Optoelectronic device with fuse

Abstract

Optoelectronic device (1) comprising a first electrode (20), wherein the first electrode (20) has a plurality of electrode elements (21) which are arranged separately from each other, so that there is a space between them, wherein the first electrode (20) also has a conducting structure (22) which is designed in such a way that it electrically connects adjacent electrode elements (21) to each other and thereby forms a fusible link between the connected adjacent electrode elements (21), wherein the conducting structure (22) comprises a conducting structure layer (22a) which adjoins the electrode elements (21) and electrically connects the adjacent electrode elements (21) to each other, thereby acting as the fuse, and wherein - the device further comprises a functional layer structure (10) which is suitable for emitting electromagnetic radiation when the functional layer structure (10) is energized, wherein - the guide structure (22) is set up to supply current to the functional layer structure, and the functional layer structure (10) covers the guide structure (22) on its side facing away from a support, and - the guiding structure (22) is in full contact with the functional layer structure (10).

Description

[0001] The invention relates to an optoelectronic device with a fuse and a method for manufacturing such an optoelectronic device.

[0002] From US patent 2013 / 0187186A1, a light-emitting optoelectronic device is known in which an electrode consists of several separately arranged electrode elements. These are supplied with electrical current via separate leads equipped with fuses so that, in the event of a short circuit, they are individually disconnected from a power source to prevent further damage to the optoelectronic device.

[0003] The publications US 2012 / 0 153 831 A1, JP 2011 - 60 680 A and WO 2013 / 098 951 describe lighting devices.

[0004] Document US 2014 / 0 306 214 A1 describes an organic luminescent device.

[0005] Document US 2010 / 0 140 598 A1 describes a large-area light-emitting diode.

[0006] The object of the present invention is to provide such overcurrent protection using simpler means. This object is achieved by the features of the independent claim. Preferred embodiments are specified in the dependent claims.

[0007] An optoelectronic device comprises an electrode, hereinafter referred to as the first electrode, which is preferably layered. Layered in this context refers to layers and also to layers with discontinuities. The first electrode comprises a plurality of electrode elements arranged separately from one another, with a gap between them, and a conductive structure.

[0008] The conductive structure electrically connects the electrode elements to each other, thereby forming a fusible link between the connected adjacent electrode elements.

[0009] Either the conductive structure comprises a conductive layer that borders the electrode elements and electrically connects adjacent electrode elements to each other, thereby acting as the fuse, or the conductive structure comprises the conductive layer and also extends into the space between the electrode elements, wherein on the one hand the conductive layer adjacent to the electrode elements electrically connects neighboring electrode elements to each other and thereby acts as the fuse, and on the other hand the conductive structure electrically connects neighboring electrode elements to each other via the space and thereby acts as the fuse.

[0010] The conductive structure is designed to act as a fusible link between the electrode elements. In other words, the conductive structure is designed to melt in the event of an overcurrent before the electrode elements melt, thus interrupting the electrical connection formed by the conductive structure between adjacent electrode elements.

[0011] The optoelectronic device comprises a functional layer structure which is suitable for emitting electromagnetic radiation when the functional layer structure is energized, wherein the conducting structure is arranged for energizing the functional layer structure and the functional layer structure covers the conducting structure.

[0012] This means, in particular, that the conductive structure is not arranged laterally at a distance from the functional layer structure, i.e., next to the functional layer structure. Rather, in this embodiment, the conductive structure, together with the electrode elements, forms a planar first electrode which is covered by the functional layer structure. The functional layer structure can, in particular, completely cover the conductive structure on its side facing away from a support, such as a glass substrate. The functional layer structure is arranged, in particular, vertically above the conductive structure and can, at least in some areas, directly adjoin it. In this way, it is possible to make the electrode elements, which, for example, form highly transparent conductive islands, so small, for example, so thin, that when the defect areas are isolated, the resulting dark spots (i.e., black spots) are not visible.“dark spots”) are barely or not at all visible to the eye.

[0013] Preferably, the optoelectronic device further comprises a second electrode and the functional layer structure. The first and second electrodes are arranged relative to the functional layer structure such that the latter can be energized by the electrodes. The functional layer structure is capable of emitting electromagnetic radiation when appropriately energized by the first and second electrodes. The second electrode can also be layered.

[0014] Preferably, the functional layer structure comprises at least one functional layer that includes or consists of an organic material. Particularly preferably, the optoelectronic device is an organic light-emitting diode (OLED), e.g., an OLED that emits light through a cover glass and / or a substrate.

