SEMICONDUCTOR COMPONENT

Abstract

Semiconductor component (A7) with: a switching element (4) having a first electrode (41), a second electrode (42) and a third electrode (43) and configured to provide ON / OFF control between the first electrode (41) and the third electrode (43) by means of a control voltage applied across the second electrode (42) and the third electrode (43) while a potential difference is applied between the first electrode (41) and the third electrode (43); a substrate (1) having a front surface (11) and a back surface (12) and made of an insulating material; a front electrically conductive layer (2) formed on the front surface (11) of the substrate (1) and containing a first electrode part (21) to which the first electrode (41) of the switching element (4) is bonded; a first terminal (51) which is electrically connected to the first electrode (41) via the first electrode part (21); a second terminal (52) which is electrically connected to the second electrode (42); a third terminal (53) which is electrically connected to the third electrode (43); and a sealing resin (7) covering at least part of the front electrically conductive layer (2), part of each terminal of the first to third terminals (51, 52, 53) and the switching element (4), wherein the first to third terminals (51, 52, 53) project from the sealing resin (7) in a direction towards the same side, along a first direction (y) which is perpendicular to a thickness direction (z) of the substrate, wherein the first to third terminals (51, 52, 53) are spaced apart from each other in a second direction (x) that is perpendicular to the thickness direction (z) and to the first direction (y), wherein of the first to third terminals (51, 52, 53) the first terminal (51) is arranged on an outermost side in the second direction (x), wherein the sealing resin (7) has an end surface (73) that is perpendicular to the first direction (y), wherein the first terminal (51) and the third terminal (53) are arranged adjacent to each other in the second direction (x) at the end face (73), wherein the first terminal (51) on the end face (73) has a position in the thickness direction (z) that differs from those of the second and third terminals (52, 53), wherein the sealing resin (7) comprises: - a base-side part (7a) that is arranged in the second direction (x) between the first terminal (51) and the third terminal (53) and that is offset in the first direction (y) to a switching element side of the first terminal (51) and the third terminal (53); and - a pointed part (7b) that is offset in the first direction (y) towards a pointed side of the first (51) and third terminal (53) that is exposed opposite the sealing resin (7), wherein the front electrically conductive layer (2) has an insulated part (25) which is spaced apart and insulated from the first electrode part (21), wherein the sealing resin (7) has a side surface (74) perpendicular to the second direction (x) and is formed with a first recess (78) which is set back from the side surface (74) at least in the second direction (x), and wherein the insulated part (25) is partially exposed to the sealing resin (7) through the first recess (78).

Description

TECHNICAL AREA

[0001] The present disclosure relates to a semiconductor component. STATE OF THE ART

[0002] A switching component used in an electronic circuit, such as an inverter or converter circuit, contains a switching element. Common examples of such switching elements are silicon (Si) and silicon carbide (SiC) switching elements. Examples of SiC switching elements include a SiC MOSFET (metal-oxide-semiconductor field-effect transistor), a SiC bipolar transistor, a SiC JFET (junction field-effect transistor), a SiC IGBT (insulated-gate bipolar transistor), and so on.

[0003] The JP H08-97333A exposes a generic semiconductor device encapsulated in a sealing resin, isolating it from the environment. Several terminals protrude from the sealing resin for external electrical contact with the semiconductor device. To improve tracking resistance between the terminals, recesses and protrusions are provided in the sealing resin, extending between the terminals.

[0004] JP 2009-278134A discloses a semiconductor power module and an inverter with improved reliability and reduced thermal stress. The power module is encapsulated in a sealing resin, isolating it from the environment, and comprises active elements that are soldered on one side to an electrode formed on the surface of a ceramic substrate. A conductive film is formed on the other surface of the ceramic substrate, and its outer edges are surrounded by the sealing resin.

[0005] DE 10 2015 104 990 A1 describes a device comprising a compound semiconductor chip with a control electrode, a first load electrode, and a second load electrode. A first electrical connector is electrically coupled to the control electrode, a second electrical connector is electrically coupled to the first load electrode, and a third electrical connector is electrically coupled to the first load electrode. The third electrical connector is configured to provide a sampling signal from the first load electrode, wherein the sampling signal is based on a physical parameter of the compound semiconductor chip, and wherein the control electrode is configured to receive a control signal based on the sampling signal. A fourth electrical connector is electrically coupled to the second load electrode.

[0006] Another semiconductor component is known from document US 2004 / 0 113 248 A1. OVERVIEW OF THE INVENTION

[0007] One object of the present disclosure is to provide an improved semiconductor device. In particular, but without limitation, it is an object to provide a semiconductor device capable of improving the withstand voltage and the response speed.

[0008] The above problem is solved by a semiconductor component having the features of claim 1. The above problem is further solved by a semiconductor component having the features of claim 18. The above problem is further solved by a semiconductor component having the features of claim 24.

[0009] Preferred embodiments are defined in the respective subclaims.

[0010] Further features and advantages of the present disclosure will become apparent from the detailed description below with reference to the attached drawing. BRIEF DESCRIPTION OF THE DRAWING Fig. Figure 1 is a perspective view of a semiconductor component according to a first example of the present disclosure; Fig. Figure 2 is a perspective view showing main parts of the semiconductor device according to the first example of the present disclosure; Fig. 3 is a top view of the semiconductor component according to the first example of the present disclosure; Fig. Figure 4 is a top view showing the main parts of the semiconductor device according to the first example of the present disclosure; Fig. 5 is a view of the semiconductor component according to the first example of the present disclosure from below; Fig. 6 is a right-hand view of the semiconductor device according to the first example of the present disclosure; Fig. 7 is a right-hand view showing the main parts of the semiconductor device according to the first example of the present disclosure; Fig. Figure 8 is a front view of the semiconductor component according to the first example of the present disclosure; Fig. Figure 9 is a schematic sectional view along line IX-IX in Fig. 4; Fig. Figure 10 is a sectional view along line XX in Fig. 4; Fig. 11 is a top view of a semiconductor component according to a second example of the present disclosure; Fig. 12 is a top view of a semiconductor component according to a third example of the present disclosure; Fig. 13 is a top view of a semiconductor component according to a fourth example of the present disclosure; Fig. 14 is a top view of a semiconductor component according to a fifth example of the present disclosure; Fig. Figure 15 is a top view of a semiconductor component according to a sixth example of the present disclosure; Fig. Figure 16 is a front view of a semiconductor component according to an embodiment of the present disclosure; Fig. Figure 17 is a top view showing main parts of a semiconductor device according to an eighth example of the present disclosure; Fig. Figure 18 is a top view showing main parts of a semiconductor device according to a ninth example of the present disclosure; Fig. Figure 19 is a top view showing main parts of a semiconductor device according to a tenth example of the present disclosure; and Fig. Figure 20 is a top view showing main parts of a semiconductor component according to an eleventh embodiment of the present disclosure. MODE FOR EXECUTING THE INVENTION

[0011] Preferred embodiments of the present disclosure are described below with reference to the accompanying drawing. <Erstes Beispiel Ausführungsform>

[0012] The Fig. Figures 1-10 show a semiconductor device according to a first example of the present disclosure. The semiconductor device A1 comprises a substrate 1, a front electrically conductive layer 2, a rear electrically conductive layer 3, a switching element 4, a drain terminal 51, a gate terminal 52, a source terminal 53, a source sensing terminal 54, a gate wire 62, a plurality of source wires 63, a source sensing wire 64, and a sealing resin 7.

[0013] Fig. Figure 1 is a perspective view of the semiconductor component A1. Fig. Figure 2 is a perspective view showing the main parts of the semiconductor component A1. Fig. Figure 3 is a top view of the semiconductor component A1. Fig. Figure 4 is a top view showing the main parts of the semiconductor component A1. Fig. Figure 5 is a view of the semiconductor component A1 from below. Fig. Figure 6 is a right-hand view of the semiconductor component A1. Fig. Figure 7 is a right-hand view showing the main parts of the semiconductor component A1. Fig. Figure 8 is a front view of the semiconductor component A1. Fig. Figure 9 is a schematic sectional view along line IX-IX in Fig. 4. Fig. Figure 10 is a sectional view along line XX in Fig. 4. For better understanding, the sealing resin 7 is in Fig. 2 represented by imaginary lines, and a representation of the sealing resin 7 is shown in the Fig. 2 and Fig. Figure 7 omitted. In the figures, the z-direction is an example of the thickness direction, the y-direction is an example of the first direction, and the x-direction is an example of the second direction.

