Multi-phase power inverter for an electric drive system with nested topology for counter-inductivity suppression

Abstract

A multiphase power inverter containing several X-type multistage power converters designed to transfer electrical power between a high-voltage direct current (HVDC) supply and an electrical machine. Each of the multiple X-type multistage power converters is configured as a solid-state integrated circuit (SEC) containing folded branches that include multiple semiconductor switches and clamping diodes. The multiple semiconductor switches, a positive DC power bus, a negative DC power bus, a first AC bus, a second AC bus, a third AC bus, a fourth AC bus, and the clamping diodes are arranged in multiple stages.Such that both the positive DC power bus and the negative DC power bus are parallel to the neutral bus, which generates mutual inductance rejection that minimizes parasitic inductance by coupling the positive mutual inductance and the negative mutual inductance for commutation loop currents in each of the X-type multi-stage converters.

Description

INTRODUCTION

[0001] The concepts described here generally relate to vehicles employing an electrified powertrain or electrified propulsion systems formed by direct current (DC) power supplies that provide DC electrical power, which is converted into alternating current (AC) electrical power by means of multiphase power inverters to control the operation of one or more electric machines. In particular, the invention relates to a multiphase power inverter for an electric propulsion system.

[0002] For general background information, please refer to the article “Operating Principle of Neutral Point-Less (NPL) Multilevel Inverter Topology: X-type Inverter”, by M. Guven, M. Benson, X. Dong, J. Moon and W. Lee (2022 IEEE Transportation Electrification Conference & Expo (ITEC), Anaheim, CA, USA, 2022, pp. 345-350).

[0003] Furthermore, reference is made here to the publications DE 10 2023 104 213 A1, US 2023 / 0 238 895 A1, DE 10 2024 100 713 A1, DE 10 2024 100 712 A1 and DE 10 2023 128 172 A1. From DE 10 2023 104 213 A1, it is known to arrange the busbars of an inverter in such a way as to minimize parasitic inductances.

[0004] High-voltage and high-power multi-stage inverters (high-voltage and high-power MLIs) have gained attention as the transportation electrification trend rapidly expands from consumer and commercial vehicles to high-capacity urban transportation systems such as electric aircraft, trains, and ships. MLIs such as clamped neutral point (NPC) and X-type inverters provide high-voltage and high-power operating capabilities; however, they incorporate stacked DC link capacitors with a neutral point connection for a zero-voltage vector. This neutral point connection to the stacked DC link capacitor can generate a neutral current that oscillates at three times the fundamental frequency, potentially causing capacitor voltage imbalance and overvoltage stress on capacitors and switching devices.

[0005] A multiphase power inverter circuit can create an inherent power loop in which a large current flows from a DC link capacitor to a high-side (HS) of the multiphase power inverter, then to a low-side (LS) of the multiphase power inverter, and back. This power loop can generate magnetic fields and form a parasitic loop inductance.

[0006] The current flow path determines the size of the power loop, which in turn determines the size of the generated magnetic field and therefore the size of the parasitic inductance. The current flow path is defined by the circuit topology, which is why the circuit topology can influence the size of the parasitic loop inductance and the parasitic leakage inductance. SUMMARY

[0007] In light of the above discussion, it is useful to develop a system for integrating power semiconductor devices containing selective active and passive vertical and / or lateral semiconductor chips to provide mutual inductance suppression for a multiphase power inverter containing multiple X-type multistage power converters having a nested topology that reduces parasitic inductance in the multiphase power inverter and / or in each X-type multistage power converter.

[0008] The concepts revealed here relate to a system for a multi-phase power inverter that includes several X-type multi-stage power converters featuring nested topologies capable of achieving mutual inductance rejection.

[0009] The nested topologies pair semiconductor switches and their respective buses on top of or next to each other, couple the positive bus (P-bus) and the negative bus (N-bus) and synchronize the switching of the semiconductor switch pairs to suppress their electromagnetic fields in order to reduce their inductances, which include parasitic loop and stray inductances, bearing current, motor insulation voltage and electromagnetic interference (EMI).

[0010] The nested topologies can reduce the gate loop, power commutation loop, and overall loop area of ​​the X-type multi-stage power converter, which can reduce parasitic inductance, switch losses, and ringing, and lower the setup stress.

[0011] Such a system can be used in vehicles that have an electrified propulsion system, e.g., a motor vehicle that has an electrified powertrain or an electrified propulsion system, e.g., an electric vehicle (EV) or a plug-in hybrid electric vehicle (PHEV), or another mobile platform that can be powered by an electric propulsion system, to reduce parasitic inductance in the multiphase power inverter.

[0012] Each multiphase power inverter can contain multiple X-type multistage power converters designed to connect a high-voltage direct current (HVDC) power source to an electrical machine. The number of X-type multistage power converters required depends on the application.

[0013] Each X-type multi-stage power converter can be configured as a solid-state integrated circuit (solid-state IC) containing several circuit components, such as semiconductor switches and busbars, connected to form a network of connections through which current can flow. The shape of this network of connected circuit arrangements is called a circuit topology.

[0014] Nested circuit topologies can be used to connect multiple inverters and / or converters to achieve system-level objectives, e.g., reduced parasitic inductance in an X-type multi-stage power converter and / or a multi-phase power inverter.

[0015] Ceramics, a printed circuit board (PCB), or a cold plate may be included between folded branches of the X-type multi-stage power converter to provide double-sided and / or single-sided cooling of the X-type multi-stage power converter.

[0016] The concepts described here provide a multiphase power inverter advantageously designed to minimize stray inductance and loop inductance through magnetic field suppression. This involves using field suppression by designing positive, neutral, and negative buses and multiple X-type multistage power converters implemented in solid-state integrated circuits with side-split elements. The side-split arrangement of the X-type multistage power converters allows for either single-sided or double-sided cooling to reduce thermal impedance. This configuration can further reduce stray inductance, resulting in lower switching losses, less ringing, less electromagnetic interference (EMI), and reduced equipment heat load.

[0017] A multiphase power inverter can contain several X-type multistage power converters designed to transfer electrical power between a high-voltage direct current (HVDC) power source and an electrical machine. Each of the multiple X-type multistage power converters can be configured as a solid-state integrated circuit (solid-state IC) that may include a first branch and a second branch.

[0018] Each of the first branch and the second branch can contain a positive DC power bus, a negative DC power bus, a neutral bus, a first AC bus, a second AC bus, a first conductive layer, and a second conductive layer.

[0019] An X-type multistage converter can include a first branch, a second branch, power module substrates, and heat sinks. Each of the first and second branches can be positioned adjacent to the respective first sides of the power module substrates. Each of the heat sinks can be positioned adjacent to the respective second sides of the power module substrates.

[0020] The first branch can be connected to the second branch by one or more connections, which may contain one or more connections that electrically connect the first branch and the second branch.

[0021] A first branch of an X-type multi-stage power converter can be arranged adjacent to the first side of a power module substrate. A second branch of the X-type multi-stage power converter can also be arranged adjacent to the first side of a power module substrate.

[0022] The first branch and the second branch can contain multiple semiconductor switches arranged in a staggered configuration on power module substrates.

[0023] The multiple semiconductor switches can include a first semiconductor switch, a second semiconductor switch, a third semiconductor switch, a fourth semiconductor switch, a fifth semiconductor switch, a sixth semiconductor switch, a seventh semiconductor switch, and an eighth semiconductor switch.

[0024] The first branch of the X-type multi-stage power converter may include a positive DC power bus, a negative DC power bus, a first AC bus, a second AC power bus, a first clamping diode, a first conductive layer, a second conductive layer, a first power module substrate, a first heat sink adjacent to a second side of the first power module substrate, several first semiconductor switches including the third semiconductor switch, the fourth semiconductor switch, the fifth semiconductor switch, and the sixth semiconductor switch, and several first conductive spacers.

[0025] The multiple first conductive spacers can be arranged between the fifth semiconductor switch and the positive DC power bus, the sixth semiconductor switch and the first AC bus, the fourth semiconductor switch and the second conductive layer, the third semiconductor switch and the second conductive layer, and the first clamping diode and the second conductive layer.

[0026] The multiple first semiconductor switches, the positive DC power bus of the first branch, the negative DC power bus of the first branch, the first AC bus of the first branch, the second AC bus of the first branch, the first conductive layer of the first branch, the second conductive layer of the first branch, and the first clamping diode can be designed in multiple stages, including a first stage, a second stage, and a third stage.

[0027] The first stage can be formed from the first conductive layer of the first branch, which is designed coplanar with the first negative DC power bus of the first branch, which can be designed coplanar with the second AC bus of the first branch.

[0028] The second stage can be formed from the first clamping diode, which is designed coplanarly with the third semiconductor switch, which is designed coplanarly with the fourth semiconductor switch, which can be designed coplanarly with the fifth semiconductor switch, which can be designed coplanarly with the sixth semiconductor switch.

[0029] The third stage can be formed from the second conductive layer of the first branch, which is designed coplanar with the first positive DC power bus of the first branch, which can be designed coplanar with the first AC bus of the first branch.

[0030] The second branch of the X-type multi-stage power converter can include a positive DC power bus, a negative DC power bus, a first AC bus, a second AC power bus, a first clamping diode, a first conductive layer, a second conductive layer, a first power module substrate, a first heat sink adjacent to a second side of the first power module substrate, several second semiconductor switches including the first semiconductor switch, the second semiconductor switch, the seventh semiconductor switch, and the eighth semiconductor switch, and several second conductive spacers.

[0031] The multiple second conductive spacers can be arranged between the first semiconductor switch and the positive DC power bus, the second semiconductor switch and the second AC bus, the eighth semiconductor switch and the second conductive layer, the seventh semiconductor switch and the second conductive layer, and the second clamping diode and the second conductive layer.

[0032] The multiple second semiconductor switches, the positive DC power bus of the second branch, the negative DC power bus of the second branch, the first AC bus of the second branch, the second AC bus of the second branch, the first conductive layer of the second branch, the second conductive layer of the second branch, and the second clamping diode can be designed in multiple stages, including a first stage, a second stage, and a third stage.

