Method for manufacturing an optoelectronic component and optoelectronic component

Abstract

Method for manufacturing an optoelectronic device (10, 20) with the following steps: - Arranging an optoelectronic semiconductor chip (200) and a reflector (400) on a top surface (111) of a carrier film (110); - Arranging a potting material (500) in an area between the optoelectronic semiconductor chip (200) and the reflector (400); - Forming a molded body (600) wherein the optoelectronic semiconductor chip (200), the reflector (400) and the potting material (500) are embedded in the molded body (600), wherein the shaped body (600) is designed such that a surface (202) of the optoelectronic semiconductor chip (200) facing away from the carrier film (110) is covered by the shaped body (600), the procedure includes the following further step: - Removing part (610) of the molded body (600) to at least partially expose the surface (202) of the optoelectronic semiconductor chip (200) facing away from the carrier film (110).

Description

[0001] The present invention relates to a method for producing an optoelectronic component according to claim 1 and to an optoelectronic component according to claim 16.

[0002] It is known in the prior art to form optoelectronic components, for example, light-emitting diode (LED) components, with housings produced by molding processes. DE 10 2009 036 621 A1 discloses a method in which an optoelectronic semiconductor chip is embedded directly and without additional supports into a molded body produced by a molding process. A front and a back of the optoelectronic semiconductor chip remain uncovered by the molded body to enable electrical contacting of the optoelectronic semiconductor chip. The optoelectronic component obtained by this method has very compact external dimensions.

[0003] JP 2000-261 041 A describes a light-emitting component with a reflector arranged around an LED.

[0004] DE 10 2010 025 319 A1 describes a method for producing an optoelectronic semiconductor component, in which an optoelectronic semiconductor chip is formed with a molded body.

[0005] One object of the present invention is to provide a method for producing an optoelectronic component. This object is achieved by a method having the features of claim 1. A further object of the present invention is to provide an optoelectronic component. This object is achieved by an optoelectronic component having the features of claim 16. Various further developments are specified in the dependent claims.

[0006] A method for producing an optoelectronic component comprises steps of arranging an optoelectronic semiconductor chip and a reflector on a top side of a carrier film, arranging a potting material in a region between the optoelectronic semiconductor chip and the reflector, and forming a molded body, wherein the optoelectronic semiconductor chip, the reflector, and the potting material are embedded in the molded body. Advantageously, the optoelectronic component obtainable by this method has very compact external dimensions. In this method, the optoelectronic semiconductor chip is arranged in a cavity formed in the molded body, which cavity is delimited by the reflector and filled with the potting material. The potting material can protect the optoelectronic semiconductor chip from damage caused by external influences.The reflector can be used to reflect electromagnetic radiation emitted by the optoelectronic semiconductor chip, for example visible light, and to direct it out of the optoelectronic component in order to make it available for use.

[0007] The molded body is formed such that a surface of the optoelectronic semiconductor chip facing away from the carrier film is covered by the molded body. The method comprises a further step of removing a portion of the molded body in order to at least partially expose the surface of the optoelectronic semiconductor chip facing away from the carrier film. Advantageously, the method therefore does not require any covering of the surface of the optoelectronic semiconductor chip facing away from the carrier film during the formation of the molded body to protect the surface of the optoelectronic semiconductor chip facing away from the carrier film from being covered by the material of the molded body, whereby the method can advantageously be carried out particularly simply and cost-effectively. The removal of the portion of the molded body can be carried out, for example, by a grinding-back process.

[0008] In one embodiment of the method, the molded body is formed such that the reflector is exposed on a rear side of the molded body facing away from the carrier film. This advantageously enables electrical contact between the reflector and the rear side of the molded body.

[0009] In one embodiment of the method, this comprises a further step of detaching the molded body from the carrier film. Advantageously, this exposes a surface of the optoelectronic semiconductor chip facing the carrier film and a front side of the molded body facing the carrier film.

[0010] In one embodiment of the method, this comprises a further step of arranging a metallization on a front side and / or a back side of the molded body. The metallization can be arranged on the molded body, for example, to create electrical solder contact surfaces of the optoelectronic component obtainable by the method. The metallization arranged on the front side and / or the back side of the molded body can also serve to create planar electrical connections between electrical connection surfaces of the optoelectronic semiconductor chip and electrical solder contact surfaces of the optoelectronic component obtainable by the method. The metallization can be arranged on the front side and / or the back side of the molded body, for example, by vapor deposition.