[0014] Substrate 1 is a plate-like element made of an insulating material and supports the switching element 4. As shown in Fig. As shown in Figure 4, the substrate 1 is rectangular when viewed in the z-direction in the present embodiment. Examples of materials for the substrate 1 include, but are not limited to, ceramics such as aluminum oxide, aluminum nitride, silicon nitride, boron nitride, and graphite. The substrate 1 has a front surface 11 and a back surface 12. The front surface 11 and the back surface 12 are flat surfaces that point in the z-direction in opposite directions.

[0015] The front electrically conductive layer 2 is formed on the front surface 11 of the substrate 1 and primarily serves to provide a conduction path for the switching element 4. The material for the front electrically conductive layer 2 is not particularly restricted. The front electrically conductive layer can be made of a metal, such as copper or its alloys, and can be provided with a nickel or silver plating layer, as required. The method for forming the front electrically conductive layer 2 is not restricted. For example, the front electrically conductive layer can be formed by bonding a metal plate to the front surface 11 of the substrate 1.

[0016] In the present embodiment, the front electrically conductive layer 2 includes a drain electrode part 21, a source electrode part 23 and a plurality of insulated parts 25.

[0017] The drain electrode part 21, which is an example of the first electrode part, is a section to which the switching element 4 is mounted and the drain terminal 51 is bonded. In the present embodiment, the drain electrode part 21 has an area that comprises more than half the area of ​​the front electrically conductive layer 2. More precisely, the drain electrode part 21 has a section that almost completely covers an upper section of the substrate 1 in the y-direction in the figures, and another section that covers a right end (in the x-direction) of a lower section of the substrate 1 in the y-direction in the figures. In the present embodiment, the drain electrode part 21 has two cutouts 215.The two cutouts 215 are formed in the x-direction on opposite sides of the drain electrode part 21 and are set back in the x-direction from the edges of the drain electrode part 21.

[0018] The source electrode part 23, which is an example of the third electrode part, is a section electrically connected to a source electrode 43 of the switching element 4, which will be described later, and to which the source terminal 53 is bonded. The source electrode part 23 is spaced apart from the drain electrode part 21. In the x-direction, the source electrode part 23 is located close to a lower section of the drain electrode part 21 in the y-direction in the figures, and in the present embodiment, it is generally rectangular when viewed in the z-direction.

[0019] The plurality of insulated parts 25 are spaced apart from the drain electrode part 21 and the source electrode part 23 and are insulated from the drain electrode part 21, the source electrode part 23, and the switching element 4. That is, the plurality of insulated parts 25 do not form the conduction path to the switching element 4. Two insulated parts 25 are provided in the present embodiment, although this is merely an example, and the number of insulated parts 25 can be varied. The two insulated parts 25 are each arranged within one of the two cutouts 215 of the drain electrode part 21.

[0020] As it is in the Fig. 5, Fig. 7 and Fig. As shown in Figure 9, the electrically conductive layer 3 on the back side is formed on the back surface 12 of the substrate 1. The electrically conductive layer 3 on the back side is insulated from the drain electrode portion 21 and the switching element 4. In the present embodiment, the electrically conductive layer 3 on the back side has a size and shape such that it covers the majority of the back surface 12 of the substrate 1. That is, when viewed in the z-direction, the electrically conductive layer 3 on the back side overlaps almost the entire drain electrode portion 21 and the switching element 4.

[0021] The switching element 4 is fabricated using Si or SiC as the base material and implements the switching function of the semiconductor device A1. Examples of the switching element 4 include a SiC MOSFET (metal oxide semiconductor field-effect transistor), a SiC bipolar transistor, a SiC JFET (junction field-effect transistor), a SiC IGBT (bipolar transistor with insulated gate), etc. In the present embodiment, a case is described in which the switching element 4 is a SiC MOSFET, which is best suited to achieve an improved standby voltage and response speed.

[0022] As it is in the Fig. 2, Fig. 4, Fig. 9 and Fig. As shown in Figure 10, the switching element 4 has a drain electrode 41 formed on a back side of the chip, as well as a gate electrode 42 and a source electrode 43 formed on a front side of the chip. The drain electrode 41 is an example of the first electrode. The drain electrode 41 is formed on a surface of the switching element 4 that faces the drain electrode portion 21. The gate electrode 42, which is an example of the second electrode, is formed on a surface of the switching element 4 that is opposite the surface on which the drain electrode 41 is formed. The source electrode 43, which is an example of the third electrode, is formed on the surface of the switching element 4 on which the gate electrode 42 is formed. The source electrode 43 is considerably larger than the gate electrode 42 and covers the majority of one surface of the switching element 4.The front surface of the semiconductor substrate below the source electrode 43 is formed with a number of SiC MOSFETs having a trench structure, and the source electrodes and the gate electrodes of the respective transistors are connected in parallel to the source electrode 43 and the gate electrode 42, respectively.

[0023] In the switching element 4, an ON / OFF control is carried out between the drain electrode 41 and the source electrode 43 by applying a control voltage via the gate electrode 42 and the source electrode 43, while a potential difference is applied between the drain electrode 41 and the source electrode 43.

[0024] The switching element 4 is mounted on the substrate 1 by bonding the drain electrode 41 of the switching element 4 to the drain electrode part 21 of the front electrically conductive layer 2 using a bonding material 49. To electrically connect the drain electrode 41 of the switching element 4 and the drain electrode part 21 of the front electrically conductive layer 2, the bonding material 49 is an electrically conductive bonding material formed using a TiNiAg-based solder, a SnAgCu-based solder, or baked silver, to name examples.

[0025] In the present embodiment, the switching element 4 has a rectangular shape with four outer edges 45. The switching element 4 of the present embodiment is arranged such that two of the outer edges 45 extend along the x-direction, and such that the other two outer edges 45 extend along the y-direction.

[0026] The drain terminal 51, the gate terminal 52, the source terminal 53, and the source-sensing terminal 54 each provide a conduction path connecting the outside of the semiconductor device A1 and the switching element 4. This path is used, for example, when the semiconductor device A1 is mounted on a printed circuit board (not shown). The drain terminal 51, the gate terminal 52, the source terminal 53, and the source-sensing terminal 54 are, for example, made of a metal such as copper and can be formed by cutting a metallic terminal frame.

[0027] The drain terminal 51, which is an example of the first terminal, is electrically connected to the drain electrode 41 of the switching element 4 via the drain electrode part 21. As shown in the Fig. As shown in Figures 1-4 and 7, the drain terminal 51 extends along the y-direction and includes a bonding part 511, a curved part 512, and a tip 513. The bonding part 511 is bonded to the drain electrode part 21 and forms a base part of the drain terminal 51. The method for bonding the bonding part 511 and the drain electrode part 21 is not particularly restricted, and various methods such as bonding using an electrically conductive bonding material, ultrasonic bonding, or resistance welding can be used as appropriate. In the present embodiment, an electrically conductive bonding material is used.The curved section 512 is a segment with a bent shape that is connected to the bonding section 511 and is shaped such that the section between the curved section 512 and the tip 513 is offset in the z-direction relative to the rear electrically conductive layer 3. The tip 513 represents the end of the drain terminal 51, which is located on the opposite side from the bonding section 511. When viewed in the z-direction, the drain terminal 51 is located at the outermost side (right side in the figures) in the x-direction.

[0028] The source terminal 53, which is an example of the third terminal, is electrically connected to the source electrode 43 of the switching element 4 via the source electrode part 23. As shown in the Fig. As shown in Figures 1-4, the source terminal 53 extends along the y-direction and includes a bonding part 531, a curved part 532, and a tip 533. The bonding part 531 is bonded to the source electrode part 23 and forms a root part of the source terminal 53. The method for bonding the bonding part 531 and the source electrode part 23 is not particularly restricted, and various methods can be used, such as bonding using an electrically conductive bonding material, ultrasonic bonding, or resistance welding, depending on suitability. In the present embodiment, an electrically conductive bonding material is used.The curved section 532 is a segment with a bent shape that is connected to the bond section 531 and is shaped such that the section between the curved section 532 and the tip 533 is offset in the z-direction relative to the rear electrically conductive layer 3. The tip 533 is the end of the source terminal 53, which is located on the side opposite the bond section 531. When viewed in the z-direction, the source terminal 53 is adjacent to the drain terminal 51 in the x-direction.

