Sensor device with pressure sensor, method for detecting a pressure change and projection exposure system

Abstract

The invention relates to a sensor device (100) comprising at least one line (101) through which a fluid (114) flows from a fluid source, and comprising at least one pressure and / or vibration sensor (102) for detecting a pressure and / or a temporal change in displacement within and along the line (101). The pressure and / or vibration sensor (102) is designed as a capacitive sensor comprising an elastic dielectric (105) arranged between at least two electrodes (103, 104). The invention further relates to a compensation device, a method for detecting a pressure or temporal path change, a projection exposure system and a lithography system, an inspection system and a coordinate measuring machine.

Description

[0001] The invention relates to a sensor device comprising at least one line through which a fluid flows from a fluid source, and comprising at least one pressure and / or vibration sensor for detecting a pressure and / or temporal displacement change within or on the line. Furthermore, the invention relates to a compensation device, a method for detecting a pressure and / or temporal displacement change, a projection exposure system, a lithography system, an inspection system, and a coordinate measuring machine.

[0002] Projection exposure systems are used to create extremely fine structures, particularly on semiconductor devices or other microstructured components. The operating principle of these systems is based on creating extremely fine structures down to the nanometer range by means of a generally reduced-size image of structures on a mask, a so-called reticle, on an element to be structured, a so-called wafer, which is provided with photosensitive material. The minimum dimensions of the created structures depend directly on the wavelength of the light used. This light is shaped in an illumination optics for optimal illumination of the reticle. Recently, light sources with an emission wavelength in the range of a few nanometers, for example between 1 nm and 120 nm, particularly in the range of 13.5 nm, have been increasingly used. This wavelength range is also referred to as the EUV range.

[0003] In addition to systems operating in the EUV range, the microstructured components are also manufactured using the market-established DUV systems with a wavelength between 100 nm and 400 nm, particularly 193 nm. With the demand for ever smaller structures, the requirements for optical correction in the systems have also increased. With each new generation of projection exposure systems operating in the EUV or DUV range, throughput is increased to increase cost-effectiveness.

[0004] Lithography systems, particularly microlithographic projection exposure systems, experience heat input during operation due to partial absorption of incoming light in the EUV or DUV wavelength range. One option for reducing heat input is to temperature-control, particularly cooling, the optical elements or the objects of the lithography system using temperature control lines. A fluid originating from a fluid source flows through the temperature control line, which is preferably designed as a cooling line.

[0005] Such tempered or cooled objects can experience and transmit vibration excitation due to the coolant flowing through the pipe.

[0006] Patent DE10 2021 210 470 B3 proposes an active control system for suppressing acoustic waves or pressure waves in the coolant. For this purpose, the pressure waves transported to the optical element are detected, and a further pressure wave is introduced via a corresponding controller and actuator in such a way that destructive interference occurs at the location of the vibration-sensitive component, thus reducing vibration excitation. A pressure measuring device that measures frequency, phase, and amplitude with high precision is required to detect the acoustic waves transported in the coolant.

[0007] Pressure sensors that are installed in the line or are in contact with the coolant in the line are known from the prior art. These pressure sensors essentially comprise a chamber that is connected in series in the coolant line and equipped with a diaphragm pressure sensor. The diaphragm is adjacent to the coolant flowing inside the chamber. This abruptly increases the flow cross-section in the line for the diaphragm, which can create eddies and turbulent flows, as well as flow deflections, which in turn can transmit vibrations to the object.

[0008] A less invasive option for flow control is to integrate the pressure sensor into a branch of the line. However, the pressure change detected this way may be delayed or deviate from that measured in the main line. Furthermore, air bubbles can become trapped in the branch, for example, during filling. Air bubbles distort the stiffness and damping of the fluid volume, thus disrupting the system behavior and the effective sensitivity of the sensor.

[0009] The article "Hydrogel Microphones for Stealthy Underwater Listening" by Yang Gao et al. (Nature Comm. 7:12316, 2016) proposes the use of hydrogel microphones to record signals underwater.

[0010] It is therefore the object of the present invention to provide a sensor device, a compensation device, a method for detecting a pressure and / or temporal path change, a projection exposure system, a lithography system, an inspection system and a coordinate measuring machine, in which the above-mentioned disadvantages are overcome or at least reduced.