[0011] In one embodiment of the method, the metallization forms an electrically conductive connection between an electrical connection pad of the optoelectronic semiconductor chip and the reflector. Advantageously, the reflector in the optoelectronic component obtainable by the method can thereby serve to establish an electrical contact to the electrical connection pad of the optoelectronic semiconductor chip of the optoelectronic component through the molded body of the optoelectronic component. This advantageously allows the optoelectronic component to be manufactured particularly cost-effectively and with particularly compact external dimensions.

[0012] In one embodiment of the method, an electrically conductive contact element is arranged on the upper side of the carrier film and embedded into the molded body together with the optoelectronic semiconductor chip. The contact element forms an electrically conductive connection between a front side and a back side of the molded body. Advantageously, in the optoelectronic component obtainable by this method, the contact element can serve to establish an electrical connection to an electrical connection pad of the optoelectronic semiconductor chip through the molded body of the optoelectronic component.

[0013] In one embodiment of the method, the metallization forms an electrically conductive connection between an electrical connection pad of the optoelectronic semiconductor chip and the contact element. Advantageously, in the optoelectronic component obtainable by this method, the metallization and the contact element establish an electrically conductive connection extending through the molded body of the optoelectronic component to the electrical connection pad of the optoelectronic semiconductor chip.

[0014] In one embodiment of the method, the reflector is first arranged on the carrier film. The optoelectronic semiconductor chip is then arranged on the carrier film. This advantageously makes it possible to align the optoelectronic semiconductor chip with the reflector already arranged on the carrier film during the arrangement of the optoelectronic semiconductor chip on the carrier film. This enables particularly precise relative positioning of the reflector and the optoelectronic semiconductor chip. This advantageously allows the method to be carried out simply and with high precision.

[0015] In one embodiment of the method, the reflector is formed as a metal sheet having embossed structures. In this case, the reflector advantageously has particularly favorable optical reflection properties. Furthermore, the reflector formed as a metal sheet having embossed structures can advantageously mechanically stabilize the molded body of the optoelectronic component obtainable by the method by being embedded in the molded body.

[0016] In one embodiment of the method, the optoelectronic semiconductor chip is arranged on the carrier film such that a light-emitting surface of the optoelectronic semiconductor chip faces the carrier film. Advantageously, the light-emitting surface of the optoelectronic semiconductor chip remains uncovered by the material of the molded body during formation of the molded body, whereby electromagnetic radiation emitted at the light-emitting surface of the optoelectronic semiconductor chip can advantageously be emitted unhindered in the optoelectronic component obtainable by the method.

[0017] In one embodiment of the method, the optoelectronic semiconductor chip is designed as a volume-emitting light-emitting diode chip. Advantageously, in the optoelectronic component obtainable by this method, electromagnetic radiation emitted at side surfaces of the optoelectronic semiconductor chip designed as a volume-emitting light-emitting diode chip can be reflected by the reflector and thus diverted from the optoelectronic component obtainable by the method and used.

[0018] In one embodiment of the method, the encapsulating material is applied using a dispensing method. For example, the encapsulating material can be applied using needle dispensing. Advantageously, a dispensing method enables particularly precise measurement of the amount of encapsulating material applied in the region between the optoelectronic semiconductor chip and the reflector.

[0019] In one embodiment of the method, the encapsulation material is arranged such that a surface of the optoelectronic semiconductor chip facing away from the carrier film is not covered by the encapsulation material. Advantageously, the surface of the optoelectronic semiconductor chip facing away from the carrier film remains exposed, which makes it possible to contact an electrical contact surface of the optoelectronic semiconductor chip arranged on the surface of the optoelectronic semiconductor chip facing away from the carrier film.

[0020] In one embodiment of the process, the molded body is formed by compression molding. This advantageously enables simple and cost-effective implementation of the process.

[0021] In one embodiment of the method, a plurality of optoelectronic semiconductor chips are embedded in the molded body. The method comprises a further step of dividing the molded body to obtain a plurality of optoelectronic components. This allows for the parallel production of multiple optoelectronic components in common operations. This enables a reduction in the manufacturing costs per individual optoelectronic component.

[0022] An optoelectronic component comprises an optoelectronic semiconductor chip and a reflector. A potting material is arranged in a region between the optoelectronic semiconductor chip and the reflector. The optoelectronic semiconductor chip, the reflector, and the potting material are embedded in a molded body. A front side of the optoelectronic semiconductor chip is flush with a front side of the molded body. A rear side of the optoelectronic semiconductor chip is flush with a rear side of the molded body. This optoelectronic component advantageously has very compact external dimensions. In this optoelectronic component, the optoelectronic semiconductor chip is arranged in a cavity formed in the molded body, which cavity is filled with the potting material and delimited by the reflector.Electromagnetic radiation emitted by the optoelectronic semiconductor chip of the optoelectronic component can be reflected by the reflector and thus guided out of the optoelectronic component and used. The optoelectronic semiconductor chip can be designed, for example, as a volume-emitting light-emitting diode chip. The back of the optoelectronic semiconductor chip of the optoelectronic component, which is flush with the back of the molded body, enables easy electrical contacting of the optoelectronic semiconductor chip of the optoelectronic component. Likewise, the front of the optoelectronic semiconductor chip, which is flush with the front of the molded body, enables easy electrical contacting of the optoelectronic semiconductor chip of the optoelectronic component.