[0029] The gate terminal 52, which is an example of the second terminal, is electrically connected to the gate electrode 42 of the switching element 4. As shown in the Fig. As shown in Figures 1-4, the gate terminal 52 extends along the y-direction and includes a bonding part 521, a curved part 522, and a tip 523. The bonding part 521 is bonded to the front surface 11 of the substrate 1 and forms a base part of the gate terminal 52. The method for bonding the bonding part 521 to the front surface 11 of the substrate 1 is not particularly restricted, and bonding using various types of electrically conductive bonding material can be employed appropriately. The curved part 522 is a section with a bent shape that is connected to the bonding part 521 and is shaped such that the section between the curved part 522 and the tip 523 is offset in the z-direction relative to the rear electrically conductive layer 3. Point 523 is the end of Gate Terminal 52, which is located on the side opposite Bond Part 521.The gate terminal 52 is located in the x-direction with respect to the source terminal 53 on the side opposite the drain terminal 51 when viewed in the z-direction.

[0030] The source detection terminal 54, which is an example of the fourth terminal, is electrically connected to the source electrode 43 of the switching element 4. As shown in the Fig. As shown in Figures 1-4, the source-sensing terminal 54 extends along the y-direction and includes a bond part 541, a curved part 542, and a tip 543. The bond part 541 is bonded to the front surface 11 of the substrate 1 and forms a base part of the source-sensing terminal 54. The method for bonding the bond part 541 to the front surface 11 of the substrate 1 is not particularly restricted, and bonding using various types of electrically conductive bonding material can be employed appropriately. The curved part 542 is a section with a bent shape that is connected to the bond part 541 and is shaped such that the section between the curved part 542 and the tip 543 is offset in the z-direction relative to the rear electrically conductive layer 3.Tip 543 is the end of the source sensing terminal 54, which is located on the side opposite the bond part 541. The source sensing terminal 54 is located in the x-direction with respect to the source terminal 53 on the side opposite the drain terminal 51 when viewed in the z-direction, and in the illustrated example, it is positioned in the x-direction between the gate terminal 52 and the source terminal 53. It should be noted that the gate wire 62 and the source sensing wire 64 can be interchanged. That is, the arrangement of the gate terminal 52 and the source sensing terminal 54 in the x-direction is not restricted to the arrangement shown in the figures, and the positions of the gate terminal 52 and the source sensing terminal 54 can be reversed compared to the arrangement shown. The same applies to the other embodiments described below.Furthermore, the gate terminal 52, the source terminal 53, and the source sensing terminal 54 do not necessarily have to include the bent parts 522, 532, and 542. In particular, if each of the gate terminal 52, the source terminal 53, and the source sensing terminal 54 has a flat shape without a bent part, they can be arranged at a position offset in the z-direction from the rear electrically conductive layer 3, and the gate wire 62, the source wires 63, and the source sensing wire 64 can each be bonded to such a gate terminal 52, source terminal 53, and source sensing terminal 54, respectively. Such an arrangement reduces manufacturing costs, whereas the distance between the rear electrically conductive layer 3 and the gate terminal 52, the source terminal 53 or the source sensing terminal 54 is increased.

[0031] As it is in Fig. As shown in Figure 4, the distance d13 in the x-direction between the center line C1 of the drain terminal 51 and the center line C3 of the source terminal 53 is greater than the distance d34 between the center line C3 of the source terminal 53 and the center line C4 of the source acquisition terminal 54. Likewise, the distance d13 is greater than the distance d24 between the center line C2 of the gate terminal 52 and the center line C4 of the source acquisition terminal 54. In the present embodiment, the distances d24 and d34 are approximately equal.

[0032] As it is in Fig. As shown in Figure 8, in the present embodiment the tip 513 of the drain terminal 51, the tip 523 of the gate terminal 52, the tip 533 of the source terminal 53, and the tip 543 of the source detection terminal are in almost the same position in the z-direction. Furthermore, the drain terminal 51, the gate terminal 52, the source terminal 53, and the source detection terminal 54 protrude from the sealing resin 7 in almost the same position in the z-direction.

[0033] As it is in Fig. As shown in Figure 4, the phantom line, as an extension of the center line C3 of the source terminal 53 in the y-direction, intersects the switching element 4. The phantom line, as an extension of the center line C1 of the drain terminal 51 in the y-direction, does not intersect the switching element 4.

[0034] As it is in the Fig. 2 and Fig. As shown in Figure 4, the gate wire 62 is bonded to the gate electrode 42 of the switching element 4 and the bond part 521 of the gate terminal 52 to electrically connect the gate electrode 42 of the switching element 4 and the gate terminal 52. The material for the gate wire 62 is not particularly restricted, although in the present embodiment a wire made of Al-Ni is used. In the present embodiment, the gate electrode 42 and the gate terminal 52 are electrically connected to each other by a single gate wire 62. When viewed in the z-direction, the gate wire 62 is oriented obliquely with respect to both the x-direction and the y-direction.

[0035] As it is in the Fig. 2, Fig. 4, Fig. 7 and Fig. As shown in Figure 8, each of the source wires 63 is bonded to the source electrode 43 of the switching element 4 and the source electrode portion 23 of the front electrically conductive layer 2 to electrically connect the source electrode 43 of the switching element 4 to the source electrode portion 23 and the source terminal 53. The material for the source wires 63 is not particularly restricted, although in the present embodiment wires made of aluminum are used. The wire diameter of the source wires 63 is larger than that of the gate wire 62 and the source sensing wire 64. In the present embodiment, the source wires 63 extend along the y-direction and are spaced apart from each other in the x-direction. In the present embodiment, four source wires 63 are provided.

[0036] As it is in the Fig. 2 and Fig. As shown in Figure 4, the source sensing wire 64 is bonded to the source electrode 43 of the switching element 4 and the bonding part 541 of the source sensing terminal 54 to electrically connect the source electrode 43 of the switching element 4 and the source sensing terminal 54. The material for the source sensing wire 64 is not particularly restricted. In the present embodiment, a plurality of wires made of Al-Ni, which are thicker than the wire used to connect the gate electrode, can be used. In the present embodiment, a single source sensing wire 64, which has approximately the same thickness as the wire of the gate electrode, is used to electrically connect the source electrode 43 and the source terminal 53 or the source sensing terminal 54, respectively.When viewed in the z-direction, the source detection wire 64 is skewed or inclined with respect to both the x-direction and the y-direction.

[0037] Both the source terminal 53 and the source sensing terminal 54 are electrically connected to the source electrode 43 of the switching element 4. Specifically, the source terminal 53 and the source sensing terminal 54 are electrically connected to each other only via a conductor path provided by the series connection of the source electrode part 23, the source wires 63, the source electrode 43, and the source sensing wire 64. That is, the source terminal 53 and the source sensing terminal 54 are electrically connected to each other only via a conductor path that includes the source electrode 43 and are not electrically connected to each other via a conductor path that does not include the source electrode 43.

[0038] The resistance and inductance between the source electrode 43 and the tip 533 of the source terminal 53 are the sum of the resistances and inductances of the plurality of source wires, the source electrode part 23, and the source terminal 53. Conversely, the resistance and inductance between the source electrode 43 and the tip 543 of the source sensing terminal 54 are the sum of the resistances and inductances of the source sensing wire 64 and the source sensing terminal 54. Due to the arrangement of the plurality of source wires 63 and the source sensing wire 64 described above, the resistance and inductance between the source electrode 43 and the tip 533 of the source terminal 53 are smaller than the resistance and inductance between the source electrode 43 and the tip 543 of the source terminal 54. Source acquisition terminals 54.

[0039] The sealing resin 7 covers a portion of the substrate 1, a portion of the front electrically conductive layer 2, a portion of the rear electrically conductive layer 3, the switching element 4, a portion of the drain terminal 51, a portion of the gate terminal 52, a portion of the source terminal 53, a portion of the source sensing terminal 54, the gate wire 62, the multiple source wires 63, and the source sensing wire 64, for protective purposes. The material for the sealing resin 7 is not particularly restricted. The sealing resin can be made of a black epoxy resin into which a filler material may be mixed as needed.

[0040] In the present embodiment, the sealing resin 7 comprises a front surface 71, a rear surface 72, an end surface 73, and a pair of side surfaces 74. The front surface 71 faces in the same direction as the front surface 11 of the substrate 1. The rear surface 72 faces in the same direction as the rear surface 12 of the substrate 1. The end surface 73 connects the front surface 71 and the rear surface 72 and faces in the y-direction. The pair of side surfaces 74 connects the front surface 71 and the rear surface 72 and faces in opposite directions in the x-direction.

