Power module bridge with a number of power modules

Abstract

The invention relates to a power module bridge (138) comprising a number of power modules (12) with a first circuit carrier (14) comprising a carrier substrate (40) and a first conductor structure (18) with a first contact region (18.2), at least one second conductor structure (20A, 20B) with at least one external contact region (20A.2, 20B.2), and a further, third conductor structure (22) with an external contact region (22.2). Furthermore, an external contact region (22.2) comprising a first group (64) of semiconductor components and a second group (66) of semiconductor components is provided for the further, third conductor structure (22). A number of power modules (12) are arranged in a multifunctional frame (50) which is designed such that it can be connected to the number of power modules (12), wherein the groups (64, 66) of semiconductor components (42) are arranged in a first plane (40).This is delimited by a second plane (62), wherein the groups (64, 66) of semiconductor components are arranged in a first plane (60), which is spatially separated from the second plane (62) in the multifunctional frame (50). Contact surfaces (68, 70) that contact the groups (64, 66) of semiconductor components (42) are accommodated in this plane. The semiconductor components (42) are electrically connected to one another by a second weld (130) with the introduction of at least one spacer (100) and by a first weld (118) with the introduction of at least one joining partner (114).

Description

Technical area

[0001] The invention relates to a power module having a first circuit carrier comprising a carrier substrate and a first conductor structure with an external contact region, at least one second conductor structure with at least one external contact region and a further, third conductor structure comprising an external contact region, further comprising a first group of semiconductor components and a second group of semiconductor components. State of the art

[0002] In the current state of the art, power modules, for example, those installed in a power module bridge, are additionally molded. During molding, the power module is embedded in a rigid protective housing, for example, made of plastic (molding compound). The molding compound serves to enclose and protect the interior of the power module. However, these molding compound enclosures of the power module are not particularly resistant to cracking.

[0003] From DE 11 2017 004 390 T5 a power module is known which has the following features: an insulating substrate having a front side to which a power semiconductor element is attached; a base plate connected to a back side of the insulating substrate; a housing attached to the base plate and surrounding the insulating substrate; a cover attached to the housing and forming a sealed area; and a silicone gel serving as a filling element which fills the entire sealed area and has an internal stress acting as a compressive stress.

[0004] DE 10 2014 219 998 B4 discloses a power module, particularly for providing a phase current for an electric motor. The power module comprises a circuit carrier having a surface, at least two first contact surfaces on the surface, and at least two first power transistors, each of which has a ground contact surface. A first power transistor of the at least two first power transistors is arranged directly on each of the first contact surfaces and is electrically conductively connected to the respective first contact surface via its ground contact surface. Furthermore, the power module comprises a second contact surface on the surface and at least two second power transistors, each of which has a ground contact surface.The at least two second power transistors are arranged directly on the second contact surface and are electrically connected directly to the second contact surface via their respective ground contact surfaces. Furthermore, the power module comprises at least two third contact surfaces on the surface, wherein the at least two second power transistors each have a further contact surface on their sides facing away from the surface of the circuit carrier, and a second power transistor of the at least two second power transistors is electrically connected to one of the at least two third contact surfaces via its further contact surface.The at least two first contact surfaces and the at least two third contact surfaces are arranged alternately one after the other in a longitudinal direction of the power module, and the second contact surface is arranged next to the at least two first contact surfaces and the at least two third contact surfaces, the second contact surface having at least two contact regions, one of the at least two contact regions being located next to each of the at least two first power transistors. The at least two first power transistors each have a further contact surface on their sides facing away from the surface of the circuit carrier, and a first power transistor of the at least two first power transistors is electrically conductively connected via its further contact surface to the respective contact region of the at least two contact regions of the second contact surface located next to it.Here, the at least two contact regions of the second contact surface and the at least two second power transistors are arranged alternately one after the other in the longitudinal direction.