[0033] The first stage can be formed from the first conductive layer of the second branch, which is designed coplanar with the first negative DC power bus of the second branch, which can be designed coplanar with the second AC bus of the second branch.

[0034] The second stage can be formed from the second clamping diode, which is designed coplanar with the first semiconductor switch, which can be designed coplanar with the second semiconductor switch, which can be designed coplanar with the seventh semiconductor switch, which can be designed coplanar with the eighth semiconductor switch.

[0035] The third stage can be formed from the second conductive layer of the second branch, which is designed coplanar with the first positive DC power bus of the second branch, which can be designed coplanar with the first AC bus of the second branch.

[0036] According to one aspect of the invention, the multi-stage power converter can include a first heat sink and a second heat sink.

[0037] The first conductive layer of the first branch, the negative DC power bus of the first branch, and the second AC bus of the first branch can be arranged adjacent to the first side of the first power module substrate.

[0038] The first heat sink can be positioned adjacent to the second side of the first power module substrate.

[0039] The first conductive layer of the second branch, the negative DC power bus of the second branch, and the second AC bus of the second branch can be arranged adjacent to the first side of the second power module substrate.

[0040] The second heat sink can be positioned adjacent to the second side of the second power module substrate.

[0041] The fifth semiconductor switch, the sixth semiconductor switch, the positive DC power bus of the first branch, and the first AC bus of the first branch can be arranged on a first section of the first power module substrate. The first clamping diode and several first gate / source pins can be arranged on a second section of the first power module substrate. The fourth semiconductor switch, the third semiconductor switch, the negative DC bus of the first branch, and the second AC bus of the first branch can be arranged on a third section of the first power module substrate.

[0042] The first, second, and third sections of the first power module substrate can be coplanar. The second section can be positioned between the first and third sections.

[0043] The first semiconductor switch, the second semiconductor switch, the positive DC power bus of the second branch, and the second AC bus of the second branch can be arranged on a first section of the second power module substrate. The second clamping diode and several second gate / source pins can be arranged on a second section of the second power module substrate. The eighth semiconductor switch, the seventh semiconductor switch, the negative DC bus of the second branch, and the first AC bus of the second branch can be arranged on a third section of the second power module substrate.

[0044] The first, second, and third sections of the second power module substrate can be coplanar. The second section can be positioned between the first and third sections.

[0045] According to one aspect of the invention, the multiple first gate / source pins and the multiple second gate / source pins can be configured to pop out vertically from the first power module substrate and the second power module substrate, respectively.

[0046] According to one aspect of the invention, the positive DC power bus of the first branch, the negative DC power bus of the first branch, the positive DC power bus of the second branch, and the negative DC power bus of the second branch can be configured at a first end of the X-type multi-stage power converter. The first AC bus of the first branch, the second AC bus of the first branch, the first AC bus of the second branch, and the second AC bus of the second branch can be configured at a second end of the X-type multi-stage power converter.

[0047] According to one aspect of the invention, each of the multiple first semiconductor switches and the second semiconductor switch can contain a single chip.

[0048] According to one aspect of the invention, each individual chip can contain a vertical arrangement.

[0049] According to one aspect of the invention, each of the multiple first semiconductor switches and the second semiconductor switch contains multiple chips.

[0050] According to one aspect of the invention, all multiple chips contain a vertical arrangement.

[0051] The first branch and the second branch of the X-type multi-stage power converter can be electrically connected by connections designed between the first AC bus of the first branch and the first AC bus of the second branch, and between the second AC bus of the first branch and the second AC bus of the second branch.

[0052] According to a further aspect of the invention, a first branch of an X-type multi-stage power converter can be arranged adjacent to a first side of a power module substrate. A second branch of the X-type multi-stage power converter can also be arranged adjacent to a first side of a power module substrate.

[0053] The first branch and the second branch can contain multiple semiconductor switches arranged in a staggered configuration on power module substrates.

[0054] The multiple semiconductor switches can include a first semiconductor switch, a second semiconductor switch, a third semiconductor switch, a fourth semiconductor switch, a fifth semiconductor switch, a sixth semiconductor switch, a seventh semiconductor switch, and an eighth semiconductor switch.

[0055] The first branch of the X-type multi-stage power converter can include a positive DC power bus, a negative DC power bus, a first AC bus, a second AC power bus, a first clamping diode, a first conductive layer, a second conductive layer, a first power module substrate, a first heat sink adjacent to a second side of the first power module substrate, several first semiconductor switches including the third semiconductor switch, the fourth semiconductor switch, the fifth semiconductor switch, the sixth semiconductor switch, and several first conductive spacers.

[0056] The multiple first conductive spacers can be placed between the first clamping diode and a first section of the first conductive layer.

[0057] The multiple first semiconductor switches, the positive DC power bus of the first branch, the negative DC power bus of the first branch, the first AC bus of the first branch, the second AC bus of the first branch, the first conductive layer of the first branch, the second conductive layer of the first branch, and the first clamping diode can be designed in multiple stages, including a first stage, a second stage, and a third stage.

[0058] The first stage can be formed from the first AC bus of the first branch, which is designed coplanarly with the second AC bus of the first branch, which can be designed coplanarly with the first section of the first conductive layer of the first branch, which can be designed coplanarly with the first positive DC power bus of the first branch, which can be designed coplanarly with the negative DC power bus of the first branch.

[0059] The second stage can be formed from the first clamping diode, which is designed coplanar with the third semiconductor switch, which can be designed coplanar with the fourth semiconductor switch, which can be designed coplanar with the fifth semiconductor switch, which can be designed coplanar with the sixth semiconductor switch.

[0060] The third stage can be formed from a second section of the first conducting layer of the first branch.

[0061] The second branch of the X-type multi-stage power converter can include a positive DC power bus, a negative DC power bus, a first AC bus, a second AC power bus, a second clamping diode, a first conductive layer, a second conductive layer, a first power module substrate, a first heat sink adjacent to a second side of the first power module substrate, several second semiconductor switches including the first semiconductor switch, the second semiconductor switch, the seventh semiconductor switch, and the eighth semiconductor switch, and several second conductive spacers.

[0062] The multiple second conductive spacers can be positioned between the second clamping diode and the first conductive layer.

[0063] The multiple second semiconductor switches, the positive DC power bus of the second branch, the negative DC power bus of the second branch, the first AC bus of the second branch, the second AC bus of the second branch, the first conductive layer of the second branch, the second conductive layer of the second branch, and the second clamping diode can be designed in multiple stages, including a first stage, a second stage, and a third stage.

[0064] The first stage can be formed from the first AC bus of the second branch and can be designed coplanar with the second AC bus of the second branch, which can be designed coplanar with the first section of the first conductive layer of the second branch, which can be designed coplanar with the positive DC power bus of the second branch, which can be designed coplanar with the negative DC power bus of the second branch.

[0065] The second stage can be formed from the second clamping diode, which is designed coplanar with the first semiconductor switch, which can be designed coplanar with the second semiconductor switch, which can be designed coplanar with the seventh semiconductor switch, which can be designed coplanar with the eighth semiconductor switch.

[0066] The third stage can be formed from a second section of the first conducting layer of the second branch.

[0067] According to one aspect of the invention, the multi-stage power converter can include a first heat sink and a second heat sink.

[0068] The first conductive layer of the first branch, the negative DC power bus of the first branch, and the second AC bus of the first branch can be arranged adjacent to the first side of the first power module substrate.

[0069] The first heat sink can be positioned adjacent to the second side of the first power module substrate.

[0070] The first conductive layer of the second branch, the negative DC power bus of the second branch, and the second AC bus of the second branch can be arranged adjacent to the first side of the second power module substrate.

[0071] The second heat sink can be positioned adjacent to the second side of the second power module substrate.

[0072] The fifth semiconductor switch, the sixth semiconductor switch, the first section of a set of first gate / source pins, the first AC bus of the first branch, and the positive DC power bus of the first branch can be arranged on a first section of the first power module substrate. The first clamping diode and a second section of the set of first gate / source pins can be arranged on a second section of the first power module substrate. The third semiconductor switch, the fourth semiconductor switch, a third section of the set of first gate / source pins, the second AC bus of the first branch, and the negative DC power bus of the first branch can be arranged on a third section of the first power module substrate.

[0073] The first, second, and third sections of the first power module substrate can be coplanar. The second section can be positioned between the first and third sections.

[0074] The first semiconductor switch, the second semiconductor switch, the first section of the multiple second gate / source pins, the positive DC power bus of the second branch, and the second AC bus of the second branch can be arranged on a first section of the second power module substrate. The second clamping diode and a second section of the multiple second gate / source pins can be arranged on a second section of the second power module substrate. The eighth semiconductor switch, the seventh semiconductor switch, a third section of the multiple second gate / source pins, the negative DC bus of the second branch, and the first AC bus of the second branch can be arranged on a third section of the second power module substrate.

[0075] The first, second, and third sections of the second power module substrate can be coplanar. The second section can be positioned between the first and third sections.

[0076] According to one aspect of the invention, the multiple first gate / source pins and the multiple second gate / source pins can be configured to pop out vertically from the first power module substrate and the second power module substrate, respectively.

[0077] According to one aspect of the invention, the positive DC power bus of the first branch, the negative DC power bus of the first branch, the positive DC power bus of the second branch and the negative DC power bus of the second branch can be configured at a first end of the X-type multi-stage power converter, and the first AC bus of the first branch, the second AC bus of the first branch, the first AC bus of the second branch and the second AC bus of the second branch can be configured at a second end of the X-type multi-stage power converter.

[0078] According to one aspect of the invention, each of the multiple first semiconductor switches and the second semiconductor switch contains a single chip.

[0079] According to one aspect of the invention, each individual chip contains a lateral device.

[0080] According to one aspect of the invention, each of the multiple first semiconductor switches and the second semiconductor switch contains multiple chips.

[0081] According to one aspect of the invention, each of the multiple chips contains a lateral device.

[0082] The first branch and the second branch of the X-type multi-stage power converter can be electrically connected by connections that can be designed between the first AC bus of the first branch and the first AC bus of the second branch, and between the second AC bus of the first branch and the second AC bus of the second branch.