[0041] As it is in the Fig. 5 and Fig. As shown in Figure 9, in the present embodiment, an area of ​​the rear electrically conductive layer 3 is completely exposed relative to the rear surface 72 of the sealing resin 7. This area of ​​the rear electrically conductive layer 3 is flush with the rear surface 72.

[0042] As it is in the Fig. 1, Fig. 3, Fig. 5, Fig. 6 and Fig. As shown in Figure 8, in the present embodiment the sealing resin 7 has two projections 75. The two projections 75 extend in the y-direction opposite the end surface 73 and, in the illustrated example, are each formed in the shape of a rectangular parallelepiped. The two projections 75 are spaced apart from each other in the x-direction. The drain terminal 51 is located opposite the projection 75 on the right side. Fig. 3 forward, whereas the Gate Terminal 52, the Source Terminal 53 and the Source Acquisition Terminal 54 protrude opposite the projection 75 on the left side of the figure.

[0043] With the two projections 75 formed on the end surface 73, the sealing resin 7 has a base-side part 7a and a tip-side part 7b. The base-side part 7a is a section that is offset in the y-direction towards the base side of the drain terminal 51 and the source terminal 53 (towards the bond part 511 and the bond part 531), and is arranged in the x-direction between the drain terminal 51 and the source terminal 53. In the present embodiment, the base-side part 7a is provided by the section of the end surface 73 that is arranged between the two projections 75. The tip-side part 7b is a section that is offset in the direction of the tip 513 of the drain terminal 51 or the tip 533 of the source terminal 53, between the drain terminal 51 and the source terminal 53 in the x-direction.In the present embodiment, the tip-side part 7b is provided by a section of the outermost end of each of the two projections 75 in the y-direction, which is positioned between the drain terminal 51 and the source terminal 53. That is, the semiconductor device A1 has two tip-side parts 7b.

[0044] In the present embodiment, the sealing resin 7 has lateral recesses 78. In the illustrated example, the lateral recesses 78 are recessed or set back from the front surface 71 and the side surfaces 74 and are in the form of a rectangular parallelepiped. The insulated parts 25 of the front electrically conductive layer 2 are partially exposed relative to the lateral recesses 78. Each lateral recess 78 has a lower surface 781. As shown in Fig. As shown in Figure 10, the lower surfaces 781 are flush with the exposed surfaces of the isolated parts 25.

[0045] The semiconductor component A1, which has such a structure, can be used without restriction in various applications, for example as a component of a pulse generator that is built into devices such as an experimental beam accelerator, a kicker, a medical cancer treatment system, an X-ray generator and a plasma generator, and as a component of a high-voltage power supply or a relay circuit, to name a few examples.

[0046] In the present embodiment, the drain terminal 51 and the source terminal 53 are arranged adjacent to each other, as shown in Fig. As shown in Figure 4. Such an arrangement avoids the need to configure the conductor path connecting drain terminal 51 and drain electrode 41, and the conductor path connecting source terminal 53 and source electrode 43, in such a way as to avoid the conductor path connecting gate terminal 52 and gate electrode 42, or to avoid or circumvent the conductor path connecting source sensing terminal 54 and source electrode 43. This reduces the need to provide a bent or extended section in the conductor path connecting drain terminal 51 and drain electrode 41, and in the conductor path connecting source terminal 53 and source electrode 43, thereby reducing the inductances of these conductor paths.In particular, the conductor path connecting the source terminal 53 and the source electrode 43 is electrically connected to the conductor path connecting the source sensing terminal 54 and the source electrode 43. When the source terminal 53 is at a reference potential upon application of a gate drive voltage, the electromotive force generated by the inductance cancels out or reduces the drive voltage applied across the gate terminal 52 and the source terminal 53, provided the inductance of the conductor path connecting the source terminal 53 and the source electrode 43 is excessively high. In the present embodiment, the source sensing terminal 54 is provided separately from the source terminal 53 for applying the gate drive voltage, which in turn activates the switching element 4 to allow current to flow.Such an arrangement allows the drive voltage to be reliably applied without being affected by the inductance of the conduction path connecting the source terminal 53 and the source electrode 43. If the switching element 4 is a SiC switching element, the transconductance, which is the gradient of the drain current with respect to the drive voltage, tends to be small compared to that of a Si switching element, so that a sufficient drain current cannot be obtained unless the drive voltage reaches a predetermined voltage. However, according to the present embodiment, a sufficient drain current is obtained with a current change of hundreds of amperes in a microsecond or less, resulting in an increased response rate. Furthermore, as described in the... Fig. 1 and Fig. As shown in Figure 4, the sealing resin 7 is formed with the base-side part 7a and the tip-side part 7b. The presence of the base-side part 7a and the tip-side part 7b increases the "distance along the surface," which is the distance connecting the point where the drain terminal 51 protrudes from the sealing resin 7 and the point where the source terminal 53 protrudes from the sealing resin 7, along the surface of the sealing resin 7. The longer the "distance along the surface," the higher the tensile strength between the drain terminal 51 and the source terminal 53. Consequently, the semiconductor device A1 achieves improved tensile strength and improved response time.

[0047] The base-side part 7a and the tip-side part 7b are easily provided between the drain terminal 51 and the source terminal 53 by providing the projections 75 that extend beyond the end face 73.

[0048] Furthermore, as it is in Fig. As shown in Figure 4, the distance d13 between the centerline C1 of the drain terminal 51 and the centerline C3 of the source terminal 53 in the x-direction is greater than the distance d34 between the centerline C3 of the source terminal 53 and the centerline C4 of the source sensing terminal 54 in the x-direction, and greater than the distance d24 between the centerline C4 of the source sensing terminal 54 and the centerline C2 of the gate terminal 52 in the x-direction. Such an arrangement increases the distance along the surface between the drain terminal 51 and the source terminal 53, which is advantageous for improving the withstand stress.

[0049] Source terminal 53 and source sensing terminal 54 are located adjacent to each other. Therefore, the conductor path connecting gate electrode 42 and gate terminal 52 does not need to be placed between the conductor path connecting source electrode 43 and source terminal 53, and the conductor path connecting source electrode 43 and source sensing terminal 54. This reduces the inductances of these conductor paths, which is beneficial for improving response speed.

[0050] The phantom line, an extension of the center line C3 of the source terminal 53 in the y-direction, intersects the switching element 4. In this arrangement, the switching element 4 and the source terminal 53 are not undesirably far apart, which contributes to the reduction of resistance and inductance between the source electrode 43 and the source terminal 53. The greater the inductance of the current path formed by the drain terminal 51, the switching element 4, and the source terminal 53, the greater the electromotive force generated by such an inductor at the time of switch-off. If the electromotive force is excessively large, the element's withstand voltage can be exceeded, leading to breakdown.In the present embodiment, although the use of the source detection terminal 54 enables high-speed switching, the inductance between the source electrode 54 and the source terminal 53 is reduced, thus preventing element breakdown.

[0051] Furthermore, in the present embodiment, the phantom line, as an extension of the centerline C1 of the drain terminal 51 in the y-direction, does not intersect the switching element 4. This means that the drain terminal 51 is sufficiently far away from the source terminal 53, which is advantageous for improving the withstand voltage.

[0052] In the present embodiment, the phantom line, as an extension of the centerline C4 of the source detection terminal 54 in the y-direction, does not intersect the switching element 4. However, it should be noted that such an arrangement is applied to a case where the dimension of the switching element 4 is relatively small when viewed in the z-direction. Depending on the dimension of the switching element 4, or similar factors, the phantom line, as an extension of the centerline C4 of the source detection terminal 54 in the y-direction, may intersect the switching element 4.

[0053] As it is in Fig. As shown in Figure 10, the insulated parts 25 are exposed relative to the sealing resin 7 at the lateral recesses 78, and the upper surfaces of the insulated parts 25 are aligned flush with the respective lower surfaces 781 in the figure. Therefore, when forming the sealing resin 7 using a mold in the process of manufacturing the semiconductor device A1, the mold can be pressed against the insulated parts 25. The insulated parts 25 partially cover the substrate 1 and consequently prevent the pressure applied by the mold from being exerted directly on the substrate 1. This is advantageous for preventing breakage of the ceramic substrate 1. Furthermore, the insulated parts 25 are spaced apart from each other and insulated from the sections of the front electrically conductive layer 2, which provides various conduction paths.

[0054] Therefore, the insulated parts 25 exposed on the outside of the semiconductor component A1 do not cause an unintentional short circuit or the like.

[0055] The Fig. Figures 11-20 show further embodiments of the present disclosure. In these figures, those elements that are identical to or similar to those of the preceding embodiment are provided with the same reference numerals as those used for the preceding embodiment. <Zweites Beispiel>

[0056] Fig. Figure 11 shows a semiconductor component according to a second example of the present disclosure.

