Process chamber and device for gas phase deposition of a semiconductor layer on a substrate

Abstract

The invention relates to a process chamber (3) for the gas-phase deposition of a semiconductor layer, preferably a silicon layer, on a substrate (1), comprising a support system (2) for simultaneously receiving several substrates (1), a device for introducing process gases (6) into the process chamber (3), and a stationary heating system (4) for radiatively heating the support system (2) and / or the substrates (1) arranged on the support system (2). The invention is characterized in that the heating system (4) has a heating surface (5) which is essentially only exposed to one surface side of the support system (2) and / or the substrates (1), in particular the back side. The invention also relates to a device for the gas-phase deposition of a semiconductor layer, in particular a silicon layer, on a substrate (1).

Description

[0001] The invention relates to a process chamber for the gas-phase deposition of a semiconductor layer, preferably a silicon layer, on a substrate, comprising a support system for simultaneously receiving several substrates, a device for introducing process gases into the process chamber, and a heating system for radiatively heating the support system and / or the substrates arranged on the support system. The invention further relates to a device for the gas-phase deposition of a semiconductor layer, preferably a silicon layer, on a substrate according to claim 19.

[0002] For large-area electronic components, such as large-area lighting elements or photovoltaic cells, but also for mass-produced products like semiconductor diodes, there is a need for cost-effective semiconductor wafers with high crystal quality, since in the case of such components, the material costs of the semiconductor wafer represent a considerable percentage of the total product cost. Methods for manufacturing semiconductor wafers are known in which wafers are produced from silicon blocks ("ingots") using a sawing process. This method makes it possible to produce high-quality, especially monocrystalline, semiconductor wafers. However, the production costs are high, partly due to material loss during the sawing of the silicon blocks.

[0003] Therefore, alternative processes were developed in which a wafer layer is deposited onto a substrate and then detached from the seed substrate. The detached wafer layer thus forms the semiconductor layer for the production of the electronic component. Substrate carriers are used to hold substrates, for example, for depositing semiconductor layers onto a seed substrate. The seed substrates are arranged on the substrate carrier. The substrate carrier is then moved into a process position within a process chamber, for example, by means of a process chamber guide.

[0004] US Patent 2018 / 0245217 A1 discloses a high-throughput deposition device comprising a process chamber, multiple targets forming a first closed control loop within the process chamber (the first closed control loop having a long dimension defined by at least one first pair of targets and a short dimension defined by at least one second pair of targets), a first substrate support arrangement capable of holding one or more substrates configured to receive a deposition material from the plurality of targets in the first closed control loop, and a transport mechanism capable of moving the first substrate support arrangement along an axial direction through the first closed control loop in the first process chamber. The substrates are heated on both sides within the process chamber.

[0005] Uniform heating of the substrates is essential for the growth of the semiconductor layer. Heating multiple substrates on a single support, as is currently the case, has the disadvantage that the temperature and heat distribution on the surface of the substrate, where the semiconductor layer is to be deposited, is not as uniform as desired. Furthermore, it is even more difficult to set the correct temperature and / or to maintain the correct temperature during the process. In particular, the heating system itself influences the temperature distribution, as do the support and the elements used to hold the substrate on the support.

[0006] The present invention is therefore based on the objective of creating a simple and quick way to increase the uniformity of heat distribution on the substrate over a large area. Furthermore, it is an objective of the present invention to allow for the targeted control of the substrate heating.

[0007] These and other problems are solved by a process chamber for the gas phase deposition of a semiconductor layer, preferably a silicon layer, on a substrate according to claim 1 and a device for the gas phase deposition of a semiconductor layer, preferably a silicon layer, on a substrate according to claim 19.

[0008] Advantageous embodiments of the process chamber are described in claims 2 to 18.

[0009] The process chamber for the gas phase deposition of a semiconductor layer, preferably a silicon layer, on a substrate, comprises a support system for simultaneously receiving several substrates, a device for introducing process gases into the process chamber and a heating system for radiative heating of the support system and / or the substrates arranged on the support system.

[0010] The invention is characterized by the features that the heating system has a heating surface which is essentially only directed towards one surface side of the support system and / or the substrates, in particular the back side.

[0011] Heating the substrates from only one side, especially the back, has the advantage that the heat distribution could be adjusted in a better way, since only one side influences the heating and the heat distribution on the substrates on the support system.