[0083] By configuring the topology in each of the X-type multi-stage converters as illustrated above, both the positive DC power bus and the negative DC power bus are in parallel with the auxiliary bus or neutral bus, creating mutual inductance rejection that minimizes parasitic inductance by coupling the positive mutual inductance and the negative mutual inductance for commutation loop currents in each of the X-type multi-stage converters.

[0084] Furthermore, the inclusion of clamping diodes internally in the X-type multi-stage converter also reduces the commutation loop in the X-type multi-stage converter.

[0085] The concepts and aspects of the invention described herein enable various heat transfer and cooling systems, including direct cooling, indirect cooling, immersive cooling, single-sided cooling, or double-sided cooling.

[0086] The features and advantages described above, as well as further features and concomitant advantages of this invention, will become apparent from the following detailed description of illustrative examples and modes of carrying out the present invention when considered in conjunction with the accompanying drawings and the attached claims. Furthermore, this invention expressly includes combinations and subcombinations of the elements and features illustrated above and below. BRIEF DESCRIPTION OF THE DRAWINGS

[0087] The accompanying drawings, which are included in and form part of this application, illustrate implementations of the invention which, together with the description, serve to explain the principles of the invention; they show: Fig. 1 schematically an electric drive train system comprising a multi-phase power inverter designed between a high-voltage direct current power source (high-voltage DC power source) and an electric machine, according to the invention; Fig. 2 schematically an electric drive train system comprising a multi-phase power inverter having several multi-stage power converters of the X type, arranged between a high-voltage direct current source and an electric machine, according to the invention; Fig. 3 schematically an electrical circuit diagram of a multi-stage power converter of the X type, designed as an integrated solid-state circuit (solid-state IC), according to one aspect of the invention; Fig. 4 schematically a side view of a multi-stage power converter of the X type, which has a first branch and a second branch and is designed as a solid-state IC; Fig. 5A schematically a top view of a first branch of an X-type multi-stage power converter, which is in Fig. 4 is schematically illustrated and contains several semiconductor switches, each comprising a single chip, according to one aspect of the invention; Fig. 5B schematically a side section view of the first branch through section BB of Fig. 5A of the X-type multi-stage power converter, which is in Fig. 4 is schematically illustrated and contains several semiconductor switches, each comprising a single chip, according to one aspect of the invention; Fig. 5C schematically a side section view of the first branch through section CC of Fig. 5A of the X-type multi-stage power converter, which is in Fig. 4 is schematically illustrated and contains several semiconductor switches, each comprising a single chip, according to one aspect of the invention; Fig. 5D schematic top view of a second branch of an X-type multi-stage power converter, which is in Fig. 4 is schematically illustrated and contains several semiconductor switches, each comprising a single chip, according to one aspect of the invention; Fig. 5E schematically a side section view of the second branch through section EE of Fig. 5D of the X-type multi-stage power converter, which is in Fig. 4 is schematically illustrated and contains several semiconductor switches, each comprising a single chip, according to one aspect of the invention; Fig. 5F schematically a side section view of the second branch through section FF of Fig. 5D of the X-type multi-stage power converter, which is in Fig. 4 is schematically illustrated and contains several semiconductor switches, each comprising a single chip, according to one aspect of the invention; Fig. 6A schematically a top view of a first branch of an X-type multi-stage power converter, which is in Fig. 4 is schematically illustrated and contains several semiconductor switches, each having several chips, according to one aspect of the invention; Fig. 6B schematically a side section view of the first branch through section BB of Fig. 6A of the X-type multi-stage power converter, which is in Fig. 4 is schematically illustrated and contains several semiconductor switches, each having several chips, according to one aspect of the invention; Fig. 6C schematically a side section view of the first branch through section CC of Fig. 6A of the X-type multi-stage power converter, which is in Fig. 4 is schematically illustrated and contains several semiconductor switches, each having several chips, according to one aspect of the invention; Fig. 6D schematically a top view of a second branch of an X-type multi-stage power converter, which is in Fig. 4 is schematically illustrated and contains several semiconductor switches, each having several chips, according to one aspect of the invention; Fig. 6E schematically a side section view of the second branch through section EE of Fig. 6D of the X-type multi-stage power converter, which is in Fig. 4 is schematically illustrated and contains several semiconductor switches, each having several chips, according to one aspect of the invention; Fig. 6F schematically a side section view of the second branch through section FF of Fig. 6D of the X-type multi-stage power converter, which is in Fig. 4 is schematically illustrated and contains several semiconductor switches, each having several chips, according to one aspect of the invention; Fig. 7A schematically a top view of a first branch of an X-type multi-stage power converter, which is in Fig. 4 is schematically illustrated and contains several semiconductor switches, each comprising a single chip, according to one aspect of the invention; Fig. 7B schematically a side section view of the first branch through section BB of Fig. 7A of the X-type multi-stage power converter, which is located in Fig. 4 is schematically illustrated and contains several semiconductor switches, each comprising a single chip, according to one aspect of the invention; Fig. 7C schematically a side section view of the first branch through section CC of Fig. 7A of the X-type multi-stage power converter, which is located in Fig. 4 is schematically illustrated and contains several semiconductor switches, each comprising a single chip, according to one aspect of the invention; Fig. 7D schematically a top view of a second branch of an X-type multi-stage power converter, which is in Fig. 4 is schematically illustrated and contains several semiconductor switches, each comprising a single chip, according to one aspect of the invention; Fig. 7E schematically a side section view of the second branch through section EE of Fig. 7D of the X-type multi-stage power converter, which is in Fig. 4 is schematically illustrated and contains several semiconductor switches, each comprising a single chip, according to one aspect of the invention; Fig. 7F schematically a side section view of the second branch through section FF of Fig. 7D of the X-type multi-stage power converter, which is in Fig. 4 is schematically illustrated and contains several semiconductor switches, each comprising a single chip, according to one aspect of the invention; Fig. 8A schematically a top view of a first branch of an X-type multi-stage power converter, which is in Fig. 4 is schematically illustrated and contains several semiconductor switches, each having several chips, according to one aspect of the invention; Fig. 8B schematically a side section view of the first branch through section BB of Fig. 8A of the X-type multi-stage power converter, which is in Fig. 4 is schematically illustrated and contains several semiconductor switches, each having several chips, according to one aspect of the invention; Fig. 8C schematically a side section view of the first branch through section CC of Fig. 8A of the X-type multi-stage power converter, which is in Fig. 4 is schematically illustrated and contains several semiconductor switches, each having several chips, according to one aspect of the invention; Fig. Figure 8D schematically illustrates a top view of the second branch of an X-type multi-stage power converter, which is located in Fig. 4 is schematically illustrated and contains several semiconductor switches, each having several chips, according to one aspect of the invention; Fig. 8E schematically a side section view of the second branch through section EE of Fig. 8D of the X-type multi-stage power converter, which is in Fig. 4 is schematically illustrated and contains several semiconductor switches, each having several chips, according to one aspect of the invention and Fig. 8F schematically a side section view of the second branch through section FF of Fig. 8D of the X-type multi-stage power converter, which is in Fig. Figure 4 is schematically illustrated and contains several semiconductor switches, each having several chips, according to one aspect of the invention.

[0088] The accompanying drawings are not necessarily to scale and may represent a somewhat simplified representation of various preferred features of the present invention disclosed herein, including, for example, certain dimensions, orientations, locations, and shapes. Details adjacent to such features are partly determined by the specific intended application and environment of use. DETAILED DESCRIPTION

[0089] As used here, the term "electric machine" refers to an electric motor / generator device which contains a rotor and a stator and can convert electrical power to mechanical power and / or mechanical power to electrical power by electromagnetic effort.

[0090] Referring to the drawings, where similar reference symbols in the multiple figures refer to the same or similar components, illustrate Fig. 1 and Fig. Figure 2 schematically shows an electric drive train 100, which consists of a direct current power source (DC power source) 101, a multiphase power inverter 104, a multiphase rotary electric motor, generator, or motor-generator (an electric machine) 10, and a torque actuator 120, the operation of which is monitored and controlled by a controller 30. In one aspect of the invention, the electric drive train 100 is designed to generate torque and transmit it to the torque actuator 120 in the form of one or more drive wheels to perform work. The controller 30 executes control routines to control and manage the operation of the multiphase power inverter 104. In another aspect of the invention, the electric drive train 100 is arranged on an electrified vehicle, which is schematically illustrated in Figure 20, and can generate traction torque for vehicle propulsion.When arranged in the electrified vehicle 20, the electrified vehicle 20 can include a mobile platform in the form of a commercial vehicle, an industrial vehicle, an agricultural vehicle, a passenger car, an aircraft, a watercraft, a train, a quad bike, a personal mobility device, a robot, and the like, to achieve the purposes of this invention. Alternatively, the electric powertrain 100 can be an element of a stationary system.

[0091] The controller 30 can be embodied as one or more digital computing units and can contain one or more processors 34 and memory 32. A control routine 36 can be stored as an executable instruction set in memory 32 and executed by one of the processors 34 of the controller 30. The controller 30 communicates with the multiphase power inverter 104 to control its operation in response to the execution of the control routine 36, in order to operate the electric machine 10. The multiphase power inverter 104 exchanges or transfers electrical power to the electric machine 10 by means of several first AC power buses 121 and second AC power buses 122.

[0092] The term "controller" and related terms such as microcontroller, control module, module, control, control unit, processor and similar terms refer to one or more combinations of one or more application-specific integrated circuits (ASICs), a field-programmable gate array (FPGA), one or more electronic circuits, one or more central processing units, e.g., one or more microprocessors, and one or more associated memory components in the form of one or more transitory and / or non-transient memory components and storage devices (fixed value, programmable fixed value, random access, hard disk, etc.).The non-transient memory component can store machine-readable instructions in the form of one or more software or firmware programs or routines, one or more combinational logic circuits, one or more input / output circuits and devices, a signal conditioning circuit, a buffer circuit arrangement, and other components accessible to one or more processors to provide a described functionality. One or more input / output circuits and devices include analog-to-digital converters and related devices that monitor sensor inputs, such inputs being monitored at a preset sampling frequency or in response to a trigger event.Software, firmware, programs, commands, control routines, code, algorithms and similar terms refer to controller-executable instruction sets that contain calibrations and lookup tables.