[0057] In the semiconductor component A2, the sealing resin 7 has a single projection 75. In the present embodiment, the projection 75 is arranged in the x-direction between the drain terminal 51 and the source terminal 53. The drain terminal 51, the gate terminal 52, the source terminal 53, and the source sensing terminal 54 project from the end face 73. Two base-side parts 7a are provided by the section of the end face 73 located between the drain terminal 51 and the projection 75, and by the section of the end face 73 located between the source terminal 53 and the projection 75. Furthermore, the tip-side part 7b is provided by the outermost end of the projection 75 in the y-direction.

[0058] The semiconductor component A2 also achieves improved standby voltage and response speed. <Drittes Beispiel>

[0059] Fig. Figure 12 shows a semiconductor component according to a third example of the present disclosure.

[0060] In the semiconductor component A3, the sealing resin 7 has three projections 75. The three projections 75 are spaced apart from each other in the x-direction. The drain terminal 51 projects from the projection 75 on the right side of the figure. The gate terminal 52, the source terminal 53, and the source detection terminal 54 project from the projection 75 on the left side of the figure. The projection 75 in the middle of the figure is located between the drain terminal 51 and the source terminal 53. No terminals of the drain terminal 51, the gate terminal 52, the source terminal 53, or the source detection terminal 54 project from this projection 75.

[0061] In the present embodiment, two base-side parts 7a are provided by the sections of the end surface 73, which are arranged between adjacent projections 75. Furthermore, three tip-side parts 7b are also provided by sections of the outermost ends in the y-direction of the three projections 75, which are arranged between the drain terminal 51 and the source terminal 53.

[0062] The semiconductor component A3 also achieves improved standby voltage and response speed. <Viertes Beispiel >

[0063] Fig. Figure 13 shows a semiconductor component according to a fourth example of the present disclosure.

[0064] In the semiconductor component A4, the sealing resin 7 has a single projection 75. The drain terminal 51 projects from the end face 73. The gate terminal 52, the source terminal 53, and the source sensing terminal 54 also project from the projection 75. In the present embodiment, the base-side part 7a is provided by a section of the end face 73 located between the drain terminal 51 and the source terminal 53. The tip-side part 7b is provided by a section of the outermost end in the y-direction of the projection 75 located between the drain terminal 51 and the source terminal 53.

[0065] The semiconductor component A4 also achieves improved standby voltage and response speed. <Fünftes Beispiel>

[0066] Fig. Figure 14 shows a semiconductor device according to a fifth example of the present disclosure.

[0067] In the semiconductor component A5, the sealing resin 7 has two projections 75. The drain terminal 51 projects from the projection 75 on the right side of the figure. Projecting from the projection 75 on the left side of the figure are the gate terminal 52, the source terminal 53, and the source detection terminal 54. Each of the two projections 75 has an inclined surface that extends upwards or obliquely in the y-direction from the outermost end in the y-direction in the figure. These inclined surfaces are connected to each other. In the present embodiment, the base-side part 7a is provided by the section in which the inclined surfaces of the two projections 75 are connected to each other. Two tip-side parts 7b are provided by sections of the outermost end in the y-direction of the two projections 75 that are arranged between the drain terminal 51 and the source terminal 53.

[0068] The semiconductor component A5 also achieves improved withstand voltage and response speed. The surface connecting the base-side part 7a and the tip-side part 7b does not necessarily have to extend along the y-direction, but can be inclined with respect to the y-direction, as is provided in the present embodiment. <Sechstes Beispiel >

[0069] Fig. Figure 15 shows a semiconductor component according to a sixth example of the present disclosure.

[0070] In the semiconductor component A6, the sealing resin 7 does not have a projection 75 but rather a recess 76. The recess 76 is recessed in the y-direction relative to the end surface 73, specifically between the drain terminal 51 and the source terminal 53. In the present embodiment, the base-side part 7a is provided by the bottom surface of the recess 76, and the two tip-side parts 7b are provided by the sections of the end surface 73 that are arranged between the drain terminal 51 and the source terminal 53.

[0071] The semiconductor component A6 also achieves improved standby voltage and response speed. <Execution>

[0072] Fig. Figure 16 shows a semiconductor component according to an embodiment of the present disclosure.

[0073] In the semiconductor component A7 according to the present embodiment, the tip 513 of the drain terminal 51 is arranged in the z-direction at a position that differs from that of the tip 523 of the gate terminal 52, the tip 533 of the source terminal 53, and the tip 543 of the source sensing terminal 54. The tip 523 of the gate terminal 52, the tip 533 of the source terminal 53, and the tip 543 of the source sensing terminal 54 are located at the same position in the z-direction. Furthermore, in the z-direction, the position where the drain terminal 51 protrudes from the sealing resin 7 differs from the position where the gate terminal 52, the source terminal 53, and the source sensing terminal 54 protrude from the sealing resin 7.Such a configuration can be provided by making the bend height of the bent part 512 different from the bend height of the bent part 522, the bent part 532, and the bent part 542. In the example shown, the two projections 75, which provide the base-side part 7a and the tip-side part 7b, have a configuration similar to that of semiconductor device A1, although configurations as used in semiconductor devices A2-A6 can also be used.

[0074] The semiconductor component A7 also achieves improved withstand voltage and response speed. Furthermore, in this embodiment, the distance along the surface between the drain terminal 51 and the source terminal 53 is increased by an amount corresponding to the difference in the z-direction between the position where the drain terminal 51 protrudes relative to the sealing resin 7 and the position where the source terminal 53 protrudes relative to the sealing resin 7. This is advantageous for improving the withstand voltage of the semiconductor component A7. When the semiconductor component A7 is mounted on a printed circuit board, a sufficient distance along the surface between the drain terminal 51 and the source terminal 53 is also easily ensured on the printed circuit board. <Achtes Beispiel >

[0075] Fig. Figure 17 shows a semiconductor component according to an eighth example of the present disclosure.

[0076] In semiconductor device A8, the front electrically conductive layer 2 has a gate electrode part 22 and an additional source electrode part 24, in addition to the drain electrode part 21, the source electrode part 23, and the two insulated parts 25. The gate electrode part 22 and the additional source electrode part 24 are made of the same material as the drain electrode part 21, the source electrode part 23, and the two insulated parts 25. The gate electrode part 22 is the second electrode of the present disclosure. The additional source electrode part 24 is the additional third electrode of the present disclosure.

[0077] The additional source electrode part 24 is spaced in the x-direction from the source electrode part 23, such that, with respect to the source electrode part 23, it is opposite that section of the drain electrode part 21 to which the bond part 511 is bonded. In the present embodiment, the bond part 541 of the source sensing terminal 54 is conductively bonded to the additional source electrode part 24. The source sensing wire 64 is also connected to the additional source electrode part 24. Thus, the source electrode 43 of the switching element 4 and the source terminal 53 are electrically connected to each other via the source sensing wire 64 and the additional source electrode part 24.

[0078] The gate electrode part 22 is spaced in the x-direction from the additional source electrode part 24, such that it is opposite the source electrode part 23 with respect to the additional source electrode part 24, or rather, located on the other side of part 24. In the present embodiment, the bond part 521 of the gate terminal 52 is conductively bonded to the gate electrode part 22. The gate wire 62 is also connected to the gate electrode part 22. Consequently, the gate electrode 42 of the switching element 4 and the gate terminal 52 are electrically connected to each other via the gate wire 62 and the gate electrode part 22.

[0079] The semiconductor component A8 also achieves improved withstand voltage and response speed. Furthermore, bonding the gate terminal 52 to the gate electrode part 22 and the source sensing terminal 54 to the additional source electrode part 24 increases the bond strength of the gate terminal 52 and the source sensing terminal 54. Accordingly, the relative position between each of the terminals and the substrate 1 is reliably fixed, allowing each terminal to be reliably positioned in a suitable location in the mold during the casting of the sealing resin 7. <Neuntes Beispiel >

[0080] Fig. Figure 18 shows a semiconductor device according to a ninth example of the present disclosure.

[0081] The semiconductor component A9 differs from the preceding embodiments in the arrangement of the switching element 4. In the present embodiment, all four outer edges 45 of the switching element 4 are inclined with respect to the x-direction and with respect to the y-direction. In the illustrated example, the four outer edges 45 are inclined by 45 degrees with respect to the x-direction and with respect to the y-direction.