[0023] In one embodiment of the optoelectronic component, an electrically conductive contact element is embedded in the molded body. A front side of the contact element is flush with the front side of the molded body. A rear side of the contact element is flush with the rear side of the molded body. The contact element thus extends through the molded body between the front side of the molded body and the rear side of the molded body. The contact element thus forms a through-plating extending through the molded body, which, for example, makes it possible to establish an electrically conductive connection to an electrical connection pad of the optoelectronic semiconductor chip through the molded body of the optoelectronic component.

[0024] The above-described properties, features and advantages of this invention, as well as the manner in which they are achieved, will become clearer and more clearly understandable in connection with the following description of the embodiments, which are explained in more detail in connection with the drawings. In each case, in a schematic representation Fig. 1 a sectional view of a carrier with a carrier film; Fig. 2 a sectional view of the carrier with an optoelectronic semiconductor chip arranged on the carrier film and a contact element arranged on the carrier film; Fig. 3 a sectional view of the carrier with a reflector arranged on the carrier film; Fig. 4 a sectional view of the carrier with a potting material arranged between the optoelectronic semiconductor chip and the reflector; Fig. 5 a sectional view of the carrier with a molded body formed over the carrier film, in which the optoelectronic semiconductor chip, the contact element, the reflector and the potting material are embedded; Fig. 6 a sectional view of the molded body after detachment from the carrier film; Fig. 7 a sectional view of the molded body after removal of a part of the molded body; Fig. 8 is a sectional side view of a first optoelectronic component; and Fig. 9 a sectional side view of a second optoelectronic component.

[0025] Fig. Figure 1 shows a schematic sectional side view of a carrier 100. The carrier 100 can be part of a system or a tool for performing a molding process, for example, part of a compression molding system. The carrier 100 forms part of the mold of this system.

[0026] In Fig. In the example schematically illustrated in Figure 1, the carrier 100 has a substantially flat upper side. A carrier film 110 is arranged on the upper side of the carrier 100, which has an upper side 111 facing away from the carrier 100. The carrier film 110 can be designed, for example, as an adhesive film. The carrier film 110 preferably has a releasable adhesive layer, for example a thermally releasable adhesive layer, on its upper side 111 and / or on its underside opposite the upper side 111.

[0027] Fig. Figure 2 shows a schematic sectional side view of the carrier 100 and the carrier film 110 in one of the representations of Fig. 1 chronologically subsequent processing stage. An optoelectronic semiconductor chip 200 and a contact element 300 are arranged on the upper side 111 of the carrier film 110. The optoelectronic semiconductor chip 200 and the contact element 300 are arranged laterally adjacent to one another at a distance from one another.

[0028] The optoelectronic semiconductor chip 200 is configured to emit electromagnetic radiation, for example, visible light. The optoelectronic semiconductor chip 200 can be configured, for example, as a light-emitting diode (LED) chip. The optoelectronic semiconductor chip 200 has a front side 201 and a rear side 202 opposite the front side 201. The front side 201 of the optoelectronic semiconductor chip 200 can, for example, form a radiation emission surface of the optoelectronic semiconductor chip 200, at which radiation is emitted during operation of the optoelectronic semiconductor chip 200. The optoelectronic semiconductor chip 200 can also be configured as a volume-emitting semiconductor chip.In this case, electromagnetic radiation can also be emitted during operation of the optoelectronic semiconductor chip 200 to the side surfaces of the optoelectronic semiconductor chip 200 connecting the front side 201 and the back side 202.

[0029] The optoelectronic semiconductor chip 200 is arranged on the upper side 111 of the carrier film 110 on the carrier 100 such that the front side 201 of the optoelectronic semiconductor chip 200 faces the upper side 111 of the carrier film 110 and is in contact therewith.

[0030] The contact element 300 comprises an electrically conductive material, for example, a doped semiconductor material or a metal. The contact element 300 can also be referred to as a via chip. The contact element 300 has a top side 301 and a bottom side 302 opposite the top side 301. An electrically conductive connection exists between the top side 301 and the bottom side 302 of the contact element 300.

[0031] The contact element 300 is arranged on the upper side 111 of the carrier film 110 on the carrier 100 such that the upper side 301 of the contact element 300 faces the upper side 111 of the carrier film 110 and is in contact with it.