[0005] EP 2 418 925 B1 discloses an electrical contact between a flexible foil having at least one conductor track and at least one electrical contact of a sensor or control device. An end section of the flexible foil is electrically contacted at a contact point by heat input, with the end section of the flexible foil being positioned against protruding electrical contacts at the contact point. The end section of the flexible foil is designed as a wave pattern, in particular as a deflection element. Disclosure of the invention

[0006] According to the invention, a power module bridge is proposed with a number of power modules and a first circuit carrier, which has a carrier substrate and a first conductor structure with an external contact region, at least one second conductor structure with at least one external contact region and a further, third conductor structure with an external contact region. The further, third conductor structure is provided with an external contact region with a first group of semiconductor components and a second group of semiconductor components, wherein a number of power modules are arranged in a multifunctional frame which is designed such that they can be connected to the number of power modules, wherein the groups of semiconductor components are arranged in a first level which is different from a second level.The groups of semiconductor components are arranged in the first level, which is spatially separated from the second level in the multifunctional frame, in which the groups of semiconductor components contacting contact surfaces are accommodated and the semiconductor components are electrically connected to one another by a second welded connection with the introduction of at least one spacer and by a first welded connection with the introduction of at least one joining partner.

[0007] The solution proposed according to the invention offers the advantage that by combining several power modules, for example via a B6 bridge in the multifunctional frame, a large component is formed, which advantageously offers the possibility of better maintaining tolerances of press-in pins to one another, whereby installation space and thus manufacturing costs can be significantly reduced.

[0008] In an advantageous development of the power module bridge proposed according to the invention, the multifunctional frame is arranged above or below the at least one power module, viewed in the Z direction.

[0009] In an advantageous further development of the power module bridge, current-carrying paths in the multifunctional frame are designed as T+ bridges, T- bridges and as phase bridges arranged one above the other or next to each other with low inductance.

[0010] In the solution proposed according to the invention, it is provided that the contact surfaces in the second level are contacted by means of press-in pins.

[0011] Furthermore, the groups of semiconductor components arranged in the first level of the power module bridge proposed according to the invention are contacted via press-in pins.

[0012] The solution proposed according to the invention in the form of a B6 group comprises in particular three power modules which are connected to a cooling surface by means of a solder connection on their underside.

[0013] In the power modules used according to the invention, the contact surfaces arranged in the second level of the multifunctional frame are further provided with openings which are located above the semiconductor components of the group of semiconductor components arranged in the first level.

[0014] Furthermore, the power module group proposed according to the invention is characterized in that the contact surfaces of the second level are contacted with the semiconductor components arranged in the first level via L-contacts.

[0015] The power module bridge advantageously comprises a first welded connection between the multifunctional frame in the second level and the semiconductor components of the first group of semiconductor components, which is formed within an opening on the joining partner.

[0016] The power module bridge includes a joining partner made of a plastic material.

[0017] Furthermore, in the power module proposed according to the invention, it is provided that the second welded joint comprises a first weld layer, a second weld layer and a third weld layer.

[0018] The power module bridge proposed according to the invention comprises a multifunctional frame in which a number of power modules, preferably forming a B6 bridge, are accommodated in a very small space. Advantages of the invention

[0019] The power module proposed by the invention, or its inventive design, allows active areas and layout areas to be separated from one another. The arrangement of the multifunctional frame proposed by the invention, which is arranged, for example, above the power module, shifts the current flow from the power module to the multifunctional frame arranged above it. This results in improved cooling options for the semiconductor components. These can be transistors, flip-flops, MOSFETs, or the like. The solution proposed by the invention allows for improved cooling because larger distances can be realized between the semiconductor components.The solution proposed by the invention makes it possible to relocate current-carrying paths, such as the T+ bridge and / or T- bridge, into the multifunction frame and to design them there, either stacked or adjacent to each other, with low inductance. In particular, the option of designing the current-carrying paths as low-inductance current paths reduces switching losses.

[0020] The decoupling of the first and second levels in the power module and the multifunctional frame results in a compact design of the power module proposed according to the invention. Furthermore, the selected superimposed arrangement of the two functional levels—namely, the first level, where the semiconductor components are located, and the second level, where the current is carried—significantly improves production and increases the service life of the power module, as its complexity is significantly reduced. Thermomechanical stress in the molding compound can be significantly reduced by making the molded body thinner.