[0093] The electric machine 10 comprises a cylindrical rotor assembly mounted on a rotor shaft and arranged within an annular stator, the rotor assembly being coaxial with a rotor opening formed in the stator. Other elements of the electric machine 10, such as end caps, shaft bearings, electrical connections, etc., are included but not shown. The stator's electrical windings are configured with a number of electrical phases and a number of electrical turns per phase. Depending on the specific configuration, the number of electrical phases can range from 3 to 6, and the number of conductor layers can range from 4 to 12.

[0094] The multiphase power inverter 104 contains several semiconductor switches (which are referred to in relation to Fig. (illustrated in Figures 3 ff.), which are designed and controllable, to transform direct current (DC) power to alternating current (AC) power and to transform AC power to DC power using a pulse width modulation signal 108 or other control technology. The multiphase power inverter 104 is designed and controllable to transform DC power from the high-voltage DC source 101 into AC power in order to actuate the electric machine 10 by means of electromagnetic input. The electric machine 10 is controllable to rotate and generate a mechanical torque, which is transmitted to the torque actuator 120 by means of a rotatable element 12 and a gear train 114 when it is operated in a torque-generating mode.The electric machine 10 is controllable to generate alternating current electrical power from a mechanical torque originating from the torque actuator 120 by means of electromagnetic input. This alternating current is transformed by the multiphase power inverter 104 into direct current electrical power for storage in the high-voltage DC power source 101 when operated in a power-generating mode. In one aspect of the invention, the torque actuator 120 includes a vehicle wheel that, as part of a friction-based propulsion system, transmits torque to a ground surface to effect forward movement. The high-voltage DC power source 101 can be in the form of a rechargeable electrochemical battery, a fuel cell, an ultracapacitor, and / or another electrical energy storage / generation technology.

[0095] The high-voltage DC source 101 can be a rechargeable electrochemical battery, a fuel cell, an ultracapacitor, and / or another electrical energy storage / generation technology. The high-voltage DC source 101 connects to the multiphase power inverter 104 via a high-voltage DC bus having a positive connection 102 and a negative connection 103, and the multiphase power inverter 104 connects to the electric machine 10 via several first AC power buses 121 and second AC power buses 122 to transmit the pulse-width modulation signal 108.

[0096] As with reference to Fig. As illustrated in Figure 2, the multiphase power inverter 104 of the electric drive train 100 is formed with several multistage power converters 150 of the X type, which are arranged between the high-voltage DC source 101 and the electric machine 10, with a DC link capacitor 105 between the high-voltage DC source 101 and the multiphase power inverter 104 of the electric drive train 100, and with respective first AC power buses 121 and second AC power buses 122. As illustrated, and in one aspect of the invention, the multiphase power inverter 104 of the electric drive train 100 is formed with three of the multistage power converters 150 of the X type.

[0097] Fig. Figure 3 schematically illustrates one of the X-type multi-stage power converters 150, designed as a solid-state integrated circuit (solid-state IC) comprising several semiconductor switches arranged in a laterally split configuration. In one aspect of the invention, and as shown, the multiple semiconductor switches include a first semiconductor switch S1 151, a second semiconductor switch S2 152, a third semiconductor switch S3 153, a fourth semiconductor switch S4 154, a fifth semiconductor switch S5 155, a sixth semiconductor switch S6 156, a seventh semiconductor switch S7 157, and an eighth semiconductor switch S8 158. In one aspect of the invention, at least some of the semiconductor switches are field-effect transistors (FETs). In another aspect of the invention, the FETs are gallium nitride transistors (GaN transistors).In one aspect of the invention, at least some of the semiconductor switches are insulated gate bipolar transistors (IGBTs).

[0098] Further components of the X-type multi-stage power converter 150 include a first clamping diode D1 171, a second clamping diode D2 172, a positive DC power bus 110, a neutral bus 111, and a negative DC power bus 112. The positive DC power bus 110 is connected to the positive terminal 102 of the high-voltage DC bus, and the negative DC power bus 112 is connected to the negative terminal 103 of the high-voltage DC bus.

[0099] The first semiconductor switch S1 151, the second semiconductor switch S2 152, the third semiconductor switch S3 153, and the fourth semiconductor switch S4 154 are connected in series between the positive DC power bus 110 and the negative DC power bus 112. This includes the following: the first semiconductor switch S1 151 is connected to the second semiconductor switch S2 152 at the first node 161; the second semiconductor switch S2 152 is connected to the third semiconductor switch S3 153 at the second node 162; and the third semiconductor switch S3 153 is connected to the fourth semiconductor switch S4 154 at the third node 163.

[0100] The fifth semiconductor switch S5 155, the sixth semiconductor switch S6 156, the seventh semiconductor switch S7 157, and the eighth semiconductor switch S8 158 are connected in series between the positive DC power bus 110 and the negative DC power bus 112. This includes the following: the fifth semiconductor switch S5 155 is connected to the sixth semiconductor switch S6 156 at the fourth node 164; the sixth semiconductor switch S6 156 is connected to the seventh semiconductor switch S7 157 at the fifth node 165; and the seventh semiconductor switch S7 157 is connected to the eighth semiconductor switch S8 158 at the sixth node 166.

[0101] A first clamping diode D1 171 is laid between the fourth node 164 and the third node 163, wherein the anode of the first clamping diode D1 171 is connected to the fourth node 164 and the cathode of the first clamping diode D1 171 is connected to the third node 163.

[0102] A second clamping diode D2 172 is placed between the first node 161 and the sixth node 166, with the anode of the second clamping diode D2 172 connected to the sixth node 166 and the cathode of the second clamping diode D2 172 connected to the first node 161.

[0103] The first node 161 establishes a connection with the first AC power bus 121 to transfer power to the electric machine 10 (as described in reference to Fig. 2 is shown).

[0104] The second node 162 establishes a connection with the second AC power bus 122 to transfer power to the electric machine 10 (as described in reference to Fig. 2 is shown).

[0105] A positive DC power bus 110, a neutral power bus 111 and a negative DC power bus 112 are shown schematically.

[0106] As in Fig. As schematically illustrated in Figure 4, a multi-stage converter 150 of the X type comprises a first branch 150A, a second branch 150B, power module substrates 180A, 180B, and heat sinks 142A, 142B. Each of the first branch 150A and the second branch 150B is located adjacent to the respective first sides 180A-1, 180A-2 of the power module substrates 180A, 180B. Each of the heat sinks 142A, 142B is located adjacent to the respective second sides 180A-2, 180B-2 of the power module substrates 180A, 180B.

[0107] The first branch 150A is connected to the second branch by one or more connections, which are schematically illustrated at 190, which may include one or more connections that electrically connect the first branch 150A and the second branch 150B.

[0108] As in Fig. 5A and Fig. 5B with continued reference to Fig. 3 and Fig. As schematically illustrated in section 4, the first branch is 150A ( Fig. 5A) of a multi-stage power converter 150 of the X type to a first side 180A-1 of a power module substrate 180A adjacent and is a second branch 150B ( Fig. 5D) of the multi-stage power converter 150 of the X-type to a first side 180B-1 of a power module substrate 180B adjacent.

[0109] The first branch 150A and the second branch 150B contain several semiconductor switches arranged in a staggered configuration on the power module substrates 180A, 180B.

[0110] The multiple semiconductor switches included in one aspect of the invention and as shown are a first semiconductor switch S1 151, a second semiconductor switch S2 152, a third semiconductor switch S3 153, a fourth semiconductor switch S4 154, a fifth semiconductor switch S5 155, a sixth semiconductor switch S6 156, a seventh semiconductor switch S7 157 and an eighth semiconductor switch S8 158.

[0111] As in Fig. 5A, Fig. 5B and Fig. As schematically illustrated in 5C, the first branch contains 150A of the X-type multi-stage power converter 150 ( Fig. 4) a positive DC power bus 110A, a negative DC power bus 112A, a first AC bus 121A, a second AC power bus 122A, a first clamping diode D1 171, a first conductive layer 147A, a second conductive layer 148A, a first power module substrate 180A, a first heat sink 142A adjacent to a second side 180A-2 of the first power module substrate 180A, several first semiconductor switches including the third semiconductor switch S3 153, the fourth semiconductor switch S4 154, the fifth semiconductor switch S5 155 and the sixth semiconductor switch S6 156, and several first conductive spacers 146A.

[0112] The several first conductive spacers 146A are arranged between the fifth semiconductor switch S5 155 and the positive DC power bus 110A, the sixth semiconductor switch S6 156 and the first AC bus 121A, the fourth semiconductor switch S4 154 and the second conductive layer 148A, the third semiconductor switch S3 153 and the second conductive layer 148A and the first clamping diode D1 171 and the second conductive layer 148A.

[0113] The several first semiconductor switches, the positive DC power bus 110A of the first branch, the negative DC power bus 112A of the first branch, the first AC bus 121A of the first branch, the second AC bus 122A of the first branch, the first conductive layer 147A of the first branch, the second conductive layer 148A of the first branch and the first clamping diode D1 171 are designed in several stages, which include a first stage T1-A, a second stage T2-A and a third stage T3-A.

[0114] The first stage T1-A is formed from the first conductive layer 147A of the first branch, which is designed coplanar with the first negative DC power bus 112A of the first branch, which is designed coplanar with the second AC bus 122A of the first branch.

[0115] The second stage T2-A is formed from the first clamping diode D1 171, which is designed coplanarly with the third semiconductor switch S3 153, which is designed coplanarly with the fourth semiconductor switch S4 154, which is designed coplanarly with the fifth semiconductor switch S5 155, which is designed coplanarly with the sixth semiconductor switch S6 156.

[0116] The third stage T3-A is formed from the second conductive layer 148A of the first branch, which is designed coplanar with the first positive DC power bus 110A of the first branch, which is designed coplanar with the first AC bus 121A of the first branch.