[0032] The optoelectronic semiconductor chip 200 and the contact element 300 have the same height in the direction perpendicular to the top side 111 of the carrier film 110, within the limits of manufacturing accuracy. This means that the front side 201 of the optoelectronic semiconductor chip 200 and the top side 301 of the contact element 300 are arranged in a common plane at the top side 111 of the carrier film 110 on the carrier 100. The back side 202 of the optoelectronic semiconductor chip 200 and the bottom side 302 of the contact element 300 also lie essentially in a common plane.

[0033] Fig. 3 shows a schematic sectional side view of the carrier 100, the optoelectronic semiconductor chip 200 arranged on the upper side 111 of the carrier film 110 and the contact element 300 in one of the representations of the Fig. 2 subsequent processing stage. A reflector 400 has been arranged on the upper side 111 of the carrier film 110 on the carrier 100.

[0034] The reflector 400 comprises a material with good optical reflection. Preferably, the material of the reflector 400 is also electrically conductive and mechanically stable. The reflector 400 can be made of metal, for example. The reflector 400 is preferably formed as an embossed metal sheet.

[0035] The reflector 400 has an embossed reflector structure, which may, for example, have the shape of the lateral surface of a truncated cone or a truncated pyramid. The reflector 400 is arranged on the upper side 111 of the carrier film 110 on the carrier 100 such that the reflector structure surrounds the optoelectronic semiconductor chip 200 in a ring shape. The optoelectronic semiconductor chip 200 is preferably arranged approximately centrally in the ring-shaped reflector structure of the reflector 400.

[0036] The reflector structure of reflector 400 has a front side 401 and a rear side 402 opposite the front side 401. The front side 401 of the reflector structure of reflector 400 faces the top side 111 of the carrier film 110 and is in contact with it. The embossed reflector structure of reflector 400 widens conically from the rear side 402 to the top side 401.

[0037] In addition to the embossed reflector structure, the reflector 400 may have further sections which Fig. 3 are not shown. For example, the reflector 400 can have sheet metal sections on its front side 401 that adjoin the embossed reflector structure and that rest against the top side 111 of the carrier film 110 on the carrier 100. However, further sections of the reflector 400 can also adjoin the embossed reflector structure of the reflector 400 on the rear side 402 of the reflector 400.

[0038] The reflector 400 is arranged on the upper side 111 of the carrier film 110 on the carrier 100 in such a way that both the optoelectronic semiconductor chip 200 and the contact element 300 are not in contact with the reflector 400 and are thus electrically insulated from the reflector 400.

[0039] In the example shown, the reflector 400 has a height between its rear side 402 and its front side 401 that is perpendicular to the top side 111 of the carrier film 110 and essentially corresponds to the height of the optoelectronic semiconductor chip 200 between its rear side 202 and its front side 201. However, it would also be possible to design the reflector 400 with a lower height. In this case, the rear side 402 of the reflector 400 is closer to the top side 111 of the carrier film 110 than the rear side 202 of the optoelectronic semiconductor chip 200.

[0040] It is, contrary to the representation of the Fig. 2 and Fig. 3 and the above description, it is also possible to arrange the reflector 400 on the carrier 100 before the optoelectronic semiconductor chip 200 and / or before the contact element 300 on the top side 111 of the carrier film 110. This offers the advantage that, after the reflector 400 has been arranged on the top side 111 of the carrier film 110, the optoelectronic semiconductor chip 200 can be aligned with the embossed reflector structure of the reflector 400 and placed on the top side 111 of the carrier film 110 on the carrier 100.

[0041] Fig. 4 shows a schematic sectional side view of the carrier 100 with the elements arranged on the upper side 111 of the carrier film 110 in one of the representations of the Fig. 3 chronologically subsequent processing stage. An area between the optoelectronic semiconductor chip 200 and the reflector 400 on the upper side 111 of the carrier film 110 on the carrier 100 has been filled with a potting material 500.

[0042] The encapsulation material 500 is preferably substantially transparent or translucent to electromagnetic radiation emitted by the optoelectronic semiconductor chip 200. The encapsulation material 500 may comprise, for example, a silicone.

[0043] The encapsulating material 500 can be arranged in the region between the optoelectronic semiconductor chip 200 and the reflector 400, for example, by means of a dispensing method. In particular, the encapsulating material 500 can be arranged, for example, by needle dispensing. The encapsulating material 500 fills the region between the optoelectronic semiconductor chip 200 and the embossed reflector structure of the reflector 400, starting from the top side 111 of the carrier film 110. Preferably, sufficient encapsulating material 500 is poured into the region between the optoelectronic semiconductor chip 200 and the reflector 400 that the encapsulating material 500 is approximately flush with the rear side 402 of the reflector 400. Wetting of the rear side 202 of the optoelectronic semiconductor chip 200 by the encapsulating material 500 should be avoided.