[0011] The problem concerning the sensor device is solved by a sensor device having the features of claim 1. The problem concerning the compensation device is solved by a compensation device having the features of claim 16. The problem concerning the method is solved by a method having the features of claim 17. The problem concerning the projection exposure system is solved by a projection exposure system having the features of claim 18. The problem concerning the lithography system is solved by a lithography system having the features of claim 19. The problem concerning the inspection system is solved by an inspection system having the features of claim 20. The problem concerning the coordinate measuring machine is solved by a coordinate measuring machine having the features of claim 21. Advantageous embodiments with expedient further developments are specified in the subclaims.

[0012] The sensor device is characterized in particular in that the pressure and / or vibration sensor is formed as a capacitive sensor with an elastic dielectric arranged between at least two electrodes. The elastic dielectric can in particular be formed as or comprise an electroactive polymer. Alternatively, the elastic dielectric can also be formed from or comprise a plurality of different electroactive polymers. The elastic dielectric can in particular be formed as a film, a layer, or a gel. The electrodes can be applied as a layer to the elastic dielectric, or the elastic dielectric can be connected to two electrodes on opposite sides. It is preferred if the electrodes and / or the dielectric are formed elastically. At least one of the electrodes can also be divided into a plurality of sub-electrodes.The fluid flowing between an inlet and an outlet of the line exerts a force on the pressure and / or vibration sensor such that the distance between the electrodes changes. The change in the distance between the electrodes leads to a change in capacitance, which represents a measure of the pressure change or a relative temporal change in the line. Using the sensor according to the invention, force changes, pressure changes, pressure amplitudes, in particular acoustic pressure amplitudes, temporal changes in distance, or measured variables derived from temporal changes in distance, such as vibrations or deformations, can be determined. The dielectric can also be elastic and the electrodes can be elastic. Furthermore, the sensor can also have a plurality of elastic dielectrics connected in series and arranged between electrodes.Furthermore, it is also possible for a plurality of arrangements, each comprising two electrodes and an elastic dielectric arranged between these electrodes, to be connected in series and / or stacked one above the other. Optionally, at least two of the arrangements can have elastic dielectrics designed to detect amplitude or frequency ranges that differ from one another at least in certain areas.

[0013] In a particularly preferred embodiment, the pressure and / or vibration sensor is formed as a gel sensor or as a hydrogel sensor, i.e., the elastic dielectric is preferably formed as a gel or as a hydrogel, which is arranged between the at least two electrodes. The hydrogel is formed as a gel, which comprises at least one polymer and water. By forming the sensor as a hydrogel sensor, the stiffness and / or impedance of the sensor are similar to or equal to the stiffness and / or impedance of the fluid to be measured flowing in the line. The fluid is preferably formed as a coolant, particularly preferably as a water-based coolant, but can also be formed as a gas, for example as air, or comprise this. The fluid can also be formed as a heating medium.

[0014] Particularly preferably, the pressure and / or vibration sensor is arranged within the line. Alternatively, the pressure and / or vibration sensor can also be mounted on the line, i.e., on the outer wall of the line. If the sensor is mounted on the outer wall of the line, the line should be elastic. It is particularly advantageous if a plurality of pressure and / or vibration sensors are arranged in or on the line.

[0015] Furthermore, it is advantageous if an optical element is present, and if the at least one line is routed at least partially through or along the optical element. This enables the use of the pressure and / or vibration sensor with temperature-controlled optical elements. Of course, the line can also be routed through or along any object to be temperature-controlled. The object can be formed, for example, as a support structure or an actuator.

[0016] In order to minimize the influence of the pressure and / or vibration sensor itself on the flow in the line and thus on the measurement result, it is advantageous if the line has a wall and if the pressure and / or vibration sensor is at least partially accommodated in a recess in the wall, in particular the inner wall. Of course, the wall can have several recesses, in each of which one or more pressure and / or vibration sensors are accommodated. Particularly preferably, the pressure and / or vibration sensor is completely accommodated in the recess, but can of course also be arranged so as to protrude beyond the wall or the recess. The pressure and / or vibration sensor can also be at least partially arranged in a recess in the outer wall.Alternatively, the pressure and / or vibration sensor can be arranged in a cavity formed in the wall or even be arranged within the flow, i.e., floating in the line, or floating in the fluid flowing in the line. The pressure and / or vibration sensor can also be fixed to the line.