[0117] As in Fig. 5D, Fig. 5E and Fig. As schematically illustrated in 5F, the second branch 150B of the X-type multi-stage power converter 150 contains ( Fig. 4) a positive DC power bus 110B, a negative DC power bus 112B, a first AC bus 121B, a second AC bus 122B, a second clamping diode D2 172, a first conductive layer 147B, a second conductive layer 148B, a second power module substrate 180B, a second heat sink 142B adjacent to a second side 180B-2 of the second power module substrate 180B, several second semiconductor switches including the first semiconductor switch S1 151, the second semiconductor switch S2 152, the seventh semiconductor switch S7 157 and the eighth semiconductor switch S8 158, and several second conductive spacers 146B.

[0118] The several second conductive spacers 146B are arranged between the first semiconductor switch S1 151 and the positive DC power bus 110B, the second semiconductor switch S2 152 and the second AC bus 121B, the eighth semiconductor switch S8 158 and the second conductive layer 148B, the seventh semiconductor switch S7 157 and the second conductive layer 148B, and the second clamping diode D2 172 and the second conductive layer 148B.

[0119] The several second semiconductor switches, the positive DC power bus 110B of the second branch, the negative DC power bus 112B of the second branch, the first AC bus 121B of the second branch, the second AC bus 122B of the second branch, the first conductive layer 147B of the second branch, the second conductive layer 148B of the second branch and the second clamping diode D1 172 are designed in several stages, which include a first stage T1-B, a second stage T2-B and a third stage T3-B.

[0120] The first stage T1-B is formed from the first conductive layer 147B of the second branch, which is designed coplanar with the first negative DC power bus 112B of the second branch, which is designed coplanar with the second AC bus 122B of the second branch.

[0121] The second stage T2-B is formed from the second clamping diode D2 172, which is designed coplanar with the first semiconductor switch S1 151, which is designed coplanar with the second semiconductor switch S2 152, which is designed coplanar with the seventh semiconductor switch S7 157, which is designed coplanar with the eighth semiconductor switch S8 158.

[0122] The third stage T3-B is formed from the second conductive layer 148B of the second branch, which is designed coplanar with the first positive DC power bus 110B of the second branch, which is designed coplanar with the first AC bus 121B of the second branch.

[0123] According to one aspect of the invention, the multi-stage power converter 150 includes a first heat sink 142A and a second heat sink 142B.

[0124] With renewed reference to Fig. 5B and Fig. 5C are the first conductive layer 147A of the first branch, the negative DC power bus 112A of the first branch and the second AC bus 122A of the first branch to the first side 180A-1 of the first power module substrate 180A adjacent.

[0125] The first heat sink 142A is designed to be adjacent to the second side 180A-2 of the first power module substrate 180A.

[0126] With renewed reference to Fig. 5E and Fig. 5F are the first conductive layer 147B of the second branch, the negative DC power bus 112B of the second branch and the second AC bus 122B of the second branch adjacent to the first side 180B-1 of the second power module substrate 180B.

[0127] The second heat sink 142B is designed to be adjacent to the second side 180B-2 of the second power module substrate 180B.

[0128] As in Fig. As illustrated in Figure 5A, the fifth semiconductor switch S5 155, the sixth semiconductor switch S6 156, the positive DC bus 110A of the first branch, and the first AC bus 121A of the first branch are arranged on a first section P1 of the first power module substrate 180A. The first clamping diode D1 171 and several first gate / source pins 149A are arranged on a second section P2 of the first power module substrate 180A. The fourth semiconductor switch S4 154, the third semiconductor switch S3 153, the negative DC bus 112A of the first branch, and the second AC bus 122A of the first branch are arranged on a third section P3 of the first power module substrate 180A.

[0129] The first section P1, the second section P2, and the third section P3 of the first 180A power module substrate are coplanar. The second section P2 is positioned between the first section P1 and the third section P3.

[0130] As in Fig. As illustrated in Figure 5D, the first semiconductor switch S1 151, the second semiconductor switch S2 152, the positive DC power bus 110B of the second branch, and the second AC bus 122B of the second branch are arranged on a first section P1 of the second power module substrate 180-B. The second clamping diode D2 172 and several second gate / source pins 149B are arranged on a second section P2 of the second power module substrate 180B. The eighth semiconductor switch S8 158, the seventh semiconductor switch S7 157, the negative DC bus 112B of the second branch, and the first AC bus 121B of the second branch are arranged on a third section P3 of the second power module substrate 180B.

[0131] The first section P1, the second section P2, and the third section P3 of the second power module substrate 180B are coplanar. The second section P2 is positioned between the first section P1 and the third section P3.

[0132] According to one aspect of the invention, the multiple first gate / source pins 149A and the multiple second gate / source pins 149B are configured to pop out vertically from the first power module substrate 180A and the second power module substrate 180B, respectively.

[0133] According to one aspect of the invention, the positive DC power bus 110A of the first branch, the negative DC power bus 112A of the first branch, the positive DC power bus 110B of the second branch and the negative DC power bus 112B of the second branch are designed at a first end 150A-1 of the multi-stage power converter 150 of the X type, and the first AC bus 121A of the first branch, the second AC bus 122A of the first branch, the first AC bus 121B of the second branch and the second AC bus 122B of the second branch are designed at a second end 150A-2 of the multi-stage power converter 150 of the X type.

[0134] According to one aspect of the invention, each of the multiple first semiconductor switches and the second semiconductor switch contains a single chip.

[0135] According to one aspect of the invention, each individual chip contains a vertical arrangement.

[0136] With renewed reference to Fig. 4 and with continued reference to Fig. 5A and Fig. 5D are the first branch 150A ( Fig. 5A) and the second branch 150B ( Fig. 5D) of the X-type multi-stage power converter 150 electrically connected by connections 190, which are designed between the first AC bus 121A of the first branch 150A and the first AC bus 121B of the second branch 150B and the second AC bus 122A of the first branch 150A and the second AC bus 122B of the second branch 150B.

[0137] As in Fig. 6A and Fig. 6D with continued reference to Fig. 3 and Fig. As illustrated in section 4, the first branch is 250A ( Fig. 6A) of a multi-stage power converter 150 of the X type to a first side 280A-1 of a power module substrate 280A adjacent and is a second branch 250B ( Fig. 6D) of the multi-stage power converter 150 of the X type to a first side 280B-1 of a power module substrate 280B adjacent.

[0138] The first branch 250A and the second branch 250B contain several semiconductor switches arranged in a staggered configuration on the power module substrates 280A, 280B.

[0139] The multiple semiconductor switches included in one aspect of the invention and as shown are a first semiconductor switch S1 251, a second semiconductor switch S2 252, a third semiconductor switch S3 253, a fourth semiconductor switch S4 254, a fifth semiconductor switch S5 255, a sixth semiconductor switch S6 256, a seventh semiconductor switch S7 257 and an eighth semiconductor switch S8 258.

[0140] As in Fig. 6A, Fig. 6B and Fig. 6C is schematically illustrated, the first branch contains 250A of the multi-stage power converter 150 of the X-type ( Fig. 4) a positive DC power bus 210A, a negative DC power bus 212A, a first AC bus 221A, a second AC power bus 222A, a first clamping diode D1 271, a first conductive layer 247A, a second conductive layer 248A, a first power module substrate 280A, a first heat sink 242A adjacent to a second side 280A-2 of the first power module substrate 280A, several first semiconductor switches including the third semiconductor switch S3 253, the fourth semiconductor switch S4 254, the fifth semiconductor switch S5 255 and the sixth semiconductor switch S6 256, and several first conductive spacers 246A.

[0141] The several first conductive spacers 246A are arranged between the fifth semiconductor switch S5 255 and the positive DC power bus 210A, the sixth semiconductor switch S6 256 and the first AC bus 221A, the fourth semiconductor switch S4 254 and the second conductive layer 248A, the third semiconductor switch S3 253 and the second conductive layer 248A and the first clamping diode D1 271 and the second conductive layer 248A.

[0142] The several first semiconductor switches, the positive DC power bus 210A of the first branch, the negative DC power bus 212A of the first branch, the first AC bus 221A of the first branch, the second AC bus 222A of the first branch, the first conductive layer 247A of the first branch, the second conductive layer 248A of the first branch and the first clamping diode D1 271 are designed in several stages, which include a first stage T1-A, a second stage T2-A and a third stage T3-A.

[0143] The first stage T1-A is formed from the first conductive layer 247A of the first branch, which is designed coplanarly with the first negative DC power bus 212A of the first branch, which is designed coplanarly with the second AC bus 222A of the first branch.

[0144] The second stage T2-A is formed from the first clamping diode D1 271, which is designed coplanarly with the third semiconductor switch S3 253, which is designed coplanarly with the fourth semiconductor switch S4 254, which is designed coplanarly with the fifth semiconductor switch S5 255, which is designed coplanarly with the sixth semiconductor switch S6 256.

[0145] The third stage T3-A is formed from the second conductive layer 248A of the first branch, which is designed coplanar with the first positive DC power bus 210A of the first branch, which is designed coplanar with the first AC bus 221A of the first branch.

[0146] As in Fig. 6D, Fig. 6E and Fig. As schematically illustrated in 6F, the second branch 250B of the X-type multi-stage power converter 150 contains ( Fig. 4) a positive DC power bus 210B, a negative DC power bus 212B, a second AC bus 221B, a second AC power bus 222B, a second clamping diode D2 272, a first conductive layer 247B, a second conductive layer 248B, a second power module substrate 280B, a second heat sink 242B adjacent to a second side 280B-2 of the second power module substrate 280B, several second semiconductor switches including the first semiconductor switch S1 251, the second semiconductor switch S2 252, the seventh semiconductor switch S7 257 and the eighth semiconductor switch S8 258, and several second conductive spacers 246B.

[0147] The several second conductive spacers 246B are arranged between the first semiconductor switch S1 251 and the positive DC power bus 210B, the second semiconductor switch S2 252 and the second AC bus 221B, the eighth semiconductor switch S8 258 and the second conductive layer 248B, the seventh semiconductor switch S7 257 and the second conductive layer 248B, and the second clamping diode D2 272 and the second conductive layer 248B.