[0012] In a preferred embodiment, the heating surface is heated directly, particularly by means of resistance heating. Direct heating of the heating surface is very efficient and provides a homogeneous heat distribution across the entire surface. Especially with resistance heating, the heating surface must be electrically conductive and temperature-resistant, which allows the use of a wide variety of materials. Furthermore, no other forces, such as the Lorentz force, act upon the heating surface, particularly in a mechanical sense.

[0013] Another preferred embodiment of the process chamber is characterized in that the heating surface is heated inductively, with at least one induction coil being provided for the heating surface. By means of inductive heating, particularly with induction coils, the heating could be adjusted very quickly compared to other methods, such as resistance heating. By adjusting the current for the at least one induction coil, the heating of the heating surface is stopped immediately.

[0014] Preferably, the at least one induction coil is separated from the heating surface only by a short distance. The present invention describes embodiments to avoid an electrical short circuit. In particular, the heating surface is made of graphite, which exhibits good coupling in the inductive field and is therefore easy to heat.

[0015] In a preferred embodiment, the heating surface is formed from at least two heating plate elements arranged vertically one above the other and / or horizontally next to each other. Preferably, the heating plate elements are arranged next to each other in a matrix-like configuration. It is also preferred if the heating surface is formed by more than two heating plate elements. The heating surface could be made from several heating plate elements, which is also more cost-effective.

[0016] Another preferred embodiment is characterized in that an induction coil is assigned to each heating plate element or group of heating plate elements. A one-to-one assignment of induction coil and heating plate elements enables effective control of each heating plate element of the heating surface, so that the heating for each heating plate could be individually adjusted.

[0017] Since controlling a large number of heating plate elements could be challenging, an induction coil could be assigned to a group of heating plate elements, where the group of heating plate elements represents a smaller number of elements compared to the total number of heating plate elements. Furthermore, the overall heating power could be increased by assigning multiple induction coils to a single heating plate element or group of heating plate elements, particularly at the edges of the heating plate elements. Because induction coils cannot be designed to have specific, especially individually adjustable, areas of higher and lower power, a plurality of induction coils assigned to a plurality of heating plate elements allows for heating adjustments to different areas.

[0018] In another embodiment, an induction coil is assigned to all heating plate elements, so that one induction coil serves as a heating device for all heating plate elements. Providing only a few induction coils or at least one induction coil simplifies the control of the heating.

[0019] According to a further preferred embodiment, different distances and / or angles of the heating plate elements to the at least one induction coil are adjustable for each heating plate element or group of heating plate elements. Adjusting the distance and / or angle of the heating plate elements to the at least one induction coil allows for fine-tuning of local heating power by controlling the inductive coupling. By adjusting the distance and / or angle of the heating plate elements to the at least one induction coil, a specific temperature profile, in particular a homogeneous temperature across the entire heating plate element or group of heating plate elements, or across the entire heating surface, can be achieved.Furthermore, a controlled non-uniform temperature profile can be set across the entire heating plate element or a group of heating plate elements. This is useful, for example, to compensate for uneven heat distribution from the substrate due to the reaction chamber design, or for rapid heating of substrates upon entry into the process chamber compared to maintaining a constant temperature at later positions when the substrate moves continuously through the process chamber. Since inductive heating of a surface depends on the distance between the surface and the induction coil, the heating of the heating plate elements can be adjusted very precisely.

[0020] The adjustment of the distances and / or angles of the heating plate elements to the at least one induction coil could be mechanical or electronic. In particular, each heating plate element or group of heating plate elements can have its own mechanism or adjustment unit for setting the distance and / or angle of the heating plate elements to the at least one induction coil. The adjustment mechanism or unit can, for example, include threaded rods or screws and / or an electric motor for moving the threaded rods or screws.

[0021] In a further preferred embodiment, the distance between the heating plate elements and the at least one induction coil is adjustable in the range of 0 mm to 50 mm, preferably in the range of 3 mm to 30 mm, more preferably in the range of 5 mm to 15 mm.

[0022] Preferably, the heating plate elements are arranged on at least one induction coil and / or on a part of the process chamber by means of fastening elements made of a material without electromagnetic coupling, for example, a ceramic material or quartz. Preferably, the part of the process chamber can be an insulating cover between the heating plate elements and the at least one induction coil and / or a frame or housing of the process chamber. This allows for secure and stable mounting of the heating plate elements, while simultaneously enabling modular replacement of the heating plate elements. Manufacturing the fastening elements from a material without electromagnetic coupling reduces temperature effects in the area of ​​coupling by the fastening elements. Temperature setting and temperature distribution could be adjusted more easily.According to a further preferred embodiment, the fastening elements are made of the same material as the heating plate elements. The fastening elements can be constructed as a frame into which the heating plate elements are inserted, or as fastening rods or similar elements to which the heating plate elements are arranged or attached. Preferably, the fastening elements are designed to accommodate the thermal expansion of the heating plate elements.

