POWER MODULE WITH A MULTI-LEVEL METALLIC FRAME WITH POWER CONNECTIONS

Abstract

A power module comprises: a substrate having a patterned metallization on an electrically insulating body; a plurality of first power semiconductor dies attached to a first metallic island of the patterned metallization; a plurality of second power semiconductor dies attached to a second metallic island of the patterned metallization; a molding compound at least partially embedding the substrate, the first power semiconductor dies, and the second power semiconductor dies; and a multi-level metallic frame partially embedded in the molding compound and disposed over the substrate.The multi-level metallic frame includes a plurality of power terminals exposed on a side of the molding compound facing away from the patterned metallization and transitioning between two or more different levels to electrically connect the first power semiconductor dies and the second power semiconductor dies in a half-bridge or full-bridge configuration.

Description

BACKGROUND

[0001] Molded power semiconductor modules comprise power semiconductor dies embedded in a molding compound and electrically connected together to form a power converter component of a power electronics device, such as a half-bridge or full-bridge converter. The signal and power terminals typically protrude from one or more side surfaces of the molding compound. The power terminals are connected to a bus bar, and the signal terminals are connected to a printed circuit board (PCB) containing the gate driver and / or control IC (integrated circuit) used to drive and control the power module. Each power terminal is part of an inductance loop, such as a DC+-to-AC inductance loop, an AC-to-DC inductance loop, and a DC+-to-DC inductance loop.Long inductance loops lead to high stray inductance, resulting in overvoltage conditions and slower switching frequencies on the power module. Shorter inductance loops are a key challenge in power module design. The power connection design and the signal / power routing on the module substrate are limiting factors. These same factors limit the circuit symmetry achievable through the module design.

[0002] Therefore, there is a need for power modules and associated power electronics assemblies with lower stray inductance. SUMMARY

[0003] According to one embodiment of a power module, the power module comprises: a substrate having a structured metallization on an electrically insulating body; a plurality of first power semiconductor dies attached to a first metallic island of the structured metallization; a plurality of second power semiconductor dies attached to a second metallic island of the structured metallization; a molding compound at least partially embedding the substrate, the first power semiconductor dies, and the second power semiconductor dies;and a multi-level metallic frame partially embedded in the molding compound and disposed over the substrate, the multi-level metallic frame comprising a plurality of power terminals exposed on a side of the molding compound facing away from the patterned metallization and transitioning between two or more different levels to electrically connect the first power semiconductor dies and the second power semiconductor dies in a half-bridge or full-bridge configuration. A power electronics assembly including a plurality of the power modules and a busbar attached to the power terminals of the power modules is also described, as are methods of manufacturing the power module.

[0004] According to one embodiment of a power electronics assembly for supplying power to a multi-phase load, the power electronics assembly comprises: one or more power modules for each phase of the multi-phase load, each power module comprising: a substrate having a patterned metallization on an electrically insulating body; a plurality of first power semiconductor dies attached to a first metallic island of the patterned metallization; a plurality of second power semiconductor dies attached to a second metallic island of the patterned metallization; a molding compound at least partially embedding the substrate, the first power semiconductor dies, and the second power semiconductor dies;and a multi-level metallic frame partially embedded in the molding compound and disposed over the substrate, the multi-level metallic frame comprising a plurality of power terminals exposed on a side of the molding compound facing away from the patterned metallization and transitioning between two or more different levels to electrically connect the first power semiconductor dies and the second power semiconductor dies in a half-bridge or full-bridge configuration, the power electronics assembly further comprising a bus bar connected to the exposed portion of the power terminals of the power modules.;

[0005] Those skilled in the art will recognize additional features and advantages upon reading the following detailed description and upon viewing the accompanying drawings. SHORT DESCRIPTION OF THE CHARACTERS

[0006] The elements of the drawings are not necessarily to scale relative to one another. Like reference numerals indicate corresponding similar parts. The features of the various illustrated embodiments may be combined, provided they are not mutually exclusive. Embodiments are illustrated in the drawings and described in detail in the following description. Fig. 1A illustrates a side perspective view of one embodiment of a power module. Fig. Figure 1B illustrates a top view of the power module. Fig. Figure 1C illustrates a cross-sectional view of the power module along the line shown in Fig. 1B is labeled AA. Fig. Figure 1D illustrates a cross-sectional view of the power module along the line shown in Fig. 1B is labeled BB. Fig. 2A to Fig. 2C illustrate a top view (left side of the figures) and a perspective side view (right side of the figures) during different stages of the manufacture of the power module used in Fig. 1A to Fig. 1D is shown. Fig. 3A illustrates a top view of the power module, Fig. Figure 3B illustrates a cross-sectional view of the power module along the line shown in Fig. 3A is labelled AA, and Fig. Figure 3C illustrates a cross-sectional view of the power module along the line shown in Fig. 3A is designated BB, according to another embodiment. Fig. 4 illustrates a perspective side view of the power module according to another embodiment. Fig. 5A to Fig. 5C illustrate a top view (left side of the figures) and a perspective side view (right side of the figures) during different stages of the manufacture of the power module used in Fig. 4 is shown. Fig. 6 to Fig. 9 illustrate a perspective side view of the power module according to additional embodiments. Fig. Figure 10 illustrates a partial cross-sectional view of the power module in the area of ​​a single screw or bolt type power terminal connector. Fig. 11 illustrates a partial cross-sectional view of the power module in the region of forming a laser-welded busbar connection to the exposed portion of a power terminal of the power module. Fig. 12 illustrates a partial cross-sectional view of the power module in the region of forming a laser-welded busbar connection to the exposed portion of a power terminal of the power module according to another embodiment. Fig. 13 illustrates a top view of a power electronics assembly according to one embodiment. Fig. 14 illustrates a top view of the power electronics assembly according to another embodiment. DETAILED DESCRIPTION

[0007] The embodiments described herein provide a molded power module design with low leakage inductance, e.g., below 10 nH, below 5 nH, below 3 nH, or even below 2 nH. Such low leakage inductance is realized by using a multi-level metallic frame to implement the power terminals of the molded module. The power terminals have a shorter length compared to conventional power module terminals that protrude from one or more side surfaces of the molding compound. Instead, the power terminals are exposed for connection to a side of the molding compound facing away from the die carrier (substrate), which is at least partially embedded in the molding compound. Such a configuration reduces the length of the power terminals, thereby reducing the leakage inductance of the module.