[0017] In a particularly preferred embodiment, the pressure and / or vibration sensor is at least partially flush with the wall. In other words, the surface of the pressure and / or vibration sensor facing the flow is at least partially flush with the wall.

[0018] In order to provide a more robust pressure and / or vibration sensor, it is preferred if the pressure and / or vibration sensor is at least partially, preferably completely, covered by a cover, preferably a thin-walled cover, on the side facing the fluid. The cover can be rigid or elastic. If the cover is elastic, it is preferred if it is dynamically inactive for the frequency range considered during the measurement. In particular, the cover can also be porous or formed as a grid. There should preferably be direct contact, at least in some areas, between the fluid flowing in the line and the pressure and / or vibration sensor.

[0019] Furthermore, it is preferred if the pressure and / or vibration sensor has at least one damping means. The damping means can be arranged in the line, in particular in the wall of the line. At least one of the pressure and / or vibration sensors is accommodated in the damping means, at least in part. The damping means can be formed, for example, as an elastic or viscoelastic damping means. In particular, the damping means can be formed as an elastic or viscoelastic hose. The damping means is preferably designed to dampen vibrations caused, in particular, by the fluid flowing in the line. The pressure and / or vibration sensor can also be used in the present case to check the functionality of the damping means based on a detected change in pressure or temporal displacement.For example, a detected pressure change or a detected pressure can be compared with a reference pressure change or a reference pressure. If the detected pressure / pressure change deviates from or exceeds the reference pressure / reference pressure change, a malfunction of the damping device can be concluded.

[0020] To increase design freedom when routing the line within the object, particularly in an optical element, it is advantageous if the line has a line section that is bent or kinked, and if at least one of the pressure and / or vibration sensors is arranged on or in this line section. The line section that is bent or kinked preferably has one or more recesses within the wall, in which at least one pressure and / or vibration sensor is at least partially accommodated. The line consequently undergoes a change of direction. The change of direction can, for example, be an angle of greater than 20°.

[0021] Furthermore, it is preferred if the line has at least one side arm, and if at least one pressure and / or vibration sensor is at least partially arranged in the side arm, preferably in a recess within the wall of the side arm. The side arm can have the same cross-section or a cross-section that differs from that of the line.

[0022] Alternatively or additionally, at least one of the side arms can be formed as or comprise a Helmholtz resonator. The Helmholtz resonator has a membrane that separates the fluid flowing in the line from a second fluid that differs from the fluid, wherein the pressure and / or vibration sensor is preferably mounted on the membrane.

[0023] Alternatively or additionally, the side arm can be formed as a bypass that is fluidically connected to the line at least at two points.

[0024] Furthermore, it is advantageous if the stiffness of the elastic dielectric, in particular the hydrogel, at least approximately corresponds to the stiffness of the fluid flowing in the line. The material of the elastic dielectric is preferably adapted to the fluid flowing in the line.

[0025] The elastic dielectric preferably additionally comprises at least one capacitance-increasing element. The capacitance-increasing element can be formed as a deformable network, in particular as metal particles, for example as silver nanoparticles.

[0026] The invention further relates to a compensation device with at least one sensor device and at least one compensation means configured to compensate for or at least reduce the pressure or temporal displacement changes detected by the sensor device, or their fluctuations, or a deviation from a predetermined limit value by a predetermined or predeterminable value. The compensation means can be formed, for example, as a further pressure wave, which can be generated, for example, by at least one actuator, and which destructively interferes with the pressure wave at the location where the pressure fluctuation occurs.

[0027] The invention also relates to a method for detecting a pressure and / or temporal path change with a sensor device comprising the steps: a) Detecting a capacitance between the electrodes of the pressure and / or vibration sensor, b) Determining a change in capacity by comparing the recorded capacity with a previously recorded or stored or depositable capacity and c) Determining a change in pressure or displacement over time using the determined change in capacity.

[0028] By means of the recorded pressure or temporal displacement change, derived quantities such as vibrations, force changes, acceleration changes, speed changes, deformations, etc. can be recorded.

[0029] In particular, it is preferred if the capacitance is measured and the change in capacitance is determined multiple times, especially continuously at regular or irregular intervals, in order to be able to detect pressure fluctuations and their frequency spectra in the line. The preferred frequency range of the pressure and / or vibration sensor is in the range from 1 Hz to 1000 Hz.