[0021] In particular, when the semiconductor components in the first layer and the current-carrying contact surfaces in the second layer, i.e., within the multifunctional frame, are contacted using press-in pins, a robust electrical connection option for the aforementioned components is achieved. Furthermore, the press-in pin design is technically proven and can be robustly implemented in large-scale production.

[0022] Further following the solution proposed by the invention, the underside of the power module can advantageously be connected to the top side of a cooling surface either by a flat sintered connection, a flat soldered connection, or a flat adhesive connection. All design variants offer the advantage of a flat contact, which allows the waste heat generated during operation of the semiconductor components of the power module to be reliably dissipated and prevents excessive thermal stress on the power module proposed by the invention.

[0023] According to the solution proposed by the invention, the external contact areas of the power module are displaced vertically, i.e. in the Z direction, and provided in the multifunctional frame. This enables spatial decoupling of the semiconductor components from the current-carrying paths or the external contact areas, so that the total available area, i.e. the chip area, can be better utilized or considerably reduced, thereby resulting in significant cost savings. If the T+ bridge and the T- bridge are designed to be coplanar, one above the other, with a minimized distance in the Z direction, the magnetic fields generated by the current flow in these components are canceled out, so that parasitic effects of the current are largely eliminated and a low-inductance connection can be achieved.The solution proposed by the invention significantly simplifies the complexity of the power module and the entire assembly, including the multifunctional frame. By shifting the multifunctional frame in the Z direction, whether above or below the power module, spatial decoupling can be achieved, depending on the available space requirements. The use of press-in pins allows for a standardized interface for signal transmission, as well as for the line contacts. Furthermore, it is possible to arrange the semiconductor components in groups, for example, forming a group with six semiconductor components, or to arrange the number of semiconductor components with 12, 8, or 4, depending on requirements and variants, while maintaining appropriate spacing on the base surface of the power module.The solution proposed by the invention allows very tight tolerances to be maintained for subsequent connection and installation processes. Overall, the reliability of the power module with its associated multifunctional frame can be significantly improved due to the significantly improved heat dissipation, which ultimately benefits its service life. The inductive connection of the semiconductor components allows for very short switching times for the semiconductor components. Short description of the drawings

[0024] Embodiments of the invention are explained in more detail with reference to the drawings and the following description.

[0025] They show: Fig. 1 a plan view of a first circuit carrier of a power module comprising a carrier substrate and an arrangement option for semiconductor switches, Fig. 2 a plan view of a power module with separate cooling and layout areas with laterally arranged areas for press-in pins, Fig. 3 an arrangement of a power module mounted on a cooling surface and a multifunctional frame arranged above it in the Z direction, Fig. 4 a perspective top view of the arrangement according to Fig. 3, Fig. 5 an alternative contacting option for semiconductor components via material-locking connections with an interposition of a copper layer, Fig. 6 a multifunctional frame for a B6 bridge as a compact component, Fig. 7 a variant of the multifunctional frame according to Fig. 6, taken on a cooling surface, Fig. 8 an electrical connection between T-bridge and chip via L-contacts, Fig. 9 an electrical connection between T- bridge and chip via spacer, Fig. 10 and Fig. 11 perspective views of electrical connections made by welding. Embodiments of the invention

[0026] In the following description of the embodiments of the invention, identical or similar elements are designated by the same reference numerals, whereby a repeated description of these elements is omitted in individual cases. The figures only schematically illustrate the subject matter of the invention.

[0027] Fig. 1 shows a plan view of a power module 12, in particular of its first circuit carrier 14.

