METHOD FOR MANUFACTURING A SEMICONDUCTOR COMPONENT FOR DETECTING ELECTROMAGNETIC RADIATION AND SEMICONDUCTOR COMPONENT

Abstract

Method for manufacturing a semiconductor component (1) comprising Deposition of a semiconductor component (5) or a plurality of semiconductor components (5) by microtransfer printing onto a component body (3) with a substrate (7) and an integrated circuit (9), wherein the semiconductor component (5) or each of the plurality of semiconductor components (5) has an active zone (11) for radiation reception, wherein in a parallel placement process the semiconductor components (5) are simultaneously placed onto the component bodies (3) and connected to each other while the latter are still in the assembly, wherein a plurality of semiconductor components (5) are transferred from a sacrificial wafer (52) to a target wafer (54) with the still connected component bodies (3) by means of a punch and placed onto it, wherein During parallel transfer, the stamp is pressed onto the semiconductor components (5) to be transferred, so that they adhere to the stamp. as soon as the punch moves in the opposite direction, the semiconductor components (5) are separated from the holding structures (30) by the breaks off webs (32) or their projections on the semiconductor body (5), leaving a break point (40) directly on an outside of the semiconductor component (5), the procedure further includes Arranging a diffuser (13) or a refractive agent on the semiconductor component (5) or the plurality of semiconductor components (5).

Description

[0001] The invention relates to a method for manufacturing an optical semiconductor component for detecting electromagnetic radiation and to such a semiconductor component.

[0002] A spectrometer allows the detection of a spectrum. It comprises multiple photodetectors, each of which detects radiation within a specific subrange of the spectrometer's overall measurement range. Such spectrometers can include an array of silicon photodiodes, for example, with integrated evaluation logic. Color filters, such as red, green, and blue, or, for narrower wavelength ranges, ambient light sensors (ALS) are used to adjust the wavelength selectivity of the photodiodes in spectroscopy applications.

[0003] DE 10 2005 061 206 A1 discloses a detector arrangement in which an optoelectronic detector chip is arranged on a microelectronic semiconductor chip to reduce the lateral space requirement and shorten the electrical connection.

[0004] US 2017 / 0225945 A1 describes a component in which a sensor is applied to a semiconductor substrate with an active electronic circuit using microtransfer printing.

[0005] US patent 9 161 448 B2 discloses a method for laser-assisted transfer welding of semiconductor components from a punch to a target substrate.

[0006] US 2016 / 0 204 033 A1 shows a method for separating substrates and a semiconductor chip.

[0007] DE 10 2015 117 940 A1 shows an optical sensor.

[0008] WO 2016 / 012 409 A2 discloses a device and a method for micro-transfer printing.

[0009] The task is to provide a semiconductor component for a spectrometer application.

[0010] Such a semiconductor component comprises: a component body with a substrate and an integrated circuit, and a semiconductor component or a plurality of semiconductor components, wherein the semiconductor component or each of the plurality of semiconductor components has an active zone for radiation reception and a break point, is arranged on the component body and is electrically conductively connected to the integrated circuit.

[0011] The semiconductor component is advantageously a chip, which in its unpackaged form is commonly referred to as a "die". The semiconductor components can be photodiodes or photodetectors, by means of which the radiation in the active region is detected and a radiation-dependent current or voltage is provided. The radiation is advantageously light, be it in the infrared, visible and / or ultraviolet range.

[0012] Every semiconductor component has a sensitive spectral range. This is the wavelength range in which radiation is detected. Depending on the detected radiation, a current or voltage is applied. The sensitive spectral range can have a wavelength-dependent relative sensitivity, where different wavelengths of the same intensity generate different voltages or currents. Typically, the sensitive spectral range exhibits a bell-shaped sensitivity curve across the wavelength. Semiconductor components can be microphotodiodes, that is, photodiodes with small spatial dimensions, which are deposited on the component body. By combining several semiconductor components with different sensitive spectral ranges, a spectrometer can be created.This can be achieved using highly integrated photodiodes with a narrow sensitive spectral range as semiconductor components, which are preferably arranged in photodiode arrays on the component body.

[0013] The component body features integrated circuit structures that can be electrically connected to the microphotodiodes. Such a component body can also be described as an intelligent substrate. It is made of silicon, for example.

[0014] The semiconductor component or the multitude of semiconductor components are advantageously applied to the component body by means of microtransfer printing.