[0030] Furthermore, it is advantageous if the method additionally includes at least the step of detecting and compensating for the determined pressure or temporal displacement changes. For this purpose, it is particularly advantageous if a further pressure wave is generated, for example, by means of an actuator, which destructively interferes with the pressure wave at the location where the pressure fluctuation occurs.

[0031] The invention also relates to a projection exposure system with at least one sensor device. The sensor device can be configured, in particular, to detect a pressure and / or temporal displacement change and / or vibration of an object of the projection exposure system through which a line with a pressure and / or vibration sensor is routed. The advantages and embodiments mentioned for the sensor device also apply to the projection exposure system. The projection exposure system is configured, in particular, to carry out the method according to the invention.

[0032] The invention also relates to a lithography system with at least one sensor device. The sensor device can be configured, in particular, to detect a pressure and / or temporal displacement change and / or vibration of an object of the lithography system through which a line with a pressure and / or vibration sensor is routed. The advantages and embodiments mentioned for the sensor device also apply to the lithography system. The lithography system is configured, in particular, to carry out the method according to the invention.

[0033] The inspection system according to the invention for checking an optical element or a wafer, a wafer stage, a reticle, or a reticle stage has at least one sensor device according to the invention. The advantages and embodiments mentioned for the sensor device also apply to the inspection system comprising at least one sensor device. An example of such an inspection system for mask or wafer inspection (without the sensor device according to the invention) is known from the document DE 10 2012 205 181 A1, the entire content of which is incorporated into the present application by reference. The inspection system is particularly configured to carry out the method according to the invention.

[0034] The coordinate measuring machine according to the invention has at least one sensor device according to the invention. Coordinate measuring machines are used for inspecting or measuring components, wherein the component is typically scanned, and distances or positions are determined based on the scanning. For this purpose, an optical system as well as a movable frame structure and / or a high-precision positioning system are provided, which supports the component or object to be inspected. The advantages and embodiments mentioned for the sensor device also apply to the coordinate measuring machine comprising at least one sensor device. An example of such a coordinate measuring machine (without the sensor device according to the invention) is known from the document DE 10 2019 213 794A1, the entire content of which is incorporated into the present application by reference. The coordinate measuring machine is particularly configured to carry out the method according to the invention.

[0035] The sensor device according to the invention can also be used in a measuring machine. The measuring machine has at least one sensor device according to the invention. The measuring machine can be used in particular in the context of manufacturing technology or industrial metrology in mechanical engineering, for example, in the automotive industry or aerospace engineering. The advantages and embodiments mentioned for the sensor device also apply to the measuring machine comprising at least one sensor device. The measuring machine is particularly configured to carry out the method according to the invention.

[0036] Furthermore, the lithography system or the projection exposure system or the inspection system or the coordinate measuring machine or the measuring machine can additionally or alternatively comprise a compensation device according to the invention as described above, with at least one compensation means configured to compensate for or at least reduce the pressure or temporal displacement changes or fluctuations detected by the sensor device. The compensation means can be formed, for example, as a further pressure wave, which can be generated, for example, by at least one actuator, and which destructively interferes with the pressure wave at the location where the pressure fluctuation occurs.

[0037] Further features, properties, and advantages of the present invention are described in more detail below using embodiments with reference to the accompanying figures. All features described so far and below are advantageous both individually and in any combination. The embodiments described below are merely examples and do not limit the subject matter of the invention. They show: Fig. 1a a schematic representation of a microlithographic projection exposure system designed for operation in the EUV, Fig. 1b a schematic representation of a microlithographic projection exposure system designed for operation in DUV, Fig. 2 a schematic representation of a first embodiment of a sensor device, Fig. 3 a schematic representation of a first embodiment of a pressure and / or vibration sensor, Fig. 4 a schematic representation of a second embodiment of a pressure and / or vibration sensor, Fig. 5 a schematic representation of a second embodiment of a sensor device, Fig. 6 a schematic representation of a third embodiment of a sensor device, Fig. 7 a schematic representation of a fourth embodiment of a sensor device, Fig. 8 is a schematic representation of a fifth embodiment of a sensor device, Fig. 9 a schematic representation of a sixth embodiment of a sensor device, Fig. 10 is a schematic representation of a seventh embodiment of a sensor device, and Fig. 11 a schematic representation of an eighth embodiment of a sensor device.