[0028] The top view according to Fig. 1 shows that a carrier substrate 40 of the first circuit carrier 14 is provided with a number of conductor structures 18, 20A, 20B, 22. The first circuit carrier 14 extends in an X / Y plane 10, wherein the first circuit carrier 14 is provided with an electrical insulation layer 16. A first conductor structure 18, which has an external contact region 18.2, is located on this layer, separated from one another by channel-shaped interruptions. Furthermore, second conductor structures 20A, 20B are located opposite one another on the first circuit carrier 14, symmetrically to a central longitudinal axis 24 of the power module 12. Each of the two second conductor structures 20A, 20B comprises an external contact region 20A.2, 20B.2. Finally, a third conductor structure 22 is applied to the first circuit carrier 14 or to its electrical insulation layer 16, which has at least one external contact area 22.2.

[0029] The aforementioned conductor structures 18, 20A, 20B, 22 are electrically separated from one another and applied to the first circuit carrier 14 essentially symmetrically to the central longitudinal axis 24. Position 36 denotes an active area, and a layout area surrounding this area for conducting current is designated by reference numeral 38. For example, AMB (Active Metal Brazing), which contains OFC (oxygen-free copper) / Si3N4 / OFC, can be selected as the carrier substrate 40 of the first circuit carrier 14.

[0030] According to the illustration Fig. 2 shows a plan view of the power module 12, wherein in this schematic representation semiconductor components 42 are arranged on active surfaces 36, which may be, for example, transistors, MOSFETs or other semiconductor components that can be used as semiconductor switches. Fig. 2 that a first group 64 of semiconductor components 42 is accommodated on the active surfaces 36. The individual semiconductor components 42 can be designed, for example, as MOSFETs and have control terminals 34 on their outer sides, via which a control (not shown in detail) of the individual semiconductor components 42 of the first group 64 of semiconductor components 42 can be carried out. Analogous to the first group 64, a second group 66 of semiconductor components 42 is arranged, which can also be MOSFETs, on the outer region of which control terminals 34 are each formed. The semiconductor components 42 of the second group 66 of semiconductor components 42 can be controlled from the outside via the control terminals 34, although this is not shown in the illustration according to Fig. 2 is not shown in detail.

[0031] Furthermore, the top view according to Fig. 2 shows that in the Fig. 2, areas are provided on the long sides of the first circuit carrier 14 in the form of a carrier substrate 40, in which press-in pins 76 - 94 are inserted into the plane of the drawing according to Fig. 2. In detail, these are first and second press-in pins 76, 78 as well as third and fourth press-in pins 80, 82 and, arranged opposite one another, fifth and sixth press-in pins 84, 86. In the area of ​​the opposite end face of the first circuit carrier 14, seventh and eighth press-in pins 88, 90 are provided as well as ninth and tenth press-in pins 92, 94. The spatial arrangement of the press-in pins 76, 78, 80, 82, 84, 86, 88, 90, 92, 94 is shown in the illustrations according to Fig. 3 and Fig. 4 for more details.

[0032] According to the side view Fig. 3 shows that a power module 12, shown here from the outside, is mounted with its underside 120 on a cooling surface 106. Viewed in the Z direction 54, a first multifunctional frame 50 is located above the power module 12. On the top side of the Fig. In the side view of the first multifunction frame 50 shown in Figure 3, the individual press-in pins 76, 78, 80, 82, 84, 86, 88, 90, 92, 94—here located in the same plane of the drawing—protrude vertically upward. The press-in pins 76-94 allow the components within the multifunction frame 50 or the power module 12 arranged underneath to be electrically contacted in a robust and simple manner.

[0033] Fig. 4 shows a partial perspective view of the top of the Fig. 3 shows the arrangement shown from the side, comprising the first multifunctional frame 50, the power module 12 and the cooling surface 106 arranged underneath.

[0034] Fig. 4 shows that the first group 64 of semiconductor components 42 and the second group 66 of semiconductor components 42 are arranged in a first plane 60 extending substantially at the bottom of the power module 12. The arrangement pattern according to Fig. 4 corresponds essentially to the plan view as shown in Fig. 2. From the illustration according to Fig. 4 shows that essentially flat contact surfaces 68, 70 extend in a second plane 62 extending above the first plane 60. The contact surfaces 68, 70 are preferably T+ bridges 134 or T- bridges 138, which are described in more detail below, as well as a phase bridge 136. While the first contact surface 68 has the third press-in pin 80 and, opposite it, the fourth press-in pin 82, the seventh press-in pin 88 is formed on the second contact surface 70, and the eighth press-in pin 90 is arranged laterally offset from it.