[0015] A corresponding method for manufacturing a semiconductor component involves: depositing a semiconductor component or a multitude of semiconductor components onto a component body with a substrate and an integrated circuit using microtransfer printing, wherein the semiconductor component or each of the multitude of semiconductor components has an active zone for radiation reception. This method allows the integration and assembly of microphotodiode structures on a smart substrate.

[0016] Microtransfer printing is a parallel assembly process in which multiple semiconductor components are simultaneously transferred onto component bodies that are still connected within the wafer stack. The semiconductor components to be transferred are ejected from a sacrificial wafer upon contact with a punch and, after transfer, placed onto a target wafer, which is later separated into individual components. The break points on the semiconductor components result from this step. Microtransfer printing reduces costs compared to serial assembly. The semiconductor components may have a ridge-like extension with the break point at its end.

[0017] In one embodiment, the multitude of semiconductor components includes at least one semiconductor component whose sensitive spectral range differs from that of another semiconductor component within the multitude. By arranging several semiconductor components with different sensitive spectral ranges on the same component body, a semiconductor device can be formed that serves as a spectrometer.

[0018] Bandgap engineering encompasses various methods for tailoring the sensitive spectral range of a semiconductor component to the desired specifications. One such method is the targeted selection and combination of semiconductor materials for the component. A customized bandwidth design enables the fabrication of very narrowband photodiode structures as semiconductor components.

[0019] In one configuration, the multitude of semiconductor components includes at least one semiconductor component whose semiconductor material system differs from that of any other semiconductor component within the multitude. The use of different material systems allows for the creation of semiconductor components with different sensitive spectral ranges. Several semiconductor components with different material systems can be arranged on the same component body. Advantageously, the different material systems include at least one from the group consisting of silicon, germanium, III-V compounds, and II-IV compounds. The individual microphotodiodes can be implemented using a corresponding technology, for example, silicon, germanium, III-V, or II-IV technology. By using and assembling different material systems, the wavelength range typical for silicon can be significantly extended to approximately 1000 / 1100 nm.Similarly, significantly higher absorbance can be achieved at thinner layer thicknesses by using materials other than silicon.

[0020] Furthermore, an absorbing agent within a given wavelength range can be provided, which is arranged on the semiconductor component or the plurality of semiconductor components. Such an agent is, for example, a material layer on the radiation-incident side of the semiconductor component that absorbs radiation in a specific wavelength range, so that the semiconductor component no longer detects in this wavelength range. This allows the sensitive spectral range resulting from the material system used to be further narrowed.

[0021] By combining different microphotodiodes with varying absorption wavelengths, a broadband yet selective detector array can be realized on a hybrid chip, enabling broadband spectrometer applications. Furthermore, the use of microphotodiodes allows for high-precision assembly and high packing density.

[0022] The component body is designed to further process the detected radiation using the integrated circuit. It can, for example, include a transimpedance amplifier or an evaluation unit.

[0023] In one embodiment, the semiconductor component further comprises a diffuser or a refractive element arranged on the semiconductor component or the plurality of semiconductor components. The diffuser ensures homogeneous illumination of the underlying semiconductor components.

[0024] In one embodiment of the semiconductor device, the numerous semiconductor components are arranged in an array of cells. Each cell contains several semiconductor components. The composition of the different types of semiconductor components is the same for each cell.

[0025] In one embodiment of the semiconductor component, it further comprises at least one active zone for radiation generation, such that, for example, radiation-emitting and radiation-detecting semiconductor components are arranged on the same component body to combine them into a system, for example, consisting of RGB LEDs and sensors. The semiconductor body comprises one or more radiation-emitting semiconductor components, wherein each radiation-emitting component, or each component within the plurality of radiation-emitting semiconductors, has an active zone for radiation generation and a termination point, is arranged on the substrate, and is electrically connected to the component body. Alternatively, it is also conceivable to provide the active zone for radiation generation on the component body.

[0026] Overall, the semiconductor device described above, as a microphotodiode-based spectrometer, allows for a higher integration density at the component level, enables cost reduction, and a wider bandwidth of heterointegration as a spectrometer application compared to the integration of multiple components based solely on silicon or germanium. Compared to a conventional spectrometer array of silicon photodiodes with filters, such a semiconductor device achieves better suppression through targeted bandgap engineering. This results in improved angular reception characteristics and the ability to cover a broader wavelength range, for example, greater than 1000 nm.