[0038] Fig. 1a shows a schematic representation of an exemplary projection exposure system 600 designed for operation in the EUV. However, the invention can also be used in other nanopositioning systems.

[0039] According to Fig. 1a, an illumination device in a projection exposure system 600 designed for EUV comprises a field facet mirror 603 and a pupil facet mirror 604. The light from a light source unit, which comprises a plasma light source 601 and a collector mirror 602, is directed onto the field facet mirror 603. A first telescope mirror 605 and a second telescope mirror 606 are arranged in the light path downstream of the pupil facet mirror 604. A deflection mirror 607 is arranged downstream in the light path, which deflects the radiation incident upon it onto an object field in the object plane of a projection lens comprising six mirrors 651-656. At the location of the object field, a reflective structure-bearing mask 621 is arranged on a mask table 620, which is imaged by means of the projection lens into an image plane in which a substrate 661 coated with a light-sensitive layer (photoresist) is located on a wafer table 660.

[0040] The invention can be used in a DUV system as well as in Fig. 1b. A DUV system is basically like the EUV system described above from the Fig. 1a, whereby mirrors and lenses can be used as optical elements in a DUV system and the light source of a DUV system emits useful radiation in a wavelength range from 100 nm to 400 nm.

[0041] The Fig. The DUV lithography system 700 shown in Figure 1b has a DUV light source 701. An ArF excimer laser, for example, can be provided as the DUV light source 701, which emits radiation 702 in the DUV range at, for example, 193 nm. A beam-shaping and illumination system 703 directs the DUV radiation 702 onto a photomask 704. The photomask 704 is designed as a transmissive optical element and can be arranged outside the systems 703. The photomask 704 has a structure that is imaged in a reduced size onto a wafer 706 or the like by means of the projection system 705. The projection system 705 has a plurality of lenses 707 and / or mirrors 708 for imaging the photomask 704 onto the wafer 706. Individual lenses 707 and / or mirrors 708 of the projection system 705 can be arranged symmetrically to the optical axis 709 of the projection system 705.It should be noted that the number of lenses 707 and mirrors 708 of the DUV lithography system 700 is not limited to the number shown. More or fewer lenses 707 and / or mirrors 708 can also be provided. In particular, the beam shaping and illumination system 703 of the DUV lithography system 700 has a plurality of lenses 707 and / or mirrors 708. Furthermore, the mirrors are usually curved at their front side for beam shaping. An air gap 710 between the last lens 707 and the wafer 706 can be replaced by a liquid medium having a refractive index > 1. The liquid medium can be, for example, ultrapure water. Such a setup is also referred to as immersion lithography and has an increased photolithographic resolution.

[0042] Fig. Figure 2 shows a first embodiment of a sensor device 100 with at least one line 101 through which a fluid 114 flows from a fluid source (not shown in detail). The sensor device 100 comprises at least one pressure and / or vibration sensor 102 for detecting a change in pressure or a change in the displacement over time within the line 101. The pressure and / or vibration sensor 102 is designed as a capacitive sensor.

[0043] The structure of the pressure or vibration sensor 102 is described in more detail in the Fig. 3 and 4. This comprises at least two electrodes 103, 104, wherein an elastic dielectric 105 is arranged between the electrodes 103, 104. The elastic dielectric 105 can in particular be formed as an electroactive polymer or comprise this. Alternatively, the elastic dielectric 105 can also be formed from or comprise a plurality of different electroactive polymers. The elastic dielectric 105 can in particular be formed as a film, a layer, or as a gel. The electrodes 103, 104 can be applied as a layer to the elastic dielectric 105, or the elastic dielectric 105 can be connected to two electrodes 103, 104 on opposite sides. In addition to the elastic dielectric 105, the electrodes 103, 104 can also be formed elastically. Likewise, the dielectric 105 can be elastic and the electrodes 103, 104 can be formed elastically.Furthermore, the sensor can also comprise a plurality of elastic dielectrics 105 connected in series and arranged between electrodes 103, 104. Furthermore, it is also possible for a plurality of arrangements, each comprising two electrodes 103, 104 and an elastic dielectric 105 arranged between these electrodes 103, 104, to be connected in series and / or stacked one above the other. Optionally, at least two of the arrangements can comprise elastic dielectrics 105 designed to detect amplitude or frequency ranges that differ from one another at least in certain areas. In . Fig. 4 discloses that at least one of the electrodes 103, 104 can also be divided into a plurality of sub-electrodes. This enables better local resolution when measuring changes in pressure, displacement, or vibration over time. The material of the elastic dielectric 105 is preferably adapted to the properties, in particular the stiffness and / or impedance, of the fluid 114 flowing in the line 101. The elastic dielectric 105 can optionally have at least one capacitance-increasing element. The capacitance-increasing element can be formed as a deformable network, in particular as metal particles, for example as silver nanoparticles.