[0044] Fig. 5 shows a schematic sectional side view of the carrier 100 and the components arranged on the upper side 111 of the carrier film 110 in one of the representations of the Fig. 4 chronologically subsequent processing stage. A molded body 600 has been formed on the upper side 111 of the carrier film 110 on the carrier 100. The optoelectronic semiconductor chip 200, the contact element 300, the reflector 400, and the encapsulating material 500 arranged in the region between the optoelectronic semiconductor chip 200 and the reflector 400 have been embedded in the molded body 600.

[0045] The molded body 600 can be produced by a molding process, in particular, for example, by compression molding. In this case, a molding material is introduced into a mold formed by the carrier 100 and a further molded part opposite the top side 111 of the carrier film 110 arranged on the carrier 100. As a result, the molded body 600 is formed with a front side 601 and a back side 602 opposite the front side 601. The front side 601 of the molded body 600 faces the top side 111 of the carrier film 110. The back side 602 of the molded body 600 is formed on the further molded part opposite the carrier 100.

[0046] The molding material used to form the molded body 600 is preferably a plastic material. The molding material may, for example, comprise a silicone or an epoxy resin. The molding material used to form the molded body 600 may be transparent, translucent, or opaque.

[0047] The optoelectronic semiconductor chip 200, the contact element 300, the reflector 400, and the encapsulation material 500 arranged between the optoelectronic semiconductor chip 200 and the reflector 400 are embedded in the molded body 600 during the formation of the molded body 600. In this case, the front side 201 of the optoelectronic semiconductor chip 200, which lies against the top side 111 of the carrier film 110, the top side 301 of the contact element 300, and the front side 401 of the reflector 400 are not covered by the material of the molded body 600 and, after the formation of the molded body 600, are essentially flush with the front side 601 of the molded body 600.

[0048] The height of the molded body 600 measured from the rear side 602 to the front side 601 of the molded body 600 in the direction perpendicular to the top side 111 of the carrier film 110 is in the Fig. 5, the height of the molded body 600 is greater than the height of the optoelectronic semiconductor chip 200, the contact element 300 and the reflector 400. As a result, the rear side 202 of the optoelectronic semiconductor chip 200, the underside 302 of the contact element 300, the rear side 402 of the reflector 400 and the encapsulation material 500 arranged between the optoelectronic semiconductor chip 200 and the reflector 400 are covered by a part 610 of the molded body 600 adjacent to the rear side 602 of the molded body 600.

[0049] However, it is also possible to form the molded body 600 with a thickness corresponding to the height of the optoelectronic semiconductor chip 200, the contact element 300 and the reflector 400, so that the rear side 302 of the optoelectronic semiconductor chip 200, the underside 302 of the contact element 300, the rear side 402 of the reflector 400 and the potting material 500 arranged between the optoelectronic semiconductor chip 200 and the reflector 400 are not covered by the material of the molded body 600 and thus are essentially flush with the rear side 602 of the molded body 600.This can be achieved, for example, by covering the rear side 202 of the optoelectronic semiconductor chip 200, the underside 302 of the contact element 300, the rear side 402 of the reflector 400 and the potting material 500 arranged between the optoelectronic semiconductor chip 200 and the reflector 400 by means of a film during the formation of the molded body 600.

[0050] Fig. 6 shows a schematic sectional side view of the molded body 600 in one of the representations of the Fig. 5 chronologically subsequent processing stage. The molded body 600 has been detached from the upper side 111 of the carrier film 110, and thus also from the carrier 100.

[0051] The detachment of the molded body 600 from the upper side 111 of the carrier film 110 can be achieved, for example, by thermal or chemical treatment of the carrier film 110, by irradiating the carrier film 110 with light, or by another treatment of the carrier film 110. However, the detachment of the molded body 600 from the upper side 111 of the carrier film 110 can also be achieved by purely mechanical means.

[0052] Fig. Figure 7 shows a schematic sectional side view of the molded body 600 in one of the representations of the Fig. 6 subsequent processing stage. The part 610 of the molded body 600 adjacent to the rear side 602 of the molded body 600 has been removed.

[0053] By removing the part 610 of the molded body 600 adjacent to the rear side 602 of the molded body 600, the rear side 202 of the optoelectronic semiconductor chip 200, the underside 302 of the contact element 300, the rear side 402 of the reflector 400, and the encapsulating material 500 arranged between the optoelectronic semiconductor chip 200 and the reflector 400 have been exposed and now end approximately flush with the recessed rear side 602 of the molded body 600. The removal of the part 610 of the molded body 600 adjacent to the rear side 602 of the molded body can be carried out, for example, by means of a grinding process.