[0148] The multiple second semiconductor switches, the positive DC power bus 210B of the second branch, the negative DC power bus 212B of the second branch, the first AC bus 221B of the second branch, the second AC bus 222B of the second branch, the first conductive layer 247B of the second branch, the second conductive layer 248B of the second branch and the second clamping diode D1 272 are designed in several stages, which include a first stage T1-B, a second stage T2-B and a third stage T3-B.

[0149] The first stage T1-B is formed from the first conductive layer 247B of the second branch, which is designed coplanar with the first negative DC power bus 212B of the second branch, which is designed coplanar with the second AC bus 222B of the second branch.

[0150] The second stage T2-B is formed from the second clamping diode D2 272, which is designed coplanar with the first semiconductor switch S1 251, which is designed coplanar with the second semiconductor switch S2 252, which is designed coplanar with the seventh semiconductor switch S7 257, which is designed coplanar with the eighth semiconductor switch S8 258.

[0151] The third stage T3-B is formed from the second conductive layer 248B of the second branch, which is designed coplanar with the first positive DC power bus 210B of the second branch, which is designed coplanar with the second AC bus 222B of the second branch.

[0152] According to one aspect of the invention, the multi-stage power converter 150 includes a first heat sink 242A and a second heat sink 242B.

[0153] With renewed reference to Fig. 6B and Fig. 6C are the first conductive layer 247A of the first branch, the negative DC power bus 212A of the first branch and the second AC bus 222A of the first branch to the first side 280A-1 of the first power module substrate 280A adjacent.

[0154] The first heat sink 242A is designed to be adjacent to the 280A-2 of the first power module substrate 280A.

[0155] With renewed reference to Fig. 6E and Fig. 6F are the first conductive layer 247B of the second branch, the negative DC power bus 212B of the second branch and the second AC bus 222B of the second branch adjacent to the first side 280B-1 of the second power module substrate 280B.

[0156] The second heat sink 242B is designed to be adjacent to the second side 280B-2 of the second power module substrate 280B.

[0157] As in Fig. As illustrated in Figure 6A, the fifth semiconductor switch S5 255, the sixth semiconductor switch S6 256, the positive DC bus 210A of the first branch, and the first AC bus 221A of the first branch are arranged on a first section P1 of the first power module substrate 280A. The first clamping diode D1 271 and several first gate / source pins 249A are arranged on a second section P2 of the first power module substrate 280A. The fourth semiconductor switch S4 254, the third semiconductor switch S3 253, the negative DC bus 212A of the first branch, and the second AC bus 222A of the first branch are arranged on a third section P3 of the first power module substrate 280A.

[0158] The first section P1, the second section P2, and the third section P3 of the first 280A power module substrate are coplanar. The second section P2 is positioned between the first section P1 and the third section P3.

[0159] As in Fig. As illustrated in Figure 6D, the first semiconductor switch S1 251, the second semiconductor switch S2 252, the positive DC bus 210B of the second branch, and the second AC bus 222B of the second branch are arranged on a first section P1 of the second power module substrate 280B. The second clamping diode D2 272 and several second gate / source pins 249B are arranged on a second section P2 of the second power module substrate 280B. The eighth semiconductor switch S8 258, the seventh semiconductor switch S7 257, the negative DC bus 212B of the second branch, and the first AC bus 221B of the second branch are arranged on a third section P3 of the second power module substrate 280B.

[0160] The first section P1, the second section P2, and the third section P3 of the second power module substrate 280B are coplanar. The second section P2 is positioned between the first section P1 and the third section P3.

[0161] According to one aspect of the invention, the multiple first gate / source pins 249A and the multiple second gate / source pins 249B are configured to pop out vertically from the first power module substrate 280A and the second power module substrate 280B, respectively.

[0162] According to one aspect of the invention, the positive DC power bus 210A of the first branch, the negative DC power bus 212A of the first branch, the positive DC power bus 210B of the second branch and the negative DC power bus 212B of the second branch are designed at a first end 250A-1 of the multi-stage power converter 250 of the X type, and the first AC bus 221A of the first branch, the second AC bus 222A of the first branch, the first AC bus 221B of the second branch and the second AC bus 222B of the second branch are designed at a second end 250A-2 of the multi-stage power converter 250 of the X type.

[0163] According to one aspect of the invention, each of the multiple first semiconductor switches and the second semiconductor switch contains multiple chips.

[0164] According to one aspect of the invention, each of the multiple chips contains a vertical arrangement.

[0165] With renewed reference to Fig. 4 and with continued reference to Fig. 6A and Fig. 6D are the first branch 250A ( Fig. 6A) and the second branch 250B ( Fig. 6D) of the X-type multi-stage power converter 150 electrically connected by connections 290, which are designed between the first AC bus 221A of the first branch 250A and the first AC bus 221B of the second branch 250B and the second AC bus 222A of the first branch 250A and the second AC bus 222B of the second branch 250B.

[0166] As in Fig. 7A and Fig. 7D with continued reference to Fig. 3 and Fig. As schematically illustrated in section 4, the first branch is 350A ( Fig. 7A) of a multi-stage power converter 150 of the X type to a first side 380A-1 of a power module substrate 380A adjacent and is a second branch 350B ( Fig. 7D) of the multi-stage power converter 150 of the X type to a first side 380B-1 of a power module substrate 380B adjacent.

[0167] The first branch 350A and the second branch 350B contain several semiconductor switches arranged in a staggered configuration on the power module substrates 380A, 380B.

[0168] The multiple semiconductor switches included in one aspect of the invention and as shown are a first semiconductor switch S1 351, a second semiconductor switch S2 352, a third semiconductor switch S3 353, a fourth semiconductor switch S4 354, a fifth semiconductor switch S5 355, a sixth semiconductor switch S6 356, a seventh semiconductor switch S7 357 and an eighth semiconductor switch S8 358.

[0169] As in Fig. 7A, Fig. 7B and Fig. As schematically illustrated in 7C, the first branch contains 350A of the X-type multi-stage power converter 150 ( Fig. 4) a positive DC power bus 310A, a negative DC power bus 312A, a first AC bus 321A, a second AC power bus 322A, a first clamping diode D1 371, a first conductive layer 347A, a second conductive layer 348A, a first power module substrate 380A, a first heat sink 342A adjacent to a second side 380A-2 of the first power module substrate 380A, several first semiconductor switches including the third semiconductor switch S3 353, the fourth semiconductor switch S4 354, the fifth semiconductor switch S5 355 and the sixth semiconductor switch S6 356, and several first conductive spacers 346A.

[0170] The several first conductive spacers 346A are arranged between the first clamping diode D1 371 and a first section 347A-1 of the first conductive layer 347A.

[0171] The several first semiconductor switches, the positive DC power bus 310A of the first branch, the negative DC power bus 312A of the first branch, the first AC bus 321A of the first branch, the second AC bus 322A of the first branch, the first conductive layer 347A of the first branch, the second conductive layer 348A of the first branch and the first clamping diode D1 371 are designed in several stages, which include a first stage T1-A, a second stage T2-A and a third stage T3-A.

[0172] The first stage T1-A is formed from the first AC bus 321A of the first branch, which is designed coplanarly with the second AC bus 322A of the first branch, which is designed coplanarly with the first section 347A-1 of the first conductive layer 347A of the first branch, which is designed coplanarly with the first positive DC power bus 310A of the first branch, which is designed coplanarly with the negative DC power bus 312A of the first branch.

[0173] The second stage T2-A is formed from the first clamping diode D1 371, which is designed coplanarly with the third semiconductor switch S3 353, which is designed coplanarly with the fourth semiconductor switch S4 354, which is designed coplanarly with the fifth semiconductor switch S5 355, which is designed coplanarly with the sixth semiconductor switch S6 356.

[0174] The third stage T3-A is formed from a second section 347A-2 of the first conductive layer 347A of the first branch.

[0175] As in Fig. 7D, Fig. 7E and Fig. As schematically illustrated in 7F, the second branch 350B of the X-type multi-stage power converter 150 contains ( Fig. 4) a positive DC power bus 310B, a negative DC power bus 312B, a first AC bus 321B, a second AC power bus 322B, a second clamping diode D2 372, a first conductive layer 347B, a second conductive layer 348B, a first power module substrate 380B, a second heat sink 342B adjacent to a second side 380B-2 of the first power module substrate 380B, several second semiconductor switches including the first semiconductor switch S1 351, the second semiconductor switch S2 352, the seventh semiconductor switch S7 357 and the eighth semiconductor switch S8 358, and several second conductive spacers 346B.

[0176] The multiple second conductive spacers 346B are positioned between the second clamping diode D2 372 and the first conductive layer 347B.

[0177] The multiple second semiconductor switches, the positive DC power bus 310B of the second branch, the negative DC power bus 312B of the second branch, the first AC bus 321B of the second branch, the second AC bus 322B of the second branch, the first conductive layer 347B of the second branch, the second conductive layer 348B of the second branch and the second clamping diode D2 372 are designed in several stages, which include a first stage T1-B, a second stage T2-B and a third stage T3-B.

[0178] The first stage T1-B is formed from the first AC bus 321B of the second branch, which is coplanar with the second AC bus 322B of the second branch, which is coplanar with the first section 347B-1 of the first conductive layer 347B of the second branch, which is coplanar with the positive DC power bus 310B of the second branch, which is coplanar with the negative DC power bus 312B of the second branch.

[0179] The second stage T2-B is formed from the second clamping diode D2 372, which is designed coplanar with the first semiconductor switch S1 351, which is designed coplanar with the second semiconductor switch S2 352, which is designed coplanar with the seventh semiconductor switch S7 357, which is designed coplanar with the eighth semiconductor switch S8 358.

[0180] The third stage T3-B is formed from a second section 347B-2 of the first conducting layer 347B of the second branch.

[0181] According to one aspect of the invention, the multi-stage power converter 150 includes a first heat sink 342A and a second heat sink 342B.

[0182] With renewed reference to Fig. 7B and Fig. 7C are the first conductive layer 347A of the first branch, the negative DC power bus 312A of the first branch and the second AC bus 322A of the first branch adjacent to the first side 380A-1 of the first power module substrate 380A.

[0183] The first heat sink 342A is designed to be adjacent to the second side 380A-2 of the first power module substrate 380A.