[0044] The pressure and / or vibration sensor 102 functions as follows: due to the fluid 114 flowing between an inlet of line 101 and an outlet of line 101, a force is exerted on the pressure and / or vibration sensor 102 such that the distance between the electrodes 103, 104 changes. The change in the distance between the electrodes 103, 104 leads to a change in capacitance, which represents a measure of the pressure change or a temporal change in the path in the line 101. By means of the sensor device according to the invention, force changes, pressure changes, pressure amplitudes, in particular acoustic pressure amplitudes, temporal changes in the path, or even quantities derived from path changes, such as vibrations, accelerations, velocities, or deformations, can be determined.

[0045] Particularly preferably, the pressure and / or vibration sensor 102 is formed as a hydrogel sensor, i.e., the elastic dielectric 105 is preferably formed as a hydrogel, which is arranged between the at least two electrodes 103, 104. The hydrogel is formed as a gel comprising at least one polymer and water. By forming the elastic dielectric 105 as a hydrogel, the stiffness and / or impedance of the pressure and / or vibration sensor are similar to or equal to the stiffness and / or impedance of the fluid 114 to be measured, which flows in the line 101, thereby enabling a more precise measurement of pressure, displacement, or vibration changes. The fluid 114 is preferably formed as a coolant, particularly preferably as a water-based coolant, but can also be formed as a gas, for example, air, or comprise it. However, the fluid 114 can also be formed as a heating medium.

[0046] In Fig. 2 again shows that the pressure and / or vibration sensor 102 is arranged within the line 101. Alternatively, the pressure and / or vibration sensor 102 can also be introduced or attached to the line 101, i.e., on the outer wall of the line 101, preferably an elastic line 101. In particular, a plurality of pressure and / or vibration sensors 102 can be arranged in or on the line 101 at a distance from one another. A plurality of pressure and / or vibration sensors can also be used to decompose the measured signal into direction-dependent wave components.

[0047] In order to minimize the influence of the pressure and / or vibration sensor 102 itself on the flow in the line 101 and thus on the measurement result, it is at least partially accommodated in a recess 107 of a wall 106, in particular the inner wall. Of course, the wall 106 can have a plurality of recesses 107, in each of which one or more pressure and / or vibration sensors 102 are accommodated. In the present case, the pressure and / or vibration sensor 102 is completely accommodated in the recess 107, but can of course also be arranged so as to protrude beyond the wall 106 or the recess 107. The pressure and / or vibration sensor 102 can also be at least partially arranged in a recess 107 in the outer wall.Furthermore, the pressure and / or vibration sensor 102 can also be incorporated into a cavity (not shown in detail) of the wall 106 or can be arranged floating in the line 101, i.e., floating in the fluid 114 flowing in the line 101. The pressure and / or vibration sensor 102 can additionally be fixed to the line 101.

[0048] In the present case, the pressure and / or vibration sensor 102 is flush with the wall 106. In other words, the surface of the pressure and / or vibration sensor 102 facing the flow or fluid 114 is flush with the wall 106.

[0049] The embodiment according to the Fig. 5 differs in that the pressure and / or vibration sensor 102 is at least partially, preferably completely, covered by a cover 108, preferably a thin-walled cover 108, on the side facing the fluid 114. The cover 108 can be rigid or elastic. If the cover 108 is elastic, it is preferably dynamically inactive for the frequency range considered during the measurement. In particular, the cover can also be porous or formed as a grid.

[0050] The line in the example according to the Fig. 6 has a curved line section 110. The course of the line 101 consequently undergoes a change of direction, in this case by 90°. In the wall 106 of the curved line section 110, there are at least one, in this case two, recesses 107, in each of which at least one pressure and / or vibration sensor 102 is at least partially accommodated.