[0035] From the representation according to Fig. 4 further shows that the semiconductor components 42 of the first group 64 and the second group 66 arranged below the second level 62, ie in the first level 60, can be contacted via the press-in pins 84, 86, 92, 90. By means of the Fig. The arrangement or spatial decoupling of the levels 60, 62 shown in Figure 4 allows a compact design and a significant improvement in the cooling of the semiconductor components 42 producing waste heat during operation to be achieved.

[0036] Fig. 4 further shows that the substantially planar contact surfaces 68, 70 are each formed with a number of openings 72, which in the embodiment of the contact surfaces 68, 70 according to Fig. 4 have a rectangular shape 74. As an alternative to the rectangular shape 74, a different geometry, for example square or circular, is of course also conceivable with respect to the geometry of the openings 72. Below the openings 72 formed in the surface of the contact surfaces 68, 70, there is a corresponding semiconductor component 42. This means that the openings 72, which lie in the first plane 60, are aligned with the positions of the semiconductor components 42, which are arranged below in the second plane 62. As further shown in Fig. 4, for example, the semiconductor components 42 of the first group 64 are electrically contacted via L-parts 98. The L-part 98 partially overlaps the edge of the opening 72, extends substantially in the vertical direction to the second level 62 arranged below the first level 60 and there to the semiconductor component 42 positioned below the opening 72. The use of the L-parts 98 as current transmission elements enables a spatial separation in the Z-direction 54, as seen in connection with Fig. 3 indicated.

[0037] The same applies to the semiconductor components 42 of the second group 66 of semiconductor components 42, which are also accommodated in the first level 60 on the base 96 of the power module 12.

[0038] The semiconductor components 42 of the second group 66 are also contacted by L-parts 98, which extend substantially vertically, starting from the second level 62 in the direction of the first level 60, ie in the direction of the bottom 96 of the power module 12. In the Fig. 4, the contact surfaces 68, 70, which run in the second plane 62 within the first multifunctional frame 50 and extend essentially in the vertical direction, ie in the opposite Z direction 54, are therefore contacted with the semiconductor components 42 arranged in the first plane 60 on the bottom 96 of the power module 12.

[0039] Fig. 5 shows an alternative contacting option for the semiconductor components 42. Openings 116 are provided in the first multifunctional frame 50. The openings 116 are covered on the underside of the first multifunctional frame 50 by a joining partner (114), for example, a copper layer. A welded connection 118 is formed on this within a welding region 112, so that the chip arranged beneath the copper layer 114, optionally with the interposition of the spacer 100, i.e., the semiconductor component 42, is electrically contacted. The spacer 100 located beneath the copper layer 114 and the semiconductor component 42 can be enclosed by a molding compound 108 or embedded therein.On the underside 120 of the power module 12, the latter is connected via the sintered connection 104 or via a solder / adhesive connection 110 to a substantially planar cooling surface 106 for dissipating the waste heat generated during operation of the semiconductor components 42.

[0040] In a method according to the invention for producing the power module 12, a first conductor structure 18 with an external contact region 18.2, at least one second conductor structure 20A, 20B with at least one external contact region 20A.2, 20B.2, and a further third conductor structure 22 having an external contact region 22.2 are provided thereon. The first multifunctional frame 50 is assigned to the power module 12; groups 64, 66 of semiconductor components 42 are arranged in a first level 60, which are spatially separated from a second level 62 in the first multifunctional frame 50. Finally, current-carrying contact surfaces 68, 70 that contact the first and second groups 64, 66 of semiconductor components 42 are arranged in the second level 62. The first weld connection 118 is created through the opening 116 in the first multifunctional frame 50, lying in the first level 60.The first welded joint 118 connects the first multifunctional frame 50 to the spacer 100. In addition, in . Fig. 5 shows a further, second welded joint 130. The further, second welded joint 130 comprises a first weld layer 122, a second weld layer 124 and a third weld layer 126, as in Fig. 5. The spacer 100, embedded in the molding compound 108, is connected to the contact surface 102 of the semiconductor component 42 via the second welding layer 124. The first welding layer 122 connects the semiconductor component 42 to the base 96 of the power module 12.