[0023] Another preferred embodiment is characterized in that the heating plate elements have a thickness profile, in particular that the heating plate elements have a greater thickness. The thickness profile of the heating plate elements also influences the heat distribution and the temperature of the heating plate elements. In particular, the heating plate elements have the thickness profile on the side facing the at least one induction coil, while the side facing the substrates is preferably flat and has no thickness profile.

[0024] In a preferred embodiment, an insulating cover is arranged between the heating plate elements and the at least one induction coil, particularly for thermal and / or electrical insulation of the at least one induction coil from the heating surface or the heating plate elements. The insulating cover prevents short circuits and allows very short distances between the heating plate elements and the at least one induction coil, which increases the overall heating efficiency and could also improve the controllability of the heating.

[0025] Preferably, the insulating cover completely separates the at least one induction coil from the interior of the process chamber. By separating the induction coil from the interior of the process chamber, the induction coil is shielded from a chemically aggressive and reactive environment.

[0026] Alternatively, or preferably additionally, the heating plate elements are attached to the insulating cover.

[0027] Preferably, the heating surface, and in particular the heating plate elements, are arranged in an insulating container, which is preferably made of a semiconductor material, for example silicon carbide. This allows for good insulation of the heating plate elements from the surrounding area within the process chamber.

[0028] Alternatively, or preferably additionally, the heating surface, in particular the heating plate elements, is made of coated graphite. Coated graphite has high electromagnetic coupling and is extremely stable in various environments.

[0029] In a preferred embodiment, the insulating cover is made of quartz glass or a ceramic material. Quartz glass or ceramic materials, such as aluminum oxide (Al₂O₃), have a strong shielding effect against electrical short circuits.

[0030] Preferably, the support system can consist of a flat plate with structures for supporting and / or holding the substrates, for example, pins and / or rods. In a further preferred embodiment, the support system has a grid-like structure, preferably with recesses where the support material is thinner, thereby forming pockets to receive the substrates. In a further preferred embodiment, the grid-like structure of the support has cutouts that leave the back of the substrates, except for the edges, free from support by the support system, so that they can be radiantly heated by the heating elements. The heating of the substrates and the overall efficiency of the heating system are increased because the energy from the radiant heating is absorbed directly by the substrates.Another advantage of this embodiment is that wafer deflection, which is common during heating from one side, does not cause parts of the substrate to lose contact with the support, and therefore does not lead to an inhomogeneous heat transfer from the support to the substrate.

[0031] Alternatively, or preferably additionally, the carrier system for the simultaneous transport of the multiple substrates through the process chamber is movable. In particular, the substrates are transported through the process chamber continuously.

[0032] Preferably, the heating system is a stationary heating system.

[0033] In a further preferred embodiment, the support system and / or the heating surface of the heating system are inclined to a vertical plane, in particular at an angle between 0° and 20°, preferably at an angle between 3° and 10°.

[0034] Preferably, the process chamber includes means for monitoring the temperature of the substrates and / or the heating system, in particular the heating surface. More preferably, the means for monitoring the temperature are configured to monitor individual heating plate elements. The means for monitoring the temperature of the substrates and / or the heating system could be a temperature sensor or temperature-sensitive elements such as resistors or thermal imaging cameras.

[0035] In a further preferred embodiment, the process chamber comprises a control device designed to control the movement of the support system, the device for introducing process gases, and / or the heating system. In particular, the control device is also connected to the means for monitoring the temperature, especially for automatically adjusting the heating system. The temperature could be adjusted very quickly to achieve optimal results regarding the temperature and temperature distribution of the heating surface.

[0036] Alternatively or additionally, multiple induction coils are provided for the heating surface, with the induction coils being individually or group-controllable via the control device. The heating can be adjusted to be more sensitive for specific areas, particularly the edges of the heating surface. A higher energy input is required at the edges of the heating surface to achieve a specific temperature, and especially a uniform temperature, compared to the center of the heating surface.

[0037] Preferably, the spacing of the heating plate elements is adjustable mechanically or electronically via the control device, particularly without opening the process chamber and / or during a deposition process. Adjustments could be made very easily during the deposition process. This allows for a very rapid response to temperature differences and undesirable deviations in heating and temperature distribution.