[0008] The power terminals transition between two or more different levels to electrically connect power semiconductor dies attached to the substrate in a half-bridge or full-bridge configuration. The multi-level metallic frame can be designed so that power terminals at different potentials have a certain degree of vertical overlap, further reducing the module's stray inductance. The multi-level metallic frame, along with a separate metallic frame used for the power module signal connections, enables highly symmetrical power, gate, and signal routing, which distributes current more evenly among the power semiconductor dies contained within the module and reduces deadtime requirements.

[0009] Next, exemplary embodiments of the power module design and corresponding manufacturing methods are described with reference to the figures. Each of the power module embodiments described herein may be used interchangeably unless expressly stated otherwise.

[0010] Fig. 1A illustrates a side perspective view of one embodiment of a power module 100. Fig. Figure 1B illustrates a top view of the power module 100. Fig. Figure 1C illustrates a cross-sectional view of the power module 100 along the line shown in Fig. 1B is labeled AA. Fig. Figure 1D illustrates a cross-sectional view of the power module 100 along the line shown in Fig. 1B is designated BB. The power module 100 can be part of a power electronics assembly for use in various power applications, such as a DC / AC inverter, a DC / DC converter, an AC / DC converter, a DC / AC converter, an AC / AC converter, a multi-phase inverter, an H-bridge, a DC motor drive, etc.

[0011] The power module 100 comprises a substrate 102 with a patterned first metallization 104 on an electrically insulating body 106. The substrate 102 may also have a second metallization 108 on the opposite side of the electrically insulating body 106 as the patterned first metallization 104. The substrate 102 may be a direct copper bonded (DCB) substrate, an active metal brazed (AMB) substrate, or an insulated metal (IMS) substrate, wherein in each case the electrically insulating body 106, e.g., a ceramic body, separates the first and second metallizations 104, 108 of the substrate 102 from each other.

[0012] The first metallization 104 of the substrate 102 is patterned to ensure proper isolation and signal routing for implementing a power electronics device implemented using the power module 100. Example electrical connections will be described in more detail later in the context of a half-bridge. However, a half-bridge is only one example of a power electronics device that may be implemented using the power module 100. The first metallization 104 of the substrate 102 may be patterned differently than illustrated in the figures to facilitate electrical connections for any type of power electronics device implemented using the power module 100.

[0013] The power module 100 also includes first power semiconductor dies 110 attached to a first metallic island 112 of the patterned first metallization 104, and second power semiconductor dies 114 attached to a second metallic island 116 of the patterned first metallization 104. In one embodiment, the power semiconductor dies 110, 114 are vertical power transistor dies. For a vertical power transistor die, the primary current flow path is located between the front and back sides of each die 110, 114 (along the z-direction in Fig. 1A to Fig. 1D). The drain pad is typically located on the backside of the die, with gate and source pads (and optionally one or more sense pads) on the frontside. Additional types of semiconductor dies may be included in the power module 100, such as power diode dies, logic dies, control dies, gate driver dies, etc.

[0014] In one embodiment, the power semiconductor dies 110, 114 are SiC power MOSFET dies (metal oxide semiconductor field-effect transistor dies). The power semiconductor dies 110, 114 may instead be Si power MOSFET dies, HEMT dies (high electron mobility transistors), IGBT dies (insulated gate bipolar transistors), JFET dies (junction field-effect transistor dies), etc. The first power semiconductor dies 110 may be the same or a different type of die as the second power semiconductor dies 114.

[0015] A molding compound 118 at least partially encapsulates the substrate 102, the first power semiconductor dies 110, and the second power semiconductor dies 114. The molding compound 118 is a plastic encapsulant that may be formed from an organic resin, such as an epoxy resin. The plastic encapsulant may include fillers, such as non-melting inorganic materials. Catalysts may be used to accelerate the curing reaction of the organic resin. Other materials, such as flame retardants, adhesion promoters, ion traps, stress relievers, dyes, etc., may optionally be added to the plastic encapsulant. The molding compound 118 may be formed by injection molding, compression molding, film-assisted molding (FAM), reaction injection molding (RIM), resin transfer molding (RTM), blow molding, etc.

[0016] A multi-stage metallic frame 120 is partially embedded in the molding compound 118 and disposed over the substrate 102. In Fig. 1A to Fig. 1D, the multi-stage metallic frame 120 is arranged in the vertical (z) direction above the substrate 102. The front (top) surface of the substrate 102 forms a baseline defining the horizontal plane in Fig. 1A to Fig. 1D. The vertical (z) direction is perpendicular to the horizontal plane, where the horizontal plane is defined by the x and y directions in Fig. 1A to Fig. 1D is defined.

[0017] The multi-level metallic frame 120 includes the module power terminals 122, 124, 126 exposed on the side of the mold compound 118 facing away from the patterned first metallization 104 of the substrate 102. The module power terminals 122, 124, 126 transition between two or more different levels L1, L2, L3 to electrically connect the first power semiconductor dies 110 and the second power semiconductor dies 114 in a half-bridge or full-bridge configuration. The multi-level metallic frame 120 may be a multi-level lead frame. The levels, level transitions, and power terminal features of the multi-level metallic frame 120 may be manufactured using metal processing techniques such as stamping, punching, etching, embossing, etc. The multi-level metallic frame 120 may include a core metal region with one or more layers or coatings, e.g., a bare metal region. B. adhesion promoter layers, corrosion protection layers, etc.

[0018] In the case of a half-bridge configuration, the first power semiconductor dies 110 may be electrically coupled in parallel to form a high-side switching device of the half-bridge, and the second power semiconductor dies 114 may be electrically coupled in parallel to form a low-side switching device of the half-bridge. Continuing with the half-bridge example, the multi-level metallic frame 120 may provide a high-side (DC+) power terminal 122 for providing a high-side DC current path to the high-side switching device, a low-side (DC-) terminal for providing a low-side DC current path to the low-side switching device, and a phase (AC) terminal 126 for providing a phase or quasi-AC current path to the switching node between the high-side switching device and the low-side switching device.The power connection configuration of the multi-stage metallic frame 120 may be designed for other types of power circuit configurations.

[0019] In any case, the power terminals 122, 124, 126 have a shorter length compared to conventional power module terminals, which otherwise extend from one or more side surfaces of the molding compound 118 in the x and / or y direction into the Fig. 1A to Fig. 1D. Instead, the power terminals for connecting to the front (upper) side of the molding compound 118 in the z-direction are located in the Fig. 1A to Fig. 1D. Such a configuration reduces the length of the power terminals 122, 124, 126, thereby reducing the stray inductance of the module. In one embodiment, the power module 100 has a stray inductance below 10 nH, below 5 nH, below 3 nH, or even below 2 nH by using the multi-level metallic frame 120.