[0184] With renewed reference to Fig. 7E and Fig. 7F are the first conductive layer 347B of the second branch, the negative DC power bus 312B of the second branch and the second AC bus 322B of the second branch adjacent to the first side 380B-1 of the second power module substrate 380B.

[0185] The second heat sink 342B is designed to be adjacent to the second side 380B-2 of the second power module substrate 380B.

[0186] As in Fig. As illustrated in Figure 7A, the fifth semiconductor switch S5 355, the sixth semiconductor switch S6 366, a first section 349A-1 of several first gate / source pins 349A-1, the first AC bus 321A of the first branch, and the positive DC power bus 310A of the first branch are arranged on a first section P1 of the first power module substrate 380A. The first clamping diode D1 371 and a second section 349A-2 of several first gate / source pins 349A are arranged on a second section P2 of the first power module substrate 380A. The third semiconductor switch S3 353, the fourth semiconductor switch S4 354, a third section 349A-3 of the several first gate / source pins 349A, the second AC bus 322A of the first branch and the negative DC power bus 312A of the first branch are arranged on a third section P3 of the first power module substrate 380A.

[0187] The first section P1, the second section P2, and the third section P3 of the first 380A power module substrate are coplanar. The second section P2 is positioned between the first section P1 and the third section P3.

[0188] As in Fig. As illustrated in Figure 7D, the first semiconductor switch S1 351, the second semiconductor switch S2 352, a first section 349B-1 of the multiple second gate / source pins 349B, the positive DC bus 310B of the second branch, and the second AC bus 322B of the second branch are arranged on a first section P1 of the second power module substrate 380B. The second clamping diode D2 372 and a second section 349B-2 of the multiple second gate / source pins 349B are arranged on a second section P2 of the second power module substrate 380B. The eighth semiconductor switch S8 358, the seventh semiconductor switch S7 357, a third section 349B-3 of the several second gate / source pins 349B, the negative DC bus 312B of the second branch and the first AC bus 321B of the second branch are arranged on a third section P3 of the second power module substrate 380B.

[0189] The first section P1, the second section P2, and the third section P3 of the second power module substrate 380B are coplanar. The second section P2 is positioned between the first section P1 and the third section P3.

[0190] According to one aspect of the invention, the multiple first gate / source pins 349A and the multiple second gate / source pins 349B are configured to pop out vertically from the first power module substrate 380A and the second power module substrate 380B, respectively.

[0191] According to one aspect of the invention, the positive DC power bus 310A of the first branch, the negative DC power bus 312A of the first branch, the positive DC power bus 310B of the second branch and the negative DC power bus 312B of the second branch are designed at a first end 350A-1 of the multi-stage power converter 350 of the X type, and the first AC bus 321A of the first branch, the second AC bus 322A of the first branch, the first AC bus 321B of the second branch and the second AC bus 322B of the second branch are designed at a second end 350A-2 of the multi-stage power converter 350 of the X type.

[0192] According to one aspect of the invention, each of the multiple first semiconductor switches and the second semiconductor switch contains a single chip.

[0193] According to one aspect of the invention, each individual chip contains a lateral device.

[0194] With renewed reference to Fig. 4 and with continued reference to Fig. 7A and Fig. 7D are the first branch 350A ( Fig. 7A) and the second branch 350B ( Fig. 7D) of the X-type multi-stage power converter 150 electrically connected by connections 390, which are designed between the first AC bus 321A of the first branch 350A and the first AC bus 321B of the second branch 350B and the second AC bus 322A of the first branch 350A and the second AC bus 322B of the second branch 350B.

[0195] As in Fig. 8A and Fig. 8D with continued reference to Fig. 3 and Fig. As illustrated in section 4, the first branch is 450A ( Fig. 8A) of a multi-stage power converter 150 of the X type to a first side 480A-1 of a power module substrate 480A adjacent and is a second branch 450B ( Fig. 8D) of the multi-stage power converter 150 of the X type to a first side 480B-1 of a power module substrate 480B adjacent.

[0196] The first branch 450A and the second branch 450B contain several semiconductor switches arranged in a staggered configuration on the power module substrates 480A, 480B.

[0197] The multiple semiconductor switches included in one aspect of the invention and as shown are a first semiconductor switch S1 451, a second semiconductor switch S2 452, a third semiconductor switch S3 453, a fourth semiconductor switch S4 454, a fifth semiconductor switch S5 455, a sixth semiconductor switch S6 456, a seventh semiconductor switch S7 457 and an eighth semiconductor switch S8 458.

[0198] As in Fig. 8A, Fig. 8B and Fig. As schematically illustrated in 8C, the first branch contains 450A of the X-type multi-stage power converter 150 ( Fig. 4) a positive DC power bus 410A, a negative DC power bus 412A, a first AC bus 421A, a second AC power bus 422A, a first clamping diode D1 471, a first conductive layer 447A, a second conductive layer 448A, a first power module substrate 480A, a first heat sink 442A adjacent to a second side 480A-2 of the first power module substrate 480A, several first semiconductor switches including the third semiconductor switch S3 453, the fourth semiconductor switch S4 454, the fifth semiconductor switch S5 455 and the sixth semiconductor switch S6 456, and several first conductive spacers 446A.

[0199] The several first conductive spacers 446A are arranged between the first clamping diode D1 471 and a first section 447A-1 of the first conductive layer 447A.

[0200] The several first semiconductor switches, the positive DC power bus 410A of the first branch, the negative DC power bus 412A of the first branch, the first AC bus 421A of the first branch, the second AC bus 422A of the first branch, the first conductive layer 447A of the first branch, the second conductive layer 448A of the first branch and the first clamping diode D1 471 are designed in several stages, which include a first stage T1-A, a second stage T2-A and a third stage T3-A.

[0201] The first stage T1-A is formed from the first AC bus 421A of the first branch, which is designed coplanarly with the second AC bus 422A of the first branch, which is designed coplanarly with the first section 447A-1 of the first conductive layer 447A of the first branch, which is designed coplanarly with the first positive DC power bus 410A of the first branch, which is designed coplanarly with the negative DC power bus 412A of the first branch.

[0202] The second stage T2-A is formed from the first clamping diode D1 471, which is designed coplanarly with the third semiconductor switch S3 453, which is designed coplanarly with the fourth semiconductor switch S4 454, which is designed coplanarly with the fifth semiconductor switch S5 455, which is designed coplanarly with the sixth semiconductor switch S6 456.

[0203] The third stage T3-A is formed from a second section 447A-2 of the first conductive layer 447A of the first branch.

[0204] As in Fig. 8D, Fig. 8E and Fig. As schematically illustrated in 8F, the second branch 450B of the X-type multi-stage power converter 150 contains ( Fig. 4) a positive DC power bus 410B, a negative DC power bus 412B, a first AC bus 421B, a second AC power bus 422B, a second clamping diode D2 472, a first conductive layer 447B, a second conductive layer 448B, a first power module substrate 480B, a second heat sink 442B adjacent to a second side 480B-2 of the second power module substrate 480B, several second semiconductor switches including the first semiconductor switch S1 451, the second semiconductor switch S2 452, the seventh semiconductor switch S7 457 and the eighth semiconductor switch S8 458, and several second conductive spacers 446B.

[0205] The multiple second conductive spacers 446B are positioned between the second clamping diode D2 472 and the first conductive layer 447B.

[0206] The multiple second semiconductor switches, the positive DC power bus 410B of the second branch, the negative DC power bus 412B of the second branch, the first AC bus 421B of the second branch, the second AC bus 422B of the second branch, the first conductive layer 447B of the second branch, the second conductive layer 448B of the second branch and the second clamping diode D1 472 are designed in several stages, which include a first stage T1-B, a second stage T2-B and a third stage T3-B.

[0207] The first stage T1-B is formed from the first AC bus 421B of the second branch, which is designed coplanarly with the second AC bus 422B of the second branch, which is designed coplanarly with the first section 447B-1 of the first conductive layer 447B of the second branch, which is designed coplanarly with the positive DC power bus 410B of the second branch, which is designed coplanarly with the negative DC power bus 412B of the second branch.

[0208] The second stage T2-B is formed from the second clamping diode D2 472, which is designed coplanar with the first semiconductor switch S1 451, which is designed coplanar with the second semiconductor switch S2 452, which is designed coplanar with the seventh semiconductor switch S7 457, which is designed coplanar with the eighth semiconductor switch S8 458.

[0209] The third stage T3-B is formed from a second section 447B-2 of the first conducting layer 447B of the second branch.

[0210] According to one aspect of the invention, the multi-stage power converter 150 includes a first heat sink 442A and a second heat sink 442B.

[0211] With renewed reference to Fig. 8B and Fig. 8C are the first conductive layer 447A of the first branch, the negative DC power bus 412A of the first branch and the second AC bus 422A of the first branch to the first side 480A-1 of the first power module substrate 480A adjacent.

[0212] The first heat sink 442A is designed to be adjacent to the second side 480A-2 of the first power module substrate 480A.

[0213] With renewed reference to Fig. 8E and Fig. 8F are the first conductive layer 447B of the second branch, the negative DC power bus 412B of the second branch and the second AC bus 422B of the second branch adjacent to the first side 480B-1 of the second power module substrate 480B.

[0214] The second heat sink 442B is designed to be adjacent to the second side 480B-2 of the second power module substrate 480B.

[0215] As in Fig. As illustrated in Figure 8A, the fifth semiconductor switch S5 455, the sixth semiconductor switch S6 456, the first AC bus 421A of the first branch, and the positive DC power bus 410A of the first branch are arranged on a first section P1 of the first power module substrate 480A. The first clamping diode D1 471 and several first gate / source pins 449A are arranged on a second section P2 of the first power module substrate 480A. The third semiconductor switch S3 453, the fourth semiconductor switch S4 454, the second AC bus 422A of the first branch, and the negative DC power bus 412A of the first branch are arranged on a third section P3 of the first power module substrate 480A.

[0216] The first section P1, the second section P2, and the third section P3 of the first 480A power module substrate are coplanar. The second section P2 is positioned between the first section P1 and the third section P3.