[0015] The optoelectronic device can be configured to emit the electromagnetic radiation emittable when the functional layer structure is energized via the first and second electrodes through the first and / or the second electrode. Preferably, however, the optoelectronic device is configured to emit the electromagnetic radiation emittable when the functional layer structure is energized via the first and second electrodes through the first electrode.

[0016] As previously described, the functional layer structure can be energized via the two electrodes. Specifically, the functional layer structure can be energized via the second electrode and the electrode elements of the first electrode. However, it is possible that areas located between the electrode elements will not emit electromagnetic radiation.

[0017] According to a preferred embodiment, the guide structure is designed and arranged relative to the functional layer structure such that the functional layer structure can be energized by means of the guide structure, or the guide structure and the electrode elements are designed and arranged relative to the functional layer structure such that the functional layer structure can be energized by means of both the guide structure and the electrode elements. Accordingly, in these preferred embodiments, regions of the functional layer structure located between the electrode elements can also be energized by means of the first electrode, so that they emit electromagnetic radiation.

[0018] According to a particularly preferred embodiment, the first electrode and the second electrode are configured and arranged relative to the functional layer structure such that the functional layer structure can be energized by means of the first and second electrodes such that a current density at a position of the functional layer structure located within one of the electrode elements, as viewed in projection onto a layer surface of the first electrode, differs from a current density at a position of the functional layer structure located in the space midway between two interfaces of the electrode elements, as viewed in projection onto the layer surface of the first electrode, by less than 50%, preferably less than 20%, and particularly preferably less than 5%. The layer surface is defined as any one of the two interfaces of the layer-like electrode that are parallel to the layer.

[0019] Preferably, the first electrode has a light transmittance of at least 50%, preferably at least 75%, at a wavelength of 500 nm, both in a region within one of the electrode elements and in a region of the conducting structure between the electrode elements.

[0020] Preferably, the surface resistance (i.e., a resistance normalized to a unit area) of the first electrode is greater in a region of the conductive structure between the electrode elements than in a region of one of the electrode elements. This ensures that, in the event of an overcurrent, the region of the conductive structure located between the electrode elements heats up faster than the region of the electrode element, thus ensuring melting and the effectiveness of the fuse. In the case of a layered first electrode, the aforementioned surface resistances can be specifically related to the layered area of ​​the first electrode.

[0021] According to a preferred embodiment, the surface resistance of the first electrode in the area of ​​the conducting structure is greater by at least a factor of 1.5, particularly preferably by at least a factor of 2 and most preferably by at least a factor of 5 than in the area of ​​one of the electrode elements.

[0022] For the device to function as a fusible link, it is also advantageous if the conductive structure has a lower melting point than the electrode elements. Accordingly, the melting point of the first electrode in the region of the conductive structure is preferably lower than in the region of one of the electrode elements, particularly preferably by at least 3 °C, or by at least 10 °C, or even by at least 20 °C.

[0023] For its function as a fusible link, it is further advantageous if the conductive structure can absorb less heat per unit area than the electrode elements. Accordingly, the area-normalized heat capacity of the first electrode is preferably lower in the region of the conductive structure than in the region of one of the electrode elements, particularly preferably by at least 10%, or by at least 30%, or even by at least 50%.

[0024] According to a preferred embodiment, the guide structure comprises nanoconducting elements with a diameter of less than 100 nm, preferably less than 50 nm, which act as the fusible link. The nanoconducting elements can also have a diameter greater than 5 µm and less than 100 µm, or a diameter greater than 5 µm and less than 50 µm. The guide structure can also consist of the nanoconducting elements described above.

[0025] Preferably, the nanoconducting elements are elongated nanoconducting elements which, for example, can have a length of at least five times, preferably ten times, their diameter.

[0026] The nanoconducting elements may include or consist of silver and / or gold and / or copper and / or indium tin oxide and / or carbon.

[0027] In particular, the aforementioned nanoconducting elements may be carbon nanotubes and / or nanowires made of gold, silver, or copper.