[0020] As in Fig. 1B, the multi-level metallic frame 120 may be laterally confined to the footprint of the substrate 102. That is, the multi-level metallic frame 120 may not extend laterally in the x-direction or y-direction beyond the outer edge or perimeter of the substrate 102. Such a configuration further reduces the length of at least some of the power terminals 122, 124, 126, thereby correspondingly reducing the stray inductance of the module.

[0021] As in Fig. 1C and Fig. 1D, the DC terminal 122 of the multi-level metallic frame 120 transitions from a first level L1 to a second level L2 in the vertical (z) direction. The DC terminal 124 of the multi-level metallic frame 120 transitions from the first level L1 to a third level L3 located between the first level L1 and the second level L2. The phase (AC) terminal 126 of the multi-level metallic frame 120 transitions from the first level L1 to the third level L3 and to the second level L2. In the first level L1, the DC terminal 122, the DC terminal 124, and the phase (AC) terminal 126 are each uncovered by the potting compound and are therefore externally accessible at the front (top) side of the potting compound 118 in the z direction.

[0022] As further stated in Fig. 1C and Fig. 1D, in the second level L2, the DC terminal 122 of the multi-level metallic frame 120 is attached to the first metallic island 112 of the patterned substrate metallization 104, and the phase (AC) terminal 126 of the multi-level metallic frame 120 is attached to the second metallic island 116 of the patterned substrate metallization 104. In the third level L3, the DC terminal 124 of the multi-level metallic frame 120 is attached to a load pad 128 of the second power semiconductor chips 114, and the phase (AC) terminal 126 of the multi-level metallic frame 120 is attached to a load pad 130 of the first power semiconductor chips 110.

[0023] In one embodiment, the first power semiconductor die 110 and the second power semiconductor die 114 are power MOSFET dies. According to this embodiment, a drain pad 132 of each first power semiconductor die 110 is attached to the first metallic island 112 of the patterned substrate metallization 104 on the backside of the first power semiconductor die 110. The first metallic island 112 of the patterned substrate metallization 104 provides an electrical connection between the drain pad 132 of each first power semiconductor die 110 and the DC terminal 122 of the multi-level metallic frame 120. Each first power semiconductor die 110 also includes at least one source pad 130 and one gate pad 134 on the frontside of the die 110.

[0024] Continuing with the power MOSFET example, a drain pad 136 of each second power semiconductor die 114 is attached to the second metallic island 116 of the patterned substrate metallization 104 at the backside of the second power semiconductor die 114. The second metallic island 116 of the patterned substrate metallization 104 provides an electrical connection between the drain pad 136 of each second power semiconductor die 114 and the phase (AC) terminal 126 of the multi-level metallic frame 120. Each second power semiconductor die 114 also includes at least one source pad 128 and one gate pad 138 at the frontside of the die 114. In the third level L3, the DC terminal 124 of the multi-level metallic frame 120 is attached to the source pad 128 of the second power semiconductor die 114, and the phase (AC) terminal of the multi-level metallic frame 120 is attached to the source pad 130 of the first power semiconductor die 110.Solder, diffusion solder, adhesive, glue, etc. can be used to make the respective fastenings.

[0025] The signal connections to the power module 100 can be implemented using an additional metallic frame 140 that is separate and distinct from the multi-level metallic frame 120. In the Fig. 1A to Fig. 1D, the additional metallic frame 140 is partially embedded in the encapsulant 118 and includes a first gate terminal 142 protruding from a side surface 144 of the encapsulant 118 and extending along a first edge 146 of the substrate 102. The additional metallic frame 140 also includes a second gate terminal 148 protruding from the side surface 144 of the encapsulant 118 and extending along a second edge 150 of the substrate 102 opposite the first edge 146. The Fig. 1A to Fig. 1D provides better symmetry of the gate signals provided to the power semiconductor dies 110, 114. The gate terminal configuration shown in the Fig. 1A to Fig. The configuration of the patterned substrate metallization 104 shown in Figure 1D similarly provides better power symmetry.

[0026] The first gate terminal 142 of the additional metallic frame 140 is electrically connected to a third metallic island 152 of the patterned substrate metallization 104. The third metallic island 152 of the patterned substrate metallization 104 is electrically connected to the gate pad 134 of the first power semiconductor die 110 by one or more electrical conductors 154, such as a wire ribbon, a metallic clip, bond wires, etc. The second gate terminal 148 of the additional metallic frame 140 is electrically connected to a fourth metallic island 156 of the patterned substrate metallization 104. The fourth metallic island 156 is electrically connected to the gate pad 138 of the second power semiconductor die 114 by one or more electrical conductors 158, such as a wire ribbon, a metallic clip, bond wires, etc.

[0027] In the Fig. 1A to Fig. 1D, the third metallic island 152 of the structured substrate metallization 104 is arranged laterally between the first edge 146 of the substrate 102 and the first metallic island 112 of the structured substrate metallization 104. The fourth metallic island 156 of the structured substrate metallization 104 is arranged laterally between the second edge 150 of the substrate 102 and the second metallic island 116 of the structured substrate metallization 104. According to this embodiment, the first gate terminal 142 and the second gate terminal 148 of the additional metallic frame 140 extend longitudinally in a first lateral direction (y-direction in the Fig. 1A to Fig. 1D) and the part of each power terminal 122, 124, 126 of the multi-stage metallic frame 120 exposed at the upper (front) side of the molding compound 118 also extends longitudinally in the first lateral direction.

[0028] The additional metallic frame 140 may include additional terminals. For example, a first drain sense terminal 160 may be electrically connected to the first metallic island 112 of the patterned substrate metallization 104 by an electrical conductor 162, such as a wire band, a metallic clip, one or more bond wires, etc. A second drain sense terminal 164 may be electrically connected to the second metallic island 116 of the patterned substrate metallization 104 by an electrical conductor 166, such as a wire band, a metallic clip, one or more bond wires, etc. A source sense terminal 168 may be electrically connected to the source pad 128 of the second power semiconductor dies 114 by an electrical conductor 170, such as a wire band, a metallic clip, one or more bond wires, etc. Temperature sense terminals 172, 174 may be electrically connected to fifth and sixth metallic islands 112 and 116, respectively.Sixth metallic islands 176, 178 of the patterned substrate metallization 104 may be connected by respective electrical conductors 180, 182, such as a wire ribbon, a metallic clip, one or more bond wires, etc., to detect the voltage across a temperature sensor 184, such as an NTC (negative temperature coefficient) thermistor. The power module 100 may include additional terminals, components, etc.

[0029] Fig. 2A to Fig. 2C illustrate a top view (left side of the figures) and a perspective side view (right side of the figures) during various stages of manufacturing the power module 100, which in Fig. 1A to Fig. 1D is shown.