[0082] The source electrode 43 covers most of the switching element 4 when viewed in the z-direction and is generally rectangular. Due to the arrangement of the switching element 4 described above, the diagonals of the source electrode 43 extend along the x- and y-directions. In such an arrangement, the maximum dimension of the source electrode 43 in the x-direction is larger than in the preceding embodiments. As a result, the number of source wires 63 connected to the source electrode 43 is increased to six in the illustrated example.

[0083] The semiconductor device A9 also achieves improved withstand voltage and response speed. Increasing the number of source wires 63 reduces the resistance and inductance between the source electrode 43 and the source terminal 53. This is beneficial for improving the response speed of the semiconductor device A9. The semiconductor device A9 has the front electrically conductive layer 2, which includes the gate electrode part 22 and the additional source electrode part 24, although it can also have a configuration similar to that of the semiconductor device A1, which does not have the gate electrode part 22 and the additional source electrode part 24. <Zehntes Beispiel >

[0084] Fig. Figure 19 shows a semiconductor component according to a tenth example of the present disclosure.

[0085] In semiconductor component A10, the switching element 4 is arranged in the same manner as in semiconductor component A9. The drain electrode portion 21 of the front electrically conductive layer 2 has a cutout 211. The cutout 211 is located on the opposite side of the source electrode portion 23, with respect to the switching element 4 in the y-direction, and is recessed downwards in the y-direction in the figure. The cutout 211 has an inclined side 212. The inclined side 212 is inclined with respect to both the x-direction and the y-direction and is parallel to an outer edge 45 of the switching element 4. The inclined side 212 and the outer edge 45 are adjacent to each other.

[0086] The semiconductor component A10 also achieves improved withstand voltage and response speed. Furthermore, the provision of the cutout 211 with the angled side 212 in the drain electrode part 21 of the front electrically conductive layer 2 enables the switching element 4 to be mounted on the drain electrode part 21 by using the angled side 212 as a reference for orientation or alignment of the switching element 4. <Elftes Beispiel>

[0087] Fig. Figure 20 shows a semiconductor component according to an eleventh example of the present disclosure.

[0088] In semiconductor component A11, the switching element 4 is arranged in the same manner as in semiconductor components A9 and A10. The drain electrode portion 21 of the front electrically conductive layer 2 has a cutout 211. The cutout 211 is provided on the opposite side of the source electrode portion 23, with respect to the switching element 4 in the y-direction, and is shown in the figure as extending downwards in the y-direction. The cutout 211 of the present embodiment is arranged on the opposite side of the cutout 211 of semiconductor component A10 in the x-direction, extending across the center line C3. The cutout 211 has an inclined side 212. The inclined side 212 is inclined with respect to both the x-direction and the y-direction and is parallel to an outer edge 45 of the switching element 4. The inclined side 212 and the outer edge 45 are arranged adjacent to each other.

[0089] The semiconductor component A11 also achieves improved withstand voltage and response speed. Furthermore, by providing the cutout 211 with the angled side 212 in the drain electrode part 21 of the front electrically conductive layer 2, it is made possible for the switching element 4 to be mounted on the drain electrode part 21 using the angled side 212 as a reference for the orientation of the switching element 4.

[0090] The semiconductor device according to the present disclosure is not limited to the foregoing embodiments. The specific configuration of each part of the semiconductor device according to the present disclosure can be varied in various ways. For example, the source electrode and the source terminal can be connected to each other via a flat metal plate instead of wires, although the foregoing embodiments describe a connection using only wires and the electrode part. Furthermore, the source sensing terminal can be replaced by another terminal for communicating with other types of signals. Additionally, another terminal can be added for communicating signals other than the source sensing signals.Instead of forming a front electrically conductive layer on the insulating substrate and connecting the front conductive layer to the drain terminal, the switching element can be arranged on an island that is integrally formed with the drain terminal, and each electrode and terminal can be directly connected to each other via a wire. Although the embodiments describe only the use of a single switching element, a plurality of switching elements can be connected in parallel, and / or a protection diode chip can be included.

[0091] The present disclosure includes examples in accordance with the following clauses. Clause 1.

[0092] Semiconductor component with: a switching element comprising a first electrode, a second electrode and a third electrode, configured to provide ON / OFF control between the first electrode and the third electrode by means of a control voltage applied across the second electrode and the third electrode while a potential difference is applied between the first electrode and the third electrode; a substrate that has a front surface and a back surface and is made of an insulating material; a front electrically conductive layer formed on the front surface of the substrate and containing a first electrode part to which the first electrode of the switching element is bonded; a first terminal that is electrically connected to the first electrode via the first electrode part; a second terminal that is electrically connected to the second electrode; a third terminal that is electrically connected to the third electrode; and a sealing resin that covers at least part of the front electrically conductive layer, part of each terminal of the first to third terminals and the switching element, wherein the first to third terminals project from the sealing resin in a direction of the same side, along a first direction which is perpendicular to a thickness direction of the substrate, wherein the first to third terminals are spaced apart from each other in a second direction, the side perpendicular to the thickness direction and to the first direction, wherein of the first to third terminals, the first terminal is arranged on an outermost side in the second direction, and wherein the sealing resin contains: a base-side part that is arranged in the second direction between the first terminal and the third terminal and that is offset in the first direction to a switching element side of the first terminal and the third terminal; and a pointed part which is offset in the first direction towards a pointed side of the first and third terminals which is exposed opposite the sealing resin. Clause 2.

[0093] Semiconductor component according to clause 1, wherein a distance of the sealing resin running along a surface between the first terminal and the third terminal is longer than a distance between the first terminal and the third terminal. Clause 3.

[0094] Semiconductor component according to claim 1 or 2, wherein the sealing resin has an end surface that is perpendicular to the first direction. Clause 4.

[0095] Semiconductor component according to clause 3, wherein the sealing resin has at least one projection, each projection of the at least one projection extending in the first direction from the end face towards the tip side of the first terminal, and the base-side part has the end surface and the tip-side part has an end surface on the tip side of each projection of the at least one projection. Clause 5.

[0096] Semiconductor component according to clause 4, wherein the at least one projection of the sealing resin has a first projection and a second projection, where the first terminal protrudes from the first ledge, and with the third terminal protruding from the second projection. Clause 6.

[0097] Semiconductor component according to clause 3, wherein the sealing resin is formed with a recess which is recessed or set back from the end surface in the first direction, and The base-side part includes the deepest section of the recess, and the tip-side part includes the end surface. Clause 7.

[0098] Semiconductor component according to any one of clauses 1-6, further comprising a fourth terminal electrically connected to the third electrode, the third terminal being located adjacent to the first terminal, where the distance between the first terminal and the third terminal in the second direction is greater than the distance in the second direction between the third terminal and one of the second terminals and the fourth terminal, which is adjacent to the third terminal. Clause 8.

[0099] Semiconductor component according to clause 7, wherein the distance between the first terminal and the third terminal in the second direction is greater than the distance between the second terminal and the fourth terminal in the second direction. Clause 9.

[0100] Semiconductor component according to clause 7 or 8, wherein the fourth terminal is located adjacent to the third terminal. Clause 10.

[0101] Semiconductor device according to any one of clauses 7-9, wherein a resistance and an inductance between the third electrode and a tip of the third terminal are smaller than a resistance and an inductance between the third electrode and a tip of the fourth terminal. Clause 11.

[0102] Semiconductor component according to clause 10, wherein the third terminal and the fourth terminal are electrically connected to each other only via a conductor path that includes the third electrode. Clause 12.

[0103] Semiconductor component according to any one of clauses 1-11, wherein a phantom line, which is an extension in the first direction of a center line of the third terminal, intersects the switching element in the second direction. Clause 13.

[0104] Semiconductor component according to clause 12, wherein a phantom line, which is an extension in the first direction of a center line of the first terminal, does not intersect the switching element in the second direction. Clause 14.

[0105] Semiconductor component according to any one of clauses 1-13, wherein the front electrically conductive layer has an insulated part which is spaced apart and insulated from the first electrode part, and wherein the insulated part is partially exposed to the sealing resin. Clause 15.

[0106] Semiconductor component according to any one of clauses 1-14, wherein the switching element is rectangular and has four outer edges, and where each of the four outer edges extends along the first direction or the second direction. Clause 16.

[0107] Semiconductor component according to any one of clauses 1-14, wherein the switching element is rectangular and has four outer edges, and where each of the four outer edges is inclined or obliquely aligned with respect to both the first direction and the second direction. Clause 17.

[0108] Semiconductor component according to clause 16, wherein the first electrode part is formed with a cutout having an inclined side parallel to the outer edge of the switching element. Clause 18.