[0038] The object of the invention is also achieved by a device for the gas-phase deposition of a semiconductor layer, preferably a silicon layer, onto a substrate, comprising a process chamber or a preferred embodiment of the process chamber mentioned above. The device for gas-phase deposition further comprises one or more sources for the necessary process gases, a pumping system, and preferably a means for monitoring the deposition process.

[0039] The advantages of the invention are described by way of example with reference to the embodiments and the figures. It shows: Fig. 1 a first embodiment of a process chamber with resistance heating for the heating surface; Fig. 2a) a second embodiment of a process chamber with inductive heating for the heating surface; Fig. 2b) an excerpt from Fig. 2a); Fig. 3. a section of a view of the heating surface and the heating system; and the Fig. 4a) and Fig. 4b) an embodiment of the support system in a front view and a sectional view.

[0040] In Fig. Figure 1 shows a first embodiment of the process chamber 3. The process chamber 3 has a support system 2 on which several substrates 1 are attached to a front surface 2a of the support system 2. The substrates 1 are received in the process chamber 3 or continuously transported through it by the support system 2. Furthermore, the substrates 1 are exposed to process gases 6 in the process chamber 3, the process gases 6 being introduced into the process chamber via at least one inlet. The process chamber 3 also has a stationary heating system 4 with a heating surface 5 facing the rear surface 2b of the support system 2. In this way, only one surface side of the substrates 1 on the support system 2, which moves along the heating surface 5, is heated by radiation from the heating surface 5. There are various ways to achieve heating by radiation. Fig. 1. The heating surface 5 is heated by resistance heating, which is a type of direct heating of the heating surface 5. For resistance heating, the heating surface 5 is made of a material such as graphite or SiC. Direct resistance heating is very efficient and provides a homogeneous heat distribution over the entire heating surface 5.

[0041] The process chamber 3 with its heating system 4 further includes a sensor 13 for measuring the temperature and temperature distribution of the heating surface 5. Alternatively or additionally, a sensor 13' is provided for measuring the temperature and temperature distribution of the surface of the substrates 1 on the support system 2. A control device 12 could adjust the input current for resistance heating of the heating surface 5 or surfaces 5 depending on the measurements of sensors 13 and 13'.

[0042] In this case, the heating surface 5 consists of a heating plate element 9. However, the heating surface 5 could also consist of more than one heating plate element 9, which can be electrically connected to each other or which can be individually controlled by the control device 12.

[0043] Another embodiment of process chamber 3 is in Fig. 2a shows the generally same structure as the embodiment of Fig. The process chamber 3 has a support system 2 on which substrates 1 are attached at the front. Process gases 6 are directed towards the surface of the substrates 1 on the front 2a of the support system. At the rear 2b of the support system 2, a heating surface 5 of a heating system 4 is arranged within a certain distance to heat the substrates 1 on the support system 2 by radiation.

[0044] Fig. 2a) differs from Fig. 1 in the heating system 4 and, in particular, in the manner of heating the heating surface 5. The heating surface 5 is inductively heated by one or more induction coils 7. An insulating cover 8 is arranged between the heating surface 5 and the induction coils 7 to thermally and electrically isolate the heating surface 5 from the induction coils 7. The insulating cover 8 is preferably made of quartz glass, which has a high resistance to electrical short circuits. The insulating cover 8 separates the induction coils 7 from the interior of the process chamber 3 to prevent contact between the induction coils 7 and the reactive process gases 6. This separation of the induction coils from the interior significantly extends the service life of the induction coils 7, which are very expensive.

[0045] In particular, the insulating cover 8 is composed of several elements, so that the replacement of faulty parts can be carried out easily and quickly.

[0046] The heating surface 5 has a modular design and comprises several heating plate elements 9 arranged in a matrix-like structure. The heating plate elements 9 are preferably made of coated graphite, which exhibits high electromagnetic coupling and is very stable in various environments.

[0047] In Fig. 2b) is a section of heating system 4 from Fig. 2a) shown. The heating plate elements 9 of the heating surface 5 are separated from the induction coils 7 by a distance 10. The distance 10 between the heating surface 5 or the heating plate elements 9 and the induction coils 7 could be adjusted to achieve better and more uniform heating of the substrates 1. In particular, the electromagnetic coupling is very sensitive to the distance 10 between the heating plate elements 9 and the induction coil 7. Therefore, changes in the distance 10 between the heating plate elements 9 and the induction coil 7 allow for fine-tuning of the local heating power by controlling the inductive coupling.