[0030] Fig. 2A shows the substrate 102 with the first power semiconductor dies 110 attached to the first metallic island 112 of the patterned substrate metallization 104 and the second power semiconductor dies 114 attached to the second metallic island 116 of the patterned substrate metallization 104. The dies 110, 114 may be attached to the patterned first metallization 104 of the substrate 102 by soldering, diffusion soldering, brazing, welding, gluing, adhering, etc. The terminals 142, 148, 160, 164, 172, 174 of the additional metallic frame 140 may be attached to the patterned first metallization 104 of the substrate 102 during this phase of the module manufacturing process.

[0031] Fig. Figure 2B shows the power terminals 122, 124, 126 of the multi-level metallic frame 120 attached to the corresponding pads 128, 130 of the respective dies 110, 114 and to the respective metallic islands 112, 116 of the patterned substrate metallization 104. The power terminals 122, 124, 126 of the multi-level metallic frame 120 may be attached by soldering, diffusion soldering, brazing, welding, gluing, adhering, etc.

[0032] Fig. Figure 2C shows the power module 100 after the molding process. The molding compound 118 at least partially embeds the substrate 102, the first power semiconductor dies 110, and the second power semiconductor dies 114. The multi-level metallic frame 120 is partially embedded in the molding compound 118, so that the power terminals 122, 124, 126 of the multi-level metallic frame 120 are aligned for contact on the front (top) side of the molding compound 118 in the z-direction. Fig. 2C, which reduces the length of the power terminals 122, 124, 126 and thus the stray inductance of the module. The signal terminals 142, 148, 160, 164, 172, 174 of the additional metallic frame 140 protrude from a side surface 144 of the molding compound 118, so that the power terminals 122, 124, 126 and the signal terminals 142, 148, 160, 164, 172, 174 are externally accessible on different sides of the power module 100.

[0033] Fig. 3A illustrates a top view of the power module 100, Fig. Figure 3B illustrates a cross-sectional view of the power module 100 along the line shown in Fig. 3A is labelled AA, and Fig. Figure 3C illustrates a cross-sectional view of the power module 100 along the line shown in Fig. 3A is designated BB, according to another embodiment. Fig. 3A, Fig. 3B and Fig. 3C are the same views as in Fig. 1B, Fig. 1C or Fig. 1D.

[0034] In Fig. 3A, Fig. 3B and Fig. 3C, the first (DC+) power terminal 122 of the multi-level metallic frame 120 vertically overlaps a portion 124_1 of the second (DC-) power terminal 124 of the multi-level metallic frame 120, which is attached to the load pad 128 of the second power semiconductor dies 114. Alternatively, or in combination, the first (DC+) power terminal 122 of the multi-level metallic frame 120 may vertically overlap a portion 126_1 of the phase (AC-) terminal of the multi-level metallic frame 120, which is attached to the second metallic island 116 of the patterned substrate metallization 104. The overlap between the DC+ and DC terminals 122, 124 and / or the DC+ and AC terminals 122, 126 of the multi-level metallic frame 120 further reduces the stray inductance of the module since these terminals are at different potentials.

[0035] Fig. 4 illustrates a side perspective view of the power module 100 according to another embodiment. Fig. 5A to Fig. 5C illustrate a top view (left side of the figures) and a perspective side view (right side of the figures) during various stages of manufacturing the power module 100, which in Fig. 4 is shown.

[0036] Fig. 5A shows the substrate 102 with the first power semiconductor dies 110 attached to the first metallic island 112 of the patterned substrate metallization 104 and the second power semiconductor dies 114 attached to the second metallic island 116 of the patterned substrate metallization 104. The dies 110, 114 may be attached to the patterned first metallization 104 of the substrate 102 by soldering, diffusion soldering, brazing, welding, gluing, adhering, etc. The terminals 142, 148, 160, 164, 172, 174 of the additional metallic frame 140 may be attached to the patterned first metallization 104 of the substrate 102 during this phase of the module manufacturing process.

[0037] In the Fig. 4 to Fig. 5C, the third and fourth metallic islands 152, 156 of the structured substrate metallization 104 are arranged laterally between the first and second metallic islands 112, 116 of the structured substrate metallization 104. According to this embodiment, the first and second gate terminals 142, 148 of the additional metallic frame 140 extend longitudinally in a first lateral direction (y-direction in the Fig. 4 to Fig. 5C) and the part of each power terminal 122, 124, 126 of the multi-level metallic frame 120 that is exposed on the side of the potting compound 118 facing away from the patterned substrate metallization 104 extends longitudinally in a second lateral direction (x-direction in the Fig. 4 to Fig. 5C), which runs transverse to the first lateral direction.

[0038] As in the Fig. 4 to Fig. As shown in Figure 5C, an intermediate portion 152_1 of the third metallic island 152 of the patterned substrate metallization 104 is arranged laterally between the first metallic island 112 of the patterned substrate metallization 104 and an intermediate portion 156_1 of the fourth metallic island 156 of the patterned substrate metallization 104. The intermediate portion 156_1 of the fourth metallic island 156 of the patterned substrate metallization 104 is arranged laterally between the second metallic island 116 of the patterned substrate metallization 104 and the intermediate portion 152_1 of the third metallic island 152 of the patterned substrate metallization 104.

[0039] Fig. 5B shows the power terminals 122, 124, 126 of the multi-level metallic frame 120 attached to the corresponding pads 128, 130 of the respective dies 110, 114 and to the respective metallic islands 112, 116 of the patterned substrate metallization 104. The power terminals 122, 124, 126 of the multi-level metallic frame 120 may be attached by soldering, diffusion soldering, brazing, welding, gluing, adhering, etc.

[0040] Fig. 5C shows the power module 100 after the molding process. The molding compound 118 at least partially embeds the substrate 102, the first power semiconductor dies 110, and the second power semiconductor dies 114. The multi-level metallic frame 120 is partially embedded in the molding compound 118, so that the power terminals 122, 124, 126 of the multi-level metallic frame 120 are aligned for contact on the front (top) side of the molding compound 118 in the z-direction. Fig. 2C, which reduces the length of the power terminals 122, 124, 126 and thus the stray inductance of the module. The signal terminals 142, 148, 160, 164, 172, 174 of the additional metallic frame 140 protrude from a side surface 144 of the molding compound 118, so that the power terminals 122, 124, 126 and the signal terminals 142, 148, 160, 164, 172, 174 are externally accessible on different sides of the power module 100.