[0054] If the molded body 600 is already during the formation of the molded body 600 in Fig. 5 is manufactured in such a way that the rear side 202 of the optoelectronic semiconductor chip 200, the underside 302 of the contact element 300, the rear side 402 of the reflector 400 and the potting material 500 arranged between the optoelectronic semiconductor chip 200 and the reflector 400 are not covered by the molded body 600 and are essentially flush with the rear side 602 of the molded body 600, the removal of the part 610 of the molded body 600 adjacent to the rear side 602 can be omitted.

[0055] Fig. 8 shows a schematic sectional side view of the molded body 600 and the components embedded in the molded body 600 in one of the representations of the Fig. 7 chronologically subsequent processing stage. A metallization 700 has been arranged on the rear side 602 and the front side 601 of the molded body 600. Through further processing, a first optoelectronic component 10 has been formed from the molded body 600 and the components embedded in the molded body 600.

[0056] The metallization 700 can be arranged on the front side 601 and the back side 602 of the molded body 600, for example, by vapor deposition or another planar coating process. The metallization 700 comprises an electrically conductive metal. The metallization 700 can be arranged on the front side 601 and the back side 602 of the molded body 600 in separate, consecutive steps. Different materials can also be used.

[0057] The metallization 700 comprises a first soldering contact area 710 arranged on the rear side 202 of the optoelectronic semiconductor chip 200. The first soldering contact area 710 is electrically conductively connected to a rear electrical connection area 220 on the rear side 202 of the optoelectronic semiconductor chip 200.

[0058] The metallization 700 further comprises a second solder contact surface 720 arranged on the underside 302 of the contact element 300. The second solder contact surface 720 is electrically conductively connected to the contact element 300.

[0059] Furthermore, the metallization 700 comprises a connecting section 730 arranged on the front side 601 of the molded body 600. The connecting section 730 extends on the front side 601 of the molded body 600 from the front side 201 of the optoelectronic semiconductor chip 200 embedded in the molded body 600 to the top side 301 of the contact element 300 embedded in the molded body 600.

[0060] The connecting section 730 is electrically conductively connected to a front-side electrical connection pad 210 of the optoelectronic semiconductor chip 200, which is formed on the front side 201 of the optoelectronic semiconductor chip 200. Furthermore, the connecting section 730 is electrically conductively connected to the contact element 300. Thus, the connecting section 730 also establishes an electrically conductive connection between the front-side electrical connection pad 210 of the optoelectronic semiconductor chip 200 and the second solder contact pad 720 on the rear side 602 of the molded body 600.

[0061] The solder contact surfaces 710, 720 arranged on the rear side 602 of the molded body 600 of the first optoelectronic component 10 can serve for electrically contacting the first optoelectronic component 10. The first optoelectronic component 10 can, for example, be designed as a surface-mountable SMD component and be provided for electrical contacting by reflow soldering.

[0062] If a suitable electrical voltage is applied to the first optoelectronic component 10 via the first soldering contact area 710 and the second soldering contact area 720, this electrical voltage is applied to the optoelectronic semiconductor chip 200 via the rear electrical connection area 220 and the front electrical connection area 210 of the optoelectronic semiconductor chip 200 and causes the latter to emit electromagnetic radiation, for example visible light.

[0063] Electromagnetic radiation emitted at the front side 201 of the optoelectronic semiconductor chip 200 can be radiated directly by the first optoelectronic component 10. Electromagnetic radiation emitted at the side surfaces of the optoelectronic semiconductor chip 200 connecting the front side 201 to the rear side 202 of the optoelectronic semiconductor chip 200 can pass through the encapsulation material 500 surrounding the optoelectronic semiconductor chip 200 to the reflector 400 and is reflected by the reflector toward the front side 601 of the molded body 600, where this electromagnetic radiation can also exit the first optoelectronic component 10 and be radiated by the first optoelectronic component 10.

[0064] The molded body 600 forms the housing and the supporting part of the first optoelectronic component 10. The molded body 600 carries the optoelectronic semiconductor chip 200 and the solder contact surfaces 710, 720 of the first optoelectronic component 10. A further carrier is not required and is not present.

