Semiconductor module arrangement

Abstract

A semiconductor module arrangement comprises a first substrate (10) with a dielectric insulating layer (11) and a first metallization layer (111) arranged on a surface of the dielectric insulating layer (11), wherein the first metallization layer (111) comprises a first section (1111), a second section (1112), a third section (1113) and a fourth section (1114), two or more controllable semiconductor elements (22x), each of which comprises a first contact pad (2x1), a second contact pad and a third contact pad (2x3), wherein the second contact pads of the two or more controllable semiconductor elements (22x) are electrically coupled to the first section (1111).the first contact pad (2x1) of each controllable semiconductor element (22x) of the two or more controllable semiconductor elements (22x) is electrically coupled to the second section (1112) by means of one or more electrical connecting elements (3), the third contact pad (2x3) of each controllable semiconductor element (22x) of the two or more controllable semiconductor elements (22x) is electrically coupled to the third section (1113) by means of one or more electrical connecting elements (3), and the first contact pad (2x1) of each controllable semiconductor element (22x) of the two or more controllable semiconductor elements (22x) is electrically coupled to the fourth section (1114) by means of one or more electrical connecting elements (3).

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