[0041] According to the illustration Fig. 6 shows a perspective top view of a second multifunctional frame 143. In a plane made of a plastic material 132, there are several power modules 12, as shown in Fig. 4 are shown as individual components, next to each other in a surface made of plastic material 132. This creates a continuous surface which is analogous to the representation according to Fig. 4 form a first contact surface 68 and a second contact surface 70, which are arranged one above the other. The advantage of the Fig. The advantage of the second multifunctional frame 143 shown in Figure 6 is that the tolerances of the press-in pins 76, 78, 80, 82, 84, 86, 88, 90, 92, 94 can be better maintained, thereby saving both space and costs. The second multifunctional frame 143 can accommodate a number of first multifunctional frames 50, for example, three in this case.

[0042] Fig. Figure 7 shows a B6 bridge 138 comprising three power modules 12, each with a high-side and a low-side bridge. A cooling surface 106 is located on the underside. The three power modules 12 are attached to the cooling surface 106 by means of a solder joint 110. A second multifunctional frame 143 is integrally joined, preferably welded, to the three power modules 12.

[0043] Fig. Figure 7 shows the second multifunctional frame 143, which houses signal contacts and power contacts. Supply and discharge lines 140, 142 extend beneath the cooling surface 106, supplying a cooling medium to the cooling surface 106 and discharging it again, so that heat dissipation of the heat dissipated by the semiconductor components 42 and the components of the power bridges to the cooling surface 106 can be achieved. The second multifunctional frame 143, together with the cooling surface 106, forms the aforementioned B6 bridge 138. The multifunctional frame 143, thanks to the shared plastic surface 132, can accommodate multiple power modules 12 as a B6 bridge 138.

[0044] According to the illustration Fig. Figure 8 shows an electrical connection option between the first multifunctional frame 50 and the semiconductor components 42. To implement the electrical connections, L-contacts 144 are used, each comprising a leg 146 and a base piece 148 preferably formed at right angles to the leg. Fig. 8 shows, for example, that the T-bridge 135 is connected to the L-contacts 144, which in turn are connected to the top side of the spacer 100 and thus to the semiconductor components 42 via a weld on the base piece 148. The first multifunctional frame 50 forms the aforementioned first level 60, while the power module 12 spans the aforementioned underlying second level 62. The semiconductor components 42 are mounted on the AMB substrate 158, which in turn is connected to the cooling surface 106 via a solder connection 110 and dissipates the heat generated during operation of the semiconductor components 42.

[0045] Fig. 9 shows a further embodiment of an electrical connection between the first multifunctional frame 50 and the semiconductor component 42 with the interposition of the spacer 100. Here, for example, a copper element bent out of the T-bridge 135 is connected to the contact surface 102 of the spacer 100, which in turn is connected to the top side of the semiconductor component 42, by means of the first weld connection 118.

[0046] According to the illustration Fig. 10 shows that the L-contacts 144 are connected to the AMB substrate 158, for example, via a first L-contact connection 150, a second L-contact connection 152 is designed as a welded connection on the upper side of the legs 146 of the L-contacts 144, and finally a third L-contact connection 154 is designed.

[0047] Fig.Finally, Figure 11 shows, instead of using L-shaped contacts, larger-area L-shaped pieces 160, each provided with press-in pins 80, 84, to name just a few examples. Said L-shaped pieces 160 are electrically connected, for example, to film capacitors at weld points 162.