[0051] The embodiment according to the Fig. 7 differs in that a damping means 109 is additionally arranged in the line 101 or in the sensor device 100, in particular in the wall 106. Optionally, at least one pressure and / or vibration sensor 102 can be accommodated in the damping means 109, at least in part. Alternatively, the pressure and / or vibration sensor 102 can also be attached to the outside of the damping means 109 in order to detect the change in deformation of the damping means 109. The damping means 109 can, for example, be formed as an elastic or viscoelastic damping means 109. In particular, the damping means 109 can be formed as an elastic or viscoelastic hose. The damping means 109 is preferably designed to dampen vibrations caused in particular by the fluid 114 flowing in the line 101.The pressure and / or vibration sensor 102 can also be used here to check the functionality of the damping means 109 based on a detected pressure change or temporal displacement change. For example, a detected pressure change or a detected pressure can be compared with a reference pressure change or a reference pressure. If the detected pressure / pressure change deviates from or exceeds the reference pressure / reference pressure change, a malfunction of the damping means 109 can be concluded.

[0052] The embodiment according to the Fig. 8 deviates from that according to Fig. 7 in that the line section in which the damping means 109 is arranged additionally has an enveloping atmosphere 112 with a second fluid 115 that differs from the fluid 114. In particular, the compressibility of one fluid can differ from the other fluid.

[0053] In the examples according to the Fig. 9 to 11, the line 101 has at least one side arm 111. At least one pressure and / or vibration sensor 102 is at least partially accommodated in the side arm 111 in a recess 107 of the wall 106. The cross-section of the side arm 111 may be the same as or different from that of the line. Furthermore, the side arm may also have a gap opening (not shown in detail) at the connection to the line 111.

[0054] In the embodiment according to Fig. 10, the side arm 111 is formed as a bypass which is fluidically connected to the line 101 at least two points.

[0055] In the embodiment according to the Fig.11, the side arm 111 is formed as or comprises a Helmholtz resonator 113. The Helmholtz resonator 113 has a membrane 116 that separates the fluid 114 flowing in the line 101 from a second fluid 115 that differs from the fluid 114. At least one pressure and / or vibration sensor 102 is arranged on the membrane 116.

[0056] The sensor device 100 can in particular be applied to or introduced into an object, in particular onto or into an optical element.

[0057] The sensor device 100 can be used in a projection exposure system or an illumination system or a projection lens for a lithography system or in a lithography system. The sensor device can then be configured to detect a pressure and / or vibration change of an object of the projection exposure system, the illumination system, the projection optics, or the lithography system.

[0058] The method for detecting a pressure and / or temporal displacement change with the previously described sensor device 100 comprises the following steps: a) detecting a capacitance between the electrodes 103,104 of the pressure and / or vibration sensor 102, b) Determining a change in capacity by comparing the recorded capacity with a previously recorded or stored or depositable capacity and c) Determining a change in pressure or displacement over time using the determined change in capacity.

[0059] Using the detected pressure or temporal displacement change, derived variables such as vibrations, force changes, acceleration changes, speed changes, deformations, etc. can be recorded. The capacitance can be recorded and the capacitance change determined multiple times, particularly continuously at regular or irregular intervals, in order to record pressure fluctuations and their frequency spectra in the line. Furthermore, the detected pressure or displacement changes can be compensated or reduced. For this purpose, a damping element 109 can be used, for example. For example, a further pressure wave can be generated, for example by means of an actuator, which destructively interferes with the pressure wave at the location where the pressure fluctuation occurs. The preferred frequency range of the pressure and / or vibration sensor is in the range of 1 Hz to 1000 Hz. LIST OF REFERENCE SYMBOLS 100 sensor device 101 Line 102 Pressure and / or vibration sensor 103 first electrode 104 second electrode 105 elastic dielectric 106 wall 107 recess 108 Cover 109 Damping agents 110 line section 111 branch of the line 112 Envelope atmosphere 113 Helmholtz resonator 114 first fluid 115 second fluid 116 Membran 600 projection exposure system 601 plasma light source 602 collector mirror 603 field facet mirror 604 Pupillary facet mirror 605 first telescope mirror 606 second telescope mirror 607 Deflecting mirror 620 Mask table 621 Mask 651 Mirror (projection lens) 652 mirror (projection lens) 653 Mirror (projection lens) 654 mirror (projection lens) 655 Mirror (projection lens) 656 mirrors (projection lens) 660 wafer table 661 coated substrate 700 DUV lithography system 701 DUV light source 702 DUV radiation / beam path 703 Beam Forming and Illumination System (DUV) 704 Photomask 705 projection system 706 wafers 707 lens 708 mirrors 709 optical axis QUOTES CONTAINED IN THE DESCRIPTION