[0048] Furthermore, the angle of the heating plate elements 9 to the induction coils 7 can also be adjusted and set for a specific temperature profile. Generally, the distance 10 is adjustable in the range of 0 mm to 50 mm. Fig. 2b) The lower limit for the distance 10 between the heating plate elements 9 and the induction coils 7 is determined by the thickness of the insulating cover 8. The distance 10 can be changed throughout the entire process, thus avoiding any interruption of the process. In the present embodiment, the change in the distance 10 between the heating plate elements 9 and the induction coil 7 is set and controlled by the control device 12. By reducing the distance 10 between the induction coils 7 and the heating plate elements 9 of the heating surface 5, the inductive coupling can be significantly influenced, leading to a higher temperature of the heating surface 5. Conversely, by increasing the distance 10 between the induction coils 7 and the heating plate elements 9 of the heating surface 5, the temperature of the heating surface 5 decreases.The temperature of the heating surface 5 is very sensitive to the distance 10 between the induction coils 7 and the heating surface 5 or the heating plate elements 9, so that the temperature of the heating surface 5 can be easily adjusted within a certain range.

[0049] The embodiment of Fig. 2a) also includes temperature sensors 13, 13' and a control device 12. In the present embodiment, the temperature sensor 13 monitors the multiple heating plate elements 9 for uniform heat distribution, while the sensor 13' monitors the temperature of the substrates 1 on the carrier system 2. In the event of temperature deviations, the distance 10 between the heating plate elements 9 and the induction coils 7 is automatically changed by the control device 12. Furthermore, the power supply for the induction coils 7 and the transport of the carrier system 2 through the process chamber 3 are also controlled by the control device 12.

[0050] In Fig. 3 is the heating system 4 of Fig. Figure 2a shows a partial direct view. The heating system 4 includes several induction coils 7 arranged side by side. The insulating cover 8 and the heating surface 5 are shown in detail in front of the induction coils 7. The heating surface 5 has several heating plate elements 9 arranged vertically above one another. To the right and left of the shown arrangement of heating plate elements 9, the heating surface 5 has a similar structure (not shown in the figure). The heating surface 5 has a modular design, allowing the heating plate elements 9 to be easily replaced. The heating plate elements 9 are positioned in front of the induction coils 7 by means of fastening elements 14, which are located on the insulating cover 8.Alternatively, the fastening elements 14 could also be attached directly to the induction coils 7 or other parts of the process chamber 3, such as a frame. As in . Fig. As shown in Figure 3, several induction coils 7 are assigned to a group or a plurality of heating plate elements 9. This allows for better adjustment of the heating of the heating surface 5 or the heating plate elements, so that, for example, a uniform temperature distribution is achieved over the entire heating surface 5. Therefore, the distance 10 between the induction coils 7 and the heating plate elements 9 at the outer sides of the heating system 4 can be smaller than the distance 10 in the middle.

[0051] In the Fig. 4a) and Fig. 4b) shows an example of support system 2 in a front view and a sectional view. The front view in Fig. Figure 4a) shows the front face 2a of the support system. The substrates 1 are arranged on the support system 2 in a matrix-like structure with three substrates 1 in a row and three substrates 1 in a column, resulting in a total of nine substrates 1 on the support system 2. Each substrate 1 has a recess 16 in the support system 2. The recesses 16 may have cutouts 17 that leave the back of the substrates 1 uncovered, so that the substrates 1 are supported only at their edges. Additionally, the support system 2 may have fixings on its front face 2a to hold the substrates 1 in the recesses.

[0052] The sectional view in Fig.Figure 4b) additionally shows the heating surface 5 of the heating system 4, which radiates heat to the substrates 1 on the support system 2 using radiation 15. The substrates 1 in the recesses 16 are supported only at their edges from the rear 2b of the support system 2, so that the radiation 15 can be effectively transferred to the substrates 1. This grid structure has the advantage that the substrates 1 are fixed in a secure position, allowing for high energy absorption by the substrates 1. Reference symbol list 1 substrate 2 Carrier system 2a Front 2b reverse 3rd Trial Chamber 4 Heating system 5 Heating surface 6 Process gas 7 Induction coil 8 insulating covers 9 heating plate elements 10 distance 11 frames 12 Control device 13, 13' Sensor 14 fastening elements for heating plate elements 15 Radiation 16 In-depth study 17 Excerpt QUOTES INCLUDED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] US 2018 / 0245217 A1

[0004]