[0109] Semiconductor component according to any one of clauses 1-17, wherein the first terminal and the third terminal protrude at different positions in the thickness direction relative to the sealing resin. Clause 19.

[0110] Semiconductor device according to any one of clauses 1-18, wherein the front electrically conductive layer has a third electrode part spaced apart from the first electrode part and to which the third terminal is bonded. Clause 20.

[0111] Semiconductor component according to clause 19, wherein the front layer has an electrically conductive layer: a second electrode part, which is spaced apart from the first electrode part and to which the second terminal is bonded; and an additional third electrode part, which is spaced apart from the first electrode part and the third electrode part and to which the fourth terminal is bonded. Clause 21.

[0112] Semiconductor component with: a switching element comprising a first electrode, a second electrode and a third electrode, configured to provide ON / OFF control between the first electrode and the third electrode by means of a control voltage applied across the second electrode and the third electrode while a potential difference is applied between the first electrode and the third electrode; a substrate that has a front surface and a back surface and is made of an insulating material; a front electrically conductive layer formed on the front surface of the substrate and comprising a first electrode part to which the first electrode of the switching element is bonded; a first terminal which is electrically connected to the first electrode via the first electrode part; a second terminal that is electrically connected to the second electrode; a third terminal that is electrically connected to the third electrode; and a sealing resin that covers at least part of the front electrically conductive layer, part of each terminal of the first to third terminals and the switching element, wherein the first to third terminals project from the sealing resin towards an equal side along a first direction that is perpendicular to a thickness direction of the substrate, wherein the first to third terminals are spaced apart from each other in a second direction that is perpendicular to both the thickness direction and the first direction, where of the first to third terminals, the first terminal is located on an outermost side in the second direction, and where the distance between the first terminal and the third terminal in the second direction is greater than the distance between the third terminal and the second terminal in the second direction. Clause 22.

[0113] Semiconductor component according to clause 21, further comprising a fourth terminal which is electrically connected to the third electrode and which is further apart from the first terminal than the third terminal, wherein the third terminal is located adjacent to the first terminal. Clause 23.

[0114] Semiconductor component according to any one of clauses 1-22, wherein the switching element comprises a SiC switching element. Clause 24.

[0115] Semiconductor component according to any one of clauses 1-23, wherein the first terminal is a drain terminal of the switching element, wherein the second terminal is a gate terminal of the switching element, and wherein the third terminal is a source terminal of the switching element. Clause 25.

[0116] Semiconductor component according to clause 24, wherein the source terminal, when viewed in the first direction, is exposed near the center of the sealing resin relative to the sealing resin. Clause 26.

[0117] Semiconductor component according to any one of clauses 1-25, further comprising a rear electrically conductive layer formed on the back surface of the substrate and exposed to the sealing resin. Clause 27.

[0118] Semiconductor component comprising: a switching element having a first electrode, a second electrode and a third electrode, configured to provide ON / OFF control between the first electrode and the third electrode by means of a drive voltage applied across the second electrode and the third electrode while a potential difference is applied between the first electrode and the third electrode; a first terminal which has a first electrode part to which the first electrode of the switching element is bonded; a second terminal that is electrically connected to the second electrode; a third terminal that is electrically connected to the third electrode; and a sealing resin that covers at least part of the first electrode part, part of each of the first to third terminals and the switching element; wherein the first to third terminals project towards the same side from the sealing resin along a first direction that is perpendicular to a thickness direction of the switching element, wherein the first to third terminals are spaced apart from each other in a second direction that is perpendicular to both the thickness direction and the first direction, where of the first to third terminals, the first terminal is located on an outermost side in the second direction, and the sealing resin exhibits: a base-side part that is arranged between the first terminal and the third terminal in the second direction and that is offset in the first direction towards a switching element side of the first terminal and the third terminal; and a pointed part that is offset in the first direction towards a pointed side of the first and / or third terminal that is exposed opposite the sealing resin. Clause 28.

[0119] Semiconductor component according to clause 27, wherein of the first to third terminals the first terminal is arranged on an outermost side in the second direction, where, of the first to third terminals, the third terminal is arranged at a midpoint in the second direction, and where the distance between the first terminal and the third terminal in the second direction is greater than the distance between the third terminal and the second terminal in the second direction. Clause 29.

[0120] Semiconductor component comprising: a switching element having a first electrode, a second electrode and a third electrode, configured to provide ON / OFF control between the first electrode and the third electrode by means of a control voltage applied across the second electrode and the third electrode, with a potential difference being applied between the first electrode and the third electrode; a first terminal which has a first electrode part to which the first electrode of the switching element is bonded; a second terminal that is electrically connected to the second electrode; a third terminal that is electrically connected to the third electrode; a fourth terminal, which is electrically connected to the third electrode; and a sealing resin that covers at least part of the first electrode part, part of each of the first to fourth terminals and the switching element; wherein the first to fourth terminals protrude from the sealing resin towards an equal side along a first direction that is perpendicular to a thickness direction of the switching element, wherein the first to fourth terminals are spaced apart from each other in a second direction that is perpendicular to both the thickness direction and the first direction, where, of the first to fourth terminals, the third terminal is arranged with a center point in the second direction, and where the inductance between the third electrode and the third terminal is smaller than the inductance between the third electrode and the fourth terminal.

