline wavelength conversion device B containing phosphor particles was prepared. The wavelength conversion device B was a sintered body containing YAG as a phosphor with a particle size of 8 µm to 15 µm and alumina as an inorganic scattering material with a particle size of 5 µm to 10 µm, and was machined into a wafer shape with a thickness of approximately 160 µm. Laser light was then focused within the wavelength conversion device B to form modified regions within the wavelength conversion device B. The wavelength conversion device B was then pressed and cleaved, with the modified regions serving as starting points.

[0092] Subsequently, the lateral surfaces of five samples of each of the split wavelength conversion components A and B were observed with a microscope, and the arithmetic average height Sa and the arithmetic average roughness Ra of the lateral surfaces of each of the samples were measured. The observation of the lateral surfaces and the measurement of Sa and Ra were performed using a VK-X200 laser scanning microscope (manufactured by Keyence Corporation).

[0093] By observing the lateral surface of each of the samples of wavelength conversion devices A and B with the laser microscope, a first region where the surfaces of phosphor particles were exposed and a second region where the cross sections of phosphor particles were exposed were confirmed at different positions in the height direction on the lateral surface of each of the samples. Examples of the observation results are shown in Fig. 9 shown. Fig. 9 is a laser microscopic view of a portion of the lateral surface of a sample of the wavelength conversion component A and a laser microscopic view of a portion of a lateral surface of a sample of the wavelength conversion component B. As in Fig. 9, a first region having a large surface roughness can be confirmed on the lower side, and a second region having a small surface roughness can be confirmed on the upper side of each of the microscopic views of the wavelength conversion devices A and B.

[0094] Fig.Figure 10 shows the measurement results of Sa and Ra on the lateral surfaces of the wavelength conversion components. For the five samples of wavelength conversion component A, the average value of Sa of the first regions was 2.41 µm, the average value of Sa of the second regions was 0.73 µm, the average value of Ra of the first regions was 2.42 µm, and the average value of Ra of the second regions was 0.75 µm. For the five samples of wavelength conversion component B, the average value of Sa of the first regions was 1.85 µm, the average value of Sa of the second regions was 0.82 µm, the average value of Ra of the first regions was 1.34 µm, and the average value of Ra of the second regions was 0.82 µm.

[0095] From Examples 1 and 2, it was confirmed that the surface roughness of the first regions was greater than the surface roughness of the second regions, although the surface roughness of the first regions and the surface roughness of the second regions differ according to the types of phosphors and scattering materials included in the wavelength conversion elements. Accordingly, when a wavelength conversion element is used in a light-emitting device or the like and is covered by a covering element such as a resin, it is believed that the covering element, which is in contact with a first region of the wavelength conversion element, allows for improved adhesion between the covering element and the wavelength conversion element.

[0096] According to an embodiment of the present disclosure, a method for manufacturing an optical component having good adhesion to a cover component can be provided.

[0097] Although embodiments have been described in detail above, the above-described embodiments are non-limiting examples, and various modifications and substitutions may be made to the above-described embodiments without departing from the scope described in the claims. QUOTES CONTAINED IN THE DESCRIPTION

[0000] This list of documents submitted by the applicant was generated automatically and is included solely for the convenience of the reader. This list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions. Cited patent literature

[0000] JP 2023-121810

[0001] JP 2024-034603

[0001] JP 2018-97060

[0003]

Claims

[1] A method for manufacturing an optical component, the method comprising: Providing a polycrystalline wavelength conversion device comprising phosphor particles and having a first surface and a second surface opposite the first surface; Forming a modified region within the wavelength conversion component by focusing laser light within the wavelength conversion component; and Splitting the wavelength conversion component, wherein the modified region is a starting point, comprising pressing the wavelength conversion component from a first surface side. [2] A method for manufacturing the optical component according to claim 1, wherein, in the step of cleaving the wavelength conversion component, a support member is disposed on the second surface of the wavelength conversion component, and the wavelength conversion component is pressed from the first surface side by a pressing member. [3] A method for manufacturing the optical component according to claim 2, wherein, in the step of splitting the wavelength conversion component, the support component is elastically deformed by pressing the wavelength conversion component. [4] A method for manufacturing the optical component according to any one of claims 1 to 3, wherein, in the step of forming the modified region, the modified region is formed at a position spaced apart from the first surface and the second surface. [5] A method for manufacturing the optical component according to any one of claims 1 to 4, wherein, in the step of forming the modified region, the modified region is formed in a region having a depth of greater than 0 and 10 µm or less from the second surface of the wavelength conversion component. [6] A method for manufacturing the optical component according to any one of claims 1 to 5, wherein a length of the modified region in a depth direction of the wavelength conversion component is 2% or more and 30% or less of a thickness of the wavelength conversion component. [7] A method for manufacturing the optical component according to any one of claims 1 to 6, wherein a width of the modified region in a direction parallel to the second surface of the wavelength conversion component is 1 µm or more and 10 µm or less. [8] A method for manufacturing the optical component according to any one of claims 1 to 7, wherein: in the step of forming the modified region, the modified region is formed in a linear shape in a plan view, and in the step of splitting the wavelength conversion member, the wavelength conversion member is pressed along the linearly shaped modified region. [9] A light-emitting device comprising: a light-emitting element; an optical component arranged above the light-emitting element and having a plate shape; and a cover member covering lateral surfaces of the optical member and lateral surfaces of the light-emitting element, wherein: an upper surface of the optical component is exposed from the cover component, the optical component is a polycrystalline wavelength conversion component comprising phosphor particles, where the optical component contains: a first region where surfaces of phosphor particles are exposed, and a second region where cross-sections of phosphor particles are exposed, and the first region and the second region are located at different positions on a lateral surface of the wavelength conversion component in a height direction thereof. [10] The light-emitting device according to claim 9, wherein a surface roughness of the first region is greater than a surface roughness of the second region. [11] A light-emitting device according to claim 10, wherein an arithmetic average surface roughness Ra of the first region is 2.0 µm or more and 3.0 µm or less, and an arithmetic average surface roughness Ra of the second region is 0.5 µm or more and 1.0 µm or less. [12] The light-emitting device according to any one of claims 9 to 11, wherein the first region is provided over all of the lateral surfaces of the optical component along outer edges of a lower surface of the optical component.

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