[0028] In particular, the conducting structure can include or consist of carbon nanotubes and / or nanowire lattices and / or nanowire networks, as described in A. Kumar, C. Zhou: The Race To Replace Tin-Doped Indium Oxide: Which Material Will Win?, ACS Nano 2010, Vol. 4, No. 1, pages 11-14. Nanowires, nanotubes, and nanorods suitable for the conducting structure are also discussed in C. Li, X. Yu: Silver nanowire-based transparent flexible, and conductive thin film., Nanoscale Research Letters 2011, 6:75. Furthermore, nanowires and nanotubes suitable for the conducting structure are also described in D. Hecht, L. Hu, G. Irvin: Emerging Transparent Electrodes Based on Thin Films of Carbon Nanotubes, Graphene, and Metallic Nanostructures., Advanced Materials 2011, 23, 1482-1513.

[0029] The nanoconducting elements described here can, for example, be embedded in a matrix material. This matrix material can be, for instance, radiolucent or transparent. Alternatively, the matrix material can be electrically insulating. The density of the nanoconducting elements within the matrix material can be configured such that, in the event of a short circuit, the nanoconducting elements, which provide the leads to the electrode elements (which, for example, form highly transparent conductive islands), rupture, thereby isolating the area. The electrode elements can be so small that, when the failure area is isolated, the resulting dark spots are not visible to the naked eye. Furthermore, the use of a transparent matrix material has the advantage of preventing the formation of non-luminescent areas.

[0030] According to a preferred embodiment, the electrode elements have or consist of a conductive layer. For example, each of the electrode elements can have or consist of a conductive layer. The conductive layer preferably comprises or consists of indium tin oxide.

[0031] Alternatively, the electrode elements can also have or consist of the previously described nanoconducting elements with a diameter of less than 100 nm, less than 50 nm, between 5 nm and 100 nm, or between 5 nm and 50 nm. However, these nanoconducting elements of the electrode elements are not designed as a fusible link, for example, because the surface resistance of the first electrode in a region of the conductive structure between the electrode elements is higher than in a region within one of the electrode elements, and / or the melting point of the first electrode in the region of the conductive structure is lower than in the region of one of the electrode elements, and / or the area-normalized heat capacity of the first electrode in the region of the conductive structure is lower than in the region of one of the electrode elements.

[0032] A lower surface resistance in the area of ​​the electrode elements can be achieved, for example, by using a nanoelement solution for the electrode elements that contains nanoelements which are on average shorter than the nanoelements of the nanoelement solution from which the guide structure is generated, so that the generated electrode elements have a higher nanoelement density, for example in the matrix material, than the guide structure.

[0033] Preferably, the electrode elements have an extent of less than 200 µm in each direction, preferably less than 100 µm and particularly preferably less than 50 µm.

[0034] According to a preferred embodiment, the electrode elements, when viewed in projection onto the layer surface of the first electrode, have an extent of less than 200 µm, preferably less than 100 µm and particularly preferably less than 50 µm in every direction.

[0035] Due to the previously described small dimensions of the electrode elements, it can be achieved that melting of the electrical connection produced via the guide structure of one or a few of the electrode elements is difficult or impossible to detect based on the luminous pattern of the optoelectronic device.

[0036] Preferably, the spacing between the electrode elements is less than 20 µm or less than 10 µm, and particularly preferably less than 5 µm. This reduces the voltage drop across the main surface of the first electrode if the resistance of the first electrode in a region of the conducting structure between the electrode elements is greater than in a region of one of the electrode elements.

[0037] According to a preferred embodiment, the second electrode comprises a plurality of second electrode elements arranged separately from one another, such that a second gap exists between them, and a second conductive structure configured to electrically connect adjacent second electrode elements, thereby forming a second fuse between the connected adjacent second electrode elements. The second conductive structure comprises a second conductive layer adjacent to the second electrode elements, which electrically connects adjacent second electrode elements and acts as the second fuse, and / or it extends into the second gap between the second electrode elements and electrically connects the adjacent second electrode elements via the second gap, thereby acting as the second fuse.

[0038] The second electrode can therefore be constructed identically to the first electrode. Furthermore, it can exhibit one or more of the preferred features of the first electrode described above, without being constructed identically to the first electrode.

[0039] According to one embodiment, a method for manufacturing the previously described optoelectronic device with a fusible link comprises the step of generating the layer-like first electrode. This step, in turn, comprises the sub-step of generating the plurality of electrode elements, which are arranged separately from one another, such that a gap exists between them, and the sub-step of generating the conductive structure, which is configured to electrically connect adjacent electrode elements and thereby form a fusible link between the connected adjacent electrode elements. As described above, the generated conductive structure comprises a conductive layer that adjoins the electrode elements and electrically connects adjacent electrode elements, thereby acting as the fusible link.