[0065] It is possible to use the Fig. 1 to 8, a plurality of first optoelectronic components 10 are produced in parallel in common operations. For this purpose, the carrier 100 and the carrier film 110 are provided with a sufficient lateral size. Subsequently, a plurality of optoelectronic semiconductor chips 200 and a plurality of contact elements 300 are arranged on the upper side 111 of the carrier film 110, for example, in a regular two-dimensional matrix arrangement. In this case, one optoelectronic semiconductor chip 200 and one contact element 300 each form a pair, from which a first optoelectronic component 10 is later formed. For each first optoelectronic component 10 to be formed, one reflector 400 with an embossed reflector structure is arranged on the upper side 111 of the carrier film 110. A one-piece reflector 400 can also be used, which has one embossed reflector structure per optoelectronic semiconductor chip 200.In the subsequent processing step, the areas between the optoelectronic semiconductor chips 200 and the respectively assigned reflector structure of the reflector 400 or the plurality of reflectors 400 are filled with the encapsulating material 500. Then, the optoelectronic semiconductor chips 200, the contact elements 300, and the reflectors 400 of all the first optoelectronic components 10 to be formed are embedded in a common molded body 600. The molded body 600 thus formed can also be referred to as a panel and, for example, can have the shape of a wafer.After detaching the molded body 600 from the top side 111 of the carrier film 110 and removing the part 610 of the molded body 600 adjacent to the back side 602, the metallization 700 is arranged on the front side 601 and the back side 602 of the molded body 600 such that a first soldering contact area 710, a second soldering contact area 720, and a connecting section 730 are formed for each first optoelectronic component 10 to be formed. Only then are the individual first optoelectronic components 10 separated by dividing the molded body 600.

[0066] Fig. 9 shows a schematic sectional side view of a second optoelectronic component 20. The second optoelectronic component 20 and the method used to produce the second optoelectronic component 20 have great similarities with the first optoelectronic component 10 and the method described with reference to Fig. 1 to 8 for producing the first optoelectronic component 10. Corresponding components of the first optoelectronic component 10 and the second optoelectronic component 20 are shown in Fig. 8 and Fig. 9 are provided with the same reference numerals.

[0067] The second optoelectronic component 20 differs from the first optoelectronic component 10 in that the contact element 300 of the first optoelectronic component 10 is not present in the second optoelectronic component 20. Instead, in the second optoelectronic component 20, the reflector 400 serves to provide an electrically conductive connection between the front side 601 of the molded body 600 and the back side 602 of the molded body 600. The second soldering contact surface 720 in the second optoelectronic component 20 is arranged on the back side 602 of the molded body 600 and the back side 402 of the reflector 400 embedded in the molded body 600 in such a way that an electrically conductive connection exists between the reflector 400 and the second soldering contact surface 720.In the second optoelectronic component 20, the connecting section 730 is arranged on the front side 601 of the molded body 600, the front side 201 of the optoelectronic semiconductor chip 200 and the front side 401 of the reflector 400 such that there is an electrically conductive connection between the connecting section 730 and the front-side electrical connection surface 210 of the optoelectronic semiconductor chip 200 arranged on the front side 201 of the optoelectronic semiconductor chip 200, as well as an electrically conductive connection between the connecting section 730 and the reflector 400. Thus, the connecting portion 730 and the reflector 400 establish an electrically conductive connection between the second solder contact area 720 of the second optoelectronic component 20 and the front-side electrical connection area 210 of the optoelectronic semiconductor chip 200 of the second optoelectronic component 20.

[0068] The second optoelectronic component 20 has the advantage over the first optoelectronic component 10 that it can be manufactured more cost-effectively and can be designed with more compact external dimensions due to the omission of the contact element 300 embedded in the molded body 600.

[0069] Instead of the optoelectronic semiconductor chip 200 with the front-side electrical connection area 210 arranged on the front side 201 and the rear-side electrical connection area 220 arranged on the rear side 202, it is possible to use an optoelectronic semiconductor chip in which both electrical connection areas are arranged on the front side or on the rear side of the optoelectronic semiconductor chip.

[0070] If both electrical connection surfaces are arranged on the front side of the optoelectronic semiconductor chip, the optoelectronic component produced with this optoelectronic semiconductor chip can have two contact elements embedded in the molded body (configured like contact element 300 of the first optoelectronic component 10), which are embedded in the molded body and are electrically conductively connected to the two electrical connection surfaces of the optoelectronic semiconductor chip via two connecting sections (configured like connecting section 730 of the first optoelectronic component 10). The first soldering contact surface and the second soldering contact surface of this optoelectronic component are then arranged on the undersides of the two contact elements.