[0041] As in Fig. 4 to Fig. As shown in Figure 5C, the multi-level metallic frame 120 may be laterally confined to the footprint of the molding compound 118. That is, the multi-level metallic frame 120 may not extend laterally in the x-direction or y-direction beyond the outer edge or perimeter of the molding compound 118. Such a configuration further reduces the length of at least some of the power terminals 122, 124, 126, thereby correspondingly reducing the stray inductance of the module.

[0042] In Fig. 1A to Fig. 5C, the first DC terminal 122 of the multi-level metallic frame 120 may be arranged between the second DC terminal 124 and the phase terminal 126 of the multi-level metallic frame 120 in the first (exposed) plane L1, e.g., as shown in Fig. 1A to Fig. 3C. In another embodiment, the phase terminal 126 of the multi-level metallic frame 120 may be arranged between the first and second DC terminals 122, 124 of the multi-level metallic frame 120 in the first (exposed) plane L1, e.g., as shown in Fig. 4 to Fig. 5C. In yet another embodiment, the second DC terminal 124 of the multi-level metallic frame 120 may be arranged between the first DC terminal 122 and the phase terminal 126 of the multi-level metallic frame 120 in the first (exposed) plane L1. In each of these embodiments, the exposed portion of the power terminals 122, 124, 126 of the multi-level metallic frame 120 may be longitudinally aligned in the y-lateral direction (e.g., as shown in Fig. 2C) or the x-lateral direction (e.g. as shown in Fig. 5C).

[0043] In Fig. 1A to Fig. 5C, the first DC terminal 122, the second DC terminal 124, and the phase terminal 126 of the multi-level metallic frame 120 are each exposed along the side of the encapsulant 118 facing away from the patterned substrate metallization 104. Such a terminal configuration enables surface mounting of the power module 100 to a busbar. However, the power module 100 may have other power terminal connection configurations for connection to a busbar, as described next in connection with Fig. 6 to Fig. 9 described.

[0044] Fig. 6 illustrates a perspective side view of the power module according to one embodiment. In Fig. 6, the first DC terminal 122, the second DC terminal 124, and the phase terminal 126 of the multi-level metallic frame 120 each protrude from the side of the encapsulant 118 facing away from the patterned substrate metallization 104. The protruding portion of the power terminals 122, 124, 126 forms a tab-like interface for connecting to a busbar.

[0045] Fig. Figure 7 illustrates a perspective side view of the power module according to one embodiment. Fig. 7, the first DC terminal 122, the second DC terminal 124 and the phase terminal 126 of the multi-stage metallic frame 120 form the same tab-like interface as in Fig. 6, but the tabs can have different profiles and optional holes 200 for connecting to a busbar.

[0046] Fig. Figure 8 illustrates a perspective side view of the power module according to one embodiment. Fig. 8, the first DC terminal 122, the second DC terminal 124, and the phase terminal 126 of the multi-level metallic frame 120 each have an exposed screw, bolt, press-fit, or rivet connector 202 protruding from the side of the encapsulant 118 facing away from the patterned substrate metallization 104. That is, the protruding connector portion 202 of the power terminals 122, 124, 126 may be in the form of a screw, bolt, press-fit pin, or rivet and provide an interface for connecting to a busbar.

[0047] Fig. 9 illustrates a perspective side view of the power module according to one embodiment. In Fig. 9, the first DC terminal 122, the second DC terminal 124, and the phase terminal 126 of the multi-level metallic frame 120 each have an exposed screw, bolt, press-fit, or rivet surface connector 204 formed in the exposed portion of the terminals 122, 124, 126 on the side of the encapsulant 118 facing away from the patterned substrate metallization 104. That is, the exposed surface connector 204 of the power terminals 122, 124, 126 may be in the form of a hole for receiving a screw, bolt, press-fit pin, or rivet and provide an interface for connecting to a busbar.

[0048] Fig. 10 illustrates a partial cross-sectional view of the power module 100 in the region of a single-screw or bolt-type power terminal connector 202 protruding from the side of the encapsulant 118 facing away from the patterned substrate metallization 104. The protruding screw or bolt power terminal connector 202 is in the shape of a screw or bolt and provides an interface for connecting to a busbar. The protruding screw or bolt power terminal connector 202 may be soldered, welded, brazed, screwed, or riveted to the corresponding power terminal of the multi-level metallic frame 120.

[0049] In Fig. 10, the above screw or bolt power terminal connector 202 is shown with a rivet or press-fit bolt connection to the second DC terminal 124 of the multi-level metallic frame 120. For example, a rivet connection may be implemented using a rivet nut 204 that is fully inserted and seated from one side of the second DC terminal 124 of the multi-level metallic frame 120. The rivet nut 204 has an internal thread that provides a secure mounting for a threaded bolt 206. Instead, friction drilling may be used to create an opening in the second DC terminal 124 of the multi-level metallic frame 120 and screw or press-fit the bolt 206 into the opening.Still other techniques may be used to provide any of the power terminals 122, 124, 126 of the multi-level metallic frame 120 with a screw, bolt, press-fit, or rivet connector.

[0050] The other power terminals 122, 126 of the multi-stage metallic frame 120 can also Fig. 10, or another type of connector for connecting to a busbar. More generally, the power terminals 122, 124, 126 of the multi-level metallic frame 120 may use the same or different busbar connector types.

[0051] Fig. Figure 11 illustrates a partial cross-sectional view of the power module 100 in the region of forming a laser-welded busbar connection with the second power terminal 124 of the multi-level metallic frame 120 on the side of the molding compound 118 facing away from the patterned substrate metallization 104. The exposed portion of the second power terminal 124 is connected to a busbar that is Fig. 11 is not shown, laser welded 300. In one embodiment, the molding compound 118 has an undercut 302 in each region where the power terminals 122, 124, 126 of the multi-level metallic frame 120 are exposed on the side of the molding compound 118 facing away from the patterned substrate metallization 104. The undercut 302 enables laser welding 300 without damaging the molding compound 118.

[0052] Fig. 12 illustrates a partial cross-sectional view of the power module 100 in the region of forming a laser-welded busbar connection with the second power terminal 124 of the multi-level metallic frame 120 on the side of the molding compound 118 facing away from the patterned substrate metallization 104, according to another embodiment. A thermally insulating film / coating 400 may be provided on the underside of each power terminal 122, 124, 126 of the multi-level metallic frame 120 being laser-welded 300 to protect the adjacent molding compound 118 during the laser welding 300. The thermally insulating film / coating 400 may be a standard thermal interface material, such as thermal grease, polyimide film, etc. Another non-metallic material with good thermal capacity could be attached to the bottom to store / buffer thermal energy generated during laser welding.The molding compound 118 may or may not have the undercut 302 in any region where the power terminals 122, 124, 126 of the multi-level metallic frame 120 are exposed and laser welded 300 on the side of the molding compound 118 facing away from the patterned substrate metallization 104.