[0027] The invention is illustrated below with reference to the drawing in the following figures. Fig. Figure 1 schematically shows an embodiment of a semiconductor component in sectional view. Fig. 2A and Fig. 2B illustrates the steps involved in microtransfer printing using intermediate products. Fig. Figure 3 schematically shows another embodiment of a semiconductor component in a top view. Fig. Figure 4 schematically shows another embodiment of a semiconductor component in sectional view. Fig. Figure 5 schematically shows another embodiment of a semiconductor component in sectional view. Fig. Figure 6A schematically shows another embodiment of a semiconductor component in sectional view. Fig. 6B and Fig. Figure 6C illustrates the filtering effect of an exemplary embodiment of a semiconductor component. The Fig. Figure 7 schematically shows an embodiment of a semiconductor component. Fig. Figure 8 illustrates the wavelength-dependent absorption behavior of the semiconductor component. Fig. Figure 9 schematically shows another embodiment of a semiconductor component in sectional view.

[0028] Fig. Figure 1 schematically shows an embodiment of a semiconductor component in sectional view.

[0029] The semiconductor component 1 comprises a component body 3 and a plurality of semiconductor components 5 arranged on the component body 3.

[0030] The component body 3 comprises a substrate 7 with an integrated circuit 9. In this embodiment, it is designed as an application-specific integrated circuit (ASIC) on a silicon substrate, abbreviated as Si-ASIC. Such a component body 3 can include a logic gate. It can serve as a transimpedance amplifier or evaluation unit, or provide functions of such assemblies. The integrated circuit is electrically connected to the semiconductor components 5.

[0031] Each of the multiple semiconductor components 5 has an active zone for receiving radiation, making it suitable as a photodetector. The semiconductor component 5 can be configured as a small photodiode, also known as a microphotodiode, or "µPD" for short.

[0032] The multitude of semiconductor components 5 comprises different types of semiconductor components 5; four are shown as examples in this embodiment. One embodiment of photodiodes are small, thin metal-semiconductor-metal photodiodes, abbreviated as "MSM". The photodetecting structures that can be used as semiconductor components are not limited to the embodiments described above. The types of semiconductor components 5 differ with respect to the wavelength range in which they detect radiation. In other words, the semiconductor components 5 differ with respect to their sensitive spectral ranges, so that the combination of different semiconductor components 5 makes it possible to construct a spectrometer as a semiconductor device whose measuring range results from the superposition of the sensitive spectral ranges.

[0033] In this embodiment, the semiconductor components 5 are printable microphotodiodes that have been applied to the first semiconductor body by means of microtransfer printing.

[0034] The fabrication of the semiconductor component 1 from a component body 3 and the semiconductor components 5 using this method is described below based on the Fig. 2A and Fig. 2B explained.

[0035] The fabrication of the component body 3 is carried out simultaneously for a plurality of component bodies 3 within the wafer assembly. This form of fabrication allows process steps for the production of the majority of component bodies 3 to be performed in parallel for all component bodies 3 simultaneously, as long as they are still interconnected. Such process steps include, in particular, the deposition or growth of layers and structures and, if necessary, their partial removal to form the integrated circuit 9. Only in a final step are the first semiconductor bodies 3 isolated and separated from one another.

[0036] During the manufacturing process, the semiconductor components 5 are placed onto the component bodies 3 and connected to each other in a parallel placement process while the latter are still assembled. This placement occurs simultaneously by transferring a plurality of semiconductor components 5 from a sacrificial wafer 52 to the target wafer 54, which still has the component bodies 3 connected, using an elastomeric punch. The components are then placed onto the target wafer 54 in such a way that they are positioned at their intended locations on the component bodies 3. The punch plate has a structure that corresponds to the size and positions of the semiconductor components 5 on the target wafer 54.

[0037] The fabrication of the semiconductor components 5 also takes place in parallel within the wafer stack. The corresponding wafer is referred to as the sacrificial wafer 52. However, the second semiconductor bodies 5 are not separated by cutting the wafer 52. Instead, the second semiconductor bodies 5 are fabricated simultaneously on a sacrificial layer in such a way that all subsequent semiconductor components 5 are interconnected via support structures 30. The sacrificial layer is then removed, so that the individual second semiconductor bodies 5 are only connected to each other and to the wafer substrate via the support structures 30. Freestanding bridges 32 connect the semiconductor components 5 to an anchor structure 34, which in turn is connected to the wafer substrate. The semiconductor components 5 fabricated in this way are arranged in a grid pattern within the stack.

[0038] The thickness of such manufactured chips as semiconductor components 5 can be significantly less than that of conventionally isolated chips and may be in the range of a few micrometers.