[0071] If both electrical connection surfaces of the optoelectronic semiconductor chip are formed on its rear side, the solder contact surfaces of the optoelectronic component produced with this optoelectronic semiconductor chip are both arranged on the rear side of the optoelectronic semiconductor chip. In this case, the optoelectronic component can again dispense with the provision of contact elements, such as contact element 300 of the first optoelectronic component 10. List of reference symbols 10 first optoelectronic component 20 second optoelectronic component 100 carriers 110 carrier film 111 Top 200 optoelectronic semiconductor chips 201 Front 202 back 210 front electrical connection surface 220 rear electrical connection surface 300 contact element 301 top 302 subpage 400 reflector 401 Front 402 back 500 potting material 600 molded bodies 601 front 602 back 610 Part of the molded body 700 Metallization 710 first solder contact surface 720 second solder contact surface 730 connecting section

Claims

[1] Method for producing an optoelectronic component (10, 20) with the following steps: - arranging an optoelectronic semiconductor chip (200) and a reflector (400) on an upper side (111) of a carrier film (110); - arranging a potting material (500) in a region between the optoelectronic semiconductor chip (200) and the reflector (400); - forming a molded body (600), wherein the optoelectronic semiconductor chip (200), the reflector (400) and the potting material (500) are embedded in the molded body (600), wherein the molded body (600) is formed such that a surface (202) of the optoelectronic semiconductor chip (200) facing away from the carrier film (110) is covered by the molded body (600), the method comprising the following further step: - removing a part (610) of the molded body (600) in order to at least partially expose the surface (202) of the optoelectronic semiconductor chip (200) facing away from the carrier film (110). [2] Method according to one of the preceding claims, wherein the shaped body (600) is formed such that the reflector (400) is exposed on a rear side (602) of the shaped body (600) facing away from the carrier film (110). [3] A method according to any one of the preceding claims, wherein the method comprises the following further step: - Detaching the molded body (600) from the carrier film (110). [4] A method according to any one of the preceding claims, wherein the method comprises the following further step: - Arranging a metallization (700) on a front side (601) and / or a back side (602) of the molded body (600). [5] Method according to claim 4, wherein the metallization (700) forms an electrically conductive connection between an electrical connection surface (210) of the optoelectronic semiconductor chip (200) and the reflector (400). [6] Method according to one of the preceding claims, wherein an electrically conductive contact element (300) is arranged on the upper side (111) of the carrier film (110) and embedded together with the optoelectronic semiconductor chip (200) in the molded body (600), wherein the contact element (300) forms an electrically conductive connection between a front side (601) and a back side (602) of the molded body (600). [7] Method according to claim 6 and one of claims 4 and 5, wherein the metallization (700) forms an electrically conductive connection between an electrical connection surface (210) of the optoelectronic semiconductor chip (200) and the contact element (300). [8] Method according to one of the preceding claims, wherein first the reflector (400) is arranged on the carrier film (110) and then the optoelectronic semiconductor chip (200) is arranged on the carrier film (110). [9] Method according to one of the preceding claims, wherein the reflector (400) is formed as a metal sheet having embossed structures. [10] Method according to one of the preceding claims, wherein the optoelectronic semiconductor chip (200) is arranged on the carrier film (110) such that a light-emitting surface (201) of the optoelectronic semiconductor chip (200) faces the carrier film (110). [11] Method according to one of the preceding claims, wherein the optoelectronic semiconductor chip (200) is designed as a volume-emitting light-emitting diode chip. [12] Method according to one of the preceding claims, wherein the arranging of the potting material (500) is carried out by a dosing method. [13] Method according to one of the preceding claims, wherein the encapsulation material (500) is arranged such that a surface (202) of the optoelectronic semiconductor chip (200) facing away from the carrier film (110) is not covered by the encapsulation material (500). [14] Method according to one of the preceding claims, wherein the shaped body (600) is formed by compression molding. [15] Method according to one of the preceding claims, wherein a plurality of optoelectronic semiconductor chips (200) are embedded in the molded body (600), the method comprising the following further step: - dividing the molded body (600) to obtain a plurality of optoelectronic components (10, 20). [16] Optoelectronic component (10, 20) with an optoelectronic semiconductor chip (200) and a reflector (400), wherein a potting material (500) is arranged in a region between the optoelectronic semiconductor chip (200) and the reflector (400), wherein the optoelectronic semiconductor chip (200), the reflector (400) and the potting material (500) are embedded in a molded body (600), wherein a front side (201) of the optoelectronic semiconductor chip (200) is flush with a front side (601) of the molded body (600), wherein a rear side (202) of the optoelectronic semiconductor chip (200) is flush with a rear side (602) of the molded body (600). [17] Optoelectronic component (10) according to claim 16, wherein an electrically conductive contact element (300) is embedded in the molded body (600), wherein a front side (301) of the contact element (300) is flush with the front side (601) of the shaped body (600), wherein a rear side (302) of the contact element (300) is flush with the rear side (602) of the molded body (600).

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