[0048] The invention is not limited to the embodiments described here and the aspects highlighted therein. Rather, numerous modifications are possible within the scope of the claims, which are within the scope of one skilled in the art. QUOTES CONTAINED IN THE DESCRIPTION

[0000] This list of documents submitted by the applicant was generated automatically and is included solely for the convenience of the reader. This list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions. Cited patent literature

[0000] DE 11 2017 004 390 T5

[0003] DE 10 2014 219 998 B4

[0004] EP 2 418 925 B1

[0005]

Claims

[1] Power module bridge (138) with a number of power modules (12) with a first circuit carrier (14) which has a carrier substrate (40) and a first conductor structure (18) with an external contact area (18.2), at least one second conductor structure (20A, 20B) with at least one external contact area (20A.2, 20B.2) and a further, third conductor structure (22) with an external contact area (22.2), with a first group (64) of semiconductor components (42) and a second group (66) of semiconductor components (42), characterized bythat a number of power modules (12) are arranged in a multifunctional frame (50), wherein the multifunctional frame (50) is designed such that it can be connected to the number of power modules (12), wherein the groups (64, 66) of semiconductor components (42) are arranged in a first plane (60) which is different from a second plane (62), wherein the groups (64, 66) of semiconductor components (42) are arranged in the first plane (60) which is spatially separated from the second plane (62) in the multifunctional frame (50), in which plane contacting contact surfaces (68, 70) are accommodated for the groups (64, 66) of semiconductor components (42), wherein the semiconductor components (42) are electrically connected to one another by a second welded joint (130) by introducing at least one spacer (100) and by a first welded joint (118) by introducing at least one joining partner (114) are. [2] Power module bridge (138) according to claim 1, characterized by that the multifunctional frame (50) is arranged above or below the power module (12) as seen in the Z direction (54). [3] Power module bridge (138) according to claims 1 and 2, characterized by that in the multifunctional frame (50) current-carrying paths are designed as a T+ bridge (134), a T- bridge (135) and a phase bridge (136) lying one above the other or next to each other with low inductance. [4] Power module bridge (138) according to claims 1 to 3, characterized by that the contact surfaces (68, 70) in the second plane (62) are contacted by means of press-in pins (80, 82; 88, 96). [5] Power module bridge (138) according to claims 1 to 4, characterized by that the groups (64, 66) of semiconductor components (42) arranged in the first plane (60) are contacted via press-in pins (84, 86; 92, 94). [6] Power module (12) according to claims 1 to 5, characterized bythat the power module (12) is connected with its underside (120) to a cooling surface (106) via a solder connection (110). [7] Power module (12) according to claims 1 to 6, characterized by that the contact surfaces (68, 70) arranged in the second plane (62) of the multifunctional frame (50) have openings (112) which are located above the semiconductor components (42) of the groups (64, 66) of semiconductor components (42) arranged in the first plane (62). [8] Power module bridge (138) according to claim 7, characterized by that the contact surfaces (68, 70) of the second level (62) are contacted with the semiconductor components (42) arranged in the first level (60) via L-contacts (144). [9] Power module bridge (138) according to claims 1 to 8, characterized bythat a first welded connection (118) is made within an opening (116) on the joining partner (114) between the multifunctional frame (50) in the second plane (62) and the semiconductor components (42) of the first group (64) of semiconductor components (42). [10] Power module bridge (138) according to claims 1 to 9, characterized by that the joining partner (114) comprises a plastic material (132). [11] Power module bridge (138) according to claims 1 to 10, characterized by that the second weld joint (130) comprises a first weld layer (122), a second weld layer (124) and a third weld layer (126). [12] Power module bridge (138) according to one of claims 1 to 11, characterized by that several power modules (12) representing a B6 bridge are accommodated within the multifunctional frame (50). [13] Power module bridge (138) according to one of claims 1 to 12, characterized bythat several first multifunctional frames (50) are embedded in a common second multifunctional frame (143) enclosing them. [14] Power module bridge (138) according to one of claims 1 to 13, characterized by that a plurality of first multifunctional frames (50) are accommodated within the second multifunctional frame (143), the semiconductor components (42) or groups of semiconductor components (64, 66) of which are electrically contacted via bent-out tabs of a T-bridge (135).

Images