[0039] In parallel transfer, the punch is pressed onto the semiconductor components 5 to be transferred, causing them to adhere to the punch. As soon as the punch moves in the opposite direction, the semiconductor components 5 are separated from the holding structures 30 by the ridges 32 or their attachment to the second semiconductor body 2 breaking off. A break-off point 40 remains on the semiconductor component 5, which may be located on a ridge-shaped extension 38 that is part of the ridge 32 of the holding structure 30.

[0040] Fig. Figure 2A shows a schematic representation of the sacrificial wafer 52 with a plurality of second semiconductor bodies 5 and the holding structure 30. After removal of the sacrificial layer, the second semiconductor bodies 5 are freestanding and connected only via webs 32 to an anchor structure 34, which forms the connection between the holding structure 30 and the wafer substrate. Fig. Figure 2B shows a schematic representation of the target wafer 54 with a plurality of first semiconductor bodies 3 in a composite. Two second semiconductor bodies 5 are already mounted on each of the first semiconductor bodies 3; these second semiconductor bodies 5 were extracted from the sacrificial wafer 52 corresponding to their position on the target wafer 54 and transferred to the target wafer 54 by means of the punch.

[0041] In the case of the detached second semiconductor body 5, the detachment point 40 is located on a ridge-shaped extension 38, which is part of the original ridge 32. Alternatively, the detachment point 40 can also be located directly on an outer surface of the semiconductor component 5.

[0042] In the parallel placement process, a plurality of semiconductor components 5 are transferred simultaneously by being broken out of the sacrificial wafer 52 upon contact with the punch and placed onto the target wafer 54 after transfer. Further process steps can then be carried out at the wafer level.

[0043] Parallel transfer reduces costs compared to serial placement. The parallel placement process described above is also known as microtransfer printing.

[0044] The use of printable microphotodiodes as semiconductor components 5 allows for high packing density in wafer-level assembly.

[0045] Fig. Figure 3 schematically shows another embodiment of a semiconductor component in a top view.

[0046] The semiconductor component 1 has a multitude of semiconductor components 5 on a component body 3, such as in connection with Fig. 1 described, on.

[0047] The semiconductor components 5 are arranged in unit cells 55, which are arranged in an array with rows and columns. Each unit cell 55 comprises the same types of semiconductor components 5 in a predetermined arrangement relative to each other. In this embodiment, a unit cell 55 comprises four different types of semiconductor components 5, which are arranged in two columns and two rows as a detector or unit cell array.

[0048] The unit cells 55 are also arranged in an array. In Fig. Figure 3 shows four cells 55 arranged in two columns and two rows as an example. The unit cell array can replicate on the intelligent substrate 7 for better mixing.

[0049] The types of semiconductor components 5 in each unit cell 5 differ with respect to their reception characteristics. The superposition of the sensitive spectral ranges of the semiconductor components 5 in the cell 5 yields its measurement range.

[0050] The types of semiconductor components 5 can be formed from different material systems, for example silicon, germanium, indium phosphide, a III-V compound or a II-IV compound.

[0051] The combination of different material systems for the semiconductor components 5 within the same semiconductor device 1 allows for numerous degrees of freedom in setting the sensitive spectral ranges for the various semiconductor components 5. The sensitive spectral range can also be further influenced by bandgap engineering, so that only a narrow wavelength range is detected with a single semiconductor component 5. The combination of different narrow sensitive spectral ranges enables the construction of an efficient spectrometer semiconductor device with very good measurement accuracy.

[0052] An alternative or additional means of creating different sensitive spectral ranges is the at least partial use of color filters applied to at least some of the semiconductor components 5.

[0053] The array of unit cells 55 enables spatial resolution in detection, as each cell 5 is suitable for detecting the spectrum of the incident light within its area. Alternatively, by using multiple cells 55 instead of just a few large-area photodiodes for different wavelengths, better mixing of the incident light can be achieved, since averaging over several cells 55 avoids the detection of only local maxima or minima.

[0054] Fig. Figure 4 schematically shows another embodiment of a semiconductor component in sectional view. To avoid repetition, only the differences to the one in Fig. 1. This is described in the exemplary embodiment shown.

[0055] The semiconductor component 1 comprises a component body 3 and a plurality of semiconductor components 5. In this embodiment, eight different types of microphotodiodes are provided as semiconductor components 5, whose sensitive spectral ranges differ.