[0217] As in Fig. As illustrated in Figure 8D, the first semiconductor switch S1 451, the second semiconductor switch S2 452, the positive DC power bus 410B of the second branch, and the second AC bus 422B of the second branch are arranged on a first section P1 of the second power module substrate 480B. The second clamping diode D2 472 and several second gate / source pins 449B are arranged on a second section P2 of the second power module substrate 480B. The eighth semiconductor switch S8 458, the seventh semiconductor switch S7 457, the negative DC bus 412B of the second branch, and the first AC bus 421B of the second branch are arranged on a third section P3 of the second power module substrate 480B.

[0218] The first section P1, the second section P2, and the third section P3 of the second power module substrate 480B are coplanar. The second section P2 is positioned between the first section P1 and the third section P3.

[0219] According to one aspect of the invention, the multiple first gate / source pins 449A and the multiple second gate / source pins 449B are configured to pop out vertically from the first power module substrate 480A and the second power module substrate 480B, respectively.

[0220] According to one aspect of the invention, the positive DC power bus 410A of the first branch, the negative DC power bus 412A of the first branch, the positive DC power bus 410B of the second branch and the negative DC power bus 412B of the second branch are designed at a first end 450A-1 of the multi-stage power converter 450 of the X type, and the first AC bus 421A of the first branch, the second AC bus 422A of the first branch, the first AC bus 421B of the second branch and the second AC bus 422B of the second branch are designed at a second end 450A-2 of the multi-stage power converter 450 of the X type.

[0221] According to one aspect of the invention, each of the multiple first semiconductor switches and the second semiconductor switch contains multiple chips.

[0222] According to one aspect of the invention, each of the multiple chips contains a lateral device.

[0223] With renewed reference to Fig. 4 and with continued reference to Fig. 8A and Fig. 8D are the first branch 450A ( Fig. 8A) and the second branch 450B ( Fig. 8D) of the X-type multi-stage power converter 150 electrically connected by connections 490, which are designed between the first AC bus 421A of the first branch 450A and the first AC bus 421B of the second branch 450B and the second AC bus 422A of the first branch 450A and the second AC bus 422B of the second branch 450B.

[0224] By configuring the topology in each of the X-type multi-stage converters as illustrated above, both the positive DC power bus and the negative DC power bus are in parallel with the auxiliary bus or neutral bus, creating mutual inductance rejection that minimizes parasitic inductance by coupling the positive mutual inductance and the negative mutual inductance for commutation loop currents in each of the X-type multi-stage converters.

[0225] Furthermore, the inclusion of clamping diodes internally in the X-type multi-stage converter also reduces the commutation loop in the X-type multi-stage converter.

[0226] The concepts and aspects of the invention described herein enable various heat transfer and cooling systems, including direct cooling, indirect cooling, immersive cooling, one-sided cooling or double-sided cooling.

Claims

[1] Multiphase power inverter (104) for an electric propulsion system, wherein the multiphase power inverter (104) comprises: Several X-type multi-stage power converters (150) designed to transfer electrical power between a high-voltage direct current supply (high-voltage DC supply) and an electrical machine (10), each of the several X-type multi-stage power converters (150) being a solid-state integrated circuit (solid-state IC) comprising: a first branch (150A) and a second branch (150B), wherein the first branch (150A) and the second branch (150B) each contain: a positive DC power bus (110A, 110B); a negative DC power bus (112A, 112B); a neutral bus; a first alternating current bus (AC bus) (121A, 121B); a second AC bus (122A, 122B); a first conductive layer (147A, 147B) and a second conductive layer (148A, 148B); the first branch (150A) further contains: several first semiconductor switches (151) comprising a third semiconductor switch (153), a fourth semiconductor switch (154), a fifth semiconductor switch (155) and a sixth semiconductor switch (156); a first clamping diode (171) and several first conductive spacers (146A) are designed between the fifth semiconductor switch (155) and the positive DC power bus (110A, 110B), the sixth semiconductor switch (156) and the first AC bus (121A, 121B), the fourth semiconductor switch (154) and the second conductive layer (148A, 148B), the third semiconductor switch (153) and the second conductive layer (148A, 148B), and the first clamping diode (171) and the second conductive layer (148A, 148B); the second branch (150B) further contains: several second semiconductor switches, comprising a first semiconductor switch (151), a second semiconductor switch (152), a seventh semiconductor switch (157) and an eighth semiconductor switch (158); a second clamping diode (172) and several second conductive spacers (146B) are positioned between the first semiconductor switch (151) and the positive DC power bus (110A, 110B); the second semiconductor switch (152) and the second AC bus (122A, 122B); the eighth semiconductor switch (158) and the second conductive layer (148A, 148B); the seventh semiconductor switch (157) and the second conductive layer (148A, 148B); and the second clamping diode (172) and the second conductive layer (148A, 148B). the several first semiconductor switches (151), the positive DC power bus (110A) of the first branch (150A), the negative DC power bus (112A) of the first branch (150A), the first AC bus (121A) of the first branch (150A), the second AC bus (122A) of the first branch (150A), the first conductive layer (147A) of the first branch (150A), the second conductive layer (147B) of the first branch (150A) and the first clamping diode (171) are designed in several stages, which include: a first stage formed from the first conductive layer (147A) of the first branch (150A) which is coplanar with the first negative DC power bus (112A) of the first branch (150A), which is coplanar with the second AC bus (122B) of the first branch (150A); a second stage formed from the first clamping diode (171) which is coplanar with the third semiconductor switch (153), which is coplanar with the fourth semiconductor switch (154), which is coplanar with the fifth semiconductor switch (155), which is coplanar with the sixth semiconductor switch (156); and a third stage formed from the second conductive layer (148A) of the first branch (150A) which is coplanar with the first positive DC power bus (110A) of the first branch (150A), which is coplanar with the first AC bus (121A) of the first branch (150A); the several second semiconductor switches (152), the positive DC power bus (110B) of the second branch (150B), the negative DC power bus (112B) of the second branch (150B), the first AC bus (121B) of the second branch (150B), the second AC bus (122B) of the second branch (150B), the first conductive layer (147B) of the second branch (150B), the second conductive layer (148B) of the second branch (150B) and the second clamping diode (172) are designed in several stages, which include: a first stage formed from the first conductive layer (147B) of the second branch (150B) which is coplanar with the first negative DC power bus (112B) of the second branch (150B), which is coplanar with the second AC bus (122B) of the second branch (150B); a second stage formed from the second clamping diode (172) which is coplanar with the first semiconductor switch (151), which is coplanar with the second semiconductor switch (152), which is coplanar with the seventh semiconductor switch (157), which is coplanar with the eighth semiconductor switch (158); and a third stage formed from the second conductive layer (148B) of the second branch (150B), which is coplanar with the first positive DC power bus (110B) of the second branch (150B), which is coplanar with the first AC bus (121B) of the second branch (150B); and wherein the first branch (150A) and the second branch (150B) are electrically connected by connections designed between the first AC bus (121A) of the first branch (150A) and the first AC bus (121B) of the second branch (150B) and the second AC bus (122A) of the first branch (150A) and the second AC bus (122B) of the second branch (150B). [2] Multiphase power inverter (104) according to claim 1, further comprising: a first heat sink (142A); a second heat sink (142B); a first power module substrate (180A) and a second power module substrate (180B); wherein the first conductive layer (147B) of the first branch (150A), the negative DC power bus (112A) of the first branch (150A) and the second AC bus (122B) of the first branch (150A) are arranged adjacent to a first side of the first power module substrate (180A); the first heat sink (142A) is designed to be adjacent to a second side of the first power module substrate (180A); the first conductive layer (147B) of the second branch (150B), the negative DC power bus (112B) of the second branch (150B) and the second AC bus (122B) of the second branch (150B) are designed to be adjacent to a first side of the second power module substrate (180B) and the second heat sink (142B) is designed to be adjacent to a second side of the second power module substrate (180B). [3] Multiphase power inverter (104) according to claim 2, wherein the fifth semiconductor switch (155) and the sixth semiconductor switch (156) are arranged on a first section of the first power module substrate (180A); the first clamping diode (171) and several first gate / source pins (149A) are designed on a second section of the first power module substrate (180A); the fourth semiconductor switch (154) and the third semiconductor switch (153) are designed on a third section of the first power module substrate (180A); the first section, the second section and the third section of the first power module substrate (180A) are coplanar and the second section is designed between the first section and the third section; the first semiconductor switch (151) and the second semiconductor switch (152) are designed on a first section of the second power module substrate (180B); the second clamping diode (172) and several second gate / source pins (149B) are designed on a second section of the second power module substrate (180B); the eighth semiconductor switch (158) and the seventh semiconductor switch (157) are designed on a third section of the second power module substrate (180B); and the first section, the second section and the third section of the second power module substrate (180B) are coplanar and the second section is designed between the first section and the third section. [4] Multiphase power inverter (104) according to claim 3, wherein the multiple first gate / source pins (149A) and the multiple second gate / source pins (149B) are configured to pop out vertically from the first power module substrate (180A) and the second power module substrate (180B), respectively. [5] Multiphase power inverter (104) according to claim 4, wherein the positive DC power bus (110A) of the first branch (150A), the negative DC power bus (112A) of the first branch (150A), the positive DC power bus (110B) of the second branch (150B) and the negative DC power bus (112B) of the second branch (150B) are located at a first end of the X-type multistage power converter (150) and the first AC bus (121A) of the first branch (150A), the second AC bus (122B) of the first branch (150A), the first AC bus (121B) of the second branch (150B) and the second AC bus (122B) of the second branch (150B) are located at a second end of the X-type multistage power converter (150). [6] Multiphase power inverter (104) according to claim 1, wherein each of the multiple first semiconductor switches (151) and the multiple second semiconductor switches (152) contains a single chip. [7] Multiphase power inverter (104) according to claim 6, wherein each individual chip contains a vertical device. [8] Multiphase power inverter (104) according to claim 1, wherein each of the multiple first semiconductor switches (151) and the multiple second semiconductor switches (152) contains multiple chips. [9] Multiphase power inverter (104) according to claim 8, wherein each of the multiple chips includes a vertical device.

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