[0040] According to one embodiment, the method further comprises the steps of generating a functional layer structure and generating a second electrode, wherein the first and second electrodes and the functional layer structure are generated in such a way that the functional layer structure is suitable to emit electromagnetic radiation when the functional layer structure is energized by means of the first electrode and by means of the second electrode.

[0041] According to one embodiment, the step of generating the second electrode comprises the sub-steps of generating the plurality of second electrode elements, which are arranged separately from one another so that a second gap exists between them, and generating the second conductive structure, which electrically connects the adjacent second electrode elements to one another and thereby forms a second fusible link between the connected adjacent second electrode elements. As described, the second conductive structure has the second conductive layer and / or extends into the second gap between the second electrode elements and electrically connects the adjacent second electrode elements to one another via the second gap, thereby acting as the second fusible link.

[0042] Various embodiments of the solution according to the invention are explained in more detail below with reference to the drawings. The same reference numerals are used in all figures for similar or similarly acting elements or properties.

[0043] They show schematically: Fig. 1: a section of an optoelectronic device according to a first example, Fig. 2: a section of an optoelectronic device according to a second example, Fig. 3: a section of an optoelectronic device according to a third embodiment, Fig. 4: an optoelectronic device according to a fourth embodiment, Fig. 5: an optoelectronic device according to a fifth example, Fig. 6: an optoelectronic device according to a sixth embodiment, Fig. 7: Process steps in a method for manufacturing an optoelectronic device according to one of the first five embodiments / examples, Fig. 8: Process steps in a method for manufacturing an optoelectronic device according to the sixth embodiment.

[0044] The in the Fig. 1, Fig. 2 and Fig. The three illustrated sections of an optoelectronic device 1 according to the first three embodiments / examples all comprise a layer-like first electrode 20, a layer-like second electrode 30 and a functional layer structure 10, which is suitable for emitting electromagnetic radiation when the functional layer structure 10 is energized by means of the first and second electrodes 20, 30 with a suitable current or voltage.

[0045] In these embodiments / examples, the first electrode 20 has a plurality of electrode elements 21 that are arranged separately from one another, so that there is a space between them, as well as a guide structure 22 that electrically connects adjacent electrode elements 21 to each other and acts as a fuse in this connection.

[0046] In the first example according to Fig. 1 the conducting structure 22 extends only in the space between the electrode elements 21 and connects adjacent electrode elements electrically via the space and acts as a fuse in this connection.

[0047] In the second example according to Fig. 2 the conducting structure 22 consists of a conducting structure layer 22a which is adjacent to the electrode elements 21 and electrically connects adjacent electrode elements 21 to each other and thereby acts as a fuse.

[0048] In the third embodiment according to Fig. 3. The conductive structure 22 extends into the space between the electrode elements 21 and electrically connects adjacent electrode elements 21 via this space. It also has a conductive layer 22a that adjoins the electrode elements 21 and electrically connects adjacent electrode elements 21. Both connections described above are designed as a fusible link between the electrode elements 21, so that in the event of an overcurrent, these two connections are separated by melting of the conductive structure 22.

[0049] The in Fig. The optoelectronic device 1 shown in Figure 4, according to a fourth embodiment, also has a first electrode 20, a second electrode 30, and a functional layer structure 10. The functional layer structure 10 is suitable for emitting electromagnetic radiation through the first electrode 20 when the functional layer structure 10 is energized by means of the electrodes 20, 30 with a suitable current or voltage.

[0050] The first electrode 20 in turn has a plurality of electrode elements 21 as well as a conducting structure 22 which extends in the space between the electrode elements 21 and electrically connects adjacent electrode elements 21 via the space and also has a conducting structure layer 22a which adjoins the electrode elements 21 and electrically connects adjacent electrode elements 21.

[0051] In the optoelectronic device 1 of Fig. Figure 4 is an organic light-emitting diode (OLED). During operation of the OLED, the light generated by the functional layer structure 10 is emitted through the first electrode 20 and the glass substrate 54. On the side of the glass substrate 54 opposite the electrode 20, an output coupling film 55 is arranged, which improves the light output.