[0056] A diffuser optic 13 is provided on the semiconductor components 5, which enables a more homogeneous illumination of the different types of microphotodiodes as semiconductor components 5 and thus increases the detection accuracy.

[0057] It should be noted that the different types of semiconductor components 5 can also be arranged under the diffuser optics 13 in an array of unit cells 55, as described above.

[0058] Fig. Figure 5 schematically shows another embodiment of a semiconductor component 1 in sectional view. To avoid repetition, only the differences to the one in Fig. 1. This is described in the exemplary embodiment shown.

[0059] In this embodiment, the plurality of semiconductor components 5 comprises replicating detector cells 55 with semiconductor bodies 5 of two types. Imaging optics 16 are provided on the semiconductor components 5, acting as a lens and directing the incident light onto the semiconductor components 5. The spatial resolution provided by the plurality of cells enables the direction of the incident light to be detected. This arrangement uses different types of microphotodiodes (in contrast to LIDAR or ToF applications with identical microphotodiodes).

[0060] It should be noted that the different types of semiconductor components 5 under the optics 16 can also be arranged in an array of cells 55 with rows and columns, as previously described.

[0061] The Fig. 6A, Fig. 6B and Fig. Figure 6C illustrates the filtering effect of an embodiment of a semiconductor component 1 with various microphotodiodes as semiconductor components 5, as described in Fig. 1 is shown. However, in this embodiment, in Fig. Figure 6A shows six different types of semiconductor components 5 as examples. More or fewer types, as well as their arrangement in an array of cells, are conceivable. The filtering effect of the other previously described embodiments follows the same principle.

[0062] Fig. Figure 6B shows, by way of example, the sensitivity of the microphotodiodes as semiconductor components 55 times the wavelength. Each of the in Fig. The microphotodiodes shown in Figure 6A detect in a wavelength range that differs from that of the others, but the entire spectrum in which detection is desired is covered by combining the different microphotodiodes and superimposing their sensitive spectra. In this embodiment, the spectra do not overlap.

[0063] Fig. Figure 6C shows by way of example the sensitivity of the microphotodiodes over the wavelength in an embodiment which differs from the previous one in that the spectra overlap at least partially.

[0064] The Fig. Figure 7 shows an embodiment of a wavelength-selective photodiode printable by microtransfer printing as a semiconductor component 5, whose sensitive spectral range has been set by band gap engineering.

[0065] The semiconductor component 5 has a substrate 7 and a first contact 21 on its top side and a second contact 22 on its bottom side. These contacts 21 and 22 can be n- or p-type contacts. A detection area 8 with an active zone 11 is provided on the substrate's top side, where the incident light 100 is detected. A wavelength-selective layer 25 is deposited on the detection area 8. By combining two materials, bandgap engineering can be achieved, for example, as follows: The detection area 8 is suitable for detecting radiation below a certain wavelength, denoted by Y. An absorption layer 25 absorbs radiation below a certain wavelength, denoted by X, so that this radiation no longer reaches the active zone 11.As a result, in the active zone 11 only radiation in the wavelength range between Y and X is absorbed, since radiation above the range cannot be detected and radiation below the range does not reach the detection range 8.

[0066] Fig. Figure 8 illustrates the absorption behavior described above by showing absorption as a function of wavelength. Although the wavelength range 101 below wavelength Y is detectable in the detection range 8, only the difference range 103 between wavelengths X and Y is detected and absorbed due to the attenuation of the radiation in the wavelength range 102 up to wavelength X. By appropriately combining different materials, the sensitivity of a semiconductor component 5 and its sensitive spectral range can be specifically adjusted.

[0067] Different material combinations allow for different sensitivities, which can be combined to create a spectrometer.

[0068] Fig. Figure 9 schematically shows another embodiment of a semiconductor component in sectional view.

[0069] The semiconductor component 1 has a multitude of semiconductor components 5 on a component body 3, such as in connection with Fig. As described in section 1, only the differences to [reference 1] are listed. To avoid repetition, only the differences to [reference 2] are mentioned. Fig. 1 described.