[0000] This list of documents submitted by the applicant was generated automatically and is included solely for the convenience of the reader. This list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions. Cited patent literature

[0000] DE 10 2021 210 470 B3

[0006] DE 10 2012 205 181 A1

[0033] DE 10 2019 213 794A1

[0034] Cited non-patent literature

[0000] Hydrogel Microphones for Stealthy Underwater Listening" by Yang Gao et. al.; Nature Comm. 7:12316, 2016

[0009]

Claims

[1] Sensor device (100) with at least one line (101) through which a fluid (114) flows from a fluid source, and with at least one pressure and / or vibration sensor (102) for detecting a pressure or a temporal path change within and / or on the line (101), characterized by that the pressure and / or vibration sensor (102) is formed as a capacitive sensor with an elastic dielectric (105) arranged between at least two electrodes (103,104). [2] Sensor device (100) according to claim 1, characterized by that the elastic dielectric (105) comprises or is formed as an electroactive polymer. [3] Sensor device (100) according to claim 1 or 2, characterized by that the pressure and / or vibration sensor (102) is arranged within the line (101). [4] Sensor device (100) according to one of claims 1 to 3, characterized bythat an optical element is present, and that the at least one line (101) is guided at least partially through or on the optical element. [5] Sensor device (100) according to one of claims 1 to 4, characterized by that the line (101) has a wall (106) and that the pressure and / or vibration sensor (102) is at least partially accommodated in a recess (107) of the wall (106). [6] Sensor device (100) according to claim 5, characterized by that the surface of the pressure and / or vibration sensor (102) facing the fluid (114) is at least partially flush with the surface of the wall (106). [7] Sensor device (100) according to one of claims 1 to 6, characterized by that the pressure and / or vibration sensor (102) is at least partially covered by a cover (108) on the side facing the fluid (114). [8] Sensor device (100) according to one of claims 1 to 7, characterized bythat the sensor device has a damping means (109). [9] Sensor device (100) according to claim 8, characterized by that at least one pressure and / or vibration sensor (102) is accommodated in the damping means (109) at least in some areas. [10] Sensor device (100) according to one of claims 1 to 9, characterized by that the line (101) has a line section (110) which is bent or kinked, and that at least one pressure and / or vibration sensor (102) is arranged on or in this line section (110). [11] Sensor device (100) according to one of claims 1 to 10, characterized by that the line (101) has a side arm (111), and that at least one pressure and / or vibration sensor (102) is arranged in or on the side arm (111). [12] Sensor device (100) according to claim 11, characterized bythat the side arm (111) is formed as a Helmholtz resonator (113) or comprises this. [13] Sensor device (100) according to claim 11 or 12, characterized by that the side arm (111) is formed as a bypass which is fluidically connected to the line (101) at least at two points. [14] Sensor device (100) according to one of claims 1 to 13, characterized by that the stiffness of the elastic dielectric (105) corresponds at least approximately to the stiffness of the fluid (114) flowing in the line (101). [15] Sensor device (100) according to one of claims 1 to 14, characterized by that the elastic dielectric (105) additionally has at least one capacitance-increasing element. [16] Compensation device with at least one sensor device (100) according to one of claims 1 to 15 and with at least one compensation means which is designed to compensate or at least reduce the pressure or temporal path changes detected by the sensor device (100). [17] Method for detecting a pressure or temporal path change with a sensor device (100) according to one of claims 1 to 15, comprising the steps: a. detecting a capacitance between the electrodes (103,104) of the pressure and / or vibration sensor (102), b. Determining a capacity change by comparing the recorded capacity with a previously recorded or stored or depositable capacity and c. Determining a change in pressure or displacement over time using the determined change in capacitance. [18] Projection exposure system (600, 700) with a sensor device (100) according to one of claims 1 to 15 or with a compensation device according to claim 16. [19] Lithography system with a sensor device (100) according to one of claims 1 to 15 or with a compensation device according to claim 16. [20] Inspection system with a sensor device (100) according to one of claims 1 to 15 or with a compensation device according to claim 16. [21] Coordinate measuring machine with a sensor device (100) according to one of claims 1 to 15 or with a compensation device according to claim 16.

Images