[0052] The first electrode 20 has a light transmittance of at least 75% at a wavelength of 500 nm, both within a region of one of the electrode elements 21 and in a region between the electrode elements 21. In the present embodiment, this is achieved by the conductor structure being composed of nanoconducting elements, such as carbon nanotubes and / or gold or silver nanowires, which predominantly have a diameter of less than 100 nm. The conductor structure has a sufficiently thin layer to provide the necessary light transmittance. The electrode elements 21, in turn, are made of indium tin oxide (abbreviation: ITO) and are sufficiently thin to provide the necessary light transmittance.

[0053] Alternatively, both the guide structure 22 and the electrode elements 21 could consist of such nanoconducting elements, with only the nanoconducting elements of the guide structure 22 located between the electrodes being designed as a fusible link.

[0054] To ensure that the conductive structure 22, and not the electrode elements 21, acts as a fusible link, the surface resistance of the first electrode in a region of the conductive structure 22 between the electrode elements 21 is greater than in a region of one of the electrode elements 21. Additionally, the melting point of the conductive structure 22 could be lower than that of one of the electrode elements 21, and / or the area-normalized heat capacity of the first electrode 20 in the region of the conductive structure 22 could be lower than in the region of one of the electrode elements 21. To minimize the voltage drop across the electrode surface caused by the increased surface resistance, the electrode elements 21 are spaced less than 5 µm apart.

[0055] The second electrode 30, on the other hand, comprises a planar electrode layer whose structure remains essentially the same over the entire surface.

[0056] The OLED also features insulator structures 40 that prevent a short circuit between the two electrodes 20, 30, as well as terminals 25, 35 for connecting the electrodes 20, 30 to a power source. The electrodes 20, 30 and the functional layer structure are encapsulated by a thin-film coating 51 and protected from environmental influences. A further glass plate 53 is bonded to the thin-film coating 51 using an adhesive 52, providing additional protection for the OLED against damage.

[0057] The guide structure 22 is present in the embodiment of Fig. 4. The functional layer structure 10 is in full contact with the functional layer structure 10 over its entire surface, allowing it to be uniformly energized, thus achieving a relatively homogeneous luminous pattern. In this case, the functional layer structure 10 can therefore be energized by the two electrodes in such a way that the current density at a position of the functional layer structure 10 located within one of the electrode elements 21 (as viewed in projection onto a layer surface of the first electrode 20) differs by less than 5% from the current density at a position of the functional layer structure 10 located in the space midway between two interfaces of the electrode elements 21 (as viewed in projection onto the layer surface of the first electrode 20).

[0058] If, according to the fourth embodiment, a local short circuit occurs between the two electrodes 20, 30 of the OLED, for example due to particles introduced during production, then during operation of the OLED the affected electrode elements 21 of the first electrode 20 are disconnected from the current supply by the conductive structure 22, which acts as a fuse. This prevents damage to areas of the OLED that are not affected by the short circuit.

[0059] In order to prevent the electrode elements 21, which are disconnected from the power supply, from excessively affecting the light pattern of the OLED, the electrode elements 21 have an extent of less than 50 µm in every direction.

[0060] The in Fig. The fifth example shown in Figure 5 is identical to the fourth embodiment except that the guide structure 22 extends only in the space between the electrode elements 21 and electrically connects adjacent electrode elements 21 via the space, but does not have the previously described guide structure layer 22a, which borders the electrode elements 21 and electrically connects adjacent electrode elements 21.

[0061] Both the electrode elements 21 and the guide structure 22 are in direct contact with the functional layer structure 10, so that during operation the latter is energized by both the electrode elements 21 and the guide structure 22, thus achieving a relatively homogeneous luminescence pattern. In this case, the functional layer structure 10 can be energized by the two electrodes in such a way that the current density at a position of the functional layer structure located within one of the electrode elements (as viewed from a projection onto a surface of the first electrode) differs by less than 20% from the current density at a position of the functional layer structure located in the space midway between two interfaces of the electrode elements (as viewed from a projection onto the surface of the first electrode).

[0062] The in Fig. The optoelectronic device 1 shown in Figure 6, according to the sixth embodiment, is identical in construction to that shown in the fourth embodiment, with the sole difference being that in this optoelectronic device 1, Fig. 6. The second electrode 30 is constructed identically to the first electrode 20, i.e., it also has a conductive structure 32 and electrode elements 31. Accordingly, in the present embodiment, both the conductive structure 22 of the first electrode 20 and the conductive structure 32 of the second electrode 30 act as fuses.