[0053] The Fig. 1A to Fig. The power module 100 illustrated in Figure 12 may be included on a power electronics assembly. The power electronics assembly may include a plurality of power modules 100, e.g., to power two or more phases of a multi-phase load, such as a motor drive system. The power modules 100 are connected to a busbar that carries power between the power modules 100 and the load.

[0054] Fig. Figure 13 illustrates a top view of a power electronics assembly 500 according to one embodiment. In the illustrated example, the power electronics assembly 500 drives a load (not shown) having three phases U, V, W, e.g., such as a motor drive system. Fig. 13, the power electronics assembly 500 includes a single power module 100 for each phase U, V, W of the load. The exposed portion of the power terminals 122, 124, 126 of each power module 100 is connected to a busbar 502. The busbar 502 includes a first metallic strip or bar 504 that provides DC+ potential to the exposed portion of the first power terminal 122 of each power module 100. The busbar 502 also includes a second metallic strip or bar 506 that provides DC- potential to the exposed portion of the second power terminal 124 of each power module 100. The busbar 502 further includes a separate metallic strip or bar 508_n that forms the respective phase connection (U, V, or W) to the exposed portion of the phase (AC) terminal 126 of each power module 100, where n corresponds to the individual phases supported by the power electronics assembly 500.The power modules 100 may include any of the connector types described hereinbefore to facilitate connection to the bus bar 502.

[0055] The power electronics assembly 500 also includes a control board 110, which has the gate driver and control circuitry for driving and controlling the power semiconductor dies 110, 114 included in the power modules 100. The control board 110 is connected to the terminals of the power modules 100, which are provided by the additional metallic frame 140 included in the modules 100. The control board 110 can be connected to the terminals of the power modules 100 by soldering, brazing, press-fitting, etc. The metallization 108 on the underside of the power modules 100 can be contacted by a heat exchanger 512, such as an actively or passively cooled heat sink, to extract heat dissipated by the power semiconductor dies 110, 114 during operation. The busbar 502, the control board 510 and the heat exchanger 512 are in Fig. 13 is schematically illustrated as dashed rectangles to provide an unobstructed view of the interface between the power modules 100 and the busbar 502, the control board 510 and the heat exchanger 512.

[0056] Fig. 14 illustrates a top view of the power electronics assembly 500 according to another embodiment. In Fig. 14, the power electronics assembly 500 includes two power modules 100 for each phase U, V, W of the load. More generally, the power electronics assembly 500 may include one or more of the power modules 100 per phase U, V, W, where the number of modules per phase depends on the phase current requirement and the current rating of the power modules 100.

[0057] Although the present disclosure is not so limited, the following numbered examples illustrate one or more aspects of the disclosure.

[0058] Example 1. A power module comprising: a substrate having a patterned metallization on an electrically insulating body; a plurality of first power semiconductor dies attached to a first metallic island of the patterned metallization; a plurality of second power semiconductor dies attached to a second metallic island of the patterned metallization; a molding compound at least partially embedding the substrate, the first power semiconductor dies, and the second power semiconductor dies;and a multi-level metallic frame partially embedded in the molding compound and disposed over the substrate, the multi-level metallic frame comprising a plurality of power terminals exposed on a side of the molding compound facing away from the patterned metallization and transitioning between two or more different levels to electrically connect the first power semiconductor dies and the second power semiconductor dies in a half-bridge or full-bridge configuration;

[0059] Example 2. The power module according to Example 1, wherein the power module has a stray inductance below 5 nH.

[0060] Example 3. The power module according to example 1 or 2, wherein the multi-stage metallic frame is laterally confined to a base area of ​​the substrate.

[0061] Example 4. The power module of any one of examples 1 to 3, wherein the plurality of power terminals of the multi-stage metallic frame comprises a first DC terminal, a second DC terminal, and a phase terminal.

[0062] Example 5. The power module of example 4, wherein the first DC terminal transitions from a first level to a second level, wherein the second DC terminal transitions from the first level to a third level located between the first level and the second level, wherein the phase terminal transitions from the first level to the third level and to the second level, wherein in the first level the first DC terminal, the second DC terminal, and the phase terminal are each uncovered by the encapsulant.

[0063] Example 6. The power module of example 5, wherein in the second level the first DC terminal is attached to the first metallic island of the structured metallization and the phase terminal is attached to the second metallic island of the structured metallization, wherein in the third level the second DC terminal is attached to a load pad of the second power semiconductor chips and the phase terminal is attached to a load pad of the first power semiconductor chips.

[0064] Example 7. The power module of Example 6, wherein the first power semiconductor chips are power MOSFET dies, each having a drain pad attached to the first metallic island of the patterned metallization on a first side of the first power semiconductor chips, and a source pad and a gate pad on a second side opposite the first side, wherein the second power semiconductor chips are power MOSFET dies, each having a drain pad attached to the second metallic island of the patterned metallization on a first side of the second power semiconductor chips, and a source pad and a gate pad on a second side opposite the first side, wherein in the third level, the second DC terminal is attached to the source pad of the second power semiconductor chips and the phase terminal is attached to the source pad of the first power semiconductor chips.

[0065] Example 8. The power module of example 6 or 7, wherein the first DC terminal vertically overlaps a portion of the second DC terminal attached to the load pad of the second power semiconductor chips.

[0066] Example 9. The power module according to any one of examples 5 to 8, wherein in the first plane the first DC terminal is arranged between the second DC terminal and the phase terminal.

[0067] Example 10. The power module according to any one of examples 5 to 9, wherein in the first plane the second DC terminal is arranged between the first DC terminal and the phase terminal.

[0068] Example 11. The power module according to any one of examples 5 to 10, wherein in the first plane the phase connection is arranged between the first DC connection and the second DC connection.

[0069] Example 12. The power module according to any one of examples 5 to 11, wherein the first metallic island and the second metallic island of the structured metallization have a longitudinal extension in a first lateral direction, and wherein in the first plane the first DC terminal, the second DC terminal and the phase terminal each have a longitudinal extension in the first lateral direction.

[0070] Example 13. The power module of any one of examples 5 to 12, wherein the first DC terminal vertically overlaps a portion of the phase terminal attached to the second metallic island of the patterned metallization.

[0071] Example 14. The power module of any one of examples 4 to 13, wherein the first DC terminal, the second DC terminal, and the phase terminal are each exposed along the side of the potting compound facing away from the patterned metallization.