[0070] In addition to the microphotodiodes 5, this embodiment also includes radiation-emitting semiconductor components 6 to form a sensor. Each radiation-emitting semiconductor component 6, which can be configured as an LED, for example, has an active zone for radiation generation and a termination point, is arranged on the substrate, and is electrically connected to the component body 3. The radiation-emitting semiconductor components 6 are also printable components that have been applied to the component body 3 using the microtransfer printing process described above. Reference symbol list 1 Semiconductor component 3 component bodies 5 Semiconductor components 7 Substrat 8 Detection range 9 integrated circuit 11 active zones 13 Diffuser optics 16 Optics 21, 22 Contact 25 Absorption layer 30 Support structure 32 Bridge 34 Anchor structure 38 continuation 40 Demolition site 52 Sacrificial substrate 54 Target substrate 55 cells 100 lights Areas 101, 102, 103 X, Y wavelength

Claims

[1] Method for manufacturing a semiconductor device (1) comprising Deposition of a semiconductor component (5) or a plurality of semiconductor components (5) by microtransfer printing onto a component body (3) with a substrate (7) and an integrated circuit (9), wherein the semiconductor component (5) or each of the plurality of semiconductor components (5) has an active zone (11) for radiation reception, wherein in a parallel placement process the semiconductor components (5) are simultaneously placed onto the component bodies (3) and connected to each other while the latter are still in the assembly, wherein a plurality of semiconductor components (5) are transferred from a sacrificial wafer (52) to a target wafer (54) with the still connected component bodies (3) by means of a punch and placed onto it, wherein During parallel transfer, the stamp is pressed onto the semiconductor components (5) to be transferred, so that they adhere to the stamp. as soon as the punch moves in the opposite direction, the semiconductor components (5) are separated from the holding structures (30) by the breaks off webs (32) or their projections on the semiconductor body (5), leaving a break point (40) directly on an outside of the semiconductor component (5), the procedure further includes Arranging a diffuser (13) or a refractive agent on the semiconductor component (5) or the plurality of semiconductor components (5). [2] Semiconductor component (1) manufactured according to a method according to claim 1, comprising - a component body (3) with a substrate (7) and an integrated circuit (9), - a semiconductor component(5) or a plurality of semiconductor components(5), wherein the semiconductor component(5) or each of the plurality of semiconductor components(5) has an active zone (11) for receiving radiation and a break point (40), is arranged on the component body (3) and is electrically connected to the integrated circuit (9). - a diffuser (13) or a refractive agent arranged on the semiconductor component (5) or the plurality of semiconductor components (5). [3] Semiconductor component (1) according to claim 2, wherein the semiconductor component (5) or the plurality of semiconductor components (5) have been applied to the component body (3) by means of microtransfer printing. [4] Semiconductor component (1) according to claim 2 or 3, wherein the plurality of semiconductor components (5) comprises at least one semiconductor component (5) whose sensitive spectral range differs from that of another semiconductor component (5) from the plurality of semiconductor components (5). [5] Semiconductor component (1) according to any one of the preceding claims 2 to 4, wherein the plurality of semiconductor components (5) comprises at least one semiconductor component (5) whose material system differs from that of another semiconductor component (5) from the plurality of semiconductor components (5). [6] Semiconductor component (1) according to claim 5, wherein the different material systems comprise at least one from the group consisting of silicon, germanium, III-V compounds and II-IV compounds. [7] Semiconductor component (1) according to any one of the preceding claims 2 to 6, wherein the substrate (7) of the component body (3) comprises silicon. [8] Semiconductor component (1) according to any one of the preceding claims 2 to 7, wherein the component body (3) comprises a transimpedance amplifier or an evaluation unit. [9] Semiconductor component (1) according to any one of the preceding claims 2 to 8, further comprising an absorbing means (25) in a given wavelength range, which is arranged on the semiconductor component (5) or the plurality of semiconductor components (55) or is applied to a detection area (8) of the semiconductor component (5) or to a detection area (8) of at least one of the plurality of semiconductor components (5). [10] Semiconductor component (1) according to any one of the preceding claims 2 to 9, wherein the plurality of semiconductor components (5) is arranged in an array of cells (55), and each cell (55) comprises several semiconductor components (5). [11] Semiconductor component (1) according to claim 10, wherein the semiconductor components (5) of a cell (55) differ with respect to their sensitive spectral ranges. [12] Semiconductor component (1) according to any one of the preceding claims 2 to 11, further comprising at least one active zone for radiation generation. [13] Semiconductor component (1) according to claim 12, further comprising a radiation-emitting further semiconductor component (6) or a plurality of radiation-emitting further semiconductor components (6), wherein the radiation-emitting further semiconductor component (6) or each of the plurality of radiation-emitting further semiconductor components (6) has an active zone for radiation generation and a termination point (40), is arranged on the component body (3) and is electrically conductively connected to the integrated circuit (9).

Images