Claims

[1] Process chamber (3) for gas phase deposition of a semiconductor layer, preferably a silicon layer, on a substrate (1), comprising a support system (2) for simultaneously receiving several substrates (1), a device for introducing process gases (6) into the process chamber (3), and a heating system (4) for radiatively heating the support system (2) and / or the substrates (1) arranged on the support system (2), characterized by , that the heating system (4) has a heating surface (5) which is essentially only facing one surface side of the support system (2) and / or the substrates (1), in particular the back side (2b). [2] Trial chamber according to claim 1, characterized by , that the heating surface (5) is heated directly, in particular by means of resistance heating. [3] Process chamber according to claim 1, characterized by , that the heating surface (5) is heated inductively, wherein at least one induction coil (7) is provided for the heating surface (5). [4] Trial chamber according to one of the preceding claims, characterized by , that the heating surface (5) is formed from at least two, preferably a plurality of heating plate elements (9) which are arranged vertically one above the other and / or horizontally next to each other, in particular in a matrix-like arrangement next to each other. [5] Process chamber according to one of claims 3 and 4, characterized by , that an induction coil (7) is assigned to each heating plate element (9) or group of heating plate elements (9) or all heating plate elements (9). [6] Process chamber according to one of claims 3 and 4 and preferably according to claim 5, characterized by , that different distances and / or angles of the heating plate elements (9) to the at least one induction coil (7) are adjustable for each heating plate element (9) or a group of heating plate elements (9). [7] Process chamber (3) according to claim 6, characterized by, that the distance (10) between the heating plate elements (9) and the at least one induction coil (7) is adjustable in the range of 0 mm to 50 mm, preferably in the range of 3 mm to 30 mm, more preferably in the range of 5 mm to 15 mm. [8] Process chamber (3) according to one of claims 3 and 4 and preferably according to one of claims 5 to 7, characterized by , that the heating plate elements (9) are arranged on the at least one induction coil (7) and / or on a part of the process chamber (3) by means of fastening elements (14) which are made of a material without electromagnetic coupling, e.g. a ceramic material or quartz. [9] Process chamber (3) according to one of claims 3 and 4 and preferably according to one of claims 5 to 8, characterized by , that the heating plate elements (9) have a thickness profile, in particular that the heating plate element (9) has a partially greater thickness. [10] Process chamber (3) according to one of claims 3 and 4 and preferably according to one of claims 5 to 9, characterized by , that an insulating cover (8) is arranged between the heating plate elements (9) and the at least one induction coil (7) in particular for the thermal and / or electrical insulation of the at least one induction coil with respect to the heating surface or the heating plate elements (9). [11] Process chamber (3) according to claim 10, characterized by , that the insulating cover (8) completely separates the at least one induction coil (7) from an interior of the process chamber (3) and / or that the heating plate elements (9) are attached to the insulating cover (8). [12] Process chamber (3) according to one of the preceding claims 10 or 11, characterized by, that the insulating cover (8) is made of quartz glass or a ceramic material and / or that the insulating cover (8) is composed of several elements. [13] Process chamber (3) according to any of the preceding claims, characterized by , that the support system (2) has a grid-like structure, preferably consisting of recesses (16) in the support (2) to accommodate the substrates (1), more preferably with recesses (16) having cutouts (17) which leave the back sides of the substrates (1) free and support the substrates (1) only on the back sides of their edges. [14] Process chamber (3) according to any of the preceding claims, characterized by , that the carrier system (2) is movable for the simultaneous transport of the multiple substrates (1) through the process chamber (3). [15] Process chamber (3) according to any of the preceding claims, characterized by, that the process chamber (3) has means for monitoring the temperature of the substrates (1) and / or the heating system (4), in particular the heating surface (5), preferably the individual heating plate elements (9). [16] Process chamber (3) according to any of the preceding claims, characterized by , that the process chamber (3) has a control device (12) designed to control the movement of the carrier system (2), the device for introducing process gases (6) and / or the heating system (4). [17] Process chamber (3) according to claim 16 and at least claim 3, characterized by , that a plurality of induction coils (7) are provided for the heating surface (5), wherein the induction coils (7) can be controlled individually or in groups by means of the control device (12). [18] Process chamber (3) according to claim 17 and at least claim 6, characterized bythat the distance between the heating plates (9) can be adjusted mechanically or electronically by the control device (12), in particular without opening the process chamber (3) and / or during a deposition process. [19] Device for gas phase deposition of a semiconductor layer, in particular a silicon layer on a substrate (1), comprising a process chamber according to one of the preceding claims.

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