[0063] The in Fig. The seven illustrated process steps of the method for manufacturing the previously described optoelectronic device according to one of the embodiments / examples 1 to 5 comprise the steps of generating S1 of the first electrode 20, generating S2 of the functional layer structure 10, and generating S3 of the second electrode 30. The step of generating S1 of the first electrode 20 in turn comprises the sub-step S1a of generating the plurality of electrode elements 21 and the sub-step S1b of generating the guide structure 22.

[0064] For example, to generate the electrode elements 21 of the first electrode 20 of the optoelectronic device 1 according to one of embodiments 3 or 4, a structured indium tin oxide layer can first be deposited onto a substrate, e.g., the glass substrate 54, by means of chemical vapor deposition (CVD) using a suitable shadow mask. A solution containing nanowires is then applied to the electrode elements 21 thus generated, so that after evaporation of the solution, a guide structure 22 consisting of nanoconducting elements remains between and on the electrode elements 21 (step S1b). After this generation of the first electrode 20, the functional layer structure 10 and the second electrode 30 are deposited by means of CVD (steps S2 and S3), as is also the case with conventional OLEDs.

[0065] Alternatively, a full-surface electrode could initially be deposited onto a substrate, followed by a full-surface functional layer structure. On the latter, a structured indium tin oxide layer (electrode elements) is then produced using CVD with a suitable shadow mask. A solution containing nanowires is then applied to this layer, so that after evaporation of the solution, a conductive structure consisting of nanowires remains between and on the electrode elements.

[0066] The in Fig. The eight process steps of the method for manufacturing the previously described optoelectronic device 1 according to the sixth embodiment also include the steps of generating S1 of the first electrode 20, generating S2 of the functional layer structure 10, and generating S3 of the second electrode 30. The step of generating S1 of the first electrode 20, in turn, comprises substep S1a of generating the plurality of electrode elements 21 and substep S1b of generating the guide structure 22. Similarly, the step of generating S3 of the second electrode 30 comprises substep S3a of generating the plurality of electrode elements 31 and substep S3b of generating the guide structure 32.

[0067] For example, the electrode elements 21 of the first electrode 20 can be produced by CVD using a suitable shadow mask made of indium tin oxide (ITO) (step S1a). A solution containing nanowires is then applied to these electrode elements 21, so that after evaporation of the solution, a guide structure 22 made of nanowires remains between and on the electrode elements 21 (step S1b). After this production of the first electrode, the functional layer structure 10 is deposited (step S2).On this, the electrode elements 31 are then produced analogously to the electrode elements 21 by means of CVD using a suitable shadow mask made of indium tin oxide (ITO) (step S3a) and a solution with nanowires is then applied to these electrode elements 31, so that after evaporation of the solution between and on the electrode elements 31 a further guide structure 32 made of nanowires remains (step S3b).

[0068] As described at the beginning, both the electrode elements 21 and / or 31 and the guide structure(s) 22 and / or 32 can consist of nanoelements, in particular nanowires. The electrode elements 21 and / or 31 are produced, for example, by applying a layer of nanoelements over the entire surface – which can be achieved, for example, by drying a solution of nanoelements over the entire surface – and subsequently removing the applied nanoelement layer locally by laser ablation. The guide structure 22 and / or 32 is then produced, as described above, by applying and drying another solution of nanoelements. A lower surface resistance in the area of ​​the electrode elements 21 and / or 31 can be achieved, for example, by using a nanowire.This can be achieved by using a nanoelement solution for the electrode elements that contains nanoelements which are on average shorter than the nanoelements of the nanoelement solution from which the guide structure is generated, so that the generated electrode elements have a higher nanoelement density than the guide structure.

[0069] To generate the effects associated with the Fig. 1 and Fig. In the 5 exemplary optoelectronic devices described, in which the conduction structure extends only between the electrodes, it is possible, for example, to apply the nanowire solution to the electrode elements in such a way that the conduction structure 22 and / or 32 formed from nanoelements after drying of the nanowire solution extends only between the electrode elements 21 and / or 31.

[0070] Similarly, the previously mentioned issues can also be addressed in connection with the Fig. 7 and Fig.In the manufacturing process described in section 8, both the electrode elements 21 and / or 31 and the conductive structure 22 and / or 32 can be produced as a coating. For example, a thinner ITO layer can be applied over the entire surface, forming the conductive layer of the conductive structure, and then the electrode elements can be produced as an ITO layer structured by means of a shadow mask. This allows, in particular, the creation of the first electrode 20 according to the second example, in which the conductive structure consists only of the conductive layer 21a, but does not extend into the spaces between the electrode elements 21.