Claims

[1] Semiconductor component (A7) with: a switching element (4) having a first electrode (41), a second electrode (42) and a third electrode (43) and configured to provide ON / OFF control between the first electrode (41) and the third electrode (43) by means of a control voltage applied across the second electrode (42) and the third electrode (43) while a potential difference is applied between the first electrode (41) and the third electrode (43); a substrate (1) having a front surface (11) and a back surface (12) and made of an insulating material; a front electrically conductive layer (2) formed on the front surface (11) of the substrate (1) and containing a first electrode part (21) to which the first electrode (41) of the switching element (4) is bonded; a first terminal (51) which is electrically connected to the first electrode (41) via the first electrode part (21); a second terminal (52) which is electrically connected to the second electrode (42); a third terminal (53) which is electrically connected to the third electrode (43); and a sealing resin (7) covering at least part of the front electrically conductive layer (2), part of each terminal of the first to third terminals (51, 52, 53) and the switching element (4), wherein the first to third terminals (51, 52, 53) project from the sealing resin (7) in a direction towards the same side, along a first direction (y) which is perpendicular to a thickness direction (z) of the substrate, wherein the first to third terminals (51, 52, 53) are spaced apart from each other in a second direction (x) that is perpendicular to the thickness direction (z) and to the first direction (y), wherein of the first to third terminals (51, 52, 53) the first terminal (51) is arranged on an outermost side in the second direction (x), wherein the sealing resin (7) has an end surface (73) that is perpendicular to the first direction (y), wherein the first terminal (51) and the third terminal (53) are arranged adjacent to each other in the second direction (x) at the end face (73), wherein the first terminal (51) on the end face (73) has a position in the thickness direction (z) that differs from those of the second and third terminals (52, 53), wherein the sealing resin (7) comprises: - a base-side part (7a) that is arranged in the second direction (x) between the first terminal (51) and the third terminal (53) and that is offset in the first direction (y) to a switching element side of the first terminal (51) and the third terminal (53); and - a pointed part (7b) that is offset in the first direction (y) towards a pointed side of the first (51) and third terminal (53) that is exposed opposite the sealing resin (7), wherein the front electrically conductive layer (2) has an insulated part (25) which is spaced apart and insulated from the first electrode part (21), wherein the sealing resin (7) has a side surface (74) perpendicular to the second direction (x) and is formed with a first recess (78) which is set back from the side surface (74) at least in the second direction (x), and wherein the insulated part (25) is partially exposed to the sealing resin (7) through the first recess (78). [2] Semiconductor component according to claim 1, wherein a distance of the sealing resin (7) extending along a surface between the first terminal (51) and the third terminal (53) is longer than a distance between the first terminal (51) and the third terminal (53). [3] Semiconductor component according to claim 1 or 2, wherein the sealing resin (7) has at least one projection (75), each of which projects in the first direction (y) from the end face (73) of the sealing resin (7) towards the tip side of the first terminal (51), and the base-side part (7a) of the sealing resin (7) corresponds to the end surface (73) of the sealing resin (7), and the pointed part (7b) of the sealing resin (7) corresponds to an end surface (73) of the at least one projection (75). [4] Semiconductor component according to claim 3, wherein the at least one projection of the sealing resin (7) has a first projection (75) and a second projection (75), wherein the first terminal (51) projects from the first projection (75), and the third terminal (53) protrudes from the second projection (75). [5] Semiconductor component according to claim 1 or 2, wherein the sealing resin (7) is formed with a second recess (76) which is recessed or set back from the end surface (73) of the sealing resin (7) in the first direction (y), and the base-side part (7a) of the sealing resin (7) corresponds to a deepest section of the second recess (76), and the pointed part (7b) of the sealing resin (7) corresponds to the end surface (73) of the sealing resin (7). [6] Semiconductor component according to any one of claims 1-5, further comprising a fourth terminal (54) which is electrically connected to the third electrode (43), wherein a distance between the first terminal (51) and the third terminal (53) in the second direction (x) is greater than a distance in the second direction (x) between the third terminal (53) and one of the second terminal (52) and the fourth terminal (54) which is arranged adjacent to the third terminal (53). [7] Semiconductor component according to claim 6, wherein the distance between the first terminal (51) and the third terminal (53) in the second direction (x) is greater than the distance between the second terminal (52) and the fourth terminal (54) in the second direction (x). [8] Semiconductor component according to claim 6 or 7, wherein the fourth terminal (54) is arranged adjacent to the third terminal (53). [9] Semiconductor device according to any one of claims 6-8, wherein a resistance and an inductance between the third electrode (43) and a tip (533) of the third terminal (53) are smaller than a resistance and an inductance between the third electrode (43) and a tip (543) of the fourth terminal (54). [10] Semiconductor component according to claim 9, wherein the third terminal (53) and the fourth terminal (54) are electrically connected to each other only via a conductor path which includes the third electrode (43). [11] Semiconductor component according to any one of claims 1-10, wherein a phantom line, which is an extension in the first direction (y) of a center line of the third terminal (53), intersects the switching element (4). [12] Semiconductor component according to claim 11, wherein a phantom line, which is an extension in the first direction (y) of a center line of the first terminal (51), does not intersect the switching element (4). [13] Semiconductor component according to any one of claims 1-12, wherein the switching element (4) is rectangular and has four outer edges (45), and wherein each of the four outer edges (45) extends along the first direction (y) or the second direction (x). [14] Semiconductor component according to any one of claims 1-12, wherein the switching element (4) is rectangular and has four outer edges (45), and wherein each of the four outer edges (45) is inclined or obliquely oriented relative to both the first direction (y) and the second direction (x). [15] Semiconductor component according to claim 14, wherein the first electrode part (21) is formed with a cutout (211) having an inclined side (212) that is parallel to the outer edge of the switching element (4). [16] Semiconductor component according to any one of claims 1-15, wherein the front electrically conductive layer has a third electrode part (23) which is spaced apart from the first electrode part (21) and to which the third terminal (53) is bonded. [17] Semiconductor component according to claim 16, wherein the front layer has an electrically conductive layer: a second electrode part (22) which is spaced apart from the first electrode part (21) and to which the second terminal (52) is bonded; and an additional third electrode part (24) which is spaced apart from the first electrode part (21) and the third electrode part (23) and to which the fourth terminal (54) is bonded. [18] Semiconductor component with: a switching element (4) having a first electrode (41), a second electrode (42) and a third electrode (43) and configured such that an ON / OFF control between the first electrode (41) and the third electrode (43) is provided by a control voltage applied via the second electrode (42) and the third electrode (43) while a potential difference is applied between the first electrode (41) and the third electrode (43); a substrate (1) having a front surface (11) and a back surface (12) and made of an insulating material; a front electrically conductive layer (2) formed on the front surface of the substrate (1) and comprising a first electrode part (21) to which the first electrode (41) of the switching element is bonded; a first terminal (51) which is electrically connected to the first electrode (41) via the first electrode part (21); a second terminal (52) which is electrically connected to the second electrode (42); a third terminal (53) which is electrically connected to the third electrode (43); and a sealing resin (7) covering at least part of the front electrically conductive layer (2), part of each terminal of the first to third terminals (51, 52, 53) and the switching element (4), wherein the first to third terminal (51, 52, 53) extend from the sealing resin (7) towards an equal side along a first direction (y) which is perpendicular to a thickness direction (z) of the substrate (1), wherein the first to third terminals (51, 52, 53) are spaced apart from each other in a second direction (x) that is perpendicular to both the thickness direction (z) and the first direction (y), wherein the sealing resin (7) has an end surface (73) that is perpendicular to the first direction (y), wherein the first terminal (51) and the third terminal (53) are arranged adjacent to each other in the second direction (x) at the end face (73), wherein the first terminal (51) on the end face (73) has a position in the thickness direction (z) that differs from those of the second and third terminals (52, 53), wherein of the first to third terminals (51, 52, 53) the first terminal (51) is arranged on an outermost side in the second direction (x), and where the distance between the first terminal (51) and the third terminal (53) in the second direction (x) is greater than the distance between the third terminal (53) and the second terminal (52) in the second direction (x), wherein the front electrically conductive layer (2) has an insulated part (25) which is spaced apart and insulated from the first electrode part (21), wherein the sealing resin (7) has a side surface (74) perpendicular to the second direction (x) and is formed with a first recess (78) which is set back from the side surface (74) at least in the second direction (x), and wherein the insulated part (25) is partially exposed to the sealing resin (7) through the first recess (78). [19] Semiconductor component according to claim 18, further comprising a fourth terminal (54) which is electrically connected to the third electrode (43) and which is further apart from the first terminal (51) than the third terminal (53), wherein the third terminal (53) is arranged adjacent to the first terminal (51). [20] Semiconductor component according to any one of claims 1-19, wherein the switching element (4) comprises a SiC switching element. [21] Semiconductor component according to any one of claims 1-20, wherein the first terminal (51) is a drain terminal of the switching element (4), wherein the second terminal (52) is a gate terminal of the switching element (4) and wherein the third terminal (53) is a source terminal of the switching element (4). [22] Semiconductor component according to claim 21, wherein of the first to third terminals (51, 52, 53) the third terminal (53) is arranged at a center in the second direction (x). [23] Semiconductor component according to any one of claims 1-22, further comprising a rear electrically conductive layer (3) formed on the rear surface of the substrate (1) and exposed to the sealing resin (7). [24] Semiconductor component (A7) with: a switching element (4) having a first electrode (41), a second electrode (42) and a third electrode (43) and configured to provide ON / OFF control between the first electrode (41) and the third electrode (43) by means of a control voltage applied across the second electrode (42) and the third electrode (43), with a potential difference being applied between the first electrode (41) and the third electrode (43); a substrate (1) having a front surface (11) and a back surface (12) and made of an insulating material; a front electrically conductive layer (2) formed on the front surface (11) of the substrate (1) and containing a first electrode part (21), a first terminal (51) which is bonded to the first electrode (41) of the switching element (4) via the first electrode part (21); a second terminal (52) which is electrically connected to the second electrode (42); a third terminal (53) which is electrically connected to the third electrode (43); a fourth terminal (54) which is electrically connected to the third electrode (43); a sealing resin (7) covering at least part of the first electrode part (21), part of each of the first to fourth terminals (51, 52, 53, 54) and the switching element (4); and wherein the conductive layer (2) has an electrically conductive insulated part (25) which is spaced apart and insulated from the first terminal (51), the second terminal (52), the third terminal (53) and the fourth terminal (54) as well as from the first electrode part (21), wherein the first to fourth terminals (51, 52, 53, 54) project from the sealing resin (7) towards an equal side along a first direction (y) which is perpendicular to a thickness direction (z) of the substrate (1), wherein the first to fourth terminals (51, 52, 53, 54) are spaced apart from each other in a second direction (x) that is perpendicular to both the thickness direction (z) and the first direction (y), wherein the sealing resin (7) has an end surface (73) that is perpendicular to the first direction (y), wherein the first terminal (51) and the third terminal (53) are arranged adjacent to each other in the second direction (x) at the end face (73), wherein the first terminal (51) on the end face (73) has a position in the thickness direction (z) that differs from those of the second and third terminals (52, 53), where of the first to fourth terminals (51, 52, 53, 54) the third terminal (53) is arranged at a center in the second direction (x), and where the inductance between the third electrode (43) and the third terminal (53) is smaller than the inductance between the third electrode (43) and the fourth terminal (54), wherein the sealing resin (7) has a side surface (74) perpendicular to the second direction (x) and is formed with a first recess (78) which is set back from the side surface (74) at least in the second direction (x), and the insulated part (25) is partially exposed to the sealing resin (7) through the first recess (78).

Images