[0072] Example 15. The power module of any one of examples 4 to 13, wherein the first DC terminal, the second DC terminal, and the phase terminal each protrude from the side of the potting compound facing away from the patterned metallization.

[0073] Example 16. The power module of examples 4 to 15, wherein the first DC terminal, the second DC terminal, and the phase terminal each have an exposed screw, bolt, press-fit, or rivet connector on the side of the potting compound facing away from the patterned metallization.

[0074] Example 17. The power module of any one of examples 4 to 16, wherein the encapsulant has an undercut in each region where the first DC terminal, the second DC terminal, and the phase terminal are exposed on the side of the encapsulant facing away from the patterned metallization.

[0075] Example 18. The power module of any one of Examples 1 to 17, further comprising: an additional metallic frame partially embedded in the encapsulant and comprising: a first gate terminal protruding from a side surface of the encapsulant and running along a first edge of the substrate; and a second gate terminal protruding from the side surface of the encapsulant and running along a second edge of the substrate opposite the first edge, wherein the first gate terminal is electrically connected to a third metallic island of the patterned metallization, and the third metallic island is electrically connected to a gate pad of the first power semiconductor dies, wherein the second gate terminal is electrically connected to a fourth metallic island of the patterned metallization, and the fourth metallic island is electrically connected to a gate pad of the second power semiconductor dies.

[0076] Example 19. The power module of Example 18, wherein the third metallic island of the patterned metallization is laterally disposed between the first edge of the substrate and the first metallic island of the patterned metallization, and wherein the fourth metallic island of the patterned metallization is laterally disposed between the second edge of the substrate and the second metallic island of the patterned metallization.

[0077] Example 20. The power module of example 18, wherein the third metallic island and the fourth metallic island of the structured metallization are arranged laterally between the first metallic island and the second metallic island of the structured metallization.

[0078] Example 21. The power module of Example 20, wherein an intermediate portion of the third metallic island of the structured metallization is laterally disposed between the first metallic island of the structured metallization and an intermediate portion of the fourth metallic island of the structured metallization, and wherein the intermediate portion of the fourth metallic island of the structured metallization is laterally disposed between the second metallic island of the structured metallization and the intermediate portion of the third metallic island of the structured metallization.

[0079] Example 22. The power module of any one of examples 18 to 21, wherein the first gate terminal and the second gate terminal extend longitudinally in a first lateral direction, and wherein the portion of each power terminal exposed on the side of the encapsulant facing away from the patterned metallization extends longitudinally in the first lateral direction.

[0080] Example 23. The power module of any one of examples 18 to 21, wherein the first gate terminal and the second gate terminal extend longitudinally in a first lateral direction, and wherein the portion of each power terminal exposed on the side of the encapsulant facing away from the patterned metallization extends longitudinally in a second lateral direction transverse to the first lateral direction.

[0081] Example 24. Power module according to any one of Examples 1 to 23, wherein the multi-stage metallic frame is laterally confined to a base area of ​​the molding compound.

[0082] Example 25. A power electronics assembly for supplying power to a multi-phase load, the power electronics assembly comprising: one or more power modules for each phase of the multi-phase load, each power module comprising: a substrate having a patterned metallization on an electrically insulating body; a plurality of first power semiconductor dies attached to a first metallic island of the patterned metallization; a plurality of second power semiconductor dies attached to a second metallic island of the patterned metallization; a molding compound at least partially embedding the substrate, the first power semiconductor dies, and the second power semiconductor dies;and a multi-level metallic frame partially embedded in the molding compound and disposed over the substrate, the multi-level metallic frame comprising a plurality of power terminals exposed on a side of the molding compound facing away from the patterned metallization and transitioning between two or more different levels to electrically connect the first power semiconductor dies and the second power semiconductor dies in a half-bridge or full-bridge configuration, the power electronics assembly further comprising a bus bar connected to the exposed portion of the power terminals of the power modules.;

[0083] Example 26. The power electronics assembly of Example 25, wherein each power module further comprises an additional metallic frame partially embedded in the molding compound and comprising: a first gate terminal protruding from a side surface of the molding compound and running along a first edge of the substrate; and a second gate terminal protruding from the side surface of the molding compound and running along a second edge of the substrate opposite the first edge, wherein the first gate terminal is electrically connected to a third metallic island of the patterned metallization, and the third metallic island is electrically connected to a gate pad of the first power semiconductor dies, wherein the second gate terminal is electrically connected to a fourth metallic island of the patterned metallization, and the fourth metallic island is electrically connected to a gate pad of the second power semiconductor dies,wherein the power electronics assembly further comprises a control board having a gate driver and a control circuit for driving and controlling the power semiconductor dies included in the power modules, and wherein the control board is connected to the terminals of the power modules provided by the additional metallic frame included in the power modules.

[0084] Terms such as "first," "second," and the like are used to describe various elements, regions, sections, etc., and are also not intended to be limiting. Like terms refer to like elements throughout the specification.

[0085] As used herein, the terms "comprising," "containing," "including," "comprising," and the like are open-ended terms that indicate the presence of the specified elements or features but do not preclude additional elements or features. The articles "a," "an," and "the" are intended to include both the plural and singular unless the context clearly indicates otherwise.

[0086] The expression "and / or" should be interpreted to cover all possible conjunctive and disjunctive combinations, unless explicitly stated otherwise. For example, the expression "A and / or B" should be interpreted to mean only A, only B, or both A and B. The expression "at least one of" should be interpreted in the same way as "and / or" unless explicitly stated otherwise. For example, the expression "at least one of A and B" should be interpreted to mean only A, only B, or both A and B.

[0087] It is understood that the features of the various embodiments described herein may be combined with one another unless expressly stated otherwise.

[0088] Although specific embodiments have been illustrated and described herein, those skilled in the art will recognize that a variety of alternative and / or equivalent implementations may be substituted for the specific embodiments shown and described without departing from the scope of the present invention. This application is intended to cover any adaptations or variations of the specific embodiments discussed herein. Therefore, it is intended that this invention be limited only by the claims and their equivalents.