Claims

[1] Optoelectronic device (1) comprising a first electrode (20), wherein the first electrode (20) has a plurality of electrode elements (21) which are arranged separately from each other, so that there is a space between them, wherein the first electrode (20) also has a conducting structure (22) which is designed in such a way that it electrically connects adjacent electrode elements (21) to each other and thereby forms a fusible link between the connected adjacent electrode elements (21), wherein the conducting structure (22) comprises a conducting structure layer (22a) which adjoins the electrode elements (21) and electrically connects the adjacent electrode elements (21) to each other, thereby acting as the fuse, and wherein - the device further comprises a functional layer structure (10) which is suitable for emitting electromagnetic radiation when the functional layer structure (10) is energized, wherein - the guide structure (22) is set up to supply current to the functional layer structure, and the functional layer structure (10) covers the guide structure (22) on its side facing away from a support, and - the guiding structure (22) is in full contact with the functional layer structure (10). [2] Optoelectronic device (1) according to claim 1, wherein the guide structure (22) extends in the space between the electrode elements (21) and electrically connects the adjacent electrode elements (21) via the space and acts as the fuse. [3] Optoelectronic device (1) according to claim 1 or 2, further comprising: - a second electrode (30), wherein the functional layer structure (10) is suitable to emit electromagnetic radiation when the functional layer structure (10) is energized by means of the first and the second electrode (20, 30). [4] Optoelectronic device (1) according to any one of claims 1 to 3, wherein the second electrode (30) has a plurality of second electrode elements (31) which are arranged separately from each other, so that a second space is located between them, wherein the second electrode (30) also has a second conducting structure (32) which is designed in such a way that it electrically connects adjacent second electrode elements (31) to each other and thereby forms a second fusible link between the connected adjacent second electrode elements (31), wherein the second conducting structure (32) comprises a second conducting structure layer (32a) which adjoins the second electrode elements (31) and electrically connects the adjacent second electrode elements (31) to each other and thereby acts as the second fuse, and / or the second conducting structure (32) extends into the second space between the second electrode elements (31) and electrically connects the adjacent second electrode elements (31) to each other via the second space and thereby acts as the second fuse. [5] Optoelectronic device (1) according to one of claims 1 to 4, wherein the first electrode (20) is designed as a layer and the first electrode and the second electrode (30) are designed and arranged relative to the functional layer structure (10) such that the functional layer structure (10) can be energized by means of the first and the second electrode (20, 30) such that a current density at a position of the functional layer structure (10) located within one of the electrode elements (21) as viewed in projection onto a layer surface of the layer-like first electrode (20) differs from a current density at a position of the functional layer structure (10) located in the space midway between two interfaces of the electrode elements (21) as viewed in projection onto the layer surface of the first electrode (20) by less than 50%, preferably less than 20% and particularly preferably less than 5%. [6] Optoelectronic device (1) according to one of the preceding claims, wherein the guide structure (22) is designed and arranged relative to the functional layer structure (10) such that the functional layer structure (10) can be energized by means of the guide structure (22). [7] Optoelectronic device (1) according to one of the preceding claims, wherein the first electrode (20) has a light transmittance of at least 50%, preferably at least 75%, at a wavelength of 500 nm both in a region within one of the electrode elements (21) and in a region of the guide structure (22) between the electrode elements (21). [8] Optoelectronic device (1) according to any one of the preceding claims, wherein a surface resistance of the first electrode (20) in a region of the conducting structure (22) between the electrode elements (21) is greater than in a region within one of the electrode elements (21) and / or a melting point of the first electrode (20) in the area of ​​the conducting structure (22) is lower than in the area within one of the electrode elements (21) and / or an area-normalized heat capacity of the first electrode (20) in the area of ​​the guide structure (22) is smaller than in the area within one of the electrode elements (21) . [9] Optoelectronic device (1) according to one of the preceding claims, wherein the guide structure (22) comprises nanoconducting elements with a diameter of less than 100 nm, preferably less than 50 nm, which act as the fuse. [10] Optoelectronic device (1) according to one of the preceding claims, wherein the electrode elements (21) have a conductive layer which preferably comprises indium tin oxide. [11] Optoelectronic device (1) according to one of the preceding claims, wherein the electrode elements (21) have a dimension of less than 200 µm, preferably less than 100 µm and particularly preferably less than 50 µm, in each direction.

Images