Claims

[1] Power module (100), comprising: a substrate (102) comprising a patterned metallization on an electrically insulating body; a plurality of first power semiconductor dies (110) attached to a first metallic island (112) of the patterned metallization; a plurality of second power semiconductor dies (114) attached to a second metallic island (116) of the patterned metallization; a molding compound (118) that at least partially embeds the substrate (102), the first power semiconductor dies (110) and the second power semiconductor dies (114); and a multi-stage metallic frame (120) partially embedded in the molding compound (118) and arranged above the substrate (102), wherein the multi-level metallic frame (120) comprises a plurality of power terminals (122, 124, 126) exposed on a side of the molding compound (118) facing away from the patterned metallization and transitioning between two or more different levels to electrically connect the first power semiconductor dies (110) and the second power semiconductor dies (114) in a half-bridge or full-bridge configuration. [2] The power module (100) of claim 1, wherein the power module (100) has a stray inductance below 5 nH. [3] The power module (100) of claim 1 or 2, wherein the multi-stage metallic frame (120) is laterally confined to a base surface of the substrate (102). [4] The power module (100) of any preceding claim, wherein the plurality of power terminals (122, 124, 126) of the multi-stage metallic frame (120) comprises a first DC terminal (122), a second DC terminal (124), and a phase terminal (126). [5] Power module (100) according to claim 4, wherein the first DC connection (122) transitions from a first level to a second level, wherein the second DC connection (124) transitions from the first level to a third level located between the first level and the second level, wherein the phase connection (126) transitions from the first level to the third level and to the second level, wherein in the first plane the first DC terminal (122), the second DC terminal (124) and the phase terminal (126) are each uncovered by the potting compound (118). [6] Power module (100) according to claim 5, wherein in the second plane the first DC connection (122) is attached to the first metallic island (112) of the structured metallization and the phase connection (126) is attached to the second metallic island (116) of the structured metallization, wherein in the third level the second DC terminal (124) is attached to a load pad (128) of the second power semiconductor chips (114) and the phase terminal (126) is attached to a load pad (130) of the first power semiconductor chips (110). [7] Power module (100) according to claim 6, wherein the first power semiconductor chips (110) are power MOSFET dies, each having a drain pad (132) attached to the first metallic island (112) of the patterned metallization on a first side of the first power semiconductor chips (110), and a source pad (130) and a gate pad (134) on a second side opposite the first side, wherein the second power semiconductor chips (114) are power MOSFET dies, each having a drain pad (136) attached to the second metallic island (116) of the patterned metallization on a first side of the second power semiconductor chips (114), and a source pad (128) and a gate pad (138) on a second side opposite the first side, wherein in the third level the second DC terminal (124) is attached to the source pad (128) of the second power semiconductor chips (114) and the phase terminal (126) is attached to the source pad (130) of the first power semiconductor chips (110). [8] The power module (100) of claim 6 or 7, wherein the first DC terminal (122) vertically overlaps a portion (124_1) of the second DC terminal (124) attached to the load pad (128) of the second power semiconductor chips (114). [9] Power module (100) according to one of claims 5 to 8, wherein in the first plane the first DC connection (122) is arranged between the second DC connection (124) and the phase connection (126), and / or wherein in the first plane the second DC connection (124) is arranged between the first DC connection (122) and the phase connection (126), and / or wherein in the first plane the phase connection (126) is arranged between the first DC connection (122) and the second DC connection (124). [10] Power module (100) according to one of claims 5 to 9, wherein the first metallic island (112) and the second metallic island (116) of the structured metallization have a longitudinal extension in a first lateral direction, and wherein in the first plane the first DC terminal (122), the second DC terminal (124) and the phase terminal (126) each have a longitudinal extension in the first lateral direction. [11] The power module (100) of any one of claims 5 to 10, wherein the first DC terminal (122) vertically overlaps a portion (126_1) of the phase terminal (126) attached to the second metallic island (116) of the patterned metallization. [12] Power module (100) according to one of claims 4 to 11, wherein the first DC connection (122), the second DC connection (124) and the phase connection (126) each extend along the side of the potting compound (118) facing away from the structured metallization, or wherein the first DC terminal (122), the second DC terminal (124) and the phase terminal (126) each protrude from the side of the potting compound (118) facing away from the structured metallization. [13] The power module (100) of any one of claims 4 to 12, wherein the first DC terminal (122), the second DC terminal (124) and the phase terminal (126) each comprise an exposed screw, bolt, press-fit or rivet connector on the side of the potting compound (118) facing away from the patterned metallization. [14] Power module (100) according to one of claims 4 to 13, wherein the potting compound (118) has an undercut in each region in which the first DC terminal (122), the second DC terminal (124) and the phase terminal (126) are exposed on the side of the potting compound (118) facing away from the structured metallization. [15] Power module (100) according to one of the preceding claims, further comprising: an additional metallic frame (140) partially embedded in the potting compound (118) and comprising: a first gate terminal (142) projecting from a side surface (144) of the potting compound (118) and extending along a first edge (146) of the substrate (102); and a second gate terminal (148) projecting from the side surface (144) of the potting compound (118) and extending along a second edge (150) of the substrate (102) opposite the first edge (146), wherein the first gate terminal (142) is electrically connected to a third metallic island (152) of the structured metallization and the third metallic island (152) is electrically connected to a gate pad (134) of the first power semiconductor dies (110), wherein the second gate terminal (148) is electrically connected to a fourth metallic island (156) of the structured metallization and the fourth metallic island (156) is electrically connected to a gate pad (138) of the second power semiconductor die (114). [16] Power module (100) according to claim 15, wherein the third metallic island (152) of the structured metallization is arranged laterally between the first edge (146) of the substrate (102) and the first metallic island (112) of the structured metallization, and wherein the fourth metallic island (156) of the structured metallization is arranged laterally between the second edge (150) of the substrate (102) and the second metallic island (116) of the structured metallization. [17] The power module (100) of claim 15, wherein the third metallic island (152) and the fourth metallic island (156) of the structured metallization are arranged laterally between the first metallic island (112) and the second metallic island (116) of the structured metallization. [18] Power module (100) according to claim 17, wherein an intermediate part (152_1) of the third metallic island (152) of the structured metallization is arranged laterally between the first metallic island (112) of the structured metallization and an intermediate part (156_1) of the fourth metallic island (156) of the structured metallization, and wherein the intermediate part (156_1) of the fourth metallic island (156) of the structured metallization is arranged laterally between the second metallic island (116) of the structured metallization and the intermediate part (152_1) of the third metallic island (152) of the structured metallization. [19] Power module (100) according to one of claims 15 to 18, wherein the first gate terminal (142) and the second gate terminal (148) extend longitudinally in a first lateral direction, and wherein the portion of each power terminal (122, 124, 126) exposed on the side of the potting compound (118) facing away from the patterned metallization extends longitudinally in the first lateral direction. [20] Power module (100) according to one of claims 15 to 19, wherein the first gate terminal (142) and the second gate terminal (148) extend longitudinally in a first lateral direction, and wherein the portion of each power terminal (122, 124, 126) exposed on the side of the potting compound (118) facing away from the patterned metallization extends longitudinally in a second lateral direction transverse to the first lateral direction.

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